Semiconductor device and method for manufacturing the semiconductor device

Abstract

Semiconductor device (100), comprising: - a substrate (14); - a resin housing (50) surrounding a region directly above the substrate (14) in a planar view; - a semiconductor chip (18) provided in the region; and - an electrode (70) having a first portion (71) drawn out from an upper surface (52) of the resin package (50) and a second portion (72) provided below the upper surface (52) of the resin package (50) and to be inserted into the resin package (50), and which is electrically connected to the semiconductor chip (18), where: - a first notch (74) is formed over the first section (71) to the second section (72) in the electrode (70), - a first groove (54) is formed to expose a portion formed in the second portion (72) in the first notch (74) on the upper surface (52) of the resin case (50), - the first portion (71) extends along the upper surface (52) of the resin housing (50) and - the first notch (74) is designed to extend a creepage distance between an adjacent conductive component (95) and the electrode (70).

Description

Background of the inventionArea

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. background

[0002] JP 2009-277959 A discloses a semiconductor device capable of preventing resin burrs from adhering to an external electrode. In the semiconductor device, an IGBT and an external electrode are electrically connected. A housing seals the IGBT such that a portion of the external electrode is exposed therefrom. The external electrode has a through-hole at the origin of its portion exposed from the housing. At least a portion of the through-hole is filled with a thermoplastic resin, forming the housing.

[0003] In a semiconductor device such as in JP 2009-277959 A, if the external electrode has a notch, resin enters the notch when a resin package is molded, so that resin flash may occur.

[0004] US 5,763,946 A relates to a semiconductor component with bent electrode terminals. A provided housing has an upper opening, a plurality of semiconductor elements, and electrode terminals connected to the semiconductor elements. A cover element closing the opening has insertion holes extending from the bottom to the top. The cover element is connected to the housing by inserting the electrode terminals through the insertion holes so that they protrude vertically from the top, and then bending them over. The cover element has projections next to the insertion holes. Each of the vertically protruding electrode terminals is bent by more than 90° over a corresponding projection, with its bent corner portion resting on the edge of the projection and arranged parallel to the top of the cover element due to a spring-back effect.

[0005] JP H11-345 669 A discloses a molded part that reliably prevents a base part from breaking when bending an electrical connecting conductor. The proposed molded part comprises an electrical connecting conductor or a busbar and is manufactured by pressing or press-fitting a portion of the electrical connecting conductor made of conductive metal into a synthetic resin base part. An insertion groove for a bending device is incorporated in the base part 22 to expose the electrical connecting conductor pressed into a side wall. Summary

[0006] The present invention has been made to solve the above-described problem, and aims to provide a semiconductor device capable of preventing resin flash and a method for manufacturing the same.

[0007] The features and advantages of the present invention can be summarized as follows.

[0008] The object underlying the invention is achieved in a semiconductor device according to the invention with the features of claim 1 and in a method for producing a semiconductor device according to the invention with the features of claim 9. Advantageous further developments are the subject of the respective dependent claims.

[0009] According to a first aspect of the present disclosure, a semiconductor device includes a substrate, a resin surrounding a region directly above the substrate in a planar view, a semiconductor chip provided in the region, and an electrode having a first portion protruded from an upper surface of the resin package and a second portion provided below the upper surface of the resin package and to be inserted into the resin package, and electrically connected to the semiconductor chip, a first notch formed over the first portion to the second portion in the electrode, and a first groove formed to expose a portion formed in the second portion in the first notch on the upper surface of the resin package. According to the invention, the first portion extends along the upper surface of the resin package.The first notch is configured to extend a creepage distance between an adjacent conductive component and the electrode.

[0010] According to one aspect of the present invention, a method for manufacturing a semiconductor device according to the present invention comprises inserting an electrode in which a notch is formed into a metal mold such that a part of the electrode is disposed in a space in the metal mold and that the notch is not disposed in the space, forming a resin case in which the electrode is inserted by pouring resin into the space while the electrode is inserted in the metal mold, arranging the resin case to surround a region directly above a substrate in a planar view, and arranging the semiconductor chip in the region.

[0011] Other and further objects, features and advantages of the invention will become more apparent from the following description. Short description of the characters Fig. 1 is a cross-sectional view of a semiconductor device according to a first embodiment. Fig. 2 is a perspective view illustrating respective structures of the electrode and the resin case according to the first embodiment. Fig. 3 is a perspective view illustrating the electrode and the resin case according to the first embodiment as seen from a different angle. Fig. 4 is a plan view illustrating the respective structures of the electrode and the resin case according to the first embodiment. Fig. 5 is a diagram illustrating a state in which a nut is attached to the resin case according to the first embodiment. Fig. 6 is a perspective view illustrating a state in which the electrode according to the first embodiment is folded. Fig. 7 is a perspective view illustrating the state in which the electrode according to the first embodiment is folded, as viewed from a different angle. Fig. 8 is a plan view illustrating a state in which the electrode according to the first embodiment is folded. Fig. 9 to 13 are diagrams each illustrating the method of manufacturing the semiconductor device according to the first embodiment. Fig. 14 is a perspective view illustrating respective structures of an electrode and a resin case according to a comparative example. Fig. 15 is a perspective view illustrating a state in which the electrode according to the comparative example is folded. Fig. 16 is a perspective view illustrating a state in which the resin flash is removed in a semiconductor device according to the comparative example. Fig. 17 is a perspective view illustrating a creepage distance between the electrode and a conductive component according to the comparative example. Fig. 18 is a plan view illustrating the creepage distance between the electrode and the conductive component according to the comparative example. Fig. 19 is a perspective view illustrating a creepage distance between the electrode and a conductive component according to the first embodiment. Fig. 20 is a plan view illustrating the creepage distance between the electrode and the conductive component according to the first embodiment. Fig. 21 is a diagram illustrating a width of the electrode according to the first embodiment. Fig. 22 is a plan view illustrating respective structures of an electrode and a resin package according to a second embodiment. Fig. 23 is a cross-sectional view illustrating the respective structures of the electrode and the resin case according to the second embodiment. Fig. 24 is a plan view illustrating respective structures of an electrode and a resin case according to a third embodiment. Fig. 25 is a cross-sectional view illustrating respective structures of an electrode and a resin case according to a fourth embodiment. Description of the embodiments

[0012] Semiconductor devices and methods for manufacturing the semiconductor devices according to embodiments of the present invention will be described with reference to the accompanying figures. Components that are identical to or correspond to each other are denoted by the same reference numerals, and repeated descriptions thereof are omitted in some cases. First embodiment.

[0013] Fig. 1 is a cross-sectional view of a semiconductor device 100 according to a first embodiment. The semiconductor device 100 includes a base plate 10 and an insulating substrate 14 bonded to an upper surface of the base plate 10 by a bonding material 12. The insulating substrate 14 includes a conductive layer 14a, an insulating layer 14b provided on the conductive layer 14a, and a circuit pattern 14c provided on the insulating layer 14b. A semiconductor chip 18 is bonded to the circuit pattern 14c by a bonding material 16.

[0014] The semiconductor device 100 includes a resin package 50 that surrounds a region directly above the base plate 10 or the insulating substrate 14 in a planar view. The semiconductor chip 18 is provided in the region directly above the base plate 10 or the insulating substrate 14. The region directly above the base plate 10 or the insulating substrate 14 is sealed by a sealing material 22. A lid 24 is provided on the sealing material 22.

[0015] Electrodes 70 and 80 are inserted into the resin package 50. The resin package 50 is also referred to as an insert package. The electrodes 70 and 80 are electrically connected to the semiconductor chip 18 or the circuit pattern 14c via a wire 20.

[0016] The electrode 70 has a first portion 71 and a second portion 72. The first portion 71 is a portion protruded from an upper surface 52 of the resin package 50. The second portion 72 is a portion provided below the upper surface 52 of the resin package 50 and to be inserted into the resin package 50. The second portion 72 extends downward. In the present embodiment, a lower end of the second portion 72 is connected to the semiconductor chip 18 via the wire 20.

[0017] Fig. 2 is a perspective view illustrating respective structures of the electrode 70 and the resin case 50 according to the first embodiment. Fig. 3 is a perspective view illustrating the electrode 70 and the resin case 50 according to the first embodiment as viewed from a different angle. Fig. 4 is a plan view illustrating the respective structures of the electrode 70 and the resin package 50 according to the first embodiment. The electrode 70 has, for example, a flat plate shape. A notch 74 is formed in the electrode 70 above the first portion 71 to the second portion 72. The notch 74 notches one side of the electrode 70.

[0018] A groove 54 is formed on the upper surface 52 of the resin case 50 to expose a portion formed in the second portion 72 in the notch 74. As shown in Fig. 4 as a hatched area, the groove 54 is formed to cover a portion where the notch 74 is formed in the electrode 70 in a planar view. A bottom portion of the groove 54 is provided below the notch 74. The groove 54 exposes an upper surface 72a of the second portion 72 forming the notch 74. That is, the groove 54 exposes the entire notch 74 from the resin package 50.

[0019] Fig. 5 is a diagram illustrating a state in which a nut 90 is attached to the resin case 50 according to the first embodiment. A recess for receiving the nut 90 is formed on the upper surface 52 of the resin case 50.

[0020] Fig. 6 is a perspective view illustrating a state in which the electrode 70 according to the first embodiment is folded. Fig. 7 is a perspective view illustrating the state in which the electrode 70 according to the first embodiment is folded as viewed from a different angle. Fig. 8 is a plan view illustrating the state in which the electrode 70 according to the first embodiment is folded. The first portion 71 extends along the upper surface 52 of the resin case 50, with the electrode 70 folded. At this time, a hole of the groove 90 and a through hole formed in the first portion 71 overlap each other. The electrode 70 has a bent portion 76 connecting the first portion 71 and the second portion 72.

[0021] Next, a method for manufacturing the semiconductor device 100 will be described. Fig. 9 and Fig. 13 are diagrams each illustrating the method of manufacturing the semiconductor device 100 according to the first embodiment. First, as shown in Fig. 9, a metal mold is prepared (step 1). The metal mold includes an upper metal mold 91 and a lower metal mold 92. The metal mold is a mold for molding resin, and is formed, for example, from a metal. The metal mold may be formed from a material other than a metal.

[0022] Then, as in Fig. 10, an electrode 70 is inserted into the metal mold (step 2). Then, as shown in Fig. 11, the metal mold is closed (step 3). As a result, a space 93 is formed, which is covered by the upper metal mold 91 and the lower metal mold 92. A part of the electrode 70 is arranged in the space 93 in the metal mold, and the notch 74 is not arranged in the space 93. The notch 74 is provided above the space 93. Subsequently, as shown in Fig. 12, a resin 51 is poured into the space 93 while the electrode 70 is inserted into the metal mold (step 4). As a result, as shown in Fig. 13, the resin case 50 is formed, into which the electrode 70 is inserted (step 5). Although the electrode 70 was described as an example, the electrode 80 may be inserted into the metal mold in step 2.

[0023] Subsequently, the resin package 50 is arranged so that it surrounds a region directly above the insulating substrate 14 in a planar view. The semiconductor chip 18 is arranged in the region directly above the insulating substrate 14. Subsequently, the connection is made via the wire 20, and the interior of the resin package 50 is sealed using the sealing material 22. The lid 24 is provided on the sealing material 22.

[0024] Fig. 14 is a perspective view illustrating respective structures of an electrode 70 and a resin case 150 according to a comparative example. Fig. 15 is a perspective view illustrating a state in which the electrode 70 according to the comparative example is folded. A groove 54 is not formed in the resin case 150 according to the comparative example. In such a configuration, a resin 51a may enter a notch 74 in the electrode 70 when the resin case 150 is molded. The resin 51a remains even after the electrode 70 is bent, so a resin burr is present. Accordingly, the resin burr must be removed. Fig. 16 is a perspective view illustrating a state in which a resin flash is removed in a semiconductor device according to the comparative example.

[0025] On the other hand, the groove 54 is formed on the upper surface 52 of the resin package 50 to expose the portion formed in the second portion 72 in the notch 74 in the electrode 70. This configuration allows the metal mold to be arranged around the notch 74 when the resin package 50 is molded and prevents resin from entering the notch 74. This can suppress resin flash. In the method for manufacturing the semiconductor device 100 according to the present embodiment, the notch 74 in the electrode 70 is not arranged in the space 93 in the metal mold into which the resin 51 is poured. Accordingly, the resin 51 can be prevented from entering the notch 74. Therefore, resin flash can be suppressed. As a result, the step of removing the resin flash can be omitted, and the manufacturing cost of the resin package 50 can be reduced.

[0026] In the present embodiment, the notch 74 in the electrode 70 is exposed from the resin package 50. Accordingly, it can be confirmed whether the electrode 70 is arranged in the correct position. The resin package 50 can be formed using a general method for manufacturing the insert package. Accordingly, new equipment investment for manufacturing the resin package 50 can be eliminated.

[0027] Fig. 17 is a perspective view illustrating a creepage distance d1 between the electrode 70 and a conductive component 95 according to the comparative example. Fig. 18 is a plan view illustrating the creepage distance d1 between the electrode 70 and the conductive component 95 according to the comparative example. The conductive component 95 is, for example, a product fixing screw for fixing a semiconductor device 100 to a product. The notch 74 in the electrode 70 is formed to ensure a suitable creepage distance d1 from an adjacent conductive component 95. That is, the notch 74 in the electrode 70 is formed to widen the creepage distance d1 between the adjacent conductive component 95 and the electrode 70.

[0028] Fig. 19 is a perspective view illustrating a creepage distance d2 between the electrode 70 and a conductive component 95 according to the first embodiment. Fig. Figure 20 is a plan view illustrating the creepage distance d2 between the electrode 70 and the conductive component 95 according to the first embodiment. In the present embodiment, the groove 54 is formed in the resin package 50. Accordingly, the creepage distance d2 between the electrode 70 and the conductive component 95 can be made larger than the creepage distance d1 in the comparative example.

[0029] Fig. Figure 21 is a diagram illustrating a width W1 of the electrode 70 according to the first embodiment. In the present embodiment, the creepage distance d2 between the electrode 70 and the conductive component 95 can be kept large as described above. Thus, the width W1 of the electrode 70 can be increased. Accordingly, the electrode 70 can easily dissipate heat, and heat generation by the electrode 70 during product use can be reduced.

[0030] The semiconductor device 100 according to the present embodiment can be used in all situations such as power generation, power transmission, and efficient use or reproduction of energy. The semiconductor chip 18 can be, for example, an IGBT (Insulated Gate Bipolar Transistor) or a diode. The number of semiconductor chips 18 included in the semiconductor device 100 is not limited. A structure of the semiconductor device 100 is not limited to that shown in Fig. 1. For example, the semiconductor chip 18 and the electrodes 70 and 80 may be directly connected to each other without the wire 20.

[0031] The semiconductor chip 18 is formed, for example, from silicon or a wide-bandgap semiconductor. Examples of a wide-bandgap semiconductor include silicon carbide, a gallium nitride-based material, or diamond. When the semiconductor chip 18 is formed from a wide-bandgap semiconductor, a high current density is assumed. In the present embodiment, the width of the electrode 70 is increased, thereby reducing heat generation even when the current density of the semiconductor chip 18 is high.

[0032] These modifications can be suitably applied to semiconductor devices and methods for manufacturing the semiconductor devices according to the following embodiments. Meanwhile, for the semiconductor devices and methods for manufacturing the semiconductor devices according to the following embodiments, differences from the first embodiment will be mainly explained, since they have numerous similarities with the first embodiment. Second embodiment.

[0033] Fig. 22 is a plan view illustrating respective structures of an electrode 70 and a resin case 250 according to a second embodiment. Fig. 23 is a cross-sectional view illustrating respective structures of the electrode 70 and the resin case 250 according to the second embodiment. In the present embodiment, a structure of a groove formed on an upper surface 52 of the resin case 250 differs from that in the first embodiment. Other structures are similar to those in the first embodiment.

[0034] A groove 256 is further formed in addition to a groove 54 on the upper surface 52 of the resin case 250. The groove 256 exposes a portion on the opposite side of a portion in which a notch 74 is formed in the electrode 70 in a width direction of the electrode 70. The groove 256 exposes a portion on the side of another adjacent electrode 70 in the electrode 70. That is, the grooves 54 and 256 are respectively formed to form both sides of the electrode 70 on the upper surface 52 of the resin case 250.

[0035] As in Fig. As illustrated in FIG. 23, a creepage distance d4 between the adjacent electrodes 70 in a case where the grooves 256 exist is longer than a creepage distance d3 between the adjacent electrodes 70 in a case where the grooves 256 do not exist. Accordingly, the width W1 of the electrode 70 can be further increased, and heat generation by the electrode 70 at the time of product use can be reduced. Third embodiment.

[0036] Fig. 24 is a plan view illustrating respective structures of an electrode 70 and a resin case 50 according to a third embodiment. In the present embodiment, in a width direction of the electrode 70, a length W3 of a portion covered with the resin case 50 in a bending portion 76 corresponds to half or more of a width W2 of the bending portion 76. As a result, when manufacturing the resin case 50, bending processing of the electrode 70 can be simplified. Stress acting on the resin case 50 when the electrode 70 is bent can be suppressed. Fourth embodiment.

[0037] Fig.25 is a cross-sectional view illustrating respective structures of an electrode 470 and a resin case 50 according to a fourth embodiment. In the present embodiment, the structure of the electrode 470 differs from that in the first embodiment. Other structures are similar to those in the first embodiment. A notch 478 is further formed within the bent portion 76 in the electrode, in addition to a notch 74. The notch 478 is also called a embossing. If the notch 478 is previously formed in the electrode 470, bending processing of the electrode 470 can be easily performed. When the electrode 470 is bent, stress acting on the resin case 50 can be suppressed.

[0038] Meanwhile, technical features explained in each embodiment can be appropriately combined for use.

[0039] In the semiconductor device according to the present invention, the first groove is formed on the upper surface of the resin package to expose the portion formed in the second portion in the first notch in the electrode. This configuration makes it possible to arrange a metal mold around the first notch when forming the resin package and prevent resin from entering the first notch. Resin flash can thereby be prevented.

[0040] In the methods for manufacturing the semiconductor device according to the present invention, the electrode groove is not located in the space in the metal mold into which the resin is poured. Accordingly, the resin can be prevented from entering the groove. This can prevent resin flash.

Claims

[1] A semiconductor device (100) comprising: - a substrate (14); - a resin housing (50) surrounding a region directly above the substrate (14) in a planar view; - a semiconductor chip (18) provided in the region; and - an electrode (70) having a first portion (71) drawn out from an upper surface (52) of the resin package (50) and a second portion (72) provided below the upper surface (52) of the resin package (50) and to be inserted into the resin package (50), and which is electrically connected to the semiconductor chip (18), where: - a first notch (74) is formed over the first section (71) to the second section (72) in the electrode (70), - a first groove (54) is formed to expose a portion formed in the second portion (72) in the first notch (74) on the upper surface (52) of the resin case (50), - the first portion (71) extends along the upper surface (52) of the resin housing (50) and - the first notch (74) is designed to extend a creepage distance between an adjacent conductive component (95) and the electrode (70). [2] The semiconductor device (100) according to claim 1, wherein the first groove (54) exposes a top surface (72a) of the second portion (72) forming the first notch (74). [3] The semiconductor device (100) according to any one of the preceding claims, wherein a second groove (256) exposing a portion on the opposite side of a portion where the first notch (74) is formed in a width direction of the electrode (70) is formed in the electrode (70) on the upper surface (52) of the resin package (250). [4] The semiconductor device (100) according to any one of claims 1 and 2, wherein a groove (256) is formed to expose a portion on the side of another adjacent electrode (70) in the electrode (70) on the upper surface (52) of the resin package (250). [5] A semiconductor device (100) according to any one of claims 1 to 5, wherein: - the first portion (71) extends along the upper surface (52) of the resin housing (50), - the second portion (72) is inserted into the resin housing (50) in such a way that it extends downwards, - the electrode (70) has a bending section (76) which connects the first section (71) and the second section (72) to one another, and - a length of a portion covered by the resin case (50) in the bending portion (76) corresponds to half or more of a length of the bending portion (76) in the width direction of the electrode (70). [6] A semiconductor device (100) according to any one of the preceding claims, wherein: - the first portion (71) extends along the upper surface (52) of the resin housing (50), - the second portion (72) is inserted into the resin housing (50) in such a way that it extends downwards, - the electrode (470) has a bending section (76) which connects the first section (71) and the second section (72) to one another, and - a second notch (478) is formed within the bending section (76) in the electrode (470). [7] A semiconductor device (100) according to any one of the preceding claims 1 to 7, wherein the semiconductor chip (18) is formed by a wide bandgap semiconductor. [8] The semiconductor device (100) of claim 7, wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material, or diamond. [9] A method of manufacturing a semiconductor device (100), wherein: - the semiconductor device (100) is designed according to one of the preceding claims and - the procedure has: - inserting an electrode (70) in which a notch (74) is formed into a metal mold (91, 92) such that a part of the electrode (70) is arranged in a space (93) in the metal mold (91, 92) and the notch (74) is not arranged in the space (93); - forming a resin case (50) into which the electrode (70) is inserted by filling resin (51) into the space (93) while the electrode (70) is inserted into the metal mold (91, 92); - arranging the resin housing (50) to surround a region directly above a substrate (14) in a planar view; and - Arranging a semiconductor chip (18) in the region.

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