POWER SEMICONDUCTOR MODULE, SYSTEM COMPRISING A POWER SEMICONDUCTOR MODULE AND A COOLER, AND METHOD FOR MANUFACTURING A SYSTEM

Abstract

Power semiconductor module (100) comprising: a carrier (110) having a first side (111) and an opposite second side (112), a power semiconductor chip (120) arranged on the first side (111) of the carrier (110), and a housing (130) arranged at least partially on the second side (112) of the carrier (110) and forming a connection point for a cooler on the second side (112), the connection point completely surrounding an inner portion (112') of the second side (112) of the carrier (110), the inner portion (112') being configured to be in direct contact with a cooling fluid within the cooler, wherein the carrier (110) has a base plate (110_1) designed as a cover for a fluid channel, and a power electronics substrate (110_2) having two conductive layers separated by an insulating layer, wherein the power electronics substrate (110_2) is arranged between the power semiconductor chip (120) and the base plate (110_1).

Description

TECHNICAL FIELD

[0001] This disclosure generally relates to a power semiconductor module, to a system comprising a power semiconductor module and a cooler, and to a method of manufacturing such a system. BACKGROUND

[0002] Power semiconductor modules can generate a significant amount of heat during operation, so it may be necessary to provide special cooling means to dissipate this heat. A particularly efficient heat dissipation scheme is so-called "direct liquid cooling," in which a part of the power semiconductor module, such as a base plate, is in direct contact with a cooling liquid. Direct liquid cooling eliminates the need for a layer of thermal paste between the power semiconductor module and the cooler. Such a layer would increase the thermal resistance of the heat dissipation path. Sealing elements such as sealing rings can be used to create a watertight seal between the power semiconductor module and the cooler. However, such sealing elements can wear out over the lifetime of the power semiconductor module, which can lead to critical seal failure.Furthermore, the use of such sealing elements in a power semiconductor module can be comparatively expensive. Improved power semiconductor modules, improved systems comprising a power semiconductor module and a cooler, and improved methods for manufacturing such systems can contribute to solving these and other problems. DE 10 2012 216 086 A1 discloses a semiconductor module with a substrate on which a semiconductor chip is arranged and a housing having a connection point for a cooler. Further semiconductor modules are disclosed in US 2015 / 0 255 367 A1.

[0003] The problem underlying the invention is solved by the features of the independent claims. Further advantageous examples are described in the dependent claims. SUMMARY

[0004] Various aspects relate to a power semiconductor module, comprising: a carrier having a first side and an opposite second side, a power semiconductor chip arranged on the first side of the carrier, and a housing at least partially arranged on the second side of the carrier and forming a connection point for a cooler on the second side, wherein the connection point completely surrounds an inner portion of the second side of the carrier, wherein the inner portion is configured to be in direct contact with a cooling fluid within the cooler.

[0005] Various aspects relate to a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip arranged on the first side of the carrier, wherein a connection point for a cooler on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes, wherein the connection point completely surrounds an inner portion of the second side of the carrier, wherein the inner portion is configured to be in direct contact with a cooling fluid within the cooler.

[0006] Various aspects relate to a system comprising: a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip disposed on the first side of the carrier; and a cooler disposed on the second side of the carrier such that the carrier and the cooler form a fluid channel, wherein the power semiconductor module and the cooler are connected by a thermoplastic compound.

[0007] Various aspects relate to a method of manufacturing a system, the method comprising: providing a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip disposed on the first side of the carrier; disposing a cooler on the second side of the carrier such that the carrier and the cooler form a fluid channel; and connecting the power semiconductor module and the cooler with a thermoplastic compound. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The accompanying drawings illustrate examples and, together with the description, serve to explain the principles of the disclosure. Other examples and many of the intended advantages of the disclosure will be readily appreciated in light of the following detailed description. The elements in the drawings are not necessarily to scale. Identical reference numerals designate corresponding, similar parts. The Fig. 1A and Fig. 1B show a sectional view ( Fig. 1A) and a top view ( Fig. 1B) of an exemplary power semiconductor module having a housing, wherein the housing provides a connection point for a cooler. Fig. 2 shows a cross-sectional view of an exemplary system including a power semiconductor module and a cooler connected to the power semiconductor module via a thermoplastic compound. Fig. 3 shows a sectional view of another exemplary power semiconductor module, wherein a carrier of the module has a connection point having a roughened surface texture and / or a plurality of micro-holes. Fig. 4 shows a cross-sectional view of another exemplary system including a power semiconductor module and a cooler. Fig. 5 shows a cross-sectional view of another exemplary system having a plastic interface for connecting a power semiconductor module and a cooler. Fig. 6 shows a sectional view of another exemplary system, wherein the cooler has turbulence-generating structures. Fig. 7 is a flowchart of an exemplary method for manufacturing a system including a power semiconductor module and a cooler. DETAILED DESCRIPTION

[0009] In the following detailed description, directional terms such as "top," "bottom," "left," "right," "upper," "lower," etc., are used with reference to the orientation of the described figure(s). Since the components of the disclosure can be positioned in a variety of different orientations, the directional terminology is used for illustrative purposes only.

[0010] Furthermore, while a particular feature or aspect of an example may be disclosed with respect to only one of several embodiments, such feature or aspect may be combined with one or more other features or aspects of the other embodiments as desired and advantageous for a given or particular application, unless expressly stated or technically limited otherwise. To the extent that the terms "comprising," "having," "with," or other variations thereof are used in the detailed description or claims, these terms are to be construed as inclusive in a manner similar to the term "comprising." The terms "coupled," "connected," and their derivatives may be used.It should be understood that these terms may be used to indicate that two elements cooperate or interact with each other, whether or not they are in direct physical or electrical contact; intermediate elements or layers may be provided between the "coupled," "attached," or "connected" elements. The term "exemplary" is also intended merely as an example and not as the best or optimum.

[0011] An efficient power semiconductor module, an efficient system comprising a power semiconductor module and a cooler, and an efficient method for manufacturing such a system can, for example, reduce material consumption and / or ohmic losses and / or chemical waste, thus enabling energy and / or resource savings. Improved power semiconductor modules, improved systems, and improved methods for manufacturing a system, as specified in this description, can thus at least indirectly contribute to green technology solutions, i.e., climate-friendly solutions that enable a reduction in energy and / or resource consumption.

[0012] The Fig. 1A and Fig. 1B shows an exemplary power semiconductor module 100 having a carrier 110, a power semiconductor chip 120, and a housing 130. Fig. 1A shows a sectional view of the power semiconductor module 100 and Fig. 1B shows a plan view of a second side 112 of the carrier 110 of the power semiconductor module 100.

[0013] The carrier 110 has a first side 111 and a second side 112, with the second side 112 opposite the first side 111. The carrier 110 may also have lateral sides 113 connecting the first and second sides 111, 112.

[0014] According to one example, the carrier 110 comprises a single part, e.g., a power electronics substrate or a base plate. Such a power electronics substrate may have two conductive layers separated by an insulating layer. Such a power electronics substrate may, for example, be a substrate of the DCB (direct copper bonded), DAB (direct aluminum bonded), AMB (active metal brazed), etc. type. A base plate may, for example, be or comprise a metal sheet. A base plate may, for example, comprise or consist of Cu, Al, or AlSiC. The base plate may, for example, have a nickel plating.

[0015] According to another example, the carrier 110 is a composite of at least two parts, e.g., a composite of a power electronics substrate and a cover part for a fluid channel. The cover part can be or comprise a base plate, for example. The power semiconductor chip 120 can be arranged on the power electronics substrate, and the power electronics substrate can, in turn, be arranged on the cover part. The power electronics substrate can, for example, be soldered or glued to the cover part.

[0016] The power semiconductor chip 120 is arranged on the first side 111 of the carrier 110. The power semiconductor chip 120 can be soldered or glued to the carrier 110, for example. The power semiconductor chip 120 can have a first electrode arranged on the underside of the power semiconductor chip 120, wherein the underside faces the carrier 110. The electrode on the underside can be electrically coupled to at least a part of the carrier 110, for example, to a power electronics substrate of the carrier 110. The power semiconductor chip 120 can have a second electrode arranged on the top side of the power semiconductor chip 120, wherein the top side faces away from the carrier 110.

[0017] The power semiconductor chip 120 can be configured to operate with a high electrical current, e.g., a current of 1A or more, and / or a high voltage, e.g., a voltage of 1kV or more. The power semiconductor chip 120 can be, for example, a MOSFET or an IGBT.

[0018] According to one example, the power semiconductor module 100 comprises one or more further power semiconductor chips 120, which may also be arranged on the first side 111 of the carrier 110. The power semiconductor chips 120 may be coupled to each other to provide any suitable electrical circuit, e.g., a converter circuit, an inverter circuit, a half-bridge circuit, etc.

[0019] The housing 130 is arranged at least partially on the second side 112 of the carrier 110. Furthermore, the housing 130 forms a connection point for a cooler on the second side 112. In other words, the power semiconductor module 100 can be connected to a cooler at the connection point provided by the housing 130.

[0020] In particular, the housing may have a bottom side 131 facing away from the second side 112 of the carrier 110. The bottom side 131 may be configured as a connection point for the cooler. This means that the power semiconductor module 100 may be connected to a cooler such that the bottom side 131 of the housing 130 is in direct contact with the cooler.

[0021] The housing 130 can comprise any suitable material or material composition. The housing can comprise, for example, a molding material, a casting material, a polymer, a plastic, a dispensed material, etc. The housing 130 can be configured such that it is heated when the power semiconductor module 100 is connected to a cooler. By heating the housing 130, the material of the housing 130 can be at least partially melted. A cooler can be pressed onto or into the molten material. After the molten material has hardened, a tight connection in the form of a thermoplastic bond is created between the power semiconductor module 100 and the cooler. The connection can, in particular, seal a liquid channel of the cooler. The heating of the housing material 130 can comprise pressing a heated cooler onto the housing 130 (the cooler can, for example,in an oven, over a Bunsen burner, a hot plate, etc.). This process for producing a thermoplastic bond between the housing 130 and the cooler may be referred to as the "heat staking process."

[0022] As in Fig. 1B, the joint (or housing 130) completely surrounds an inner portion 112' of the second side 112 of the carrier 110. The inner portion 112' is configured to be in direct contact with a cooling fluid within a cooler when the power semiconductor module 100 is connected to a cooler. In particular, the carrier 110 may be configured to be arranged over an opening of the cooler such that, when the opening is closed by the carrier 110 and the housing 130, a fluid channel is provided. A cooling fluid within the fluid channel may come into direct contact with the second side 112 of the carrier 110 (in particular, with the inner portion 112' of the second side 112).

[0023] In the Fig. 1A and Fig. 1B, the housing 130 is arranged exclusively on the second side 112 of the carrier 110. However, it is also possible for the housing to additionally at least partially cover one or more of the lateral sides 113 of the carrier 110. Additionally or alternatively, it is possible for the housing to at least partially cover the first side 111 of the carrier 110. The housing 130 can, for example, cover the power semiconductor chip 120, or the housing can provide a frame on the first side 111, wherein the power semiconductor chip 120 is arranged within an internal volume surrounded by the frame. In the latter case, the internal volume can be at least partially filled with an encapsulation (e.g., a polymer, a gel, a molding compound, etc.) that covers the power semiconductor chip 120.

[0024] The housing 130 or the portion of the housing 130 on the second side 112 of the carrier 110 may have any suitable dimensions. For example, the housing 130 may have a height h (see Fig. 1A) in the range of approximately 1 mm to approximately 20 mm. The lower limit of this range may also be approximately 3 mm, approximately 5 mm, approximately 8 mm, or approximately 10 mm, and the upper limit may also be approximately 18 mm, approximately 15 mm, or approximately 12 mm. The housing 130 may, for example, have a thickness t (cf. Fig. 1B) in the range of about 1 mm to about 20 mm. The lower limit of this range may also be about 3 mm, about 5 mm, about 8 mm, or about 10 mm, and the upper limit may also be about 18 mm, about 15 mm, or about 12 mm.

[0025] According to one example, the inner portion 112' of the second side 112 of the carrier 110 includes a plurality of cooling structures (in Fig. 1A and Fig. 1B). The cooling structures may be configured to increase the surface area of ​​the inner portion 112' and may include, for example, pins, ribbons, etc. The cooling structures may be an integral part of the carrier 110, or the cooling structures may be coupled to the carrier 110.

[0026] Fig. 2 shows a system 200 including a power semiconductor module 210 and a cooler 220. The power semiconductor module 210 may, for example, be similar or identical to the power semiconductor module 100.

[0027] As in Fig. 2, the cooler 220 is connected to the power semiconductor module 210 at the connection point provided by the housing 130. As mentioned above, at least a portion of the housing 130 is melted to create a thermoplastic connection between the cooler 220 and the power semiconductor module 210. This may mean, in particular, that no additional fastening elements such as screws, rivets, or clamps are required to attach the cooler 220 to the power semiconductor module 210. This may also mean that the system 200 may have a burr or a similar change in the housing 130 if the material of the housing 130 has been melted. Furthermore, it may be unnecessary to provide a sealing ring that seals the interface between the power semiconductor module 210 and the cooler 220, since the interface is formed by the hardened material of the housing 130 (i.e.the thermoplastic compound produced by a heat staking process) is sealed.

[0028] According to one example, the power semiconductor module 210 comprises a composite carrier 110 comprising a base plate 110_1 and one or more power electronics substrates 110_2 arranged on the base plate 110_1. The base plate 110_1 and the power electronics substrate 110_2 may have the same or different dimensions (the latter case is shown in Fig. 2). The housing 130 can be arranged exclusively on the base plate 110_1 (in particular on the underside of the base plate 110_1) or the housing 130 can be arranged both on the base plate 110_1 and on the power electronics substrate 110_2 (the latter case is shown in Fig. 2).

[0029] In the Fig. 2, the system 200 has more than one power semiconductor chip 120. The power semiconductor chips 120 can, for example, be arranged laterally next to one another on the carrier 110. All power semiconductor chips 120 can, for example, be arranged on the same power electronics substrate 110_2, or the system 200 can have more than one power electronics substrate 110_2, wherein individual power semiconductor chips 120 are arranged on different ones of the power electronics substrates 110_2. The more than one power electronics substrate 110_2 can be arranged laterally next to one another on a single base plate 110_1. However, it is also possible for the system 200 to have more than one base plate 110_1, wherein the base plates 110_1 can be arranged over different openings of the cooler 220.

[0030] According to one example, the carrier 110 (or the base plate 110_1) has a plurality of cooling structures 114 extending into the fluid channel. The cooling structures 114 may be contiguous parts of the carrier 110, or the cooling structures 114 may be connected to the carrier 110, e.g., by plugging, screwing, gluing, or soldering.

[0031] The Fig. The exemplary power semiconductor module 210 illustrated in FIG. 2 includes an encapsulation 211 that encapsulates the power semiconductor chips 120. The encapsulation 211 may differ from the housing 130, e.g., because the encapsulation 211 comprises a different material or material composition and / or because the encapsulation 211 is manufactured in a different manufacturing step than the housing 130. However, it is also possible for the housing 130 and the encapsulation 211 to be an integral part manufactured in the same manufacturing step.

[0032] The cooler 220 may, for example, comprise or consist of a metal or a metal alloy. According to one example, the cooler 220 comprises or consists of Al. The cooler 220 may be made of one piece or assembled from multiple parts. The cooler 220 may, for example, have a first inlet / outlet 221 and a second inlet / outlet 221, which may, for example, be arranged on opposite lateral sides of the cooler 220. The cooler 220 may be configured to operate with any suitable cooling liquid, e.g., water.

[0033] According to one example, an upper surface 222 of the cooler 220, wherein the upper surface 222 is configured to be connected to the power semiconductor module 210 at the connection point provided by the housing 130, may have a roughened surface texture and / or a plurality of micro-holes and / or a rib and / or a groove to improve the adhesion between the housing 130 and the cooler 220.

[0034] Fig. 3 shows a power semiconductor module 300 comprising a carrier 110 and a power semiconductor chip 120 arranged on the carrier 110. The power semiconductor module 300 may be similar to the power semiconductor module 100, except for the differences described below. The power semiconductor module 300 may include further Fig. 3 may have parts not shown, e.g. an encapsulation that encapsulates the power semiconductor chip 120.

[0035] The power semiconductor module 300 does not necessarily have the connection point provided by the housing 130, as does the power semiconductor module 100. Instead, or in addition, the carrier 110 of the power semiconductor module 300 itself has a connection point 115 for a cooler. While the connection point of the power semiconductor module 100 can be formed by a plastic part, a polymer part, or a molded part, the connection point 115 of the power semiconductor module 300 can be formed by a metal part.

[0036] The connection point 115 is arranged on the second side 112 of the carrier 110. The connection point 115 has a roughened surface texture and / or a plurality of micro-holes and / or a ridge and / or a groove. In particular, the connection point 115 can have a greater surface roughness than the inner portion 112' of the second side 112 of the carrier 110. The surface roughness can be defined, for example, by the surface roughness parameter Ra. The surface roughness parameter Ra of the connection point 115 can, for example, be two, three, four, five, ten, or even more times greater than the surface roughness parameter Ra of the inner portion 112' of the second side 112.

[0037] According to one example, the roughened surface texture and / or the micro-holes and / or the ridge and / or the groove of the connection point 115 are structures produced by means of a laser and / or an etching process and / or a stamping process and / or mechanical processing such as polishing or grinding. The micro-holes may extend only partially through the carrier 110, or the micro-holes may extend completely through the carrier 110. The micro-holes may, for example, have a diameter of 700 µm or less, or 100 µm or less, or 50 µm or less, or 20 µm or less, or 10 µm or less, or 5 µm or less.

[0038] The connection point 115 completely surrounds the inner portion 112' of the second side 112 of the carrier 110 (similar to how the housing 130 completely surrounds the inner portion 112', as in Fig. 1B). The inner portion 112' is configured to be in direct contact with a cooling fluid within a cooler when the power semiconductor module 300 is connected to the cooler.

[0039] The connection point 115 can be configured to be brought into contact with a polymer or plastic part of a cooler, and the connection point 115 can be configured to be heated, which in turn melts the polymer or plastic part of the cooler. After the molten material has hardened, the cooler is firmly connected to the carrier 110 at the connection point 115 by a thermoplastic bond. However, in contrast to the power semiconductor module 100, the material of the cooler, and not the material of a housing of the power semiconductor module 300, is used to create the thermoplastic bond.

[0040] According to one example, the carrier 110 has an adhesion-promoting layer at least at the connection point 115, wherein the adhesion-promoting layer has a different reflection factor than the rest of the second side 112. The adhesion-promoting layer can, for example, comprise or consist of a coating, e.g. an inorganic coating, which covers the second side 112 or at least the connection point 115. The connection point 115 can be designed for heating by means of a laser, and the adhesion-promoting layer can be designed such that it reduces the reflection of the laser light at the connection point 115. In this way, the heating efficiency of the laser can be improved. Additionally or alternatively, the adhesion-promoting layer can comprise or consist of a thin metal mesh that is attached to the second side 112 at least at the connection point 115.Such a mesh can improve the adhesion between the carrier 110 and the cooler provided by the thermoplastic compound.

[0041] According to one example, the connection point 115 has a thickness t (cf. Fig. 3) in the range of approximately 1 mm to approximately 20 mm. The lower limit of this range may also be approximately 3 mm, approximately 5 mm, approximately 8 mm, or approximately 10 mm, and the upper limit may also be approximately 18 mm, approximately 15 mm, or approximately 12 mm.

[0042] The power semiconductor module 300 may, for example, have an encapsulation that encapsulates the power semiconductor chip 120 (in Fig. 3 not shown). The encapsulation may comprise, for example, a molded part, a plastic part, a polymer, etc. The encapsulation may be arranged on the first side 111 of the carrier 110.

[0043] Fig. 4 shows a system 400 including a power semiconductor module 410 and a cooler 420 connected to the power semiconductor module 410 at connection point 115. The power semiconductor module 410 may be similar or identical to the power semiconductor module 300. The cooler 420 may be similar or identical to the cooler 220, except for the differences described below.

[0044] The cooler 420 may comprise or consist of a plastic, a polymer, a molding material, a casting material, etc. (i.e., a material capable of forming a thermoplastic bond with the joint 115). According to one example, the entire cooler 420, or nearly the entire cooler 420, comprises or consists of one or more of these materials. According to another example, at least the portion of the cooler 420 that is in direct contact with the joint 115 comprises or consists of one or more of these materials, and another portion of the cooler 420, or the remainder of the cooler 420, comprises a different material, e.g., a metal or a metal alloy, in particular Al.

[0045] The power semiconductor module 410 and the cooler 420 are connected at the junction 115 by a thermoplastic compound made of the material of the cooler 420. The cooler 420 may have a burr or similar change near the junction where the cooler material was melted to form the thermoplastic compound.

[0046] Because the power semiconductor module 410 and the cooler 420 are connected via the thermoplastic bond, the system 400 can be free of additional fastening elements such as screws, rivets, or clamps that attach the power semiconductor module 410 to the cooler 420. Furthermore, the system 400 can dispense with a sealing ring arranged at the interface between the power semiconductor module 410 and the cooler 420, since the thermoplastic bond already ensures a watertight seal at this interface.

[0047] Fig. 5 shows another system 500 comprising a power semiconductor module 510 and a cooler 520 connected to the power semiconductor module 510 via a plastic interface 530. The power semiconductor module 510 may be similar or identical to the power semiconductor module 300 or 410. The cooler 520 may be similar or identical to the cooler 220. The cooler 520 may, in particular, be a metal cooler.

[0048] In the Fig. In the system 200 shown in Figure 2, the housing 130 is used to couple the cooler 220 to the power semiconductor module 210, wherein the housing 130 can be, for example, a molded body. In the system 500, instead, the plastic interface 530 (e.g., a plastic frame or plastic ring, or generally a plastic part) is coupled to the power semiconductor module 510 and the cooler 520. For this purpose, a first thermoplastic bond couples the plastic interface 530 to the power semiconductor module 510, and a second thermoplastic bond couples the plastic interface 530 to the cooler 520. The first thermoplastic bond can be produced, for example, by heating the power semiconductor module 510 (in particular, the connection point 115). The second thermoplastic bond can be produced, for example, by heating the cooler 520 (in particular, a connection point 115').Both the first and second thermoplastic joints are formed from the material of the plastic interface 530. The first and second thermoplastic joints can each be formed by a heat staking process.

[0049] Fig. 6 shows another system 600 including a power semiconductor module 610 and a cooler 620. System 600 may, for example, be similar or identical to system 400, except for the differences described below.

[0050] In the system 600, the carrier 110 does not necessarily have to have the cooling structures 114. Alternatively or additionally, the cooler 620 may have a plurality of turbulence-generating structures 621. These turbulence-generating structures 621 may, for example, be protrusions that extend from the bottom of the fluid channel toward the power semiconductor module 610. The turbulence-generating structures 621 may, but do not have to, be in direct contact with the carrier 110. As with the other power semiconductor modules described here, the power semiconductor module 610 may have a bottom plate (this example is shown in Fig. 6) or the power semiconductor module 610 may be free of a base plate (meaning that the cooler is coupled to a power electronics substrate).

[0051] Fig.7 is a flowchart of a method 700 for manufacturing a system. Method 700 may be used, for example, to manufacture system 200 or system 400.

[0052] The method 700 comprises, at 701, a process of providing a power semiconductor module having a carrier, the carrier having a first side and an opposite second side, and providing a power semiconductor chip arranged on the first side of the carrier. This may comprise attaching the power semiconductor chip to the first side, establishing electrical connections, and / or encapsulating the power semiconductor chip. The method 700 comprises, at 702, a process of arranging a cooler on the second side of the carrier such that the carrier and the cooler form a fluid channel, and, at 703, a process of connecting the power semiconductor module and the cooler with a thermoplastic compound.

[0053] According to one example of the method 700, the power semiconductor module further comprises a housing that is at least partially arranged on the second side of the carrier, wherein the housing forms a connection point on the second side. Furthermore, the process 703 of connecting the power semiconductor module and the cooler can comprise pressing the cooler onto the connection point of the housing and heating the cooler (e.g., to 250°C or 350°C or more) such that the housing melts at the connection point (e.g., using a heat staking process to produce the thermoplastic connection). When the material of the housing subsequently cures, the thermoplastic connection is created. To melt the material of the housing, the cooler can, for example, be placed in an oven or on a hot plate before being pressed onto the connection point of the power semiconductor module.This prevents overheating of the power semiconductor module and / or melting of the solder joints. If overheating or melting is not an issue (e.g., due to sufficient temperature stability of the power semiconductor module), both the power semiconductor module and the cooler pressed onto the joint can be placed in the furnace or on the hot plate and heated. The molten material can be cured, for example, at room temperature.

[0054] According to a further example of the method 700, the cooler is or comprises a plastic part having a connection point. In this case, a connection point on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes and / or a ridge and / or a groove. The method 703 for connecting the power semiconductor module and the cooler in this case may comprise a heat-staking process in which the power semiconductor module is heated to create a thermoplastic connection between the power semiconductor module and the cooler. The temperature to which the power semiconductor module can be heated may depend on the packaging and connection technology used in the power semiconductor module. According to one example, the power semiconductor module has no polymer or plastic parts at this point. The maximum temperature for the heat-staking process may, for example,more than 300°C, about 300°C or about 260°C.

[0055] According to another example, the process 703 of connecting the power semiconductor module and the cooler may include pressing the cooler connection point onto the connection point on the second side of the carrier and heating the connection point of the second side of the carrier using a laser so that the cooler connection point melts and fills the roughened surface texture and / or the micro-holes (such a process may be referred to as "laser-assisted plastic-to-metal joining" or "laser plastic welding"). The laser may, for example, be directed through the cooler material onto the carrier connection point. For this purpose, the cooler material and the laser wavelength may be matched such that the material is transparent or substantially transparent to the laser (an infrared laser may be used according to one example).Local heating of the junction on the second side of the carrier with a laser can prevent overheating and / or melting of other parts of the power semiconductor module. EXAMPLES

[0056] In the following, the power semiconductor module, the system and the method for manufacturing a power semiconductor module are explained in more detail using concrete examples. Example 1 is a power semiconductor module comprising: a carrier having a first side and an opposite second side, a power semiconductor chip disposed on the first side of the carrier, and a housing at least partially disposed on the second side of the carrier and forming a connection point for a cooler on the second side, the connection point completely surrounding an inner portion of the second side of the carrier, the inner portion being configured to be in direct contact with a cooling fluid within the cooler. Example 2 is the semiconductor module of Example 1, wherein the inner portion of the second side of the carrier has a plurality of cooling structures. Example 3 is the semiconductor module according to example 1 or 2, wherein the carrier comprises: a cover part for a fluid channel and a power electronics substrate having two conductive layers separated by an insulating layer, wherein the power electronics substrate is arranged between the power semiconductor chip and the cover part. Example 4 is the semiconductor module according to any one of the preceding examples, wherein the housing also at least partially covers the first side of the carrier. Example 5 is the semiconductor module of Example 4, wherein the carrier further comprises lateral sides connecting the first and second sides, and wherein the housing also at least partially covers the lateral sides. Example 6 is the semiconductor module according to any one of the preceding examples, wherein the connection point has a height measured perpendicular to the second side of 3 mm or more and a thickness measured parallel to the second side of 3 mm or more. Example 7 is a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip disposed on the first side of the carrier, wherein a connection point for a cooler on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes, the connection point completely surrounding an inner portion of the second side of the carrier, the inner portion configured to be in direct contact with a cooling liquid within the cooler. Example 8 is the power semiconductor module of Example 7, wherein the inner portion of the second side of the carrier has a plurality of cooling structures. Example 9 is the power semiconductor module according to example 7 or 8, wherein the carrier has an adhesion-promoting layer at least at the connection point on the second side, wherein the adhesion-promoting layer has a different reflection factor than the rest of the second side. Example 10 is the power semiconductor module according to any one of Examples 7 to 9, wherein the roughened surface texture and / or the micro-holes are structures produced by a laser or an etching process. Example 11 is the power semiconductor module according to any one of Examples 7 to 10, wherein the connection point has a thickness of 3 mm or more measured parallel to the second side. Example 12 is a system comprising: a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor die disposed on the first side of the carrier; and a cooler disposed on the second side of the carrier such that the carrier and the cooler form a fluid channel, wherein the power semiconductor module and the cooler are connected by a thermoplastic bond. Example 13 is the system of Example 12, wherein the power semiconductor module further comprises a housing disposed at least on the second side of the carrier, the housing forming a joint on the second side, the joint completely surrounding an inner portion of the second side of the carrier, the inner portion configured to be in direct contact with a cooling fluid within the cooler, and wherein the cooler is or comprises an aluminum part and the thermoplastic joint is formed by the joint. Example 14 is the system of Example 12, wherein a joint on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes, the joint completely surrounding an inner portion of the second side of the carrier, the inner portion configured to be in direct contact with a cooling fluid within the cooler, and the cooler is or includes a plastic part including a joint, the thermoplastic bond being formed by the joint of the plastic part. Example 15 is a method of manufacturing a system, the method comprising: providing a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor die disposed on the first side of the carrier; disposing a cooler on the second side of the carrier such that the carrier and the cooler form a fluid channel; and connecting the power semiconductor module and the cooler with a thermoplastic compound. Example 16 is the process of Example 15, wherein the fluid channel is sealed by the thermoplastic compound. Example 17 is the method of example 15 or 16, wherein the power semiconductor module further comprises a housing at least partially disposed on the second side of the carrier, the housing forming a joint on the second side, the joint completely surrounding an inner portion of the second side of the carrier, the inner portion configured to be in direct contact with a cooling fluid within the cooler, and wherein connecting the power semiconductor module and the cooler comprises pressing the cooler onto the joint of the housing and heating the cooler such that the housing melts at the joint. Example 18 is the method of example 15 or 16, wherein the cooler is or comprises a plastic part having a joint, wherein a joint on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes, wherein the joint completely surrounds an inner portion of the second side of the carrier, wherein the inner portion is configured to be in direct contact with a cooling fluid within the cooler, and wherein joining the power semiconductor module and the cooler comprises pressing the joint of the cooler onto the joint on the second side of the carrier and heating the joint of the second side of the carrier using a laser or a heat staking process such that the joint of the cooler melts and fills the roughened surface texture and / or the micro-holes. Example 19 is an apparatus comprising means for performing the method of any one of Examples 15 to 18.

[0057] While the disclosure has been illustrated and described with respect to one or more embodiments, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with regard to the various functions performed by the components or structures (assemblies, devices, circuits, systems, etc.) described above, the terms (including reference to a "means") used to describe such components are intended, unless otherwise indicated, to correspond to any component or structure that performs the stated function of the described component (e.g., that is functionally equivalent), even if it is not structurally equivalent to the disclosed structure that performs the function in the example implementations of the disclosure presented herein.

Claims

[1] Power semiconductor module (100) comprising: a carrier (110) having a first side (111) and an opposite second side (112), a power semiconductor chip (120) arranged on the first side (111) of the carrier (110), and a housing (130) arranged at least partially on the second side (112) of the carrier (110) and forming a connection point for a cooler on the second side (112), the connection point completely surrounding an inner portion (112') of the second side (112) of the carrier (110), the inner portion (112') being configured to be in direct contact with a cooling fluid within the cooler, wherein the carrier (110) has a base plate (110_1) designed as a cover for a fluid channel, and a power electronics substrate (110_2) having two conductive layers separated by an insulating layer, wherein the power electronics substrate (110_2) is arranged between the power semiconductor chip (120) and the base plate (110_1). [2] The semiconductor module (100) of claim 1, wherein the inner portion (112') of the second side (112) of the carrier (110) comprises a plurality of cooling structures (114). [3] Semiconductor module (100) according to one of the preceding claims, wherein the housing (130) also at least partially covers the first side (111) of the carrier (110). [4] The semiconductor module (100) of claim 3, wherein the carrier (110) further comprises lateral sides (113) connecting the first and second sides (111, 112), and wherein the housing (130) also at least partially covers the lateral sides (113). [5] Semiconductor module (100) according to one of the preceding claims, wherein the connection point has a height measured perpendicular to the second side (112) of 3 mm or more and a thickness measured parallel to the second side (112) of 3 mm or more. [6] Power semiconductor module (300) comprising: a carrier (110) having a first side (111) and an opposite second side (112), and a power semiconductor chip (120) arranged on the first side (111) of the carrier (110), wherein a connection point (115) for a cooler on the second side (112) of the carrier (110) has a roughened surface texture and / or a plurality of micro-holes, wherein the connection point (115) completely surrounds an inner portion (112') of the second side (112) of the carrier (110), wherein the inner portion (112') is configured to be in direct contact with a cooling fluid within the cooler. [7] The power semiconductor module (300) of claim 6, wherein the inner portion (112') of the second side (112) of the carrier (110) comprises a plurality of cooling structures (114). [8] Power semiconductor module (300) according to claim 6 or 7, wherein the carrier (110) has an adhesion-promoting layer at least at the connection point (115) on the second side (112), wherein the adhesion-promoting layer has a different reflection factor than the rest of the second side (112). [9] Power semiconductor module (300) according to one of claims 6 to 8, wherein the roughened surface texture and / or the micro-holes are structures produced by means of a laser or an etching process. [10] Power semiconductor module (300) according to one of claims 6 to 9, wherein the connection point (115) has a thickness of 3 mm or more measured parallel to the second side. [11] System (200, 400) which has: a power semiconductor module (100, 210, 300, 410) comprising: a carrier (110) having a first side (111) and an opposite second side (112), and a power semiconductor chip (120) arranged on the first side (111) of the carrier (110), and a cooler (220, 420) arranged on the second side (112) of the carrier (110) such that the carrier (110) and the cooler (220, 420) form a fluid channel, wherein the power semiconductor module (100, 210, 300, 410) and the cooler (220, 420) are connected by a thermoplastic compound, and wherein the carrier (110) has a base plate (110_1) designed as a cover for a fluid channel, and a power electronics substrate (110_2) having two conductive layers separated by an insulating layer, wherein the power electronics substrate (110_2) is arranged between the power semiconductor chip (120) and the base plate (110_1). [12] The system (200) of claim 11, wherein the power semiconductor module (100, 210) further comprises a housing (130) arranged at least on the second side (112) of the carrier (110), wherein the housing (130) forms a joint on the second side (112), wherein the joint completely surrounds an inner portion (112') of the second side (112) of the carrier (110), wherein the inner portion (112') is configured to be in direct contact with a cooling fluid within the cooler (210), and wherein the cooler (210) is or comprises an aluminum part and the thermoplastic joint is formed by the joint. [13] System (200, 400) which has: a power semiconductor module (100, 210, 300, 410) comprising: a carrier (110) having a first side (111) and an opposite second side (112), and a power semiconductor chip (120) arranged on the first side (111) of the carrier (110), and a cooler (220, 420) arranged on the second side (112) of the carrier (110) such that the carrier (110) and the cooler (220, 420) form a fluid channel, wherein the power semiconductor module (100, 210, 300, 410) and the cooler (220, 420) are connected by a thermoplastic compound, wherein a connection point (115) on the second side (112) of the carrier (110) has a roughened surface texture and / or a plurality of micro-holes, wherein the connection point (115) completely surrounds an inner portion (112') of the second side (112) of the carrier (110), wherein the inner portion (112') is configured to be in direct contact with a cooling fluid within the cooler (420), and wherein the cooler (420) is or comprises a plastic part having a connection point, wherein the thermoplastic connection is formed by the connection point of the plastic part. [14] A method (700) for manufacturing a system, the method (700) comprising: Providing (701) a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip arranged on the first side of the carrier, Arranging (702) a cooler on the second side of the carrier so that the carrier and the cooler form a fluid channel, and Connecting (703) the power semiconductor module and the cooler with a thermoplastic compound, wherein the carrier has a base plate which is designed as a cover for a fluid channel, and a power electronics substrate which has two conductive layers separated by an insulating layer, wherein the power electronics substrate is arranged between the power semiconductor chip and the base plate. [15] The method (700) of claim 14, wherein the fluid channel is sealed by the thermoplastic compound. [16] The method (700) of claim 14 or 15, wherein the power semiconductor module further comprises a housing at least partially disposed on the second side of the carrier, the housing forming a joint on the second side, the joint completely surrounding an inner portion of the second side of the carrier, the inner portion being configured to be in direct contact with a cooling liquid within the cooler, and wherein connecting (703) the power semiconductor module and the cooler comprises pressing the cooler onto the joint of the housing and heating the cooler such that the housing melts at the joint. [17] A method (700) for manufacturing a system, the method (700) comprising: Providing (701) a power semiconductor module comprising: a carrier having a first side and an opposite second side, and a power semiconductor chip arranged on the first side of the carrier, Arranging (702) a cooler on the second side of the carrier so that the carrier and the cooler form a fluid channel, and Connecting (703) the power semiconductor module and the cooler with a thermoplastic compound, wherein the cooler is or comprises a plastic part having a connection point, wherein a joint on the second side of the carrier has a roughened surface texture and / or a plurality of micro-holes, wherein the joint completely surrounds an inner portion of the second side of the carrier, wherein the inner portion is configured to be in direct contact with a cooling liquid within the cooler, and wherein connecting (703) the power semiconductor module and the cooler comprises pressing the connection point of the cooler onto the connection point on the second side of the carrier and heating the connection point of the second side of the carrier using a laser or a heat staking method such that the connection point of the cooler melts and fills the roughened surface texture and / or the micro-holes.

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