Device and method for testing and performing load and source dumps
The use of semiconductor switches with gate current curve transformers in high-voltage component testing allows for precise control of switching edges and current intensity, addressing the challenges of load and source bumps and ensuring safe and compliant testing.
Patent Information
- Application Number
- DE102023004643
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-11-15
- Publication Date
- 2025-05-15
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing high-voltage component testing technologies face challenges in simulating precise switching edges and controlling current intensity and edge steepness, leading to issues such as EMC emission limit violations and potential component damage during load and source bumps.
A device and method utilizing semiconductor switches with gate current curve transformers, allowing for variable resistance and capacitance to influence switch-off behavior, thereby adapting the switching edge to vehicle conditions and ensuring timely separation during high-voltage component tests.
The solution enables precise control over switching edges and current intensity, ensuring compliance with required separation times and preventing component damage, while also allowing for simulation of various switching edges and automated operation.
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Abstract
Description
[0001] The invention relates to a device for testing and performing load and source dumps during high-voltage component testing for vehicles. The invention also relates to a method for testing and performing load and source dumps.
[0002] Electrical switching elements, such as driver modules, generally have a fixed, unchangeable edge slew rate. This may not be optimally adapted to a specific application. Therefore, when using standard modules, standard assemblies, or standard components, it may not always be possible to influence the internal drive current of the respective standard element. An excessively high edge slew rate of a switching operation can, for example, lead to EMC emission limits being exceeded. Furthermore, an excessively high or missing current limitation in the event of a fault, such as a short circuit, can lead to overloading of a component or assembly, which can cause damage.
[0003] From DE 10 2010 038 623 A1, a circuit arrangement for limiting the current intensity and / or edge steepness of electrical signals is known.
[0004] Further driver circuits are described in US 2008 180 158 A1, US 2014 035 656 A1 and WO 2007 069 281 A1.
[0005] One problem with driver circuits is so-called load and source dumps, which must be considered according to MBN11123 and ISO21498, respectively. A load dump is defined as a sudden disconnection of the electric drive train from the HV battery or HV source during generator operation. Accordingly, a source dump is defined as a sudden disconnection of the electric drive train from the HV battery or HV source during motor operation.
[0006] Therefore, so-called high-voltage component tests are conducted, with a separation time of 10 - 100 µs required according to MBN11123 or ISO21498. In practice, a semiconductor switch switches faster than 10 µs, and an HV contactor switches slower than 100 µs.
[0007] For example, conventional separating agent solutions are known, for which an HV contactor can be used. However, this has an undefined switching edge with an arc and switches too slowly. Furthermore, reignition and extinguishing can make reproducibility impossible.
[0008] An insulated-gate bipolar transistor (IGBT) can also be used. This initially has a very flat edge, but then becomes very steep, causing the IGBT to switch too quickly.
[0009] It is also known from the prior art to connect individual or multiple high-voltage contactors in series as isolating elements. The disadvantage is a long and undefined switch-off time as well as an undefined and inconsistent switching edge.
[0010] The general problem is that high-voltage component tests generate high currents and voltages, which the test system must withstand. It would also be desirable to control the test bench control room.
[0011] The object of the present invention is to provide a device and a method which overcome the aforementioned disadvantages.
[0012] According to the invention, this object is achieved by a device having the features in claim 1, and here in particular in the characterizing part of claim 1.
[0013] Advantageous embodiments and further developments emerge from the dependent claims. A method is also described.
[0014] At the core of the device according to the invention, semiconductor switches with gate current waveform converters are provided in a driver path. The semiconductor switches with gate current waveform converters allow the switch-off behavior to be influenced by variable resistance and variable capacitance. Advantageously, the edge steepness or the shape of the switching edge can be influenced according to the invention. This can be achieved via the gate current waveform converter, whereby the edge can be adapted to the vehicle's conditions and a disconnection can be performed within the required time period.
[0015] The device is intended for testing and performing load and source dumps during high-voltage component testing for vehicles. The device can therefore be used to perform load and source dumps in HV component development in compliance with the standards required by the above-mentioned standards. Various switching edges, such as those found in vehicles, can advantageously be simulated. Furthermore, automated operation is possible. In other words, a test device using semiconductor technology for applied load and source dumps with variable edge steepness adjustment for high-voltage component testing can be proposed, which can be used particularly for electrically powered vehicles.
[0016] According to a very advantageous development of the concept, the gate current waveform converters can be digitally modified via a microcontroller. The gate current waveform converter can also be digitized via the microcontroller. Advantageously, a system controlled by a microcontroller, for example, with remote control, can provide the necessary safety during HV component testing in test bench operation.
[0017] According to an advantageous embodiment, it can be provided that the polarity of the semiconductor switches is switched via a contactor matrix. Advantageously, the contactor matrix allows the electric drive to be tested in both motor and generator mode.
[0018] A further advantageous embodiment may provide for a remote control. The remote control may be implemented via a bus system, in particular an automotive CAN bus, or wirelessly, such as via Bluetooth or the like.
[0019] The invention further relates to a method for testing and for carrying out load and source dumps in high-voltage component testing for vehicles, in particular carried out using a device according to the invention.
[0020] According to the invention, for the method by means of semiconductor switches with gate current waveform converters, a turn-off behavior is influenced by variable resistance and variable capacitance.
[0021] According to a very advantageous development of the idea, it can be provided that the gate current waveform converters can be changed digitally via microcontrollers, and / or that a polarity of the semiconductor switches is switched via a contactor matrix.
[0022] According to a very advantageous development of the idea, it can be provided that control is carried out remotely via a bus system or wirelessly.
[0023] The same advantages and features apply to the method as already described with regard to the device.
[0024] Further advantageous embodiments of the device according to the invention and of the method also emerge from the exemplary embodiment which is illustrated in more detail below with reference to the figure.
[0025] It shows: Fig. 1 a schematic representation of the device or method;
[0026] In the presentation of the Fig. 1 shows a possible embodiment of the device 1 in a schematic illustration. Semiconductor switches with gate current path converters 4 are provided in a driver path, and the turn-off behavior can be influenced by a variable resistor and variable capacitance through the semiconductor switches with gate current path converters 4. There can be any number n of the semiconductor switches with gate current path converters 4, which can be referred to as RC elements. These are provided on a driver circuit 3.
[0027] In one embodiment, a remote control 2 can be provided, which has a bus system 5. The bus system 5 can be implemented, for example, as a CAN bus with or without Bluetooth and / or as another microcontroller. In a further embodiment, a contactor matrix 7 can be provided. In the right-hand area of the illustration, a high-voltage component 8 to be tested, also referred to as a device under test (DUT), as well as a DC power source 6, which can be implemented, for example, as a laboratory power supply or as an HV traction battery, are also provided. Information can be fed back to the bus system 5 from the locations 11 where current is applied, as well as from the location 12 where voltage is applied. This is indicated by the dashed arrows with the reference numeral 10. The arrows shown as solid lines with the reference numeral 9 indicate a control or network within the device 1.
[0028] Advantageously, the method according to the invention and the device 1 according to the invention can be used to influence the edge steepness or the profile of the switching edge. This can be done via the gate current curve converter 4, whereby the edge can be adapted to the vehicle conditions and a disconnection can be carried out within the required time period. QUOTES CONTAINED IN THE DESCRIPTION
[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature
[0000] DE 10 2010 038 623 A1
[0003] US 2008 180 158 A1
[0004] US 2014 035 656 A1
[0004] WO 2007 069 281 A1
[0004]
Claims
[1] Device (1) for testing and performing load and source dumps during high-voltage component testing for vehicles, characterized by that semiconductor switches with gate current waveform converters (4) are provided in a driver path, wherein the semiconductor switches with gate current waveform converters (4) can influence a switch-off behavior by means of variable resistance and variable capacitance. [2] Device (1) according to claim 1, characterized by that the gate current waveform converters (4) can be changed digitally via microcontroller. [3] Device (1) according to claim 1 or 2, characterized by that the polarity of the semiconductor switches is switched via a contactor matrix. [4] Device (1) according to claim 1, 2 or 3, characterized by that a remote control (2) is provided. [5] Method for testing and for carrying out load and source dumps in high-voltage component testing for vehicles, in particular carried out with a device (1) according to one of claims 1 to 4, characterized by that semiconductor switches with gate current waveform converters (4) influence the turn-off behavior by variable resistance and variable capacitance. [6] Method according to claim 5, characterized by that the gate current waveform converters (4) can be changed digitally via microcontroller. [7] Method according to claim 5 or 6, characterized by that a polarity of the semiconductor switches is switched via a contactor matrix (7). [8] Device (1) according to claim 5, 6 or 7, characterized by that control is carried out remotely via a bus system or wirelessly.
Citation Information
Patent Citations
relay control device for a direct current electric device
DE102005022857A1
Motor control circuit for a battery-powered power tool
DE102008040793A1
Test device for a power converter device
DE102009020911A1
Circuit arrangement and method for limiting current and / or slew rate of electrical signals
DE102010038623A1
FET low pass
DE202007009332U1