Semiconductor structure for a semiconductor device

Abstract

A semiconductor structure (1) for a semiconductor device is specified, wherein the semiconductor structure (1) comprises a first n-doped semiconductor layer (4) which has an n-doping (c n ) exhibits a first dopant concentration (c A ) of a first n-doper and a second doper concentration (c B ) of a second n-doping agent that is different from the first n-doping agent, wherein - the first n-doper is intended to adjust a mechanical property of the semiconductor structure (1), - the second n-doping agent is intended to adjust an n-conductivity, and - the first dopant concentration (c A ) of the first n-doper in the first n-doped semiconductor layer (4) is at most as large as the second dopant concentration (c B ) of the second n-doping agent.

Description

[0001] A semiconductor structure is specified for a semiconductor device. For example, the semiconductor structure is suitable for a semiconductor device that emits or detects electromagnetic radiation, where the radiation may have a wavelength in the visible, approximately red to infrared, spectral range.

[0002] Semiconductor devices that emit red or infrared radiation can be manufactured, for example, from compound semiconductors based on arsenide. Tellurium is one suitable n-doper for this purpose. However, due to its particle size, tellurium causes relatively high stress within the semiconductor crystal. This leads, among other things, to an increased risk of breakage.

[0003] One of the tasks to be solved in this case is, among other things, to specify a semiconductor structure of improved quality.

[0004] This task is solved, among other things, by a semiconductor structure with the features of the independent claim.

[0005] Further advantages and configurations of the semiconductor structure are the subject of the dependent claims.

[0006] According to at least one embodiment of a semiconductor structure for a semiconductor device, this structure comprises a first n-doped semiconductor layer with n-doping. The n-doping can consist of a first concentration of a first n-doping agent and a second concentration of a second n-doping agent that differs from the first n-doping agent. The first n-doping agent can provide a base level of doping, and the second n-doping agent can be used to adjust the n-doping concentration from the base level to a desired level. Co-doping with the first and second n-doping agents advantageously enables a combination of properties that characterize the respective n-doping agents.

[0007] According to at least one embodiment or configuration, the first n-doping agent is intended to adjust a mechanical property of the semiconductor structure. For example, this mechanical property could be the hardness, i.e., the mechanical resistance that the semiconductor structure offers to the mechanical penetration of another body. Furthermore, the second n-doping agent can be intended to adjust or adapt the n-conductivity of the first n-doped semiconductor layer or the semiconductor structure. By combining the first and second n-doping agents, the mechanical and electrical properties of the first n-doped semiconductor layer or the semiconductor structure can thus be specifically adjusted.

[0008] According to at least one embodiment or configuration, the first dopant concentration of the first n-doper in the first n-doped semiconductor layer is, at least in some regions, preferably in all regions, at most as high as the second dopant concentration of the second n-doper. In particular, the first dopant concentration of the first n-doper in the first n-doped semiconductor layer is lower than the second dopant concentration of the second n-doper. For example, the second n-doper can be a material that results in less strain in the semiconductor structure than the first n-doper. By combining the first and second n-dopers, the strain can advantageously be reduced compared to a semiconductor structure doped only with the first n-doper.This allows for better processing of the semiconductor structure during manufacturing, for example in a wafer assembly. The breakage rate can thus be reduced and the yield advantageously increased.

[0009] According to at least one embodiment of a semiconductor structure for a semiconductor device, this comprises a first n-doped semiconductor layer with an n-doping composition consisting of a first dopant concentration of a first n-doper and a second dopant concentration of a second n-doper that is different from the first n-doper, wherein - the first n-doper is intended to adjust a mechanical property of the semiconductor structure, - the second n-doping agent is intended to adjust an n-conductivity, and - the first dopant concentration of the first n-doper in the first n-doped semiconductor layer is at least in some regions no more than the second dopant concentration of the second n-doper.

[0010] For example, the first dopant concentration can have values ​​between and including 10 16 cm -3 and including 5*10 17 cm -3 assume. Furthermore, the second dopant concentration can have values ​​between and including 5*10 17 cm -3 and including 2*10 21 cm -3 assume. Furthermore, the n-doping can take values ​​between 5*10 17 cm -3 and including 2*10 21 cm -3 assume.

[0011] According to at least one embodiment or configuration, the first n-doper has a larger particle size than the second n-doper. Due to its smaller particle size, the second n-doper can exhibit a better match to the lattice constant of a semiconductor material contained in the first n-doped semiconductor layer or in the semiconductor structure, and therefore integrate better into the crystal structure of the semiconductor material than the first n-doper, resulting, for example, in lower strains. By combining the first and second n-dopers, it is therefore possible to reduce the strains compared to a semiconductor structure with n-doping consisting solely of the first n-doper.

[0012] According to at least one embodiment or configuration, the first n-doped semiconductor layer has regions with varying levels of n-doping, wherein the ratio of the second dopant concentration to the first dopant concentration is greater in a region of higher n-doping than in a region of lower n-doping. By increasing the use of the second n-doper in more highly doped regions, stronger strains in the crystal structure, caused, for example, by the first n-doper, can be prevented, thus achieving improved crystal quality.

[0013] According to at least one embodiment or configuration, the semiconductor structure is suitable for use in the low-frequency range of the visible spectrum up to a range of even lower frequencies adjacent to the low-frequency range, for example, for use in the red to infrared wavelength range. The semiconductor structure can, for example, be based on at least one arsenide compound semiconductor.

[0014] In this context, “based on an arsenide compound semiconductor” means, for example, that a semiconductor structure designated as such, or a part thereof, is made of Al x Ga 1- x As z P 1-z This includes the elements 0 ≤ x ≤ 1 and 0 ≤ z ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it can contain one or more dopants as well as additional components.

[0015] According to at least one embodiment or configuration, the first n-doped semiconductor layer is an n-doped AlGaAsP, AlGaAs or GaAs layer.

[0016] According to at least one embodiment or configuration, the first n-doper is a dopant suitable for a semiconductor structure with an application range in the low-frequency region of the visible spectrum up to an adjacent region of even lower frequencies, for example, in the red to infrared wavelength range. The same can apply to the second n-doper. For example, tellurium (Te) is a suitable first n-doper. Silicon (Si) is another suitable second n-doper.

[0017] According to at least one embodiment or configuration, the semiconductor structure comprises a second n-doped semiconductor layer with n-doping consisting of a first dopant concentration of the first n-doper and a second dopant concentration of the second n-doper, wherein the n-doping of the second n-doped semiconductor layer is lower than the n-doping of the first n-doped semiconductor layer. The ratio of the first dopant concentration to the second dopant concentration can be specifically adjusted so that the second n-doped semiconductor layer exhibits the desired properties, such as the desired hardness and n-conductivity. For example, the first dopant concentration of the first n-doper in the second n-doped semiconductor layer is at most as high as the second dopant concentration of the second n-doper.

[0018] According to at least one embodiment or configuration, the second n-doped semiconductor layer is an n-doped GaAs layer. The second n-doped semiconductor layer can form a heterostructure with the first n-doped semiconductor layer, for example a GaAs / AlGaAsP or AlGaAs heterostructure.

[0019] According to at least one embodiment or configuration, the first n-doped semiconductor layer is grown on the second n-doped semiconductor layer. For example, the first n-doped semiconductor layer can be epitaxially grown on the second n-doped semiconductor layer.

[0020] Furthermore, the semiconductor structure can have a growth substrate on which the second n-doped semiconductor layer has been grown, in particular epitaxially.

[0021] For example, the second n-doped semiconductor layer may be a buffer layer designed to reduce lattice mismatch between the growth substrate and the first n-doped semiconductor layer.

[0022] The n-type doping can increase in the growth direction in which the semiconductor layers were deposited. This increase can, for example, occur in steps, exhibiting constant doping levels in certain regions. Similarly, the first and second dopant concentrations can each increase in steps in the growth direction, exhibiting constant doping levels in certain regions. However, it is also possible for the increase to be continuous, at least in certain regions.

[0023] According to at least one embodiment or configuration, the semiconductor structure has an active zone grown on the first n-doped semiconductor layer and a p-doped semiconductor layer grown on the active zone.

[0024] The active zone can be used to generate or detect electromagnetic radiation, where the radiation has a wavelength in the visible, approximately red to infrared, spectral range. In the simplest case, the active zone comprises a pn junction. However, it is also possible for the active zone to contain a sequence of single layers, forming a quantum well structure, for example, a single quantum well (SQW) or multiple quantum well (MQW).

[0025] According to at least one embodiment or configuration, the semiconductor structure comprises a further first n-doped semiconductor layer, a further active zone, and a further p-doped semiconductor layer, which are grown on top of each other in the specified sequence, with the further first n-doped semiconductor layer being arranged on the p-doped semiconductor layer. The semiconductor structure can thus have two monolithically integrated active zones. For example, the first n-doped layers, the active zones, and the p-doped layers can have the same structure and, in particular, be identically configured. However, it is also possible for them to differ from one another. For example, it is conceivable that the active zones are configured for the emission or detection of radiation of different wavelengths.

[0026] According to at least one embodiment or configuration, the semiconductor structure comprises an n-doped tunnel layer arranged between the p-doped semiconductor layer and the first further n-doped semiconductor layer. In particular, the n-doped tunnel layer has n-doping consisting of a first dopant concentration of the first n-doper and a second dopant concentration of the second n-doper. The n-doping concentration of the n-doped tunnel layer can be greater than the n-doping concentration of the first n-doped semiconductor layer(s). For example, the first dopant concentration of the first n-doper in the n-doped tunnel layer is at most as large as the second dopant concentration of the second n-doper.

[0027] According to at least one embodiment or configuration, all n-doped semiconductor layers of the semiconductor structure each have an n-doping composition consisting of a first dopant concentration of the first n-doper and a second dopant concentration of the second n-doper, which differs from the first n-doper. The composition can be specifically chosen such that, for example, the mechanical and electrical properties of the respective layer are optimally adjusted for their determination within the semiconductor structure. For example, the first dopant concentration of the first n-doper in all n-doped semiconductor layers is at most as high as the second dopant concentration of the second n-doper.

[0028] According to at least one embodiment of an optoelectronic semiconductor device, it has a semiconductor structure of the type described above. For example, the optoelectronic semiconductor device can be a radiation-emitting or detecting device that emits or detects radiation with a wavelength in the visible, approximately red to infrared, spectral range.

[0029] The optoelectronic semiconductor device can have an n-type contact and a p-type contact, allowing it to be electrically connected externally. The n-type contact can supply power to an n-type region of the optoelectronic semiconductor device, comprising the first n-doped semiconductor layer and, optionally, further n-doped semiconductor layers. The p-type contact can supply power to a p-type region of the optoelectronic semiconductor device, comprising the p-doped semiconductor layer and, optionally, further p-doped semiconductor layers.

[0030] The radiation-emitting semiconductor component can be an LED, in particular an infrared LED (IRED), or a laser diode such as a high-power laser diode or a VCSEL (vertical-cavity surface-emitting laser).

[0031] The semiconductor structure or optoelectronic semiconductor component is suitable, for example, for vehicle applications, such as distance sensors in autonomous driving, for mobile phone applications or industrial applications.

[0032] Further advantages, advantageous embodiments and further developments result from the exemplary embodiments described below in conjunction with the figures.

[0033] They show: Fig. 1 a cross-sectional view of a semiconductor structure according to a first embodiment, Fig. 2 a doping profile according to a first embodiment, Fig. 3 a cross-sectional view of a semiconductor structure according to a second embodiment and Fig. 4A a cross-sectional view of a semiconductor structure and Fig. 4B a doping profile according to a comparative example.

[0034] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be provided with the same or similar reference numerals. The depicted elements and their relative sizes are not necessarily to be considered to scale; rather, individual elements may be exaggerated for clarity and / or better understanding.

[0035] In Fig. Figure 1 shows a first embodiment of a semiconductor structure 1 in a schematic cross-sectional view. The semiconductor structure 1 comprises a growth substrate 2 and a semiconductor layer sequence 10 arranged on the growth substrate 2. In particular, the semiconductor layer sequence 10 is grown epitaxially on the growth substrate 2. For example, semiconductor materials such as GaAs or SiC are suitable for the growth substrate 2. Depending on the application, the growth substrate 2 can be at least thinned or even completely removed after the semiconductor layer sequence 10 has been fabricated. Semiconductor materials based on arsenide compound semiconductors are suitable for the semiconductor layer sequence 10, so that, as already mentioned above, the semiconductor layer sequence 10 or a part thereof can be made of Al x Ga 1-x As z P 1-z can include, where 0 ≤ x ≤ 1 and 0 ≤ z ≤ 1.

[0036] The semiconductor layer sequence 10 comprises a first n-doped semiconductor layer 4, an active zone 5, and a p-doped semiconductor layer 6, which follow one another in a vertical direction V in the specified order. In particular, the vertical direction V is a growth direction in which the semiconductor layer sequence 10 grew. The first n-doped semiconductor layer 4 is, for example, made of AlGaAs or AlGaAsP. Furthermore, the p-doped semiconductor layer 6 can also be made of AlGaAs or AlGaAsP.

[0037] In the simplest case, active zone 5 can comprise a pn junction. However, it is also possible that active zone 5 contains a sequence of single layers, forming a quantum well structure, for example a single quantum well (SQW) or multiple quantum well (MQW).

[0038] The active zone 5 can be used to generate or detect electromagnetic radiation, the radiation having, for example, a wavelength in the visible, approximately red to infrared, spectral range. A significant portion of the radiation can, for example, enter or exit through a first main surface 1A of the semiconductor structure 1, which is located on a side of the semiconductor structure 1 facing away from the growth substrate 2.

[0039] Furthermore, the semiconductor layer sequence 10 can include a second n-doped semiconductor layer 3, which is arranged on a side of the first n-doped semiconductor layer 4 facing the growth substrate 2. The second n-doped semiconductor layer 3, for example, has GaAs and thus forms a heterostructure with the first n-doped semiconductor layer 4. The second n-doped semiconductor layer 3 can serve as a buffer layer, reducing lattice mismatch between the growth substrate 2 and the first n-doped semiconductor layer 4.

[0040] The first n-doped semiconductor layer 4 has an n-doping c n (cf.) Fig. 2) which consists of a first dopant concentration c A of a first n-doper and a second doper concentration c Ba second n-doper, which differs from the first n-doper. In particular, the first n-doper is intended to adjust a mechanical property of the semiconductor structure 1, while the second n-doper is intended to adjust the n-conductivity of the first n-doped semiconductor layer 4 or the semiconductor structure 1. For example, the mechanical property could be hardness. By combining the first and second n-dopers, the mechanical and electrical properties of the first n-doped semiconductor layer 4 or the semiconductor structure 1 can be specifically adjusted. For example, a base doping level can be achieved using the first n-doper, and then, starting from the base doping level, the second n-doper can be used to adjust the n-doping to a desired level c. n take place.

[0041] For example, the first dopant concentration is c A in the first n-doped semiconductor layer 4 at least in certain areas, preferably in all areas, at most as large as the second dopant concentration of the second n-doper c B The first dopant concentration c A values ​​between and including 10 16 cm -3 and including 5*10 17 cm -3 assume. Furthermore, the second dopant concentration c B Values ​​between and including 5*10 17 cm -3 and including 2*10 21 cm -3 assume.

[0042] Furthermore, the second n-doped semiconductor layer 3 can also exhibit n-doping, which consists of a first dopant concentration of the first n-doper and a second dopant concentration of the second n-doper. The ratio of the first dopant concentration to the second dopant concentration can be specifically adjusted so that the second n-doped semiconductor layer 3 exhibits the desired properties, such as the desired hardness and n-conductivity. For example, the first dopant concentration of the first n-doper in the second n-doped semiconductor layer 3 is at most as high as the second dopant concentration of the second n-doper. Furthermore, the n-doping of the second n-doped semiconductor layer 3 can be lower than the n-doping of the first n-doped semiconductor layer 4. Thus, the n-doping can increase in the vertical direction V.The increase can be step-like, for example, with a step forming between the first and second n-doped semiconductor layers 4, 3. However, it is also possible that the increase is continuous, at least in some regions.

[0043] The first and second n-dopers are, for example, dopants that are suitable for an arsenide-based semiconductor structure 1 due to their band gap. Tellurium (Te) is a suitable first n-doper, and silicon (Si) is a suitable second n-doper.

[0044] Advantageously, silicon has a smaller particle size than tellurium. Compared to an n-doping layer consisting of Te (see...) Fig. 4A and Fig. 4B) Co-doping with Te and Si can reduce the strain of semiconductor structure 1 while still maintaining the desired n-type conductivity. This strain reduction improves the processability of semiconductor structure 1 during fabrication, for example, in a wafer assembly. This can reduce the breakage rate and advantageously increase the yield. Furthermore, the semiconductor structure 1 exhibits sufficient mechanical stability due to the first n-type dopant.

[0045] Overall, the semiconductor structure 1, and therefore also an optoelectronic component comprising the semiconductor structure 1, exhibits improved quality.

[0046] In connection with the in Fig. 2. Diagram shown, in which the abscissa represents a layer thickness d of the semiconductor structure 1 in nm and the ordinate represents a dopant concentration c in cm. -3The properties of the first n-doped semiconductor layer 4 are explained in more detail below.

[0047] The first n-doped semiconductor layer 4 has an n-doping c n with a step-like profile, that is, with doping levels that are constant in certain regions. In a first region, which can range from a layer thickness d1 of approximately 100 nm to a layer thickness d2 of approximately 3600 nm, the n-doping is c n for example, about 10 18 cm -3 In a second region, which follows the first region in the vertical direction V and can range from a layer thickness d2 of approximately 3600 nm to a layer thickness d3 of approximately 7000 nm, the n-doping c n higher than in the first area and is, for example, about 7*10 19 cm -3 .

[0048] The n-doping c n consists of the first dopant concentration c Aand the second dopant concentration c B together, where the first dopant concentration c A and the second dopant concentration c B The first and second regions each exhibit constant levels, and the doping level in the second region is always higher than in the first region. Furthermore, the second dopant concentration c B higher than the first dopant concentration c A .

[0049] The first dopant concentration in the first area is c A1 = approximately 4.5*10 16 cm -3 and in the second area c A2 = approximately 10 17 cm -3 Furthermore, the second dopant concentration in the first region is c B1 = c n (in the first area) - c A1 = approximately 0.96*10 18 cm -3 and in the second area c B2 = c n (in the second area) - c A2 = approximately 6.99*10 19 cm -3A proportion of the first dopant concentration c A1 at the n-doping c n Therefore, in the first area it is approximately 4.5*10 16 cm -3 / 10 18 cm -3 = approximately 0.045. The proportion of the second dopant concentration c B1 Complementary to this is approximately 1 - 0.045 = 0.955. Furthermore, the proportion of the first dopant concentration is c. A2 at the n-doping c n in the second area about 10 17 cm -3 / 7*10 19 cm -3 = approximately 0.0014. The proportion of the second dopant concentration c B2 Complementary to this is approximately 1 - 0.0014 = 0.9986. Thus, the proportion of the second dopant concentration is c. B at the n-doping c n in the second area, i.e., in the area of ​​higher n-doping c n , larger than in the first area.

[0050] The ratio of the second dopant concentration to the first dopant concentration in the first region is c B1 / c A1 = approximately 0.96*10 18 cm -3 / 4.5*10 16 cm -3 = approximately 21, while in the second area c B2 / c A2 = approximately 6.99*10 19 cm -3 / 10 17 cm -3 = approximately 690, and is therefore many times greater in the higher-paying second area than in the lower-paying first area.

[0051] Combined with Fig. 3 A further embodiment of a semiconductor structure 1 is explained in more detail.

[0052] Semiconductor structure 1, compared to the one in Fig. In the embodiment shown in Figure 1, a further semiconductor layer sequence 10' is arranged downstream of the semiconductor layer sequence 10 in the vertical direction V. This further semiconductor layer sequence 10' comprises a further first n-doped semiconductor layer 4', a further active zone 5', and a further p-doped semiconductor layer 6', arranged one above the other in the specified order, in particular grown in the specified order, wherein the further first n-doped semiconductor layer 4' is arranged on the p-doped semiconductor layer 6 of the semiconductor layer sequence 10. For example, the first n-doped layers 4, 4', the active zones 5, 5', and the p-doped layers 6, 6' can have the same structure and, in particular, be identically configured. However, it is also possible for them to differ from one another. For example, it is conceivable that the active zones 5, 5' are configured for the emission or detection of radiation of different wavelengths.

[0053] The two semiconductor layer sequences 10, 10' and active zones 5, 5' can be monolithically integrated. This means, for example, that the semiconductor layer sequences 10, 10' form a continuous layer sequence that does not require an additional bonding agent, such as solder or adhesive.

[0054] For example, the semiconductor structure 1 between the two semiconductor layer sequences 10, 10' includes a tunnel junction 11. The tunnel junction 11 can have an n-doped tunnel layer 7 on one side facing the semiconductor layer sequence 10'. Furthermore, the tunnel junction 11 can have a p-doped tunnel layer 8 on one side facing the semiconductor layer sequence 10. In particular, the n-doped tunnel layer 7 has n-doping consisting of a first dopant concentration of the first n-doper and a second dopant concentration of the second n-doper. The n-doping of the n-doped tunnel layer 7 can be greater than the n-doping of the first n-doped semiconductor layer 4, 4'. Furthermore, it is possible that the first dopant concentration of the first n-doper in the n-doped tunnel layer 7 is at most as large as the second dopant concentration of the second n-doper.

[0055] Furthermore, the semiconductor structure 1 can exhibit all the features and advantages that are explained in connection with the first embodiment.

[0056] In connection with the Fig. 4A and Fig. Section 4B provides a more detailed comparison example of a semiconductor structure 100. The semiconductor structure 100 comprises a substrate 200, a first n-doped layer 400, an active region 500, a p-doped layer 600, and a second n-doped layer 300. The first n-doped layer 400 is an n-AlGaAs layer. The second n-doped layer 300 is an n-GaAs layer.

[0057] The n-doped layers 300, 400 are doped with a single n-doping agent, such as tellurium. In other words, the n-doping is c n with the first dopant concentration c A identical (cf.) Fig.4B). Such a semiconductor structure 100, in the case of n-doping with tellurium, exhibits high strain, particularly in more heavily doped regions, due to the particle size. Furthermore, the exclusive doping with tellurium contributes to the relatively high hardness of the semiconductor structure 100. Overall, this leads to poorer processability and a higher fracture rate compared to the embodiments.

[0058] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the patent claims, even if this feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments. Reference symbol list 1 Semiconductor structure 1A first main area 2. Growth substrate 3 second n-doped semiconductor layer 4 first n-doped semiconductor layer 4' further first n-doped semiconductor layer 5 active zones 5' additional active zone 6 p-doped semiconductor layer 6' further p-doped semiconductor layer 7 n-doped tunnel layer 8 p-doped tunnel layer 10 Semiconductor layer sequence 10' further semiconductor layer sequence 11 Tunnel crossing 100 Semiconductor structure according to comparative example 200 growth substrate 300 second n-doped semiconductor layer 400 first n-doped semiconductor layer 500 active zone 600 p-doped semiconductor layer c n n-doping c A , c A1 , c A2 first dopant concentration c E , c B1 , c B2 second dopant concentration d, d1, d2, d3 Layer thickness of the semiconductor structure V vertical direction

Claims

[1] Semiconductor structure (1) for a semiconductor component, wherein the semiconductor structure (1) comprises a first n-doped semiconductor layer (4) having an n-doping (c n ) consisting of a first dopant concentration (c A ) of a first n-dopant and a second dopant concentration (c B ) of a second n-dopant which is different from the first n-dopant, wherein - the first n-dopant is intended to adjust a mechanical property of the semiconductor structure (1), - the second n-dopant is intended to set an n-conductivity, and - the first dopant concentration (c A ) of the first n-dopant in the first n-doped semiconductor layer (4) is at least partially at most as large as the second dopant concentration (c B ) of the second n-dopant. [2] Semiconductor structure (1) according to the preceding claim, wherein the first n-dopant has a larger particle size than the second n-dopant. [3] Semiconductor structure (1) according to one of the preceding claims, wherein the first n-doped semiconductor layer (4) comprises regions of different n-doping levels (c n ), wherein a ratio of the second dopant concentration (c B ) to the first dopant concentration (c A ) is larger in an area of ​​higher n-doping than in an area of ​​lower n-doping. [4] Semiconductor structure (1) according to one of the preceding claims, wherein the first n-dopant is tellurium. [5] Semiconductor structure (1) according to one of the preceding claims, wherein the second n-dopant is silicon. [6] Semiconductor structure (1) according to one of the preceding claims, which is based on at least one arsenide compound semiconductor. [7] Semiconductor structure (1) according to one of the preceding claims, wherein the first n-doped semiconductor layer (4) is an n-doped AlGaAsP, AlGaAs or GaAs layer. [8] Semiconductor structure (1) according to one of the preceding claims, comprising a second n-doped semiconductor layer (3) having an n-doping (c n ) consisting of a first dopant concentration (c A ) of the first n-dopant and a second dopant concentration (c B ) of the second n-dopant, wherein the n-doping (c n ) of the second n-doped semiconductor layer (3) is less than the n-doping (c n ) of the first n-doped semiconductor layer (4). [9] Semiconductor structure (1) according to the preceding claim, wherein the second n-doped semiconductor layer (3) is an n-doped GaAs layer and forms a heterostructure with the first n-doped semiconductor layer (4). [10] Semiconductor structure (1) according to one of the two preceding claims, wherein the first n-doped semiconductor layer (4) is grown on the second n-doped semiconductor layer (3). [11] Semiconductor structure (1) according to one of claims 8 to 10, comprising a growth substrate (2), wherein the second n-doped semiconductor layer (3) is grown on the growth substrate (2). [12] Semiconductor structure (1) according to one of the preceding claims, which comprises an active zone (5) grown on the first n-doped semiconductor layer (4) and a p-doped semiconductor layer (6) grown on the active zone (5). [13] Semiconductor structure (1) according to the preceding claim, which comprises a further first n-doped semiconductor layer (4'), a further active zone (5') and a further p-doped semiconductor layer (6') grown on top of one another in the specified order, wherein the further first n-doped semiconductor layer (4') is arranged on the p-doped semiconductor layer (6). [14] Semiconductor structure (1) according to the preceding claim, which has an n-doped tunnel layer (7), wherein the n-doped tunnel layer (7) is arranged between the p-doped semiconductor layer (6) and the further first n-doped semiconductor layer (4') and has an n-doping (c n ) consisting of a first dopant concentration (c A ) of the first n-dopant and a second dopant concentration (c B ) of the second n-dopant, wherein the n-doping (c n) of the n-doped tunnel layer (7) is greater than the n-doping (c n ) of the first n-doped semiconductor layer (4). [15] Semiconductor structure (1) according to one of the preceding claims, wherein the first dopant concentration (c A ) between 10 16 and 5*10 17 cm -3 amounts. [16] Semiconductor structure (1) according to one of the preceding claims, wherein the second dopant concentration (c B ) between 5*10 17 and 2*10 21 cm -3 amounts.

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