Semiconductor device and method for its manufacture

Abstract

Method for manufacturing a semiconductor device (101) in which an electrical circuit comprising a semiconductor chip (1, 1A, 1B) and a plurality of metal wires (3) which are electrically connected to the semiconductor chip (1, 1A, 1B) is sealed by means of a sealing material (4), comprising the steps for: • Filling a cavity (11) and at least a part of a sealing material storage part (15) by means of the sealing material (4) by injecting the sealing material (4) from a first gate (12) of a mold (10, 20), wherein the mold (10, 20) comprises the cavity (11) in which the electrical circuit is arranged, the first gate (12) and a second gate (13) which are provided in the cavity (11), and the sealing material storage part (15) which is provided on an outer side of the cavity (11) to be connected to the second gate (13); and • Causing the sealing material (4), which fills the sealing material storage part (15), to flow back into the cavity (11) via the second gate (13).

Description

Background of the invention; Field of the invention

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. Description of the state of the art

[0002] A semiconductor device manufactured by injection molding has a structure in which a semiconductor chip is sealed with resin. Japanese Patent Application No. 5-36745 discloses a sealing mold that reduces the unfilled portion of the resin. The sealing mold contains a resin reservoir connected to a resin outlet gate. During resin injection, air bubbles that remain in a void within a cavity are discharged into the resin reservoir along with the resin. As a result, the unfilled portion is reduced.

[0003] JP 2000 - 176 959 A discloses a method for forming resin for multi-row frames and a resin forming device.

[0004] DE 11 2020 004 809 T5 discloses a device for semiconductor manufacturing in which bubbles remaining in the sealing material are prevented, and a method for manufacturing a semiconductor device using this device and semiconductor device.

[0005] JP H10 - 58 478 A discloses a transfer forming machine and a manufacturing process for semiconductor devices that uses this machine.

[0006] DE 11 2017 007 135 B4 discloses a method for manufacturing a semiconductor device, which includes a resin supply step.

[0007] JP 2003 - 218 146 A discloses a manufacturing process for resin-sealed semiconductor devices and an associated forming device. Summary

[0008] In the injection molding process for manufacturing semiconductor devices, deformation of an elongated metal wire, which connects, for example, a semiconductor chip or a terminal frame, occurs due to the flow of the resin filling the mold. The metal wire forms an electrical circuit containing a semiconductor chip; therefore, deformation of the elongated shape of the metal wire could potentially reduce the reliability of the semiconductor device.

[0009] The present disclosure provides methods for manufacturing a semiconductor device and a semiconductor device which are capable of increasing reliability.

[0010] This problem is solved by the features of the independent claims. The dependent claims contain advantageous embodiments of the invention.

[0011] A method for manufacturing a semiconductor device according to one aspect of the present disclosure is a method for manufacturing a semiconductor device in which an electrical circuit comprising a semiconductor chip and a plurality of metal wires electrically connected to the semiconductor chip is sealed by means of a sealing material. The method for manufacturing the semiconductor device comprises the processes of: filling a cavity and at least a portion of a sealing material storage area with the sealing material by injecting the Sealing material from a first gate of a mold, the mold comprising the cavity in which the electrical circuit is arranged, the first gate and a second gate which are provided in the cavity, and the sealing material storage portion which is provided on an outer side of the cavity to be connected to the second gate; and causing the sealing material which fills the sealing material storage portion to flow back into the cavity via the second gate.

[0012] A method for manufacturing a semiconductor device capable of increasing reliability is provided.

[0013] These and other tasks, features, aspects and advantages of the present invention will become clearer with reference to the following detailed description of the present invention in conjunction with the accompanying figures. Brief description of the characters Fig. Figure 1 is a top view illustrating a configuration of a semiconductor device according to embodiment 1. Fig. Figure 2 is a top view illustrating a configuration of a metal wire according to embodiment 1. Fig. Figure 3 is a flowchart illustrating a method for manufacturing the semiconductor device according to embodiment 1. Fig. Figure 4 is a diagram illustrating a process for manufacturing the semiconductor device according to embodiment 1. Fig. Figure 5 is a diagram illustrating a process for manufacturing the semiconductor device according to embodiment 1. Fig. Figure 6 is a diagram illustrating a process for manufacturing the semiconductor device according to embodiment 1. Fig. Figure 7 is a diagram illustrating a process for manufacturing the semiconductor device according to embodiment 1. Fig. Figure 8 is a top view illustrating the deformation of the metal wire during a filling process. Fig. Figure 9 is a diagram illustrating an internal configuration of a mold and resin flow during the filling process and a backflow process. Fig. Figure 10 is a top view illustrating the deformation of the metal wire during the reflux process. Fig. Figure 11 is a diagram illustrating an internal configuration of a mold and a resin flow in embodiment 2. Fig. Figure 12 is a diagram illustrating an internal configuration of a mold and a resin flow in embodiment 3. Fig. Figure 13 is a diagram illustrating a process for manufacturing a semiconductor device according to embodiment 4. Fig. Figure 14 is a flowchart illustrating a method for manufacturing the semiconductor device according to embodiment 4. Fig. Figure 15 is a diagram illustrating the deformation of a metal wire during a filling process. Description of preferred embodiments<Ausführungsform 1>

[0014] Fig. Figure 1 is a top view illustrating a configuration of a semiconductor device 101 according to embodiment 1. The semiconductor device 101 comprises a semiconductor chip 1, a connection frame 2, a plurality of metal wires 3, and a sealing material 4. Fig. Figure 1 illustrates a perspective view of an inner part of the semiconductor device 101.

[0015] The semiconductor chip 1 is connected to an upper surface of the connection frame 2 via a bonding material (not shown) such as solder. The semiconductor chip 1 is made of a semiconductor such as silicon (Si) or a so-called wide-bandgap semiconductor such as silicon carbide (SiC), gallium oxide (GaN), or gallium oxide.

[0016] The semiconductor chip 1 according to embodiment 1 comprises a chip 1A of an insulated-gate bipolar transistor (IGBT) and a chip 1B of an integrated circuit associated with the IGBT chip 1A. The IC chip 1B outputs a gate signal to the IGBT chip 1A, and the IGBT chip 1A performs a switching operation based on the gate signal. A metal-oxide-semiconductor field-effect transistor (MOSFET) chip can be provided instead of the IGBT chip 1A.

[0017] The semiconductor device 101 according to embodiment 1 is a three-phase inverter, and it comprises a low-side IC chip 1B (LVIC), a high-side IC chip 1B (HVIC), and six IGBT chips 1A.

[0018] The connection frame 2 is a frame-shaped component, for example, made from a flat, conductive plate that has been processed to be bent. Part of the connection frame 2 is exposed by the sealing material 4 and functions as a connection element.

[0019] Each of the multiple metal wires 3 is electrically connected to the semiconductor chip 1. In embodiment 1, three IGBT chips 1A are connected to a low-side IC chip 1B via the metal wire 3. Similarly, three IGBT chips 1A are connected to a high-side IC chip 1B via the metal wire 3.

[0020] The connection frame 2 and the metal wire 3 function as internal wiring of the semiconductor device 101.

[0021] Fig. Figure 2 is a top view illustrating a configuration of the metal wire 3 according to embodiment 1. In this top view, the metal wire 3 has two curved parts 3A in an elongated shape. The curved part 3A is formed in a reverse flow process described below; therefore, the number of curved parts 3A can differ for each metal wire 3. In other words, at least one metal wire 3 from the plurality of metal wires 3 has two or more curved parts 3A in the elongated shape in a top view.

[0022] As in Fig. As illustrated in Figure 1, the sealing material 4 seals an electrical circuit consisting of the semiconductor chip 1, the connection frame 2, and the plurality of metal wires 3. The sealing material 4 according to embodiment 1 is an epoxy resin. The epoxy resin contains a filler to improve thermal conductivity. For example, the viscosity of the epoxy resin is equal to or greater than 5 Pa·s.

[0023] The distance between the terminal frame 2, which is provided with the IGBT chip 1A, and an outer surface of the sealing material 4, i.e., the thickness of the sealing material 4, is less than that of the sealing material 4 in the terminal frame 2, which is provided with the IC chip 1B. The thickness of the sealing material 4 in the terminal frame 2, which is provided with the IGBT chip 1A, is equal to or less than 0.5 mm.

[0024] The sealing material 4 has a rectangular shape in a top view. The rectangular shape has a first side 41 and a second side 42, which faces the first side 41. The sealing material 4 has a plurality of sealing material cutting marks 40, which are provided on the first side 41 and the second side 42. The sealing material 4 according to embodiment 1 has three sealing material cutting marks 40, one each on the first side 41 and the second side 42 of the rectangular shape. However, the number of sealing material cutting marks 40 is not limited to this.

[0025] Fig. Figure 3 is a flowchart illustrating a method for manufacturing the semiconductor device 101 according to embodiment 1. Fig. 4 to Fig. Figure 7 are diagrams, each illustrating a process for manufacturing the semiconductor device 101 according to embodiment 1. Fig. 4 to Fig. Figure 7 illustrates a cross-section of a mold 10 used for injection molding. The semiconductor device 101 is manufactured using an injection molding machine. A case in which the sealing material 4 is a resin 4A is described below.

[0026] The form 10 has a cavity 11, a first gate 12, a second gate 13, a first pot 14, and a second pot 15, as shown in Fig. 4 illustrates.

[0027] The cavity 11 corresponds to an outer shape of a resin housing, that is, an outer shape of the sealing material 4 in the completed semiconductor device 101. Therefore, in a top view, the cavity 11 has a rectangular shape, similar to the completed sealing material 4, and the rectangular shape has the first side 41 and the second side 42.

[0028] The first gate 12 is provided on a side surface of the cavity 11 and functions as a flow inlet for the resin 4A. The first gate 12 according to embodiment 1 is provided on the first side 41 of the cavity 11.

[0029] The second gate 13 is provided on the side surface of the cavity 11 and functions as a flow outlet and flow inlet for the resin 4A. The second gate 13 according to embodiment 1 is provided on the second side 42 of the cavity 11.

[0030] The first pot 14 is provided on an outer side of the cavity 11 and is connected to the first gate 12. The first pot 14 is connected to the cavity 11 via the first gate 12.

[0031] The second pot 15 is a sealing material storage component. The second pot 15 is provided on the outer side of the cavity 11 and is connected to the second gate 13. The second pot 15 is connected to the cavity 11 via the second gate 13. The sealing material storage component can not only include the second pot 15 but also a flow path between the second pot 15 and the second gate 13.

[0032] In step S11, an electrical circuit is arranged in the cavity 11 of the shape 10, as shown in Fig. Figure 4 illustrates this. The electrical circuit is configured such that the IGBT chip 1A, the IC chip 1B, the terminal frame 2, and the metal wire 3 are electrically connected. In this step S11, the resin 4A, which has a tablet-like form, is placed in the first pot 14 of the mold 10 as the sealing material 4. A suitable quantity of the resin 4A, which has a tablet-like form, is determined based on the size of a gap between a lower surface of the terminal frame 2 and the mold 10 and the extent of any unfilled area. The approximate quantity is essentially 1.2 to 2.0 times the volume of the cavity 11. A resin with a suitable gel time is selected in step S11 to prevent an increase in the viscosity of the resin 4A during the progressive curing of the resin 4A in step S13 described below.

[0033] In step S12, the resin 4A is injected in liquid form from the first gate 12 of the mold 10 to fill the cavity 11 and the second pot 15 with the resin 4A, as shown in Fig. Figure 5 illustrates the process of filling the cavity. Here, the resin 4A fills the entire cavity 11 and at least part of the second pot 15. In this process, the injection molding device exerts pressure on a plunger 16, which is connected to the first pot 14. Accordingly, the resin 4A, in liquid form, is injected from the first pot 14 through the first gate 12 into the cavity 11, and it is further injected from the cavity 11 through the second gate 13 into the second pot 15. The resin 4A, in liquid form, is injected from the first pot 14 until at least part of the second pot 15 is filled. In other words, the resin 4A is over-injected with respect to a volume of the cavity 11.

[0034] According to this filling process in step S12, the resin 4A in liquid form also fills the gap between the lower surface of the connection frame 2 and the mold 10, thus reducing the occurrence of an unfilled area as a defect. A venting process can be carried out in the cavity 11 before the filling process, and in this case, the occurrence of the unfilled area can be further reduced.

[0035] During this filling process in step S12, the metal wire 3 is deformed by the flow of resin 4A, which is injected into the cavity 11 from the first gate 12. Fig. Figure 8 is a top view illustrating the deformation of the metal wire 3 during the filling process. Fig. 8. The resin 4A flows in one direction from a lower right side to a higher left side. A curved part 3A is formed in the elongated shape of the metal wire 3 in a top view by the flow of the resin 4A.

[0036] In step S13, the resin 4A, which has filled the second pot 15, flows back into the cavity 11 via the second gate 13, as in Fig. Figure 6 illustrates this. At this point, the injection molding device exerts pressure on a punch 17, which is connected to the second pot 15, and also reduces the pressure on the first punch 16. Specifically, the injection molding device exerts a higher pressure on the second punch 17 than that exerted on the first punch 16. Consequently, the resin 4a in the second pot 15 flows in a direction that differs from the direction in which the resin 4a flows during the filling process in step S12. In other words, the resin 4a flows backward. Fig. Figure 9 is a diagram illustrating an internal configuration of the mold 10 and the flow of resin 4A during the filling and backflow processes.

[0037] In this reflux process in step S13, the metal wire 3 is deformed again by the flow of the resin 4A, which moves from the second gate 13 into the cavity 11. Fig. Figure 10 is a top view illustrating the deformation of the metal wire 3 during the reflux process. Fig. In section 10, the resin 4A flows in one direction from a left upper side to a right lower side. Two or more curved parts 3A are formed in the elongated shape of the metal wire 3 in a top view by the flow of the resin 4A. The direction in which the resin 4A flows varies depending on the position of the metal wire 3 in the cavity 11. Consequently, the number of curved parts 3A of the metal wire 3 can vary depending on the position of the metal wire 3. Two or more curved parts 3A are formed in a top view in the elongated shape of at least one metal wire 3 from the plurality of metal wires 3 by this backflow process.

[0038] In step S13, the degree of curvature of the metal wire 3, which was formed in step S12, is corrected. The injection molding device can perform a minor adjustment of the movement of the second punch 17 based on an analysis result of the degree of correction of the metal wire 3.

[0039] In step S14, the resin 4A is used, as in Fig. Figure 7 illustrates the cured resin. The injection molding device controls a balance between a pressure A, which is exerted on the first punch 16 and a pressure B, which is exerted on the second punch 17, to prevent the resin 4A from flowing during curing.

[0040] In step S15, the resin 4A, which has cured and extends from the first gate 12 or the second gate 13 towards the outer side of the cavity 11, is removed. This cured resin 4A, extending towards the outer side of the cavity 11, corresponds to a so-called cull and gate. The cull is, for example, the resin 4A cured in the first pot 14 and the second pot 15. The gate is, for example, the resin 4A cured in a flow path between the first pot 14 and the first gate 12, and in a flow path between the second pot 15 and the second gate 13. The cull and gate are bent and broken based on a lever principle, using the positions of the first gate 12 and the second gate 13 as support points.The numerous sealing material cut markings 40 are formed in such a way on the first side 41 and the second side 42 of the resin housing that they correspond to the positions at which the sprue block and the gate were bent and broken.

[0041] In summary, the method for manufacturing the semiconductor device according to embodiment 1 is the method for manufacturing the semiconductor device 101 in which the electrical circuit comprising the semiconductor chip 1 and the plurality of metal wires 3 which are electrically connected to the semiconductor chip 1 is sealed by means of the sealing material 4.The method for manufacturing the semiconductor device 101 comprises a process for filling the cavity 11 and at least a portion of the sealing material storage portion (the second pot 15) with the sealing material 4 by injecting the sealing material 4 from the first gate 12 of the mold 10, the mold 10 comprising the cavity 11 in which the electrical circuit is arranged, the first gate 12 and the second gate 13, which are provided in the cavity 11, and the sealing material storage portion, which is provided on the outer side of the cavity 11 to be connected to the second gate 13. The manufacturing method comprises a process for causing the sealing material 4, which fills the sealing material storage portion, to flow back into the cavity 11 via the second gate 13.

[0042] In the semiconductor device 101, which is manufactured using this method, the extent of deformation of the elongated shape of the metal wire 3 is reduced. Therefore, the reliability of the semiconductor device 101 is increased.

[0043] If, for example, the reverse flow process described in embodiment 1 is not carried out, a structure is formed such that the plurality of metal wires 3 are arranged close together, or a structure is formed such that the metal wire 3 and an edge of the semiconductor chip 1 are arranged close together. The metal wire 3 forms an electrical circuit encompassing the semiconductor chip 1; therefore, it is possible that such deformation of the metal wire 3 reduces the reliability of the semiconductor device 101.

[0044] Meanwhile, when the reflux process is carried out, the elongated shape of the metal wire 3, which was deformed during the filling process, is corrected. These metal wires 3 are configured such that a spatial distance is maintained between them, preventing them from electrically interfering with each other. Therefore, the reliability of the semiconductor device 101, as well as its lifetime, can be increased.

[0045] During the filling process, the resin 4A is continuously injected from the first gate 12 into the cavity 11 until the resin 4A fills the second pot 15. Accordingly, the resin 4A also fills the gap between the connecting frame 2 and the mold 10. As a result, the gap disappears. Even when the resin 4A, which has a higher percentage of filler content and a viscosity equal to or greater than 5 Pa·s than the sealing material 4, is used, the unfilled portion does not occur during the filling process in embodiment 1.

[0046] Such a high-quality resin package exhibits excellent heat dissipation properties and is suitable for a power control semiconductor device. For example, it is also possible to design the distance between the terminal frame 2, which is provided with the IGBT chip 1A, and the form 10 to be equal to or less than 0.5 mm. That is, according to the manufacturing process in embodiment 1, a package can be obtained in which the thickness of the resin 4A, which corresponds to the position where the IGBT chip 1A is mounted, is equal to or less than 0.5 mm. Both a reduction in size and an improvement in heat dissipation properties are achieved in the semiconductor device 101 with such a package.

[0047] As described above, the method for manufacturing the semiconductor device 101 according to embodiment 1 prevents the occurrence of an unfilled part of the resin 4A and also corrects the elongated shape of the metal wire 3. <Ausführungsform 2>

[0048] Fig. Figure 11 is a diagram illustrating an internal configuration of a mold 20 and a flow of resin 4A in embodiment 2. The position of the second gate 13 according to embodiment 2 differs from that of the second gate 13 according to embodiment 1.

[0049] The second gate 13 is arranged near a metal wire 31 which extends in a direction which has a largest angle from a multitude of angles between a direction in which the resin 4A is injected from the first gate 12 into the cavity 11 and a direction in which, in a top view, each of the metal wires 3 extends.

[0050] The direction in which the resin 4A is injected in embodiment 2 is a direction from the first side 41 towards the second side 42 of the cavity 11, and in other words a direction perpendicular to the first side 41.

[0051] For example, in Fig. 11 an angle between the direction in which nine metal wires 3 extend, which are arranged in a right half, and a direction perpendicular to the first side 41, smaller than an angle based on the metal wires 3 which are arranged in a left half. An angle between a direction in which the fifth and sixth metal wires 31 extend from a left side in Fig. 11 extends in a direction perpendicular to the first side 41, is greater than an angle between a direction of the other metal wires 3 and a direction of the first side 41. Accordingly, the second gate 13 is near the fifth and sixth metal wires 31 from the left side in Fig. 11 ordered.

[0052] The number of second gates 13 can increase or decrease according to the angle between the direction in which the metal wire 3 extends and the direction perpendicular to the first side 41. That is, the number of second gates 13 can be one, three, or more. For example, according to embodiment 2, the second gate 13 is also located near the first and second metal wires 32 from the left side. Fig. 11 ordered.

[0053] If, during the filling process, the angle between the direction in which the metal wire 3 extends and the direction in which the resin 4A flows in liquid form is large, the metal wire 3 is easily deformed, and the degree of deformation is also significant. The second gate 13 according to embodiment 2 is provided near the highly deformed metal wires 31 and 32.

[0054] During the reflux process, the resin 4A, which flows back from the second gate 13 into the cavity 11, is moved in one direction from the second side 42 towards the first side 41 of the cavity 11. Therefore, the elongated shapes of the metal wires 31 and 32, which were severely deformed during the filling process, are selectively corrected in the reflux process.

[0055] According to the method for manufacturing the semiconductor device in embodiment 2, the metal wire 3, which exhibits a strong deformation due to the flow of the resin 4A during the filling process, can be selectively corrected. <Ausführungsform 3>

[0056] Fig. Figure 12 is a diagram illustrating an internal configuration of the mold 30 and the flow of the resin 4A in embodiment 3. The positions of the first gate 12 and the second gate 13 according to embodiment 3 differ from those according to embodiment 1.

[0057] The first side 41 and the second side 42 of the cavity 11 correspond to sides that exhibit a small angle with respect to the direction in which the metal wire 3 to be corrected extends in the four sides that form the rectangular shape of the cavity 11. The first gate 12 is provided on the first side 41, and the second gate 13 is provided on the second side 42.

[0058] During the filling process according to embodiment 3, the resin 4A is injected in liquid form from a direction that is substantially perpendicular to the direction in which the metal wire 3 extends. Furthermore, during the reflux process, the resin 4A flows back from a direction perpendicular to the direction in which the metal wires 3 extend.

[0059] In embodiment 3, the number of first gates 12 is two, and the number of second gates 13 is also two. However, the number of first gates 12 and second gates 13 is not limited to this. It is sufficient that one or more first gates 12 and second gates 13 are provided.

[0060] According to the method for manufacturing the semiconductor device described above, the direction of deformation of the metal wire 3 during the filling process is uniform, moving from the side on which the first gate 12 is provided towards the side on which the second gate 13 is provided. Therefore, the metal wire 3 is easily corrected during the reflux process. <Ausführungsform 4>

[0061] Fig. Figure 13 is a diagram illustrating a process for manufacturing a semiconductor device 102 according to embodiment 4. The semiconductor device 102 comprises the semiconductor chip 1, the connection frame 2, the plurality of metal wires 3, and the sealing material 5.

[0062] The configurations of the semiconductor chip 1, the connection frame 2, and the plurality of metal wires 3 are identical to those according to embodiment 1.

[0063] The sealing material 5 according to embodiment 4 comprises a resin 5A as a first sealing material and a resin 5B as a second sealing material. The sealing material 5 has a first region 50A and a second region 50B. The first region 50A contains more of the first resin 5A than of the second resin 5B. The second region 50B contains more of the second resin 5B than of the first resin 5A. A third region 50C, in which the first resin 5A and the second resin 5B are mixed at substantially the same concentration, can be formed between the first region 50A and the second region 50B.

[0064] The second resin 5B exhibits different properties compared to the first resin 5A. The second resin 5B is less expensive than the first resin 5A, but inferior in terms of thermal conductivity and long-term reliability. The semiconductor device 102 is applied to a power semiconductor module and comprises a region requiring high thermal conductivity and a region not requiring high thermal conductivity. The region not requiring high thermal conductivity is sealed using the second resin 5B.

[0065] Fig. Figure 14 is a flowchart illustrating a method for manufacturing the semiconductor device 102 according to embodiment 4.

[0066] In step S21, an electrical circuit is arranged in cavity 11 of mold 30. The electrical circuit is configured such that the IGBT chip 1A, the IC chip 1B, the connection frame 2, and the metal wire 3 are electrically connected. In this step S21, the first resin 5A, which has a tablet-like shape, is placed in the first well 14 of mold 30. Similarly, the second resin 5B, which also has a tablet-like shape, is placed in the second well 15, that is, in the sealing material storage part of mold 30.

[0067] If a large quantity of the second resin 5B is placed in the second pot 15, the quantity of the first resin 5A injected from the cavity 11 into the second pot 15 decreases. Therefore, it is possible that the second resin 5B could interfere with the first resin 5A filling any gap between the connecting frame 2 and the mold. For this reason, the quantity of the second resin 5B placed in the second pot 15 is preferably as small as possible and less than the volume of the second pot 15. The quantity of the second resin 5B is adjusted according to cost considerations.

[0068] In step S22, the first resin 5A is injected in liquid form from the first gate 12 of the mold 10 to fill the cavity 11 and the second pot 15 with the first resin 5A. Here, the first resin 5A fills at least part of the cavity 11 and at least part of the second pot 15.

[0069] The first resin 5A in liquid form fills the gap in the cavity 11 during the filling process for the injection of resin 4A in step S22. In this injection process, the metal wire 3 is deformed by the flow of the first resin 5A. Fig. Figure 15 is a diagram illustrating the deformation of the metal wire 3 during the injection process. A distant end of the first resin 5A, injected from the first gate 12, is positioned such that the metal wire 3 is covered on its far left side. The first resin 5A flows from right to left, therefore the metal wire 3 is deformed in accordance with the flow.

[0070] The second resin 5B, which was placed in the second pot 15 in step S21, and the first resin 5A, which was injected from the first gate 12 to fill the second pot 15 in step S22, flow back into the cavity 11 via the second gate 13 in step S23.

[0071] During this backflow process in step S23, the deformation of the metal wire 3 is corrected by the flow of the first resin 5A and the second resin 5B, which are moved from the second gate 13 to the cavity 11, in a similar manner to embodiment 1. That is, in a top view, two or more curved parts 3a are formed in the elongated shape of the metal wire 3.

[0072] The first region 50A, which contains a lot of the first resin 5A, and the second region 50B, which contains a lot of the second resin 5B, are formed by this backflow process.

[0073] In step S24, the first resin 5A and the second resin 5B are cured.

[0074] In step S25, the first resin 5A and the second resin 5B, which have cured and extend from the first gate 12 or the second gate 13 towards the outer side of the cavity 11, are removed.

[0075] In summary, the above is the method for manufacturing the semiconductor device according to embodiment 4, the method for manufacturing the semiconductor device 102 in which the electrical circuit comprising the semiconductor chip 1 and the plurality of metal wires 3 which are electrically connected to the semiconductor chip 1 are sealed by means of the plurality of sealing materials 5.The method for manufacturing the semiconductor device 102 comprises the process of filling the cavity 11 and at least a part of the sealing material storage part (the second pot 15) by means of the first sealing material (the first resin 5A) by injecting the first sealing material from the first gate 12 of the mold 30, wherein the mold 30 has the cavity 11 in which the electrical circuit is arranged, the first gate 12 and the second gate 13 which are provided in the cavity 11, and the sealing material storage part which is provided to the outer side of the cavity 11 to be connected to the second gate 13.The manufacturing process includes the process to cause the second sealing material (second resin 5B), which previously filled the sealing material storage part and which has properties that differ from the first sealing material, and the first sealing material, which was injected from the first gate 12 to fill the sealing material storage part, to flow back into the cavity 11 via the second gate 13.

[0076] According to the method for manufacturing the semiconductor device 102, which has the configuration described above, the amount of the first resin 5A used is reduced, and a cost-effective second resin 5B is used. Therefore, manufacturing costs are reduced. The shape 10 described in embodiment 1 or the shape 20 described in embodiment 2 can be used for the method for manufacturing the semiconductor device 102 according to this embodiment 4. In this case, a similar effect to that of the respective embodiment can be achieved.

[0077] In the present disclosure, any embodiment can be combined arbitrarily, or any embodiment can be varied or omitted in a suitable manner.

[0078] The aspects of the present revelation are described together below as appendices. (Annex 1)

[0079] Method for manufacturing a semiconductor device in which an electrical circuit comprising a semiconductor chip and a plurality of metal wires electrically connected to the semiconductor chip is sealed by means of a sealing material, comprising the steps for: Filling a cavity and at least a part of a sealing material storage portion by means of the sealing material by injecting the sealing material from a first gate of a mold, wherein the mold comprises the cavity in which the electrical circuit is arranged, the first gate and a second gate which are provided in the cavity, and the sealing material storage portion which is provided to an outer side of the cavity to be connected to the second gate; and Causing the sealing material, which fills the sealing material storage part, to flow back into the cavity via the second gate. (Annex 2)

[0080] Method for manufacturing the semiconductor device according to Annex 1 further comprising the steps for: Curing of the sealing material after the sealing material has flowed back into the cavity via the second gate; and Removal of the sealant material that has hardened and extends from the first gate or the second gate towards the outer side of the cavity, wherein the step to cause the sealing material to flow back from the second gate into the cavity includes a step to exert a higher pressure on a plunger for injecting the sealing material from the second gate into the cavity than a pressure exerted on a first plunger for injecting the sealing material from the first gate into the cavity, and the sealing material is a resin. (Annex 3)

[0081] Method for manufacturing the semiconductor device according to Annex 1 or 2, wherein the second gate is arranged near a metal wire which extends in a direction which has a largest angle from a multitude of angles between a direction in which the sealing material is injected into the mold from the first gate and a direction in which the multitude of metal wires extends in a top view. (Annex 4)

[0082] Method for manufacturing the semiconductor device according to any one of Annexes 1 to 3, wherein The sealing material is injected from a direction perpendicular to the direction in which each of the multitude of metal wires extends. (Annex 5)

[0083] Method for manufacturing the semiconductor device according to any one of Annexes 1 to 4, wherein the step for causing the sealing material to flow back into the cavity via the second gate comprises a step for forming two or more curved parts in an elongated shape in a top view of at least one metal wire from a plurality of metal wires. (Annex 6)

[0084] Method for manufacturing a semiconductor device in which an electrical circuit comprising a semiconductor chip and a plurality of metal wires electrically connected to the semiconductor chip is sealed by means of a plurality of sealing materials, comprising the steps of: Filling a cavity of a sealing material storage part by means of a first sealing material by injecting the first sealing material from a first gate of a mold, wherein the mold comprises the cavity in which the electrical circuit is arranged, the first gate and a second gate which are provided in the cavity, and the sealing material storage part which is provided to an outer side of the cavity to be connected to the second gate; and Causing the second sealing material, which fills the sealing material storage part and has properties that differ from the first sealing material, and causing the first sealing material, which is injected from the first gate to fill the sealing material storage part, to flow back into the cavity via the second gate. (Annex 7)

[0085] Method for manufacturing the semiconductor device according to Annex 6, wherein the step to cause the second sealing material and the first sealing material to flow back into the cavity via the second gate, includes a step to form two or more curved parts in an elongated shape in a top view of at least one metal wire from the plurality of metal wires. (Annex 8)

[0086] comprising a semiconductor device: an electrical circuit comprising a semiconductor chip and a plurality of metal wires electrically connected to the semiconductor chip; and a sealing material that seals the electrical circuit, whereby at least one metal wire from the multitude of metal wires has two or more curved parts in an elongated shape when viewed from above. (Annex 9)

[0087] Semiconductor device according to Annex 8, wherein The sealing material has a rectangular shape in a top view and features a multitude of sealing material cutting marks provided on a first side and a second side facing the first side of the rectangular shape. (Annex 10)

[0088] Semiconductor device according to Annex 8 or 9, wherein the sealing material contains: a first sealing material; a second sealing material which has properties that differ from the first sealing material; a first region which has more of the first sealing material than the second sealing material; and a second region which has more of the second sealing material than the first sealing material.

[0089] While the invention has been shown and described in detail, the foregoing description is illustrative in all aspects and not limiting. It is therefore understood that numerous modifications and variations can be conceived without departing from the scope of protection of the invention.

Claims

[1] Method for manufacturing a semiconductor device (101) in which an electrical circuit comprising a semiconductor chip (1, 1A, 1B) and a plurality of metal wires (3) which are electrically connected to the semiconductor chip (1, 1A, 1B) is sealed by means of a sealing material (4), comprising the steps for: • Filling a cavity (11) and at least a part of a sealing material storage part (15) by means of the sealing material (4) by injecting the sealing material (4) from a first gate (12) of a mold (10, 20), wherein the mold (10, 20) comprises the cavity (11) in which the electrical circuit is arranged, the first gate (12) and a second gate (13) which are provided in the cavity (11), and the sealing material storage part (15) which is provided on an outer side of the cavity (11) to be connected to the second gate (13); and • Causing the sealing material (4), which fills the sealing material storage part (15), to flow back into the cavity (11) via the second gate (13). [2] Method for manufacturing the semiconductor device (101) according to claim 1 further comprising: • Curing of the sealing material (4) after the sealing material (4) has flowed back into the cavity (11) via the second gate (13); and • Removal of the sealing material (4) which has hardened and extends from the first gate (12) or the second gate (13) towards the outer side of the cavity (11), where • the step to cause the sealing material (4) to flow back from the second gate (13) into the cavity (11) comprises a step to exert a higher pressure on a second plunger (17) for injecting the sealing material (4) into the cavity (11) from the second gate (13) than a pressure exerted on a first plunger (16) for injecting the sealing material (4) into the cavity (11) from the first gate (12), and • the sealing material (4) is a resin. [3] Method for manufacturing the semiconductor device (101) according to claim 1 or 2, wherein the second gate (13) is arranged near a metal wire (31, 32) which extends in a direction having a largest angle from a plurality of angles between a direction in which the sealing material (4) is injected into the cavity (11) of the first gate (12) and a direction in which the plurality of metal wires (3) extends in a top view. [4] Method for manufacturing the semiconductor device (101) according to any one of claims 1 to 3, wherein the sealing material (4) is injected from a direction perpendicular to the direction in which each of the plurality of metal wires (3) extends. [5] Method for manufacturing the semiconductor device (101) according to any one of claims 1 to 4, wherein the step for causing the sealing material (4) to flow back into the cavity (11) via the second gate (13) comprises a step for forming two or more curved parts (3A) in an elongated shape in a top view of at least one metal wire (3) from the plurality of metal wires (3). [6] Method for manufacturing a semiconductor device (102) in which an electrical circuit comprising a semiconductor chip (1, 1A, 1B) and a plurality of metal wires (3) electrically connected to the semiconductor chip (1, 1A, 1B) is sealed by means of a plurality of sealing materials (4), comprising the steps of: • Filling a cavity (11) and part of a sealing material storage part (15) by means of a first sealing material (5A) by injecting the first sealing material (5A) from a first gate (12) of a mold (30), wherein the mold (30) comprises the cavity (11) in which the electrical circuit is arranged, the first gate (12) and a second gate (13) which are provided in the cavity (11), and the sealing material storage part (15) which is provided on an outer side of the cavity (11) to be connected to the second gate (13); and • Cause the second sealing material (5B), which fills the sealing material storage part (15) and which has properties that differ from the first sealing material (5A), and the first sealing material (5A), which is injected from the first gate (12) to fill the sealing material storage part (15), to flow back into the cavity (11) via the second gate (13). [7] Method for manufacturing the semiconductor device (102) according to claim 6, wherein the step to cause the second sealing material (5B) and the first sealing material (5A) to flow back into the cavity (11) via the second gate (13) comprises a step for forming two or more curved parts (3A) in a top view in an elongated shape of at least one metal wire (3) in the plurality of metal wires (3). [8] comprising a semiconductor device (101, 102): • an electrical circuit comprising a semiconductor chip (1, 1A, 1B) and a plurality of metal wires (3) which are electrically connected to the semiconductor chip (1, 1A, 1B); and • a sealing material (4) which seals the electrical circuit, wherein • at least one metal wire (3) from the plurality of metal wires (3) has two or more curved parts (3A) in an elongated shape in a top view. [9] Semiconductor device (101, 102) according to claim 8, wherein the sealing material (4) has a rectangular shape in a top view and has a plurality of sealing material cutting marks (40) provided on a first side (41) and a second side (42) which faces the first side (41) of the rectangular shape. [10] Semiconductor device (102) according to claim 8 or 9, wherein • the sealing material (4) has: • a first sealing material (5A); • a second sealing material (5B) which has properties that differ from the first sealing material (5A); • a first region (50A) which has more of the first sealing material (5A) than the second sealing material (5B); and • a second region (50B) which has more of the second sealing material (5B) than the first sealing material (5A).

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