Method for wafer fill factor increase and universal applicability of µLED base structures

Abstract

Method for producing a plurality of optoelectronic components comprising the steps: Producing a plurality of volume-emitting µLEDs, each having a first emission surface, on a wafer, which are arranged at a first distance from one another on the wafer, wherein the µLEDs comprise a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer; Transferring a subset of the µLEDs from the wafer to a temporary carrier such that at least two µLEDs of the subset of µLEDs are arranged on the temporary carrier at a second distance from one another that is greater than the first distance; Creating a structured dielectric material layer on the temporary carrier, which surrounds at least side surfaces of the subset of µLEDs in a contacting manner, and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1; and Creating a second contact structure on the structured dielectric material layer, wherein the second contact structure contacts the electrically conductive second contact layer of the µLEDs.

Description

[0001] The present invention relates to a method for producing a plurality of optoelectronic components, in particular encapsulated µ-LEDs, an intermediate product comprising a plurality of optoelectronic components, an optoelectronic component, an optoelectronic package comprising an optoelectronic component and an arrangement, in particular a display, comprising a plurality of optoelectronic components. BACKGROUND

[0002] µLEDs are optoelectronic components with lateral dimensions ranging from a few µm to approximately 40 µm. Such components offer a wide variety of applications, including, but not limited to, displays.

[0003] Different µLED applications require different µLED designs or architectures. For example, different µLED sizes (5, 10, 15, 30, 40, ... µm) may be advantageous for different applications or due to different further processing. Different µLED contact geometries may also be advantageous for different applications or due to different further processing. Examples of contact geometries include horizontal (both electrical contacts on one side of the µLED) and vertical (electrical contacts on opposite sides of the µLED). Furthermore, different µLED shapes may be desired for different applications or due to different further processing, for example, to achieve different far-field emission of the light emitted by the µLED.

[0004] These different applications have so far required individual adaptation of the µLEDs at wafer level, i.e. as part of the front-end processing of the µLEDs. This is often associated with a high level of complexity and high costs, since, depending on the application and design of the µLEDs, expensive semiconductor materials required to grow the µLEDs often have to be removed again in order to create contact structures, a desired shape or a desired distance between the µLEDs. In particular, this can lead to a relatively low wafer fill factor, i.e. the ratio between the wafer area and the resulting µLEDs can be relatively low. Furthermore, depending on the application and design of the µLEDs, e.g. at wafer level, long cycle times can result, since an individual product can lead to a high level of individual complexity in production.

[0005] There is therefore a need to provide an improved method for producing optoelectronic components and an improved optoelectronic component by means of which at least some of the problems mentioned can be overcome. SUMMARY OF THE INVENTION

[0006] This need is addressed by the subject matter of the independent patent claims. Further developments and embodiments of the proposed principle are specified in the subclaims.

[0007] To solve this problem, the inventors propose providing small (e.g., edge length of approximately 5 µm), standardized, unpackaged, vertically addressable, and volume-emitting µLED dies that can be manufactured densely packed at the wafer level. These standardized µLED dies are then further processed in a product-specific manner on another temporary intermediate carrier in a subsequent step and adapted according to the requirements of the final product with regard to shape, size, and contact structure / geometry. These adapted µLED dies or µLEDs can then, for example, be integrated into the final product by the customer.

[0008] Since the main effort in manufacturing µLEDs, for example, approximately 6-14 lithography layers for producing the µLED dies, can be standardized and a maximum wafer fill factor can be achieved, the costs and complexity of die manufacturing can be reduced to a minimum. Furthermore, specific adaptations can be implemented more easily based on a standardized and simple starting product. Furthermore, the required qualification processes for specific adaptations can be simplified because essential qualifications may already have been performed for the starting product, allowing for a faster market launch of a customized product.

[0009] Examples of product-specific customization can include: - Size adjustment by dielectric embedding of the µLED; - Combining several µLEDs (multicore µLED) for optimal adjustment of current density / luminance; - Adjustment of the contacting of the µLED (vertical or horizontal).

[0010] In particular, it may be desirable to adjust the size of the µLEDs in terms of their external dimensions, but not in terms of the volume of the semiconductor material used, in order to enable easier handling of the µLEDs while keeping the costs of the µLEDs as low as possible. For example, the size of a small, standardized and therefore inexpensively manufactured µLED can be artificially increased using a relatively inexpensive material in order to be able to provide the small, standardized and therefore inexpensively manufactured µLED for applications and, for example, assembly processes for which such a small size of the µLEDs would not necessarily be necessary or possible. One prerequisite that must be met, however, is that these small, standardized and therefore inexpensively manufactured µLEDs provide a luminance that is sufficient for the intended application compared to a larger LED.

[0011] According to a first aspect, a method for producing a plurality of optoelectronic components, in particular encapsulated µ-LEDs, is proposed. The method comprises the following steps: Producing a plurality of volume-emitting µLEDs, each having a first emission surface, on a wafer, which are arranged at a first distance from one another on the wafer, the µLEDs comprising: a semiconductor layer stack comprising at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region disposed between the first and second layers; an electrically conductive first contact layer on the first layer; and an electrically conductive second contact layer on the second layer;

[0012] Transferring a subset of the plurality of µLEDs from the wafer to a temporary carrier such that at least two µLEDs of the subset of µLEDs are arranged on the temporary carrier at a second distance from one another that is greater than the first distance;

[0013] Creating a structured dielectric material layer on the temporary carrier, which surrounds at least side surfaces of the subset of µLEDs in a contacting manner, and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1 or by at least a factor of 1.5;

[0014] Creating a structured second contact structure on the structured dielectric material layer, wherein the structured second contact structure contacts the electrically conductive second contact layer of the µLEDs.

[0015] The term "emission surface" can be understood in particular as the outer surfaces of a corresponding element, via which light is emitted during operation of the optoelectronic components. In the case of µLEDs in the form of, for example, cube- or cuboid-shaped elements, the first emission surface can be formed by at least 5 of the 6 existing outer surfaces of a µLED. The 6th outer surface, however, can be mirrored, for example, by a reflective contact layer. With regard to the structured dielectric material layer, the second emission surface can in particular also be formed by the outer surfaces of a contiguous region of the structured dielectric material layer, through which light generated by the µLED(s) is emitted outwards.

[0016] Instead of the term “emission surface,” the term “emission volume” can also be used. The emission volume can refer in particular to the volume of a body that is designed to emit light. A first emission volume can in particular refer to the µLEDs and to the volume of a µLED that is enclosed by the outer surfaces of the µLED. A second emission volume, on the other hand, can refer to contiguous regions of the structured dielectric material layer through which light generated by the µLED(s) is emitted outwards. In particular, the second emission volume can refer to the volume of a body that is enclosed by the outer surfaces of a contiguous region of the structured dielectric material layer.In terms of the issue volume, the second issue volume may be larger than the first issue volume, in particular by at least a factor of 1.1 or by at least a factor of 1.5.

[0017] A subset of µLEDs transferred from the wafer to the temporary carrier can be understood, in particular, as a true subset of the plurality of µLEDs, i.e., a number of µLEDs that is smaller than the number of the plurality of µLEDs. However, it is also possible for all of the plurality of µLEDs to be transferred to the temporary carrier, wherein the temporary carrier in such a case is larger than the wafer to enable at least two of the µLEDs to be arranged at a greater distance from one another on the temporary carrier than from the wafer.

[0018] The temporary support can, in particular, also be formed by a wafer on which the µLEDs, the structured dielectric material layer, the contact structure, and possibly other layers or elements are arranged or produced. The temporary support can, for example, be a support / wafer made of Si, SiO2, glass, sapphire, Ge, or GaAs.

[0019] In addition to touchingly surrounding side surfaces of the subset of µLEDs, the structured dielectric layer can also, at least in regions, touchingly cover an upper side of the µLEDs opposite the temporary carrier and / or an upper side of the µLEDs facing the temporary carrier.

[0020] The second distance at which at least two of the subset of µLEDs are arranged on the temporary carrier is greater than the first distance. In particular, the second distance is, for example, many times greater than the first distance. A many times greater distance can result in particular if, when lifting the subset of the plurality of µLEDs, for example, only every 2nd, 3rd, 4th, 5th or other multiple µLED is lifted from the wafer and placed accordingly on the temporary carrier. However, a many times greater distance can also result if the µLEDs of the subset of µLEDs are placed at a desired second distance from one another by appropriately moving a transfer tool.

[0021] The fact that at least two of the subset of µLEDs are arranged on the temporary carrier at a second distance can be understood to mean that all µLEDs of the subset of µLEDs are arranged on the temporary carrier at the second distance, but can also be understood to mean that some µLEDs of the subset of µLEDs are arranged on the temporary carrier at the second distance, and other µLEDs are arranged at a different distance or different distances from one another. In particular, some µLEDs can be arranged more closely to one another on the temporary carrier, for example at the first distance or at a different distance that is smaller than the second distance, and some µLEDs can be arranged at the second distance from one another on the temporary carrier.

[0022] The step of producing the structured dielectric material layer may, in particular, comprise structuring in the sense of at least partially exposing the electrically conductive second contact layers of the µLEDs from the dielectric material layer. Additionally or alternatively, the step of producing the structured dielectric material layer may comprise structuring the dielectric material layer into individual, separate regions, wherein at least one of the subsets of the µLEDs is assigned to each separate region.

[0023] The step of producing the structured second contact structure on the structured dielectric material layer can either take place after the step of at least partially exposing the electrically conductive second contact layers of the µLEDs from the dielectric material layer or can take place after the step of structuring the dielectric material layer into individual, separate regions.

[0024] Furthermore, the step of creating the structured dielectric material layer may comprise structuring in the sense of creating through-holes through the dielectric material layer. The step of creating the structured second contact structure on the structured dielectric material layer may then comprise creating through-contacts in the through-holes.

[0025] The step of producing the structured dielectric material layer may also comprise structuring in the sense of shaping the outer shape of the optoelectronic components. For example, the structured dielectric material layer may at least partially shape the outer surface(s) of the final optoelectronic components. The step of producing the structured dielectric material layer may accordingly comprise shaping, for example, beveled or rounded side surfaces of the optoelectronic components.

[0026] According to some aspects, the structured dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of µLEDs by at most 0.1. In particular, the material of the structured dielectric material layer and / or the material system from which the semiconductor layer stack of the plurality of µLEDs is made can be selected such that a refractive index difference of at most 0.1 results between the materials. The materials can, in particular, be refractive index-matched.

[0027] According to some aspects, the structured dielectric material layer projects beyond the µLEDs in a vertical direction perpendicular to the temporary carrier, in particular by at least 5% or at least 10% of the vertical extent of the µLEDs. In addition to this or alternatively, the structured dielectric material layer or regions of the structured dielectric material layer projects beyond the µLEDs in a lateral direction, in particular by at least 10% or at least 20% of the lateral extent of the µLEDs. In particular, the outer dimensions of the final optoelectronic components can be substantially defined by the structured dielectric material layer or regions of the structured dielectric material layer. In this case, the structured dielectric material layer orAreas of the structured dielectric material layer project beyond correspondingly assigned µLEDs in vertical and / or lateral direction in order to increase the size of the small µLEDs according to their area of ​​application and existing processing methods with a cheap material.

[0028] According to some aspects, the step of creating the structured dielectric material layer comprises creating regions of the structured dielectric material layer such that a contiguous region of the structured dielectric material layer is assigned to at least one of the plurality of µLEDs. The contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. For example, one or more µLEDs can be surrounded by a contiguous region of the structured dielectric material layer.

[0029] According to some aspects, the step of creating the structured dielectric material layer comprises at least partially exposing the electrically conductive second contact layers from the dielectric material layer.

[0030] According to some aspects, the step of producing the plurality of µLEDs comprises producing the semiconductor layer stack on a first support structure. The first support structure can be structured such that a support region of the first support structure is assigned to each of the plurality of µLEDs. Furthermore, in addition to the support regions, the first support structure can also comprise a first sacrificial layer that fills regions between the support regions of the first support structure. The first support structure can be provided, in particular, to enable / facilitate detachment / removal of the µLEDs from the wafer. The support regions can be formed by miniaturized pillars arranged between the µLEDs and the wafer. The first sacrificial layer, on the other hand, can be removable and removed in an etching step before the subset of µLEDs is transferred, so that the µLEDs are only in contact with the support regions.

[0031] According to some aspects, the step of transferring the subset of the plurality of µLEDs comprises placing the µLEDs on a second support structure. The second support structure can be structured such that at least one µLED of the subset of µLEDs is assigned a support region of the second support structure. Furthermore, in addition to the support regions, the second support structure can also comprise a second sacrificial layer that fills regions between the support regions of the second support structure. The second support structure can be provided in particular to enable / facilitate detachment / removal of the optoelectronic components from the temporary carrier. The support regions can be formed by miniaturized pillars that are arranged between the optoelectronic components and the temporary carrier.The second sacrificial layer, however, can be designed to be removable and can be removed in an etching step before the optoelectronic components are lifted off, so that the optoelectronic components are only in contact with the support areas.

[0032] According to some aspects, the method further comprises a step of providing a first contact structure on the temporary carrier or the second holder structure, wherein regions of the structured first contact structure each contact the electrically conductive first contact layer of at least one of the µLEDs. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic components for their operation.

[0033] According to some aspects, the step of producing the structured dielectric material layer and the step of producing the plurality of µLEDs take place in a front-end process, i.e., in particular, at the wafer level. The temporary carrier can, in particular, also be a wafer on which the structured dielectric material layer is produced. In particular, the step of producing the structured dielectric material layer and the step of producing the plurality of µLEDs can take place in the same production line, since the prerequisites required for the individual steps can be similar for both steps.

[0034] According to a further aspect, an intermediate product is proposed. The intermediate product can, in particular, be an intermediate product produced by a process according to at least some of the aforementioned aspects. Accordingly, the aspects already mentioned for the process can be applied to the intermediate product and vice versa.

[0035] The intermediate product comprises a plurality of volume-emitting µLEDs, each having a first emission surface, which are arranged spaced apart from one another on a support structure, in particular the second support structure, on a temporary carrier. The µLEDs each comprise a semiconductor layer stack consisting of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer.In addition, a structured dielectric material layer is provided, which surrounds at least side surfaces of the µLEDs in contact and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. A structured second contact structure is further arranged on the structured dielectric material layer, wherein the structured second contact structure contacts the electrically conductive second contact layer of the µLEDs.

[0036] According to some aspects, the structured dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of µLEDs by at most 0.1. In particular, the material of the structured dielectric material layer and / or the material system from which the semiconductor layer stack of the plurality of µLEDs is made can be selected such that a refractive index difference of at most 0.1 results between the materials. The materials can, in particular, be refractive index-matched.

[0037] According to some aspects, the structured dielectric material layer projects beyond the µLEDs in a vertical direction perpendicular to the temporary carrier, in particular by at least 5%, or by at least 10% of the vertical extent of the µLEDs. In addition to this or alternatively, the structured dielectric material layer or regions of the structured dielectric material layer projects beyond the µLEDs in a lateral direction, in particular by at least 10%, or by at least 20% of the lateral extent of the µLEDs. In particular, the outer dimensions of the structured dielectric material layer or regions of the structured dielectric material layer can essentially define the size of final optoelectronic components. In this case, the structured dielectric material layer orAreas of the structured dielectric material layer project beyond correspondingly assigned µLEDs in vertical and / or lateral direction in order to increase the size of the small µLEDs according to their area of ​​application and existing processing methods with a cheap material.

[0038] According to some aspects, the structured dielectric material layer comprises regions, each of which is assigned a contiguous region of the structured dielectric material layer to at least one of the plurality of µLEDs. The contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. For example, one or more µLEDs can be surrounded by a contiguous region of the structured dielectric material layer.

[0039] According to some aspects, the holding structure or second holding structure is structured such that a support region of the second holding structure is assigned to at least one µLED of the subset of µLEDs. Furthermore, in addition to the support regions, the second holding structure can also comprise a sacrificial layer or second sacrificial layer that fills regions between the support regions of the second holding structure. The second holding structure can be provided, in particular, to enable / facilitate a detachment / removal of final optoelectronic components of the intermediate product from the temporary carrier. The support regions can be formed by miniaturized pillars arranged between the optoelectronic components and the temporary carrier.The second sacrificial layer, however, can be designed to be removable and can be removed in an etching step before the optoelectronic components are lifted off, so that the optoelectronic components are only in contact with the support areas.

[0040] According to some aspects, the intermediate product further comprises a first contact structure arranged on the temporary carrier and / or on the second holder structure, wherein regions of the structured first contact structure each contact the electrically conductive first contact layer of at least one of the µLEDs. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic components or µLEDs for their operation.

[0041] According to some aspects, a contiguous region of the structured dielectric material layer is formed, which surrounds at least the side surfaces of at least two µLEDs in a contacting manner. The at least one contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.5. The at least two µLEDs assigned to a contiguous region of the structured dielectric material layer can be connected in parallel by means of regions of the structured first and / or second contact structure, and thus can be controlled in parallel.Furthermore, the at least two µLEDs assigned to a contiguous region of the structured dielectric material layer can be arranged on the temporary carrier at a closer distance from one another than neighboring µLEDs assigned to different contiguous regions of the structured dielectric material layer. In particular, µLEDs assigned to a final optoelectronic component can be spaced more closely from one another and surrounded by a contiguous region of the structured dielectric material layer than neighboring µLEDs of different optoelectronic components.This can be particularly advantageous in order to provide at least partially optoelectronic components with an increased luminance, while maintaining the basic concept of the invention, namely to individually adapt the size, shape and / or contacting of the optoelectronic components by means of favorable materials and processes.

[0042] According to a further aspect, an optoelectronic component is proposed. The optoelectronic component can, in particular, be an optoelectronic component produced by a method according to at least some of the aforementioned aspects, or a part of the intermediate product according to at least some of the aforementioned aspects. Accordingly, the aspects already mentioned for the method and the intermediate product can be applied to the optoelectronic component and vice versa.

[0043] An optoelectronic component, in particular an encapsulated µ-LED, comprises at least one volume-emitting µLED with a first emission surface. The at least one µLED comprises a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer. The optoelectronic component further comprises a dielectric material layer that touchingly surrounds at least side surfaces of the at least one µLED and has a second emission surface for light emitted from the first emission surface, wherein the second emission surface is at least a factor of 1.1, in particular at least a factor of 1.5 is larger than the first emission surface, and the optoelectronic component comprises a second contact structure on the dielectric material layer, which contacts the electrically conductive second contact layer of the at least one µLED.

[0044] According to some aspects, the dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the at least one µLED by at most 0.1. In particular, the material of the dielectric material layer and / or the material system from which the semiconductor layer stack of the µLED is formed can be selected such that a refractive index difference of at most 0.1 results between the materials. The materials can, in particular, be refractive index-matched.

[0045] According to some aspects, the dielectric material layer projects beyond the at least one µLED in a vertical direction, in particular by at least 5% or by at least 10% of the vertical extent of the µLED. Additionally or alternatively, the dielectric material layer projects beyond the µLED in a lateral direction, in particular by at least 10% or by at least 20% of the lateral extent of the µLED. In particular, the outer dimensions of the dielectric material layer can essentially define the size of the optoelectronic component. In this case, the dielectric material layer can project beyond the at least one µLED in the vertical and / or lateral direction in order to increase the size of the small µLED according to its area of ​​application and the processing processes available for it using a favorable material.

[0046] According to some aspects, the optoelectronic component further comprises a first contact structure arranged on a side of the dielectric material layer opposite the second contact structure and contacting the electrically conductive first contact layer of the at least one µLED. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic component and the µLED, respectively, for their operation.

[0047] According to some aspects, the dielectric material layer is configured to contactingly surround at least the side surfaces of at least two µLEDs. The at least two µLEDs can be connected in parallel using regions of the first and / or second contact structure, and thus be controllable in parallel.

[0048] According to some aspects, the second contact structure has a through-contact through the dielectric material layer, such that the second contact structure can be electrically contacted from a side of the dielectric material layer opposite the second contact structure. This makes it possible to provide an optoelectronic component that can be controlled from only one side according to a flip-chip, although the µLED(s) themselves can be controlled vertically.

[0049] According to a further aspect, an optoelectronic package is proposed. The optoelectronic package comprises a first carrier substrate with at least one first contact pad, and at least one optoelectronic component according to some of the aspects already mentioned, which is arranged on the first carrier substrate. The electrically conductive first contact layer of the at least one optoelectronic component is electrically coupled to the at least one first contact pad on the carrier substrate. The package also comprises a frame that is arranged on the first carrier substrate and surrounds the at least one optoelectronic component in the lateral direction.

[0050] According to some aspects, an inner wall of the frame facing the at least one optoelectronic component and / or an upper side of the first carrier substrate facing the at least one optoelectronic component is designed to be reflective, so that a desired emission or detection behavior can be achieved by means of the optoelectronic package.

[0051] According to some aspects, at least one second contact pad is further formed on the first carrier substrate, wherein the second contact structure of the at least one optoelectronic component is electrically coupled to the at least one second contact pad. This can be achieved either by means of, for example, a lithographically produced contact bridge or by the at least one optoelectronic component being formed as a flip chip and arranged on the first and second contact pads.

[0052] The term "package" can be understood, in particular, as an assembly that includes at least one optoelectronic component according to some of the aspects already mentioned. Depending on the application area, however, the assembly can be designed differently according to the existing requirements. It should therefore be understood that the optoelectronic package is not limited to the described designs, but can be further developed according to known packages.

[0053] According to a further aspect, an optoelectronic arrangement, in particular a display, is proposed. The arrangement comprises a second carrier substrate and a plurality of optoelectronic components arranged in rows and columns according to some of the aforementioned aspects and / or a plurality of optoelectronic packages arranged in rows and columns according to some of the aforementioned aspects.

[0054] In each case, at least one optoelectronic component or optoelectronic package defines a virtual pixel on the second carrier substrate, wherein, in particular, at most 50% or at most 10% of the area of ​​each virtual pixel is covered by the at least one optoelectronic component or optoelectronic package, or wherein at most 10% or at most 1% of the area of ​​each virtual pixel is covered by a µLED of the at least one optoelectronic component or optoelectronic package. The fill factor of pixel size compared to the size of the µLEDs can accordingly be very small.

[0055] Due to such a small fill factor of pixel size compared to the size of the µLEDs, it can be particularly advantageous to provide optoelectronic components or optoelectronic packages that increase the external dimensions of the µLEDs in order to facilitate easier handling of the µLEDs during assembly of the optoelectronic arrangement.

[0056] The term "arrangement" can be understood, in particular, to mean a product comprising a plurality of optoelectronic components arranged in rows and columns according to some of the aspects already mentioned and / or a plurality of optoelectronic packages arranged in rows and columns according to some of the aspects already mentioned. Depending on the field of application, however, the product can be designed differently according to the existing requirements. It should therefore be understood that the optoelectronic arrangement is not limited to the described embodiments, but can be developed in accordance with known optoelectronic arrangements such as displays, digital displays, video walls, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples which will be described in detail in conjunction with the accompanying drawings. Fig. 1A to 1G show steps of a method for manufacturing optoelectronic components according to some aspects of the proposed principle; Fig. 1H and Fig. 1I show steps of a method for manufacturing an optoelectronic device according to some aspects of the proposed principle; Fig. 2A to 2D show further steps of a method for manufacturing optoelectronic components according to some aspects of the proposed principle; Fig. 3A to 3E show steps of a further method for manufacturing optoelectronic components according to some aspects of the proposed principle; Fig. 4A to 4D show steps of a further method for manufacturing optoelectronic components according to some aspects of the proposed principle; Fig. 5A to 5D show steps of another method for manufacturing optoelectronic components according to some aspects of the proposed principle; Fig. 6A to 6C show embodiments of an optoelectronic package according to some aspects of the proposed principle; and Fig. Figure 7 shows an optoelectronic device according to some aspects of the proposed principle. DETAILED DESCRIPTION

[0058] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements may be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be easily combined with one another without compromising the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice, slight deviations from the ideal shape may occur without, however, contradicting the inventive idea.

[0059] Furthermore, the individual figures, features, and aspects are not necessarily depicted in the correct size, nor are the proportions between the individual elements necessarily accurate. Some aspects and features are emphasized by being enlarged. However, terms such as "top," "above," "below," "below," "larger," "smaller," and the like are correctly depicted in relation to the elements in the figures. This makes it possible to infer such relationships between the elements from the illustrations.

[0060] The Fig. 1A to 1G show steps of a method for manufacturing optoelectronic components 1 according to some aspects of the proposed principle. A first step comprises, as shown in Fig. 1A, a generation of a plurality of volume-emitting µLEDs 2, which are arranged at a first distance d1, in particular as close a distance as possible, from one another on a wafer 4 or on a holding structure 11a arranged on the wafer 4.

[0061] The µLEDs 2 each comprise a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers.

[0062] In addition, the µLEDs 2 each comprise an electrically conductive first contact layer 5a on the first layer and an electrically conductive second contact layer 5b on the second layer.

[0063] The first support structure 11a comprises a plurality of support regions 12a, each of which is assigned to a µLED 2 and holds the µLED 2 in position. Regions between the support regions 12a may have been filled at a previous time with a first sacrificial layer (not shown), which may have been removed to remove the µLEDs 2.

[0064] The µLEDs 2 each have a first emission surface 3a, which in the present case is formed by the outer surfaces of the µLEDs 2 that are not covered by the electrically conductive first contact layer 5a. As in Fig. 1A, the emission surface 3a in this case is formed by the side surfaces 8 of the µLEDs and by the top surface of the µLEDs 2, which faces the electrically conductive first contact layer 5a. The emission surface 3a is the surface of the µLEDs 2 through which the µLEDs 2 emit light during their intended use.

[0065] The Fig. 1B to 1D show possible steps for transferring a subset of the µLEDs 2 from the wafer 4 to a temporary carrier 6 using a first transfer stamp 22a. Accordingly, one possibility for transferring a subset of the µLEDs 2 from the wafer 4 to a temporary carrier 6 is to lift a subset of the µLEDs 2 from the wafer 4 and transfer them to the temporary carrier 6 or a second holding structure 11b arranged on the temporary carrier 6 using the first transfer stamp 22a. This is done such that the µLEDs 2 are arranged on the temporary carrier 6 at a second distance d2 from one another that is greater than the first distance d1. In the illustrated case, the second distance corresponds to three times the first distance d1, but it is also possible for the second distance to be greater or smaller and not equal to a multiple of the first distance.

[0066] The Fig. Figure 1E shows in abstract form a step of processing the µLEDs 2 on the temporary carrier 6 such that an intermediate product 10 with a plurality of optoelectronic components 1 is ultimately obtained on the temporary carrier 6. Details of the processing steps that are carried out during the Fig. 1E shown step will be discussed in more detail below.

[0067] The Fig. 1F to 1I show possible steps of transferring the processed optoelectronic components 1 from the temporary carrier 6 by means of a second transfer stamp 22b to a second carrier substrate 15b, in particular a backplane of an optoelectronic arrangement or a display 100. In the illustrated case, the optoelectronic components 1 are transferred from the temporary carrier 6 by means of the second transfer stamp 22b at the same distance to the second carrier substrate 15b, but it is also possible for the optoelectronic components 1 to be arranged on the second carrier substrate 15b at a greater distance according to, for example, a pixel pitch of the display 100.For example, three optoelectronic components 1 designed to emit red, green and blue light can be arranged very close to one another on the second carrier substrate 15b, and three further such optoelectronic components 1 can be arranged further away from the three first-mentioned optoelectronic components 1 according to the pixel pitch.

[0068] The Fig. 2A to 2D show an embodiment of possible steps of processing the µLEDs 2. The µLEDs 2 are transferred to a second support structure 11b at a second distance d2, wherein the support structure 11b comprises support regions 12b, each of which is assigned to a µLED 2. A sacrificial layer 13b is formed between the support regions 12b, which together with the support regions 12b forms a planar surface.

[0069] The µLEDs 2 are then, as in Fig. 2B, encased by a dielectric material layer 7. This occurs such that the µLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1, and the dielectric material layer 7 touchingly surrounds at least side surfaces 8 of the µLEDs 2. In the illustrated case, the µLEDs 2 are completely encased in a first step, so that the dielectric material layer 7 also projects beyond the µLEDs 2 in the vertical direction v. The encapsulation step can be performed, for example, by sputtering, dispensing, or deposition.

[0070] Fig. 2C now shows several examples of a possible structuring of the dielectric material layer 7, resulting in a structured dielectric material layer 7 with connected regions 7a, 7b, each of which is assigned to at least one of the µLEDs 2. According to Fig. 2C, the structured dielectric material layer 7 can be flush with the µLEDs in the vertical direction v, or it can protrude beyond the µLEDs in the vertical direction v. In the latter case, a contact structure 9b can be formed on the regions of the structured dielectric material layer 7, which electrically contacts the electrical second contact layer 5b. In addition, the structured dielectric material layer 7, or regions of the structured dielectric material layer 7, can have beveled, rounded, or other types of side surfaces.

[0071] The Fig. 2C have in common that the structured dielectric material layer 7 or the regions of the structured dielectric material layer 7 have a second emission surface 3b for light emitted by the first emission surface 3a, wherein the second emission surface 3b is larger than the first emission surface 3a, in particular by at least a factor of 1.1 or 1.5. Thanks to the structured dielectric material layer 7 or the regions of the structured dielectric material layer 7, the volume of the small µLEDs 2 can be increased in order to obtain a larger emission surface, on the one hand, and to facilitate processing, further processing and / or assembly of the µLEDs 2, on the other hand. This is done using more cost-effective materials compared to more expensive half-elite materials, which would be consumed directly on the first wafer during corresponding processing.

[0072] In order to be able to detach the optoelectronic components 1 from the temporary carrier, as in Fig. 2D, the second sacrificial layer 13b is removed, and the optoelectronic components 1 are only still resting on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application.

[0073] The Fig. 3A to 3E show a further embodiment of possible steps of processing the µLEDs 2. The µLEDs 2 are transferred to a second support structure 11b at a second distance d2, wherein the support structure 11b comprises support regions 12b, each of which is assigned to a plurality of µLEDs 2. A sacrificial layer 13b is formed between the support regions 12b, which together with the support regions 12b forms a planar surface.

[0074] In particular, the Fig. 3A to 3E show an embodiment of steps of a method for producing optoelectronic components 1, in which the optoelectronic components 1 each comprise a plurality of µLEDs 2. The µLEDs 2 are placed on an associated support region on a common first contact structure 9a and then encased by a dielectric material layer 7. This is done in such a way that the µLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1 and the dielectric material layer 7 touchingly surrounds at least side surfaces 8 of the µLEDs 2. In the case shown, the µLEDs 2 are completely encased in a first step, so that the dielectric material layer 7 also projects beyond the µLEDs 2 in the vertical direction v. The encapsulation step can be carried out, for example, by sputtering, dispensing, or deposition.

[0075] Then, as described in the Fig. 3C to 3D, a structuring of the dielectric material layer 7 results, resulting in a structured dielectric material layer 7 with connected regions, each of which is assigned to at least two of the µLEDs 2. A contact structure 9b is formed on the regions of the structured dielectric material layer 7, which contact structure electrically contacts the electrical second contact layer 5b of the µLEDs 2. In addition, the structured dielectric material layer 7 or regions of the structured dielectric material layer 7 can have beveled, rounded, or other types of side surfaces. Pre-structuring in order to expose the electrical second contact layers 5b of the µLEDs 2 and to be able to provide the contact structure 9b can also be carried out before structuring into the connected region 7a.

[0076] According to Fig. 3E, the second sacrificial layer 13b is subsequently removed, and the optoelectronic components 1 remain only on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application. The µLEDs 2 per optoelectronic component 1 are connected in particular in parallel to one another and can either be configured redundantly to one another or increase the light output of the optoelectronic component 1.

[0077] The Fig. 4A to 4D and 5A to 5D show a further embodiment of possible steps for processing the µLEDs 2. The µLEDs 2 are transferred to a second holding structure 11b at a second distance d2, wherein the holding structure 11b comprises support regions 12b, each of which is assigned to a plurality of µLEDs 2. A sacrificial layer 13b is formed between the support regions 12b, which, together with the support regions 12b, forms a planar surface. Regions of a first and second contact structure 9a, 9b are also already arranged on the holding structure, wherein the µLEDs 2 are arranged on regions of the first contact structure 9a and are electrically connected to them. The regions of the first and second contact structure 9a, 9b serve to provide optoelectronic components in a flip-chip configuration.

[0078] For this purpose, the µLEDs 2 are encased by a dielectric material layer 7. This is done in such a way that the µLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1 and the dielectric material layer 7 touchingly surrounds at least side surfaces 8 of the µLEDs 2. The dielectric material layer 7 is then structured to produce a structured dielectric material layer 7 with contiguous regions, each of which is assigned to at least one of the µLEDs 2. On the regions of the structured dielectric material layer 7, as in Fig. 4C and Fig. 5C, a further part of the second contact structure 9b is formed, which electrically contacts the electrical second contact layer 5b of the µLEDs 2 and forms vias 14 through the dielectric material layer 7, which are connected to the first part of the second contact structure 9b.

[0079] According to Fig. 4D and Fig. 5D, the second sacrificial layer 13b is subsequently removed, and the optoelectronic components 1 remain only on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application. The optoelectronic components 1 are in a flip-chip configuration, so that they can be electrically connected from only one side of the components.

[0080] Fig. 6A to 6C show embodiments of an optoelectronic package 20 according to some aspects of the proposed principle. The packages 20 each comprise a first carrier substrate 15a with at least one first and one second contact pad 16a, 16b, wherein an optoelectronic component 1 according to some of the aforementioned aspects is arranged on the first contact pad in each case, such that the electrically conductive first contact layer 5a is electrically coupled to the first contact pad 16a. In the illustrated cases, the optoelectronic components 1 are in particular the Fig. 2D, Fig. 3E and Fig. 4D. A frame 17 is also arranged on the first carrier substrate 15a, which frame surrounds the optoelectronic components 1 in the lateral direction 1.

[0081] In the Fig. 6A and Fig. 6B, the second contact structure 9b is connected to the second contact pad 16b by means of a lithographically produced contact bridge, whereas in Fig. 6C, the optoelectronic component 1 is designed as a flip-chip and is arranged directly on the first and second contact pads 16a, 16b. The representation of the contact bridge in the Fig. 6A and Fig. 6B is to be understood as merely exemplary and of a functional nature.

[0082] The inner wall 18 of the frame 17 facing the optoelectronic component 1 and the upper side 19 of the first carrier substrate 15a facing the optoelectronic component 1 can, for example, be reflective. This can, for example, increase the efficiency of the package and improve the beam guidance of the package.

[0083] However, the packages shown are to be understood as examples only, and other configurations of a package comprising one or more optoelectronic components are also conceivable.

[0084] Fig.7 shows an optoelectronic arrangement or display 100 according to some aspects of the proposed principle. The display comprises a second carrier substrate and a plurality of optoelectronic components 1 arranged in rows and columns according to some of the aforementioned aspects. At least one of the optoelectronic components 1 defines a virtual pixel 21 on the second carrier substrate. The optoelectronic components 1 are dimensioned such that at most 50% or at most 10% of the area of ​​each virtual pixel 21 is covered by an optoelectronic component 1, or that at most 10% or at most 1% of the area of ​​each virtual pixel 21 is covered by a µLED 2 of an optoelectronic component. LIST OF REFERENCE SYMBOLS 1 optoelectronic component 2 µLED 3a, 3b Emission area 4 wafers 5a, 5b Contact layer 6 temporary supports 7 dielectric material layer 7a, 7b area 8 side surface 9a, 9b Contact structure 10 Intermediate product 11a, 11b Support structure 12a, 12b support area 13a, 13b sacrificial layer 14 vias 15a, 15b Carrier substrate 16a, 16b contact pad 17 frames 18 Interior wall 19 Top 20 optoelectronic package 21 virtual pixels 22a, 22b stamp 100 optoelectronic arrangement d1, d2 distance v vertical direction l lateral direction

Claims

[1] Method for producing a plurality of optoelectronic components (1), in particular encapsulated µ-LEDs, comprising the steps: Producing a plurality of volume-emitting µLEDs (2) each having a first emission surface (3a) on a wafer (4), which are arranged at a first distance (d1) from one another on the wafer (4), wherein the µLEDs (2) comprise: a semiconductor layer stack comprising at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region disposed between the first and second layers; an electrically conductive first contact layer (5a) on the first layer; and an electrically conductive second contact layer (5b) on the second layer; Transferring a subset of the plurality of µLEDs (2) from the wafer (4) to a temporary carrier (6) such that at least two µLEDs (2) of the subset of µLEDs are arranged on the temporary carrier (6) at a second distance (d2) from one another that is greater than the first distance (d1); Creating a structured dielectric material layer (7) on the temporary carrier (6), which surrounds at least side surfaces (8) of the subset of µLEDs (2) in a contacting manner, and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is larger than the first emission surface (3a), in particular by at least a factor of 1.1; Creating a structured second contact structure (9b) on the structured dielectric material layer (7), wherein the structured second contact structure (9b) contacts the electrically conductive second contact layer (5b) of the µLEDs (2). [2] The method according to claim 1, wherein the structured dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of µLEDs (2) by at most 0.

1. [3] Method according to claim 1 or 2, wherein the structured dielectric material layer (7) projects beyond the µLEDs (2) in a vertical direction (v) perpendicular to the temporary carrier (6), in particular by at least 5% or by at least 10% of the vertical extent of the µLEDs (2); and / or wherein the structured dielectric material layer (7) projects beyond the µLEDs (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the µLEDs (2). [4] Method according to one of the preceding claims, wherein the step of producing the structured dielectric material layer (7) comprises producing regions (7a, 7b) of the structured dielectric material layer (7) such that a contiguous region (7a, 7b) of the structured dielectric material layer (7) is assigned to at least one of the plurality of µLEDs (2), wherein the contiguous region (7a, 7b) has a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular larger by at least a factor of 1.

1. [5] Method according to one of the preceding claims, wherein the step of producing the structured dielectric material layer (7) comprises at least partially exposing the electrically conductive second contact layers (5b) from the dielectric material layer (7). [6] Method according to one of the preceding claims, wherein the step of producing the plurality of µLEDs (2) comprises producing the semiconductor layer stack on a first support structure (11a). [7] Method according to claim 6, wherein the first holding structure (11a) is structured such that a support region (12a) of the first holding structure (11a) is assigned to each of the plurality of µLEDs (2), and wherein regions between the support regions (12a) of the first holding structure (11a) are filled with a first sacrificial layer (13a). [8] Method according to one of the preceding claims, wherein the step of transferring the subset of the plurality of µLEDs (2) comprises placing the µLEDs (2) on a second support structure (11b). [9] Method according to claim 8, wherein the second holding structure (11b) is structured such that at least one µLED (2) of the subset of µLEDs (2) is assigned a support region (12b) of the second holding structure (11b), and wherein regions between the support regions (12b) of the second holding structure (11b) are filled with a second sacrificial layer (13b). [10] Method according to one of the preceding claims, further comprising a step of providing a first contact structure (9a) on the temporary carrier (6) or the second holder structure (11b), wherein regions of the structured first contact structure (9a) each contact the electrically conductive first contact layer (5a) of at least one of the µLEDs (2). [11] Method according to one of the preceding claims, wherein the step of producing the structured dielectric material layer (7) and the step of producing the plurality of µLEDs (2) are performed at wafer level. [12] Intermediate product (10) comprising: a plurality of volume-emitting µLEDs (2), each having a first emission surface (3a), which are arranged at a distance from one another on a holding structure (11b) on a temporary carrier (6), wherein the µLEDs (2) comprise: a semiconductor layer stack comprising at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region disposed between the first and second layers; an electrically conductive first contact layer (5a) on the first layer; and an electrically conductive second contact layer (5b) on the second layer; a structured dielectric material layer (7) which surrounds at least side surfaces (8) of the µLEDs (2) in contact, and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is larger than the first emission surface (3a), in particular by at least a factor of 1.1; and a structured second contact structure (9b) on the structured dielectric material layer (7), wherein the structured second contact structure (9b) contacts the electrically conductive second contact layer (5b) of the µLEDs (2). [13] Intermediate product according to claim 12, wherein the structured dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of µLEDs (2) by at most 0.

1. [14] Intermediate product according to claim 12 or 13, wherein the structured dielectric material layer (7) projects beyond the µLEDs (2) in a vertical direction (v) perpendicular to the temporary carrier (6), in particular by at least 5% or by at least 10% of the vertical extent of the µLEDs (2); and / or wherein the structured dielectric material layer (7) projects beyond the µLEDs (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the µLEDs (2). [15] Intermediate product according to one of claims 12 to 14, wherein the structured dielectric material layer (7) has contiguous regions (7a, 7b) which are each assigned to at least one of the plurality of µLEDs (2), wherein the contiguous regions (7a, 7b) each have a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular larger by at least a factor of 1.

1. [16] Intermediate product according to one of claims 12 to 15, wherein the holding structure (11b) is structured such that a support region (12b) of the holding structure (11b) is assigned to at least one µLED (2) of the plurality of µLEDs, and wherein regions between the support regions (12b) of the holding structure (11b) are filled with a sacrificial layer (13b). [17] Intermediate product according to one of claims 12 to 16, further comprising a structured first contact structure (9a) arranged on the temporary carrier (6) and / or the holder structure (11b), wherein regions of the structured first contact structure (9a) each contact the electrically conductive first contact layer (5a) of at least one of the µLEDs (2). [18] Intermediate product according to one of claims 12 to 17, wherein at least one contiguous region (7a) of the structured dielectric material layer (7) touchingly surrounds at least the side surfaces (8) of at least two µLEDs (2), and wherein the at least one contiguous region (7a) has a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular by at least a factor of 1.5, and wherein optionally the at least two µLEDs (2) which are assigned to a contiguous region (7a) of the structured dielectric material layer (7) are connected in parallel by means of regions of the structured first and / or second contact structure (9a, 9b). [19] Intermediate product according to claim 18, wherein the at least two µLEDs (2) assigned to a contiguous region of the structured dielectric material layer (7) are arranged more closely spaced from one another on the temporary carrier (6) than adjacent µLEDs (2) assigned to different contiguous regions of the structured dielectric material layer (7). [20] Optoelectronic component (1), in particular encapsulated µ-LED, comprising: At least one volume-emitting µLED (2) having a first emission surface (3a) comprising: a semiconductor layer stack comprising at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region disposed between the first and second layers; an electrically conductive first contact layer (5a) on the first layer; and an electrically conductive second contact layer (5b) on the second layer; a dielectric material layer (7) which surrounds at least side surfaces (8) of the at least one µLED (2) in a contacting manner and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is at least a factor of 1.1 larger than the first emission surface (3a); and a second contact structure (9b) on the dielectric material layer (7), which contacts the electrically conductive second contact layer (5b) of the at least one µLED (2). [21] Optoelectronic component according to claim 20, wherein the dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the at least one µLED (2) by at most 0.

1. [22] Optoelectronic component according to claim 20 or 21, wherein the dielectric material layer (7) projects beyond the at least one µLED (2) in a vertical direction (v), in particular by at least 5% or by at least 10% of the vertical extent of the at least one µLED (2); and / or wherein the dielectric material layer (7) projects beyond the at least one µLED (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the at least one µLED (2). [23] Optoelectronic component according to one of claims 20 to 22, further comprising a first contact structure (9a) which is arranged on a side of the dielectric material layer (7) opposite the second contact structure (9b) and contacts the electrically conductive first contact layer (5a) of the at least one µLED (2). [24] Optoelectronic component according to one of claims 20 to 23, wherein the second contact structure (9b) has a through-contact (14) through the dielectric material layer (7), such that the second contact structure (9b) can be electrically contacted from a side of the dielectric material layer (7) opposite the second contact structure (9b). [25] Optoelectronic component according to one of claims 20 to 24, wherein the dielectric material layer (7) surrounds at least the side surfaces (8) of at least two µLEDs (2) in a contacting manner, and wherein optionally the at least two µLEDs (2) are connected in parallel by means of the first and / or second contact structure (9a, 9b). [26] Optoelectronic package (20) comprising: a first carrier substrate (15a) with at least one first contact pad (16a); at least one optoelectronic component (1) according to one of claims 20 to 25, which is arranged on the first carrier substrate (15), wherein the electrically conductive first contact layer (5a) of the at least one optoelectronic component (1) is electrically coupled to the at least one first contact pad (16a); and a frame (17) which is arranged on the first carrier substrate (15a) and surrounds the at least one optoelectronic component (1) in the lateral direction (1). [27] Optoelectronic package according to claim 26, wherein an inner wall (18) of the frame (17) facing the at least one optoelectronic component (1) and / or an upper side (19) of the first carrier substrate (15a) facing the at least one optoelectronic component (1) is designed to be reflective. [28] Optoelectronic package according to claim 26 or 27, wherein at least one second contact pad (16b) is further formed on the first carrier substrate (15a) and the second contact structure (9b) of the at least one optoelectronic component (1) is electrically coupled to the at least one second contact pad (16b). [29] Optoelectronic arrangement (100), in particular a display, comprising a second carrier substrate (15b) and a plurality of optoelectronic components (1) arranged in rows and columns according to one of claims 20 to 25 or optoelectronic package (20) according to one of claims 26 to 28, wherein at least one optoelectronic component (1) or optoelectronic package (20) defines a virtual pixel (21) on the second carrier substrate (15b), and wherein at most 10% of the area of ​​each virtual pixel (21) is covered by the at least one optoelectronic component (1) or optoelectronic package (20), or wherein at most 1% of the area of ​​each virtual pixel (21) is covered by a µLED (2) of the at least one optoelectronic component (1) or of the optoelectronic package (20).

Images