Radiation-emitting component

Abstract

A radiation-emitting component comprises a carrier, a radiation-emitting semiconductor chip, a radiation-transmissive cover element, and a radiation-transmissive bridging material. The semiconductor chip is arranged on the carrier. The cover element is arranged on the carrier. A fastening connection is established between the cover element and the carrier. The semiconductor chip has an emission side for radiation emission. The cover element has an input side for radiation input. The emission side of the semiconductor chip and the input side of the cover element are opposite one another and separated by a gap.The bridging material is present at least in the region of the intermediate space and adjoins the emission side of the semiconductor chip and the coupling side of the cover element, so that a radiation-conducting connection between the semiconductor chip and the cover element is established via the bridging material, separate from the fastening connection between the cover element and the carrier.

Description

The present invention relates to a radiation-emitting component and a method for producing a radiation-emitting component.A radiation-emitting component can have a radiation-emitting semiconductor chip for generating electromagnetic radiation or light radiation. The semiconductor chip may be an LED (light-emitting diode) chip. The semiconductor chip may be configured to generate UV radiation (ultraviolet radiation) such as short-wave UVC radiation, and thereby be a UVC LED chip.In the case of a UVC LED chip, the generation of radiation can take place with a low efficiency. For a component with such a semiconductor chip, it is therefore desirable to achieve a high extraction efficiency and to minimize the possibilities for reabsorption. For this purpose, a design can be considered in which a cover element in the form of a lens is arranged downstream of the semiconductor chip. Fixing the lens on the semiconductor chip with an adhesive made of a polymer or silicone material, as is common practice, for example, in a semiconductor chip for generating a visible light radiation, is rather unsuitable for a UVC LED chip. This procedure would result in damage and degradation of the adhesive by the high-energy UVC radiation, and thus a limitation of the service life. Another possible approach to providing an air gap between the semiconductor chip and the lens is associated with multiple radiation reflections due to the associated refractive index transitions (semiconductor chip air and air lens). This can lead to losses in efficiency.The object of the present invention is to specify a solution for an improved radiation-emitting component.This object is achieved by the features of the independent claims. Further advantageous embodiments of the invention are set forth in the dependent claims.According to one aspect of the invention, a radiation-emitting component is proposed. The component comprises a carrier, a radiation-emitting semiconductor chip, a radiation-transmissive covering element and a radiation-transmissive bridging material. The semiconductor chip is arranged on the carrier. The cover element is also arranged on the carrier. A fastening connection is produced between the cover element and the carrier. The semiconductor chip has an emission side for radiation emission. The cover element has an input side for the input of radiation. The emission side of the semiconductor chip and the coupling-in side of the cover element are opposite one another and are separated by a space. The bridging material is present at least in the region of the interspace and adjoins the emission side of the semiconductor chip and the coupling-in side of the cover element. In this way, a radiation-conducting connection is produced between the semiconductor chip and the cover element via the bridging material, separately from the fastening connection between the cover element and the carrier.The proposed radiation-emitting component can be distinguished by a high efficiency of the radiation extraction and thus an efficient mode of operation. In radiation operation, electromagnetic radiation or light radiation generated by the semiconductor chip can be emitted from its emission side and coupled directly into the bridging material, after passing through the bridging material, can be coupled directly into the covering element or its coupling side, and can subsequently be emitted from the covering element. The radiation can thus be kept in materials with a high refractive index (i.e. refractive index greater than air) before it can then be coupled out of the cover element. In this respect, a refractive index adaptation can be made possible by the bridging material. High refractive index jumps, as is the case in the presence of an air gap, and associated multiple reflections and efficiency losses, can be avoided or largely suppressed in this way.Furthermore, a material having a high stability and resistance with respect to the radiation generated by the semiconductor chip can be used for the bridging material. In this respect, the component can be realized in such a way that a long service life is possible. This can be further promoted by the fact that a large selection of possible materials is available for the bridging material. This is because in the component, the bridging material bridging the interspace ensures the radiation-conducting connection between the semiconductor chip and the cover element, whereas the fastening connection between the cover element and the carrier is spatially separated and implemented separately therefrom or in another manner. In other words, in the component, there is a separation of the fixing function of the cover element from the radiation-guiding or refractive-index adaptation function.In the following, further possible details and embodiments are described which can be considered for the radiation-emitting component.The proposed structure of the radiation-emitting component may be expedient with respect to the following embodiment. In this case, the semiconductor chip is configured to generate UV radiation (ultraviolet radiation). Accordingly, the bridging material is UV resistant. The UV radiation can be short-wave UVC radiation. As a result, the component is suitable for disinfection applications and can be used, for example, for disinfection of air, water and / or surfaces.The cover element can be formed from a suitable radiation-transmissive material. The relevant material can likewise be resistant to the radiation of the semiconductor chip or UV-resistant. Possible examples of materials for this are glass or sapphire.The fastening connection between the cover element and the carrier can be a soldered connection or an adhesive connection. Accordingly, the fastening connection can be realized via a connecting material in the form of a solder or adhesive.The coupling-in side of the cover element can be planar. Embodiments differing therefrom are also possible, as will be explained in the following.In a further embodiment, the coupling-in side of the cover element has a curvature. The curvature can be present at least in a partial region of the coupling-in side. The curvature can be a convex curvature, such that the coupling-in side can be curved outwards and in the direction of the emission side of the semiconductor chip. Alternatively, the curvature can be a concave curvature, such that the coupling-in side can be curved inwardly and in the direction away from the emission side of the semiconductor chip. During operation of the radiation-emitting component, beam shaping can be effected via the curvature of the cover element. The cover element with the curved coupling-in side can thus be an optical element or a lens. The curvature of the coupling-in side can furthermore serve, during the production of the component, to control a predefined accumulation of the bridging material at least in the region of the interspace between the emission side of the semiconductor chip and the coupling-in side of the cover element.The latter also applies to the following embodiment, in which the coupling-in side of the cover element has a circumferential cutout. By means of the encircling cutout, a covering of the coupling-in side of the cover element with the bridging material is limited to a region within the cutout. In this embodiment, a stop edge can be provided by the cutout, by means of which a positioning of the bridging material on the coupling-in side of the cover element can be established.The cover element can have an output side opposite the input side. Via the decoupling side, the radiation generated by the semiconductor chip, after passing through the bridging material and the cover element, can be decoupled from the cover element and thereby emitted by the latter. The coupling-out side can be planar or substantially planar. The decoupling side can furthermore have a roughened surface or surface texture, which promotes radiation decoupling from the cover element.In a further embodiment, the decoupling side of the cover element opposite the coupling-in side has a curvature. The curvature can be present at least in a partial region of the coupling-out side. The curvature can be a convex curvature, so that the coupling-out side can be curved outwards. The curvature of the coupling-out side can bring about beam shaping during operation of the radiation-emitting component, with the result that the covering element can serve as an optical element or lens.In a further embodiment, the radiation-emitting component has a wetting-inhibiting coating on the covering element and / or on the carrier, in the region of which there is no covering or wetting of the covering element and / or of the carrier with the bridging material. This configuration also makes it possible to achieve a specific positioning of the bridging material during the production of the component. The anti-wetting coating may be formed of a material having an intrinsically low wetting ability, such as Teflon. A configuration in the form of a superhydrophobic or superamphiphobic coating is also possible. In this case, the coating can have a structured coating material or microstructures for minimizing wetting.The semiconductor chip of the radiation-emitting component can be designed to generate a light radiation. The semiconductor chip may further be an LED (light-emitting diode) chip. With respect to the above-mentioned generation of UVC radiation, the semiconductor chip may be a UVC LED chip.The semiconductor chip is arranged on the carrier and can be mechanically and electrically connected to the carrier. The semiconductor chip can have contacts via which the semiconductor chip can be contacted and electrically supplied. The carrier can have a conductor structure with mating contacts, which can be electrically conductively connected to the contacts of the semiconductor chip. In this way, the semiconductor chip can be supplied with electrical energy via the carrier during operation of the radiation-emitting component. The carrier can have a mounting side or a mounting region on / in which the semiconductor chip can be arranged on the carrier. At least one contact of the semiconductor chip may be connected to a corresponding counter contact of the carrier via an electrically conductive connection material such as a solder agent or an electrically conductive adhesive. It is furthermore possible for at least one contact of the semiconductor chip to be connected to a corresponding mating contact of the carrier via a bonding wire.In a further embodiment, the semiconductor chip is a surface emitter which is designed to emit radiation only via the emission side. This configuration makes it possible to promote efficient operating mode of the component.In a further embodiment, the semiconductor chip is a volume emitter which is designed to emit radiation not only via the emission side but also via lateral sides. The lateral sides of the semiconductor chip may extend perpendicular to the emission side. The use of the semiconductor chip designed as a volume emitter enables cost-effective production of the radiation-emitting component. In the radiation mode of the component, the radiation emitted via the lateral sides of the semiconductor chip can optionally only be partially used and coupled into the cover element. However, the radiation generated by the semiconductor chip can be emitted to a large or predominant extent via the emission side opposite the coupling-in side of the cover element, and therefore, as stated above, can be conducted efficiently via the bridging material to the cover element, with the result that this situation can be neglected.The bridging material can comprise only one material component or else a plurality of material components. The following configurations can also be considered for the bridging material.In a further embodiment, the bridging material is liquid or viscous under standard conditions. In this way, a cost-effective and also gentle production of the radiation-emitting component is possible. In this configuration, the (viscous) liquid bridging material can be held at least in the region of the intermediate space between the semiconductor chip and the cover element by the influence of the surface tension and / or capillary forces. The bridging material may be or comprise, for example, one of the following materials: water; ethanol; methanol; acetic acid; isopropanol; ethyl acetate; toluene; hexane; chloroform; tetrachloromethane; glycerol. The aforementioned materials can have a high UV or UVC transmissivity and be UV-resistant. With regard to a state which is viscous under standard conditions, the bridging material can comprise one of the aforementioned materials and a viscosity-increasing additive contained therein, and can thus be present as a multicomponent material system.In another embodiment, the bridging material is solid under standard conditions. As a result, the radiation-emitting component can be distinguished by a stable structure. The bridging material can be or comprise a plastic or polymer material. The polymeric material may be a UV resistant polymeric material such as fluoropolymer. The latter can likewise have a high UV or UVC transmissivity.In a further embodiment, the bridging material surrounds the semiconductor chip and reaches as far as the carrier. The bridging material can thereby also adjoin lateral sides of the semiconductor chip. This configuration can therefore be used, for example, if the semiconductor chip is designed as a volume emitter. In this case, the radiation emitted via the lateral sides of the semiconductor chip can be coupled directly into the bridging material present at this location, and can be passed on via the bridging material at least partially to the covering element.With respect to the aforementioned configuration, it is provided according to a further embodiment that the carrier has a delimiting structure for delimiting a covering of the carrier with the bridging material. In this way, during the production of the component, a positioning of the bridging material in the region of the carrier can be established. The delimiting structure can be realized, for example, by a conductor structure of the carrier or by another structure by means of which corresponding stop edges can be provided.In a further embodiment, the cover element and the carrier surround an interior space in which the semiconductor chip and the bridging material are present. In this way, the semiconductor chip and the bridging material can be protected from external influences. There is the possibility that the interior space is hermetically sealed.In a further embodiment, the carrier has a cavity, within which the semiconductor chip is arranged on the carrier. The cavity of the carrier is laterally delimited by a circumferential wall structure of the carrier. The cover element is connected to the wall structure of the carrier. In this respect, the fastening connection exists between the cover element and the wall structure of the carrier. The fastening connection can have a circumferential shape. The carrier having the cavity can be, for example, a multilayer ceramic carrier provided with a conductor structure. A configuration is also possible in which the carrier comprises a ceramic carrier plate provided with a conductor structure, and the wall structure is a structure made of a metallic material arranged or deposited thereon.In a further embodiment, the cover element has a cavity, within which the semiconductor chip is arranged on the carrier. The cavity of the cover element is laterally delimited by a circumferential wall structure of the cover element. The wall structure of the cover element, from which the coupling-in side of the cover element can be laterally enclosed, is connected to the carrier. In this respect, the fastening connection exists between the wall structure of the cover element and the carrier. The fastening connection can have a circumferential shape. The carrier can be, for example, a ceramic carrier plate provided with a conductor structure.According to a further aspect of the invention, a method for producing a radiation-emitting component is proposed. The method comprises providing a carrier, a radiation-emitting semiconductor chip, a radiation-transmissive cover element and a radiation-transmissive bridging material. The semiconductor chip has an emission side for radiation emission. The cover element has an input side for the input of radiation. The method further comprises arranging the semiconductor chip on the carrier, arranging the bridging material on the carrier or cover element, and arranging the cover element and the carrier such that the emission side of the semiconductor chip and the coupling side of the cover element are opposite one another and are separated by a space. Furthermore, provision is made for establishing a fastening connection between the cover element and the carrier, and for carrying out a heating process for changing an aggregate state of the bridging material. This has the consequence that a radiation-conducting connection is produced between the semiconductor chip and the cover element via the bridging material, and the bridging material is present at least in the region of the intermediate space and adjoins the emission side of the semiconductor chip and the coupling-in side of the cover element. The radiation-conducting connection is separate from the fastening connection between the cover element and the carrier.The method can be used to reliably produce the radiation-emitting component described above. All details about the component can therefore also be used for the method, and correspondingly all the explanations given for the method can apply to the component. The component produced with the method can be distinguished, for example, by efficient radiation operation. Also, a large number of possible material configurations are available for the bridging material. This may prove to be advantageous in a possible configuration of the semiconductor chip for generating UV or UVC radiation. Accordingly, a UV resistant bridging material can be used to achieve a long life.In one embodiment, the conducting of the heating process causes evaporation of the bridging material and subsequent condensation of the bridging material on the cover element and the semiconductor chip at least in the region of the interspace. This process variant can be used for a bridging material which is liquid or viscous under standard conditions. This enables a gentle production of the radiation-emitting component. Here, the heating process may be performed in such a manner that no deterioration or damage occurs to a component such as the semiconductor chip. This is advantageous if the semiconductor chip is a UVC LED chip, for example.For causing evaporation and condensation of the bridging material, a suitable temperature difference or gradient may be generated on the support and cover member. For this purpose, a heating device can be used for providing appropriate temperatures.The bridging material may be located on the carrier and in the region of the semiconductor chip before the heat process is carried out. For the heating process, an arrangement may be provided in which the cover element is located above the carrier. If the carrier has a cavity, the bridging material can be applied to the carrier within its cavity. If the cover element has a cavity, the bridging material can be applied to the cover element within its cavity. This can take place in an upside-down position of the cover element. For the heating process, the carrier and the cover element can subsequently be arranged or rotated in such a way that the bridging material is positioned on the carrier by the influence of the force of gravity.As a result of the evaporation, the gaseous bridging material can rise in the direction of the cover element and be deposited at least in the region of the intermediate space on the semiconductor chip and the cover element. Accumulation of bridging material in this area can be caused by surface tension and capillary forces. By means of the above-mentioned further features such as a curvature, for example a convex curvature of the coupling-in side of the cover element, a configuration of the coupling-in side with a circumferential recess, and / or a configuration of the cover element and / or carrier with a wetting-inhibiting coating, the positioning of the bridging material can be additionally promoted or controlled.In a further embodiment, the carrying out of the thermal process brings about liquefaction of the bridging material and subsequent wetting of the covering element and of the semiconductor chip with the bridging material at least in the region of the interspace. This process variant can be used for a bridging material which is solid under standard conditions. The bridging material used may be, for example, a granulate of a polymer material such as fluoropolymer. To effect liquefaction of the bridging material, a suitable heating device may be used.The bridging material may be located on the coupling-in side of the cover element before the heat process is carried out. In this case, a head-on arrangement (also referred to as an upper-down arrangement) of the covering element and carrier can be provided, in which arrangement the covering element is located below the carrier. If the carrier has a cavity, the bridging material can be applied to the carrier within its cavity. For the heating process, the carrier and the cover element can subsequently be arranged or rotated in such a way that the bridging material is positioned on the coupling-in side of the cover element by the influence of gravity. If the cover element has a cavity, the bridging material can be applied to the coupling-in side of the cover element within its cavity. This can take place in an upside-down position of the cover element. For the heating process, this position of the cover element can be maintained.The heating process can cause melting of the bridging material and accumulation of the melted liquid bridging material at least in the region of the interspace between the covering element and the semiconductor chip. Here too, the influence of the surface tension and of capillary forces can be brought into effect. In addition, it is possible to promote or control the positioning by means of the abovementioned further features such as a curvature of the coupling-in side of the cover element, a configuration of the coupling-in side with a circumferential cutout, and / or a configuration of the cover element and / or carrier with a wetting-inhibiting coating. The curvature of the cover element may be concave, so that, together with the influence of gravity, a merging of the liquid bridging material can be achieved.The above-mentioned method steps, i.e. providing the components of the component, arranging the semiconductor chip on the carrier, arranging the bridging material on the carrier or cover element, arranging the cover element and carrier such that the emission side of the semiconductor chip and the coupling side of the cover element are opposite one another, establishing the fastening connection between the cover element and the carrier, carrying out the heating process, can be carried out in the stated order. If the bridging material is arranged on the cover element, this step can take place before, after or simultaneously with the arrangement of the semiconductor chip on the carrier. Further, the steps of disposing the cover member and the support such that the emission and coupling sides are opposed to each other and forming the fastening joint may be performed together. Alternatively, the steps of establishing the fastening connection and performing the heating process may be performed together.In a further embodiment realized in this sense, the establishment of the fastening connection between the cover element and the carrier comprises the carrying out of the heating process. This allows time and cost savings. In this method variant, the thermal process can, for example, melt a solder agent used for connecting the cover element to the carrier, or cure an adhesive used for the connection.The advantageous embodiments and developments of the invention explained above and / or reproduced in the dependent claims can be used-apart from, for example, in cases of unambiguous dependencies or incompatible alternatives-individually or else in any combination with one another.The above-described properties, features and advantages of this invention, and the manner in which these are achieved, become clearer and more clearly comprehensible in conjunction with the following description of exemplary embodiments, which are explained in more detail in conjunction with the schematic drawings. The following are shown: FIG. 1 shows a lateral illustration of a radiation-emitting component; FIG. 2 shows plan views of components of the radiation-emitting component of FIG. 1 ; FIGS. 3 to 7 show method steps for producing the radiation-emitting component from FIG. 1 ; FIG. 8 shows a lateral illustration of a radiation-emitting component according to a further configuration; FIG. 9 shows a lateral illustration of a radiation-emitting component according to a further configuration; FIG. 10 shows a lateral illustration of a radiation-emitting component according to a further configuration; FIGS. 11 to 15 show method steps for producing the radiation-emitting component from FIG. 10 ; FIG. 16 shows a lateral illustration of a radiation-emitting component according to a further configuration; FIG. 17 shows a lateral illustration of a radiation-emitting component according to a further embodiment; FIG. 18 shows a lateral illustration of a radiation-emitting component according to a further embodiment; and FIGS. 19 to 22 show method steps for producing the radiation-emitting component from FIG. 18.On the basis of the schematic figures, configurations of a radiation-emitting component 100 and of an associated production method are described. It should be noted that the schematic figures may not be to scale. Therefore, components and structures shown in the figures may be illustrated excessively large or reduced for better understanding. In addition, it is pointed out that features and details which are mentioned with respect to one configuration are also used with respect to other configurations, and a plurality of configurations and features thereof can be combined with one another. Matching features can be described in detail here only with respect to one configuration.FIG. 1 shows a lateral sectional illustration of a radiation-emitting component 100. For the purpose of better illustration, FIG. 2 additionally depicts top view representations of components of the component 100. The component 100 comprises a carrier 110, a radiation-emitting semiconductor chip 140 for generating a light radiation 200, a radiation-transmissive covering element 150 and a radiation-transmissive bridging material 170. The radiation transmission of the cover element 150 and bridging material 170 relates (at least) to the light radiation 200 emitted by the semiconductor chip 140.The carrier 110 of the radiation-emitting component 100 is realized in the form of a multilayer ceramic carrier which comprises a cavity 117 open to one side and is provided with an electrical or metallic conductor structure 120. In this case, the carrier 110 has a ceramic carrier plate 111 and a closed, encircling ceramic wall structure 112 arranged on the carrier plate 111. The wall structure 112 protrudes beyond the semiconductor chip 140. The cavity 117 of the carrier 110 is laterally delimited by the circumferential wall structure 112. The wall structure 112 is connected to the carrier plate 110 via a connecting material 115, for example an adhesive. As illustrated in FIG. 2 (left illustration), the carrier 110, the wall structure 112 and the cavity 117 may have a rectangular or square shape when viewed in plan view.The conductor structure 120 of the carrier 110 is formed on the carrier plate 111 and comprises, as shown in FIG. 1, two counter contacts 125 provided for connection to the semiconductor chip 140, two external contacts 128 serving for external contacting of the radiation-emitting component 100, and two through contacts 127 extending through the carrier 110 or its carrier plate 111. Each of the mating contacts 125 is connected to one of the external contacts 128 via a through contact 127. The counter contacts 125 are located on an upper side of the carrier plate 111 in FIG. 1, and the external contacts 128 are present on a lower side of the carrier plate 111 in FIG. 1.The relevant sides can also be referred to as front or mounting side and rear side.The semiconductor chip 140 of the radiation-emitting component 100 is a volume emitter which emits the light radiation 200 generated during operation, as indicated in FIG. 1 by arrows, via an emission side 141 and lateral sides 142 running perpendicular to the emission side 141. The emission side 141 may also be referred to as a front side of the semiconductor chip 140. The semiconductor chip 140 is furthermore realized in the form of a flip chip with two contacts 145 on a side or rear side opposite the emission side 141. Electrical energy for generating radiation can be supplied to the semiconductor chip 140 via the contacts 145. As illustrated in FIG. 2, the semiconductor chip 140 may have a rectangular or square plan view shape, and accordingly four lateral sides 142. The semiconductor chip 140 may be a light-emitting diode (LED) chip. The semiconductor chip 140 may further be configured to generate a UV radiation (ultraviolet radiation) such as a short-wave UVC radiation, and thus may be a UVC LED chip. As a result, the component 100 can be used, for example, for disinfection of air, water and / or surfaces.As shown in FIG. 1, the semiconductor chip 140 is arranged inside the cavity 117 on the carrier 110 or on the carrier plate 111 thereof, and is mechanically and electrically connected to the carrier 110. In this case, the rear side of the semiconductor chip 140 lies opposite the mounting side of the carrier 110, and the semiconductor chip 140 is mounted with the contacts 145 on the mating contacts 125 of the carrier 110. A connection between the contacts 145 and mating contacts 125 can be produced via an electrically conductive connecting material, not shown, such as a solder or an electrically conductive adhesive. In this way, the semiconductor chip 140 can be electrically supplied via the conductor structure 120 of the carrier 110 during the radiation operation of the component 100.According to the schematic illustration of FIG. 1, the semiconductor chip 140 has an active region 143 or region generating the light radiation 200, which is located on the rear side of the semiconductor chip 140 having the contacts 145. The radiation-generating region 143 can be formed by a semiconductor layer sequence. The semiconductor chip 140 may furthermore comprise components such as a radiation-transmissive chip substrate made of, for example, sapphire, by which the emission side 141 and at least a part of the lateral sides 142 may be formed. In this respect, the semiconductor chip 140 can be a bulk-emitting sapphire flip chip.The cover element 150 of the radiation-emitting component 100 can be formed from glass or sapphire. As shown in FIG. 1, the cover element 150 has a substantially plate-shaped configuration with two opposite sides, i.e. an input side 151 provided for the radiation input and an output side 155 serving for the radiation output. The cover member 150 may have a rectangular or square plan view shape as will be apparent from FIG. 2 (right illustration).The cover element 150 is arranged on the carrier 110, and for this purpose is mounted in an edge region with the coupling-in side 151 on the wall structure 112 of the carrier 110. At this point, the cover element 150 and the wall structure 112 are mechanically connected to one another via a connecting material 160 such that a fastening connection 165 is present between the cover element 150 and the carrier 110. The bonding material 160 may be a solder or adhesive, and accordingly the attachment joint 165 may be a solder or adhesive joint. Corresponding to the wall structure 112 of the carrier 110, the fastening connection 165 may have a closed circumferential shape. This is indicated in the right-hand illustration of FIG. 2 by means of dashed lines.In the radiation-emitting component 100 of FIG. 1, the cover element 150 covers the cavity 117 of the carrier 110, such that the carrier 110 and the cover element 150 together surround an interior space in which the semiconductor chip 140 and also the bridging material 170 are located. The interior space can be hermetically sealed. Furthermore, the coupling-in side 151 of the cover element 150 and the emission side 141 of the semiconductor chip 140 are opposite one another and are separated from one another by a space 205.In this region, the bridging material 170 is located, which adjoins both the emission side 141 of the semiconductor chip 140 and the coupling-in side 151 of the cover element 150, and thereby closes or bridges the intermediate space 205 between the semiconductor chip 140 and the cover element 150. The bridging material 170, which completely covers the emission side 141 of the semiconductor chip 140, has a cross-sectional shape widening in the direction of the coupling-in side 151 of the cover element 150. The bridging material 170 has a high stability and resistance with respect to the light radiation 200 generated by the semiconductor chip 140. The bridging material 170 can be a material which is liquid or viscous or gel-like under standard conditions and can be held in the region of the intermediate space 205 between the semiconductor chip 140 and the cover element 150 by the influence of the surface tension and / or capillary forces. For this purpose, the semiconductor chip 140 and the cover element 150 may have a suitable spacing in the region of the intermediate space 205. Possible material examples for the bridging material 170 are explained further below.Bridging material 170 serves for adjusting the refractive index, and establishes a radiation-conducting connection 175 between semiconductor chip 140 and covering element 150.By this configuration, compared to providing an air gap between the semiconductor chip 140 and the cover member 150, a high efficiency of radiation extraction and, as a result, an efficient operation of the radiation emitting device 100 may be enabled. In radiation operation, the light radiation 200 emitted by the semiconductor chip 140 via the emission side 141 can be coupled directly into the bridging material 170, after passing through the bridging material 170, can be coupled directly into the coupling side 151 of the cover element 150, and can subsequently be emitted via the coupling-out side 155 thereof after passing through the cover element 150. Achieving a high efficiency is based on the fact that the light radiation 200 is located in the aforementioned radiation path before leaving the cover element 150 exclusively in components and materials having a high refractive index, i.e. a refractive index greater than air. Multiple reflections and associated losses in efficiency, as occur in the case of an air gap due to the transitions present in the radiation path with large changes in the refractive indices, can therefore be largely suppressed.In radiation operation, a portion of the light radiation 200 can also be emitted via the lateral sides 142 of the semiconductor chip 140. This radiation portion can optionally only be partially used and coupled into the cover element 150 and emitted by the latter. However, a large or predominant part of the generated light radiation 200 can be emitted from the semiconductor chip 140 via the emission side 141 and therefore, as described above, can be effectively guided to the covering element 150 via the bridging material 170, and therefore this aspect can be neglected.In the radiation-emitting component 100 of FIG. 1, the radiation-conducting connection 175 between the semiconductor chip 140 and the cover element 150 is independent and separate from the fastening connection 165 between the cover element 150 and the carrier 110. In other words, in the component 100, there is a separation of the fastening function of the cover element 150 from the radiation guiding or refractive index adaptation function. Accordingly, a wide variety of different configurations and material appearances may be considered for the bridging material 170. This proves to be favorable if the semiconductor chip 140 is designed as indicated above for generating UV or UVC radiation. A suitable UV-resistant material can therefore be provided for the bridging material 170, regardless of any adhesion or fixing effect. As a result, the component 100 can have a long service life.In the configuration shown in FIG. 1, the decoupling side 155 of the cover element 150 is planar. In contrast, in the region of the bridging material 170, the coupling-in side 151 has a convex curvature 152, and therefore a curvature in the direction of the emission side 141 of the semiconductor chip 140. The curvature can be part-spherical or substantially part-spherical. In this way, beam forming can be achieved during operation of the radiation-emitting component 100, with the result that the cover element 150 can serve as an optical element or lens. The convex curvature 152 of the coupling side 151 can furthermore be used to control a predefined accumulation of the bridging material 170 in the region of the intermediate space 205 during the production of the component 100.For the same purpose, the cover element 150 according to FIG. 1 has a circumferential cutout 154 on the coupling-in side 151, by means of which a covering of the coupling-in side 151 with the bridging material 170 is limited to a region within the cutout 154. The cutout 154 can form a stop edge here, up to which the bridging material 170 can reach, so that a positioning of the bridging material 170 on the coupling-in side 151 is fixed. Viewed in plan view, the cutout 154, as is indicated in the right-hand illustration of FIG. 2 by means of dashed lines, can have a substantially rectangular or square contour with rounded corners. Viewed in plan view, the contour of the cutout 154 furthermore projects beyond the semiconductor chip 140, which results in the cross-sectional shape of the bridging material 170 which is shown in FIG. 1 and widens in the direction of the coupling-in side 151.In the following, a possible method for producing the radiation-emitting component 100 from FIG. 1 is described on the basis of lateral representations. In the method, components of the component 100 such as the ceramic carrier 110, the radiation-emitting semiconductor chip 140, the radiation-transmissive covering element 150 and the radiation-transmissive bridging material 170 are provided. The carrier 110 provided is depicted in FIG. 3. Providing the carrier 110 may comprise connecting the ceramic carrier plate 110 provided with the conductor structure 120 to the ceramic wall structure 112 using the connecting material 115.A chip mounting is then carried out, in which the semiconductor chip 140, as shown in FIG. 4, is arranged on the carrier 110 within the cavity 117 of the carrier 110. In this process, the contacts 145 of the semiconductor chip 140 are connected to the mating contacts 125 of the conductor structure 120 of the carrier 110, for example by soldering or adhesive bonding.In a further step, as shown in FIG. 5, the bridging material 170 is applied to the carrier 110 within its cavity 117 such that the bottom of the cavity 117 is covered with the bridging material 170 and the bridging material 170 is also located in the region of the semiconductor chip 140 or adjoins the semiconductor chip 140. As indicated above, under standard conditions, the bridging material 170 may be liquid and thus the application of the bridging material 170 may be in a (viscous) liquid state thereof. The application of the bridging material 170 may be performed using a material dispenser, such as a dispenser (see FIG. 11 with the material dispenser 220).Subsequently, as illustrated in FIG. 6, the cover member 150 is disposed on and bonded to the wall structure 112 of the carrier 110 using the bonding material 160. The bonding material 160 may be previously applied to the wall structure 112 or the cover plate 150. Depending on the configuration of the connecting material 160 as, for example, a solder or adhesive, the connecting can comprise a soldering or adhesive. The mounting of the cover element 150 on the carrier 110 takes place in such a way that the cavity 117 of the carrier 110 is covered with the cover element 150. In this state, the emission side 141 of the semiconductor chip 140 and the coupling side 151 of the cover member 150 are opposed to each other, and the space 205 is provided between the two sides 141, 151.A heating process is then carried out in order to achieve evaporation of the bridging material 170 followed by condensation or recondensation of the bridging material 170 on the covering element 150 and the semiconductor chip 140 in the region of the interspace 205. This step is depicted in FIG. 7. The heating process is performed using a heating device comprising two tool parts 211, 212 for providing respective temperatures and thereby generating a suitable temperature difference on the carrier 110 and the cover element 150. In the process, the tool part 211 adjoins the carrier 110 on the rear side and the tool part 212 adjoins the decoupling side 155 of the cover element 150. The tool part 211 is for generating a temperature T 1, and the tool part 212 is for generating a temperature T 2<T 1. The tool part 211 may be a heating plate, and the tool part 212 may be another heating plate or a heat sink.As is indicated in FIG. 7 inter alia by means of dashed arrows, the heating process with the provision of the temperature difference leads to the vaporized gaseous bridging material 170 rising and moving in the direction of the covering element 150 and intermediate space 205, and thus to the bridging material 170 being deposited and accumulated on the covering element 150 and the semiconductor chip 140 in the region of the intermediate space 205. The accumulation of bridging material 170 in this region can be achieved by the surface tension and capillary forces, and can additionally be supported by the configuration of coupling side 151 of covering element 150 with convex curvature 152 and circumferential cutout 154. As stated above, a stop edge can be provided by the cutout 154, and the coverage of the coupling-in side 151 with the bridging material 170 can thereby be fixed to a region within the cutout 154. After carrying out the heating process, the radiation-emitting component 100 is present having the structure shown in FIG. 1.In a possible modification of the method sequence described above, the connection of the cover element 150 to the carrier 110 (FIG. 6 ) and the heating process (FIG. 7 ) can take place in a common manner. In this method variant, the step shown in FIG. 6 merely comprises arranging the cover element 150 on the wall structure 112 of the carrier 110. If the connecting material 160 is a solder, the thermal process can cause the solder to melt. After the heating process, the solder may solidify, thereby bonding the cover member 150 and the carrier 110 together. If the connecting material 160 is an adhesive, the curing of the adhesive can be effected by the thermal process. In this way, a time and cost saving for the production method can be made possible.The use of the (viscous) liquid and evaporated bridging material 170 offers the possibility of gentle production of the radiation-emitting component 100. Here, the heating process may be performed using temperatures such that no deterioration or damage occurs to a component such as the semiconductor chip 140. This is advantageous if the semiconductor chip 140 is a UVC LED chip as stated above. Other processes such as chip mounting and connecting carrier 110 and cover element 150 may also be carried out in a way that protects semiconductor chip 140 or at low temperature.The following materials can be used for the (viscous) liquid bridging material 170, with the particular boiling temperature being stated:Water (100°C); ethanol (78.4°C); methanol (64.7°C); acetic acid (118.1°C); isopropanol (82.6°C); ethyl acetate (77.1°C); toluene (110.6°C); hexane (68.7°C); chloroform (61.2°C); tetrachloromethane (76.7°C); glycerol (290°C).In order to carry out the heating process with one of these materials in the manner described above, a temperature T 1 above the respective boiling temperature is set or provided with the tool part 211, and a temperature T 2 below the respective boiling temperature is set or provided with the other tool part 212.The aforementioned materials can have a high UV or UVC transmissivity and be UV-resistant. To provide a viscous material characteristic under standard conditions, the bridging material 170 may comprise one of the aforementioned materials and a viscosity-enhancing additive contained therein, and thereby be a multicomponent bridging material 170.Further variants and configurations which can be considered for a radiation-emitting component 100 described here and a corresponding production method are explained below. Matching features and aspects and identical and identically functioning components will not be described in detail again below. For details in this respect, reference is made instead to the above description. Reference is also made to the possibility of combining features of two or more of the configurations described here.A different configuration can be considered for the carrier 110 with the cavity 117. For example, a configuration is conceivable in which the carrier 110 comprises the ceramic carrier plate 111 with the conductor structure 120, and the encircling wall structure 112 is realized in the form of a metallic structure electrodeposited on the carrier plate 111 (not illustrated).A further possible modification is the use of a surface emitter instead of a volume emitter. For the purpose of illustration, FIG. 8 shows a lateral sectional illustration of a radiation-emitting component 100 according to a further configuration. In contrast to the component 100 of FIG. 1, the component 100 has a radiation-emitting semiconductor chip 140 in the form of a surface emitter. In the radiation mode, the light radiation 200 generated by the semiconductor chip 140 is emitted only via the emission side 141 of the semiconductor chip 140 opposite the coupling-in side 151 of the cover element 150, as is indicated in FIG. 8 by means of an arrow, and not via the lateral sides 142. As a result, the component 100 can be distinguished by an efficient operating mode. Similarly, the light radiation 200 may be effectively directed to and subsequently emitted from the cover member 150 via the bridging material 170.In the configuration depicted in FIG. 8, the semiconductor chip 140 has two contacts 145 on the rear side opposite the emission side 141, such that the semiconductor chip 140 can be a flip chip. The semiconductor chip 140 may further be a UVC LED chip. The semiconductor chip 140 is mounted with its contacts 145 on the mating contacts 125 of the conductor structure 120 of the carrier 110. As is schematically illustrated in FIG. 8, the semiconductor chip 140 has a light-generating region 143, which is present on the emission side 141. The light-generating region 143 can be formed by a semiconductor layer sequence. The semiconductor chip 140 may also include other components such as a chip substrate. The radiation-emitting component 100 from FIG. 8 can be produced in accordance with the method sequence explained above with reference to FIGS. 3 to 7.FIG. 9 shows a lateral sectional illustration of a radiation-emitting component 100 with a further configuration of a radiation-emitting semiconductor chip 140 in the form of a surface emitter. In contrast to the semiconductor chip 140 of FIG. 8, the semiconductor chip 140 of FIG. 9 does not have a horizontal design (with contacts 145 on the same side), but rather a vertical design. Accordingly, the semiconductor chip 140 has contacts 145, 146 on opposite sides, via which the semiconductor chip 140 can be electrically supplied. One contact 145 is provided on the back side opposite to the emission side 141, and the other contact 146 is provided on the emission side 141. The semiconductor chip 140 is mounted with the rear-side contact 145 and on one of the counter contacts 125 of the conductor structure 120 of the carrier 100 using an electrically conductive connection material, for example a solder or an electrically conductive adhesive, which is not shown. The front-side contact 146 is connected via a bonding wire 190 to the further mating contact 125 of the conductor structure 120. The semiconductor chip 140 whose light-generating region 143 is located on the emission side 141 may again be a UVC LED chip.The radiation-emitting component 100 from FIG. 9 can be produced in accordance with the procedure described above with reference to FIGS. 3 to 7. In the context of chip mounting on the carrier 110, the semiconductor chip 140 with the contact 145 is arranged on one of the mating contacts 125 of the conductor structure 120, and the contact 146 is connected to the other mating contact 145 of the conductor structure 120 by carrying out a wire bonding process.A further possible modification consists in the use of a cover element 150 with a cavity 158. This is the case in a further configuration of a radiation-emitting component 100 shown in FIG. 10 in a lateral sectional illustration. In this case, the cover element 150 has on its circumference a closed encircling wall structure 157, by means of which the cavity 158 of the cover element 150 which is open towards one side is laterally delimited. The wall structure 157 has a vertical thickness which exceeds a vertical height of the semiconductor chip 140 arranged on the carrier 110. The wall structure 157 can have, corresponding to the wall structure 112 of the carrier 110 shown in the preceding figures, a rectangular or square shape (cf. FIG. 2 ) as seen in plan view. A configuration deviating from this, such as an oval or circular contour (not shown), for example, as seen in plan view, is also possible.The carrier 110 of the radiation-emitting component 100 of FIG. 10 is plate-shaped and is present only in the form of the ceramic carrier plate 111 provided with the conductor structure 120. The cover element 150 is arranged with the wall structure 157 on the carrier 110. In this embodiment, the fastening connection 165 realized via the connecting material 160 thus exists between the wall structure 157 of the cover element 150 and the carrier 110. Corresponding to the wall structure 157, the fastening connection 165 may have a closed, encircling shape.In the radiation-emitting component 100 depicted in FIG. 10, the carrier 110 and the cover element 150 together surround an interior space in which the semiconductor chip 140 and the (viscous) liquid bridging material 170 are located. The semiconductor chip 140 is designed here as a surface emitter with two rear-side contacts 145, corresponding to FIG. 8. It is also possible to use the vertically constructed semiconductor chip 140 from FIG. 9 or the volume emitter from FIG. 1. The coupling-in side 151 of the cover element 150, which is laterally enclosed by the wall structure 157 of the cover element 150 in the present case, and the emission side 141 of the semiconductor chip 140 are situated opposite one another and are separated by a space 205. In this region, the bridging material 170 is located, which bridges the interspace 205 and thereby produces the radiation-conducting connection 175 between the semiconductor chip 140 and the covering element 150. The radiation-conducting connection 175 is also present here separately from the fastening connection 165. According to the configuration shown in the preceding figures, the coupling-in side 151 of the cover element 150 has the convex curvature 152 and the encircling cutout 154 in order to control or fix accumulation of the bridging material 170 in the region of the intermediate space 205 during the production of the component 100.The cover element 150 of the radiation-emitting component 100 from FIG. 10 differs from the configuration shown in the preceding figures further in that the decoupling side 155 of the cover element 150 is not planar. Instead, the decoupling side 155 has a convex curvature 156 and is thus curved outwards. The curvature can be part-spherical or substantially part-spherical. In this way, beam shaping can also be effected by the output coupling side 155 during radiation operation of the component 100. The provision of the decoupling side 155 with the curvature 156 can also be considered with reference to the covering element 150 shown in other figures and having no wall structure 157. In a corresponding manner, a modified configuration with a planar decoupling side 155 can be provided for the cover element 150 of FIG. 10 having the wall structure 157 (in each case not illustrated).In the following, a possible method for producing the radiation-emitting component 100 from FIG. 10 is described on the basis of lateral representations. In the method, components of the component 100 such as the carrier 110, the semiconductor chip 140, the cover element 150 and the bridging material 170 are provided. Furthermore, as shown in FIG. 11, the bridging material 170 is applied to the cover element 150 within the cavity 158 thereof, such that the bottom of the cavity 158 is covered with the bridging material 170 (cf. additionally FIG. 13 ). This step takes place in an upside-down position of the cover element 150, so that the coupling-in side 151 and the cavity 158 of the cover element 150 are directed upward and accessible. The application of the (viscous) liquid connecting material 170 is carried out with the aid of a material dispensing device 220. The material dispensing device 220 may be a dispenser.In the method, furthermore, as shown in FIG. 12, chip mounting is carried out in which the semiconductor chip 140 is arranged on the carrier 110. In this step, the contacts 145 of the semiconductor chip 140 are connected to the mating contacts 125 of the conductor structure 120 of the carrier 110, for example, by soldering or adhesive bonding.Subsequently, as shown in FIG. 13, bringing together the carrier 110 and the cover element 150 and connecting the carrier 110 and the wall structure 157 of the cover element 150 using the connecting material 160 are carried out. The connecting may comprise soldering or adhesive bonding. The bonding material 160 may be previously applied to the carrier 110 as shown in FIG. 12. Alternatively, the bonding material 160 may be applied to the wall structure 157 of the cover member 150 (not shown). In order for the bridging material 170 to remain within the cavity 158 of the cover element 150, the cover element 150 for the joining and connection is still in the head-over position, and the carrier 110 equipped with the semiconductor chip 140 is likewise brought into a head-over position. When the carrier 110 and the cover element 150 are brought together, the semiconductor chip 140 is introduced into the cavity 158 of the cover element 150 such that the emission side 141 of the semiconductor chip 140 and the coupling side 151 of the cover element 150 are opposite one another and the interspace 205 is present between the two sides 141, 151.Subsequently, as shown in FIG. 14, the assembly of the carrier 110 and the cover member 150 is rotated and turned upside down so that the carrier 110 is located below the cover member 150. This process is associated with a movement of the (viscous) liquid connecting material 170 due to the force of gravity. After the rotation, the connecting material 170 is therefore located on the carrier 110 and adjoins the semiconductor chip 140 and on the inside the wall structure 157 of the cover element 150.Subsequently, as illustrated in FIG. 15, a heating process is performed to cause evaporation of the bridging material 170 followed by condensation of the bridging material 170 on the cover member 150 and the semiconductor chip 140 in the region of the space 205. The heating process is performed by means of a heating device having two tool parts 211, 212 for providing corresponding temperatures and thereby generating a temperature difference on the carrier 110 and the cover element 150. The tool part 211 adjoins the rear side of the carrier 110 and the tool part 212 adjoins the decoupling side 155 of the cover element 150. For this purpose, the tool part 212 has a shape matched to the decoupling side 155 and having a concave recess.A temperature T1 can be generated via the tool part 211 and a temperature T2<T1 can be generated via the tool part 212. In the heating process, because of the provision of the temperature difference, the vaporized bridging material 170 rises and moves toward the covering element 150 and the gap 205, and the bridging material 170 precipitates and accumulates on the covering element 150 and the semiconductor chip 140 in the region of the gap 205. This can be achieved by the surface tension and capillary forces, and in addition are promoted by the configuration of the coupling-in side 151 of the cover element 150 with the convex curvature 152 and the encircling cutout 154. After carrying out the heating process, the radiation-emitting component 100 depicted in FIG. 10 is present.The method sequence explained with reference to FIGS. 11 to 15 can be modified in a corresponding manner in such a way that the connection of cover element 150 and carrier 110 and the heating process are carried out together. In this method variant, the step explained with reference to FIG. 13 merely comprises the bringing together of the cover element 150 and the carrier 110 and arranging the wall structure 157 of the cover element 150 on the carrier 110.FIG. 16 shows a lateral sectional illustration of a radiation-emitting component 100 according to a further configuration. The component 100 has the cover element 150 with the circumferential wall structure 157 and the cavity 158. In contrast to the configurations of the preceding figures, the bridging material 170 is not only present in the region of the interspace 205 between the emission side 141 of the semiconductor chip 140 and the coupling-in side 151 of the cover element 150, but surrounds the semiconductor chip 140 and reaches as far as the carrier 110. The bridging material 170 adjoins both the emission side 141 and the lateral sides 142, the rear side opposite the emission side 141 and the contacts 145 of the semiconductor chip 140 in this way. This may prove to be advantageous if the semiconductor chip 140, as shown here, is a volume emitter which emits the light radiation 200 generated during operation via the emission side 141 and the lateral sides 142. During operation, the light radiation 200 emitted via the lateral sides 142 can also be coupled directly into the bridging material 170 present here, and as a result can be passed on via the latter at least partially to the covering element 150.The radiation emitting device 100 of FIG. 16 may be manufactured in the manner described above with reference to FIGS. 11 to 15 and using a suitable amount of the bridging material 170. Condensation and accumulation of the bridging material 170 vaporized in the thermal process additionally occurs at the carrier 110, laterally at the semiconductor chip 140, and between the carrier 110 and the semiconductor chip 140. Furthermore, controlling the covering of the carrier 110 with the bridging material 170 can take place by the carrier 110 having a delimiting structure for defining a positioning of the bridging material 170 in the region of the carrier 110. In the present case, the conductor structure 120 or the mating contacts 125 of the conductor structure 120 of the carrier 110 can serve as a delimiting structure. The conductor structure 120 can form stop edges, up to which the bridging material 170 that precipitates can extend. As a result, as shown in FIG. 16, a region laterally of the mating contacts 125 and on the inside of the wall structure 157 of the cover element 150 can be free of the bridging material 170. With respect to the cover member 150, the coverage of the engaging side 151 with the bridging material 170 can be determined via the circumferential recess 154, as described above.The configuration shown in FIG. 16, in which the semiconductor chip 140 is embedded in the bridging material 170 and the bridging material 170 reaches as far as the carrier 110, can also be provided for radiation-emitting components 100 shown in other figures by carrying out the production of the components 100 with a corresponding amount of the bridging material 170. For example, the component 100 of FIG. 1 can be realized in this manner with the carrier 110 having the cavity 117 (not illustrated).FIG. 17 shows a lateral sectional illustration of a radiation-emitting component 100 according to a further configuration. This component 100 also comprises the cover element 150 with the circumferential wall structure 157 and the cavity 158. In contrast to the embodiments of the preceding figures, the component 100 additionally has a wetting-inhibiting coating 180 arranged on the cover element 157 and the carrier 110. This configuration likewise or additionally offers the possibility of achieving a targeted positioning of the bridging material 170 during the production of the component 100. In the present case, the coating 180 is arranged within the interior space on the carrier 110 laterally of the contacts 145 of the semiconductor chip 140, on the connecting material 160, on the inner side of the wall structure 157 of the cover element 150, and in a region between the wall structure 157 and the encircling cutout 154 on the cover element 150.The coating 180 may be formed of a material having intrinsically low wettability. An example of this is a configuration of the coating 180 made of teflon. The coating 180 can also be implemented as a superhydrophobic or superamphophilic coating. In this embodiment, the coating 180 may include a structured coating material or microstructures to minimize surface tension and thus wetting. An example is a structure of interconnected hollow silica spheres which may additionally be coated with halosilane (not shown).Within the scope of the production of the radiation-emitting component 100 shown in FIG. 17, which can be effected in accordance with FIGS. 11 to 15, the coating 180 can be formed or applied in a suitable manner to these components 110, 115 before the covering element 150 and carrier 110 are brought together or joined together. Accordingly, in contrast to the schematic illustration in FIG. 17, the coating 180 cannot have a continuous shape, but rather can be present in the form of partial coatings present on the respective components 110, 150. In the heating process, condensation and thus coverage in the respective coated regions can be suppressed in a targeted manner via the coating 180.The configuration shown in FIG. 17 may be modified such that the coating 180 is provided at other locations, or only on the carrier 110 or only on the cover member 150. Furthermore, the use of such a wetting-inhibiting coating 180 can also be used for components 100 shown in other figures, for example the component 100 from FIG. 1, on the carrier 110 and / or the cover element 150 (not illustrated).FIG. 18 shows a lateral sectional illustration of a radiation-emitting component 100 according to a further configuration. This is a further modification of the component 100 from FIG. 1, in contrast to this, the coupling-in side 151 of the cover element 150 of the component 100 from FIG. 18 does not have a convex curvature, but instead a concave curvature 153, such that there is a curvature inward and in the direction away from the emission side 141 of the semiconductor chip 140. The curvature can be part-spherical or substantially part-spherical, and can bring about beam shaping during operation of the component 100. The concave curvature 153 of the coupling-in side 151 of the cover element 150 can furthermore be used to control a predefined accumulation of the bridging material 170 in the region of the interspace 205 between the semiconductor chip 140 and the cover element 150 during the production of the component 100.In this context, it is also possible to use such a configuration of the bridging material 170 in which the bridging material 170 is fixed under standard conditions. The bridging material 170 can be a plastic or polymer material. A fluoropolymer is possible, for example, which likewise has a high UV or UVC transmissivity and can be UV-resistant.For further explanation, a possible method for producing the radiation-emitting component 100 from FIG. 18 is described below with reference to lateral representations. In the method, components of the component 100 such as the carrier 110, the semiconductor chip 140, the cover element 150 and the bridging material 170 are provided. The bridging material 170 is provided in the present case in the form of a granulate of the polymer material or fluoropolymer, which therefore comprises particles 172, as indicated in FIG. 19. Furthermore, as likewise depicted in FIG. 19, steps take place such as chip mounting, in which the semiconductor chip 140 is mounted on the carrier 110 within the cavity 117, and the granulate of the bridging material 170 is applied to the carrier 110 within the cavity 117.Subsequently, as illustrated in FIG. 20, the cover member 150 is disposed on and bonded to the wall structure 112 of the carrier 110 using the bonding material 160. As a result, the emission side 141 of the semiconductor chip 140 and the coupling-in side 151 of the cover element 150 are situated opposite one another, and the interspace 205 is present between the two sides 141, 151.Subsequently, as shown in FIG. 21, the assembly of the carrier 110 and the cover member 150 is rotated and placed in an upside-down position so that the cover member 150 is located below the carrier 110. This process is associated with a movement of the granulate of the connecting material 170 due to the force of gravity. After the rotation, the connecting material 170 is therefore located on the coupling-in side 151 of the cover element 150 and adjoins the wall structure 112 of the carrier 110 on the inside. For the subsequent heating process, the carrier 110 and the cover member 150 remain in the upside-down position.As is also shown in FIG. 21, the heating process is carried out with the aid of a heating device comprising two tool parts 211, 212. The tool part 211 adjoins the decoupling side 155 of the cover element 150, and the tool part 212 adjoins the rear side of the carrier 110. The same temperature, which causes melting and thereby liquefaction of the connecting material 170, can be provided via the tool parts 211, 212. As shown in FIG. 22, this results in the melted liquid bridging material 170 accumulating in the region of the interspace 205 between the semiconductor chip 140 and the cover element 150, such that the bridging material 170 adjoins the emission side 141 of the semiconductor chip 140 and the coupling-in side 151 of the cover element 150 and thereby produces the radiation-conducting connection 175 between the semiconductor chip 140 and the cover element 150.This process can be achieved by the surface tension and capillary forces, and can additionally be supported by the configuration of the coupling-in side 151 of the cover element 150 with the concave curvature 153 and the circumferential cutout 154. The concave curvature 153 of the coupling-in side 151 can serve as a depression in this case, so that, together with the influence of gravity, a merging of the liquid bridging material 170 in the region of the intermediate space 205 can be promoted. A stop edge can be provided by the cutout 154, and the covering of the coupling-in side 151 with the bridging material 170 can thereby be fixed to a region within the cutout 154.After carrying out the heating process and cooling and thereby solidifying the bridging material 170, and a renewed rotation, the radiation-emitting component 100 shown in FIG. 18 is present.The method sequence explained with reference to FIGS. 19 to 22 can be modified in a corresponding manner in such a way that the connection of cover element 150 and carrier 110 and the heating process are carried out together. In this method variant, the step explained with reference to FIG. 20 merely comprises arranging the cover element 150 on the wall structure 112 of the carrier 110.In addition to the embodiments described above and depicted in the figures, further embodiments are conceivable which can comprise further modifications and / or combinations of features.For example, the method sequences of FIGS. 3 to 7, 11 to 15 and 19 to 22 can be carried out using a semiconductor chip 140 other than the respective semiconductor chip 140 shown, for example the vertically constructed semiconductor chip 140 of FIG. 9.A further modification consists in providing, in the radiation-emitting component 100 from FIG. 18, a configuration of the cover element 150 and carrier 110 corresponding to FIG. 10, i.e. in contrast to FIG. 18, the cover element 150 has the encircling wall structure 157 and cavity 158, and in the carrier 110 being of plate-shaped configuration and being present only in the form of the ceramic carrier plate 111 having the conductor structure 120. The configuration of the coupling-in side 151 of the cover element 150 with the concave curvature 153, on the other hand, may still be present in order to promote the production of the component 100. The production can in this case comprise a application of the granulate of the bridging material 170 on the cover element 150 within the cavity 158 thereof in the head-over position of the cover element 150 corresponding to FIG. 11, and a bringing together (and optionally connecting) of the carrier 110 equipped with the semiconductor chip 140 and the cover element 150 in the head-over position corresponding to FIG. 13, with the semiconductor chip 140 being introduced into the cavity 158 of the cover element 150. Subsequently, the heating process, in which the head-over position of cover element 150 and carrier 110 is continued, can be carried out in order to cause melting and liquifying of bridging material 170 and accumulation of liquid bridging material 170 in the region of interspace 205 between semiconductor chip 140 and cover element 150 (respectively not shown), as shown in FIGS. 21 and 22.With regard to further modifications, the above details regarding materials can be regarded as examples and other materials or UV-stable materials can be used. Correspondingly, a semiconductor chip 140 can be used, which is configured instead of UV radiation for generating another light radiation, for example a visible light radiation.A further configuration consists in forming the decoupling side 155 of the cover element 150 (provided with or without curvature 156) with a roughened surface or surface texture. As a result, radiation decoupling from the cover element 150 can be promoted.Although the invention has been illustrated and described in more detail by preferred exemplary embodiments, the invention is not restricted by the disclosed examples and other variations can be derived therefrom by the person skilled in the art without departing from the scope of protection of the invention.LIST OF REFERENCE CHARACTERS100 Radiation-emitting component 110 Carrier 111 Carrier plate 112 Wall structure 115 Connecting material 117 Cavity 120 Conductor structure 125 Mating contact 127 Through contact 128 External contact 140 Radiation-emitting semiconductor chip 141 Emission side 142 Lateral side 143 Radiation-generating region 145 Contact 146 Contact 150 Cover element 151 Input side 152 Convex curvature 153 Concave curvature 154 Cutout 155 Output side 156 Convex curvature 157 Wall structure 158 Cavity 160 Connecting material 165 Fastening connection 170 Bridging material 172 Particles 175 Radiation-conducting connection 180 Wetting-inhibiting coating 190 Bonding wire 200 Light radiation 205 Intermediate space 211 Tool part 212 Tool part 220 Material delivery device

Claims

Radiation-emitting component (100) comprising a carrier (110), a radiation-emitting semiconductor chip (140), a radiation-transmissive covering element (150) and a radiation-transmissive bridging material (170), wherein the semiconductor chip (140) is arranged on the carrier (110), wherein the covering element (150) is arranged on the carrier (110) and a fastening connection (165) is produced between the covering element (150) and the carrier (110), wherein the semiconductor chip (140) has an emission side (141) for radiation emission, wherein the covering element (150) has an incoupling side (151) for radiation incoupling, wherein the emission side (141) of the semiconductor chip (140) and the incoupling side (151) of the covering element (150) are opposite one another and are separated by a space (205), and wherein the bridging material (170) is present at least in the region of the interspace (205) and adjoins the emission side (141) of the semiconductor chip (140) and the coupling side (151) of the cover element (150), such that a radiation-conducting connection (175) is produced between the semiconductor chip (140) and the cover element (150) via the bridging material (170), separately from the fastening connection (165) between the cover element (150) and the carrier (110).The device of claim 1, wherein the semiconductor chip (140) is configured to generate UV radiation, and wherein the bridging material (170) is UV resistant.Component according to one of the preceding claims, wherein the coupling-in side (151) of the cover element (150) has a curvature (152, 153).Component according to one of the preceding claims, wherein the coupling-in side (151) of the cover element (150) has a circumferential cutout (154), by means of which a covering of the coupling-in side (151) of the cover element (150) with the bridging material (170) is limited to a region within the circumferential cutout (154).Component according to one of the preceding claims, wherein the cover element (150) has an output side (155) with a curvature (156) opposite the input side (151).Structural element according to one of the preceding claims, further comprising a wetting-inhibiting coating (180) on the covering element (150) and / or on the carrier (110), in the region of which there is no covering of the covering element (150) and / or of the carrier (110) with the bridging material (170).Component according to one of the preceding claims, wherein the semiconductor chip (140) is a surface emitter which is configured to emit radiation only via the emission side (141).Component according to one of Claims 1 to 6, wherein the semiconductor chip (140) is a volume emitter which is configured to emit radiation via the emission side (141) and via lateral sides (142).The structural element according to any one of the preceding claims, wherein the bridging material (170) is liquid or viscous under standard conditions.The device of any of claims 1 to 8, wherein the bridging material (170) is solid under standard conditions.Component according to one of the preceding claims, wherein the bridging material (170) surrounds the semiconductor chip (140) and extends as far as the carrier (110).The device of claim 11, wherein the carrier (110) comprises a delimiting structure for delimiting a covering of the carrier (110) with the bridging material (170).The device according to any one of the preceding claims, wherein the cover element (150) and the carrier (110) surround an interior space in which the semiconductor chip (140) and the bridging material (170) are present.Component according to one of the preceding claims, wherein the carrier (110) has a cavity (117), within which the semiconductor chip (140) is arranged on the carrier (110), wherein the cavity (117) of the carrier (110) is laterally delimited by a circumferential wall structure (112) of the carrier (110), and wherein the cover element (150) is connected to the wall structure (112) of the carrier (110).Component according to one of Claims 1 to 13, wherein the cover element (150) has a cavity (158), within which the semiconductor chip (140) is arranged on the carrier (110), wherein the cavity (158) of the cover element (150) is laterally delimited by a circumferential wall structure (157) of the cover element (150), and wherein the wall structure (157) of the cover element (150) is connected to the carrier (110).A method for manufacturing a radiation-emitting component (100), comprising: providing a carrier (110), a radiation-emitting semiconductor chip (140), a radiation-transmissive cover element (150) and a radiation-transmissive bridging material (170), wherein the semiconductor chip (140) has an emission side (141) for radiation emission, and wherein the cover element (150) has an incoupling side (151) for radiation incoupling; arranging the semiconductor chip (140) on the carrier (110); arranging the bridging material (170) on the carrier (110) or cover element (150); arranging the cover element (150) and the carrier (110) such that the emission side (141) of the semiconductor chip (140) and the incoupling side (151) of the cover element (150) are opposite each other and separated by a space (205); establishing a fastening connection (165) between the cover element (150) and the carrier (110); and carrying out a heating process for changing an aggregate state of the bridging material (170), such that a radiation-conducting connection (175) is established between the semiconductor chip (140) and the cover element (150) via the bridging material (170), and the bridging material (170) is present at least in the region of the interspace (205) and adjoins the emission side (141) of the semiconductor chip (140) and the coupling side (151) of the cover element (150), wherein the radiation-conducting connection (175) is separate from the fastening connection (165) between the cover element (150) and the carrier (110).Method according to Claim 16, wherein the conducting of the heating process causes evaporation of the bridging material (170) and subsequent condensation of the bridging material (170) on the covering element (150) and the semiconductor chip (140) at least in the region of the interspace (205).Method according to Claim 16, wherein the carrying out of the thermal process brings about liquefaction of the bridging material (170) and subsequent wetting of the covering element (150) and of the semiconductor chip (140) with the bridging material (170) at least in the region of the interspace (205).The method of any of claims 16 to 18, wherein forming the attachment joint (165) comprises performing the thermal process.

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