OPTOELECTRONIC COMPONENT

Abstract

An optoelectronic component (100) is specified, which comprises: - a covering material (30) which covers at least one component area (101) to be protected, - an optoelectronic structure (10) which is provided for emitting and / or receiving electromagnetic radiation and is at least partially covered or uncovered by the encapsulation material (30), and - a stop device (20) which limits the wrapping material (30) to the at least one component area (101) to be protected, wherein the stop device (20) is interrupted in some areas.

Description

[0001] An optoelectronic component is specified, which can be a radiation-emitting and / or radiation-receiving component. An optically active region of the optoelectronic component intended for radiation emission and / or radiation reception can be configured with a large area.

[0002] To protect component parts such as wire connections, they can be embedded in a potting compound, for example, using a so-called "dam and fill" process. To simultaneously keep other component components that are not intended to be embedded free from the potting compound, a closed dam can be created to prevent the potting compound from penetrating component components that are intended to remain uncovered. However, radiation that strikes the dam can be directly reflected by the dam surface or re-emitted after penetrating the dam. This reflected radiation is disruptive, particularly if imaging is to be performed using secondary optics.

[0003] An alternative approach dispenses with a dam. The penetration of the potting compound is regulated, for example, by the fill quantity and local geometry, which is determined, for example, by the arrangement of the wire connections. However, this process is difficult to control and accordingly leads to greater fluctuations in the distribution of the potting compound.

[0004] One problem to be solved in this case is to provide an optoelectronic component with improved properties.

[0005] This problem is solved, among other things, by an optoelectronic component having the features of the independent claim.

[0006] Advantageous embodiments and further developments of the optoelectronic component are specified in the dependent claims.

[0007] According to at least one embodiment of an optoelectronic component, the component comprises an encapsulating material that covers at least one component region to be protected. For example, the at least one component region to be protected can comprise one or more connecting conductors of the optoelectronic component.

[0008] Furthermore, the optoelectronic component can comprise an optoelectronic structure designed to emit and / or receive electromagnetic radiation, for example, with a wavelength in the visible to infrared spectral range. For example, the optoelectronic structure comprises at least one optoelectronic semiconductor body designed to emit or receive electromagnetic radiation, for example, with a wavelength in the visible to infrared spectral range. The optoelectronic structure or semiconductor body can be designed to have a large area.

[0009] The at least one semiconductor body has, for example, a first and a second semiconductor region of different conductivity, wherein an active zone suitable for generating or detecting electromagnetic radiation can be arranged between the first and second semiconductor regions. The first and second semiconductor regions as well as the active zone can each be formed from one or more semiconductor layers. The semiconductor layers can be layers deposited epitaxially on a growth substrate. The growth substrate can remain in the semiconductor body or be at least partially removed.

[0010] For the semiconductor regions or semiconductor layers of the semiconductor body, materials based on arsenide, phosphide, or nitride compound semiconductors, for example, can be considered. "Based on arsenide, phosphide, or nitride compound semiconductors" in the present context means that the semiconductor regions or semiconductor layers are Al n Ga m In 1-n-m As, Al n Ga m In 1-n-m P or Al n Ga m In 1-n-m N, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can contain one or more dopants as well as additional components that determine the characteristic physical properties of Al. n Ga m In 1-n-m As-, Al n Ga m In 1-n-m P or Al n Ga m In 1-n-mN-materials do not change significantly. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, P, or N), even though these may be partially replaced by small amounts of other substances. Furthermore, silicon-based materials can also be considered for a radiation-receiving semiconductor body.

[0011] The optoelectronic structure can be at least partially covered or uncovered by the encapsulating material. The optoelectronic structure can be at least partially part of the at least one component region to be protected or at least partially part of a component region to be kept clear.

[0012] Furthermore, the optoelectronic component can have a stop device that limits the encapsulating material to the at least one component region to be protected. In particular, the stop device controls the flow behavior of the encapsulating material applied in a flowable state in order to achieve a desired contour of a flow front of the encapsulating material. Compared to a dam-free component, the distribution of the encapsulating material in the component provided with the stop device is subject to smaller fluctuations. For example, the encapsulating material can be formed by the stop device with precise contours that result in a defined, for example, regular shape, so that regions delimited by the encapsulating material also have precise contours or a defined, for example, regular shape.

[0013] According to at least one embodiment of the optoelectronic component, the stop device is interrupted in certain regions. Compared to a closed dam structure, interruptions in the stop device can advantageously reduce disruptive reflections and thus improve the optical properties, such as the contrast, of the component. Furthermore, the interrupted stop device can be manufactured in a shorter time and requires less material.

[0014] According to at least one embodiment of an optoelectronic component, this comprises: - a covering material that covers at least one component area to be protected, - an optoelectronic structure intended for emitting and / or receiving electromagnetic radiation and at least partially covered or uncovered by the encapsulation material, and - a stop device which limits the wrapping material to the at least one component area to be protected, wherein the stop device is interrupted in some areas.

[0015] Materials suitable for potting can be used for the encapsulation material. For example, the encapsulation material can contain silicone and / or plastic, such as a thermoplastic or thermoset material.

[0016] According to at least one embodiment or configuration, the stop device is not penetrated by the wrapping material at any interruptions. In particular, the stop device prevents the flowable wrapping material from spreading beyond the stop device.

[0017] According to at least one embodiment or configuration, the stop device is arranged laterally downstream of the optoelectronic structure. The encapsulating material can be frame-shaped and surround the optoelectronic structure circumferentially.

[0018] According to at least one embodiment or configuration, the optoelectronic structure has a basic shape with corners. For example, the basic shape is understood to mean a profile that the optoelectronic structure has in a plan view of the optoelectronic component. The stop device can be arranged at least at the corners of the optoelectronic structure. In particular, in transition zones in which, for example, a direction of the flow front changes, such as at the corners, the stop device ensures precise contours of the encapsulation material. For example, the optoelectronic structure can have a rectangular basic shape, although deviations from the basic shape are possible within the scope of usual manufacturing tolerances.

[0019] According to at least one embodiment or configuration, the stop device comprises at least two stop components separated from one another by an interruption. The different stop components can, for example, be assigned to different transition zones. The interrupted stop device, which is composed of separate stop components, offers greater design freedom compared to a closed dam, which must be drawn in one piece during production. A wide variety of geometries of the stop device or the component area to be protected can be realized.

[0020] According to at least one embodiment or configuration, at least one stop component comprises at least two stop structures. The stop structures can be separated from one another by a gap that is smaller than the interruption between the stop components. For a comparison of the size of the gap with the size of the interruption, for example, a lateral extension determined parallel to a main extension plane of the component can be used.

[0021] According to at least one embodiment or configuration, at least one stop component or stop structure has a round, semicircular, rectangular, wedge-shaped, or stepped cross-sectional profile. The different cross-sectional profiles influence, for example, the distribution of the encapsulating material within the component. For example, different cross-sectional profiles can be used for the stop components or stop structures of the stop device.

[0022] According to at least one embodiment or configuration, at least one stop component or stop structure has a straight or angled shape in plan view. For example, the stop component or stop structure with a straight shape can be arranged at a transition zone and extend transversely to the main extension directions of the optoelectronic structure. Furthermore, the stop component or stop structure with an angled shape can extend, for example, along a transition zone or corner of the optoelectronic structure.

[0023] According to at least one embodiment or configuration, at least one stop component or stop structure is a three-dimensional element that is printed, glued, dripped, or bonded. For example, the printed stop component or stop structure can be an element produced by additive manufacturing. Furthermore, the bonded stop component or stop structure can be a bond wire attached to bond pads. In particular, precise boundary lines or edges of the three-dimensional elements can contribute to the stopping function of the stop device. The flowable encapsulating material can spread slightly on flat surfaces up to these boundary lines or edges, but then stop at these boundary lines or edges due to the surface tension of the encapsulating material, thus enabling a defined distribution of the encapsulating material in the component.

[0024] According to at least one embodiment or configuration, the three-dimensional element is formed from at least one of the following materials: plastic, silicone, metal, ceramic, glass, semiconductor, for example, silicon. For example, different materials can be used for the stop components or stop structures of the stop device, and depending on the material, different manufacturing or fastening methods can also be used.

[0025] According to at least one embodiment or configuration, at least one stop component or stop structure is a recess. The at least one stop component or stop structure can be an etched recess or a recess created by laser ablation. In particular, precise boundary lines or edges of the recesses can contribute to the stop function of the stop device.

[0026] According to at least one embodiment or configuration, at least one stop component or stop structure consists of a surface modification to prevent surface wetting by the encapsulating material. For example, the surface modification can be a surface structuring, for example, by means of nanoimprint lithography, and / or a surface coating, for example, a fluorine-containing coating, and / or a material modification, for example, by means of chemical activation.

[0027] According to at least one embodiment or configuration, the optoelectronic component comprises a carrier substrate. The optoelectronic structure can be arranged on the carrier substrate. The carrier substrate can have at least part of the stop device. For example, at least part of the stop components or stop structures formed as three-dimensional elements or consisting of a surface modification can be arranged on the carrier substrate. Furthermore, at least part of the stop components or stop structures formed as depressions can be incorporated into the carrier substrate.

[0028] According to at least one embodiment or configuration, the optoelectronic structure comprises at least part of the stop device. At least part of the stop components or stop structures formed as three-dimensional elements or consisting of a surface modification can be arranged on the optoelectronic structure, for example, on a front side of the optoelectronic structure. Furthermore, at least part of the stop components or stop structures formed as depressions can be incorporated into the front side of the optoelectronic structure, for example, into the at least one semiconductor body of the optoelectronic structure. The front side of the optoelectronic structure can be located on a side of the optoelectronic structure facing away from the carrier substrate.The front side of the optoelectronic structure faces in particular a front side of the optoelectronic component, which can be provided for emitting and / or receiving radiation.

[0029] According to at least one embodiment or configuration, the optoelectronic component has at least one electrical connecting conductor connected to the optoelectronic structure. The at least one electrical connecting conductor provides an electrical connection to the optoelectronic structure. The at least one connecting conductor can be arranged in the region of an interruption in the stop device. In this embodiment or configuration, potential damage to the at least one electrical connecting conductor, which can be caused by the dam itself in a closed dam or during the application of the dam, can advantageously be avoided.

[0030] The optoelectronic component is particularly suitable for automotive, consumer and industrial applications.

[0031] Further advantages, advantageous embodiments and further developments emerge from the exemplary embodiments described below in conjunction with the figures.

[0032] They show: Fig. 1A is a schematic plan view of an intermediate stage of an optoelectronic component according to an embodiment and Fig. 1B is a schematic cross-sectional view of a section of the optoelectronic component according to the embodiment, Fig. 2A to 2F show schematic cross-sectional views of sections of optoelectronic components according to various embodiments, Fig. 3A to 3E are schematic plan views of sections of optoelectronic components according to various embodiments, Fig. 4A is a schematic plan view of an intermediate stage of an optoelectronic component according to an embodiment, Fig. 4B a schematic cross-sectional view of a section A of the optoelectronic component according to the embodiment and Fig. 4C a schematic plan view of section A, Fig. 5A is a schematic plan view of a section of an optoelectronic component according to an embodiment and Fig. 5B is a schematic cross-sectional view of a section of the optoelectronic component according to the embodiment in an intermediate stage, Fig. 6A is a schematic plan view of a section of an optoelectronic component according to an embodiment and Fig. 6B is a schematic cross-sectional view of a section of the optoelectronic component according to the embodiment in an intermediate stage, Fig. 7 a schematic plan view of a section of an optoelectronic component according to an embodiment, Fig. 8A and Fig. 8B are top view photographs of an optoelectronic component according to a first comparative example and Fig. 9 is a top view of an optoelectronic component according to a second comparative example.

[0033] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be provided with the same reference numerals. The illustrated elements and their relative sizes are not necessarily to scale; rather, individual elements may be exaggerated for clarity and / or clarity.

[0034] In connection with the Fig. 1A and Fig. 1B, an embodiment of an optoelectronic component 100 is described.

[0035] The optoelectronic component 100 comprises an optoelectronic structure 10 and a carrier substrate 50 on which the optoelectronic structure 10 is arranged. The optoelectronic structure 10 can be formed over a large area.

[0036] Furthermore, the optoelectronic structure 10 can comprise at least one optoelectronic semiconductor body 1 and, like the optoelectronic semiconductor body 1, can be provided for emitting and / or receiving electromagnetic radiation on a front side 10A. The front side 10A is arranged, for example, on a side facing away from the carrier substrate 50 and faces a front side 100A of the component 100.

[0037] As described above, the at least one semiconductor body 1 can have a first and a second semiconductor region of different conductivity, wherein an active zone suitable for generating or detecting electromagnetic radiation can be arranged between the first and second semiconductor regions (not shown). For the semiconductor regions or semiconductor layers of the semiconductor body 1, materials based on arsenide, phosphide, or nitride compound semiconductors, for example, and in the case of a radiation-receiving semiconductor body 1, materials based on silicon can also be considered (see the above explanations).

[0038] For example, during operation, the optoelectronic structure 10 emits and / or detects electromagnetic radiation with a wavelength in the visible to infrared spectral range.

[0039] The optoelectronic structure 10 has a basic shape with four corners 10B.

[0040] The optoelectronic component 100 further comprises a stop device 20 arranged on the carrier substrate 50. The stop device 20 is interrupted at certain points and has a plurality of stop components 22. In this case, two directly adjacent stop components 22 are separated from one another by an interruption 21. The stop device 20 is arranged laterally downstream of the optoelectronic structure 10, with exactly one stop component 22 being arranged at each corner 10B of the optoelectronic structure 10. "Laterally downstream" means, for example, following in at least one lateral direction, wherein the at least one lateral direction runs parallel to a main extension plane of the component 100, which is defined by a first lateral direction L1 and a second lateral direction L2.

[0041] The stop components 22 are three-dimensional elements that are printed or glued onto the carrier substrate 50, for example, by means of 3D printing. At least one of the following materials is suitable for the stop components 22: plastic, silicone, metal, ceramic, glass, semiconductors, for example, silicon. The stop components 22 each have an angled shape in plan view (see FIG. Fig. 1A), which resembles an "L". Furthermore, the stop components 22 each have a semicircular cross-sectional profile (cf. Fig. 1B).

[0042] By means of the stop device 20, at least one by means of a wrapping material 30 (cf. Fig. 2A to 2F), the component region 101 to be protected is separated from at least one component region 102 to be kept free from the encapsulation material 30. For example, the component region 102 to be kept free can be located within the component region 101 to be protected. However, it is also possible for the component region 101 to be protected to be located within the component region 102 to be kept free. The optoelectronic structure 10 can be part of the component region 102 to be kept free and thus uncovered by the encapsulation material 30. However, it is also possible for the optoelectronic structure 10 to be at least partially part of the component region 101 to be protected and thus at least partially covered by the encapsulation material 30.

[0043] The stop device 20 limits the enveloping material 30 to the at least one component region 101 to be protected. In particular, the stop device 20 controls a flow behavior of the enveloping material 30 applied in a flowable state in order to achieve a desired contour of a flow front of the enveloping material 30.

[0044] Compared to a like in the Fig. 8A and Fig. In the component 100 shown in Figure 8B with a closed dam 25, the interruptions 21 in the stop device 20 can reduce disturbing reflections R and thus improve the optical properties, such as the contrast, of the component 100. Furthermore, the interrupted stop device 20 can be manufactured in a shorter time and requires less material.

[0045] Compared to a like in Fig. In the dam-free component 100 shown in Figure 9, the distribution of the enveloping material 30 of the component 100 provided with the stop device 20 is subject to minor fluctuations. The stop device 20 can form the enveloping material 30 with precise contours that result in a defined, for example, regular shape, so that regions such as the at least one component region 102 to be kept free, which are delimited by the enveloping material 30, also have precise contours or a defined, for example, regular shape (see Figure 9). Fig. 5A, Fig. 6A and Fig. 7).

[0046] For electrically contacting the optoelectronic structure 10, the optoelectronic component 100 has a plurality of electrical connecting conductors 40 on the carrier substrate 50. The plurality of electrical connecting conductors 40 are part of the component region 101 to be protected, wherein the electrical connecting conductors 40 are covered by the encapsulation material 30 in the finished component 100 (see FIG. Fig. 5A, Fig. 6A and Fig. 7). However, it is also possible that the plurality of electrical connecting conductors 40 are at least partially part of the component area 102 to be kept free and are thus at least partially uncovered by the enveloping material 30. The electrical connecting conductors 40 are arranged in the area of ​​the interruptions 21. This can prevent potential damage to the electrical connecting conductors 40, which could occur in the case of a Fig. 8A and Fig. 8B, which can be caused by the dam 25 itself or when applying the dam 25, can advantageously be avoided.

[0047] In connection with the Fig. 2A to 2F describe further possible cross-sectional profiles of stop devices 20 or stop components 22.

[0048] As from Fig. As can be seen from Figure 2A, the stop device 20 or its stop components 22 can have a rectangular cross-sectional profile. The wrapping material 30 is stopped at an upper edge 22B of each stop component 22. The upper edge 22B is arranged at a transition from an upper side 22A of the stop component 22 to a side surface 22C of the stop component 22 facing the wrapping material 30.

[0049] As in the Fig. 2B and Fig. 2C, the stop device 20 or its stop components 22 can have a stepped cross-sectional profile. In this case, a region of the side surface 22C can be laterally set back, wherein the region shown in Fig. 2B shown embodiment is an upper area and in the case of Fig. 2C is a lower region. Here, too, the wrapping material 30 is stopped at the upper edge 22B of the stop components 22. However, the different cross-sectional profiles have different effects on the flow behavior and, accordingly, on the contour of the wrapping material 30. The contour of the wrapping material 30 can therefore be controlled by the cross-sectional profile.

[0050] As in the Fig. As shown in Figures 2D to 2F, the stop device 20 or its stop components 22 can have a wedge-shaped cross-sectional profile. The side surface 22C can be inclined at least in some regions, so that in the inclined region it does not form a right angle with an upper side 50A of the carrier substrate 50. Here, too, the encapsulating material 30 is stopped at the upper edge 22B of the stop components 22, wherein the contour of the encapsulating material 30 can be controlled by the cross-sectional profile.

[0051] In principle, it can happen that the enveloping material 30 wets or floods the upper side 22A of the stop component 22 if too much material is poured in. In this case, a Fig. 2A to 2F, the sharp edge at the transition from the top side 22A to another, vertical side surface 22C', which faces the area 102 to be kept clear, may prove advantageous. However, other configurations are also possible for the side surface 22C'. For example, the side surface 22C' may be tilted or have a spherical, i.e., convex or concave, angled, or stepped shape.

[0052] In connection with the Fig. 3A to 3E describe further possible embodiments of stop devices 20, the stop components 22 of which each have an angled shape.

[0053] As from Fig. As can be seen from Figure 3A, the stop components 22 can each have an L-shape. On the side surface 22C, the stop components 22 can each have a plurality of, for example, semicircular indentations 22D.

[0054] As can be seen from the Fig. 3B and Fig. 3C, the stop components 22 can each have an L-shape with two transversely extending legs S1 and S2, wherein the legs S1, S2 in the case of the Fig. 3B illustrated embodiment with increasing distance from a convergence point K wider and in the case of Fig. 3B illustrated embodiment become narrower with increasing distance from the convergence point K.

[0055] As from Fig. 3D, the stop components 22 can each have more than two legs S1, S2, S3 running transversely to each other and approximately an arc shape.

[0056] As from Fig. As can be seen from Figure 3E, the stop components 22 can each have a T-shape with two legs S1, S2 running perpendicular to each other.

[0057] The stop components 22 can each be made finer than the one shown in the Fig. 8A and Fig. 8B. They can serve, for example, to enhance a capillary effect so that the stop components 22 are wetted more quickly, or to anchor the encapsulating material 30. After encapsulation, they can serve as an orientation mark, for example, during assembly and adjustment of optical elements.

[0058] In connection with the Fig. 4A, Fig. 4B and Fig. 4C, a further embodiment of an optoelectronic component 100 is described. In this embodiment, the stop device 20 has different stop components 221, 222, 223, 224 arranged at different corners 10B of the optoelectronic structure 10. The configurations of the stop components 221, 222, 223, 224 described below are to be regarded as exemplary and can be modified according to the other embodiments.

[0059] The first stop component 221 has an angled or L-shape and a plurality of stop structures 23, wherein two directly adjacent stop structures 23 are separated from one another by a gap 24. The gaps 24 can each be smaller than the interruptions 21 between the stop components 221, 222, 223, 224, wherein, for example, a lateral extent a1 of an interruption 24 defined along the second lateral direction L2 is smaller than a lateral extent a2 of the interruption 21 defined along the second lateral direction L2. For example, the stop structures 23 can be three-dimensional elements with a round cross-sectional profile. The stop structures 23 can, for example, be drip-deposited onto the carrier substrate 50 and formed from silicone.

[0060] The second stop component 222 has a straight shape and runs transversely to the main extension directions of the optoelectronic structure 10, wherein the main extension directions run parallel to the lateral directions L1, L2. For example, the second stop component 222 can be a three-dimensional element with, for example, a Fig. 1B to 2F.

[0061] The third stop component 223 has an angled or triangular shape with three legs S1, S2, S3. For example, the third stop component 223 can be a three-dimensional element with, for example, a Fig. 1B to 2F.

[0062] The fourth stop component 224 has a straight shape and runs transversely to the main extension directions of the optoelectronic structure 10. For example, the fourth stop component 224 is a three-dimensional element which, as shown in the Fig. 4B and Fig. 4C may consist of a bonding wire 27 attached to bond pads 26.

[0063] Furthermore, the optoelectronic component 100 can have all the features and advantages described in connection with the further embodiments.

[0064] In connection with the Fig. 5 to 7, the stop function of various stop devices 20 or stop components 22 is explained in more detail.

[0065] The Fig. 5A and Fig. Component 100 shown in Figure 5B can be Fig. 1A, wherein the stop components 22 of the stop device 20 are a as in connection with Fig. 2A. When the flowable encapsulating material 30 is applied to the area 101 to be protected, for example by means of casting, it is generally stopped at the upper edge 22B of the stop components 22. The flowable encapsulating material 30 can spread slightly on flat surfaces of the carrier substrate 50 up to the upper edges 22B, but then stop at the upper edges 22B due to the surface tension of the encapsulating material 30. In this case, a defined distribution of the encapsulating material 30 with precise contours can be realized, especially in the corners or transition zones where, for example, a direction of the flow front changes.

[0066] Materials suitable for production by encapsulation are suitable for the encapsulation material 30. For example, the encapsulation material 30 can contain silicone and / or plastic, such as a thermoplastic or thermoset material. Furthermore, the encapsulation material 30 can be mixed with particles, such as reflective and / or wavelength-converting and / or absorbing particles.

[0067] The Fig. 6A and Fig. Component 100 shown in Figure 6B can be as shown in Fig. 1A, wherein the stop components 22 of the stop device 20 are recesses in the carrier substrate 50. The stop components 22 can be produced, for example, by etching or laser ablation and have a rectangular cross-sectional profile. When the flowable encapsulating material 30 is applied to the area 101 to be protected, for example by potting, it is generally stopped at the upper edge 22B of the stop components 22. In this case, a defined distribution of the encapsulating material 30 can be realized, especially in the corners. Furthermore, the encapsulating material 30 can be formed with precise contours.

[0068] The Fig. Component 100 shown in Figure 7 can be as shown in Fig.1A, wherein the stop components 22 of the stop device 20 consist of surface modifications to prevent wetting by the encapsulating material 30. For example, the surface modifications can be surface structuring in the nanometer range, for example by means of nano-imprint lithography, and / or surface coatings, for example fluorine-containing coatings, and / or material modifications, for example by means of chemical activation. When the flowable encapsulating material 30 is applied to the area 101 to be protected, for example by means of casting, it is generally stopped at the outer edge 22F of the stop components 22. In this case, a defined distribution of the encapsulating material 30 can be realized, especially in the corners. Furthermore, the encapsulating material 30 can be formed with precise contours.

[0069] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. List of reference symbols 1 optoelectronic semiconductor body 10 optoelectronic structure 10A front 10B Corner 20 Stop device 21 Interruption 22, 221, 222, 223, 224 stop component 22A top 22B top edge 22C side surface 22C' side surface 22D indentation 22F outer edge 23 Stop structure 24 space 25 closed dam 26 Bondpad 27 Bonding wire 30 Wrapping material 40 electrical connecting conductor 50 carrier substrate 50A top 100 optoelectronic components 100A front 101 component area to be protected 102 component area to be kept clear a1, a2 lateral distance A section K Convergence point L1 first lateral direction L2 second lateral direction R Reflection S1, S2, S3 legs

Claims

[1] Optoelectronic component (100) comprising - a covering material (30) which covers at least one component area (101) to be protected, - an optoelectronic structure (10) which is provided for emitting and / or receiving electromagnetic radiation and is at least partially covered or uncovered by the encapsulation material (30), and - a stop device (20) which limits the wrapping material (30) to the at least one component area (101) to be protected, wherein the stop device (20) is interrupted in some areas. [2] Optoelectronic component (100) according to the preceding claim, wherein the encapsulating material (30) does not penetrate the stop device (20) at interruptions (21). [3] Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) comprises at least one optoelectronic semiconductor body (1). [4] Optoelectronic component (100) according to one of the preceding claims, wherein the stop device (20) is arranged laterally downstream of the optoelectronic structure (10). [5] Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) has a basic shape with corners (10B) and the stop device (20) is arranged at the corners (10B). [6] Optoelectronic component (100) according to one of the preceding claims, wherein the stop device (20) has at least two stop components (22, 221, 222, 223, 224) separated from one another by an interruption (21). [7] Optoelectronic component (100) according to the preceding claim, wherein at least one stop component (22, 221, 222, 223, 224) has at least two stop structures (23) which are separated from one another by a gap (24), wherein the gap (24) between the stop structures (23) is smaller than the interruption (21) between the stop components (22, 221, 222, 223, 224). [8] Optoelectronic component (100) according to one of the two preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) has a round, semicircular, rectangular, wedge-shaped or step-shaped cross-sectional profile. [9] Optoelectronic component (100) according to one of the two preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) has a straight or angled shape in plan view. [10] Optoelectronic component (100) according to one of the two preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) is a three-dimensional element that is printed, glued, dripped or bonded. [11] Optoelectronic component (100) according to the preceding claim, wherein the three-dimensional element is formed from at least one of the following materials: plastic, silicone, metal, ceramic, glass, semiconductor. [12] Optoelectronic component (100) according to one of claims 6 to 11, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) is a recess. [13] Optoelectronic component (100) according to the preceding claim, wherein the stop component (22, 221, 222, 223, 224) or stop structure (23) is a recess etched or produced by laser ablation. [14] Optoelectronic component (100) according to one of claims 6 to 13, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) consists of a surface modification for preventing surface wetting by the encapsulation material (30), wherein the surface modification comprises a surface structuring and / or surface coating and / or material change. [15] Optoelectronic component (100) according to one of the preceding claims, comprising a carrier substrate (50), wherein the carrier substrate (50) has at least part of the stop device (20). [16] Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) comprises at least part of the stop device (20). [17] Optoelectronic component (100) according to one of the preceding claims, which has at least one electrical connection conductor (40) connected to the optoelectronic structure (10), wherein the at least one electrical connection conductor (40) is arranged in the region of an interruption (21) of the stop device (20).

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