Sensor component with a package for multi-sensor chips and manufacturing process for it

Abstract

An integrated sensor device is described. According to one embodiment, the sensor device comprises a chip carrier, a first semiconductor chip, and a second semiconductor chip, wherein either both are arranged on the chip carrier or (alternatively) the second semiconductor chip is arranged on the chip carrier and the first semiconductor chip is arranged on the second semiconductor chip (chip-on-chip). The sensor device further comprises a first sensor element integrated in the first semiconductor chip and a second sensor element integrated in the second semiconductor chip, as well as a housing formed by a potting compound, which has an opening. Both the first sensor element and the second sensor element are located within the opening so that they can interact with the atmosphere surrounding the sensor device.

Description

TECHNICAL AREA

[0001] The present description concerns a package (chip housing) for a semiconductor device with several integrated sensors. BACKGROUND

[0002] Many sensor devices are now designed as so-called System-in-Package (SiP) devices, meaning they contain a chip within a single package that integrates both the sensor element and other electronic circuitry. Many integrated sensors are so-called smart sensors (also known as intelligent sensors), which, in addition to the sensor element (sensitive to a specific environmental parameter such as pressure, temperature, carbon monoxide, or the like), also include other electronic circuitry that can process the sensor signal (e.g., amplify, digitize, filter, etc.) and potentially communicate with other electronic units.

[0003] Several concepts for the fabrication of integrated sensors are known. One example is silicon-integrated micromechanical structures, so-called MEMS (microelectromechanical systems). Another example is sensor elements fabricated using SOI (silicon-on-insulator) or SOS (silicon-on-sapphire) technology, which may contain, for example, piezoresistive elements. SiCOI (silicon-on-insulator) technologies based on SiC (silicon carbide) are also known for the fabrication of integrated sensor elements for pressure measurement. In the following, sensor elements integrated into chips will be referred to as sensor chips.

[0004] MEMS sensors can be designed for a wide variety of applications. There are MEMS sensors for measuring pressure (in a gas atmosphere), air quality, various chemical elements, and much more. Properties of the medium surrounding the sensor are referred to as environmental parameters. To measure an environmental parameter, the sensor element must be in physical contact with the surrounding medium. This means that the sensor chip cannot be completely encapsulated in potting compound like other integrated circuits (ICs), but must have an opening that allows physical contact between the sensor element and the surrounding medium (usually a gas). Consequently, the packaging of an integrated sensor must meet different requirements than the packaging of conventional semiconductor chips.Particularly with MEMS, there is a risk of introducing mechanical stresses into the sensor chip, which can negatively affect its performance. Furthermore, for sensor devices with multiple sensors, a space-saving arrangement may be desirable. Publications DE 10 2014 112 495 A1, DE 10 2022 122 821 A1, and DE 10 2020 117 857 A1 also address sensor packaging. SUMMARY

[0005] Claim 1 relates to a sensor component with multiple integrated sensor chips. Claim 7 relates to a manufacturing method for a sensor component. Various embodiments and further developments are the subject of the dependent claims.

[0006] According to one embodiment, the sensor assembly comprises a chip carrier, a first semiconductor chip, and a second semiconductor chip, wherein the second semiconductor chip is arranged on the chip carrier and the first semiconductor chip is arranged on the second semiconductor chip (chip-on-chip). The sensor assembly further comprises a first sensor element integrated into the first semiconductor chip and a second sensor element integrated into the second semiconductor chip, as well as a housing formed by a potting compound, which has an opening. Both the first sensor element and the second sensor element are located within the opening, allowing them to interact with the atmosphere surrounding the sensor assembly.

[0007] According to one embodiment, the manufacturing process comprises bonding the first semiconductor chip to the second semiconductor chip and mounting the second semiconductor chip (together with the first semiconductor chip) onto the chip carrier, wherein a first sensor element is integrated into the first semiconductor chip and a second sensor element is integrated into the second semiconductor chip. The process further comprises manufacturing a chip package from potting compound using a film-assisted molding (FAM) process such that an opening remains in the chip package, and the first and second sensor elements are located in the opening and can consequently interact with the atmosphere surrounding the semiconductor chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The invention is explained in more detail below with reference to the examples shown in the figures. The illustrations are not necessarily to scale, and the embodiments shown are not limited to the aspects depicted. Rather, emphasis is placed on illustrating the principles underlying the embodiments. The figures show: Fig. Figure 1 illustrates an example of a sensor component with multiple sensor chips arranged on a chip carrier. Fig. Figure 2 illustrates another example of a sensor component with multiple sensor chips arranged on a chip carrier. Fig. 3A-D (together Fig. 3) describe, using a sequence of cross-sectional views, an embodiment of an improved method for manufacturing a sensor component with several sensor chips arranged on a chip carrier. Fig. Figure 4 illustrates a variant of the exemplary embodiment from Fig. 3. Fig. Figure 5 illustrates, using a schematic top view, a further embodiment of a sensor component with several sensor chips arranged on a chip carrier. Fig. 6 and Fig. 7 show modifications / variants of the example from Fig. 5. Fig. Figure 8 shows another embodiment in which a sensor chip is mounted on another chip using chip-on-chip assembly. DETAILED DESCRIPTION

[0009] Fig. Figure 1 illustrates a possible implementation of a sensor device with multiple sensor chips capable of measuring different physical quantities. In the example shown, two sensor chips (sensor dies) 21 and 22, as well as another semiconductor chip (semiconductor die) 23, are arranged on a substrate (chip carrier 10). The chips can be mounted, for example, on a structured metallization layer of the chip carrier (e.g., by soldering). The semiconductor chip 23 is, for example, an application-specific integrated circuit (ASIC) designed (among other things) to process sensor signals from the sensor chips 21 and 22.

[0010] Sensor chip 21 has an integrated sensor element 210, which is sensitive to pressure, for example. Sensor chip 22 has a sensor element 220, which can be sensitive to humidity, for example. In the example shown, the sensor element 210 is protected by a protective layer 211. The protective layer 211 is, for example, a protective gel that is able to transmit the pressure of the surrounding atmosphere to the sensor element 210.

[0011] Chips 21, 22, and 23 are electrically contacted in the conventional manner using bond wires 15. Corresponding bond pads on the top surface of two chips can be connected by a bond wire. Furthermore, bond pads on the top surface of the chips can be connected to corresponding bond pads on the chip carrier 10 (part of the metallization layer of the chip carrier 10) by bond wires. In the illustrated example, the chip carrier has a metallization layer on both sides, and parts of the upper metallization layer can be connected to parts of the lower metallization layer 11 via vias. Fig. Figure 1 is to be understood as a schematic sketch.

[0012] To protect sensor chips 21 and 22 in particular from environmental influences (such as dust particles), the chips on the top of the chip carrier are protected by a protective cover 12, which together with the chip carrier 10 forms a chip housing. The protective cover 12 has an opening 13 that allows sensor chips 21 and 22 inside the housing to interact with the surrounding atmosphere.

[0013] How to in Fig. As can be seen in Figure 1, the protective cover 12 offers insufficient protection. The bond wires 15 themselves are not protected. Therefore, such packaging concepts are unsuitable for a wide range of applications where a higher degree of robustness is required.

[0014] Fig. Figure 2 illustrates another example of an integrated sensor device 2, in which a sensor chip 21 is arranged chip-on-chip (CoC) on another chip 23. The chip 23 is, for example, a silicon-based semiconductor chip (e.g., an ASIC) and is mounted on a chip carrier 10 in a known manner. In the illustrated example, a lead frame can be used as the chip carrier. In certain variants, the chip carrier 10 can also be a multi-layer substrate. Chip-on-chip technology is a known technique in which one chip is mounted directly onto another chip. Chip-on-chip technology thus differs from other concepts in which, for example, two or more chips are mounted side by side on a lead frame.

[0015] The sensor chip 21 has a sensor element 210 on its upper surface, which is designed to interact with the medium surrounding the chip (e.g., air or another gas) and thereby measure a property (e.g., a physical or chemical parameter) of the medium. That is, the sensor element 210 generates a signal containing information about the desired property. As mentioned, the sensor element 210 can be a microelectromechanical system (MEMS). MEMS are well-known sensor elements in themselves and are therefore not discussed in detail here. MEMS can be used, for example, to measure parameters such as the (static) pressure of the surrounding medium. Other MEMS sensor elements can measure, for example, sound pressure, the presence of a substance (e.g., ozone, carbon monoxide, nitrogen dioxide, ammonia, etc.), or the concentration of a substance.

[0016] The underside surface of sensor chip 21 is fully bonded to the underlying chip 23 (e.g., by soldering or gluing). Electrical connections between sensor chip 21 and the underlying chip 23 are provided by bond wires 15. This type of connection is known as chip-to-chip bonding. The bond wires connect corresponding contact pads on the surfaces of sensor chip 21 and the underlying chip 23.

[0017] The semiconductor chip 23 is connected to the chip contacts (e.g., pins, solder balls, etc.) of the conductor frame (chip carrier 30) by means of bond wires 16. The chip 10 is encapsulated in a molding process with a potting compound 31 (mold compound). After curing, the potting compound 31 forms the chip package, which, however, only partially surrounds the chip 23 for sensor applications.

[0018] The potting compound 31 (the chip housing) has an opening (cavity) in the area where the sensor chip 21 is located. It should be noted that during manufacturing, the chip 23 is first mounted onto the chip carrier 10 (using a relatively soft adhesive layer), and then the electrical connections between the chip 23 and the conductor frame are made by wire bonding (bonding wires 16). Subsequently, the chip housing 31 with the cavity is manufactured.

[0019] For example, the chip package is manufactured using film-assisted molding (FAM). This technology allows for the virtually pressureless encapsulation of sensitive microelectronic components with epoxy-based molding compounds (e.g., potting compound 31). FAM and other suitable molding processes are well-known and are therefore not described in detail here.

[0020] Only after the chip housing has been manufactured is the sensor chip 21 mounted within the cavity on the underlying semiconductor chip 23 and electrically contacted by means of the bond wires 15. Depending on the application, the cavity can then remain open or be filled with a gel 211. For example, in pressure sensors, the sensor element is often covered with a soft potting compound such as a gel (silicone gel). This soft potting compound must be soft enough—even after curing—to transfer the ambient pressure to the sensor element 210. The purpose of filling the cavity with a soft potting compound is to protect the underlying chip from (dirt) particles and corrosion. In the case of a chemical sensor (gas sensor) that detects the presence of a specific gaseous substance (e.g., carbon monoxide), the cavity must, of course, not be covered. Suitable soft potting compounds differ significantly from the molding compound (e.g.,Epoxy resin), which is used for manufacturing the chip housing and which hardens completely (whereas the soft potting compound such as silicone gel remains soft).

[0021] The sensor device 2 is relatively complex to manufacture; in particular, the chip-to-chip bonding (after the chip package has been manufactured) and the separate wire bonding of the sensor chip increase the overall cost of the sensor device. Certain geometric parameters must be maintained for the casting process (e.g., FAM) used to manufacture the chip package. For example, minimum distances a1 and a2 must be maintained between the bond pads arranged on the chip 23 and the side wall of the cavity (see [reference]). Fig. 2) Furthermore, minimum distances a3 and a4 must be maintained between the chip edge of chip 23 and the bond pads, as well as above the bond wires 16 to the top of the housing. The side walls of the cavity cannot be manufactured with arbitrary steepness, but require a certain minimum angle θ. An angle of θ = 0 would correspond to a right angle between the chip surface and the side wall of the cavity in the example shown. Given the technology-related design parameters (e.g., a1-a4, θ) that must be adhered to, the following applies to multisensor systems (with several individual sensor chips): Fig. The concept shown is very complex and requires relatively large chip packages.

[0022] The following will be based on the Fig. 3 (3A-3D) describes an embodiment of an improved method for manufacturing a sensor device with multiple sensor chips.

[0023] In the first part of the procedure (see Fig. 3A) Two or more sensor chips, and optionally additional chips, are conventionally mounted on a chip carrier 10 (circuit board) and contacted by means of bond wires 15. In the illustrated example, two sensor chips 21 and 22 are arranged on the circuit board. The sensitive areas of the sensor chips, i.e., the sensor elements, are located in an edge region of the sensor chips. In the illustrated example, the sensor element 210 is located in an edge region of sensor chip 21, and the sensor elements 221 and 222 are located in an edge region of sensor chip 22. The sensor elements are located in opposite edge regions of adjacent sensor chips. The sensor chips (or one of them) can also have application-specific circuits, for example, for processing and digitizing the sensor signals supplied by the sensor elements and / or one or more interfaces for communication with other (external) circuits.Sensor elements 210, 221, and 222 can measure various physical or chemical parameters. For example, sensor element 210 is a pressure-sensitive sensor element, sensor element 221 is a humidity-sensitive sensor element, and sensor element 22 is a temperature sensor element.

[0024] In the next part of the procedure (see Fig. 3B) The chips arranged on the chip carrier 10 are encapsulated in a hard potting compound to produce the chip housing, wherein a single opening (cavity) is provided in the housing, which extends over the edge regions of (at least) two sensor chips, such that the sensor elements of several sensor chips lie in the opening. Within the opening, the sensor chips (in particular the sensor elements integrated therein) are not covered by the potting compound, whereas the bond wires 15 are completely encapsulated.

[0025] To manufacture the chip package, a Fig. Figure 3B shows the use of a FAM process. In this case, a molding tool coated with a film 51 is used, whereby during the molding process, part 510 of the film directly contacts and covers the surface of the sensor chips 21 and 22 (and the sensor elements 210, 221, 222), ensuring that the covered part of the chip surface remains free and is not covered with potting compound 31. That is, part 510 of the film 51 defines the aforementioned opening. Fig. Figure 3C shows the sensor device after the potting compound 31, which forms the chip housing, has cured. The area between two opposing side faces of adjacent chips is also filled with potting compound (see Figure 3). Fig. 3C, area 31').

[0026] In the Fig. In the 3D representation of the process, one or more sensor elements are covered by a soft gel layer. In the example shown, the sensor element 210 of the chip 21 is protected by a layer 210 of silicone gel, whereas the other sensor elements 221 and 22 remain uncovered.

[0027] The in Fig. The embodiment shown in Figure 4 is a modification of the example from Fig. 3D. While in the example from Fig. 3D the space between two adjacent chips is filled with potting compound 31' up to the chip surface (i.e. the surface of the potting compound part 31' is flush with the surface of the chips), protrudes in the variant made of Fig. 4. The potting compound portion 31' between the two adjacent chips 21 and 22 forms a barrier between the chip surfaces. The portion 31' extending beyond the chip surface acts as a barrier, preventing the gel forming the gel layer 211 from flowing onto the adjacent chip 22. This simplifies the handling of the device during manufacturing.

[0028] Fig. Figure 5 illustrates a variant of the embodiment using a schematic top view. Fig. 3D. Two sensor chips 21 and 22 are mounted on a leadframe (chip carrier 10). An edge region of sensor chip 21 has the sensor element 210 (in Fig. 5 at the right edge of chip 21), and an edge region of sensor chip 22 has sensor elements 221 and 222 (in Fig. 5 on the left edge of the chip 22). For example, the sensor element 210 is used for pressure measurement, the sensor element 221 for humidity measurement and the sensor element 222 for measuring a gas concentration such as CO2.

[0029] The sensor chips 21 and 22 are electrically connected to each other via bond wires 15' (chip-to-chip bonding), and sensor 21 is electrically connected to corresponding chip contacts (e.g., solder pads) of the chip carrier 10 via bond wires 15. The chip package is constructed as described above with reference to Fig. 3 described (encapsulation of the chips in a potting compound 31), wherein the housing has an opening O1 (cavity) so that the sensor elements 210, 221, 222 can interact freely with the atmosphere surrounding the chip.

[0030] Fig. Figure 6 illustrates a variant of the example from Fig. 5, wherein a total of six chips are arranged on a chip carrier and the chip package has two openings / cavities. The sensor chips 21, 22, 24, 25, and 26 each have a sensor element (e.g., sensor elements 210 and 221), each represented as hatched rectangles. The sensor chip 22 has a second sensor element 222. The chip 23 can be an ASIC and, for example, preprocess the sensor signals from the other chips and transmit the information contained in the sensor signals to other circuits. The chips are connected to the chip contacts of the chip carrier 10 by means of bond wires 15. The chip-to-chip bond wires are designated 15' as in the previous example. The sensor elements 210 and 221 are located within the opening O1. The sensor element 222 of the sensor chip 22 and the sensor elements of the chip 24, 25 and 26 are located in the opening O2.

[0031] Fig. Figure 7 illustrates another variant of the example from Fig. 5, wherein a single central opening extends across four substantially parallel chips. In the illustrated example, the semiconductor chips (semiconductor dies) 21, 22, 23, and 24 have a relatively large aspect ratio (e.g., length / width > 3). Each chip has one or more sensor elements (in Fig. 7 (gray hatched). The semiconductor chips are so narrow that the sensor elements are necessarily located close to the edge of the respective chips (in the edge region along the long side). The bond wires are labeled 15 and 15', as in the previous examples.

[0032] Fig. Figure 8 illustrates a further embodiment which is a modification of the example from Fig. It can be viewed in 3D. Unlike in the example from Fig. In the 3D model, not both sensor chips 21 and 22 are mounted on the chip carrier 10; instead, only chip 22 is mounted on the chip carrier, while chip 21 is mounted on top of chip 22 (chip-on-chip packaging). The sensor element 210 of chip 21 can be electrically connected to chip 22, for example, via a through-silicon via. In the illustrated example, both chips are connected to corresponding chip contacts of the chip carrier 10 via bond wires 15. The sensor element 210 of sensor chip 21 is located in the edge region (near the right edge) of the chip. The sensor element 220 of the sensor chip 22 is located in a central surface area of ​​the chip 22, but close to the chip 21. Both sensor elements 210 and 222 are located in the (single) opening O1 of the chip package, which can be manufactured, for example, using a FAM process (as described in relation to Fig. 3 described).

[0033] The embodiments described here are summarized below. It should be understood that the following is not a complete, but merely an exemplary summary of the technical features of the embodiments described here.

[0034] One embodiment relates to a sensor component comprising the following: a chip carrier, a first semiconductor chip, and a second semiconductor chip. The two semiconductor chips are arranged on the chip carrier (see, e.g., [reference]). Fig. 3-7). Alternatively, the second semiconductor chip can be arranged on the chip carrier and the first semiconductor chip on the second semiconductor chip (chip-on-chip) (see Fig. 8) A first sensor element is integrated into the first semiconductor chip, and a second sensor element is integrated into the second semiconductor chip. The sensor element is further enclosed in a housing formed by a potting compound. The housing has an opening designed such that both the first and second sensor elements are located within the opening, allowing the sensor elements to interact with the atmosphere surrounding the sensor assembly.

[0035] In one embodiment, the first and second sensor elements can be sensitive to different physical parameters. The following physical parameters are possible: temperature, pressure, humidity, gas concentration of one or more gases or gas mixtures.

[0036] In one embodiment, the sensor element has bond wires for electrically connecting the first semiconductor chip and / or the second semiconductor chip to corresponding chip contacts of the chip carrier, wherein the bond wires are completely encapsulated in the potting compound. Other bond wires can electrically connect the first semiconductor chip to the second semiconductor chip (chip-to-chip bonding, see e.g. Fig. 5-7)

[0037] In one embodiment, the top surfaces of the first semiconductor chip and one top surface of the second semiconductor chip are partially covered with the potting compound. However, the sensor elements integrated into the semiconductor chips remain exposed. The bottom surfaces of the semiconductor chips are connected to the chip carrier.

[0038] In one embodiment, the space between the first and second semiconductor chips is filled with potting compound. Particularly in the area of ​​the space between the semiconductor chips, the potting compound can extend beyond the two semiconductor chips (see Fig. 4).

[0039] In one embodiment, the first sensor element and / or the second sensor element is covered with a gel layer (e.g., a silicone gel) and thus protected from adverse environmental influences. In the aforementioned example, where part of the potting compound extends beyond the top surface of the semiconductor chips, this portion of the potting compound forms a kind of barrier that prevents the gel layer protecting one sensor element from flowing onto the adjacent semiconductor chip.

[0040] Further embodiments relate to a method for manufacturing a sensor component with multiple sensor elements. In one embodiment, the method comprises mounting a first semiconductor chip and a second semiconductor chip onto a chip carrier, wherein a first sensor element is integrated into the first semiconductor chip and a second sensor element is integrated into the second semiconductor chip. The method further comprises manufacturing a chip housing from potting compound using a film-assisted molding (FAM) process. The mold is designed such that an opening remains in the chip housing, and the first and second sensor elements are located in the opening and can consequently interact with the atmosphere surrounding the semiconductor chips.

[0041] In a further (optional) step, a gel layer can be applied to one (or both) of the semiconductor chips, covering the first and / or second sensor element. The necessary barrier for the gel layer can be achieved through a suitable mold design. Any wire bonding process naturally takes place before the FAM process.

[0042] The exemplary embodiments described here are summarized below. It should be understood that this is not a complete list of the technical features of the exemplary embodiments, but merely an illustrative summary.

[0043] A first embodiment relates to a sensor component comprising a chip carrier, a first semiconductor chip, and a second semiconductor chip, wherein either both are arranged on the chip carrier (see Fig. 3D and Fig. 4-7) or (alternatively) the second semiconductor chip is located on the chip carrier and the first semiconductor chip is located on the second semiconductor chip (chip-on-chip, see Fig. 8) The sensor component further comprises a first sensor element integrated in the first semiconductor chip and a second sensor element integrated in the second semiconductor chip (see e.g. Fig. 4, sensor element 210 in chip 21 and sensor element 222 in chip 22) as well as a housing formed by a potting compound which has an opening (see e.g. Fig. 4, opening O1). Both the first sensor element and the second sensor element are located inside the opening, so that they can interact with the atmosphere surrounding the sensor element.

[0044] According to one embodiment, the first sensor element and / or the second sensor element can (optionally) be covered with a gel layer (see figure). Fig. 4, Gel layer 211).

[0045] In some embodiments, the sensor device may have one or more bond wires that electrically connect the first semiconductor chip to the second semiconductor chip (chip-to-chip bonding, see e.g. Fig. 5-7). In some embodiments, the sensor device may include bond wires for electrically connecting the first semiconductor chip and / or the second semiconductor chip to corresponding chip contacts of the chip carrier. In both cases, the bond wires may be completely surrounded by potting compound.

[0046] One top side of the first semiconductor chip and one top side of the second semiconductor chip can be partially covered with the potting compound (in particular, that the bond wires are protected and only the area around the sensor elements remains exposed, see e.g. Fig. 3D and Fig. 4).

[0047] In some embodiments (see Fig. In 3D and 4-7, the first and second semiconductor chips (and possibly further semiconductor chips) are mounted side-by-side on the chip carrier, with their undersides facing each other. In this case, a gap between the first and second semiconductor chips can also be filled with potting compound (see...). Fig. 3D and Fig. 4, Part 31' of the potting compound). Optionally, in the area of ​​the gap between the first and second semiconductor chips, the potting compound can extend beyond the two semiconductor chips (and form a mechanical barrier, see Fig. 4).

[0048] The first sensor element and the second sensor element can be sensitive to different physical parameters (e.g., pressure, humidity, etc.), but this is not necessarily the case.

[0049] Another embodiment relates to a manufacturing process for a sensor component. According to one embodiment, the process comprises mounting a first semiconductor chip and a second semiconductor chip onto a chip carrier or (alternatively) bonding the first semiconductor chip to the second semiconductor chip and mounting the second semiconductor chip (together with the first semiconductor chip) onto the chip carrier, wherein a first sensor element is integrated into the first semiconductor chip and a second sensor element is integrated into the second semiconductor chip. The process further comprises manufacturing a chip housing from potting compound using a film-assisted molding (FAM) process such that an opening remains in the chip housing and the first and second sensor elements are located in the opening and can consequently interact with the atmosphere surrounding the semiconductor chips.

[0050] According to one embodiment, a mold used for the FAM process is shaped such that in the area between the first semiconductor chip and the second semiconductor chip, the potting compound extends beyond the two semiconductor chips (see figure). Fig. 4).

[0051] According to one embodiment, the method may include applying a gel layer covering the first sensor element and / or the second sensor element.

[0052] According to one embodiment, the method – prior to manufacturing the chip package – may further include: the production of bond wire connections for electrically connecting the first semiconductor chip and / or the second semiconductor chip with corresponding chip contacts of the chip carrier, and / or the production of one or more bond wire connections for electrically connecting the first semiconductor chip with the second semiconductor chip (chip-to-chip bonding).

Claims

[1] A sensor component comprising the following: a chip carrier (10); a first semiconductor chip (21) and a second semiconductor chip (22), wherein the second semiconductor chip (22) is arranged on the chip carrier (10) and the first semiconductor chip (21) is arranged on the second semiconductor chip (22); a first sensor element (210) integrated in the first semiconductor chip (21) and a second sensor element (221, 222) integrated in the second semiconductor chip (22); a housing formed by a potting compound (31) which has an opening (O1); wherein both the first sensor element (210) and the second sensor element (221, 222) are located within the opening (O1) so that they can interact with the atmosphere surrounding the sensor element. [2] The sensor element according to claim 1, wherein the first sensor element (210) and the second sensor element (221, 222) are sensitive to different physical parameters. [3] The sensor element according to claim 1 or 2, further comprising: Bond wires (15) for electrical connection of the first semiconductor chip (21) and / or the second semiconductor chip (22) with corresponding chip contacts of the chip carrier (10), wherein the bond wires (15) are completely surrounded by potting compound (31). [4] The sensor component according to one of claims 1 to 3, wherein a top surface of the first semiconductor chip (21) and a top surface of the second semiconductor chip (22) are partially covered with the potting compound (31). [5] The sensor element according to any one of claims 1 to 4, wherein the first sensor element (210) and / or the second sensor element (221, 222) is covered with a gel layer (211). [6] The sensor component according to any one of claims 1 to 5, further comprising: one or more bond wires (15') which electrically connect the first semiconductor chip (21) to the second semiconductor chip (22). [7] A procedure comprising the following: Bonding the first semiconductor chip (21) to the second semiconductor chip (22) and mounting the second semiconductor chip (21) onto the chip carrier (10), wherein a first sensor element (210) is integrated in the first semiconductor chip (21) and a second sensor element (221, 222) is integrated in the second semiconductor chip (22), Manufacturing a chip housing from potting compound (31) using a film-assisted molding (FAM) process such that an opening remains in the chip housing and the first sensor element (210) and the second sensor element (221, 222) are located in the opening and can consequently interact with the atmosphere surrounding the semiconductor chips (21, 22). [8] The method according to claim 7, which further comprises: Applying a gel layer (211) that covers the first sensor element (210) and / or the second sensor element (221, 222). [9] The method according to claim 7 or 8, which further comprises - prior to manufacturing the chip package: Production of bond wire connections (15) for electrical connection of the first semiconductor chip (21) and / or the second semiconductor chip (22) with corresponding chip contacts of the chip carrier (10), and / or Formation of one or more bond wire connections (15') for electrical connection of the first semiconductor chip (21) to the second semiconductor chip (22).

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