Sensor device

Abstract

A sensor device (100) for the detection of hydrogen is described, comprising a substrate (10) with a bending body (11) and a functional layer stack (20) on a surface of the bending body (11), wherein the functional layer stack (20) comprises at least one sensor layer (21) and an adhesion promoter layer (22) between the surface and the sensor layer (21), wherein the sensor layer (21) is provided and configured to have a volume dependent on a hydrogen concentration.

Description

[0001] A sensor device is specified. In particular, the sensor device can be designed and configured for the detection of hydrogen. Thus, the sensor device is most preferably configured as a hydrogen sensor.

[0002] Hydrogen sensors are known, for example, from US 7,340,941 B1, US 10,866,203 B2 and EP 2 520 928 B1.

[0003] At least one function of certain embodiments is to specify a sensor device.

[0004] This problem is solved by an object according to the independent patent claim. Advantageous embodiments and further developments of the object are characterized in the dependent claims and are further described in the following description and drawings.

[0005] According to at least one embodiment, a sensor device is specified. The sensor device can, in particular, be configured as a sensor device for the detection of hydrogen. For example, the sensor device can be designed and configured for measuring the concentration of hydrogen in the vicinity of the sensor device.

[0006] According to a further embodiment, the sensor device comprises a sensor layer that can change at least one physical property depending on the hydrogen content. The hydrogen content in the sensor layer can, in particular, depend on the hydrogen concentration surrounding the sensor layer. Accordingly, the at least one physical property of the sensor layer can depend on the hydrogen concentration surrounding the sensor layer. It is particularly preferred that the sensor layer be designed and configured to have a volume that depends on the hydrogen concentration. Thus, for example, the sensor layer can have an increasing volume with an increasing hydrogen concentration in the environment.The sensor layer material can be specifically designed and intended to absorb hydrogen, with the hydrogen atoms being incorporated, for example, into interstitial sites within the atomic lattice of the sensor layer material. The higher the hydrogen concentration in the vicinity of the sensor layer, the more hydrogen can be absorbed into the sensor layer. If the hydrogen concentration in the vicinity decreases, hydrogen can be released from the sensor layer back into the environment. This results in a volume change of the sensor layer that depends on the surrounding hydrogen concentration. This property is subsequently referred to as hydrogen-dependent volume change.

[0007] According to a further embodiment, the sensor layer comprises one or more materials selected from: palladium, yttrium, scandium, a lanthanide, an acetamide, tungsten oxide, vanadium oxide, and mixtures, compounds, and alloys containing one or more of these materials. Particularly preferably, the sensor layer comprises palladium or an alloy, mixture, or compound containing palladium. For example, the sensor layer comprises or is composed of pure palladium or an alloy of palladium and one or more selected from gold, silver, and nickel, i.e., Pd, PdAu, PdAg, and / or PdNi.

[0008] According to a further embodiment, the sensor device comprises a bending body. The bending body has a surface on which the sensor layer is applied. Here and in the following, the term "bending body" refers to a structure on which the sensor layer is applied. A change in the volume of the sensor layer due to a changing hydrogen concentration in the vicinity of the sensor layer can cause the sensor layer to exert mechanical stress on the surface of the bending body, and thus on the bending body itself, so that it can deform. In particular, the bending body can be designed such that it can deform in at least one spatial direction due to the hydrogen-dependent volume change of the sensor layer. The degree of deformation of the bending body can thus provide information about the amount of hydrogen incorporated into the sensor layer and, in turn, about the hydrogen concentration in the vicinity of the sensor layer.

[0009] According to another embodiment, the bending body is part of a substrate. In other words, the sensor device can comprise a substrate with the bending body. The substrate and the elements and structures applied therein and on it, such as the bending body, can preferably be manufactured using MEMS technology (MEMS: "micro electro-mechanical system"), so that the substrate with the bending body can, in particular, be designed as a MEMS chip. MEMS technology enables small dimensions and a high degree of integration. For example, lithographic process steps can be used in the manufacture of the sensor device and, in particular, the bending body. Furthermore, additional elements and components, such as electrically conductive layers and / or electrically insulating layers and / or electrical components, can be arranged in and / or on the substrate.In particular, at least one resistive element can be formed in the area of ​​the bending body. At least one resistive element of the bending body, or the bending body as a whole, or the substrate with the bending body as a whole, can, for example, comprise a piezoresistive material whose electrical resistance changes with deformation. Preferably, the substrate with the bending body can comprise silicon or consist essentially of silicon. Furthermore, several resistive elements can be present in the area of ​​the bending body, which can be connected, for example, via a bridge circuit. Thus, the sensor device can comprise one or more voltage-sensitive MEMS elements. By measuring the electrical resistance of the at least one resistive element, conclusions can be drawn about the deformation and the change in deformation of the bending body, which in turn can be a measure of a change in the volume of the sensor layer.As described above, this allows conclusions to be drawn about the hydrogen content in the sensor layer and thus also about the hydrogen concentration in the vicinity of the sensor layer.

[0010] According to another embodiment, the bending body is designed as a membrane. The thinner the bending body, the greater the potential deformation of the bending body caused by a change in the volume of the sensor layer. For example, the bending body can be designed as a full-surface, and therefore closed, membrane. Furthermore, the substrate can have an opening, and the bending body can be designed as a structure spanning the opening. For example, the bending body can be beam-shaped as a beam fixed at both ends or cross-shaped as two intersecting and connected beams, each fixed at both ends. Alternatively, the substrate can have an opening, and the bending body can be designed as a beam fixed at one end projecting into the opening. The beam can have a uniform width or, preferably, a width that decreases with increasing distance from an edge region of the opening.

[0011] According to a further embodiment, the sensor device comprises a functional layer stack with the sensor layer. The functional layer stack is applied to the surface of the bending body, with the sensor layer preferably being applied to an upper surface of the functional layer stack facing away from the surface of the bending body. To protect the sensor layer and, in particular, the functional layer stack, it can, for example, be covered with a hydrogen-permeable protective layer. The protective layer can be silicon-based. For example, the protective layer can contain or be composed of silicon oxide. Furthermore, the protective layer can, for example, be based on or be composed of one or more polymers and / or have water-repellent properties. For example, the protective layer can be hydrophobic.

[0012] According to a further embodiment, the sensor device has an adhesion promoter layer between the surface of the bent body and the sensor layer. The adhesion promoter layer is particularly a component of the functional layer stack, so that the functional layer stack between the surface of the bent body and the sensor layer includes the adhesion promoter layer. The adhesion promoter layer is particularly preferably applied directly to the surface of the bent body and is thus in direct mechanical contact with the surface of the bent body.

[0013] The adhesion promoter layer can be specifically designed and configured to exhibit good adhesion properties to the surface of the bending body. "Good adhesion properties" can mean, in particular, that the adhesion promoter layer exhibits better adhesion properties to the surface of the bending body than the sensor layer, or than the sensor layer and all other layers of the functional layer stack. In other words, the material of the adhesion promoter layer can exhibit at least better adhesion than the aforementioned material of the sensor layer.

[0014] According to another embodiment, the adhesion promoter layer comprises one or more materials selected from chromium, platinum, titanium, nickel, and vanadium. For example, the adhesion promoter layer can be made of a pure material and thus consist essentially of one of the aforementioned materials. A "pure" material and "consist essentially of one material" can, in particular, mean that the material is present in the adhesion promoter layer at a degree of purity that is technically feasible. Thus, a pure material may contain impurities that are unavoidable for technical reasons. For example, the adhesion promoter layer can comprise at least 90%, at least 95%, at least 99%, or at least 99.9% of the material of which the adhesion promoter layer essentially consists. Percentages expressed here and in the following may, in particular, be mass percent.Furthermore, the adhesion promoter layer can be an alloy, in particular an alloy with one or more of the aforementioned materials. For example, the adhesion promoter layer can be a chromium-rich CrAl alloy, for example with 67% Cr and 33% Al, or a nickel-rich NiV alloy, for example with 93% Ni and 7% V.

[0015] A gold-free adhesion promoter layer is particularly preferred. "Gold-free" can mean, in particular, that the adhesion promoter layer contains no gold within the scope of standard technical possibilities, and that gold is present only as an impurity.

[0016] According to a further embodiment, the adhesion promoter layer has a thickness sufficient to form a complete and uninterrupted layer. For example, the adhesion promoter layer can have a thickness of 1 nm or more, 2 nm or more, or 5 nm or more. Furthermore, the adhesion promoter layer can have a thickness of 15 nm or less, or 10 nm or less. The thinner the adhesion promoter layer, the less it can influence and impede the deformation of the bending body. The adhesion promoter layer can preferably be applied by sputtering, atomic layer deposition, or vapor deposition.

[0017] The adhesion promoter layer can, for example, be directly adjacent to the sensor layer. In this case, the functional layer stack can consist of the adhesion promoter layer and the sensor layer, with the adhesion promoter layer being applied directly to the surface of the bending body.

[0018] Furthermore, the functional layer stack can include a diffusion barrier layer between the sensor layer and the adhesion promoter layer. The diffusion barrier layer can be designed and configured to be impermeable to hydrogen, so that preferably no hydrogen can pass from the sensor layer to the adhesion promoter layer. Particularly preferably, the diffusion barrier layer can comprise or consist of one or more metals, an alloy, or a compound containing one or more metals. For example, the diffusion barrier layer can comprise or consist of one or more materials selected from gold, silver, platinum, a nitride such as silicon nitride (Si₂N₃), and an oxide such as aluminum oxide (Al₂O₃) and / or silicon oxide (SiO₂). Particularly preferably, the diffusion barrier layer can comprise or consist of gold.The diffusion barrier layer is preferably as thin as possible, with a thickness sufficient to achieve the desired barrier effect. For example, the diffusion barrier layer has a thickness greater than or equal to 5 nm and less than or equal to 15 nm.

[0019] The sensor device described here is preferably designed as a hydrogen MEMS sensor, as described above. Its measuring function is based on the volume change of the sensor layer, preferably palladium-based, and the resulting deformation of the bending body. This deformation can be detected by reading the electrical resistance of one or more voltage-sensitive MEMS elements. A weak and / or unstable adhesion of the sensor layer to the bending body, which could reduce the sensitivity and stability of the sensor layer and thus its performance and service life, is prevented by the adhesion promoter layer. This layer is particularly preferably applied directly to the surface of the bending body, which may, for example, have silicon or silicon oxide as its surface material.

[0020] Further advantages, advantageous embodiments and further developments result from the exemplary embodiments described below in conjunction with the figures. Fig. 1A and Fig. Figure 1B shows schematic representations of a sensor device according to an exemplary embodiment. Fig. Figure 2 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 3 shows a schematic representation of part of a sensor device according to a further embodiment, Fig. Figure 4 shows a schematic representation of part of a sensor device according to a further embodiment, Fig. Figure 5 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 6 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 7 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 8 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 9 shows a schematic representation of a sensor device according to a further embodiment, Fig. Figure 10 shows a schematic representation of a sensor device according to a further embodiment.

[0021] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be designated with the same reference numerals. The depicted elements and their relative sizes are not to be considered to scale; rather, individual elements, such as layers, components, building elements, and areas, may be exaggerated for clarity and / or better understanding.

[0022] In the Fig. 1A and Fig. Figure 1B shows an embodiment of a sensor device 100 for detecting hydrogen. In particular, the sensor device 100 can be designed and configured for measuring the concentration of hydrogen in the environment of the sensor device 100.

[0023] The sensor device comprises a substrate 10 with a bending body 11. Furthermore, the sensor device 100 has a functional layer stack 20 with a sensor layer 21 on the substrate 10. The functional layer stack 20 is preferably applied to the surface of the bending body 11, with the sensor layer 21 preferably being applied to a top surface of the functional layer stack 20 facing away from the surface of the bending body 11.

[0024] The sensor layer 21 is configured to change at least one physical property depending on the hydrogen concentration contained within it. Particularly preferably, the sensor layer 21 is designed and configured to have a volume that depends on the amount of hydrogen present in the sensor layer 21. As described in the general section, the sensor layer 21 has an increasing volume with increasing hydrogen content, since the material of the sensor layer 21 can absorb hydrogen and, for example, incorporate it into interstitial sites. This allows a hydrogen-dependent volume change of the sensor layer 21 to be achieved, with the amount of incorporated hydrogen depending on the hydrogen concentration in the atmosphere surrounding the sensor layer 21.For example, the sensor layer 21 contains palladium or an alloy of palladium and one or more selected gold, silver and nickel, such as PdAu, PdAg and / or PdNi.

[0025] A change in volume of the sensor layer 21 due to a changing hydrogen concentration in the environment of the sensor layer 21 causes the sensor layer to exert a mechanical stress on the surface of the bending body 11 and thus on the bending body 11, so that it can deform, as shown in Fig. As indicated in Figure 1B, the degree of deformation of the bending body 11 can thus provide information about the amount of hydrogen incorporated into the sensor layer 21 and therefore about the hydrogen concentration in the vicinity of the sensor layer 21. The bending body 11 is designed as a membrane to deform as easily as possible in response to a change in the volume of the sensor layer 21. The thinner the bending body 11, the greater the deformation it can exhibit due to a change in the volume of the sensor layer 21.

[0026] The substrate 10 and the elements and structures applied therein and on it, such as the bending body 11, can preferably be manufactured using MEMS technology (MEMS: "micro electro-mechanical system"), so that the substrate 10 with the bending body 11 can be designed, in particular, as a MEMS chip characterized by small dimensions and a high degree of integration. For example, lithographic process steps can be used in the manufacture of the sensor device 100 and, in particular, the substrate 10 with the bending body 11. Furthermore, additional elements and components, such as electrically conductive layers and / or electrically insulating layers and / or electrical components, can be arranged or formed in and / or on the substrate 10. In particular, at least one resistive element 12 can be formed in the region of the bending body 11.At least one resistive element 12 of the bending body 11, or the entire bending body 11, or the substrate 10 with the bending body 11, can, for example, comprise a piezoresistive material whose electrical resistance changes with deformation. Preferably, the substrate 10 with the bending body 11 can comprise silicon or consist essentially of silicon and silicon compounds. For example, several resistive elements can also be present in the region of the bending body, which can be connected, for instance, in the form of a Wheatstone bridge circuit. Thus, the sensor device 100 can comprise one or more voltage-sensitive MEMS elements. By measuring the electrical resistance, conclusions can be drawn about the deformation and change in deformation of the bending body 11, which in turn can be a measure of a volume change of the sensor layer 21.As described above, this allows conclusions to be drawn about the hydrogen concentration in sensor layer 21 and thus also about the hydrogen concentration in the environment.

[0027] Furthermore, the sensor device 100 has connection elements 30 for mechanical and electrical mounting of the sensor device 100 on a substrate such as a printed circuit board. The orientation of the sensor device 100 can be defined by the connection elements 30 and the mounting direction they define. Accordingly, the side of the sensor device 100 with the connection elements 30 can be defined as the underside, and the side opposite the connection elements 30 as the top side of the sensor device 100 and thus of the substrate 10. Similarly, the bending body 11 has a top side facing the top side of the sensor device 100 and a bottom side facing the underside of the sensor device 100. In the Fig. 1A and Fig. In the embodiment shown in Figure 1B, the functional layer stack 20 is arranged on the top side of the bending body 11. The connection elements 30 can, for example, also be provided for mechanical mounting only and thus be mechanical connection elements. In this case, additional electrical connection elements (not shown) may be present, which are particularly preferably arranged on the top side of the sensor device 100, i.e., in particular next to the functional layer stack 20.

[0028] Alternatively, as in another embodiment in Fig. As shown in 2, the functional layer stack 20 is arranged on the underside of the bending body 11, with all other features and properties of the Fig. 2 shown embodiment as in the embodiment of the Fig. 1A and Fig. 1B can be formed. All embodiments, features and properties described below can refer to a functional layer stack 21 arranged on the top or bottom of the bending body 11.

[0029] In Fig. Figure 3 shows a section of the sensor device 100, a part of the bending body 11 and the functional layer stack 20 with the sensor layer 21, which, as described above, is arranged on a side of the functional layer stack 20 facing away from the bending body 11 and is designed as described above.

[0030] Furthermore, the sensor device 100, and thus the functional layer stack 20, has an adhesion promoter layer 22 between the surface of the bending body 11 and the sensor layer 21. The adhesion promoter layer 22 is particularly preferably applied directly to the surface of the bending body 11 and is therefore in direct mechanical contact with the surface of the bending body 11.

[0031] The adhesion promoter layer 22 is designed and configured to exhibit good adhesion properties on the surface of the bending body 11 and, in particular, to provide good adhesion between the surface of the bending body 11 and the layer applied to the adhesion promoter layer 22, i.e., in the illustrated embodiment, the sensor layer 21. In particular, the adhesion promoter layer 22 can exhibit better adhesion properties with respect to the surface of the bending body 11 than the sensor layer 21 or than the sensor layer 21 and all other layers of the functional layer stack 20.

[0032] The adhesion promoter layer 22 comprises one or more materials selected from chromium, platinum, titanium, nickel, and vanadium. For example, the adhesion promoter layer 22 can consist substantially of one of the aforementioned materials and comprise at least 90%, at least 95%, at least 99%, or at least 99.9% of said material. Furthermore, the adhesion promoter layer 22 can comprise an alloy, in particular an alloy with one or more of the aforementioned materials. For example, the adhesion promoter layer 22 can comprise a chromium-rich CrAl alloy, for example, with 67% Cr and 33% Al, or a nickel-rich NiV alloy, for example, with 93% Ni and 7% V. Particularly preferably, the adhesion promoter layer 22 is free of Au.

[0033] The adhesion promoter layer 22 is applied by sputtering, atomic layer deposition, or vapor deposition and has a thickness sufficient to form a complete and uninterrupted layer to act as an adhesion promoter across the entire surface. Preferably, the adhesion promoter layer 22 has a thickness greater than or equal to 1 nm, or greater than or equal to 2 nm, or greater than or equal to 5 nm. Furthermore, the adhesion promoter layer 22 has a thickness of less than or equal to 15 nm or less than or equal to 10 nm, with a smaller thickness being advantageous in order to minimize or prevent the deformation of the bending body 11.

[0034] In the illustrated embodiment, the adhesion promoter layer borders the Fig. 3 directly adjacent to the sensor layer 21, so that in this embodiment the functional layer stack 20 consists of the adhesion promoter layer 22 and the sensor layer 21 and the adhesion promoter layer 22 is applied directly to the surface of the bending body.

[0035] In Fig. 4 is another embodiment in one of the Fig. Figure 3 shows a corresponding view in which the functional layer stack 20 between the sensor layer 21 and the adhesion promoter layer 22 additionally comprises a diffusion barrier layer 23. The diffusion barrier layer 23 is impermeable to hydrogen, so that no hydrogen can pass from the sensor layer 21 to the adhesion promoter layer 22. This prevents the adhesion effect of the adhesion promoter layer 22 from being impaired by hydrogen, which could, for example, react with a material of the adhesion promoter layer 22. For example, the diffusion barrier layer 23 comprises or consists of one or more materials selected from gold, silver, platinum, a nitride such as silicon nitride (Si₂N₃), and an oxide such as aluminum oxide (Al₂O₃) and / or silicon oxide (SiO₂). Particularly preferably, the diffusion barrier layer 23 comprises or consists of gold.The diffusion barrier layer 23 preferably has a thickness greater than or equal to 5 nm and less than or equal to 15 nm.

[0036] To protect the functional layer stack 20, it can be covered with a hydrogen-permeable protective layer 40, as shown purely by way of example in Fig. 5 in one of the embodiments of the Fig. 1A and Fig. As shown in the corresponding embodiment in Figure 1B. In other words, the functional layer stack 20 can be encapsulated by the protective layer 40. The protective layer 40 can particularly preferably protect the functional layer stack 20 from damaging environmental influences such as moisture or harmful gases and is particularly preferably based on silicon. In particular, the protective layer can comprise or be made of silicon oxide. Furthermore, the protective layer 40 can, for example, be based on or made of one or more polymers and / or have water-repellent properties. For example, the protective layer can be hydrophobic.

[0037] In the Fig. Figures 6 to 10 show the sensor device 100 in top views of the functional layer stack 20 and in particular the sensor layer 21 in several embodiments for the geometric design of the bending body 11 and the functional layer stack 20 with the sensor layer 21.

[0038] As in Fig. As shown in Figure 6, the bending body 11 can be designed as a full-surface and closed membrane. For example, the bending body 11 and the functional layer stack 20 with the sensor layer 21 can be circular. Alternatively, other shapes are also possible, such as a polygonal or elliptical shape.

[0039] Furthermore, substrate 10 can be used, as in the Fig. As shown in Figures 7 to 10, the opening 19 is located, and the bending body 11 can be designed as a structure spanning the opening 19 or as a structure projecting into the opening 19. As shown in Figures 7 to 10, the bending body 11 can be designed as a structure spanning the opening 19 or as a structure projecting into the opening 19. Fig. As shown in Figure 7, the bending body 11 can be configured in a cross shape as two intersecting beams, each fixed on two sides and connected to one another. In other words, the bending body 11 with the functional layer stack 20 and the sensor layer 21 is configured in the shape of a window cross.

[0040] In Fig. Figure 8 shows another embodiment in which the bending body 11 is designed as a beam fixed on both sides. In other words, the bending body 11 spans the opening 19 like a bridge.

[0041] According to the exemplary embodiments of the Fig. 9 and Fig. In figure 10, the bending body 11 is designed as a beam fixed at one end. The beam can have a uniform width, as shown in Fig. 9 is indicated, or preferably have a width that decreases with increasing distance from an edge region of the opening 19, as shown in Fig. 10 is indicated.

[0042] The features and embodiments described in connection with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures can alternatively or additionally include further features as described in the general section.

[0043] The invention is not limited to the description provided by means of the exemplary embodiments. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes every combination of features in the claims, even if that feature or combination itself is not explicitly stated in the claims or exemplary embodiments. Reference symbol list 10 substrate 11 Bending bodies 12 Resistance element 19 Opening 20 functional layer stacks 21 Sensor layer 22 Liability mediator layer 23 Diffusion barrier layer 30 Connection element 40 protective layer 100 sensor device QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 7,340,941 B1

[0002] US 10,866,203 B2

[0002] EP 2 520 928 B1

[0002]

Claims

[1] Sensor device (100) for the detection of hydrogen, comprising - a substrate (10) with a bending body (11) and - a functional layer stack (20) on a surface of the bending body (11), wherein the functional layer stack (20) has at least one sensor layer (21) and an adhesion promoter layer (22) between the surface and the sensor layer (21), wherein the sensor layer (21) is designed and configured to have a volume that depends on a hydrogen concentration. [2] Sensor device (100) according to claim 1, wherein the sensor layer (21) comprises or is made of palladium. [3] Sensor device (100) according to one of the preceding claims, wherein the adhesion promoter layer (22) is applied directly to the surface of the bending body (11). [4] Sensor device (100) according to one of the preceding claims, wherein the adhesion promoter layer (22) comprises one or more materials selected from chromium, platinum, titanium, nickel and vanadium. [5] Sensor device (100) according to one of the preceding claims, wherein the adhesion promoter layer (22) is free of gold. [6] Sensor device (100) according to one of the preceding claims, wherein the adhesion promoter layer (22) comprises an alloy. [7] Sensor device (100) according to one of the preceding claims, wherein the adhesion promoter layer (22) comprises a chromium-rich CrAl alloy or a nickel-rich NiV alloy. [8] Sensor device (100) according to any of the preceding claims, wherein the adhesion promoter layer (22) has a thickness greater than or equal to 1 nm and less than or equal to 15 nm. [9] Sensor device (100) according to one of the preceding claims, wherein the sensor layer (21) is applied to a top surface of the functional layer stack (20) facing away from the surface of the bending body (11). [10] Sensor device (100) according to one of the preceding claims, wherein the functional layer stack (20) has a diffusion barrier layer (23) between the sensor layer (21) and the adhesion promoter layer (22). [11] Sensor device (100) according to claim 10, wherein the diffusion barrier layer (23) comprises or is made of gold. [12] Sensor device (100) according to one of the preceding claims, wherein the bending body (11) is designed as a membrane. [13] Sensor device (100) according to one of the preceding claims, wherein the bending body (11) is designed as a full-surface membrane. [14] Sensor device (100) according to one of the preceding claims, wherein the substrate (10) has an opening (19) and the bending body (11) is designed as a structure spanning the opening. [15] Sensor device (100) according to claim 14, wherein the bending body (11) is cross-shaped. [16] Sensor device (100) according to claim 14, wherein the bending body (11) is beam-shaped. [17] Sensor device (100) according to one of claims 1 to 13, wherein the substrate (10) has an opening (19) and the bending body (11) is designed as a beam fixed on one side projecting into the opening (19). [18] Sensor device (100) according to claim 17, wherein the bar has a decreasing width with increasing distance from an edge region of the opening (19). [19] Sensor device (100) according to one of the preceding claims, wherein the bending body (11) comprises a piezoresistive material. [20] Sensor device (100) according to one of the preceding claims, wherein the sensor device (100) is a MEMS component.

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