Substrate clip with foil and structured electrically conductive structure of varying thicknesses

Abstract

Substrate clip (100) for connecting a carrier (102) to an electronic component (104) of a housing (106), wherein the substrate clip (100) has an electrically insulating and thermally conductive film (108) and a structured electrically conductive structure (110) on a main surface of the electrically insulating and thermally conductive film (108) and has at least two different connecting sections (112-115) with different thicknesses (d1, d2).

Description

Background Technical field

[0001] Different embodiments generally relate to a substrate clip, a housing, and a method for manufacturing a substrate clip. Description of the state of the art

[0002] Enclosures can be described, for example, as encapsulated electronic components with exposed electrical connections and can be mounted on an electronic peripheral, such as a printed circuit board.

[0003] Enclosure costs are a key driver for industry. This is closely linked to performance, dimensions, and reliability. The various enclosure solutions are diverse and must meet the requirements of the application. Summary

[0004] There may be a need for a housing and corresponding components that can be manufactured easily and with high reliability.

[0005] According to an exemplary embodiment, a substrate clip is provided for connecting a carrier to an electronic component of a housing, wherein the substrate clip comprises an electrically insulating and thermally conductive film and a structured electrically conductive structure on a main surface of the electrically insulating and thermally conductive film and has at least two different connection sections with different thicknesses.

[0006] According to a further exemplary embodiment, a housing is provided comprising a carrier, an electronic component mounted on the carrier and a substrate clip with the above-mentioned features connecting the carrier to the electronic component, wherein at least one of the at least two different connection sections establishes an electrically conductive connection with the carrier and at least one other of the at least two different connection sections establishes an electrically conductive connection with the electronic component.

[0007] According to yet another exemplary embodiment, a method for manufacturing a substrate clip for connecting a carrier to an electronic component of a housing is provided, wherein the method comprises providing an electrically insulating and thermally conductive film and forming a structured electrically conductive structure on a main surface of the electrically insulating and thermally conductive film, such that the structured electrically conductive structure has at least two different connection sections with different thicknesses.

[0008] According to an exemplary embodiment, a substrate adapted as a clip can be provided. Such a substrate clip can be configured to efficiently connect a carrier to an electronic component within a housing, while also providing enhanced functionality. This substrate clip can comprise an electrically insulating and thermally conductive film, such as a ceramic plate, which provides dielectric function and contributes to the dissipation of heat generated by the electronic component during housing operation. A structured, electrically conductive layer can be formed on one side of the film and can be provided with two or more connection sections of varying thicknesses.Such an electrically conductive structure with multiple height levels on an electrically insulating and thermally conductive film can provide clip functionality by connecting different link sections to various housing components, such as the carrier and electronic component. This can enable the carrier and electronic component to be electrically coupled in a compact and highly efficient manner without adding significant complexity to the manufacturing process, and with the possibility of providing additional electrical decoupling and thermal coupling functionality for the clip and the housing as a whole.To put it simply, a support substrate with multiple connection sections of different thicknesses on the same main surface of a dielectric and thermally conductive film can be reconfigured to additionally function as a clip for creating an electrical connection between components at different height levels, while simultaneously providing electrical current isolation and heat dissipation functionality. Description of further exemplary embodiments

[0009] Further exemplary embodiments of the substrate clip, the housing and the method are explained below.

[0010] In the context of the present application, the term “substrate clip” can, in particular, refer to a hybrid of an electrically conductive clip that enables electrical connectivity at two or more different height levels, with a substrate that provides electrically insulating and thermally conductive functionality through a suitably configured plate. With a common insulating substrate, it may be advantageous to provide more than one structured electrically conductive structure on a major surface of the substrate.For example, a first electrically conductive structure can be used to connect a drain pad of the electronic component to a drain trace of the substrate, and a second electrically conductive structure can be used to connect a source pad of the electronic component to a source trace of the substrate. Both the first and second structures can be fabricated on a major surface of the substrate. During fabrication, it can be advantageous to use a single pick-and-place process to position the substrate clip, instead of the conventional two separate pick-and-place processes for a drain clip and a source clip.

[0011] In the context of this application, the term "support" can, in particular, refer to a support structure (which may be at least partially electrically conductive) that serves as a mechanical support for the electronic component(s) to be mounted on it and that may also contribute to the electrical connection between the electronic component(s) and the periphery of the enclosure. In other words, the support can fulfill a mechanical support function and, optionally, an electrical connection function. A support can comprise or consist of a single part, several parts connected via encapsulation or other enclosure components, or a subarrangement of supports. If the support forms part of a conductor frame structure, it can be a die pad and, optionally, one or more conductor structures.For example, a substrate can be a conductor frame structure (e.g., made of copper), a DAB (direct aluminum bonding substrate), a DCB (direct copper bonding substrate), etc. Furthermore, the substrate can also be configured as an active metal brazing substrate (AMB substrate). At least part of the substrate can be encapsulated along with the electronic component. The substrate can be a conductor frame, a substrate, or a laminate. It may or may not be a metal conductor frame.

[0012] In the context of the present application, the term "electronic component" may include, in particular, a semiconductor chip (especially a power semiconductor chip), an active electronic device (such as a transistor), a passive electronic device (such as a capacitor, an inductor, or a resistor), a sensor (such as a microphone, a light sensor, or a gas sensor), an actuator (for example, a loudspeaker), and a microelectromechanical system (MEMS). In other embodiments, however, the electronic component may also be of a different type, such as a mechatronic element, in particular a mechanical switch, etc. In particular, the electronic component may be a semiconductor chip comprising at least one integrated circuit element (such as a diode or a transistor in a surface section thereof).The electronic component can be a bare chip or it can already be packaged or encapsulated. Semiconductor chips implemented according to exemplary embodiments can be formed using silicon technology, gallium nitride technology, silicon carbide technology, etc.

[0013] In the context of the present application, the term "housing" can, in particular, refer to an electronic device which, in addition to at least one substrate clip, may have one or more electronic components mounted on a (particularly partially or completely electrically conductive) support. The components of the housing may optionally be at least partially encapsulated. Optionally, one or more electrically conductive connecting elements (such as metallic pillars, bumps, bond wires, and / or clips) may be implemented in a housing, for example, for electrical coupling and / or mechanical support of the electronic component.

[0014] In the context of the present application, the term "electrically insulating and thermally conductive film" can, in particular, refer to a roughly plate-like physical body made of a material with electrically non-conductive and thermally conductive properties. This film can be made of an electrical insulator. The electrical insulator can be thermally conductive, for example, having a thermal conductivity of at least 3 W / mK, preferably at least 5 W / mK, and more preferably at least 10 W / mK or at least 20 W / mK. A suitable material for the film is a ceramic material, such as aluminum oxide, boron nitride, silicon nitride, etc. The film can be planar or flat. However, a film can also have two or more different thicknesses, in particular for a middle ceramic layer.

[0015] In the context of the present application, the term “structured electrically conductive structure” may, in particular, refer to a structure made of a metallic material such as copper or aluminum, which has a surface profile on its exposed side facing away from the foil. On the other side of the electrically conductive structure, facing the foil, the electrically conductive structure may be planar or flat. The electrically conductive structure may be provided with at least two exposed connection surfaces capable of connecting components of a housing, such as a support and / or an electronic component, which may be located at different height levels.

[0016] In the context of the present application, the term "connection sections with different thicknesses" can, in particular, refer to different sections of a structured, electrically conductive structure configured to establish an electrical connection with other components and made of electrically conductive material of different thicknesses. The different thicknesses can be provided in a direction transverse or perpendicular to a connection surface between the structured, electrically conductive structure and the film. Preferably, but not necessarily, such a connection surface can be planar. The different connection sections can be integrally formed (e.g., they can be a continuous or connected electrically conductive physical structure) or can be separate from one another (e.g., they can be electrically decoupled electrically conductive islands).

[0017] In the context of the present application, the term "main surface" of a body can, in particular, refer to the largest surface area of ​​one of the largest body surfaces. For example, a body (such as a film or part thereof) can be plate-shaped.

[0018] For example, different embodiments refer to a single-clip, single-chip connection (e.g., source to drain), for example, using an architecture as in Fig. 1 or Fig. 4 shown. In another embodiment, it may be possible to use a single clip with multiple chip connections (for example, a source to a drain of the same electronic component, a source to a drain of another electronic component, or a source of a first component to a drain of a second component, or vice versa), for example, using an architecture that is shown in Fig. 6 or Fig. Figure 7 is shown. In yet another embodiment, it may be possible to use a double clip with a single-chip connection, for example using an architecture that is described in Fig. 3 is shown.

[0019] In one embodiment, at least one of the at least two distinct connection sections comprises a metal column. Such a metal column, for example a copper column, can be connected, for example, to a metal layer structure to selectively extend the vertical extent of the structured, electrically conductive structure. Such a column can extend perpendicular to a major surface of the film. For example, the connection of the column can be achieved by soldering, sintering, or electrically conductive adhesive.

[0020] In one embodiment, the at least two distinct connection sections comprise a first metal column and a second metal column with different vertical extensions. The first metal column and the second metal column can extend parallel to each other. Attaching metal columns with different vertical extensions can further refine the surface profile of the structured, electrically conductive structure to support an even greater number of different connection levels or heights.

[0021] In one embodiment, the at least two distinct connecting sections comprise a first metal sheet section and a second metal sheet section with different vertical extents. The metal sheet sections can have main surfaces that are arranged on main surface sections of the electrically insulating and thermally conductive foil. They can extend in their thickness direction perpendicular to the foil up to different vertical planes. For example, such an embodiment is described in Fig. Figure 4 shows that a configuration of interconnected or unconnected flat metal sheet sections enables the connection of electronic components to a multi-stage substrate clip with minimal effort and in a compact and stable manner.

[0022] In one embodiment, at least one of the at least two distinct connection sections has a plating structure. The plating structure can be selectively arranged at an interface area with a carrier or with an electronic component. For example, such a plating structure can be selectively formed at an interface with another medium. For example, the plating structure can be formed on the surface of the metal columns, in particular on a flange face of the metal columns (see, for example, Fig. 15) On other parts of the interconnect sections, such a plating structure (for example, a plating layer) may be optional or may be omitted, particularly if such parts do not contact connected elements such as a die, a trace, or a conductor frame. In particular, the plating structure may be formed only on the final interface with another medium (for example, due to compatibility with front-side metallization, die pad surface, etc.). For example, a plating structure may be configured to enable or improve solderability.

[0023] In one embodiment, different sections of at least two distinct interconnects are electrically decoupled from each other. For example, this "decoupling" scenario can be used for two separate structured interconnects. For instance, one interconnect can be part of a drain clip region, and another interconnect can be part of a source clip region. However, the "decoupling" scenario can also be implemented for other use cases, such as connecting one interconnect to a first die and another interconnect to a second die.

[0024] In one embodiment, several of the at least two different connection sections are electrically coupled to each other. This "coupling" scenario can be used, for example, for one connection section that connects a die and another connection section that connects a conductor or conductor column to be connected to the die.

[0025] In one embodiment, the electrically insulating and thermally conductive film is flat with a homogeneous thickness. For example, a ceramic plate of constant thickness can be used for the film. This can make it possible to manufacture the substrate clip with very little effort.

[0026] In one embodiment, the electrically insulating and thermally conductive film comprises or consists of a ceramic. Ceramic materials can be reliable electrical insulators while simultaneously providing high thermal conductivity. For example, in an AMB-type substrate clip, the ceramic can be silicon nitride, whereas in a DCB-type substrate clip, the ceramic can be aluminum oxide. Many other ceramics are possible, such as aluminum nitride or boron nitride.

[0027] In one embodiment, the substrate clip has a further electrically conductive structure, in particular made of solderable material, on a different, opposite main surface of the electrically insulating and thermally conductive film. If the main surface of the electrically insulating and thermally conductive film, which faces the internal structured electrically conductive structure with connection sections, is also covered with a metal layer, the solderability of this external surface can be enabled or improved. For example, this can allow a heat sink to be connected to the further electrically conductive structure to further improve the thermal performance of the housing.

[0028] In one embodiment, the additional electrically conductive structure is a continuous layer, particularly one of homogeneous thickness. This can simplify the manufacturing process of the substrate clip. For example, it may be sufficient to simply deposit metallic material or apply a metal foil.

[0029] In one embodiment, the substrate clip is configured as one of a direct copper bonding substrate (DCB substrate), a direct aluminum bonding substrate (DAB substrate), and an active metal brazing substrate (AMB substrate). However, other types of substrates can also be used as a base for forming a substrate clip, for example, an insulated metal substrate (IMS).

[0030] In one embodiment, the housing has at least one further substrate clip with the features mentioned above. For example, such an embodiment is found in Fig. Figure 3 shows that, for example, multiple substrate clips can be arranged side-by-side and / or stacked vertically within a package. The design of different substrate clips can be the same or different. Providing at least two substrate clips can further refine the functionality of creating complex electrically conductive paths and electrical connectivity within a package, particularly in a package containing multiple electronic components (such as semiconductor chips). However, it may also be possible to electrically connect a single electronic chip using two or more substrate clips.

[0031] In one embodiment, the substrate clip connects at least two different sections of the carrier and / or connects at least two electronic components. In particular, it may be possible to connect several electronic components using only a single substrate clip. For example, such embodiments are found in the Fig. 6 to Fig. Figure 9 shows that the functionality of the substrate clip, which provides electrical connectivity on multiple vertical levels, can be advantageous in this context, for example, when electronic components of different thicknesses are connected and / or arranged on different vertical levels.

[0032] In one embodiment, the carrier has a component assembly section on which the electronic component is mounted and has at least one conductor section that is electrically coupled to the at least one electronic component and / or to the component assembly section. In particular, the component assembly section can be connected to one of the at least two connection sections, and the at least one conductor section can be connected to another of the at least two connection sections. For example, the component assembly section can be a die pad. The conductor section can be provided physically separate from the die pad or integrally connected to the die pad. The described configuration can, for example, make it possible to physically connect source lines.

[0033] In one embodiment, the main surface of the substrate clip, which faces the structured electrically conductive structure, forms part of an outer surface of the housing. This main surface can be formed by the electrically insulating and thermally conductive film and / or by another electrically conductive structure formed on the film. In particular, the electrically insulating and thermally conductive film can be exposed on a main surface of the housing. This can promote heat dissipation via the thermally conductive film, such as a ceramic film. In another embodiment, the film can be covered on an exposed outer surface with another electrically conductive structure, such as a continuous metal layer.Such an additional electrically conductive structure, or a heat sink attached to such an additional electrically conductive structure, can further promote heat dissipation from the housing.

[0034] In one embodiment, a major surface of the support forms part of an outer surface of the housing. In particular, a major surface of a component assembly section, such as a die pad, of the support can form part of an exposed major surface of the housing. This can promote heat dissipation from the electronic component inside the housing through the highly thermally conductive support to the surrounding environment.

[0035] Particularly in an embodiment in which one main surface of the housing is at least partially formed by a main surface of the support and the opposite main surface of the housing is at least partially formed by the exposed substrate clip, double-sided cooling via the exposed support and the exposed substrate clip can be achieved. This can lead to excellent thermal performance of the housing.

[0036] In one embodiment, the housing comprises an encapsulation, for example, a molding compound, which encapsulates a portion of the carrier, at least a portion of the substrate clip, and at least a portion of the electronic component, wherein, in particular, the substrate clip projects from the encapsulation (which may provide a form-fitting feature) or is coplanar with the encapsulation. In the context of the present application, the term "encapsulation" may, in particular, denote a material, structure, or element that surrounds or is intended to surround at least a portion of an electronic component and at least a portion of a carrier of a housing. In this context, an encapsulation may provide mechanical protection and electrical insulation and, optionally, contribute to heat dissipation during operation. In particular, the encapsulation may be electrically insulating, for example, a molding compound.A molding compound can consist of a matrix of flowable and curable material, in particular a resin, optionally one or more additives, and optionally embedded filler particles. As an alternative to a molding compound (for example, based on epoxy resin), the encapsulation can also be a potting compound (for example, based on an epoxy).

[0037] In one embodiment, the electronic component is arranged in a flip-chip configuration and has an active region on its front side that is connected to the substrate. An active region can be a section of a semiconductor body in which at least one monolithically integrated circuit element is formed. The active region can be oriented to face the substrate. In particular, such an electronic component arranged in a flip-chip configuration can be a vertical die (such as a MOSFET, an IGBT, a vertical GaN die, etc.). The front surface or structured surface of the electronic component can be attached to the substrate. Also in such a flip-chip configuration, connectivity within the package can be facilitated or established by a substrate clip as described herein.

[0038] In one embodiment, the electronic component and another electronic component are connected in a half-bridge configuration. In the context of the present application, the term "half-bridge" can, in particular, refer to a circuit consisting of an upper transistor switch ("high-side") and a lower transistor switch ("low-side"). For example, the transistors can be MOSFETs, i.e., metal-oxide-semiconductor field-effect transistors. The transistors can be connected in a cascade arrangement. The two transistor switches can be turned on and off complementarily to each other (in particular with a non-overlapping dead time) by applying appropriate voltage waveforms to the control terminals.A desired outcome might be an idealized DC-DC conversion scenario where a rectangular average voltage level switches between a first electrical potential (such as a DC bus voltage) and a second electrical potential (such as ground). However, other output signal shapes are also possible, those that do not exhibit a rectangular characteristic. The two transistors can be interconnected via their connection terminals, thus creating a two-transistor switch with implemented diode characteristics. The aforementioned half-bridge configuration can be used on its own or in combination with one or more other half-bridges (or other electrical circuits) to implement a more complex electrical function. For example, two such half-bridges can form a full bridge.

[0039] In one embodiment, the different connection sections have at least three different thicknesses. To create even more complex electronic connections within the housing, the different connection sections can even have four, five, or even more different thicknesses.

[0040] In one embodiment, the different connecting sections have a first thickness that connects the electronic component, a second thickness that connects another electronic component, and a third thickness that connects the carrier. Such an embodiment is found, for example, in Fig. 7 to Fig. 9 shown.

[0041] In one embodiment, the package includes at least one additional electronic component mounted on the substrate. For example, the package can be a two-die package or, more generally, a multi-die package. The dies can share a common substrate clip, which may include a common intermediate film (which may be made of ceramic). However, different electronic components can also be connected by different substrate clips.

[0042] In one embodiment, the electronic component has at least one terminal facing the substrate clip. For example, several or even all terminals of the electronic component may face the substrate clip. This can be the case, for instance, if the electronic component is a lateral electronic component. A corresponding embodiment is described, for example, in Fig. 7 to Fig. 9 shown.

[0043] In one embodiment, the electronic component has at least one terminal on each of its two opposite main faces. This can be the case, for example, if the electronic component is a vertical electronic component. For instance, such a vertical electronic component can be a transistor chip having a source terminal and a gate terminal on one main face and a drain terminal on the opposite main face of the electronic component.

[0044] In one embodiment, the method involves forming the structured electrically conductive structure with at least two different connection sections of different thicknesses by treating an initial electrically conductive structure using a first mask to form an electrically conductive intermediate structure with a homogeneous thickness, and then treating the electrically conductive intermediate structure using a second mask to obtain the structured electrically conductive structure with the at least two different connection sections of different thicknesses. Such an embodiment is, for example, described in Fig. 10 to Fig. Figure 13 shows that, for example, the "treatment" may involve "etching." However, with regard to the treatment, it may also be possible to deposit an alloy or metal to create different heights. For example, this can be achieved by copper plating. Growing a metal column on an insulating substrate may also be possible. In one embodiment, a DCB or AMB may first be provided, then an etching process may be performed to remove some of the copper to form metal columns. Multiple masking and multiple etching processes can create different height levels. In another embodiment, it may be possible to provide an insulating film or substrate. Then, a masking and metal deposition process may be performed to create metal columns. Multiple masking and multiple deposition processes can make it possible to create different heights.

[0045] In one embodiment, the method involves forming the structured electrically conductive structure with at least two distinct connecting sections of different thicknesses by providing an initial electrically conductive structure of homogeneous thickness, and then attaching at least one column to the initial electrically conductive structure to obtain the structured electrically conductive structure with the at least two distinct connecting sections of different thicknesses. In another alternative solution for producing a substrate clip with two (or more than two) heights, the heights are not defined by etching, but by attaching, soldering, and / or welding another metal column. Attachment can be achieved, for example, by soldering, welding, brazing, deposition, and / or bonding with an additional paste or other medium.Different columns with different thicknesses can be attached to further increase the number of height levels supported by the substrate clip.

[0046] In one embodiment, the package is configured as a power module, for example, a shaped power module such as a semiconductor power package. For example, an exemplary embodiment of the package could be an intelligent power module (IPM). Another exemplary embodiment of the package is a dual inline package (dip).

[0047] In one embodiment, the package is configured as one of the group consisting of a ladder frame-connected power module, a transistor outline package (TO package), a quad flat no-leads package (QFN package), a small outline package (SO package), a small outline transistor package (SOT package), and a thin small outline package (TSOP package). Packages for sensors and / or mechatronic devices are also possible embodiments. Furthermore, exemplary embodiments may also relate to packages that function as nanobatteries or nanofuel cells, or other devices with chemical, mechanical, optical, and / or magnetic actuators.Therefore, according to an exemplary embodiment, the housing is fully compatible with standard housing concepts (in particular, fully compatible with standard TO housing concepts) and appears externally as a conventional housing, which is very convenient for the user.

[0048] In one embodiment, the electronic component is a semiconductor power chip. Thus, the semiconductor component (such as a semiconductor chip) can be used for power applications, for example in the automotive sector, and can, for example, include at least one integrated insulated-gate bipolar transistor (IGBT) and / or at least one transistor of another type (such as a MOSFET, a JFET, etc.) and / or at least one integrated diode. Such integrated circuit elements can, for example, be manufactured using silicon technology or be based on wide-bandgap semiconductors (such as silicon carbide). A semiconductor power chip can comprise one or more field-effect transistors, diodes, inverter circuits, half-bridges, full-bridges, drivers, logic circuits, other devices, etc.

[0049] In one embodiment, the housing comprises several electronic components, in particular semiconductor components, which are encapsulated by the housing encapsulation. Thus, the housing can comprise one or more semiconductor components (for example, at least one passive component, such as a capacitor, and at least one active component).

[0050] A semiconductor substrate, particularly a silicon substrate, can be used as the substrate or wafer that forms the basis of the electronic component(s). Alternatively, a silicon oxide or another insulator substrate can be provided. It is also possible to implement a germanium substrate or a III-V semiconductor material. For example, exemplary embodiments can be implemented using GaN or SiC technology.

[0051] The above and other tasks, features and advantages will become apparent from the following description and the attached claims in conjunction with the accompanying drawings, in which identical parts or elements are designated by the same reference numerals. Brief description of the drawings

[0052] The accompanying drawings, which are included to provide a further understanding of exemplary embodiments and form part of the description, illustrate exemplary embodiments.

[0053] In the drawings: Fig. Figure 1 illustrates a cross-sectional view of a housing with a substrate clip according to an exemplary embodiment. Fig. Figure 2 illustrates a cross-sectional view of a housing with a substrate clip according to another exemplary embodiment. Fig. Figure 3 illustrates a cross-sectional view of a housing with two substrate clips according to another exemplary embodiment. Fig. Figure 4 illustrates a cross-sectional view of a housing with a substrate clip according to another exemplary embodiment. Fig. Figure 5 illustrates a three-dimensional view of part of a substrate clip before and after the creation of different connection sections at different height levels according to an exemplary embodiment. Fig. Figure 6 illustrates a cross-sectional view of a housing with a substrate clip and two electronic components according to another exemplary embodiment. Fig. Figure 7 illustrates a cross-sectional view of a housing with a substrate clip and two electronic components according to another exemplary embodiment. Fig. Figure 8 illustrates a top view of the housing according to Fig. 7. Fig. Figure 9 illustrates a cross-sectional view of a housing with a substrate clip and two electronic components according to another exemplary embodiment. Fig. 10 to Fig. Figure 13 shows cross-sectional views of structures obtained during the execution of a method for manufacturing a substrate clip for a housing according to an exemplary embodiment. Fig. 14 and Fig. Figure 15 shows cross-sectional views of structures obtained during the execution of a method for manufacturing a substrate clip for a housing according to another exemplary embodiment. Fig. Figure 16 illustrates a top view and a cross-sectional view of a conventionally wired half-bridge housing with electronic components in gallium nitride technology. Fig. Figure 17 illustrates a top view and a cross-sectional view of a half-bridge housing with a substrate clip and electronic components in gallium nitride technology according to an exemplary embodiment. Detailed description

[0054] The illustration in the drawing is schematic and not to scale.

[0055] Before exemplary embodiments are described in more detail with reference to the figures, some general considerations are summarized on the basis of which exemplary embodiments were developed.

[0056] Traditionally, substrates such as a direct copper bonding substrate (DCB substrate) can be used as chip carriers. Separately, metallic clips can be three-dimensionally curved metallic plates used to connect components of a package.

[0057] Especially when wide-bandgap semiconductor components are used in a single package, clip bonding can support more complex package designs. At the same time, the industry seeks higher current ratings, minimized inductance, reduced Rdson, and improved thermal performance. While clips can increase package material costs, they can also reduce manufacturing effort compared to wire bonding. For example, clips can be advantageous in gallium nitride chip packages.

[0058] However, there may still be a need for enclosures and associated components that provide improved functionality while allowing for a compact design and low manufacturing costs.

[0059] According to one exemplary embodiment, a substrate with an electrically conductive surface topography can be provided on a primary surface to provide clip functionality in addition to substrate functionality through a single integral electronic element or housing component. Such a substrate clip, when implemented in a housing, can electrically couple a support (such as a conductor frame structure) to an electronic component (for example, a semiconductor chip) while simultaneously providing electrical decoupling and thermal coupling functionality within the housing. The substrate clip can comprise an electrically insulating and thermally conductive film, made, for example, of a ceramic material, and configured, for example, as a flat or planar structure.Such a film can electrically decouple an attached component, such as an electronic component, from the exterior of the housing. Simultaneously, these films can contribute to the dissipation of heat generated by, for example, an encapsulated electronic component within a housing during operation. Advantageously, a structured, electrically conductive layer on a main surface of the film can feature multiple interconnected or separate connection sections, which can be joined at different height levels due to varying thicknesses of the connection sections. Thus, a substrate clip with a simple structure yet extended functionality can be provided, which can be considered a hybrid of a support substrate and a metallic clip.Such a substrate clip can enable the creation of an electrical connection between a support and an electronic component within a housing, requiring minimal manufacturing effort and short connection paths, while simultaneously contributing to electrical insulation and thermal coupling within the housing. This can be achieved by equipping a dielectric and thermally conductive plate with a metallic pattern that features a surface profile with multiple height levels on one side of the plate.

[0060] In one embodiment, the substrate can be configured as a DCB (direct copper bonding clip) or an AMB (active metal brazing clip). Thus, the substrate clip can be based on a DCB or AMB design, but with an electrically conductive structure on a primary surface that has a multi-thickness surface profile to support an electrical connection at two or more different height levels, even when mounted horizontally. More generally, a substrate clip according to an exemplary embodiment can be described as a clip in the form of a substrate. A substrate clip according to an exemplary embodiment can be a clip that can be stacked on a die pad or conductor column and simultaneously incorporates an electrically insulating and thermally conductive foil section.

[0061] For example, a substrate clip can be formed with a clip design that allows separation of the source and drain of a field-effect transistor-type electronic component using thermally conductive but electrically insulating material. In one embodiment, it may be possible to couple the substrate clip with an electronic component in a flip-chip configuration.

[0062] For example, a substrate clip can be configured to reuse an existing front-side and / or back-side metallization. It may also be possible to use a substrate clip according to an exemplary embodiment with an existing die-fixing method, such as soft soldering. Additionally or alternatively, it may be possible to use a substrate clip according to an exemplary embodiment with an existing clip-fixing method, for example, using solder paste (which can be dispensed).

[0063] Advantageously, a substrate clip according to an exemplary embodiment can improve electrical performance and reduce the form factor for greater housing reliability, better heat transfer, and / or ultrafast switching. Furthermore, a substrate clip according to an exemplary embodiment can enable the design of a housing with double-sided cooling due to the high thermal conductivity of the (especially ceramic) film.

[0064] In particular, a housing with double-sided cooling can be formed using a substrate clip according to an exemplary embodiment by exposing the ceramic surface of the substrate clip and / or an electrically conductive structure formed thereon. Embodiments may enable the creation of a single-pass clip connection. Advantageously, one embodiment may allow the DCB clip thickness to be increased to achieve improved thermal performance. In one embodiment, a substrate clip may be arranged on one or more electronic components (such as semiconductor dies) that act as interconnects.

[0065] For example, according to one exemplary embodiment, a substrate clip can be formed by pre-plating a copper surface of a DCB- or AMB-type substrate or a ceramic film thereof. In particular, such a substrate clip can be pre-plated, for example, with NiNiP / Ag to enable a different type of connection. A connection surface of the substrate clip can be pre-plated (for example, with an Ag / NiNiP surface) to provide a contact point with the electronic component and / or the substrate. Furthermore, it may be possible to improve the substrate clip interface for better adhesion to an electronic component (such as a chip) or a substrate (for example, a conductor frame structure).

[0066] In particular, a substrate clip according to an exemplary embodiment can be used with one or more of the following configurations: In one embodiment, the electronic component of a package coupled by a substrate clip can be a wide-bandgap die and / or a lateral die. For example, an electronic component of the package connected to a substrate clip can be a semiconductor chip manufactured using GaN or SiC technology, according to an exemplary embodiment. In the case of down-bond connections, a material interface can be present.

[0067] In one embodiment, a single substrate clip can be provided in a housing and can have two or more different height levels. For example, a structured, electrically conductive substrate clip can be based on a copper layer. The substrate clip can be formed on the basis of a DCB (distributed conductive base). In particular, the top of the substrate clip can be made of a ceramic, and its bottom can be a structured metal to provide two or more different heights for contacting two or more targets at different levels.

[0068] In another embodiment, a substrate clip can have a common ceramic film as a support for two clip sections in the form of differently structured metal sections, wherein the clip sections can be produced by etching a copper layer of a DCB. The vertical part of the metallic clip arrangement can be provided with two, three, or more different heights.

[0069] In some embodiments, it may be possible to lock the substrate clip to a conductor column, for example, by means of a stepped or embossed design. For example, it may be possible for the substrate clip to be in direct contact with a conductor column. For example, no conductive material needs to be present between the source terminal and the drain terminal of a field-effect transistor-type electronic component.

[0070] Fig. Figure 1 illustrates a cross-sectional view of a housing 106 with a substrate clip 100 according to an exemplary embodiment.

[0071] The illustrated housing 106 has a support 102, which here is implemented as a conductor frame structure. Thus, the support 102 can be a structured and bent metal plate, made, for example, of copper or aluminum. As shown, the support 102 has a component arrangement section 128, such as a die pad with an integrally connected conductor section 152, and has another separate conductor section 130.

[0072] Furthermore, the housing 106 includes an electronic component 104, such as a semiconductor chip, mounted on the carrier 102. More precisely, the electronic component 104 is mounted on the die-pad-like component assembly section 128 of the carrier 102. For example, the electronic component 104 could be a field-effect transistor semiconductor chip. The electronic component 104 could be soldered or sintered onto the component assembly section 128.

[0073] Advantageously, the housing 106 includes a substrate clip 100 configured as a hybrid of a substrate and a clip. The substrate clip 100 is connected within the housing 106 for the electrical and mechanical connection of the carrier 102 to the electronic component 104, as described in more detail below. Although shown as an integral part of the housing 106, the substrate clip 100 can be a separate and integral electronic element prior to its arrangement with the other components, such as the carrier 102 and the electronic component 104. The substrate clip 100 consists of an electrically insulating and thermally conductive film 108 and a structured, electrically conductive structure 110 and can be provided as a pre-formed, individual body, which can be used, in particular, as an integral part of the housing 106.

[0074] As shown, the substrate clip 100 features an electrically insulating and thermally conductive film 108. The electrically insulating and thermally conductive film 108 can be a planar body, for example, a flat plate with parallel main surfaces. In particular, the electrically insulating and thermally conductive film 108 can have a homogeneous thickness F. The electrically insulating and thermally conductive film 108 can be made of a ceramic material, for example, silicon nitride or aluminum oxide. Consequently, the film 108 combines reliable dielectric properties with high thermal conductivity.

[0075] Furthermore, the substrate clip 100 has a structured electrically conductive structure 110 on a main surface (in the illustrated embodiment, the lower main surface) of the electrically insulating and thermally conductive film 108. According to Fig. 1 is the opposite main surface (in the illustrated embodiment, the upper main surface) of the electrically insulating and thermally conductive foil 108, free of any metallic covering and thus defined by a ceramic surface. The underside structured electrically conductive structure 110 can, for example, comprise copper and / or aluminum. Advantageously, the surface of the structured electrically conductive structure 110 facing the electronic component 104 and the support 102 has a pronounced surface profile or surface topography, thereby providing several different connection sections 112-115 with different vertical thicknesses and extending to different vertical height levels.More precisely, a first connection section 112 can be formed on a lower surface of a first planar layer section 166 of the electrically conductive structure 110 and, in the illustrated embodiment, is connected to the conductor section 130 of the carrier 102. A second connection section 113 can be formed by a metal column 116 extending downwards from the first planar layer section 166 and, in the illustrated embodiment, connected to a first electrical terminal on an upper main surface of the electronic component 104. A third connection section 114 can be formed by a further metal column 158 extending downwards from a second planar layer section 164 of the electrically conductive structure 110 and connected to a second electrical terminal on the upper main surface of the electronic component 104.A fourth connecting section 115 can be formed by a further metal column 118 extending downwards from the second planar layer section 164 and connected to the component arrangement section 128 of the support 102. In the illustrated embodiment, connecting sections 113 and 114 extend downwards to the same vertical level due to the equal vertical thicknesses of the metal columns 116 and 158. Since the metal column 118 has a greater vertical thickness than the metal columns 116 and 158, connecting section 115 extends further downwards than connecting sections 113 and 114. Furthermore, connecting sections 113 and 114 extend further downwards than connecting section 112 (the latter being formed without a column). Thus, the different connecting sections 112–115 exhibit the following characteristics according to [reference missing]. Fig. 1 three different thicknesses and support electrical connectivity at three different vertical levels in the horizontal orientation of the substrate clip 100 according to Fig. 1. Therefore, the connecting sections 112-115 contribute to a surface profile of the lower surface of the structured electrically conductive structure 110. Consequently, the connecting sections 112-115 of the substrate clip 100 enable connection to electronic elements 130, 104, 128 located at different vertical levels of the housing 106. Before connecting the substrate clip 100 to the other components of the housing 100, the metal columns 116, 158, 118 (for example, copper columns) can already be integrally connected to the electrically isolated planar layer sections 166, 164, thus forming part of the substrate clip 100 and its structured electrically conductive structure 110 prior to the arrangement of the housing 106. Only during the housing assembly are the metal columns 116, 158, 118 connected to the support 102 and the electronic component 104.Therefore, the metal columns 116, 158, 118 initially form an integral part of the clip substrate 100 instead of the electronic component 104 or the support 102. In other words, the metal columns 116, 158, 118 are clip substrate-side.

[0076] As mentioned, the multi-level connection sections 112-115 can establish an electrically conductive connection with electrical terminals of the electronic component 104 and with the component assembly section 128 and the conductor section 130 of the carrier 102. For example, the electrical connection between the respective connection section 112-115 and the connected electronic components or elements (in particular the carrier 102 or the electronic component 104) can be established by an electrically conductive connecting medium, such as solder, sintering paste, or an electrically conductive adhesive.

[0077] With reference to the foregoing description, the electronic component 104 has two terminals facing the substrate clip 100 and away from the component assembly section 128. Furthermore, the electronic component 104 has one additional terminal facing the component assembly section 128 and away from the substrate clip 100. Thus, according to the above description, the electronic component 104 has Fig. 1. Connections on its two opposite main surfaces and can, for example, be a vertical electronic component. In the embodiment shown, the electronic component 104 can be a field-effect transistor chip with a drain connection on the bottom and a source connection and a gate connection on the top.

[0078] Each of the horizontal surface sections of the connecting sections 112-115 can be selectively coated with a plating structure (see reference numeral 120 in Fig. 15) be covered or equipped at an interface area with the respective connected electronic element or component, in the embodiment shown at an interface area with the carrier 102 or with the electronic component 104. The plating structure can enable, improve, or promote the connection between them. For example, such a plating structure can be designed as an Ag / NiNiP layer.

[0079] Some of the different connecting sections 112-115 can be electrically decoupled from each other. In the illustrated embodiment, connecting sections 112 and 113 can be electrically decoupled from connecting sections 114 and 115. It is also possible that some of the different connecting sections 112-115 are electrically coupled to each other. In the illustrated embodiment, connecting sections 112 and 113 are electrically coupled to each other, and connecting sections 114 and 115 are also electrically coupled to each other.

[0080] For example, the substrate clip 100 can be configured as a direct copper bonding type substrate, a direct aluminum bonding type substrate or an active metal brazing type substrate, but with a profiled metallic surface that enables the connection of one or more electronic components on more than one vertical level thanks to different thickness connection sections 112-115 of the substrate clip 100.

[0081] With renewed reference to Fig. The housing 106 has an encapsulation 132, which is implemented here as a molding compound. The encapsulation 132 can, for example, comprise a resin material, in particular an epoxy resin material. The material of the encapsulation 132 can, in particular, comprise a resin such as an epoxy resin material filled with particles, such as SiO₂ or other ceramic particles, for example, Al₂O₃, BN, AlN, Si₃N₄, or diamond. The encapsulation 132 encapsulates a part of the carrier 102, a part of the substrate clip 100, and the entire electronic component 104.

[0082] As in Fig. As shown in Figure 1, the upper main surface of the substrate clip 100 projects from the encapsulation 132. However, the substrate clip 100 can alternatively be coplanar with the encapsulation 132. Advantageously, the upper main surface of the substrate clip 100, which faces the structured electrically conductive structure 110, is free relative to the encapsulation 132 and therefore forms part of an outer surface of the housing 106. More precisely, the upper main surface of the electrically insulating and thermally conductive film 108 forms part of the outer surface of the housing 106. At the bottom of the housing 106, a lower main surface of the metallic component assembly section 128 of the carrier 102 forms part of an outer surface of the housing 106.Thus, a significant portion of the lower main surface of the housing 106 is formed by the metallic material of the support 102, and a significant portion of the upper main surface of the housing 106 is formed by the ceramic material of the substrate clip 100. This configuration results in a double-sided cooling architecture for the housing 106. Heat generated by the encapsulated electronic component 104 during operation of the housing 106 can therefore be efficiently dissipated to a bottom surface through the exposed, highly thermally conductive metallic material of the support 102 and to a top surface through the exposed, highly thermally conductive ceramic material of the substrate clip 100. Advantageously, this allows for the provision of a housing 106 with excellent thermal performance.

[0083] The embodiment of Fig. Figure 1 shows a package 106 comprising a single chip in the form of the electronic component 104 and a single substrate clip 100. In particular, a pre-shaped substrate clip 100 in the form of an AMB-like or DCB-like body with a profiled metallic connection pattern can be provided. In this embodiment, a direct clip-to-column contact can be established. In the embodiment shown, no conductive connection is established between the source and drain. Connection areas of the structured, electrically conductive structure 110 can be selectively pre-plated, for example, with an Ag / NiNiP surface, to provide a respective contact point to the electronic component 104 and the support 102. Bare copper can also be covered. No adhesive or solder may be required on a conductor column area. It may be sufficient to provide adhesive once, dispensed onto a die area.The architecture shown may simplify the clipping process, thereby reducing overall manufacturing effort. A uniform clip height can provide good planarity, which is very suitable for diffusion soldering. A die-on-clip configuration can also be enabled. Based on the [reference to be added]. Fig. In the architecture shown, it may also be possible to provide a multi-chip configuration. This architecture can also be combined with wire bonding.

[0084] Fig. Figure 2 illustrates a cross-sectional view of a housing 106 with a substrate clip 100 according to another exemplary embodiment.

[0085] The embodiment of Fig. 2 differs from the embodiment of Fig. 1 in particular by the fact that according to Fig. 2 The clip substrate 100 has a further electrically conductive structure 126 on a different main surface of the electrically insulating and thermally conductive film 108, opposite its other main surface, which bears the structured electrically conductive structure 110. As shown, the further electrically conductive structure 126 can be a continuous metal layer. The further electrically conductive structure 126 is opposite the structured electrically conductive structure 110. Advantageously, the further electrically conductive structure 126 can be made of solderable material, such as copper. Consequently, the further electrically conductive structure 126, which forms part of an exposed surface of the housing 106, can be soldered to a heat sink (not shown). For example, such a heat sink can have a highly thermally conductive plate connected to several cooling fins.When connected to the further electrically conductive structure 126, the heat sink can further improve the thermal performance of the housing 106 by providing an additional contribution to the dissipation of heat away from the housing 106. For example, such a heat sink can be made of a metallic or a ceramic material.

[0086] Although not shown, in other embodiments for other electronic applications it may be possible that the structured electrically conductive structure 110 of Fig. 2 a single planar layer section instead of two separate planar layer sections 164, 166 as in Fig. 2. In such an embodiment, all connecting sections 112-115 are electrically coupled to each other.

[0087] Fig. Figure 3 illustrates a cross-sectional view of a housing 106 with two substrate clips 100 of different vertical thicknesses according to another exemplary embodiment. Alternatively, the housing configuration of Fig. 3 also cover a single-chip package and a single clip.

[0088] The embodiment of Fig. 3 differs from the embodiment of Fig. 1 in particular by the fact that according to Fig. 3 the housing 106 has two separate substrate clips 100, both of which are partially encapsulated by the same encapsulation 132. According to Fig. The substrate clips (100) are arranged side by side. The substrate clips (100) are arranged according to... Fig. 3 arranged on different vertical planes. Furthermore, the substrate clips 100 can comprise electrically insulating and thermally conductive films 108 of different thicknesses. Providing two or more different DCB- and / or AMB-type substrate clips 100 can further increase the flexibility of the design. In particular, a reduced risk of tilting can be achieved by providing multiple separate substrate clips 100. A uniform substrate clip height can provide good planarity for the respective substrate clip 100, which is particularly suitable for diffusion soldering. Good thermal conductivity can also be achieved with the illustrated design. Moreover, the embodiment shown is particularly suitable for source-down designs.

[0089] Fig. Figure 4 illustrates a cross-sectional view of a housing 106 with a substrate clip 100 according to another exemplary embodiment.

[0090] The embodiment of Fig. 4 differs from the embodiment of Fig. 1 in particular by the fact that according to Fig. 4. The different connection sections 112-115, which provide connection areas at different height levels, are provided by a structured electrically conductive structure 110, which has a first metal sheet section 160 with a first vertical extension s1 and is integrally formed with a second metal sheet section 162 with a second vertical extension s2 that is larger than the first vertical extension s1. The first metal sheet section 160 and the second metal sheet section 162 can be a single piece of metal. Thus, the structured electrically conductive structure 110, according to Fig. 4 a stepped planar metal configuration with a vertical step 170 between the integral metal sheet sections 160, 162 with different thicknesses s1, s2. Advantageously, this design is particularly simple and yet provides a connection with a conductor section 130 and an electronic component 104 on different vertical planes.

[0091] The architecture of Fig. 4 can be particularly advantageous for a vertical chip, wherein the underside of the chip electrically connects the die-pad-like component assembly section 128 and its connecting line, and the top side of the chip is electrically connected to the line sections 130, 152 via this substrate clip 100. This substrate clip 100 can contain a common insulating substrate or a common insulating film 108 and metal columns of different heights.

[0092] Fig. Figure 5 illustrates on the left a three-dimensional view of a portion of a substrate clip 100 (or a preform thereof) before the creation of different connection sections at different height levels according to an exemplary embodiment. On the right, it shows Fig. Figure 5 shows a three-dimensional view of part of a substrate clip 100 after the creation of different connection sections 112-115 of a structured electrically conductive structure 110 at different height levels. For example, the different heights can be formed by multiple etching processes.

[0093] To put it simply, the left side of illustrates Fig. 5, that a metal layer, in particular a copper layer, can be freely structured on an electrically insulating and thermally conductive film 108 to define a structured electrically conductive structure 110 of any desired design. Thus, the surface of a copper layer can be designed according to any desired application. To impose a vertical surface profile on the structured electrically conductive structure 110, a subtractive process (for example, including masking and etching), an additive process (for example, including masking and metal deposition), and / or a metal pillar or column array process can be performed. Examples are given in Fig. 10 to Fig. 15 is given. An example is on the right side of Fig. Figure 5 shows different connecting sections 112-115 of the structured electrically conductive structure 110 with different thicknesses. In this embodiment, each of the connecting sections 112-115 can be shaped as a web or strip.

[0094] Fig. Figure 6 illustrates a cross-sectional view of a housing 106 with a substrate clip 100 and two electronic components 104, 104' according to another exemplary embodiment. Alternatively, the housing design of Fig. 6 also cover a single-chip package and a single clip.

[0095] The embodiment of Fig. 6 differs from the embodiment of Fig. 1 in particular by the fact that according to Fig. 6. Another electronic component 104' is mounted on the carrier 102 and is also electrically coupled by the structured, electrically conductive structure 110 of the substrate clip 100. Thus, two (or more) electronic components 104, 104' can be arranged on the same carrier 102 and can be connected to each other by a common substrate clip 100. More precisely, the carrier 102 has Fig. 6 two die pads or component assembly sections 128, 128, each for supporting a respective electronic component 104, 104'. The structured electrically conductive structure 110 of Fig. Figure 6 has four (instead of two) planar layer sections 164, 166, 174, 176, two for each electronic component 104, 104'. Five metal columns extend from the planar layer sections 164, 166, 174, 176 partly to the same vertical level and partly to a different vertical level to establish electrical connections with the electronic components 104, 104' and optionally the carrier 102. For example, for a leaded half-bridge package, it may be unnecessary to provide a source clip connected to the die pad. For example, a small and short clip may be provided to connect the source pad of a die to the die pad, which is then further connected to the source leads. The planar layer section 166 itself also establishes an electrical connection with the lead section 130 of the carrier 102 through the connecting section 112.Overall, the substrate clip 100 provides six connection sections 112-115, 154, 156.

[0096] Fig. Figure 6 shows that a substrate clip 100 can enable the creation of electrical connections in a housing 106 containing multiple dies. For example, such multiple dies can be gallium nitride dies to form a half-bridge configuration. Interlocking the substrate clip 100 with conductor columns is possible, for example, with a stepped or embossed design.

[0097] Thus, different embodiments can use a single-chip configuration or a dual-chip combination. Even more than two chips can be present in a single package 106. It may also be possible to use a single die pad or multiple die pads, for example, for a half-bridge. Direct clip-to-conductor contact is possible. No conductive material needs to be present between the source and drain. Pre-plating is also possible in this embodiment, for example, by providing an Ag / NiNiP surface for a contact point to a chip. In particular, it may be possible to implement a single-die pad and a multi-die pad with a multi-chip configuration.

[0098] Fig. Figure 7 illustrates a cross-sectional view of a housing 106 with a substrate clip 100 and two electronic components 104, 104' according to another exemplary embodiment. Fig. Figure 8 illustrates a top view of the housing 106 according to Fig. 7. Fig. Figure 9 illustrates a cross-sectional view of another housing 106 with a substrate clip 100 and two electronic components 104, 104' according to another exemplary embodiment.

[0099] In the embodiment of Fig. In the embodiment of 7, the carrier 102 has a substrate with a ceramic film 178 arranged between two opposing metal structures 180, 182 (such as copper layers). For example, the substrate can be a direct copper bonding substrate (DCB substrate), an active metal brazing substrate (AMB substrate), or an insulated metal substrate (IMS). Fig. 9 is the support 102 designed on the basis of one or more metallic plates or as a ladder frame structure. In Fig. 9 The electronic components 104, 104' can be mounted on a common component arrangement section 128 of the carrier 102 by means of an electrically insulating connecting medium 184, such as a non-conductive adhesive.

[0100] In the illustrated embodiments, the electronic components 104, 104' can be lateral dies. Source, drain, and gate pads are arranged on the upper main surface of the semiconductor die-type electronic components 104, 104'. Furthermore, each of the electronic components 104, 104' can include a high electron mobility transistor (HEMT).

[0101] In both embodiments of Fig. 7 and Fig. 9. Electronic component 104 and the further electronic component 104', which have different vertical thicknesses, are connected in a half-bridge configuration by means of the substrate clip 100. To achieve this, the different connecting sections 112-115, 154, 156 have a first thickness (see connecting sections 112, 113) that connects the thicker electronic component 104, a second thickness (see connecting sections 114, 115) that connects the thinner further electronic component 104', and a third thickness (see connecting sections 154, 156) that connects conductor sections 130 of the carrier 102 at a higher height than the electronic components 104, 104. Simply put, connecting sections 114, 115 can have a first vertical thickness that is greater than the second vertical thickness of connecting sections 112, 113.The second vertical thickness can be greater than a third vertical thickness of the connecting sections 154, 156.

[0102] In particular, the Fig. 7- Fig. 9 a half-bridge configuration. For example, the substrate clip 100 has three (or more generally at least three) different connection heights. The columns 116', 116'' are connected to the same die or electronic component 104, which can connect the high side of the half-bridge configuration (i.e., the first die). More precisely, column 116' can be connected to the drain terminal of the first die, and column 116'' can connect to the source terminal of the first electronic component 104. In this configuration, columns 116' and 116'' have the same height but are electrically decoupled or separated along the lower surface of the substrate clip 100. Columns 118', 118'' are connected to the other die or further electronic component 104', which can correspond to the low side of the half-bridge, i.e., the second die.More precisely, column 118' can be connected to the drain terminal of the second die, and column 118'' can connect to the source terminal of the second electronic component 104'. Source, drain, and gate connections are shown in . Fig. Figure 8 shows that columns 118' and 118'' have the same height but are electrically decoupled from each other (as described above for columns 116' and 116''). Furthermore, columns 116'' and 118' can be connected to each other via the lower metal structure of the substrate clip 104. Thus, due to the connection with the electronic components 104 and 104', there are already two different heights for this substrate clip 104.

[0103] If the substrate clip 100 cannot easily rest on the left and right conductors of the conductor sections 130, 130 (for example, if the height of the columns 116', 116'' and 118', 118'' does not correspond to the height difference between the position of the left / right conductors compared to the upper surfaces of the first and second dies), then there can be a further fifth column 117 or other conductive structure and a sixth column 119 or other conductive structure for the substrate clip 104 to compensate for the height difference, so that the substrate clip 100 can be easily attached to the conductor sections 130, 130 regardless of the height difference.

[0104] As in Fig. As can be seen in Figure 8, the lower metal layer of the substrate clip 100 is structured to form a connecting wiring 186.

[0105] One advantage of the illustrated exemplary embodiments can be seen in the extremely short connection paths between the electrical components 104, 104', which can reduce or even minimize parasitic inductances of the electrical connections between the contact pads of the semiconductor transistor dies and external contacts. These parasitic inductances can lead to a delay in the power rise rates in the main current path between source and drain. Particularly at high load currents and high current rate variations, even small parasitic inductances can lead to significant voltage drops in the electrical connections.

[0106] Fig. 10 to Fig. Figure 13 shows cross-sectional views of structures obtained during the execution of a method for manufacturing a substrate clip 100 for a housing 106 according to an exemplary embodiment.

[0107] With reference to Fig. 10. The starting point of the manufacturing process can be an electrically insulating and thermally conductive film 108. For example, the film 108 can be a planar ceramic plate with a constant thickness F.

[0108] An initial electrically conductive structure 132, such as a metal layer (for example, made of copper), with a constant thickness d2, can be applied to a main surface of the film 108. Subsequently, a first mask 134 can be formed on defined parts of the initial electrically conductive structure 132, for example, by lithography or by structured deposition.

[0109] With reference to Fig. 11 A structured, electrically conductive intermediate structure 136 with homogeneous thickness d2 is formed by the in Fig. The structure shown in Figure 10 is subjected to etching to selectively remove exposed metallic material from the initial electrically conductive structure 132. The etching process can be selected such that the first mask 134 protects the underlying metallic material from being removed by etching. After this metal etching process, the first mask 134 can be removed, for example, by stripping. This treatment leads to the structure shown in Figure 10. Fig. 11 structure shown with a structured electrically conductive intermediate structure 136 with continuous thickness d2.

[0110] With reference to Fig. In step 12, a portion of the electrically conductive intermediate structure 136 is then covered by a structured second mask 138. The second mask 138 can be applied, for example, by lithography or by structured deposition. The structured electrically conductive intermediate structure 136 with homogeneous thickness d2 is then subjected to etching to selectively thin exposed metallic material of the electrically conductive intermediate structure 136. The etching process can be selected such that the second mask 138 protects the underlying metallic material from being removed by etching. After this etching process, the second mask 138 can be removed, for example, by stripping.

[0111] The in Fig. The structure shown in section 13 is based on the following: Fig. The etching and mask removal process described in 12 is obtained. This treatment leads to the result described in Fig. Figure 13 shows a structured electrically conductive structure 110 with two different connecting sections 112, 113 with different thicknesses d1, d2. The connecting section 112 with the smaller thickness d1 corresponds to a section of the structured electrically conductive intermediate structure 136, which, with respect to the second mask 138, is shown above with reference to Fig. The connection section 113 with the greater thickness d2 corresponds to another section of the structured electrically conductive intermediate structure 136, which was exposed during the etching process described above. Fig. The etching process described in section 12 was covered by the second mask 138. Thus, it shows Fig. 13 the result of the method for forming the structured electrically conductive structure 110 on a main surface of the electrically insulating and thermally conductive film 108 such that the structured electrically conductive structure 110 has two different connecting sections 112, 113 with different thicknesses d1, d2.

[0112] The person skilled in the art will understand that more than two different connection sections with at least three different thicknesses can be obtained, for example, by adding one or more further masking processes.

[0113] With renewed reference to the Fig. 12 and Fig. If the second mask 138 is used to cover the right-hand connection structure (with height d2), then after this treatment process (which can be an etching process), the left-hand connection structure can be lower (with height d1) than the right-hand connection structure (which remains at height d2). Thus, the masking can be at the final highest column height d2. Then, one of the connection structures can be etched away by a certain height to reduce its thickness to d1. Optionally, it may be possible to mask again and then etch again to create three (or more) different height levels.

[0114] Fig. 14 and Fig. Figure 15 shows cross-sectional views of structures obtained during the execution of a method for producing a substrate clip 100 for a housing 106 according to another exemplary embodiment.

[0115] With reference to Fig. 14 The starting point of the manufacturing process can be the provision of a structured initial electrically conductive structure 150 (for example, with a homogeneous thickness d0) on an electrically insulating and thermally conductive film 108, which is made, for example, from a ceramic with a homogeneous thickness F. The in Fig. The structure shown in 14 can, for example, be described above with reference to Fig. 10 and Fig. 11 will be described.

[0116] With reference to Fig. 15. Metallic pins or columns 116, 118 can then be attached to selected surface sections of the initial electrically conductive structure 150 to obtain a structured electrically conductive structure 110 with different connection sections 112-115 of different thicknesses d0, d1, d2. This can be achieved by connecting a first metal column 116 and a second metal column 118 with different vertical extensions 11, 12 to different sections of the initial electrically conductive structure 150 of initial thickness d0. This can result in a first connection section 112 with thickness d1, a second connection section 113 with thickness d0, a third connection section 114 (which is electrically decoupled from the second connection section 113) with thickness d0, and a fourth connection section 115 with thickness d2.

[0117] It may also be possible to selectively cover one, some, or all connection sections 112-115 with a plating structure 120 at an interface area with an electronic component to be connected, for example, a carrier 102 or an electronic component 104. In the embodiment shown, only the flange surfaces of the columns 116, 118 were covered with the plating structure 120.

[0118] Fig. Figure 16 illustrates a top view and a cross-sectional view of a conventionally wired half-bridge housing 200 with electronic components 202, 204 made of gallium nitride technology. The electronic components 202, 204 are connected to each other by bond wires 206 and are mounted on a carrier 208.

[0119] Fig. Figure 17 illustrates a top view and a cross-sectional view of a half-bridge housing 106 with a substrate clip 100 and electronic components 104, 104' in gallium nitride technology according to an exemplary embodiment. Fig. The connection is achieved via substrate clip 100, which has connection sections 112-115 and 154-156. For electronic component 104, the source connection is designated by reference numeral 210, the drain connection by reference numeral 212, and the gate connection by reference numeral 214. For electronic component 104', the source connection is designated by reference numeral 220, the drain connection by reference numeral 222, and the gate connection by reference numeral 224. This half-bridge configuration has a connection between the source of the high-side die and the drain of the low-side die, which can be continuous.

[0120] As a comparison of Fig. 16 with Fig. As can be seen from 17, the connection architecture of the housing 106 can be significantly simplified compared to the housing 200.

[0121] It should be noted that the term "having" does not exclude other elements or features, and "one" or "an" does not exclude several. Elements described in connection with different embodiments may also be combined. It should also be noted that reference numerals should not be interpreted as limiting the scope of the claims. Furthermore, the scope of the present application is not intended to be limited to the specific embodiments of the process, machine, manufacture, composition, means, methods, and steps described in the description. Accordingly, the appended claims are intended to include such processes, machines, manufacture, compositions, means, methods, or steps within their scope.

Claims

[1] Substrate clip (100) for connecting a carrier (102) to an electronic component (104) of a housing (106), wherein the substrate clip (100) comprises the following: • an electrically insulating and thermally conductive film (108); and • a structured electrically conductive structure (110) on a main surface of the electrically insulating and thermally conductive film (108) and with at least two different connecting sections (112-115) with different thicknesses (d1, d2). [2] Substrate clip (100) according to claim 1, wherein at least one of the at least two different connecting sections (112-115) has a metal column (116). [3] Substrate clip (100) according to claim 1 or 2, wherein the at least two different connecting sections (112-115) have a first metal column (116) and a second metal column (118) with different vertical extensions (11, 12). [4] Substrate clip (100) according to one of claims 1 to 3, wherein the at least two different connecting sections (112-115) have a first metal sheet section (160) and a second metal sheet section (162) with different vertical extensions (s1, s2). [5] Substrate clip (100) according to one of claims 1 to 4, wherein at least one of the at least two different connecting sections (112-115) has a plating structure (120) at an interface area with a carrier (102) or with an electronic component (104). [6] Substrate clip (100) according to any one of claims 1 to 5, comprising one of the following features: wherein different of the at least two different connecting sections (112-115) are electrically decoupled from each other; wherein several of the at least two different connecting sections (112-115) are electrically coupled to each other. [7] Substrate clip (100) according to any one of claims 1 to 6, wherein the electrically insulating and thermally conductive film (108) is flat with homogeneous thickness (F). [8] Substrate clip (100) according to any one of claims 1 to 7, wherein the electrically insulating and thermally conductive film (108) comprises or consists of a ceramic. [9] Substrate clip (100) according to one of claims 1 to 8, comprising a further electrically conductive structure (126), in particular made of solderable material, on a opposite other main surface of the electrically insulating and thermally conductive film (108). [10] Substrate clip (100) according to claim 9, wherein the further electrically conductive structure (126) is a continuous layer, in particular with homogeneous thickness. [11] Substrate clip (100) according to any one of claims 1 to 10, wherein the substrate clip (100) is configured as one of a direct copper bonding type substrate, a direct aluminum bonding type substrate and an active metal brazing type substrate. [12] Housing (106) comprising the following: • a carrier (102); • an electronic component (104) mounted on the carrier (102); and • a substrate clip (100) according to one of claims 1 to 11, which connects the carrier (102) to the electronic component (104), wherein at least one of the at least two different connecting sections (112-115) establishes an electrically conductive connection with the carrier (102) and at least one other of the at least two different connecting sections (112-115) establishes an electrically conductive connection with the electronic component (104). [13] Housing (106) according to claim 12, comprising at least one of the following features: the housing (106) has at least one further substrate clip (100) according to one of claims 1 to 11; wherein the substrate clip (100) connects at least two different sections (128, 130) of the carrier (102) and / or connects at least two electronic components (104); wherein the carrier (102) has a component arrangement section (128) on which the electronic component (104) is mounted, and has at least one conductor section (130) which is electrically coupled to the at least one electronic component (104) and / or to the component arrangement section (128), wherein in particular the component arrangement section (128) is connected to one of the at least two connection sections (112, 114) and the at least one conductor section (130) is connected to another of the at least two connection sections (112, 114). [14] Housing (106) according to claim 12 or 13, comprising at least one of the following features: wherein the main surface of the substrate clip (100), which is opposite the structured electrically conductive structure (110), forms part of an outer surface of the housing (106); wherein a main surface of the support (102) forms part of an outer surface of the housing (106). [15] Housing (106) according to any one of claims 12 to 14, comprising an encapsulation (132), for example a molding compound, which encapsulates a part of the carrier (102), at least a part of the substrate clip (100) and at least a part of the electronic component (104), wherein in particular the substrate clip (100) protrudes from the encapsulation (132) or is coplanar with the encapsulation (132). [16] Housing (106) according to any one of claims 12 to 15, wherein the electronic component (104) is arranged in a flip-chip configuration and has an active area on its front side which is connected to the carrier (102). [17] Housing (106) according to any one of claims 12 to 16, comprising at least one of the following features: wherein the electronic component (104) and another electronic component (104') are connected in a half-bridge configuration; wherein the different connecting sections (112-115) have at least three different thicknesses; wherein the different connecting sections (112-115) have a first thickness that connects the electronic component (104), a second thickness that connects another electronic component (104'), and a third thickness that connects the carrier (102); comprising at least one further electronic component (104') mounted on the carrier (102); wherein the electronic component (104) has at least one connection facing the substrate clip (100); wherein the electronic component (104) has at least one connection on each of its two opposite main faces; wherein the electronic component (104) is a vertical electronic component; wherein the electronic component (104) is a lateral electronic component. [18] Method for manufacturing a substrate clip (100) for connecting a carrier (102) to an electronic component (104) of a housing (106), wherein the method comprises: • Providing an electrically insulating and thermally conductive film (108); and • Forming a structured electrically conductive structure (110) on a main surface of the electrically insulating and thermally conductive film (108) such that the structured electrically conductive structure (110) has at least two different connecting sections (112-115) with different thicknesses (d1, d2). [19] Method according to claim 18, wherein the method comprises forming the structured electrically conductive structure (110) with the at least two different connecting sections (112-115) with different thicknesses (d1, d2) by: Treating an initial electrically conductive structure (132) using a first mask (134) to form an electrically conductive intermediate structure (136) with a homogeneous thickness (d2); and then treating the electrically conductive intermediate structure (136) using a second mask (138) to obtain the structured electrically conductive structure (110) with at least two different connecting sections (112-115) with different thicknesses (d1, d2). [20] Method according to claim 18, wherein the method comprises forming the structured electrically conductive structure (110) with the at least two different connecting sections (112-115) with different thicknesses (d1, d2) by: Providing an initial electrically conductive structure (150) with a homogeneous thickness (d0); and then attaching at least one column (116, 118) to the initial electrically conductive structure (150) to obtain the structured electrically conductive structure (110) with at least two different connecting sections (112-115) with different thicknesses (d1, d2).

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