PHOTONIC DEVICES AND SYSTEMS WITH PHOTONIC DEVICES

Abstract

A photonic device comprises a first interface designed to couple a plurality of first waveguides of the photonic device to a plurality of waveguides of a light source, and a second interface designed to couple a plurality of second waveguides of the photonic device to a plurality of waveguides of an atom trap device. The number of first waveguides in the plurality is smaller than the number of second waveguides in the plurality. The first pitch of the plurality of first waveguides is larger than the second pitch of the plurality of second waveguides.

Description

TECHNICAL AREA

[0001] The present disclosure relates to photonic devices and systems containing photonic devices. BACKGROUND

[0002] Atom trap devices must be scaled to capture a large number of atoms to enable practical applications. Such scaling may require, among other things, the appropriate integration of photonics for laser light delivery. In some applications, at least four laser beams per atom capture site may be required to control potentially hundreds of atoms independently. As atom traps are scaled to larger dimensions, an increasing number of laser beams presents a significant challenge regarding optical access to the atom trap device. In this context, it may be desirable to provide solutions that allow for simple and straightforward scaling of atom trap devices to increase the number of captured atoms while overcoming the aforementioned problems. SUMMARY

[0003] One aspect of the present disclosure relates to a photonic device. The photonic device comprises a first interface designed to couple a plurality of first waveguides of the photonic device with a plurality of waveguides of a light source, and a second interface designed to couple a plurality of second waveguides of the photonic device with a plurality of waveguides of an atom trap device. The number of first waveguides in the plurality is smaller than the number of second waveguides in the plurality. The first pitch of the plurality of first waveguides is larger than the second pitch of the plurality of second waveguides.

[0004] Another aspect of the present disclosure relates to a system. The system comprises a light source with a plurality of waveguides, an atom trap device with a plurality of waveguides, and a first photonic device. The first photonic device comprises a first interface designed to couple a plurality of first waveguides of the photonic device to the plurality of waveguides of the light source, and a second interface designed to couple a plurality of second waveguides of the photonic device to the plurality of waveguides of the atom trap device. The number of first waveguides in the plurality is smaller than the number of second waveguides in the plurality. The first pitch of the plurality of first waveguides is larger than the second pitch of the plurality of second waveguides.

[0005] Experts will recognize further features and advantages after reading the following detailed description and examining the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure is illustrated by means of examples and without limitation in the figures of the accompanying drawings, in which the same reference numerals refer to similar or identical elements. The elements of the drawings are not necessarily to scale with one another. The features of the various examples shown may be combined, provided they are not mutually exclusive. Fig. Figure 1 schematically illustrates a diagram of a photonic device 100 according to the disclosure. Fig. Figure 2 schematically illustrates a diagram of a System 200 according to the revelation. Fig. Figure 3 schematically illustrates a cross-sectional side view of a system 300 according to the disclosure. Fig. Figure 4 schematically illustrates a diagram of a System 400 according to the revelation. Fig. Figure 5 schematically illustrates a diagram of a System 500 according to the revelation. Fig. Figure 6 schematically illustrates a cross-sectional side view of a connection between an atom trap device and a photonic device according to the disclosure. Fig. Figure 7 schematically illustrates a cross-sectional side view of a connection between an atom trap device and a photonic device according to the disclosure. Fig. Figure 8 schematically illustrates a cross-sectional side view of a connection between an atom trap device and a photonic device according to the disclosure. Fig. Figure 9 schematically illustrates a cross-sectional side view of a connection between a light source and a photonic device according to the disclosure. Fig. Figure 10 schematically illustrates a cross-sectional side view of a connection between a light source and a photonic device according to the disclosure. Fig. Figure 11 schematically illustrates a cross-sectional side view of connections between a light source, an atom trap device and a photonic device according to the disclosure. Fig. Figure 12 schematically illustrates a cross-sectional side view of connections between a light source, an atom trap device and a photonic device according to the disclosure. Fig. Figure 13 schematically illustrates a perspective view of a connection between an atom trap device and a photonic device according to the disclosure. Fig. Figure 14 schematically illustrates a perspective view of a connection between an atom trap device and a photonic device according to the disclosure. Fig. Figure 15 schematically illustrates a side view of a connection between a light source and a photonic device according to the disclosure. Fig. Figure 16 schematically illustrates a side view of a connection between a light source and a photonic device according to the disclosure. Fig. 17 contains the Fig. Figures 17A to 17C, which schematically illustrate cross-sectional side views of arrangements of waveguides contained in a photonic device according to the disclosure. Fig. 18 contains the Fig. 18A and Fig. 18B, which schematically illustrate cross-sectional side views of arrangements of waveguides contained in a photonic device according to the disclosure. DETAILED DESCRIPTION

[0007] The following description refers to photonic devices that can be coupled with atom trap devices and further refers to systems that include both photonic devices and atom trap devices. In particular, the atom trap devices described in this context can correspond to ion trap devices designed to capture ions (charged atoms or molecules) and control the captured ions. Atom trap devices can be implemented as atom trap chips in the form of small, microfabricated devices designed to capture and manipulate individual atoms in a controlled manner. It should be noted that the following description is not limited to atoms but can also be applied to ions, molecules, or other quantum particles / systems (e.g., electrons or defect centers).

[0008] In some examples, the atom trap devices described herein can be used for quantum computing, but their applications are not limited to this. Trapped atoms (especially trapped ions) are one of the most promising candidates for use as qubits in quantum computers because they can be trapped using electromagnetic fields with relatively long lifetimes. In this context, any atom can represent a physical qubit. However, atom trap devices are not limited to quantum computing applications. The atom trap devices described herein can also be used for other applications (such as atomic clocks).

[0009] With reference to Fig. Figure 1 shows a diagram of a photonic device 100 according to the disclosure. The photonic device 100 can also be referred to as a photonic chip or photonic add-on chip. The photonic device 100 can include a first interface 2 designed to couple a plurality of first waveguides 4 of the photonic device 100 with a plurality of waveguides of a light source (not illustrated). Additionally, the photonic device 100 can include a second interface 6 designed to couple a plurality of second waveguides 8 of the photonic device 100 with a plurality of waveguides of an atom trap device (not illustrated). The number of first waveguides 4 in the plurality can be smaller than the number of second waveguides 8 in the plurality.Furthermore, a first pitch p1 of the plurality of first waveguides 4 can be larger than a second pitch p2 of the plurality of second waveguides 8.

[0010] The first pitch p1 and the second pitch p2 between two adjacent waveguides can be specified as the distance between the center of one waveguide and the center of its adjacent waveguide, as in Fig. The first pitch p1 between two adjacent first waveguides 4 can be greater than approximately 100 µm. In specific, but not limiting, examples, the first pitch p1 can be in a range between 100 µm and 300 µm, for example, having a value of approximately 127 µm or approximately 250 µm. The second pitch p2 between two adjacent second waveguides 8 can be less than approximately 10 µm. Since p1 > p2, the photonic device 100 can provide a reduction in the pitch values. In the illustrated example, the first pitch p1 and the second pitch p2 can each be the same (or fixed) for all adjacent waveguides. However, it is understood that in other examples, one or both of the first pitch p1 and the second pitch p2 can vary for two or more adjacent waveguides. For example, the second pitch p2 can exhibit a variation of pitches in a range from about 3 µm to about 10 µm.In further examples, a first set of the first waveguide 4 (or the second waveguide 8) can have a certain pitch, while a second set of the first waveguide 4 (or the second waveguide 8) can have a different pitch.

[0011] The number of first waveguides 4 and second waveguides 8, as shown in the illustrated example, is exemplary and in no way limiting. In general, the ratio of the number n1 of the plurality of first waveguides 4 to the number n2 of the plurality of second waveguides 8 (i.e., n1 / n2) can be less than or equal to approximately 1 / 10. In a non-limiting example, the number n1 of first waveguides 4 can be 10 and the number n2 of second waveguides 8 can be 100, so that the ratio n1 / n2 is equal to 1 / 10. More generally, the number n1 of first waveguides 4 can be less than approximately 100, while the number n2 of second waveguides 8 can be greater than approximately 100. Since n1 <n2, kann die photonische Vorrichtung 100 die Anzahl der Wellenleiter zwischen der ersten Schnittstelle 2 und der zweiten Schnittstelle 6 erhöhen.

[0012] The first waveguides 4 and / or the second waveguides 8 can be configured to transmit electromagnetic waves with wavelengths in the range of approximately 350 nm to approximately 1800 nm. In particular, the first waveguides 4 and / or the second waveguides 8 can contain or be equivalent to optical waveguides. For example, the first waveguides 4 and / or the second waveguides 8 can be equivalent to or contain at least one rectangular waveguide, finned waveguide, slotted waveguide, photonic crystal waveguide, diffuse waveguide, laser-written waveguide, or the like. The first waveguides 4 and / or the second waveguides 8 can contain or consist of at least one silicon nitride, aluminum oxide, titanium oxide, lithium niobite, lithium tantalate, barium titanate, silicon, indium phosphate, polymer materials, or the like.The material of the waveguide can sometimes be referred to as a core material (or an active material) of the waveguide.

[0013] It is understood that the dimensions of waveguides 4 and / or 8 and the pitches between waveguides 4 and / or 8 may depend, in particular, on the wavelength of the transmitted electromagnetic waves. For rectangular waveguides with a cross-sectional area of ​​height h and width w, exemplary values ​​are provided in Table 1 below. These exemplary values ​​are for silicon nitride waveguides completely enclosed in a silicon oxide cladding. The columns of Table 1 (from left to right) indicate the wavelength λ in nm, the associated application (ion or band), the height h of the waveguide, the width w of the waveguide, a waveguide mode used, and a pitch p between adjacent waveguides in µm. The pitch p may, in some examples, result in crosstalk of -60 dB / 100 µm.For other geometries, such as a waveguide with a round section, these values ​​may differ. λ (nm) Anwendung h (nm) w (nm) Mode p (µm) 369 171Yb+ 100 120 TE 1,2 397 40Ca+ 100 150 TE 1,3 422 88Sr+ 150 180 TE 1,1 493 Ba137+ 150 200 TE 1,5 674 88Sr+ 200 400 TE 1,9 729 40Ca+ 200 450 TE 2,1 935 Yb171+ 200 700 TE 2,9 1092 88Sr+ 350 450 TE 3,2 1310 O-Band 350 550 TE 4,2 1550 C-Band 350 600 TE 5,0 1762 137Ba+ 350 700 TE 7

[0014] In the Fig. In the illustrated example 1, the first interface 2 and the second interface 6 are indicated by dashed lines. For example, the first interface 2 can contain at least one of a Spot Size Converter (SSC) or a grid structure. Exemplary implementations of the first interface 2 are shown in conjunction with the Fig. 9 and Fig. Figure 10 shows and describes the second interface 6, which can, for example, contain at least one of a lattice structure or a taper structure. Exemplary implementations of the second interface 6 are shown in conjunction with the... Fig. 6, Fig. 7 to Fig. 8 shown and described.

[0015] The photonic device 100 can contain at least one active photonic component 10. In the example shown, the photonic device 100 can contain, by way of example, one active photonic component 10. However, it is understood that in further examples, photonic devices according to the disclosure can comprise a plurality of active photonic components, as in the examples of Fig. 4 and Fig. Figure 5 shows that the active photonic component 10 can be configured to receive one or more electromagnetic waves (e.g., laser light) from a plurality of waveguides of a light source via the plurality of first waveguides 4. Furthermore, the active photonic component 10 can be configured to process the received electromagnetic waves based on at least one control signal. The active photonic component 10 can be configured to output the processed electromagnetic waves via the plurality of second waveguides 8 to a plurality of waveguides of an atom trap device.It is understood that (alternatively or additionally) a reverse process can be carried out in which one or more electromagnetic waves can pass from the atom trap device to the photonic device 100 via the second interface 6, as well as the case in which one or more electromagnetic waves can pass from the photonic device 100 to one or more fibers via the first interface 2.

[0016] The (at least one) active photonic component 10 can be designed to perform one or more modes of operation on the electromagnetic waves received from the light source. In particular, the active photonic component 10 can be designed to perform at least one of the following operations on the electromagnetic waves received from the light source: dividing, tuning, detecting, switching, modulating, amplifying, attenuating, phase-changing, combining, filtering, polarization-changing, harmonic generation, supercontinuum generation, frequency up / down conversion, or mixing. For this purpose, the active photonic component 10 can contain one or more active photonic elements to perform these operations.As a result, in addition to reducing the pitch and increasing the number of waveguides as previously described, the photonic device 100 can also be designed to process electromagnetic waves received from the light source and output the processed electromagnetic waves to the atom trap device.

[0017] The control signal provided to the active photonic component 10 can be designed to control the aforementioned operating modes performed by the active photonic component 10. In a first case, the control signal can, for example, contain or correspond to a radio frequency (RF) signal. Here, the control signal can be provided by a controller or control chip (not illustrated), which can be electrically coupled to the active photonic component 10 via one or more electrical contacts (or contact pads) 12, which can be arranged around a circumference of the photonic device 100. For example, the controller can contain or correspond to an ASIC. In a second case, the control signal can contain or correspond to an optical signal, which can be provided, for example, via one or more of the first waveguides 4, for example, from the light source.The optical signal can be encoded and / or multiplexed via one or very few waveguides of the light source. In further embodiments, the control signal can be a digital or analog electrical signal provided by a controller.

[0018] With reference to Fig. Figure 2 shows a diagram of a system 200 according to the disclosure. The system 200 can include a light source 14 with a plurality of waveguides 16, an atom trap device 18 with a plurality of waveguides 20, and a photonic device 100. The photonic device 100 can have some or all of the features of the photonic device 100 described above. Fig. 1. The plurality of first waveguides 4 of the photonic device 100 can be coupled to the plurality of waveguides 16 of the light source 14 via the first interface 2 of the photonic device 100. More precisely, each of the first waveguides 4 can be connected to one of the waveguides 16. Additionally, the plurality of second waveguides 8 of the photonic device 100 can be coupled to the plurality of waveguides 20 of the atom trap device 18 via the second interface 6 of the photonic device 100. More precisely, each of the second waveguides 8 can be connected to one of the waveguides 20.

[0019] For example, the light source 14 can contain or correspond to at least one fiber array, and the plurality of waveguides 16 can correspond to a plurality of optical fibers of the fiber array. The optical fibers of the fiber array can be connected to the waveguides 4 of the photonic device 100 via the first interface 2. The atom trap device 18 can be implemented as an atom trap chip in the form of a small, microfabricated device designed to trap and manipulate individual atoms in a controlled manner. In particular, the atom trap device 18 can be an ion trap device (or an ion trap chip). The atom trap device 18 can include one or more electrical contacts 22 for electronic access. A more detailed structure of an exemplary fiber array and atom trap device included in a system according to the disclosure is available in conjunction with Fig. 3 shown and described.

[0020] To enable applications of practical interest, the atom trap device 18 may need to be scaled up to a large number of trapped atoms (or ions). Such scaling may require appropriate integration of photonics for laser light delivery. For example, some applications may require at least four laser beams per trap site to control dozens or hundreds of atoms independently. That is, as the atom trap device 18 is scaled up to larger dimensions, an increasing number of laser beams can pose a significant challenge with regard to optical access to the device. Furthermore, the number of fiber inputs can increase very rapidly, and in addition to waveguides for routing and gratings for coupling, further photonic elements may be required for sharing, modulation, and efficient fiber-to-chip coupling.

[0021] The photonic device 100 can provide a solution to overcome and resolve the aforementioned problems. The photonic device 100 can represent a dedicated photonic interface between the light source 14 and the atom trap device 18, whereby some or even all photonic functions of the atom trap device 18 can be separated and combined within the photonic device 100. In this way, a compact separation of suitable photonics, e.g., for laser light supply, can be achieved. The photonic device 100 can enable efficient coupling from the light source 14 (such as optical fibers) into the atom trap device 18 by means of suitable mode conversion provided at interfaces 2 and 6. Additionally, as previously described in conjunction with Fig. As described in Figure 1, the number of waveguides at output interface 6 is increased compared to the number of waveguides at input interface 2. This increase in the number of waveguides also allows for an increase in the number of laser beams provided to the atom trap device 18 for controlling the trapped atoms. Scaling the atom trap device 18 to a large number of trapped atoms can thus be supported in a simple and straightforward manner.

[0022] With reference to Fig. Figure 3 shows a cross-sectional side view of a system 300 according to some aspects of the disclosure. The system 300 may include some or all of the features of the examples described above. In particular, it may Fig. 3 as a cross-section of Fig. 2. The system 300 can include an atom trap device 18, a photonic device 100 according to the disclosure, and a light source 14, which can be arranged above a support substrate 24. For example, the support substrate 24 can contain or correspond to a PCB, an interposer chip, or the like. A first interface 2 between the photonic device 100 and the light source 14 and a second interface 6 between the photonic device 100 and the atom trap device 18 are indicated by dashed vertical lines.

[0023] The atom trap device 18 can include a substrate 26, which may contain or consist of at least one of the following materials: silicon, silicon carbide, quartz glass, sapphire, glass, aluminum nitride, or diamond. The atom trap device 18 can be mounted on the top surface of the support substrate 24. A vertical dimension of the substrate 26 can, for example, be in the range of approximately 200 µm to approximately 800 µm. The atom trap device 18 can further include a dielectric material 28 arranged above the top surface of the substrate 26 and a plurality of waveguides 20 embedded in the dielectric material 28. The dielectric material 28 can be configured as a surrounding medium or as a cladding material for the waveguides 20.For example, the dielectric material 28 may contain or correspond to an oxide, while the waveguides 20 may contain or consist of materials as described in connection with the previous examples. In the specific cross-sectional side view of . Fig. Figure 3 shows only one waveguide 20 for the sake of simplicity. However, it is understood that the atom trap device 18 can contain multiple waveguides 20, as e.g. in Figure 3. Fig. Figure 2 shows that a dimension of the dielectric material 28 in the vertical direction can, for example, be in a range of about 3 µm to about 10 µm or more.

[0024] The atom trap device 18 can include a structured metal layer 30 arranged over the dielectric material 28. The structured metal layer 30 can form a plurality of electrodes 32 of the atom trap device 18, so that the structured metal layer 30 can also be referred to as a structured electrode layer. For example, the structured metal layer 30 can contain or consist of a metal, a coated metal, or a metal alloy, such as at least one of aluminum, copper, gold, or alloys thereof. The structured metal layer 30 (or the electrodes 32) can be designed to generate at least one magnetic, electric, or electromagnetic field to trap and / or control atoms (or ions) in a zone above the structured metal layer 30.Atoms trapped in or by the atom trap device 18 can be shuttled (or transported) along shuttling paths of the atom trap device 18. For example, the shuttling paths can extend above the structured metal layer 30, which contains the electrodes 32. In particular, a shuttling path can be arranged in a plane above (and especially parallel to) the structured electrode layer 30. Time-dependent electric fields can be used to shutt atoms along the shuttling paths. Atomic shuttling can be controlled by electrical voltages applied to the electrodes 32. In this context, the atom trap device 18 can further include at least one unit (not illustrated) designed to control the electrical voltages applied to the electrodes 32, such as a controller or a control chip.

[0025] In some examples, the trapped atoms can be moved along shuttling paths by means of alternating and direct current voltages, which can be separately coupled to specific electrodes 32 of the structured metal layer 30. For example, the electrodes 32 can include RF electrodes for RF trapping and DC electrodes for trapping in a static electric field and / or for moving the atoms (or ions) within the atom trap device 18. In another example, atoms can be trapped by the combination of an external magnetic field and electrostatic quadrupole fields generated by voltages applied to DC electrodes. The atom trap devices described herein can be designed to trap a plurality of atoms, which can be individually addressed and moved by appropriately controlling the electrical potentials of the electrodes 32.In a specific, but not limiting, example, the atom trap devices described herein may correspond to or include a surface ion trap (or a surface electrode ion trap).

[0026] It is understood that the atom trap device may contain 18 additional elements or additional material layers, which may be arranged between the top surface of the substrate 26 and the structured metal layer 30 and are not shown here for the sake of simplicity. For example, it may include an electrical redistribution layer that enables the formation of complex electrode structures and insulated electrodes in the structured electrode layer 30. Such an electrical redistribution layer may also be configured to electrically connect the electrodes 32 to an external circuit, such as a controller or a control chip.Alternatively or additionally, current-carrying wires can be provided which are arranged in one or more metal layers below the structured electrode layer 30, wherein the wires can be designed to generate a magnetic field gradient when conducting electric current in a capture zone above the electrodes 32.

[0027] The light source 14 can be any suitable component containing a plurality of waveguides and compatible with the first interface 2. In the illustrated example, the light source 14 can comprise or correspond to a fiber array (or optical fiber array) with a plurality of fibers (or optical fibers or fiber cores or optical fiber cores) 34. In particular, the fibers 34 can correspond to the waveguides 16 from previous examples. The light source 14 can contain a glass material 36, such as a glass wafer, a glass block, a glass plug, or the like, wherein the fibers 34 can be embedded in the glass material 36. A dimension of the glass material 36 in the vertical direction can, for example, be in a range of about 0.5 mm to about 5 mm.In a specific, but not limiting, example, the fiber array may include or conform to a V-groove arrangement, which may contain a plurality of V-shaped grooves or channels. These grooves or channels may be incorporated into the glass material 36. The grooves or channels may be designed and configured to hold and align multiple optical fibers in a fixed position. In the illustrated example, the light source 14 may be attached (e.g., glued) to a side face of the photonic device 100 and spaced apart from the support substrate 24. In this way, the mechanical stress at a mechanical interface between the photonic device 100 and the light source 14 may be reduced or avoided.When measured vertically, the dimension of a gap 38 between the top surface of the support substrate 24 and the bottom surface of the glass material 36 can range from approximately 10 µm to approximately 500 µm. In other examples, the light source 14 is not necessarily separate from the support substrate 24, but can be mechanically connected to the top surface of the support substrate 24.

[0028] The photonic device 100 can include a substrate 40, which can contain or consist of at least one of silicon, silicon carbide, quartz glass, sapphire, glass, aluminum nitride, or diamond. The substrate 40 of the photonic device 100 and the substrate 26 of the atom trap device 18 can be made of the same material or of different materials. The photonic device 100 can further include a dielectric material 42 arranged above the top of the substrate 40 and a plurality of waveguides 4 and / or 8 embedded in the dielectric material 42. The waveguides 4 and / or 8 can correspond to the waveguides 4 and / or 8 that are used in conjunction with the Fig. 1 and Fig. 2 are described. The dielectric material 42 can be configured as a surrounding medium or cladding material for the waveguides 4 and / or 8. For example, the dielectric material 42 can contain or be equivalent to an oxide, while the waveguides 4 and / or 8 can contain or be composed of materials as described in conjunction with the previous examples. In the specific cross-sectional side view of Fig. For the sake of simplicity, only one waveguide 4 and / or 8 is shown in Figure 3. However, it is understood that the photonic device 100 can contain multiple waveguides 4 and / or 8, as in the examples of the Fig. 1 and Fig. 2 shown. Furthermore, it should be noted that in the cross-sectional side view of Fig. 3 For the sake of simplicity, no active photonic component of the photonic device 100 is illustrated. However, it is understood that the photonic device 100 may contain one or more such active photonic components designed to perform operations as described in connection with the previous examples.

[0029] In the illustrated example, the thickness of the dielectric material 42, measured vertically, can increase towards the light source 14. This increases the area of ​​the right-hand side of the photonic device 100, thus enabling a stable mechanical connection between the photonic device 100 and the light source 14. Furthermore, the photonic device 100 can include a material block 46, which may be arranged on top of the dielectric material 42. For example, the material block 46 can contain or consist of a glass material, such as a glass wafer, a glass block, a glass stopper, or the like. In a specific, but not limiting, example, the material block 46 can be a wafer-bound glass block.The material block 46 can form part of the side surface of the photonic device 100, the side surface being designed to be mechanically connected to the light source 14. The material block 46 can provide mechanical stability and facilitate a mechanical connection between the photonic device 100 and the light source 14.

[0030] The photonic device 100 can include spot-size converters (SSCs) 44, which can form part of the first interface 2 between the photonic device 100 and the light source 14. The SSC 44 can be configured to switch or change between different modes of the waveguides 4 of the photonic device 100 and the fibers 34 of the light source 14. An SSC 44 can be configured to convert the beam size (or spot size) of the light emitted by a fiber 34 of the light source 14 to match the spot size of a waveguide 4 of the photonic device 100, and vice versa. Such conversion can couple the signal and minimize losses during light transmission. In the illustrated example, the SSC 44 can be at least partially embedded in the dielectric material 42. The SSC 44 can be in contact with corresponding waveguides 4 of the photonic device 100.

[0031] The photonic device 100 can be attached (e.g., glued) to a side surface of the atom trap device 18 and spaced apart from the support substrate 24. In this way, the mechanical stress at a mechanical interface between the photonic device 100 and the atom trap device 18 can be reduced or avoided. Measured vertically, the dimension of a gap 48 between the top surface of the support substrate 24 and the bottom surface of the substrate 40 can be in a range of approximately 10 µm to approximately 500 µm. In other examples, the photonic device 100 is not necessarily separated from the support substrate 24 but can be mechanically connected to the top surface of the support substrate 24. It should be noted that the dimensions of the photonic device 100 are determined by the previously specified dimensions of the light source 14 and the atom trap device 18, as well as those specified in [reference missing]. Fig. The 3 relative arrangements shown can result.

[0032] During operation of the system 300, electromagnetic waves from the fibers 34 of the light source 14 can be coupled via the SSC 44 at the first interface 2 into the waveguides 4 of the photonic device 100. In this respect, the fibers 34 can be appropriately aligned with the SSC 44. The electromagnetic waves can be transported via the waveguides 4 and 8 to the second interface 6. Here, the electromagnetic waves can be processed by one or more active photonic components of the photonic device 100, as described in conjunction with the previous examples. The electromagnetic waves can be coupled at the second interface 6 into the waveguides 20 of the atom trap device 18. In this respect, the waveguides 8 of the photonic device 100 can be aligned with the waveguides 20 of the atom trap device 18.The electromagnetic waves can then be transported via the waveguides 20 to a capture zone of the atom trap device 18. For example, the electromagnetic waves can be coupled out into the capture zone by means of a grid structure, so that atoms trapped in the capture zone can be manipulated by the electromagnetic waves.

[0033] With reference to Fig. Figure 4 shows a diagram of a system 400 according to the disclosure. The system 400 may include some or all of the features of the systems described above. In particular, the system 400 may include a light source 14, an atom trap device 18, and a first photonic device 100A, which may be similar to the corresponding components of the previous examples. The system 400 may further include at least one second photonic device 100B, which is arranged between the first photonic device 100A and the atom trap device 18. The second photonic device 100B may be at least partially similar to the photonic device 100A and may contain similar components. The system 400 may thus include a plurality of photonic devices, which may be connected sequentially, serially, or in a mixed configuration. One or more of these photonic components may include active photonic components.The numerous photonic components can be stacked on top of each other, arranged side by side, or both. Each of the photonic components 100A, 100B can be connected to other components (e.g., another photonic component, a control chip, etc.) via electrical contacts 12A, 12B, which can be arranged around the circumference of the respective component.

[0034] System 400 can include one or more alignment loops. In the illustrated example, System 400 can include an exemplary and non-limiting number of three alignment loops 50A to 50C. An alignment loop can be formed by one or more waveguides, which may be contained in at least two adjacent components of System 400. For example, alignment loop 50A can include waveguides contained in the first and second photonic devices 100A and 100B. The alignment loops can be used to properly align the photonic devices 100A and 100B with each other. When the photonic devices 100A and 100B are properly aligned, an optical or electrical signal fed into alignment loop 50A via a first fiber 16A can travel the entire length of alignment loop 50A and reach a second fiber 16B of the light source 14.If no signal is received on the second fiber 16B, the photonic devices 100A and 100B are not correctly aligned. In the illustrated example, two alignment loops 50A and 50C can be used to align the photonic devices 100A and 100B. Additionally, a third alignment loop 50B can be used to correctly align the atom trap device 18 with the photonic devices 100A and 100B. It is understood that similar alignment loops may be included in previously described devices and systems.

[0035] With reference to Fig. Figure 5 shows a diagram of a system 500 according to the disclosure. The system 500 may include some or all of the features of the systems described above. In the illustrated example, the system 500 may include three light sources 14A to 14C, three photonic components 100A to 100C, and an atom trap device 18. The aforementioned components may be connected via various interfaces, as shown in Fig. The photonic devices are specified in section 5, arranged, and coupled. In the illustrated case, several photonic devices can be coupled to the atom trap device 18. More precisely, the first photonic device 100A can be coupled to a first side face of the atom trap device 18, while the second photonic device 100B can be coupled to a second side face of the atom trap device 18. By using several photonic devices, bending or distortion of the individual devices can be avoided or reduced, and / or the modularity of the arrangement can be increased. Similarly, several elements can be coupled to the second photonic device 100B.More precisely, the second light source 14B can be coupled to a first side face of the second photonic device 100B, the third photonic device 100C can be coupled to a second side face of the second photonic device 100B, and the atom trap device 18 can be coupled to a third side face of the second photonic device 100B. In some examples, components of the system 500 (such as the photonic components 100B and 100C) can be coupled by means of photonic wire connections.

[0036] In the case shown, the third photonic device 100C can optionally include at least one metal cover 52, which can be arranged (partially or completely) over the first waveguides 4C and / or the second waveguides 8C of the third photonic device 100C. For illustration, the metal cover 52 is shown transparent so as not to obscure the waveguides 4C, 8C, and the active photonic component 10C of the third photonic device 100C. In practice, the metal cover can be opaque. The metal cover 52 can be configured to electromagnetically and / or optically shield at least one of the first waveguide 4C, the second waveguide 8C, or the active photonic component 10C. More specifically, the metal cover 52 can be configured to shield against stray light, RF fields, surface charges, or the like.In this respect, the influence of stray charges on atoms or ions trapped in the atom trap device 18 can be avoided or reduced. It is understood that the other photonic components 100A and 100B may also contain at least one metal cover. Furthermore, the system 500 may optionally include one or more photonic components 54, such as a light source, photodiodes, single-photon avalanche diodes (SPADs), a laser source, or the like. The photonic component(s) 54 may be mounted on one or more of the photonic devices 100A to 100C.

[0037] With reference to Fig. Figure 6 illustrates an exemplary connection between an atom trap device 18 and a photonic device 100 according to the disclosure. That is, it illustrates an example of the second interface 6 from the previous examples. In the case shown, the photonic device 100 can be stacked on top of the atom trap device 18. The second interface of the photonic device 100 can include a first lattice structure 56A designed to be coupled to a second lattice structure 56B of the atom trap device 18. The lattice structures 56A and 56B can be arranged at the ends of waveguides (not shown) of the photonic device 100 and the atom trap device 18, respectively. The lattice structures 56A and 56B can be oriented relative to each other such that they overlap at least partially in the vertical direction.

[0038] With reference to Fig. Figure 7 illustrates an exemplary connection between an atom trap device 18 and a photonic device 100 according to the disclosure. That is, it illustrates an example of the second interface 6 from the previous examples. In the case shown, the photonic device 100 can be stacked on top of the atom trap device 18. The second interface of the photonic device 100 can include a first taper structure 58A designed to be coupled to a second taper structure 58B of the atom trap device 18. The taper structures 58A and 58B can be arranged at the ends of waveguides (not shown) of the photonic device 100 and the atom trap device 18, respectively. The taper structures 58A and 58B can be oriented relative to each other such that they overlap at least partially when viewed in the vertical direction.

[0039] With reference to Fig. Figure 8 illustrates an exemplary connection between an atom trap device 18 and a photonic device 100 according to the disclosure. That is, it illustrates an example of the second interface 6 from the previous examples. In the case shown, the atom trap device 18 can be arranged laterally adjacent to the photonic device 100. The second interface of the photonic device 100 can include a first taper structure 58A designed to be coupled to a second taper structure 58B of the atom trap device 18. The taper structures 58A and 58B can be arranged at the ends of waveguides (not illustrated) of the photonic device 100 and the atom trap device 18, respectively. The taper structures 58A and 58B can be arranged at substantially the same height, such that they are at least partially aligned with each other.

[0040] With reference to Fig. Figure 9 shows an exemplary connection between a light source 14 and a photonic device 100 according to the disclosure. That is, it illustrates an example of the first interface 2 from the previous examples. In the case shown, the light source 14 can be arranged laterally next to the photonic device 100. The first interface of the photonic device 100 can include an SSC 44 designed to be coupled to waveguides of the light source 14. The SSC 44 can be oriented with respect to the waveguides of the light source 14 such that they are at least partially at the same level. The illustrated connection can be similar to the connection between the light source 14 and the photonic device 100 shown in the example of Figure 9. Fig. 3 is shown.

[0041] With reference to Fig. Figure 10 shows an exemplary connection between a light source 14 and a photonic device 100 according to the disclosure. That is, it shows an example of the first interface 2 from the previous examples. In the case shown, the light source 14 can be stacked on the photonic device 100. The first interface of the photonic device 100 can include a lattice structure 56 designed to be coupled to waveguides of the light source 14. The lattice structure 56 and the waveguides of the light source 14 can be aligned with each other such that they overlap, at least partially, when viewed in the vertical direction.

[0042] With reference to Fig. Figure 11 shows exemplary connections between a light source 14, an atom trap device 18, and a photonic device 100 according to the disclosure. In the illustrated example, the light source 14 and the atom trap device 18 can be stacked on top of the photonic device 100. The photonic device 100 can include a first lattice structure 56A and a second lattice structure 56C. In the illustrated example, both lattice structures 56A and 56B can be arranged on the top of the photonic device 100. The first lattice structure 56A can be configured to couple electromagnetic waves (e.g., laser light) received from the light source 14 into the photonic device 100. The second lattice structure 56B can be configured to couple electromagnetic waves processed by one or more active photonic components of the photonic device 100 into the atom trap device 18.The electromagnetic waves coupled out from the second lattice structure 56B can pass through the atom trap device 18 from its bottom to its top (see light field 64). The atom trap device 18 can contain a third lattice structure 56C designed to couple out electromagnetic waves received from the second lattice structure 56B. For example, the electromagnetic waves can be coupled out into a trap zone of the atom trap device 18.

[0043] With reference to Fig. Figure 12 shows exemplary connections between a light source 14, an atom trap device 18, and a photonic device 100 according to the disclosure. The system of Fig. 12 can have similar components to the system of Fig. 11, wherein the lattice structures 56A and 56B of the photonic device 100 can now point downwards. In the illustrated example, the second lattice structure 56B of the photonic device 100 can be arranged directly opposite the third lattice structure 56C of the atom trap device 18.

[0044] With reference to Fig. Figure 13 illustrates a connection between a waveguide 20 of an atom trap device 18 and a waveguide 8 of a photonic device 100 according to the disclosure. For simplicity, only a sheath on the undersides of the waveguides 8 and 20 is shown. A first mode converter 60A, coupled to one end of the waveguide 8, can be aligned with a second mode converter 60B, coupled to one end of the waveguide 20. The mode converters 60A and 60B can be configured to enable efficient transitions between different electromagnetic wave modes of the waveguides 8 and 20. The mode converters 60A and 60B can facilitate the conversion of electromagnetic waves from a mode of the waveguide 8 to a mode of the waveguide 20. In the example shown, the mode converters 60A and 60B can correspond to taper structures. That is, the arrangement of Fig. 13 can, for example, be the arrangement described above of Fig. 8. In the case shown, the taper structures can widen towards each other in one direction. In other cases, the mode converters 60A and 60B can correspond to inverse taper structures.

[0045] With reference to Fig. Figure 14 shows a connection between a waveguide 20 of an atom trap device 18 and a waveguide 8 of a photonic device 100 according to the disclosure. The illustrated arrangement can be used similarly to that shown in Fig. The mode converters 60A and 60B may differ in their implementation, although they may be 13. In the illustrated example, mode converters 60A and 60B can correspond to secondary waveguides that are larger than waveguides 8 and 20. In a non-restrictive example, the lateral dimension of a mode converter 60A or 60B may range from approximately 500 µm to approximately 1000 µm, and the vertical dimension may be approximately 1 µm.

[0046] With reference to Fig. Figure 15 shows a connection between a photonic component 62 and a photonic device 100 according to the disclosure. For example, the photonic component 62 may contain or correspond to a surface emitter (VCSEL, Vertical Cavity Surface Emitting Laser), a SPAD, a photodiode, or the like. Returning to the example in Fig. The photonic component 62 can be part of or correspond to the photonic component 54. The photonic component 62 can be configured to generate or detect a light field 64, which, depending on the specific case, may be convergent, divergent, collimated, or angled. In one example, the electromagnetic waves generated by the photonic component 62 can penetrate the oxide layer 42 and encounter a lattice structure 56, which may be formed at least partially in or on a waveguide 4 or 8 of the photonic device 100. The electromagnetic waves can be injected into the waveguide 4 or 8 via the lattice structure 56. In another example, the electromagnetic waves to be detected can propagate in the opposite direction to the photonic component 62.

[0047] With reference to Fig. Figure 16 shows a connection between a photonic component 62 and a photonic device 100 according to the disclosure. The arrangement shown can be at least partially similar to that in Fig. 15. In the case shown, for example, electromagnetic waves generated by the photonic component 62 can be fed into a waveguide 4 or 8 via a taper structure 58, for example by means of evanescent coupling.

[0048] The Fig. Figures 17A to 17C show cross-sectional side views of arrangements of waveguides 4 and / or 8 contained in a photonic device 100 according to the disclosure. Fig. In 17A, an exemplary number of two waveguides 4 and / or 8 can be embedded in a dielectric material 42, which can be formed, for example, by two stacked dielectric layers 42A and 42B. In particular, the waveguides 4 and / or 8 can be embedded in a dielectric material 42 that has a lower (effective) refractive index for transmitted wavelengths. A lateral distance d between the two waveguides 4 and / or 8 and / or a vertical height h of the two dielectric layers 42A, 42B can be chosen such that suitable electromagnetic and / or optical isolation between the waveguides 4 and / or 8 can be provided. In a non-restrictive example, the distance d can be less than about 10 µm and the height h can be about 4 µm. Fig. In 17B, the waveguides 4 and / or 8 can be separated from each other by at least one trench 66 formed in the dielectric material 42. The trench 66 can be configured to provide electromagnetic and / or optical isolation between the waveguides 4 and / or 8. Fig. 17C the surfaces of the trench 66 can be covered with a metal layer 68 which can be configured to further improve the electromagnetic and / or optical shielding between the adjacent waveguides 4 and / or 8.

[0049] The Fig. 18A and Fig. Figure 18B shows cross-sectional side views of arrangements of waveguides 4 and / or 8 contained in a photonic device 100 according to the disclosure. Fig. In 18A, a plurality of waveguides 4 and / or 8 can be embedded in a dielectric material 42, which can be formed, for example, by a stack of several dielectric layers 42A to 42D. A lateral spacing d between two adjacent waveguides 4 and / or 8 and / or a vertical height h of a dielectric layer can be chosen to provide suitable electromagnetic and / or optical isolation between the waveguides 4 and / or 8. In a non-restrictive example, the spacing d can be less than about 10 µm and the height h less than about 10 µm. Fig.18B can have at least one metal layer 68 arranged between the dielectric layers 42A to 42D. The metal layer 68 can be designed to electromagnetically and / or optically shield adjacent waveguides 4 and / or 8 that are embedded in different dielectric layers 42A to 42D. EXAMPLES

[0050] The examples described herein provide photonic devices and systems that contain photonic devices.

[0051] Example 1 is a photonic device comprising: a first interface designed to couple a plurality of first waveguides of the photonic device to a plurality of waveguides of a light source; and a second interface designed to couple a plurality of second waveguides of the photonic device to a plurality of waveguides of an atom trap device, wherein a number of the plurality of first waveguides is less than a number of the plurality of second waveguides and wherein a first pitch of the plurality of first waveguides is greater than a second pitch of the plurality of second waveguides.

[0052] Example 2 is a photonic device from Example 1, further comprising: at least one active photonic component, wherein the at least one active photonic component is designed to receive one or more electromagnetic waves from the plurality of waveguides of the light source via the plurality of first waveguides, to process the received electromagnetic waves based on at least one control signal, and to output the processed electromagnetic waves to the plurality of second waveguides.

[0053] Example 3 is a photonic device from Example 2, wherein the at least one active photonic component is designed to perform at least one of dividing, tuning, detecting, switching, modulating, amplifying, attenuating, phase-changing, combining, filtering, polarization-changing, generating a harmonic, generating a supercontinuum, frequency up- / frequency down-converting, or mixing the electromagnetic waves received from the light source.

[0054] Example 4 is a photonic device from one of the preceding examples, wherein the first pitch is greater than 100 µm and the second pitch is less than 10 µm.

[0055] Example 5 is a photonic device from one of the preceding examples, wherein the ratio of the number of first waveguide plurality to the number of second waveguide plurality is less than 1 / 10.

[0056] Example 6 is a photonic device from one of the preceding examples, wherein the first waveguides and / or the second waveguides are designed to transmit electromagnetic waves with a wavelength in the range of 350 nm to 1800 nm.

[0057] Example 7 is a photonic device from any of the preceding examples, wherein the first waveguides and / or the second waveguides comprise at least one of silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, lithium niobate, lithium tantalate, barium titanate, silicon, indium phosphate, or polymer materials.

[0058] Example 8 is a photonic device from one of the preceding examples, wherein the first waveguides and / or the second waveguides are embedded in a dielectric material and separated from each other by grooves formed in the dielectric material.

[0059] Example 9 is a photonic device from Example 8, wherein the surfaces of the trenches are covered with a metal layer designed to electromagnetically and / or optically shield adjacent waveguides.

[0060] Example 10 is a photonic device from one of the preceding examples, wherein the first waveguides and / or the second waveguides are embedded in a stack of several dielectric layers.

[0061] Example 11 is a photonic device from Example 10, wherein metal layers are arranged between the multiple dielectric layers and are designed to electromagnetically and / or optically shield adjacent waveguides embedded in different dielectric layers.

[0062] Example 12 is a photonic device from one of the preceding examples, wherein the first interface comprises at least one of a spot-size converter or a grid structure.

[0063] Example 13 is a photonic device from one of the preceding examples, wherein the first interface comprises spot-size converters designed to be coupled to waveguides of a light source located laterally next to the photonic device.

[0064] Example 14 is a photonic device from one of the preceding examples, wherein the first interface comprises a lattice structure designed to be coupled to waveguides of a light source stacked on the photonic device.

[0065] Example 15 is a photonic device from one of the preceding examples, wherein the second interface comprises at least one of a lattice structure or a taper structure.

[0066] Example 16 is a photonic device from one of the preceding examples, wherein the second interface comprises a first taper structure designed to be coupled to a second taper structure of an atom trap device located laterally next to the photonic device.

[0067] Example 17 is a photonic device from any of the preceding examples, wherein the second interface comprises at least one of a first lattice structure or a first taper structure designed to be coupled to at least one of a second lattice structure or a second taper structure of an atom trap device stacked on top of the photonic device.

[0068] Example 18 is a photonic device from any of the preceding examples, further comprising: a block of material forming a side surface of the photonic device, the side surface being designed to be mechanically connected to a light source arranged laterally next to the photonic device.

[0069] Example 19 is a photonic device from any of the preceding examples, further comprising: a metal cover arranged over the first waveguides and / or the second waveguides, wherein the metal cover is designed to electromagnetically and / or optically shield the first waveguides and / or the second waveguides.

[0070] Example 20 is a system comprising: a light source comprising a plurality of waveguides; an atom trap device comprising a plurality of waveguides; and a first photonic device comprising: a first interface designed to couple a plurality of first waveguides of the photonic device to the plurality of waveguides of the light source, and a second interface designed to couple a plurality of second waveguides of the photonic device to a plurality of waveguides of the atom trap device, wherein a number of the plurality of first waveguides is less than a number of the plurality of second waveguides and wherein a first pitch of the plurality of first waveguides is greater than a second pitch of the plurality of second waveguides.

[0071] Example 21 is a system from Example 20, wherein: the atom trap device is mounted on a support substrate and the first photonic device is attached to a side surface of the atom trap device and spaced apart from the support substrate.

[0072] Example 22 is a system of Example 20 or 21, further comprising: at least one second photonic device arranged between the first photonic device and the atom trap device.

[0073] Example 23 is a system of Example 20 or 21, further comprising: at least one second photonic device, wherein the first photonic device is coupled to a first side surface of the atom trap device and the second photonic device is coupled to a second side surface of the atom trap device.

[0074] Example 24 is a system consisting of one of Examples 20 to 23, further comprising: a photonic component mounted on the first photonic device.

[0075] As used in this description, the terms "essentially," "approximately," "about," or similar can mean "within reasonable manufacturing tolerances." For example, the terms "essentially," "approximately," "about," or similar can be used herein to account for small manufacturing tolerances or other factors (e.g., within 5%) that are considered acceptable in the industry without deviating from the aspects of the examples described herein. For example, a layer of material with an approximate thickness value may, in practice, have a thickness within 5% of the approximate thickness value.

[0076] As used herein, the terms “electrically connected” or “electrically coupled” or similar terms do not mean that the elements are in direct contact with each other; intermediate elements may be provided between the “electrically connected” or “electrically coupled” elements. However, according to the disclosure, the above terms and similar terms may optionally also have the specific meaning that the elements are in direct contact with each other, i.e., that no intermediate elements are provided between the “electrically connected” or “electrically coupled” elements.

[0077] The terms "above," "above," "below," or similar terms relating to a part, element, or layer of material formed or located "above," "above," or "below" a surface may be used herein to mean that the part, element, or layer of material (e.g., placed, formed, located, deposited, etc.) is "directly above," "directly above," or "directly below," e.g., in direct contact with the implied surface. However, the terms "above," "above," "below," or similar terms used relating to a part, element, or layer of material formed or located "above," "above," or "below" a surface may also be used herein to express that the part, element, or layer of material is intended to be located (e.g., placed, formed, located, deposited, etc.)."Indirectly above", "indirectly above" or "indirectly below" the implied surface, wherein one or more additional parts, elements or layers are arranged between the implied surface and the part, element or layer of material.

[0078] Although specific examples have been illustrated and described here, it will be clear to those skilled in the art that a multitude of alternative and / or equivalent embodiments may be used in place of the specific examples shown and described without departing from the scope of the present invention. This application is intended to cover all adaptations or variations of the specific examples discussed herein. Therefore, this invention is intended to be limited only by the claims and their equivalents.

[0079] It should be noted that the methods and devices described in this document, including their preferred embodiments, can be used alone or in combination with the other methods and devices disclosed in this document. Furthermore, the features described in connection with a device are also applicable to a corresponding method, and vice versa. In addition, all aspects of the methods and devices described in this document can be combined as desired. In particular, the features of the claims can be combined with one another as desired.

[0080] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and systems. Those skilled in the art will be able to implement various arrangements which, although not explicitly described or shown herein, embody the principles of the invention and are contained within its spirit and scope. Furthermore, all examples and embodiments described in this document are provided for illustrative purposes only, to facilitate the reader's understanding of the principles of the proposed methods and systems. Moreover, all statements contained herein that provide principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include their equivalents.

Claims

Photonic device (100) comprising: a first interface (2) configured to couple a plurality of first waveguides (4) of the photonic device (100) to a plurality of waveguides (16) of a light source (14); and a second interface (6) configured to couple a plurality of second waveguides (8) of the photonic device (100) to a plurality of waveguides (20) of an atom trap device (18), wherein a number of the plurality of first waveguides (4) is less than a number of the plurality of second waveguides (8), and wherein a first pitch (p1) of the plurality of first waveguides (4) is greater than a second pitch (p2) of the plurality of second waveguides (8). Photonic device (100) according to claim 1, further comprising: at least one active photonic component (10), wherein the at least one active photonic component (10) is designed to: receive one or more electromagnetic waves from the plurality of waveguides (16) of the light source (14) via the plurality of first waveguides (4), process the received electromagnetic waves based on at least one control signal and output the processed electromagnetic waves to the plurality of second waveguides (8). Photonic device (100) according to claim 2, wherein the at least one active photonic component (10) is designed to perform at least one of dividing, tuning, detecting, switching, modulating, amplifying, attenuating, phase-changing, combining, filtering, polarization-changing, generating a harmonic, generating a supercontinuum, frequency up / down conversion, mixing of the electromagnetic waves received from the light source (14). Photonic device (100) according to one of the preceding claims, wherein the first pitch (p1) is greater than 100 µm and the second pitch (p2) is less than 10 µm. Photonic device (100) according to one of the preceding claims, wherein the ratio of the number of plurality of first waveguides (4) to the number of plurality of second waveguides (8) is less than 1 / 10. Photonic device (100) according to one of the preceding claims, wherein the first waveguides (4) and / or the second waveguides (8) are designed to transmit electromagnetic waves with a wavelength in a range of 350 nm to 1800 nm. Photonic device (100) according to one of the preceding claims, wherein the first waveguides (4) and / or the second waveguides (8) comprise at least one of silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, lithium niobate, lithium tantalate, barium titanate, silicon, indium phosphate, polymer materials. Photonic device (100) according to one of the preceding claims, wherein the first waveguides (4) and / or the second waveguides (8) are embedded in a dielectric material (42) and are separated from each other by grooves (66) formed in the dielectric material (42). Photonic device (100) according to claim 8, wherein surfaces of the trenches (66) are covered with a metal layer (68) designed to electromagnetically and / or optically shield adjacent waveguides. Photonic device (100) according to one of the preceding claims, wherein the first waveguides (4) and / or the second waveguides (8) are embedded in a stack of several dielectric layers (42). Photonic device (100) according to claim 10, wherein metal layers (68) are arranged between the multiple dielectric layers (42) and are designed to electromagnetically and / or optically shield adjacent waveguides embedded in different dielectric layers (42). Photonic device (100) according to one of the preceding claims, wherein the first interface (2) comprises at least one of spot size converters (44) or a grid structure (56). Photonic device (100) according to one of the preceding claims, wherein the first interface (2) comprises spot size converters (44) designed to be coupled to waveguides (16) of a light source (14) arranged laterally next to the photonic device (100). Photonic device (100) according to one of the preceding claims, wherein the first interface (2) comprises a grid structure (56) designed to be coupled to waveguides (14) of a light source (14) stacked on the photonic device (100). Photonic device (100) according to one of the preceding claims, wherein the second interface (6) comprises at least one of a lattice structure (56) or a taper structure (58). Photonic device (100) according to one of the preceding claims, wherein the second interface (6) comprises a first taper structure (58A) designed to be coupled to a second taper structure (58B) of an atom trap device (18) arranged laterally next to the photonic device (100). Photonic device (100) according to one of the preceding claims, wherein the second interface (6) comprises at least one of a first lattice structure (56A) or a first taper structure (58A) designed to be coupled to at least one of a second lattice structure (56B) or a second taper structure (58B) of an atom trap device (18) stacked on the photonic device (100). Photonic device (100) according to one of the preceding claims, further comprising: a material block (46) forming a side surface of the photonic device (100), wherein the side surface is designed to be mechanically connected to a light source (14) arranged laterally next to the photonic device (100). Photonic device (100) according to one of the preceding claims, further comprising: a metal cover (52) arranged over the first waveguides (4) and / or the second waveguides (8), wherein the metal cover (52) is designed to shield the first waveguides (4) and / or the second waveguides (8) electromagnetically and / or optically. System comprising: a light source (14) comprising a plurality of waveguides (16); an atom trap device (18) comprising a plurality of waveguides (20); and a first photonic device (100) comprising: a first interface (2) configured to couple a plurality of first waveguides (4) of the photonic device (100) to the plurality of waveguides (16) of the light source (14), and a second interface (6) configured to couple a plurality of second waveguides (8) of the photonic device (100) to the plurality of waveguides (20) of the atom trap device (18), wherein a number of the plurality of first waveguides (4) is less than a number of the plurality of second waveguides (8), and wherein a first pitch (p1) of the plurality of first waveguides (4) is greater than a second pitch (p2) of the plurality of second waveguides (8). System according to claim 20, wherein: the atom trap device (18) is mounted on a support substrate (24), and the first photonic device (100) is attached to a side surface of the atom trap device (18) and is spaced apart from the support substrate (24). System according to claim 20 or 21, further comprising: at least a second photonic device (100B) arranged between the first photonic device (100A) and the atom trap device (18). System according to claim 20 or 21, further comprising: at least a second photonic device (100B), wherein the first photonic device (100A) is coupled to a first side surface of the atom trap device (18) and the second photonic device (100B) is coupled to a second side surface of the atom trap device (18). System according to one of claims 20 to 23, further comprising: a photonic component (62) mounted on the first photonic device (100).

Images