semiconductor device

The semiconductor device controls SiC MOSFET on/off transitions in parallel circuits by managing gate voltages and timings through a controlled circuit configuration, addressing complexity and breakdown issues while maintaining efficiency.

DE102024136803A1Pending Publication Date: 2025-07-31MITSUBISHI ELECTRIC CORP
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Patent Information

Application Number
DE102024136803
Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-01-26
Filing Date
2024-12-10
Publication Date
2025-07-31

AI Technical Summary

Technical Problem

The challenge lies in controlling the on/off state transitions of silicon carbide (SiC) MOSFETs in parallel circuits without increasing circuit complexity, while maintaining efficient operation and preventing breakdown due to reduced current capacity with smaller element sizes.

Method used

A semiconductor device configuration that includes a Si IGBT and SiC MOSFET in parallel, with a source MOSFET, drain MOSFET, and source-drain connection MOSFET, controlled by a circuit to manage on/off transitions in a predetermined order, using additional MOSFETs and power supply circuits to maintain gate voltage and synchronize operations.

Benefits of technology

This configuration allows for simple control of on/off states, prevents semiconductor destruction, and maintains efficient DC characteristics by ensuring appropriate timing and voltage levels, reducing circuit complexity and enhancing operational reliability.

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Abstract

A semiconductor device comprises: a second semiconductor element connected in parallel to a first semiconductor element; a source semiconductor element; a drain semiconductor element; a gate terminal of the first semiconductor element; a source-drain junction semiconductor element connected to a gate terminal of the second semiconductor element; and a control circuit for controlling an on / off state transition of the source semiconductor element, the drain semiconductor element, and the source-drain junction semiconductor element to bring the first semiconductor element and the second semiconductor element into an on state in this order and bring the second semiconductor element and the first semiconductor element into an off state in this order.
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Citation Information

Patent Citations

  • 6919292