Method for producing an edge covering layer and device

Abstract

Method (100) for producing an edge covering layer that is arranged in regions on a substrate that has a silicon layer with a Si(111) surface and a substrate core, wherein the substrate core is surrounded by at least one enveloping layer, comprising the steps of producing (110) an amorphous covering layer that envelops the substrate, wherein a surface of the covering layer suppresses crystalline growth of epitaxial AlxGa1-xN layers with long-range order and the covering layer represents a diffusion barrier for gallium in high-temperature processes, applying (120) a photoresist to the covering layer, producing (130) an etching mask by exposing the photoresist, and producing (140) an edge covering layer of the silicon layer by etching the covering layer in regions, in particular wet-chemically, wherein at least one lateral surface of the silicon layer is covered by the edge covering layer.

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