Semiconductor device with a first area and a second area

Abstract

Semiconductor device (100), wherein the semiconductor device (100) has a first region (100.1) and a second region (100.2), wherein the first region (100.1) comprises at least: - a substrate (102), wherein the substrate (102) has a source (104) and a drain (106), - an insulating material (110), - a transition region (118) within the substrate (102) that regulates the current flow between source (104) and drain (106) and defines a channel (114), - a conductive region (116), - a gate (112), wherein the second region (100.2) comprises a substrate (102) with the semiconductor material, the substrate (102) the drain (106) and a metal pad (120) the conductive region (116) and the transition region (118), the first area (100.1) and the second area (100.2) are connected to each other via the drain (106) and the conductive region (116).

Description

Technical field

[0001] The invention relates to a semiconductor device comprising a first region and a second region. The first region and the second region are interconnected via a drain, a conductive region, and a transition region, the second region comprising a drain, a metal pad, a conductive region, and the transition region. The invention further relates to a circuit unit. The invention also relates to a use of the semiconductor device and the circuit unit. State of the art

[0002] The integration of short-circuit monitoring systems into power electronic circuits is already well-established and widely used. A common method for short-circuit monitoring is the use of sense field-effect transistors (Sense FETs), which are specifically designed for current measurement and overcurrent protection. These Sense FETs are combined with external evaluation circuits to detect an overcurrent and initiate appropriate protective measures.

[0003] One of the well-known challenges of conventional short-circuit monitoring systems is that separate semiconductor components are required to implement the monitoring functions. For example, a standard B6 inverter requires at least six diodes per logic switch to implement the necessary circuitry. These additional semiconductor components not only increase costs but also require additional space on the circuit board. Especially in high-voltage systems, the space required for diodes and electrical connections increases due to the need to maintain minimum clearances for creepage and air gaps. A well-known method for detecting short circuits is desaturation monitoring, which uses a diode whose reverse voltage is at least equal to the reverse voltage of the power semiconductor being monitored.This diode is typically connected externally to the drain terminal of the circuit breaker. When the circuit breaker, i.e., a switching unit, is off, the diode blocks the overvoltage and thus protects the detection circuit from damage.

[0004] Although these methods are suitable for short-circuit monitoring, further improvements are needed regarding cost reduction, space savings, and integration techniques. The present invention aims to overcome these challenges by integrating a high-voltage diode directly into the circuit unit. This simplifies the circuit architecture while simultaneously achieving improved performance. Disclosure of the invention

[0005] According to the invention, a semiconductor device comprising a first region and a second region is presented. The first region comprises at least: - a substrate comprising semiconductor material, wherein the substrate has a source and a drain to enable a directed current flow between them through a channel, - an insulating material, - a transition region within the substrate that regulates the current flow between source and drain and defines the channel, - a conductive region located between the transition region and the drain, - a gate arranged in such a way as to generate an electric field and control the current flow in the channel, wherein the gate is at least partially surrounded by an insulating material.

[0006] The second region has a substrate containing the semiconductor material. This substrate includes the drain, a metal pad, a conductive region, and a transition region. The first and second regions are interconnected via the drain, conductive region, and transition region.

[0007] The present solution according to the invention presents an advantageous, space-saving solution for detecting short circuits in semiconductor devices, in which the internal parasitic body diode is used as part of a modern desaturation detection circuit comprising a circuit unit. This solution is characterized by the advantage that no external diode is required for the desaturation detection circuit, since the internal body diode of the semiconductor device is used. In this case, the internal parasitic body diode is formed by the second region of the semiconductor device.

[0008] A semiconductor device is an electronic component that can change its electrical conductivity depending on certain external influences such as voltage, current, or light. Semiconductor devices are generally made from materials such as silicon or germanium, which can both conduct electricity and, under certain conditions, insulate it.

[0009] A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is an example of a semiconductor device. These transistors are made from a semiconductor material such as silicon and have at least three terminals: a source, a drain, and a gate. The semiconductor device according to the invention has a first and a second region. The second region corresponds to an extension of the conventional semiconductor device, wherein a drain, a junction region, and a conductive region are extended in the X direction, and a metal pad is arranged on them such that there is no electrical contact between a source and / or the gate of the first region and the metal pad.

[0010] In an advantageous further development of the semiconductor device proposed according to the invention, the conductive region is designed either as a P-body or as an N-body.

[0011] In an advantageous further development of the semiconductor device proposed according to the invention, the second area is designed as an internal parasitic body diode for a desaturation detection unit.

[0012] In a further advantageous embodiment of the semiconductor device proposed according to the invention, the metal pad is designed in such a way that it serves to contact a desaturation detection unit.

[0013] Furthermore, according to the invention, a circuit unit for detecting desaturation is proposed. The circuit unit comprises: - a desaturation detection unit for monitoring desaturation, designed to detect desaturation between the source and the drain of a semiconductor device, - a control unit that communicates with the desaturation detection unit and is designed to take a protective measure to protect the semiconductor device based on the detected desaturation, - at least one semiconductor component, - an integrated circuit for controlling the gate of at least one semiconductor device, - a comparator for comparing a voltage across at least one semiconductor device with a predefined threshold for desaturation detection, - a power source to provide a constant current and - a resistor, wherein the resistor is arranged between the second region of the at least one semiconductor device and the integrated circuit.

[0014] A desaturation detection unit according to the invention is designed to monitor desaturation processes in semiconductor devices. Desaturation occurs between the source and the drain of the semiconductor device, such as a metal oxide semiconductor (MOSFET) or between the collector and the emitter of an insulated galvanic bipolar transistor (IGBT). The desaturation detection unit can detect the state of the semiconductor device and initiate various measures to protect the semiconductor device and any surrounding circuitry. For example, the desaturation detection unit can be operated with a threshold circuit that monitors voltages and currents and generates an alarm or a control signal upon detecting desaturation.

[0015] In an advantageous further development of the circuit unit proposed according to the invention, the resistor and the metal pad of the semiconductor component are connected.

[0016] In an advantageous further development of the circuit unit proposed according to the invention, the connection is a bond connection.

[0017] Furthermore, the invention relates to the use of the semiconductor component in the circuit unit for detecting and controlling desaturation during the operation of electronic circuits.

[0018] Furthermore, the invention relates to the use of a circuit unit in electronic circuits, in particular in power electronics and other high-performance applications. Advantages of the invention

[0019] The semiconductor device according to the invention, comprising a first and a second region, presents an advantageous space-saving concept for detecting short circuits in semiconductor devices, in which the internal parasitic body diode, which forms the second region of the semiconductor device, is used as part of the desaturation detection unit.

[0020] This has the advantage that, due to the use of the internal parasitic body diode of the second region of the semiconductor device, an external diode can be dispensed with for the desaturation detection unit.

[0021] The use of the internal diode results in a space saving, as the signal in the second region of the presented semiconductor device is at a potential that is comparatively less critical for the system than the gate and source potentials. Furthermore, reducing the number of high-voltage areas increases the system's robustness by reducing creepage distances.

[0022] The semiconductor device according to the invention advantageously enables a more compact circuit layout, which not only utilizes the available space more efficiently but also reduces the overall dimensions of the system. This optimizes the space requirement and allows for simpler integration into various applications.

[0023] Furthermore, the use of a more compact connection technology, which allows for a smaller distance between bond pads, press-fit pins, or conductor tracks on printed circuit boards or flexible films, significantly reduces the space required for connection elements. This leads to higher packing density and improves system performance.

[0024] It is particularly noteworthy that the semiconductor device according to the invention is also advantageously suited for the development of a more compact power module. This opens up new integration possibilities in a wide variety of applications while simultaneously offering a high-performance and space-saving design.

[0025] This enables reliable, instantaneous, robust, space-optimized desaturation detection for a wide range of power electronic products where a particularly stringent level of functional safety is required, such as drive inverters for electric vehicles. Brief description of the drawings

[0026] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0027] They show: Fig. 1 a schematic representation of a semiconductor device with a first region and a second region, Fig. 2 a schematic representation of a circuit unit and Fig. 3 A schematic representation of a metal oxide semiconductor field-effect transistor with the first region and the second region. Embodiments of the invention

[0028] In the following description of embodiments of the invention, identical or similar elements are designated by the same reference numerals, and repeated descriptions of these elements are omitted in individual cases. The figures represent the subject matter of the invention only schematically.

[0029] Fig. Figure 1 shows a schematic representation of a semiconductor device 100 with a first region 100.1 and a second region 100.2 and a P-body 122. The semiconductor device 100 has an exemplary embodiment of a trench transistor. A trench transistor is a special type of semiconductor device 100.

[0030] The first region 100.1 and the second region 100.2 of the semiconductor device 100 are built on a substrate 102, which serves as the basis for a structure of the semiconductor device 100. The substrate 102 can, for example, be made of a silicon-based material. According to the above, the following are built on the aforementioned substrate 102: Fig. One different component is arranged, which are described below. The semiconductor component 100 has in the first region 100.1 a source 104, a drain 106, a gate 112, the P-body 122, an insulating material 110, a conductive region 116, a channel 114 and a transition region 118.

[0031] From the Fig. Figure 1 shows that channel 114 extends between source 104 and drain 106. Furthermore, the Fig. Figure 1 shows that the semiconductor device 100 has a gate structure, wherein the gates 112 are separated from the doped areas by an electrically insulating material 110. Furthermore, the Fig. 1 shows that within the first area 100.1 of the semiconductor device 100 there is a parasitic body diode 128.

[0032] The second region 100.2 comprises the substrate 102 with the drain 106 and a metal pad 120, as well as the conductive region 116 and the transition region 118. The first region 100.1 and the second region 100.2 are connected to each other via the drain 106 and the conductive region 116. The metal pad 120 is positioned adjacent to the source 104 and spaced apart from it, so that there is no contact between the source 104 and the metal pad 120, nor between the P-body 122 of the first region 100.1 and the P-body 122 of the second region 100.2.

[0033] The second area 100.2 represents an advantageous extension of the semiconductor device 100, as it can be used as an internal parasitic body diode 124 for the desaturation detection unit 202. This eliminates the need for an additional external diode.

[0034] Fig. Figure 2 shows a circuit unit 200 for detecting desaturation.

[0035] Out of Fig. 2 it can be seen that this has a desaturation detection unit 202 for monitoring desaturation, which is designed to detect desaturation between source 104 and drain 106 of a semiconductor device 100.

[0036] Furthermore, the control unit comprises a semiconductor device 100 with an internal parasitic body diode 124 and a parasitic body diode 128, as well as an integrated circuit 206 for controlling the gate 112 of the semiconductor device 100. Furthermore, the Fig. 2 a comparator 208 for comparing a voltage at the semiconductor device 100 with a predetermined threshold for detecting desaturation, a current source 210 for providing a constant current, and a resistor 212, wherein the resistor 212 is arranged between the second area 100.2 of the semiconductor device 100 and the integrated circuit 206.

[0037] Fig. Figure 3 shows a schematic representation of a metal-oxide-semiconductor field-effect transistor (DMOS field-effect transistor) 300 with the first region 100.1 and the second region 100.2. The first region 100.1 and the second region 100.2 of the metal-oxide-semiconductor field-effect transistor 300 are built on a substrate 102, which serves as the basis for the structure of the metal-oxide-semiconductor field-effect transistor 300. The substrate 102 can, for example, be made of a silicon-based material. According to the above, the following are mounted on the aforementioned substrate 102: Fig. Three different components are arranged, which are described below. The metal-oxide-semiconductor field-effect transistor 300 has in the first region 100.1 a source 104, a drain 106, a gate 112, an insulating material 110, a conductive region 116, a channel 114, and a junction region 118. Furthermore, the metal-oxide-semiconductor field-effect transistor 300 has a P-body 122 (in Fig. (3 not shown). This is located in the area of ​​substrate 102, which lies below gate 112 and between source 104 and drain 106.

[0038] From the Fig. Figure 3 shows that channel 114 extends between source 104 and drain 106. Furthermore, the Fig. Figure 3 shows that the gate 112 of the metal-oxide-semiconductor field-effect transistor 300 is separated from the doped regions by an electrically insulating material 110. Furthermore, the Fig.3 shows that within the first area 100.1 of the metal-oxide-semiconductor field-effect transistor 300 there is a parasitic body diode 128.

[0039] The second region 100.2 comprises the substrate 102 with the drain 106 and a metal pad 120, as well as the conductive region 116 and the transition region 118. The first region 100.1 and the second region 100.2 are connected to each other via the drain 106, the insulating material 110, and the conductive region 116. The metal pad 120 is positioned adjacent to the source 104 of the first region 100.1 at a distance, so that there is no contact between the source 104 and the metal pad 120 of the second region 100.2.

[0040] The second area 100.2 represents an advantageous extension of the metal-oxide-semiconductor field-effect transistor 300, as it can be used as an internal parasitic body diode 124 for the desaturation detection unit 202. This eliminates the need for an additional external diode.

[0041] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, within the scope specified by the claims, a multitude of modifications are possible that fall within the bounds of what is considered skilled in the art.

Claims

[1] Semiconductor device (100) wherein the semiconductor device (100) has a first region (100.1) and a second region (100.2), wherein the first region (100.1) comprises at least: - a substrate (102) comprising semiconductor material, wherein the substrate (102) has a source (104) and a drain (106) to enable a directed current flow between them through a channel (114), - an insulating material (110), - a transition region (118) within the substrate (102) that regulates the current flow between source (104) and drain (106) and defines the channel (114), - a conductive region (116) located within the transition region (118) and the drain (106), - a gate (112), wherein the gate (112) is arranged such that it generates an electric field and controls the current flow in the channel (114), wherein the gate (112) is at least partially surrounded by an insulating material (110), wherein the second region (100.2) comprises a substrate (102) with the semiconductor material, the substrate (102) the drain (106) and a metal pad (120) the conductive region (116) and the transition region (118), wherein the first region (100.1) and the second region (100.2) are interconnected via the drain (106) and the conductive region (116). [2] Semiconductor device (100) according to claim 1, wherein the conductive region (116) is configured either as a P-body (122) or as an N-body. [3] Semiconductor device (100) according to claim 1 or 2, wherein the second region (100.2) is configured as an internal parasitic body diode (124) for a desaturation detection unit (202). [4] Semiconductor device (100) according to one of the preceding claims, wherein the metal pad (120) is designed such that it is provided for contacting the desaturation detection unit (202). [5] Circuit unit (200) for desaturation detection, comprising: - a desaturation detection unit (202) for monitoring desaturation, designed to detect desaturation between the source (104) and the drain (106) of a semiconductor device (100), - a control unit that communicates with the desaturation detection unit (202) and is designed to take a protective measure to protect the semiconductor device (100) based on the detected desaturation, - a semiconductor device (100) according to any one of the preceding claims, - an integrated circuit (206) for controlling the gate (112) of the semiconductor device (100), - a comparator (208) for comparing a voltage across the semiconductor device (100) with a predefined threshold for desaturation detection, - a power source (210) to provide a constant current and - a resistor (212), wherein the resistor (212) is arranged between the second region (100.2) of the semiconductor device (100) and the integrated circuit (206). [6] Circuit unit (200) according to claim 5, wherein the resistor (212) and the metal pad (120) of the semiconductor device (100) are connected. [7] Circuit unit (200) according to claim 6, wherein the connection is at least a bond connection. [8] Use of a semiconductor device (100) according to one of claims 1 to 4 in the circuit unit (200) for detecting and controlling desaturation during the operation of electronic circuits. [9] Use of a circuit unit (200) according to any one of claims 5 to 7 in electronic circuits, in particular in power electronics and other high-performance applications.

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