Power semiconductor device
DE102024207319B3Active Publication Date: 2025-11-27INFINEON TECH AUSTRIA AG
Patent Information
- Application Number
- DE102024207319
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-08-01
- Publication Date
- 2025-11-27
- Estimated Expiration
- 2044-08-01
Smart Images
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Abstract
A power semiconductor device comprising: a semiconductor substrate; a power transistor formed in a cell array of the semiconductor substrate; a reference terminal; a sensing terminal; and a depletion-mode sensing transistor integrated into the semiconductor substrate and having a voltage tap region of a first conductivity type. The voltage tap region is electrically connected to the sensing terminal and follows a drift zone potential of the power transistor until a normal-conducting channel of the depletion-mode sensing transistor pinches off. A pinch point of the normal-conducting channel of the depletion-mode sensing transistor is configured such that a voltage between the sensing terminal and the reference terminal is clamped below a maximum drain-to-collector voltage of the power semiconductor device.
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Citation Information
Patent Citations
Circuit arrangement with a load transistor and method for measuring a current through a load transistor
DE102013200335A1
Current Measurement in a Power Transistor
US20130181723A1