Electronic component having a measuring resistor between a first terminal and a second terminal

Abstract

An electronic component includes a plurality of power semiconductor chips, a first terminal, a second terminal separate from the first terminal, and a sense resistor. The power semiconductor chips are attached to a substrate. The sense resistor has a first side attached to the first terminal and a second side opposite the first side. The electronic component includes a first connection between a first contact pad of each of the power semiconductor chips and the second side of the sense resistor, and a second connection between the second terminal and the second side of the sense resistor. The sense resistor has a higher resistivity than the first connection. A resistance of the sense resistor varies by less than 10 percent over a normal operating temperature range of the electronic component.

Description

background

[0001] Demand for electronic components for power applications is rapidly increasing across a wide range of industries, including automotive, consumer electronics, renewable energy, manufacturing, and medical, among many others. Developments in semiconductor materials, such as silicon carbide (SiC), silicon (Si), and gallium nitride (GaN), have enabled power electronic components with advantageous features such as smaller footprints, higher voltage and current capabilities, and faster switching speeds.

[0002] Many applications for power electronic components require accurate and fast current measurements during operation. Power distribution applications, such as those for autonomous vehicles, may require accurate current sensing for safety features in applications such as power steering and electromechanical braking. These safety features may include detection of faults such as short circuits, devices that isolate an affected circuit area, and parallel devices that shunt current. Motor drives, such as brushless motor inverters, may also require current sensing capabilities.

[0003] Current sensing functions in such applications are typically implemented on the circuit board using separate components. These typically include either sense resistors or magnetic sensors (Hall or GMR / TMR), which are expensive and consume board space. Some power electronic components include an integrated current sensor, such as a magnetic sensor, but these typically require at least two additional pins for connection and may thus exceed the space constraints for some applications. Finally, current sense cells can be integrated into a chip, but such a solution typically involves a balance between control and accuracy, size, and cost.

[0004] Therefore, there is a need for a cost-effective solution that enables accurate current measurement in a power electronic component with a small footprint. Brief description

[0005] According to one embodiment of a molded electronic component, the molded electronic component comprises: a power semiconductor chip at least partially embedded in a molding compound; a load terminal partially embedded in the molding compound; a sense terminal separated from the load terminal and partially embedded in the molding compound; a sense resistor having a first side attached to the load terminal; a first connection between a first contact pad of the power semiconductor chip and a second side of the sense resistor opposite the first side; and a second connection between the sense terminal and the second side of the sense resistor, wherein the sense resistor has a higher resistivity than the first connection, and wherein a resistance of the sense resistor varies by less than 10 percent over a normal operating temperature range of the molded electronic component.

[0006] According to one embodiment of an electronic component, the electronic component comprises: a plurality of power semiconductor chips mounted on a substrate; a first terminal; a second terminal separated from the first terminal; a sense resistor having a first side attached to the first terminal and a second side opposite the first side; a first connection between a first contact pad of each of the power semiconductor chips and the second side of the sense resistor; and a second connection between the second terminal and the second side of the sense resistor, wherein the sense resistor has a higher resistivity than the first connection, and wherein a resistance of the sense resistor varies by less than 10 percent over a normal operating temperature range of the electronic component.

[0007] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description and upon viewing the accompanying drawings. Short description of the characters

[0008] The elements of the drawings are not necessarily to scale relative to one another. Like reference numerals designate corresponding similar parts. The features of the various illustrated embodiments may be combined, provided they are not mutually exclusive. Embodiments are illustrated in the drawings and described in detail in the following description. Fig. 1 illustrates a perspective view of a molded electronic component according to one embodiment. Fig. 2A and Fig. 2B illustrate perspective views of a shunt of a molded electronic component according to embodiments. Fig. 3 illustrates a perspective view of a molded electronic component according to one embodiment. Fig. 4 illustrates a perspective view of a molded electronic component according to one embodiment. Fig. 5A- Fig. 5C illustrate perspective views of a molded electronic component according to embodiments. Fig. 6A- Fig. 6B illustrate partial top views of an electronic component according to an embodiment. Detailed description

[0009] Described herein is a molded electronic component with an integrated current sensor, which is enabled by including a sense resistor between a load terminal and a sense terminal of the molded electronic component. Specifically, a first side of the sense resistor is attached to the load terminal, and a first connection (e.g., a clip, one or more bond wires, or metallic ribbons) connects a contact pad of a power semiconductor chip included in the molded electronic component to a second, opposite side of the sense resistor.The sense resistor has a higher resistivity (also referred to as electrical resistance) than the first connection, in some examples at least 10 times higher than a resistivity of the first connection, and thus a large part of the voltage drop between the contact pad of the power semiconductor chip and the load terminal occurs across the sense resistor. In addition, the resistance of the sense resistor exhibits little variation with temperature (e.g., less than 10 or even less than 5 percent over a normal operating temperature range of the molded electronic component). A potential at the second side of the sense resistor, to which the first connection is attached, can thus be similar (e.g.,less than 10 percent or even less than 5 percent variation) to the potential at the contact pad of the power semiconductor chip may be within the operating range of the molded electronic component, and measuring the potential at the second side of the sense resistor may provide a relatively accurate measurement of the current at the contact pad.

[0010] To enable such a measurement, the sense terminal of the molded electronic component is connected to the second side of the sense resistor with a second connection (e.g., a clip, one or more bond wires, or metallic strips). The potential of the second side of the sense resistor can be measured at the sense terminal and can thus provide a relatively accurate current measurement. Integrating a current sensor into the molded electronic component in this way can be simpler, cheaper, and / or require less space (e.g., by requiring only a single additional terminal) than other solutions for integrating a current sensor into a molded electronic component or an electrical circuit.

[0011] Next, with reference to the figures, exemplary embodiments of a molded electronic component with a shunt that enables a more accurate, space-efficient, and / or cost-effective implementation of an integrated current sensor are described.

[0012] Fig. 1 illustrates a perspective view of a molded electronic component 100 according to one embodiment. The molded electronic component 100 is shown as a surface-mount device (SMD), but may instead be a through-hole device or another type of molded electronic component. The molded electronic component 100 includes a power semiconductor chip 110. The power semiconductor chip 110 includes one or more devices, e.g., one or more transistors, diodes, resistors, capacitors, and / or other types of active or passive devices. In some examples, the power semiconductor chip 110 may be a power transistor chip, such as a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip.In other examples, the power semiconductor chip 110 may be a HEMT (high electron mobility transistor) chip, an IGBT (insulated gate bipolar transistor) chip, a JFET (junction field effect transistor) chip, etc. The semiconductor material of the power semiconductor chip 110 may be SiC, GaN, Si, etc. While a single power semiconductor chip 110 in the example of . Fig. 1, the molded electronic component 100 may include two or more power semiconductor chips 110.

[0013] In the example of Fig. 1, the power semiconductor chip 110 is a vertical power semiconductor chip (e.g., a vertical power transistor chip) with a first contact pad 111 and a second contact pad 112 on opposite sides of the power semiconductor chip 110. The second contact pad 112 of this example is attached to a lead frame 130 (e.g., a copper or aluminum lead frame). For a vertical power transistor chip, the primary current flow path is between the front and back sides of the power semiconductor chip 110 (along the z-direction in Fig. 1). However, this is only an example, and other types of devices and arrangements of the power semiconductor chip 110 are contemplated (e.g., a lateral or planar power MOSFET).

[0014] The molded electronic component 100 includes a load terminal 131 and a sense terminal 132. The load terminal 131 and the sense terminal 132 are physically separated from each other. The load terminal 131 and the sense terminal 132 may each be formed from a sheet, plate, or other body of a metal or metal alloy, e.g., copper, aluminum, etc. The load terminal 131 and the sense terminal 132 may, for example, be segments separated from the lead frame 130 during the manufacture of the molded electronic component 100. Alternatively, the lead frame 130, the load terminal 131, and / or the sense terminal 132 may be segments of a substrate, such as a printed circuit board (PCB), a DCB (Direct Copper Bonded) or AMB (Active Metal Brazed) substrate, an insulated metal substrate (IMS), etc.A third terminal 133, which is separate from the load terminal 131 and the sense terminal 132, is also shown in . Fig. 1, although this is not a requirement of the molded electronic component 100. The third terminal 133 may, for example, be a control terminal (e.g., a gate terminal) of a MOSFET of the power semiconductor chip 110. In this example, the third terminal 133 is electrically connected to the power semiconductor chip 110 by an elongated electrically conductive body 171 (e.g., a bond wire or a metallic ribbon). The molded electronic component 100 may include one or more additional terminals (not shown).

[0015] Each of the power semiconductor chip 110, the load terminal 131, the sense terminal 132, and in this example, the lead frame 130 and the third terminal 133, is at least partially embedded in a molding compound 120. A molding compound is a plastic encapsulant typically formed from an organic resin such as an epoxy resin. The plastic encapsulant may include fillers such as non-melting inorganic materials. Catalysts may be used to accelerate the curing reaction of the organic resin. Other materials such as flame retardants, adhesion promoters, ion traps, stress relievers, dyes, etc., may optionally be added to the plastic encapsulant. The molding compound may be formed by injection molding, compression molding, film-assisted molding (FAM), reaction injection molding (RIM), resin transfer molding (RTM), blow molding, etc.

[0016] In the example of the molded electronic component 100, the load terminal 131 provides electrical access to the first contact pad 111 of the power semiconductor chip 110. The first contact pad 111 and the load terminal 131 are electrically connected by a first connection 141 and a sense resistor 150. In particular, a first side 150 S1 of the measuring resistor 150 is attached to the load terminal 131. The first side 150 S1 The measuring resistor 150 can, for example, be soldered, diffusion-soldered, sintered, glued, or welded to the load terminal 131. The first connection 141 is located between the first contact pad 111 of the power semiconductor chip 110 and a second side 150. S2 of the measuring resistor 150 compared to the first side 150 S1 . The first connection 141 may in some examples be connected to the second side 150 S2of the measuring resistor 150 may be soldered, diffusion-soldered, sintered, glued, or welded. A second connection 142 of the molded electronic component 100 is located between the sensing terminal 132 and the second side 150. S2 of the measuring resistor 150.

[0017] The first connection 141 and the second connection 142 of the molded electronic component 100 are in Fig. 1 is implemented by a single metallic body 160. The metallic body 160 may, for example, be a metallic bracket (e.g., copper, aluminum), as in Fig. 1. The first connection 141 includes a horizontal segment 160 H of the metallic body 160, which is arranged above the power semiconductor chip 110 and is attached to the first contact pad 111 of the power semiconductor chip 110. In this example, a vertical bridging segment 160 connects Vof the metallic body 160 the horizontal segment 160 H with the second page 150 S2 of the measuring resistor 150. The vertical bridging segment 160v can, for example, be connected to the second side 150 S2 of the measuring resistor 150 can be soldered, diffusion-soldered, sintered, glued or welded. Examples in which the horizontal segment 160 H extends and directly with the second page 150 S2 of the measuring resistor 150 are considered. In some examples, the horizontal segment 160 H instead of the vertical bridging segment 160 V include a slight bend to compensate for a height difference between the first contact pad 111 and the measuring resistor 150. The second connection 142 includes a lateral bridging segment 160 L of the metallic body 160, which connects the measuring connection 132 with the second side 150 S2of the measuring resistor 150.

[0018] The sense resistor 150 includes a layer or layer stack 151 of a sense resistor material, e.g., a foil such as a rolled foil or a tape. In some examples, the sense resistor material is an alloy including copper and nickel. The sense resistor material may be, for example, a copper-nickel alloy or a copper-nickel-manganese alloy. The layer or layer stack 151 of the sense resistor material may have a thickness of about 20 micrometers up to 250 micrometers or more (e.g., from 20 to 100 micrometers for a molded low-voltage electronic component 100). In some examples, the layer or layer stack 151 of the sense resistor material has a thickness of up to 700 micrometers (e.g., for a molded high-voltage electronic component 100).The load terminal 131 and / or the first connection 141 may be attached directly to the layer or layer stack 151 of the sense resistor material or may be attached to another part of the sense resistor 150 (e.g., a current distributor, a solder mask, a corrosion protection).

[0019] According to one embodiment, the sense resistor 150 has a higher resistivity than the first connection 141. For example, the resistivity of the sense resistor 150 may be at least 8 times higher than the resistivity of the first connection 141. In some examples, the resistivity of the sense resistor 150 is at least 10 times higher than the resistivity of the first connection 141. A resistance of the sense resistor 150 varies by less than 10 percent over a normal operating temperature range of the molded electronic component 100. In some examples, a resistance of the sense resistor 150 varies by less than 5 percent over a normal operating temperature range of the molded electronic component 100, e.g., up to 2 percent. A normal operating temperature range of the molded electronic component 100 may, for example, be from about -40°C to about 175°C (e.g.,for automotive applications) or from about -25°C to about 150°C (e.g., for industrial applications). In some examples, up to 10 percent of the total product resistance of the molded electronic component 100 can be attributed to the sense resistor 150.

[0020] To ensure that the total module resistance does not exceed a target maximum value, the first connection 141 is made of a material with a relatively low resistivity, such as copper or aluminum. However, metals or metal alloys predominantly comprising copper or aluminum have a resistivity that is highly dependent on temperature. In the absence of the sense resistor 150, a voltage drop between the first contact pad 111 of the power semiconductor chip 110 and the load terminal 131 is completely distributed across the first connection 141 (in this example, the metallic body 160). In addition, the voltage drop is highly temperature-dependent without the sense resistor 150 being included in the path, which degrades the current sensing accuracy.

[0021] By including the sense resistor 150, which has a comparatively high resistivity relative to the first connection 141 and a low resistivity variability (e.g., less than 10 percent, less than 5 percent, or even up to 2 percent across the component temperature operating range), the majority of the voltage drop between the first contact pad 111 and the load terminal 131 occurs across the sense resistor 150 in the electrical path between the first contact pad 111 of the power semiconductor chip 110 and the load terminal 131. Thus, when the sense resistor 150 is provided and arranged as shown, the voltage drop across the sense resistor 150 is relatively temperature-independent (e.g., less than 10 percent, less than 5 percent, or even up to 2 percent variation across the component temperature operating range), ensuring accurate current sensing.

[0022] Connecting the detection terminal 132 to the second side 150 S2 of the measuring resistor 150 with the second connection 142 enables a measurement of the potential on the second side 150 S2of the sense resistor 150 at the sense terminal 132 with negligible current flow through the second connection 142, which can provide a relatively temperature-independent measurement at the sense terminal 132 of the potential and current at the first contact pad 111 of the power semiconductor chip 110. The small variation in the resistivity of the sense resistor 150 with temperature can ensure that the portion of the voltage drop between the first contact pad 111 of the power semiconductor chip 110 and the load terminal 131 that occurs across the sense resistor 150 remains relatively constant over the normal operating temperature range of the molded electronic component 100, potentially increasing the accuracy of current measurements made at the sense terminal 132.Integrating a current sensing function into the molded electronic component 100 in this manner may be more accurate, cheaper to implement, and / or may require less space than other solutions for measuring the current in a power semiconductor chip during operation of a conventional power electronic component.

[0023] In Fig. 1, the metallic body 160 contained in the molded electronic component 100 has a gap 160 g which has the lateral bridging segment 160 L of the metallic body 160 from the horizontal segment 160 H of the metallic body 160 over at least part of a length L of the lateral bridging segment 160 L separates. The gap 160 g can force a more directional current through the first connection 141 (e.g. in the x and z directions of Fig. 1), whereby the lateral current flow (e.g. in the y-direction of Fig. 1) near the sensing terminal 132. Reducing the lateral current flow near the sensing terminal 132 by including the gap 160 g in the metallic body 160 reduces the voltage drop at the sensing terminal 132, enabling more accurate current sensing. Examples in which the gap 160 g into the horizontal segment 160 H and / or the vertical bridging segment 160 V are contemplated, including examples where the gap 160 g only in the horizontal segment 160 H extends or only into the vertical bridging segment 160 V extends.

[0024] Fig. 2A and Fig. 2B illustrate perspective views of the shunt 150 included in the molded electronic component 100, according to embodiments.

[0025] In the example of Fig. 2A includes the first page 150 S1 and the second page 150 S2 of the shunt 150, each end layer or end layer stack 152 adjacent to the layer or layer stack 151 of the sense resistor material. Each end layer or end layer stack 152 includes a conductive material that is different from the sense resistor material. Example materials of each end layer or end layer stack 152 include, but are not limited to, Cu, Ag, Ni, Sn, and various alloys. Each end layer or end layer stack 152 may be a current distributor, a corrosion protector, and / or may serve another function, such as solder wetting. Each end layer or end layer stack 152 may cover all or only a portion of the first side 150. S1 or the second page 150 S2of the shunt 150. For example, a respective final layer or final layer stack 152 may include partial coverage (e.g., by plating) of a material (e.g., Ag) on ​​the shunt 150 to define solder regions. In some examples, the respective final layer or final layer stack 152 may further or alternatively include partial coverage of a solder stop or resist on the shunt 150 to define non-solder regions.

[0026] While the example of Fig. 2A a final layer or a final layer stack 152 both on the first side 150 S1 as well as the second page 150 S2 of the shunt 150, examples in which only the first side 150 S1 or the second page 150 S2a final layer or final layer stack 152 is contemplated. In some examples, the final layer or final layer stack 152 on the first side 150 includes S1 and the final layer or the final layer stack 152 on the second side 150 S2 the same material, have the same function, have the same or similar properties (e.g., thickness), etc. In some examples, the final layer or final layer stack 152 on the first side 150 includes S1 and the final layer or the final layer stack 152 on the second side 150 S2 different materials, have different functions, have different properties (e.g. thickness), etc.

[0027] The shunt 150 in the example of Fig. 2B includes an electrically insulating material 153 on sidewalls 150sw of the shunt 150. The electrically insulating material 153 may be an oxide or nitride, a polymer coating, or another electrically insulating material. While this example includes the electrically insulating material 153 on all sidewalls 150 SW of the shunt 150, examples in which the electrically insulating material 153 covers one or some of the side walls 150 SW covered, taken into consideration.

[0028] The second page 150 S2 of shunt 150 of Fig. 2B includes a solder stop 154 ​​containing the solder within a region defined by the solder stop 154, for example, a solder used to connect the first connection 141 and / or the second connection 142 to the second side 150 S2 in the example of Fig. 1. The solder stop 154 ​​of this example covers an outer periphery of the second side 150 S2 , although other arrangements are contemplated. In some examples, the solder stop 154 ​​may be consistent with the examples of the final layer or final layer stack 152 shown in Fig. 2A, for example, a partial coverage of the second side 152 S2 with a final layer or final layer stack 152 to define solderable areas and the solder stop 154 ​​to define non-solderable areas.

[0029] While the example of the shunt 150 of Fig. 2B both the electrically insulating material 153 on the side walls 150 SWWhile the shunt 150 includes both the electrically insulating material 153 and the solder stop 154, this is for illustrative purposes only. That is, these are independent and optional features, and some embodiments of the shunt 150 may include only one of the electrically insulating material 153 or the solder stop 154, or neither of the features.

[0030] Fig. Figure 3 illustrates a perspective view of the molded electronic component 100 according to one embodiment. In particular, Fig. 3 another example of the gap 160 g in the metallic body 160 in which the gap 160 g narrower in the x-direction and wider in the y-direction than the gap 160 g in the example of Fig. 1. In this example, the gap extends 160 g into the vertical bridging segment 160 V over the length L of the lateral bridging segment 160 L Other dimensions of the gap 160 gare taken into consideration.

[0031] Fig. Figure 4 illustrates a perspective view of the molded electronic component 100 according to one embodiment. In particular, Fig. 4 an example that has no gap 160 g in the metallic body 160. Instead, the lateral bridging segment 160 L of the metallic body 160 to the horizontal segment 160 H of the metallic body 160 over the length L of the lateral bridging segment 160 L to.

[0032] Fig. 5A- Fig. 5C illustrate perspective views of the molded electronic component 100 according to embodiments. In particular, Fig. 5A- Fig. 5C Examples of the molded electronic component 100 in which the first connection 141 and the second connection 142 are implemented by physically separate metallic conductors.

[0033] In the Fig. 5A, the first connection 141 is implemented by a metallic clamp 160. The metallic clamp 160 of Fig. 5A may be similar in material composition, structure, etc. to the metallic body 160 of the examples of Fig. 1, Fig. 3 and Fig. 4. The metallic bracket 160 includes a horizontal segment 160 H , which is arranged above the power semiconductor chip 110 and is attached to the first contact pad 111 of the power semiconductor chip 110, and a vertical bridging segment 160 V , which is the horizontal segment 160 H with the second page 150 S2 of the measuring resistor 150.

[0034] The second connection 142 from Fig. 5A is implemented by one or more elongated electrically conductive bodies 171 separated from the metallic clip 160. An elongated electrically conductive body 171 may be a bonding wire, a metallic ribbon, etc.

[0035] Fig. 5B illustrates an example in which the second connection 142 is implemented by a single metallic body 172 (e.g., a metallic bracket, as illustrated) that is separate from the metallic bracket 160.

[0036] Fig. 5C illustrates an example in which the first connection 141 is implemented by one or more electrically conductive bodies 171 (e.g., bonding wires and / or metallic strips). In this example, the second connection 142 is also implemented by one or more electrically conductive bodies 171, although examples in which the first connection 141 is implemented by one or more electrically conductive bodies 171 and the second connection 142 is implemented by a different type of connection (e.g., the single metallic body 172 of Fig. 5B) is implemented.

[0037] Fig. 6A and Fig. 6B illustrate partial top views of an electronic component 200 according to one embodiment. The electronic component 200 may be a molded electronic component, such as the molded electronic component 100, or may be another type of electronic component, such as one in which the components are enclosed in a frame or housing.

[0038] The electronic component 200 includes a plurality of power semiconductor chips 110. The power semiconductor chips 110 may be arranged to form all or part of the circuit, for example, a DC / AC inverter, a DC / DC converter, an AC / DC converter, a DC / AC converter, an AC / AC converter, a multi-phase inverter, an H-bridge, a half-bridge, a full-bridge, a motor driver, etc. For example, the power semiconductor chips 110 may be electrically coupled in parallel to form a switching device of a power electronic component.

[0039] The power semiconductor chips 110 are attached to a substrate 130. Examples of the substrate 130 include a DCB (Direct Copper Bonded) or AMB (Active Metal Brazed) substrate, a printed circuit board (PCB), a lead frame, an insulated metal substrate (IMS), etc. In this example, the power semiconductor chips are attached to a first metal structure 1301 of the substrate 130.

[0040] The electronic component 200 may include more than one substrate 130, with a plurality of power semiconductor chips 110 attached to each substrate 130. For example, in the case of a half-bridge configuration, the electronic component 200 may include two (2) separate substrates 130. A first plurality of power semiconductor chips 110 attached to a first of the substrates 130 may be electrically coupled in parallel to form a low-side switch of the half-bridge. A second plurality of power semiconductor chips 110 attached to a second of the substrates 130 may be electrically coupled in parallel to form a high-side switch of the half-bridge. Alternatively, the first plurality of power semiconductor chips 110 may be attached to a first metal structure of the substrate (e.g., the first metal structure 1301 in Fig. 6A and Fig. 6B) and the second plurality of power semiconductor chips 110 may be attached to a different metal structure of the substrate (e.g., as viewed in Fig. 6A and Fig. 6B). In this example, Fig. 6A and Fig. 6B shows the switch node output (“SW”) shared by the low-side switch and the high-side switch of the half-bridge, with the visible power semiconductor chips 110 in Fig. 6A and Fig. 6B in this example forms the high-side switch. Again, as explained above, other power converter circuit configurations can be implemented by the electronic component 200.

[0041] As in the molded electronic component 100, the first side 150 S1of the measuring resistor 150 of the electronic component 200 is attached to a first terminal 131. The first terminal 131 can be any load / current-carrying terminal, for example, a DC+ terminal, a DC terminal, an AC terminal (e.g., the switch node terminal "SW" of a half-bridge), etc. In this example, the first terminal 131 is implemented by a first metallic body 1311 and one or more second metallic bodies 1312 that connect the first metallic body 1311 to the first side 150 S1of the sense resistor 150. In some examples, the first metallic body 1311 and the one or more second metallic bodies 1312 are separate bodies that are arranged and attached to each other to form the first terminal 131. For example, the first metallic body 1311 may be a lead frame or other metallic structure, and the second metallic bodies 1312 may be elongated electrically conductive bodies, such as wires, straps, clips, etc., attached to the first metallic body 1311, e.g., by a solder, hard or welded joint, an adhesive bond, etc. In other examples, the first metallic body 1311 and the one or more second metallic bodies 1312 may be parts of a single metallic body (e.g., a lead frame).

[0042] The first connection 141 of the electronic component 200 is between the first contact pad 111 of each of the power semiconductor chips 110 and the second side 150 S2 of the measuring resistor 150. In the example of the electronic component 200 in Fig. 6A is the measuring resistor 150 and in particular the second side 150 S2 of the measuring resistor 150 is attached to a second metal structure 1302 of the substrate 130, which is separate from the first metal structure 1301 of the substrate 130. In this example, the first connection 141 is implemented by a portion of the second metal structure 1302 of the substrate 130 and one or more metallic bodies 160 (e.g., clips) that connect the first contact pad 111 of each of the power semiconductor chips 110 to the second metal structure 1302 of the substrate 130.

[0043] Fig. Figure 6B illustrates an alternative embodiment of the electronic component 200 in which the first side 150S1 of the measuring resistor 150 is attached to the second metal structure 1302 of the substrate 130. In the example of the electronic component 200 in Fig. 6B, the first terminal 131 is implemented by the first metallic body 1311, the second metallic structure 1302 of the substrate 130, and one or more second metallic bodies 1312 that connect the first metallic body 1311 to the second metallic structure 1302 of the substrate 130. The second metallic bodies 1312 may be attached to the second metallic structure 1302 of the substrate 130 by a solder, hard or welded connection, an adhesive connection, etc. The first connection 141 of the electronic component 200 in Fig. 6B is implemented by one or more metallic bodies 160 (e.g., clips) that connect the first contact pad 111 of each of the power semiconductor chips 110 to the second side 150 S2 of the measuring resistor 150.

[0044] The second connection 142 of the electronic component 200 is between a second terminal 132 and the second side 150 S2 of the measuring resistor 150. The second terminal 132 is separate from the first terminal 131 and can be a measuring terminal like the measuring terminal 132 of the molded electronic component 100. In the example of the electronic component 200 of Fig. 6A, the second connection 142 is implemented by a portion of the second metal structure 1302 of the substrate 130 and one or more elongated electrically conductive bodies 171 that connect the second terminal 132 to the second metal structure 1302 of the substrate 130. In the example of the electronic component 200 of Fig. 6B, the second connection 142 is implemented by one or more elongated electrically conductive bodies 171 that connect the second terminal 132 to the second side 150 S2 of the measuring resistor 150. While Fig. 6A and Fig. 6B illustrate the electrically conductive body 171 of the second interconnect 142 extending between second metallic bodies 1312 of the first terminal 131, the second interconnect 142 may additionally or alternatively include one or more electrically conductive bodies 171 arranged at other positions, e.g., on one or both sides of the array of second metallic bodies 1312. In some examples, the second terminal 132 and the one or more elongated electrically conductive bodies 171 of the second interconnect 142 are separate bodies attached to each other, e.g., by a solder, hard or welded joint, an adhesive joint, etc. In other examples, the second terminal 132 and the one or more elongated electrically conductive bodies 171 of the second interconnect 142 may be parts of a single metallic body (e.g., a lead frame).

[0045] The electronic component 200 may include a fourth terminal 134 separate from the first terminal 131 and the second terminal 132. The fourth terminal 134 may be a sensing terminal, such as the second terminal 132 of the electronic component 200 and the sensing terminal 132 of the molded electronic component 100. One or more elongated electrically conductive bodies 171 connect the fourth terminal 134 to the first side 150. S1 of the measuring resistor 150. In some examples, the fourth terminal 134 and the one or more elongated electrically conductive bodies 171 connected to the first side 150 S1of the measuring resistor 150 are separate bodies that are attached to each other, e.g., by a soldered, hard-welded or welded connection, an adhesive connection, etc. In other examples, the fourth terminal 134 and the one or more elongated electrically conductive bodies 171 that are connected to the first side 150 S1 of the measuring resistor 150 may be parts of a single metallic body (e.g., a lead frame). While Fig.6B illustrates the electrically conductive body 171 connecting the fourth terminal 134 to the second metal structure 1302 between second metallic bodies 1312 of the first terminal 131, the connection between the fourth terminal 134 and the second metallic structure 1302 may additionally or alternatively include one or more electrically conductive bodies 171 attached to the second metallic structure 1302 at other positions, e.g., on one or both sides of the array of second metallic bodies 1312.

[0046] Although the present disclosure is not so limited, the following numbered examples illustrate one or more aspects of the disclosure.

[0047] Example 1. A molded electronic component comprising: a power semiconductor chip at least partially embedded in a molding compound; a load terminal partially embedded in the molding compound; a sense terminal separate from the load terminal and partially embedded in the molding compound; a sense resistor having a first side attached to the load terminal; a first connection between a first contact pad of the power semiconductor chip and a second side of the sense resistor opposite the first side; and a second connection between the sense terminal and the second side of the sense resistor, the sense resistor having a higher resistivity than the first connection, wherein a resistance of the sense resistor varies by less than 10 percent over a normal operating temperature range of the molded electronic component.

[0048] Example 2. The molded electronic component of Example 1, wherein the sense resistor comprises a layer of a sense resistor material.

[0049] Example 3. The molded electronic component of Example 2, wherein the sense resistor material is an alloy comprising copper and nickel.

[0050] Example 4. The molded electronic component according to example 2 or 3, wherein the layer of the measuring resistor material has a thickness of up to 700 micrometers.

[0051] Example 5. The molded electronic component according to any one of examples 2 to 4, wherein the layer of the measuring resistor material is a foil.

[0052] Example 6. The molded electronic component of any one of Examples 2 to 5, wherein at least one of the load terminal or the first connection is attached directly to the layer of sense resistor material.

[0053] Example 7. The molded electronic component of any one of examples 2 to 6, wherein at least one of the first side of the sense resistor or the second side of the sense resistor comprises a layer adjacent to the layer of sense resistor material and comprising a conductive material different from the sense resistor material.

[0054] Example 8. The molded electronic component according to any one of examples 1 to 7, wherein the resistivity of the measuring resistor is at least 8 times higher than the resistivity of the first connection.

[0055] Example 9. The molded electronic component of any one of examples 1 to 8, wherein the first side of the sense resistor is soldered, diffusion soldered, sintered, glued, or welded to the load terminal.

[0056] Example 10. The molded electronic component of any one of examples 1 to 9, wherein the first connection is soldered, diffusion soldered, sintered, glued, or welded to the second side of the sense resistor.

[0057] Example 11. The molded electronic component of any one of examples 1 to 10, wherein the first connection and the second connection are implemented by a single metallic body, the first connection comprising a horizontal segment of the metallic body disposed over the power semiconductor chip and attached to the first contact pad of the power semiconductor chip, and a vertical bridging segment of the metallic body connecting the horizontal segment to the second side of the sense resistor, and the second connection comprising a lateral bridging segment of the metallic body connecting the sense terminal to the second side of the sense resistor.

[0058] Example 12. The molded electronic component of Example 11, wherein a gap in the metallic body separates the lateral bridging segment of the metallic body from the horizontal segment of the metallic body over at least a portion of a length of the lateral bridging segment.

[0059] Example 13. The molded electronic component of Example 11, wherein the lateral bridging segment of the metallic body is adjacent to the horizontal segment of the metallic body over a length of the lateral bridging segment.

[0060] Example 14. The molded electronic component of any one of examples 1 to 10, wherein the first interconnection and the second interconnection are implemented by physically separate metallic conductors.

[0061] Example 15. The molded electronic component of example 14, wherein the second connection is implemented by one or more bond wires and / or metallic ribbons or a single metallic body.

[0062] Example 16. The molded electronic component of example 14 or 15, wherein the first connection is implemented by a metallic clip comprising a horizontal segment disposed over the power semiconductor chip and attached to the first contact pad of the power semiconductor chip, and a vertical bridging segment connecting the horizontal segment to the second side of the sense resistor.

[0063] Example 17. The molded electronic component of example 14 or 15, wherein the first connection is implemented by one or more bond wires and / or metallic ribbons.

[0064] Example 18. The molded electronic component of any one of examples 1 to 17, wherein the shunt comprises an electrically insulating material on at least one sidewall of the shunt.

[0065] Example 19. The molded electronic component of any one of examples 1 to 18, wherein both the first connection and the second connection are soldered to the second side of the sense resistor, and wherein the second side of the sense resistor includes a solder stop containing the solder.

[0066] Example 20. The molded electronic component of any one of examples 1 to 19, wherein a second contact pad on an opposite side of the power semiconductor chip from the first contact pad is attached to a lead frame partially embedded in the molding compound.

[0067] Example 21. An electronic component comprising: a plurality of power semiconductor chips attached to a substrate; a first terminal; a second terminal separate from the first terminal; a sense resistor having a first side attached to the first terminal and a second side opposite the first side; a first connection between a first contact pad of each of the power semiconductor chips and the second side of the sense resistor; and a second connection between the second terminal and the second side of the sense resistor, wherein the sense resistor has a higher resistivity than the first connection, and wherein a resistance of the sense resistor varies by less than 10 percent over a normal operating temperature range of the electronic component.

[0068] Example 22. The electronic component of Example 21, wherein the power semiconductor chips are attached to a first metal structure of the substrate, wherein the second side of the sense resistor is attached to a second metal structure of the substrate, and wherein the first connection is implemented by a portion of the second metal structure of the substrate and one or more metallic bodies connecting the first contact pad of each of the power semiconductor chips to the second metal structure of the substrate.

[0069] Example 23. The electronic component of example 21 or 22, wherein the power semiconductor chips are attached to a first metal structure of the substrate, wherein the second side of the sense resistor is attached to a second metal structure of the substrate, and wherein the second connection is implemented by a part of the second metal structure of the substrate and one or more elongated electrically conductive bodies connecting the second terminal to the second metal structure of the substrate.

[0070] Example 24. The electronic component of any one of examples 21 to 23, wherein the first terminal is implemented by a first metallic body and one or more second metallic bodies connecting the first metallic body to the first side of the sense resistor.

[0071] Example 25. The electronic component of any one of examples 21 to 24, further comprising: a fourth terminal separate from the first terminal and the second terminal; and one or more elongated electrically conductive bodies connecting the fourth terminal to the first side of the sense resistor.

[0072] Example 26. The electronic component of any one of examples 21 to 25, wherein the power semiconductor chips are electrically coupled in parallel to form a switching device.

[0073] Example 27. The electronic component of example 26, wherein the switching device is a high-side switch of a half-bridge.

[0074] Terms such as "first," "second," and the like are used to describe various elements, regions, sections, etc., and are also not intended to be limiting. Like terms refer to like elements throughout the specification.

[0075] As used herein, the terms "having," "containing," "including," "comprising," and the like are open-ended terms that indicate the presence of specified elements or features but do not preclude additional elements or features. The articles "a," "an," and "the" are intended to include both the plural and singular unless the context clearly indicates otherwise.

[0076] The term "and / or" should be interpreted to include all possible conjunctive and disjunctive combinations, unless expressly stated otherwise. For example, the term "A and / or B" should be interpreted to mean only A, only B, or both A and B. The term "at least one of" should be interpreted in the same way as "and / or" unless expressly stated otherwise. For example, the term "at least one of A and B" should be interpreted to mean only A, only B, or both A and B.

[0077] It is understood that the features of the various embodiments described herein may be combined with one another unless expressly stated otherwise.

[0078] Although specific embodiments have been illustrated and described herein, it will be understood by one of ordinary skill in the art that a variety of alternative and / or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and their equivalents.

Claims

[1] A molded electronic component (100) comprising: a power semiconductor chip (110) which is at least partially embedded in a molding compound (120); a load terminal (131) partially embedded in the molding compound (120); a measuring terminal (132) which is separate from the load terminal (131) and is partially embedded in the molding compound (120); a measuring resistor (150) having a first side (150S) attached to the load terminal (131); a first connection (141) between a first contact pad (111) of the power semiconductor chip (110) and a second side (152S) of the measuring resistor (150) opposite the first side (150S); and a second connection (142) between the measuring terminal (132) and the second side (152S) of the measuring resistor (150), wherein the measuring resistor (150) has a higher specific resistance than the first connection (141), and wherein a resistance of the measuring resistor varies by less than 10 percent over a normal operating temperature range of the molded electronic component (100). [2] The molded electronic component (100) of claim 1, wherein the sensing resistor (150) comprises a layer of a sensing resistor material, in particular wherein the layer of the sensing resistor material has a thickness of up to 700 micrometers. [3] The molded electronic component (100) of claim 2, wherein the layer of the measuring resistor material is a foil and / or wherein the measuring resistor material is an alloy comprising copper and nickel. [4] A molded electronic component (100) according to any one of claims 2 or 3, wherein at least one of the load terminal (131) or the first connection (141) is attached directly to the layer of the measuring resistor material. [5] The molded electronic component (100) of any one of claims 2 to 4, wherein at least one of the first side (150S) of the sense resistor (150) or the second side (152S) of the sense resistor (150) comprises a layer adjacent to the layer of sense resistor material and comprising a conductive material different from the sense resistor material. [6] A molded electronic component (100) according to any one of the preceding claims, wherein the resistivity of the measuring resistor (150) is at least 8 times higher than the resistivity of the first connection (141). [7] Molded electronic component (100) according to one of the preceding claims, wherein the first side (150S) of the measuring resistor (150) is soldered, diffusion-soldered, sintered, glued or welded to the load terminal (131) and / or wherein the first connection (141) is soldered, diffusion-soldered, sintered, glued or welded to the second side (152S) of the measuring resistor (150). [8] Molded electronic component (100) according to one of the preceding claims, wherein the first connection (141) and the second connection (142) are implemented by a single metallic body (160, 172), wherein the first connection (141) comprises a horizontal segment (160H) of the metallic body (160) arranged above the power semiconductor chip (110) and attached to the first contact pad (111) of the power semiconductor chip (110), and a vertical bridging segment (160V) of the metallic body (160) connecting the horizontal segment (160H) to the second side (152S) of the measuring resistor (150), and wherein the second connection (142) comprises a lateral bridging segment (160L) of the metallic body (160) connecting the measuring terminal (132) to the second side (152S) of the measuring resistor (150). [9] The molded electronic component (100) of claim 8, wherein a gap (160g) in the metallic body (160) separates the lateral bridging segment (160L) of the metallic body (160) from the horizontal segment (160H) of the metallic body (160) over at least a portion of a length of the lateral bridging segment (160L). [10] The molded electronic component (100) of any one of claims 8 to 9, wherein the lateral bridging segment (160L) of the metallic body (160) is adjacent to the horizontal segment (160H) of the metallic body (160) over a length of the lateral bridging segment (160L). [11] A molded electronic component according to any one of the preceding claims, wherein the first connection (141) and the second connection (142) are implemented by physically separate metallic conductors. [12] The molded electronic component (100) of claim 11, wherein the second connection (142) is implemented by one or more bond wires and / or metallic ribbons or a single metallic body (160, 172). [13] The molded electronic component (100) of claim 11 or 12, wherein the first connection (141) is implemented by a metallic clip (160) comprising a horizontal segment (160H) disposed above the power semiconductor chip (110) and attached to the first contact pad (111) of the power semiconductor chip (110), and a vertical bridging segment (160V) connecting the horizontal segment (160H) to the second side (152S) of the sense resistor (150), or wherein the first connection is implemented by one or more bond wires and / or metallic ribbons. [14] The molded electronic component (100) of any preceding claim, wherein the sensing resistor (150) comprises an electrically insulating material on at least one sidewall of the sensing resistor (150). [15] The molded electronic component (100) of any preceding claim, wherein both the first connection (141) and the second connection (142) are soldered to the second side (152S) of the sense resistor (150), and wherein the second side (152S) of the sense resistor (150) comprises a solder stop (154) containing the solder. [16] A molded electronic component (100) according to any one of the preceding claims, wherein a second contact pad (112) is attached on an opposite side of the power semiconductor chip (110) from the first contact pad (111) to a lead frame (130) partially embedded in the molding compound. [17] Electronic component (200) comprising: a plurality of power semiconductor chips (110) mounted on a substrate; a first terminal (131); a second terminal (132) separate from the first terminal; a measuring resistor (150) having a first side (150S1) attached to the first terminal (131) and a second side (150S2) opposite the first side; a first connection (141) between a first contact pad (111) of each of the power semiconductor chips and the second side (150S2) of the measuring resistor (150); and a second connection (142) between the second terminal (132) and the second side (150S2) of the measuring resistor, wherein the measuring resistor (150) has a higher specific resistance than the first connection (141), and wherein a resistance of the measuring resistor varies by less than 10 percent over a normal operating temperature range of the electronic component. [18] Electronic component (200) according to claim 17, wherein the power semiconductor chips (110) are attached to a first metal structure (1301) of the substrate, wherein the second side (150S2) of the measuring resistor is attached to a second metal structure (1302) of the substrate, and wherein the first connection (141) is implemented by a part of the second metal structure (1302) of the substrate and one or more metallic bodies (160) connecting the first contact pad (111) of each of the power semiconductor chips (110) to the second metal structure (1302) of the substrate, and / or wherein the second connection (142) is implemented by a portion of the second metal structure (1302) of the substrate and one or more elongated electrically conductive bodies (171) connecting the second terminal (132) to the second metal structure (1302) of the substrate. [19] The electronic component according to claim 17 or 18, wherein the first terminal (131) is implemented by a first metallic body (1311) and one or more second metallic bodies (1312) connecting the first metallic body to the first side of the measuring resistor. [20] Electronic component (200) according to claim 17, wherein the power semiconductor chips (110) are attached to a first metal structure (1301) of the substrate, wherein the first side (150S1) of the measuring resistor is attached to a second metal structure (1302) of the substrate, and wherein the first terminal (131) is implemented by a first metallic body (1311), the second metallic structure (1302) of the substrate, and one or more second metallic bodies (1312) connecting the first metallic body (1311) to the second metallic structure of the substrate.

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