Optoelectronic device and method for producing optoelectronic devices

Abstract

Optoelectronic device (1), comprising - an optoelectronic component (21) intended to receive or generate radiation, - a frame (4) having a cavity (51) in which the optoelectronic component is arranged, - a connection carrier (3) to which the optoelectronic component is attached, and - a cover (45) which covers the cavity and which forms a radiation passage surface (10) for the radiation, wherein - a beam path from the optoelectronic component to the radiation passage surface is free of a encapsulation material for the optoelectronic component, - the connection carrier is designed as a printed circuit board, and a through-hole through the connection carrier is designed as an opening (33) for air exchange between the cavity and the environment, - the device is designed as an ambient light sensor and the cover (45) determines a short-wave flank of a sensitivity distribution of the ambient light sensor, and - the device has a further filter (27) which determines the long-wave flank of the spectral sensitivity distribution of the ambient light sensor, so that the spectral sensitivity distribution of the ambient light sensor simulates the sensitivity distribution of the human eye.

Description

[0001] The present application relates to an optoelectronic device having at least one optoelectronic component and a method for producing optoelectronic devices.

[0002] For example, electronic or optoelectronic devices are known from US 2004 / 0 038 442 A1, US 2008 / 0 237 768 A1, DE 11 2005 001 067 T5, US 2006 / 0 244 118 A1, DE 10 2006 008 793 A1, US 2007 / 0 194 212 A1, and JP 2003 - 152 123 A.

[0003] In optoelectronic devices, different thermal expansion coefficients of individual components, such as the semiconductor chip, the semiconductor chip encapsulation, and the housing, can cause significant mechanical stress on individual elements or areas of the device. This effect can become even more pronounced with increasing miniaturization of the device design.

[0004] One problem to be solved is to provide an optoelectronic device that is particularly compact and characterized by good optoelectronic properties over a long operating period. Furthermore, a method is to be provided by which optoelectronic devices can be manufactured simply and reliably.

[0005] According to at least one embodiment of the optoelectronic device, the optoelectronic device comprises an optoelectronic component provided for receiving and / or generating radiation. The optoelectronic device can, in particular, comprise a further optoelectronic component. The further optoelectronic component can form an emitter-detector pair with the optoelectronic component. The optoelectronic component and / or optionally the further optoelectronic component can, in particular, be embodied as an unhoused semiconductor chip. This means that the optoelectronic component itself is free of a housing in which the semiconductor chip is arranged. A compact design of the device is thus simplified.

[0006] According to at least one embodiment of the optoelectronic device, the optoelectronic device has a connection carrier to which the optoelectronic component and optionally the further optoelectronic component are attached. In particular, an optoelectronic component can be electrically conductively connected to at least two connection surfaces of the connection carrier. The connection carrier can be designed, for example, as a circuit board, such as a printed circuit board (PCB), or as a metal-core circuit board. The connection carrier can terminate the optoelectronic device on the rear side, i.e., on a side opposite a radiation passage surface of the optoelectronic device. As an alternative to a circuit board, the connection carrier can be designed, for example, as a lead frame.

[0007] According to at least one embodiment of the optoelectronic device, it is designed as a surface-mounted device (SMD). The connection carrier, such as the printed circuit board, is part of the optoelectronic device, which can be arranged, for example, on another printed circuit board and electrically connected to it for assembly.

[0008] According to at least one embodiment of the optoelectronic device, the connection carrier has contact surfaces for external electrical contacting on the side facing away from the radiation passage area. The contact surfaces can be electrically connected to the optoelectronic component and, if appropriate, to the further optoelectronic component via vias through the connection carrier. The optoelectronic device can thus be electrically contacted externally from the rear side.

[0009] According to at least one embodiment of the optoelectronic device, the optoelectronic device comprises a frame. The frame may have a cavity in which the optoelectronic component is arranged. The cavity may extend completely through the frame in one direction. The frame may be arranged on the connection carrier and further fastened thereto, for example, by means of a fastening layer. In particular, the cavity may completely encircle the optoelectronic component in the lateral direction.

[0010] According to at least one embodiment of the optoelectronic device, the optoelectronic device comprises a cover. The cover, in particular, completely covers the cavity of the frame and forms a radiation passage area for the radiation to be received or generated by the optoelectronic component. The cover is thus located in the beam path of the optoelectronic component.

[0011] According to at least one embodiment of the optoelectronic device, the cover is formed as a film. The film may contain a polyimide or consist of a polyimide.

[0012] A polyimide refers in particular to a polymer with imide groups as essential structural units of the polymer main chain, whereby the imide groups can be present as linear or cyclic units. Furthermore, in addition to the imide groups, the polymer can also contain other functional groups as components of the polymer main chain, for example, amide, ester, and / or ether groups.

[0013] Polyimides can be characterized by high stability and strength over a wide temperature range. The film is preferably designed to be highly temperature-resistant. This means that the film can withstand temperatures of at least 200 °C, particularly preferably at least 250 °C. Due to the high temperature resistance and heat distortion temperature, a film comprising a polyimide can be exposed to temperatures that can typically occur during soldering processes, for example, during the manufacturing process or further processing of the optoelectronic device.

[0014] According to at least one embodiment of the optoelectronic device, the connection carrier is arranged on the side of the frame facing away from the cover. In the vertical direction, the optoelectronic device thus extends between the connection carrier and the cover.

[0015] According to at least one embodiment of the optoelectronic device, a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component. In other words, the cavity of the frame is not filled with an encapsulation, such as a silicone or epoxy, that partially or completely encloses the optoelectronic component. The optical properties of the device are thus improved. Furthermore, the risk of mechanical stress on the optoelectronic component or a connecting conductor, for example a bond wire between the optoelectronic component and the connection carrier, due to varying degrees of thermal expansion of the frame and the encapsulation material can be avoided. The risk of premature failure of the device can thus be reduced.The cover protects the optoelectronic component from environmental influences such as dust.

[0016] According to at least one embodiment of the optoelectronic device, the cavity has an undercut region in a direction extending from the cover to the optoelectronic element. The undercut region is expediently designed such that it can accommodate the optoelectronic component.

[0017] According to at least one embodiment of the optoelectronic device, the cavity has a region that tapers at least partially from the cover toward the optoelectronic component. The cavity can therefore have a reflector-like basic shape at least partially. The cavity can be reflective at least partially. For example, the cavity can be provided with a coating that reflects radiation emitted and / or to be emitted by the optoelectronic component in a directed or diffuse manner. The frame can be formed using a material that has a high reflectivity for the radiation, preferably a reflectivity of at least 80%. For example, the frame can be formed from a plastic filled with reflective particles, such as titanium oxide particles.By designing the cavity in a reflective manner, the total radiation emitted through the radiation passage surface or the proportion of radiation passing through the radiation passage surface and detected by the optoelectronic component can be increased.

[0018] Alternatively or additionally, the frame, in particular the cavity, can have a region that is specifically designed to absorb radiation. In particular, at least 50% of the incident radiation, preferably at least 80% of the incident radiation, can be absorbed in this region. The frame can, for example, be black to the human eye. The proportion of scattered radiation deflected by the frame, in particular by the cavity, is thus reduced.

[0019] According to at least one embodiment of the optoelectronic device, the frame and the connection carrier, preferably the frame, the connection carrier, and the cover, are flush at least along one direction. Such a device can be manufactured in a simplified manner as a composite, with the frame, the connection carrier, and the cover emerging from the composite during separation, particularly in a common manufacturing step, by cutting them apart.

[0020] According to at least one embodiment of the optoelectronic device, the optoelectronic device has an opening for air exchange between the cavity and the environment. The cavity is therefore not hermetically sealed. The risk of force acting on the cover due to negative or positive pressure in the cavity during temperature changes of the optoelectronic device, for example, during assembly of the device by soldering, is thus eliminated or at least reduced. In particular, the connection carrier, for example a connection carrier designed as a printed circuit board, can have the opening. In particular, a via through the connection carrier can be designed as an opening.

[0021] According to at least one embodiment of the optoelectronic device, the further optoelectronic component is arranged in a further cavity, and the further cavity is spaced from the cavity. At least two optoelectronic components of the optoelectronic device can thus be arranged in cavities separate from one another. In particular, an emitter can be arranged in the cavity and a detector in the further cavity, or vice versa. However, more than one optoelectronic component can also be arranged in a cavity. For example, two detectors can be arranged in one cavity, which can be provided, for example, for detecting radiation in different spectral ranges.

[0022] A direct beam path between the optoelectronic component and the other optoelectronic component is suppressed by the frame. Even with a comparatively small distance between the optoelectronic components, the frame prevents or at least reduces unwanted signal components due to optical crosstalk.

[0023] According to at least one embodiment of the optoelectronic device, it is designed as a proximity sensor and / or as an ambient light sensor. In particular, the optoelectronic device can comprise an additional optoelectronic component in addition to the emitter-detector pair formed by the optoelectronic component and the further optoelectronic component. In this case, the emitter-detector pair can form the proximity sensor, and the additional optoelectronic component can form the ambient light sensor. The detector of the proximity sensor and the additional optoelectronic component can be arranged in a common cavity.

[0024] According to at least one embodiment, the optoelectronic device comprises: - an optoelectronic component intended to receive or generate radiation, - a frame having a cavity in which the optoelectronic component is arranged, - a connection carrier to which the optoelectronic component is attached, and - a cover which covers the cavity and which forms a radiation passage surface for the radiation, wherein a beam path from the optoelectronic component to the radiation passage surface is free of an encapsulation material for the optoelectronic component.

[0025] In a method for producing a plurality of optoelectronic devices, according to at least one embodiment, a connection carrier assembly is provided. Optoelectronic components are arranged on the connection carrier assembly. A frame element with a plurality of cavities is positioned on the connection carrier assembly such that the optoelectronic components are each arranged in a cavity. A cover is arranged on the frame element. The connection carrier assembly is severed into a plurality of connection carriers, on each of which at least one optoelectronic component and a frame with a cavity are arranged. In particular, during the severing, the cover, the frame element, and the connection carrier assembly can be severed in a common manufacturing step. This can be done, for example, mechanically, for example by sawing, or by a laser cutting process.

[0026] The described method is particularly suitable for producing an optoelectronic device described above. Features implemented in connection with the optoelectronic device can therefore also be used for the method, and vice versa.

[0027] In particular, the method can be used to create an optical device with an emitter-detector pair, in which the emitter and detector are optically separated from each other by the frame already formed from the frame element during the singulation process. Additional optical separation elements that would have to be subsequently added to the device can be dispensed with. This avoids additional costs while simultaneously improving the optoelectronic properties.

[0028] Further features, embodiments and expediencies emerge from the following description of the embodiments in conjunction with the figures.

[0029] They show: Fig. 1 shows a first embodiment of an optoelectronic device in a schematic sectional view; Fig. 2 shows a second embodiment of an optoelectronic device in a schematic sectional view; Fig. 3 Curves for the transmission T for embodiments of the cover as a function of the wavelength λ; and Fig. 4A to 4E show an embodiment of a method for manufacturing optoelectronic devices.

[0030] Identical, similar or similarly acting elements are provided with the same reference symbols in the figures.

[0031] The figures and the proportions of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0032] In Fig. Figure 1 shows a first exemplary embodiment of an optoelectronic device in a schematic sectional view. In this exemplary embodiment, the optoelectronic device 1 is designed as a proximity sensor in which an optoelectronic component 21 and another optoelectronic component 22 form an emitter-detector pair.

[0033] The optoelectronic device 1 has a connection carrier 3 to which the optoelectronic components 21, 22 are attached. On a rear side of the connection carrier 3 facing away from the optoelectronic components, contact surfaces 31 are formed, which are provided for the external electrical contacting of the optoelectronic device. The contact surfaces 31 are connected via vias 35 extending through the connection carrier 3 to connection surfaces 37, which in turn are electrically conductively connected to the optoelectronic components 21, 22. The vias can be formed as recesses in the connection carrier, the side surfaces of which are coated with an electrically conductive, preferably metallic, coating. The coated recesses can be filled with a filler material, such as a solder resist.

[0034] At least one of the optoelectronic components 21, 22 is preferably embodied as an unpackaged optoelectronic semiconductor chip. The optoelectronic component embodied as an emitter can be embodied as a luminescence diode, in particular as a light-emitting diode. The further optoelectronic component embodied as a detector can be embodied, for example, as a photodiode or as a phototransistor. Alternatively, an integrated circuit with a photosensitive region, such as an ASIC (application-specific integrated circuit), can also be used. The electrical contacting of the semiconductor chip can be achieved, for example, by means of a connecting conductor 25, such as a bonding wire.

[0035] A frame 4 is arranged on the connection carrier 3 and is mechanically stably connected to it, for example by means of a fastening layer, such as an adhesive layer (not explicitly shown).

[0036] The frame 4 has a cavity 51 and a further cavity 52, wherein the optoelectronic component 21 is arranged in the cavity 51 and the further optoelectronic component 22 is arranged in the further cavity 52. ​​The cavity 51 forms an aperture that defines a radiation cone, represented by a dotted line 71, for the radiation emerging from a main radiation passage surface 210 of the optoelectronic component 21. Accordingly, the further cavity 52 forms a further aperture that defines a further radiation cone 72. Radiation traveling to the optoelectronic device within this further radiation cone directly impinges on a further main radiation passage surface 220 of the further optoelectronic component 22.

[0037] An inner surface 510 of the cavity 51 has an inclined region 61 and an undercut region 63. The undercut region 63 is arranged closer to the optoelectronic component 21. In the undercut region, the cavity 51 is at least large enough to accommodate the optoelectronic component 21.

[0038] In the inclined region 61, the cavity 51 tapers toward the optoelectronic component 21. A boundary 53, which closes off the inclined region 61 on the side of the optoelectronic component 21, partially forms the aperture that defines the radiation cone 71. While the minimum lateral extent of the undercut region 63 of the cavity 51 is predetermined by the size of the optoelectronic component to be accommodated, the aperture can be adjusted largely independently of this by means of the boundary 53, in particular to a cross-section that is smaller when viewed from above onto the device 1.

[0039] Analogously, the further cavity 52 has a further inner surface 520 with a further inclined region 62 and a further undercut region 64.

[0040] During operation of the optoelectronic device 1, the first optoelectronic component 21 emits radiation through a window 9, represented by an arrow 91. A portion of this emitted radiation is reflected back, as illustrated by an arrow 92, and impinges on the further optoelectronic component 22.

[0041] The radiation cones 71, 72 and the distance of the window 9 from the optoelectronic device 1 are preferably adapted to one another such that the radiation cones 71, 72 do not overlap in the region of the window 9. This largely prevents radiation that does not exit the window 9 but impinges on the further component 22 as reflected scattered radiation from causing an interfering signal component. In other words, the optical crosstalk within the optoelectronic device between the component 21 and the further component 22 is suppressed.

[0042] On the upper side of the frame 4 facing away from the connection carrier 3, a cover 45 is arranged, which covers the cavities 51, 52. The cover forms a radiation passage area 10 for the optoelectronic device 1. The cover is provided to protect the optoelectronic components 21, 22 and, if applicable, the connecting conductors 25. Additional encapsulation of the optoelectronic components, which at least partially fills the cavities 51, 52 and directly adjoins the optoelectronic components 21, 22, is therefore not required. In particular, a beam path from the main radiation passage area 210 to the cover 45 is free of such encapsulation material. The radiation emitted or detected during operation passes through a free-radiation region between the cover 45 and the main radiation passage area 210 or the further main radiation passage area 220.

[0043] The risk of severe mechanical stress on the optoelectronic components 21, 22 and / or the connecting conductors 25 due to different thermal expansion coefficients of the encapsulation material, in particular the material directly adjacent to the connecting conductor 25, and the frame 4 can thus be avoided.

[0044] In the lateral direction, the connecting support 3 and the frame 4, and preferably also the foil, are flush. Such a device can be easily manufactured as a composite.

[0045] The cover 45 is preferably designed as a film, in particular as a film containing a polyimide.

[0046] In particular, the polyimide can contain or consist of a poly(diphenyl oxide pyromellitimide). A high-temperature-resistant cover and thus a solderable optoelectronic device 1 is thus easily realized. Such a film is marketed, for example, by DuPont de Nemours under the brand name "Kapton."

[0047] The cover 45, in particular the film, expediently has a transmission of at least 70%, preferably of at least 80%, particularly preferably of at least 90%, for the radiation emitted and / or to be detected during operation. A wavelength range for the radiation emitted and / or to be detected during operation is preferably between 700 nm and 1100 nm inclusive, particularly preferably between 800 nm and 1000 nm inclusive. For example, a peak wavelength of the emitted radiation can be 850 nm or 940 nm, each with a deviation of + / - 50 nm.

[0048] As in Fig. As shown in Figure 3, polyimide films can exhibit a transmission of approximately 90% in the wavelength range from approximately 700 nm to 1100 nm. The decrease in transmission at shorter wavelengths approximately corresponds to the sensitivity curve of the human eye in bright light, which drops at approximately 515 nm to half the value relative to the maximum value at approximately 560 nm. A polyimide film is therefore also suitable for defining the short-wavelength edge of a daylight sensor.

[0049] As an alternative to a film, a self-supporting plate, for example a plastic plate or a glass plate, can also be used for the cover 45.

[0050] By choosing the material for the cover 45 and / or by means of the shape of the cover, such as the thickness of the cover and / or by means of a structuring, for example by embossing, the transmission of the cover can be adapted to the respective requirements.

[0051] The connection carrier 3 has openings 33 through which air can be exchanged between the environment and the cavity 51 or the further cavity 52. ​​The risk of excessive mechanical stress on the cover 45 resulting from the formation of a negative or positive pressure in at least one of the cavities 51, 52 relative to the environment, for example, in the event of a temperature change, such as during assembly of the optoelectronic device by soldering, is thus largely reduced. The openings 33 can be formed by recesses in the connection carrier 3, analogous to the vias 35, whereby the openings 33, unlike the vias, are not filled or at least not completely filled.

[0052] Deviating from the described embodiment, the connection carrier can also be designed as a lead frame to which the optoelectronic components 21, 22 are electrically connected. Furthermore, the optoelectronic device can also have only one optoelectronic component or more than two optoelectronic components.

[0053] The optoelectronic device 1 described is particularly compact and cost-effective to manufacture, making it suitable for many applications. The optoelectronic device is particularly suitable as a proximity sensor and / or ambient light sensor in electronic devices, for example, in handheld devices such as mobile phones.

[0054] The Fig. 2 in a schematic sectional view, the second embodiment essentially corresponds to the one described in connection with Fig. 1. In contrast, the cavity 51 is formed with a reflector-like basic shape. Radiation emerging at a comparatively large angle through the main radiation passage surface 210 and / or through a side surface of the optoelectronic component 21 can thus emerge from the radiation passage surface 10 of the device 1. Furthermore, the inner surface 510 of the cavity 51 is provided with a coating. In this exemplary embodiment, the cavity is designed to be reflective for the radiation emitted by the optoelectronic component 21 by means of the coating 55. The coating can have a reflectivity of 60% or more, preferably 80% or more. For example, a metal such as aluminum, silver, rhodium, palladium, chromium or nickel, or a metallic alloy comprising at least one of the aforementioned materials, is suitable for the coating.The total radiation output of the optoelectronic device can thus be increased. As an alternative to a coating, the frame 4 itself can be made of a reflective material. For example, the frame can contain a plastic filled with reflective particles, such as titanium oxide particles.

[0055] Deviating from the described embodiment, the further cavity 52 can also be provided with such a coating alternatively or in addition to the cavity 51. Furthermore, the frame 4 can also be made of a reflective material, and the coating can be designed to specifically absorb radiation in the spectral range to be detected. For example, the frame 4 or the coating 55 can absorb at least 50% of the incident radiation.

[0056] Of course, a coating as described above can also be used in the context of Fig. 1 described first embodiment. For example, the undercut region 63 of the cavity 51 can be provided with such a coating completely or only in certain regions.

[0057] Furthermore, in contrast to the first exemplary embodiment, an additional optoelectronic component 23 is arranged in the further cavity 52 and can be electrically contacted externally via contact surfaces 31. The additional optoelectronic component 23 is provided for detecting radiation in a detection range different from the detection range of the further optoelectronic component 22. The additional optoelectronic component is preferably designed as an ambient light sensor whose spectral sensitivity distribution approximates or corresponds to the sensitivity distribution of the human eye. The emitter-detector pair preferably operates in the near-infrared spectral range, in particular in the wavelength range between 800 nm and 1000 nm inclusive.

[0058] The different sensitivity distributions of the further component 22 and the additional component 23 are achieved in this exemplary embodiment by means of a filter 26 on the further component 22 and by means of a further filter 27 on the additional component 23. The further filter 27 is preferably designed such that, together with the transmission of the cover 45, it simulates the sensitivity distribution of the human eye. When using a polyimide film, a filter that determines the long-wave flank of the sensitivity radiation is sufficient for this purpose. The use of a comparatively expensive bandpass filter is therefore unnecessary.

[0059] The further component 22 and the additional component 23 can thus be of identical design, except for the different types of filters. Alternatively or additionally, different sensitivity distributions can be achieved by using different types of components.

[0060] Deviating from the described embodiment with the further component 22 and the additional component 23, the further component 22 can also have two radiation-detecting regions. The functionality described in connection with the additional component 23 can thus be integrated into the further component. The further component can thus be designed as a detector of a proximity sensor and as an ambient light sensor.

[0061] Furthermore, in contrast to the first exemplary embodiment, a via 35 is formed as an opening 33 through which air can be exchanged between the cavity 51 and the environment. The via 35 is formed as a recess, the side surfaces of which are provided with an electrically conductive contact coating 36. The recess with the contact coating is free of a filler material, so that a path for air exchange is created. Preferably, for each cavity 51, 52, at least one via is formed as such an opening. Openings in addition to the vias are therefore not required, but can be provided additionally. Several vias per cavity, in particular all vias, can be formed as openings. Of course, vias formed as openings can also be used in the case of the Fig. 1 described first embodiment can be applied.

[0062] An embodiment of a method for producing an optoelectronic device is described in the Fig. 4A to 4E are shown schematically in sectional view. A connection carrier assembly 30, from which several connection carriers are produced during production, is shown in Fig. 4A. For simplified illustration, only a portion of the connection carrier assembly 30 is shown, with which an optoelectronic device is formed during manufacture.

[0063] The connection carrier 3, for example a printed circuit board, has through-contacts 35 via which rear contact surfaces 31 are connected to front connection surfaces 37.

[0064] Furthermore, the connection carrier 3 has openings 33 that extend through the connection carrier. The openings and the recesses for the vias 35 can be formed in a common manufacturing step, whereby the openings 33, unlike the vias 35, are not filled with a filler material, or are at least only partially filled with it.

[0065] A plurality of preferably unpackaged optoelectronic components 21, 22, 23 are arranged on the connection carrier assembly 30 and electrically contacted with the connection surfaces 37. This can be done, for example, by means of a soldered connection, an electrically conductive adhesive connection (not explicitly shown) or by means of a connecting conductor 25, such as a bonding wire ( Fig. 4B).

[0066] A frame element 40 with a plurality of cavities 51, 52 is positioned on the connection carrier assembly 30 with the already mounted and contacted optoelectronic components 21, 22, 23 such that the components are arranged within the cavities. The frame 4 can be attached to the connection carrier assembly 30, for example, by means of a fastening layer, such as an adhesive layer (in Fig. 4C not explicitly shown).

[0067] An optional coating 55 of the frame element 40 is preferably applied before the frame element is attached to the connection carrier 30.

[0068] On a side of the frame element 40 facing away from the connection carrier 30, a cover 45 is applied, which covers the cavities 51, 52. For example, a film, in particular a polyimide film, can be stretched over the cavities 51, 52 as a cover.

[0069] The resulting composite of connection carrier assembly 30, frame element 40, and cover 45 is severed along separating lines 8, resulting in separate optoelectronic devices 1 in which the frame 4, the connection carrier 3, and the cover 45 are flush, at least in some areas. Severing can be performed mechanically, for example by sawing, or by coherent radiation, for example by a laser cutting process ( Fig. 4D).

[0070] A finished optoelectronic device 1, which is essentially as described in connection with Fig. 2 is described in Fig. 4E shown.

[0071] The described method allows optoelectronic devices to be manufactured in a composite in a simple and reliable manner, whereby the composite is separated to produce finished surface-mountable optoelectronic devices for further assembly.

[0072] By means of the cover 45, the optoelectronic components 21, 22, 23 are already protected during separation into optoelectronic devices 1. An additional encapsulation material such as a potting compound to protect the optoelectronic components is not required.

Claims

[1] Optoelectronic device (1) comprising - an optoelectronic component (21) designed to receive or generate radiation, - a frame (4) having a cavity (51) in which the optoelectronic component is arranged, - a connector carrier (3) to which the optoelectronic component is attached, and - a cover (45) that covers the cavity and forms a radiation transmission surface (10) for the radiation, wherein - a beam path from the optoelectronic component to the radiation transmission surface is free of any encapsulation material for the optoelectronic component, - the connection carrier is designed as a printed circuit board, and a via through the connection carrier is designed as an opening (33) for air exchange between the cavity and the environment, - the device is designed as an ambient light sensor and the cover (45) determines a short-wavelength edge of a sensitivity distribution of the ambient light sensor, and - the device includes a further filter (27) which determines the long-wavelength edge of the spectral sensitivity distribution of the ambient light sensor, so that the spectral sensitivity distribution of the ambient light sensor replicates the sensitivity distribution of the human eye. [2] Optoelectronic device according to claim 1, wherein the connecting carrier is arranged on the side of the frame facing away from the cover. [3] Optoelectronic device according to claim 1 or 2, wherein the optoelectronic device has contact surfaces (31) for external electrical contacting on the side facing away from the radiation transmission surface and the contact surfaces are electrically connected to the optoelectronic component via vias (35) through the terminal carrier. [4] Optoelectronic device according to one of the preceding claims, wherein the cover is designed as a film containing a polyimide. [5] Optoelectronic device according to one of the preceding claims, wherein the frame, the connector carrier and the cover are flush at least along one direction. [6] Optoelectronic device according to one of the preceding claims, wherein the cavity has an undercut area (63) in a direction extending from the cover to the optoelectronic component. [7] Optoelectronic device according to one of the preceding claims, wherein the cavity has a region (61) which tapers from the cover towards the optoelectronic component at least in part. [8] Optoelectronic device according to one of the preceding claims, wherein the optoelectronic device comprises a further optoelectronic component (22) which forms an emitter-detector pair with the optoelectronic component. [9] Optoelectronic device according to claim 8, wherein the further optoelectronic component is arranged in a further cavity (52) and the further cavity is spaced apart from the cavity. [10] Method for manufacturing a plurality of optoelectronic devices comprising the steps: a) Provision of a junction carrier network (30); b) Arranging optoelectronic components (21, 22, 23) on the connection carrier assembly; c) Positioning a frame element (40) with a plurality of cavities (51, 52) on the connection carrier assembly such that the optoelectronic components are each arranged in a cavity; and d) Arranging a cover (45) on the frame element; and e) Cutting the connection carrier assembly into a plurality of connection carriers (3), on each of which at least one optoelectronic component and a frame with a cavity are arranged, wherein the connection carrier is designed as a printed circuit board, and a via through the connection carrier is designed as an opening (33) for air exchange between the cavity and the environment, wherein - the devices are designed as ambient light sensors and the cover (45) determines a short-wavelength edge of a sensitivity distribution of the ambient light sensor, and - the devices include a further filter (27) that determines the long-wavelength edge of the spectral sensitivity distribution of the ambient light sensor, so that the spectral sensitivity distribution of the ambient light sensor replicates the sensitivity distribution of the human eye. [11] Method according to claim 10, wherein in step e) the cover, the frame element and the connecting support assembly are cut. [12] Method according to claim 10 or 11, by which a device according to any one of claims 1 to 9 is manufactured.

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