POWER SEMICONDUCTOR MODULE STRUCTURE

Abstract

Power semiconductor module structure comprising a power semiconductor module (1, 2) and a flow path component (31) connected thereto, wherein the power semiconductor module (1, 2) comprises: a metal base plate (12) having a first surface and a second surface; a multilayer substrate (15) connected to the first surface, wherein the multilayer substrate (15) comprises a third surface and a fourth surface; a semiconductor element (16) supported on the third surface; a resin housing (11) arranged on the side of the first surface of the metal base plate (12), wherein the resin housing (11) surrounds the multilayer substrate (15) and the semiconductor element (16); and a cooling housing (13, 23) having a bottom wall (13a, 23a) and a side wall (13b, 23b) formed around the bottom wall (13a, 23a), wherein one end of the side wall (13b, 23b) is connected to the side of the second surface of the metal base plate (12) such that a coolant can circulate in a space enclosed by the metal base plate (12), the bottom wall (13a, 23a) and the side wall (13b, 23b), wherein the cooling housing (13, 23) has an inlet section (13c, 23c) and an outlet section (13d, 23d) for the coolant, wherein the inlet portion (13c, 23c) and the outlet portion (13d, 23d) are connected to the side wall (13b, 23b) and are arranged along a peripheral edge of the second surface of the metal base plate (12), wherein the cooling housing (13, 23) comprises a first flange (13g1, 23g1) arranged on an inlet channel side (13e, 23e) of the inlet section (13c, 23c), and a second flange (13g2, 23g2) arranged on an outlet channel side (13f, 23f) of the outlet section (13d, 23d), wherein the flanges (13g1, 13g2, 23g1, 23g2) are arranged in positions on opposite sides to each other so as to have the cooling casing (13, 23) therebetween, wherein the first flange (13g1, 23g1) and the second flange (13g2, 23g2) each have a flat main surface which is parallel to the front surface of the metal base plate (12), wherein the first flange (13g1, 23g1) comprises a first channel portion (13eg, 23eg) facing the inlet channel (13e, 23e) and a pair of first screw holes (13h, 23h) arranged to have the first channel portion (13eg, 23eg) therebetween, wherein the second flange (13g2, 23g2) comprises a second channel portion (13fg, 23fg) facing the outlet channel (13f, 23f) and a pair of second screw holes (13h, 23h) arranged to have the second channel portion (13fg, 23fg) therebetween, and wherein the flow path member (31) comprises: a first connecting portion connected to the first flange (13g1, 23g1); a second connecting portion connected to the second flange (13g2, 23g2); a first flow path connected to the first connecting portion and capable of circulating the coolant; and a second flow path connected to the second connecting portion and capable of circulating the coolant, wherein the flow path component (31) is arranged on a lower surface of the cooling casing (13, 23).

Description

TECHNICAL FIELD

[0001] The present invention relates to a power semiconductor module structure including a power semiconductor module with a cooler that allows a coolant for cooling a semiconductor element to circulate and flow, and a flow path member connected to the power semiconductor module. STATE OF THE ART

[0002] In a device using a motor, such as typically a hybrid vehicle or an electric vehicle, a power conversion device is used to save energy. A power semiconductor module is widely used in such a power conversion device. Such a power semiconductor module includes a power semiconductor element for controlling a high current.

[0003] The power semiconductor element generates a large amount of heat when driving a high current. Furthermore, the size and weight of the power semiconductor module have been demanded, and there is a tendency for the output density to increase. Therefore, in the power semiconductor module with multiple power semiconductor elements, a cooling method affects the power conversion efficiency.

[0004] To improve the cooling efficiency of the power semiconductor module, there is a power semiconductor module including a liquid-cooling type heat sink, which cools heat generated by the power semiconductor element. Such a heat sink of the power semiconductor module includes: a metal base plate that transfers heat generated by the power semiconductor element; a heat sink connected to a rear surface of the metal base plate; and a cooling case connected to the metal base plate and accommodating the heat sink. The cooling case is configured to circulate a coolant in a space within the cooling case through an inlet channel and an outlet channel provided on the heat sink (Patent Document 1). For example, a nozzle is attached to the inlet channel and the outlet channel, and an external pipe or hose is connected to each of them.

[0005] In a hybrid vehicle or an electric vehicle, the space for mounting the power semiconductor module is limited. Consequently, there are cases where mounting the power semiconductor module and attaching the external pipe to the intake and exhaust ducts of the cooling casing is not easy. Furthermore, the process of mounting the power semiconductor module and attaching the external pipe to the intake and exhaust ducts of the cooling casing must be performed separately, making the process laborious.

[0006] Regarding a cooling element of the power semiconductor module, there is one that includes a connecting plate at an inlet passage and an outlet passage to facilitate connection with an additional cooling element or a terminal end plate (Patent Document 2). However, in such a cooling element, the inlet passage and the outlet passage are provided on a side surface of a plastic base having an upper surface to which the semiconductor module is attached, so that the semiconductor module to which the cooling element is attached becomes bulky. Moreover, since the connecting plate of the cooling element is not intended to be connected to an external pipe, the ease of attachment of the external pipe was insufficient.Furthermore, there remains a problem that a process of mounting the power semiconductor module to a hybrid vehicle, an electric vehicle, or the like and a process of fixing the external pipe to the inlet passage and outlet passage of the cooling member must be performed separately.

[0007] Patent documents 3 and 4 each describe generic power semiconductor modules with a heat sink, wherein a coolant flows through the heat sink. PRIOR ART DOCUMENTS PATENT DOCUMENTS Patent Document 1: Japanese Unexamined Patent Application Publication No. JP 2012 - 64 609 A Patent Document 2: Japanese translation of the PCT international application Publication No. JP 2013 - 513 240 A Patent document 3: DE 10 2008 016 960 A1 Patent document 4: US 2009 / 0 072 386 A1 SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present invention has been made in view of such matters and has an object to provide a power semiconductor module that can facilitate connection with an inlet port and an outlet port of a heat sink of the power semiconductor module and also facilitate a process of assembling the power semiconductor module, a flow path member to be combined with the power semiconductor module, and a power semiconductor module structure. MEANS FOR SOLVING THE TASKS

[0009] To achieve the object as described above, according to the present invention, a power semiconductor module structure according to claim 1 is provided. Preferred embodiments of the invention are the subject of the dependent claims, the drawings and the description of embodiments. EFFECTS OF THE INVENTION

[0010] According to the power semiconductor module of the present invention, connection with an inlet port and an outlet port of a heat sink of the power semiconductor module can be facilitated, and a process of assembling the power semiconductor module can also be facilitated. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view illustrating an appearance of an embodiment of a power semiconductor module of the present invention. Fig. 2 is a perspective view of the power semiconductor module of Fig. 1 seen from a rear surface. Fig. 3 is a perspective view of the power semiconductor module of Fig. 1 in exploded view. Fig. 4 is a cross-sectional view along line IV-IV of Fig. 1. Fig. 5 is a plan view of the power semiconductor module of Fig. 1. Fig. 6 is a circuit diagram of an inverter circuit of the power semiconductor module of Fig. 1. Fig. 7 is a perspective view of one embodiment of a flow path component of the present invention. Fig. 8 is a front view of an embodiment of a power semiconductor module structure of the present invention. Fig. 9 is a partially enlarged view of the power semiconductor module structure of Fig. 8. Fig. 10A is a perspective view of an appearance of another embodiment of the power semiconductor module of the present invention as seen from above. Fig. 10B is a perspective view of the appearance of another embodiment of the power semiconductor module of the present invention as seen from a rear surface side. Fig. 11A is a perspective view of an appearance of a conventional power semiconductor module seen from above. Fig. 11B is a perspective view of the appearance of the conventional power semiconductor module viewed from a rear surface side. Fig. 12 is a plan view of an embodiment of the power semiconductor module of the present invention. Fig. 13 is a circuit diagram of an inverter circuit of the power semiconductor module of Fig. 12. Fig. 14 is a plan view of an embodiment of the power semiconductor module of the present invention. Fig. 15 is a graph showing a measurement result of a peak voltage. Fig. 16 is a graph showing a measurement result of a peak voltage. MODE FOR CARRYING OUT THE INVENTION

[0011] Embodiments of a power semiconductor module of the present invention will be specifically described with reference to the accompanying drawings. Terms indicating directions such as "upper," "lower," "bottom," "front," and "rear" are used with reference to the directions in the accompanying drawings. (First embodiment)

[0012] Fig. 1 is a perspective view illustrating an appearance of an embodiment of a power semiconductor module of the present invention. Fig. 2 is a perspective view of the power semiconductor module of Fig. 1 seen from one side of the rear surface. A power semiconductor module 1 as shown in Fig. 1 and Fig. 2 is a 6-in-1 power semiconductor module forming an inverter circuit. The power semiconductor module 1 includes a metal base plate 12, a resin package 11 housing a semiconductor chip 16, a bottom surface of which is bonded to a front surface of the metal base plate 12, and a cooling case 13 connected to a rear surface of the metal base plate 12.

[0013] External terminals 14A-14E protrude from the interior of the resin case 11 and along a periphery of an upper surface of the resin case 11. Further, the resin case 11 is provided with through-holes 11a penetrating in the thickness direction thereof. A total of eight through-holes 11a are formed near both ends of a longitudinal edge portion of the upper surface of the resin case 11 and at two spaced points between the two ends. Of such through-holes 11a, the two through-holes 11a formed near a longitudinal center at an end portion of the long side of the resin case 11 are first through-holes that can penetrate according to first screw holes formed on a flange 13g1 of the cooling case 13, as described below.Meanwhile, the two through holes 11a formed near a longitudinal center at the other end portion of the long side of the resin case 11 are second through holes that can penetrate according to second screw holes formed on a flange 13g2 of the cooling case 13, as described below.

[0014] The metal base plate 12 is a rectangular plate having a front surface, i.e., a first surface, and a rear surface opposite to the front surface, i.e., a second surface. The metal base plate 12 has substantially the same size as the resin case 11. As shown in Fig. As shown in Figure 2, the metal base plate 12 is provided with through holes 12a penetrating in a thickness direction thereof. Such through holes 12a are formed at the same intervals as the through holes 11a provided on the resin case 11 and arranged in the same positions as the through holes 11a.

[0015] The cooling casing 13, which is connected to the rear surface of the metal base plate 12, includes a bottom wall 13a and side walls 13b formed around the bottom wall 13a, and opens at an upper end. An upper end of the cooling casing 13 is connected to the metal base plate 12, for example, by brazing, thereby forming an interior space enclosed by the metal base plate 12 and the cooling casing 13. As shown in Fig. As shown in Figure 3, fins 17 are provided in such an interior space as heat sinks. The metal base plate 12, the cooling casing 13, and the fins 17 form a heat sink for the semiconductor chip 16. Note that the fins 17 are not limited to those with a thin plate shape as shown, but may be those with a pin shape. The interior of the cooling casing 13 can circulate a coolant supplied from the outside.

[0016] The cooling casing 13 includes an inlet portion 13c and an outlet portion 13d for the coolant at a center of the longitudinal edge portion. The inlet portion 13c and the outlet portion 13d are connected to the side wall of the cooling casing 13 and are arranged along a peripheral edge of the rear surface of the metal base plate 12. The inlet portion 13c includes an inlet channel 13e on a lower surface thereof, and the outlet portion 13d includes an outlet channel 13f on a lower surface thereof. Such lower surfaces are arranged on an opposite side relative to the metal base plate 12.The inlet channel 13e and the outlet channel 13f are formed on the lower surface of the inlet portion 13c and the lower surface of the outlet portion 13d, respectively, thereby limiting the height of the cooling case 13 constituting the heat sink compared to a case where they are formed on a side surface. This is therefore advantageous for a power semiconductor module to be mounted in a vehicle, for which a reduction in size, thickness, and weight is required. The inlet portion 13c and the outlet portion 13d can be arranged in such a manner as to be connected to the bottom wall of the cooling case 13.

[0017] The cooling casing 13 includes the flange 13g1, which is a first flange, on one side of the inlet channel 13e of the inlet section 13c. Meanwhile, the cooling casing 13 includes the flange 13g2, which is a second flange, on one side of the outlet channel 13f of the outlet section 13d. The flanges 13g1, 13g2 are a substantially elliptical plate and are arranged in such a manner that their major axis direction extends along a direction of the long side of the metal base plate. The flanges 13g1, 13g2 may be a substantially diamond-shaped plate. The flanges 13g1, 13g2 may be joined, for example, by inserting a washer made of a plating material, a brazing material, and an aluminum material around the inlet channel 13e and the outlet channel 13f and brazing them. In addition to the washer, the flanges 13g1, 13g2 can be fixed by bonding.The flanges 13g1, 13g2 are made of a material and structure sufficient to allow for screw fastening. The flanges 13g1, 13g2 include a main surface on a side remote from the metal base plate 12. According to the invention, each main surface of the flanges 13g1, 13g2 is parallel to the front surface of the metal base plate 12 and forms a plane. Furthermore, according to the invention, the flanges 13g1, 13g2 are arranged in positions on opposite sides of each other, sandwiching the cooling casing 13.

[0018] The flange 13g1 includes a passage portion 13eg, which is a first opening arranged to oppose the intake passage 13e. The flange 13g2 includes a passage portion 13fg, which is a second opening arranged to oppose the exhaust passage 13f. Further, the flange 13g1 is provided with screw holes 13h, which are a pair of first screw holes arranged to have the passage portion 13eg therebetween. The flange 13g2 is provided with the screw holes 13h, which are a pair of second screw holes arranged to have the passage portion 13fg therebetween. Such screw holes 13h are formed at the same intervals as the through holes 12a provided on the metal base plate 12 and arranged in the same positions as the screw holes 12a.Such screw holes 13h also serve as a screw hole for mounting the power semiconductor module 1 on a flow path component 31 (. Fig. 7) and as a screw hole for connecting the inlet channel and the outlet channel of the power semiconductor module to flow paths of the flow path member 31. The flanges 13g1, 13g2 may each be provided with one or more pairs of screw holes 13h.

[0019] A segment between the pair of screw holes of the flange 13g1 connected to the inlet portion 13c and a segment between the pair of screw holes of the flange 13g2 connected to the outlet portion 13d are preferably substantially parallel to each other. In the present embodiment, as illustrated, the segments extend along the long side direction of the metal base plate, so they are thus parallel to each other. The flange 13g1 and the flange 13g2 may be arranged to have the two side walls 13b among the four side walls 13b of the cooling casing 13 therebetween.

[0020] Fig. 3 shows an exploded perspective view of the power semiconductor module 1. The resin case 11 is made of an insulating resin such as PPS resin and urethane resin, and has a frame shape with an opening penetrating from the top surface to the bottom surface at a center. The external terminals 14A-14E are integrally mounted on the resin case 11 by insert molding or the like. The through holes 11a can be formed at the time of insert molding.

[0021] The metal base plate 12 includes the rectangular front surface and rear surface having substantially the same size as the resin case 11. The metal base plate 12 is made of a metal with favorable thermal conductivity, such as aluminum or an aluminum alloy, or a composite material (cladding material) of such a material and a brazing material. A rear surface of an insulating substrate 15, as a specific example of a multilayer substrate (i.e., a fourth surface), is bonded to the front surface of the metal base plate 12 by a bonding material such as solder, brazing material, or sintered material.

[0022] In the present embodiment, as shown, the three insulation substrates 15 are aligned in a row along a longitudinal direction at a center in a transverse direction of the metal base plate 12. Each insulation substrate 15 supports the four semiconductor chips 16 on a front surface of an insulation substrate 15, that is, a third surface. The semiconductor chips 16 according to the present embodiment, as shown, are each an example of a reverse conducting IGBT (RC-IGBT) in which an IGBT and a FWD are integrated into one chip. A total of two pairs of semiconductor chips electrically connected in parallel on an insulation substrate 15 form an upper arm and a lower arm of a phase constituting the inverter circuit. The upper arm consists of the two semiconductor chips 16A, which are first semiconductor elements connected in parallel.The lower branch consists of the two semiconductor chips 16B, which are second semiconductor elements connected in parallel. Then, the three insulating substrates 15 of the metal base plate 12 form the U-phase, V-phase, and W-phase of the inverter circuit. A set of external terminals 14A, 14D, 14E is electrically connected to the U-phase semiconductor chip 16. A set of external terminals 14B, 14D, 14E is electrically connected to the V-phase semiconductor chip 16. Furthermore, a set of external terminals 14C, 14D, 14E is electrically connected to the W-phase semiconductor chip 16. The through-hole 11a can be arranged between the external terminals 14A, 14B. The through-hole 11a can be arranged between the external terminals 14B, 14C. Such through holes 11a correspond to the pair of screw holes 13h of the flange 13g2.Furthermore, the through-hole 11a may be arranged between the external terminals 14D, 14E for the U-phase and the external terminals 14D, 14E for the V-phase. The through-hole 11a may be arranged between the external terminals 14D, 14E for the V-phase and the external terminals 14D, 14E for the W-phase. Such through-holes 11a correspond to the pair of screw holes 13h of the flange 13g1.

[0023] If a material of the cooling casing 13 is the same as that of the metal base plate 12, the two can therefore have the same thermal expansion coefficient, which is preferable. The fins 17 are incorporated as heat sinks in the substantially rectangular space enclosed by the bottom wall 13a and the side walls 13b. In one example, as shown in Fig. As shown in Figure 3, the fins 17 have a thin plate shape, and a plurality of them are arranged at intervals along a transverse direction of the cooling casing 13. An upper end of each fin 17 is connected to the rear surface of the metal base plate 12 by brazing. This conducts heat generated by the semiconductor chip 16 through the insulation substrate 15 and the metal base plate 12 to the fins 17.

[0024] In the space in the cooling casing 13 between the inlet portion 13c and the fins, a flow path 13i of the coolant introduced from the outside through the inlet channel 13e is formed. Meanwhile, between the outlet portion 13d and the fins 17, a flow path 13j is formed for discharging the coolant, which has flowed through gaps between the fins, toward the outlet channel 13f.

[0025] The fins 17 having a thin plate shape are arranged along the transverse direction of the cooling casing 13, so that cooling water supplied from the inlet portion 13c passes through the flow path 13i to flow through the gaps between the fins 17, and passes through the flow path 13j to be discharged from the outlet port 13f of the outlet portion 13d.

[0026] Fig. Figure 4 is a cross-sectional view along line IV-IV of Fig. 1. The insulation substrate 15 is formed by bonding a ceramic insulation plate 15a, a circuit board 15b selectively formed on a front surface of such a ceramic insulation plate 15a and made of a copper foil or the like, and a metal plate 15c formed on a back surface of such a ceramic insulation plate 15a and made of a copper foil or the like to each other. The connection of the circuit board 15b and the semiconductor chip 16 is performed using, for example, a solder 18 as a bonding material. The connection of the metal plate 15c and the metal base plate 12 is performed using, for example, the solder 18 as a bonding material. As the bonding material, a brazing material and a sintered material can also be used. The insulation substrate 15 and the semiconductor chip 16 in the resin package 11 are sealed by a sealing material made of an insulation resin such as, for example, a polyvinyl chloride resin.B. an epoxy resin or an insulating gel such as silicone to improve the insulating properties. It should be noted that in . Fig. 4, the illustration of a bonding wire electrically connected to an electrode provided on a surface of the semiconductor chip 16 and the like is omitted. Moreover, in Fig. 4, the illustration of the sealing material injected into a frame of the resin case 11 and a cover fixed to the upper surface of the resin case 11 is also omitted.

[0027] Fig. 5 shows a plan view of the power semiconductor module 1 of Fig. 1. It should be noted that, to facilitate understanding, the plan view shows a state in which the cover, the sealing material, and the bonding wire are not shown, and the insulating substrate 15 and the semiconductor chip 16 arranged in the resin package 11 are shown. The power semiconductor module 1 is, as described above, a 6-in-1 type power semiconductor module that forms the inverter circuit. Such an inverter circuit is shown in Fig. 6. The four semiconductor chips 16, which are connected to an insulating substrate 15, form, as described above, the upper branch and the lower branch of a phase. Furthermore, specifically in Fig. 5, the two semiconductor chips 16A and the semiconductor chips 16B arranged along the transverse direction of the metal base plate 12 constitute the upper branch and the lower branch, respectively. The two semiconductor chips 16A corresponding to the upper branch are arranged along a moving direction of the coolant flowing between the fins 17 directly below the metal base plate 12. The two semiconductor chips 16B corresponding to the lower branch are also similarly arranged along the moving direction of the coolant. This allows the cooling efficiency of the semiconductor chips 16A constituting the upper branch and the cooling efficiency of the semiconductor chips 16B constituting the lower branch to be configured to be equal.

[0028] The power semiconductor module 1 according to the present embodiment includes flanges 13g1, 13g2 at the inlet portion 13c and the outlet portion 13d of the cooling case 13, respectively, so that they can be connected to a component having an external flow path, that is, a flow path component 31, without using a pipe. Therefore, even as a power semiconductor module to be mounted in a vehicle with a limited mounting space, the mounting of the power semiconductor module can be performed very easily. Since neither a pipe nor a hose is used, no stress is applied to a connecting portion and the heat sink due to the arrangement of a pipe and a hose, and a reduction in reliability can be prevented.

[0029] The flange 13g1 is provided with a pair of screw holes 13h arranged to sandwich the channel portion 13eg connected to the intake channel 13e. The flange 13g2 is also provided with a pair of screw holes 13h arranged to sandwich the channel portion 13fg connected to the exhaust channel 13f. Such screw holes 13h are arranged at the same intervals and in the same positions as the through holes 11a of the resin case 11 and the screw holes 12a of the metal base plate 12. The screw holes 13h, the through holes 11a, and the screw holes 12a may be arranged in such a manner that screws can penetrate from an upper surface to a lower surface of the power semiconductor module 1 in a thickness direction.Preferably, the three types of holes may be arranged in such a manner that the respective axes of the screw holes 13h, the through holes 11a, and the screw holes 12a are coaxial. A cross-sectional shape of each hole is a circle, an oval, an ellipse, or the like, and is preferably a circle.

[0030] The screw holes 13h, the through holes 11a, and the screw holes 12a are arranged so that the power semiconductor module can be fixed to the flow path member 31 by the screws, and the inlet channel 13e and the outlet channel 13f can be connected to the flow paths of the flow path member 31, so that the labor of an assembly process can be reduced and the number of screws can be reduced. Moreover, rigidity when the power semiconductor module 1 is mounted can be improved. Furthermore, a total area of ​​a surface for fixing the power semiconductor module 1 and a surface for connecting the flow path can be reduced, so that the size reduction of the power semiconductor module 1 can be achieved.

[0031] The flanges 13g1, 13g2 are provided with one or more pairs of screw holes 13h so as to have the passage portion 13eg connected to the inlet passage 13e or the passage portion 13fg connected to the outlet passage 13f therebetween, whereby a screw fastening force for connecting the inlet passage 13e and the outlet passage 13f to the flow paths of the flow path member is uniformly applied to the vicinity of the inlet passage 13e and the outlet passage 13f, so that leakage in the vicinity of the inlet passage 13e and the outlet passage 13f can be prevented.

[0032] In the present embodiment, the flanges 13g1, 13g2 are arranged on one side of the lower surface of the inlet portion 13c and one side of the lower surface of the outlet portion 13d, respectively. In the power semiconductor module of a type that thus circulates the coolant from one side of the lower surface of the cooling casing 13, a height can be reduced, which is advantageous for reducing the thickness.

[0033] In the present embodiment, as shown, an example in which a tip end of the inlet portion 13c and a tip end of the outlet portion 13d are provided with the flange 13g1 and the flange 13g2, respectively, is shown, but this is not to exclude members other than the flanges, and a fixture having a function similar to that of the flanges may be used. (Second embodiment)

[0034] The flow path component 31 on which the power semiconductor module 1 according to the first embodiment is mounted will be described with reference to Fig. 7 described. Fig. 7 is a perspective view of the power semiconductor module 1 and the flow path component 31. A cross section is partially shown. In Fig. 7, the power semiconductor module 1 may be the same as the power semiconductor module 1 as shown in Fig. 1-6. Consequently, in Fig. 7 the power semiconductor module 1 and an element thereof the same symbols as those in Fig. 1-6 and a repeated description is omitted below.

[0035] The flow path member 31 in the present embodiment is substantially a rectangular prism, as shown in Fig. 7, and is mounted in such a manner that the lower surface of the cooling casing 13 of the power semiconductor module 1 faces an upper surface thereof. On the upper surface of the flow path member 31, a protrusion portion 31a1 abutting the flange 13g1 of the power semiconductor module 1, a protrusion portion 31a2 abutting the flange 13g2, and a protrusion portion 31d abutting a protrusion portion with the screw hole 12a of the metal base plate 12 are formed. Note that such protrusion portions 13a1, 31a2, 31d are not required for the upper surface of the flow path member 31. A portion of the flat upper surface of the flow path member 31 against which the flange 31g1 of the power semiconductor module 1 abuts may be a first connecting portion.Likewise, a portion of the flat upper surface of the flow path member 31 against which the flange 13g2 abuts may be a second connecting portion. Furthermore, the protrusion portion having the screw hole 12a of the metal base plate 12 may be configured to abut against the flat upper surface of the flow path member 31. Furthermore, instead of the protrusion portions 31a1, 31a2, 31d, a protrusion portion having a shape such that it can be joined to a cylindrical member coaxially connected to the flanges 13g1, 13g2 and the screw holes 12a may be used.

[0036] The protrusion portion 31a1, which abuts the flange 13g1, is provided with an opening 31b1 of a coolant introduction flow path 13f formed inside the flow path member 31, and is connected to the inlet channel 13e through the channel portion 13eg of the flange 13g1. Likewise, the protrusion portion 31a2, which abuts the flange 13g2, is provided with an opening 13b2 of a coolant outlet flow path 31g and is connected to the outlet channel 13f through the channel portion 13fg of the flange 13g2. The coolant introduction flow path 31f and the outlet flow path 31g may optionally be arranged inside the flow path member 31. In order to prevent leakage between the flange 13g1 and the projection portion 31a1 and between the flange 13g2 and the projection portion 31a2, an O-ring is preferably arranged.Moreover, a groove for fixing such an O-ring is preferably provided on a surface of the projection portions 31a1, 31a2.

[0037] The projection portion 31a1 is provided with a pair of nuts 31c for fastening a bolt so as to have the opening 31b1 therebetween. The projection portion 31a2 is also similarly provided with the pair of nuts 31c so as to have the opening 31b2 therebetween. Moreover, the projection portion 31d is provided with a nut 31e for fastening a bolt. The pair of projection portions 31d are arranged to have the projection portion 31a1 therebetween, and the nuts 31c and the nuts 31e are aligned. Likewise, the pair of projection portions 31d are arranged to have the projection portion 31a2 therebetween. Such nuts 31c, 31e are arranged in such a manner as to face the through holes 11a of the resin case 11 of the power semiconductor module 1, the screw holes 12a of the metal base plate 12, and the screw holes 13h of the cooling case 13.The screws penetrating such screw holes and the nuts are screw-connected, whereby the power semiconductor module 1 is fixed to the flow path member 31, and the inlet channel 13e and the outlet channel 13f of the power semiconductor module 1 are respectively connected to the opening 31b1 of the introduction flow path 31f and the opening 31b2 of the outlet flow path 31g of the flow path member 31.

[0038] The flow path member 31 is essentially a rectangular prism in one example as shown in Fig. 7, but may have any shape capable of mounting the power semiconductor module 1. Furthermore, the flow path member 31 is not limited to an independent member having the coolant introduction flow path 31f and the coolant outlet flow path 31g, but may be part of a member for cooling an engine component or an engine of a vehicle. The flow path member 31 is combined with the power semiconductor module 1 according to the first embodiment, so that the power semiconductor module 1 can be mounted without using a pipe or labor of an assembly process can be reduced. (Third embodiment)

[0039] A power semiconductor module structure 3 consisting of the power semiconductor module 1 according to the first embodiment and the flow path component 31 according to the second embodiment will be described with reference to Fig. 8 and Fig. 9 described. Fig. 8 is a front view of the power semiconductor module structure 3 and Fig. 9 is a partially enlarged view of section IX of Fig. 8. It should be noted that in Fig. 8 and Fig. 9 the power semiconductor module 1 and the flow path component 31 the same symbols as those in Fig. 1-7 and a repeated description is omitted below.

[0040] The power semiconductor module structure 3, as shown in Fig. 8 and Fig. 9, consists of the power semiconductor module 1 and the flow path component 31 according to the second embodiment, which are fastened by screws 33. As shown in Fig. As shown in Figure 9, an O-ring 32 is disposed between the flange 13g1 and the protrusion portion 31a1, thereby preventing leakage. Although not shown, the O-ring 32 is also disposed between the flange 13g2 and the protrusion portion 31a2. Preferably, one surface of the protrusion portions 31a1, 31a2 is provided with a groove, and the O-ring 32 is mounted in such a groove.

[0041] The power semiconductor module structure 3 according to the present embodiment is used so that the power semiconductor module 1 can be mounted without using a pipe or the labor of an assembling process can be reduced. (Fourth embodiment)

[0042] A power semiconductor module 2 according to another embodiment of the present invention will be described with reference to Fig. 10A and Fig. 10B described. Fig. 10A is a perspective view of the power semiconductor module 22 seen obliquely from above and Fig. 10B is a perspective view of the power semiconductor module 2 seen from a rear surface side.

[0043] The power semiconductor module 2, as in Fig. 10A and Fig. 10B, differs from the power semiconductor module 1, as shown in Fig. 1 and Fig. 2, in that, in a cooling casing 23 having a bottom wall 23a and side walls 23b, an inlet portion 23c and an outlet portion 23d for a coolant are arranged near corner portions at opposite angles of the metal base plate 12. Flanges 23g1, 23g2 are provided at a tip end of an inlet channel 23e of the inlet portion 23c and an outlet channel 23f of the outlet portion 23d, respectively. The flanges 23g1, 23g2 each include channel portions 23eg, 23fg, and further include a pair of screw holes 23h arranged to have the channel portion 23eg therebetween, and the pair of screw holes 23h arranged to have the channel portion 23fg therebetween.A screw hole 23h of the flange 23g1 is arranged relative to the through hole 11a and the screw hole 12a so that the screw can penetrate from the upper surface toward the lower surface of the power semiconductor module 1 in the thickness direction. A screw hole 23h of the flange 23g2 is also arranged similarly.

[0044] In the power semiconductor module 2 according to the present embodiment, similar to the power semiconductor module 1 according to the first embodiment, the tip end of the inlet portion 23c and the tip end of the outlet portion 23d of the cooling casing 23 are respectively provided with the flange 23g1 and the flange 23g2, so that connection with the flow path member suitable for a position of the tip end of the inlet portion 23c and the outlet portion 23d of the power semiconductor module 2 can be performed. Therefore, even as a power semiconductor module to be mounted in a vehicle with a limited mounting space, the mounting of the power semiconductor module can be easily performed.

[0045] As can be understood from the power semiconductor module 2 according to the present embodiment and the power semiconductor module 1 according to the first embodiment, in the power semiconductor module of the present invention, the position of the inlet portion and the outlet portion of the cooling case provided with the flanges is not particularly limited. (Comparative embodiment)

[0046] For comparison, a conventional power semiconductor module is 100 in Fig. 11A and Fig. 11B. Fig. 11A is a perspective view of an appearance of the power semiconductor module 100 seen from above and Fig. 11B is a perspective view of the appearance of the power semiconductor module 100 as seen from a rear surface.

[0047] In the conventional power semiconductor module 100, a pipe 114 on an inlet side and a pipe 115 on an outlet side are attached to a heat sink 113. There have been cases where, in the power semiconductor module 100 provided with such a pipe 114 and pipe 115, a process of assembling them and a process of attaching a hose to the pipe 114 and pipe 115 are not easy. Furthermore, a process of assembling the power semiconductor module 100 and a process of attaching a hose to the pipe 114 and pipe 115 are separate, so the processes require a lot of labor.

[0048] When comparing the conventional power semiconductor module 100 as shown in Fig. 11A and Fig. 11B, and the power semiconductor modules 1, 2 according to the first and fourth embodiments of the present invention as described above, effects of the invention are clear. (Fifth embodiment)

[0049] Fig. Fig. 12 is a plan view of a power semiconductor module 4. Note that, to facilitate understanding, the plan view shows a state in which the cover and sealing material are not shown, and the insulating substrate 15 and the semiconductor chips 16A1, 16A2, 16B1, 16B2 arranged in the resin package 11 are shown. Similar to the power semiconductor module 1 shown in Fig. 1-3, a configuration lower than the resin case 11 may include the metal base plate 12 and the cooling case 13. Specifically, the front surface of the metal base plate 12 is bonded to the lower surface of the resin case 11, and the cooling case 13 is connected to the rear surface of the metal base plate 12. It may be configured such that the fins arranged in the cooling case 13 have a thin plate shape, and a plurality of them are arranged at intervals along the transverse direction of the cooling case 13.

[0050] The resin case 11 is made of an insulating resin such as PPS resin and urethane resin and has a frame shape with an opening penetrating from the upper surface to the lower surface on an opposite side at a center. Here, the upper surface is located on a front side of the drawing, and the lower surface is located on a back side of the drawing. This is similar to the power semiconductor module 1 shown in FIG. Fig. 1-3. External terminals 14A, 14B, 14C, 141D, 141E, 142E, 143D, and 143E are integrally mounted on the resin case 11 by insert molding or the like. External terminal 14A is a U-terminal, external terminal 14B is a V-terminal, external terminal 14C is a W-terminal, external terminals 141D, 142D, and 143D are positive terminals (P-terminal), and external terminals 141E, 142E, and 143E are negative terminals (N-terminal).

[0051] The metal base plate 12 includes the rectangular front surface and rear surface on an opposite side having substantially the same size as the resin case 11. The metal base plate 12 is made of a metal with favorable thermal conductivity, such as aluminum or an aluminum alloy, or a composite material (cladding material) of such a material and a brazing material. A rear surface of an insulating substrate 15, as a specific example of a multilayer substrate, i.e., a fourth surface, is bonded to the front surface of the metal base plate 12 by a bonding material such as solder, brazing material, or sintered material.

[0052] In the insulation substrate 15, a lower surface of the ceramic insulation plate 15a is provided with a metal plate (illustration omitted), and an upper surface of the ceramic insulation plate 15a is provided with circuit boards 15ba, 15bb, 15bc, 15bd, 15be, 15bf. Furthermore, semiconductor chips 16A1, 16A2 are arranged on the circuit board 15bf by solder. Furthermore, semiconductor chips 16B1, 16B2 are arranged on the circuit board 15bb by solder.

[0053] Such an insulating substrate 15 is housed in an opening of the resin package 11. An electrode portion 14Fa, which is one end of a control terminal 14F, the circuit boards 15ba, 15bc, 15bd, and a control electrode provided on a front surface of the semiconductor chips 16A1, 16A2, 16B1, 16B2 as exposed in the opening of the resin package 11, are connected to each other by a wire 19.

[0054] Furthermore, a main electrode provided on a front surface of the semiconductor chips 16A1, 16A2 on the circuit board 15bf and a circuit board 15bb are connected by the wire 19. A main electrode provided on a front surface of the semiconductor chips 16B1, 16B2 on the circuit board 15bb and a circuit board 15be are connected by the wire 19.

[0055] The power semiconductor module 4 is a 6-in-1 type power semiconductor module that forms the inverter circuit. An example of such an inverter circuit is shown in Fig. 13 shown.

[0056] The four semiconductor chips 16A1, 16A2, 16B1, 16B2, which are connected to an insulating substrate 15, form a pair of an upper branch Au and a lower branch Al of a phase, ie, a leg. Further specifically, in Fig. 12, two pieces of semiconductor chips 16A1 and 16A2, and semiconductor chips 16B1 and 16B2, arranged along the transverse direction of the metal base plate 12, form the upper branch Au and the lower branch Al of a phase constituting the inverter circuit, for example, the U phase, respectively. The two pieces of semiconductor chips 16A1 and 16A2 corresponding to the upper branch Au are arranged along a moving direction of the coolant flowing between the fins 17 directly below the metal base plate 12. The two pieces of semiconductor chips 16B1 and 16B2 corresponding to the lower branch Al are also similarly arranged along the moving direction of the coolant.Thereby, a cooling efficiency of the semiconductor chip 16A1 and the semiconductor chip 16A2 constituting the upper arm Au and a cooling efficiency of the semiconductor chip 16B1 and the semiconductor chip 16B2 constituting the lower arm Al can be configured to be equal.

[0057] In the power semiconductor module 4, the three insulation substrates 15 are aligned in a row along the longitudinal direction at a center in the transverse direction of the metal base plate 12. Each insulation substrate 15 supports the four semiconductor chips 16A1, 16A2, 16B1, 16B2 on the front surface of an insulation substrate 15, that is, the third surface. The semiconductor chips 16A1, 16A2, 16B1, 16B2 according to the present embodiment, as illustrated, are each an example of a reverse conducting IGBT (RC-IGBT) in which an IGBT and a FWD are integrated into one chip. A total of two pairs of semiconductor chips electrically connected in parallel on an insulation substrate 15 form the upper arm Au and the lower arm Al of one phase, which constitutes the inverter circuit. The upper branch Au consists of the two pieces of the semiconductor chip 16A1 and the semiconductor chip 16A2, which are the first semiconductor elements connected in parallel on the circuit board 15bf.The lower branch A1 consists of the two pieces of semiconductor chip 16B1 and semiconductor chip 16B2, which are the second semiconductor elements, connected in parallel on the circuit board 15bb. Then, the three insulation substrates 15 of the metal base plate form the U-phase, V-phase, and W-phase of the inverter circuit.

[0058] The U-phase, the V-phase and the W-phase comprise a leg L u , one leg L v and one leg L w , which are a pair of the upper branch Au and the lower branch Al, respectively. Each of the leg L u , of the leg L v and the leg L w includes the insulation substrate 15, the first semiconductor elements forming the upper arm Au and the second semiconductor elements forming the lower arm Al, and a power supply terminal that supplies power to the first semiconductor elements and the second semiconductor elements.

[0059] When a special phase is described differently among the U phase, the V phase, and the W phase, and a phase other than the special phase, the special phase includes a first pair (leg) consisting of the upper arm and the lower arm, and the phase other than the special phase includes a second pair (leg) consisting of the upper arm and the lower arm. When the special phase is distinguished among the U phase, V phase, and W phase, for example, the U phase, and the phase other than the special phase, for example, the V phase, the insulating substrate 15 of the first leg is called the first multilayer substrate, and the insulating substrate 15 of the second leg is called the second multilayer substrate.As supported on the first multilayer substrate, the semiconductor elements constituting the upper arm are called first semiconductor elements, and the semiconductor elements consisting of the upper arm are called second semiconductor elements. As supported on the second multilayer substrate, the semiconductor elements constituting the upper arm are called third semiconductor elements, and the semiconductor elements constituting the upper arm are called fourth semiconductor elements. The power supply terminal that supplies power to the first semiconductor elements and the second semiconductor elements is called the first power supply terminal, and the power supply terminal that supplies power to the third semiconductor elements and the fourth semiconductor elements is called the second power supply terminal.

[0060] The power semiconductor module 4 according to the present embodiment includes a first pair consisting of the upper arm and the lower arm, and a second pair consisting of the upper arm and the lower arm. The first pair includes at least the first multilayer substrate as the multilayer substrate, the first semiconductor elements constituting the upper arm and the second semiconductor elements constituting the lower arm as the semiconductor element, and the first power supply terminal that supplies power to the first semiconductor elements and the second semiconductor elements. The second pair includes at least the second multilayer substrate as the multilayer substrate, the third semiconductor elements constituting the upper arm and the fourth semiconductor elements constituting the lower arm as the semiconductor element, and the second power supply terminal that supplies power to the third semiconductor elements and the fourth semiconductor elements.

[0061] Furthermore, as in Fig. 12, the power supply terminals of the legs for the U phase may each include the positive terminal 141D that can be connected to a positive side of an external power source, and the negative terminal 141E that can be connected to a negative side of the external power source. The power supply terminals of the legs for the V phase may each include the positive terminal 142D that can be connected to the positive side of the external power source, and the negative terminal 142E that can be connected to the negative side of the external power source. Furthermore, the power supply terminals of the legs for the W phase may each include the positive terminal 143D that can be connected to the positive side of the external power source, and the negative terminal 143E that can be connected to the negative side of the external power source.

[0062] For example, if the leg L u for the U-phase is defined as the first leg and either the leg L v for the V-phase or the leg L w for the W phase, for example the leg L v for the V phase, is set as the second leg, the positive terminal 141D is a first positive terminal, the negative terminal 141E is a first negative terminal, the positive terminal 143D is a second positive terminal, and the negative terminal 142E is a second negative terminal.

[0063] The positive terminal 141D for the U-phase, the positive terminal 142D for the V-phase, and the positive terminal 143D for the W-phase are different and independent from each other and may have the same shape. Meanwhile, the negative terminal 141E for the U-phase, the negative terminal 142E for the V-phase, and the negative terminal 143E for the W-phase are different and independent from each other and may have the same shape. The positive terminal 141D for the U-phase, the positive terminal 142D for the V-phase, and the positive terminal 143D for the W-phase may have the same size, and the negative terminal 141E for the U-phase, the negative terminal 142E for the V-phase, and the negative terminal 143E for the W-phase may have the same size.

[0064] The positive terminal 141D for the U-phase includes a body portion 141Db and a leg portion 141DI. The positive terminal 142D for the V-phase includes a body portion 142Db and a leg portion 142DI. The positive terminal 143D for the W-phase includes a body portion 143Db and a leg portion 143DI. In one example, as shown in Fig. As shown in Figure 12, the leg portions 141DI, 142DI, and 143DI each comprise three band-shaped elements, and the band-shaped elements are connected to the body portions 141Db, ​​142Db, and 143Db. At each terminal, the three band-shaped elements are provided in parallel.

[0065] The negative terminal 141E for the U-phase includes a body portion 141Eb and a leg portion 141E1. The negative terminal 142E for the V-phase includes a body portion 142Eb and a leg portion 142E1. The negative terminal 143E for the W-phase includes a body portion 143Eb and a leg portion 143E1. In the example shown in Fig. As shown in Figure 12, the leg portions 141EI, 142EI, and 143EI each comprise three band-shaped elements, and the band-shaped elements are connected to the body portions 141Eb, 142Eb, and 143Eb. At each terminal, the three band-shaped elements are provided in parallel.

[0066] The band-shaped elements of the positive terminal 141D for the U-phase, i.e., an extending direction of the leg portion 141DI, and the band-shaped elements of the negative terminal 141E for the U-phase, i.e., an extending direction of the leg portion 141EI, may be arranged in parallel. An extending direction of the leg portion 142DI of the positive terminal 142D for the V-phase and the leg portion 142EI of the negative terminal 142E for the V-phase may also be similarly arranged in parallel. An extending direction of the leg portion 143DI of the positive terminal 143D for the W-phase and the leg portion 143EI of the negative terminal 143E for the W-phase may also be similarly arranged in parallel.Furthermore, the positive terminal 141D for the U-phase, the positive terminal 142D for the V-phase, and the positive terminal 143D for the W-phase may be arranged in such a manner that an extending direction of the leg portion 141DI and an extending direction of the leg portion 142DI and the leg portion 143DI are parallel to each other. Furthermore, the negative terminal 141E for the U-phase, the negative terminal 142E for the V-phase, and the negative terminal 143E for the W-phase may be arranged in such a manner that an extending direction of the leg portion 141EI and an extending direction of the leg portion 142EI and the leg portion 143EI are parallel to each other.

[0067] The directions of the leg sections of the power supply terminals are parallel to each other, so that the inductance can be reduced.

[0068] With the respective power supply connections of the legs Lu , L v , L w A capacitor such as a film capacitor can be connected. An independent film capacitor or a common film capacitor can be connected between the positive terminal 141D and the negative terminal 141E for the U-phase, between the positive terminal 142D and the negative terminal 142E for the V-phase, and between the positive terminal 143D and the negative terminal 143E for the W-phase, respectively. In the circuit diagram, as shown in Fig. 13, a common film capacitor 25 is connected.

[0069] Furthermore, in the power semiconductor module 4, as can be seen from the top view of Fig. 14, a film capacitor 25A is provided between the positive terminal 141D and the negative terminal 141E for the U-phase, a film capacitor 25B is provided between the positive terminal 142D and the negative terminal 142E for the V-phase, and a film capacitor 25C is provided between the positive terminal 143D and the negative terminal 143E for the W-phase. The film capacitor 25A, the film capacitor 25B, and the film capacitor 25C, as shown, are each an independent film capacitor. The film capacitor 25A, the film capacitor 25B, and the film capacitor 25C may be housed in a case or the like to be integrated. Note that the plan view of Fig. 14 illustrates an embodiment in which the interior of the resin case 11 of the power semiconductor module 4 as shown in Fig. 12, is sealed by a sealing material and an upper end of the opening of the resin case 11 is covered with a cover 20.

[0070] The capacitance of the capacitors is preferably a total of 100 µF to 3000 µF, further preferably a total of 400 µF to 600 µF.

[0071] In the power semiconductor module 4 according to the present embodiment, the leg of each phase independently includes the power supply terminal consisting of the positive terminal and the negative terminal, so that, compared with a conventional power semiconductor module having a positive terminal common to the U-phase, V-phase, and W-phase and a negative terminal common to the U-phase, V-phase, and W-phase, a peak voltage generated during inverter operation can be reduced. Further, particularly in a conventional power semiconductor module having a three-phase inverter circuit in which a smoothing capacitor is connected between a positive terminal and a negative terminal, a peak voltage is superimposed between the positive terminal and the negative terminal to be generated at the time of turning off a specific phase and another phase.On the other hand, in the power semiconductor module 4 according to the present embodiment, a pair of the positive terminal and the negative terminal is provided independently for each phase, so that a length of the positive terminal and the negative terminal of each leg inside the power semiconductor module 4 can be reduced and made substantially equal, and a distance from the positive terminal and the negative terminal of each leg to the capacitor can be reduced, and hence a peak voltage can be reduced than the conventional one.

[0072] Fig. 15 is a graph indicating a measurement result of a peak voltage of the power semiconductor module 4 according to the present embodiment. Fig. Figure 16 is a graph showing a measurement result of a peak voltage of a conventional power semiconductor module. Comparing the graphs of Fig. 15 and Fig.16 was a superimposed peak voltage ΔV PVNV . generated at the V-phase power supply terminal at the time of U-phase turn-off is smaller compared to the conventional module using a power supply terminal common to the three phases. In an example as shown, even when a switching rate at the time of turn-off is set to approximately 1.5 times higher, ΔV PVNV a fifth of the conventional, approximately 20 V.

[0073] The power semiconductor module 4 according to the present embodiment may include a cooler similar to that of the power semiconductor module 1 according to the first embodiment. Therefore, even as a power semiconductor module to be mounted in a vehicle with limited mounting space, the mounting of the power semiconductor module can be performed easily. DESCRIPTION OF REFERENCE SYMBOLS 1, 2 Power semiconductor module 11 resin housing 11a Through hole 12 metal base plate 13, 23 Cooling housing 13a, 23a floor wall 13b, 23b side wall 13c, 23c inlet section 13d, 23d outlet section 13e, 23e inlet channel 13f, 23f exhaust channel 13g1, 23g1 flange (first flange) 13g2, 23g2 flange (second flange) 13eg, 23eg canal section (first canal section) 13fg, 23fg canal section (second canal section) 13h, 23h screw hole 14D, 14E external connection 15 Insulation substrate 16 Semiconductor chip (semiconductor element) 17 rib 25 film capacitor 31 Flow path component

Claims

[1] Power semiconductor module structure comprising a power semiconductor module (1, 2) and a flow path component (31) connected thereto, wherein the power semiconductor module (1, 2) comprises: a metal base plate (12) having a first surface and a second surface; a multilayer substrate (15) connected to the first surface, wherein the multilayer substrate (15) comprises a third surface and a fourth surface; a semiconductor element (16) supported on the third surface; a resin housing (11) arranged on the side of the first surface of the metal base plate (12), wherein the resin housing (11) surrounds the multilayer substrate (15) and the semiconductor element (16); and a cooling housing (13, 23) having a bottom wall (13a, 23a) and a side wall (13b, 23b) formed around the bottom wall (13a, 23a), wherein one end of the side wall (13b, 23b) is connected to the side of the second surface of the metal base plate (12) such that a coolant can circulate in a space enclosed by the metal base plate (12), the bottom wall (13a, 23a) and the side wall (13b, 23b), wherein the cooling housing (13, 23) has an inlet section (13c, 23c) and an outlet section (13d, 23d) for the coolant, wherein the inlet portion (13c, 23c) and the outlet portion (13d, 23d) are connected to the side wall (13b, 23b) and are arranged along a peripheral edge of the second surface of the metal base plate (12), wherein the cooling housing (13, 23) comprises a first flange (13g1, 23g1) arranged on an inlet channel side (13e, 23e) of the inlet section (13c, 23c), and a second flange (13g2, 23g2) arranged on an outlet channel side (13f, 23f) of the outlet section (13d, 23d), wherein the flanges (13g1, 13g2, 23g1, 23g2) are arranged in positions on opposite sides to each other so as to have the cooling casing (13, 23) therebetween, wherein the first flange (13g1, 23g1) and the second flange (13g2, 23g2) each have a flat main surface which is parallel to the front surface of the metal base plate (12), wherein the first flange (13g1, 23g1) comprises a first channel portion (13eg, 23eg) facing the inlet channel (13e, 23e) and a pair of first screw holes (13h, 23h) arranged to have the first channel portion (13eg, 23eg) therebetween, wherein the second flange (13g2, 23g2) comprises a second channel portion (13fg, 23fg) facing the outlet channel (13f, 23f) and a pair of second screw holes (13h, 23h) arranged to have the second channel portion (13fg, 23fg) therebetween, and wherein the flow path member (31) comprises: a first connecting portion connected to the first flange (13g1, 23g1); a second connecting portion connected to the second flange (13g2, 23g2); a first flow path connected to the first connecting portion and capable of circulating the coolant; and a second flow path connected to the second connecting portion and capable of circulating the coolant, wherein the flow path component (31) is arranged on a lower surface of the cooling casing (13, 23). [2] The power semiconductor module structure according to claim 1, wherein the resin case (11) includes a pair of first through-holes (11a) corresponding to the first screw holes (13h, 23h) and a pair of second through-holes (11a) corresponding to the second screw holes (13h, 23h), the first screw holes (13h, 23h) and the first through-holes (11a) being arranged in such a manner that a screw can be inserted in a thickness direction of the resin case (11), and the second screw holes (13h, 23h) and the second through-holes (11a) being arranged in such a manner that a screw can be inserted in the thickness direction of the resin case (11). [3] The power semiconductor module structure according to claim 1, wherein a segment between the first screw holes (13h, 23h) and a segment between the second screw holes (13h, 23h) are substantially parallel to each other. [4] The power semiconductor module structure according to claim 3, wherein respective major axis directions of the first flange (13g1, 23g1) and the second flange (13g2, 23g2) extend along a long side direction of the metal base plate (12). [5] The power semiconductor module structure according to claim 1, wherein the semiconductor element (16) comprises a plurality of first semiconductor elements (16A1, 16A2) constituting an upper arm of an inverter circuit and a plurality of second semiconductor elements (16B1, 16B2) constituting a lower arm of the inverter circuit, and the first semiconductor elements (16A1, 16A2) and the second semiconductor elements (16B1, 16B2) are arranged along a moving direction of a coolant that can circulate in the cooling case (13, 23). [6] The power semiconductor module structure according to claim 1, wherein the first flange (13g1, 23g1) and the second flange (13g2, 23g2) are each brazed to the cooling case (13, 23) through a washer. [7] The power semiconductor module structure according to claim 1, wherein: the first connecting portion is provided with nuts (31c) arranged with respect to the first screw holes (13h, 23h), and the second connecting portion is provided with nuts (31e) arranged with respect to the second screw holes (13h, 23h). [8] The power semiconductor module structure according to claim 1, wherein the first connecting portion and the second connecting portion are each provided with a groove for receiving an O-ring (32). [9] The power semiconductor module structure according to claim 1, wherein the power semiconductor module (1, 2) and the flow path member (31) are fixed by a plurality of screws. [10] The power semiconductor module structure according to claim 1, wherein the first connection channel and the second connection channel are each provided with a groove for receiving an O-ring (32), and each groove is provided with the O-ring (32). [11] A power semiconductor module structure according to claim 1, which is provided with a first pair consisting of an upper branch and a lower branch and a second pair consisting of an upper branch and a lower branch, wherein the first pair comprises at least a first multilayer substrate (15) as the multilayer substrate, first semiconductor elements (16A1, 16A2) forming the upper branch and second semiconductor elements (16B1, 16B2) forming the lower branch as the semiconductor element (16), and a first power supply terminal that supplies power to the first semiconductor elements (16A1, 16A2) and the second semiconductor elements (16B1, 16B2), and the second pair comprises at least a second multilayer substrate (15) as the multilayer substrate, third semiconductor elements constituting the upper arm and fourth semiconductor elements constituting the lower arm as the semiconductor element (16), and a second power supply terminal supplying power to the third semiconductor elements and the fourth semiconductor elements. [12] Power semiconductor module structure according to claim 11, wherein the first power supply terminal comprises a first positive terminal connectable to a positive side of a power source and a first negative terminal connectable to a negative side of the power source, the second power supply terminal comprises a second positive terminal connectable to the positive side of the power source and a second negative terminal connectable to the negative side of the power source, the first positive terminal and the second positive terminal are different terminals and have the same shape, and the first negative terminal and the second negative terminal are different terminals and have the same shape. [13] Power semiconductor module structure according to claim 12, wherein the first positive terminal and the second positive terminal have the same size, and the first negative terminal and the second negative terminal are the same size. [14] Power semiconductor module structure according to claim 12, wherein the first positive terminal and the second positive terminal each comprise a leg section, the first negative terminal and the second negative terminal each comprise a leg section, a direction of extension of the leg portion of the first positive terminal and a direction of extension of the leg portion of the first negative terminal are parallel to each other, a direction of extension of the leg portion of the second positive terminal and a direction of extension of the leg portion of the second negative terminal are parallel to each other, and the direction of extension of the leg portion of the first positive terminal and the direction of extension of the leg portion of the second positive terminal are parallel to each other. [15] Power semiconductor module structure according to claim 12, wherein the first positive terminal and the first negative terminal are configured in such a way that a first capacitor (25) can be connected therebetween, and the second positive terminal and the second negative terminal are configured in such a way that a second capacitor (25) can be connected therebetween.

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