Ion milling device and ion milling process

Abstract

A machining technology is provided to obtain a desired machining result while simultaneously suppressing the possibility of repositioning within a machining surface. The invention is aimed at providing an ion milling device comprising an ion source that emits an ion beam, a sample holder that receives a sample, and a sample sliding mechanism that moves the sample holder in a direction that includes a normal direction to an axis of the ion beam.

Description

Technical field

[0001] The present invention relates to an ion milling device and an ion milling method, e.g. to an ion milling device and an ion milling method for producing a sample that is observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM). State of the art

[0002] An ion milling device is a device that emits an argon ion beam onto a surface or cross-section of metal, glass or ceramic for polishing and is suitable as a pretreatment device for observing the surface or cross-section of a sample with an electron microscope.

[0003] In a related technique, when observing a sample cross-section with an electron microscope, an area around the observation section is cut with a diamond cutter or a fine-cut saw. The cross-section is then mechanically polished and mounted on a sample holder so that the electron microscope can image it. When observing a polymeric material or a soft sample, such as aluminum, mechanical polishing destroys the observation surface or leaves deep damage from particles of the polishing material. Furthermore, it is difficult to perform polishing when observing a rigid sample such as glass or ceramic. When observing a composite material formed by stacking soft and rigid materials, it is extremely difficult to process the cross-section.

[0004] In this respect, the soft sample can be machined using ion milling without damaging the surface shape, and the rigid sample and the composite material can be polished. Additionally, the cross-section can be effectively determined in reflection. Patent document 1, for example, discloses an ion milling device that emits the ion beam when the sample is tilted or rotated to suppress irregularities in the strip shape of a machining surface. Furthermore, patent document 2 discloses an ion milling device with which both cross-sections and flat surfaces can be machined in the same vacuum chamber. Documents of related technology Patent documents Patent Document 1: JP 2014-139938 A, Patent document 2: DE 11 2011 103 677 T5 Summary of the invention; Technical task

[0005] The inventor of the present application has extensively studied a machining method in cross-sectional milling and has gained the following insights.

[0006] Cross-sectional milling is a process in which part of the ion beam is shielded by a mask (shielding plate) positioned in the upper section of a sample, and the sample's cross-section is sputtered along the mask's face. This yields the sample's cross-section along the mask's face.

[0007] However, if processing needs to be performed over a processing width (observation width) equal to or greater than an ion beam width or a large number of processing points, the sample chamber is opened to the air, a processing position is changed, and the sample chamber is re-evacuated, and then additional processing is necessarily performed. Such additional processing reduces the throughput.

[0008] The invention was created with regard to the tasks at hand, and its aim is to provide a machining technology to obtain a desired machining content while preventing a reduction in throughput. Solution to the task

[0009] To solve the aforementioned problems, an ion milling device comprising the features of claim 1 and an ion milling method comprising the features of claim 12 are available. Advantageous embodiments of the invention are the subject of the dependent claims. Advantages of the invention

[0010] According to the configuration above, it is possible to improve throughput. Brief description of the drawing Fig. Figure 1 is a diagram showing a first configuration example of an ion milling device according to the embodiment. Fig. Figure 2 is a diagram showing an embodiment of a main body of a sample mask unit 21. Fig. Figure 3 shows another embodiment of the sample mask unit 21. Fig. Figure 4 is a diagram illustrating a method for the parallel arrangement of a sample cross-section and a mask. Fig. Figure 5 is a diagram showing the configuration of a sample table sampling mechanism 60. Fig. Figure 6 is a diagram showing an embodiment of a light microscope 40 used to observe a screen position ratio between a mask 2 and a sample 3. Fig. Figure 7 is a diagram showing a state in which a sample mask unit micro-motion mechanism 4 equipped with the sample mask unit 21 is mounted on a mounting base 42. Fig. Figure 8 is a diagram describing a method for aligning the center of an ion beam onto a section of the sample 3, in which cross-sectional polishing is to be carried out. Fig. Figure 9 is a diagram describing a process for high-gloss polishing of a cross-section of sample 3 using an ion beam. Fig. Figure 10 is a diagram showing a second embodiment of the ion milling device, which differs from the configuration of the first configuration example and is capable of performing cross-section milling and face milling. Fig. Figure 11 is a diagram showing a configuration example of the sample mask unit micromotion mechanism 4, in which the in the Fig. The ion milling device shown in Figure 10 is mounted with the sample mask unit 21 installed. Fig. Figure 12 is a diagram describing a rotary mechanism provided in a sample unit base 5 which rotates a mask unit attachment 52. Fig. Figure 13 shows the rotary mechanism that rotates the mask unit mounting 52 by rotating a shaft coupling 53. Fig. Figure 14 shows a state in which the sample mask unit micro-motion mechanism 4 is installed in the light microscope 40 to set a processing position. Fig. Figure 15 is a diagram that represents a configuration example for a rotational tilting mechanism, and in particular a diagram that shows a configuration of section A surrounded by a dashed line of Fig. 12, represents. Fig. Figure 16 is a diagram showing a mechanism for rotating a rotating element 9 through the shaft coupling. Fig. Figure 17 is a diagram showing a configuration example of a sliding milling holder (sliding motion mechanism) 70 that moves the sample mask unit micro-motion mechanism 4 in the X-axis direction. Fig. Figure 18 is a diagram showing a connection relationship between the devices when a machining position of the ion milling is set. Fig. Figure 19 is a flowchart describing a procedure for setting the machining position. Fig. Figure 20 is a diagram showing a design example for buttons for setting a target position in a control box 80. Fig. Figure 21 is a diagram showing a first specific example of a method for setting the machining area in wide-area milling. Fig. Figure 22 is a diagram showing a second specific example of the procedure for setting the machining area in wide-area milling. Fig. Figure 23 is a diagram showing an example editing screen for setting a machining area in wide-area milling. Fig. Figure 24 is a diagram describing a machining process of sample 3 by wide-area milling. Fig. Figure 25 is a diagram illustrating the range of a sliding process and an oscillating tilting process in a case where the sliding motion mechanism (the sliding milling holder 70) is installed below the rotating body 9. Fig. Figure 26 is a diagram showing a state in which the sample mask unit 21 rotates and slides when the sliding motion mechanism (the sliding milling holder 70) is mounted under the rotating body 9. Fig. Figure 27 is a diagram illustrating an area of ​​the sliding process and the pendulum tilting process in a case where the sliding motion mechanism (the sliding milling holder 70) is mounted on the rotating body 9. Fig. Figure 28 is a diagram showing a specific example of the machining area setting procedure for a multi-point milling machine. Fig. Figure 29 is a diagram describing a first machining operation of sample 3 by multi-point milling. Fig. Figure 30 is a diagram describing a second machining operation to suppress repositioning caused by multi-point milling. Fig. Figure 31 is a diagram illustrating an application of wide-area milling. Fig. Figure 32 is a diagram describing a method for fixing a large number of samples of different thicknesses. Fig. Figure 33 is a diagram representing a state in which a large number of samples of different thicknesses are arranged and fixed to a mask. Fig. Figure 34 is a diagram illustrating a condition in which a sample of varying thickness is processed and moved to an observation device for observation. Fig. Figure 35 is a diagram illustrating the connection relationship between the devices when the machining position of the ion milling is set according to a modification. Fig. Figure 36 is a flowchart describing a procedure for adjusting the machining position according to the modification. Description of the embodiments

[0011] Typically, when processing is required across a width (observation width) greater than the ion beam width and involves a large number of processing points, the sample chamber is opened to the air, the processing position is changed, the sample chamber is evacuated and cleaned, and then the additional processing is performed. Such additional processing reduces the throughput. Furthermore, it is highly likely that repositioning within a processing area will occur the first time.

[0012] According to one embodiment of the invention, the following features are implemented. Specifically, repositioning caused by ion milling is significantly suppressed with improved throughput, a desired width (greater than the ion beam width) of the machining area is generated on the sample, and / or multiple machining points (machining locations) are created on the sample. The present description includes at least one mechanism and one machining method in which a desired width of the machining area is generated and multiple machining points are created in a single machining operation.

[0013] The following describes embodiments of the invention with reference to the drawings. In this embodiment, a description is given of an ion milling device in which an ion source for emitting an argon ion beam is mounted, but the ion beam is not limited to argon ion beams and various ion beams can be used. <Ausführungsbeispiel einer Ionenfräsvorrichtung> (i) First embodiment of the device

[0014] Fig. Figure 1 is a diagram showing a first embodiment of an ion milling device 100. The ion milling device 100 is made of Fig. 1 comprises a vacuum chamber 15, an ion source 1 attached to the upper surface of the vacuum chamber, a sample stage 8 provided on the front surface of the vacuum chamber 15, a sample unit base 5 extending from the sample stage 8, a sample mask unit micromotion mechanism 4 arranged on the sample unit base 5, a sample mask unit 21 arranged on the sample mask unit micromotion mechanism 4, an evacuation system 6, and a linear guide 11 provided on the front surface of the vacuum chamber 15. A sample 3 and a mask 2 are placed on the sample mask.

[0015] The sample mask unit micromotion mechanism 4 is mounted in the sample unit base 5. During assembly, the lower surface of the sample mask unit micromotion mechanism 4 (a surface opposite the mask surface where the ion beam is emitted) and the upper surface of the sample unit base 5 come into contact and are secured with a screw. The sample unit base 5 is configured to rotate and tilt at any angle to an optical axis of the ion beam. The direction and angle of tilt are controlled by the sample stage 8. The sample 3, positioned on the sample mask unit micromotion mechanism 4, can be adjusted to a predetermined angle to the optical axis of the ion beam by rotating and tilting the sample stage 8.Furthermore, a rotational tilting wave of the sample stage 8 and the upper surface of the sample (the lower surface of the mask) are aligned, efficiently producing a smooth processing surface. Additionally, the sample mask unit micro-motion mechanism 4 is configured to move forward, backward, right, and left in a vertical direction with respect to the optical axis of the ion beam (i.e., an X and a Y direction).

[0016] The sample unit base 5 is positioned by the sample table 8 (rotary mechanism), which is mounted on a flange 10 that also forms part of the wall of the vacuum chamber 15. When the flange 10 is pulled out along the linear guide 11 to open the vacuum chamber 15 to the air, the sample unit base 5 is pulled out to the outside of the vacuum chamber 15. In this way, a sample table removal mechanism is configured.

[0017] Fig. Figure 2 is a diagram showing an embodiment of a main body of the sample mask unit 21. Fig. 2(a) is a top view and Fig. 2(b) a side view. In this embodiment, an integrated embodiment comprising at least one sample holder 23 and its rotation mechanism, as well as the mask 2 and its fine adjustment mechanism, is referred to as the sample mask unit (main body) 21. Fig. Figure 2 provides a sample holder rotating ring 22 and a sample holder rotating screw 28 as a rotating mechanism for the sample holder 23. The sample holder 23, perpendicular to the optical axis of the ion beam, can be rotated by turning the sample holder rotating screw 28. Additionally, the sample holder rotating ring 22 can be rotated by turning the sample holder rotating screw 28 and returns to its original position by a spring force from a counter-rotating spring 29.

[0018] The sample mask unit 21 includes a mechanism for fine-tuning the position and rotation angle of the mask and is designed to be attached and detached relative to the sample mask unit micro-motion mechanism 4. In this embodiment, the sample mask unit 21 and the sample mask unit micro-motion mechanism 4 are divided into two components but can be configured as a single component (in this embodiment, the description of the sample mask unit and the sample mask unit micro-motion mechanism are given separately for clarity).

[0019] The mask 2 is attached to a mask holder 25 by a mask fastening screw 27. The mask holder 25 moves along a linear guide 24 by actuating a mask fine-adjustment mechanism (i.e., a mask positioning unit) 26, thereby fine-tuning the positions of the sample 3 and the mask 2. The sample holder 23 is inserted into the sample holder rotating ring 22 from below and secured. The sample 3 is applied to the sample holder 23 and fixed in place (e.g., with carbon paste, white wax, double-sided adhesive tape, etc.). The vertical position of the sample holder 23 is set via a sample holder position control 30, and the sample holder 23 is firmly connected to the mask 2.

[0020] Fig. Figure 3 is a diagram showing another embodiment of the sample mask unit 21. In this embodiment, a sample holder metal bracket 35 is used to suppress the sample holder 23, and the other configurations are essentially identical to those of the one in Figure 3. Fig. 2 illustrated embodiment. Fig. Figure 3(a) shows a state in which the sample holder 23 fixed with the sample 3 is mounted in the sample mask 21. Fig. Figure 3(b) shows a state in which the sample holder 23 fixed with the sample 3 is removed from the sample mask 21.

[0021] Fig. Figure 4 is a diagram describing a method for aligning the sample cross-section and the mask in parallel. The sample holder adjustment screw 28 is turned to set the position in the X1 direction, and fine adjustment is made under the microscope so that the cross-section of the sample 3 and a ridge line of the mask 2 are aligned parallel as described below. At this point, the mask adjustment mechanism 26 is turned so that the cross-section of the sample 3 protrudes slightly from the mask (for example, approximately 50 µm).

[0022] Fig. Figure 5 is a diagram showing the configuration of a sample table removal mechanism 60. The sample table removal mechanism 60 consists of the linear guide 11 and the flange 10 attached to the linear guide. The sample unit base 5, attached to the flange 10, is pulled out of the vacuum chamber 15 along the linear guide 11. During this process, the sample mask unit micro-movement mechanism 4, on which the sample mask 21 (i.e., the mask 2), the sample holder 23, and the sample 3 are installed, is integrally pulled out of the vacuum chamber 15 on the sample unit base 5.

[0023] In this embodiment, the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is installed, is configured to be detachably attached to the sample unit base 5. Therefore, when the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is installed, is pulled out towards the outside of the vacuum chamber 15, the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is installed, is detachable from the sample unit base 5 (removable ready state of the sample mask unit 21).

[0024] Fig. Figure 5 is a diagram showing a state in which the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is installed, is detached in a removable state. Detachment can be performed manually or with a suitable tool.

[0025] Fig. Figure 6 is a diagram showing an embodiment of a light microscope 40 in which a shielding position ratio between the mask 2 and the sample 3 is observed. As in Fig. As shown in Figure 6, the sample mask unit micromotion mechanism is separate from the vacuum chamber 15 and can be positioned at any desired location. The light microscope 40 then includes a proven magnifying lens 12 and a magnifying lens micromotion mechanism 13. Furthermore, the light microscope 40 includes a mounting base 42 for receiving the removed sample mask unit micromotion mechanism 4, on which the sample mask unit 21 rests on an observation platform 41. Subsequently, the sample mask unit micromotion mechanism 4, on which the installed sample mask unit 21 is mounted, is installed on the mounting base 42 at reproducible positions, which are set by positioning shafts and bores.

[0026] Fig. Figure 7 is a diagram showing a state in which the sample mask unit micro-movement mechanism 4, on which the installed sample mask 21 is mounted, is attached to the mounting base 42. Since the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is mounted, is attached to the mounting base 42, a section of the sample for which cross-sectional polishing is to be performed is thus aligned with the center (“+” in Fig. 8) of the ion beam by a with Fig. 8. Procedure to be described was compared.

[0027] Fig. Figure 8 is a diagram describing a procedure for aligning a section of sample 3, where a cross-section is to be polished with the center of the ion beam. Photosensitive paper or copper foil is attached to the sample holder 23, and a mark generated by the emission of the ion beam (i.e., the center of the ion beam) and the center of the magnifying lens are aligned by driving X2 and Y2 via the magnifying lens micromotion mechanism 13. The center of the ion beam and the center of the light microscope thus correspond one-to-one. The position adjustment is further performed during a cleaning process. Then, the photosensitive paper or copper foil is removed from the sample holder 23, and the sample mask unit micromotion mechanism 4, on which the installed sample mask 21 is mounted, is inserted into the mounting base 42 after the sample 3 has been assembled.The position of the sample mask unit micro-movement mechanism 4 is adjusted in the X3 and Y3 directions to the section where the cross-section is polished with the center of the lens. Therefore, it is possible to compare the center of the ion beam with the section where the cross-section is polished. Thus, when adjusting the shielding position between mask 2 and sample 3, the sample mask unit micro-movement mechanism 4, on which the sample mask 21 is installed, is removed from the sample unit base 5 and attached to the mounting base 42 of the light microscope 40. The shielding position ratio of mask 2 to sample 3 is adjusted via the mask position adjustment unit (mask fine-adjustment mechanism).

[0028] Fig. Figure 9 is a diagram describing a process for high-gloss polishing of the cross-section of sample 3 using an ion beam. When the argon ion beam is emitted, the sample 3 not covered by the mask 2 can be removed in the depth direction along the mask 2 and the surface of the cross-section of sample 3 can be high-gloss polished.

[0029] In this way, the sample mask unit micro-movement mechanism 4, on which the installed sample mask unit 21 is mounted, including the mask 2, whose shielding position ratio is set with respect to the sample at the time of ion milling, is returned to the sample base 5 and mounted there.

[0030] As described above, the ion milling process is configured such that, at the time of setting the shielding position ratio between mask 2 and sample 3, the sample mask unit micro-movement mechanism 4, on which the installed sample mask unit 21 is mounted, is removed from the sample unit base 5 and attached to the mounting base 42 of the light microscope 40, and the shielding position ratios with respect to sample 3 of the mask are set. Furthermore, at the time of ion milling, the sample mask unit micro-movement mechanism 4, on which the installed sample mask unit 21 is mounted, including mask 2, whose shielding position ratio to the sample is set, is returned to the vacuum chamber 15 and mounted on the sample unit base 5. (ii) Second embodiment of the device

[0031] Fig. Figure 10 is a diagram showing a second embodiment of the ion milling device 100, which differs from the configuration of the first embodiment and is capable of performing cross-section milling and face milling.

[0032] The ion milling device 100 comprises the vacuum chamber 15, a machining observation window 7 provided in the upper surface of the vacuum chamber 15, the ion source 1 provided in the left side face (or possibly in the right side face) of the vacuum chamber 15, the flange 10 provided in the side face different from the side face on which the ion source 1 is provided, the sample stage 8 provided on the flange 10, the sample unit base 5 extending from the sample stage 8, the sample unit micro-motion mechanism 4, and the sample mask unit 21 mounted on the sample unit base 5, the sample stage 8 provided on the front of the vacuum chamber 15, a closure 101 provided between the sample and the machining observation window 7, and the evacuation system 6. The sample mask unit 21 contains the mask 2, and the sample 3 is placed therein.

[0033] The shutter 101 is installed such that no sputtered particles can deposit on the machining observation window 7. The vacuum chamber 15 is in a box shape or similar form, creating a space for a normal vacuum atmosphere. The machining observation window 7 is located on the top of the box (in a direction opposite to the direction of the gravitational field under a gravitational environment). The ion source 1 is located in a side wall of the box (the surface adjacent to the top surface of the box in a direction perpendicular to the direction of gravity). In other words, the machining observation window 7 is located in the wall surface of the vacuum chamber. Furthermore, the light microscope (including its observation window) or an electron microscope can be installed in the opening for the machining observation window in addition to the vacuum-tight window.

[0034] Fig. Figure 11(a) is a diagram showing an embodiment of the sample mask unit micromotion mechanism 4 on which the installed sample mask unit 21 is mounted, as shown in the Fig. The ion milling device shown in Figure 10 is mounted. The basic configurations are the same as in Figure 10. Fig. 2 and Fig. 3, except that a mask unit attachment 52 is provided in the sample mask unit micro-movement mechanism 4 on which the mask unit 21 is mounted. Furthermore, the attachment method of the sample holder 23 differs from the design in Fig. 2. In other words, a key section 231 of the sample holder 23 is inserted from the underside into the sample holder rotating ring 22 (a shape obtained by halving the ring) and fixed with a screw (see Fig. 11(b)). With such a fastening method, the machining surface of sample 3 can be observed from the machining observation window 7.

[0035] Fig. Figure 12 is a diagram describing the rotation mechanism provided in the sample unit base 5 for rotating the mask unit mounting 52. The sample unit base 5 includes a rotation element 9 into which a sample holding element (an element for holding the sample including the sample mask unit micro-motion mechanism 4) can be inserted. The rotation element 9 serves as a bearing surface for the sample holding element. The sample unit base 5 consists of the rotation element 9, a gear 50, and a bearing 51. The sample mask unit micro-motion mechanism 4 is brought into contact with a mounting surface (rear side) of the sample mask unit micro-motion mechanism 4 and the top side of the rotation element 9 of the sample unit base 5 and is secured by a screw from the mask unit mounting 52.The sample unit base 5 does not rotate or tilt, but is configured such that, by means of the rotating element 9 mounted in the sample unit base 5, it forms any desired angle with the optical axis of the ion beam emitted in the side-surface direction of the vacuum chamber 15. The tilting direction and angle of rotation are controlled by the sample stage 8.

[0036] This includes, as a method for rotating and tilting the rotation element 9 of the sample unit base 5, a method for rotating the sample table 8 as in Fig. 12 shown and a method for rotating a shaft coupling 53 as in Fig. Figure 13 shows that both methods can be used. The sample 3, arranged on the sample mask unit micromotion mechanism 4, can be positioned at a predetermined angle to the optical axis of the ion beam by rotating and tilting the rotation element 9 of the sample unit base 5. Furthermore, the rotation axis of the rotation element 9 of the sample unit base 5 and the position of the upper surface (the lower surface of the mask) of the sample are aligned to efficiently prepare a smooth processing surface.

[0037] Fig. Figure 14 is a diagram showing a state in which the sample mask unit micro-motion mechanism 4 is installed on the light microscope 40 for adjusting the processing position. Furthermore, the mounting of the device and other components on the light microscope 40 must not be done via the mask unit mounting 52, but rather via the lower surface of the sample mask unit micro-motion mechanism 4. Fig. 14 differs from Fig. 6 by mounting the magnifying micro-movement mechanism 13, which adjusts the beam center and the magnifying lens center, on the mounting base 42. The magnifying micro-movement mechanism 13 can be described using this example and the example in Fig. 6 can be configured. Other procedures are the same as in the example of Fig. 6.

[0038] Fig. Figure 15 is a diagram illustrating an embodiment of a rotational tilting mechanism, namely a diagram showing a configuration of section A, which is indicated by a dashed line. Fig. 12 is surrounded. The ion milling device according to the second embodiment ( Fig. 10) has the function of placing a sample in the direction of the Fig. The rotational tilting mechanism shown in 15 is designed to rotate, and a tilting mechanism is provided which has a rotational tilt wave in a vertical direction to an ion beam axis. The rotational tilting mechanism is configured such that it rotates the rotating element 9 (not shown in the diagram). Fig. (as shown in Figure 15) with a rotational force from a motor 55 through a shaft and the gearbox 50. With this configuration, it is possible to create an eccentric mechanism that displaces the ion beam and rotation axis of the sample mask unit micromotion mechanism 4 at a tilt angle of 90 degrees. Furthermore, as shown in Figure 16, the shaft coupling can be used. However, when using the shaft coupling, the shaft coupling is configured as shown in Fig. 16 is shown, built into a rotation tilting unit and the eccentric mechanism (moves in the Y direction) is preferably located in the lower part of the rotation element 9 of the sample unit base 5.

[0039] As in Fig. 15 and Fig. As shown in Figure 16, the ion milling device can incorporate a function of sample rotation. The angle of incidence of the ion beam and an eccentric amount are arbitrarily adjustable, allowing for both surface milling (smoothing a surface when the tilt angle of the sample table is 90 degrees perpendicular to the ion beam axis) and cross-sectional milling (milling the sample through a mask to smooth the surface). < Sliding motion mechanism for realizing wide-area and multi-point milling>

[0040] The following describes a sliding motion mechanism for realizing wide-area milling and multi-point milling in the ion milling device 100 according to the configuration of the Fig. 1 and Fig. 10 (including one of the Fig. 12, Fig. 13, Fig. 15 and Fig. 16) given. Wide-area milling means machining performed on an area of ​​the sample that is wider than the ion beam width. Furthermore, multi-point milling means machining performed at several locations on the sample (in particular, automated machining at several locations in this embodiment).

[0041] The ion milling device 100, which enables wide-area milling and multi-point milling, includes a sliding mechanism movable (displaceable) in the vertical direction to the optical axis of the ion beam, which necessarily displaces the sample mask unit 21 in the vacuum chamber. A sliding direction and the edge of the mask 2 are preferably arranged parallel to each other. Furthermore, the position of the rotational tilting shaft does not move even when the sliding movement is performed (the reason for this will be explained below). Fig. 25, Fig. 26 to Fig. 27). Such an ion milling device can be realized by the following configuration. Furthermore, the description of the embodiment is given for a case in which a motor (a drive source in the X-axis direction) is installed in the vacuum chamber (at the time of the motor's drive). However, the motor can also be installed outside the chamber.

[0042] For performing wide-area milling and multi-point milling, the vacuum chamber 15 is configured with an additional configuration of Fig. 10 of the sample mask unit micro-movement mechanism 4 preferably in the X-axis direction (see Fig. 10) driven. In particular, it is possible to drive the sample mask unit micro-movement mechanism 4 in the X-direction in the vacuum chamber 15 with a motor as the drive source of the X-direction.

[0043] Fig. Figure 17 is a diagram showing an embodiment of a sliding milling mount (sliding motion mechanism) 70 for moving the sample mask unit micro-motion mechanism 4 in the X-axis direction. The sliding milling mount 70 incorporates an X-gearbox 71 in a drive axis of the sample mask unit micro-motion mechanism 4 in the X-axis direction. Additionally, a motor unit 72 is installed on the lower surface of the sample mask unit micro-motion mechanism 4. The motor unit 72 consists of a motor, an M-gearbox 73, and a cover. The M-gearbox 73 is mounted in the rotational axis of the motor (the M-gearbox 73 is not intended to be directly connected to the rotational axis of the motor). The M-gearbox is a final stage that engages with the X-gearbox 71 via several gear stages. The sample mask unit micro-motion mechanism 4 and the motor unit 72 can be integrated or configured separately.The description herein refers to the separate type. With the separate version, normal cross-sectional milling (manual setting procedure) is also possible after removing the motor unit 72.

[0044] The sample mask unit micro-motion mechanism 4 and the motor unit 72 are assembled by a shaft and a bore for positioning, maintaining a reproducible positional relationship, and fixed by a screw. In this configuration, the X-gear 71 of the sample mask unit micro-motion mechanism 4 and the M-gear 73 of the motor unit 72 come into contact with each other. When the motor starts to rotate, the X-gear 71 therefore rotates in the X-axis direction via the M-gear 73 and a drive shaft of the sample mask unit micro-motion mechanism 4. The sample 3 (the sample 3 attached to the sample mask unit 21) therefore begins to move (slide) in the X-axis direction. With this configuration, it is possible to realize the ion milling device in which the rotating tilting shaft does not move during sliding. Furthermore, the sliding milling holder 70 is arranged on the upper part of the rotating body 9 in the ion milling device, as shown in the Fig. 10 and Fig. Figure 12 is shown. Additionally, the sliding milling holder 70 is mounted on the sample unit base 5 in the figure shown. Fig. 1 ion milling device shown. <Processing content from target position setting to start of processing>

[0045] Fig. Figure 18 is a diagram showing a relationship between the devices when a machining position of the ion milling device is set. Fig. Figure 19 is a flowchart describing a procedure for setting the machining position. The description refers to the Fig. 18 and Fig. 19 relates to a method for performing ion milling with the sliding milling holder 70, in which the sample mask unit micro-movement mechanism 4 with the installed sample mask unit 21 and the motor unit 72 are mounted (a method in a state in which the sample 3 is arranged on the sample mask unit 21). Furthermore, the motor is supplied with power via a motor cable (out) 74 and the motor cable (in) 75 from a control unit 103 of the main body of the ion milling device 100. (i) Step 1901

[0046] A user (operator) mounts the sliding milling holder 70 to the mounting base 42 of the light microscope 40 (see Fig. 14) and connects the motor cable (out) 74 from the control unit 103 via a light microscope control 102 to the motor unit of the sliding milling holder 70. (ii) Step 1902

[0047] When the process for setting the machining position begins after step 1901, the control unit 103 performs an initialization of the sliding milling holder 70. Specifically, the sliding milling holder 70, mounted in the light microscope 40, is moved to a reference position (e.g., an origin point). (iii) Step 1903

[0048] After initialization is complete, the user presses an arrow key on an operating unit (e.g., a touch panel) 81 or on a control box (e.g., installed remotely from the control unit 103 and near the light microscope 40) 80, and moves the sliding milling holder 70, equipped with the sample 3, into a target position (machining position) (X-axis direction: X3 of Fig. 8) and presses a SET button located on the control box 80. Movement in the X-axis direction is achieved by the motor drive. Furthermore, the settings are the same as in [reference to relevant section], except for the X-axis movement. Fig. As described in section 8, during the X-axis movement, the control unit 103 acquires information about the target position (information about the number of pulses corresponding to the number of presses of the arrow key to move the sliding milling holder 70 to the target position). The numerical value of the target position (e.g., distance) can be set. In this case, the set numerical value (distance) is converted into the number of pulses. (iv) Step 1904

[0049] The control unit 103 acquires information about the target position acquired in step 1903 (a distance from the origin position: the number of pulses generated when approaching the target position) and stores the information in a memory (not shown) in the control unit 103. (v) Step 1905

[0050] Once the target position has been set using the light microscope 40, the user removes the motor cable (out) 74, which is connected to the sliding milling holder 70, from the motor unit 72 and the sliding milling holder 70 from the mounting base 42 of the light microscope 40. The control unit 103 detects that the motor cable (out) 74 has been removed. (vi) Step 1906

[0051] The user then mounts the sliding milling holder 70, taken from the light microscope 40, onto the rotating element 9 of the vacuum chamber 15 (in the case of the ion milling device). Fig. 12) or on the sample unit basis 5 (in the case of the ion milling device made of Fig. 1) The user then connects the motor cable (in) 75, which extends from the control unit 103 to the motor unit 72 of the sliding milling holder 70, via a vacuum chamber drive 104. The control unit 103 detects that the motor unit 72 of the sliding milling holder 70 is connected to the motor cable (in) 75.

[0052] The user then closes the sample table removal mechanism 60 and evacuates the vacuum chamber 15 using the evacuation system 6 to establish a vacuum condition. (vii) Step 1907

[0053] The control unit 103 performs the initialization of the sliding milling holder 70. Specifically, a reference position (e.g., the starting point) of the sliding milling holder 70, which is mounted in the ion milling device, is moved.

[0054] The user introduces argon gas between the electrodes of ion source 1 and applies a high voltage to initiate the discharge. In this state, an accelerating voltage is applied, and the ion beam is emitted to begin the processing. (viii) Step 1908

[0055] The control unit 103 reads the information about the target position stored in the memory, controls the vacuum chamber drive 104 so that the processing position on the sample is set to the target position and drives the motor of the motor unit 72.

[0056] In the ion milling device, the rotating element 9 (in the case of the exemplary embodiment for the ion milling device made of Fig. 10) or the sample table 8 (in the case of the exemplary embodiment for the ion milling device made of Fig. 1) tilted in any opposite direction at an arbitrary angle and guides a sliding stroke drive of the sliding milling holder 70 (see Fig. 24) to obtain a wide machining area (one section of the sliding stroke drive extends to the position set under the light microscope 40). Furthermore, the sliding stroke drive can be executed continuously or intermittently. As an example of an intermittent drive, a displacement of 0.1 mm after 10 seconds of machining → ... → 0.1 mm sliding after 10 seconds of machining can be considered, and a holding time (machining time) and a sliding distance can be entered. <Processing content from setting the processing position to the start of processing (modification)>

[0057] Fig. Figure 35 is a diagram illustrating a relationship between the devices when the machining position of the ion milling device is adjusted according to a modification. Fig. Figure 36 is a flowchart describing a procedure for adjusting the machining position according to the modification. The description refers to the Fig. 35 and Fig. 36 a method for operating the ion milling (a process from a state in which the sample 3 is arranged on the sample mask unit 21) using the sample mask unit micro-motion mechanism 4 on which the sample mask unit 21 is installed.

[0058] In Fig. In the first version, the sliding milling mount 70 with the motor unit 72 is moved between the vacuum chamber 15 and the light microscope 40 (using the same motor). However, in the modified version, the drive unit (including the motor) is located in each of the vacuum chambers 15 and 40. Therefore, it is not necessary to move the sliding milling mount 70 itself between the vacuum chamber 15 and the light microscope 40. Consequently, in this case, the sample mask unit micro-movement mechanism 4, on which the sample mask 21 is installed, can be moved back and forth between the vacuum chamber 15 and the light microscope 40; the insertion and retraction of the cable is no longer required. In the version described in the first version, the drive unit (including the motor) is located in each of the vacuum chambers 15 and 40. Fig. In the 36 procedures shown for setting the machining position, steps 3601, 3602 and 3603 are used instead of steps 1901, 1905 and 1906. Fig. 19. Only steps 3601 to 3603, which differ from [the previous step], are described below. Fig. 19 differ. (i) Step 3601

[0059] The user (operator) mounts the sample mask unit micro-motion mechanism 4 into the light microscope 40, which contains the drive unit. The motor cable (out) 74, which extends from the control unit 103 through the light microscope control unit 102, is connected to a motor unit 3502 on one side near the light microscope 40. In contrast to step 1901 in Fig. 19 (only mounted on the light microscope 40 of the sample mask unit micro-movement mechanism 4) therefore eliminates the need to connect the motor cable (out). (ii) Step 3602

[0060] Once the target position has been set using the light microscope 40, the user removes the sample mask unit micro-motion mechanism 4, which contains the drive unit, from the light microscope 40. At this point, the control unit 103 recognizes that the sample mask unit micro-motion mechanism 4 is being removed from the light microscope 40 and completes the positioning within the light microscope 40. (vi) Step 3603

[0061] Once positioning in the light microscope 40 is complete, the user mounts the sample mask unit micro-motion mechanism 4, removed from the light microscope 40, into the vacuum chamber 15, which contains the drive unit. The motor cable 75, extending from the control unit 103 through the vacuum chamber drive 104, is connected to a motor unit 3501 on one side near the vacuum chamber 15. In contrast to step 1906 in Fig. 19 (mounted only on the vacuum chamber 15 of the sample mask unit micro-motion mechanism 4) therefore eliminates the need to connect the motor cable (in). At this point, the control unit 103 recognizes that the sample mask unit micro-motion mechanism 4 is mounted to the drive of the vacuum chamber 15. The user then closes the sample table removal mechanism 60 and evacuates the vacuum chamber 15 using the evacuation system 6 to establish a vacuum. <Spezifisches Bearbeitungsbereichs-Einstellverfahren beim Weitbereichsfräsen>

[0062] This section describes in more detail how to set a machining area in a case where wide-area milling is performed. Fig. Figure 20 is a diagram showing a design example for buttons for setting the target position in the control box 80. Fig. 21 and Fig. Figure 22 are diagrams that provide a concrete example of the machining area setting for wide-area milling.

[0063] In a case where wide-area milling is performed, the user moves the sample 3 (the sample mask unit 21) using the control box 80 (or an operating panel 80) (pressing an L button 76 (left) and an R button 77 (right) in Fig. 20), while monitoring (or observing in a timely manner) the light microscope 40 and setting both ends E1 and E2 of a region (a processing region 2101) which, as in Fig. 21 is displayed and edited (pressing a SET key 78 in Fig. 20).

[0064] In a method for setting a machining area for wide-area milling, the two ends of a machined area can be, as in Fig. 21 shown, will be set. As in Fig. As shown in Figure 22, a center point C1 of the area to be machined can be set (the machining area 2101). After setting, a machining area can be set by entering numerical values ​​(e.g., 2 mm from the center) into the control unit 81 (or the control box 80) (in this case, in addition to the buttons of Fig. 20 added a function for entering numerical values ​​into an editing area) to edit the setting area (sliding stroke drive) (see Fig. 24). The machining area of ​​wide-area milling can be selected by any position of the two ends of the machining area and the central position of the machining area, as in Fig. Figure 23 is shown to improve usability. The machining process (milling) is the same in every case, whether the machining area is set via "the positions of both ends" or via "the center position".

[0065] Furthermore, as in Fig. As shown in Figure 20, the control box 80 contains a multi-point milling selection button and a wide-range milling selection button, where one or both can be selected. <Bearbeitungsverfahren im Weitbereichsfräsen>

[0066] Fig. Figure 24 is a diagram describing a machining process for sample 3 in wide-area milling.

[0067] In wide-area milling, an absolute emission position of an ion beam 2401 is set, and the sample 3 slides back and forth through the sliding motion mechanism (the sliding milling holder 70) in a sliding area 2403, thus preparing a wide machining surface 2402 (see Fig. 24(a)).

[0068] Therefore, in a state where the ion beam 2401 is emitted, the sliding motion mechanism moves the sample 3 from the center to the right end of the processing surface 2402 (see Fig. 24(b)), and moves the sample from the right end to the left end of the processing surface 2402. When moving the sample 3 from the right to the left end of the processing surface 2402, the ion beam 2401 is emitted to the sample 3.

[0069] The sliding movement mechanism then pushes the sample 3 from the left to the right end of the machining surface 2402 (see Fig. 24(c)). When the sample 3 is moved from the left to the right end of the processing surface 2402, the ion beam 2401 is emitted to the sample 3.

[0070] The above sliding process is repeated until the end of the machining process (see Fig. 24(d) and Fig. 24(c)). <Grund für das Einsetzen des Gleitbewegungsmechanismus bei dem Rotationselement>

[0071] According to the configuration of the device described above, the sliding movement mechanisms (the sliding milling holder 70) are provided on the rotating element 9 (the sample table 8 in a case where the configuration of the ion milling device consists of Fig. 1 is used). In other words, the processing position on the oscillating tilt axis and the surface of the sample are always the same. Therefore, even if sample 3 is made to slide during back-and-forth movement and tilting, there are hardly any disturbances in the units of the mechanism (ion source 1, ion beam probe, etc.) in the sample space. The limitation of the sliding range is correspondingly smaller.

[0072] Fig. Figure 25 is a diagram representing a range of an oscillating tilting process of the specimen during normal cross-sectional milling (a configuration in which the sliding motion mechanism is not provided). Fig. Figure 26 is a diagram illustrating an area of ​​the sliding process and the pendulum tilting process in a case where the sliding motion mechanism (the sliding milling holder 70) is installed below the rotating element 9. Fig. Figure 27 is a diagram illustrating a range of the sliding process and the pendulum tilting process in a case where the sliding motion mechanism (the sliding milling holder 70) is mounted on the rotating element 9.

[0073] In normal cross-sectional milling ( Fig. 25) The sample mask unit 21 does not shift, so that the position of a rotational tilt wave (a rotational wave of the rotating element 9) 2502 is fixed and an oscillating tilt operation 2503 is performed within the defined range. Therefore, the sample mask unit 21, which performs the tilt operation 2503, does not receive any disturbances from an ion beam probe 2501 and the ion source 1.

[0074] On the other hand, as in Fig. As shown in Figure 26, the position of the rotating tilting shaft 2502 also shifts when the sample mask unit 21 slides, even when the sliding motion mechanism (the sliding milling holder 70) is mounted under the rotating element 9. Additionally, the sample mask unit 21 performs the tilting operation 2503 while the rotating tilting shaft 2502 slides (one sliding direction 2601 is constant). Therefore, the sample mask unit 21 interferes with the ion beam probe 2501 and the ion source 1 depending on the position of the rotating tilting shaft 2502 (interference point 2602), so that a sufficiently large machining width cannot be achieved.

[0075] Therefore, as in Fig. As shown in Figure 27, the sliding motion mechanism (the sliding milling mount 70) is mounted on the rotating element 9. In this case, the position of the rotating tilting shaft 2502 is fixed even when the sample mask 21 slides. Therefore, the sliding direction 2701 changes depending on the tilt angle of the tilting operation 2503, but the sample mask unit 21 does not interfere with the ion beam probe 2501 and the ion source 1 during the sliding and tilting operations. This allows a large sliding width and a large machining width to be achieved during the sliding operation. When multi-point milling is performed in the configuration of Fig. When process 26 is carried out, the position of the rotational tilting shaft 2502 changes as described above when a position separated from the ion beam axis is machined. Therefore, the problem is that a milling profile is not normally formed (the milling profile is asymmetrically shaped in the horizontal direction). < Specific procedure for setting the machining point in multi-point milling>

[0076] This section describes in more detail how to set up a machining point in a case where multi-point milling is performed. Fig. Figure 28 is a diagram showing a specific example of the procedure for setting the machining area in multi-point milling.

[0077] Even when multi-point milling (automatic machining at multiple points) is performed, the sample 3 (the sample mask unit 21) is moved in the control box 80 or the operating unit 81 (press L button 76 (left) and R button 77 (right)), while the light microscope 40 (or the real-time view) is monitored, similar to wide-area milling. More precisely, as in Fig. As shown in Figure 28 (for two or more machining locations), several machining positions P1 and P2 are set (press SET key 78). Additionally, when performing multi-point milling, mask 2 is also fixed so that its edge is parallel to a sliding direction.

[0078] After setting the machining position, the motor cable (out) 74 is removed from the sliding milling holder 70 and the sliding milling holder 70 is removed from the mounting base 42. The sliding milling holder 70 is then mounted in the rotating element 9 or the specimen holder 5 and the motor cable (in) 75 is connected to the sliding milling holder 70.

[0079] The sample table removal mechanism 60 is closed, and the vacuum chamber 15 is evacuated to a vacuum state by the evacuation system 6. Additionally, argon gas is injected between the electrodes of the ion source 1, a high voltage is applied, and the discharge is initiated. In this state, the accelerating voltage is applied, the ion beam is emitted, and the processing is started (the oscillating tilting process is performed simultaneously). < Process of machining by multi-point milling>

[0080] Fig. Figure 29 is a diagram describing a first machining process of sample 3 by multi-point milling. Fig. Figure 30 is a diagram describing a second machining operation to suppress repositioning by multi-point milling.

[0081] As in Fig. As shown in Figure 29 (with two machining positions), after completion of machining at a first machining position 2901 (a machining surface 2902), the sliding milling holder 70 is automatically moved into a sliding position (in the X3 direction) and into a second machining position 2904 (a sliding direction 2903), and machining begins. The above process is executed in cases where a third machining position and subsequent positions are selected. Multi-point milling (automatic machining at multiple locations) can be achieved using the above machining method.

[0082] However, in a case where the machining is carried out using the method, a repositioning 3003 can be created in the surface of a first machining surface 3001, as shown in Fig. 30(a). As a countermeasure, for example, in a case where each of the processing positions is set to 3 hours, the processing is carried out as follows: one hour of processing at the first processing position 2901 (the first processing surface 3001) (first step) → approach to the second processing position 2904 (a second processing surface 3002), one hour of processing (first step) → approach to the first processing position 2901 (the first processing surface 3001) again, one hour of processing (second step) → approach to the second processing position 2904 (second processing surface 3002), one hour of processing (second step) → approach to the first processing position 2901 (first processing surface 3001) again, one hour of processing (third step) → approach to the second processing position 2904 (second processing surface 3002) and one hour of processing (third step). The processing process will then be terminated (see Fig. 30(b)). The same procedure also applies in the cases of Fig. 30(c) and Fig. 30(d). With the processing method described above, the first processing hour is short, thus significantly reducing the amount of material to be repositioned within the processing area. Additionally, the repositioning created within the processing area is removed during the next processing cycle, resulting in a good cross-section. When configuring the processing method, the processing time for a location can be divided into multiple periods, or partial hours can be entered.

[0083] Additionally, an in Fig. The machining procedure shown in Figure 30(e) is applied. In other words, approximately 95% of the machining is completed at the first machining position 2901 (the first machining surface 3001) (first step). The process then moves to the second machining position 2904 (the second machining surface 3002) to complete the machining there (e.g., 3 hours of machining). After that, the process returns to the first machining position 2901 (the first machining surface 3001), and the machining there is complete. With this configuration, the machining time at the first machining position 2901 (the first machining surface 3001) can be significantly reduced.This makes it possible to largely prevent the repositioning of 3003 in the second machining position 2904 (the second machining surface 3002).

[0084] Furthermore, a processing procedure, as in Fig. Figure 30(f) is used. In other words, the machining at the first machining position 2901 (the first machining surface 3001) is completed within a certain time (e.g., 3 hours machining). The process then moves to the second machining position 2904 (the second machining surface 3002) and completes it within a certain time (e.g., 3 hours machining). Afterward, the process returns to the first machining position 2901 (the first machining surface 3001), and a finishing operation is performed at the first machining position 2901 (the first machining surface 3001) with an acceleration stress that is lower than that at the time of machining. The process then moves back to the second machining position 2904 (the second machining surface 3002), and the finishing operation is performed in the same way.With such a final finishing operation, the repositioning can be removed, even if the repositioning is created at a machining position, and a desired machining operation can be achieved.

[0085] Furthermore, when multi-point milling as described above (during the Fig. 30(b) to 30(f)) the respective processing positions as well as the number of processing operations and the processing times at each processing station are set.

[0086] To summarize the multi-point milling described above, several machining positions and the number of milling operations in each of these positions are set, and the sample is machined at each position according to the information about each position and the number of milling operations at each position. At this point, at least one milling operation is performed alternately in at least one of the several machining positions. In other words, for example, one milling operation is performed alternately in each machining position, as shown in... Fig. Figures 30(b) to 30(f) illustrate this. Additionally, several milling operations are performed in at least one of the multiple machining positions with a time interval between them. In other words, for example, in Fig. 30(b) After a first milling operation on a first machining surface 3001, the first milling operation is carried out at a second machining position 3002 before a second milling operation is carried out. In addition, the final machining is carried out sequentially at the respective machining positions (see Fig. 30(b) to 30(d) and 30(f)).

[0087] When machining is completed at one location in the ion milling device of the related technology, it is necessary to evacuate the vacuum chamber, change the machining position, and then return the vacuum chamber to a vacuum state. In the ion milling device according to the embodiment, machining is performed automatically at several locations (e.g., 3 locations), allowing simultaneous machining at multiple points. This makes it easy to achieve an optimal machining condition for the workpiece. More precisely, multi-point milling allows the respective machining conditions (discharge voltage, acceleration voltage, current, helix angle, cooling temperature, etc.) to be adjusted at each machining position. This facilitates approaching an optimal state.For example, a sample is machined under the condition that the acceleration voltage at the first position is set to 2 kV, the acceleration voltage at the second position to 4 kV, and the acceleration voltage at the third position to 6 kV. Furthermore, by setting wide-range milling at the respective machining positions of the multi-point milling process, it is possible to utilize many applications. <Anwendungen des Weitbereichsfräsens>

[0088] Fig. Figure 31 is a diagram illustrating an application of wide-area milling. It describes a case where a machining location is not clearly defined. This machining method is effective when the machining is completed quickly.

[0089] According to the related technique, as in Fig. As shown in Figure 31(a), in a case where the position of a processing object (e.g., a defect) is unclear, a processing surface 3102 is necessarily processed by an ion beam 3101 at an approximate position. However, there is a possibility of taking too much time with such a method.

[0090] Therefore, a workpiece is selected and efficiently machined using wide-area milling. In particular, as shown in Fig. As shown in Figure 31(b), wide-area milling is performed (emitting a beam while oscillating, tilting, and driving the sample 3 to slide). When a machining object (position) 3103 is located (using a light microscope for machining observation (installed in the upper part of the machining observation window 7) or with the naked eye), the machining is stopped. Subsequently, as shown in Fig. As shown in Figure 31(c), the sample holder is moved (shifted) to align the ion beam axis with the machining position, and normal milling is performed.

[0091] The method, which combines wide-area milling to determine a machining position with normal milling at a high milling rate, can significantly reduce the machining time compared to a case where wide-area milling is carried out until the end. <Anwendung des Mehrpunktfräsens>

[0092] Fig. 32, Fig. 33 to Fig. Figure 34 are diagrams describing an application of multi-point milling. Fig. Figure 32 is a diagram describing a method for fixing a large number of samples of different thicknesses. Fig. Figure 33 is a diagram representing a state in which the multitude of samples of different thicknesses are arranged and attached to a mask. Fig. Figure 34 is a diagram showing a state in which samples of different thicknesses are processed and placed in an observation device for observation.

[0093] This describes a method for performing cross-sectional milling on a large number of samples in a single operation, as an application of multi-point milling. In normal cross-sectional milling, the sample holder 23, connected to the sample 3, is inserted into the sample mask 21. With the sample mounting method, where the sample is attached to the sample holder 23 with a different thickness, a gap forms between the (thin) sample and the mask 21, resulting in an unsmooth cross-section.

[0094] Therefore, the sample is adjusted using a projection adjustment tool 90, as in Fig. Figures 32(a) to 32(c) show the mask 2 being fixed. First, the upper surface (near an area where the ion beam exits) of the mask 2 comes into contact with a base 91 of the projection adjustment tool 90, and the mask 2 is secured with a fixing screw 92. Once the mask 2 is fixed, a contact surface is established between the mask 2 and a position adjustment base 93 parallel to the right wall of the base 91. A gap 3201 between the mask 2 and the position adjustment base 93 (along the linear guide) is set using a micrometer 94. If the gap 3201 is large, the micrometer 94 is rotated counterclockwise and pressed by a spring 95. After the mask 2 is secured to the base 91, the micrometer 94 is rotated to bring the position adjustment base 93 into contact with the mask 2. A value (initial value) of the micrometer is stored at this time.

[0095] The micrometer 94 is then rotated counterclockwise to adjust the gap 3201 between the mask 2 and the position adjustment base 93. A distance (corresponding to a projection amount to be described below) of the gap 3201 becomes a value from which the current value and the initial value of the micrometer 94 are subtracted. Therefore, the distance can be set to any desired value. After setting the distance of the gap 3201, the fixing position is determined while the sample 3 is positioned with the position adjustment base as described in Fig. As shown in Figure 32(c), the sample 3 is brought into contact with the mask 2 (the surface of sample 3, on which the ion beam is emitted, is brought into contact with the mask 2). When the sample is connected as described above, the distance of the gap 3201 corresponds to a projection 3301. Since sample 3 can be attached directly to the mask, it is possible to arrange and fix a multitude of samples with different thicknesses. The projection 3301 of sample 3 can vary, which, however, is not shown in the drawings (see Figure 32(c)). Fig. 33).

[0096] After fixing (connecting) all samples on mask 2, the fixing screw is loosened to remove mask 2, to which the sample is fixed, from the projection adjustment tool. Mask 2 is attached to the mask holder 25 (sample mask unit 21) with the mask fixing screw 27. Using the fixing method and multi-point milling (description of the X and Y adjustment described above (X3 and Y3 in Fig. 8 (here X3 corresponds to a motor drive) of the sample mask unit micromovement mechanism 4 is omitted)) the majority of samples can be processed by a single milling operation.

[0097] After the multitude of samples attached to the mask 2 have been processed, the mask 2 is removed from the ion milling device and attached to a sample arrangement base 105 of an observation device (SEM) (see Fig. 34). The sample arrangement base 105 is configured such that the mask 2 is attached to a fastening screw 106, and the mask 2 attached to the sample 3 can be easily attached to the sample arrangement base 105.

[0098] Additionally, an internally threaded screw (if an externally threaded screw 3402 is provided near a sample mounting base 107 of the observation device) 3401 is provided in the lower surface of the sample mounting base 105 and can be attached to the externally threaded screw 3402 of the sample mounting base 107 of the observation device. The mask 2, fixed to the sample 3, is therefore easy to position in the observation device and can be observed. The position of the internally threaded screw 3401 of the sample mounting base 105 is adjusted so that the machining surface is located on the central axis of the externally threaded screw 3402, making the machining surface easy to locate at the time of observation. <modifikationen>

[0099] (i) In the Fig. 1 and Fig. In the ion milling device shown in Figure 10, the sample mask unit micro-movement mechanism 4, on which the sample mask unit 21 is mounted, is detachably connected to the sample unit base 5.

[0100] However, even when the sample unit base 5 and the sample mask unit micro-movement mechanism 4, to which the sample mask unit 21 is attached, are integrated, the same machining is possible by mounting the light microscope 40 in the device. Furthermore, in this case, the motor cable (out) 74, the motor cable (in) 75, and the sliding milling holder 70 cannot be extended and retracted, but the space for adjusting the positions may be limited.

[0101] (ii) In this embodiment, the description is based on the assumption that the ion milling device and the observation device (SEM) are configured separately. However, these devices can be configured in an integrated manner. In this case, for example, a mechanism is provided that separates the sample unit base 5 and the sample mask unit 21 and switches the ion source used at the time of ion milling and an electronic spray gun at the time of observation of the processing area. Since the information about a processing location of the ion milling (position information) is stored in the control unit 103, this information can also be used in the observation device, and there are advantages that controls such as positioning can be easily performed at the time of observation. In addition, the sample is removed from the ion milling device after processing.Furthermore, the labor required for installing the observation device can be saved, thus improving the throughput from processing to observation. <schlussfolgerungen>

[0102] (i) In wide-area milling, the pendulum operation and the sliding operation are performed simultaneously during the emission of the ion beam, thus achieving a large machining width regardless of the ion beam diameter. Therefore, this is effective for samples required for a wide range of observations and analyses. Furthermore, after completion of the cross-sectional milling (the operation with pendulum tilt during ion beam emission), multi-point milling is performed to move the sample to a predetermined machining position (or positions), and cross-sectional milling can continue at that position. Therefore, machining is performed automatically at multiple positions, and it is possible to improve throughput.

[0103] The ion milling device according to the embodiment includes a sample sliding mechanism that moves the sample holder in a direction that includes a normal direction to the axis of the ion beam. Additionally, the ion milling device may include a rotary mechanism that rotates and tilts the sample holder by rotating an axis perpendicular to the sliding direction of the sample sliding mechanism. In this case, the sliding mechanism (motor drive) is preferably arranged in the upper section of the rotary mechanism (a mechanism whose pivoting tilt axis (rotation axis) remains stationary even during the sliding process), and a specific position of the rotary mechanism's rotation shaft is undesirable. Furthermore, the rotary mechanism's rotation shaft is preferably positioned along the path of the ion beam. The sliding mechanism also moves the sample along a surface perpendicular to the rotary mechanism's rotation shaft.In this configuration, the sample undergoes both the oscillating tilt process (normal cross-sectional milling) and the oscillating sliding process (a sliding process wider than the ion beam width) during the ion beam emission. This machining method achieves a desired machining width in a single pass (wide-area milling). The machining width of wide-area milling is not limited to the ion beam width, allowing a large area of ​​the machining surface (observation area) to be accessed.

[0104] Additionally, after completion of the cross-section milling, the workpiece is automatically moved (pushed) to the next machining position using the sliding motion mechanism, and the cross-section milling is performed again at the moved position. This machining process makes it possible to perform cross-section milling automatically at multiple locations (multi-point milling). Since cross-section milling at numerous locations can be performed only once, multi-point milling can improve throughput.

[0105] (ii) The ion milling device according to the embodiment comprises the ion source that emits the ion beam, the sample holder that holds the sample, the sample sliding mechanism that moves the sample holder in a direction that includes a direction normal to the axis of the ion beam, and a control unit. The control unit controls the sample sliding mechanism based on machining information input via a machining content of the sample and enables wide-area milling, which is performed on the sample over an area larger than the width of the ion beam, and / or multi-point milling, which is performed at several locations on the sample. With this configuration, it is possible to perform wide-area milling and multi-point milling automatically with one ion milling device. Furthermore, it is also possible to combine wide-area milling and multi-point milling.

[0106] (iii) The ion milling device according to the embodiment comprises a user interface unit that allows the selection of at least one of the wide-area milling operations on the sample over an area wider than the width of the ion beam, and the multi-point milling operations, which are performed at a multitude of locations on the sample, and the control unit that controls the milling operation with respect to the sample based on a selection input with respect to the user interface unit. With this configuration, the user is able to efficiently perform a desired milling operation by selecting either wide-area milling or multi-point milling, or by combining two milling operations.

[0107] Furthermore, in cases where both wide-area milling and multi-point milling are selected, the control unit manages the milling process and switches between wide-area milling and multi-point milling. This configuration allows for efficient, one-time execution of both wide-area and multi-point milling operations.

[0108] (iv) In this embodiment, the sample is first positioned on the light microscope during ion milling. The processing position and width for wide-area milling, which is performed on the sample over an area larger than the width of the ion beam, and the multiple processing positions for multi-point milling, which is performed at various points on the sample relative to the sample, are then set using the light microscope. The information on the processing position and width for wide-area milling, as well as the information on the multiple processing positions for multi-point milling, is then transmitted to the control unit, which controls the milling process. The sample is then removed from the light microscope and positioned in the ion milling device.The control system manages the milling process in the ion milling fixture based on information about the machining position and width for wide-area milling, and information about the multiple machining positions for multi-point milling. The above steps are used to perform both wide-area and multi-point milling. With this configuration, it is possible to perform both wide-area and multi-point milling automatically within a single machining time. Furthermore, the same procedure is followed even if only one of the milling operations is performed: wide-area milling and multi-point milling.

[0109] (v) Multi-point milling can be performed according to the following procedure. First, the multiple machining positions and the number of milling operations at each of these positions are set. Then, the sample's multiple machining positions are machined according to this information. At this stage, at least one milling operation is performed alternately in at least one of the multiple machining positions, and multiple milling operations are performed at at least one of the multiple machining positions with a time interval between each operation. If the milling operation is performed with a time interval, the milling operation at the other machining position is performed during that time interval. This configuration makes it possible to significantly reduce the repositioning expected in the respective machining positions.

[0110] Additionally, the final machining phase (the last milling operation) can be performed sequentially at the multiple machining positions. In this way, the final machining is carried out sequentially at the respective machining positions, thus significantly suppressing the repositioning that would otherwise be expected at each machining position.

[0111] Furthermore, the final machining can be performed with an acceleration voltage that is weaker than that used when machining is carried out alternately at the multiple machining positions. In this case as well, the same effect of suppressing repositioning can be achieved.

[0112] (vi) According to the embodiment, it is possible to perform the following milling operation. First, the sample is milled over a larger area than the width of the ion beam, and the milled areas are located. Subsequently, the milled area where the deposit is located is subjected to wide-area milling in the depth direction of the sample. With this configuration, the hard-to-find areas can be efficiently located by wide-area milling and then subjected to intensive milling. This makes it possible to improve throughput.

[0113] (vii) According to the embodiment, milling can be carried out by the following procedure. First, the multiple samples are attached to the sample mask such that the sample protrudes from the mask by a predetermined amount. The machining position is then determined with respect to each of the multiple samples. Next, the ion beam is emitted from the sample mask onto the sample, multi-point milling is performed to machine a multitude of locations on the sample, and the multiple samples are machined. In this case, the multiple samples can have different thicknesses. With this configuration, samples of different thicknesses can be milled in a single operation. Furthermore, it is possible to avoid risks such as a gap between the sample and the mask due to the different sample thicknesses and the repositioning caused by the ion beam surrounding the gap. Reference symbol list 1 ion source 2 masks 3 Sample 4 Sample mask unit micro-motion mechanism 5 sample unit basis 6 Evacuation system 7 Processing observation windows 8 Sample table 9 rotating element 10 Flange 11, 24 Linear guide 12 magnifying glasses 13 Magnifying glass micro-movement mechanism 15 vacuum chamber 21 Sample mask 22 Sample holder rotating ring 23 sample holders 25 mask holders 26 Sample holder position control 27 Mask fastening screw 28 Sample holder rotary screw 29 backward rotating spring 30 Sample holder position control 35 Sample holder metal holder 40 Light microscope 41 observers 42 Mounting base 50 gearboxes 51 warehouses 52 mask unit attachments 53 Shaft coupling 54 Linear device 55 engine 60 Sample table removal mechanism 70 Sliding milling holder 71 X-transmission 72 Motor unit 73 M-gearbox 74 Motor cable (out) 75 motor cables (in) 76 L-key 77 R key 78 SET button 80 Tax Box 81 Control unit 90 Projection adjustment tool 91 Base 92 Mounting screw 93 Position setting basis 94 micrometers 95 spring 100 ion milling device 101 Closure 102 Light microscope control 103 Control unit 104 Vacuum chamber drive 105 Sample setup basis 106 Fastening screw 107 Sample mounting base 2101 Processing area 2401 Ion beam 2402 processing area. 2403 Gliding range 2501 Ion beam probe 2502 Rotary tilting shaft 2503 oscillating tilting process 2601 Sliding direction 2602 Fault point 2701 Sliding direction 2901 first processing position 2902 processing area 2903 Planing direction 2904 second processing position 3001 first processing area 3002 second processing area 3003 Repositioning 3101 Ion beam 3102 processing area 3103 Processing object 3201 gap 3301 Projection amount 3401 Internal thread screw 3402 External thread screw 3501 Motor unit 3502 Motor unit< / schlussfolgerungen> < / modifikationen>

Claims

Ion milling device (100) which emits an ion beam to a sample (3) in order to machine the sample (3), comprising: an ion source (1) which emits the ion beam; a sample holder (23) which receives the sample (3), at least part of which is shielded by a mask (2); a sample sliding mechanism which moves the sample holder (23) in a direction which includes a normal direction of an axis of the ion beam; a rotation mechanism which rotates and tilts the sample holder (23) about an axis perpendicular to a sliding motion caused by the sample sliding mechanism; and a user interface unit which receives input of machining information to machine the sample (3) in an area which is wider than a width of the ion beam;wherein the ion milling device (100) performs milling over a wide area by carrying out an oscillating sliding motion through the sample sliding mechanism while emitting the ion beam based on the machining information, and wherein the desired machining width is achieved in a single machining operation. Ion milling device (100) according to claim 1, wherein the user interface unit receives information about the positions of the two ends of a machining area or information about the center position of the machining area as machining information. ion milling device (100) according to claim 1, wherein the sample sliding mechanism displaces the sample (3) with a width that is greater than the width of the ion beam. Ion milling device (100) according to claim 1, wherein the sample sliding mechanism is arranged above the rotary mechanism and a position of a rotation shaft of the rotary mechanism is constant. ion milling device (100) according to claim 4, wherein the rotational shaft of the rotational mechanism lies on a path of the ion beam. Ion milling device (100) according to claim 5, wherein the sample sliding mechanism displaces the sample (3) in a plane perpendicular to the axis of rotation of the rotary mechanism. Ion milling device (100) according to claim 1, wherein the user interface unit is used to set a machining position in a multi-point milling operation that processes a plurality of locations of the sample (3); and the ion milling device (100) further comprises: a control unit (103) that controls a movement of the sample sliding mechanism based on information about the machining position set by the user interface unit. Ion milling device (100) according to claim 7, wherein the control unit (103) enables multi-point milling, which processes a plurality of locations of the sample (3). ion milling device (100) according to claim 7, wherein the user interface unit is able to select at least one of the areas in which the sample (3) is processed in an area wider than a width of the ion beam, and multi-point milling which processes a plurality of locations of the sample (3), and the control unit (103) controls a milling operation on the sample (3) by means of a selection input at the operating unit. Ion milling device (100) according to claim 9, wherein in a case where both wide-area milling and multi-point milling are selected by the operating unit, the control controls the milling process and switches between wide-area milling and multi-point milling. Ion milling device (100) according to claim 7, wherein the ion milling device (100) positions the sample (3) on a light microscope (40) and sets a machining position and a machining width for wide-area milling, which processes the sample (3) in an area wider than the width of the ion beam, and a plurality of machining positions for multi-point milling, which processes a plurality of locations on the sample (3) with the light microscope (40); transmits information about the machining position and machining width of the wide-area milling as well as information about the multiple machining positions of the multi-point milling to a control unit (103) that controls a milling operation; removes the sample (3) from the light microscope (40) and positions the sample (3) on an ion milling device (100);and the control initiates the milling process in the ion milling device (100) based on the information about the machining position and controls the machining width of the wide-area milling and the information about the multiple machining positions of the multi-point milling.; Ion milling method in which a sample (3) is processed by emitting an ion beam onto the sample (3), at least part of which is shielded by a mask (2), comprising: arranging the sample (3) on a light microscope (40) and setting a processing position and processing width of a wide-area milling operation that processes the sample (3) in an area wider than the width of the ion beam using the light microscope (40); transmitting information about the processing position and processing width of the wide-area milling operation to a control unit (103) that controls a milling operation; removing the sample (3) from the light microscope (40) and arranging the sample (3) on an ion milling device (100);and cause the control unit (103) to perform wide-area milling by executing an oscillating sliding motion through the sample sliding mechanism, while the ion beam is emitted based on the information about the machining position and the machining width of the wide-area milling, and wherein the desired machining width is achieved in a single operation. Ion milling method according to claim 12, further comprising: setting a plurality of machining positions in the sample (3) of a multi-point milling machine that processes a plurality of locations of the sample (3) with the light microscope (40); transmitting information about the multiple machining positions of the multi-point milling machine to a control unit (103) that controls a milling operation; causing the control unit to control the milling operation in the ion milling device (100) based on the information about the multiple machining positions of the multi-point milling machine. Ion milling method according to claim 12, further comprising: setting a plurality of machining positions during multi-point milling in which several locations of the sample (3) are machined; setting the number of milling operations in the plurality of machining positions; and machining the plurality of machining positions of the sample (3) according to information about the plurality of machining positions and the number of milling operations, wherein when the plurality of machining positions are machined by multi-point milling, at least one milling operation is performed alternately in at least one part of the plurality of machining positions and several milling operations are performed in at least one machining position of the plurality of machining positions with a time interval between them. Ion milling method according to claim 14, wherein the milling operation is performed in another machining position between the milling operations in the at least one machining position in which the multiple milling operations are performed with a time interval between them. Ion milling method according to claim 14, wherein a final phase of the machining is carried out sequentially in the multiple machining positions. Ion milling method according to claim 14, further comprising: performing a finishing operation with an acceleration stress that is weaker than an acceleration stress that is used when the operation is performed alternately in the multiple machining positions. Ion milling method according to claim 12, further comprising: performing wide-area milling on the sample (3) in an area wider than the width of the ion beam and searching for a machining location; and performing the milling in the depth direction of the sample (3) at the machining location determined by the wide-area milling.

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