OPTOELECTRONIC ARRANGEMENT

Abstract

Optoelectronic arrangement, comprising - a shaped body (2) designed as an electrically insulating body with a top surface (2a) and a bottom surface (2b) facing away from the top surface (2a), - a first pixel group (41) to which a plurality of pixels (1) are assigned, each comprising a first semiconductor area (11), a second semiconductor area (12) and an active area (10) which emits and / or absorbs electromagnetic radiation during operation of the arrangement, - a multitude of separating structures (3) arranged between the pixels (1), and - comprising at least one first contact structure (51, 52, 53) comprising a first contact plane (51), a first via (53) extending completely through the electrically insulating body in the vertical direction (z), and a first contact point (52) freely accessible at the bottom surface (2b), wherein the first contact plane (51) is electrically connected to the first via (53), wherein - the pixels (1) of the first pixel group (41) are arranged next to each other on the top surface (2a), - the first semiconductor regions (11) and / or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically isolated from each other by means of the separating structures (3), - the first pixel group (41) is uniquely assigned a first contact structure (51, 52, 53), and - the first semiconductor areas (11) of the pixels (1) of the first pixel group (41) are electrically connected to each other exclusively by means of the first contact plane (51) and can be electrically contacted by means of the first contact point (52), and - the electrically insulating body is designed as a mechanically stabilizing component of the arrangement.

Description

[0001] The publications DE 10 2008 016 525 A1 and DE 10 2009 036 621 A1 describe optoelectronic arrangements.

[0002] One task to be solved is to specify an optoelectronic arrangement that can be manufactured in a simplified manner.

[0003] This problem is solved, among other things, by an optoelectronic arrangement according to claim 1. Further embodiments are the subject of the dependent claims.

[0004] An optoelectronic arrangement is specified. The optoelectronic arrangement can be designed for the emission and / or absorption of electromagnetic radiation. The optoelectronic arrangement can be a light-emitting diode arrangement, such as a display, and / or a photodiode arrangement.

[0005] According to at least one embodiment, the optoelectronic arrangement comprises a molded body with a top surface and a bottom surface facing away from the top surface. The molded body serves as a support for the optoelectronic arrangement. The molded body can be formed from or consist of a plastic material and / or a resin, particularly a synthetic resin. In particular, the molded body is not a substrate for the optoelectronic arrangement. The molded body can be electrically insulating. Furthermore, the molded body can be formed in one piece, i.e., as a single, continuous piece. For example, the molded body is a potting compound. Alternatively, the molded body can be layered, for example, as a conformally formed, preferably electrically insulating layer.

[0006] The molded body has a principal plane of extension in which it extends in lateral directions. The top and bottom surfaces of the molded body each form a principal plane. Perpendicular to the principal plane of extension, in a vertical direction, the molded body has a thickness. The thickness of the molded body is small compared to its maximum lateral extent. For example, the thickness of the molded body is at least 80 µm and at most 120 µm. Alternatively, the thickness of the molded body can be at least 1 µm and at most 10 µm, preferably at most 8 µm.

[0007] According to at least one embodiment, the optoelectronic arrangement comprises a first pixel group. A plurality of pixels is assigned to the first pixel group. In other words, the first pixel group includes a plurality of pixels. Each pixel of the first pixel group has a first semiconductor region, a second semiconductor region, and an active region. The active region emits and / or absorbs electromagnetic radiation during operation of the arrangement. The first semiconductor region, the second semiconductor region, and the active region can each be formed from or consist of a (compound) semiconductor material. For example, the first semiconductor region, the second semiconductor region, and the active region are each based on GaN. The pixels can be individual segments of the arrangement.The pixels can have a maximum dimension of at least 30 µm and at most 300 µm in the lateral directions, preferably at most 100 µm and particularly preferably at most 50 µm.

[0008] In this context, and subsequently, a "pixel group" can refer to a set of pixels grouped together based on shared properties. These shared properties include, for example, a common electrical contact between the first and / or second semiconductor regions of the pixels within the group. The first and / or second semiconductor regions of the pixels in the group can then be at a common electrical potential. Alternatively or additionally, the shared properties can be determined by a common spatial arrangement of the pixels within the group, such as an arrangement in a common row or column of a matrix.

[0009] According to at least one embodiment, the optoelectronic arrangement comprises a plurality of separating structures. The separating structures are arranged between the pixels. The separating structures can serve to spatially separate at least parts of the pixels. Furthermore, the pixels can be optically decoupled from each other by means of the separating structures.

[0010] According to at least one embodiment, the optoelectronic arrangement has at least one first contact structure. This first contact structure comprises a first contact plane and a first contact point. The first contact point is freely accessible on the base surface. In particular, the first contact point on the base surface can be electrically connected from the outside. The first contact structure can be electrically conductive. In particular, the first contact plane and the first contact point can be formed from or consist of at least one metal. All components of the first contact structure can be at a common electrical potential. In other words, the first contact plane, the first contact point, and optionally further components of the first contact structure are electrically connected to one another.

[0011] According to at least one embodiment of the optoelectronic arrangement, the pixels are arranged side by side on the top surface. "Arranged on the top surface" here and in the following can mean that the pixels are arranged in a common plane that runs parallel to the top surface within the manufacturing tolerances. Further components of the arrangement, such as the first contact layer and / or an insulating layer, can then be arranged between the pixels and the molded body. Alternatively or additionally, the pixels can at least partially abut directly against the top surface.

[0012] Each pixel can have a radiation transmission surface facing away from the substrate. The electromagnetic radiation emitted and / or absorbed by the active area passes through the pixel's radiation transmission surface. These radiation transmission surfaces can, for example, form a common luminous surface of the arrangement, which is segmented due to the separation of the pixel radiation transmission surfaces by the separating structures.

[0013] The pixels can also be arranged laterally spaced apart from each other. For example, a lateral distance between two adjacent pixels is at least 1 µm and at most 20 µm, preferably at most 7 µm, and particularly preferably at most 5 µm. Here, and in the following, the lateral distance is the minimum distance between two outer faces of the pixels in one of the lateral directions. Furthermore, here, and in the following, pixels can be considered "adjacent" if they are arranged directly next to each other in the lateral directions. At least one of the separating structures can be arranged between any two pixels. For example, the pixels are arranged in a matrix-like manner, i.e., in rows and columns, on the top surface.

[0014] According to at least one embodiment of the optoelectronic arrangement, the first semiconductor regions and / or the second semiconductor regions of adjacent pixels are electrically isolated from one another by means of the separating structures. For this purpose, the separating structures can comprise an electrically insulating material. The electrically insulating material can be, for example, a passivation layer formed with an oxide and / or a nitride, a plastic, or a gas, such as the ambient atmosphere in an apparatus in which the arrangement is manufactured. Furthermore, the first semiconductor regions and / or the second semiconductor regions of adjacent pixels can be spatially separated from one another by means of the separating structures.

[0015] According to at least one embodiment of the optoelectronic arrangement, a first contact structure is uniquely assigned to the first pixel group. In particular, it is possible that a first contact point is uniquely assigned to the first pixel group.

[0016] According to at least one embodiment, the pixels of the first pixel group are electrically connected to one another by means of the first contact plane, in particular the first contact plane of the first contact structure uniquely assigned to this first pixel group. The first contact plane can be in direct contact with the first semiconductor regions of the pixels of the first pixel group, at least partially. It is possible that the first semiconductor regions are electrically connected to one another exclusively by means of the first contact plane.

[0017] According to at least one embodiment of the optoelectronic arrangement, the first semiconductor regions of the pixels of the first pixel group can be electrically connected via the first contact point, in particular the first contact point of the first contact structure uniquely assigned to this first pixel group. For this purpose, the first contact point can be electrically connected to the first contact plane. For example, the arrangement is a surface-mountable device (SMD). Electrical contacting of the first contact point can then be achieved by means of a solder connection.

[0018] According to at least one embodiment, the optoelectronic arrangement comprises a carrier-shaped body with a top surface and a bottom surface facing away from the top surface, a first pixel group, a plurality of separating structures, and a first contact structure. The first pixel group has a plurality of pixels, each comprising a first semiconductor region, a second semiconductor region, and an active region that emits and / or absorbs electromagnetic radiation during operation of the arrangement. The plurality of separating structures is arranged between the pixels. The first contact structure has a first contact plane and a first contact point that is freely accessible on the bottom surface. The pixels are arranged side by side on the top surface. The first semiconductor regions and / or the second semiconductor regions of the adjacent pixels are electrically isolated from each other by means of the separating structures.The first pixel group is uniquely assigned a first contact structure. Furthermore, the first semiconductor areas of the pixels of the first pixel group are electrically connected to each other via the first contact plane and can be electrically contacted via the first contact point.

[0019] According to at least one embodiment of the optoelectronic arrangement, the first contact point comprises the only contact point of the at least one first contact structure that is freely accessible on the bottom surface of the molded body. In other words, the first contact structure has a single first contact point. In particular, it is possible that the first semiconductor regions of the pixels of the first pixel group can be electrically contacted from the outside exclusively via the first contact point.

[0020] According to at least one embodiment of the optoelectronic arrangement, the molded body is designed as a mechanically stabilizing component of the arrangement. Here and in the following, "mechanically stabilizing" means that the mechanical handling of the optoelectronic arrangement is improved by means of the molded body, and that, for example, a higher external force can be applied to the optoelectronic arrangement without it being damaged. In particular, the molded body can make the optoelectronic arrangement mechanically self-supporting, meaning that the optoelectronic arrangement can be handled, for example, during a manufacturing process with tools such as tweezers, without the need for an additional supporting element.

[0021] The use of a molded body as a mechanically stabilizing element particularly simplifies the manufacturing of the optoelectronic arrangement. Furthermore, the molded body guarantees high mechanical stability.

[0022] It is further possible that a conversion material for wavelength conversion of the electromagnetic radiation emitted and / or absorbed by the active areas is applied to at least one of the radiation transmission surfaces, preferably to at least 50% of the radiation transmission surfaces, and particularly preferably to all radiation transmission surfaces. For example, the conversion material can be applied to the radiation transmission surfaces as a casting. The casting can be made of a silicone or an epoxy resin into which wavelength-converting particles, such as phosphor particles or quantum dots, are incorporated. Alternatively, the conversion material can be in the form of a converter plate, in particular a ceramic converter plate. In particular, it is possible that a single converter plate is applied to at least 50% of the radiation transmission surfaces.The converter plate can also have a mechanically stabilizing effect. For example, the converter plate can be manufactured using electrophoresis. In addition, the conversion material can be applied as a layer to the radiation transmission surfaces, for example by spray coating.

[0023] According to at least one embodiment of the optoelectronic arrangement, the molded body is formed with or consists of at least one of the following materials: epoxy resin, silicone resin. These materials can be applied in particular by means of a compression molding process, an injection molding process and / or a compression molding process.

[0024] According to at least one embodiment of the optoelectronic arrangement, the separating structures are formed by trenches that are free of the pixel material. The first semiconductor regions, the active regions, and / or the second semiconductor regions of adjacent pixels are spatially separated from one another by the trenches. In particular, the first semiconductor regions, the active regions, and / or the second semiconductor regions are not connected to each other by a semiconductor material. The trenches can, for example, be etched trenches that have been introduced into a semiconductor layer sequence, from which the first semiconductor regions, the active regions, and / or the second semiconductor regions can originate, during a manufacturing process.

[0025] According to at least one embodiment of the optoelectronic arrangement, the shaped body extends into the grooves. In other words, the shaped body is positioned at least partially between the pixels. In particular, the grooves can be completely filled with the shaped body. The shaped body, inserted into the grooves, can be anchored to the pixels. Furthermore, the mechanical stability of the arrangement can be further increased by inserting the shaped body into the grooves.

[0026] The shaped body can be designed to be radiation-opaque. Optical separation of the pixels can then be achieved, for example, by means of the shaped body inserted into the grooves. Furthermore, it is possible for the shaped body to be radiation-reflective. For example, radiation-reflective particles can be embedded in the shaped body for this purpose. Hereinafter, a component of the arrangement is considered "radiation-opaque" if it has a transmittance of at most 40%, preferably at most 20%, and particularly preferably at most 10% for the electromagnetic radiation emitted and / or absorbed by the active areas. Furthermore, a component of the arrangement is considered "radiation-reflective" hereinafter, and subsequently, if it has a reflectance of at least 60%, preferably at least 80%, and particularly preferably at least 90% for the electromagnetic radiation.

[0027] According to at least one embodiment of the optoelectronic arrangement, the first semiconductor regions and the active regions of adjacent pixels are spatially completely separated from one another. In other words, the first semiconductor regions and the active regions of adjacent pixels are not connected by a semiconductor material. Furthermore, the second semiconductor regions of adjacent pixels are connected via intermediate regions. These intermediate regions are formed with the same material as the second semiconductor regions. The second semiconductor regions of the pixels can thus be continuous and formed as a single piece. It is possible for the intermediate regions to have a smaller vertical extent than the second semiconductor regions.

[0028] According to at least one embodiment of the optoelectronic arrangement, the space between the pixels is at least partially free of semiconductor material. In particular, the space between the pixels can be completely free of semiconductor material. In other words, it is possible that the first semiconductor regions, the active regions, and the second regions of the pixels are not connected to each other by a semiconductor material. The space between the pixels can consist of the separating structures formed by the grooves.

[0029] According to at least one embodiment of the optoelectronic arrangement, a plurality of first pixel groups are present. Each of the first pixel groups is uniquely assigned a first contact structure. The pixels of each of the first pixel groups can be electrically connected to one another by means of the first contact plane uniquely assigned to the respective first pixel group. Furthermore, the pixels of each of the first pixel groups can be electrically connected to the first contact point uniquely assigned to the respective first pixel group.

[0030] According to at least one embodiment, the optoelectronic arrangement comprises a plurality of second pixel groups. Furthermore, the arrangement comprises at least one second contact structure having at least one second contact plane and one second contact point. The second contact point may be the only contact point of the second contact structure that is freely accessible from the base surface. In other words, the second contact point is electrically contactable from the base surface. The second contact structure may comprise or be formed from the same materials as the first contact structure.

[0031] According to at least one embodiment of the optoelectronic arrangement, each second pixel group is uniquely assigned at least one pixel from each of the first pixel groups. Conversely, it is possible that each pixel of the second pixel group is uniquely assigned to a first pixel group. In other words, each pixel of the optoelectronic arrangement is assigned to a single first pixel group and a single second pixel group. For example, the pixels are arranged in a matrix on the top surface, with the pixels arranged in a row of the matrix each assigned to one of the first pixel groups, while the pixels arranged in a column of the matrix each assigned to one of the second pixel groups.

[0032] Furthermore, each second pixel group is uniquely assigned a second contact structure. The second semiconductor regions of the pixels in the second pixel group are electrically connected to each other via the second contact plane and can be electrically contacted via the second contact point. In particular, the pixels of the second pixel group can be electrically contacted via the second contact point of the second contact point assigned to this second pixel group. The second contact point can have the same structure as the first contact point.

[0033] According to at least one embodiment of the optoelectronic arrangement, the at least one first contact structure has at least one first via that extends completely through the molded body in the vertical direction. Alternatively or additionally, the optionally present second contact structure can have at least one second via that extends completely through the molded body in the vertical direction. The first via and / or the optionally second via can have the same vertical extent as the molded body. The first via and / or the optionally second via is electrically connected to the first contact plane and the second contact plane, respectively.Furthermore, the first via or, if applicable, the second via is electrically conductively connected to the first contact point or to the second contact point.

[0034] For example, the via extends from the base surface of the molded body completely through the molded body. Particularly preferably, the via extends from the base surface of the molded body completely through the molded body and through the active layer of the semiconductor layer sequence. Here, the via is preferably formed by a single electrically conductive element, for example, made of a metal. The contact structure can be formed by the via, the contact point, and the contact plane. According to one embodiment, the via is free of electronic components such as switches, transistors, or the like.

[0035] It is particularly possible that only the at least one first and at least one second contact point are provided for the electrical contacting of the arrangement. The arrangement then comprises exclusively electrical contact points located on the base surface and freely accessible there. The electrical connection of the at least one first and at least one second contact point with the first and second semiconductor regions, in particular the first and second contact planes, can be wireless, achieved by means of the at least one first and at least one second via. The arrangement is, in particular, free of wire contacting.

[0036] By using vias for the electrical connection of the contact points and semiconductor areas, it is particularly possible to provide an easily contactable arrangement without wire contacts. The electrical contact can be made exclusively on the base surface of the die. This allows for the simple realization of an arrangement that includes, in particular, matrix-like pixels. The optoelectronic arrangement can therefore be a so-called flip chip.

[0037] According to at least one embodiment of the optoelectronic arrangement, the material of the first via and / or the optionally second via is electroplated. The first and / or the second via can each comprise at least one metal, in particular copper, nickel, tin, and / or gold. For example, the first and / or the second via is electroplated onto a portion of the first contact plane and / or the second contact plane.

[0038] Furthermore, it is possible that at least one first via and / or at least one second via may form a mechanically stabilizing component of the arrangement. For example, the first via and / or the second via together with the molded body may form the only mechanically stabilizing component of the arrangement.

[0039] According to at least one embodiment of the optoelectronic arrangement, all first semiconductor regions, all second semiconductor regions, and all active regions are derived from a common, and in particular a single, first semiconductor layer, a common, and in particular a single, second semiconductor layer, and a common, and in particular a single, active layer, respectively. In other words, the pixels are generated by structuring and at least partially ablating a sequence of semiconductor layers comprising a first semiconductor layer, a second semiconductor layer, and an active layer.

[0040] In particular, it is possible for the pixels to be attached together, i.e., within the wafer assembly, to the top surface of the shaped body. For example, the structuring of the semiconductor layer sequence is carried out after the shaped body has been attached. This makes it possible to provide an arrangement with a segmented luminescent surface in which neighboring pixels have a small lateral distance. The lateral distances of the pixels are then limited, for example, only by the technique used for segmentation. For instance, when using a photographic technique, the lateral distance between neighboring pixels is at most 5 µm in approximately 99.7% of cases (the so-called 3-sigma range). Furthermore, it is possible to create pixels with small lateral dimensions.In contrast to the segmented pixels described above, the lateral distance for pixels that were attached to the top surface by individually positioning the previously generated pixels is at least 10 µm.

[0041] Furthermore, a method for manufacturing an optoelectronic arrangement is described. The optoelectronic arrangement can preferably be manufactured using the method described herein. That is to say, all features disclosed for the arrangement are also disclosed for the method and vice versa.

[0042] According to at least one embodiment of the method, a sequence of semiconductor layers is first deposited on a growth substrate. The semiconductor layer sequence comprises a first semiconductor layer, a second semiconductor layer, and an active layer. The active layer can be designed for the emission and / or absorption of electromagnetic radiation.

[0043] According to at least one embodiment of the method, the separating structures and the pixels are generated. For this purpose, the semiconductor layer sequence is selectively removed using an etching process. In particular, grooves can be created in the semiconductor layer sequence, which can form separating structures between the pixels. The structuring of the pixels can be carried out, for example, using a photographic technique.

[0044] According to at least one embodiment of the method, the shaped body is produced on a side of the semiconductor layer sequence facing away from the growth substrate. In particular, it is possible for the shaped body to be produced on the side of the pixels facing away from the growth substrate. "Producing" the shaped body here and in the following means that the material of the shaped body is applied to the semiconductor layer sequence. In particular, the material of the shaped body for producing the shaped body is in liquid, granular, paste-like, and / or gaseous form.

[0045] According to at least one embodiment of the method, the growth substrate is removed. This removal can be achieved, for example, using an etching process or by laser lift-off. The optoelectronic arrangement can thus be free of a growth substrate.

[0046] According to at least one embodiment of the method, it comprises the following steps: - Providing a sequence of semiconductor layers comprising a first semiconductor layer, a second semiconductor layer and an active layer, on a growth substrate, - Creating the separation structures and pixels by selectively removing the semiconductor layer sequence using an etching process, - Creating the shaped body on a side of the semiconductor layer sequence facing away from the growth substrate, and - Removal of the growth substrate.

[0047] It is possible that the procedural steps are carried out in the specified order.

[0048] According to at least one embodiment of the method, the application of the form and the removal of the growth substrate take place before the creation of the separation structures and the pixels. In other words, the structuring of the pixels occurs after the application of the form. In particular, the etching process is carried out after the form has been created on the semiconductor layer sequence.

[0049] According to at least one embodiment of the method, the molded part is applied using a casting process. For the purposes of this and the following discussion, casting processes include, for example, injection molding, compression molding, and injection compression molding.

[0050] Alternatively or additionally, it is possible to laminate the molded body as a film, apply it as a lacquer and / or apply it by means of chemical or physical vapor deposition.

[0051] The optoelectronic arrangement described here, as well as the method for manufacturing an optoelectronic arrangement described here, will be explained in more detail below using exemplary embodiments and the associated figures. The Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. Figure 7 shows exemplary embodiments of the optoelectronic arrangements described herein, based on schematic top and sectional views. The Fig. Figure 8 shows an embodiment of a method described herein for the manufacture of an optoelectronic arrangement by means of schematic sectional views.

[0052] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or better understanding.

[0053] Based on the schematic sectional view of the Fig. 1A as well as the schematic supervisions of the Fig. 1B and Fig. 1C is an embodiment of an optoelectronic arrangement described here, which is explained in more detail below. The one in the Fig. The section through the arrangement shown in 1A is made along a first section line AB. Fig. 1B shows a top view, while the Fig. Figure 1C shows a top view from below. Here and in the following, a top view refers to a view of the radiation transmission surfaces 1a of the pixels 1 of the optoelectronic arrangement, while a bottom view refers to a view of a side of the arrangement facing away from the radiation transmission surfaces 1a.

[0054] The optoelectronic arrangement comprises a shaped body 2 with a top surface 2a and a bottom surface 2b facing away from the top surface 2a. The bottom surface 2b is freely accessible. The shaped body 2 serves to mechanically stabilize the arrangement. The shaped body 2 extends along two lateral directions x, y, which define a principal plane of extension of the shaped body. The top surface 2a and the bottom surface 2b each form a principal plane of the shaped body.

[0055] A plurality of pixels 1 are attached to the top surface 2a. The pixels 1 are assigned to a first pixel group 41. Furthermore, each pixel 1 is assigned to a second pixel group 42. The optoelectronic arrangement of the in the Fig. 1A, Fig. 1B and Fig. The embodiment shown in 1C comprises – purely by way of example – a single first pixel group 41, wherein all pixels 1 of the arrangement of Fig. 1A, Fig. 1B and Fig. 1C is assigned to the first pixel group 41. Each of the second pixel groups 42 is then assigned a single pixel 1.

[0056] Each pixel 1 comprises a first semiconductor region 11, an active region 10, and a second semiconductor region 12. The first semiconductor region 11 can, for example, be formed with an n-type semiconductor material. The second semiconductor region 12 can be formed with a p-type semiconductor material.

[0057] Furthermore, each pixel 1 has a radiation transmission surface 1a facing away from the shaped body 2. The second semiconductor region 12 is roughened at the radiation transmission surface 1a. The roughenings serve as outcoupling and incoupling structures, by means of which the transmission of electromagnetic radiation through the radiation transmission surface 1a is improved.

[0058] Between two adjacent pixels 1 are separating structures 3. The side faces 1b of the pixels 1 directly border the separating structures 3. In the Fig. 1A, Fig. 1B and Fig. In the embodiment shown in Figure 1C, the separation structures 3 are designed as trenches, wherein the first semiconductor regions 11, the active regions 10 and the second semiconductor regions 12 are completely separated by the trenches.

[0059] The optoelectronic arrangement comprises a first contact structure 51, 52, 53, which is uniquely assigned to the first pixel group 41. Furthermore, the arrangement comprises a plurality of second contact structures 61, 62, 63, wherein each of the second pixel groups 42 of the arrangement is uniquely assigned a second contact structure 61, 62, 63.

[0060] The first contact structure 51, 52, 53 comprises a first contact plane 51, a first contact point 52, and at least one first via 53. The first contact plane 51 is continuous. In particular, an outer surface of the first contact plane 51 is multiply continuous when viewed from the vertical direction z. The first contact plane 51 is freely accessible within the grooves of the separating structures 3. Alternatively, a dielectric may be applied to the first contact plane 51 within the grooves of the separating structures 3. In this case, the first contact plane 51 is not freely accessible in the region of the grooves of the separating structures 3. The first contact plane 51 can be electrically connected to the first semiconductor regions 11 of the pixels 1 and, in particular, be in direct contact. For example, the first semiconductor regions 11 of the pixels 1 can be at a common electrical potential.

[0061] The first contact plane 51 can be radiation-reflecting. The first contact plane 51 can be formed with a metal, such as silver or aluminum, or consist of a metal.

[0062] The first contact plane 51 is electrically connected to the first contact point 52 by means of the first via 53. For example, the first via 53 is formed with the same material as the first contact plane 51. The first via 53 can be electroplated onto the first contact plane 51. For example, the first via 51 can be electroplated in a manufacturing process in a process step that is carried out before the forming of the molded body 2. In particular, the first via 53 can extend completely through the molded body 2 in the vertical direction z.

[0063] The first contact point 52 is freely accessible on the floor surface 2b and, in particular, electrically contactable (compare Fig. 1A and Fig. 1C). The first contact point 52 can be formed with or consist of at least one electrically conductive material, such as aluminium, silver, palladium, gold, platinum, titanium, tin, copper or nickel.

[0064] An insulating layer 71, formed with an electrically insulating material such as silicon nitride or silicon oxide, is provided between the shaped body 2 and the first contact plane 51, and between the shaped body 2 and the pixels 1. The insulating layer 71 can serve as electrical insulation between the material of the pixels 1, so that an electrical connection is established solely via the first contact structure 51, 52, 53 and the second contact structure 61, 62, 63. In particular, the insulating layer 71 can completely cover the top surface 2a of the shaped body 2 and be in direct contact with it. Furthermore, it is possible that areas of an outer surface of the first semiconductor region 11 facing the shaped body 2 that are not covered by the first contact plane 51 are covered by the insulating layer 71 and are in direct contact with it.

[0065] The second contact structure 61, 62, 63 comprises a second contact plane 61, a second contact point 62, and a second via 63. The second via 63 extends completely through the molded body 2 in the vertical direction z. The second via 63 is also electrically connected to the second contact point 62. The second contact point 62 is freely accessible at the base surface 2b and, in particular, electrically contactable (compare Fig. 1A and Fig. 1C).

[0066] The second contact level 61 is also configured as an electrical via, extending from the second via 63 through the insulating layer 71, the first semiconductor region 11, and the active region 10 into the second semiconductor region 12 of the pixel 1 associated with the second via 63. The second contact level 62 and the second via 63 can be formed integrally. The second contact level 61 can be electrically insulated from the first semiconductor region 11 and the active region 10 by means of a further insulating material (not shown in the figures).

[0067] The first contact plane 51 surrounds the second vias 63 in a frame-like manner. In other words, in a top view, the second vias 63 are at least partially, preferably completely, enclosed by the first contact plane 51 in the lateral directions x, y. Furthermore, the first via 53 is arranged laterally spaced from one of the second vias 63.

[0068] The shaped body 2 completely surrounds the first via 53 and the second vias 63 in lateral directions x, y. In particular, the first and second vias 53, 63 are laterally embedded by the shaped body 2.

[0069] Based on the schematic top views of the Fig. 2A, Fig. 2B, Fig. 2C and Fig. Section 2D provides a more detailed explanation of further embodiments of an optoelectronic arrangement described herein. Each is shown from a top view. The illustrated embodiments can, for example, be visualized along the first section line AB in connection with the Fig. exhibit the discussed structure 1A.

[0070] The in the Fig. 2A, Fig. 2B, Fig. 2C and Fig. The optoelectronic arrangements shown in 2D each have a plurality of pixels 1, each assigned to at least one first pixel group 41 and at least one second pixel group 42. The pixels 1 are arranged next to each other in the lateral directions x, y. The structure of the exemplary embodiments of the optoelectronic arrangement differs from the above. Fig. 2A, Fig. 2B, Fig. 2C and Fig. 2D as follows.

[0071] In the exemplary embodiment of the Fig. In 2A, the pixels 1 have the same size and, in particular, the same dimensions in the lateral directions x and y. The pixels 1 are arranged in a matrix in rows 43 and columns 44. The first contact point 51 extends across several pixels 1 in a column 44. Alternatively, the arrangement may have multiple first contact points 51. In this case, the pixels 1 can be assigned to several first pixel groups 41, with each first pixel group 41 having a unique first contact point 51 assigned to it.

[0072] Pixel 1 of the exemplary embodiment of the Fig. 2B are also arranged in a matrix-like manner, with the pixels of different rows 43 of the matrix having different dimensions in one of the lateral directions x, y.

[0073] In the exemplary embodiment of the Fig. 2C the pixels 1 are arranged in rows, wherein the number of pixels 1 differs from at least two rows 43 and the pixels 1 of different rows 43 have different dimensions in the lateral directions x, y.

[0074] Pixel 1 of the exemplary embodiment of the Fig. 2D objects exhibit different shapes and different dimensions in the lateral directions x, y. At least one of the pixels 1 can be elliptical, and in particular circular, in a top view. The pixels 1 adjacent to the elliptical pixel 1 have at least one curved side surface 1b.

[0075] Based on the in the Fig. Figure 3, a schematic top view, illustrates a further embodiment of an optoelectronic arrangement described herein. The arrangement comprises a plurality of pixels 1 arranged in a matrix in rows 43 and columns 44. For illustrative purposes, all pixels 1 are assigned to a single first pixel group 41. The dashed lines between the pixels indicate that the number of rows 43 and columns 44, and in particular the number of pixels 1, is arbitrarily scalable. Specifically, the number of rows 43 and columns 44 can be adapted to the respective technical requirements. All pixels 1 are mounted on the common form 2. The form 2 can extend beyond the pixels 1 in the lateral directions x and y.

[0076] Based on the in the Fig. In the schematic top view shown in Figure 4, a further embodiment of an optoelectronic arrangement described here is explained in more detail. The pixels 1 of the arrangement are again arranged in a matrix in rows 43 and columns 44. In contrast to the one shown in the Fig. In the embodiment shown in 3, the pixels 1 in each row 43 are assigned to a first pixel group 41, and the pixels in each column 44 are assigned to a second pixel group. Each pixel 1 is assigned to a first pixel group 41 and a second pixel group 42.

[0077] The electrical contact of the pixel 1 of the first pixel group 41 is effected by means of a first contact structure 51, 52, 53, each comprising a first contact plane 51 and a contact point 52. Furthermore, the electrical contact of the pixel 1 of the second pixel group 42 is effected by means of a second contact structure 61, 62, 63, each comprising a second contact plane 61 and a second contact point 62. The second semiconductor regions 12 of the pixel 1 of each of the second pixel groups 42 are electrically connected to each other by means of the second contact plane 62 assigned to the second pixel group 42.

[0078] By such a division into first pixel groups 41, each assigned to a row 43, and second pixel groups 42, each assigned to a column 44, it is possible to electrically control the pixels 1 individually by means of a small number of first and second contact points 52, 62.

[0079] Based on the sectional views of the Fig. 5A, Fig. 5B, Fig. 6A, Fig. 6B and Fig. Section 7 describes further embodiments of an optoelectronic arrangement described herein. The sections through the arrangement shown are taken along a path shown in the Fig. 4 shown second section line CD or along a third section line C'D'.

[0080] Based on the section view running along the third section line CD of the Fig. 5A describes the electrical contacting of pixel 1 in an embodiment of the arrangement described here. The separating structures 3 between the pixels 1 are as shown in the Fig. The embodiment shown in Figure 1A is designed as follows. Each second pixel group 42 is uniquely assigned a second contact structure 61, 62, 63 with a second contact point 62, a second contact plane 61 and at least one second via 63.

[0081] The second semiconductor areas 12 of the pixels 1 of the respective second pixel group 42 are electrically connected to each other by means of the second contact plane 61. In the case of multiple pixels 1 per second pixel group 42, the second contact plane 61 can be connected in conjunction with the Fig. 1A describes the electrical through-hole connection through the pixel 1 and also includes a single-piece electrically conductive layer, which is formed, for example, with a metal. The second contact layer 61 can be radiation-reflecting, at least in some areas. The first semiconductor regions 11 of the pixel 1 can also be electrically connected to further pixels 1 of the first pixel group 41 by means of several first contact layers 51.

[0082] Based on the section view running along the third section line C'D' of the Fig. Section 5B describes in more detail the electrical contacting of pixel 1 of an embodiment of the arrangement described here. The electrical contacting and connection of the second semiconductor areas 12 is achieved by means of the second contact structure 61, 62, 63. The structure of the second contact structure 61, 62, 63 corresponds to that of the Fig. 5A. The first semiconductor regions 11 can be electrically contacted by means of first contact structures 51, 52, 53, wherein each first pixel group 41 is uniquely assigned a first contact structure 51, 52, 53. The first vias 53 of the first contact structures 51, 52, 53 are each arranged laterally spaced from the second vias 63 of the second contact structure 61, 62, 63.

[0083] Based on the section view along the second section line CD, the Fig. 6A or the section view along the third section line C'D' of the Fig. 6B is a further embodiment of the arrangement described here, explained in more detail. In contrast to the one in connection with the Fig. 1A, Fig. 5A and Fig. In the embodiments described in Figure 5B, only the first semiconductor regions 11 and the active regions 12 of adjacent pixels 1 are completely separated from each other by the separating structures 3, which are designed as trenches. The second semiconductor regions 12 are connected to each other via intermediate regions 31. The shaped body 2 extends into the separating structures 3, which are designed as trenches. The separating structures 3 are thus formed by the shaped body 2. Furthermore, the insulating layer 71 is partially arranged in the trenches of the separating structures 3. Such a configuration of the separating structures 3 is possible for all embodiments of the optoelectronic arrangement described here.

[0084] Based on the section view along the second section line CD, the Fig. Figure 7 describes a further embodiment of the arrangement described here in more detail. The embodiment shown essentially corresponds to that of the Fig. 6A, wherein the separation structures 3 are now formed by a degenerate semiconductor material 32. For example, in a manufacturing process, areas of the first semiconductor layer 111 are backsputtered. Backsputtering can be achieved, for example, by treating the first semiconductor layer with a plasma, such as an argon plasma, a hydrogen plasma, and / or an oxygen plasma. This treatment results in at least partial destruction of the conductivity of the material of the first semiconductor layer 111 and thus a re-doping to the degenerate semiconductor material 32. The degenerate semiconductor material 32 is, in particular, non-conductive.

[0085] Based on the schematic sectional views of the Fig. 8A and Fig. Section 8B provides further details on exemplary embodiments of a method described herein for the fabrication of an optoelectronic arrangement. In the first step of the process, Fig. In step 8A, a semiconductor layer sequence 111, 101, 121, comprising a first semiconductor layer 111, an active layer 101, and a second semiconductor layer 121, is provided on a growth substrate 8. The shaped body 2 is already formed on one side of the semiconductor layer sequence 111, 101, 121 facing away from the growth substrate 8. Before forming the shaped body 2, a first contact structure 51, 52, 53 and a second contact structure 61, 62, 63 can be deposited onto the semiconductor layer sequence 111, 101, 121, for example, by electroplating.

[0086] In the Fig. In the process step shown in 8B, the growth substrate 8 is removed. Separation structures 3 have been introduced into the semiconductor layer sequence 111, 101, 121 by means of etching. In particular, the introduction of the separation structures 3 can take place after the application of the shaped body 2.

[0087] Alternatively to the one in the Fig. 8A and Fig.In the method shown in Figure 8B, the formation of the shaped body 2 can also take place after the structuring of the pixels 1. The growth substrate 8 is then removed after the formation of the pixels 1. Reference symbol list 1 pixel 10 active area 11 first semiconductor area 12 second semiconductor area 101 active layer 111 first semiconductor layer 121 second semiconductor layer 1a Radiation transmission area 1b Side surfaces 2 molded bodies 2a Cover surface 2b Floor area 3 Separation structure 31 Intermediate area 32 degenerate area 41 first pixel group 42 second pixel group 43 lines 44 columns 51 first contact level 52 first point of contact 53 first via 61 second contact level 62 second contact point 63 second via 71 Insulation layer 8 Growth substrate AB first cutting line CD second cutting line C'D' third line of intersection x, y lateral directions z vertical direction

Claims

[1] Optoelectronic arrangement comprising - a shaped body (2) designed as an electrically insulating body with a top surface (2a) and a bottom surface (2b) facing away from the top surface (2a), - a first pixel group (41) to which a plurality of pixels (1) are assigned, each comprising a first semiconductor area (11), a second semiconductor area (12) and an active area (10) which emits and / or absorbs electromagnetic radiation during operation of the arrangement, - a multitude of separating structures (3) arranged between the pixels (1), and - comprising at least one first contact structure (51, 52, 53) comprising a first contact plane (51), a first via (53) extending completely through the electrically insulating body in the vertical direction (z), and a first contact point (52) freely accessible at the bottom surface (2b), wherein the first contact plane (51) is electrically connected to the first via (53), wherein - the pixels (1) of the first pixel group (41) are arranged next to each other on the top surface (2a), - the first semiconductor regions (11) and / or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically isolated from each other by means of the separating structures (3), - the first pixel group (41) is uniquely assigned a first contact structure (51, 52, 53), and - the first semiconductor areas (11) of the pixels (1) of the first pixel group (41) are electrically connected to each other exclusively by means of the first contact plane (51) and can be electrically contacted by means of the first contact point (52), and - the electrically insulating body is designed as a mechanically stabilizing component of the arrangement. [2] Arrangement according to the previous claim, wherein the first contact point (52) is the only contact point freely accessible on the bottom surface (2b) of the at least one first contact structure (51, 52, 53). [3] Arrangement according to one of the preceding claims, wherein the electrically insulating body is formed in one piece. [4] Arrangement according to one of the preceding claims, wherein the molded body (2) is formed with or consists of at least one of the following materials: epoxy resin, silicone resin. [5] Arrangement according to one of the preceding claims, wherein the first semiconductor regions (11) and the active regions (10) of adjacent pixels (1) are spatially completely separated from each other by the separating structures (3) and wherein the second semiconductor regions (12) of adjacent pixels (1) are connected to each other via intermediate regions (31) formed with the material of the second semiconductor regions (12). [6] Arrangement according to one of the preceding claims, wherein a space between the pixels (1) is at least partially free of a semiconductor material. [7] Arrangement according to one of the preceding claims, wherein a plurality of first pixel groups (41) are present, wherein each first pixel group (41) is uniquely assigned a first contact structure (51, 52, 53). [8] Arrangement according to any one of the preceding claims, further comprising - a large number of second pixel groups (42), - having at least a second contact structure (61, 62, 63) having at least a second contact plane (61) and a second contact point (62) which is freely accessible on the bottom surface (2b) of the molded body (2), wherein - each second pixel group (42) has at least one pixel (1) uniquely assigned to each of the first pixel groups (41), - each second pixel group (42) is uniquely assigned a second contact structure (61, 62, 63), - the second semiconductor areas (12) of the pixels (1) of the second pixel group (42) are electrically connected to each other by means of the second contact plane (61) and can be electrically contacted by means of the second contact point (62). [9] Arrangement according to the previous claim, wherein the at least one second contact structure (61, 62, 63) has at least one second through-hole (63) which extends completely through the shaped body (2) in the vertical direction (z). [10] Arrangement according to the previous claim, wherein the material of the first via (53) and / or the optionally second via (63) is electroplated. [11] Arrangement according to any of the preceding claims, which is free from wire contacting. [12] Arrangement according to one of the preceding claims, wherein all first semiconductor regions (11), all second semiconductor regions (12) or all active regions (10) have been formed from a common first semiconductor layer (111), a common second semiconductor layer (121) or a common active layer (101).

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