POWER TRANSFORMER DEVICE WITH REDUCED DISTANCE BETWEEN PARALLEL-AROUND SEMICONDUCTOR MODULES
By arranging semiconductor modules with symmetrical terminal connections opposite each other, the power converter device achieves reduced module-to-module distance, enabling further miniaturization.
Patent Information
- Application Number
- DE112017006945
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2017-01-27
- Publication Date
- 2026-01-22
- Estimated Expiration
- 2037-01-27
AI Technical Summary
Existing power converter devices fail to sufficiently reduce the distance between parallel semiconductor modules, hindering further miniaturization.
The power converter device employs an arrangement where semiconductor modules with symmetrical terminal connections are positioned opposite each other, allowing for a reduction in module-to-module distance by configuring semiconductor modules in groups of even numbers, with terminals arranged in symmetrical positions relative to a center line.
This configuration effectively reduces the distance between parallel semiconductor modules, facilitating further miniaturization of the power converter device.
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Abstract
Description
Area
[0001] The present invention relates to a power converter device utilizing a semiconductor module comprising a pair of positive electrode side semiconductor switching elements and a negative electrode side semiconductor switching element connected in series. background
[0002] In recent years, high-capacity semiconductor modules have been achieved as a result of advances in semiconductor technology. A semiconductor module has become widespread that incorporates a pair of positive-side semiconductor switching elements and a negative-side semiconductor switching element, configured as an upper and lower arm for one phase of an inverter and integrated together. This type of semiconductor module is called a "2-in-1 module".
[0003] To further increase capacity, 2-in-1 modules can be arranged in parallel to configure one module for a single phase. In this case, it is necessary to arrange six 2-in-1 modules to use a power converter device by utilizing two inverters to drive a motor for three phases; this means two three-phase inverters.
[0004] Against this technological background as described above, patent literature 1, as it is referred to below, describes a configuration in which two three-phase inverters are housed in a single enclosure. Patent literature 2 describes a power converter comprising: several semiconductor modules, each equipped with several switching devices; a heat sink block, one side of which is provided with the several semiconductor modules; a cooling fin provided on the other side of the heat sink block; a filter capacitor electrically connected to the semiconductor modules; and a gate driver for transmitting a control signal to the switching devices, wherein the semiconductor modules are arranged such that the longitudinal direction of the semiconductor module is oriented in a direction parallel to the cooling airflow and the gate driver is arranged on a bottom side facing the direction of gravity.Patent literature 3 describes a vehicle drive motor inverter device comprising two three-phase inverters housed in a single enclosure and consisting of a combination of several switching elements for each driving motors. The two inverters share one or both of the following components: a smoothing capacitor connected between the two input terminals of the inverters, and a damping capacitor for suppressing an overvoltage of each switching element. Patent literature 4 describes a first busbar comprising a first section containing a first node and extending within a first plane.A second busbar comprises: a first connecting section and a second connecting section, both parallel to the first plane; and a bridge section extending from the first connecting section to the second connecting section, perpendicular to the first plane. A third busbar comprises: a second section extending within a second plane parallel to the first plane; and a third section extending to the second section and comprising several second nodes. The first section of the first busbar and the first connecting section of the second busbar are electrically and mechanically connected, as are the second connecting section of the second busbar and the second section of the third busbar. Citation list of patent literature Patent literature 1: Japanese patent application disclosure no. 2015-89244 (JP 2015 - 89 244 A); Patent literature 2: DE 10 2016 207 701 A1; Patent literature 3: JP 2015-89245A; and Patent literature 4: JP 2015 - 142 472 A. Brief description of the technical problem
[0005] Patent literature 1 focuses on miniaturizing and reducing the installation area. However, patent literature 1 employs a configuration in which a conductor rail is used to connect one of the two parallel semiconductor modules to the other, and screws are attached to the terminals of the semiconductor modules. This does not sufficiently reduce the distance between the two parallel semiconductor modules, and there is room for further improvement in terms of miniaturization.
[0006] The present invention was made in consideration of the above problem and it is an object of the present invention to provide a power converter device that can reduce the distance between two parallel semiconductor modules and to achieve further miniaturization. Solution to the problem
[0007] To solve the aforementioned problems and achieve the objective, a power converter device according to the present invention, which utilizes a semiconductor module comprising a pair of semiconductor switching elements connected in series, includes the semiconductor modules, the number of which is an even number of four or more. The semiconductor module has a first terminal, a second terminal, and a third terminal on a surface, with a plurality of attachment points provided in the first terminal, the second terminal, and the third terminal.A positive electrode of a positive-side switching element is electrically connected to the first terminal, a negative electrode of a negative-side switching element is electrically connected to the second terminal, and a negative electrode of the positive-side switching element and a positive electrode of the negative-side switching element are electrically connected to the third terminal.The first, second, or third terminals of the two semiconductor modules that configure a semiconductor module group of the same phase among the semiconductor modules, the number of which is four or more, are arranged opposite each other, and a plurality of the semiconductor module groups are arranged in a direction perpendicular to an arrangement direction of the two semiconductor modules in the semiconductor module group, wherein the first, second, and third terminals in the semiconductor module group are each arranged in symmetrical positions with respect to a center line, the center line being parallel to a short side of each semiconductor module. Advantageous effects of the invention
[0008] According to the present invention, there is an effect in which the distance between two parallel semiconductor modules is reduced in order to achieve further miniaturization. Brief description of drawings Fig. Figure 1 shows a circuit diagram representing a configuration example of a power converter device according to a first embodiment. Fig. Figure 2 shows a top view illustrating an arrangement of terminals of a semiconductor module used in the power converter device according to the first embodiment. Fig. Figure 3 shows a circuit diagram of an inverter circuit located in Fig. Figure 1 shows the semiconductor modules that are in Fig. 2 are shown, are subjected to pressure. Fig. Figure 4 shows a diagram schematically illustrating an arrangement example of six semiconductor modules in a power converter device according to the first embodiment. Fig. Figure 5 shows a diagram illustrating a configuration example of the power converter device according to the first embodiment, mounted on a rail vehicle. Fig. Figure 6 shows a top view representing a connection state between a laminated conductor rail and a semiconductor module. Fig. Figure 7 shows a diagram illustrating an arrangement example of six semiconductor modules of a power converter device in a second embodiment. Fig. Figure 8 shows a diagram illustrating a configuration example of a power converter device according to a third embodiment. Fig. Figure 9 shows a diagram representing a circuit configuration in an inverter circuit used in a power converter device according to a fourth embodiment. Description of embodiments
[0009] A power converter device according to embodiments of the present invention is described in detail below with reference to the accompanying drawings. The present invention is not limited to these embodiments. First embodiment.
[0010] Fig. Figure 1 shows a circuit diagram representing a configuration example of a power converter device according to a first embodiment. Fig. 1. The power converter device according to the first embodiment comprises an input circuit 2, an inverter circuit 3, and a control unit 7. The input circuit 2 includes at least one switch, a filter capacitor, and a filter inductor. The inverter circuit 3 comprises switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, and 6b2, and at least one motor 8 is connected to the inverter circuit 3. The control unit 7 generates and outputs a PWM signal for controlling the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, and 6b2. An example of the motor 8 connected to the inverter circuit 3 is an induction motor or a synchronous motor.
[0011] Furthermore, in Fig. One end of input circuit 2 is connected to an overhead line 50 via a current collector 51, and the other end is connected to a rail 52, which provides a ground potential via a wheel 53. Direct current or alternating current power is supplied from the overhead line 50 and fed to an input end of input circuit 2 via the current collector 51, and power generated at an output end of input circuit 2 is fed to inverter circuit 3.
[0012] In inverter circuit 3, switching element 4a1, which is a positive-side switching element, and switching element 4b1, which is a negative-side switching element, are connected in series to configure the first leg of a U-phase. Switching element 4a2, which is a positive-side switching element, and switching element 4b2, which is a negative-side switching element, are connected in series to form the second leg of the U-phase. The positive-side switching element is also called the "positive side arm" or "upper arm." The negative-side switching element is also called the "negative side arm" or "lower arm." Furthermore, the first leg of the U-phase is designated by U1, and the second leg of the U-phase is designated by U2.
[0013] Similar descriptions are also applied to the legs of a V-phase and a W-phase. Similarly, switching element 5a1 and switching element 5b1 are connected in series to configure a first leg of the V-phase, and switching element 5a2 and switching element 5b2 are connected in series to form a second leg of the V-phase. Switching element 6a1 and switching element 6b1 are connected in series to configure a first leg of the W-phase, and switching element 6a2 and switching element 6b2 are connected in series to configure a second leg of the W-phase. Similar to the U-phase, the first leg of the V-phase is designated by V1, the second leg of the V-phase by V2, the first leg of the W-phase by W1, and the second leg of the W-phase by W2.
[0014] In this way, inverter circuit 3 configures a three-phase inverter circuit in which the first leg and the second leg of each phase are connected in parallel. A MOSFET (metal-oxide-semiconductor field-effect transistor) containing an antiparallel diode, or an IGBT (insulated-gate bipolar transistor), is suitable as each of the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, and 6b2.
[0015] The control unit 7 performs PWM control on the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1 and 6b2 of the inverter circuit 3 by means of a PWM (pulse width modulation) signal. Through PWM control by the control unit 7, the inverter circuit 3 converts a DC voltage applied to the input circuit 2 into a variable AC voltage with a variable frequency to drive the motor 8.
[0016] Fig. Figure 2 shows a top view illustrating an arrangement of terminals of a semiconductor module 12 used in the semiconductor converter device according to the first embodiment, and Fig. Figure 3 shows a circuit diagram of the inverter circuit 3, which is located in the Fig. 1 is shown, on which the semiconductor module 12, which is in the Fig. 2 is shown, is loaded.
[0017] The semiconductor module 12, which is used in the power converter device according to the first embodiment, has a pair of semiconductor switching elements connected in series in a package 30, which is a module housing, although it is in Fig. 2 is not shown.
[0018] As in Fig. As shown in Figure 2, a first terminal M1, a second terminal M2, and a third terminal M3 are provided on one surface side of the package 30. The first terminal M1 configures a positive electrode terminal P in the semiconductor module 12, the second terminal M2 configures a negative electrode terminal N in the semiconductor module 12, and the third terminal M3 configures an AC terminal in the semiconductor module 12.
[0019] In Fig. 3 comprises a semiconductor module 12U1, which is driven by a U1 phase, the switching element 4a1, in which a MOSFET 4a1s, which is an example of a transistor element, and a diode 4a1d, which is operated as a so-called "freewheeling diode" (hereinafter FWD), are connected in antiparallel, and the switching element 4b1, in which a MOSFET 4b1s and an FWD 4b1d are connected in antiparallel. The switching element 4a1 and the switching element 4b1 are connected in series and included in the package 30, which is a module housing, and configure a switching element pair in the semiconductor module 12U1. A semiconductor module 12U2, which is driven by a U2 phase, is also configured in the same way as the semiconductor module 12U1. Furthermore, semiconductor modules 12V1, 12V2, 12W1 and 12W2 are each supplied with a V1 phase, a V2 phase, a W1 phase and a W2 phase and are also configured in the same way as the semiconductor module 12U1.As described above, each of the semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1 and 12W2 is a 2-in-1 module in which two switching elements are connected in series.
[0020] The drain, which is a positive electrode, of MOSFET 4a1s is electrically connected to the first terminal M1. A source, which is a negative electrode, of MOSFET 4b1s is electrically connected to the second terminal M2. A source, which is a negative electrode, of MOSFET 4a1s and a drain, which is a positive electrode, of MOSFET 4b1s are electrically connected to the third terminal M3. The first terminals M1 of the semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1, and 12W2 are electrically connected to a positive electrode side rail 11P, which is brought out from a positive electrode terminal P of the filter capacitor 10. The second terminals M2 of the semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1 and 12W2 are electrically connected to a negative electrode side rail 11N, which is provided by a negative electrode terminal N of the filter capacitor 10.The filter capacitor 10 is a capacitor that stores DC power needed for power conversion and is a power source in a power converter device.
[0021] Furthermore, the third terminal M3 of semiconductor module 12U1 and the third terminal M3 of semiconductor module 12U2 are electrically connected to each other to configure a U-phase AC connection and are electrically connected to a U-phase of motor 8. The third terminal M3 of semiconductor module 12V1 and the third terminal M3 of semiconductor module 12V2 are electrically connected to each other to configure a V-phase AC connection and are electrically connected to a V-phase of motor 8. The third terminal M3 of semiconductor module 12W1 and the third terminal M3 of semiconductor module 12W2 are electrically connected to each other to configure a W-phase AC connection and are electrically connected to a W-phase of motor 8.
[0022] Although in Fig. While three MOSFETs are shown as examples of switching elements 4a and 4b mounted on the semiconductor module 12U1, switching elements other than a MOSFET can be used. An example of a switching element other than a MOSFET is an IGBT or an IPM (Intelligent Power Module).
[0023] Again with reference to Fig. Section 2 describes the configuration of each connection in the semiconductor module 12. The package 30 of the semiconductor module 12 is rectangular. Two mounting points 32P are provided in the first connection M1, two mounting points 32N are provided in the second connection M2, and three mounting points 32AC are provided in the third connection M3. Because a plurality of mounting points are provided in the first connection M2, a second connection M2, and the third connection M3 as described above, shunting between chips in a module is improved, which has the advantageous effect of reducing the deviation of a heat-generating module. Before the number of mounting points 32P in the first connection M1 and the number of mounting points 32N in the second connection M2 is fixed to two, and the number of mounting points 32AC in the third connection M3 is fixed to three, the following applies: Fig. If the number of mounting points is fixed at terminal 2, it can be changed according to the current capacity. This means that the number of mounting points (32P) in the first terminal M1 and the number of mounting points (32N) in the second terminal M2 can be three or more. Furthermore, the number of mounting points (32AC) in the third terminal M3 can be two, four, or more.
[0024] The two fastening points 32P in the first terminal M1 are provided in a short-side section 33 located on one side of the packing 30, perpendicular to the longitudinal direction of the packing 30. The two fastening points 32N in the second terminal M2 are arranged parallel to the arrangement of the two fastening points 32P in the first terminal M1, on an inner side of the packing 30 than the first terminal M1, that is, closer to the center than the first terminal M1. The three fastening points 32AC in the third terminal M3 are provided in a short-side section 34 located on the opposite side of the packing 30, perpendicular to the longitudinal direction of the packing 30.These arrangements ensure that the respective attachment points in the first connection M1, the second connection M2 and the third connection M3 are arranged in symmetrical positions relative to each other with respect to a center line L1, which connects the short sides parallel to the longitudinal direction of the packing 30.
[0025] One of the mounting points 32P in the first terminal M1 and one of the mounting points 32N in the second terminal M2 are spaced apart by a distance d. The distance d is the distance required for insulation. The distance d can be determined according to the difference between a voltage applied to the first terminal M1 and a voltage applied to the second terminal M2, that is, a potential difference between the first terminal M1 and the second terminal M2.
[0026] The two fastening points 32P in the first terminal M1 are arranged as close as possible to a side 33a of the short side section 33 on one side of the package 30, such that an outer surface 35 of the fastening point 32P lies along a side 33a. Furthermore, in the short side section 34 on the other side of the package 30, a base section 36 is provided to allow the fastening of the three fastening points 32AC in the third terminal M3. The three fastening points 32AC in the third terminal M3 are arranged as close as possible to a longitudinal side 36a of the base section 36, such that an outer surface 37 of the fastening point 32AC lies along a side 36a.
[0027] By configuring the two mounting points 32P in the first terminal M1 and the three mounting points 32AC in the third terminal M3 in the manner described above, it is possible to ensure a mounting area for a semiconductor module to be accommodated in the package 30, while suppressing an increase in the size of the package 30 that is in the housing of the semiconductor module 12.
[0028] Although the first terminal M1 is located in an outer section of the package 30 and the second terminal M2 is located in an inner section of the package 30 in Fig. If the arrangement is 2, the arrangement relationship between them can be reversed. This means that the second connection M2 can be arranged in the outer section of the package 30 and the first connection M1 can be arranged in the inner section of the package 30.
[0029] Next, an arrangement of the six semiconductor modules in the power converter device according to the first embodiment is described, with reference to the Fig. 4. Fig. Figure 4 shows a diagram that schematically illustrates an arrangement example of six semiconductor modules in the power converter device according to the first embodiment.
[0030] The features of the arrangement of the six semiconductor modules in the power converter device according to the first embodiment are as follows. In the following descriptions, the first terminal M1 (P) is called the "positive electrode DC terminal", the second terminal M2 (N) is called the "negative electrode DC terminal", and the third terminal M3 (AC) is called the "alternating current terminal". (1) The positive electrode DC terminals of the two semiconductor modules, which configure semiconductor modules of the same phase, are arranged opposite each other. (2) If two semiconductor modules configuring semiconductor modules of the same phase are grouped together in a semiconductor module group, three semiconductor module groups are arranged in a direction perpendicular to one arrangement direction of the two semiconductor modules in the semiconductor module group. (3) Positive DC electrode terminals, negative DC electrode terminals and AC electrode terminals in the semiconductor module group are each arranged in symmetrical positions with respect to a center line L2 which is parallel to a short side of each semiconductor module. (4) Positive DC electrode terminals in the semiconductor modules of the same phase are arranged close to each other. A module-to-module distance d1 in the semiconductor modules of the same phase is smaller than a distance between the semiconductor module groups, meaning a module-to-module distance d2 in the semiconductor modules of different phases.
[0031] The features described above will be explained in more detail below. Fig. In section 4, semiconductor module 12W2, which configures the W2 phase, corresponds to semiconductor module 12W1, which configures the W1 phase, and which is rotated 180 degrees about an axis perpendicular to a plane in which semiconductor module 12W1 is arranged. This means that semiconductor module 12W1 and semiconductor module 12W2 have a rotationally symmetric relationship. Furthermore, semiconductor module 12W1 and semiconductor module 12W2 are mirror images of each other with respect to the center line L2. This means that semiconductor module 12W1 and semiconductor module 12W2 have a relationship of line symmetry.
[0032] The reason why both the ratio of rotational symmetry and the ratio of line symmetry, as described above, are satisfied is that the fastening points in the first terminal M1, the second terminal M2, and the third terminal M3 are arranged line-symmetrically with respect to the center line L1 of the packing 30, as shown in Fig. Figure 2 illustrates this. Therefore, the positive electrode DC terminals in the semiconductor modules of the same phase are opposite each other. The positive electrode DC terminals are terminals that change while maintaining the same potential relative to each other, regardless of whether the semiconductor module 12 is for the same phase or a different phase. The potentials also change when the inverter circuit performs three power conversion operations, while maintaining the same potential relative to each other. Therefore, the potential difference between the terminals theoretically becomes zero, allowing the opposite positive electrode DC terminals to be placed close together. Accordingly, the module-to-module distance d1 can be reduced.
[0033] The advantageous effects described above are also achieved in the same way if the negative electrode DC connections are arranged opposite each other in side sections.
[0034] Fig. Figure 5 shows a diagram illustrating a configuration example of the power converter device according to the first embodiment, mounted on a rail vehicle, showing a top view representing the interior of the power converter device as seen from above the vehicle in the direction of a rail. Fig. Figure 6 shows a planar view representing a connection state between a laminated connector strip and a semiconductor module.
[0035] As in Fig. As can be seen in Figure 5, the power converter device is configured to include an air opening 60, a gate control unit 67, a circuit breaker and I / F unit 68, and an inverter assembly 70. The inverter assembly 70 includes a gate driver circuit board 40, a filter capacitor 10, an element section 42, and a laminated busbar 44. When this power converter device is actually mounted in a vehicle, components other than the fan 65—that is, the gate control unit 67, the circuit breaker and / or I / F unit 68, and the inverter assembly 70—are enclosed in a housing 66 and shielded from outside air. The fan 65 is mounted on the outside of the housing 66 and exposed to outside air, allowing it to be cooled by cooling air.
[0036] Element section 42 is a component that comprises a majority of the semiconductor modules 12, which are in Fig. 2 are shown. Fig. Figure 5 represents the semiconductor modules 12W1 and 12W2 as element section 42. The gate driver circuit board 40 is a circuit board with a gate driver circuit 40a mounted on it. The gate driver circuit 40a generates a driver signal required for PWM driving of the semiconductor modules 12 as element section 42. The interrupter and / or I / F unit 68 is a component that has the function of interrupting a current flow to the inverter device 70 and a function of transmitting and receiving a signal between the gate control unit 67 and the gate driver circuit 40a.
[0037] The filter capacitor 10 and the semiconductor modules 12 configure the element section 42 and are connected to each other via the laminated conductor rail 44, which is formed in an L-shape. The laminated conductor rail 44 is a component comprising a thin metal plate and an insulating element, which are integrally covered by a laminated material. Fig. Figure 5 represents a first conductor section 44a, which forms the thin metal plate, and a second conductor section 44b. A multilayer conductor rail that is not covered by a laminated material can be used instead of the laminated conductor rail 44.
[0038] As in Fig. As shown in Figure 6, the first conductor section 44a in the laminated conductor rail 44 is electrically connected to positive electrode DC terminals and semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1 and 12W2, and the second conductor section 44b is electrically connected to the negative electrode DC terminals of the semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1 and 12W2.
[0039] Furthermore, as in Fig. As shown in Figure 5, the first conductor section 44a in the laminated conductor rail 44 is electrically connected to a positive electrode terminal 10a of the filter capacitor 10, and the second conductor section 44b in the laminated conductor rail 44 is electrically connected to a negative electrode terminal 10b of the filter capacitor 10. Through these connections, each of the semiconductor modules 12U1, 12U2, 12V1, 12V2, 12W1, and 12W2 that configure section 42 and filter capacitor 10 is electrically connected to each other.
[0040] To change the circuit configuration, which is in Fig. 1 and Fig. To implement the configuration shown in Figure 3, it is sufficient to connect the AC terminals of the semiconductor modules of the same phase together, although this is not possible in the Fig. 5 and Fig. 6 is not shown. In this case, the configuration of the laminated conductor rail 44, which is in Fig. 5 and Fig. 6 is shown, can be changed and used, or a laminated conductor rail different from the laminated conductor rail 44, or a conductor-conductor rail can be used.
[0041] As described above, according to the power converter device of the first embodiment, in a semiconductor module group formed by two semiconductor modules, the semiconductor modules of the same phase are configured among six semiconductor modules. The first or second terminals of the two semiconductor modules are arranged opposite each other. Furthermore, three semiconductor module groups are arranged in a direction perpendicular to one of the arrangement directions of the two semiconductor modules in the semiconductor module group. Therefore, the distance between two parallel semiconductor modules can be made small, making it possible to further miniaturize the power converter device with an inverter circuit. Second embodiment.
[0042] Fig. Figure 7 shows a diagram schematically illustrating an example arrangement of six semiconductor modules in a power converter device according to a second embodiment. In the first embodiment, positive electrode DC terminals in two semiconductor modules, which configure semiconductor modules of the same phase, are arranged opposite each other, as shown in Figure 7. Fig. 4 is shown. On the other hand, in the second embodiment, AC terminals in two semiconductor modules, which configure semiconductor modules of the same phase, are arranged opposite each other, as shown in Fig. Figure 7 is shown. Other configurations of the second embodiment are similar or equivalent to those of the first embodiment, and similar or equivalent forming elements to those of the first embodiment are provided with similar reference numerals, and redundant explanations thereof are omitted.
[0043] In addition to the features described above, the configuration of the second embodiment has the following features. (1) Similar to the configuration of the first embodiment, three semiconductor module groups are arranged in a direction perpendicular to an arrangement direction of the two semiconductor modules in the semiconductor module group. (2) Positive DC electrode terminals, negative DC electrode terminals and AC electrode terminals in the semiconductor module group are each arranged at symmetrical positions with respect to a center line L3 which is parallel to a short side of each semiconductor module. (3) AC terminals in the semiconductor modules in the same phase are arranged close together. A module-to-module distance d3 in the semiconductor modules of the same phase is smaller than the distance between the semiconductor module groups, meaning a module-to-module distance d4 in the semiconductor modules of different phases.
[0044] In the configuration of the second embodiment, the AC terminals of the same phase are terminals that change while maintaining the same potential relative to each other. The potentials also change when the inverter circuit 3 performs a power conversion operation, while maintaining the same potential relative to each other. Therefore, the potential difference between the terminals theoretically becomes zero, allowing the opposing AC terminals to be located close to each other. Consequently, the module-to-module distance d3 can be reduced.
[0045] As described above, according to the power converter device of the second embodiment, in a semiconductor module group formed by two semiconductor modules, the semiconductor modules of the same phase are configured among the six semiconductor modules, with the third terminals of the two semiconductor modules arranged opposite each other. Furthermore, three semiconductor module groups are arranged in a direction perpendicular to one of the arrangement directions of the two semiconductor modules in the semiconductor module group. Therefore, the distance between two parallel semiconductor modules can be made small, making it possible to further reduce the size of the power converter device, which includes an inverter circuit. Third embodiment.
[0046] While the first and second embodiments were described in a case in which the semiconductor module 12, which is in Fig. Figure 2 shows that the inverter circuit 3 is acted upon. A third embodiment describes a case in which the semiconductor module 12, which is in Fig. 2 is shown, applied to an inverter circuit.
[0047] Fig. Figure 8 shows a diagram illustrating a configuration example of a power converter device according to the third embodiment. The power converter device according to the third embodiment, which is described in Fig. Figure 8 is a configuration example of a power converter device applied to an electric vehicle which has an AC input and is configured to include a converter circuit 20, the filter capacitor 10 and the inverter circuit 3.
[0048] In Fig. An alternating current voltage is collected from the overhead line 50 via the current collector 51 and transformed down by a transformer 56. It is then converted into a direct current voltage by the inverter circuit 20. The converted direct current voltage passes through the filter capacitor 10, is converted by the inverter circuit 3 into an arbitrary alternating current voltage of any desired frequency, and is applied to the motor 8 to drive it.
[0049] The inverter circuit 20, which is located in the Fig. Figure 8 also has a configuration in which each phase has two legs, each configured by a positive-side switching element and a negative-side switching element connected in series, similar to the first embodiment. Therefore, by configuring the converter circuit 20 to utilize four semiconductor modules 12U1, 12U2, 12V1 and 12V2 in the configuration of Fig. 4 or Fig. 7. The size of the converter circuit 20 can be reduced.
[0050] As described above, according to the power converter device of the third embodiment, in a semiconductor module group formed by two semiconductor modules, the semiconductor modules of the same phase are configured among the four semiconductor modules, with the first, second, or third terminals of the two semiconductor modules arranged opposite each other. Therefore, the distance between two parallel semiconductor modules can be reduced, making it possible to further reduce the size of the power converter device with a converter circuit. Fourth embodiment.
[0051] The first and second embodiments were described in a case in which one or more motors 8 were driven by using a three-phase inverter circuit in which a first leg and a second leg of each phase are connected in parallel to each other, as in the inverter circuit 3. In a fourth embodiment, a case is described in which one or a plurality of motors 8 are driven by using two three-phase inverter circuits that are configured in parallel to each other without connecting the first leg and the second leg.
[0052] Fig. Figure 9 shows a diagram representing a circuit configuration of an inverter circuit 3A used in a power converter device according to the fourth embodiment. Similar or equivalent forming elements to those of the first embodiment, which are used in Fig. 1 or Fig. The items shown in section 3 are designated by similar reference symbols.
[0053] The inverter circuit 3A, which is located in the Fig. The circuit shown in 9 is identical to the inverter circuit 3, which is shown in Fig. 1 or Fig. 3 is shown in that it has the switching elements 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1 and 6b2, but differs in that the first leg and the second leg of each phase are not connected parallel to each other.
[0054] Fig. Figure 9 represents a configuration in which one of the three-phase inverter circuits, which configures inverter circuit 3A, drives a motor 8a, and the other three-phase inverter circuits, which configure inverter circuit 3A, drive a motor 8b. However, the motors 8a and 8b can be a single unit or multiple units. Similarly, in the first embodiment, the motor 8 driven by inverter circuit 3 can be a single unit or multiple units. This point is common to both the first and fourth embodiments.
[0055] The arrangement example, which is in Fig. 4 or Fig. As shown in Figure 7, this can also be used in the configuration of the inverter circuit 3A, which is located in the Fig. Figure 9 is applied. Furthermore, in this case, the circuit configuration is such that a drain of a positive electrode switching element is electrically connected to the positive electrode side bus 11P and a source of a negative electrode side switching element is electrically connected to the negative electrode side bus 11N, as shown in the circuit diagram in Fig. 9 shown. Therefore, it is possible to connect the semiconductor modules 12 and the filter capacitor 10 by connecting the laminated conductor rail 44 as shown in the Fig. 5 and Fig. 6 is used.
[0056] The configurations described in the preceding embodiments are merely examples of the content of the present invention. These configurations can be combined with other known techniques, and any part of each configuration can be omitted or modified without departing from the scope of the present invention. Reference numeral list 2 Input circuit, 3, 3A
[0057] Inverter circuit, 4a1, 4a2, 5a1, 5a2, 6a1, 6a2, 4b1, 4b2, 5b1, 5b2, 6b1, 6b2 Switching element, 7 Control unit, 8, 8a, 8b Motor, 10 Filter capacitor, 10a Positive electrode connection, 10b Negative electrode connection, 11P Positive electrode side rail, 11N Negative electrode side rail, 12, 12U1, 12U2, 12V1, 12V2, 12W1, 12W2 Semiconductor module, 20 Inverter circuit, 30 Packing, 32P, 32N, 32AC Mounting point, 33, 34 Short side section, 33a, 35, 36a, 37 Side, 36 Base section, 40 Gate driver circuit board, 40a Gate driver circuit, 42 Element section, 44 Laminated bus rail, 44a First conductor section, 44b Second conductor section, 50 Overhead line, 51 Current collector, 52 Rail, 53 Wheel, 56 Transformer, 65 Fan, 66 Housing, 67 Gate control unit, 68 Interrupter and I / F unit, 70 Inverter device.
Claims
Power converter device utilizing a semiconductor module (12) comprising a pair of semiconductor switching elements (4a1, 4b1, 4a2, 4b2, 5a1, 5b1, 5a2, 5b2, 6a1, 6b1, 6a2, 6b2) connected in series, the power converter device comprising the semiconductor modules (12) in an even number of four or more, the semiconductor module (12) having a first terminal (M1), a second terminal (M2) and a third terminal (M3) on its surface, wherein a plurality of attachment points (32P, 32N, 32AC) are provided in the first terminal (M1), the second terminal (M2) and the third terminal (M3), and wherein a positive electrode of a positive-side switching element (4a1, 4a2, 5a1, 5a2, 6a1, 6a2) is electrically connected to the first terminal (M1), a negative electrode of a negative side switching element (4b1, 4b2, 5b1, 5b2, 6b1,6b2) is electrically connected to the second terminal (M2) and a negative electrode of the positive-side switching element (4a1, 4a2, 5a1, 5a2, 6a1, 6a2) and a positive electrode of the negative-side switching element (4b1, 4b2, 5b1, 5b2, 6b1, 6b2) are electrically connected to the third terminal (M3), first terminals (M1), second terminals (M2) or third terminals (M3) of two semiconductor modules (12) that configure a semiconductor module group of the same phase among the semiconductor modules (12), the number of which is an even number of four or more, are arranged opposite each other, and a plurality of the semiconductor module groups are arranged in a direction perpendicular to an arrangement direction of two semiconductor modules (12) in the semiconductor module group, wherein the first terminals (M1), second terminals (M2) and third terminals (M3) in the semiconductor module group are each in symmetrical positions with respect to are arranged on a center line (L2, L3),where the center line (L2, L3) is parallel to a short side of each semiconductor module (12). Power converter device according to claim 1, wherein the number of semiconductor modules (12) is six, and the six semiconductor modules (12) are used to configure a three-phase inverter circuit (3) comprising two semiconductor modules (12) connected in parallel for each phase. Power converter device according to claim 1, wherein the number of semiconductor modules (12) is four, and the four semiconductor modules (12) are used to configure a converter circuit (20) comprising two semiconductor modules (12) connected in parallel for each phase. Power converter device according to claim 1, wherein the number of semiconductor modules (12) is six, and the six semiconductor modules (12) are used to configure two three-phase inverter circuits (3A). Power converter device according to one of claims 1 to 4, wherein the first connection (M1) is a positive electrode DC connection, the second connection (M2) is a negative electrode DC connection, and the third connection (M3) is an AC connection. Power converter device according to one of claims 1 to 5, wherein the plurality of mounting points (32P) in the first terminal (M1) is arranged in a short side section on one side of a module housing (30) in a direction perpendicular to a longitudinal direction of the module housing (30), the plurality of mounting points (32N) in the second terminal (M2) is arranged parallel to the arrangement of the plurality of mounting points (32P) in the first terminal (M1) on an inner side of the module housing (30) as the first terminal (M1), and the plurality of mounting points (32AC) in the third terminal (M3) is arranged in a short side section on the other side of the module housing (30) in a direction perpendicular to the longitudinal direction of the module housing (30).
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