Semiconductor device and power conversion device

Abstract

Semiconductor device comprising: an electronic circuit (7) containing a semiconductor element (4); a metal electrode (5) which is directly connected to the electronic circuit; and a resin (6) that encapsulates the electronic circuit and the metal electrode, wherein an end part region (5a) of the metal electrode on a surface opposite a surface facing the electronic circuit is acute-angled and an end part region (5b) of the metal electrode on the surface facing the electronic circuit is arc-shaped or obtuse-shaped.

Description

Technical area

[0001] The present invention relates to a semiconductor device in which a resin encapsulates a metal electrode, and a power conversion device including the same. Background technology

[0002] Packaged or transfer-molded power modules, in which resins encapsulate metal electrodes, tend to have a structure for directly bonding a semiconductor element or circuit surface to a metal electrode to support high reliability and high current. Although the reliability of bonding the semiconductor element to the metal electrode is high in this structure, differences in the thermal expansion coefficient between the semiconductor element, the circuit surface on which the semiconductor element is mounted, and the metal electrode cause thermal stresses, reducing reliability under a thermal environment.

[0003] Various technologies have been proposed to reduce the effect of thermal stress. For example, according to the technology of Patent Document 1, an edge portion of a metal electrode is chamfered or rounded. Such a structure can relieve thermal stress that tends to concentrate on a side portion of the metal electrode and reduce cracks in a resin.

[0004] US 2016 / 0111379 A1 discloses a semiconductor device comprising a semiconductor element having a lower surface connected to an insulating substrate side, and a plate-shaped lead terminal connected to an upper surface of the semiconductor element and having a horizontally extending portion. The horizontally extending portion in the lead terminal is connected to the semiconductor element and includes a linearly extending portion in a plan view. The semiconductor device further comprises a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal.A linear expansion coefficient of the sealing resin shows a value between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion.

[0005] US 2010 / 0320592 A1 discloses a semiconductor device comprising electrodes, a semiconductor chip bonded to the upper surface of the electrode formed in the shape of an island, a thin metal line connecting the semiconductor to the chip and the electrode, a thin metal line connecting the semiconductor chip and the electrode, and a sealing resin mechanically supporting these elements by sealing them integrally.

[0006] US 2017 / 0018495 A1 discloses a semiconductor device comprising a ceramic plate; a semiconductor element for electric power on whose surface an electrode is formed and whose other surface is connected to the ceramic plate; a lead terminal whose one end side is connected to the electrode and whose other end side is to be electrically connected to an outside thereof; and a sealing member by which the semiconductor element for electric power is sealed together with a part in the lead terminal connected to the electrode; wherein, near one end on the one end side of the lead terminal, an inclined surface is formed which becomes farther away from the circuit board as it approaches the end. State-of-the-art documentPatent document

[0007] [Patent Document 1] JP H02-240 955 A SummaryProblem to be solved by the invention

[0008] The pursuit of higher current and lower inductance in such a structure requires modifications such as thickening metal electrodes and bringing the metal electrodes closer to semiconductor elements. However, differences in thermal expansion coefficients between semiconductor elements or insulating substrates made of, for example, ceramics (e.g., 4 ppm / K) and metal electrodes (e.g., 17 ppm / K in copper) are relatively large. Making such modifications relatively increases the stresses to which resins are subjected by the metal electrodes. Thus, even if the edge portion is chamfered or rounded according to the technology of Patent Document 1, cracks in the resin cannot be prevented. Furthermore, there was a problem of cracks occurring in a desired portion.

[0009] Although bringing the thermal expansion coefficient of an encapsulating resin closer to that of a metal electrode can reduce cracks in the resin around the metal electrode, the difference in the thermal expansion coefficient between the encapsulating resin and an insulating substrate increases. Consequently, the encapsulating resin detaches from the insulating substrate, causing a problem of reduced reliability of a semiconductor device. Although adding a silicone plasticizer to the encapsulating resin can increase the stress resistance of the encapsulating resin, a problem of increased cost of the encapsulating resin arises.

[0010] Accordingly, in view of the problems, the present invention has been conceived, and the object is to provide a technique that can prevent cracks from occurring in an undesirable portion in a resin. Means of solving the problem

[0011] This problem is solved by the features of the independent claims. The subclaims contain advantageous embodiments of the invention. Effects of the invention

[0012] According to the present invention, an end portion of the metal electrode on a surface opposite to a surface facing the electronic circuit is acute-angled, and an end portion of the metal electrode on the surface facing the electronic circuit is arcuate or blunt-shaped. This structure can prevent cracks from occurring in an undesirable portion in a resin.

[0013] The object, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings. Short description of the drawings Fig. 1 is a cross-sectional view schematically illustrating a structure of a relevant semiconductor device. Fig. 2 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 1. Fig. 3 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 2. Fig. 4 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 3. Fig. 5 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 4. Fig. 6 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 5. Fig. 7 is a cross section schematically illustrating a structure of a semiconductor device according to Embodiment 5. Fig. 8 is a block diagram illustrating a configuration of a power conversion system to which a power conversion device according to Embodiment 6 is applied. Description of Embodiments[Relevant Semiconductor Device]

[0014] Before describing semiconductor devices according to embodiments of the present invention, a semiconductor device relevant to these semiconductor devices (hereinafter referred to as “relevant semiconductor device”) will be described.

[0015] Fig. 1 is a cross-sectional view schematically illustrating a structure of the relevant semiconductor device. As shown in Fig. As illustrated in Figure 1, an insulating substrate 2 is arranged on a base plate 1. The insulating substrate 2 includes metal components 2a, such as a circuit pattern. A semiconductor element 4 is bonded to the metal component 2a of the insulating substrate 2 via a bonding material such as solder 3a. A metal electrode 5 is bonded to the semiconductor element 4 via a bonding material such as solder 3b. An encapsulating resin 6 encapsulates the semiconductor element 4 and the metal electrode 5.

[0016] Here, both the end portions 5a on the upper surface of the metal electrode 5 and the end portions 5b on the lower surface of the metal electrode 5 are rounded. This structure can relieve the stress concentration exerted by the side surfaces of the metal electrode 5 on the encapsulating resin 6.

[0017] However, in a semiconductor device where higher current and lower inductance are desired, even the structure of Fig. 1 cannot prevent cracks from occurring in the encapsulation resin 6. Furthermore, an undesirable portion, for example, a portion surrounding the semiconductor element 4, may have the cracks, causing a problem of reducing the reliability of the semiconductor device. In contrast, the semiconductor devices according to embodiments can solve such a problem. [Embodiment 1]

[0018] Fig. Figure 2 is a cross-sectional view schematically illustrating a structure of a semiconductor device according to Embodiment 1 of the present invention. The constituent elements of the semiconductor device according to Embodiment 1 are denoted by the same reference numerals as the relevant semiconductor device if they are identical to or similar to the constituent elements of the relevant semiconductor device.

[0019] The semiconductor device of Fig. 2 includes the base plate 1, the insulating substrate 2, the solder metals 3a and 3b, the semiconductor element 4, the metal electrode 5, and the encapsulating resin 6, which is a resin. For example, this semiconductor device is used for an inverter that controls a motor of a consumer appliance, an electric car, or an electric train, or for a regenerative converter.

[0020] The insulating substrate 2 is arranged on the base plate 1. The base plate 1 contains, for example, copper (Cu). The insulating substrate 2 contains, for example, a ceramic. The insulating substrate 2 can be mounted on the base plate 1 without being integrated with the base plate 1, or can be integrated with the base plate 1. Furthermore, the back surface of the base plate 1 does not have to be a flat surface, but can be a surface into which a cooler, such as pin fins, is integrated.

[0021] The insulating substrate 2 includes metal components 2a, such as a circuit pattern. The semiconductor element 4 is bonded to the metal component 2a of the insulating substrate 2 via a bonding material, such as solder 3a.

[0022] An electronic circuit 7 is a circuit comprising the base plate 1, the insulating substrate 2, the solder metals 3a and 3b and the semiconductor element 4, and is directly connected to the metal electrode 5.

[0023] The metal electrode 5 is arranged above the semiconductor element 4 and is electrically connected to the semiconductor element 4 via the solder 3b. The metal electrode 5 is, for example, an electrode terminal and contains at least one of copper, aluminum, and other metal materials. The circuit structure and the semiconductor element 4, and the semiconductor element 4 and the metal electrode 5, are bonded with, but not limited to, a solder. These can be bonded with, for example, silver (Ag).

[0024] The upper surface of the metal electrode 5 is a surface opposite to the surface facing the electronic circuit 7, and the lower surface of the metal electrode 5 is the surface facing the electronic circuit 7 according to Embodiment 1. Furthermore, the end portions 5a on the upper surface of the metal electrode 5 are pointed, and the end portions on the lower surface of the metal electrode 5 are tapered, i.e., blunt-shaped. The end portions 5b of the metal electrode 5 may be rounded, i.e., arcuate, instead of tapered.

[0025] The encapsulating resin 6 encapsulates the electronic circuit 7 and the metal electrode 5. Accordingly, the encapsulating resin 6 fills the surrounding areas of the semiconductor element 4 and the metal electrode 5. [Conclusion of Embodiment 1]

[0026] Once the metal electrode 5 is heated or generates heat due to temperature cycling or power cycling, the metal electrode 5 expands, but the encapsulating resin 6 in contact with the semiconductor element 4 and the insulating substrate 2, whose thermal expansion coefficients are lower, is retained by the semiconductor element 4 and the insulating substrate 2. Consequently, the encapsulating resin 6 is subjected to stress from the metal electrode 5. Here, the encapsulating resin 6 is less subjected to the intense stress from the blunt-shaped end portions 5b and more subjected to the intense stress from the pointed-shaped end portions 5a.

[0027] Thus, even if cracks occur in the encapsulating resin 6, cracks 8 are preferentially generated that are relatively distant from the electronic circuit 7 and start from the end portions 5a. After the cracks 8 start from the end portions 5a, the stress to which the encapsulating resin 6 is subjected by the metal electrode 5 decreases. Consequently, cracks can be prevented from occurring near the electronic circuit 7.

[0028] Consequently, a cracked portion in the semiconductor device according to Embodiment 1 can be controlled, and cracks can be prevented from occurring in an undesirable portion and in an undesirable direction such as the surrounding area of ​​the semiconductor element 4.

[0029] As a result, cracking in the semiconductor element 4 can be prevented, and the reliability and durability of a semiconductor device under a thermal environment can be increased. Furthermore, for example, there is no need to specifically tune the properties of the encapsulating resin 6 and add coding to the end surface of the metal electrode 5 to relieve stress, which can reduce an increase in cost. Furthermore, press working, which can easily change the shape of a machined object by changing the design of a progressive die stage, can form the metal electrode 5. Thus, additional costs of a product can be reduced. Furthermore, the above-mentioned measures should be taken only on a minimal portion necessary for reliability.Consequently, there is no need to precisely manage resin properties that can affect reliability or any design parameter in an assembly process. As a result, a reduction in management costs and scrap rates can be expected.

[0030] The semiconductor element 4 may include silicon (Si) or a wide-bandgap semiconductor such as silicon carbide (SiC) or gallium nitride (GaN). In particular, the wide-bandgap semiconductor exhibits high-temperature resistance. Consequently, increasing reliability under a thermal environment is particularly effective in a structure in which the semiconductor element 4 of the semiconductor device includes the wide-bandgap semiconductor. Furthermore, the semiconductor element 4 may be, for example, a MOSFET, an IGBT, an SBD, or a PN diode. [Embodiment 2]

[0031] Fig. 3 is a cross-sectional view schematically illustrating a structure of a semiconductor device according to Embodiment 2 of the present invention. The same reference numerals are assigned to the constituent elements according to Embodiment 2 if the constituent elements are identical to or similar to the above-mentioned constituent elements, and the various constituent elements will be primarily described.

[0032] The semiconductor device of the Fig. 3 includes the base plate 1, the insulating substrate 2, the solder metals 3a and 3b, the semiconductor element 4, the metal electrode 5, the encapsulating resin 6 which is a resin, and a wire 9 which is a circuit element.

[0033] The wire 9 is, for example, an aluminum wire and is connected to the semiconductor element 4. The metal electrode 5 is arranged laterally to the wire 9 and above the semiconductor element 4 and is electrically connected to the wire 9 via the semiconductor element 4 and the solder 3b.

[0034] The electronic circuit 7 is a circuit comprising the base plate 1, the insulating substrate 2, the solder metals 3a and 3b, the semiconductor element 4, and the wire 9, and is directly connected to the metal electrode 5. The encapsulating resin 6 encapsulates the electronic circuit 7 and the metal electrode 5.

[0035] According to Embodiment 2, a lateral portion 5c of the metal electrode 5, which is a portion opposite to the side facing the wire 9, is pointed, and a lateral portion 5d of the metal electrode 5, which is a portion facing the wire 9, is rounded, that is, arcuate. The lateral portion 5d can be chamfered or approximately rounded by modeling in a bending process during a pressing process similar to Embodiment 3 to be described later. Although the central portion of the lateral portion 5c in a thickness direction in Fig. 3 is pointed, the end portions on the upper surface of the metal electrode 5 can be formed similarly to the embodiment 1 ( Fig. 2) be pointed. [Conclusion of Embodiment 2]

[0036] In the semiconductor device according to Embodiment 2, similar to Embodiment 1, the cracks 8 that are relatively distant from the wire 9 and originate from the lateral portion 5c can be preferentially generated. Consequently, cracks can be prevented from occurring in an undesirable portion such as the surrounding area of ​​the wire 9. As a result, breakage in the wire 9 can be prevented, and the reliability and durability of the semiconductor device can be increased. [Embodiment 3]

[0037] Fig. 4 is a cross-sectional view schematically illustrating a structure of a semiconductor device according to Embodiment 3 of the present invention. The same reference numerals are assigned to the constituent elements according to Embodiment 3 if the constituent elements are identical to or similar to the above-mentioned constituent elements, and the various constituent elements will be primarily described.

[0038] In the semiconductor device of Fig. 4 have partial areas of the metal electrode 5, the edges 5e in Fig. 2 (portions in close proximity to the edges 5e) have an upwardly bent shape. In other words, the portions of the metal electrode 5 in close proximity to the edges 5e have a raised shape. Consequently, the end portions 5b on the lower side are approximately rounded by modeling in a bending process during a pressing process. These shapes can be formed, for example, by bending a flat metal electrode by pressing it. However, the shapes can be formed by, but are not limited to, thinning a central portion 5f of the metal electrode by means of a machining process such as cutting. [Conclusion of Embodiment 3]

[0039] In the semiconductor device according to Embodiment 3, end portions 5a on the upper surface where the cracks 8 are likely to occur can be located farther from the semiconductor element 4 than those according to Embodiment 1. Consequently, the cracked portion can be controlled more effectively, and the reliability and durability of the semiconductor device can be further increased. In addition, the stresses generated when products are assembled via, for example, a soldering process can generally generate the bending stress that causes the expansion of the metal electrode 5 in a depth direction of Fig. 4. In contrast, since the shape of Fig. 4 according to Embodiment 3 can increase the strength against bending stress, prevent deformation of the metal electrode 5, and improve product quality. [Embodiment 4]

[0040] Fig. 5 is a plan view illustrating a structure of the metal electrode 5 of a semiconductor device according to Embodiment 4 of the present invention. The same reference numerals are assigned to the constituent elements according to Embodiment 4 if the constituent elements are identical to or similar to the above-mentioned constituent elements, and the various constituent elements will be primarily described.

[0041] As in Fig. 5, according to Embodiment 4, the metal electrode 5 includes protruding parts 5g, and the electronic circuit 7, which includes the semiconductor element 4 and the wires 9, is arranged in a direction other than the orientation direction of the tips of the protruding parts 5g. Although the protruding parts 5g in Fig. 5 are approximately triangular, they may, for example, be arrow-shaped. Although the tips of the protruding parts 5g are oriented toward the plane direction of the metal electrode 5 and the protruding parts 5g are arranged at respective positions to orient the semiconductor element 4 and the wires 9 in plan view in Fig. 5 in a sandwich-like manner, the protruding parts 5g are not limited to these. For example, the protruding parts 5g should be arranged in a partial area where the cracks 8 are preferably and desirably generated. [Conclusion of Embodiment 4]

[0042] According to Embodiment 4, the cracked portion can be more effectively controlled. Furthermore, the cracks can be generated in a distributed manner, and each crack can be reduced in size. [Embodiment 5]

[0043] Fig. 6 is a plan view schematically illustrating a structure of the metal electrode 5 of a semiconductor device according to Embodiment 5 of the present invention. The same reference numerals are assigned to the constituent elements according to Embodiment 5 if the constituent elements are identical to or similar to the above-mentioned constituent elements, and the various constituent elements will be primarily described.

[0044] As in Fig. 6 according to Embodiment 5, the metal electrode 5 is inclined toward the semiconductor element 4 such that the lateral portion 5c of the metal electrode 5, which is a portion opposite to the side facing the wire 9, is closer to the semiconductor element 4 than the lateral portion 5d of the metal electrode 5, which is a portion facing the wire 9. [Conclusion of Embodiment 5]

[0045] The difference in thermal expansion coefficient between the metal electrode 5 and the semiconductor element 4 has a relatively large influence on the lateral portion 5c of the metal electrode 5, which is closer to the semiconductor element 4, and has a relatively small influence on the lateral portion 5d of the metal electrode 5, which is farther from the semiconductor element 4. Since the stress to which the encapsulating resin 6 is subjected from the lateral portion 5c of the metal electrode 5 is greater than the stress to which the encapsulating resin 6 is subjected from the lateral portion 5d of the metal electrode 5, the cracks 8, which are relatively far from the wire 9 and start from the lateral portion 5c, can be preferentially generated. Consequently, the cracked portion can be controlled more effectively.

[0046] Although the structure in which Embodiment 5 is applied to Embodiment 2 is described above, Embodiment 5 can be applied to the other Embodiments 1, 3 and 4 and to the relevant semiconductor device as shown in Fig. 7 illustrated. [Embodiment 6]

[0047] A power conversion device according to Embodiment 6 of the present invention is a power conversion device including a main conversion circuit including the semiconductor device according to any one of Embodiments 1 to 5. Although the above-mentioned semiconductor devices are not limited to specific power conversion devices, Embodiment 6 will describe a use of the semiconductor device according to any one of Embodiments 1 to 5 for a three-phase inverter.

[0048] Fig. 8 is a block diagram illustrating a configuration of a power conversion system to which the power conversion device according to Embodiment 6 is applied.

[0049] The Fig. The power conversion system illustrated in Figure 8 includes a power supply 100, a power conversion device 200, and a load 300. The power supply 100, which is a DC power supply, provides DC power to the power conversion device 200. The power supply 100 may be any of various power supplies, including a DC system, a solar battery, a rechargeable battery, a rectifier circuit connected to an AC system, and an AC / DC converter. The power supply 100 may also be a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0050] The power conversion device 200, which is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied by the power supply 100 into AC power to supply the AC power to the load 300. As shown in Fig. 8, the power conversion device 200 includes a main conversion circuit 201 that converts the DC power into the AC power, and a control circuit 203 that outputs to the main conversion circuit 201 a control signal for controlling the main conversion circuit 201.

[0051] The load 300 is a three-phase electric motor driven by the AC power provided by the power conversion device 200. The load 300 is not limited to a specific use, but is an electric motor mounted on various types of electrical devices. Consequently, the load 300 is used as an electric motor for, for example, a hybrid car, an electric car, a rail vehicle, an elevator, or an air conditioner.

[0052] The power conversion device 200 will be described in detail below. The main conversion circuit 201 includes switching elements and freewheeling diodes (not shown). Switching the switching element causes the DC power supplied by the power supply 100 to be converted into AC power. The AC power is then supplied to the load 300. The specific circuit configuration of the main conversion circuit 201 is of various types. The main conversion circuit 201 according to Embodiment 6 is a three-phase, two-level, full-bridge circuit and may include six switching elements and six freewheeling diodes connected in anti-parallel to the respective switching elements. At least one of the switching elements and the freewheeling diodes of the main conversion circuit 201 includes a semiconductor module 202 for which the semiconductor device according to any one of Embodiments 1 to 5 is used.The six switching elements form three pairs of upper and lower arms, with the two switching elements in each pair connected in series. The three pairs of upper and lower arms form the respective phases (U-phase, V-phase, and W-phase) of the full-bridge circuit. The output terminals of the respective pairs of upper and lower arms, i.e., three output terminals, of the main conversion circuit 201 are connected to the load 300.

[0053] The main conversion circuit 201 includes a drive circuit (not shown) for driving each of the switching elements. The drive circuit may be embedded in the semiconductor module 202 or may be provided separately from the semiconductor module 202. The drive circuit generates drive signals for driving the switching elements of the main conversion circuit 201 and provides the drive signals to control electrodes of the switching elements of the main conversion circuit 201. Specifically, the drive circuit outputs the drive signal for switching the switching element to an ON state and the drive signal for switching the switching element to an OFF state to the control electrodes of the switching elements according to the drive signal from the control circuit 203 to be described later.The drive signal is a voltage signal (ON signal) that is equal to or higher than the threshold voltage of the switching element when the switching element is kept in the ON state. The drive signal is a voltage signal (OFF signal) that is equal to or lower than the threshold voltage of the switching element when the switching element is kept in the OFF state.

[0054] The control circuit 203 controls the switching elements of the main conversion circuit 201 so that a desired power is supplied to the load 300. Specifically, the control circuit 203 calculates a time (ON time) at which each of the switching elements of the main conversion circuit 201 must enter the ON state based on the power that must be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by performing pulse width modulation (PWM) control to modulate the ON time of the switching elements according to the voltage that must be supplied.The control circuit 203 then outputs a control instruction (control signal) to the drive circuit included in the main conversion circuit 201, so that the drive circuit outputs the ON signal to the switching element that needs to enter the ON state and the OFF signal to the switching element that needs to enter the OFF state at any time. The drive circuit outputs the ON signal or the OFF signal as the drive signal to the control electrode of each of the switching elements according to this control signal.

[0055] Since the semiconductor device according to any one of Embodiments 1 to 5 is used as at least one of the switching elements and the freewheeling diodes of the main conversion circuit 201 in the power conversion device according to Embodiment 6, cracks can be prevented from occurring in an undesirable portion in a resin.

[0056] Although Embodiment 6 describes the example of using the semiconductor device according to any one of Embodiments 1 to 5 for the three-phase inverter having the two levels, Embodiment 6 is not limited to this but can be applied to various power conversion devices. Although Embodiment 6 describes the semiconductor device according to any one of Embodiments 1 to 5 as the power conversion device having the two levels, the power conversion device may have three or more levels. In addition, the semiconductor device can be used for a single-phase inverter when power is supplied to a single-phase load. In addition, the semiconductor device can also be used for a DC / DC converter or an AC / DC converter when power is supplied to a DC load, for example.

[0057] The load of the power conversion device according to Embodiment 6 is not limited to the electric motor as described above. The power conversion device can also be used as a power supply device for an electrical discharge machine, a laser beam machine, an induction heating cooking device, or a non-contact power supply system, and can also be used as a power conditioner of, for example, a solar energy system or an electricity storage system.

[0058] Embodiments can be freely combined and appropriately modified or omitted within the scope of the present invention. Explanation of reference symbols

[0059] 4 semiconductor element, 5 metal electrode, 5a, 5b end portion, 5c, 5d side portion, 5e edge, 5g protruding portion, 6 encapsulating resin, 7 electronic circuit, 9 wire.

Claims

[1] A semiconductor device comprising: an electronic circuit (7) containing a semiconductor element (4); a metal electrode (5) directly connected to the electronic circuit; and a resin (6) encapsulating the electronic circuit and the metal electrode, wherein an end portion (5a) of the metal electrode on a surface opposite to a surface facing the electronic circuit is acute-angled, and an end portion (5b) of the metal electrode on the surface facing the electronic circuit is arcuate or blunt-shaped. [2] A semiconductor device comprising: an electronic circuit (7) containing a semiconductor device (4) and a circuit element (9); a metal electrode (5) directly connected to the electronic circuit, the metal electrode (5) having a substantially elongated planar shape; and a resin (6) encapsulating the electronic circuit and the metal electrode, wherein a portion (5c) of the metal electrode opposite a portion (5d) facing the circuit element is pointed, and the portion of the metal electrode facing the circuit element is arcuate or blunt. [3] A semiconductor device according to claim 2, wherein the circuit element comprises a wire (9). [4] A semiconductor device according to claim 1, wherein a portion of the metal electrode (5) adjacent to an edge (5e) of the metal electrode has an upwardly bent shape. [5] A semiconductor device according to any one of claims 1 to 4, wherein the metal electrode (5) includes a projecting part (5g), and the electronic circuit (7) is arranged in a direction other than an orientation direction of a tip of the protruding part. [6] A semiconductor device according to claim 2, wherein the metal electrode (5) is arranged laterally to the circuit element (9) and above the semiconductor element (4), and the metal electrode is inclined towards the semiconductor element such that the portion (5c) of the metal electrode opposite to the portion (5d) facing the circuit element is closer to the semiconductor element than the portion of the metal electrode facing the circuit element. [7] A semiconductor device according to any one of claims 1 to 6, wherein the semiconductor element (4) includes a wide band gap semiconductor. [8] A semiconductor device including a semiconductor element (4), the semiconductor device comprising: an electronic circuit (7) containing the semiconductor element and a circuit element (9); a metal electrode (5) directly connected to the electronic circuit and arranged laterally to the electronic circuit and above the semiconductor element, the metal electrode (5) having a substantially elongated planar shape; and a resin (6) encapsulating the electronic circuit and the metal electrode, wherein the metal electrode is inclined in the direction of the semiconductor element such that a partial region (5c) of the metal electrode which is opposite a partial region (5d) facing the circuit element is closer to the semiconductor element than the partial region of the metal electrode which faces the circuit element. [9] Power conversion device comprising: a main conversion circuit (201) including the semiconductor device according to any one of claims 1 to 8, wherein the main conversion circuit converts an input power to output a resultant power; and a control circuit (203) which outputs to the main conversion circuit a control signal for controlling the main conversion circuit.

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