ELECTRONIC COMPONENT

Abstract

Electronic component with: an insulating layer (28); a low-voltage conductor pattern (20) formed within the insulating layer (28); a high-voltage conductor pattern (21) formed within the insulating layer (28) such that it is oriented in an up / down direction opposite the low-voltage conductor pattern (20); and a withstand voltage improvement structure with conductive properties, formed within the insulating layer (28) and along the high-voltage conductor pattern (21), such that it projects further outwards in plan view than the low-voltage conductor pattern (20), wherein the low-voltage conductor pattern (20) has a low-voltage coil with a spiral shape, wherein the high-voltage conductor pattern (21) has a high-voltage coil with a spiral shape, where the low-voltage coil and the high-voltage coil form a transformer, wherein the withstand voltage improvement structure has a dummy conductor pattern (108) extending along the high-voltage coil in a pattern which is discontinuous with respect to a spiral pattern of the high-voltage coil, wherein the high-voltage coil has an inner terminal end and an outer terminal end, wherein the dummy conductor pattern (108) is set such that it has the same potential as the outer terminal end of the high-voltage coil, wherein the inner terminal end of the high-voltage coil is positioned in a region at an inner side of the low-voltage coil in plan view, wherein the outer terminal end of the high-voltage coil is positioned in a region outside the low-voltage coil in plan view, and wherein the dummy conductor pattern (108) is brought out from the outer terminal end of the high-voltage coil.

Description

Technical area

[0001] The present invention relates to an electronic component. State of the art

[0002] In the field of power electronics, for example, the development of transformers comprising a pair of coils facing each other is progressing. Patent Literature 1 discloses a transformer comprising a pair of inductors. One of the inductors is arranged to face the other inductor, rotating 180° with a central axis as a rotation axis. Citation listPatent literature

[0003] Patent Literature 1: Japanese Patent Application Publication No. JP 2013-115131 A

[0004] Further electronic components are known from the documents US 2017 / 0 287 624 A1 and US 2014 / 0 061 643 A1. Overview of the inventionTechnical problem

[0005] In an electronic component including a low-voltage conductor pattern 20 and a high-voltage conductor pattern 21 opposed to each other via an insulating layer 28, an electric field is formed in a region between the low-voltage conductor pattern 20 and the high-voltage conductor pattern 21. The electric field tends to concentrate on the side of the high-voltage conductor pattern 21. The occurrence of such an electric field concentration may be detrimental to improving withstand voltage.

[0006] A preferred embodiment of the present invention therefore provides an electronic component and an electronic component module with which a concentration of an electric field on a high-voltage conductor pattern 21 is relaxed or weakened to enable an improvement in the withstand voltage. Solution to the problem

[0007] The present invention provides an electronic component having the features of claim 1 and an electronic component having the features of claim 7, each comprising an insulating layer 28, a low-voltage conductor pattern 20 formed within the insulating layer 28, a high-voltage conductor pattern 21 formed within the insulating layer 28 so as to oppose the low-voltage conductor pattern 20 in an up-down direction, and a withstand voltage improvement structure 102 having conductive property formed within the insulating layer 28 and along the high-voltage conductor pattern 21 so as to protrude further outward than the low-voltage conductor pattern 20 in a plan view.

[0008] According to the present electronic component, the electric field concentration at the high-voltage conductor pattern 21 can be reduced by the withstand voltage improvement structure 102 with conductive property. An electronic component that enables withstand voltage improvement can thereby be provided.

[0009] The present invention further provides an electronic component having the features of claim 9 and an electronic component having the features of claim 12, each comprising an insulating layer 28, a low-voltage conductor pattern 20 formed within the insulating layer 28, a high-voltage conductor pattern 21 formed within the insulating layer 28 so as to face the low-voltage conductor pattern 20 in an up / down direction, a low-voltage pad 13 formed on the insulating layer 28 and electrically connected to the low-voltage conductor pattern 20, a high-voltage pad 14 formed on the insulating layer 28, in a plan view spaced from the low-voltage pad 13 and electrically connected to the high-voltage conductor pattern 21, and a pad-side withstand voltage improvement structure 102 having a conductive property,which is formed in a plan view within the insulating layer 28 along a peripheral edge of the high-voltage pad 14.,

[0010] According to the present electronic component, the electric field concentration at the high-voltage pad (14) can be reduced by the pad-side withstand voltage improvement structure 118 with conductive properties. An electronic component that enables withstand voltage improvement can thus be provided.

[0011] Additionally, the present invention discloses an electronic component comprising a first insulating layer 28 having a first dielectric breakdown strength, a low-voltage conductor pattern 20 formed within the first insulating layer 28, a high-voltage conductor pattern 21 formed within the first insulating layer 28 such that it faces the low-voltage conductor pattern 20 in an up / down direction, a low-voltage wiring formed within the first insulating layer 28 at a distance from the high-voltage conductor pattern 21 in a direction along a front surface of the first insulating layer 28, which is electrically connected to the low-voltage conductor pattern 20 and which forms an electric field with a first value,which is not greater than the first dielectric breakdown strength between the high-voltage conductor pattern 21 and the low-voltage wiring, with an electric field improvement structure with conductive property, which is arranged in a region between the high-voltage conductor pattern 21 and the low-voltage wiring, within the first insulating layer 28, and which forms an electric field with a second value that is not greater than the first dielectric breakdown strength and not less than the first value between the low-voltage wiring and the electric field improvement structure, and with a second insulating layer 152 formed on the first insulating layer 28 and which has a second dielectric breakdown strength that is not greater than the first dielectric breakdown strength.

[0012] Now, consider a case where an electric field enhancement structure is not formed. In this case, the high-voltage conductor pattern 21 is formed at a position close to the second insulating layer 152 with respect to the low-voltage conductor pattern 20. Therefore, an electric field concentrated on the high-voltage conductor pattern 21 also imposes a load on the second insulating layer 152. Therefore, there is a possibility of dielectric breakdown occurring at the second insulating layer 152 when an electric field strength at the high-voltage conductor pattern 21 exceeds the second dielectric breakdown strength of the second insulating layer 152.

[0013] On the other hand, in the additionally disclosed electronic component, the electric field enhancement structure with conductive property is formed in the region within the first insulating layer 28 between the high-voltage conductor pattern 21 and the low-voltage wiring. Therefore, an electric field between the high-voltage conductor pattern 21 and the low-voltage wiring is practically determined by a distance between the electric field enhancement structure and the low-voltage wiring.

[0014] The concentration of the electric field at the high-voltage conductor pattern 21 can thereby be mitigated. Furthermore, an electric field formed between the low-voltage conductor pattern 20 and the high-voltage conductor pattern 21 can also be shielded by the electric field enhancement structure with conductive properties.

[0015] While an electric field strength at the first insulating layer 28 having the first dielectric breakdown strength exceeding the second dielectric breakdown strength can be increased, an electric field strength at the second insulating layer 152 having the second dielectric breakdown strength not exceeding the first dielectric breakdown strength can be reduced. That is, with the electronic component, the electric field strength on the second insulating layer 152 side with the low dielectric breakdown strength can be reduced by intentionally increasing the electric field strength on the first insulating layer 28 side with the high dielectric breakdown strength.

[0016] Dielectric breakdown due to the concentration of the electric field at the high-voltage conductor pattern 21 can thus be suppressed at the second insulating layer 152. An electronic component that enables improvement in withstand voltage can thus be provided.

[0017] The above and other objects, features and effects of the present invention will become more apparent from the following description of preferred embodiments with reference to the accompanying drawings. Short description of the drawing [ Fig. 1] Fig. 1 is a plan view of an electronic component module in which an electronic component according to a first unclaimed embodiment is accommodated. [ Fig. 2] Fig. 2 is a diagram illustrating a connection configuration and potentials at respective sections of the electronic component module. [ Fig. 3] Fig. 3 is a diagram describing the plane structure of the electronic component. [ Fig. 4] Fig. 4 is a diagram for describing the layer structure of a lower coil of the electronic component. [ Fig. 5] Fig. 5 is a diagram for describing the plane structure of an upper coil of the electronic component. [ Fig. 6] Fig. 6 is a sectional view along a line VI-VI in Fig. 3. [ Fig. 7] Fig. 7 is a sectional view along a line VII-VII in Fig. 3. [ Fig. 8] Fig. 8 is a sectional view of the arrangement of a comparative example of the electronic component. [ Fig. 9] Fig. 9 is a sectional view along a line IX-IX in Fig. 8. [ Fig. 10] Fig. 10 is a diagram comparing an average dielectric breakdown voltage of the electronic component according to the comparative mode or comparative example of the present invention and an average dielectric breakdown voltage of the electronic component according to the first unclaimed embodiment. [ Fig. 11] Fig. 11 is a diagram comparing a variation in the dielectric breakdown voltage of the electronic component according to the comparison mode of the present invention and a variation in the dielectric breakdown voltage of the electronic component according to the first unclaimed embodiment of the present invention. [ Fig. 12] Fig. 12 is a diagram for describing the plane structure of upper coils of an electronic component according to a second preferred embodiment of the present invention. [ Fig. 13] Fig. 13 is an enlarged view of a region XIII shown in Fig. 12 is shown. [ Fig. 14] Fig. 14 is an enlarged view of a region XIV shown in Fig. 13 is shown. [ Fig. 15] Fig. Figure 15 is an enlarged view of a region XV shown in Fig. 13 is shown. [ Fig. 16] Fig. 16 is a sectional view along a line XVI-XVI taken in Fig. 12 is shown. [ Fig. 17] Fig. 17 is a sectional view along a line XVII-XVII taken in Fig. 12 is shown. [ Fig. 18] Fig. 18 is a graph showing a relationship between a protrusion amount of a first withstand voltage improvement structure 102 and an electric field strength determined by simulation. [ Fig. 19] Fig. 19 is a graph of a relationship between the number of second dummy conductor patterns 121 and an electric field strength determined by a simulation. [ Fig. 20] Fig. 20 is a graph comparing an average dielectric breakdown voltage of an electronic component according to a reference example of the present invention and an average dielectric breakdown voltage of the electronic component according to the second preferred embodiment of the present invention. [ Fig. 21] Fig. 21 is a diagram or a representation of a section corresponding Fig. 16 and is a sectional view of an electronic component according to a third preferred embodiment of the present invention. [ Fig. 22] Fig. 22 is a representation of a section corresponding Fig. 14 and is a diagram for describing the plane structure on a side of a first upper coil of an electronic component according to a fourth preferred embodiment of the present invention. [ Fig. 23] Fig. 23 is a plan view of an upper coil of an example of the Fig. 22 shown electronic component. [ Fig. 24] Fig. 24 is a plan view of an upper coil of an example of the Fig. 22 shown electronic component. [ Fig. 25] Fig. 25 is a plan view of an upper coil of an example of the Fig. 22 shown electronic component. [ Fig. 26] Fig. 26 is a graph of measurement results of the electric field strength of the Fig. 23 shown example, the one in Fig. 24 and the example shown in Fig. 25 example shown. [ Fig. 27] Fig. 27 is a graph showing the average dielectric breakdown voltage of the electronic component according to the reference example of the present invention, an average dielectric breakdown voltage of the Fig. 23, an average dielectric breakdown voltage of the Fig. 24 and an average dielectric breakdown voltage of the example shown in Fig. 25 example shown. [ Fig. 28] Fig. 28 is a sectional view for describing an electronic component according to a fifth preferred embodiment of the present invention. [ Fig. 29] Fig. 29 is a diagram for describing an effect of the Fig. 28 shown electronic component. [ Fig. 30] Fig. 30 is a diagram to describe the effect of the Fig. 28 shown electronic component. [ Fig. 31] Fig. 31 is a diagram for describing the layer structure of an electronic component according to a sixth preferred embodiment of the present invention. [ Fig. 32] Fig. 32 is a diagram for describing the plane structures of low-voltage side capacitor conductor films 162 of the Fig. 31 shown electronic component. [ Fig. 33] Fig. 33 is a diagram for describing the plane structures of high-voltage side capacitor conductor films 163 of the Fig. 31 shown electronic component. [ Fig. 34] Fig. 34 is a sectional view taken along a line XXXIV-XXXIV shown in Fig. 31 is shown. [ Fig. 35] Fig. 35 is a sectional view for describing an electronic component according to a seventh preferred embodiment of the present invention. [ Fig. 36] Fig. 36 is a diagram showing a modification example concerning a pattern of a resin film. [ Fig. 37] Fig. 37 is a diagram showing a modification example concerning a pattern of a resin film. [ Fig. 38] Fig. 38 is a plan view of an electronic component module according to a modification example. Description of Embodiments

[0018] Fig. 1 is a plan view of an electronic component module 1 in which an electronic component according to a first preferred embodiment of the present invention is accommodated. In Fig. 1, a central section of the electronic component module 1 is shown transparently to illustrate the internal structure.

[0019] There are cases where a high-voltage pad 14 electrically connected to a high-voltage coil and a low-voltage pad 13 electrically connected to a low-voltage coil are arranged on a front surface of an electronic component separated from each other in a lateral direction.

[0020] Typically, the distance between the low-voltage pad 13 and the high-voltage pad 14 is set to a value not less than several tens of the distance between the high-voltage coil and the low-voltage coil of a transformer from the perspective of ensuring sufficient withstand voltage. Therefore, no sufficient research has been conducted to date regarding improving the withstand voltage by utilizing a region between the low-voltage pad 13 and the high-voltage pad 14.

[0021] Accordingly, in the present embodiment, an electronic component and an electronic component module enabling improvement in withstand voltage are provided upon making note of the region between the low-voltage pad 13 and the high-voltage pad 14.

[0022] One package type of the electronic component module 1 is SOP ("small outline package"). The package type of the electronic component module 1 is not limited to SOP, and any different types such as QFP ("quad flat package"), SOJ ("small outline J-lead package"), etc. can be used as the package type of the electronic component module 1.

[0023] The electronic component module 1 is a power module in which a plurality of chips are housed in a package, and includes a resin package 2, a plurality of terminals 3, and a plurality of chips 4.

[0024] The resin housing 2 is formed, for example, into a quadrilateral (square) plate shape using an epoxy resin. In this embodiment, the plurality of terminals 3 are provided across an interior and exterior of the resin housing 2, specifically across a pair of mutually opposite end surfaces of the resin housing 2.

[0025] The plurality of chips 4 include a controller chip 5 (controller IC) as an example of a low-voltage device, an electronic component 6, and a driver chip 7 (driver IC) as an example of a high-voltage device. In this embodiment, the electronic component 6 is a transformer chip that includes transformers. Each of the chips 5 to 7 is formed into a (rectangular) plate shape with four sides.

[0026] The size of the controller chip 5 and the size of the driver chip 7 can be substantially the same. The electronic component 6 can be smaller in size than the controller chip 5 and the driver chip 7.

[0027] The electronic component 6 is arranged at a substantially central portion of the resin package 2. The controller chip 5 and the driver chip 7 are arranged on one of the terminal sides 3 and on the opposite terminal side 3, respectively, with respect to the electronic component 6.

[0028] The controller chip 5 and the driver chip 7 are arranged to sandwich the electronic component 6 between them. The controller chip 5 and the driver chip 7 are each adjacent to a plurality of the terminals 3.

[0029] The controller chip 5 and the electronic component 6 are arranged together on a first die pad 8. The driver chip 7 is arranged on a second die pad 9, which is spaced apart from the first die pad 8.

[0030] A plurality of pads 10 and a plurality of pads 11 are formed on a front surface of the controller chip 5. The plurality of pads 10 are aligned along a long side of the controller chip 5, specifically on the side closer to the terminals 3. The plurality of pads 10 are connected to the terminals 3 by bond wires 12.

[0031] The plurality of pads 11 are arranged aligned or aligned along a long side of the controller chip 5 on the side opposite the terminals 3 (on the side closer to the electronic component 6).

[0032] A plurality of low-voltage pads 13 and a plurality of high-voltage pads 14 are formed on a front surface of the electronic component 6. The plurality of low-voltage pads 13 are arranged in alignment along a long side of the electronic component 6, specifically on the side closer to the controller chip 5. The plurality of low-voltage pads 13 are connected to the pads 11 of the controller chip 5 by bonding wires 15.

[0033] In this embodiment, the pads 11 of the controller chip 5 are connected to a primary side of the electronic component 6. The plurality of high-voltage pads 14 are arranged aligned along a long side of the electronic component 6, specifically at a widthwise central portion of the electronic component 6.

[0034] A plurality of pads 16 and a plurality of pads 17 are formed on a front surface of the driver chip 7. The plurality of pads 16 are arranged in alignment along a long side of the driver chip 7, specifically on the side closer to the electronic component 6. The plurality of pads 16 are connected to the high-voltage pads 14 of the electronic component 6 by bonding wires 18.

[0035] In this embodiment, the pads 16 of the driver chip 7 are connected to a secondary side of the electronic component 6. The plurality of pads 17 are arranged in alignment along a long side of the driver chip 7, specifically on a side opposite the electronic component 6 (the side closer to the terminals 3). The plurality of pads 17 are connected to the terminals 3 by bond wires 19.

[0036] The Fig. The position configuration of the pads of the respective chips 5 to 7 shown in Fig. 1 is merely an example and can be changed as appropriate according to the package type and the position configuration of the chips 4.

[0037] Fig. 2 is a diagram showing a connection configuration and potentials at respective sections of the electronic component module 1 of the Fig. 1.

[0038] As it is in Fig. As shown in Fig. 2, in the electronic component module 1, a lower coil 20 on a primary side (low voltage side) and an upper coil 21 on a secondary side (high voltage side) of the electronic component 6 are opposite each other, namely over a distance in an up / down direction.

[0039] The lower coil 20 is formed as an example of a low-voltage coil (low-voltage conductor pattern 20). The upper coil 21 is formed as an example of a high-voltage coil (high-voltage conductor pattern 21). The lower coil 20 and the upper coil 21 are each formed in a spiral shape.

[0040] A transformer (both a first transformer 301 and a second transformer 302) is formed by magnetically coupling the lower coil 20 and the upper coil 21. The controller chip 5 and the driver chip 7 are DC-isolated by the transformer (the lower coil 20 and the upper coil 21). Furthermore, the controller chip 5 and the driver chip 7 are AC-connected by the transformer (the lower coil 20 and the upper coil 21).

[0041] A low-voltage wiring 24 and a low-voltage wiring 93 are connected to an inner coil end 22 (inner terminal end of the coil) and an outer coil end 92 (outer terminal end of the coil) of the lower coil 20, respectively. The terminal ends of the low-voltage wirings 24 and 93 are exposed as the low-voltage pads 13.

[0042] A high-voltage wiring 25 (inner coil end wiring) and a high-voltage wiring 95 (outer coil end wiring) are connected to an inner coil end 23 and an outer coil end 94 of the upper coil 21, respectively. The terminal ends of the high-voltage wirings 25 and 95 are exposed as the high-voltage pads 14.

[0043] Controller chip 5 contains transistors Tr1 and Tr2. Transistors Tr1 and Tr2 are switching components that conduct, break, and disconnect wiring 90 and 91, respectively.

[0044] The transistor Tr1 is arranged in the middle of the wiring 90 connecting a certain pad 10 and a certain pad 11. The transistor Tr2 is provided in the middle of the wiring 91 connecting another pad 10 and another pad 11.

[0045] The pads 10 and 11 on the wiring 90 side are connected to an input voltage and the low-voltage pads 13 on the outer coil end 92 side, respectively, via bond wires 12 and 15. The pads 10 and 11 on the wiring 91 side are connected to a ground voltage and the low-voltage pads 13 on the inner coil end 22 side, respectively, via bond wires 12 and 15.

[0046] By controlling the controller chip 5 such that a first voltage application state (Tr1: ON, Tr2: OFF) and a second voltage application state (Tr1: OFF, Tr2: ON) are alternately repeated, a periodic pulse voltage is generated in the lower coil 20 of the electronic component 6. For example, in Fig. 2 generates a pulse voltage of 5 V in the lower coil 20 with respect to a reference voltage = 0 V (ground voltage).

[0047] While a direct current signal is interrupted between the lower coil 20 and the upper coil 21, in the electronic component 6, only an alternating current signal is selectively transmitted to the high voltage side (upper coil 21) based on the pulse voltage generated in the lower coil 20 by electromagnetic induction.

[0048] The transmitted AC signal is boosted according to a transformer ratio between the lower coil 20 and the upper coil 21. The transmitted AC signal is output to the driver chip 7 via the bond wires 18. Fig. 2 For example, after the pulse voltage has been increased from 5 V to 15 V, it is output to the driver chip 7, with a reference voltage set to 1200 V.

[0049] The driver chip 7 applies the input pulse voltage of 15 V to a gate electrode (not shown) of a SiC power MOSFET (e.g., with a source-drain voltage = 1200 V) to perform a switching operation of the MOSFET.

[0050] The exact Fig. The voltage values ​​shown in Figure 2 are merely an example used to describe the operation of the electronic component module 1. The reference voltage of the driver chip 7 (high-voltage region or HV region) may be a value exceeding 1200 V.

[0051] Fig. 3 is a diagram for describing the layer structure of the electronic component 6. Fig. 4 is a diagram for describing the plane structure of a layer of the electronic component 6 in which the lower coil 20 is arranged. Fig. 5 is a diagram for describing the plane structure of a layer of the electronic component 6 in which the upper coil 21 is arranged.

[0052] Fig. 6 is a sectional view of the electronic component 6 (sectional view along the line VI-VI in Fig. 3). Fig. 7 is a sectional view of the electronic component 6 (sectional view along the line VII-VII in Fig. 3). In the Fig. 6 and Fig. 7 For the sake of clarity, only metal sections are hatched.

[0053] With reference to the Fig. 3 to 5, the electronic component 6 includes the first transformer 301 and the second transformer 302. The first transformer 301 and the second transformer 302 are formed with a distance along a length direction of the electronic component 6. On the sheet planes of the Fig. 3 to 5, the first transformer 301 is shown at an upper side, and the second transformer 302 is shown at a lower side.

[0054] As will be described below, the first transformer 301 includes two sets of each of the lower coil 20 and the upper coil 21, which are opposite to each other. Similarly, the second transformer 302 includes two sets of each of the lower coil 20 and the upper coil 21, which are opposite to each other.

[0055] As it is in the Fig. 6 and Fig. 7, a semiconductor substrate 26 and an insulating layer laminate structure 27 formed on the semiconductor substrate 26 are included. As the semiconductor substrate 26, an Si substrate (silicon substrate), a SiC substrate (silicon carbide substrate), etc. can be used.

[0056] The electronic component 6 is formed as a semiconductor component by the semiconductor substrate 26. The electronic component module 1, which contains the electronic component 6, is thus formed as a semiconductor module.

[0057] The insulating layer laminate structure 27 is formed of a plurality (twelve layers in Fig. 6 and in Fig. 7) insulating layers 28 sequentially laminated from a front surface of the semiconductor substrate 26. Except for the insulating layer 28, which is the lowermost layer contacting the front surface of the semiconductor substrate 26, the plurality of insulating layers 28 are each formed of a laminate structure of an etching stopper film 29, which is a lower layer, and an interlayer insulating film 30, which is an upper layer.

[0058] The insulating layer 28, which is the bottom layer, is formed only of the interlayer insulating film 30. A SiN film, a SiC film, a SiCN film, etc., can be used as the etching stop film 29. An SiO2 film can be used as the interlayer insulating film 30.

[0059] The lower coil 20 and the upper coil 21 are formed in mutually different insulating layers 28 in the insulating layer laminate structure 27. The lower coil 20 and the upper coil 21 are opposed to each other via one or more layers of the insulating layers 28.

[0060] In this embodiment, the lower coil 20 is formed in the insulating layer 28, which is the fourth layer from the semiconductor substrate 26. The upper coil 21 is formed in the eleventh insulating layer 28, with six layers of insulating layers 28 provided between the upper coil 21 and the lower coil 20.

[0061] As it is in the Fig. 3 to 5, each lower coil 20 and each upper coil 21 are formed in regions of elliptical annular shapes surrounding peripheries of inner regions 31 and 32 of an elliptical shape, respectively, in plan view, such that the inner regions 31 and 32 are defined at centers thereof.

[0062] Each upper coil 21 is formed such that its upper surface is flush with an upper surface of an insulating layer 28. The upper coil 21 is therefore in contact with mutually different insulating layers 28 on its side surface, its upper surface and its lower surface.

[0063] Specifically, in the insulating layer 28 in which the upper coil 21 is embedded, the etching stop film 29 and the interlayer insulating film 30 are in contact with the side surface of the upper coil 21. In the interlayer insulating film 28 formed on an upper side of the insulating layer 28 in which the upper coil 21 is embedded, only the etching stop film 29, which is the lower layer, contacts the upper surface of the upper coil 21. In the insulating layer 28 on the lower side, only the interlayer insulating film 30, which is the upper layer, contacts the lower surface of the upper coil 21.

[0064] Although a description will be omitted here, as with the upper coil 21, the lower coil 20 is also formed so that its upper surface is flush with an upper surface of an insulating layer 28.

[0065] As it is in the Fig. 3, Fig. 6 and Fig. 7, high-voltage pad layers 88 as examples of high-voltage conductive layers and low-voltage pad layers 89 as examples of low-voltage conductive layers are formed on a front surface of the insulating layer laminate structure 27 (on the interlayer insulating film 30 of that insulating layer 28 which is the uppermost layer).

[0066] On an entire surface of the insulating layer laminate structure 27, a protective film 75 and a passivation film 76, as examples of front-surface insulating films, are successively laminated to integrally cover the above. Pad openings 79 and 78 are formed in the films 75 and 76. The pad openings 79 and 78 expose the high-voltage pad layers 88 and the low-voltage pad layers 89, respectively, as the high-voltage pads 14 and the low-voltage pads 13.

[0067] The high-voltage pads 14 are arranged in central high-voltage (HV) regions 36 in which the upper coils 21 are arranged, in a plan view when viewing the electronic component 6 from above along a laminate direction of the insulating layer laminate structure 27.

[0068] Here, the high-voltage regions 36 include regions for forming the upper coils 21 and wirings equipotential with the upper coils 21 in the insulating layer 28 embedding the upper coils 21, and peripheral portions of the formation regions.

[0069] In this embodiment, a total of four upper coils 21 are formed in pairs of two each with intervals in the length direction of the electronic component 6, as shown in the Fig. 3 and Fig. 5. In the inner regions 32 of the upper coils 21 and between mutually adjacent upper coils 21 of each pair, wirings 37 for inner coil ends and a wiring 96 for outer coil ends are formed, respectively.

[0070] In each pair of upper coils 21, one upper coil 21 and the other upper coil 21 are electrically connected to each other by the outer coil end wiring 96 between them. The upper coils 21, the outer coil end wiring 96 therebetween, and the inner coil end wiring 37 inside the respective upper coils 21 are all equipotential, or have the same potential.

[0071] In the insulating layer 28, the inner regions 32 of the respective upper coils 21 and regions between the upper coils 21 of the respective pairs of upper coils 21 are also included in the high-voltage regions 36, present within a range in which electric fields extend from the upper coils 21, the wirings 37 for inner coil ends and the wirings 96 for outer coil ends.

[0072] In each high voltage region 36 there are regions which are connected to respective upper coils 21 in plan views of the Fig. 3 and Fig. 5 overlap, and the inner regions 32 of the respective upper coils 21 examples of high-voltage coil formation regions.

[0073] In each high-voltage region 36, a region adjacent to the high-voltage coil formation regions is a coil outer region 85 outside the upper coils 21. The region adjacent to the high-voltage coil formation regions includes, for example, a region between the upper coils 21 in each pair of upper coils 21 (intermediate coil region 50) and regions along circumferential edges of the respective upper coils 21 (coil surrounding regions 99).

[0074] Although they coincide with the high-voltage regions 36 in plan view, regions where the lower coils 20 (low-voltage coils) are arranged are separated from the upper coils 21 (high-voltage coils) by a plurality of insulating layers 28. The regions where the lower coils 20 (low-voltage coils) are arranged are not included in the high-voltage regions 36, as stated with regard to the present preferred embodiment, due to the fact that effects of the electric fields from the upper coils 21 hardly extend there.

[0075] As it is in Fig. 3, a total of six high-voltage pads 14 are arranged, one above the inner region 32 of each upper coil 21 and one above the intermediate coil region 50 of each pair of upper coils 21.

[0076] When classifying the high-voltage pads 14 according to the position configuration thereof, the high-voltage pads 14 may include first pads 33 and second pads 34.

[0077] The first pads 33 are arranged above the inner regions 32 of the respective upper coils 21. Each first pad 33 faces the corresponding inner region 32 in a thickness direction (laminate direction) of the insulating layer laminate structure 27. The second pads 34 are arranged above the respective intermediate coil regions 50. Each second pad 34 faces the corresponding intermediate coil region 50 in a thickness direction (laminate direction) of the insulating layer laminate structure 27.

[0078] As it is in the Fig. 3, Fig. 5 and Fig. 6, the first pads 33 are connected via vias 38 to the wiring 37 of the inner coil ends, which are embedded in the same insulating layer 28 as the upper coils 21.

[0079] As it is in the Fig. 3, Fig. 5 and Fig. 7, the second pads 34 are connected by a similar structure via vias 35 to the wirings 96 for outer coil ends, which are embedded in the same insulating layer 28 as the upper coils 21.

[0080] AC signals transmitted to the upper coils 21 can thereby be output from the high-voltage pads 14 via the wirings 37 for inner coil ends with the vias 38 and the wirings 96 for outer coil ends with the vias 35.

[0081] A combination of a wiring 37 for inner coil ends and the vias 38 connected thereto and a combination of a wiring for outer coil ends 96 and the vias 35 connected thereto form the high-voltage wiring 25 and the high-voltage wiring 95 of the Fig. 2.

[0082] In the insulating layer laminate structure 27, low voltage regions 46 ( Fig. 6 and Fig. 7), an outer low-voltage region 47 ( Fig. 3 to Fig. 7) and an intermediate region 48 ( Fig. 3 to Fig. 7) are set or set as regions of low-potential regions (low-voltage regions or LV regions) that are electrically separated from the high-voltage regions 36.

[0083] The low-voltage regions 46 include regions for forming the lower coils 20 and wirings that are equipotential with the lower coils 20, specifically in the insulating layer 28 encasing the lower coils 20, as well as peripheral portions of these formation regions. As with the relationship between the lower coils 20 and the upper coils 21, the low-voltage regions 46 face the high-voltage regions 36 across one or more layers of the insulating layers 28.

[0084] In this embodiment, a total of four lower coils 20 are formed at positions where they are opposed to the upper coils 21, ie, in pairs of two at intervals in the length direction of the electronic component 6, as shown in Fig. 4. In the inner regions 31 of the lower coils 20 and between the mutually adjacent lower coils 20 of each pair, inner coil end wirings 49 and outer coil end wiring 97 are formed, respectively.

[0085] In each pair, one lower coil 20 and the other lower coil 20 are electrically connected to each other by the outer coil end wiring 97 therebetween. The lower coils 20, the outer coil end wiring 97 therebetween, and the inner coil end wiring 49 within the respective lower coils 20 are all at the same potential.

[0086] In the insulating layer 28, the inner regions 31 of the respective lower coils 20 and regions between the lower coils 20 of the respective pairs of lower coils are also included in the low-voltage regions 46, namely present within a range into which electric fields extend from the lower coils 20, the wirings 49 for the inner coil ends, and the wirings 97 for the outer coil ends. As shown in Fig. 5, the inner coil end wirings 49 are arranged at positions shifted from the inner coil end wirings 37 on the high voltage side in a plan view.

[0087] As it is in the Fig. As shown in Figures 3 through 5, the outer low-voltage region 47 is set to surround the high-voltage regions 36 and the low-voltage regions 46. The intermediate region 48 is set or disposed between the high-voltage regions 36 plus the low-voltage regions 46 and the outer low-voltage region 47.

[0088] As it is in the Fig. 3, Fig. 6 and Fig. 7, the low-voltage pads 13 are formed on the front surface of the insulating layer laminate structure 27 (on the interlayer insulating film 30 of the insulating layer 28, which is the uppermost layer) in the outer low-voltage region 47.

[0089] As it is in the Fig. 6 and Fig. 7, the outer low voltage region 47 includes a first region 39 as an example of a first space and a second region 40 as an example of a second space.

[0090] The first region 39 is a region on one side (left side of the sheet surface) across or from the high-voltage pads 14. The second region 40 is a region on the other side (right side of the sheet surface) across or from the high-voltage pads 14. The low-voltage pads 13 are selectively biased (“biasedly”) formed in the first region 39.

[0091] In this embodiment, a total of six low-voltage pads 13 are arranged at intervals in the length direction of the electronic component 6 in the first region 39, one on each side of the six provided high-voltage pads 14.

[0092] The respective low-voltage pads 13 are connected to the lower coils 20 via the low-voltage wirings 24 and 93 routed inside the insulating layer laminate structure 27. Each low-voltage wiring 24 includes a penetration wiring 51 and a lead-out wiring 52.

[0093] The penetration wirings 51 are formed in the outer low-voltage region 47 in columnar shapes, which, starting from the respective low-voltage pads 13, penetrate at least the insulating layer 28 in which the lower coils 20 are formed and reach an insulating layer 28 which is lower than the lower coils 20.

[0094] More specifically, each penetration wiring 51 includes low-voltage layer wirings 53 and 54 (low-voltage wirings) and vias 55, 56, and 57. The low-voltage layer wirings 53 and 54 are embedded in island shapes (four-sided shapes) in the same insulating layers 28 as the upper coils 21 and the lower coils 20, respectively.

[0095] The plurality of vias 55 connect the low-voltage layer wirings 53 and 54. The vias 56 connect the low-voltage layer wirings 53 on the upper side to the low-voltage pads 13. The vias 57 connect the low-voltage layer wirings 54 on the lower side to the lead-out wirings 52.

[0096] The lead-out wirings 52 are formed in line shapes leading from the low-voltage regions 46 to the outer low-voltage region 47 via the insulating layer 28, which is lower than the lower coils 20.

[0097] More specifically, each lead-out wiring 52 includes the corresponding inner coil end wiring 49, a lead-out layer wiring 58, and a via 59. The lead-out layer wiring 58 is embedded in a line shape in the insulating layer 28, which is lower than the corresponding lower coil 20. The lead-out layer wiring 58 crosses or runs transversely below the lower coil 20.

[0098] Via 59 connects the lead-out layer wiring 58 to the inner coil end wiring 49. The lead-out layer wiring 58 is connected to the semiconductor substrate 26 via a via 86. The low-voltage wirings 24 are therefore fixed to a substrate voltage (for example, the ground voltage).

[0099] Although details are omitted, as with the low-voltage wirings 24, the low-voltage wirings 93 are also formed of wirings, the penetration wirings 43 ( Fig. 7) and lead-out wiring 98 ( Fig. 3 to 5).

[0100] By the above arrangement, among the plurality of low-voltage pads 13, first pads 41 arranged on the side of the first pads 33 of the high-voltage pads 14 are connected to the wirings 49 for inner coil ends of the lower coils 20 via the penetration wirings 51 and the lead-out wirings 52, as shown in FIGS. Fig. 3 to 6.

[0101] As it is in the Fig. As shown in FIGS. 3 to 6, second pads 42 disposed on the side of the second pads 34 of the high-voltage pads 14 are connected to the outer coil end wirings 97 of the lower coils 20 via the piercing wirings 43 and the lead-out wirings 98. Signals input to the low-voltage pads 13 can thereby be transmitted to the lower coils 20 via the piercing wirings 51 and 43 and the lead-out wirings 52 and 98.

[0102] In the insulating layer laminate structure 27, a shielding layer 69 is formed further outward than the low-voltage wirings 24 and 93. The shielding layer 69 prevents moisture from entering the component from the outside and prevents a crack at an end face from propagating into the interior.

[0103] As it is in the Fig. As shown in Figures 3 to 7, the shielding layer 69 is formed into a wall shape along end surfaces of the electronic component 6. A lower portion of the shielding layer 69 is connected to the semiconductor substrate 26. The shielding layer 69 is therefore fixed to the substrate voltage (for example, the ground voltage).

[0104] More specifically, as stated in the Fig. 6 and Fig. 7, a shield layer 69 includes shield layer wirings 70 to 72 disposed in the same insulating layers 28 as the upper coils 21, the lower coils 20, and the lead-out layer wirings 58, respectively, with a plurality of vias 73 connecting the wirings, and vias 74 connecting the shield layer wiring 72 at the lowermost layer and the semiconductor substrate 26.

[0105] Further, resin films 77 are formed on the insulating layer laminate structure 27, namely on the protective film 75 and the passivation film 76. In this embodiment, the resin films 77 are selectively formed on the passivation film 76 so as to integrally cover entireties of the high-voltage regions 36.

[0106] That is, the resin films 77 cover in the plan view of the Fig. 3 the regions overlapping with the respective upper coils 21, the inner regions 32 of the respective upper coils 21, the inter-coil regions 50, and the coil surrounding regions 99. Therefore, in the plan view, both the first pads 33 and the second pads 34 of the high-voltage pads 14, together with the entire respective surroundings thereof, are covered by the resin films 77.

[0107] Openings in the resin films 77 that expose the high-voltage pads 14 coincide or coincide with the pad openings 79. The resin films 77 therefore have overlapping portions 44 and 45 that rest on peripheral edges of the first pads 33 and the second pads 34 of the high-voltage pads 14.

[0108] The protective film 75 is formed, for example, from SiO2 and has a thickness of about 150 nm. The passivation film 76 is formed, for example, from SiN and has a thickness of about 1000 nm. The resin films 77 are formed, for example, from polyimide and have a thickness of about 4000 nm.

[0109] Details of the respective sections of the electronic component 6 are described below.

[0110] As it is in Fig. 2, a large potential difference (for example, approximately 1200 V) is established between the lower coils 20 and the upper coils 21 of the electronic component 6. The insulating layers 28 arranged between the lower coils 20 and the upper coils 21 have a thickness capable of withstanding a voltage such that dielectric breakdown due to the potential difference therebetween will not occur.

[0111] Thus, in this embodiment, a plurality of layers (for example, six layers) of the insulating layers 28 are arranged between the coils, as shown in Fig. 6. Each insulating layer 28 is formed of the laminate structure of the etching stopper film 29 of about 300 nm and the interlayer insulating film 30 of about 2100 nm. By setting a total thickness L2 of the insulating layers 28 to not less than 12.0 µm and not more than 16.8 µm, DC insulation in a vertical direction between the lower coils 20 and the upper coils 21 can be realized.

[0112] A distance L1 between the high-voltage pads 14 and the low-voltage pads 13 is comparatively larger than the total thickness L2 of the insulating layers 28 between the lower coils 20 and the upper coils 21. For example, the distance L1 is generally not less than 100 µm and not greater than 450 µm, and can be expressed as a ratio with respect to the thickness L2 (distance L1 / thickness L2) that is not less than 6 / 1 and not greater than 40 / 1.

[0113] Fig. 8 is a sectional view of the arrangement of the electronic component 6 according to a comparative mode or comparative example of the present invention. Fig. 9 is a sectional view along a line IX-IX in Fig. 8. As it is in the Fig. 8 and Fig. 9, in the electronic component 6 according to the comparative example, the resin films 77 expose peripheries of the second pads 34 of the high-voltage pads 14.

[0114] Fig. 10 is a graph comparing an average dielectric breakdown voltage of the electronic component according to the comparative mode of the present invention and an average dielectric breakdown voltage of the electronic component 6 according to the first unclaimed embodiment. In Fig. 10, the ordinate represents the mean dielectric breakdown voltage [kVrms].

[0115] With reference to Fig. 10, the average dielectric breakdown voltage of the electronic component 6 according to the first preferred embodiment was increased by 7.5% relative to the average dielectric breakdown voltage of the electronic component 6 according to the comparative example. From this, it was found that the average dielectric breakdown voltage can be improved by covering the peripheries of the second pads 34 with the resin films 77.

[0116] Fig. 11 is a graph comparing a variation in the dielectric breakdown voltage of the electronic component 6 according to the comparative example of the present invention and a variation in the dielectric breakdown voltage of the electronic component 6 according to the first unclaimed embodiment. In Fig. 11, the ordinate represents the variation of the mean dielectric breakdown voltage.

[0117] With reference to Fig. 11, the variation in the dielectric breakdown voltage of the electronic component 6 according to the first preferred embodiment was reduced by 27.9% relative to the variation in the dielectric breakdown voltage of the electronic component 6 according to the comparative example. From this, it was found that the variation in the dielectric breakdown voltage can be suppressed or reduced by covering the peripheries of the second pads 34 with the resin films 77.

[0118] Fig. 12 is a diagram for describing the plane structure of upper coils 21 of an electronic component 101 according to a second preferred embodiment of the present invention. In this embodiment, structures corresponding to structures of the electronic component 6 are denoted by the same reference numerals, and description thereof will be omitted.

[0119] In an electronic component in which a low-voltage section and a high-voltage section are arranged or distributed on the same plane or on planes that can be assumed to be essentially the same (hereinafter simply referred to as "on the common plane"), the high-voltage section forms an electric field with the low-voltage section. Therefore, a comparatively high electric field tends to concentrate on the high-voltage section.

[0120] For example, in an electronic component in which a single transformer is arranged by a low-voltage coil and a high-voltage coil facing each other, the high-voltage coil forms an electric field with the low-voltage coil. Therefore, a relatively high or strong electric field tends to concentrate on the high-voltage coil. The occurrence of such an electric field concentration can be detrimental to improving the withstand voltage.

[0121] In this embodiment, an electronic component is therefore provided which enables a weakening of such a concentration of the electric field and an improvement of the withstand voltage.

[0122] Hereinafter, the structure on the first transformer 301 side of the first transformer 301 and the second transformer 302 will be described by way of example. The structure on the second transformer 302 side is the same as the structure on the first transformer 301 side, and therefore, the same reference numerals are provided, and a description thereof will be omitted.

[0123] Furthermore, for convenience of description, hereinafter, one of the two upper coils 21 will be referred to as the first upper coil 21A, and the other upper coil 21 will be referred to as the second upper coil 21B, if necessary. When only the upper coils 21A and 21B are mentioned, it is assumed that both the first upper coil 21A and the second upper coil 21B are included.

[0124] Also, hereinafter, a direction in which the first upper coil 21A and the second upper coil 21B oppose each other is referred to as the "first direction A," and an intersection direction intersecting the first direction A is referred to as the "second direction B." Specifically, the second direction B is an orthogonal direction perpendicular to the first direction A.

[0125] With reference to Fig. 12, the electronic component 101 in this embodiment is a transformer chip that includes transformers. The electronic component 101 includes withstand voltage enhancement structures 102 with conductive properties. Each withstand voltage enhancement structure 102 is formed in a region between low-voltage side elements and high-voltage side elements. The low-voltage side elements include, for example, the low-voltage pads 13, the shielding layer 69, etc., which are fixed to a reference potential or a ground potential.

[0126] The high-voltage side elements include, for example, the high-voltage pads 14, the upper coils 21A and 21B, etc. The withstand voltage improvement structure 102 suppresses or reduces withstand voltage deterioration due to electric fields formed in the region between the low-voltage side elements and the high-voltage side elements.

[0127] More specifically, the withstand voltage improvement structure 102 includes a first withstand voltage improvement structure 103 of the high voltage side and a second withstand voltage improvement structure 104 of the low voltage side. Fig. 12, each first withstand voltage improvement structure 103 and each second withstand voltage improvement structure 104 are shown in a simplified manner.

[0128] The first withstand voltage improvement structure 103 is formed along the upper coils 21A and 21B. The first withstand voltage improvement structure 103 surrounds the upper coils 21A and 21B such that the upper coils 21A and 21B are separated from other regions.

[0129] Specifically, the first withstand voltage improvement structure 103 surrounds the upper coils 21A and 21B and the outer coil end wiring 96 formed between the upper coils 21A and 21B as a whole. That is, the first withstand voltage improvement structure 103 is formed into a ring shape (elliptical ring shape) in plan view.

[0130] The second withstand voltage enhancement structure 104 is formed in a region between the upper coils 21A and 21B and the low-voltage layer wirings 53 (low-voltage pads 13) in plan view. The second withstand voltage enhancement structure 104 extends in a line shape along the first direction A.

[0131] The second withstand voltage enhancement structure 104 is formed along the plurality of low-voltage layer wirings 53 (low-voltage pads 13) in plan view. As a result, the second withstand voltage enhancement structure 104 protrudes further outward in plan view than the outer contours of the low-voltage pads 13.

[0132] The second withstand voltage enhancement structure 104 extends in the line shape along the first direction A such that it runs along the plurality of low-voltage pads 13. The second withstand voltage enhancement structure 104 thereby delimits the plurality of low-voltage pads 13 (low-voltage layer wirings 53) from the upper coils 21A and 21B, respectively.

[0133] The structure of the withstand voltage improvement structure 102 will now be described in more detail with reference to the Fig. 13 to 17 described. Fig. 13 is an enlarged view of a region XIII shown in Fig. 12 is shown. Fig. 14 is an enlarged view of a region XIV shown in Fig. 13 is shown. Fig. Figure 15 is an enlarged view of a region XV shown in Fig. 13 is shown. Fig. 16 is a sectional view along a line XVI-XVI taken in Fig. 12 is shown. Fig. 17 is a sectional view along a line XVII-XVII taken in Fig. 12 is shown.

[0134] In Fig. In Figure 13, outer contours of the upper coils 21A and 21B are shown by thick lines for ease of description. The outer contours of the upper coils 21A and 21B are each formed by outer peripheral edges of spiral patterns 105 of a respective winding forming outermost peripheral portions of the upper coils 21A and 21B.

[0135] In Fig. In Figure 14, an outer contour of a lower coil 20 is shown by a dashed line for ease of description. The outer contour of the lower coil 20 is formed by an outer peripheral edge of a spiral pattern, namely a winding thereof, which forms an outermost periphery of the lower coil 20. Furthermore, in Fig. 14 the first pad 33 and the second pad 34 of a high voltage pad 14 are each shown by dashed lines for ease of description.

[0136] With reference to the Fig. 13 and Fig. 14, the upper coils 21A and 21B each include the corresponding inner coil end 22, the outer coil end 94, and a spiral pattern 105.

[0137] The inner coil ends 22 of the upper coils 21A and 21B are each formed within regions surrounded, in plan view, by outer contours of lower coils 20. The outer coil ends 94 of the upper coils 21A and 21B are each formed in regions outside those regions surrounded, in plan view, by the outer contours of the lower coils 20. The spiral patterns 105 of the upper coils 21A and 21B are each wound or wound outward from the inner coil ends 22 toward the outer coil ends 94.

[0138] The number of turns of the spiral pattern 105 is preferably not less than 5 and preferably not more than 30 (for example, 15). A width of each spiral pattern 105 is preferably not less than 0.5 µm and preferably not more than 5 µm. The width of the spiral pattern 105 is preferably not less than 1 µm and preferably not more than 3 µm. The width of the spiral pattern 105 is defined by a width in a direction perpendicular to a spiral direction.

[0139] A winding pitch or a turn or winding pitch PTL of the spiral pattern 105 is preferably not less than 0.1 µm and preferably not greater than 10 µm. The winding pitch PTL of the spiral pattern 105 is preferably not less than 1 µm and preferably not greater than 3 µm. The winding pitch PTL of the spiral pattern 105 is defined by a distance between two spiral patterns 105 that are mutually adjacent in the direction perpendicular to the spiral direction.

[0140] The inner coil ends 22 of the upper coils 21A and 21B are each connected to the inner coil end wirings 37 via inner connecting portions 106. The inner connecting portions 106 are each led out from the inner coil end wirings 37 toward the inner coil ends 22.

[0141] The outer coil ends 94 of the upper coils 21A and 21B are each connected to the outer coil end wiring 96 via outer connecting portions 107. The outer connecting portions 107 are led outward from the outer coil end wiring 96 toward the outer coil ends 94.

[0142] As described with respect to the first preferred embodiment, the structure of the lower coils 20 is substantially the same as the structure of the upper coils 21A and 21B. A more detailed description of the lower coils 20 will be omitted.

[0143] With reference to the Fig. 13, Fig. 14 and Fig. 17, the first withstand voltage improvement structure 103 is formed within the same insulating layer 28 (interlayer insulating film 30) as the upper coils 21A and 21B. The first withstand voltage improvement structure 103 is formed by a process shared with the upper coils 21A and 21B. Thus, the first withstand voltage improvement structure 103 is formed by an electrode layer shared with the upper coils 21A and 21B.

[0144] The first withstand voltage improvement structure 103 is formed along the outer contours of the upper coils 21A and 21B so that it protrudes further outward in plan view than the outer contours of the lower coils 20 (see dashed line in Fig. 14). Furthermore, the first withstand voltage improvement structure 103 is formed along outer contours of the second pads 34 so that it protrudes further outward in plan view than the outer contours of the second pads 34 (see dashed lines in Fig. 14).

[0145] The first withstand voltage improvement structure 103 completely surrounds the upper coils 21A and 21B and the outer coil end wiring 96 formed between the upper coils 21A and 21B. That is, the first withstand voltage improvement structure 103 is formed into a ring shape (elliptical ring shape) in plan view. The first withstand voltage improvement structure 103 isolates the upper coils 21A and 21B and the outer coil end wiring 96 formed between the upper coils 21A and 21B from other regions.

[0146] More specifically, the first withstand voltage improvement structure 103 includes a first dummy conductor pattern group 109 formed by arranging a plurality (for example, six) of first dummy conductor patterns 108. In the Fig. 16 and Fig. In FIG. 17, portions of the first dummy conductor pattern group 109 are omitted or not specifically labeled for illustration purposes. Each of the plurality of first dummy conductor patterns 108 has a discontinuous pattern with respect to the spiral patterns 105 of the upper coils 21A and 21B.

[0147] The plurality of first dummy conductor patterns 108 are formed at intervals along directions away from the upper coils 21A and 21B. Each first dummy conductor pattern 108 surrounds the upper coils 21A and 21B and the outer coil end wiring 96 formed between the upper coils 21A and 21B. That is, each first dummy conductor pattern 108 is formed into a ring shape (elliptical ring shape) in plan view.

[0148] A width of the first dummy conductor pattern 108 is preferably not less than 0.5 µm and preferably not greater than 5 µm. The width of the first dummy conductor pattern 108 is preferably not less than 1 µm and preferably not greater than 3 µm. The width of the first dummy conductor pattern 108 may be equal to the width of each spiral pattern 105. The width of the first dummy conductor pattern 108 is defined by a width in a direction perpendicular to a direction in which the first dummy conductor pattern 108 extends.

[0149] In this embodiment, each first dummy conductor pattern 108 includes an open portion 110 where the electrode layer is not present. The open portion 110 of each first dummy conductor pattern 108 is formed by a portion of the insulating layer 28 (interlayer insulating film 30). Each first dummy conductor pattern 108 is thereby formed into a shape with ends.

[0150] The first dummy conductor pattern group 109 includes an inner first dummy conductor pattern 108 positioned on the side of the upper coils 21A and 21B, and an outer first dummy conductor pattern 108 positioned on a side opposite to the upper coils 21A and 21B with respect to the inner first dummy conductor pattern 108.

[0151] The outer first dummy conductor pattern 108 extends to block or cover the open portion 110 of the inner first dummy conductor pattern 108 from the outside. The open portion 110 of the outer first dummy conductor pattern 108 is formed in a region different from the open portion 110 of the inner first dummy conductor pattern 108.

[0152] The open sections 110 form open circuits containing the first dummy conductor patterns 108. This means that the open sections 110 prevent a current path from forming in the first dummy conductor patterns 108.

[0153] This suppresses or reduces the generation of noise due to the first dummy conductor patterns 108. Of course, at least one or all of the plurality of first dummy conductor patterns 108 may instead be formed in a continuous form.

[0154] The respective first dummy conductor patterns 108 are connected to the outer coil end wiring 96 via a first dummy connection portion 111. The respective first dummy conductor patterns 108 are thereby set to the same potential as the outer coil ends 94 of the upper coils 21A and 21B.

[0155] The first dummy connection portion 111 is led outward from the outer coil end wiring 96 along any direction. The first dummy connection portion 111 may be led outward in a region different from the outer connection portions 107. In this embodiment, the first dummy connection portion 111 is led out along the second direction B from a region different from the outer connection portion 107.

[0156] The first withstand voltage improvement structure 103 includes a first proximal region 112, a second proximal region 113, a first connection region 114, and a second connection region 115. The first proximal region 112, the second proximal region 113, the first connection region 114, and the second connection region 115 are each formed by the first dummy conductor pattern group 109.

[0157] The first proximal region 112 is located proximal to the first upper coil 21A and extends in a U-shape along the outer contour of the first upper coil 21A. The first proximal region 112 sandwiches the first upper coil 21A from three directions. The first proximal region 112 separates the first upper coil 21A from the low-voltage pads 13 (low-voltage layer wirings 53) and the shielding layer 69.

[0158] The second proximal region 113 is located proximal to the second upper coil 21B and extends in a U-shape along the outer contour of the second upper coil 21B. The second proximal region 113 sandwiches the second upper coil 21B from three directions. The second proximal region 113 abuts the second upper coil 21B opposite the low-voltage pads 13 (low-voltage layer wirings 53) and the shield layer 69.

[0159] The first connection region 114 is formed in a linear shape extending along the first direction A, in a region on the low-voltage pads 13 side with respect to the coil outer end wiring 96. The first connection region 114 connects one end of the first proximal region 112 and one end of the second proximal region 113. The first connection region 114 defines portions of the upper coils 21A and 21B and the coil outer end wiring 96 opposite the low-voltage pads 13 (low-voltage layer wirings 53).

[0160] More specifically, the first connection region 114 is formed along the outer contours of the second pads 34 (see dashed lines in Fig. 14) in the region on the side of the low-voltage pads 13 with respect to the wiring 96 for the outer coil ends.

[0161] The plurality of first dummy conductor patterns 108 included in the first connection region 114 are formed at intervals along a direction away from the second pads 34. The direction away from the second pads 34 is the second direction B.

[0162] The second connection region 115 is formed in a line shape extending along the first direction A in a region on an opposite side of the first connection region 114 with respect to the coil outer end wiring 96. The second connection region 115 connects the other end of the first proximal region 112 and the other end of the second proximal region 113. The second connection region 115 isolates portions of the upper coils 21A and 21B and the coil outer end wiring 96 from the shield layer 69.

[0163] More specifically, the second connection region 115 is formed along the outer contours of the second pads 34 (see the dashed lines in Fig. 14) is formed in the region on the opposite side of the first connecting region 114 with respect to the wiring 96 for outer coil ends.

[0164] The plurality of first dummy conductor patterns 108 included in the second connection region 115 are formed at intervals along a direction away from the second pads 34. The direction away from the second pads 34 is the second direction B.

[0165] The plurality of first dummy conductor patterns 108 included in the first proximal region 112 and the second proximal region 113 are each formed with a first pitch or a first pitch PT1. The first pitch PT1 of the first dummy conductor patterns 108 may be equal to the winding pitch PTL of the spiral pattern 105 (PT1 = PTL).

[0166] The first distance PT1 is defined by a distance between the first dummy conductor pattern 108 located most proximal to the upper coils 21A and 21B and the upper coils 21A and 21B, and by a distance between two first dummy conductor patterns 108 that are mutually adjacent to each other.

[0167] The plurality of first dummy conductor patterns 108 included in the first connection region 114 and the second connection region 115 are formed with second pitches PTa, PTb, PTc, PTd, PTe, and PTf, respectively.

[0168] The second distance PTa is defined by a distance along the second direction B between the first dummy conductor pattern 108 most proximal to the second pads 34 and the second pads 34. The second distances PTb to PTf are each defined by a distance along the second direction B between two first dummy conductor patterns 108 that are mutually adjacent.

[0169] The second distances PTa to PTf can each assume values ​​that differ from the first distance PT1 (PTa to PTf ≠ PT1). The second distances PTa to PTf are preferably not less than 1 µm and preferably not greater than 50 µm. The second distances PTa to PTf can assume various values ​​within a range of not less than 1 µm and not more than 50 µm. The respective values ​​of the second distances PTa to PTf are described in detail below.

[0170] In the first proximal region 112 and the second proximal region 113, a protrusion amount Z1 of the first withstand voltage improvement structure 103 with respect to the outer contours of the lower coils 20 may exceed a value of 0 µm and is preferably not greater than 100 µm (0 µm < Z1 ≤ 100 µm). The protrusion amount Z1 can be adjusted by changing the number of the first dummy conductor patterns 108 and the value of the first pitch PT1 therebetween.

[0171] A configuration example in which the electronic component 101 has a withstand voltage of not less than 5000 V is as follows. The insulating layers 28 can have a dielectric strength of not less than 8 MV / cm and not more than 10 MV / cm.

[0172] The insulating layer 28 may include at least one of SiO2 and SiN. In this case, the protrusion amount Z1 is preferably not less than 10 µm. More specifically, the protrusion amount Z1 is preferably not less than 20 µm.

[0173] The protrusion amount Z1 is defined by a distance in the first proximal region 112 and the second proximal region 113 between the outer contours of the lower coils 20 and an outer peripheral edge of the first dummy conductor pattern 108 forming an outermost periphery of the first withstand voltage improvement structure 103.

[0174] The resin package 2 may have a dielectric strength of not less than 0.1 MV / cm and not more than 0.3 MV / cm. The resin package 2 may contain at least one molded resin made of an epoxy resin, a polyimide resin, and a polybenzoxazole resin. The "dielectric strength" is defined as the maximum electric field strength that can be applied without causing dielectric breakdown (the same applies below).

[0175] The first proximal region 112 of the first withstand voltage improvement structure 103 forms a first coil-side withstand voltage improvement structure 116 that suppresses or alleviates a decrease in withstand voltage on the first upper coil 21A side. Specifically, the first coil-side withstand voltage improvement structure 116 suppresses or alleviates the decrease in withstand voltage due to an electric field formed between the first upper coil 21A and the low-voltage pads 13 (low-voltage layer wirings 53). Furthermore, the first coil-side withstand voltage improvement structure 116 suppresses or alleviates the decrease in withstand voltage due to an electric field formed between the first upper coil 21A and the shield layer 69.

[0176] The second proximal region 113 of the first withstand voltage improvement structure 103 forms a second coil-side withstand voltage improvement structure 117 that suppresses a decrease in the withstand voltage on the second upper coil 21B side. Specifically, the second coil-side withstand voltage improvement structure 117 suppresses the decrease in the withstand voltage due to an electric field formed between the second upper coil 21B and the low-voltage pads 13 (low-voltage layer wirings 53). Furthermore, the second coil-side withstand voltage improvement structure 117 suppresses the decrease in the withstand voltage due to an electric field formed between the second upper coil 21B and the shield layer 69.

[0177] The first connection region 114 of the first withstand voltage improvement structure 103 forms a first pad-side withstand voltage improvement structure 118 that suppresses a decrease in the withstand voltage on the second pads 34 side. Specifically, the first pad-side withstand voltage improvement structure 118 suppresses the decrease in the withstand voltage due to an electric field formed between the outer coil end wiring 96 and the low-voltage pads 13 (low-voltage layer wirings 53). Furthermore, the first pad-side withstand voltage improvement structure 118 suppresses the decrease in the withstand voltage due to an electric field formed between the second pads 34 and the shield layer 69.

[0178] The second connection region 115 of the first withstand voltage enhancement structure 103 forms a second pad-side withstand voltage enhancement structure 119 that suppresses a decrease in the withstand voltage on the second pad 34 side. Specifically, the second pad-side withstand voltage enhancement structure 119 suppresses the decrease in the withstand voltage due to the electric field formed between the second pads 34 and the shield layer 69.

[0179] With reference to the Fig. 13, Fig. 15 and Fig. 17, the second withstand voltage improvement structure 104 is formed inside the same insulating layer 28 (interlayer insulating film 30) as the upper coils 21A and 21B. The second withstand voltage improvement structure 104 is formed by a process shared with the upper coils 21A and 21B. The second withstand voltage improvement structure 104 is thus formed by the electrode layer shared with the upper coils 21A and 21B.

[0180] The second withstand voltage improvement structure 104 includes a second dummy conductor pattern group 122 formed by arranging a plurality (for example, three) of second dummy conductor patterns 121. In the Fig. 16 and Fig. 17, portions of the second dummy conductor pattern group 122 are not shown. Each of the plurality of second dummy conductor patterns 121 has a discontinuous pattern with respect to the spiral patterns 105 of the upper coils 21A and 21B.

[0181] Each of the plurality of second dummy conductor patterns 121 includes a line-shaped pattern extending in the first direction A. The plurality of second dummy conductor patterns 121 are arranged at intervals from each other along the second direction B.

[0182] The width of each second dummy conductor pattern 121 is preferably not less than 0.5 µm and preferably not greater than 5 µm. The width of the second dummy conductor pattern 121 is preferably not less than 1 µm and preferably not greater than 3 µm. The width of the second dummy conductor pattern 121 may be equal to the width of each spiral pattern 105.

[0183] The width of the second dummy conductor patterns 121 may be equal to the width of each first dummy conductor pattern 108. The width of the second dummy conductor patterns 121 is defined by a width in a direction perpendicular to a direction in which the second dummy conductor patterns 121 extend. The direction perpendicular to the direction in which the second dummy conductor patterns 121 extend is the second direction B.

[0184] The plurality of second dummy conductor patterns 121 are each formed with a third pitch PT3. The third pitch PT3 may be equal to the winding pitch PTL of the spiral pattern 105 (PT3 = PTL).

[0185] The third distance PT3 is defined by a distance between the second dummy conductor pattern 121 facing most proximally to the low-voltage pads 13 and the low-voltage pads 13, and by a distance between two second dummy conductor patterns 121 that are mutually adjacent.

[0186] Each second dummy conductor pattern 121 is formed into a shape with ends. This creates open circuits that contain the second dummy conductor patterns 121. That is, the open circuits prevent a current path from forming in the second dummy conductor patterns 121a.

[0187] This suppresses the generation of noise due to the second dummy conductor patterns 121. Of course, at least one or all of the plurality of second dummy conductor patterns 121 may instead have a continuous shape.

[0188] The respective second dummy conductor patterns 121 are connected to a low-voltage layer wiring 53 via a second dummy connection section 123. The respective second dummy conductor patterns 121 are thereby set to the same potential as the low-voltage pads 13 (low-voltage layer wiring 53).

[0189] The second dummy connection portion 123 is led out from any low-voltage layer wiring 53 toward a region on the side of the upper coils 21A and 21B. In this embodiment, the second dummy connection portion 123 is led out from the low-voltage layer wiring 53 corresponding to the outer coil end wiring 97 of the lower coils 20.

[0190] In this embodiment, the second dummy connection portion 123 is led out in a line shape along the second direction B. One or a plurality of the second dummy connection portions 123 may be led out of one or a plurality of the low-voltage layer wirings 53.

[0191] A protrusion amount Z2 of the second withstand voltage improvement structure 104 is preferably greater than 0 µm and preferably not greater than 50 µm (0 µm < Z2 ≤ 50 µm). The protrusion amount Z2 of the second withstand voltage improvement structure 104 is defined by a distance in the second direction B between the outer contours of the low-voltage pads 13 and a peripheral edge on the side of the upper coils 21A and 21B of the second dummy conductor pattern 121 that is most proximal to the upper coils 21A and 21B.

[0192] The second withstand voltage improvement structure 104 suppresses the decrease in withstand voltage due to the electric field formed between the first upper coil 21A and the low-voltage pads 13 (low-voltage layer wirings 53). Furthermore, the second withstand voltage improvement structure 104 suppresses the decrease in withstand voltage due to the electric field formed between the second upper coil 21B and the low-voltage pads 13 (low-voltage layer wirings 53). Furthermore, the second withstand voltage improvement structure 104 suppresses the decrease in withstand voltage due to the electric field formed between the second pads 34 and the low-voltage pads 13 (low-voltage layer wirings 53).

[0193] Next, a relationship between the withstand voltage enhancement structure 102 and the electric field strength, as well as a relationship between the withstand voltage enhancement structure 102 and the dielectric breakdown resistance, will be described in more detail. It is assumed that the electric field strength includes a peak value of the electric field strength.

[0194] Although a description regarding the first coil-side withstand voltage improvement structure 116 is provided below by way of example, the same description also applies to the second coil-side withstand voltage improvement structure 117. Therefore, it is assumed that the description relating to the first coil-side withstand voltage improvement structure 116 is applied to a description relating to the second coil-side withstand voltage improvement structure 117, and a description concerning the second coil-side withstand voltage improvement structure 117 is omitted.

[0195] Although a description of the first pad-side withstand voltage improvement structure 118 is provided below by way of example, the same description also applies to the second pad-side withstand voltage improvement structure 119. Therefore, it is assumed that the description relating to the first pad-side withstand voltage improvement structure 118 is applied to a description relating to the second pad-side withstand voltage improvement structure 119, and the description of the second pad-side withstand voltage improvement structure 119 is omitted.

[0196] In order to examine a relationship between the protrusion amount Z1 of the first withstand voltage improvement structure 103 and the electric field strength in the first coil-side withstand voltage improvement structure 116, six samples A1, B1, C1, D1, E1 and F1 were prepared as shown in Table 1 below. [Table 1] [Table 1] Probe A1 B1 C1 D1 E1 F1 Vorsprungs-Betrag Z1 0 µm 10 µm 20 µm 30 µm 40 µm 50 µm

[0197] Sample A1 is an electronic component according to a reference example. The electronic component according to the reference example has the same structure as the electronic component 101 according to the present preferred embodiment, except that it does not include the withstand voltage improvement structure 102. Description will be omitted regarding the structure of the electronic component of the reference example (the same applies below).

[0198] Sample B1 is the electronic component 101 in which the protrusion amount Z1 of the first withstand voltage improvement structure 103 is set to 10 µm. Sample C1 is the electronic component 101 in which the protrusion amount Z1 of the first withstand voltage improvement structure 103 is set to 20 µm.

[0199] Sample D1 is the electronic component 101 in which the protrusion amount Z1 of the first withstand voltage improvement structure 103 is set to 30 µm. Sample E1 is the electronic component 101 in which the protrusion amount Z1 of the first withstand voltage improvement structure 103 is set to 40 µm. Sample F1 is the electronic component 101 in which the protrusion amount Z1 of the first withstand voltage improvement structure 103 is set to 50 µm.

[0200] Fig. 18 is a graph showing a relationship between the protrusion amount Z1 of the first withstand voltage improvement structure 103 and the electric field strength, determined by simulation. Fig. 18, the ordinate represents the electric field strength [kV / mm], and the abscissa represents a distance [µm] between the first withstand voltage improvement structure 103 and the shielding layer 69.

[0201] Hereinafter, outer contours (outermost peripheral edges) of the upper coils 21A and 21B are simply referred to as the "upper coil ends." Furthermore, an outer contour (outermost peripheral edge) of the first withstand voltage enhancement structure 103 is simply referred to as the "first withstand voltage enhancement structure end." Likewise, an inner contour (inner peripheral edge) of the shield layer 69 is simply referred to as the "shield layer end."

[0202] In Fig. 18 shows a first curve LN1, a second curve LN2, a third curve LN3, a fourth curve LN4, a fifth curve LN5 and a sixth curve LN6.

[0203] The first curve LN1 represents the simulation results for sample A1. The second curve LN2 represents the simulation results for sample B1. The third curve LN3 represents the simulation results for sample C1.

[0204] The fourth curve LN4 represents the simulation results for sample D1. The fifth curve LN5 represents the simulation results for sample E1. The sixth curve LN6 represents the simulation results for sample F1.

[0205] Referring to the first curve LN1, the electric field strength at sample A1 on the coil upper end side was 56 kV / mm. Referring to the second curve LN2, the electric field strength of sample B1 at the first withstand voltage enhancement structure end was 34 kV / mm. Referring to the third curve LN3, the electric field strength of sample C1 at the first withstand voltage enhancement structure end was 28 kV / mm.

[0206] Referring to the fourth curve LN4, the electric field strength of sample D1 at the first withstand voltage enhancement structure end was 28 kV / mm. Referring to the fifth curve LN5, the electric field strength of sample E1 at the first withstand voltage enhancement structure end was 28 kV / mm. Referring to the sixth curve LN6, the electric field strength of sample F1 at the first withstand voltage enhancement structure end was 28 kV / mm.

[0207] The electric field strength at the upper coil ends of sample A1 was thus higher than the electric field strengths of samples B1 to F1. This means that in sample A1, which does not have the first withstand voltage enhancement structure 103, the electric field concentration at the upper coil ends was significant. On the other hand, it was found that the electric field concentration at the upper coil ends was relaxed in samples B1 to F1, each of which has the first withstand voltage enhancement structure 103.

[0208] Referring to the first curve LN1, the electric field strength of sample A1 at the shielding layer end was 20 kV / mm. Referring to the second curve LN2, the electric field strength of sample B1 at the shielding layer end was 24 kV / mm. Referring to the third curve LN3, the electric field strength of sample C1 at the shielding layer end was 26 kV / mm.

[0209] Referring to the fourth curve LN4, the electric field strength of sample D1 at the shielding layer end was 28 kV / mm. Referring to the fifth curve LN5, the electric field strength of sample E1 at the shielding layer end was 29 kV / mm. Referring to the sixth curve LN6, the electric field strength of sample F1 at the shielding layer end was 30 kV / mm.

[0210] The electric field strength at the shielding layer end increased proportionally with the increase in the protrusion amount Z1 of the first withstand voltage improvement structure 103. These results are consistent with the physical law that the electric field is inversely proportional to distance.

[0211] As described above, from the first curve LN1 to the sixth curve LN6, it was found that the electric field concentration at the upper coil ends is weakened as long as the protrusion amount Z1 of the first withstand voltage enhancement structure 103 is not set to zero (ie, as long as the protrusion amount Z1>0). On the other hand, when the protrusion amount Z1 of the first withstand voltage enhancement structure 103 exceeds 20 μm, the electric field strength at the first withstand voltage enhancement structure end converged to approximately 28 kV / mm.

[0212] That is, it was found that when the protrusion amount Z1 of the first withstand voltage improvement structure 103 exceeds a certain value (20 μm in this case), the electric field strength on the first withstand voltage improvement structure 103 side is determined by the distance between the first withstand voltage improvement structure end and the shielding layer end. This is also one of the reasons why the electric field strength at the shielding layer end increased.

[0213] The results of the Fig. 18 can be summarized as follows. It is preferable to provide the first withstand voltage improvement structure 103 (first coil-side withstand voltage improvement structure 116). Therefore, trailing ends of the electric fields formed between the upper coils 21A and 21B and the lower coils 20 can be shifted from the upper coils 21A and 21B side to the first withstand voltage improvement structure 103.

[0214] Furthermore, the first withstand voltage improvement structure 103 protrudes outward from the outer contours of the upper coils 21A and 21B. The electric fields formed between the lower coils 20 and the upper coils 21A and 21B can thus be shielded by the first withstand voltage improvement structure 103. The formation of the electric field in such a way that it wraps around end portions of the upper coils 21A and 21B can thereby be suppressed.

[0215] As a result, the electric field concentration at the upper coils 21A and 21B can be reduced. Specifically, the electric field concentration at the upper coil ends (first withstand voltage enhancement structure end) in the region between the upper coils 21A and 21B and the low-voltage pads 13 can be reduced. Furthermore, the electric field concentration at the upper coil ends (first withstand voltage enhancement structure end) in the region between the upper coils 21A and 21B and the shield layer 69 can be reduced.

[0216] Preferably, the protrusion amount Z1 of the first withstand voltage enhancement structure 103 exceeds a value of 0 µm. The phrase "the protrusion amount Z1 exceeds 0 µm" means that a first dummy conductor pattern 108 is formed.

[0217] The protrusion amount Z1 of the first withstand voltage enhancement structure 103 is preferably not less than 10 μm, and preferably not more than 50 μm. In this case, the electric field strength at the first withstand voltage enhancement structure end becomes not greater than 34 kV / mm, and the electric field concentration at the upper coil ends can be mitigated. Furthermore, in this case, an absolute value of a difference between the electric field strength at the first withstand voltage enhancement structure end and the electric field strength at the shield layer end becomes not more than 15 kV / mm.

[0218] The protrusion amount Z1 of the first withstand voltage enhancement structure 103 is preferably not less than 20 μm, and preferably not more than 50 μm. In this case, the electric field strength at the first withstand voltage enhancement structure end becomes not greater than 30 kV / mm, and the electric field concentration at the upper coil ends can be mitigated. Also in this case, the absolute value of the difference between the electric field strength at the first withstand voltage enhancement structure end and the electric field strength at the shield layer end becomes not greater than 5 kV / mm.

[0219] In order to investigate a relationship between the second withstand voltage improvement structure 104 and the electric field strength, four samples A2, B2, C2 and D2 were prepared as shown in Table 2 below. [Table 2] [Table 2] Probe A2 B2 C2 D2 Anzahl von zweiten Dummy-Mustern 121 0 Stück 3 Stück 6 Stück 12 Stück

[0220] Sample A2 is the electronic component according to the reference example. Sample B2 is the electronic component 101 containing three second dummy conductor patterns 121. Sample C2 is the electronic component 101 containing six second dummy conductor patterns 121. Sample D2 is the electronic component 101 containing twelve second dummy conductor patterns 121.

[0221] Fig. Figure 19 is a graph showing a relationship between the number of second dummy conductor patterns 121 and the electric field strength, determined by simulation. Fig. 19, the ordinate represents the electric field strength [kV / mm], and the abscissa represents the number [pieces] of the second dummy conductor patterns 121.

[0222] Hereinafter, the peripheral edges of the low-voltage pads 13 on the side of the upper coils 21A and 21B are simply referred to as "low-voltage pad ends." Likewise, the peripheral edge of the second withstand voltage enhancement structure 104 on the side of the upper coils 21A and 21B is simply referred to as the "second withstand voltage enhancement structure end."

[0223] In Fig. 19, a first plotted point P1, a second plotted point P2, a third plotted point P3 and a fourth plotted point P4 are shown.

[0224] The first plotted point P1 represents the electric field strength at the low-voltage pad ends in sample A2. The second plotted point P2 represents the electric field strength at the second withstand voltage enhancement structure end in sample B2.

[0225] The third plotted point P3 represents the electric field strength at the second withstand voltage enhancement structure end in sample C2. The fourth plotted point P4 represents the electric field strength at the second withstand voltage enhancement structure end in sample D2.

[0226] Referring to the first plotted point P1, the electric field strength at the low-voltage pad ends in Sample A2 was 45 kV / mm. Referring to the second plotted point P2, the electric field strength in Sample B2 at the second withstand voltage enhancement structure end was 30 kV / mm.

[0227] Referring to the third plotted point P3, the electric field strength in sample C2 at the second withstand voltage enhancement structure end was 35 kV / mm. Referring to the fourth plotted point P4, the electric field strength in sample D2 at the second withstand voltage enhancement structure end was 38 kV / mm.

[0228] The electric field strength at the low-voltage pad ends of sample A2 was thus higher than the electric field strengths at the second withstand voltage enhancement structure ends of samples B2 to D2. This means that in sample A2, which lacks the second withstand voltage enhancement structure end, the electric field concentration at the low-voltage pad ends was significant. On the other hand, it was found that the electric field concentration at the low-voltage pad ends was weakened in samples B2 to D2, each of which has the second withstand voltage enhancement structure end.

[0229] Although not shown, the electric field strength at the upper coil ends of sample B2 was 25 kV / mm. Although not shown, the electric field strength at the upper coil ends of sample C2 was 30 kV / mm. Although not shown, the electric field strength at the upper coil ends of sample D2 was 31 kV / mm.

[0230] The electric field strength at the upper end of the coil increased proportionally with an increase in the number of the second dummy conductor patterns 121. These results are consistent with the physical law that the electric field is inversely proportional to distance.

[0231] As described above, it was found that the electric field concentration at the low-voltage pads 13 is already weakened by forming the second withstand voltage enhancement structure 104. On the other hand, it was found that the effect of suppressing the electric field concentration at the low-voltage pads 13 is not necessarily improved by increasing the number of the second dummy conductor patterns 121.

[0232] The results of the Fig. 19 can be summarized as follows. It is preferable to provide the second withstand voltage enhancement structure 104. Therefore, the electric field concentration at the low-voltage pad ends (second withstand voltage holding region end) can be mitigated in the region between the low-voltage pads 13 and the upper coils 21A and 21B. Furthermore, the electric field concentration at the low-voltage pad ends (second withstand voltage holding region end) can be mitigated in a region between the low-voltage pads 13 and the second pads 34.

[0233] Preferably, the protrusion amount Z2 of the second withstand voltage enhancement structure 104 exceeds a value of 0 µm. That is, the phrase "the protrusion amount Z2 exceeds 0 µm" practically means that a second dummy conductor pattern 121 is formed.

[0234] The number of second dummy conductor patterns 121 is preferably not more than 12. In this case, the protrusion amount Z2 of the second withstand voltage improvement structure 104 may exceed 0 μm and is preferably not more than 50 μm. In this case, the electric field strength at the second withstand voltage improvement structure 104 becomes not more than 35 kV / mm, and the electric field concentration at the low-voltage pad ends (second withstand voltage holding region end) can be alleviated. In this case, an absolute value of a difference between the electric field strength at the second withstand voltage improvement structure end and the electric field strength at the upper coil ends is preferably not more than 10 kV / mm.

[0235] The number of second dummy conductor patterns 121 is preferably not more than 6. In this case, it is preferable that the protrusion amount Z2 of the second withstand voltage enhancement structure 104 exceeds a value of 0 μm and is not greater than 25 μm. In this case, the electric field strength at the low-voltage pad ends becomes not greater than 35 kV / mm, and the electric field concentration at the low-voltage pad ends (second withstand voltage holding region end) can be alleviated. In this case, it is preferable that the absolute value of the difference between the electric field strength at the second withstand voltage enhancement structure end and the electric field strength at the upper coil ends is not greater than 5 kV / mm.

[0236] The number of second dummy conductor patterns 121 may be no more than three. In this case, it is preferable that the protrusion amount Z2 of the second withstand voltage enhancement structure 104 exceeds a value of 0 μm and is no more than 10 μm. In this case, the electric field strength at the low-voltage pad ends becomes no more than 30 kV / mm, and the electric field concentration at the low-voltage pad ends (second withstand voltage holding region end) can be mitigated. In this case, the absolute value of the difference between the electric field strength at the second withstand voltage enhancement structure end and the electric field strength at the upper coil ends may be no more than 5 kV / mm.

[0237] In order to verify a relationship between the first pad-side withstand voltage enhancement structure 118 and the electric field strength, three samples A3, B3 and C3 were prepared as shown in Table 3 below. With the three samples A3, B3 and C3, the second distances PTa to PTf (see also Fig. 14) are each set to the values ​​given in Table 3 below.

[0238] Hereinafter, end portions of the second pads 34 on the low-voltage pads 13 side (low-voltage layer wirings 53) are simply referred to as the "second pad ends." Likewise, an end portion of the first pad-side withstand voltage enhancement structure 118 (first withstand voltage enhancement structure 103) on the low-voltage pads 13 side (low-voltage layer wirings 53) is simply referred to as the "first pad-side withstand voltage enhancement structure end." [Table 3] [Table 3] Bezugsbeispiel Probe A3 Probe B3 Sample C3 Second distance PTa 20 µm 1 µm 5 µm Second distance PTb 20 µm 10 µm 10 µm Second distance PTc 20 µm 20 µm 30 µm Second distance PTd 20 µm 20 µm 30 µm Second distance PTe 10 µm 20 µm 10 µm Second distance PTf 1 µm 20 µm 5 µm Total value 91 µm 91 µm 90 µm Electric field strength 66 kV / mm 25 kV / mm 9 kV / mm 5 kV / mm

[0239] Here, the electric field strength at the first pad-side withstand voltage enhancement structure end (second pad ends) was determined for samples A3 to C3. The electric field strength at the second pad end of the electronic component according to the reference example is also shown in Table 3.

[0240] The electric field strength at the first pad-side withstand voltage enhancement structure end in Sample A3 was 25 kV / mm. The electric field strength at the first pad-side withstand voltage enhancement structure end in Sample B3 was 9 kV / mm. The electric field strength at the first pad-side withstand voltage enhancement structure end in Sample C3 was 5 kV / mm.

[0241] From the above, it was found that even if the total values ​​of the second distances PTa to PTf are set to be substantially the same, the electric field strength at the second pad ends changes when the values ​​of the second distances PTa to PTf are made different.

[0242] In particular, it was found that the electric field strength at the second pad ends can be appropriately attenuated by setting the second distance PTa to not more than 10 µm, as in Sample B3 and Sample C3.

[0243] The results of Table 3 can be summarized as follows. It is preferable to form the first pad-side withstand voltage enhancement structure 118 (first withstand voltage enhancement structure 103) along the second pads 34. This can mitigate the concentration of the electric field at the second pad ends.

[0244] Preferably, the second distance PTa between the first dummy conductor pattern 108 located most proximal to the second pads 34 and the second pads 34 is not greater than the second distances PTb to PTf. The trailing ends of the electric fields formed between the upper coils 21A and 21B and the lower coils 20 can thereby be shifted from the second pad ends toward the first dummy conductor pattern 108 located most proximal to the second pad ends. The concentration of the electric field at the second pad ends can thereby be appropriately attenuated.

[0245] Furthermore, the second distance PTa is preferably no more than a distance L2 in the vertical direction between the upper coils 21A and 21B and the lower coils 20 (PTa ≤ L2). The distance L2 in the vertical direction is the total thickness L2 of the insulating layers 28 between the lower coils 20 and the upper coils 21.

[0246] The second distance PTa at the most proximal point to the second pads 34 is preferably no greater than 10 µm (PTa ≤ 10 µm). The electric field strength at the first pad-side withstand voltage enhancement structure end thereby becomes no greater than 10 kV / mm, and the electric field strength at the second pad ends can be effectively reduced.

[0247] The second distances PTa to PTf of the first pad-side withstand voltage enhancement structure 118 do not necessarily need to be set to the values ​​specified in Table 3 above. The second distances PTa to PTf of the first pad-side withstand voltage enhancement structure 118 may be set to any of various values ​​based on the electric field strength to be mitigated between the second pads 34 and the low-voltage pads 13.

[0248] The second distances PTa to PTf of the second pad-side withstand voltage improvement structure 119 do not necessarily have to be the same as the second distances PTa to PTf of the first pad-side withstand voltage improvement structure 118. The second distances PTa to PTf of the second pad-side withstand voltage improvement structure 119 may be set to any of various values ​​based on the electric field strength to be mitigated between the second pads 34 and the shield layer 69.

[0249] Fig. 20 is a graph comparing an average dielectric breakdown voltage of the electronic component according to the reference example of the present invention and an average dielectric breakdown voltage of the electronic component 101. In Fig. 20, the ordinate represents the mean dielectric breakdown voltage [kVrms].

[0250] With reference to Fig.20, the average dielectric breakdown voltage of the electronic component 101 was increased by 6.2% relative to the average dielectric breakdown voltage of the electronic component according to the reference example. From this, it was found that the average dielectric breakdown voltage can be improved by the withstand voltage improvement structure 102.

[0251] As described above, in the electronic component 101, the electric field concentration at respective elements can be mitigated by the withstand voltage improvement structure 102. Thus, the electronic component 101 that enables improvement in dielectric breakdown resistance can be provided.

[0252] Fig. 21 is a representation of a section corresponding Fig.16 is a sectional view of an electronic component 131 according to a third preferred embodiment of the present invention. In this embodiment, structures corresponding to structures of the electronic component 101 are denoted by the same reference numerals, and description thereof will be omitted.

[0253] With reference to Fig. 21, the electronic component 131 includes the resin films 77 (see also Fig. 3, etc.). In this embodiment, each resin film 77 overlaps with each first withstand voltage improvement structure 103 in plan view. More specifically, the resin film 77 covers the first withstand voltage improvement structure 103 entirely.

[0254] The upper coils 21A and 21B and the first withstand voltage improving structure 103 are thus arranged within a region surrounded by an outer peripheral edge of the resin film 77 in plan view.

[0255] The resin film 77 may cover a front surface of a portion of the insulating layer laminate structure 27. The resin film 77 may cover the entire front surface of the insulating layer laminate structure 27.

[0256] With the electronic component 131 described above, the same effects as those described in connection with the first preferred embodiment can be exhibited or realized, in addition to the effects described in connection with the second preferred embodiment.

[0257] Fig. 22 is a representation of a section corresponding Fig.14 is a diagram for describing the plane structure of an electronic component 141 on the first upper coil 21A side according to a fourth preferred embodiment of the present invention. In this embodiment, structures corresponding to those of the electronic component 101 are denoted by the same reference numerals, and description thereof will be omitted.

[0258] In the electronic component 141, the spiral pattern 105 of each of the upper coils 21A and 21B includes a first spiral pattern 142 and a second spiral pattern 143. The first spiral pattern 142 is laid out to be wound or wound outward in regions opposite to the lower coils 20 in plan view.

[0259] The second spiral pattern 143 is routed such that it continuously winds or wraps outward from the first spiral pattern 142, specifically in regions that, in plan view, lie outside the lower coils 20. The second spiral pattern 143 is connected to the outer coil end wiring 96.

[0260] The first withstand voltage improvement structure 103 may include the second spiral pattern 143. That is, the first coil-side withstand voltage improvement structure 116 and the second coil-side withstand voltage improvement structure 117 may each include the second spiral pattern 143.

[0261] In this embodiment, a total protrusion amount Z4 of the second spiral pattern 143 and the first withstand voltage improvement structure 103 is applied with respect to the outer contours of the lower coils 20 instead of the protrusion amount Z1. The total protrusion amount Z4 preferably exceeds 0 µm and is preferably not more than 100 µm.

[0262] The total protrusion amount Z4 is defined by a sum (= Z3 + Z1) of a protrusion amount Z3 of the second spiral pattern 143 with respect to the outer contours of the lower coils 20 and a protrusion amount Z1 of the first withstand voltage improvement structure 103 with respect to the outer contours of the second spiral pattern 143 (outer contours of the upper coils 21A and 21B).

[0263] The total protrusion amount Z4 can be adjusted by changing the number of turns and the winding pitch PTL of the second spiral pattern 143. The total protrusion amount Z4 can be adjusted by changing the number of the first dummy conductor patterns 108 and the value of the first pitch PT1 thereof.

[0264] Next, a relationship between the second spiral pattern 143 and the electric field strength will be described. Here, to verify the relationship between the second spiral pattern 143 and the electric field strength, three samples A4, B4, and C4 were prepared, which were Fig. 23, Fig. 24 and 25 respectively.

[0265] Fig. Fig. 23 is a plan view of an upper coil 21 (upper coil 21A or 21B) of the sample A4 of the electronic component 141 used in Fig. 22 is shown. Fig.Fig. 24 is a plan view of an upper coil 21 (upper coil 21A or 21B) of the sample B4 of the electronic component 141 used in Fig. 22 is shown. Fig. Fig. 25 is a plan view of an upper coil 21 (upper coil 21A or 21B) of the sample C4 of the electronic component 141 used in Fig. 22 is shown.

[0266] In each of the Fig. 23, Fig. 24 and Fig. 25, the upper coil 21 is represented by an elliptical ring shape, and the outer contour of a lower coil 20 is represented by a dashed line for ease of description. The structure of the lower coils 20 is the same as the structure of the upper coils 21A and 21B, except for a difference in the number of turns, and therefore, a specific description will be given regarding the Fig. 23, Fig. 24 and Fig. 25 omitted.

[0267] Both Fig. 23, Fig. 24 and Fig.25, in order to verify the relationship between the second spiral pattern 143 and the electric field strength, the first withstand voltage improvement structure 103 is not formed. That is, the protrusion amount Z1 of the first withstand voltage improvement structure 103 is zero (protrusion amount Z1 = 0).

[0268] With reference to Fig. 23, in sample A4, the number of turns of the lower coil 20 is exactly 13. On the other hand, in the upper coils 21A and 21B, the number of turns of the first spiral pattern 142 is exactly 13 and the number of turns of the second spiral pattern 143 is 2. The total protrusion amount Z4 is not less than 8 µm and not more than 13 µm (in this case, about 10 µm).

[0269] With reference to Fig.24, in sample B4, the number of turns of the lower coil 20 is exactly 10. On the other hand, in the upper coils 21A and 21B, the number of turns of the first spiral pattern 142 is exactly 10 and the number of turns of the second spiral pattern 143 is 5. The total protrusion amount Z4 is not less than 17 µm and not more than 23 µm (here, about 20 µm).

[0270] With reference to Fig. 25, in the sample C4, the number of turns of the lower coil 20 is exactly 7. On the other hand, in the upper coils 21A and 21B, the number of turns of the first spiral pattern 142 is exactly 7 and the number of turns of the second spiral pattern 143 is 8. The total protrusion amount Z4 is not less than 27 µm and not more than 33 µm (here, about 30 µm).

[0271] Fig. Figure 26 is a graph of the results of measurements of the electric field strength of sample A4, sample B4, and sample C4. Fig.26, the ordinate represents the electric field strength [kV / mm], and the abscissa represents the total projection amount Z4 [µm].

[0272] In Fig. 26, a first plotted point P11, a second plotted point P12, a third plotted point P13 and a fourth plotted point P14 are shown.

[0273] The first plotted point P11 represents the electric field strength at the upper coil ends of the electronic component according to the reference example. The second plotted point P12 represents the electric field strength at end portions of the second spiral pattern 143 of Sample A4.

[0274] The third plotted point P13 represents the electric field strength at the end portions of the second spiral pattern 143 of sample B4. The fourth plotted point P14 represents the electric field strength at the end portions of the second spiral pattern 143 of sample C4.

[0275] Referring to the first plotted point P11, the electric field strength at the upper coil ends in the electronic component according to Reference Example was 66 kV / mm.

[0276] Referring to the second plotted point P12, the electric field strength at the end portions of the second spiral pattern 143 of Sample A4 was not less than 30 kV / mm and not more than 35 kV / mm.

[0277] Referring to the third plotted point P13, the electric field strength at the end portions of the second spiral pattern 143 of Sample B4 was not less than 25 kV / mm and not more than 30 kV / mm.

[0278] Referring to the fourth plotted point P14, the electric field strength at the end portions of the second spiral pattern 143 of the sample C4 was not less than 25 kV / mm and not more than 30 kV / mm.

[0279] The electric field strength at the upper coil ends of the electronic component according to the reference example was thus higher than the respective electric field strengths of the three samples A4, B4, and C4. This means that in the electronic component according to the reference example, which does not have the second spiral pattern 143, the electric field concentration at the upper coil ends was significant. On the other hand, it was found that in samples A4, B4, and C4, each of which has the second spiral pattern 143, the electric field concentration is mitigated by the second spiral pattern 143.

[0280] From the above, it was found that the concentration of the electric field at the upper coil ends is weakened as long as the total projection amount Z4 is not set to zero.

[0281] Fig.27 is a graph showing the average dielectric breakdown voltage of the electronic component according to the reference example of the present invention, an average dielectric breakdown voltage of Sample A4 used in Fig. 23, an average dielectric breakdown voltage of sample B4, which is shown in Fig. 24 and an average dielectric breakdown voltage of sample C4 shown in Fig. 25 is shown. In Fig. 27, the ordinate represents the mean dielectric breakdown voltage [kVrms].

[0282] With reference to Fig.27, the average dielectric breakdown voltage of sample A4 was increased by 6.5% relative to the average dielectric breakdown voltage of the electronic component according to the reference example. The average dielectric breakdown voltage of sample B4 was increased by 9.7% relative to the average dielectric breakdown voltage of the electronic component according to the reference example.

[0283] The average dielectric breakdown voltage of sample C4 was increased by 10.0% with respect to the average dielectric breakdown voltage of the electronic component according to the reference example.

[0284] From this, it was found that the average dielectric breakdown voltage can be increased, ie, the dielectric breakdown resistance can be improved, by increasing or enlarging the total projection amount Z4.

[0285] The results of the Fig. 26 and Fig.27 can be summarized as follows. Both the first coil-side withstand voltage improvement structure 116 and the second coil-side withstand voltage improvement structure 117 may include the second spiral pattern 143 of the upper coils 21A and 21B. Since the electric field strength is inversely proportional to the distance, it is preferable to provide the first withstand voltage improvement structure 116 and / or the second spiral pattern 143 in accordance with the electric field strength to be attenuated.

[0286] The concentration of the electric field at the second spiral pattern 143 can therefore be reduced in a region between the second spiral pattern 143 and the low-voltage pads 13. Furthermore, the concentration of the electric field at the second spiral pattern 143 can be reduced in a region between the second spiral pattern 143 and the shielding layer 69.

[0287] The total protrusion amount Z4 is preferably not less than 5 µm and not more than 11 µm. In this case, the electric field strength at the end portions of the second spiral pattern 143 is not less than 30 kV / mm and not more than 35 kV / mm.

[0288] The total protrusion amount Z4 is preferably not less than 17 µm and not more than 23 µm. In this case, the electric field strength at the end portions of the second spiral pattern 143 is not less than 25 kV / mm and not more than 30 kV / mm.

[0289] The total protrusion amount Z4 is preferably not less than 27 µm and not more than 33 µm. In this case, the electric field strength at the end portions of the second spiral pattern 143 is not less than 25 kV / mm and not more than 30 kV / mm.

[0290] As described above, the electronic component 141 can exhibit substantially the same effects as those described with respect to the second embodiment.

[0291] In this embodiment, by setting the total projection amount Z4, the number of turns of the upper coils 21 was made larger than the number of turns of the lower coils 20 under the condition that a wire width and a pitch width of the lower coils 20 and a wire width and a pitch width of the upper coils 21 are each the same.

[0292] However, when setting the total projection amount Z4, at least one of the wire width, the pitch width, and the number of turns of the upper coils 21 may be changed. Furthermore, to set the total projection amount Z4, at least one of the wire width, the pitch width, and the number of turns of the lower coils 20 may be changed.

[0293] Furthermore, the respective conditions of the lower coils 20 and the respective conditions of the upper coils 21 can be changed, respectively. In one configuration example, the wire width of the upper coils 21 can be set to a larger value than the wire width of the lower coils 20, while the number of turns of the lower coils 20 and the number of turns of the upper coils 21 are set to the same value.

[0294] In one configuration example, the pitch width of the upper coils 21 may be set to a larger value than the pitch width of the lower coils 20, while the wire width and the number of turns of the lower coils 20 and the wire width and the number of turns of the upper coils 21 are each set to the same values.

[0295] It is understood that in order to increase the total projection amount Z4, at least two of the number of turns, the wire width and the pitch width of the upper coils 21 can be set to larger values ​​than the corresponding values ​​of the lower coils 20.

[0296] Fig.28 is a sectional view for describing an electronic component 151 according to a fifth preferred embodiment of the present invention. In this embodiment, structures corresponding to those of the electronic component 101 are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0297] The electronic component 151 has a second insulating layer 152 covering a region above the insulating layer laminate structure 27 as a first insulating layer. The second insulating layer 152 covers the protective film 75, the passivation film 76, the resin films 77, etc.

[0298] As mentioned above, the insulating layer laminate structure 27 includes the etching stop films 29 and the interlayer insulating films 30. The etching stop films 29 include, for example, a SiN film, a SiC film, a SiCN film, etc. The interlayer insulating films 30 include, for example, a SiO2 film.

[0299] The insulating layer laminate structure 27 therefore includes a first dielectric breakdown strength S1 of not less than 5.0 MV / cm. The first dielectric breakdown strength S1 of the insulating layer laminate structure 27 is preferably not less than 8.0 MV / cm and not greater than 15 MV / cm.

[0300] The insulating layer laminate structure 27 may include an insulating film formed of an insulating material other than SiN, SiC, SiCN, and SiO2, as long as the first dielectric breakdown strength S1 is not less than 5.0 MV / cm. An insulator (SiO2 or SiN, etc.) having the first dielectric breakdown strength S1 of not less than 8.0 MV / cm and not more than 10 MV / cm may be selected for the insulating layer laminate structure 27.

[0301] The second insulating layer 152 has a second dielectric strength S2 of not more than the first dielectric strength S1 (S2 ≤ S1). Specifically, the second dielectric strength S2 is smaller than the first dielectric strength S1 (S2 < S1).

[0302] The second dielectric breakdown strength S2 of the second insulating layer 152 is preferably not less than 0.1 MV / cm and not greater than 0.5 MV / cm. A resin (epoxy resin or polyimide resin, etc.) having the second dielectric breakdown strength S2 of not less than 0.1 MV / cm and not greater than 0.3 MV / cm can be selected as the second insulating layer 152.

[0303] In this embodiment, the second insulating layer 152 is formed by a resin layer. The resin layer may include at least one resin selected from the group consisting of an epoxy resin, a polyimide resin, and a polybenzoxazole resin. The resin layer may be formed from a molded resin comprising at least one of an epoxy resin, a polyimide resin, and a polybenzoxazole resin.

[0304] When the second insulating layer 152 comprises a molded resin, the second insulating layer 152 may be formed by a portion of the resin case 2 (see Fig. 1) of the electronic component module 1. That is, the electronic component 151, in a state when arranged in an interior of the resin case 2, may include a portion of the resin case 2 covering the region above the insulating layer laminate structure 27.

[0305] Although there is a difference depending on whether the resin films 77 are present or not, such a configuration is practically the same as a configuration in which the electronic component 101 according to the second preferred embodiment, or the electronic component 131 according to the third preferred embodiment, or the electronic component 141 according to the fourth preferred embodiment is arranged in the interior of the resin case 2.

[0306] The upper coils 21A and 21B form an electric field with the low-voltage layer wirings 53, which has a first value R1 that is not greater than the first dielectric strength S1 (R1 ≤ S1). Specifically, the first value R1 is smaller than the first dielectric strength S1 (R1 < S1).

[0307] The first withstand voltage enhancement structure 103 forms an electric field with the low-voltage layer wirings 53, which has a second value R2 that is not less than the first value R1 and not greater than the first dielectric strength S1 (R1 ≤ R2 ≤ S1). Specifically, the second value R2 exceeds the first value R1 and is less than the first dielectric strength S1 (R1 < R2 < S1).

[0308] The first withstand voltage improvement structure 103 increases or strengthens the electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53 by shortening the distance, while weakening the concentration of the electric field at the upper coils 21A and 21B.

[0309] The second withstand voltage enhancement structure 104 forms an electric field with the first withstand voltage enhancement structure 103, which has a third value R3 that is not less than the second value R2 and not greater than the first dielectric strength S1 (R2 ≤ R3 ≤ S1). Specifically, the third value R3 exceeds the second value R2 and is less than the first dielectric strength S1 (R2 < R3 < S1).

[0310] The second withstand voltage improvement structure 104 increases or strengthens the electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53 by shortening the distance while weakening the concentration of the electric field at the low-voltage layer wirings 53.

[0311] The high-voltage pads 14 form an electric field with the low-voltage pads 13, which has a fourth value R4 that is not greater than the second dielectric strength S2 (R4 ≤ S2). In particular, the fourth value R4 is smaller than the second dielectric strength S2 (R4 < S2).

[0312] The electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53 is practically determined by a distance between the first withstand voltage improvement structure 103 and the second withstand voltage improvement structure 104. Similarly, the electric field between the upper coils 21A and 21B and the shield layer 69 is practically determined by a distance between the first withstand voltage improvement structure 103 and the shield layer 69.

[0313] The first withstand voltage enhancement structure 103 therefore functions as a first electric field enhancement structure that increases the electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53, and the electric field between the upper coils 21A and 21B and the shielding layer 69. Furthermore, the second withstand voltage enhancement structure 104 functions as a second electric field enhancement structure that increases the electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53.

[0314] Specifically, the first proximal region 112 of the first withstand voltage enhancement structure 103 forms a first coil-side electric field enhancement structure that enhances the electric field between the first upper coil 21A and the low-voltage layer wirings 53. Furthermore, the first proximal region 112 of the first withstand voltage enhancement structure 103 forms the first coil-side electric field enhancement structure that enhances the electric field between the first upper coil 21A and the shield layer 69.

[0315] The second proximal region 113 of the first withstand voltage enhancement structure 103 forms a second coil-side electric field enhancement structure that enhances the electric field between the second upper coil 21B and the low-voltage layer wirings 53. Furthermore, the second proximal region 113 of the first withstand voltage enhancement structure 103 forms the second coil-side electric field enhancement structure that enhances the electric field between the second upper coil 21B and the shield layer 69.

[0316] The first connection region 114 of the first withstand voltage enhancement structure 103 forms a first pad-side electric field enhancement structure that enhances the electric field between the second pads 34 and the low-voltage layer wirings 53. Furthermore, the first connection region 114 of the first withstand voltage enhancement structure 103 forms the first pad-side electric field enhancement structure that enhances the electric field between the second pads 34 and the shielding layer 69.

[0317] The connection region 115 of the first withstand voltage enhancement structure 103 forms the second pad-side electric field enhancement structure, which enhances the electric field between the second pads 34 and the shielding layer 69.

[0318] Fig. 29 is a diagram for describing an action of the electronic component 151 used in Fig. 28 is shown. Fig.30 is a diagram for describing the action of the electronic component 151 used in Fig. 28. For ease of description, a lower coil 20, an upper coil 21, the withstand voltage improvement structure 102 and other structures are shown in the Fig. 29 and Fig. 30 shown simplified.

[0319] With the electronic component 151 according to the present preferred embodiment, the upper coils 21A and 21B and the lower coils 20 are formed inside the insulating layer laminate structure 27 having the first dielectric breakdown strength S1.

[0320] With reference to Fig.29, as described in the second preferred embodiment, when the withstand voltage improvement structure 102 is not formed, an electric field is concentrated at the upper coil ends. Specifically, when a plan view area of ​​the upper coils 21A and 21B is not larger than a plan view area of ​​the lower coils 20, the electric field wraps around and over a boundary region between the insulating layer laminate structure 27 and the second insulating layer 152 toward an upper side of the upper coil end, and thus the electric field tends to concentrate at the upper coil end.

[0321] When the electric field strength at the upper coil end exceeds the second dielectric breakdown strength S2 of the second insulating layer 152, there is a possibility that dielectric breakdown occurs at the second insulating layer 152.

[0322] On the other hand, if, with reference to Fig. 30, the first withstand voltage improving structure 103 (withstand voltage improving structure 102) is formed, the concentration of the electric field at the coil upper end, etc., is alleviated as described with reference to the second preferred embodiment.

[0323] The first withstand voltage improvement structure 103 protrudes outward from the outer contours of the upper coils 21A and 21B and can therefore shield the electric field formed between the lower coils 20 and the upper coils 21A and 21B. This suppresses the electric field from extending beyond the boundary region between the insulating layer laminate structure 27 and the second insulating layer 152.

[0324] Furthermore, the second withstand voltage enhancement structure 104 (withstand voltage enhancement structure 102) protrudes from the outer contours of the low-voltage pads 13 toward the side of the upper coils 21A and 21B. Therefore, the electric field between the upper coils 21A and 21B and the low-voltage layer wirings 53 is practically determined by the distance between the first withstand voltage enhancement structure 103 and the second withstand voltage enhancement structure 104.

[0325] Therefore, while the electric field strength increases in the insulating layer laminate structure 27 having the first dielectric breakdown strength S1 of not less than the second dielectric breakdown strength S2 (S1 ≥ S2), the electric field strength decreases in the second insulating layer 152 having the second dielectric breakdown strength S2 of not more than the first dielectric breakdown strength S1 (S2 ≤ S1).

[0326] With the electronic component 151, the electric field strength on the side of the second insulating layer 152, which is low in dielectric breakdown strength, is decreased by intentionally increasing the electric field strength on the side of the insulating layer laminate structure 27, which has a high dielectric breakdown strength. Consequently, dielectric breakdown of the second insulating layer 152 due to the concentration of the electric field can be suppressed. Consequently, the electronic component 151 that enables improvement in withstand voltage can be provided.

[0327] Fig. 31 is a diagram for describing the layer structure of an electronic component 161 according to a sixth preferred embodiment of the present invention. Fig. 32 is a diagram for describing the plane structures of low-voltage side capacitor conductor films 162 of the Fig.Electronic component 161 shown in Figure 31.

[0328] Fig. 33 is a diagram for describing the plane structures of high-voltage side capacitor conductor films 163 of the Fig. Electronic component 161 shown in Figure 31. Fig. 34 is a sectional view taken along a line XXXIV-XXXIV shown in Fig. 31. Hereinafter, structures corresponding to the structures of the electronic component 101 are denoted by the same reference numerals, and a description thereof will be omitted.

[0329] With reference to the Fig. 31 to 34, in the electronic component 161, the lower coils 20 and the upper coils 21, the wirings 37 for inner coil ends and the wiring 96 for outer coil ends, as well as the wirings 49 for inner coil ends and the wiring 97 for outer coil ends are not formed.

[0330] In the electronic component 161, the low-voltage-side capacitor conductor films 162 are formed instead of the lower coils 20, the inner coil-end wiring 49, and the outer coil-end wiring 97. Furthermore, the high-voltage-side capacitor conductor films 163 are formed instead of the upper coils 21, the inner coil-end wiring 37, and the outer coil-end wiring 96.

[0331] The low-voltage-side capacitor conductor films 162 are formed as examples of low-voltage conductor patterns 20. The high-voltage-side capacitor conductor films 163 are formed as examples of high-voltage conductor patterns 21. The low-voltage-side capacitor conductor films 162 and the high-voltage-side capacitor conductor films 163 are formed by simply changing mask patterns for forming the lower coils 20 and the upper coils 21.

[0332] In this embodiment, two low-voltage-side capacitor conductor films 162 are formed at a distance along the first direction A. Further, two high-voltage-side capacitor conductor films 163 are formed at a distance along the first direction A.

[0333] The respective high-voltage-side capacitor conductor films 163 are opposed to the respective low-voltage-side capacitor conductor films 162 via at least one insulating layer 28. A distance L2 in the vertical direction between the high-voltage-side capacitor conductor films 163 and the low-voltage-side capacitor conductor films 162 is preferably not less than 12.0 µm and not greater than 16.8 µm. The distance L2 in the vertical direction is the total thickness L2 of the insulating layers 28 between the high-voltage-side capacitor conductor films 163 and the low-voltage-side capacitor conductor films 162.

[0334] A first capacitance 164 is formed by a low-voltage-side capacitor conductor film 162 and a high-voltage-side capacitor conductor film 163, which are opposite to each other on one side in the first direction A. A second capacitance 165 is formed by the low-voltage-side capacitor conductor film 162 and the high-voltage-side capacitor conductor film 163, which are opposite to each other on the other side in the first direction A.

[0335] The structure on the first capacitor 164 side and the structure on the second capacitor 165 side are essentially the same. Hereinafter, the structure on the first capacitor 164 side will be described as an example, and the same reference numerals as those on the first capacitor 164 side will be used for the structure on the second capacitor 165 side, and a description thereof will be omitted.

[0336] In the first capacitors 164, the low-voltage-side capacitor conductor film 162 and the high-voltage-side capacitor conductor film 163 are each formed into flat plate shapes. In this embodiment, the low-voltage-side capacitor conductor film 162 and the high-voltage-side capacitor conductor film 163 are formed into elliptical shapes in a plan view.

[0337] The plane shapes of the low-voltage-side capacitor conductor film 162 and the high-voltage-side capacitor conductor film 163 are arbitrary and are not limited to elliptical shapes. Thus, the low-voltage-side capacitor conductor film 162 and the high-voltage-side capacitor conductor film 163 can each be formed in circular shapes or polygonal shapes (for example, quadrilateral shapes).

[0338] The low-voltage side capacitor conductor film 162 is electrically connected to the low-voltage pads 13 via the penetration wirings 51 and the lead-out wirings 52. The high-voltage side capacitor conductor film 163 is connected to the high-voltage pads 14 via the vias 38.

[0339] In this embodiment, the low-voltage pads 13 are formed in a region outside the high-voltage side capacitor conductor film 163 in plan view. In this embodiment, the high-voltage pads 14 are formed in a region opposite the high-voltage side capacitor conductor film 163 in plan view.

[0340] As with electronic component 101, electronic component 161 includes a withstand voltage enhancement structure 102 with conductive properties. Each withstand voltage enhancement structure 102 is formed in a region between low-voltage side elements and high-voltage side elements. The low-voltage side elements include, for example, the low-voltage pads 13, the shielding layer 69, etc., which are fixed to the reference potential or the ground potential.

[0341] The high-voltage side elements include, for example, the high-voltage pads 14, the high-voltage side capacitor conductor film 163, etc. The withstand voltage improvement structure 102 suppresses deterioration of the withstand voltage due to an electric field formed in the region between the low-voltage side elements and the high-voltage side elements. The withstand voltage improvement structure 102 includes the first withstand voltage improvement structure 103 on the high-voltage side and the second withstand voltage improvement structure 104 on the low-voltage side.

[0342] In this embodiment, the first withstand voltage improvement structure 103 is formed in a plan view along an outer contour of the low-voltage-side capacitor conductor film 162, in such a way that it protrudes further outward than the outer contour of the low-voltage-side capacitor conductor film 162. The first withstand voltage improvement structure 103 surrounds the high-voltage-side capacitor conductor film 163, in such a way that it delimits the high-voltage-side capacitor conductor film 163 from other regions.

[0343] The first withstand voltage improvement structure 103 is formed so as to be equipotential with the high-voltage side capacitor conductor film 163. In this embodiment, the first withstand voltage improvement structure 103 includes a single first dummy conductor pattern 108 having a ring shape (elliptical ring shape) in plan view.

[0344] The first dummy conductor pattern 108 forms a shielding layer. In this embodiment, the first dummy conductor pattern 108 is formed integrally with an outer peripheral edge of the high-voltage-side capacitor conductor film 163.

[0345] Except for the point or difference that the first dummy conductor pattern 108 is formed of a single pattern, the arrangement of the first withstand voltage improvement structure 103 (first dummy conductor pattern 108) is the same as that of the first withstand voltage improvement structure 103 (first dummy conductor pattern 108) according to the electronic component 101. A detailed description of the first withstand voltage improvement structure 103 (first dummy conductor pattern 108) is omitted.

[0346] The second withstand voltage enhancement structure 104 is formed in a region between the high-voltage side capacitor conductor film 163 and the low-voltage layer wirings 53 (low-voltage pads 13), in plan view. The second withstand voltage enhancement structure 104 extends in a line shape along the first direction A.

[0347] The second withstand voltage enhancement structure 104 is formed along the plurality of low-voltage layered wirings 53 (low-voltage pads 13) in plan view. The second withstand voltage enhancement structure 104 extends in a line shape along the first direction A such that it runs along the plurality of low-voltage pads 13. Therefore, the second withstand voltage enhancement structure 104 delimits the plurality of low-voltage pads 13 (low-voltage layered wirings 53) from the high-voltage-side capacitor conductor films 163, respectively.

[0348] In this embodiment, the second withstand voltage enhancement structure 104 includes a single second dummy conductor pattern 121. The second dummy conductor pattern 121 forms a shielding layer. As with the electronic component 101, the second withstand voltage enhancement structure 104 may include the group of second dummy conductor patterns 122, or second dummy conductor pattern group 122, formed by arranging a plurality of second dummy conductor patterns 121.

[0349] The arrangement of the second withstand voltage improvement structure 104 (second dummy conductor pattern 121) is the same as that of the second withstand voltage improvement structure 104 (second dummy conductor pattern 121) according to the electronic component 101. A detailed description of the second withstand voltage improvement structure 104 (second dummy conductor pattern 121) is omitted.

[0350] Even if the low-voltage side capacitor conductor films 162 and the high-voltage side capacitor conductor films 163 are included as in the above-described electronic component 161, the same effects as those described for the electronic component 101 can be exhibited.

[0351] As with the electronic component 101, the electronic component 161 may include the second insulating layer 152 covering the region above the insulating layer laminate structure 27 (see also Fig. 28). In this case, the same effects can be demonstrated as those described by reference to the Fig. 29 and Fig. 30 have been described.

[0352] As with the electronic component 6 and the electronic component 131, the electronic component 161 may include the resin films 77 (see also Fig.3, etc.). Each resin film 77 may overlap with the corresponding first withstand voltage improvement structure 103 in plan view. The resin film 77 may cover the entire first withstand voltage improvement structure 103.

[0353] The high-voltage-side capacitor conductor film 163 and the first withstand voltage improvement structure 103 may be disposed within the region surrounded, in plan view, by the outer peripheral edge of the resin film 77. The resin film 77 may cover the front surface of a portion of the insulating layer laminate structure 27. The resin film 77 may cover the entire front surface of the insulating layer laminate structure 27. In this case, the same effects as those described with respect to the electronic component 6 and the electronic component 131 can be exhibited.

[0354] Fig.35 is a sectional view for describing an electronic component 171 according to a seventh preferred embodiment of the present invention. Hereinafter, structures corresponding to those of the electronic component 161 are denoted by the same reference numerals, and descriptions thereof will be omitted.

[0355] In the electronic component 171, the first withstand voltage improvement structure 103 is formed at a distance from the high-voltage-side capacitor conductor film 163. The first withstand voltage improvement structure 103 is formed so as to be equipotential with the high-voltage-side capacitor conductor film 163.

[0356] The first withstand voltage enhancement structure 103 may be connected to the high-voltage-side capacitor conductor film 163 via interconnect wiring (not shown). The interconnect wiring may be in the same layer as the first withstand voltage enhancement structure 103 and the high-voltage-side capacitor conductor film 163. The interconnect wiring may be formed in a layer different from that of the first withstand voltage enhancement structure 103 and the high-voltage-side capacitor conductor film 163.

[0357] The first withstand voltage enhancement structure 103 includes the first dummy conductor pattern 108 formed at a distance from the high-voltage-side capacitor conductor film 163. As with the electronic component 101, the first withstand voltage enhancement structure 103 may include the group 109 of first dummy conductor patterns or dummy conductor pattern group 109 formed by arranging a plurality of first dummy conductor patterns 108.

[0358] The arrangement of the first withstand voltage improvement structure 103 (first dummy conductor pattern group 109) is the same as that of the first withstand voltage improvement structure 103 (first dummy conductor pattern group 109) according to the electronic component 101. A detailed description of the first withstand voltage improvement structure 103 (first dummy conductor pattern group 109) is omitted.

[0359] Even if the low-voltage side capacitor conductor films 162 and the high-voltage side capacitor conductor films 163 are included as in the electronic component 171 described above, the same effects as the effects described for the electronic component 101 can be exhibited.

[0360] As with the electronic component 151, the electronic component 171 may include the second insulating layer 152 covering the region above the insulating layer laminate structure 27 (see also Fig. 28). In this case, the same effects can be demonstrated as those which were found by reference to the Fig. 29 and Fig. 30 have been described.

[0361] As with the electronic component 6 and the electronic component 131, the electronic component 171 may include the resin films 77 (see also Fig.3, etc.). The resin films 77 may overlap with the corresponding first withstand voltage improvement structure 103 in plan view. The resin film 77 may cover the entire first withstand voltage improvement structure 103.

[0362] The high-voltage-side capacitor conductor film 163 and the first withstand voltage improvement structure 103 may be arranged within the region surrounded by the outer peripheral edge of the resin film 77 in plan view. The resin film 77 may cover the front surface of a portion of the insulating layer laminate structure 27. The resin film 77 may cover the entire front surface of the insulating layer laminate structure 27. In this case, the same effects as those described with respect to the electronic component 6 and the electronic component 131 can be exhibited.

[0363] Although preferred embodiments of the present invention have been described above, various design changes may be applied within the scope of the present invention, within the scope of protection described in the claims.

[0364] With the first present embodiment, the resin films 77 cover entire peripheries of both second pads 34 of the high-voltage pads 14. As shown in Fig. 36, however, the resin films 77 may selectively cover only sides of the second pads 34 toward the first region 39 where the low-voltage pads 13 are arranged.

[0365] In this case, the resin films 77 are preferably formed to cover the upper coils 21 at peripheries of the first pads 33 as a whole in plan view.

[0366] For example, if the resin package 2 contains a filler that seals the electronic component 6, the upper coils 21 may suffer damage ("filler attack") due to the filler during sealing unless the upper coils 21 are covered by the resin films 77. However, if the upper coils 21 are entirely covered by the resin films 77, the problem of filler attack, etc., can be suppressed. The present structure is also applicable to the second to seventh preferred embodiments.

[0367] In the first preferred embodiment, the resin films 77 are formed to overlap the peripheral edges of the second pads 34. As shown in Fig. 37, however, the resin films 77 do not need to overlap with the peripheral edges of the second pads 34.

[0368] In this case, the resin films 77 may have openings 60 having a larger diameter than the pad openings 79 to expose the second pad 34. The present structure is also applicable to the second to seventh preferred embodiments.

[0369] In the first to fifth preferred embodiments, a thickness of the lower coils 20 is preferably not smaller than a thickness of the upper coils 21. However, the thickness of the lower coils 20 may also be not larger than the thickness of the upper coils 21.

[0370] In the first to fifth preferred embodiments, the lower coils 20 may include at least one substance selected from gold, silver, copper, aluminum, titanium, titanium nitride, and tungsten. The upper coils 21 may include at least one substance selected from gold, silver, copper, aluminum, titanium, titanium nitride, and tungsten. From a cost and mass producibility perspective, it is preferable for the lower coils 20 and the upper coils 21 to include copper or aluminum.

[0371] In the first to fifth preferred embodiments, a width of the spiral patterns of the lower coils 20 is preferably not larger than the width of the spiral patterns 105 of the upper coils 21A and 21B. It should be understood that the width of the spiral patterns of the lower coils 20 may not be smaller than the width of the spiral patterns 105 of the upper coils 21A and 21B.

[0372] In the second to fifth preferred embodiments, the first withstand voltage improving structure 103 on the first transformer 301 side and the first withstand voltage improving structure 103 on the second transformer 302 side may be formed integrally with each other.

[0373] In this case, the upper coils 21A and 21B and the outer coil end wiring 96 on the first transformer 301 side and the upper coils 21A and 21B and the outer coil end wiring 96 on the second transformer 302 side may be surrounded by the first withstand voltage improvement structure 103 as a whole.

[0374] In the second to fifth preferred embodiments, the second withstand voltage improving structure 104 on the first transformer 301 side and the second withstand voltage improving structure 104 on the second transformer 302 side may be integrally formed.

[0375] In this case, the second withstand voltage improvement structure 104 may be formed to extend continuously along the low-voltage pads 13 (low-voltage wirings 53) on the first transformer 301 side and along the low-voltage pads 13 (low-voltage wirings 53) on the second transformer 302 side.

[0376] In the second to fifth preferred embodiments, the first proximal regions 112, the second proximal regions 113, the first connection regions 114, and the second connection regions 115 may each be formed as separate elements. The first proximal regions 112, the second proximal regions 113, the first connection regions 114, and the second connection regions 115 may each include first dummy conductor pattern groups 109 that are mutually independent of each other.

[0377] In the second to fifth preferred embodiments, the withstand voltage improvement structures 102 may be formed in a layer different from that of the upper coils 21A and 21B.

[0378] In the second to fifth preferred embodiments, the first withstand voltage improvement structures 103 and the second withstand voltage improvement structures 104 may be formed in different layers, respectively.

[0379] For example, the second withstand voltage improvement structures 104 may be formed in a layer lower than the upper coils 21A and 21B, whereas the first withstand voltage improvement structures 103 may be formed in a layer higher than the upper coils 21A and 21B.

[0380] In contrast, the second withstand voltage improvement structures 104 may be formed in a layer higher than the upper coils 21A and 21B, whereas the first withstand voltage improvement structures 103 may be formed in a layer lower than the upper coils 21A and 21B.

[0381] In the second to fifth preferred embodiments, each first withstand voltage improvement structure 103 may include a single wide shield layer instead of the plurality of first dummy conductor patterns 108. The shield layer may have a protrusion amount of Z1. Even with such a structure, the same effects as those described in relation to the respective preferred embodiments can be exhibited.

[0382] In the second to fifth preferred embodiments, the plurality of first dummy conductor patterns 108 may be formed in different or mutually different layers. For example, any three of the first dummy conductor patterns 108 may be formed in the same layer as the upper coils 21A and 21B, and the other three first dummy conductor patterns 108 may be formed in a layer directly below them.

[0383] Furthermore, for example, any two of the first dummy conductor patterns 108 may be formed in the same layer as the upper coils 21A and 21B, two further first dummy conductor patterns 108 may be formed in a layer directly below the upper coils 21A and 21B, and two further first dummy conductor patterns 108 may be formed in a layer directly above the upper coils 21A and 21B.

[0384] In the second to fifth preferred embodiments, each second withstand voltage improvement structure 104 may include a single wide shield layer instead of the plurality of second dummy conductor patterns 121. The shield layer may have the protrusion amount Z2. Even with such a structure, the same effects as those described with respect to the respective preferred embodiments can be exhibited.

[0385] In the second to fifth preferred embodiments, the plurality of second dummy conductor patterns 121 may be formed in mutually different layers. For example, any one of the second dummy conductor patterns 121 may be formed in the same layer as the upper coils 21A and 21B, and the other two second dummy conductor patterns 121 may be formed in a layer directly below them.

[0386] Further, for example, any one of the second dummy conductor patterns 121 may be formed in the same layer as the upper coils 21A and 21B, another second dummy conductor pattern 121 may be formed in a layer directly below the upper coils 21A and 21B, and yet another dummy conductor pattern 121 may be formed in a layer directly above the upper coils 21A and 21B.

[0387] In the second to fifth preferred embodiments, each second dummy conductor pattern group 122 may include a second dummy conductor pattern 121 extending along the second direction B to an opposite side from the upper coils 21A and 21B.

[0388] In the sixth and seventh preferred embodiments, a thickness of the low-voltage-side capacitor conductor films 162 may not be less than a thickness of the high-voltage-side capacitor conductor films 163. The thickness of the low-voltage-side capacitor conductor films 162 may not be greater than the thickness of the high-voltage-side capacitor conductor films 163.

[0389] In the sixth and seventh preferred embodiments, the low-voltage side capacitor conductor films 162 may comprise at least one of gold, silver, copper, aluminum, titanium, titanium nitride, and tungsten.

[0390] The high-voltage-side capacitor conductor films 163 may include at least one of gold, silver, copper, aluminum, titanium, titanium nitride, and tungsten. From a cost and mass-producibility perspective, the low-voltage-side capacitor conductor films 162 and the high-voltage-side capacitor conductor films 163 preferably include copper or aluminum.

[0391] In the sixth and seventh preferred embodiments, the first withstand voltage improving structure 103 on the first capacitor 164 side and the first withstand voltage improving structure 103 on the second capacitor 165 side may be integrally formed.

[0392] In this case, the high-voltage side capacitor conductor film 163 on the first capacitance 164 side and the high-voltage side capacitor conductor film 163 on the second capacitance 165 side may be surrounded together by the first withstand voltage improvement structure 103.

[0393] In the sixth and seventh preferred embodiments, the second withstand voltage improving structure 104 on the first capacitor 164 side and the second withstand voltage improving structure 104 on the second capacitor 165 side may be integrally formed.

[0394] In this case, the second withstand voltage improvement structure 104 may be formed to extend continuously along the low-voltage pads 13 (low-voltage wirings 53) on the first capacitor 164 side and along the low-voltage pads 13 (low-voltage wirings 53) on the second capacitor 165 side.

[0395] In the sixth and seventh preferred embodiments, the withstand voltage improvement structures 102 may be formed in a layer different from that of the high-voltage side capacitor conductor films 163.

[0396] In the sixth and seventh preferred embodiments, the first withstand voltage improvement structures 103 and the second withstand voltage improvement structures 104 may be formed in different layers, respectively. For example, the second withstand voltage improvement structures 104 may be formed in a layer lower than the high-voltage-side capacitor conductor films 163, whereas the first withstand voltage improvement structures 103 may be formed in a layer higher than the high-voltage-side capacitor conductor films 163.

[0397] In contrast, the second withstand voltage improvement structures 104 may be formed in a layer higher than the high-voltage-side capacitor conductor films 163, whereas the first withstand voltage improvement structures 103 may be formed in a layer lower than the high-voltage-side capacitor conductor films 163.

[0398] In the seventh preferred embodiment, when a plurality (for example, six) of first dummy conductor patterns 108 are formed, the plurality of first dummy conductor patterns 108 may be formed in mutually different layers.

[0399] For example, any three of the first dummy conductor patterns 108 may be formed in the same layer as the high-voltage-side capacitor conductor films 163, and the other three first dummy conductor patterns 108 may be formed in a layer directly below them.

[0400] Furthermore, for example, any two of the first dummy conductor patterns 108 may be formed in the same layer as the high-voltage-side capacitor conductor films 163, two further first dummy conductor patterns 108 may be formed in a layer directly below the high-voltage-side capacitor conductor films 163, and yet another two first dummy conductor patterns 108 may be formed in a layer formed directly above or one above the high-voltage-side capacitor conductor films 163.

[0401] In the sixth and seventh preferred embodiments, when a plurality (for example, three) of second dummy conductor patterns 121 are formed, the plurality of second dummy conductor patterns 121 may be formed in mutually different layers.

[0402] For example, any one of the second dummy conductor patterns 121 may be formed in the same layer as the high-voltage side capacitor conductor films 163, and the other two second dummy conductor patterns 121 may be formed in a layer thereunder.

[0403] Further, for example, any one of the second dummy conductor patterns 121 may be formed in the same layer as the high-voltage-side capacitor conductor films 163, another second dummy conductor pattern 121 may be formed in a layer that is one below the high-voltage-side capacitor conductor films 163, and yet another dummy conductor pattern 121 may be formed in a layer that is one above the high-voltage-side capacitor conductor films 163.

[0404] In the sixth and seventh preferred embodiments, each second dummy conductor pattern group 122 may include a second dummy conductor pattern 121 extending along the second direction B to an opposite side from the high-voltage side capacitor conductor films 163.

[0405] In the second to seventh preferred embodiments, the second dummy conductor pattern group 122 may be formed to surround one or a plurality of the low-voltage pads 13 in plan view. In this case, the second dummy conductor pattern 121 included in the second dummy conductor pattern group 122 may be formed in shapes with ends having open portions 110, like the first dummy conductor patterns 108.

[0406] Fig.38 is a plan view of an electronic component module 201 according to a modification example. In the present modification example, structures corresponding to structures of the electronic component module 1 are denoted by the same reference numerals, and descriptions thereof are omitted.

[0407] In the electronic component module 1 according to the first preferred embodiment, the controller chip 5, the electronic component 6 and the driver chip 7 are each formed as separate chips.

[0408] On the other hand, in the electronic component module 201 according to the present modification example, portions of functions of an electronic component 101 are incorporated in the controller chip 5 and the driver chip 7, respectively.

[0409] More specifically, a first transformer 301 of the electronic component 101 is housed in the controller chip 5, and a second transformer 302 of the electronic component 101 is housed in the driver chip 7. The controller chip 5 and the driver chip 7 are thus each also formed as electronic components.

[0410] Three high-voltage pads 14 belonging to the first transformer 301 of the controller chip 5 are each connected via high-voltage wires 303 to three high-voltage pads 304 provided on the driver chip 7. The first transformer 301 of the controller chip 5 is also electrically connected to any low-voltage terminal 3 (any low-voltage pad 10) used as a ground terminal.

[0411] Three high-voltage pads 14 belonging to the second transformer 302 of the driver chip 7 are each connected via high-voltage wires 305 to three high-voltage pads 306 provided on the controller chip 5. The second transformer 302 of the driver chip 7 is also electrically connected to any low-voltage terminal 3 (any low-voltage pad 17) used as the ground terminal.

[0412] When the first transformer 301 of the electronic component 101 is incorporated in the controller chip 5, the first transformer 301 is incorporated using a wiring material of the controller chip 5. Therefore, the lower coils 20, the upper coils 21, wiring elements connecting the lower coils 20 and the upper coils 21, etc. included in the first transformer 301 are the same in material as the wiring material of the controller chip 5.

[0413] For example, if the wiring material of the controller chip 5 is copper, the lower coils 20, the upper coils 21, the wiring elements connecting the lower coils 20 and the upper coils 21, etc., are formed of copper. If the wiring material of the electronic component 101 includes copper and aluminum, the lower coils 20, the upper coils 21, the wiring elements connecting the lower coils 20 and the upper coils 21, etc., are formed of copper and / or aluminum.

[0414] The upper coils 21 may be formed of copper, whereas the lower coils 20 may be formed of aluminum. The upper coils 21 may be formed of aluminum, whereas the lower coils 20 may be formed of copper.

[0415] When the second transformer 302 of the electronic component 101 is incorporated in the driver chip 7, the second transformer 302 is incorporated using a wiring material of the driver chip 7. Therefore, the lower coils 20, the upper coils 21, the wiring elements connecting the lower coils 20 and the upper coils 21, etc., included in the second transformer 302, are made of the same material as the wiring material of the driver chip 7.

[0416] For example, if the wiring material of the driver chip 7 is copper, the lower coils 20, the upper coils 21, the wiring elements connecting the lower coils 20 and the upper coils 21, etc., are formed of copper. If the wiring material of the electronic component 101 includes copper and aluminum, the lower coils 20, the upper coils 21, the wiring elements connecting the lower coils 20 and the upper coils 21, etc., are formed of copper and / or aluminum.

[0417] The upper coils 21 may be made of copper, whereas the lower coils 20 are made of aluminum. The upper coils 21 may be made of aluminum, whereas the lower coils 20 are made of copper.

[0418] The present modification example is an example in which the first transformer 301 according to the first preferred embodiment is incorporated in the controller chip 5. However, the first transformer 301 including the withstand voltage improvement structure 102 according to the second to fourth preferred embodiments may be incorporated in the controller chip 5 instead.

[0419] When the first transformer 301 including the withstand voltage improvement structure 102 according to the third preferred embodiment is incorporated in the controller chip 5, substantially an entire device formation area in which the controller IC is constructed can be covered by the resin film 77 in the controller chip 5.

[0420] The present modification example is an example in which the second transformer 302 according to the first preferred embodiment is incorporated in the driver chip 7. However, the first transformer 301 including the withstand voltage improvement structure 102 according to the second to fourth preferred embodiments may be incorporated in the driver chip 7 instead.

[0421] When the second transformer 302 having the withstand voltage improvement structure 102 according to the third preferred embodiment is included in the driver chip 7, substantially an entire device formation area in which the driver IC is constructed can be covered by the resin film 77 in the driver chip 7.

[0422] Examples of features that can be extracted from the present description and drawing are given below.

[0423] [Item 1] An electronic component comprising an insulating layer 28, a low-voltage coil formed within the insulating layer 28, a high-voltage coil formed within the insulating layer 28 so as to oppose the low-voltage coil in an up-down direction, high-voltage pads 14 including a first pad disposed so as to oppose a formation region of the high-voltage coil in a thickness direction of the insulating layer 28 and a second pad disposed so as to avoid the formation region of the high-voltage coil in the thickness direction and electrically connected to the high-voltage coil on the insulating layer 28, a low-voltage pad 13 disposed on the insulating layer 28 and connected to the low-voltage coil, and a resin film selectively formed on the insulating layer 28 to cover a periphery of the first pad and a periphery of the second pad.

[0424] According to this arrangement, a withstand voltage between the high-voltage pads 14 and the low-voltage pad 13 can be improved because the peripheries of both the first pad and the second pad of the high-voltage pads 14 are covered by the resin film.

[0425] [Item 2] The electronic component according to Item 1, wherein a first space and a second space with the high-voltage pads 14 therebetween are formed on the insulating layer 28, the low-voltage pad 13 is selectively formed in the first space, and the resin film covers at least a periphery of the second pad on the first space side and the first pad.

[0426] [Item 3] The electronic component according to Item 2, wherein the resin film covers a periphery of the second pad on the second space side and the first pad.

[0427] [Item 4] The electronic component according to Item 3, wherein the resin film covers the periphery of the first pad and the periphery of the second pad over the entire peripheries.

[0428] [Item 5] The electronic component according to any one of Items 1 to 4, wherein the resin film covers the periphery of the first pad and the periphery of the second pad in an integral manner.

[0429] [Item 6] The electronic component according to any one of Items 1 to 5, comprising a high-voltage conductive layer formed on the insulating layer 28, a low-voltage conductive layer formed on the insulating layer 28 at a distance from the high-voltage conductive layer, a front-surface insulating film formed on the insulating layer 28 to cover the high-voltage conductive layer and the low-voltage conductive layer in an integral manner, and having high-voltage side pad openings exposing portions of the high-voltage conductive layer as the high-voltage pads 14, and a low-voltage side pad opening exposing a portion of the low-voltage conductive layer as the low-voltage pad 13, and wherein the resin film is formed on the front-surface insulating film.

[0430] [Item 7] The electronic component according to Item 6, wherein the resin film overlaps with the high-voltage conductive layer at a periphery of the high-voltage side pad openings to define the first pad, and overlaps with the high-voltage conductive layer at a periphery of the high-voltage side pad openings to define the second pad.

[0431] [Item 8] The electronic component according to any one of Items 1 to 7, wherein the high-voltage coil formation region includes an inner coil region surrounded by the high-voltage coil, the first pad facing the inner coil region in the thickness direction, and the second pad facing an outer coil region outside the high-voltage coil in the thickness direction.

[0432] [Item 9] The electronic component according to any one of items 1 to 8, wherein the resin film comprises a polyimide.

[0433] [Item 10] The electronic component according to any one of items 1 to 9, wherein the resin film has a thickness of not less than 3000 nm and not more than 5000 nm.

[0434] [Item 11] The electronic component according to any one of items 1 to 10, wherein a distance L1 in the lateral direction between the high-voltage pad 14 and the low-voltage pad 13 is greater than a distance L2 in the vertical direction between the high-voltage coil and the low-voltage coil.

[0435] [Item 12] The electronic component according to item 11, wherein the distance L1 in the lateral direction is not less than 100 µm and not more than 450 µm, and wherein the distance L2 in the vertical direction is not less than 12.0 µm and not more than 16.8 µm.

[0436] [Item 13] The electronic component according to any one of Items 1 to 12, further comprising a withstand voltage improvement structure 102 having a conductive property formed inside the insulating layer 28 and along the high-voltage coil so as to protrude further outward in plan view than the low-voltage coil.

[0437] [Item 14] The electronic component according to Item 13, wherein the withstand voltage improvement structure 102 has a dummy pattern extending along the high-voltage coil in a pattern that is discontinuous with respect to a spiral pattern of the high-voltage coil.

[0438] [Item 15] The electronic component according to Item 14, wherein the dummy pattern has a shape with ends.

[0439] [Item 16] The electronic component according to Item 14 or 15, wherein the high-voltage coil has an inner terminal end and an outer terminal end, and wherein the dummy pattern is set to the same potential as the outer terminal end of the high-voltage coil.

[0440] [Item 17] The electronic component according to Item 16, wherein the inner terminal end of the high-voltage coil is positioned in a region at an inner side of the low-voltage coil in plan view, wherein the outer terminal end of the high-voltage coil is positioned in a region outside the low-voltage coil in plan view, and wherein the dummy pattern is led out from the outer terminal end of the high-voltage coil.

[0441] [Item 18] The electronic component according to any one of items 1 to 12, further comprising a pad-side withstand voltage improvement structure 102 having a conductive property formed inside the insulating layer 28 so as to be oriented along a peripheral edge of the second pad of the high-voltage pads 14 in plan view.

[0442] [Item 19] The electronic component according to Item 18, wherein the pad-side withstand voltage improvement structure 118 has a pad-side dummy pattern extending along the peripheral edge of the second pad in a pattern that is discontinuous in plan view with the spiral pattern of the high-voltage coil.

[0443] [Item 20] The electronic component according to Item 19, wherein the pad-side withstand voltage improvement structure 118 includes a plurality of the pad-side dummy patterns formed at intervals along a direction away from the second pad.

[0444] [Item 21] The electronic component according to Item 19, wherein a distance between the pad-side dummy pattern most proximal to the second pad and the second pad is not greater than a distance in the vertical direction between the high-voltage coil and the low-voltage coil.

[0445] [Item 22] The electronic component according to any one of items 18 to 21, further comprising a coil-side withstand voltage improvement structure 102 having a conductive property formed inside the insulating layer 28 and along the high-voltage coil and extending further outward in plan view than the low-voltage coil.

[0446] [Item 23] The electronic component according to Item 22, wherein the coil-side withstand voltage improvement structure 116 is fixed to the same potential as the pad-side withstand voltage improvement structure 118.

[0447] [Item 24] The electronic component according to any one of Items 1 to 12, comprising a low-voltage wiring formed inside the insulating layer 28 at a distance from the high-voltage coil in a direction along a front surface of the insulating layer 28, which is electrically connected to the low-voltage coil and which forms an electric field with the high-voltage coil having a first value not greater than a dielectric strength of the insulating layer 28, an electric field enhancing structure disposed in a region inside the insulating layer 28 between the high-voltage coil and the low-voltage wiring, and which forms an electric field with the low-voltage wiring having a second value not greater than the dielectric strength of the insulating layer 28 and not less than the first value,and with a second insulating layer 152 formed on the insulating layer 28 such that it covers the high-voltage pads 14 and the low-voltage pad 13 and has a dielectric breakdown strength not greater than the dielectric breakdown strength of the insulating layer 28.

[0448] [Item 25] The electronic component according to Item 24, wherein the electric field enhancement structure has a high-voltage side dummy pattern with conductive property that is fixed to the same potential as the high-voltage coil and that is formed along the high-voltage coil.

[0449] [Item 26] The electronic component according to Item 24 or 25, wherein the electric field enhancement structure includes a low-voltage side dummy pattern having a conductive property that is set to the same potential as the low-voltage wiring and that is formed along the low-voltage wiring.

[0450] [Item 27] ​​The electronic component according to any one of items 24 to 26, wherein the dielectric breakdown strength of the insulating layer 28 is not less than 5.0 MV / cm and wherein the dielectric breakdown strength of the second insulating layer 152 is not less than 1.0 MV / cm.

[0451] [Item 28] The electronic component according to any one of Items 24 to 27, wherein the second insulating layer 152 is formed of a resin layer.

[0452] [Item 29] The electronic component according to Item 28, wherein the resin layer comprises a molded resin.

[0453] [Item 30] An electronic component module comprising the electronic component according to any one of Items 1 to 29 and a resin case that seals the electronic component.

[0454] [Item 31] The electronic component module according to Item 30, further comprising a low-voltage component electrically connected to the low-voltage coil of the electronic component, and a high-voltage component electrically connected to the high-voltage coil of the electronic component, and wherein the resin case seals the electronic component, the low-voltage component, and the high-voltage component together. Description of reference symbols 1 electronic component module 2 resin samples 5 Controller chip 6 Electronic components 7 Driver chip 13 Low voltage pad 14 High voltage pad 20 lower coil (low voltage conductor pattern) 21 upper coil (high-voltage conductor pattern) 27 Insulation layer laminate structure 28 Insulating layer (first insulating layer) 32 inner region (from upper coil) 33 first pad 34 second pad 39 first region 40 second region 44 overlapping section 45 overlapping section 50 Intermediate coil region 75 protective film 76 Passivation film 77 resin film 78 Pad opening 79 Pad opening 88 High-voltage pad layer 89 Low voltage pad layer 99 Coil surrounding region 101 Electronic Components 102 Withstand voltage improvement structure 103 first withstand voltage improvement structure 104 second withstand voltage improvement structure 108 first dummy ladder pattern 116 first coil-side withstand voltage improvement structure 117 second coil-side withstand voltage improvement structure 118 first pad-side withstand voltage improvement structure 119 second pad-side withstand voltage improvement structure 131 Electronic components 141 electronic components 142 first spiral pattern 143 second spiral pattern 151 electronic components 152 second insulation layer 161 electronic components 162 Low-voltage side capacitor conductor film (low-voltage conductor pattern) 163 High-voltage side capacitor conductor film (high-voltage conductor pattern) 164 first capacity 165 second capacity 171 electronic components 201 Electronic component module

Claims

[1] Electronic component with: an insulating layer (28); a low-voltage conductor pattern (20) formed within the insulating layer (28); a high-voltage conductor pattern (21) formed within the insulating layer (28) such that it faces the low-voltage conductor pattern (20) in an up / down direction; and a withstand voltage improvement structure having a conductive property, formed within the insulating layer (28) and along the high-voltage conductor pattern (21) such that it projects further outward in plan view than the low-voltage conductor pattern (20), wherein the low-voltage conductor pattern (20) comprises a low-voltage coil with a spiral shape, wherein the high-voltage conductor pattern (21) comprises a high-voltage coil with a spiral shape, wherein the low-voltage coil and the high-voltage coil form a transformer, wherein the withstand voltage improvement structure comprises a dummy conductor pattern (108) extending along the high-voltage coil in a pattern that is discontinuous with respect to a spiral pattern of the high-voltage coil, wherein the high-voltage coil has an inner terminal end and an outer terminal end, wherein the dummy conductor pattern (108) is set to have the same potential as the outer terminal end of the high-voltage coil, wherein the inner terminal end of the high-voltage coil is positioned in a region at an inner side of the low-voltage coil in plan view, wherein the outer terminal end of the high-voltage coil is positioned in a region outside the low-voltage coil in plan view, and wherein the dummy conductor pattern (108) is led out from the outer terminal end of the high-voltage coil. [2] The electronic component according to claim 1, wherein the dummy conductor pattern (108) has a shape with ends. [3] The electronic component according to claim 1 or 2, wherein the withstand voltage improvement structure comprises a plurality of said dummy conductor patterns (108) formed at intervals along a direction away from the high voltage coil. [4] The electronic component according to any one of claims 1 to 3, wherein the high-voltage coil has a first spiral region wound outward in plan view in a region opposite to the low-voltage coil, and a second spiral region wound continuously outward in plan view from the first spiral region to a region outside the low-voltage coil, and wherein the withstand voltage improvement structure includes the second spiral region of the high-voltage coil. [5] The electronic component of any one of claims 1 to 4, wherein a first number of turns of the high voltage coil is greater than a second number of turns of the low voltage coil. [6] The electronic component according to claim 5, wherein a difference between the first number of turns and the second number of turns is not less than 5. [7] Electronic component with: an insulating layer (28); a low-voltage conductor pattern (20) formed within the insulating layer (28); a high-voltage conductor pattern (21) formed within the insulating layer (28) such that it faces the low-voltage conductor pattern (20) in an up / down direction; and a withstand voltage improvement structure having a conductive property, formed within the insulating layer (28) and along the high-voltage conductor pattern (21) such that it projects further outward in plan view than the low-voltage conductor pattern (20), wherein the low-voltage conductor pattern (20) includes a low-voltage side capacitor conductor film (162) of a flat plate shape, wherein the high-voltage conductor pattern (21) includes a high-voltage side capacitor conductor film (163) of a flat plate shape, wherein a capacitance is formed by the low-voltage side capacitor conductor film (162) and the high-voltage side capacitor conductor film (163), wherein the withstand voltage improvement structure comprises a dummy conductor pattern (108) extending along the high-voltage conductor pattern (21) and being set to the same potential as the high-voltage conductor pattern (21), and wherein the dummy conductor pattern (108) is formed integrally with the high-voltage conductor pattern (21). [8] The electronic component according to claim 7, wherein the dummy conductor pattern (108) is formed at a distance from the high-voltage conductor pattern (21). [9] Electronic component with: an insulating layer (28); a low-voltage conductor pattern (20) formed within the insulating layer (28); a high-voltage conductor pattern (21) formed within the insulating layer (28) so as to oppose the low-voltage conductor pattern (20) in an up / down direction; a low-voltage pad (13) formed on the insulating layer (28) and electrically connected to the low-voltage conductor pattern (20); a high-voltage pad (14) formed in plan view on the insulating layer (28) at a distance from the low-voltage pad (13) and electrically connected to the high-voltage conductor pattern (21); a pad-side withstand voltage improvement structure having a conductive property, formed in plan view within the insulating layer (28) along a peripheral edge of the high-voltage pad (14); and a coil-side withstand voltage improvement structure with conductive property, formed in plan view within the insulating layer (28) and along the high-voltage conductor pattern (21) and projecting further outward than the low-voltage conductor pattern (20), wherein the low-voltage conductor pattern (20) includes a low-voltage coil of a spiral shape, wherein the high-voltage conductor pattern (21) includes a high-voltage coil of a spiral shape, wherein the low-voltage coil and the high-voltage coil form a transformer, wherein the pad-side withstand voltage improvement structure (118) comprises a pad-side dummy conductor pattern (108) extending along a peripheral edge of the high-voltage pad (14) in a pattern that is discontinuous with respect to a spiral pattern of the high-voltage coil, wherein the pad-side withstand voltage improvement structure (118) comprises a plurality of pad-side dummy conductor patterns formed at intervals along a direction away from the high-voltage pad (14), wherein the coil-side withstand voltage improvement structure (116) includes a coil-side dummy conductor pattern routed along the high-voltage coil in a pattern that is discontinuous with respect to the spiral pattern of the high-voltage coil and that is set to the same potential as the pad-side dummy conductor patterns (118), and wherein the coil-side dummy conductor pattern (116) is formed integrally with the pad-side dummy conductor patterns (118). [10] The electronic component according to claim 9, wherein a distance between the pad-side dummy conductor pattern (118) closest to the high-voltage pad (14) and the high-voltage pad (14) is not greater than a vertical direction distance between the high-voltage conductor pattern (21) and the low-voltage conductor pattern (20). [11] The electronic component according to claim 10, wherein the high-voltage coil has an inner terminal end positioned in a region at an inner side of the low-voltage coil in plan view, and an outer terminal end positioned in a region outside the low-voltage coil in plan view, wherein the high-voltage pad (14) is arranged directly above the outer terminal end of the high-voltage coil such that it is electrically connected to the outer terminal end of the high-voltage coil, and wherein the pad-side withstand voltage improvement structure (118) is formed within the insulating layer such that it is oriented along the outer terminal end of the high-voltage coil. [12] Electronic component with: an insulating layer (28); a low-voltage conductor pattern (20) formed within the insulating layer (28); a high-voltage conductor pattern (21) formed within the insulating layer (28) so as to oppose the low-voltage conductor pattern (20) in an up / down direction; a low-voltage pad (13) formed on the insulating layer (28) and electrically connected to the low-voltage conductor pattern (20); a high-voltage pad (14) formed in plan view on the insulating layer (28) at a distance from the low-voltage pad (13) and electrically connected to the high-voltage conductor pattern (21); a pad-side withstand voltage improvement structure having a conductive property, formed in plan view within the insulating layer (28) along a peripheral edge of the high-voltage pad (14); and a capacitance-side withstand voltage improvement structure of conductive property extending within the insulating layer (28) and along the high-voltage conductor pattern (21) so that it projects further outward in plan view than the low-voltage conductor pattern (20) and is fixed to the same potential as the high-voltage conductor pattern (21), wherein the low-voltage conductor pattern (20) comprises a low-voltage side capacitor conductor film (162) of a flat plate shape, wherein the high-voltage conductor pattern (21) comprises a high-voltage-side capacitor conductor film (163) of a flat plate shape, wherein a capacitance is formed by the low-voltage side capacitor conductor film (162) and the high-voltage side capacitor conductor film (163), and wherein the capacitance-side withstand voltage improvement structure comprises a capacitance-side dummy conductor pattern (108) formed integrally with the high-voltage conductor pattern (21). [13] The electronic component according to claim 12, wherein the capacitance-side withstand voltage improvement structure comprises a capacitance-side dummy conductor pattern (108) formed at a distance from the high-voltage conductor pattern (21).

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