IMAGING DEVICE AND SOLID-STATE IMAGE SENSOR

Abstract

Imaging device (11), comprising: a first electrode (21); a charge accumulating electrode (24) arranged at a distance from the first electrode (21), an insulating electrode (30) arranged at a distance from the first electrode (21) and the charge accumulating electrode (24) and surrounding the charge accumulating electrode (24), a photoelectric conversion layer (23) formed in contact with the first electrode (21) and above the charge accumulating electrode (24) with an insulating layer (82) arranged therebetween, and a second electrode (22) formed on the photoelectric conversion layer (23), wherein the insulation electrode (30) comprises a first insulation electrode (31A) and a second insulation electrode (31B) arranged at a distance from the first insulation electrode (31A), and the first insulation electrode (31A) is arranged between the first electrode (21) and the second insulation electrode (31B).

Description

[Technical field]

[0001] The present disclosure relates to an imaging device and a solid-state image sensor including the imaging device. [Background technology]

[0002] An imaging device using an organic semiconductor material for a photoelectric conversion layer can perform photoelectric conversion of a specific color (wavelength band). Furthermore, since the imaging device has such characteristics as just described, when used as an imaging device in a solid-state image sensor, it is possible to obtain a structure (a stacked-type imaging device) in which a subpixel includes a combination of an on-chip color filter (OCCF) and an imaging device, and such subpixels are stacked, which cannot be realized by a conventional solid-state image sensor in which subpixels are arranged two-dimensionally in an array (see, for example, Japanese Patent Laid-Open No. 2017-157816). Furthermore, since no demosaicing process is required, there is an advantage in that false color does not occur.It is particularly noteworthy that in the following description, an imaging device including a photoelectric conversion region provided on or above a semiconductor substrate will sometimes be referred to as a "first-type imaging device" for convenience of description, and the photoelectric conversion region constituting the first-type imaging device will sometimes be referred to as a "first-type photoelectric conversion region" for convenience of description. Furthermore, an imaging device provided in a semiconductor substrate will sometimes be referred to as a "second-type imaging device" for convenience of description, and a photoelectric conversion region constituting the second-type imaging device will sometimes be referred to as a "second-type photoelectric conversion region" for convenience of description.

[0003] An example of a structure of a stacked-type imaging device (stacked-type solid-state image sensor) disclosed in Japanese Patent Application Laid-Open No. JP 2017-157816 is shown in Fig. 57. In the Fig.In the example shown in Fig. 57, a third photoelectric conversion region 43 and a second photoelectric conversion region 41, which are second-type photoelectric conversion regions constituting a third imaging device 15 and a second imaging device 13, which are second-type imaging devices, are formed in a semiconductor substrate 70 in a stacked state. Further, a first photoelectric conversion region 11', which is a first-type photoelectric conversion region, is disposed above the semiconductor substrate 70 (specifically, above the second imaging device 13). Here, the first photoelectric conversion region 11' includes a first electrode 21, a photoelectric conversion layer 23 formed of an organic material, and a second electrode 22, and constitutes a first imaging device 11, which is a first-type imaging device.Further, a charge-accumulating electrode 24 is provided at a distance from the first electrode 21, and a photoelectric conversion layer 23 is positioned above the charge-accumulating electrode 24 with an insulating layer 82 interposed therebetween. In the second photoelectric conversion region 41 and the third photoelectric conversion region 43, blue and red light, for example, are respectively photoelectrically converted depending on the difference in absorption coefficient. Furthermore, in the first photoelectric conversion region 11', green light, for example, is photoelectrically converted.

[0004] A charge generated by photoelectric conversion by the second photoelectric conversion region 41 and the third photoelectric conversion region 43 is once accumulated in the second photoelectric conversion region 41 and the third photoelectric conversion region 43, and is then transferred through a vertical transistor (the gate region 45 of which is shown) and a transfer transistor (the gate region 46 of which is shown) to a second floating diffusion layer FD2 and a third floating diffusion layer FD3, after which it is output to an external readout circuit (not shown). The transistors and the floating diffusion layers FD2 and FD3 are also formed on the semiconductor substrate 70.

[0005] During charge accumulation, charge generated by photoelectric conversion in the first photoelectric conversion region 11' is attracted to the charge accumulating electrode 24 and accumulates in the photoelectric conversion layer 23. During charge transfer, the charge accumulated in the photoelectric conversion layer 23 is accumulated into a first floating diffusion layer FD1 formed on the semiconductor substrate 70 via the first electrode 21, a contact hole region 61, and a wiring layer 62. Furthermore, the first photoelectric conversion region 11' is also connected to a gate region 52 of an amplification transistor for converting an amount of charge into a voltage via the contact hole region 61 and the wiring layer 62. Furthermore, the first floating diffusion layer FD1 forms part of a reset transistor (the gate region 51 of which is shown).It is particularly noted that reference numerals 63, 64, 65, 66, 71, 72, 76, 81, 83, 90 and so on will be described in connection with a working example 1. [Citation list][Patent literature]

[0006] Exemplary imaging devices are known from the documents US 11 222 912 B2 and US 2015 / 0 334 328 A1.

[0007] [PTL 1] Japanese Patent Application Laid-Open No. 2017-157816 [Summary][Technical Problem]

[0008] Incidentally, in such a first imaging device 11 as described above, it cannot be assumed that there is no possibility that a charge accumulated in the photoelectric conversion layer 23 moves to an adjacent first imaging device 11 during operation of the first imaging device 11. Furthermore, it cannot be assumed that there is no possibility that a charge accumulated in the photoelectric conversion layer 23 is not smoothly transferred to the first electrode 21. If such a phenomenon as just described occurs, this will lead to deterioration of the characteristics of the solid-state image sensor.

[0009] Accordingly, it is an object of the present disclosure to provide an imaging device configured and structured such that, during operation of the imaging device, movement of charge between adjacent imaging devices can be surely reduced and charge accumulated in a photoelectric conversion layer is smoothly transferred to a first electrode, and a solid-state image sensor including such an imaging device as just described. [Solution to the problem]

[0010] To achieve the above-described object, an imaging apparatus of the present disclosure comprises a first electrode, a charge accumulating electrode arranged at a distance from the first electrode, an insulating electrode arranged at a distance from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer disposed therebetween, and a second electrode formed on the photoelectric conversion layer, wherein the insulation electrode comprises a first insulation electrode and a second insulation electrode arranged at a distance from the first insulation electrode, and the first insulating electrode is arranged between the first electrode and the second insulating electrode.

[0011] A solid-state image sensor according to a first embodiment of the present disclosure for achieving the above-described object comprises a plurality of imaging device blocks each containing P × Q (where P ≥ 2 and Q ≥ 1) imaging devices such that P imaging devices are arranged in a first direction and Q imaging devices are arranged in a second direction different from the first direction, wherein each imaging device includes a first electrode, a charge accumulating electrode arranged at a distance from the first electrode, an insulating electrode arranged at a distance from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer disposed therebetween, and a second electrode formed on the photoelectric conversion layer, the insulating electrode comprising a first insulating electrode, a second insulating electrode and a third insulating electrode, the first isolation electrode is arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side in the imaging device block at least along the second direction, the second insulation electrode is arranged between imaging devices in the imaging device block and the third insulation electrode is arranged between imaging device blocks.

[0012] A solid-state image sensor according to a second embodiment of the present disclosure for achieving the above-described object includes a stacked-type imaging device including at least one imaging device of the present disclosure. [Brief description of the drawings] [ Fig. 1] Fig. 1 is a view schematically illustrating an arrangement state of a charge accumulating electrode, a first insulation electrode, a second insulation electrode, and a first electrode in a solid-state image sensor of a working example 1. [ Fig. 2] Fig. 2A and Fig. 2B are views schematically illustrating a potential of each electrode in the imaging device of Working Example 1. [ Fig. 3] Fig. 3A and Fig.3B are views schematically illustrating a potential of each electrode in the imaging device of Working Example 1. [ Fig. 4] Fig. 4A and Fig. 4B are views schematically illustrating a potential of each electrode in the imaging device of Working Example 1. [ Fig. 5] Fig. 5A, Fig. 5B and Fig. 5C are views schematically illustrating a potential of each electrode in the imaging device of Working Example 1. [ Fig. 6] Fig. 6A and Fig. 6B are views schematically illustrating a potential of each electrode in the imaging device of Working Example 1. [ Fig. 7] Fig. 7A and Fig.7B are each a view illustrating a part of each electrode on an enlarged scale to illustrate a positional relationship of the electrodes in the imaging device of Working Example 1, and a view illustrating a part of each electrode on an enlarged scale to illustrate a positional relationship of the electrodes in an imaging device in which no first insulation electrode is provided. [ Fig. 8] Fig. 8 is a schematic partial sectional view of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 9] Fig. 9 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 10] Fig. 10 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 11] Fig. 11 is a conceptual view of the solid-state image sensor of Working Example 1. [ Fig. 12] Fig. 12 is an equivalent circuit diagram of a modification of the imaging device and the stacked type imaging device of Working Example 1 (Modification 1 of Working Example 1). [ Fig. 13] Fig. 13 is a schematic sectional view of a modification of the imaging apparatus (two adjacent imaging apparatuses are shown) of Working Example 1 (Modification 2 of Working Example 1). [ Fig. 14] Fig. 14 is a view illustrating an arrangement state of a charge accumulating electrode, a first insulation electrode, a second insulation electrode, a third insulation electrode, and a first electrode in the solid-state image sensor of a working example 2. [ Fig. 15] Fig.15 is a view illustrating an arrangement state of a charge accumulating electrode, a first insulating electrode, a second insulating electrode, a third insulating electrode, and a first electrode in a modification of the solid-state image sensor of Working Example 2. [ Fig. 16] Fig. 16A and Fig. 16B are schematic partial sectional views of an imaging device (two imaging devices arranged side by side) of a working example 3 and a modification of the working example 3. [ Fig. 17] Fig. 17A and Fig. 17B are schematic partial sectional views of a different modification of the imaging device (two adjacent imaging devices) of a working example 3. [ Fig. 18] Fig.18 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 4. [ Fig. 19] Fig. 19 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 5. [ Fig. 20] Fig. 20 is a schematic partial sectional view of a modification of the imaging device and the stacked type imaging device of Working Example 5. [ Fig. 21] Fig. 21 is a schematic partial sectional view of another modification of the imaging apparatus of Working Example 5. [ Fig. 22] Fig. 22 is a schematic partial sectional view of another modification of the imaging apparatus of Working Example 5. [ Fig. 23] Fig.23 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 6. [ Fig. 24] Fig. 24 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 6. [ Fig. 25] Fig. 25 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 6. [ Fig. 26] Fig. 26 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 7. [ Fig. 27] Fig. 27 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 7. [ Fig. 28] Fig.28 is an equivalent circuit diagram of the imaging device and the stacked type imaging device of Working Example 7. [ Fig. 29] Fig. 29 is a schematic arrangement diagram of a first electrode and a charge accumulating electrode constituting the imaging device of Working Example 7. [ Fig. 30] Fig. 30 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 8. [ Fig. 31] Fig. 31 is a schematic partial sectional view illustrating, on an enlarged scale, a portion where a charge accumulating electrode, a photoelectric conversion layer, and a second electrode are stacked in the imaging device of Working Example 8. [ Fig. 32] Fig.32 is a schematic partial sectional view of a portion where a charge accumulating electrode, a photoelectric conversion layer, and a second electrode are stacked in an imaging device of Working Example 9, on an enlarged scale. [ Fig. 33] Fig. 33 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 10. [ Fig. 34] Fig. 34 is a schematic partial sectional view of an imaging device and a stacked type imaging device of a working example 11 and a working example 12. [ Fig. 35] Fig. 35A and Fig. 35B are schematic plan views of a segment of a charge accumulating electrode in Working Example 12. [ Fig. 36] Fig. 36A and Fig.36B are schematic plan views of the segment of a charge accumulating electrode in Working Example 12. [ Fig. 37] Fig. 37 is a schematic partial sectional view of an imaging device and a stacked type imaging device of Working Example 13 and Working Example 12. [ Fig. 38] Fig. 38A and Fig. 38B are schematic plan views of a segment of a charge accumulating electrode of Working Example 13. [ Fig. 39] Fig. 39 is a schematic partial sectional view of another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 40] Fig. 40 is a schematic partial sectional view of another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 41] Fig. 41A, Fig. 41B and Fig. 41C are schematic partial sectional views of a portion of a first electrode and so on of the further modification of the imaging device and the stacked type imaging device of Working Example 1 on an enlarged scale. [ Fig. 42] Fig. 42 is a schematic partial sectional view of still another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 43] Fig. 43 is a schematic partial sectional view of still another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 44] Fig. 44 is a schematic partial sectional view of still another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 45] Fig. 45 is a schematic partial sectional view of another modification of the imaging device and the stacked type imaging device of Working Example 6. [ Fig. 46] Fig. 46 is a schematic partial sectional view of still another modification of the imaging device and the stacked type imaging device of Working Example 1. [ Fig. 47] Fig. 47 is a schematic partial sectional view of still another modification of the imaging device and the stacked type imaging device of Working Example 6. [ Fig. 48] Fig.48 is a schematic partial sectional view of a portion where the charge accumulating electrode, the photoelectric conversion layer, and the second electrode are stacked in the modification of the imaging device of Working Example 8, on an enlarged scale. [ Fig. 49] Fig. 49 is a schematic partial sectional view of a portion where the charge accumulating electrode, the photoelectric conversion layer, and the second electrode are stacked in the modification of the imaging device of Working Example 9, on an enlarged scale. [ Fig. 50] Fig. 50 is a view schematically illustrating an arrangement state of the charge accumulating electrode, the first insulating electrode, the second insulating electrode, and the first electrode in the modification of the solid-state image sensor of Working Example 1. [ Fig. 51] Fig. 51A and Fig. 51B are views schematically illustrating an arrangement state of the charge accumulating electrode, the first insulating electrode, the second insulating electrode, and the first electrode in the modification of the solid-state image sensor of Working Example 1. [ Fig. 52] Fig. 52 is a view schematically illustrating an arrangement state of a charge accumulating electrode, a first insulating electrode, a second insulating electrode, a third insulating electrode, and a first electrode in a modification of the solid-state image sensor of Working Example 2. [ Fig. 53] Fig.53 is a view schematically illustrating an arrangement state of a charge accumulating electrode, a first insulating electrode, a second insulating electrode, a third insulating electrode, a charge discharging electrode, and a first electrode in the solid-state image sensor of Working Example 2 including a charge discharging electrode. [ Fig. 54] Fig. 54 is a schematic plan view of a charge accumulating electrode, a first insulating electrode, a second insulating electrode, a third insulating electrode, and a first electrode in the modification of the solid-state image sensor of Working Example 2. [ Fig. 55] Fig. 55A, Fig. 55B and Fig. 55C are diagrams illustrating an example of readout driving in the modification of the solid-state image sensor of Working Example 2 used in Fig. 54 is shown. [ Fig. 56] Fig. 56 is a conceptual view of an example in which a solid-state image sensor including the imaging device and the stacked-type imaging device of the present disclosure is used for an electronic device (camera). [ Fig. 57] Fig. 57 is a conceptual view of a conventional stacked-type imaging device (stacked-type solid-state image sensor). [ Fig. 58] Fig. 58 is a block diagram showing an example of a schematic configuration of a vehicle control system. [ Fig. 59] Fig. 59 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section. [ Fig. 60] Fig.60 is a view showing an example of a schematic configuration of an endoscopic surgery system. [ Fig. 61] Fig. 61 is a block diagram showing an example of a functional configuration of a camera head and a camera control unit (CCU). [Description of embodiments]

[0013] In the following, although the present disclosure will be described based on working examples with reference to the drawings, the present disclosure is not limited to the working examples, and various numerical values ​​and materials in the working examples are exemplary. It is particularly important to note that the description will be given in the following order. 1. Description with respect to the entirety of an imaging apparatus of the present disclosure and a solid-state image sensor according to a first embodiment and a second embodiment of the present disclosure. 2. Working Example 1 (Imaging Device of the Present Disclosure and Solid-State Image Sensor According to a Second Embodiment of the Present Disclosure) 3. Working Example 2 (Solid-state image sensor according to a first embodiment of the present disclosure) 4. Working Example 3 (Modification of Working Example 1 and Working Example 2) 5. Working Example 4 (Modification of Working Example 1 to Working Example 3) 6. Working Example 5 (Modification of Working Example 1 to Working Example 4) 7. Working Example 6 (Modification of Working Example 1 to Working Example 5, Imaging Device Including a Transmission Controlling Electrode) 8. Working Example 7 (Modification of Working Example 1 to Working Example 6, Imaging Device of the Present Disclosure Including a Plurality of Segments of a Charge Accumulating Electrode) 9. Working Example 8 (Modification of Working Example 1 to Working Example 6, Imaging Device of a First Configuration and a Sixth Configuration) 10. Working Example 9 (Imaging Device of a Second Configuration and Sixth Configuration of the Present Disclosure) 11. Working Example 10 (Imaging Device of a Third Configuration) 12. Working Example 11 (Imaging Device of a Fourth Configuration) 13. Working Example 12 (Imaging Device of a Fifth Configuration) 14. Working Example 13 (Imaging Device of a Sixth Configuration) 15. Miscellaneous <Beschreibung in Bezug auf eine Gesamtheit einer Bildgebungsvorrichtung der vorliegenden Offenbarung und eines Festkörper-Bildsensors gemäß einer ersten Ausführungsform und zweiten Ausführungsform der vorliegenden Offenbarung>

[0014] The solid-state image sensor according to the second embodiment of the present disclosure may be configured such that at least one lower imaging device is provided below an imaging device, and the wavelength of light received by the imaging device and the wavelength of light received by the lower imaging device are set to be different from each other. In this case, further, the solid-state image sensor may be configured such that two lower imaging devices are stacked.

[0015] The imaging device of the present disclosure or the imaging device of the present disclosure included in the solid-state image sensor according to the second embodiment of the present disclosure, which includes a preferred embodiment described above, may be configured such that the first isolation electrode has a potential of a fixed value V ES-1 and the second insulation electrode also has a potential of another fixed value V ES-2 or may be configured such that the first insulation electrode has a potential that differs from a fixed value V ES-1 changes (in particular to a value V ES-1' towards), and the second insulating electrode has a potential of a fixed value V ES-2 In those embodiments, the imaging device may be configured such that when a charge to be accumulated is electrons, V ES-1 > VES-2 is fulfilled, but if a charge to be accumulated is positive holes, V ES-1 < V ES-2 is fulfilled, or can be designed in such a way that V ES-2 = V ES-1 is fulfilled.

[0016] The solid-state image sensor according to the first embodiment of the present disclosure may be configured such that the third isolation electrode is shared by imaging device blocks adjacent to each other.

[0017] Furthermore, the solid-state image sensor according to the first embodiment of the present disclosure including the preferred embodiment described above may be configured such that the first isolation electrode is arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side in the imaging device block along the second direction, and The second isolation electrode is arranged between imaging devices placed side by side along the first direction, and is arranged at a distance from the first isolation electrode between imaging devices placed side by side along the second direction. In this case, the solid-state image sensor may further be configured such that the second isolation electrode and the third isolation electrode are connected to each other.

[0018] Alternatively, the solid-state image sensor according to the first embodiment of the present disclosure including the preferred embodiments described above may be configured such that the first isolation electrode is arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side in the imaging device block along the second direction, and further arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side along the first direction, and The second isolation electrode is arranged at a distance from the first isolation electrode between imaging devices placed side by side along the second direction, and further arranged at a distance from the first isolation electrode between imaging devices placed side by side along the first direction. In this case, the solid-state image sensor may further be configured such that the second isolation electrode and the third isolation electrode are connected to each other.

[0019] Furthermore, the solid-state image sensor according to the first embodiment of the present disclosure including the preferred embodiments and configurations described above may be configured such that the first isolation electrode has a potential with a fixed value V ES-1 and the second insulation electrode and the third insulation electrode also have a potential with a fixed value V ES-2 or may be configured so that the first insulation electrode has a potential that differs from a fixed value V ES-1 changes (in particular towards a value V ES-1' changes), and the second insulation electrode and the third insulation electrode have a potential with a fixed value V ES-2 In those embodiments, the solid-state image sensor may further be configured such that when a charge to be accumulated is electrons, V ES-1 > V ES-2is fulfilled, but if a charge to be accumulated is positive holes, V ES-1 < V ES-2 is fulfilled, or can be designed so that V ES-2 = V ES-1 is fulfilled.

[0020] Furthermore, the solid-state image sensor according to the first embodiment of the present disclosure, which includes the preferred embodiments and configurations described above, may be configured such that the first electrode is shared by P × Q imaging devices constituting an imaging device block. The solid-state image sensor may be further configured such that each of the imaging device blocks includes a control region, the control region includes at least one floating diffusion layer and one amplification transistor, and the shared first electrode is connected to the control region.

[0021] In such a way, in the solid-state image sensor according to the first embodiment of the present disclosure, since the first electrode is shared by the P×Q imaging devices constituting one imaging device block, the configuration and structure in a pixel region in which a plurality of imaging devices are arranged in an array can be simplified and refined. A floating diffusion layer is then provided for one imaging device block including the P×Q imaging devices. Here, the P×Q imaging devices provided for the one floating diffusion layer may include a plurality of first-type imaging devices described hereinafter, or may include at least one first-type imaging device and one or two or more second-type imaging devices described hereinafter.

[0022] Further, although not limiting, for the solid-state image sensor according to the first embodiment of the present disclosure including the preferred embodiments and configurations described above, P = 2 and Q = 2 are usable.

[0023] The solid-state image sensor according to the first embodiment of the present disclosure, which includes the preferred embodiments and configurations described above, may be further configured to include a stacked-type imaging device including at least one imaging device of the present disclosure. The solid-state image sensor according to the first embodiment of the present disclosure having such an embodiment as just described may be further configured to include a lower imaging device block composed of at least one layer below a plurality of imaging device blocks. the lower imaging device block contains a plurality of imaging devices (in particular P × Q imaging devices comprising P imaging devices along a first direction and Q imaging devices along a second direction) and the wavelength of light to be received by the imaging device constituting the imaging device block and the wavelength of light to be received by the imaging device constituting the lower imaging device block are different from each other. The solid-state image sensor according to the first embodiment of the present disclosure, including such a preferred embodiment as just described, may be further configured such that the lower imaging device block is provided in two layers. The solid-state image sensor according to the first embodiment of the present disclosure, including the preferred embodiments described above, may be further configured such that a plurality of (specifically, P × Q) imaging devices constituting the lower imaging device block include a shared floating diffusion layer.

[0024] The solid-state image sensor according to the first embodiment of the present disclosure, in the case where the first electrode is shared by four imaging devices constituting the imaging device block, may adopt, under the control of the isolation electrodes, a readout method according to which a charge accumulated in the four imaging devices is individually read out at a total of four times, or may adopt another readout method according to which a charge accumulated in the four imaging devices is simultaneously read out at a total of one time. The former method is sometimes referred to as a "first-mode readout method" for convenience of description, and the latter method is sometimes referred to as a "second-mode readout method" for convenience of description.According to the first-mode readout method, refinement of an image to be obtained by the solid-state image sensor can be achieved. According to the second-mode readout method, signals obtained from the four imaging devices are added to achieve an increase in sensitivity. Switching between the first-mode readout method and the second-mode readout method can be achieved by providing appropriate switching means in the solid-state image sensor. In the first-mode readout method, it is possible for the P×Q imaging devices of a floating diffusion layer to be shared by appropriately controlling the timing of a charge transfer period, and the P×Q imaging devices constituting the imaging device block to be connected to a drive circuit.However, control of the charge accumulating electrode is performed for each imaging device.

[0025] The imaging device of the present disclosure or the imaging device of the present disclosure incorporating the solid-state image sensors according to the first and second embodiments of the present disclosure including the preferred embodiments described above (hereinafter, such imaging devices are sometimes referred to collectively as "imaging device or the like of the present disclosure") may be configured such that the first insulating electrode, the second insulating electrode, and the third insulating electrode are provided in a region opposite to a region of the photoelectric conversion layer with an insulating layer interposed therebetween. It should be noted that, for convenience of description, the insulating electrodes are sometimes referred to as "lower first insulating electrode," "lower second insulating electrode," and "lower second insulating electrode," respectively."lower third insulating electrode," and sometimes referred to collectively as "lower insulating electrode." Alternatively, the imaging device or the like of the present disclosure may be configured such that the first insulating electrode, the second insulating electrode, and the third insulating electrode are provided on the photoelectric conversion layer at a distance from the second electrode. Note that, for convenience of description, the insulating electrodes are sometimes referred to as "upper first insulating electrode," "upper second insulating electrode," and "upper third insulating electrode," respectively, and sometimes referred to collectively as "upper insulating electrode."

[0026] Although in the imaging device and the like of the present disclosure, the insulation electrode is arranged at a distance from the first electrode and the charge accumulating electrode and surrounds the charge accumulating electrode, and the first insulation electrode is arranged between the first electrode and the second insulation electrode, in the case of the upper insulation electrode, an orthogonal projection image of the insulation electrode is positioned at a distance from orthogonal projection images of the first electrode and the charge accumulating electrode and surrounds an orthogonal projection image of the charge accumulating electrode, while an orthogonal projection image of the first insulation electrode is positioned between an orthogonal projection image of the first electrode and an orthogonal projection image of the second insulation electrode.In some cases, a portion of the orthogonal projection image of the second isolation electrode and a portion of the orthogonal projection image of the charge accumulation electrode may overlap with each other. Alternatively, the orthogonal projection image of the first isolation electrode is positioned adjacent to, but spaced apart from, the orthogonal projection image of the first electrode between imaging devices arranged at least along the second direction in the imaging device block, and the second isolation electrode is arranged between imaging devices in the imaging device block, while the third isolation electrode is arranged between imaging device blocks.

[0027] Reference numerals representing a potential to be applied to the various electrodes in the following description are given in Table 1 below. <Tabelle 1> Charge accumulation electrode Charge transfer period First electrode V 11 V 12 Second electrode V21 V22 Charge accumulation electrode First insulation electrode V31 V32 Case - 1 V ES-1 V ES-1 Case - 2 V ES-1 V ES-1' Second insulation electrode V ES-2 V ES-2 Third insulation electrode VES-3 V ES-3 a transmission-controlling electrode V41 V42 Charge discharging electrode V 51 V 52

[0028] The imaging device or the like of the present disclosure, including the preferred embodiments and configurations described above, may be configured to further include a semiconductor substrate, and the photoelectric conversion region is disposed above the semiconductor substrate. It is particularly noted that the first electrode, the charge accumulating electrode, the second electrode, the various insulation electrodes, and the various electrodes are connected to a drive circuit described hereinafter.

[0029] Furthermore, the imaging device or the like of the preferred embodiment including the above-described preferred embodiments and configurations may be configured such that the size of the charge accumulating electrode is larger than that of the first electrode. When the area of ​​the charge accumulating electrode is s1' and the area of ​​the first electrode is s1, 4≤s1' / s1 is preferably satisfied, although not limiting.

[0030] The second electrode positioned on the light incident side may be common to a plurality of imaging devices, except for a case where an upper insulating electrode is formed. In other words, the second electrodes may be formed as what is generally referred to as a fixed electrode. The photoelectric conversion layer may be common to a plurality of imaging devices. In particular, the imaging device or the like of the present disclosure may be configured such that a photoelectric conversion layer is formed in a plurality of imaging devices.

[0031] Furthermore, the imaging device or the like of the present disclosure, including the various preferred embodiments and configurations above, may be configured such that the first electrode extends in an opening provided in an insulating layer and is connected to the photoelectric conversion layer. Alternatively, the imaging device or the like of the present disclosure may be configured such that the photoelectric conversion layer extends in an opening provided in an insulating layer and is connected to the first electrode, and in this case, the imaging device or the like of the present disclosure may be configured such that an edge region of an upper side of the first electrode is covered with the insulating layer, the first electrode is exposed on a bottom or bottom surface of the opening and, When a surface of the insulating layer in contact with the upper surface of the first electrode is a first surface and another surface of the insulating layer in contact with a portion of the photoelectric conversion layer opposite the charge-accumulating electrode is a second surface, a side surface of the opening has a slope extending from the first surface toward the second surface. Further, the imaging device or the like of the present disclosure may be configured such that the side surface of the opening having the slope extending from the first surface to the second surface is positioned on the charge-accumulating electrode side.It is to be noted that this embodiment includes an embodiment in which any other layer is formed between the photoelectric conversion layer and the first electrode (for example, an embodiment in which a material layer suitable for charge accumulation is formed between the photoelectric conversion layer and the first electrode).

[0032] Furthermore, the imaging device or the like of the present disclosure including the preferred embodiments and configurations described above may be configured such that it further includes a control region provided on a semiconductor substrate and containing a drive circuit, the first electrode and the charge accumulating electrode are connected to the drive circuit, during a charge accumulation period from the control circuit a potential V 11applied to the first electrode, a potential V 31 is applied to the charge accumulating electrode and charge is accumulated in the photoelectric conversion layer, during a charge transfer period from the drive circuit a potential V 12 applied to the first electrode, a potential V 32 is applied to the charge accumulating electrode and a charge accumulated in the photoelectric conversion layer is read out into the control region via the first electrode. However, in the case where the potential of the first electrode is higher than the potential of the second electrode, V31≥V11 and V32 <V12 fulfilled; but in the case where the potential of the first electrode is lower than the potential of the second electrode, V31≥V11 and V32 <V12 fulfilled.

[0033] The imaging device or the like of the present disclosure, which includes the preferred embodiments and configurations described above, may also be configured to further include a transfer controlling electrode (charge transfer electrode) disposed between the first electrode and the charge accumulating electrode at a distance from the first electrode and the charge accumulating electrode, and disposed opposite the photoelectric conversion layer with an insulating layer interposed therebetween. It is particularly noted that such an imaging device or the like of the present disclosure having such an embodiment as just described will sometimes be referred to as "an imaging device or the like of the present disclosure including a transfer controlling electrode" for convenience of description.Further, in the imaging device or the like of the present disclosure including the transfer controlling electrode, when the potential V to be applied to the transfer controlling electrode during a charge accumulation period is 41 is, in the case where the potential of the first electrode is higher than the potential of the second electrode, it is preferred that V 41 ≤ V 11 and V 41 < V 31 are met. Furthermore, if the potential V to be applied to the transfer controlling electrode during a charge transfer period is 42 is, in the case where the potential of the first electrode is higher than the potential of the second electrode, it is preferred that V 32 ≤ V 42 ≤ V 12 is fulfilled.

[0034] The imaging device or the like of the present disclosure, which includes the preferred embodiments and configurations described above, may be further configured to include a charge-discharging electrode connected to the photoelectric conversion layer and spaced apart from the first electrode and the charge-accumulating electrode. It should be noted that, for convenience of description, the imaging device or the like of the present disclosure of such an embodiment as just described will be referred to as "the imaging device or the like of the present disclosure including a charge-discharging electrode."Furthermore, the imaging device or the like of the present disclosure including a charge-discharging electrode may be configured such that the charge-discharging electrode is arranged to surround the first electrode and the charge-accumulating electrode (i.e., in the shape of a picture frame). The charge-discharging electrode may be shared by (commonly arranged for) a plurality of imaging devices. In the case where the charge-discharging electrode is provided, it is preferable that the various insulating electrodes include an upper insulating electrode. In this case, the imaging device or the like may be configured such that. the photoelectric conversion layer extends into a second opening provided in the insulating layer and is connected to the charge-discharging electrode, an edge region of a top side of the charge-discharging electrode is covered with the insulating layer, the charge discharging electrode is exposed on a bottom surface of the second opening and, when a surface of the insulating layer in contact with the top surface of the charge-discharging electrode is a third surface and another surface of the insulating layer in contact with a portion of the photoelectric conversion layer opposite to the charge-accumulating electrode is a second surface, a side surface of the second opening has a slope extending from the third surface toward the second surface.

[0035] Moreover, the imaging device or the like of the present disclosure including the charge discharging electrode may be configured such that it further includes a control region provided on the semiconductor substrate and having a drive circuit, the first electrode, the charge accumulating electrode and the charge discharging electrode are connected to the drive circuit, during a charge accumulation period from the control circuit a potential V 11 applied to the first electrode, a potential V 31 is applied to the charge accumulating electrode and a potential V 51 is applied to the charge discharging electrode and charge is accumulated in the photoelectric conversion layer and during a charge transfer period from the control circuit a potential V 12 the first electrode, a potential V 32 the charge accumulating electrode and a potential V 52is applied to the charge-discharging electrode and the charge accumulated in the photoelectric conversion layer is read out to the control region via the first electrode. However, in the case where the potential of the first electrode is higher than the potential of the second electrode, V51≥V11 and V52 <V12 fulfilled; but if the potential of the first electrode is lower than the potential of the second electrode, V51≥V11 and V52 <V12 fulfilled.

[0036] Furthermore, the imaging device or the like of the present disclosure, including the preferred embodiments and configurations described above, may be configured such that the charge accumulating electrode includes a plurality of charge accumulating electrode segments. Note that the imaging device or the like of the present disclosure, such an embodiment as just described, is sometimes referred to as "the imaging device or the like of the present disclosure including a plurality of charge accumulating electrode segments" for convenience of description. The number of charge accumulating electrode segments may be two or more.Furthermore, the imaging device or the like of the present disclosure including a plurality of charge accumulating electrode segments may be configured such that, in the case where a different potential is applied to each of the N charge accumulating electrode segments, in the case where the potential of the first electrode is higher than the potential of the second electrode, the potential to be applied to the segment of a charge accumulating electrode positioned closest to the first electrode (first segment of a photoelectric conversion region) during a charge transfer period is higher than the potential to be applied to the segment of a charge accumulating electrode positioned furthest from the first electrode (N-th segment of a photoelectric conversion region), and in the case where the potential of the first electrode is lower than the potential of the second electrode, the potential to be applied to the segment of a charge accumulating electrode positioned closest to the first electrode (first segment of a photoelectric conversion region) during a charge transfer period is lower than the potential to be applied to the segment of a charge accumulating electrode positioned farthest from the first electrode (N-th segment of a photoelectric conversion region).

[0037] Furthermore, the imaging device or the like of the present disclosure including the preferred embodiments and configurations described above may be configured such that at least one floating diffusion layer and one amplification transistor forming a control region are provided on a semiconductor substrate and the first electrode is connected to the floating diffusion layer and a gate region of the amplification transistor. Further, in this case, the imaging device or the like of the present disclosure including the preferred embodiments and configurations described above may be configured such that further comprising a reset transistor and a selection transistor forming the control region provided on the semiconductor substrate, the floating diffusion layer is connected to one of the source / drain regions of the reset transistor and one of the source / drain regions of the amplification transistor is connected to one of the source / drain regions of the selection transistor and the other of the source / drain regions of the selection transistor is connected to a signal line.

[0038] Alternatively, as a modification of the imaging device or the like of the present disclosure including the above-described preferred embodiments and configurations, imaging devices from a first configuration to a sixth configuration to be described below may be listed. Specifically, in the imaging devices of the first configuration to the sixth configuration in the imaging device or the like of the present disclosure including the above-described preferred embodiments and configurations, the photoelectric conversion region N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, in the imaging devices of the first configuration to the third configuration, the charge accumulating electrode comprises N segments of a charge accumulating electrode, in the imaging devices of the fourth configuration and the fifth configuration, the charge accumulating electrode comprises N segments of a charge accumulating electrode arranged at a distance from one another, the n-th (where n = 1, 2, 3 ..., N) segment of a photoelectric conversion region includes the n-th segment of a charge accumulating electrode, the n-th segment of an insulating layer and the n-th segment of a photoelectric conversion layer, and a segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode.

[0039] In the imaging device of the first configuration, the thickness of the insulating layer segment gradually changes over a range from the first photoelectric conversion region segment to the Nth photoelectric conversion region segment. Meanwhile, in the imaging device of the second configuration, the thickness of the photoelectric conversion layer segment gradually changes over a range from the first photoelectric conversion region segment to the Nth photoelectric conversion region segment. Furthermore, in the imaging device of the third configuration, the material constituting the insulating layer segment is different between adjacent photoelectric conversion region segments.Furthermore, in the imaging device of the fourth configuration, the material constituting the charge-accumulating electrode segment differs between adjacent photoelectric conversion region segments. Furthermore, in the imaging device of the fifth configuration, the area of ​​the charge-accumulating electrode segment gradually decreases over a range from the first photoelectric conversion region segment to the Nth photoelectric conversion region segment. It is particularly noted that the area may decrease continuously or may decrease in a stepwise manner.

[0040] Alternatively, in the imaging device of the sixth configuration, in the imaging device or the like of the present disclosure including the preferred embodiments and configurations described above, when the stacking direction of the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer is a Z direction and the direction away from the first electrode is an X direction, the cross-sectional area of ​​the stacked portion changes when the stacked portion in which the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer are stacked is cut along a virtual YZ plane, depending on the distance from the first electrode. Note that the change in the cross-sectional area may be a continuous change or a step-like change.

[0041] In the imaging devices of the first configuration and the second configuration, N segments of a photoelectric conversion layer are provided continuously, while the N segments of an insulating layer are also provided continuously, and the N segments of a charge accumulating electrode are also provided successively. In the imaging devices of the third configuration to the fifth configuration, N segments of a photoelectric conversion layer are provided continuously. Further, in the imaging devices of the fourth configuration and the fifth configuration, while the N segments of an insulating layer are provided continuously, in the imaging device of the third configuration, the N segments of an insulating layer are individually provided corresponding to the segments of a photoelectric conversion region.Furthermore, in the imaging devices of the fourth configuration and the fifth configuration, and in some cases in the imaging device of the third configuration, the N segments of a charge accumulating electrode are individually provided corresponding to the segments of a photoelectric conversion region. In the imaging devices of the first configuration to the sixth configuration, the same potential is applied to all the segments of a charge accumulating electrode. Alternatively, in the imaging devices of the fourth configuration and the fifth configuration, and in some cases in the imaging device of the third configuration, a different potential may be applied to each of the N segments of a charge accumulating electrode.

[0042] In the imaging devices of the first configuration to the sixth configuration and the solid-state image sensors according to the first embodiment and the second embodiment of the present disclosure to which such imaging devices are applied, the thickness of the insulating layer segment is defined, the thickness of the photoelectric conversion layer segment is defined, the material constituting the insulating layer segment is different, the material constituting the charge accumulating electrode segment is different, the area of ​​the charge accumulating electrode segment is defined, or the cross-sectional area of ​​the stacked region is defined. Therefore, a type of charge transfer gradient is formed so that charge generated by photoelectric conversion can be transferred to the first electrode more easily and surely. As a result, the occurrence of an afterimage can be prevented.: after-image) and the occurrence of a residual charge transfer can be prevented.

[0043] As a modification of the solid-state image sensor according to the first embodiment of the present disclosure, a solid-state image sensor including a plurality of imaging devices of the first configuration to the sixth configuration may be used, and as a modification of the solid-state image sensor according to the second embodiment of the present disclosure, a solid-state image sensor including a plurality of stacked-type imaging devices each including at least one of the imaging devices of the first configuration to the sixth configuration described above may be realized.

[0044] Although in the imaging devices of the first configuration to the fifth configuration, a segment of a photoelectric conversion region with a higher value of n is positioned away from the first electrode, whether or not the segment of a photoelectric conversion region is positioned away from the first electrode is determined with reference to the X direction. Furthermore, although in the imaging device of the sixth configuration, the direction away from the first electrode is determined as the X direction, the "X direction" is defined as follows. Specifically, a pixel region in which a plurality of imaging devices or stacked-type imaging devices are arranged in an array includes a plurality of pixels regularly arranged in a two-dimensional array, that is, in the X direction and the Y direction in an array.In the case where the planar shape of a pixel is a quadrilateral, the direction in which a side of the quadrilateral closest to the first electrode extends is defined as the Y direction, and a direction orthogonal to the Y direction is defined as the X direction. Alternatively, in the case where the planar shape of a pixel is to have any shape, a general direction including a line segment or curved line closest to the first electrode is defined as the Y direction, and a direction orthogonal to the Y direction is defined as the X direction.

[0045] In the following, the imaging devices of the first configuration to the sixth configuration will be described with reference to a case where the potential of the first electrode is higher than the potential of the second electrode. However, in the case where the potential of the first electrode is lower than the potential of the second electrode, it is sufficient if the potential is reversed between high and low levels.

[0046] In the imaging device of the first configuration, the thickness of the insulating layer segment gradually changes over a range from the first segment of a photoelectric conversion region to the Nth segment of a photoelectric conversion region; the thickness of the insulating layer segment can gradually increase or gradually decrease. This forms a type of charge transfer gradient.

[0047] In the case where the charge to be accumulated is electrons, it is sufficient to adopt a configuration in which the thickness of the insulating layer segment gradually increases; but in the case where the charge to be accumulated is positive holes, it is sufficient to adopt a configuration in which the thickness of the insulating layer segment gradually increases. Furthermore, in those cases, if one enters a state such as |V 31 | ≥ |V 11 | occurs, then the n-th segment of a photoelectric conversion region will accumulate a larger amount of charge than the (n+1)-th segment of a photoelectric conversion region, and a stronger electric field will be applied. Therefore, a flow of charge from the first segment of a photoelectric conversion region to the first electrode can be reliably prevented. If one enters a state such as |V 32| < |V 12 | occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be assuredly ensured.

[0048] In the imaging device of the second configuration, the thickness of the photoelectric conversion layer segment gradually changes over a range from the first photoelectric conversion region segment to the Nth photoelectric conversion region segment; the thickness of the photoelectric conversion layer segment can gradually increase or gradually decrease. Therefore, a type of charge transfer gradient is formed.

[0049] In the case where the charge to be accumulated is electrons, it is sufficient to adopt a configuration in which the thickness of the photoelectric conversion layer segment gradually increases; but in the case where the charge to be accumulated is positive holes, it is sufficient to adopt a configuration in which the thickness of the photoelectric conversion layer segment gradually increases. Furthermore, in the case where the thickness of the photoelectric conversion layer segment gradually increases, if one enters a state such as V during a charge accumulation period, 31 ≥ V 11 occurs, or in the case of the thickness of the segment of a photoelectric conversion layer gradually increases if one enters a state such as V during a charge accumulation period 31 ≤ V 11occurs, then a stronger electric field is applied to the n-th segment of a photoelectric conversion region than that applied to the (n+1)-th segment of a photoelectric conversion region, and a flow of charge from the first segment of a photoelectric conversion region to the first electrode can be reliably prevented. During a charge transfer period, then, in the case where the thickness of the segment of a photoelectric conversion layer gradually increases, if one enters a state such as V 32 < V 12 occurs, or in the case where the thickness of the segment of a photoelectric conversion layer gradually increases, if one enters such a state as V 32 > V 12occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be securely ensured.

[0050] In the imaging device of the third configuration, the material forming the segment of an insulating layer is different between adjacent segments of a photoelectric conversion region, and thereby a type of charge transfer gradient is formed. However, preferably, the value of the relative permittivity of the material forming the segments of an insulating layer gradually decreases over a range from the first segment of a photoelectric conversion region to the N-th segment of a photoelectric conversion region. If, during a charge accumulation period, by adopting such a configuration as just described, one enters a state such as V 31 ≥ V 11occurs, then the n-th segment of a photoelectric conversion region can accumulate a larger amount of charge than the (n+1) -th segment of a photoelectric conversion region. If one enters a state such as V during a charge transfer period, 32 < V 12 occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be assuredly ensured.

[0051] In the imaging device of the fourth configuration, the material constituting the charge-accumulating electrode segment is different between adjacent segments of a photoelectric conversion region, thereby forming a type of charge transfer gradient. However, preferably, the work function value of the material constituting the insulating layer segment gradually increases over a range from the first segment of a photoelectric conversion region to the Nth segment of a photoelectric conversion region. Furthermore, by adopting such a configuration as just described, a potential gradient favorable for signal charge transfer can be formed without relying on the positive / negative voltage (potential).

[0052] In the imaging device of the fifth configuration, the area of ​​the segment of a charge-accumulating electrode gradually decreases over a range from the first segment of a photoelectric conversion region to the N-th segment of a photoelectric conversion region. Since this forms a kind of charge transfer gradient, if one enters a state such as V during a charge accumulation period, 31 ≥ V 11 occurs, then the n-th segment of a photoelectric conversion region will accumulate a larger amount of charge than the (n+1)-th segment of a photoelectric conversion region. If one enters a state such as V during a charge transfer period, 32 < V 12occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be assuredly ensured.

[0053] In the imaging device of the sixth configuration, the cross-sectional area of ​​the stacked region changes depending on the distance from the first electrode, and thereby a type of charge transfer gradient is formed. Specifically, if a configuration is adopted in which the thickness of the cross-section of the stacked region is fixed and the width of the cross-sectional area of ​​the stacked region decreases with increasing distance from the first electrode, similar to the description of the imaging device of the fifth configuration, if one enters a state such as V during a charge accumulation period,31 ≥ V 11 occurs, an area positioned closer to the first electrode will accumulate a larger amount of charge than a more distant area. Accordingly, if one enters a state such as V 32 < V 12 occurs, then a flow of charge from the region closer to the first electrode to the first electrode and a flow of charge from the more distant region to the closer region can be assured. On the other hand, if a configuration in which the width of the cross section of the stacked region is fixed and the thickness of the cross section of the stacked region, particularly the thickness of the segment of an insulating layer, gradually increases is adopted, similarly to the description of the imaging device of the first configuration, if one enters such a state as V during a charge accumulation period 31 ≥ V 11occurs, then the area closer to the first electrode will accumulate a larger amount of charge than the area further away, and a stronger electric field will be applied, which can reliably prevent a flow of charge from the area closer to the first electrode to the first electrode. If one enters a state such as V during a charge transfer period, 32 < V 12 occurs, then a flow of charge from the region closer to the first electrode to the first electrode and a flow of charge from the more distant region to the closer region can be assured. Furthermore, if a configuration in which the thickness of the photoelectric conversion layer segment gradually increases is adopted, similarly to the description of the imaging device of the second configuration, if one enters a state such as V during a charge accumulation period, the photoelectric conversion layer will gradually increase in thickness. 31 ≥ V 11occurs, then a stronger electric field is applied to the area closer to the first electrode than to the area further away, and a flow of charge from the area closer to the first electrode to the first electrode can be reliably prevented. If one enters a state such as V during a charge transfer period, 32 < V 12 occurs, a flow of charge from the area closer to the first electrode to the first electrode and a flow of charge from the more distant area to the closer area can be reliably ensured.

[0054] The imaging device or the like of the present disclosure, which includes the preferred embodiments and configurations described above, may further be configured such that light is incident from the second electrode side, and a shading layer is formed on the light incident side closer to the second electrode. Alternatively, the imaging device or the like of the present disclosure may be configured such that light is incident from the second electrode side, but light is not incident on the first electrode (in some cases, on the first electrode and the transmission-controlling electrode).In this case, further, the imaging device or the like of the present disclosure may be configured such that a shading layer is formed above the first electrode (in some cases, above the first electrode and the transfer controlling electrode) and on the light incident side closer to the second electrode, or may be configured such that an on-chip microlens is provided above the charge accumulating electrode and the second electrode so that light incident on the on-chip microlens is focused on the charge accumulating electrode. Here, the shading layer may be disposed above the surface of a light incident side of the second electrode or on a surface of the light incident side of the second electrode. In some cases, the shading layer may be formed on the second electrode.As the material for configuring the shading layer, chromium (Cr), copper (Cu), aluminum (Al), tungsten (W), and a resin that does not transmit light (for example, a polyimide resin) can be exemplified.

[0055] Specifically, as the imaging device or the like of the present disclosure, there may be used an imaging device (referred to as a “first-type blue light imaging device” for convenience of description) having sensitivity to blue light and including a photoelectric conversion layer (referred to as a “first-type blue light photoelectric conversion layer” for convenience of description) that absorbs blue light (light of 425 to 495 nm), an imaging device (referred to as a “first-type green light imaging device” for convenience of description), having sensitivity to green light and including a photoelectric conversion layer (referred to as a “first-type green light photoelectric conversion layer” for convenience of description),which absorbs green light (light from 495 to 570 nm), and an imaging device (referred to as a "first-type red light imaging device" for convenience of description) having red light sensitivity and including a photoelectric conversion layer (referred to as a "first-type red light photoelectric conversion layer" for convenience of description) that absorbs red light (light from 620 to 750 nm) are exemplified. On the other hand, a conventional imaging device that does not include a charge-accumulating electrode and has blue light sensitivity is referred to as a "second-type blue light imaging device" for convenience of description.For the sake of convenience, a conventional imaging device that does not include a charge-accumulating electrode and has sensitivity to red light will be referred to as a "second-type red light imaging device" for the sake of convenience. Furthermore, a photoelectric conversion layer constituting a second-type blue light imaging device will be referred to as a "second-type blue light photoelectric conversion layer" for the sake of convenience. A photoelectric conversion layer constituting a second-type green light imaging device will be referred to as a "second-type green light photoelectric conversion layer" for the sake of convenience.which forms a second type red light imaging device, for convenience of description, will be referred to as “second type red light photoelectric conversion layer”.

[0056] Although the stacked-type imaging device of the present disclosure includes at least one imaging device or the like (photoelectric conversion device) of the present disclosure, in particular, a stacked-type imaging device configured and constructed as follows can be exemplified: [A] a stacked-type imaging device configured and constructed such that a first-type blue light photoelectric conversion region, a first-type green light photoelectric conversion region, and a first-type red light photoelectric conversion region are stacked in the vertical direction, and Control regions of the first type blue light imaging device, the first type green light imaging device, and the first type red light imaging device are each provided on a semiconductor substrate; [B] a stacked-type imaging device configured and constructed such that the first-type blue light photoelectric conversion region and the first-type green light photoelectric conversion region are stacked in the vertical direction, a second-type red light photoelectric conversion region is disposed under the two layers of the first-type photoelectric conversion regions, and Control regions of the first type blue light imaging device, the first type green light imaging device, and the second type red light imaging device are each provided on a semiconductor substrate; [C] a stacked-type imaging device configured and constructed such that a second-type blue light photoelectric conversion region and the second-type red light photoelectric conversion region are arranged below the first-type green light photoelectric conversion region, and Control regions of the first type green light imaging device, the second type blue light imaging device, and the second type red light imaging device are each provided on a semiconductor substrate; and [D] a stacked-type imaging device configured and constructed such that a second-type green light photoelectric conversion region and the second-type red light photoelectric conversion region are disposed below the first-type blue light photoelectric conversion region, and Control regions of the first-type blue light imaging device, the second-type green light imaging device, and the second-type red light imaging device are each provided on a semiconductor substrate. It is particularly noteworthy that the order of arrangement of the photoelectric conversion regions of the imaging devices in the vertical direction from the light incident direction is preferably the order of the blue light photoelectric conversion region, the green light photoelectric conversion region, and the red light photoelectric conversion region, or from the light incident direction, the order of the green light photoelectric conversion region, the blue light photoelectric conversion region, and the red light photoelectric conversion region.This is because, on the incident surface side, light of a shorter wavelength is absorbed with higher efficiency. Since red light has the longest wavelength among the three colors, it is preferable to position the red light photoelectric conversion region in the lowest layer as viewed from the light incident surface. One pixel is configured from a stacked structure of the imaging devices. Further, the first-type photoelectric conversion region for red light may be provided. Here, the photoelectric conversion layer of the first-type photoelectric conversion region for red light is preferably formed of, for example, an organic material and placed in the lowest layer of the stacked structure of the first-type imaging devices, but higher than the second-type imaging devices.Alternatively, the photoelectric conversion layer of the second type red light photoelectric conversion region may be provided among the first type photoelectric conversion regions.

[0057] In the first type of imaging devices, for example, the first electrode is formed on an interlayer insulating layer provided on the semiconductor substrate. The imaging device formed on the semiconductor substrate may be configured like a back-illuminated type or a front-illuminated type.

[0058] In the case where the photoelectric conversion layer is formed of an organic material, the photoelectric conversion layer may be formed in one of four embodiments, comprising: (1) an embodiment in which it is formed from a p-type organic semiconductor; (2) an embodiment in which it is formed from an n-type organic semiconductor; (3) an embodiment in which it is configured from a stacked structure of a p-type organic semiconductor layer / an n-type organic semiconductor layer, it is configured from a stacked structure of a p-type organic semiconductor layer / a mixed layer (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor / an n-type organic semiconductor layer, it is configured from a stacked structure of a p-type organic semiconductor layer / a mixed layer (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor, or it is configured from a stacked structure of an n-type organic semiconductor layer, a mixed layer (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor; and (4) an embodiment in which it is configured from a mixture (bulk heterostructure) of a p-type organic semiconductor and an n-type organic semiconductor. It is particularly noteworthy that a configuration in which the layer order is changed can optionally be used.

[0059] As the p-type organic semiconductor, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene derivatives, triallylamine derivatives, carbazole derivatives, perylene derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes with a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives and so on can be used.As the n-type organic semiconductor, fullerenes and fullerene derivatives <zum Beispiel Fullerene wie etwa C60, C70 und C74 (höhere Fullerene), einkapselnde Fullerene und so weiter) oder Fulleren-Derivate (zum Beispiel Fulleren-Fluoride, PCBM-Fulleren-Verbindungen, Fullere-Multimere und so weiter)> , organic semiconductors whose HOMO and LUMO are larger (deeper) than those of p-type organic semiconductors, transparent inorganic metal oxides, and so on.As the n-type organic semiconductor, particularly heterocyclic compounds containing nitrogen atoms, oxygen atoms or sulfur atoms, such as organic molecules having at their molecular skeleton pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, subporphyrazine derivatives, polyphenylenevinylene derivatives, polybenzothiadiazole derivatives, polyfluorene derivatives and so on, organometallic complexes and subphthalocyanine derivatives are used, for example.As a group or the like contained in the fullerene derivatives, there can be used halogen atoms, linear, branched or cyclic alkyl groups or phenyl groups, groups having a linear or aromatic condensed ring compound; groups having a halide; partial fluoroalkyl groups, perfluoroalkyl groups, cyrilalkyl groups, cyrilalkoxy groups, arylsilyl groups, arylsulfanyl groups, alkylsulfanyl groups, arylsulfonyl groups, alkylsulfonyl groups, aryl sulfide groups; alkyl sulfide groups, amino groups, alkylamino groups, arylamino groups, hydroxy groups, alkoxy groups, acylamino groups, acyloxy groups, carbonyl groups, carboxy groups, carboxamide groups, carboalcoxy groups, acyl groups, sulfonil groups, cyano groups, nitro groups, groups having a chalcogenide, phosphine groups, phosphono groups and derivatives thereof.Although not limiting, the thickness of the photoelectric conversion layer formed of an organic material (sometimes referred to as “organic photoelectric conversion layer”) can be taken as, for example, 1 × 10. -8 up to 5 × 10 -7 m, preferably 2.5 × 10 -8 up to 3 × 10 -7 m, preferably 2.5 × 10 -8 up to 2 × 10 -7 m, most preferably 1 × 10 -7 up to 1.8 × 10 -7 m can be cited as examples. It is particularly worth noting that, although organic semiconductors are often classified into p-type and n-type, the p-type means that positive holes are readily transported, and the n-type means that electrons are readily transported; the interpretation that the organic semiconductor has positive holes or electrons as multiple carriers of thermal excitation like inorganic semiconductors is not limiting.

[0060] Meanwhile, as a material for configuring an organic photoelectric conversion layer for photoelectrically converting green light, a rhodamine dye, a melacianine pigment, a quinacridone derivative, a subphthalocyanine pigment (subphthalocyanine derivative), and so on can be used. As a material for configuring an organic photoelectric conversion layer for photoelectrically converting blue light, for example, a coumarinic acid pigment, a tris-8-hydroxyquinoline aluminum (Alq3), a melacianine pigment, and so on can be used. Further, as a material for configuring an organic photoelectric conversion layer for photoelectrically converting red light, for example, a phthalocyanine pigment and a subphthalocyanine pigment (subphthalocyanine derivative) can be used.

[0061] Alternatively, as an inorganic material for configuring a photoelectric conversion layer, crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2, which are calcopalite compounds; GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, which are III-V group compounds; or further, compound semiconductors such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS, can be used. Furthermore, it is also possible to use quantum dots formed from these materials for the photoelectric conversion layer.

[0062] Alternatively, the photoelectric conversion layer may be formed in a stacked structure of a lower-layer semiconductor layer and an upper-layer photoelectric conversion layer. By providing the lower-layer semiconductor layer in this manner, for example, it is possible to prevent recombination upon charge accumulation. Furthermore, the charge transfer efficiency of the charge accumulated in the photoelectric conversion layer with respect to the first electrode can be increased. Furthermore, it is possible to temporarily hold a charge generated in the photoelectric conversion layer and control the transfer timing, etc. Furthermore, generation of a dark current can be suppressed.It is sufficient if the material for configuring the lower-layer photoelectric conversion layer is appropriately selected from the various materials constituting the photoelectric conversion layer described above. However, as the material for configuring the lower-layer semiconductor layer, it is preferable to use a material that has a high band gap energy value (for example, a band gap energy value of 3.0 eV or more) and also has a higher mobility than that of the material for configuring the photoelectric conversion layer.In particular, oxide semiconductor materials, transition metal dichalcogenide, silicon carbide, diamond, graphene, carbon nanotubes and organic semiconductor materials such as condensed polycyclic hydride compounds or condensed hydrocyclic compounds can be exemplified and can be used in particular as the oxide semiconductor material, indium oxide, gallium oxide, zinc oxide, tin oxide, materials containing at least one of the oxides, materials with a dopant added to the materials, specifically for example IGZO-, ITZO-, IWZO-, IWO-, ZTO-, ITO-SiO. xMaterials such as GZO, IGO, ZnSnO3, AlZnO, GaZnO, and InZnO can be used. Materials including CuI, InSbO4, ZnMgO, CuInO2, MgIn2O4, CdO, or the like can be used. However, these materials are not limiting. Alternatively, as a material for configuring the lower-layer semiconductor layer, in the case where a charge to be accumulated is electrons, a material having a higher ionization potential than the ionization potential of the material constituting the photoelectric conversion layer can be used. In the case where a charge to be accumulated is positive holes, a material having a lower electron affinity than the electron affinity of the material constituting the photoelectric conversion layer can be used. Alternatively, the impurity concentration of the material constituting the lower-layer semiconductor layer is preferably 1 × 10 18 cm -3or less. The lower-layer semiconductor layer may have a single-layer configuration or may have a multi-layer configuration. Furthermore, the material constituting the lower-layer semiconductor layer positioned above the charge-accumulating electrode and the material constituting the lower-layer semiconductor layer positioned above the first electrode may be made different from each other.

[0063] A single-plate type solid-state image sensor can be configured from the solid-state image sensors according to the first embodiment and the second embodiment of the present disclosure.

[0064] In the solid-state image sensor according to the first embodiment and the second embodiment of the present disclosure, which includes a stacked-type imaging device as distinct from a solid-state image sensor including imaging devices of a Bayer array (that is, spectroscopy of blue, green, and red using a color filter is not performed), one pixel is configured by stacking imaging devices having sensitivity to light of a plurality of different wavelengths in an incident direction of light in the same pixel, and thus an improvement in sensitivity and an improvement in pixel density per unit volume can be achieved.Furthermore, since organic materials have a high absorption coefficient, the film thickness of the organic photoelectric conversion layer can be reduced compared with a conventional Si-type photoelectric conversion layer, and light leakage from a neighboring pixel or limitation of the light incident angle is alleviated. Although a conventional Si-type imaging device suffers from false color because it generates a color signal by performing an interpolation process among pixels of three colors, in the solid-state image sensor according to the second embodiment of the present disclosure, which includes the stacked-type imaging device, occurrence of false color can be reduced. Furthermore, since the organic photoelectric conversion layer itself also serves as a color filter, color separation can be performed even when no color filter is disposed.

[0065] On the other hand, in the solid-state image sensor according to the first embodiment of the present disclosure, which includes not the stacked type imaging device but the imaging device using a color filter, a demand for a spectroscopic characteristic of blue, green, and red can be alleviated, and high mass productivity is achieved.As the array of imaging devices in the solid-state image sensor according to the first embodiment of the present disclosure, in addition to a Bayer array, an interline array, a G-stripe and RB checkerboard array, a G-stripe and full RB checkerboard array, a complementary color checkerboard array, a stripe array, a slant stripe array, a primary color difference array, a field color difference sequential array, a frame color difference sequential array, a MOS-type array, an enhanced MOS-type array, a frame interleaved array, and a field interleaved array can be used. Here, a pixel (or subpixel) can be configured from a single imaging device.

[0066] A pixel region in which a plurality of imaging devices or the like of the present disclosure or a plurality of stacked-type imaging devices in the present disclosure are arrayed includes a plurality of pixels regularly arrayed in a two-dimensional array. The pixel region typically includes an effective pixel region in which light is actually received and a signal charge generated by photoelectric conversion is amplified and read out to a readout circuit, and a black reference pixel region for outputting optical black, which becomes a reference for the black level. The black reference pixel region is typically arranged on an outer peripheral portion of the effective pixel region.

[0067] In the imaging device or the like of the present disclosure including the above-described embodiments and configurations, light is utilized, and photoelectric conversion occurs in the photoelectric conversion layer, followed by carrier separation into positive holes (holes) and electrons. The electrode from which the positive holes are extracted is then designated as the anode, and the electrode from which the electrons are extracted is designated as the cathode. Not only an embodiment in which the first electrode forms the anode and the second electrode forms the cathode, but also an embodiment in which, conversely, the first electrode forms the cathode and the second electrode forms the anode are available.

[0068] In the case where a stacked-type imaging device is configured, it may be configured such that the first electrode, the charge accumulating electrode, the various insulating electrodes, the transfer controlling electrode, the charge discharging electrode, and the second electrode are formed of a transparent conductive material. It is particularly noteworthy that the first electrode, the charge accumulating electrode, the various insulating electrodes, the transfer controlling electrode, and the charge discharging electrode are sometimes referred to collectively as "first electrode, etc." Alternatively, in the case where the imaging device or the like of the present disclosure is arranged on a plane, for example, like a Bayer array, the stacked-type imaging device may be configured such thatthat the second electrode is formed of a transparent conductive material, and the first electrode, the charge-accumulating electrode, and so on are formed of a metal material. In this case, the stacked-type imaging device may be specifically configured such that the second electrode positioned on the light-incident side is formed of a transparent conductive material, and the first electrode, and so on, are formed of, for example, Al-ND (alloy of aluminum and neodymium) or ASC (alloy of aluminum, samarium, and copper). It is particularly noteworthy that an electrode made of a transparent conductive material is sometimes referred to as a "transparent electrode." Here, the band gap energy of the transparent conductive material is 2.5 eV or more, preferably 3.1 eV or more. As the transparent conductive material constituting the transparent electrode,a metal oxide with conductivity can be used. In particular, indium oxide, indium tin oxide (ITO, indium tin oxide containing Sn-doped In2O3, crystalline ITO and amorphous ITO), indium zinc oxide (IZO, indium zinc oxide) where indium is added as a dopant zinc oxide, indium gallium oxide (IGO) where indium is added as a dopant gallium oxide, indium gallium zinc oxide (IGZO, In-GaZnO4) where indium and gallium are added as dopant zinc oxide, indium tin-zinc oxide (ITZO) where indium and tin are added as dopant zinc oxide, IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO doped with a different element), aluminum zinc oxide (AZO) where aluminum is added as dopant zinc oxide Gallium zinc oxide (GZO), where gallium is added as a dopant zinc oxide, titanium oxide (TiO2), niobium titanium oxide (TNO), where niobium is added as a dopant titanium oxide, antimony oxide,A spinel-type oxide and an oxide with a Yb-Fe2O4 structure can be used. Alternatively, a transparent electrode with gallium oxide, titanium oxide, niobium oxide, nickel oxide, or the like as the mother layer can be used. The thickness of the transparent electrode can be 2 × 10. -8 up to 2 × 10 -7 m, preferably 3 × 10 -8 up to 1 × 10 -7 m, may be used. In the case where transparency is required for the first electrode, it is preferable, from the point of view of simplifying the manufacturing process, that the other electrodes also be formed of a transparent conductive material.

[0069] Alternatively, in the case where transparency is not required, a conductive material for forming an anode with a function as an electrode for extracting positive holes is preferably formed of a conductive material having a high work function (for example, φ = 4.5 to 5.5 eV). Specifically, gold (Au), silver (Ag), chromium (Cr), nickel (Ni), palladium (Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re), and tellurium (Te) can be exemplified. On the other hand, a conductive material for forming a cathode with a function as an electrode for extracting electrons is preferably formed of a conductive material having a low work function (for example, φ = 3.5 to 4.5 eV).In particular, alkali metals (for example Li, Na, K and so on) and fluorides or oxides thereof, alkaline earth metals (for example Mg, Ca and so on) and fluorides or oxides thereof, aluminum (Al), zinc (Zn), tin (Sn) thallium (Tl), sodium-potassium alloys, aluminum-lithium alloys, magnesium-silver alloys, rare earth metals such as indium and ytterbium or alloys of them may be used.Alternatively, as a material for configuring an anode or a cathode, conductive materials such as metals including platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (T), indium (In), tin (Sn), iron (Fe), cobalt (Co), molybdenum (Mo) or alloys containing such metal elements, conductive particles formed from those metals, conductive particles of alloys containing those metals, polycrystalline silicon containing impurities, carbon-based materials, oxide semiconductor materials, carbon nanotubes, and graphene may be used, and further, a stacked structure of layers containing these elements may also be used.Organic materials (conductive polymers) such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid [PEDOT / PSS] can also be used as materials for configuring an anode or cathode. Such conductive materials can also be used as electrodes by mixing them into a binder (polymer) to form a paste or ink, and then curing the paste or ink.

[0070] As the film formation method of the first electrode, etc., and the second electrode (anode and cathode), a dry process or a wet process can be used. Physical vapor deposition (PVD) and chemical vapor deposition (CVD) can be used as the dry process. As the film formation method utilizing the principle of the PVD process, vapor deposition using resistance heating or high-frequency heating, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF-DC combined bias sputtering, ECR sputtering, opposing target sputtering, and high-frequency sputtering), ion plating, laser ablation, molecular beam epitaxy, and laser transfer can be used.Furthermore, plasma CVD, thermal CVD, metal organic (MO) CVD, and optical CVD can be used as the CVD method. On the other hand, wet-type methods can be used such as electroplating or electroless plating, spin coating, inkjet coating, spray coating, stamping, microcontact printing, flexographic printing, offset printing, gravure printing, and dipping. Patterning methods can include chemical etching such as shadow masking, laser transfer, or photolithography, physical etching under ultraviolet rays or laser, and so on.As the planarization technology for the first electrode and so on or the second electrode, a laser planarization method, a reflow method, a CMP (chemical mechanical polishing) method, and so on can be used.

[0071] As a material for configuring insulating layers, various interlayer insulating layers and insulating films, not only inorganic insulating materials substituted by silicon oxide materials, silicon nitride (SiN Y) and high dielectric constant insulating materials made of metal oxides such as alumina (Al2O3) are exemplified, but also polymethyl methacrylate (PMMA); polyvinylphenol (PVP); polyvinyl alcohol (PVA); polyimide; polycarbonate (PC), polyethylene terephthalate (PET); polystyrene; silanol derivatives (silane coupling agents) such as N-2-(aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptpropyltrimethoxysilane (MPTMS), or octadecyltrichlorosilane (OTS); novolac-type phenolic resins; fluororesins; and organic insulating materials (organic polymers) exemplified by linear hydrocarbons having functional groups that can be attached to the control electrode at one end thereof, such as octadecanethiol or dodecyl isocyanate, and combinations of them can also be used. It is particularly worth mentioning that silicon oxide materials include silicon oxide (SiO x), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin-on glass) and low dielectric constant materials (for example, polyallyl ether, cycloperfluorocarbon polymer and benzocyclobutene, cyclic fluororesin, polytetrafluoroethylene, aryl fluoride ether, polyimide fluoride, amorphous carbon and organic SOG) can be exemplified.

[0072] The configuration and structure of the floating diffusion layer and the amplification transistor, reset transistor, and select transistor constituting the control region can be designed similarly to the configuration and structure of a conventional floating diffusion layer, amplification transistor, reset transistor, and select transistor. The drive circuit can also have a well-known configuration structure.

[0073] Although the first electrode is connected to the floating diffusion layer and the gate region of the amplification transistor, it is sufficient if a contact hole region is formed for connecting the first electrode to the floating diffusion layer and the gate region of the amplification transistor. Examples of materials for configuring the contact hole region include impurity-doped polysilicon, high-melting-point metals, and metal silicides such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi2, MoSi2, and so on, as well as stacked structures (e.g., Ti / TiN / W) of layers composed of such materials.

[0074] A first carrier blocking layer may be provided between the organic photoelectric conversion layer and the first electrode, and a second carrier blocking layer may be provided between the organic photoelectric conversion layer and the second electrode. Further, a first charge injection layer may be provided between the first carrier blocking layer and the first electrode, and a second charge injection layer may be provided between the second carrier blocking layer and the second electrode. For example, as the material for forming the charge injection layer, alkali metals such as lithium (Li), sodium (Na), or potassium (K), and their fluorides and oxides, and alkaline earth metals such as magnesium (Mg) or calcium (Ca), and their fluorides and oxides, for example, can be used.

[0075] A dry film formation method and a wet film formation method can be used as the film formation method for various organic layers. A vacuum deposition method using resistance heating, high-frequency heating, or electron beam heating, a flash deposition method, a plasma deposition method, an EB deposition method, various sputtering methods (a 2-pole sputtering method, a DC sputtering method, a DC magnetron sputtering, a high-frequency sputtering method, a magnetron sputtering method, an RF-DC coupled bias sputtering method, an ECR sputtering method, an opposed target sputtering method, a high-frequency sputtering method, and an ion beam sputtering method), a DC (direct current) method, an RF method, a multi-cathode method, an activation reaction method, and an electric field deposition method can be used as the dry film formation method.Various ion plating methods such as high-frequency ion plating and reactive ion plating, laser ablation, laser transfer, and molecular beam epitaxy (MBE) can be used. Meanwhile, as the CVD method, plasma CVD, thermal CVD, MOCVD, and optical CVD can be used. On the other hand, as the wet-type method, spin coating, immersion coating, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, or flexographic printing can be used. A stamping method, a spraying method, and various coating methods such as air-doctor coating can be used.A blade coating process, a rod coating process, a knife coating process, a squeeze coating process, a reverse roll coating process, a transfer roll coating process, a gravure coating process, a kiss coating process, a cast coating process, a spray coating process, a slot-opening coating process, or a calender coating process can be cited as examples. It is particularly noteworthy that non-polar or low-polar organic solvents such as toluene, chloroform, hexane, or ethanol can be cited as solvents in the coating process. The structuring process can include chemical etching such as shadow masking, laser transfer, or photolithography, physical etching with ultraviolet rays,a laser or the like, etc. As a planarization method for the various organic layers, a laser planarization method, a reflow method, etc. can be used.

[0076] Two or more of the imaging devices of the first configuration to the sixth configuration including the preferred embodiments and configurations described above may be appropriately combined as desired.

[0077] In each of the imaging devices or solid-state image sensors, an on-chip microlens or a shading layer as described above may be provided, as required by the circumstances, and a drive circuit and wiring for driving the imaging devices may be provided. As required by the circumstances, a diaphragm for controlling light incidence on the imaging device may be arranged, or an optical cut filter may be provided according to a purpose of the solid-state image sensor.

[0078] For example, if a solid-state image sensor with a readout integrated circuit (ROIC) is to be stacked by placing a drive substrate on which a readout integrated circuit and a connection region made of copper (Cu) are formed, and an imaging device on which a connection region is formed on top of each other so that the connection regions contact each other and then connecting the connection regions to each other, they can be stacked, and it is also possible to connect the connection regions to each other by using solder bumps or the like.

[0079] Furthermore, a driving method for driving the solid-state image sensor according to any one of the first embodiment and the second embodiment of the present disclosure may be a driving method for a solid-state image sensor that repeats the steps in which, while charge is accumulated in photoelectric conversion layers, the charge in first electrodes in all imaging devices is discharged at once and then the charge accumulated in the photoelectric conversion layers is transferred at once to the first electrodes in all imaging devices, and after completion of the transfer, the charge transferred to the first electrodes is sequentially read out in the imaging devices.

[0080] In such a driving method for a solid-state image sensor as described above, since each imaging device is structured so that incident light from the second electrode side does not fall on the first electrode, and while charge is accumulated in the photoelectric conversion layers, the charge in the first electrodes in all imaging devices is discharged from the system at once, resetting of the first electrode in all imaging devices can be securely performed simultaneously. Furthermore, thereafter, the charge accumulated in the photoelectric conversion layer is transferred to all imaging devices at once, and after the transfer is completed, the charge transferred to the first electrode in each imaging device is sequentially read out. Therefore, what is commonly called a global aperture function can be easily realized. Working example 1

[0081] Working Example 1 relates to an imaging device of the present disclosure and a solid-state image sensor according to the second embodiment of the present disclosure. An arrangement state of a charge accumulating electrode, a first insulating electrode, a second insulating electrode, and a first electrode in the solid-state image sensor of Working Example 1 is shown in Fig. 1 is schematically shown. Furthermore, a schematic partial sectional view of the imaging device and the stacked type imaging device of Working Example 1 is shown in Fig. 8, and equivalent circuits of the imaging device and the stacked type imaging device of Working Example 1 are shown in each of the Fig. 9 and Fig. 10. It is particularly worth mentioning that Fig. 8 one along a Fig.1. It should be noted that, in order to simplify the drawings, various components of the imaging device positioned beneath an interlayer insulating layer are sometimes referred to collectively by reference numeral 91 for the sake of convenience. Fig. 1 a control circuit (where a value V ES-1 is set) is added to an imaging device, and another drive circuit (where the value V ES-1 into another value V ES-1 ' changes) is added to a different imaging device.

[0082] The imaging device (photoelectric conversion device) 11 of Working Example 1 includes a first electrode 21, a charge accumulating electrode 24 arranged at a distance from the first electrode 21, an insulating electrode 30 arranged at a distance from the first electrode 21 and the charge accumulating electrode 24 and surrounding the charge accumulating electrode 24, a photoelectric conversion layer 23 formed in contact with the first electrode 21 and above the charge accumulating electrode 24 with an insulating layer 82 disposed therebetween, and a second electrode 22 formed on the photoelectric conversion layer 23, wherein the insulation electrode 30 comprises a first insulation electrode 31A and a second insulation electrode 31B arranged at a distance from the first insulation electrode 31A, and the first insulating electrode 31A is positioned between the first electrode 21 and the second insulating electrode 31B.

[0083] Furthermore, the solid-state image sensor of Working Example 1 includes a stacked-type imaging device including at least one imaging device 11 of Working Example 1. Specifically, at least one lower imaging device 13 or 15 is provided below the imaging device 11 of Working Example 1, and the wavelength of light received by the imaging device 11 and the wavelength of light received by the lower imaging device 13 or 15 are different from each other. In this case, two lower imaging devices 13 and 15 are stacked.

[0084] The second electrode 22 positioned on the light incident side is provided in common for a plurality of imaging devices 11, except for the imaging device of Working Example 3 described below. Specifically, the second electrode 22 is what is generally referred to as a fixed electrode. The photoelectric conversion layer 23 is provided in common for the plurality of imaging devices 11. In other words, a single photoelectric conversion layer 23 is formed for the plurality of imaging devices 11.

[0085] The stacked-type imaging device of Working Example 1 includes at least one of the imaging device 11 of Working Example 1 or an imaging device of Working Example 3 described hereinafter (specifically, in Working Example 1, the stacked-type imaging device includes an imaging device 11 of Working Example 1 or an imaging device 11 of Working Example 3 described hereinafter).

[0086] The first insulating electrode 31A and the second insulating electrode 31B are provided in a region opposite to a region of the photoelectric conversion layer 23 positioned between adjacent ones of the imaging devices 11, with an insulating layer 82 interposed therebetween. Specifically, the first insulating electrode 31A and the second insulating electrode 31B are a lower first insulating electrode and a lower second insulating electrode, respectively. Although the first insulating electrode 31A and the second insulating electrode 31B are formed in a same plane as that of the first electrode 21 or the charge accumulating electrode 24, they may be formed in different planes.

[0087] The stacked-type imaging device of Working Example 1 further includes a control section provided on a semiconductor substrate and including a drive circuit, and the first electrode 21, the second electrode 22, the charge accumulating electrode 24, the first insulation electrode 31A, and the second insulation electrode 31B are connected to the drive circuit. Wiring connected to the second insulation electrode 31B is appropriately provided in common for a plurality of imaging devices so that the second insulation electrode 31B is controlled simultaneously for the plurality of imaging devices. Alternatively, the second insulation electrode 31B is appropriately provided in common for a plurality of imaging devices so that the second insulation electrode 31B is controlled simultaneously for the plurality of imaging devices.On the other hand, the first isolation electrodes 31A in the imaging devices are controlled separately from each other.

[0088] For example, the first electrode 21 is brought to a positive potential while the second electrode 22 is brought to a negative potential, so that electrons generated by photoelectric conversion through the photoelectric conversion layer 23 are read out into a first floating diffusion layer FD1. This applies similarly to other working examples. It is particularly noteworthy that in an embodiment in which the first electrode 21 is brought to a negative potential while the second electrode 22 is brought to a positive potential, so that positive holes generated by photoelectric conversion through the photoelectric conversion layer 23 are read out into the first floating diffusion layer FD1, it is sufficient if the high potential and the low potential described below are interchanged.

[0089] During operation of the imaging device 11, that is, during a charge accumulation period, a reset operation period, and a charge transfer period, the potential of the first insulation electrode 31A has a fixed value V ES-1 and the potential of the second insulation electrode 31B also has a fixed value V ES-2 Alternatively, the potential of the first insulation electrode 31A changes from the fixed value V ES-1 to another value V ES-1 ', while the potential of the second insulation electrode 31B remains at the fixed value V ES-2 Specifically, during a charge accumulation period and a reset operation period, the potential of the first insulation electrode 31A has the fixed value V ES-1 , and during a charge transfer period, the potential of the first insulation electrode 31A has the value V ES-1 ' [V ES-1 ' > V ES-1 or (V 32 - V ES-1 ') < (V31 - V ES-1 )]). On the other hand, during a charge accumulation period, a reset operation period, and a charge transfer period, the potential of the second insulation electrode 31B has the fixed value V ES-2 . In those cases, V ES-1 > V ES-2 fulfilled or is otherwise V ES-2 = V ES-1 fulfilled.

[0090] It is particularly noteworthy that it is possible to obtain each potential to be applied to different electrodes from a single power supply by controlling the voltage using a resistor or the like, and even in a case where a device (for example, an operational amplifier) ​​that controls the level of an appropriate potential is used, it is possible to obtain each potential to be applied to different electrodes from a single power supply.

[0091] Furthermore, the imaging device 11 of the working example 1 further comprises a control area provided on a semiconductor substrate 70 and containing a drive circuit, wherein the first electrode 21 and the charge accumulating electrode 24 are connected to the drive circuit, during a charge accumulation period from the control circuit a potential V 11 is applied to the first electrode 21, a potential V 31 is applied to the charge accumulating electrode 24 and charge is accumulated in the photoelectric conversion layer 23, during a charge transfer period from the control circuit a potential V 12 is applied to the first electrode 21, a potential V 32is applied to the charge accumulating electrode 24 and the charge accumulated in the photoelectric conversion layer 23 is read out into the control region via the first electrode 21. However, since the potential of the first electrode 21 is set higher than the potential of the second electrode 22, V31≥V11 and V32 <V12 fulfilled.

[0092] In the following, the operation of the solid-state image sensor of Working Example 1 will be described with reference to Fig. 2A, Fig. 2B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B, Fig. 5A, Fig. 5B, Fig. 5C, Fig. 6A and Fig. 6B; the readout method is a first-mode readout method. It is particularly noteworthy that in the figures described above, the potential is indicated by a height in the vertical direction, and the potential becomes higher as the height decreases. <ladungsakkumulierungsperiode>

[0093] In particular, during a charge accumulation period, the drive circuit generates the potential V 11 applied to the first electrode 21, the potential V 31 applied to the charge accumulating electrode 24, the potential V ES-1 applied to the first insulation electrode 31A and the potential V ES-2 to the second insulation electrode 31B. Furthermore, the potential V 21 applied to the second electrode 22. Thus, charge (electrons schematically represented by black dots) is accumulated in the photoelectric conversion layer 23. A charge accumulation state immediately before an end of a charge accumulation period is shown in Fig. 2A or Fig. 5A. Electrons generated by photoelectric conversion are attracted to the charge accumulating electrode 24 and remain in a region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24. In other words, charge is accumulated in the photoelectric conversion layer 23. Since V 31 > V 11 holds, electrons generated within the photoelectric conversion layer 23 do not move toward the first electrode 21. Since the potential V31 of the charge accumulating electrode 24 is higher than the potential V ES-1 the first insulation electrode 31A and the potential V ES-2 the second insulating electrode 31B, electrons generated inside the photoelectric conversion layer 23 also do not move toward the first insulating electrode 31A and the second insulating electrode 31B. In other words, a flow of charge generated by photoelectric conversion into an adjacent imaging device 11 can be reduced. As the time of photoelectric conversion elapses, the potential in the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 has an increasingly negative value. In a later stage of the charge accumulation period, a reset operation is performed. Consequently, the potential of the first floating diffusion layer FD1 is reset, and the potential (V FD ) of the first floating diffusion layer FD1 the potential V DD the power supply.

[0094] In the Fig. The example shown in Figure 2A is V ES-1 > V ES-2 fulfilled, and in the Fig. The example shown in Figure 5A is V ES-1 = V ES-2 fulfilled. <Ladungsübertragungsperiode>

[0095] After the reset operation is completed, a charge transfer period begins. During the charge transfer period, a potential V 12 applied to the first electrode 21, the potential V 32 applied to the charge accumulating electrode 24, the potential V ES-1 or the potential V ES-1 ' is applied to the first insulation electrode 31A and the potential V ES-2 to the second insulation electrode 31B. Furthermore, a potential V 22 applied to the second electrode 22. Consequently, the charge accumulated in the photoelectric conversion layer 23 of the imaging device 11 is read out. A charge accumulation state immediately before an end of the charge transfer period is shown in Fig. 2B, Fig. 3A, Fig. 3B, Fig. 4A, Fig. 4B, Fig. 5B, Fig. 5B, Fig. 6A and Fig. 6B. Specifically, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 are read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, the charge accumulated in the photoelectric conversion layer 23 is read out to the control region. Since the potential of the first insulating electrode 31A is lower than the potential of the first electrode 21 but higher than the potential of the charge accumulating electrode 24, electrons generated inside the photoelectric conversion layer 23 flow to the first electrode 21 but do not move toward the second insulating electrode 31B. In other words, a flow of charge generated by photoelectric conversion into an adjacent imaging device 11 can be reduced.

[0096] Here are in the Fig. Example shown in Figure 2B VFD>V12=VES−1>V32>VES−2 and V31>V32 In addition, the Fig. Example shown in Figure 3A VFD>V12>VES−1>V32>VES−2 and V31>V32 Furthermore, the Fig. Example shown in Figure 3B VFD>V12>VES−1'>V32>VES−2, VES−1'>VES−1 and V31>V32 Furthermore, the Fig. Example shown in Figure 4A VFD>V12=VES−1'>V32(=V31)>VES−2 and VES−1'>VES−1 Furthermore, the Fig. Example shown in Figure 4B VFD>V12>VES−1'>V32>VES−2, VES−1'>VES−1 and V31>V32 fulfilled.

[0097] However, in the Fig. Example shown in Figure 5B VFD>V12=VES−1'>V32(=V31)>VES−2 Furthermore, the Fig. Example shown in Figure 5C VFD>V12=VES−1'>V32(=V31)>VES−2 Furthermore, the Fig. Example shown in Figure 6A VFD>V12(=V11)=VES−1'>V32>VES−2 and V31>V32 Furthermore, the Fig. Example shown in Figure 6B VFD>V12(=V11)=VES−1'>V32>VES−2 and V31>V32 fulfilled.

[0098] Such an operation sequence of charge accumulation, reset operation and charge transfer as described above is thus completed.

[0099] An operation of an amplifying transistor TR1 amp and that of a selection transistor TR1 sel The operation of the second imaging device 13 and the third imaging device 15 after electrons are read into the first floating diffusion layer FD1 is the same as the operation of such conventional transistors. The operation sequence of charge accumulation, reset, and charge transfer of the second imaging device 13 and the third imaging device 15 is similar to the conventional operation sequence of charge accumulation, reset, and charge transfer. Reset noise of the first floating diffusion layer FD1 can be removed through a correlated double sampling (CDS) process, similar to the past.

[0100] As described above, in the imaging device or solid-state image sensor of Working Example 1, since the isolation electrode includes the first isolation electrode and the second isolation electrode spaced apart from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode, during operation of the imaging device, movement of charge between adjacent imaging devices can be reliably reduced under the control of the first isolation electrode and the second isolation electrode. In addition, the charge accumulated in the photoelectric conversion layer can be smoothly transferred to the first electrode.Furthermore, an improvement in the saturation charge amount in which the saturation charge amount does not decrease and a balance between a reduction of a residual charge upon charge transfer and a reduction in the occurrence of blooming can be achieved, and no deterioration in quality occurs in a recorded video (image).

[0101] A view in which a part of the electrodes is enlarged to illustrate a positional relationship of the electrodes in the imaging apparatus of Working Example 1 is shown in Fig. 7A. Meanwhile, a view in which a part of the electrodes is enlarged to illustrate a positional relationship of the electrodes in an imaging device in which the first insulation electrode 31A is not provided is shown in Fig. 7B. In the Fig. 7B is during a charge transfer period V 12 > V 32 > V ES-2 Accordingly, the change in potential in a region sandwiched by the first electrode 21 and the charge accumulating electrode 24 (in Fig. 7A and Fig. 7B by a "region A") as a result of a simulation such that it decreases once from the charge accumulating electrode 24 toward the region A and then increases from the region A toward the first electrode 21. In other words, a potential barrier (if viewed from electrons, a "potential hill") is created in the region A, over which electrons cannot pass. Accordingly, there is a possibility that electrons cannot move smoothly from the charge accumulating electrode 24 to the first electrode 21. On the other hand, in the Fig. 7A during a charge transfer period, the relationship V 12 > V ES-1 > V 32 > V ES-2 or V 12 > V ES-1 ' > V 32 > V ES-2 Accordingly, as a result of simulation, a result is obtained that the change in potential in the region A sandwiched between the first electrode 21 and the charge accumulating electrode 24 is a change that smoothly increases from the charge accumulating electrode 24 to the region A and the first electrode 21. Accordingly, during operation of the imaging device, movement of charge (electrons) between adjacent imaging devices can be surely reduced. Furthermore, a charge accumulated in the photoelectric conversion layer 23 can be smoothly transferred to the first electrode 21, and a captured video (image) suffers no deterioration.

[0102] Furthermore, in the imaging device of Working Example 1 or any of Working Examples 2 to 13, since the charge accumulating electrode is provided spaced apart from the first electrode and disposed opposite the photoelectric conversion layer with the insulating layer interposed therebetween, when light is applied to the photoelectric conversion region and photoelectrically converted by the photoelectric conversion region, a type of capacitor is formed from the photoelectric conversion layer, the insulating layer, and the charge accumulating electrode, and charge can be stored in the photoelectric conversion layer. Therefore, at the time of starting exposure, it is possible to completely empty the charge accumulating region and erase the charge.As a result, the occurrence of such a phenomenon as high kTC noise and aggravated random noise, leading to deterioration of the image quality, can be reduced. Furthermore, since all pixels can be reset at once, what is commonly referred to as the global aperture function can be realized.

[0103] In the imaging device 11 of Working Example 1, the first insulating electrode 31A and the second insulating electrode 31B are formed in a region corresponding to the region 23' of the photoelectric conversion layer 23 positioned between adjacent imaging devices 11 with the insulating layer 82 interposed therebetween. Note that the first insulating electrode 31A and the second insulating electrode 31B are sometimes referred to collectively as "insulating electrode 30." In other words, an insulating electrode 30 is formed under a portion 82' of the insulating layer 82 in the region sandwiched between one charge accumulating electrode 24 and another charge accumulating electrode 24, which respectively constitute adjacent imaging devices.The insulating electrode 30 is provided at a distance from the charge accumulating electrode 24 and is also provided at a distance from the first electrode 21. Alternatively, in other words, the insulating electrode 30 is provided at a distance from the charge accumulating electrode 24 and is arranged opposite the region 23' of the photoelectric conversion layer with the insulating layer 82 interposed therebetween.

[0104] To an imaging device with respect to which the insulation electrode 30 as well as a connection hole 34, a pad area 33 and a wiring V OB described hereinafter are not shown, for convenience of description, it is referred to as "imaging apparatus having the basic structure of the present disclosure". Fig. 8 is a schematic partial sectional view of the imaging device having the basic structure of the present disclosure, and Fig. 16A, Fig. 16B, Fig. 17A, Fig. 17B, Fig. 18, Fig. 19, Fig. 20, Fig. 21, Fig. 22, Fig. 23, Fig. 26, Fig. 30, Fig. 33, Fig. 34, Fig. 37, Fig. 39, Fig. 40, Fig. 42, Fig. 43, Fig. 44, Fig. 45, Fig. 46 and Fig. 47 are schematic partial sectional views of various modifications of the imaging device having the basic structure of the present disclosure shown in Fig. 8. In the figure, an illustration of the insulation electrodes and so on is omitted.

[0105] The imaging device 11 of Working Example 1 further includes a semiconductor substrate (specifically, a silicon semiconductor layer) 70, and the photoelectric conversion section is arranged above the semiconductor substrate 70. The imaging device 11 of Working Example 1 further includes a control section provided on the semiconductor substrate 70 and including a drive circuit to which the first electrode 21, the second electrode 22, the charge accumulating electrode 24, and the insulation electrode 30 are connected. Here, the light incident surface of the semiconductor substrate 70 is the upper side, and the opposite side of the semiconductor substrate 70 is the lower side. A wiring layer 62 containing more than one wiring is provided below the semiconductor substrate 70.

[0106] On the semiconductor substrate 70, at least one floating diffusion layer FD1 and one amplification transistor TR1 amp which form the control region, and the first electrode 21 is connected to the floating diffusion layer FD1 and the gate region of the amplification transistor TR1 amp On the semiconductor substrate 70, a reset transistor TR1 rst and a selection transistor TR1 sel , which form the control area. The floating diffusion layer FD1 is connected to one of the source / drain regions of the reset transistor TR1 rst connected, and the other of the source / drain regions of the amplifying transistor TR1 amp is connected to one of the source / drain regions of the selection transistor TR1 sel while the other of the source / drain regions of the selection transistor TR1 sel connected to a signal line VSL1. The amplification transistor TR1 amp , the reset transistor TR1 rst and the selection transistor TR1 sel form the control circuit.

[0107] In the illustrated example, a state is illustrated in which the floating diffusion layer FD1 and so on are provided for one imaging device 11; but in Working Example 2 described hereinafter, the floating diffusion layer FD1 and so on are shared by four imaging devices 11.

[0108] Specifically, the stacked-type imaging device and the stacked-type imaging device of Working Example 1 are a back-illuminated type imaging device and are structured such that three imaging devices 11, 13, and 15 are stacked, including a first-type green light imaging device (hereinafter referred to as a "first imaging device") of Working Example 1 having a sensitivity to green light and including a first-type green light photoelectric conversion layer that absorbs green light, a second-type blue light imaging device (hereinafter referred to as a "second imaging device") having a sensitivity to blue light and including a blue light photoelectric conversion layer that absorbs blue light,and a conventional second-type red light imaging device (hereinafter referred to as a "third imaging device") having red light sensitivity and including a second-type red light photoelectric conversion layer that absorbs red light. The red light imaging device (third imaging device) 15 and the blue light imaging device (second imaging device) 13 are provided in the semiconductor substrate 70 such that the second imaging device 13 is positioned on the light incident side with respect to the third imaging device 15. Meanwhile, the green light imaging device (first imaging device) 11 is provided above the blue light imaging device (second imaging device) 13. One pixel is formed by a stacked structure of the first imaging device 11,the second imaging device 13 and the third imaging device 15. No color filter is provided.

[0109] In the first imaging device 11, the first electrode 21 and the charge accumulating electrode 24 are formed at a distance from each other on an interlayer insulating layer 81. Further, the insulating electrode 30 is formed at a distance from the charge accumulating electrode 24 on the interlayer insulating layer 81. The interlayer insulating layer 81, the charge accumulating electrode 24, and the insulating layer 30 are covered with the insulating layer 82. The photoelectric conversion layer 23 is formed on the insulating layer 82, and the second electrode 22 is formed on the photoelectric conversion layer 23. A protective layer 83 is formed over an entire area including the second electrode 22, and an on-chip microlens 90 is provided on the protective layer 83.The first electrode 21, the charge-accumulating electrode 24, the insulating electrode 30, and the second electrode 22 include, for example, a transparent electrode made of ITO (work function: approximately 4.4 eV). The photoelectric conversion layer 23 includes a layer containing a known organic photoelectric conversion material having at least green light sensitivity (for example, a rhodamine dye, a melacianin pigment, or an organic material such as quinacridone). Furthermore, the photoelectric conversion layer 23 may be configured to further include a material layer capable of charge accumulation. In other words, the material layer capable of charge accumulation may be further formed between the photoelectric conversion layer 23 and the first electrode 21 (for example, in a connection region 67).The interlayer insulating layer 81, the insulating layer 82, and the protective layer 83 are formed of a known insulating material (for example, SiO2 or SiN). The photoelectric conversion layer 23 and the first electrode 21 are connected to each other by a connecting region 67 provided on the insulating layer 82. The photoelectric conversion layer 23 extends in the connecting region 67. Specifically, the photoelectric conversion layer 23 extends into an opening 84 provided in the insulating layer 82 and is connected to the first electrode 21.

[0110] The charge accumulating electrode 24 is connected to the drive circuit. Specifically, the charge accumulating electrode 24 is connected to the drive circuit via a connection hole 66 provided in the interlayer insulating layer 81, a pad region 64, and a wiring V OA connected to a vertical drive circuit 112, which forms the drive circuit.

[0111] The insulation electrode 30 is also connected to the drive circuit. Specifically, the insulation electrode 30 is connected to the vertical drive circuit 112, which forms the drive circuit, via the connection hole 34 provided in the interlayer insulation layer 81, the pad region 33, and the wiring V OB connected. Specifically, the insulating electrode 30 is formed in a region (insulating layer region 82') opposite to the region 23' of the photoelectric conversion layer 23, with the insulating layer 82 interposed therebetween. In other words, the insulating electrode 30 is provided under the region 82' of the insulating layer 82 in a region sandwiched by the charge accumulating electrode 24 and another charge accumulating electrode 24, each constituting adjacent imaging devices. The insulating electrode 30 is provided at a distance from the charge accumulating electrode 24. Alternatively, in other words, the insulating electrode 30 is provided at a distance from the charge accumulating electrode 24, and the insulating electrode 30 is disposed opposite the region 23' of the photoelectric conversion layer 23 with the insulating layer 82 interposed therebetween.

[0112] The size of the charge accumulating electrode 24 is larger than that of the first electrode 21. When the area of ​​the charge accumulating electrode 24 is represented by s1' and the area of ​​the first electrode 21 is represented by s1, it is preferable, although not limiting, 4≤s1' / s1 to fulfill, and in the imaging device of Working Example 1 or any of the working examples described hereinafter, although not limiting, for example s1' / s1=8 It is particularly noteworthy that in Working Examples 7 to 10 described hereinafter, the sizes of the three segments 201, 202, and 203 of a photoelectric conversion region are made equal to each other and formed to have identical planar shapes.

[0113] A device isolation region 71 is formed on one side of a first surface (front surface) 70A of the semiconductor substrate 70, and further, an oxide film 72 is formed on the first surface 70A of the semiconductor substrate 70. Moreover, the reset transistor TR1 rst , the amplifying transistor TR1 amp and the selection transistor TR1 sel, which form the control region of the first imaging device 11 are provided on the first surface side of the semiconductor substrate 70, and further the first floating diffusion layer FD1 is provided.

[0114] The reset transistor TR1 rst contains the gate region 51, a channel formation region 51A and source / drain regions 51B and 51C. The gate region 51 of the reset transistor TR1 rst is connected to a reset line RST1, and a source / drain region 51C of the reset transistor TR1 rst also serves as the first floating diffusion layer FD1, and the other source / drain region 51B is connected to the power supply V DD tied together.

[0115] The first electrode 21 is connected to the one source / drain region 51C (the first floating diffusion layer FD1) of the reset transistor TR1 via a connection hole 65 provided in the interlayer insulating layer 81, a pad region 63, a contact hole region 61 formed in the semiconductor substrate 70 and the interlayer insulating layer 76, and the wiring layer 62 formed on the interlayer insulating layer 76. rst tied together.

[0116] The amplifying transistor TR1 amp includes a gate region 52, a channel formation region 52A and source / drain regions 52B and 52C. The gate region 52 is connected via the wiring layer 62 to the first electrode 21 and the one source / drain region 51C (the first floating diffusion layer FD1) of the reset transistor TR1 rst Meanwhile, a source / drain region 52B is connected to the power supply V DD tied together.

[0117] The selection transistor TR1 sel includes a gate region 53, a channel formation region 53A, and source / drain regions 53B and 53C. The gate region 53 is connected to a selection line SEL1. Furthermore, a source / drain region 53B shares a region with the other source / drain region 53C, which forms the amplification transistor TR1. amp and the other source / drain region 53C is connected to the signal line (data output line) VSL1 (117).

[0118] The second imaging device 13 includes an n-type semiconductor region 41 as a photoelectric conversion layer provided on the semiconductor substrate 70. A gate region 45 of a transfer transistor TR2 trs , which includes a vertical transistor, extends to the n-type semiconductor region 41 and is connected to a transfer gate line TG2. Furthermore, a second floating diffusion layer FD2 is formed in a region 45C of the semiconductor substrate 70 near the gate region 45 of the transfer transistor TR2. trs Charge accumulated in the n-type semiconductor region 41 is read out to the second floating diffusion layer FD2 via a transfer channel formed along the gate region 45.

[0119] In the second imaging device 13, a reset transistor TR2 rst , an amplifying transistor TR2 amp and a selection transistor TR2 sel , which form a control region of the second imaging device 13, are provided on the side of the first surface of the semiconductor substrate 70.

[0120] The reset transistor TR2 rst contains a gate region, a channel formation region, and source / drain regions. The gate region of the reset transistor TR2 rst is connected to a reset line RST2, and one of the source / drain regions of the reset transistor TR2 rst is connected to the power supply V DD while the other of the source / drain regions also serves as the second floating diffusion layer FD2.

[0121] The amplifying transistor TR2 amp contains a gate region, a channel formation region, and source / drain regions. The gate region is connected to the other of the source / drain regions (the second floating diffusion layer FD2) of the reset transistor TR2 rst connected. Meanwhile, this is one of the source / drain regions of the amplification transistor TR2 amp with the power supply V DD tied together.

[0122] The selection transistor TR2 sel contains a gate region, a channel formation region, and source / drain regions. The gate region is connected to a selection line SEL2. Meanwhile, one of the source / drain regions shares a region with the other of the source / drain regions, which forms the amplification transistor TR2. amp and the other of the source / drain regions of the selection transistor TR2 sel is connected to a signal line (data output line) VSL2.

[0123] The third imaging device 15 includes an n-type semiconductor region 43 as a photoelectric conversion layer provided in the semiconductor substrate 70. A gate region 46 of a transfer transistor TR3 trs is connected to a transfer gate line TG3. Furthermore, a third floating diffusion layer FD3 is formed in a region 46C of the semiconductor substrate 70 near the gate region 46 of the transfer transistor TR3. trs Charge accumulated in the n-type semiconductor region 43 is read out to the third floating diffusion layer FD3 via a transfer channel 46A formed along the gate region 46.

[0124] In the third imaging device 15, a reset transistor TR3 rst , an amplifying transistor TR3 amp and a selection transistor TR3 sel , which form a control region of the third imaging device 15, are provided on the side of the first surface of the semiconductor substrate 70.

[0125] The reset transistor TR3 rst contains a gate region, a channel formation region, and source / drain regions. The gate region of the reset transistor TR3 rst is connected to a reset line RST3, and one of the source / drain regions of the reset transistor TR3 rst is connected to the power supply V DD while the other of the source / drain regions also serves as the third floating diffusion layer FD3.

[0126] The amplifying transistor TR3 amp contains a gate region, a channel formation region, and source / drain regions. The gate region is connected to the other of the source / drain regions (the third floating diffusion layer FD3) of the reset transistor TR3 rst connected. Meanwhile, this is one of the source / drain regions of the amplification transistor TR3 amp with the power supply V DD tied together.

[0127] The selection transistor TR3 sel contains a gate region, a channel formation region, and source / drain regions. The gate region is connected to a select line SEL3. Meanwhile, one of the source / drain regions of the select transistor TR3 shares sel one region with the other of the source / drain regions, which the amplification transistor TR3 amp and the other of the source / drain regions of the selection transistor TR3 sel is connected to a signal line (data output line) VSL3.

[0128] The reset lines RST1, RST2 and RST3, the select lines SEL1, SEL2 and SEL3 and the transfer gate lines TG2 and TG3 are connected to the vertical drive circuit 112 constituting a drive circuit, and the signal lines (data output lines) VSL1, VSL2 and VSL3 are connected to a column signal processing circuit 113 constituting a drive circuit.

[0129] A p + -Layer 44 is provided between the n-type semiconductor region 43 and the surface 70A of the semiconductor substrate 70 and reduces the generation of dark current. Another p + -layer 42 is formed between the n-type semiconductor region 41 and the n-type semiconductor region 43, and further, a part of a side surface of the n-type semiconductor region 43 is separated from the p + -Layer 42. Another p + -layer 73 is formed on the back surface 70B side of the semiconductor substrate 70, and an HfO2 film 74 and an insulating film 75 are formed from the p + Layer 73 is formed up to a region where a contact hole region 61 is to be formed inside the semiconductor substrate 70. Although wiring is formed in the interlayer insulating layer 76 through a plurality of layers, illustration of such wiring is omitted.

[0130] The HfO2 film 74 is a film with a negative fixed charge, and generation of dark current can be reduced by providing such a film as just described.It is particularly worth mentioning that instead of an HfO2 film, it is also possible to use a film of aluminum oxide (Al2O3), a film of zirconium oxide (ZrO2), a film of tantalum oxide (Ta2O5), a film of titanium oxide (TiO2), a film of lanthanum oxide (La2O3), a film of praseodymium oxide (Pr2O3), a film of cerium oxide (CeO2), a film of neodymium oxide (Nd2O3), a film of promethium oxide (Pm2O3), a film of samarium oxide (Sm2O3), a film of europium oxide (Eu2O3), a film of gadolinium oxide (Gd2O3), a film of terbium oxide (Tb2O3), a film of dysprosium oxide (Dy2O3), a film of holmium oxide (Ho2O3), a film of thulium oxide (Tm2O3), a film of ytterbium oxide (Yb2O3), a film of lutetium oxide (Lu2O3), a film of yttrium oxide (Y2O3), a film of hafnium nitride, a film of aluminum nitride, a hafnium oxynitride and an aluminum oxynitride.As film formation processes of the mentioned films, for example, a CVD process, a PVD process and an ALD process can be listed.

[0131] Fig. 11 illustrates a conceptual diagram of the solid-state image sensor of Working Example 1. The solid-state image sensor 100 of Working Example 1 includes an imaging region 111 in which stacked-type imaging devices 101 are arranged in a two-dimensional array, and a vertical drive circuit 112, a column signal processing circuit 113, a horizontal drive circuit 114, an output circuit 115, a drive control circuit 116, and so on as drive circuits (peripheral circuits). Note that, of course, the circuits may include known circuits and may be configured using other circuit configurations (for example, various circuits used in a conventional CCD-type solid-state image sensor or a conventional MOS-type solid-state image sensor).It is particularly noted that the reference numeral "101" is used only for one row of the stacked type imaging devices 101 in . Fig. 11 is used.

[0132] The drive control circuit 116 generates a clock signal serving as a reference for the operation of the vertical drive circuit 112, the column signal processing circuit 113, and the horizontal drive circuit 114, and control signals therefor based on a vertical synchronizing signal, a horizontal synchronizing signal, and a master clock. The generated clock signal and control signals are then fed to the vertical drive circuit 112, the column signal processing circuit 113, and the horizontal drive circuit 114.

[0133] The vertical drive circuit 112 includes, for example, a shift register and performs selective scanning of the stacked-type imaging devices 101 of the imaging area 111 sequentially in a row in the vertical direction. Then, a pixel signal (image signal) based on a current (signal) generated by each stacked-type imaging device 101 according to the amount of light received is sent to the column signal processing circuit 113 via the signal line (data output line) 117 and a VSL.

[0134] The column signal processing circuit 113 is arranged, for example, for each column of the stacked-type imaging devices 101, and performs signal processing such as noise reduction and signal amplification for image signals output from the stacked-type imaging devices 101 for a row by using a signal from a black reference pixel (which, although not shown, is formed around the effective pixel area) for each imaging device. At the output stage of the column signal processing circuit 113, a horizontal selection switch (not shown) is provided in connection with a horizontal signal line 118.

[0135] The horizontal drive circuit 114 includes, for example, a shift register and sequentially outputs a horizontal scanning pulse to sequentially select the column signal processing circuits 113 so that a signal from each of the column signal processing circuits 113 is output to the horizontal signal line 118.

[0136] The output circuit 115 performs signal processing for signals sequentially provided from the column signal processing circuits 113 via the horizontal signal line 118 and outputs the resultant signal.

[0137] As in Fig. 12, which is an equivalent circuit diagram of a modification (Modification 1 of Working Example 1) of the imaging device and the stacked type imaging device of Working Example 1, the other source / drain region 51B of the reset transistor TR1 rst , instead of the power supply V DD to be connected, to be grounded.

[0138] The imaging device and the stacked-type imaging device of Working Example 1 can be manufactured, for example, by the following method. Specifically, an SOI substrate is first prepared. Then, a first silicon layer is formed on the surface of the SOI substrate by an epitaxial growth method, and a p + -layer 73 and an n-type semiconductor region 41 are formed on the first silicon layer. A second silicon layer is then formed on the first silicon layer by an epitaxial growth method, and a device isolation region 71, an oxide film 72, a p + -layer 42, an n-type semiconductor region 43 and a p + -layer 44 are formed on the second silicon layer. Further, various transistors and so on constituting control portions of imaging devices are formed on the second silicon layer, and a wiring layer 62, an interlayer insulating layer 76, and various types of wiring are further formed thereon, followed by the interlayer insulating layer 76 and a support substrate (not shown) being bonded together. Thereafter, the SOI substrate is removed to expose the first silicon layer. It is noted that the surface of the second silicon layer corresponds to a surface 70A of the semiconductor substrate 70, and the surface of the first silicon layer corresponds to a back surface 70B of the semiconductor substrate 70. Further, the first silicon layer and the second silicon layer are collectively represented as the semiconductor substrate 70.Then, on the back surface 70B side of the semiconductor substrate 70, an opening is formed for forming each contact hole region 61, and an HfO2 film 74, an insulating film 75, and a contact hole region 61 are formed. Further, pad regions 63, 64, and 33, an interlayer insulating layer 81, via holes 65, 66, and 34, first electrodes 21, charge accumulating electrodes 24, insulating electrodes 30, and an insulating layer 82 are formed. The connecting region 67 is then opened, and a photoelectric conversion layer 23, second electrodes 22, a protective layer 83, and on-chip microlenses 90 are formed. According to the foregoing, the imaging device and the stacked-type imaging device of Working Example 1 can be obtained.

[0139] Alternatively, although a schematic partial sectional view of a modification (Modification 2 of Working Example 1) of the imaging apparatus of Working Example 1 (two imaging apparatuses placed side by side are illustrated) in Fig. 13, the photoelectric conversion layer may be formed in a stacked structure of a semiconductor layer 23 DN a lower layer and a photoelectric conversion layer 23 UP an upper layer. The photoelectric conversion layer 23 UP an upper layer and the semiconductor layer 23 DN a lower layer can be provided jointly for a variety of imaging devices. In particular, in a variety of imaging devices, the photoelectric conversion layer 23 UP an upper layer and the semiconductor layer 23 DN a lower layer each in the form of a layer. By forming the semiconductor layer 23 DN By providing a lower layer in such a manner, for example, charge recombination upon charge accumulation can be prevented. Furthermore, the charge transfer efficiency of a charge accumulated in the photoelectric conversion layer 23 to the first electrode 21 can be increased. Furthermore, charge generated in the photoelectric conversion layer 23 can be temporarily retained, and the timing, etc., of charge transfer can be controlled. Furthermore, generation of dark current can be suppressed. Regarding the material for configuring the photoelectric conversion layer 23 UP an upper layer, it is sufficient if it is appropriately selected from various materials constituting the photoelectric conversion layer 23. On the other hand, it is preferable to use as the material for forming the semiconductor layer 23 DN a lower layer, a material having a high band gap energy value (for example, a band gap energy value equal to 3.0 eV or higher) and having a higher mobility than the material forming the photoelectric conversion layer, and in particular, for example, an oxide semiconductor material such as IGZO can be cited. As an alternative, as the material for forming the semiconductor layer 23 DN a lower layer in the case where a charge to be accumulated is electrons, a material with a higher ionization potential than that of the material forming the photoelectric conversion layer may be used. Otherwise, the impurity concentration of a material forming the semiconductor layer of a lower layer is preferably 1 × 10 18 cm -3 or less. It is particularly noteworthy that the configuration and structure of Modification 2 of Working Example 1 can be used for other working examples. Working example 2

[0140] Working Example 2 relates to a solid-state image sensor according to the first embodiment of the present disclosure. A charge accumulating electrode, a first insulating electrode, a second insulating electrode, and an arrangement state of the second insulating electrode and a first electrode in the solid-state image sensor of Working Example 2 are shown in Fig. 14 and Fig. 15. It is particularly noted that a schematic partial sectional view of the imaging device and the stacked type imaging device of Working Example 2 is substantially similar to that of Fig. 8 and are equivalent circuit diagrams of the imaging device and the stacked type imaging device of Working Example 2 substantially similar to those of Fig. 9 and Fig. 10 are. In Fig. 15 is a control circuit (where it detects a change in the value V ES-1 to the value V ES-1 ') is added to an imaging device block.

[0141] The solid-state image sensor of Working Example 2 contains a plurality of imaging device blocks 10 each containing P × Q (where P ≥ 2 and Q ≥ 1, in Working Example 2, P = 2 and Q = 2) imaging devices (photoelectric conversion devices), wherein P imaging devices are arranged in a first row and Q imaging devices are arranged in a second direction different from the first direction, wherein each imaging device 11 comprises a first electrode 21, a charge accumulating electrode 24 arranged at a distance from the first electrode 21, an insulating electrode 30 arranged at a distance from the first electrode 21 and the charge accumulating electrode 24 and surrounding the charge accumulating electrode 24, a photoelectric conversion layer 23 formed in contact with the first electrode 21 and with an insulating layer 82 disposed therebetween above the charge accumulating electrode 24, and a second electrode 22 formed on the photoelectric conversion layer 23, the insulating electrode 30 comprises a first insulating electrode 31A, a second insulating electrode 31B and a third insulating electrode 32, the first insulation electrode 31A is arranged adjacent to, but at a distance from, the first electrode 21 between imaging devices placed side by side in the imaging device block at least along the second direction, the second insulation electrode 31B is arranged between imaging devices in the imaging device block and the third insulation electrode 32 is arranged between imaging device blocks.

[0142] Further, in the solid-state image sensor of Working Example 2, the third isolation electrode 32 is shared by adjacent imaging device blocks.

[0143] As in Fig. 14 is further shown in the solid-state image sensor of Working Example 2 the first insulation electrode 31A is arranged adjacent to, but at a distance from, the first electrode 21 between imaging devices placed side by side along the second direction in the imaging device block, and The second insulation electrode 31B is arranged between imaging devices placed side by side along the first direction, and is arranged at a distance from the first insulation electrode 31A between imaging devices placed side by side along the second direction. In this case, further, the second insulation electrode 31B and the third insulation electrode 32 are connected to each other.

[0144] Otherwise, as in Fig. 15, in a modification of the solid-state image sensor of Working Example 2 the first insulation electrode 31A is arranged adjacent to, but at a distance from, the first electrode 21 between imaging devices arranged side by side along the second direction in the imaging device block, and is arranged adjacent to, but at a distance from, the first electrode 21 between imaging devices placed side by side along the first direction, and The second insulation electrode 31B is arranged at a distance from the first insulation electrode 31A between imaging devices placed side by side along the second direction, and is further arranged at a distance from the first insulation electrode 31A between imaging devices placed side by side along the first direction. In this case, the second insulation electrode 31B and the third insulation electrode 32 are further connected to each other.

[0145] The second isolation electrode 31B and the third isolation electrode 32 are appropriately shared by a plurality of imaging devices, and the second isolation electrode 31B and the third isolation electrode 32 are controlled simultaneously in the plurality of imaging devices. On the other hand, the first isolation electrodes 31A in the imaging devices are controlled separately. Depending on the form of driving the solid-state image sensor, sometimes the first isolation electrodes 31A in the imaging device block are controlled simultaneously in the plurality of imaging devices.

[0146] Also in the solid-state image sensor of Working Example 2, similarly to the one described above in connection with Working Example 1, the potential of the first insulation electrode 31A has the fixed value V ES-1 and the potential of the second insulation electrode 31B and that of the third insulation electrode 32 also have the fixed value V ES-1 or the potential of the first insulation electrode 31A changes from the fixed value V ES-1 (changes in particular to the fixed value V Es-1 '), while the potential of the second insulation electrode 31B and that of the third insulation electrode 32 have the fixed value V ES-2 Then |V ES-2 | > |V ES-1 | fulfilled or will |V ES-2 | = |V ES-1 | fulfilled.

[0147] The first insulating electrode 31A, the second insulating electrode 31B, and the third insulating electrode 32 are provided in a region opposite to the region of the photoelectric conversion layer 23 positioned between adjacent imaging devices 11, with the insulating layer 82 interposed therebetween. Specifically, the first insulating electrode 31A, the second insulating electrode 31B, and the third insulating electrode 32 are a lower first insulating electrode, a lower second insulating electrode, and a lower third insulating electrode, respectively. Although the first insulating electrode 31A, the second insulating electrode 31B, and the third insulating electrode 32 are formed in a same plane as that of the first electrode 21 or the charge accumulating electrode 24, they may otherwise be formed in different planes.

[0148] Furthermore, in the solid-state image sensor of Working Example 2, the first electrode 21 is shared by P×Q imaging devices constituting an imaging device block. Each imaging device block then includes a control region, the control region includes at least one floating diffusion layer and an amplification transistor, and the shared first electrode 21 is connected to the control region. This allows the configuration and structure in the pixel region in which a plurality of imaging devices are arranged in an array to be simplified and refined. P×Q imaging devices provided for a floating diffusion layer may include a plurality of first-type imaging devices, or may include at least one first-type imaging device and one or two or more second-type imaging devices described hereinafter.

[0149] Furthermore, the solid-state image sensor of Working Example 2 includes a stacked-type imaging device having at least one imaging device 11, which was described hereinabove in connection with Working Example 1. In such a solid-state image sensor of Working Example 2 as just described, a lower imaging device block of at least one layer (particularly two layers) is further provided below the plurality of imaging device blocks, the lower imaging device block contains a plurality of imaging devices (in particular, P × Q imaging devices, where P imaging devices are arranged along the first direction and Q imaging devices are arranged along the second direction) and The wavelength of light received by the imaging devices constituting the imaging device block and the wavelength of light received by the imaging devices constituting the lower imaging device block are different from each other. A plurality of (specifically, P × Q) imaging devices constituting the lower imaging device block include a shared floating diffusion layer. Furthermore, movement of charge accumulated in the photoelectric conversion layer 23 between imaging devices in adjacent imaging device blocks is inhibited under the control of the third isolation electrode 32.

[0150] Since an operation of the solid-state image sensor of Working Example 2 can be established substantially similarly to an operation of the solid-state image sensor of Working Example 1, although a detailed description is omitted, in the case where a readout method of the first mode in which a charge accumulated in four imaging devices is separately read out four times in total under the control of the isolation electrode 30, when three of the imaging devices are placed in a charge accumulation state while the remaining imaging device is being read out, each potential of the electrodes in the imaging device from which a charge is to be read out is set to V 12 > V ES-1 > V 32 > V ES-2 or V 12 > V ES-1 ' > V 32 > V ES-2 and any potential of the electrodes in the imaging devices from which charge is not to be read is set to V 12 > V 32 > V ES-1 > V ES-2 or V 12 > V 32 > V ES-1 ' > V ES-2 It is particularly worth mentioning that in Fig. 5B, Fig. 5C, Fig. 6A and Fig. 6B, the potential of the charge accumulating electrode 24 in those imaging devices from which charge is not to be read out is indicated by a dot-dash line. In this way, movement of charge accumulated in the imaging devices from which charge is not to be read out to the first electrode 21 is prevented. After charge readout of one imaging device is completed, one of the remaining three imaging devices is similarly operated to read out charge. It is sufficient if such an operation as just described is performed a total of four times.

[0151] On the other hand, in the case where a second mode readout method is adopted in which a charge accumulated in four imaging devices is simultaneously read out in total at one time, each potential of the electrodes in the four imaging devices that are in a charge accumulation state is simultaneously V 12 > V ES-1 > V 32 > V ES-2 or V 12 > V ES-1 ' > V 32 > V ES-2 This allows a charge accumulated in the four imaging devices to be moved to the first electrode 21 at the same time.

[0152] In the solid-state image sensor of Working Example 2, since the first isolation electrode is disposed adjacent to, but spaced from, the first electrode between imaging devices placed side by side at least along the second direction in the imaging device block, and the second isolation electrode is disposed between imaging devices in the imaging device block, while the third isolation electrode is disposed between imaging device blocks, during operation of the imaging device, movement of charge between adjacent imaging devices can be securely reduced under the control of the first isolation electrode, the second isolation electrode, and the third isolation electrode. Furthermore, charge accumulated in the photoelectric conversion layer can be smoothly transferred to the first electrode.Furthermore, an improvement in the saturation charge amount in that the saturation charge amount does not decrease, and a balance between reducing the remaining charge upon charge transfer and reducing the occurrence of blooming can be achieved. Working Example 3.

[0153] Working Example 3 is a modification of Working Examples 1 and 2. Working Example 3 may be configured such that the first insulating electrode 31A and the second insulating electrode 31B, or the first insulating electrode 31A, the second insulating electrode 31B, and the third insulating electrode 32 are provided on the photoelectric conversion layer 23 at a distance from the second electrode 22. In other words, the insulating electrodes are upper insulating electrodes.

[0154] A schematic partial sectional view of an imaging device (two imaging devices placed side by side) of Working Example 3 is shown in Fig. 16A. In the imaging device of Working Example 3, on the region 23' of the photoelectric conversion layer 23 positioned between adjacent imaging devices, instead of forming the second electrode 22, an upper first insulating electrode and an upper second insulating electrode (collectively referred to as "insulating electrode 35") are formed. The insulating electrode 35 is provided at a distance from the second electrode 22. In other words, the second electrode 22 is provided for each imaging device, and the insulating electrode 35 is provided on a part of the photoelectric conversion layer 23 at a distance from the second electrode 22 so as to surround at least a part of the second electrode 22. The insulating electrode 35 is formed in a same plane as that of the second electrode 22.It is sufficient if the insulating electrode 35 has, for example, a planar shape similar to that of the insulating electrode 30.

[0155] Specifically, an orthogonal projection image of the insulating electrode 30 is positioned at a distance from the orthogonal projection images of the first electrode 21 and the charge-accumulating electrode 24, and surrounds the orthogonal projection image of the charge-accumulating electrode 24, and an orthogonal projection image of the first insulating electrode 31A is positioned between the orthogonal projection image of the first electrode 21 and an orthogonal projection image of the second insulating electrode 31B. In some cases, a part of the orthogonal projection image of the second insulating electrode 31B and a part of the orthogonal projection image of the charge-accumulating electrode 24 may overlap with each other.Alternatively, the orthogonal projection image of the first isolation electrode 31A is positioned adjacent to, but at a distance from, the orthogonal projection image of the first electrode 21 between imaging devices placed side by side in the imaging device block at least along the second direction, and the second isolation electrode 31B is arranged between imaging devices in the imaging device block, while the third isolation electrode 32 is arranged between imaging device blocks.

[0156] The second electrode 22 and the insulating electrode 35 can be obtained by first forming a material layer to form the second electrode 22 and the insulating electrode 35 on the photoelectric conversion layer 23 and then patterning the material layer. The second electrode 22 and the insulating electrode 35 are separately connected to different wiring (not shown), each of which is connected to the drive circuit. The wiring connected to the second electrode 22 is common to a plurality of imaging devices. The wiring connected to the insulating electrode 35 is also commonly provided for a plurality of imaging devices, similar to the insulating electrodes described hereinabove in connection with Working Examples 1 and 2.

[0157] An insulating film (not shown) is formed on the photoelectric conversion layer 23 including the second electrode 22 and the insulating electrode 35, and a contact hole (not shown) connected to the second electrode 22 is formed in the insulating film above the second electrode 22. Further, a wiring V (not shown) OU , which is connected to the contact hole, is provided on the insulating film.

[0158] An operation of the solid-state image sensor of Working Example 3 can also be configured similarly to the operation of the solid-state image sensor of Working Example 1, and thus a detailed description of the operation will be omitted. However, the potential to be applied to the insulation electrode 35 is set lower than the potential to be applied to the second electrode 22.

[0159] As described above, in the imaging device of Working Example 3, since an insulating electrode is formed on a region of the photoelectric conversion layer positioned between adjacent imaging devices instead of the second electrode, the insulating electrode can reduce the flow of charge generated by photoelectric conversion into an adjacent imaging device. Therefore, a captured video (image) does not suffer from deterioration in quality.

[0160] A schematic partial sectional view of a modification (Modification 1) (the two imaging devices placed side by side in) of the imaging device of Working Example 3 is shown in Fig. 16B illustrates. In Modification 1, the second electrode 22 is provided for each imaging device, and the insulating electrode 35 is provided at a distance from the second electrode 22 so as to surround at least a part of the second electrode 22. A part of the charge accumulating electrode 24 is provided below the insulating electrode 35, and an insulating electrode (lower insulating electrode) 30 is provided below the insulating electrode 35 (upper insulating electrode). A region of the second electrode 22 opposite to the insulating electrode 35 is positioned on the first electrode side. The charge accumulating electrode 24 is surrounded by the insulating electrode 35.

[0161] As in Fig. 17A, which is a schematic partial sectional view of the imaging device (two imaging devices placed side by side) of Working Example 3, the second electrode 22 may be divided into a plurality of regions, and a different potential may be applied individually to the divided second electrodes 22. As shown in Fig. 17B, ​​an insulating electrode 35 may be provided between divided second electrodes 22. Working example 4

[0162] Working Example 4 is a modification of Working Examples 1 to 3. The imaging device and the stacked type imaging device of Working Example 4, whose schematic partial sectional view is shown in Fig. 18, a stacked-type imaging device and a front-illuminated-type imaging device are structured such that the first-type green light imaging device of Working Example 1 (first imaging device) having green light sensitivity and including a first-type green light photoelectric conversion layer that absorbs green light, a conventional second-type blue light imaging device (second imaging device) having blue light sensitivity and including a second-type blue light photoelectric conversion layer that absorbs blue light, and a conventional second-type red light imaging device (third imaging device) having red light sensitivity and including a second-type red light photoelectric conversion layer,which absorb red light. Here, the red light imaging device (third imaging device) and the blue light imaging device (second imaging device) are provided in the semiconductor substrate 70 such that the second imaging device is positioned on the light incident side with respect to the third imaging device. Furthermore, the green light imaging device (first imaging device) is provided above the blue light imaging device (second imaging device).

[0163] On the first surface 70A side of the semiconductor substrate 70, similar to Working Example 1, various transistors are provided, forming a control region. The transistors may be configured and structured similarly to the transistors described hereinabove in connection with Working Example 1. Furthermore, although the second imaging device and the third imaging device are provided on the semiconductor substrate 70, those imaging devices may also be configured and structured substantially similarly to the second imaging device and the third imaging device described hereinabove in connection with Working Example 1.

[0164] On the first surface 70A of the semiconductor substrate 70, interlayer insulating layers 77 and 78 are formed, and on the interlayer insulating layer 78, the photoelectric conversion region (first electrode 21, photoelectric conversion layer 23 and second electrode 22) constituting the imaging device of Working Example 1, the charge accumulating electrode 24 and so on are provided.

[0165] Since, except for the fact that the imaging device and the stacked-type imaging device are of the front-illuminated type, the configuration and structure of the imaging device and the stacked-type imaging device of Working Example 4 can be configured in such a manner similar to the configuration and structure of the imaging devices and the stacked-type imaging devices of Working Examples 1 to 3, their detailed description is omitted. Working example 5

[0166] Working example 5 is a modification of working examples 1 to 4.

[0167] The imaging device and the stacked type imaging device of Working Example 5, whose schematic partial sectional view is shown in Fig. 19 are an imaging device and a stacked-type imaging device of the back-illuminated type, and are structured such that two imaging devices of a first imaging device of the first type and a second imaging device of the second type are stacked. Furthermore, a modification of the imaging device and the stacked-type imaging device of the working example 5, whose schematic partial sectional view is shown in Fig. 20, an imaging device and a stacked-type front-illuminated-type imaging device are structured such that a first imaging device of Working Example 1 of the first type and a second imaging device of the second type are stacked. Here, the first imaging device absorbs light of a primary color, and the second imaging device absorbs light of a complementary color. Alternatively, the first imaging device absorbs white light, and the second imaging device absorbs infrared light.

[0168] A modification of the imaging device of Working Example 5, whose schematic partial sectional view is shown in Fig. 21 is a back-illuminated type imaging device and includes a first imaging device of the first type working example 1. Meanwhile, a modification of the imaging device of the first type working example 5, whose schematic partial sectional view is shown in Fig. 22, a front-illuminated type imaging device is shown, and includes a first imaging device of the first type working example 1. Here, the first imaging device includes three different imaging devices: an imaging device that absorbs red light, another imaging device that absorbs green light, and another imaging device that absorbs blue light.

[0169] Furthermore, a solid-state image sensor according to the first embodiment of the present disclosure includes a plurality of such imaging devices. A Bayer array can be used as the arrangement of the plurality of such imaging devices. Color filters for spectral separation into blue, green, and red are arranged on the light incident side of each imaging device, as required.

[0170] It is particularly noteworthy that, instead of providing one imaging device of Working Example 1 of the first type, it is also possible to employ an embodiment in which two such imaging devices are stacked (that is, an embodiment in which two photoelectric conversion regions are stacked on one semiconductor substrate and one control region is provided for the two imaging devices), or to employ another embodiment in which three such imaging devices are stacked (that is, an embodiment in which three photoelectric conversion regions are stacked on one semiconductor substrate and one control region is provided for the three imaging devices). Examples of the stacked structure of an imaging device of the first type and an imaging device of the second type are exemplified in the following table. First type Second type Back-lit type and front-lit type 1Green 2Blue + Red 1Primary color 1Complementary color 1White 1Infrared rays 2Green + infrared light 2Blue + Red 2Green + Blue 1Red 2White + infrared light 0 3Green + Blue + Red 2Blue-Green(Emerald color) +Infrared light 3Green + Blue + Red 1Infrared light 3Blue + Green + Red 0 Working example 6

[0171] Working Example 6 is a modification of Working Examples 1 to 5 and relates to the imaging device of the present disclosure including a transfer controlling electrode (charge transfer electrode). A schematic partial sectional view of a part of the imaging device and a stacked-type imaging device of Working Example 6 is shown in Fig. 23, and equivalent circuits of the imaging device and the stacked type imaging device of Working Example 6 are shown in FIG. Fig. 24 and Fig. 25 shown.

[0172] The imaging device and the stacked-type imaging device of Working Example 6 further include a transfer controlling electrode (charge transfer electrode) 25 disposed between the first electrode 21 and the charge accumulating electrode 24 at a distance from the first electrode 21 and the charge accumulating electrode 24, and disposed opposite the photoelectric conversion layer 23 with the insulating layer 82 interposed therebetween. The transfer controlling electrode 25 is connected to a pixel driving circuit constituting the driving circuit via a connection hole 68B, a pad region 68A, and a wiring V. OT provided in the interlayer insulating layer 81.

[0173] During a charge accumulation period, the drive circuit generates a potential V 11 applied to the first electrode 21, a potential V 31 applied to the charge accumulating electrode 24 and a potential V 41 applied to the transfer-controlling electrode 25. Photoelectric conversion occurs in the photoelectric conversion layer 23 by light incident on the photoelectric conversion layer 23. Positive holes generated by the photoelectric conversion are supplied from the second electrode 22 via a wiring V OU sent to the drive circuit. On the other hand, since the potential of the first electrode 21 is set higher than the potential of the second electrode 22, that is, since, for example, a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, V 31 > V 41 (for example V 31 > V 11 > V 41 or V 11 > V 31 > V 41 ) is met. Consequently, electrons generated by the photoelectric conversion are attracted to the charge accumulating electrode 24 and reside in the region of the photoelectric conversion layer 23 opposite to the charge accumulating electrode 24. In other words, charge is accumulated in the photoelectric conversion layer 23. Since V 31 > V 41 is satisfied, electrons generated inside the photoelectric conversion layer 23 can be securely prevented from moving toward the first electrode 21. As the time of photoelectric conversion elapses, the value of the potential in the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 increases toward the negative side.

[0174] In a later phase of the charge accumulation period, a reset operation is performed. Consequently, the potential of the first floating diffusion layer FD1 is reset, and the potential of the first floating diffusion layer FD1 becomes the potential V DD the power supply.

[0175] After the reset operation is completed, the charge is read out. In particular, during a charge transfer period, the drive circuit generates a potential V 12 applied to the first electrode 21, a potential V 32 applied to the charge accumulating electrode 24 and a potential V 42 applied to the transmission controlling electrode 25. Here it is assumed that V 32 ≤ V 42 ≤ V 12 is satisfied. As a result, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 are reliably read out to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, a charge accumulated in the photoelectric conversion layer 23 is read out to the control region.

[0176] With the above, the operation sequence of charge accumulation, reset operation and charge transfer is completed.

[0177] Operation of the amplifying transistor TR1 amp and that of the selection transistor TR1 sel After electrons are read out into the first floating diffusion layer FD1, the operation is the same as that of conventional transistors. The operation sequences of charge accumulation, reset, and charge transfer of the second imaging device and the third imaging device are also similar to conventional operation sequences of charge accumulation, reset, and charge transfer.

[0178] The other source / drain region 51B of the reset transistor TR1 rst can, instead of using the power supply V DD to be connected, to be grounded. Working example 7

[0179] Working Example 7 is a modification of Working Examples 1 to 6 and relates to an imaging device of the present disclosure including a plurality of segments of a charge accumulating electrode.

[0180] A schematic partial sectional view of a part of the imaging apparatus of Working Example 7 is shown in Fig. 26, equivalent circuits of the imaging device and the stacked type imaging device of Working Example 7 are shown in Fig. 27 and Fig. 28, and a schematic arrangement diagram of a first electrode and a charge accumulating electrode constituting the imaging device of Working Example 7 is shown in Fig. 29 shown.

[0181] In Working Example 7, the charge accumulating electrode 24 includes a plurality of charge accumulating electrode segments 24A, 24B, and 24C. It is sufficient if the number of charge accumulating electrode segments is two or more, and in Working Example 7, it is three.Furthermore, although a different potential is applied to each of the N charge accumulating electrodes in the imaging device and the stacked-type imaging device of Working Example 7, since the potential of the first electrode 21 is higher than the potential of the second electrode 22, that is, since, for example, a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, during a charge transfer period, the potential applied to the charge accumulating electrode segment 24A (the first segment of a photoelectric conversion region) positioned closest to the first electrode 21 is higher than the potential applied to the charge accumulating electrode segment 24C (the N-th segment of a photoelectric conversion region) located farthest from the first electrode.By providing a potential gradient at the charge-accumulating electrode 24 in this way, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode 24 are read out with a higher degree of certainty to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, a charge accumulated in the photoelectric conversion layer 23 is read out into the control region.

[0182] The other source / drain region 51B of the reset transistor TR1 rst can, instead of using the power supply V DD to be connected, to be grounded. Working example 8

[0183] Working Example 8 is a modification of Working Examples 1 to 7 and relates to an imaging device of the first configuration and the sixth configuration.

[0184] A schematic partial sectional view of the imaging device and the stacked type imaging device of Working Example 8 is shown in Fig. 30, and a schematic partial sectional view in which a portion where the charge accumulating electrode, the photoelectric conversion layer and the second electrode are stacked is enlarged is shown in Fig. 31 shown.

[0185] In the imaging apparatus of Working Example 8 or in imaging apparatuses of Working Examples 9 to 13 described hereinafter, the photoelectric conversion region N (where ≥ 2) segments of a photoelectric conversion region (in particular, three segments 201, 202 and 203 of a photoelectric conversion region), the photoelectric conversion layer 23 comprises N segments of a photoelectric conversion layer (specifically, three segments 231, 232 and 233 of a photoelectric conversion layer), the insulating layer 82 comprises N segments of an insulating layer (in particular three segments 821, 822 and 823 of an insulating layer), In Working Examples 8 to 10, the charge accumulating electrode 24 comprises N segments of a charge accumulating electrode (in particular, in the embodiments, three segments 241, 242 and 243 of a charge accumulating electrode), In Working Examples 11 and 12 and in some cases in Working Example 10, the charge accumulating electrode 24 comprises N segments of a charge accumulating electrode (in particular, three segments 241, 242 and 243 of a charge accumulating electrode) arranged at a distance from each other, contains the n-th (where n = 1, 2, 3, ..., N) segment 20 n of a photoelectric conversion region, the n-th segment 241, a charge accumulating electrode, the n-th segment 822 of an insulating layer and the n-th segment 23 n a photoelectric conversion layer and a segment of a photoelectric conversion region having a higher value of n is positioned further away from the first electrode 21.

[0186] Otherwise, the imaging apparatus of Working Example 8 or the imaging apparatus of each of Working Examples 9 and 12 described hereinafter is configured such that it contains a photoelectric conversion region comprising a first electrode 21, a photoelectric conversion layer 23 and a second electrode 22 stacked on top of each other, the photoelectric conversion region further includes a charge accumulating electrode 24 which is arranged at a distance from the first electrode 21 and is arranged opposite to the photoelectric conversion layer 23 with the insulating layer 82 arranged therebetween, and, when the stacking direction of the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23 is defined as the Z direction, and a direction away from the first electrode 21 is defined as the X direction, the cross-sectional area of ​​the stacked region when the stacked region in which the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23 are stacked is cut along a virtual YZ plane varies depending on the distance from the first electrode 21.

[0187] Further, in the imaging device of Working Example 8, the thickness of the segment of an insulating layer changes over a range from the first segment 201 of a photoelectric conversion region to the N-th segment 20 N a photoelectric conversion region gradually. In particular, the thickness of the insulating layer segment gradually increases. Otherwise, in the imaging device of Working Example 8, the width of the cross section of the stacked region is fixed, and the thickness of the cross section of the stacked region, in particular, the thickness of the insulating layer segment, gradually increases depending on the distance from the first electrode 21. It is particularly noteworthy that the thickness of the insulating layer segment increases stepwise. The thickness of the segment 82 n an insulating layer in the n-th segment 20 n of a photoelectric conversion area is fixed. If the thickness of the segment 82 n an insulating layer in the n-th segment 20 n of a photoelectric conversion area is represented by "1", can be considered as the thickness of the segment 82 (n+1) an insulating layer in the (n+1)-th segment 20 (n+1) of a photoelectric conversion region 2 to 10. The thickness of the segment 82 n However, the thickness of an insulating layer is not limited to the value just mentioned. In Working Example 8, by gradually reducing the thickness of segments 241, 242, and 243 of a charge-accumulating electrode, the thickness of segments 821, 822, and 823 of an insulating layer is gradually increased. The thickness of segments 231, 232, and 233 of a photoelectric conversion layer is fixed.

[0188] An operation of the imaging apparatus of Working Example 8 will be described below.

[0189] During a charge accumulation period, the drive circuit generates a potential V 11 to the first electrode 21 and a potential V 31 applied to the charge accumulating electrode 24. Light incident on the photoelectric conversion layer 23 causes photoelectric conversion in the photoelectric conversion layer 23. Positive holes generated by the photoelectric conversion are discharged from the second electrode 22 via the wiring V OU sent to the drive circuit. Since the potential of the first electrode 21 is set higher than the potential of the second electrode, that is, since a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, V 31 ≥ V 11 , preferably V 31 > V 11 , is fulfilled. As a result, electrons generated by the photoelectric conversion are attracted to the charge accumulating electrode 24 and remain in the area of ​​the photoelectric conversion layer 23 opposite to the charge accumulating electrode 24. In other words, a charge is accumulated in the photoelectric conversion layer 23. Since V 31 > V 11 is satisfied, electrons generated inside the photoelectric conversion layer 23 do not move toward the first electrode 21. As a time of photoelectric conversion elapses, the potential of the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 will assume a value increasing toward the negative side.

[0190] Since the imaging apparatus of Working Example 8 adopts the configuration in which the thickness of the segment of an insulating layer gradually increases, if such a state as V 31 ≥ V 11 occurs during a charge accumulation period, then the n-th segment 20 n of a photoelectric conversion area a larger amount of charge than the (n+1)-th segment 20 (n+1) a photoelectric conversion region and a stronger electric field is applied, so that a flow of charge from the first segment 201 of a photoelectric conversion region to the first electrode 21 can be securely prevented.

[0191] A reset operation is performed at a later stage of the charge accumulation period. This resets the potential of the first floating diffusion layer FD1 and causes the potential of the first floating diffusion layer FD1 to reach the potential V DD the power supply.

[0192] After the reset operation is completed, the charge is read out. In particular, during a charge transfer period, the drive circuit generates a potential V 12 to the first electrode 21 and a potential V 32 applied to the charge accumulating electrode 24. Here it is assumed that V 12 > V 32 As a result, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge accumulating electrode 24 are read out into the first electrode 21 and further into the first floating diffusion layer FD1. In other words, a charge accumulated in the photoelectric conversion layer 23 is read out into the control region.

[0193] In particular, if such a condition as V 12 > V 32 during a charge transfer period, a flow of charge from the first segment 201 of a photoelectric conversion region to the first electrode 21 and a flow of charge from the (n+1)-th segment 20 (n+1) a photoelectric conversion area to the n-th segment 20 n a photoelectric conversion area can be safely ensured.

[0194] Such an operation sequence as charge accumulation, reset operation and charge transfer is thus completed.

[0195] In the imaging device of Working Example 8, since the thickness of the segment of an insulating layer gradually changes over a range from the first segment of a photoelectric conversion region to the N-th segment of a photoelectric conversion region, or since the cross-sectional area of ​​the stacked region when the stacked region in which the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer are stacked is cut along a virtual YZ plane changes depending on the distance from the first electrode, a kind of charge transfer gradient is formed, and charge generated by photoelectric conversion can be transferred more easily and securely.

[0196] Since the imaging device and the stacked type imaging device of Working Example 8 can be manufactured by a method substantially similar to that of the imaging device of Working Example 1, a detailed description of the method will be omitted.

[0197] It is particularly noteworthy that, in the imaging device of Working Example 8, in forming the first electrode 21, the charge accumulating electrode 24, and the insulating layer 82, a conductive material layer for forming the charge accumulating electrode 243 is first formed on an interlayer insulating layer 81 and then patterned so that the conductive material layer remains in areas where the photoelectric conversion region segments 201, 202, and 203 and the first electrode 21 are to be formed, and so that a part of the first electrode 21 and the charge accumulating electrode 243 can be obtained. Then, an insulating layer for forming the insulating layer segment 823 is formed and patterned over an entire area, and thereafter, a planarization process is performed so that the insulating layer segment 823 can be obtained.A conductive material layer for forming the charge-accumulating electrode 242 is then formed over an entire area and patterned such that the conductive material layer remains in regions where the photoelectric conversion region segments 201 and 202 and the first electrode 21 are to be formed, thereby obtaining a part of the first electrode 21 and the charge-accumulating electrode 242. Next, an insulating layer for forming the insulating layer segment 822 is formed over an entire area and patterned, and then a planarization process is performed so that the insulating layer segment 822 can be obtained.A conductive material layer for forming the charge-accumulating electrode 241 is then formed and patterned such that the conductive material layer remains in areas where the photoelectric conversion region segment 201 and the first electrode 21 are to be formed, whereby the first electrode 21 and the charge-accumulating electrode 241 can be obtained. An insulating layer is then formed over an entire area, and a planarization process is performed so that the insulating layer segment 821 (insulating layer 82) can be obtained. The photoelectric conversion layer 23 is then formed on the insulating layer 82. The photoelectric conversion region segments 201, 202, and 203 can be obtained in this manner.

[0198] The other source / drain region 51B of the reset transistor TR1 rst can, instead of using the power supply V DD to be connected, to be grounded. Working example 9

[0199] The imaging apparatus of Working Example 9 relates to an imaging apparatus of the second configuration and the sixth configuration of the present disclosure. As shown in Fig. 32, which is a schematic partial sectional view in which a region where the charge accumulating electrode, the photoelectric conversion layer, and the second electrode are stacked is shown on an enlarged scale, in the imaging device of Working Example 9, the thickness of the segment of a photoelectric conversion layer changes over a range from the first segment 201 of a photoelectric conversion region to the N-th segment 20 N of a photoelectric conversion region gradually. Incidentally, in the imaging device of Working Example 9, the width of the cross section of the stacked region is fixed, while the thickness of the cross section of the stacked region, specifically the thickness of the photoelectric conversion layer segment, is gradually increased depending on the distance from the first electrode 21. In particular, the thickness of the photoelectric conversion layer segment is gradually increased. It is particularly noteworthy that the thickness of the photoelectric conversion layer segment is increased in a stepwise manner. The thickness of the segment 23 n a photoelectric conversion layer in the n-th segment 20 n of a photoelectric conversion area is fixed. If the thickness of the segment 23 n a photoelectric conversion layer in the n-th segment 20 n of a photoelectric conversion area "1" can be considered as the thickness of the segment 23 (n+1) a photoelectric conversion layer in the (n+1)-th segment 20 (n+1) of a photoelectric conversion region 2 to 10 can be exemplified. However, the thickness is not limited to the values ​​just mentioned. In Working Example 9, by reducing the thickness of segments 241, 242, and 243 of a charge accumulating electrode, the thickness of segments 231, 232, and 233 of a photoelectric conversion layer is gradually increased. The thickness of segments 821, 822, and 823 of an insulating layer is fixed.

[0200] In the imaging device of Working Example 9, since the thickness of the segment of a photoelectric conversion layer gradually increases, if one enters such a state as V during a charge accumulation period, 31 ≥ V 11 occurs, then a stronger electric field to the n-th segment 20 n a photoelectric conversion area than to the (n+1)-th segment 20 (n+1) of a photoelectric conversion region, and a flow of charge from the first segment 201 of a photoelectric conversion region to the first electrode 21 can be reliably prevented. If one then enters a state such as V 32 < V 12 occurs, then a flow of charge from the first segment 201 of a photoelectric conversion region to the first electrode 21 and a flow of charge from the (n+1)-th segment 20 (n+1) a photoelectric conversion area to the n-th segment 20 n a photoelectric conversion area can be safely ensured.

[0201] In such a way, in the imaging device of Working Example 9, since the thickness of the photoelectric conversion layer segment gradually changes over a range from the first photoelectric conversion region segment to the N-th photoelectric conversion region segment, or otherwise, when the stacked region in which the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer are stacked is cut along the virtual YZ plane, the sectional area of ​​the stacked region changes depending on the distance from the first electrode, a kind of charge transfer gradient is formed, and charge generated by photoelectric conversion can be transferred more easily and surely.

[0202] In the imaging device of Working Example 9, in forming the first electrode 21, the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23, first, a conductive material layer for forming the charge accumulating electrode 243 is formed on an interlayer insulating layer 81 and patterned so that the conductive material layer remains in areas where the segments 201, 202, and 203 of a photoelectric conversion region and the first electrode 21 are to be formed, whereby a part of the first electrode 21 and the charge accumulating electrode 243 can be obtained.Next, a conductive material layer for forming the charge-accumulating electrode 242 is formed over an entire surface and patterned so that the conductive material layer remains in regions where the photoelectric conversion region segments 201 and 202 and the first electrode 21 are to be formed, thereby obtaining a part of the first electrode 21 and the charge-accumulating electrode 242. A conductive material layer for forming the charge-accumulating electrode 241 is then formed over an entire surface and patterned so that the conductive material layer remains in regions where the photoelectric conversion region segment 201 and the first electrode 21 are to be formed, thereby obtaining the first electrode 21 and the charge-accumulating electrode 241. The insulating layer 82 is then conformally formed over an entire surface.The photoelectric conversion layer 23 is then formed on the insulating layer 82, and a planarization process is applied to the photoelectric conversion layer 23. In this manner, the segments 201, 202, and 203 of a photoelectric conversion region can be obtained. Working example 10

[0203] Working Example 10 relates to an imaging device of the third configuration. A schematic partial sectional view of the imaging device and the stacked imaging device of Working Example 10 is shown in Fig. 33. In the imaging device of Working Example 10, the material constituting the insulating layer segment is different between adjacent segments of a photoelectric conversion region. Here, the value of the relative permittivity of a material constituting the insulating layer segment increases over a range from the first segment 201 of a photoelectric conversion region to the N-th segment 20 N of a photoelectric conversion region gradually decreases. In the imaging device of Working Example 10, the same potential may be applied to all the N charge accumulating electrode segments, or a different potential may be applied to each of the N charge accumulating electrode segments. In the latter case, it is sufficient if the charge accumulating electrode segments 241, 242, and 243, which are arranged at a distance from each other, are connected to the vertical drive circuit 112 via pad regions 641, 642, and 643, respectively, similarly to the description of Working Example 11.

[0204] By adopting such a configuration as described above, a kind of charge transfer gradient is then formed, and if one enters such a state as V during a charge accumulation period, 31 ≥ V 11 occurs, then the n-th segment of a photoelectric conversion region can accumulate a larger amount of charge than the (n+1)-th segment of a photoelectric conversion region. If one then enters such a state V during a charge accumulation period, 32 < V 12 occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be assuredly ensured. Working example 11

[0205] Working Example 11 relates to an imaging device of the fourth configuration. A schematic partial sectional view of the imaging device and the stacked-type imaging device of Working Example 11 is shown in Fig. 34. In the imaging device of Working Example 11, the material constituting the charge-accumulating electrode segment is different between adjacent segments of a photoelectric conversion region. Here, the work function value of the material constituting the insulating layer segment is different over a range from the first segment 201 of a photoelectric conversion region to the N-th segment 20 N of a photoelectric conversion region is set gradually higher. In the imaging device of Working Example 11, the same potential may be applied to all N segments of a charge accumulating electrode, or a different potential may be applied to each of the N segments of a charge accumulating electrode. In the latter case, the charge accumulating electrode segments 241, 242, and 243 are connected to the vertical drive circuit 112 constituting the drive circuit via pad regions 641, 642, and 643, respectively. Working example 12

[0206] The imaging device of Working Example 12 refers to an imaging device of the fifth configuration. Schematic plan views of a segment of a charge accumulating electrode in Working Example 12 are shown in Fig. 35A, Fig. 35B, Fig. 36A and Fig. 36B. A schematic partial sectional view of the imaging device and the stacked type imaging device of Working Example 12 is similar to that shown in Fig. 34 or Fig. 37. In the imaging device of Working Example 12, the area of ​​the segment of a charge accumulating electrode increases over a range from the first segment 201 of a photoelectric conversion layer to the N-th segment 20 N a photoelectric conversion layer gradually decreases. In the imaging device of Working Example 12, the same potential may be applied to all the N charge accumulating electrode segments, or a different potential may be applied to each of the N charge accumulating electrode segments. Specifically, it is sufficient if the charge accumulating electrode segments 241, 242, and 243, which are arranged at a distance from each other, are connected to the vertical drive circuit 112 constituting the drive circuit via the pad regions 641, 642, and 643, respectively, similarly to the description of Working Example 11.

[0207] In Working Example 12, the charge accumulating electrode 24 includes a plurality of charge accumulating electrode segments 241, 242, and 243. It is sufficient if the number of charge accumulating electrode segments is two or more, and in Working Example 12, it is three.Further, in the imaging device and the stacked-type imaging device of Working Example 12, since the potential of the first electrode 21 is higher than the potential of the second electrode 22, that is, for example, since a positive potential is applied to the first electrode 21 and a negative potential is applied to the second electrode 22, during a charge transfer period, the potential applied to the charge accumulating electrode segment 241 positioned closest to the first electrode 21 is higher than the potential applied to the charge accumulating electrode segment 243 positioned farthest from the first electrode 21.By providing a potential gradient at the charge-accumulating electrode 24 in this way, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode 24 are read out with a higher degree of certainty to the first electrode 21 and further to the first floating diffusion layer FD1. In other words, a charge accumulated in the photoelectric conversion layer 23 is read out to the control region.

[0208] During a charge transfer period, by setting the potential of the charge-accumulating electrode segment 243 < the potential of the charge-accumulating electrode segment 242 < the potential of the charge-accumulating electrode segment 241, electrons residing in the region of the photoelectric conversion layer 23 can be read out to the first floating diffusion layer FD1 at once. Otherwise, during a charge transfer period, since the potential of the charge-accumulating electrode segment 243, the potential of the charge-accumulating electrode segment 242, and the potential of the charge-accumulating electrode segment 241 are gradually changed (i.e., changed stepwise or according to a slope), electrons residing in the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode segment 243 can be read out.into the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode segment 242, electrons residing in the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode segment 242 can be moved into the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode segment 241, and then electrons residing in the region of the photoelectric conversion layer 23 opposite the charge-accumulating electrode segment 241 can be read out into the first floating diffusion layer FD1.

[0209] The other source / drain region 51B of the reset transistor TR3 rst can, instead of using the power supply V DD to be connected, to be grounded.

[0210] Also, in the imaging device of Working Example 12, by adopting such a configuration as described above, a type of charge transfer gradient is formed. Since the area of ​​the segment of a charge accumulating electrode extends over a range from the first segment 201 of a photoelectric conversion region to the N-th segment 20 N of a photoelectric conversion area gradually decreases, if one enters a state such as V 31 ≥ V 11 occurs, then the n-th segment of a photoelectric conversion region will accumulate a larger amount of charge than the (n+1)-th segment of a photoelectric conversion region. If one then enters a state such as V 32 < V 12 occurs, then a flow of charge from the first segment of a photoelectric conversion region to the first electrode and a flow of charge from the (n+1)-th segment of a photoelectric conversion region to the n-th segment of a photoelectric conversion region can be assuredly ensured. Working example 13

[0211] Working Example 13 relates to an imaging device of the sixth configuration. A schematic partial sectional view of the imaging device and the stacked-type imaging device of Working Example 13 is shown in Fig. 37. Furthermore, Fig. 38A and Fig. 38B illustrates schematic plan views of a segment of a charge accumulating electrode in Working Example 13. The imaging device of Working Example 13 includes a photoelectric conversion region in which a first electrode 21, a photoelectric conversion layer 23, and a second electrode 22 are stacked, and further includes a charge accumulating electrode 24 spaced apart from the first electrode 21 and opposed to the photoelectric conversion layer 23 with an insulating layer 82 interposed therebetween.When the stacking direction of the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23 is defined as the Z direction and a direction away from the first electrode 21 is defined as the X direction, the cross-sectional area of ​​the stacked region changes when the stacked region in which the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23 are stacked is cut along a virtual YZ plane, depending on the distance from the first electrode 21.

[0212] Specifically, in the imaging device of Working Example 13, the thickness of the cross section of the stacked region is fixed, and the width of the cross section of the stacked region decreases with increasing distance from the first electrode 21. It is particularly noted that the width may decrease continuously (see Fig. 38A) or gradually decrease (see Fig. 38B).

[0213] In such a way, in the imaging device of Working Example 12, since the cross-sectional area of ​​the stacked region when the stacked region in which the charge accumulating electrode 24, the insulating layer 82, and the photoelectric conversion layer 23 are stacked is cut along a virtual YZ plane changes depending on the distance from the first electrode, a kind of charge transfer gradient is formed, and charge generated by photoelectric conversion is transferred more easily and surely.

[0214] Although the present disclosure has been described above based on the preferred working examples, the present disclosure is not limited to the described working examples. The structures and configurations, manufacturing conditions, manufacturing methods, and materials used of the imaging devices, stacked-type imaging devices, and solid-state image sensors described in connection with the working examples are exemplary and can be appropriately modified. The imaging devices of the working examples can be appropriately combined.For example, the imaging device of working example 8, the imaging device of working example 9, the imaging device of working example 10, the imaging device of working example 11, and the imaging device of working example 12 can be arbitrarily combined, and the imaging device of working example 8, the imaging device of working example 9, the imaging device of working example 10, the imaging device of working example 11, and the imaging device of working example 13 can be arbitrarily combined.

[0215] Although in the working examples, one imaging device block includes 2×2 imaging devices, the number of one imaging device block is not limited to this, and it is also possible to arrange for one imaging device block to include, for example, 2×1 imaging devices, 3×3 imaging devices, 4×4 imaging devices, or the like. The first direction may be a row direction or a column direction in an array of imaging devices of the solid-state image sensor.

[0216] In some cases, it is also possible to ensure that the floating diffusion layers FD1, FD2 and FD3, the one source / drain region 51C of the reset transistor TR1 rst , the region 45C of the semiconductor substrate 70 near the gate region 45 of the transfer transistor TR2 trs and the region 46C of the semiconductor substrate 70 near the gate region 46 of the transfer transistor TR3 trs shared by a variety of imaging devices.

[0217] As in Fig. 39, which is a modification of the imaging device and the stacked-type imaging device described in connection with Working Example 1, for example, the first electrode 21 may be configured to extend in an opening 84A provided in the insulating layer 82 and to be connected to the photoelectric conversion layer 23.

[0218] Alternatively, as in Fig. 40, which illustrates a modification of, for example, the imaging device and the stacked-type imaging device described hereinabove in connection with Working Example 1, and in Fig. 41A, which is a schematic partial sectional view illustrating a portion of the first electrode and so on on an enlarged scale, a peripheral portion of an upper surface of the first electrode 21 is covered with the insulating layer 82, and the first electrode 21 is exposed on a bottom surface of an opening 84B. When a surface of the insulating layer 82 in contact with the upper surface of the first electrode 21 is a first surface 82p, while a surface of the insulating layer 82 in contact with a portion of the photoelectric conversion layer 23 opposite to the charge accumulating electrode 24 is a second surface 82q, a side surface of the opening 84B has an inclination extending from the first surface 82p toward the second surface 82q.By providing an inclination on the side surface of the opening 84B in such a manner, movement of a charge from the photoelectric conversion layer 23 to the first electrode 21 becomes even smoother. It is particularly noteworthy that, although in the embodiment shown in FIG. Fig. 41A, the side surface of the opening 84B is rotationally symmetrical with respect to an axis line of the opening 84B as the center, an opening 84C may be provided such that the side surface of the opening 84C is positioned on the side of the charge accumulating electrode 24 with an inclination extending from the first surface 82p toward the second surface 82q, as shown in Fig. 41B. This makes it less likely that a charge will move from a portion of the photoelectric conversion layer 23 on the opposite side of the charge accumulating electrode 24 via the opening 84C. Further, although the side surface of the opening 84B has a slope extending from the first surface 82p toward the second surface 82q, an edge portion of the side surface of the opening 84B on the second surface 82q may be inclined relative to an edge portion of the first electrode 21 as shown in Fig. 41A shown positioned on the outer side or may be positioned with respect to an edge region of the first electrode 21 as shown in Fig. 41C shown. When the former configuration is adopted, charge transfer becomes even easier, and when the latter configuration is adopted, the shape dispersion during the formation of the openings can be reduced.

[0219] Such openings 84B and 84C as described above can be formed by reflowing an etching mask made of a resist material, which is formed when the opening is formed in an insulating layer by an etching process to provide a slope on a side surface of the opening of the etching mask, and then etching the insulating layer 82 using the etching mask.

[0220] Furthermore, as in Fig. 42, which illustrates a modification of the imaging device and the stacked-type imaging device described hereinabove, for example, in connection with Working Example 1, the imaging device and the stacked-type imaging device may be configured such that light is incident from the second electrode 22 side, and a shading layer 92 is formed on the light incident side from the second electrode 22. Note that it is also possible to arrange for various types of wiring provided on the light incident side with respect to the photoelectric conversion layer to function as the shading layer.

[0221] It is particularly worth mentioning that, although in the Fig. 42, the shading layer 92 is formed above the second electrode 22, that is, although the shading layer 92 is formed above the first electrode 21 on the light incident side from the second electrode 22, it is otherwise as shown in Fig. 43 may be arranged on a surface of the second electrode 22 on the light incident side. Furthermore, in some cases, the shading layer 92 may be arranged as shown in Fig. 44 shown in the second electrode 22.

[0222] Alternatively, it is also possible to adopt such a structure in which light is incident from the side of the second electrode 22, while light is not incident on the first electrode 21. In particular, as shown in Fig. 42, a shading layer 92 is formed above the first electrode 21 and on the light incident side from the second electrode 22. As shown in Fig. 46, alternatively, a structure may be used in which an on-chip microlens 90 is provided above the charge-accumulating electrode 24 and the second electrode 22 so that light incident on the on-chip microlens 90 is focused on the charge-accumulating electrode 24 and does not reach the first electrode 21. It is particularly to be noted that in the case where the transfer controlling electrode 25 is provided as described hereinabove in connection with Working Example 6, it is possible to adopt an embodiment in which light does not fall on the first electrode 21 and the transfer controlling electrode 25, and in particular, it is also possible to adopt a structure in which the shading layer 92 is formed above the first electrode 21 and the transfer controlling electrode 25, as shown in Fig. 45. Alternatively, it is also possible to adopt a structure in which light incident on the on-chip microlens 90 does not reach the first electrode 21 or the first electrode 21 and the transmission controlling electrode 25.

[0223] By adopting such configurations or structures as described above, or by providing the shading layer 92 or designing the on-chip microlens 90 so that light is incident only on a region of the photoelectric conversion layer 23 positioned above the charge-accumulating electrode 24, a region of the photoelectric conversion layer 23 positioned above the first electrode 21 (or above the first electrode 21 and the transfer-controlling electrode 25) does not contribute to photoelectric conversion. Therefore, all pixels can be reset at once with a higher degree of accuracy, and a global aperture function can be more easily realized. Specifically, in a driving method for a solid-state image sensor including a plurality of imaging devices having such configurations or structures as described above, steps are performed in which in all imaging devices, while charge is accumulated in the photoelectric conversion layer 23, charge in the first electrode 21 is discharged from the system at once and then in all imaging devices, the charge accumulated in the photoelectric conversion layer 23 is transferred to the first electrode 21 at once, and after completion of the transfer, the transferred charge to the first electrode 21 is sequentially read out in each imaging device.

[0224] In such a driving method for a solid-state image sensor, each imaging device is configured so that incident light from the second electrode side does not fall on the first electrode, and in all imaging devices, while charge is accumulating in the photoelectric conversion layer, charge in the first electrode is discharged from the system at once. Thus, in all imaging devices, first electrode resetting can be safely performed at once. Afterward, in all imaging devices, charge accumulated in the photoelectric conversion layer is transferred to the first electrode at once, and after the transfer is completed, the charge accumulated in the first electrode is sequentially read out in each imaging device. Therefore, what is commonly called a global aperture function can be readily realized.

[0225] Further, as a modification of Working Example 6, a plurality of transfer controlling electrodes may be provided from a position closest to the first electrode 21 toward the charge accumulating electrode 24, as shown in Fig. 47. It is particularly worth mentioning that Fig. 47 illustrates an example in which two transfer controlling electrodes 25A and 25B are provided. Furthermore, it is possible to adopt a structure in which an on-chip microlens 90 is provided above the charge accumulating electrode 24 and the second electrode 22 so that light incident on the on-chip microlens 90 is focused on the charge accumulating electrode 24 and does not reach the first electrode 21 and the transfer controlling electrodes 25A and 25B.

[0226] In the Fig. 30 and Fig. In Working Example 8 shown in Figure 31, the thickness of the segments 241, 242, and 243 of a charge accumulating electrode is gradually reduced to gradually increase the thickness of the segments 821, 822, and 823 of an insulating layer. On the other hand, as shown in Fig. 48, which is a schematic partial sectional view illustrating, on an enlarged scale, a portion where the charge accumulating electrode, the photoelectric conversion layer, and the second electrode are stacked in the modification of Working Example 8, the thickness of the charge accumulating electrode segments 241, 242, and 243 is fixed, while the thickness of the insulating layer segments 821, 822, and 823 is gradually increased. Note that the thickness of the photoelectric conversion layer segments 231, 232, and 233 is fixed.

[0227] In the Fig. Furthermore, in Working Example 9 shown in Figure 32, the thickness of the segments 231, 232, and 233 of a photoelectric conversion layer is gradually increased by gradually reducing the thickness of the segments 241, 242, and 243 of a charge accumulating electrode. On the other hand, as shown in Fig. 49, which is a schematic partial sectional view in which a portion where the charge accumulating electrode, the photoelectric conversion layer, and the second electrode are stacked in the modification of Working Example 9 is shown on an enlarged scale, the thickness of the segments 231, 232, and 233 of a photoelectric conversion layer are gradually increased by setting the thickness of the segments 241, 242, and 243 of a charge accumulating electrode, and the thickness of the segments 821, 822, and 823 of an insulating layer are gradually reduced.

[0228] In the imaging device and the solid-state image sensor described hereinabove in connection with Working Example 1, the second isolation electrode 31B is configured to be common to a plurality of imaging devices, and the second isolation electrode 31B can be controlled simultaneously in the plurality of imaging devices. Fig. 50 schematically illustrates an arrangement state of the charge accumulating electrode, the first insulating electrode, the second insulating electrode, and the first electrode in such a modification of the solid-state image sensor of Working Example 1 as just described.

[0229] An arrangement state of the charge accumulating electrode, the first insulating electrode, the second insulating electrode and the first electrode in further modifications of the imaging device described hereinabove in connection with Working Example 1 is shown in Fig. 51A and Fig. 51B. In these modifications, the planar shape of the charge accumulating electrode 24 is a quadrilateral with four corner regions, and a corner region opposite the first electrode 21 is cut away. Furthermore, in the Fig. 51A, a portion of the first insulation electrode 31A opposite to the first electrode 21 is inserted into the cut-out portion of the charge accumulating electrode 24. Furthermore, in the example shown in Fig. 51B, the first insulation electrode 31A is positioned between the first electrode 21 and the cut-away portion of the charge accumulating electrode 24. By adopting such a structure as just described, the potential between the charge accumulating electrode 24 and the first electrode 21 can be controlled with a higher degree of accuracy. It should be noted that the described modifications can be applied to Working Example 2 or other working examples.

[0230] An arrangement state of the charge accumulating electrode, the first insulating electrode, the second insulating electrode, the third insulating electrode and the first electrode in the further modification of the imaging device described hereinabove in connection with Working Example 2 is shown in Fig. 52 is schematically shown. In these modifications, the planar shape of the charge accumulating electrode 24 is a quadrilateral having four corner portions, and a corner portion opposite to the first electrode 21 is cut away. Further, the first insulating electrode 31A is disposed between the first electrode 21 and the cutaway portion of the charge accumulating electrode 24. The first insulating electrodes 31A constituting the imaging devices are further connected to each other. By adopting such a structure as just described, the potential between the charge accumulating electrode 24 and the first electrode 21 can be controlled with a higher degree of accuracy. It is to be noted that the described modifications can be applied to other working examples.

[0231] A further modification of the solid-state image sensor described hereinabove in connection with Working Example 2 is in Fig. 53. Specifically, in four imaging devices, a single common first electrode 21 is provided for the four charge accumulating electrodes 24, and an insulating electrode 30 (first insulating electrode 31A, second insulating electrode 31B, and third insulating electrode 32) is formed under a portion of the insulating layer 82 in a region surrounded by the four charge accumulating electrodes 24. Further, a charge discharging electrode 26 is formed under a portion of the insulating layer 82 in the region surrounded by the four charge accumulating electrodes 24. The charge discharging electrode 26 and the photoelectric conversion layer 23 are connected to each other through an opening provided in the insulating layer 82.Specifically, similar to the relationship between the photoelectric conversion layer 23 and the first electrode 21, the photoelectric conversion layer 23 extends into the opening provided in the insulating layer 82, and this extension of the photoelectric conversion layer 23 is in contact with the charge-discharging electrode 26. Such a charge-discharging electrode 26 as just described can also be used for other working examples.

[0232] Alternatively, Fig. 54 shows a schematic plan view of the first electrode and the charge accumulating electrode in another modification of the solid-state image sensor of Working Example 2. In this solid-state image sensor, the imaging device block includes two imaging devices. Furthermore, an on-chip microlens 90 is disposed above the imaging device block. The first isolation electrode 31A and the second isolation electrode 31B are disposed between the two imaging devices constituting the imaging device block, and the third isolation electrode 32 is disposed between the imaging device blocks.

[0233] For example, a photoelectric conversion layer has charge accumulating electrodes 24 11 , 24 21 , 24 31 and 24 41 corresponding to the array of photodiodes forming an imaging device block, has a high sensitivity to incident light from the top right of the figure. Furthermore, a photoelectric conversion layer has charge accumulating electrodes 24. 12 , 24 22 , 24 22 and 24 12 corresponding to the charge accumulating electrode 24. 11 and an imaging device with the charge accumulating electrode 24 21 combined, it is possible to detect a phase difference signal of the image plane. If a signal from the imaging device with the charge accumulating electrode 24 11 and a signal from the imaging device with the charge accumulating electrode 24 12 by combining with those imaging devices, an imaging device can be further configured.

[0234] Fig. 55A illustrates an example of a drive for reading out the imaging device block of Working Example 2 shown in Fig. 54. Signals from the two imaging devices applied to the charge accumulating electrode 24 21 and the charge accumulating electrode 24 22 are read out by a process as follows: [Step A]

[0235] Input of an auto-zero signal or a signal for automatic zero point adjustment into a comparator [Step B]

[0236] Reset operation of a shared single floating diffusion layer [Step C]

[0237] P-phase readout in the imaging device, the charge accumulating electrode 24 21 and movement of a charge to a first electrode 212 [Step D]

[0238] D-phase readout in the imaging device, the charge accumulating electrode 24 21 and movement of a charge to the first electrode 212 [Step E]

[0239] Reset operation of the shared single floating diffusion layer [Step F]

[0240] Input of an auto-zero signal or a signal for automatic zero point adjustment into a comparator [Step G]

[0241] P-phase readout in the imaging device, the charge accumulating electrode 24 22 and movement of a charge to the first electrode 212 [Step H]

[0242] D-phase readout in the imaging device, the charge accumulating electrode 24 22 and movement of a charge to the first electrode 212.

[0243] Based on a correlated double scan (CDS), the difference between the P-phase readout in [step C] and the D-phase readout in [step D] is a signal from the imaging device that is applied to the charge accumulating electrode 24 21 and the difference between the P-phase readout in [Step G] and the D-phase readout in [Step H] is a signal from the imaging device applied to the charge accumulating electrode 24 22 corresponds.

[0244] It is particularly worth mentioning that the operation of [Step E] can be omitted (see Fig. 55B). Furthermore, the operation of [Step F] may be omitted, and in this case [Step G] may also be omitted (see Fig. 55C). The difference between the P-phase readout in [Step C] and the D-phase readout in [Step D] is a signal from the imaging device applied to the charge accumulating electrode 24 21 and the difference between the D-phase readout in [Step D] and the D-phase readout in [Step H] is a signal from the imaging device applied to the charge accumulating electrode 24 22 corresponds.

[0245] It is particularly worth mentioning that an operation of the imaging device block that Fig. 54 is not limited to the operation described above, and it is also possible that the operation of the imaging device block is similar to the operation of the imaging device block including four imaging devices described hereinabove in connection with Working Example 2.

[0246] Of course, the various modifications of the working examples described above can be suitably used for other working examples.

[0247] Although in the working examples, electrons are the signal charges and the conductivity type of a photoelectric conversion layer formed on a semiconductor substrate is n-type, it is also possible to use it for a solid-state image sensor in which positive holes are the signal charges. In this case, it is sufficient if the semiconductor regions contain semiconductor regions of opposite conductivity types, and it is sufficient if the conductivity type of the photoelectric conversion layer formed on a semiconductor substrate is p-type.

[0248] Furthermore, although the working examples have been described taking as an example a case where the present disclosure is applied to a CMOS-type solid-state image sensor in which unit pixels that detect a signal charge corresponding to an incident light amount as a physical quantity are arranged in rows and columns, an application of the present disclosure is not limited to a CMOS-type solid-state image sensor, and it is also possible to apply the present disclosure to a CCD-type solid-state image sensor. In the latter case, a signal charge is transferred by means of a vertical transfer register of the CCD-type structure, transferred in a horizontal direction by means of a horizontal transfer register, and amplified to output a pixel signal (image signal).Furthermore, the application of the present disclosure is not generally limited to column-type solid-state image sensors in which pixels are arranged in a two-dimensional matrix and a column signal processing circuit is arranged for each pixel column. In some cases, it is also possible to omit the selection transistor.

[0249] Furthermore, the imaging device and the stacked-type imaging device of the present disclosure can be applied not only to a solid-state image sensor that detects and images a distribution of the incident light quantity of visible light, but also to a solid-state image sensor that images a distribution of the incident light quantity of infrared rays, X-rays, or particles. Furthermore, in a broad sense, the imaging device and the stacked-type imaging device of the present disclosure can be applied generally to solid-state image sensors (physical quantity distribution detection devices) such as fingerprint sensors that detect and image a distribution of any other physical quantity such as pressure or capacitance.

[0250] Furthermore, the application of the imaging device and the stacked-type imaging device of the present disclosure is not limited to a solid-state image sensor that sequentially scans unit pixels in an imaging region to read out a pixel signal from each unit pixel. The imaging device and the stacked-type imaging device of the present disclosure can also be applied to an XY address type solid-state image sensor that selects any pixel in a unit of a pixel and reads out a pixel signal in a unit of a pixel from the selected pixel. The solid-state image sensor may have an embodiment formed as a chip, or may have a form of a module in which an imaging region and a driving circuit or an optical system are packaged together to have an imaging function.

[0251] Furthermore, the application of the imaging device and the stacked-type imaging device of the present disclosure is not limited to a solid-state image sensor and can also be used for an imaging device. Here, an imaging device refers to an electronic device with an imaging function, such as a camera system of a digital still camera or a video camera, or a portable telephone device. Imaging devices sometimes have an embodiment of a module integrated into an electronic device; that is, an imaging device sometimes includes a camera module.

[0252] An example in which a solid-state image sensor 201 including the imaging device and the stacked-type imaging device of the present disclosure is used in an electronic device (camera) 200 is shown as a conceptual diagram in Fig. 56. The electronic device 200 includes a solid-state image sensor 201, an optical lens 210, a diaphragm device 211, a drive circuit 212, and a signal processing circuit 213. The optical lens 210 forms an image of imaging light (incident light) on an imaging plane of the solid-state image sensor 201. As a result, signal charge is accumulated in the solid-state image sensor 201 for a predetermined period of time. The diaphragm device 211 controls the light application period and the light blocking period of the solid-state image sensor 201. The drive circuit 212 provides a drive signal for controlling a transfer operation, etc., of the solid-state image sensor 201 and a diaphragm operation of the diaphragm device 211. In response to a drive signal (a timing signal) provided by the drive circuit 212, signal transmission of the solid-state image sensor 201 is performed.The signal processing circuit 213 performs various signal processes. A video signal for which signal processing has been performed is stored in a storage medium such as a memory or output to a monitor. In the electronic device 200 as described above, since refinement of the pixel size and improvement of the transmission efficiency of the solid-state image sensor 201 can be achieved, the electronic device 200 in which improvement of the pixel characteristics is achieved can be obtained. The electronic device 200 for which the solid-state image sensor 201 can be used is not limited to a camera and can be used for an imaging device such as a camera module for a mobile device such as a digital still camera or a portable telephone device.

[0253] The technology according to the present disclosure (present technology) can be used for various products. For example, the technology according to the present disclosure can be implemented in a device installed in any type of moving body, such as, for example, an automobile, an electric car, a hybrid electric car, a motorcycle, a bicycle, any personal mobility device, an aircraft, a drone, a ship, or a robot.

[0254] Fig. 58 is a block diagram illustrating an example of a schematic configuration of a vehicle control system as an example of a moving body control system to which the technology according to an embodiment of the present disclosure can be applied.

[0255] The vehicle control system 12000 comprises a plurality of electronic control units that are interconnected via a communication network 12001. In the Fig. 58, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external vehicle information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output section 12052, and an interface (I / F) 12053 of the vehicle-mounted network are illustrated.

[0256] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for a driving force generating device for generating a driving force of the vehicle, such as an internal combustion engine, a drive motor, or the like, a driving force transmitting mechanism for transmitting the driving force to wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.

[0257] The body system control unit 12020 controls the operation of various types of devices provided on a vehicle body according to various types of programs. For example, the body system control unit 12020 serves as a control device for a keyless entry system, a smart key system, an automatic window device, or various types of lights such as a headlight, a taillight, a brake light, a turn signal, a fog light, or the like. In this case, radio waves transmitted from a mobile device as an alternative to a key or signals from various types of switches can be input to the body system control unit 12020.The body system control unit 12020 receives these input radio waves or signals and controls a door locking device, the automatic window device, the lights or the like of the vehicle.

[0258] The vehicle-external information detection unit 12030 detects information about the external environment of the vehicle including the vehicle control system 12000. For example, the vehicle-external information detection unit 12030 is connected to an imaging section 12031. The vehicle-external information detection unit 12030 causes the imaging section 12031 to capture an image of the vehicle's external environment and receives the captured image. The vehicle-external information detection unit 12030 can perform processing for detecting an object such as a person, a car, an obstacle, a traffic sign, a sign on a road surface, or the like, or processing for detecting a distance thereto based on the received image.

[0259] The imaging section 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging section 12031 can also output the electrical signal as an image or can output the electrical signal as information about a measured distance. Furthermore, the light received by the imaging section 12031 can be visible light or invisible light such as infrared rays or the like.

[0260] The in-vehicle information detection unit 12040 detects information about or from the interior of the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver condition detection section 12041 that detects the condition of a driver. The driver condition detection section 12041 includes, for example, a camera that records the driver. The in-vehicle information detection unit 12040 can calculate a driver's fatigue level or a driver's concentration level, or can determine whether the driver is dozing, based on detection information input from the driver condition detection section 12041.

[0261] The microcomputer 12051 may calculate a control target value for the driving force generating device, the steering mechanism, or the braking device based on the information about the interior or exterior of the vehicle obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040, and may output a control command to the drive system control unit 12010.For example, the microcomputer 12051 may perform cooperative control intended to realize functions of an advanced driver assistance system (ADAS) whose functions include collision avoidance or impact mitigation for the vehicle, following travel based on a following distance, constant speed travel, collision warning of the vehicle, lane deviation warning of the vehicle, or the like.

[0262] In addition, the microcomputer 12051 can perform cooperative control intended for automatic driving, which makes the vehicle drive autonomously without depending on driver intervention or the like, by controlling the driving force generating device, the steering mechanism, the braking device, or the like based on the information about the external environment or the interior of the vehicle, which information is obtained by the outside-vehicle information detecting unit 12030 or the inside-vehicle information detecting unit 12040.

[0263] The microcomputer 12051 can also output a control command to the body system control unit 12020 based on the information about the external environment of the vehicle obtained by the external information detection unit 12030. For example, the microcomputer 12051 can execute cooperative control intended to prevent glare by controlling the headlight to switch from high beam to low beam according to the position of a preceding vehicle or an oncoming vehicle detected by the external information detection unit 12030.

[0264] The sound / image output section 12052 transmits an output signal of a sound and / or an image to an output device that can optically or acoustically convey information to an occupant of the vehicle or the external environment of the vehicle. In the example of Fig. 58, a speaker 12061, a display section 12062, and an instrument panel 12063 are indicated as the output device. The display section 12062 may include, for example, an in-vehicle display and / or a head-up display.

[0265] Fig. 59 is a diagram illustrating an example of an installation position of the imaging section 12031.

[0266] In Fig. 59, imaging section 12031 includes imaging sections 12101, 12102, 12103, 12104 and 12105.

[0267] The imaging sections 12101, 12102, 12103, 12104, and 12105 are arranged at positions on, for example, a front end, side mirrors, a rear bumper, and a rear door of the vehicle 12100, as well as a position on an upper part of a windshield inside the vehicle. The imaging section 12101 provided at the front end and the imaging section 12105 provided at the upper part of the windshield inside the vehicle predominantly obtain an image from the front of the vehicle 12100. The imaging sections 12102 and 12103 provided at the side mirrors predominantly obtain an image from the sides of the vehicle 12100. The imaging section 12104 provided at the rear bumper or rear door predominantly obtains an image from the rear of the vehicle 12100.The imaging section 12105 provided at the upper part of the windshield inside is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane or the like.

[0268] Furthermore, Fig. 59 shows an example of photographing areas of the imaging sections 12101 to 12104. An imaging area 12111 represents the imaging area of ​​the imaging section 12101 provided at the front end. Imaging areas 12112 and 12113 represent the imaging areas of the imaging sections 12102 and 12103 provided at the side mirrors, respectively. An imaging area 12114 represents the imaging area of ​​the imaging section 12104 provided at the rear bumper or the rear door. For example, a bird's-eye view image of the vehicle 12100 as seen from above is obtained by superimposing image data imaged by the imaging sections 12101 to 12104, for example.

[0269] At least one of the imaging sections 12101 to 12104 may have a function for obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element that includes pixels for detecting phase differences.

[0270] For example, the microcomputer 12051 may determine a distance to each three-dimensional object within the imaging areas 12111 to 12114 and a temporal change of the distance (relative speed with respect to the vehicle 12100) on the basis of the distance information obtained from the imaging sections 12101 to 12104, and thereby extract, in particular, as a preceding vehicle, a nearest three-dimensional object that is located on a travel path of the vehicle 12100 and that travels at a predetermined speed (for example, equal to 0 km / h or higher) in substantially the same direction as the vehicle 12100.Furthermore, the microcomputer 12051 can predetermine a following distance to be maintained from a preceding vehicle and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), or the like. Consequently, it is possible to perform cooperative control for automatic driving, which allows the vehicle to drive autonomously without depending on the driver's intervention or the like.

[0271] For example, the microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large vehicle, a pedestrian, a telephone pole, and other three-dimensional objects based on the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional objects to automatically avoid an obstacle. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually recognize and obstacles that are difficult for the driver of the vehicle 12100 to visually recognize. The microcomputer 12051 then determines a collision risk that indicates a risk of collision with each obstacle.In a situation where the collision risk is equal to or higher than a set value, and thus a possibility of a collision exists, the microcomputer 12051 issues a warning to the driver via the speaker 12061 or the display section 12062 and performs forced deceleration or evasive steering via the drive system control unit 12010. The microcomputer 12051 can thus assist driving to avoid a collision.

[0272] At least one of the imaging sections 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 may detect a pedestrian by determining whether or not there is a pedestrian in captured images from the imaging sections 12101 to 12104. Such detection of a pedestrian is performed, for example, by a procedure for extracting characteristic points in the captured images from the imaging sections 12101 to 12104 as infrared cameras and a procedure for determining whether or not it is the pedestrian by performing pattern matching processing on a series of characteristic points indicating the contour of the object.When the microcomputer 12051 determines that there is a pedestrian in the captured images of the imaging sections 12101 to 12104 and thus detects the pedestrian, the audio / video output section 12052 controls the display section 12062 to display a quadrangular contour line for highlighting, superimposed on the detected pedestrian. The audio / video output section 12052 can also control the display section 12062 to display an icon or the like representing the pedestrian at a desired position.

[0273] For example, the technology according to the present disclosure may further be used for a system for endoscopic surgery.

[0274] Fig. 60 is a view illustrating an example of a schematic configuration of an endoscopic surgery system to which the technology according to an embodiment of the present disclosure (present technology) can be applied.

[0275] In Fig. 60 illustrates a state in which a surgeon (doctor) 11131 is using an endoscopic surgery system 11000 to perform a surgical procedure on a patient 11132 on a patient bed 11133. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy treatment device 11112, a support arm device 11120 supporting the endoscope 11100 thereon, and a trolley 11200 on which various endoscopic surgery devices are mounted.

[0276] The endoscope 11100 includes a lens tube 11101 having a predetermined length portion from its distal end for insertion into a body cavity of the patient 11132, and a camera head 11102 connected to a proximal end of the lens tube 11101. In the illustrated example, the endoscope 11100 is shown as including a rigid endoscope with the hard-type lens tube 11101. However, the endoscope 11100 may otherwise be incorporated as a flexible endoscope with the flexible-type lens tube 11101.

[0277] At its distal end, the lens tube 11101 has an opening into which an object lens is fitted. A light source device 11203 is connected to the endoscope 11100 such that light generated by the light source device 11203 is introduced into a distal end of the lens tube 11101 through a light guide extending within the lens tube 11101 and irradiated toward an observation target in a body cavity of the patient 11132 through the object lens. It is noted that the endoscope 11100 may be a straight-view endoscope, an oblique-view endoscope, or a side-view endoscope.

[0278] An optical system and an image pickup element are provided within the camera head 11102 such that reflected light (observation light) from the observation target is converged or collected by the optical system onto the image pickup element. The observation light is photoelectrically converted by the image pickup element to generate an electrical signal corresponding to the observation light, namely, an image signal corresponding to an observation image. The image signal is transmitted as raw data to a CCU 11201.

[0279] The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU), or the like, and integrally controls an operation of the endoscope 11100 and a display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processes for displaying an image based on the image signal, such as, for example, a development process (demosaicing process).

[0280] The display device 11202 displays thereon an image based on an image signal for which the image processes have been performed by the CCU 11201, under a control of the CCU 11201.

[0281] The light source device 11203 includes a light source, such as a light-emitting diode (LED), and supplies irradiation light to the endoscope 11100 when imaging a surgical area.

[0282] An input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various types of information or instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction or the like to change an image acquisition condition (a type of irradiation light, a magnification, a focal length, or the like) by the endoscope 11100.

[0283] A treatment instrument control device 11205 controls the operation of the energy treatment device 11112 for cauterizing or cutting tissue, closing a blood vessel, or the like. To ensure the field of view of the endoscope 11100 and to ensure the working space for the surgeon, a pneumoperitoneum device 11206 introduces gas into a body cavity of the patient 11132 through the pneumoperitoneum tube 11111 to expand the body cavity. A recording device 11207 is a device that can record various types of information related to a surgical procedure. A printer 11208 is a device that can print various types of information related to a surgical procedure in various forms such as text, images, or graphics.

[0284] It is particularly noteworthy that the light source device 11203, which supplies irradiation light to the endoscope 11100 when imaging a surgical area, may include a white light source, for example, an LED, a laser light source, or a combination thereof. When a white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and output timing for each color (each wavelength) can be controlled with a high degree of accuracy, adjustment of the white balance of an acquired image from the light source device 11203 can be performed. Furthermore, in this case, if laser beams from the respective RGB laser light sources are irradiated onto an observation target in a time-division multiplex manner, control of the image pickup elements of the camera head 11102 is controlled in synchronization with the irradiation timing.Then, images corresponding individually to the R, G, and B colors can also be recorded in a time-division multiplex manner. This method makes it possible to obtain a color image even if no color filters are provided for the image pickup element.

[0285] Furthermore, the light source device 11203 can be controlled to change the intensity of emitted light every predetermined time. By controlling the drive of the image pickup element of the camera head 11102 in synchronization with the timing of the change in light intensity to capture images in a time-division multiplexed manner, and combining or synthesizing the images, a high-dynamic-range image can be generated without underdeveloped, blocked shadows and overexposed highlights.

[0286] Furthermore, the light source device 11203 may be configured to provide light of a predetermined wavelength band suitable for special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light of a narrow band compared with irradiation light in ordinary observation (namely, white light), narrow-band observation (narrow-band imaging) is performed to image a predetermined tissue, such as a blood vessel or a surface region of the mucosal membrane, with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescent light generated by irradiation with excitation light.In fluorescence observation, it is possible to perform observation of fluorescent light from a body tissue by irradiating excitation light onto the body tissue (autofluorescence observation), or to obtain a fluorescent light image by locally injecting a reagent such as indocyanine green (ICG) into a body tissue and irradiating excitation light corresponding to a fluorescence wavelength of the reagent onto the body tissue. The light source device 11203 can be configured to provide such narrow-band light and / or excitation light suitable for special light observation as described above.

[0287] Fig. 61 is a block diagram showing an example of a functional configuration of the camera head 11102 and the CCU 11201 used in Fig. 60 are shown.

[0288] The camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other for communication by a transmission cable 11400.

[0289] The lens unit 11401 is an optical system provided at a junction with the lens barrel 11101. Observation light received from a distal end of the lens barrel 11101 is guided to the camera head 11102 and inserted into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses, including a zoom lens and a focus lens.

[0290] The number of image pickup units included in the image pickup unit 11402 may be one (single-panel type) or a plurality (multi-panel type). For example, when the image pickup unit 11402 is configured as a multi-panel type, image signals corresponding to respective R, G, and B are generated by the image pickup elements, and the image signals can be synthesized to obtain a color image. The image pickup unit 11402 may also be configured to include a pair of image pickup elements to acquire respective right-eye and left-eye image signals suitable for three-dimensional (3D) display. If 3D display is performed, then the depth of a living body tissue in a surgical area can be more accurately recognized by the surgeon 11131.It is particularly noted that when the image pickup unit 11402 is configured such as that of a stereoscopic type, a plurality of systems of lens units 11401 are provided corresponding to the individual image pickup elements.

[0291] Furthermore, the image pickup unit 11402 does not necessarily have to be provided on the camera head 11102. For example, the image pickup unit 11402 may be provided immediately behind the objective lens within the lens barrel 11101.

[0292] The control unit 11403 includes an actuator and, under the control of the camera head control unit 11405, moves the zoom lens and the focus lens of the lens unit 11401 by a predetermined distance along an optical axis. Consequently, the magnification and focus of a captured image can be appropriately adjusted by the image capture unit 11402.

[0293] The communication unit 11404 includes a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits an image signal acquired from the image acquisition unit 11402 to the CCU 11201 as raw data via the transmission cable 11400.

[0294] In addition, the communication unit 11404 receives a control signal for controlling a drive of the camera head 11102 from the CCU 11201 and provides the control signal to the camera head control unit 11405. The control signal contains information related to image capture conditions, such as, for example, information that a frame rate of a captured image is determined, information that an exposure value is determined during image capture, and / or information that a magnification and focus of a captured image are determined.

[0295] It is particularly noteworthy that image acquisition conditions such as frame rate, exposure value, magnification, or focus can be specified by the user or automatically adjusted by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 integrates an automatic exposure (AE) function, an autofocus (AF) function, and an automatic white balance (AWB) function.

[0296] The camera head control unit 11405 controls a control of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0297] The communication unit 11411 contains a communication device for transmitting and receiving various types of information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 to the camera head via the transmission cable 11400.

[0298] In addition, the communication unit 11411 transmits a control signal for controlling a drive of the camera head 11102 to the camera head 11102. The image signal and the control signal may be transmitted by means of electrical communication, optical communication, or the like.

[0299] The image processing unit 11412 performs various image processes for an image signal in the form of raw data transmitted thereto from the camera head 11102.

[0300] The control unit 11413 performs various types of control regarding image acquisition of a surgical area or the like by the endoscope 11100 and display of a captured image obtained by image acquisition of the surgical area or the like. For example, the control unit 11413 generates a control signal to control the drive of the camera head 11102.

[0301] Furthermore, based on an image signal for which image processing has been performed by the image processing unit 11412, the control unit 11413 controls the display device 11202 to display a captured image in which the area of ​​a surgical operation or the like is depicted. Then, the control unit 11413 can recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize a surgical instrument such as forceps, a specific area of ​​a living body, bleeding, haze when the energy treatment device 11112 is used, and so on by detecting the shape, color, and so on of edges of objects included in a captured image.The control unit 11413, when controlling the display device 11202 to display a captured image, can cause various types of surgical support information to be displayed in an overlapping manner with an image of the surgical area using a recognition result. When the surgical support information is displayed in an overlapping manner and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can continue the surgical operation safely.

[0302] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable suitable for communication of electrical signals, an optical fiber suitable for optical communication, or a composite cable suitable for both electrical and optical communication.

[0303] While in the illustrated example communication is carried out by means of wired communication using the transmission cable 11400, here the communication between the camera head 11102 and the CCU 11201 can be carried out by means of wireless communication.

[0304] It is particularly noted here that, although the system for endoscopic surgery has been described as an example, the technology according to the present disclosure can be used for, for example, a system for microscopic surgery and so on.

[0305] It is to be noted that the present disclosure may also have such configurations as described below. < <bildgebungsvorrichtung>>

[0306] [A01] An imaging device comprising: a first electrode; a charge accumulating electrode arranged at a distance from the first electrode, an insulating electrode arranged at a distance from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer disposed therebetween, and a second electrode formed on the photoelectric conversion layer, wherein the insulation electrode comprises a first insulation electrode and a second insulation electrode arranged at a distance from the first insulation electrode, and the first insulating electrode is arranged between the first electrode and the second insulating electrode.

[0307] [A02] The imaging device according to [A01], wherein the first insulation electrode has a potential of a fixed value V ES-1 and the second insulating electrode has a potential of another fixed value V ES-2 has.

[0308] [A03] The imaging device according to [A01], wherein the first insulation electrode has a potential different from a fixed value V ES-1 out, and the second insulation electrode has a potential of a fixed value V ES-2 has.

[0309] [A04] The imaging device according to [A02] or [A03], wherein in a case where a charge to be accumulated is electrons, V ES-1 > V ES-2 is satisfied, but in a case where a charge to be accumulated is positive holes, V ES-1 < V ES-2 is fulfilled.

[0310] [A05] The imaging device according to [A02] or [A03], wherein V ES-2 = V ES-1 is fulfilled. <<Festkörper-Bildsensor: erste Ausführungsform> >

[0311] [A06] A solid-state image sensor comprising: a plurality of imaging device blocks each containing P × Q (where P ≥ 2 and Q ≥ 1) imaging devices such that P imaging devices are arranged in a first direction and Q imaging devices are arranged in a second direction different from the first direction, wherein each imaging device includes a first electrode, a charge accumulating electrode arranged at a distance from the first electrode, an insulating electrode arranged at a distance from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer disposed therebetween, and a second electrode formed on the photoelectric conversion layer, the insulation electrode comprises a first insulation electrode, a second insulation electrode and a third insulation electrode, the first isolation electrode is arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side in the imaging device block at least along the second direction, the second insulation electrode is arranged between imaging devices in the imaging device block, and the third insulation electrode is arranged between imaging device blocks.

[0312] [A07] The solid-state image sensor according to [A06], wherein the third isolation electrode is shared by adjacent imaging device blocks.

[0313] [A08] The solid-state image sensor according to [A06] or [A07], wherein the first isolation electrode is arranged adjacent to, but at a distance from, the first electrode between the imaging devices placed side by side along the second direction in the imaging device block, and the second isolation electrode is arranged between imaging devices placed side by side along the first direction, and is arranged at a distance from the first isolation electrode between the imaging devices placed side by side along the second direction.

[0314] [A09] The solid-state image sensor according to [A08], wherein the second isolation electrode and the third isolation electrode are connected to each other.

[0315] [A10] The solid-state image sensor according to [A06] or [A07], wherein the first insulation electrode is arranged adjacent to, but at a distance from, the first electrode between the imaging devices placed side by side in the imaging device block along the second direction, and further arranged adjacent to, but at a distance from, the first electrode between imaging devices placed side by side along the first direction, and the second insulation electrode is arranged at a distance from the first insulation electrode between the imaging devices placed side by side along the second direction, and further arranged at a distance from the first insulation electrode between the imaging devices placed side by side along the first direction.

[0316] [A11] The solid-state image sensor according to [A10], wherein the second isolation electrode and the third isolation electrode are connected to each other.

[0317] [A12] The solid-state image sensor according to [A11], wherein the first isolation electrode has a potential of a fixed value V ES-1 and the second insulating electrode and the third insulating electrode also have a potential of a fixed value V ES-2 have.

[0318] [A13] The solid-state image sensor according to [A11], wherein the first isolation electrode has a potential different from a fixed value V ES-1 out, and the second insulation electrode and the third insulation electrode have a potential of a fixed value V ES-2 have.

[0319] [A14] The solid-state image sensor according to [A12] or [A13], wherein in a case where a charge to be accumulated is electrons, V ES-1 > V ES-2 is satisfied, but in a case where a charge to be accumulated is positive holes, V ES-1 < V ES-2 is fulfilled.

[0320] [A15] The solid-state image sensor according to [A12] or [A13], where V ES-2 = V ES-1 is fulfilled.

[0321] [A16] The solid-state image sensor according to any one of [A06] to [A15], wherein the first electrode is shared by P × Q imaging devices constituting the imaging device block.

[0322] [A17] The solid-state image sensor according to any one of [A06] to [A16], wherein P = 2 and Q = 2 are satisfied.

[0323] [A18] The solid-state image sensor according to any one of [A01] to [A17], further comprising: a semiconductor substrate wherein a photoelectric conversion region is arranged above the semiconductor substrate.

[0324] [A19] The solid-state image sensor according to [A01] to [A18], further comprising: a transfer controlling electrode disposed between the first electrode and the charge accumulating electrode at a distance from the first electrode and the charge accumulating electrode, and disposed opposite to the photoelectric conversion layer with an insulating film interposed therebetween.

[0325] [A20] The solid-state image sensor according to any one of [A01] to [A19], wherein the charge accumulating electrode comprises a plurality of charge accumulating electrode segments.

[0326] [A21] The solid-state image sensor according to any one of [A01] to [A20], wherein the charge accumulating electrode has a larger size than that of the first electrode.

[0327] [A22] The solid-state image sensor according to any one of [A01] to [A21], wherein the first electrode extends in an opening provided in the insulating layer and is connected to the photoelectric conversion layer.

[0328] [A23] The solid-state image sensor according to any one of [A01] to [A21], wherein the photoelectric conversion layer extends in an opening provided in the insulating layer and is connected to the first electrode.

[0329] [A24] The solid-state image sensor according to [A23], wherein an edge region of an upper side of the first electrode is covered with the insulating layer, the first electrode is exposed on a bottom surface of the opening and, when a surface of the insulating layer in contact with the top surface of the first electrode is a first surface and a surface of the insulating layer in contact with a portion of the photoelectric conversion layer opposite to the charge accumulating electrode is a second surface, a side surface of the opening has a slope extending from the first surface to the second surface.

[0330] [A25] The solid-state image sensor according to [A24], wherein the side surface of the opening having the slope extending from the first surface toward the second surface is positioned on the side of the charge accumulating electrode. <<Steuerung eines Potentials einer ersten Elektrode und einer Ladung akkumulierenden Elektrode> >

[0331] [A26] The solid-state image sensor according to any one of [A01] to [A25], further comprising: a control region provided on a semiconductor substrate and containing a drive circuit, wherein the first electrode and the charge accumulating electrode are connected to the drive circuit, during a charge accumulation period from the control circuit a potential V 11 applied to the first electrode, a potential V 12 is applied to the charge accumulating electrode and charge is accumulated in the photoelectric conversion layer, during a charge transfer period from the control circuit a potential V 21 applied to the first electrode, a potential V 22 is applied to the charge accumulating electrode and the charge accumulated in the photoelectric conversion layer is read out via the first electrode to the control region and in the case where the potential of the first electrode is higher than that of the second electrode, V12≥V11 and V22 <V21 are met, but in the case where the potential of the first electrode is lower than that of the second electrode, V12≥V11 and V22 <V21 are fulfilled. <<Segment einer Ladung akkumulierenden Elektrode> >

[0332] [A27] The solid-state image sensor according to any one of [A01] to [A19], wherein the charge accumulating electrode comprises a plurality of charge accumulating electrode segments.

[0333] [A28] The solid-state image sensor according to [A27], wherein, in the case where the potential of the first electrode is higher than that of the second electrode, during a charge transfer period, the potential applied to the segment of a charge accumulating electrode located closest to the first electrode is higher than the potential applied to the segment of a charge accumulating electrode located farthest from the first electrode, and in the case where the potential of the first electrode is lower than that of the second electrode, during a charge transfer period the potential applied to the segment of a charge accumulating electrode positioned closest to the first electrode is lower than the potential applied to the segment of a charge accumulating electrode positioned furthest from the first electrode.

[0334] [A29] The solid-state image sensor according to any one of [A01] to [A28], wherein at least one floating diffusion layer and one amplification transistor forming a control region are provided on a semiconductor substrate and the first electrode is connected to the floating diffusion layer and a gate region of the amplification transistor.

[0335] [A30] The solid-state image sensor according to [A29], wherein further comprising a reset transistor and a selection transistor forming the control region provided on the semiconductor substrate, the floating diffusion layer is connected to one of the source / drain regions of the reset transistor and one of source / drain regions of the amplification transistor is connected to one of source / drain regions of the selection transistor and the other of the source / drain regions of the selection transistor is connected to a signal line.

[0336] [A31] The solid-state image sensor according to any one of [A01] to [A30], wherein light is incident from the second electrode side and a shading layer is formed on a light incident side rather close to the second electrode.

[0337] [A32] The solid-state image sensor according to any one of [A01] to [A30], wherein light is incident from the second electrode side and light is not incident on the first electrode.

[0338] [A33] The solid-state image sensor according to [A32], wherein a shading layer is formed above the first electrode and on a light incident side rather close to the second electrode.

[0339] [A34] The solid-state image sensor according to [A32], wherein an on-chip microlens is provided above the charge accumulating electrode and the second electrode and Light incident on the on-chip microlens is focused on the charge accumulating electrode. <<Bildgebungsvorrichtung: erste Konfiguration> >

[0340] [B01] The solid-state image sensor according to any one of [A01] to [A34], wherein the photoelectric conversion region comprises N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge accumulating electrode comprises N segments of a charge accumulating electrode, an n-th (where n = 1, 2, 3, ..., N) segment of a photoelectric conversion region includes an n-th segment of a charge accumulating electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode and the segments of an insulating layer have a thickness that gradually changes over a range from a first segment of a photoelectric conversion region to an N-th segment of a photoelectric conversion region. <<Bildgebungsvorrichtung: zweite Konfiguration> >

[0341] [B02] The solid-state image sensor according to any one of [A01] to [A34], wherein the photoelectric conversion region comprises N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge accumulating electrode comprises N segments of a charge accumulating electrode, an n-th (where n = 1, 2, 3, ..., N) segment of a photoelectric conversion region includes an n-th segment of a charge accumulating electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode and the segments of a photoelectric conversion layer have a thickness that gradually changes over a range from a first segment of a photoelectric conversion region to an N-th segment of a photoelectric conversion region. <<Bildgebungsvorrichtung: dritte Konfiguration> >

[0342] [B03] The solid-state image sensor according to any one of [A01] to [A34], wherein the photoelectric conversion region comprises N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge accumulating electrode comprises N segments of a charge accumulating electrode, an n-th (where n = 1, 2, 3, ..., N) segment of a photoelectric conversion region includes an n-th segment of a charge accumulating electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode and a material forming the segment of an insulating layer is different in adjacent segments of a photoelectric conversion region. <<Bildgebungsvorrichtung: vierte Konfiguration> >

[0343] [B04] The solid-state image sensor according to any one of [A01] to [A34], wherein the photoelectric conversion region is configured from N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge accumulating electrode comprises N segments of a charge accumulating electrode arranged at a distance from one another, an n-th (where n = 1, 2, 3, ..., N) segment of a photoelectric conversion region includes an n-th segment of a charge accumulating electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode, and a material forming the segment of a charge accumulating electrode is different in adjacent segments of a photoelectric conversion region. <<Bildgebungsvorrichtung: fünfte Konfiguration> >

[0344] [B05] The solid-state image sensor according to any one of [A01] to [A34], wherein the photoelectric conversion region comprises N (where N ≥ 2) segments of a photoelectric conversion region, the photoelectric conversion layer comprises N segments of a photoelectric conversion layer, the insulating layer comprises N segments of an insulating layer, the charge accumulating electrode comprises N segments of a charge accumulating electrode arranged at a distance from one another, an n-th (where n = 1, 2, 3, ..., N) segment of a photoelectric conversion region includes an n-th segment of a charge accumulating electrode, an n-th segment of an insulating layer, and an n-th segment of a photoelectric conversion layer, the segment of a photoelectric conversion region with a higher value of n is positioned further away from the first electrode and an area of ​​the segment of a charge accumulating electrode gradually decreases over a range from a first segment of a photoelectric conversion region to an N-th segment of a photoelectric conversion region. <<Bildgebungsvorrichtung: sechste Konfiguration> >

[0345] [B06] The solid-state image sensor according to any one of [A01] to [A34], wherein, when a stacking direction of the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer is a Z direction and a direction away from the first electrode is an X direction, a cross-sectional area of ​​a stacked region when the stacked region in which the charge accumulating electrode, the insulating layer, and the photoelectric conversion layer are stacked is cut along a virtual YZ plane changes depending on a distance from the first electrode. <<Bildgebungsvorrichtung des gestapelten Typs> >

[0346] [C01] A stacked type solid-state image sensor comprising: at least one imaging device according to any one of [A01] to [B06]. <<Festkörper-Bildsensor: zweite Ausführungsform> >

[0347] [D01] A solid-state image sensor comprising: a stacked type imaging device including at least one imaging device according to any one of [A01] to [B06].

[0348] [D02] The solid-state image sensor according to [D01], wherein at least one lower imaging device is provided below the imaging device and a wavelength of light to be received by the imaging device and a wavelength of light to be received by the lower imaging device are different from each other.

[0349] [D03] The solid-state image sensor according to [D02], wherein two lower imaging devices are stacked.

[0350] [D04] The solid-state image sensor according to [D02] or [D03], wherein lower imaging device blocks are provided in two layers.

[0351] [D05] The solid-state image sensor according to any one of [D01] to [D04], wherein a plurality of imaging devices constituting the lower imaging device block include a shared floating diffusion layer. [List of reference symbols]

[0352] 10 ... imaging device block, 11 ... imaging device, 13, 15 ... imaging device, 201, 202, 203 ... segment of a photoelectric conversion region, 21 ... first electrode, 22 ... second electrode, 23 ... photoelectric conversion layer, 23' ... region of a photoelectric conversion layer positioned between adjacent imaging devices, 23 DN ... lower layer of a photoelectric conversion layer, 23 UP ... upper layer of a photoelectric conversion layer, 24 ... charge accumulating electrode, 24A, 24B, 24C ... segment of a charge accumulating electrode, 25, 25A, 25B ... a transfer controlling electrode (charge transfer electrode), 26 ... charge discharging electrode, 30, 35 ... insulating electrode, 31A ... first insulating electrode, 31B ... second insulating electrode, 32 ... third insulating electrode, 33 ... pad region, 34 ... via hole, 41 ... n-type semiconductor region constituting the second imaging device, 43 ... n-type semiconductor region constituting a third imaging device, 42, 44, 73 ... p + -layer, 45 ... gate region of a transfer transistor, 46 ... gate region of a transfer transistor, , 51 ... gate region of a reset transistor TR1 rst , 51A ... Channel formation region of the reset transistor TR1 rst , 51B, 51C ... Source / drain region of the reset transistor TR1 rst , 52 ... Gate region of an amplifying transistor TR1 amp , 52A ... channel formation region of the amplification transistor TR1 amp , 52B, 52C ... Source / drain region of the amplification transistor TR1 amp , 53 ... Gate region of a selection transistor TR1 sel , 53A ... Channel formation region of the selection transistor TR1 sel , 53B, 53C ... Source / drain region of the selection transistor TR1 sel , FD1, FD2, FD3, 45C, 46C... floating diffusion layer, TR1 amp ... amplifying transistor, TR1 rst ... Reset transistor, TR1 sel ... selection transistor, TR2 trs ... transfer transistor, TR2 rst ... reset transistor, TR2 amp ... amplifying transistor, TR2 sel ... selection transistor, TR3 trs ... transfer transistor, TR3 rst ... reset transistor, TR3 amp ... amplification transistor, TR3 sel ... selection transistor, V DD ... power supply, RST1, RST2, RST3 ... reset line, SEL1, SEL2, SEL3 ... select line, 117, VSL1, VSL2, VSL3 ... signal line, TG2, TG3 ... transmission gate line, V OA , V OB , V OT , V OU ... wiring, 61 ... contact hole region, 62 ... wiring layer, 63, 64, 641, 642, 643, 68A ... pad region, 65, 68B ... connection hole, 66, 67 ... connection region, 70 ... semiconductor substrate, 70A ... first surface (front surface) of a semiconductor substrate, 70B ... second surface (back surface) of a semiconductor substrate, 71 ... device isolation region, 72 ... oxide film, 74 ... HfO2 film, 75 ... insulating film, 76 ... interlayer insulating layer, 77, 78, 81 ... interlayer insulating layer, 82 ... insulating layer, 82' ... region between adjacent imaging devices, 82p ... first surface of an insulating layer, 82q ... second surface of an insulating layer, 83 ... Protective layer, 84, 84A, 84B, 84C ... opening, 90 ... on-chip microlens, 91 ... various components of an imaging device positioned under an interlayer insulating layer, 92 ... shading layer, 100 ... solid-state image sensor, 101 ...Stacked-type imaging device, 111 ... imaging region, 112 ... vertical drive circuit, 113 ... column signal processing circuit, 114 ... horizontal drive circuit, 115 ... output circuit, 116 ... control circuit for a drive, 118 ... horizontal signal line, 200 ... electronic device (camera), 201 ... solid-state image sensor, 210 ... optical lens, 211 ... aperture device, 212 ... drive circuit, 213 ... signal processing circuit.< / bildgebungsvorrichtung> < / ladungsakkumulierungsperiode>

Claims

[1] Imaging device (11), comprising: a first electrode (21); a charge accumulating electrode (24) arranged at a distance from the first electrode (21), an insulating electrode (30) arranged at a distance from the first electrode (21) and the charge accumulating electrode (24) and surrounding the charge accumulating electrode (24), a photoelectric conversion layer (23) formed in contact with the first electrode (21) and above the charge accumulating electrode (24) with an insulating layer (82) arranged therebetween, and a second electrode (22) formed on the photoelectric conversion layer (23), wherein the insulation electrode (30) comprises a first insulation electrode (31A) and a second insulation electrode (31B) arranged at a distance from the first insulation electrode (31A), and the first insulating electrode (31A) is arranged between the first electrode (21) and the second insulating electrode (31B). [2] A driving method for the imaging device (11) according to claim 1, wherein the first insulation electrode (31A) has a potential of a fixed value V ES-1 and the second insulation electrode (31B) has a potential of another fixed value V ES-2 has. [3] A driving method for the imaging device (11) according to claim 1, wherein the first insulation electrode (31A) has a potential different from a fixed value V ES-1 out, and the second insulation electrode (31B) has a potential of a fixed value V ES-2 has. [4] A driving method according to claim 2 or 3, wherein in a case where a charge to be accumulated is electrons, V ES-1 > V ES-2 is satisfied, but in a case where a charge to be accumulated is positive holes, V ES-1 < VES-2 is fulfilled. [5] Control method according to claim 2 or 3, wherein V ES-2 = V ES-1 is fulfilled. [6] Solid-state image sensor, comprising: a plurality of imaging device blocks (10) each containing P × Q (where P ≥ 2 and Q ≥ 1) imaging devices (11) such that P imaging devices are arranged in a first direction and Q imaging devices are arranged in a second direction different from the first direction, wherein each imaging device (11) comprises a first electrode (21), a charge accumulating electrode (24) arranged at a distance from the first electrode (21), an insulating electrode (30) arranged at a distance from the first electrode (21) and the charge accumulating electrode (24) and surrounding the charge accumulating electrode (24), a photoelectric conversion layer (23) formed in contact with the first electrode (21) and above the charge accumulating electrode (24) with an insulating layer (82) arranged therebetween, and a second electrode (22) formed on the photoelectric conversion layer (23), the insulation electrode (30) comprises a first insulation electrode (31A), a second insulation electrode (31B) and a third insulation electrode (32), the first insulation electrode (30A) is arranged adjacent to, but at a distance from, the first electrode (21) between imaging devices placed side by side in the imaging device block at least along the second direction, the second insulation electrode (31B) is arranged between imaging devices in the imaging device block and the third insulation electrode (32) is arranged between imaging device blocks. [7] A solid-state image sensor according to claim 6, wherein the third isolation electrode (32) is shared by adjacent imaging device blocks. [8] A solid-state image sensor according to claim 6 or 7, wherein the first insulation electrode (31A) is arranged adjacent to, but at a distance from, the first electrode (21) between the imaging devices placed side by side in the imaging device block along the second direction, and the second insulation electrode (31B) is arranged between imaging devices placed side by side along the first direction, and is arranged at a distance from the first insulation electrode (31B) between the imaging devices placed side by side along the second direction. [9] A solid-state image sensor according to claim 8, wherein the second isolation electrode (31B9) and the third isolation electrode (32) are connected to each other. [10] A solid-state image sensor according to claim 6 or 7, wherein the first insulation electrode (31A) is arranged adjacent to, but at a distance from, the first electrode (21) between the imaging devices placed side by side along the second direction in the imaging device block, and adjacent to, but at a distance from, the first electrode (21) between imaging devices placed side by side along the first direction, and the second insulation electrode (31B) is arranged at a distance from the first insulation electrode (31A) between the imaging devices placed side by side along the second direction, and at a distance from the first insulation electrode (31A) between the imaging devices placed side by side along the first direction. [11] A solid-state image sensor according to claim 10, wherein the second isolation electrode (31B) and the third isolation electrode (32) are connected to each other. [12] A driving method for the solid-state image sensor according to claim 11, wherein the first isolation electrode (31A) has a potential of a fixed value V ES-1 and the second insulation electrode (31B) and the third insulation electrode (32) also have a potential of a fixed value V ES-2 have. [13] A driving method for the solid-state image sensor according to claim 11, wherein the first isolation electrode (31A) has a potential different from a fixed value V ES-1 out, and the second insulation electrode (31B) and the third insulation electrode (32) have a potential of a fixed value V ES-2 have. [14] A driving method according to claim 12 or 13, wherein in a case where a charge to be accumulated is electrons, V ES-1 > V ES-2 is satisfied, but in a case where a charge to be accumulated is positive holes, V ES-1 < V ES-2 is fulfilled. [15] Control method according to claim 12 or 13, wherein V ES-2 = V ES-1 is fulfilled. [16] A solid-state image sensor according to any one of claims 6 to 11, wherein the first electrode (21) is shared by P × Q imaging devices constituting the imaging device block. [17] A solid-state image sensor according to any one of claims 6 to 11, 16, wherein P = 2 and Q = 2 are satisfied. [18] Solid-state image sensor, comprising: a stacked type imaging device including at least one imaging device according to any one of claims 1, 6 to 11, 16, 17. [19] A solid-state image sensor according to claim 18, wherein at least one lower imaging device is provided below the imaging device and a wavelength of light to be received by the imaging device and a wavelength of light to be received by the lower imaging device are different from each other. [20] A solid-state image sensor according to claim 19, wherein two lower imaging devices are stacked.

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