SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Abstract

Semiconductor device (100) comprising: a semiconductor substrate (10) having an upper surface (21) and a lower surface (23), wherein a distribution of the chemical hydrogen concentration of the semiconductor substrate (10) in the depth direction has a first peak (101) of the hydrogen concentration and a second peak (102) of the hydrogen concentration which is closer to the lower surface side of the semiconductor substrate (10) than the first peak (101) of the hydrogen concentration, and wherein an intermediate donor concentration between the first peak (101) of the hydrogen concentration and the second peak (102) of the hydrogen concentration differs from a donor concentration of the upper surface side between the first peak (101) of the hydrogen concentration and the upper surface (21) of the semiconductor substrate (10) or a donor concentration of the lower surface side between the second peak (102) of the hydrogen concentration and the lower surface (23) of the semiconductor substrate (10), where the intermediate donor concentration is higher than the donor concentration of the upper surface side and the donor concentration of the lower surface side.

Description

BACKGROUND ART1. TECHNICAL FIELDThe present invention relates to a semiconductor device and a manufacturing method.2. PRIOR ARTConventionally, a technique is known in which hydrogen is implanted and diffused to a predetermined depth of a semiconductor substrate so that lattice defects are formed in the implant depth and the diffusion region bonds to hydrogen to form a donor, whereby a doping concentration can be increased (see, for example, Patent Documents 1 to 4).Patent Document 1: JP 5 374 883 B2Patent Document 2: WO 2017 / 047 285 A1Patent Document 3: US 2014 / 0 374 793 A1Patent Document 4: DE 11 2019 000 094 T5PROBLEMS TO BE SOLVEDIt is preferable that a wide range of a doping concentration in the depth direction of the semiconductor substrate can be easily adjusted.GENERAL DISCLOSURETo achieve the above object, a first aspect of the present invention relates to a semiconductor device according to claim 1.The intermediate hydrogen concentration between the first hydrogen concentration peak and the second hydrogen concentration peak may be higher than a hydrogen concentration of the upper surface side between the first hydrogen concentration peak and the upper surface of the semiconductor substrate or a hydrogen concentration of the lower surface side between the second hydrogen concentration peak and the lower surface of the semiconductor substrate.The intermediate donor concentration may be 1×10 13 / cm 3 or more and 1×10 15 / cm 3 or less.The intermediate donor concentration may be 1.5 times or more than the upper surface side donor concentration or the lower surface side donor concentration, respectively.The hydrogen chemical concentration distribution may include a first upper surface side skirt in which a hydrogen concentration decreases from the first hydrogen concentration peak toward the upper surface side. The chemical hydrogen concentration distribution may include a first lower surface side skirt in which a hydrogen concentration gradually decreases from the first hydrogen concentration peak toward the lower surface side than the first upper surface side skirt. The hydrogen chemical concentration distribution may include a second lower surface side skirt in which a hydrogen concentration decreases from the second hydrogen concentration peak toward the lower surface side. The chemical hydrogen concentration distribution may include a second lower surface side skirt in which a hydrogen concentration gradually decreases from the second hydrogen concentration peak toward the lower surface side than the second lower surface side skirt.The first peak of hydrogen concentration may be higher than the second peak of hydrogen concentration. The donor concentration of the lower surface side may be higher than the donor concentration of the upper surface side.The second peak of hydrogen concentration may be higher than the first peak of hydrogen concentration. The donor concentration of the upper surface side may be higher than the donor concentration of the lower surface side.The semiconductor substrate may include a drift region of the first conductivity type. The semiconductor substrate may include a gate trench portion disposed on the upper surface of the semiconductor substrate. The semiconductor substrate may include a buffer region of a first conductivity type that is disposed between the drift region and the lower surface of the semiconductor substrate and that has a higher concentration than the drift region. The first peak of hydrogen concentration and the second peak of hydrogen concentration may be disposed between the lower end of the trench portion and the upper end of the buffer region in the depth direction. The intermediate donor concentration between the first hydrogen concentration peak and the second hydrogen concentration peak may be lower than a donor concentration of the upper surface side between the first hydrogen concentration peak and the upper surface of the semiconductor substrate or a donor concentration of the lower surface side between the second hydrogen concentration peak and the lower surface of the semiconductor substrate.Each of the first peak of hydrogen concentration and the second peak of hydrogen concentration may be disposed between the center of the semiconductor substrate and the upper surface in the depth direction.The concentration of intermediate hydrogen may be 10 times or more as the concentration of intermediate donor.Both the lower surface side donor concentration and the upper surface side donor concentration may be higher than the volume doping concentration of the semiconductor substrate.A distribution of the donor concentration of the semiconductor substrate in the depth direction may have a flat portion between both the first hydrogen concentration peak and the upper surface of the semiconductor substrate and the second hydrogen concentration peak and the lower surface of the semiconductor substrate.The donor concentration distribution of the semiconductor substrate may have a flat portion between the first hydrogen concentration peak and the second hydrogen concentration peak in the depth direction.The distance between the first hydrogen concentration peak and the second hydrogen concentration peak in the depth direction may be 1 / 2 times or less than a thickness of the semiconductor substrate in the depth direction.A second aspect of the present invention relates to a method of manufacturing a semiconductor device according to claim 13.The second depth position may be between the first depth position and the other surface. The semiconductor substrate may include a drift region of the first conductivity type. The semiconductor substrate may include a trench portion disposed in the upper surface of the semiconductor substrate. The semiconductor substrate may include a buffer region of a first conductivity type that is disposed between the drift region and the lower surface of the semiconductor substrate and that has a higher concentration than the drift region. The first depth position and the second depth position may be disposed between a lower end of the trench portion and an upper end of the buffer region in the depth direction.The manufacturing method may include performing laser annealing of the upper surface and / or the lower surface of the semiconductor substrate. The hydrogen implantation may be performed after the laser annealing.The above summary of the invention does not include all necessary features of the invention. A sub-combination of these feature groups may also be inventions.BRIEF DESCRIPTION OF THE DRAWINGSFIG. 1 is a sectional view illustrating an example of the semiconductor device 100. FIG. 2 illustrates the distribution of chemical hydrogen concentration and a distribution of donor concentration in the depth direction at a position indicated by the line A-A in FIG. 1. FIG. 3 is a diagram for explaining a flat region 150 in a concentration distribution. FIG. 4 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. FIG. 5 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. FIG. 6 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. FIG. 7 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. FIG. 8 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. FIG. 9 is a plan view illustrating an example of the semiconductor device 100. FIG. 10 is an enlarged view of a region C in FIG. 9. FIG. 11 is a diagram illustrating an example of a cross section b-b in FIG. 10. FIG. 12 is a diagram illustrating another example of a passage region 106- 1 and a passage region 106- 2. FIG. 13 is a diagram illustrating an example of a distribution of the doping concentration along the line D-D in FIG. 12. FIG. 14 is a diagram illustrating an example of a distribution of the chemical hydrogen concentration and a distribution of the donor concentration in a region near a depth position Z 1 and a depth position Z 2 illustrated in FIG. 13. FIG. 15 is a diagram illustrating an example of a manufacturing method of the semiconductor device 100 described in FIGS. 1 to 14.DESCRIPTION OF THE EMBODIMENTSHereinafter, the present invention will be described with reference to embodiments of the invention, and the following embodiments do not limit the invention disclosed in the claims. Moreover, not all combinations of features described in the exemplary embodiments are essential for the solution according to the invention.In the present specification, one side in the direction parallel to the depth direction of a semiconductor substrate is referred to as "upper" and the other side is referred to as "lower". One of two major surfaces of a substrate, a layer or other element is referred to as an upper surface and the other surface as a lower surface. The "upper" and "lower" directions are not limited to the direction of gravity or the direction at the time of mounting the semiconductor device.In the present specification, technical facts can be described using orthogonal coordinate axes X, Y, and Z. The orthogonal coordinate axes merely denote relative positions of components, and do not limit to a particular direction. For example, the Z axis is not limited to only the height direction relative to the ground. A +Z direction and a -Z direction are opposite directions to each other. When describing the Z-axis direction unsigned, a direction parallel to the +Z axis and the -Z axis is referred to.In the present specification, the orthogonal axes parallel to the upper surface and the lower surface of the semiconductor substrate are referred to as the X axis and the Y axis. In addition, the axis perpendicular to the upper surface and the lower surface of the semiconductor substrate is referred to as the Z axis. In the present specification, the direction of the Z axis may be referred to as the depth direction. In addition, in the present specification, a direction parallel to the upper surface and the lower surface of the semiconductor substrate including the X axis and the Y axis may be referred to as a horizontal direction.In the present specification, the term "same" or "same" may include a case where an error due to a deviation in manufacturing or the like is included. The corresponding error is, for example, within 10%.In the present specification, the conductivity type of an impurity doped impurity doped impurity region is referred to as a P-type or an N-type. In the present specification, the impurities may particularly refer to any of an N-type donor and a P-type acceptor, and may be described as dopants. In the present specification, doping refers to introducing a donor or an acceptor into the semiconductor substrate to form an N-type conductivity semiconductor or a P-type conductivity semiconductor.In the present specification, a doping concentration refers to the concentration of a donor or the concentration of an acceptor in a thermally equilibrium state. In the present specification, a net doping concentration refers to a net concentration obtained by adding the donor concentration as a positive ion concentration to the acceptor concentration as a negative ion concentration including polarities of the charges. For example, if the donor concentration N is D and the acceptor concentration N is A, the net doping concentration at any position N becomes D- N A. In the present specification, the net doping concentration may be referred to simply as a doping concentration.The donor has a function of providing electrons to the semiconductor. The acceptor has the function of accepting electrons from the semiconductor. The donor and the acceptor are not limited to the impurity itself. For example, a VOH defect formed by a combination of a void (V), an oxygen (O), and a hydrogen (H) present in the semiconductor may function as a donor that provides electrons. In the present specification, the VOH defect may be referred to as a hydrogen donor.In the present specification, the terms P +- like or N +- like mean that the doping concentration is higher than that of P-like or N-like, and the terms P -- like or N -- like mean that the doping concentration is lower than that of the terms P-like or N-like. In addition, in the present specification, the terms P ++- like or N ++- like mean that the doping concentration is larger than that of P +- like or N +- like.A chemical concentration in the present specification refers to an atomic concentration of impurities measured regardless of the state of electrical activation. The chemical concentration may be measured, for example, by secondary ion mass spectrometry (SIMS). The above net doping concentration can be measured by a capacitance-voltage (CV) method. In addition, a carrier concentration measured by a spreading resistance (SR) method may be used as the doping concentration. The carrier concentration measured by the CV method may be a value in the thermal equilibrium state. In addition, since the donor concentration is sufficiently larger than the acceptor concentration in the N-type region, the carrier concentration in the corresponding region can be used as the donor concentration. Similarly, the carrier concentration in the corresponding region in the P-type region can be used as the acceptor concentration. In the present specification, the doping concentration of the N-type region may be referred to as a donor concentration, and the doping concentration of the P-type region may be referred to as an acceptor concentration.In addition, in a case where the distribution of the concentration of the donor, the acceptor, or the net doping has a peak, the corresponding peak may be used as the concentration of the donor, the acceptor, or the net doping in the corresponding region. In a case where the concentration of the donor, the acceptor, or the net doping is substantially uniform or the like, an average value of the concentration of the donor, the acceptor, or the net doping in the corresponding region may be used as the concentration of the donor, the acceptor, or the net doping.The carrier concentration measured by the SR method may be smaller than the concentration of the donor or the acceptor. In a region where the current flows in measuring a propagation resistance, there is a case where the carrier mobility of the semiconductor substrate is lower than the value of the crystal state. The decrease in carrier mobility occurs due to disorder in crystal structure caused by lattice defect or the like to scatter the carriers.The concentration of the donor or the acceptor calculated from the carrier concentration measured by the CV method or the SR method may be lower than the chemical concentration of the element constituting the donor or the acceptor. For example, the donor concentration of phosphorus or arsenic as the donor or the acceptor concentration of boron as the acceptor in a silicon semiconductor is about 99% of its chemical concentration. On the other hand, the donor concentration of hydrogen as a donor in the silicon semiconductor is about 0.1% to 10% of the chemical concentration of hydrogen.FIG. 1 is a sectional view illustrating an example of the semiconductor device 100. The semiconductor device 100 includes a semiconductor substrate 10. For example, the semiconductor substrate 10 is a silicon substrate.At least one transistor device such as an insulated gate bipolar transistor (IGBT) and / or a diode device such as a free wheeling diode (FWD) is formed in the semiconductor substrate 10. In FIG. 1, the respective electrodes of the transistor device and the diode device and the respective regions in the semiconductor substrate 10 have been omitted. Configuration examples of the transistor device and the diode device will be described later.In the semiconductor substrate 10 of this example, N-type volume donors are continuously distributed. The volume donor is a dopant donor substantially uniformly contained in an ingot during production of the ingot constituting the semiconductor substrate 10. The volume donor in this example is an element other than hydrogen. The dopant of the volume donor is, for example, phosphorus, antimony, arsenic, selenium or sulfur, but the invention is not limited thereto. The volume donor in this example is phosphorus. The main donor is also included in the P-type region. The semiconductor substrate 10 may be a wafer cut out from a semiconductor ingot or a chip obtained by slicing a wafer into individual parts. The semiconductor ingot may be manufactured by either a Chokralsky (CZ) method, an applied magnetic field Chokralsky (MCZ) method, or a float zone (FZ) method. The ingot of this example is produced by the MCZ method. As the volume doping concentration, the chemical concentration of the volume donor through the semiconductor substrate 10 may be used, or a value between 90% and 100% of the chemical concentration may be used.The semiconductor substrate 10 has an upper surface 21 and a lower surface 23. the upper surface 21 and the lower surface 23 are two main surfaces of the semiconductor substrate 10.Hydrogen ions are implanted into the semiconductor substrate 10 from the lower surface 23 to the depth position Z 1. Hydrogen ions are implanted into the semiconductor substrate 10 from the upper surface 21 to the depth position Z 2. Implanting hydrogen ions at a predetermined depth position means that hydrogen ions are accelerated with acceleration energy corresponding to the depth position. The hydrogen ions are dispersed not only at the depth position but also in the vicinity of the depth position. In addition, the hydrogen ions may also be distributed in the passage region 106 between the implantation surface and the depth position.The distribution of the hydrogen chemical concentration of the semiconductor substrate 10 in the depth direction includes a first peak 101 of the hydrogen concentration at the depth position Z 1 and a second peak 102 of the hydrogen concentration at the depth position Z 2. In Fig. 1, the peak of hydrogen concentration is schematically marked by a cross. In FIG. 1, the depth position Z 1 is between the upper surface 21 and the depth position Z 2, but the depth position Z 1 may be between the lower surface 23 and the depth position Z 2.In the present specification, a region through which the implanted hydrogen ions have passed may be referred to as a through region. In the passage region 106- 1 between the lower surface 23 and the depth position Z 1 and in the passage region 106- 2 between the upper surface 21 and the depth position Z 2, lattice defects mainly consisting of vacancies such as monoatomic vacancies (V) and divakances (VV) are formed by the passage of hydrogen. Atoms adjacent the vacancies have Baumel bonds. The lattice defects also include interstitials, dislocations, or the like, and in a broader sense, donors and acceptors may also be included. However, in the present specification, the lattice defect mainly consisting of vacancies may be referred to as a vacancy lattice defect, a vacancy defect, or simply a lattice defect. In addition, since a large number of lattice defects are formed due to implanting hydrogen ions into the semiconductor substrate 10, the crystallinity of the semiconductor substrate 10 may be greatly disturbed. In the present specification, the disturbance of crystallinity may be referred to as disorder.In addition, oxygen is contained in the entire semiconductor substrate 10. The oxygen is introduced intentionally or unintentionally at the time of producing a semiconductor ingot. In the semiconductor substrate 10, hydrogen (H), a hole (V), and oxygen (O) combine to form a VOH defect. In addition, the heat treatment of the semiconductor substrate 10 diffuses hydrogen to promote the formation of VOH defects. The VOH defect serves as a donor that provides electrons. In the present specification, the VOH defect may be referred to simply as a hydrogen donor. In the semiconductor substrate 10 of this example, hydrogen donors are formed in the hydrogen ion passage region 106. The doping concentration of the hydrogen donor is lower than the chemical concentration of hydrogen. If the ratio of the doping concentration of the hydrogen donor to the chemical concentration of hydrogen is an activation rate, the activation rate may have a value of 0.1% to 30%. In this example, the activation rate is 1% to 5%.By forming a hydrogen donor in the through region 106 of the semiconductor substrate 10, the donor concentration in the through region 106 of the semiconductor substrate 10 can be set higher than the volume doping concentration. It is usually necessary to prepare the semiconductor substrate 10 with a predetermined volume doping concentration according to properties of a component to be formed in the semiconductor substrate 10, in particular according to a rated voltage or withstand voltage. On the other hand, the donor concentration of a predetermined region of the semiconductor substrate 10 according to the semiconductor device 100 illustrated in FIG. 1 may be adjusted by controlling the dosage and implantation depth of hydrogen ions. Thus, the semiconductor device 100 can be manufactured using a semiconductor substrate 10 having a volume doping concentration that does not correspond to the characteristics and the like of the device. The deviation of the volume doping concentration at the time of manufacturing the semiconductor substrate 10 is relatively large, but the dosage of the hydrogen ions can be controlled with relatively high accuracy. Therefore, the concentration of the lattice defects generated by implanting hydrogen ions can be controlled with high accuracy, and the donor concentration of the through region 106 can be controlled with high accuracy.In the semiconductor device 100, hydrogen ions are implanted from both the upper surface 21 and the lower surface 23. Therefore, the through portion 106 can be easily formed with a wide range. In the example of FIG. 1, the through region 106 may be formed over the entire depth direction, since the through region 106- 1 and the through region 106- 2 partially overlap. In addition, it is also conceivable to form a through region in the entire semiconductor substrate by implanting hydrogen ions to penetrate from the upper surface 21 or the lower surface 23 into the semiconductor substrate 10. On the other hand, according to the semiconductor device 100, the acceleration energy of the hydrogen ions can be reduced as compared with a case where hydrogen ions enter the semiconductor substrate 10, because hydrogen ions are implanted from both the upper surface 21 and the lower surface 23. Therefore, damage to the device structure such as a gate insulating film and the like can be reduced.FIG. 2 illustrates the distribution of chemical hydrogen concentration and a distribution of donor concentration in the depth direction at a position shown by the line A-A in FIG. 1. In FIG. 2, the horizontal axis represents the depth position from the lower surface 23, and the vertical axis represents the chemical hydrogen concentration and the concentration per unit volume on a logarithmic axis. The donor concentration in FIG. 2 is measured by, for example, the CV method or the SR method. The chemical hydrogen concentration in FIG. 2 is, for example, a hydrogen concentration measured by the SIMS method. In FIG. 2, the distribution of the chemical hydrogen concentration is represented by a broken line, and the distribution of the donor concentration is represented by a solid line. In FIG. 2, the volume doping concentration is denoted by Db. In addition, the central position of the semiconductor substrate 10 in the depth direction is defined as Zc.The hydrogen chemical concentration distribution has the first hydrogen concentration peak 101 and the second hydrogen concentration peak 102. The second hydrogen concentration peak 102 is located closer to the lower surface 23 side of the semiconductor substrate 10 than the first hydrogen concentration peak 101. That is, the second hydrogen concentration peak 102 is located between the first hydrogen concentration peak 101 and the lower surface 23.A position of the first depth-direction hydrogen concentration peak 101 is defined as Z 1, and a position of the second depth-direction hydrogen concentration peak 102 is defined as Z 2. The position of the concentration peak is a position where the concentration has a local maximum.The chemical hydrogen concentration distribution includes an upper surface side first skirt S 1 a, a lower surface side first skirt S 1 b, an upper surface side second skirt S 2 a, and a lower surface side second skirt S 2 b. The first upper surface side skirt S 1 ais a portion where the hydrogen concentration decreases from the first hydrogen concentration peak 101 to the upper surface 21 side in the hydrogen chemical concentration distribution. The lower surface side first skirt S 1 bis a portion where the hydrogen concentration decreases from the first hydrogen concentration peak 101 to the lower surface 23 side in the hydrogen chemical concentration distribution. The upper surface side second skirt S 2 ais a portion where the hydrogen concentration decreases from the second hydrogen concentration peak 102 to the upper surface 21 side in the hydrogen chemical concentration distribution. The lower surface side second skirt S 2 bis a portion where the hydrogen concentration decreases from the second hydrogen concentration peak 102 to the lower surface 23 side in the hydrogen chemical concentration distribution.The first peak 101 of the hydrogen concentration in this example is a concentration peak due to hydrogen implanted from the lower surface 23 side. When hydrogen is implanted from the lower surface 23 side, hydrogen is also distributed in the passage region between the lower surface 23 and the implanting position of hydrogen. Therefore, the hydrogen concentration of the first lower surface side skirt S 1 bgradually decreases than the hydrogen concentration of the first upper surface side skirt S 1 a. That is, the inclination of the first lower surface side skirt S 1 bis smaller than the inclination of the first upper surface side skirt S 1 a.The second peak 102 of the hydrogen concentration in this example is a concentration peak due to hydrogen implanted from the upper surface 21 side. When hydrogen is implanted from the upper surface 21 side, hydrogen is also distributed in the passage region between the upper surface 21 and the implanting position of hydrogen. Therefore, the hydrogen concentration of the upper surface side second skirt S 2 agradually decreases than the hydrogen concentration of the lower surface side second skirt S 2 b. That is, the inclination of the upper surface side second skirt S 2 ais smaller than the inclination of the lower surface side second skirt S 2 b. As the slope of the skirt of the concentration distribution in the present specification, the slope of the skirt within a predetermined distance from the position of the concentration peak may be used. The predetermined distance may be 5 μm, 3 μm or 1 μm. The predetermined distance may be half or 1 / 4 of the distance between the depth position Z 1 and the depth position Z 2. The slope of each skirt may be the slope of the skirt from the position of the concentration peak to the position where the value of the concentration corresponds to half of the peak.The hydrogen concentration distribution between the first hydrogen concentration peak 101 and the second peak 102 is defined as the intermediate hydrogen distribution 103. The chemical hydrogen concentration of the intermediate hydrogen distribution 103 is defined as an intermediate hydrogen concentration Hc. As the intermediate hydrogen concentration Hc, a minimum value of the hydrogen concentration between the depth positions Z 1 and Z 2 may be used, or an average value may be used. As the intermediate hydrogen concentration Hc, an average concentration of flat portions in the intermediate hydrogen concentration 103 may be used. The flat portion of the concentration distribution is a portion where a substantially constant concentration region is continuously present over a predetermined length in the depth direction. Details of the flat portion will be described later.The hydrogen concentration distribution between the first hydrogen concentration peak 101 and the upper surface 21 of the semiconductor substrate 10 is defined as an upper surface side hydrogen concentration 104. The hydrogen concentration in the upper surface side hydrogen distribution 104 is defined as an upper surface side hydrogen concentration Hs 1. As the upper surface side hydrogen concentration Hs 1, a minimum value of the hydrogen concentration between the depth position Z 1 and the upper surface 21 may be used, or an average value may be used. As the upper surface side hydrogen concentration Hs 1, an average concentration of flat portions that are closest to the depth position Z 1 among the flat portions in the upper surface side hydrogen distribution 104 may be used.The hydrogen concentration distribution between the second hydrogen concentration peak 102 and the lower surface 23 of the semiconductor substrate 10 is defined as a lower surface side hydrogen concentration 105. The hydrogen concentration of the lower surface side hydrogen distribution 105 is defined as a lower surface side hydrogen concentration Hs 2. As the lower surface side hydrogen concentration Hs 2, a minimum value of the hydrogen concentration between the depth position Z 2 and the lower surface 23 may be used, or an average value may be used. As the lower surface side hydrogen concentration Hs 2, an average concentration of flat portions that are closest to the depth position Z 2 among the flat portions in the lower surface side hydrogen distribution 105 may be used.The intermediate hydrogen concentration Hc is different from the upper surface side hydrogen concentration Hs 1 and the lower surface side hydrogen concentration Hs 2. In this example, hydrogen implanted from the upper surface 21 side as well as hydrogen implanted from the lower surface 23 side exists in a region between the depth positions Z 1 and Z 2. Therefore, the intermediate donor concentration Hc in this example is higher than the upper surface side donor concentration Hs 1 and the lower surface side donor concentration Hs 2. The intermediate hydrogen concentration Hc may be 1.5 times or more, 2 times or more, or 5 times or more of any of the upper surface side hydrogen concentration Hs 1 and the lower surface side hydrogen concentration Hs 2.The donor concentration distribution has a first donor concentration peak 111 and a second donor concentration peak 112. The second donor concentration peak 112 is located closer to the lower surface 23 side of the semiconductor substrate 10 than the first donor concentration peak 111. The first donor concentration peak 111 is located at the same depth position Z 1 as the first hydrogen concentration peak 101. The second donor concentration peak 112 is located at the same depth position Z 2 as the second hydrogen concentration peak 102. When the range of half the width of one peak includes the peak of other peaks, it can be said that two peaks are present at the same depth position.The donor concentration distribution includes a third upper surface side skirt S 3 a, a third lower surface side skirt S 3 b, a fourth upper surface side skirt S 4 a, and a fourth lower surface side skirt S 4 b. The third upper surface side skirt S 3 ais a portion where the donor concentration decreases from the first donor concentration peak 111 toward the upper surface 21 side in the donor concentration distribution. The third lower surface side skirt S 3 bis a portion where the donor concentration decreases from the first donor concentration peak 111 toward the lower surface 23 side in the donor concentration distribution. The fourth upper surface side skirt S 4 ais a portion where the donor concentration decreases from the second donor concentration peak 112 toward the upper surface 21 side in the donor concentration distribution. The lower surface side fourth skirt S 4 bis a portion where the donor concentration decreases from the donor concentration second peak 112 toward the lower surface 23 side in the donor concentration distribution.Each donor concentration peak has a similar shape to the corresponding hydrogen concentration peak. In this example, the donor concentration of the lower surface side third skirt S 3 bgradually decreases than the donor concentration of the upper surface side third skirt S 3 a. That is, the inclination of the lower surface side third skirt S 3 bis smaller than the inclination of the upper surface side third skirt S 3 a. In addition, the donor concentration of the upper surface side fourth skirt S 4 agradually decreases than the donor concentration of the lower surface side fourth skirt S 4 b. That is, the inclination of the upper surface side fourth skirt S 4 ais smaller than the inclination of the lower surface side fourth skirt S 4 b.The distribution of donor concentration between the first donor concentration peak 111 and the second donor concentration peak 112 is defined as intermediate donor distribution 113. The donor concentration of the intermediate donor distribution 113 is defined as an intermediate donor concentration Dc. As the intermediate donor concentration Dc, a minimum value of the donor concentration between the depth positions Z 1 and Z 2 may be used, or an average value may be used. As the intermediate donor concentration Dc, an average concentration of flat portions in the intermediate donor concentration 113 may be used.The distribution of the donor concentration between the first donor concentration peak 111 and the upper surface 21 of the semiconductor substrate 10 is defined as an upper surface side donor concentration 114. In addition, the donor concentration in the upper surface side donor distribution 114 is defined as an upper surface side donor concentration Ds 1. As the donor concentration Ds 1 of the upper surface side, a minimum value of the donor concentration between the depth position Z 1 and the upper surface 21 may be used, or an average value may be used. As the upper surface side donor concentration Ds 1, an average concentration of flat portions that are closest to the depth position Z 1 among the flat portions in the upper surface side donor distribution 114 may be used.The distribution of the donor concentration between the second donor concentration peak 112 and the lower surface 23 of the semiconductor substrate 10 is defined as a lower surface side donor concentration 115. The donor concentration of the lower surface side donor distribution 115 is defined as a lower surface side donor concentration Ds 2. As the donor concentration Ds 2 of the lower surface side, a minimum value of the donor concentration between the depth position Z 2 and the lower surface 23 may be used, or an average value may be used. As the lower surface side donor concentration Ds 2, the average concentration of the flat portions that are closest to the depth position Z 2 among the flat portions in the lower surface side donor distribution 115 may be used.The intermediate donor concentration Dc is different from the upper surface side donor concentration Ds 1 and the lower surface side donor concentration Ds 2. In this example, the intermediate donor concentration Dc is higher than the upper surface side donor concentration Ds 1 or the lower surface side donor concentration Ds 2. The intermediate donor concentration Dc may be 1.5 times or more, 2 times or more, or 5 times or more of any upper surface side donor concentration Ds 1 or lower surface side donor concentration Ds 2.In this example, all of the intermediate donor concentration Dc, the upper surface side donor concentration Ds 1, and the lower surface side donor concentration Ds 2 are higher than the volume doping concentration Db. The intermediate donor concentration Dc may be 1×10 13 / cm 3 or more and 1×10 15 / cm 3 or less. The intermediate donor concentration Dc may be 5×10 13 / cm 3 or more, or 1×10 14 / cm 3 or more. The intermediate hydrogen concentration Hc may be 10 times or more, 50 times or more, or 100 times or more the intermediate donor concentration Dc.As illustrated in FIG. 1, the donor concentration can be adjusted in the depth direction over the entire semiconductor substrate 10 by implanting hydrogen ions such that the through region 106- 1 and the through region 106- 2 overlap. In addition, since hydrogen ions are implanted from both the upper surface 21 and the lower surface 23, damage to the insulating film and the like can be reduced. In addition, since the depth positions Z 1 and Z 2 are different from each other, it is possible to prevent the peak values of the hydrogen chemical concentration and the donor concentration from becoming too large.A hydrogen chemical concentration Hp 1 at the first hydrogen concentration peak 101 and a hydrogen chemical concentration Hp 2 at the second hydrogen concentration peak 102 may be the same or different. A donor concentration Dp 1 at the first donor concentration peak 111 and a donor concentration Dp 2 at the second donor concentration peak 112 may be the same or different.In the example of FIG. 2, the depth position Z 1 is disposed on the upper surface 21 side of the semiconductor substrate 10. Further, the second depth position Z 2 may be disposed on the lower surface 23 side of the semiconductor substrate 10. The upper surface side 21 denotes a region between the center Zc of the semiconductor substrate 10 in the depth direction and the upper surface 21, and the lower surface side 23 denotes a region between the center Zc of the semiconductor substrate 10 in the depth direction and the lower surface 23, and the central position of the region on the lower surface 23 side of the semiconductor substrate 10 in the depth direction is defined as Zc 2. Similarly, the central position of the region on the side of the upper surface 21 in the depth direction is defined as Zc 1. The depth position Z 1 in this example is between the depth positions Zc and Zc 1. The depth position Z 2 is between the depth positions Zc and Zc 2. However, the arrangement of the depth positions Z 1 and Z 2 is not limited to the example of FIG. 2.FIG. 3 is a diagram for explaining the flat region 150 of the concentration distribution. In FIG. 3, the donor concentration distribution flat region 150 is described, but the same definition may be used for the hydrogen chemical concentration distribution flat region. In FIG. 3, a part of the first donor concentration peak 111 and the upper surface side donor distribution 114 are enlarged.It is assumed that in the passage region 106 (see FIG. 1 ) through which the hydrogen ions have passed, the vacancies (V, VV, etc.) generated by the passage of hydrogen are distributed in a substantially uniform concentration in the depth direction, except for the vicinity of the depth positions Z 1 and Z 2. In addition, it is assumed that at the time of manufacturing the semiconductor substrate 10, implanted oxygen (O) or the like also has a uniform distribution in the depth direction. In addition, since hydrogen diffuses at each peak of the hydrogen concentration, a sufficient amount of hydrogen is present in the passage region 106. Thus, VOH defects formed by the vacancies, oxygen and hydrogen are substantially uniformly present in the passage region 106.Therefore, in the through region 106 except for the vicinity of the depth positions Z 1 and Z 2, there is a flat region 150 in which VOH defects serving as donors are substantially uniformly distributed. The donor concentration in the flat region 150 is substantially constant in the depth direction. The state in which the donor concentration is substantially constant in the depth direction may refer to a state in which a region where the difference between a maximum value Dmax and a minimum value Dmin of the donor concentration is within 50% of the maximum value Dmax of the donor concentration is continuous over a predetermined length or more in the depth direction. The difference may be 30% or less, or 10% or less of the maximum value Dmax of the donor concentration of the region.Alternatively, with respect to the average concentration of the donor concentration distribution in a predetermined range in the depth direction, a value of the donor concentration distribution may be within ±50%, within ±30%, or within ±10% of the average concentration of the donor concentration distribution. The predetermined length in the depth direction may be 5 μm, 10 μm, or 15 μm. In the example of FIG. 3, when a portion defined by the two depth positions Zs and Ze is 5 μm or more and the difference between the maximum value Dmax and the minimum value Dmin of the donor concentration of the portion is within 50% of the maximum value Dmax of the donor concentration, the portion is set as the flat portion 150.In FIG. 3, the flat portion 150 of the upper surface side donor distribution 114 has been described. The flat portion 150 may be in the lower surface side donor distribution 115 and may be in both the upper surface side donor distribution 114 and the lower surface side donor distribution 115. The flat portion 150 may be disposed in the intermediate donor manifold 113.FIG. 4 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. In this example, the depth position Z 1 is between the depth position Zc 1 and the upper surface 21, and the depth position Z 2 is between the depth position Zc 2 and the lower surface 23. that is, the first hydrogen concentration peak 101 and the first donor concentration peak 111 are disposed between the depth position Zc 1 and the upper surface 21, and the second hydrogen concentration peak 102 and the second donor concentration peak 112 are disposed between the depth position Zc 2 and the lower surface 23. Other configurations are identical to those of the example of FIG. 2.According to this example, the regions of the intermediate hydrogen distribution 103 and the intermediate donor distribution 113 can be formed wide. That is, a region having a relatively high donor concentration can be formed wide in the depth direction. Moreover, the first donor concentration peak 111 may easily serve as at least a part of the N-type region formed on the upper surface 21 side of the semiconductor substrate 10, and the second donor concentration peak 112 may easily serve as at least a part of the N-type region formed on the lower surface 23 side of the semiconductor substrate 10. The N-type region on the upper surface 21 side is, for example, an accumulation region described later. The N-type region on the lower surface 23 side is, for example, a buffer region described later. As a result, it is possible to prevent an unnecessary donor concentration peak from being formed while forming a donor having a concentration higher than the volume doping concentration Db over the entire semiconductor substrate 10 in the depth direction.FIG. 5 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. In this example, both the depth position Z 1 and the depth position Z 2 are disposed on the upper surface 21 side of the semiconductor substrate 10. Other configurations are identical to those of the example of FIG. 2.According to this example, it is easy to use the first donor concentration peak 111 and the second donor concentration peak 112 as at least a part of the N-type region formed on the upper surface 21 of the semiconductor substrate 10. The N-type region on the upper surface 21 side is, for example, an accumulation region described later.FIG. 6 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. In this example, both the depth position Z 1 and the depth position Z 2 are disposed on the lower surface 23 side of the semiconductor substrate 10. Other configurations are identical to those of the example of FIG. 2.According to this example, it is easy to use the first donor concentration peak 111 and the second donor concentration peak 112 as at least a part of the N-type region formed on the lower surface 23 of the semiconductor substrate 10. The N-type region on the lower surface 23 side is, for example, a buffer region described later.FIG. 7 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. In this example, the concentration of each peak and each distribution are different. The depth position of each peak is the same as any one of the aspects described in FIGS. 2 to 6.The hydrogen chemical concentration Hp 1 of the first hydrogen concentration peak 101 is higher than the hydrogen chemical concentration Hp 2 of the second hydrogen concentration peak 102 in this example. Similarly, the donor concentration Dp 1 of the first donor concentration peak 111 is higher than the donor concentration Dp 2 of the second donor concentration peak 112.In this example, the dosage of hydrogen ions from the lower surface 23 is higher than the dosage of hydrogen ions from the upper surface 21, and therefore, the hydrogen chemical concentration of the lower surface side hydrogen distribution 105 is higher than the hydrogen chemical concentration of the upper surface side hydrogen distribution 104. For example, in the lower surface side hydrogen distribution 105, the hydrogen chemical concentration at the position away by a distance Zx from the first hydrogen concentration peak 101 is higher than the hydrogen chemical concentration at the position away by the distance Zx from the second hydrogen concentration peak 102 in the upper surface side hydrogen distribution 104. The distance Zx is any distance within the range of each distribution.In addition, in the donor concentration distribution, the donor concentration of the lower surface side donor distribution 115 is higher than the donor concentration of the upper surface side donor distribution 114. For example, the donor concentration at a position away by the distance Zx from the first donor concentration peak 111 in the lower surface side donor distribution 115 is higher than the donor concentration at a position away by the distance Zx from the second donor concentration peak 112 in the upper surface side donor distribution 114.FIG. 8 illustrates another example of the distribution of the hydrogen chemical concentration and the distribution of the donor concentration in the depth direction at the position indicated by the line A-A in FIG. 1. In this example, the concentration of each peak and each distribution are different. The depth position of each peak is the same as any one of the aspects described in FIGS. 2 to 6.The hydrogen chemical concentration Hp 2 of the second hydrogen concentration peak 102 is higher than the hydrogen chemical concentration Hp 1 of the first hydrogen concentration peak 101 in this example. Similarly, the donor concentration Dp 2 of the second donor concentration peak 112 is higher than the donor concentration Dp 1 of the first donor concentration peak 111.In this example, the dosage of hydrogen ions from the upper surface 21 is higher than the dosage of hydrogen ions from the lower surface 23. For example, in the upper surface side hydrogen distribution 104, the hydrogen chemical concentration at the position away by the distance Zx from the second hydrogen concentration peak 102 is higher than the hydrogen chemical concentration at the position away by the distance Zx from the first hydrogen concentration peak 101 in the lower surface side hydrogen distribution 105.In addition, in the donor concentration distribution, the donor concentration of the upper surface side donor distribution 114 is higher than the donor concentration of the lower surface side donor distribution 115. For example, the donor concentration at the position away by the distance Zx from the second donor concentration peak 112 in the upper surface side donor distribution 114 is higher than the donor concentration at the position away by the distance Zx from the first donor concentration peak 111 in the lower surface side donor distribution 115. As described in FIGS. 2 to 8, the distribution of the donor concentration in the semiconductor substrate 10 can be adjusted appropriately by adjusting the position of each peak of the hydrogen concentration and the concentration.FIG. 9 is a plan view illustrating an example of the semiconductor device 100. FIG. 9 illustrates a position where each element is projected on the upper surface of the semiconductor substrate 10. In FIG. 9, only some elements of the semiconductor device 100 are illustrated, and other elements have been omitted.The semiconductor device 100 includes the semiconductor substrate 10. the semiconductor substrate 10 may have the chemical hydrogen concentration distribution and the donor concentration distribution of any one aspect described in FIGS. 1 to 8. However, the semiconductor substrate 10 may further have another concentration peak different from each concentration peak described in FIGS. 1 to 8. As in a buffer region 20 described later, hydrogen ions may be implanted to form an N-type region in the semiconductor substrate 10. In this case, the hydrogen chemical concentration distribution may have a hydrogen concentration peak in addition to the hydrogen concentration peak described in FIGS. 1 to 8. In addition, as in the emitter region 12 described later, an N-type impurity other than hydrogen such as phosphorus may be implanted to form an N-type region in the semiconductor substrate 10. In this case, the donor concentration distribution may have a donor concentration peak in addition to the donor concentration peak described in FIGS. 1 to 8.The semiconductor substrate 10 has an edge 162 in plan view. In the present specification, when only "in plan view" is given, a view from the upper surface side of the semiconductor substrate 10 is meant. The semiconductor substrate 10 of this example includes two sets of edges 162 that oppose each other in plan view. In FIG. 9, the X axis and the Y axis are parallel to any of the edges 162. Further, the Z axis is perpendicular to the upper surface of the semiconductor substrate 10.The semiconductor substrate 10 includes an active portion 160. The active portion 160 is a region in which a main current flows in the depth direction between the upper surface and the lower surface of the semiconductor substrate 10 when the semiconductor device 100 is operated. An emitter electrode is disposed over the active portion 160, but has been omitted in FIG. 9.In the active portion 160, at least the transistor portion 70 including a transistor device such as an IGBT and / or the diode device 80 including a diode element such as a free wheeling diode (FWD) is disposed. In the example of FIG. 9, the transistor portion 70 and the diode portion 80 are alternately arranged along a predetermined arrangement direction (the X-axis direction in the present example) on the upper surface of the semiconductor substrate 10. In another example, only one of the transistor portion 70 and the diode portion 80 may be disposed in the active portion 160.In FIG. 9, the symbol "I" is appended to the region where the transistor portion 70 is disposed, and the symbol "F" is appended to the region where the diode portion 80 is disposed. In the present specification, a direction perpendicular to the arrangement direction in plan view may be referred to as an extension direction (Y-axis direction in FIG. 9 ). The transistor portion 70 and the diode portion 80 may each have a long side in the extension direction. In other words, the length of the transistor portion 70 in the Y-axis direction is greater than the width in the X-axis direction. Similarly, the length of the diode portion 80 in the Y-axis direction may be greater than the width in the X-axis direction. The extending direction of the transistor portion 70 and the diode portion 80 and the longitudinal direction of each trench portion described later may be the same.The diode portion 80 includes an N +- type cathode region in a region connected to the lower surface of the semiconductor substrate 10. In the present specification, the region where the cathode region is disposed is referred to as the diode portion 80. In other words, the diode portion 80 is a region that overlaps with the cathode region in plan view. On the lower surface of the semiconductor substrate 10, a P +- type collector region 22 may be disposed in a region other than the cathode region. In the present specification, in the diode portion 80, the extension region 81 extending in the Y-axis direction from the diode portion 80 to a gate runner described later may also be included. In the lower surface of the extension portion 81, a collector portion is disposed.The transistor portion 70 includes a P +- type collector region in a region connected to the lower surface of the semiconductor substrate 10. Moreover, in the transistor portion 70, a gate structure including an N-type emitter region, a P-type base region, a gate line portion, and a gate insulating film is periodically disposed on the upper surface side of the semiconductor substrate 10.The semiconductor device 100 may include one or more pads on the upper side of the semiconductor substrate 10. The semiconductor device 100 of this example includes a gate pad 164. The semiconductor device 100 may include pads such as an anode pad, a cathode pad, and a current detection pad. Each pad is disposed near the edge 162. The vicinity of the edge 162 denotes a region between the edge 162 and the emitter electrode in plan view. In mounting the semiconductor device 100, each pad may be connected to an external circuit via a wiring such as a wire.A gate potential is applied to the gate pad 164. The gate pad 164 is electrically connected to the conductive portion of a gate trench portion of the active portion 160. The semiconductor device 100 includes a gate runner that connects the gate pad 164 and the gate trench portion. In FIG. 9, the gate runner is shaded with oblique lines.The gate rotor of this example includes an outer peripheral gate rotor 130 and an active-side gate wiring 131. The outer peripheral gate runner 130 is disposed between the active portion 160 and the edge 162 of the semiconductor substrate 10 in plan view. The outer peripheral gate rotor 130 of this example surrounds the active portion 160 in plan view. The area surrounding the outer circumferential gate rotor 130 in plan view may be referred to as the active portion 160. Further, the outer gate rotor 130 is connected to the gate pad 164. The outer peripheral gate runner 130 is disposed on the upper side of the semiconductor substrate 10. The outer peripheral gate rotor 130 may be a metal wiring including aluminum or the like.The active-side gate wiring 131 is disposed in the active portion 160. By providing the active-side gate wiring 131 in the active portion 160, it is possible to reduce a deviation of the wiring length from the gate pad 164 in each region of the semiconductor substrate 10.The active-side gate wiring 131 is connected to the gate trench portion of the active portion 160. The active-side gate wiring 131 is disposed on the upper side of the semiconductor substrate 10. The active-side gate wiring 131 may be wiring formed of a semiconductor material such as polysilicon doped with impurities.The active-side gate wiring 131 may be connected to the outer peripheral gate runner 130. The active-side gate wiring 131 of this example extends in the X-axis direction from one outer peripheral gate runner 130 almost in the center of the Y-axis direction to the other outer peripheral gate runner 130 to cross the active portion 160. In a case where the active portion 160 is divided by the active-side gate wiring 131, the transistor portion 70 and the diode portion 80 may be alternately arranged in the X-axis direction in each divided region.In addition, the semiconductor device 100 may include a temperature sensing portion (not illustrated) that is a PN junction diode formed of polysilicon or the like and a current sensing portion (not illustrated) that simulates the operation of the transistor portion disposed in the active portion 160.The semiconductor device 100 of this example includes an edge termination structure portion 90 between the active portion 160 and the edge side 102 in plan view. The edge termination structure portion 90 of this example is disposed between the outer peripheral gate runner 130 and the edge 162. The edge termination structure portion 90 reduces an electric field strength on the upper surface side of the semiconductor substrate 10.FIG. 10 is an enlarged view of the region C in FIG. 9, region C is a region where the transistor portion 70, the diode portion 80, and the active-side gate wiring 131 are included. The semiconductor device 100 of this example includes a gate trench portion 40, a dummy trench portion 30, a drain region 11, an emitter region 12, a base region 14, and a contact region 15 disposed inside the upper surface side of the semiconductor substrate 10. The gate trench portion 40 and the dummy trench portion 30 are examples of the trench portion, respectively. In addition, the semiconductor device 100 of this example includes an emitter electrode 52 and the active-side gate wiring 131 disposed on the upper side of the upper surface of the semiconductor substrate 10. The emitter electrode 52 and the active-side gate wiring 131 are spaced apart from each other.An interlayer dielectric film is disposed between the upper surface of the semiconductor substrate 10 and the emitter electrode 52 and the active-side gate wiring 131, but has been omitted in FIG. 10. In the interlayer dielectric film of this example, a contact hole 54 passing through the interlayer insulating film is disposed. In Fig. 10, each contact hole 54 is shaded with oblique lines.The emitter electrode 52 is disposed on the upper side of the gate trench portion 40, the dummy trench portion 30, the drain region 11, the emitter region 12, the base region 14, and the contact region 15. The emitter electrode 52 is connected to the emitter region 12, the contact region 15, and the base region 14 in the upper surface of the semiconductor substrate 10 through the contact hole 54. In addition, the emitter electrode 52 is connected to a dummy line portion in the dummy trench portion 30 through the contact hole disposed in the interlayer dielectric film. The emitter electrode 52 may be connected to the dummy line portion of the dummy trench portion 30 at the edge of the dummy trench portion 30 in the Y-axis direction.The active-side gate wiring 131 is connected to the dummy trench portion 40 through the contact hole disposed in the interlayer dielectric film. The active-side gate wiring 131 may be connected to a gate line portion of the gate trench portion 40 in an edge portion of the gate trench portion 40 in the Y-axis direction. The active-side gate wiring 131 is not connected to the dummy line portion in the dummy trench portion 30.The emitter electrode 52 is formed of a material containing metal. FIG. 10 illustrates a region where the emitter electrode 52 is disposed. For example, at least a portion of emitter electrode 52 is formed of aluminum or an aluminum-silicon alloy, e.g., a metal alloy such as AlSi or AlSiCu. The emitter electrode 52 may have a metal barrier of titanium or a titanium composite in the lower layer of the region formed of aluminum or the like. Further, a plug having tungsten buried therein may be included in the contact hole, and connected to the metal barrier, aluminum, or the like.The drain region 11 is arranged overlapping with the active-side gate wiring 131. The drain region 11 extends with a predetermined width even in a region where the active-side gate wiring 131 does not overlap. The well region 11 of this example is disposed spaced from the end of the contact hole 54 in the Y-axis direction to the active-side gate wiring 131. The well region is a region of a second conductivity type whose doping concentration is higher than that of the base region 14. The base region 14 in this example is P -- like and the drain region 11 is P +- like.The transistor portion 70 and the diode portion 80 each include a plurality of trench portions arranged in the arrangement direction. In the transistor portion 70 of this example, one or more gate trench portions 40 and one or more dummy trench portions 30 are alternately arranged along the arrangement direction. In the diode portion 80 of this example, the plurality of dummy trench portions 30 are arranged along the arrangement direction. In the diode portion 80 of this example, no gate trench portion 40 is disposed.The gate trench portion 40 of this example may include two straight portions 39 (trench portions straight along the extension direction) extending along the extension direction perpendicular to the arrangement direction, and the edge portion 41 for connecting the two linear portions 39. The extending direction in FIG. 10 is the Y-axis direction.At least a part of the edge portion 41 is preferably disposed in a curved shape in plan view. The ends of two straight portions 39 in the Y-axis direction are connected to the edge portion 41, so that the electric field strength in the end portion of the straight portion 39 can be reduced.In the transistor portion 70, the dummy trench portion 30 is disposed between the straight portions 39 of the gate trench portion 40. Between the straight portions 39, a dummy trench portion 30 or a plurality of dummy trench portions 30 may be disposed. The dummy trench portion 30 may have a straight shape extending in the extension direction, or may include a straight portion 29 and an edge portion 31 similar to the gate trench portion 40. The semiconductor device 100 illustrated in FIG. 10 includes both the dummy straight trench portion 30 having no edge portion 31 and the dummy trench portion 30 having the end portion 31.A diffusion depth of the well region 11 may be deeper than the depths of the gate trench portion 40 and the dummy trench portion 30. the end portions of the gate trench portion 40 and the dummy trench portion 30 in the Y-axis direction include the well region 11 in plan view. In other words, the bottom of each trench portion in the depth direction is considered with the depression region 11 at the end portion of each trench portion in the Y-axis direction. With this configuration, the electric field strength at the bottom of each trench portion can be reduced.A mesa portion is disposed between the trench portions in the arrangement direction. The mesa portion denotes a region sandwiched between the trench portions in the semiconductor substrate 10. For example, the upper end of the mesa portion is the upper surface of the semiconductor substrate 10. The mesa portion of this example is disposed to extend in the extension direction (Y-axis direction) along the trench in the upper surface of the semiconductor substrate 10. In this example, a mesa portion 60 is disposed in the transistor portion 70, and a mesa portion 61 is disposed in the diode portion 80. In the present specification, if simply mentioned a "mesa portion", the portion denotes the mesa portion 60 and the mesa portion 61, respectively.Each mesa portion includes the base region 14. in the base region 14 in the mesa portion exposed to the upper surface of the semiconductor substrate 10, a region closest to the active-side gate wiring 131 is referred to as a base region 14- e. In FIG. 10, the base region 14- edisposed in an extension direction end portion of each mesa portion is illustrated. However, the base region 14- eis also disposed in the other end portion of each mesa portion. In each mesa portion, at least one of the emitter region 12 of the first conductivity type and the contact region 15 of the second conductivity type may be disposed in the region sandwiched between the base regions 14- ein plan view. The emitter region 12 of this example is N +- like and the contact region 15 is P +- like. The emitter region 12 and the contact region 15 may be disposed between the base region 14 and the upper surface of the semiconductor substrate 10 in the depth direction.The mesa portion 60 of the transistor portion 70 includes the emitter region 12 exposed to the upper surface of the semiconductor substrate 10. The emitter region 12 is connected to the gate trench portion 40. The mesa portion 60 connected to the gate trench portion 40 may include the contact region 15 exposed to the upper surface of the semiconductor substrate 10.The contact region 15 and the emitter region 12 in the mesa portion 60 are each arranged from one trench portion in the X-axis direction to the other trench portion. For example, the contact region 15 and the emitter region 12 of the mesa portion 60 are alternately arranged along the extension direction (Y-axis direction) of the trench portion.In another example, the contact region 15 and the emitter region 12 of the mesa portion 60 may be arranged in a stripe shape along the extension direction (Y-axis direction) of the trench portion. For example, the emitter region 12 is disposed in a region connected to the trench portion, and the contact region 15 is disposed in a region sandwiched between the emitter regions 12.The emitter region 12 is not disposed in the mesa portion 61 of the diode portion 80. The base region 14 and the contact region 15 may be disposed on the upper surface of the mesa portion 61. The contact region 15 may be disposed connected to each of the base regions 14- ein a region sandwiched between the base regions 14- eon the upper surface of the mesa portion 61. The base region 14 may be disposed in a region sandwiched between the contact regions 15 on the upper surface of the mesa portion 61. The base region 14 may be provided in the entire region enclosed between the contact regions 15.The contact hole 54 is disposed over each mesa portion. The contact hole 54 of this example is provided over each of the contact region 15, the base region 14 and the emitter region 12, respectively. The contact hole 54 of this example is provided over each of the contact region 15, the base region 14 and the emitter region 12, respectively. The contact hole 54 is not disposed in a region corresponding to the base region 14-e and the drain region 11. The contact hole 54 may be disposed at the center in the arrangement direction (X-axis direction) of the mesa portion 60.In the diode portion 80, an n +- type cathode region 82 is disposed in a region adjacent to the lower surface of the semiconductor substrate 10. In the lower surface of the semiconductor substrate 10, a P +- type collector region 22 may be disposed in a region where the cathode region 82 is not disposed. The cathode region 82 and the collector region 22 are disposed between the lower surface 23 of the semiconductor substrate 10 and the buffer region 20. In FIG. 10, the boundary between the cathode region 82 and the collector region 22 is shown with a dotted line.The cathode region 82 is disposed spaced apart from the drain region 11 in the Y-axis direction. As a result, a distance between the P-type region (well region 11) of relatively high doping concentration formed to a deep position and the cathode region 82 is secured, and the withstand voltage can be improved. The end of the cathode region 82 of this example is located farther from the drain region 11 in the Y-axis direction than the end of the contact hole 54 in the Y-axis direction. In another example, the end of the cathode region 82 in the Y-axis direction may be disposed between the well region 11 and the contact hole 54.FIG. 11 is a diagram illustrating an example of a cross section b-b in FIG. 10. The cross section b-b is an XZ plane passing through the emitter region 12 and the cathode region 82. The semiconductor device 100 of this example includes, in cross section, the semiconductor substrate 10, an interlayer dielectric film 38, the emitter electrode 52, and a collector electrode 24.The interlayer dielectric film 38 is disposed on the upper surface of the semiconductor substrate 10. The interlayer dielectric film 38 is a film including at least one of a dielectric film such as silicate glass to which an impurity such as boron or phosphorus is added, a thermal oxide film, and other dielectric films. The interlayer dielectric film 38 is disposed in contact with the contact hole 54 described in FIG. 10.The emitter electrode 52 is disposed above the interlayer dielectric film 38. The emitter electrode 52 is connected to the upper surface 21 of the semiconductor substrate 10 through the contact hole 54 of the interlayer dielectric film 38. The collector electrode 24 is disposed on the lower surface 23 of the semiconductor substrate 10. The emitter electrode 52 and the collector electrode 24 are formed of a metal such as aluminum. In the present specification, the direction (Z-axis direction) connecting the emitter electrode 52 and the collector electrode 24 is referred to as a depth direction.The semiconductor substrate 10 has an N-type or N-type drift region 18. The drift region 18 is arranged in the transistor section 70 and in the diode section 80, respectively.In the mesa portion 60 of the transistor portion 70, an N +- type emitter region 12 and a P -- type base region 14 are arranged in order from the upper surface 21 of the semiconductor substrate 10. The drift region 18 is disposed below the base region 14. The mesa portion 60 may include an N +- type accumulation region 16. The accumulation region 16 is arranged between the base region 14 and the drift region 18.The emitter region 12 is exposed to the upper surface 21 of the semiconductor substrate 10 and is disposed connected to the gate trench portion 40. The emitter region 12 may be disposed connected to the trench portions on both sides of the mesa portion 60. The emitter region 12 has a higher doping concentration than the drift region 18.The base region 14 is disposed below the emitter region 12. The base region 14 of this example is disposed in connection with the emitter region 12. The base region 14 may be disposed connected to the trench portions on both sides of the mesa portion 60.The accumulation region 16 is disposed below the base region 14. The accumulation region 16 is an N +- type region having a higher doping concentration than the drift region 18. by providing the accumulation region 16 having a high concentration between the drift region 18 and the base region 14, the boost effect of carrier injection (IE effect) can be increased and the ON voltage can be reduced. The accumulation region 16 may be disposed covering the entire lower surface of the base region 14 in each mesa portion 60.The mesa portion 61 of the diode portion 80 has a P -- type base region 14 connected to the upper surface 21 of the semiconductor substrate 10. The drift region 18 is disposed below the base region 14. In the mesa portion 61, the accumulation region 16 may be disposed below the base region 14.In each of the transistor portion 70 and the diode portion 80, an N +- type buffer region 20 may be disposed below the drift region 18. The doping concentration of the buffer region 20 is higher than the doping concentration of the drift region 18. the buffer region 20 comprises a concentration peak 25 having a higher doping concentration than the drift region 18. The doping concentration of the concentration peak 25 indicates a doping concentration at the local maximum value of the concentration peak 25. As the doping concentration of the drift region 18, an average value of the doping concentrations in a region where the distribution of the doping concentration is substantially flat may be used. The doping concentration of the drift region 18 may be an average of the doping concentrations in the flat region 150 described in FIG. 3.The buffer region 20 of this example has three or more concentration peaks 25 in the depth direction (Z-axis direction) of the semiconductor substrate 10. The buffer region 20 may serve as a field stop layer that prevents a depletion layer spreading from a lower end of the base region 14 from reaching the P +- type collector region 22 and the N +- type cathode region 82.In the transistor section 70, the P +- type collector region 22 is disposed below the buffer region 20. The acceptor concentration of the collector region 22 is higher than the acceptor concentration of the base region 14. the collector region 22 may include the same acceptor as the base region 14 and may include a different acceptor. The acceptor of the collector region 22 is, for example, boron.In the diode portion 80, the N +- type cathode region 82 is disposed below the buffer region 20. The donor concentration of the cathode region 82 is higher than the donor concentration of the drift region 18. Elements that become donors and acceptors in each region are not limited to the above-described examples. The collector region 22 and the cathode region 82 are exposed on the lower surface 23 of the semiconductor substrate 10 and are connected to the collector electrode 24. The collector electrode 24 may be in contact with the entire lower surface 23 of the semiconductor substrate 10. The emitter electrode 52 and the collector electrode 24 are formed of a metal such as aluminum.One or more gate trench portions 40 and one or more dummy trench portions 30 are disposed on the upper surface side 21 of the semiconductor substrate 10. Each trench portion penetrates from the upper surface 21 of the semiconductor substrate 10 into the base region 14 and reaches the drift region 18. In the region where at least any one of the emitter region 12, the contact region 15, and the accumulation region 16 is disposed, each trench portion also penetrates into these impurity regions and reaches the drift region 18. A case where a doping region is formed between the trench portions after the trench portion is formed is also included in a case where the trench portion enters the doping region.As described above, the transistor portion 70 includes the gate trench portion 40 and the dummy trench portion 30. The diode portion 80 includes the dummy trench portion 30 and no gate trench portion 40. In this example, the boundary between the diode portion 80 and the transistor portion 70 in the X-axis direction is the boundary between the cathode region 82 and the collector region 22.The gate trench portion 40 includes a gate trench, a dielectric insulating film 42, and a conductive gate portion 44 disposed on the upper surface 21 of the semiconductor substrate 10. The gate insulating film 42 is disposed covering an inner wall of the gate trench. The gate insulating film 42 may be formed by oxidizing or nitriding the semiconductor on the inner wall of the gate trench. The gate line portion 44 is formed in the gate insulating film 42 in the gate trench. That is, the gate insulating film 42 isolates the gate conductive portion 44 from the semiconductor substrate 10. The conductive gate portion 44 is formed of a conductive material such as polysilicon.The gate line portion 44 may be longer than the base region 14 in the depth direction. The gate lead portion 44 is electrically connected to the gate runner 15. When a predetermined gate voltage is applied to the gate line portion 44, a channel is formed by an inversion layer of electrons in a surface layer of the boundary in contact with the gate trench portion 40 of the base region 14.The dummy trench portion 30 may have the same structure as the gate trench portion 40 in cross section. The dummy trench portion 30 includes a dummy trench in the upper surface 21 of the semiconductor substrate 10, a dummy insulating film 32, and a dummy conductive portion 34. The dummy insulating film 32 covers the inner wall of the dummy trench. The dummy line portion 34 is disposed in the dummy trench and inside the dummy insulating film 32. The dummy insulating film 32 isolates the dummy line portion 34 from the semiconductor substrate 10. For example, the dummy conductive portion 34 is formed of a conductive material such as polysilicon. The dummy line portion 34 may have the same length in the depth direction as the gate line portion 44.The gate trench portion 40 and the dummy trench portion 30 of this example are covered by the interlayer dielectric film 38 in the upper surface 21 of the semiconductor substrate 10. Note that the bottoms of the dummy trench portion 30 and the gate trench portion 40 may have a curved surface shape (a curved shape in cross section) protruding downward.As described in FIGS. 1 to 8, the semiconductor substrate 10 has the first hydrogen concentration peak 101 and the first donor concentration peak 111 at the depth position Z 1, and the second hydrogen concentration peak 102 and the second donor concentration peak 112 at the depth position Z 2.The depth position Z 1 can lie in the accumulation region 16, between a lower end position Zt of the trench section and an upper end position Zf of the buffer region 20 or in the buffer region 20. Similarly, the depth position Z 2 may be located in the accumulation region 16, between the trench portion lower end position Zt and the buffer region upper end position Zf 20, or in the buffer region 20.FIG. 12 is a diagram illustrating another example of the passage region 106- 1 and the passage region 106- 2. The passage area 106- 1 and the passage area 106- 2 of this example do not overlap. That is, the through region 106- 1 and the through region 106- 2 are arranged apart from each other in the depth direction.In this example, hydrogen ions are implanted from the upper surface 21 side of the semiconductor substrate 10 to the depth position Z 1 of the semiconductor substrate 10. Hydrogen ions are implanted from the lower surface 23 side of the semiconductor substrate 10 to a depth position Z 2 that is closer to the lower surface 23 side than the depth position Z 1. The depth positions Z 1 and Z 2 in this example are arranged between the trench portion lower end position Zt and the buffer region upper end position Zf.FIG. 13 is a diagram illustrating an example of a distribution of the doping concentration along the line D-D in FIG. 12. In this example, the distribution of donor concentration in each region is illustrated in addition to the distribution of donor concentration due to VOH defects.Volume donors such as phosphorus are continuously distributed in the semiconductor substrate 10. The emitter region 12 comprises an N-type dopant such as phosphorus. The base region 14 includes a P-type dopant such as boron. The accumulation region 16 includes an N-type dopant such as phosphorus or hydrogen.The drift region 18 contains hydrogen at least in a part of the region. In the drift region 18, the first donor concentration peak 111 and the second donor concentration peak 112 are arranged.The buffer region 20 of this example includes a plurality of concentration peaks 25-1, 25-2, 25-3 and 25-4 in the distribution of doping concentration. Each concentration peak 25 is formed by implanting hydrogen ions. The collector region 22 includes a P-type dopant such as boron.FIG. 14 is a diagram illustrating an example of the distribution of the chemical hydrogen concentration and the distribution of the donor concentration in a region near the depth position Z 1 and the depth position Z 2 illustrated in FIG. 13. In this example, hydrogen does not pass through the region between the depth position Z 1 and the depth position Z 2. Thus, no VOH defect is formed in the region. On the other hand, VOH defects are formed in a region between the depth position Z 1 and the upper surface 21 and a region between the depth position Z 2 and the lower surface 23.In this example, the intermediate donor concentration Dc in the intermediate donor distribution 113 between the depth position Z 1 and the depth position Z 2 is lower than the upper surface side donor concentration Ds 1 in the upper surface side donor distribution 114 and the lower surface side donor concentration Ds 2 in the lower surface side donor distribution 115. The intermediate donor concentration Dc may be the same as the volume doping concentration Db. Both the upper surface side donor concentration Ds 1 and the lower surface side donor concentration Ds 2 are higher than the volume doping concentration Db. The upper surface side donor concentration Ds 1 and the lower surface side donor concentration Ds 2 may be twice or more, three times or more, or five times or more the intermediate donor concentration Dc.Also in this example, the depth position Z 1 and the depth position Z 2 may be arranged similarly to the examples illustrated in FIGS. 2 to 8. However, the depth positions Z 1 and Z 2 are preferably between the depth positions Zt and Zf. For example, as illustrated in FIG. 5, both the first hydrogen concentration peak 101 and the second hydrogen concentration peak 102 may be located on the upper surface 21 side of the semiconductor substrate 10. As a result, the region of the intermediate donor distribution 113 having a relatively low donor concentration may be disposed on the upper surface 21 side of the semiconductor substrate 10. Depending on the configuration of the semiconductor device 100, the electric field is likely to concentrate on the upper surface 21 side. Even in such a case, the electric field strength of the upper surface 21 side can be reduced by disposing the intermediate donor distribution 113 on the upper surface 21 side.In each of the examples illustrated in FIGS. 1 to 14, the distance between the depth positions Z 1 and Z 2 in the depth direction may be 1 / 2 times or less the thickness of the semiconductor substrate 10 in the depth direction. The distance may be 1 / 4 or less or 1 / 10 or less of the thickness. In the example of FIG. 13, the donor concentration of the semiconductor substrate 10 can be adjusted by reducing the pitch within a wide range in the depth direction.FIG. 15 is a diagram illustrating an example of a manufacturing method of the semiconductor device 100 described in FIGS. 1 to 14. The manufacturing method includes a hydrogen implantation step including an upper surface implantation step of implanting hydrogen ions from the upper surface 21 of the semiconductor substrate 10 to a first depth position, and a lower surface implantation step of implanting hydrogen ions from the lower surface 23 of the semiconductor substrate to a second depth position different from the first depth position. In FIG. 15, the lower surface implantation step is performed in step S 408. In FIG. 15, the upper surface implantation step is one of steps S 1412, S 1413, S 1414, and S 1415. The first depth position is one of the depth positions Z 1 and Z 2, and the second depth position is the other of the two depth positions Z 1 and Z 2.In this example, in step S 400 the structure is formed on the upper surface of the semiconductor device 100. The upper surface structure refers to a structure of the semiconductor substrate 10 disposed on the upper surface 21 side, and includes, for example, the trench portion, the emitter region 12, the base region 14, the accumulation region 16, the interlayer dielectric film 38, the emitter electrode 52, the gate runner, and the like.Next, in step S 1402, the bottom surface 23 side of the semiconductor substrate 10 is ground to adjust the thickness of the semiconductor substrate 10. Thereafter, in step S 141, hydrogen ions may be implanted from the upper surface 21 side of the semiconductor substrate 10. However, the implanting of hydrogen ions from the upper surface 21 side may be performed at another timing described later. In step S 1412, hydrogen ions are implanted into the depth position Z 1 or the depth position Z 2. The depth position Z 2 may be between the depth position Z 1 and the bottom surface 23.In the examples of FIGS. 1 to 8, hydrogen ions are implanted from the upper surface 21 to the depth position Z 2 in step S 1412. In the examples of FIGS. 12 to 14, hydrogen ions are implanted from the upper surface 21 to the depth position Z1 in step S1412.Thereafter, in step S 1404, a P-type impurity is implanted into the collector region 22. In step S 1404, an N-type dopant may also be implanted into the cathode region 82. Thereafter, in step S 1413, hydrogen ions may be implanted from the upper surface 21 side of the semiconductor substrate 10. Step S 1413 is similar to step S 1412. When step S 1413 is executed, step S 1412 may not be executed.Next, in step S 1406, the region near the bottom surface 23 is irradiated with a laser to perform laser annealing. Thus, the cathode region 82 and the collector region 22 are formed. If step S 1412 or step S 1413 is performed before step S 1416, excessive defects formed by water ion implantation may be cured by laser annealing in step S 1406. Specifically, in step S 1412 or step S 1413, the accelerating energy of the hydrogen ions increases when hydrogen ions are implanted from the upper surface 21 to the area of the lower surface 23 side, so that too many defects are likely to form. In this case, the excessive defects in the vicinity of the bottom surface 23 may be cured by step S 1406.Thereafter, in step S 1414, hydrogen ions may be implanted from the upper surface 21 side of the semiconductor substrate 10. Step S1414 is similar to step S1412. When step S 1414 is executed, step S 1412 and step S 1413 may not be executed. Thereafter, in step S 408, hydrogen ions are implanted from the bottom surface 23 side. In step S 408, hydrogen ions are implanted from the lower surface to the depth position Z 1 or the depth position Z 2. As described above, the depth position at which hydrogen ions are implanted from the upper surface 21 side is different from the depth position at which hydrogen ions are implanted from the lower surface 23 side.In the example of FIGS. 1 to 8, in step S 408, hydrogen ions are implanted from the lower surface 23 to the depth position Z 1. In the examples of FIGS. 12 to 14, in step S sub408, hydrogen ions are implanted from the lower surface 23 to the depth position Z 2.Thereafter, in step S 1415, hydrogen ions may be implanted from the upper surface 21 side of the semiconductor substrate 10. Step S 1415 is similar to step S 1412. When step S 1415 is executed, step S 1412, step S 1413, and step S 1414 may not be executed. By executing step S 1414 or step S 1415 after step S 1416, it is possible to suppress excessive recovery from void defects in the vicinity of the bottom surface 23 formed by laser annealing in step S 1414 or step S 1415. Therefore, the donor concentration of the semiconductor substrate 10 can be accurately controlled.Next, the semiconductor substrate 10 is heat-treated in step S 1410. In step S 1410, the entire semiconductor substrate 10 may be heat treated in a annealing furnace. As a result, hydrogen is diffused to promote the formation of VOH defects. The temperature of the heat treatment in step S 1410 may be 350° C. or more and 380° C. or less. The upper limit of the temperature of the heat treatment may be 360° C. or less. After step S 141, a structure such as the collector electrode 24 is formed. Thus, the semiconductor device 100 can be manufactured.The heat treatment step shown in step S 1410 may be performed twice after hydrogen is implanted from one of the lower surface 21 or the upper surface 23 and after hydrogen is implanted from the other of the lower surface 21 or the upper surface 23. In addition, the step of implanting hydrogen from the upper surface 21 and the step of implanting hydrogen from the lower surface 23 may be performed only when the accelerating energy of hydrogen is higher. Also in this case, the heat treatment may be performed each time hydrogen is implanted. In particular, the temperature of the first heat treatment step after performing the hydrogen implantation step with higher acceleration energy may be higher than the temperature of the second heat treatment step after performing the hydrogen implantation step with lower acceleration energy. The temperature of the first heat treatment step is 360° C. or more and 380 ° C. or less. The temperature in the second heat treatment step may be lower than 360° C. When the acceleration energy is higher, void defects are more likely to be formed, so that VOH defects can be efficiently formed by raising the temperature of the heat treatment in the first heat treatment step.It should be noted that the order of execution of each operation, such as operations, procedures, steps, and steps, in the apparatuses, systems, programs, and methods illustrated in the claims, the specification, and the drawings may be realized in any order unless "before", "before", or the like is expressly stated, and unless the result of the previous operation is used in the later operation. Although the operation in the claims, the description, and the drawings is described as "first", "next", and the like for convenience, this does not mean that this order must be strictly followed.LIST OF REFERENCE CHARACTERS10 Semiconductor substrate 11 Drain region 12 Emitter region 14 Base region 15 Contact region 16 Accumulation region 18 Drift region 20 Buffer region 21 Upper surface 22 Collector region 23 Lower surface 24 Collector electrode 25 Peak 29 Linear portion 30 Dummy trench portion 31 Edge portion 32 Dummy dielectric film 34 Dummy conductive portion 38 Interlayer dielectric film 39 Linear portion 40 Gate trench portion 41 Edge portion 42 Gate insulating film 44 Gate conductive portion 52 Emitter electrode 54 Contact hole 60, 61 mesa portion 70 transistor portion 80 diode portion 81 extension region 82 cathode region 90 edge termination structure portion 100 semiconductor device 101 first hydrogen concentration peak 102 second hydrogen concentration peak 103 intermediate hydrogen distribution 104 upper surface side hydrogen distribution 105 lower surface side hydrogen distribution 106 passage region 111 first donor concentration peak 112 second donor concentration peak 113 intermediate donor distribution 114 upper surface side donor distribution 115 lower surface side donor distribution 130 outer peripheral gate runner 131 active side gate runner 150 flat portion 160 active portion 162 edge 164 gate pad

Claims

A semiconductor device (100) comprising: a semiconductor substrate (10) having an upper surface (21) and a lower surface (23), wherein a chemical hydrogen concentration distribution of the semiconductor substrate (10) in the depth direction has a first hydrogen concentration peak (101) and a second hydrogen concentration peak (102) that is closer to the lower surface side of the semiconductor substrate (10) than the first hydrogen concentration peak (101), and wherein an intermediate donor concentration between the first hydrogen concentration peak (101) and the second hydrogen concentration peak (102) is different from an upper surface side donor concentration between the first hydrogen concentration peak (101) and the upper surface (21) of the semiconductor substrate (10) or a lower surface side donor concentration between the second hydrogen concentration peak (102) and the lower surface (23) of the semiconductor substrate (10), wherein the intermediate donor concentration is higher than the upper surface side donor concentration and the lower surface side donor concentration.The semiconductor device (100) according to claim 1, wherein an intermediate hydrogen concentration between the first hydrogen concentration peak (101) and the second hydrogen concentration peak (102) is higher than a hydrogen concentration of the upper surface side between the first hydrogen concentration peak (101) and the upper surface (21) of the semiconductor substrate (10) and a hydrogen concentration of the lower surface side between the second hydrogen concentration peak (102) and the lower surface (23) of the semiconductor substrate (10).The semiconductor device (100) according to claim 1 or 2, wherein the intermediate donor concentration is 1×10 13 / cm 3 or more and 1×10 15 / cm 3 or less.The semiconductor device (100) according to any one of claims 1 to 3, wherein the intermediate donor concentration is 1.5 times or more than each of the upper surface side donor concentration and the lower surface side donor concentration.The semiconductor device (100) according to any one of claims 1 to 4, wherein the chemical hydrogen concentration distribution comprises: a first upper surface side skirt (S1a) in which a hydrogen concentration decreases from the first hydrogen concentration peak (101) toward the upper surface side; a first lower surface side skirt (S1b) in which a hydrogen concentration decreases from the first hydrogen concentration peak (101) toward the lower surface side more gradually than the first upper surface side skirt (S1a); a second lower surface side skirt (S2b) in which a hydrogen concentration decreases from the second hydrogen concentration peak (102) toward the lower surface side; and a second upper surface side skirt (S 2 a) in which a hydrogen concentration gradually decreases from the second hydrogen concentration peak (102) toward the upper surface side than the second lower surface side skirt (S 2 b).The semiconductor device (100) according to any one of claims 1 to 5, wherein the first hydrogen concentration peak (101) is higher than the second hydrogen concentration peak (102), and wherein the lower surface side donor concentration is higher than the upper surface side donor concentration; or wherein the second hydrogen concentration peak (102) is higher than the first hydrogen concentration peak (101), and wherein the upper surface side donor concentration is higher than the lower surface side donor concentration.The semiconductor device (100) according to any one of claims 1 to 5, wherein the first peak (101) of hydrogen concentration is located between a center of a region on the upper surface side in the depth direction and the upper surface, and wherein the second peak (102) of hydrogen concentration is located between a center of a region on the lower surface side in the depth direction and the lower surface.The semiconductor device (100) according to claim 2, wherein the concentration of intermediate hydrogen is 10 times or more as the concentration of intermediate donor.The semiconductor device (100) according to any one of claims 1 to 8, wherein both the lower surface side donor concentration and the upper surface side donor concentration are higher than a volume doping concentration of the semiconductor substrate (10).The semiconductor device (100) according to any one of claims 1 to 9, wherein a distribution of the donor concentration of the semiconductor substrate (10) in the depth direction has a flat portion between both the first hydrogen concentration peak (101) and the upper surface (21) of the semiconductor substrate (10) and between the second hydrogen concentration peak (102) and the lower surface (23) of the semiconductor substrate (10).The semiconductor device (100) according to any one of claims 1 to 10, wherein a distribution of the donor concentration of the semiconductor substrate (10) in the depth direction has a flat portion between the first hydrogen concentration peak (101) and the second hydrogen concentration peak (102).The semiconductor device (100) according to any one of claims 1 to 11, wherein a distance between the first hydrogen concentration peak (101) and the second hydrogen concentration peak (102) in the depth direction is 1 / 2 times or less a thickness of the semiconductor substrate (10) in the depth direction.A manufacturing method of a semiconductor device (100), comprising: implanting hydrogen ions from one of an upper surface (21) and a lower surface (23) of a semiconductor substrate (10) to a first depth position and implanting hydrogen ions from the other of the upper surface (21) and the lower surface (23) of the semiconductor substrate (10) to a second depth position different from the first depth position; and performing heat treatment of the semiconductor substrate (10), wherein the second depth position is between the first depth position and the one of the upper surface (21) and the lower surface (23).The manufacturing method of the semiconductor device (100) according to claim 13, comprising: performing laser annealing of the upper surface (21) and / or the lower surface (23) of the semiconductor substrate (10), wherein the hydrogen implanting is performed after the laser annealing.

Images