INTERCONNECTION STRUCTURE AND SEMICONDUCTOR COMPONENT

Abstract

Connection structure with: a conductive substrate (4) including a conductive section (421, 422, 423, 424); a terminal including an electrically conductive tubular holder (331) and a metal pin (333) inserted into the holder (331); and a conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) that bonds the conductive section (421, 422, 423, 424) and the holder (331) together, wherein the metal pin (333) has a straight portion (333a) extending along a thickness direction (z) of the conductive section (421, 422, 423, 424), wherein the holder (331) has a first through-hole (332) extending in the thickness direction (z) and into which the straight portion (333a) of the metal pin (333) is inserted, wherein the conductive section (421, 422, 423, 424) has a terminal bonding surface (420a) to which the holder (331) is bonded, and has an opening (420b, 53) formed in the terminal bonding surface (420a), wherein at least a part of an outer peripheral edge (331d) of the opening (420b, 53) is arranged on an inner side of an outer peripheral edge (331d) of the holder (331), when viewed in the thickness direction (z), wherein the holder (331) includes a tubular portion (331a) and an upper flange portion (331b) and a lower flange portion (331c) arranged in the thickness direction on respective sides of the tubular portion (331a), wherein the first through-hole (332) penetrates the tubular portion (331a), the upper flange portion (331b) and the lower flange portion (331c) in the thickness direction (z), and wherein the lower flange portion (331c) is bonded to the conductive section (421, 422, 423, 424).

Description

TECHNICAL FIELD

[0001] The present disclosure relates to an interconnect structure and a semiconductor device. STATE OF THE ART

[0002] Semiconductor devices including a power semiconductor element, such as a metal-oxide-semiconductor field-effect transistor (MOSFET) or an insulated-gate bipolar transistor (IGBT), are well known. Such semiconductor devices are applicable to a wide variety of electrical components, ranging from industrial equipment to household electrical appliances, information terminals, automotive-related components, and so on. Patent Document 1 discloses a conventional semiconductor device (power semiconductor module). The power semiconductor module according to Patent Document 1 includes a ceramic circuit board, a power semiconductor element, a metal tube, an external terminal, and a transfer-molded resin (see Fig. 6 of Patent Document 1). The ceramic circuit board includes a ceramic plate and a conductive section (wiring pattern) formed from a copper foil and mounted on the ceramic plate. The power semiconductor element and the metal tube are arranged on the wiring pattern of the ceramic circuit board. The metal tube is bonded to the wiring pattern, for example, using solder. The external terminal is press-fitted into the metal tube, for example. The external terminal protrudes from the upper surface of the injection-molded resin. PRIOR ART DOCUMENTPatent document

[0003] Patent Document 1: JP-A-2010-129795

[0004] Further connection structures and semiconductor components are known from the documents JP 2012- 004 226 A, DE 11 2018 001 927 T5, DE 10 2018 200 830 A1, US 2016 / 0 380 366 A1 and JP 2010- 129 795 A. OVERVIEW OF THE INVENTIONProblem to be solved

[0005] In the power semiconductor device according to Patent Document 1, the external terminal is inserted into the metal tube. In the case of such a structure where the external terminal is inserted into the metal tube, the external terminal may detach from the metal tube if the insertion depth of the external terminal into the metal tube is insufficient.

[0006] The present disclosure has been achieved in view of the above situation and provides a junction structure for the metal tube and a conductive section that is capable of adequately ensuring the insertion depth of the external terminal into the metal tube. Furthermore, the present disclosure also provides a semiconductor device equipped with such a junction structure. Means of solving the problem

[0007] The above object is achieved by a connecting structure according to claim 1 and by a connecting structure according to claim 7-

[0008] In a first aspect, the present disclosure provides an interconnection structure including a conductive substrate having a conductive section, a terminal including an electrically conductive tubular holder, and a metal pin inserted into the holder, wherein a conductive bonding material bonds the conductive section and the holder together. The metal pin includes a straight portion extending along a thickness direction of the conductive section. The holder has a first through-hole extending in the thickness direction and into which the straight portion of the metal pin is inserted.The conductive section includes a terminal bonding surface to which the holder is bonded, and an opening formed in the terminal bonding surface, wherein at least a part of an outer peripheral edge of the opening is located on an inner side of an outer peripheral edge of the holder when viewed in the thickness direction.

[0009] In a second aspect, the present disclosure provides a semiconductor device having an interconnection structure according to the invention and having a semiconductor element electrically connected to the terminal. Advantages of the invention

[0010] With the connection structure according to the present disclosure, the insertion depth of the metal pin into the holder can be adequately ensured. Furthermore, the semiconductor device according to the present disclosure includes the connection structure that ensures the adequate insertion depth of the metal pin into the holder, and thus the metal pin can be prevented from detaching from the holder. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a semiconductor device according to an embodiment. Fig. 2 is a perspective view corresponding Fig. 1, from which a plurality of wires, a resin member, a resin portion and a resin filling are omitted. Fig. 3 is a perspective view corresponding Fig. 2, compared to which one line element (first line element and second line element) is omitted. Fig. 4 is a plan view showing the semiconductor device according to the embodiment. Fig. 5 is a plan view according to Fig. 4, in which the resin element, the resin section and the resin filling are shown by imaginary lines. Fig. 6 is a partially enlarged view of Fig. 5, in which the resin element, the resin section and the resin filling are omitted. Fig. 7 is a plan view corresponding to Fig. 5, in which a part of a line element 5 (second line element) is shown by imaginary lines. Fig. 8 is a partially enlarged plan view of Fig. 7 and shows a connection structure according to the present disclosure. Fig. 9 is a front view showing the semiconductor device according to the embodiment. Fig. 10 is a bottom view showing the semiconductor device according to the embodiment. Fig. 11 is a left side view showing the semiconductor device according to the embodiment. Fig. 12 is a right side view showing the semiconductor device according to the embodiment. Fig. 13 is a cross-sectional view taken along a line XIII-XIII in Fig. 5. Fig. 14 is a cross-sectional view taken along a line XIV-XIV in Fig. 5. Fig. 15 is a partially enlarged cross-sectional view of Fig. 14. Fig. 16 is a cross-sectional view taken along a line XVI-XVI in Fig. 5. Fig. 17 is a cross-sectional view taken along a line XVII-XVII in Fig. 5. Fig. 18 is a cross-sectional view taken along a line XVIII-XVIII in Fig. 5. Fig. 19 is a cross-sectional view taken along a line XIX-XIX in Fig. 5. Fig. 20 is a cross-sectional view taken along a line XX-XX in Fig. 5. Fig. 21 is a partially enlarged cross-sectional view of Fig. 20 and shows the connection structure according to the present disclosure. Fig. 22 is a circuit diagram showing an exemplary circuit configuration of the semiconductor device according to the embodiment. Fig. 23 is a partially enlarged cross-sectional view showing a variation of the connection structure according to the present disclosure. Fig. 24 is a partially enlarged cross-sectional view showing another variation of the connection structure according to the present disclosure. Fig. 25 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment. Fig. 26 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment. Fig. Fig. 27 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment Fig. 28 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment. Fig. 29 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment. Fig. 30 is a partially enlarged plan view showing still another variation of the connection structure according to the present embodiment. Fig. 31 is a perspective view showing a variation of the semiconductor device according to the present disclosure, from which the plurality of wires, the resin member, the resin portion, and the resin filler are omitted. MODE FOR CARRYING OUT THE INVENTION

[0011] Exemplary embodiments of an interconnect structure and a semiconductor device according to the present disclosure will be described below with reference to the drawings. In the drawings, identical or similar elements are designated by the same reference numerals, and the description of such elements will not be repeated. The terms "first," "second," "third," etc., used in the present disclosure serve merely as a label and are not intended to specify any order with respect to the objects accompanied by these terms.

[0012] In the description of the present disclosure, the phrases "object A is formed in an object B" and "an object A is formed on an object B" imply the situation where, unless specifically stated otherwise, "the object A is formed directly in or on the object B" and "the object A is formed in or on the object B with something else disposed between the object A and the object B." Similarly, the phrases "an object A is arranged in an object B" and "an object A is arranged on an object B" imply the situation where, unless specifically stated otherwise, "the object A is arranged directly in or on the object B" and "the object A is arranged on the object B with something else disposed between the object A and the object B."Furthermore, the expression "an object A is located on an object B" implies the situation where, unless specifically stated otherwise, "the object A is located on the object B, in contact with the object B," and "the object A is located on the object B with something else interposed between the object A and the object B." Furthermore, the expression "an object A overlaps an object B when viewed in a certain direction" implies the situation where, unless specifically stated otherwise, "the object A overlaps the entire object B" and "the object A overlaps part of the object B."

[0013] Fig. 1 to Fig. 22 each illustrates an example of a semiconductor device A1 according to the present disclosure. The semiconductor device A1 includes a plurality of semiconductor elements 1, a base substrate 2, a first power terminal 31, a second power terminal 32, a plurality of control terminals 33, a conductive substrate 4, a conduction member 5, a plurality of conductive bonding materials 61 and 63, a plurality of wires 651 to 654, and a resin member 7. The conductive substrate 4 includes a first conductive substrate 4A and a second conductive substrate 4B. The conduction member 5 includes a first conductive element 51 and a second conductive element 52.

[0014] For convenience of description, the thickness direction of the semiconductor device A1 is referred to as the “thickness direction z.” In the following description, one side in the thickness direction z may be referred to as an upper side, and the other side as a lower side. The terms “top,” “bottom,” “upward,” “downward,” “upper surface,” “lower surface,” etc., indicate relative positional relationships between the components with respect to the thickness direction z and are not necessarily intended to define the relationship with respect to the direction of gravity. In addition, the term “in a plan view” refers to a view in the thickness direction z. A direction orthogonal to the thickness direction z is referred to as the “first direction x.” For example, the first direction x corresponds to the left-right direction in the plan view of the semiconductor device A1 (see Fig. 4 and Fig. 5). A direction perpendicular to the thickness direction z and to the first direction x is referred to as the “second direction y”. For example, the second direction y corresponds to the up-down direction in the plan view of the semiconductor device A1 (see Fig. 4 and Fig. 5).

[0015] The plurality of semiconductor elements 1 each serve as a functional center of the semiconductor component A1. The semiconductor elements 1 each contain, for example, silicon carbide (SiC). The material of the semiconductor elements 1 can be silicon (Si), gallium arsenide (GaAs), or gallium nitride (GaN), without limitation to SiC. Each of the semiconductor elements 1 is, for example, a switching element. The semiconductor elements 1 each contain a switching action unit Q1 (see Fig. 22) constructed of a metal-oxide-semiconductor field-effect transistor (MOSFET). The switching action unit Q1 may be constructed of a transistor other than a MOSFET, for example, a field-effect transistor, including a metal-insulator-semiconductor FET (MISFET), or a bipolar transistor such as an IGBT. The plurality of semiconductor elements 1 are of the same type as each other. Although the semiconductor elements 1 may be configured as, for example, an n-channel MOSFET, the semiconductor elements 1 may instead be configured as a p-channel MOSFET.

[0016] The plurality of semiconductor elements 1 includes, as shown in Fig. 3 and in Fig. 7, at least one first semiconductor element 1A and at least one second semiconductor element 1B. In the illustrated example, the semiconductor device A1 includes a plurality (three) of the first semiconductor elements 1A and a plurality (three) of the second semiconductor elements 1B. However, the number of the first semiconductor elements 1A and the number of the second semiconductor elements 1B is not limited to the above number, but can be changed as required according to the performance required for the semiconductor device A1.

[0017] The semiconductor component A1 is constructed, for example, in the form of a half-bridge circuit, as shown in Fig. 22. The plurality of first semiconductor elements 1A form an upper branch circuit of the semiconductor device A1, and the plurality of second semiconductor elements 1B form a lower branch circuit of the semiconductor device A1. In the upper branch circuit, as shown in Fig. 22, the plurality of first semiconductor elements 1A are connected in parallel, and in the lower branch circuit, the plurality of second semiconductor elements 1B are connected in parallel. The first semiconductor elements 1A are each connected in series with a respective one of the second semiconductor elements 1B. In other words, each of the first semiconductor elements 1A is connected in series with each of the three second semiconductor elements 1B.

[0018] The plurality of first semiconductor elements 1A are, as shown in Fig. 3, Fig. 7 and Fig. 16, mounted on the base substrate 2. In the Fig. 3, Fig. 7 and Fig. In the example shown in Figure 16, the plurality of first semiconductor elements 1A are aligned in the second direction y and spaced apart from each other. Fig. 14 and Fig. 15, the first semiconductor elements 1A are each conductively bonded to the base substrate 2 (first conductor 24A, which will be described later) via the conductive bonding material 61 (conductive bonding material 61A, which will be described later).

[0019] The plurality of second semiconductor elements 1B are, as shown in Fig. 3, Fig. 7 and Fig. 17, mounted on the base substrate 2. In the example shown in Fig. 3, Fig. 7 and Fig. 17, the plurality of second semiconductor elements 1B are lined up in the second direction y and spaced apart from each other. As shown in Fig. 14, the second semiconductor elements 1B are each conductively bonded to the base substrate 2 (second conductor 24B, which will be described later) via the conductive bonding material 61 (conductive bonding material 61B, which will be described later). As can be seen from Fig. As is clear from Figure 7, the plurality of first semiconductor elements 1A each overlap with the plurality of second semiconductor elements 1B when viewed in the first direction x. Alternatively, the first semiconductor elements 1A may each be arranged such that they do not overlap with any of the second semiconductor elements 1B when viewed in the first direction x.

[0020] The plurality of semiconductor elements 1 (plurality of first semiconductor elements 1A and plurality of second semiconductor elements 1B) each include, as shown in Fig. 15, an element front surface 10a and an element rear surface 10b. Although Fig. 15 only shows the configuration of the first semiconductor elements 1A, the second semiconductor elements 1B have the same configuration. As shown in Fig. As shown in Fig. 15, in each of the semiconductor elements 1, the element front surface 10a and the element back surface 10b are spaced apart from each other in the thickness direction z. The element front surface 10a is oriented toward one side (upper side) in the thickness direction z, and the element back surface 10b is oriented toward the other side (lower side) in the thickness direction z. When the first semiconductor elements 1A are bonded to the first conductor 24A, the element back surfaces 10b of the respective first semiconductor elements 1A face the first conductor 24A. When the second semiconductor elements 1B are bonded to the second conductor 24B, the element back surfaces 10b of the respective second semiconductor elements 1B face the second conductor 24B.

[0021] The plurality of semiconductor elements 1 (plurality of first semiconductor elements 1A and plurality of second semiconductor elements 1B) each include, as shown in Fig. 7 and Fig. 15, a first front surface electrode 11, a second front surface electrode 12, and a back surface electrode 15. The first front surface electrode 11, the second front surface electrode 12, and the back surface electrode 15 are arranged in the same manner for all of the semiconductor elements 1. The first front surface electrode 11 and the second front surface electrode 12 are arranged on the element front surface 10a of each of the semiconductor elements 1. The first front surface electrode 11 and the second front surface electrode 12 are insulated from each other by an insulating film (not shown). The back surface electrode 15 is arranged on the element back surface 10b of each of the semiconductor elements 1.

[0022] In each of the semiconductor elements 1, the first front surface electrode 11 serves, for example, as a gate to which a drive signal (for example, a gate voltage) for driving the semiconductor element 1 is input. In each of the semiconductor elements 1, the second front surface electrode 12 serves, for example, as a source through which a source current flows. The back surface electrode 15 serves, for example, as a drain through which a drain current flows. The back surface electrode 15 covers the element back surface 10b entirely or generally entirely. The back surface electrode 15 is formed, for example, by Ag plating.

[0023] When the switching action unit Q1 inputs the drive signal (gate voltage) to the first front surface electrode 11 (gate), an electrically connected state and an electrically disconnected state are switched between each other in the semiconductor element 1 according to the drive signal. The operation of switching between the electrically connected state and the unconnected or disconnected state is referred to as a switching action. In the electrically connected state, the current flows from the rear surface electrode 15 (drain) to the second front surface electrode 12 (source), whereas in the disconnected state, such a current does not flow. Accordingly, the semiconductor elements 1 each perform the switching action by means of the switching action unit Q1. The semiconductor device A1 converts a first source voltage (for example, DC voltage) into a second source voltage.Source voltage (for example, AC voltage) by means of the respective switching action units Q1 of the plurality of semiconductor elements 1. The first source voltage is input to the first power terminal 31, and the second source voltage is input to the second power terminal 32.

[0024] Some of the plurality of semiconductor elements 1 (two in the semiconductor device A1) further include a diode functional unit D1 (see Fig. 22), in addition to the switching action unit Q1. In the Fig. 7 each include one of the plurality of first semiconductor elements 1A (uppermost first semiconductor element 1A in the second direction y in Fig. 7) and one of the plurality of second semiconductor elements 1B (lowest second semiconductor element 1B in the second direction y in Fig. 7) the diode functional unit D1. Although the function and purpose of the diode functional unit D1 are not particularly limited, the diode functional unit D1 can be used, for example, for temperature detection. In this case, the diode D2, which is located in Fig. 22, for example, is constructed from a parasitic diode component of the switching action unit Q1. In a variation of the semiconductor component A1, the plurality of semiconductor elements 1 can all be formed without the diode functional unit D1.

[0025] Each of the semiconductor elements 1 including the diode functional unit D1 further includes, as shown in Fig. 7, a pair of third front surface electrodes 13 are formed in addition to the first front surface electrode 11, the second front surface electrode 12, and the rear surface electrode 15. The third front surface electrodes 13 are arranged in the same manner in each of the semiconductor elements 1 that include the diode functional unit D1. The pair of third front surface electrodes 13 are formed on the element front surface 10a, as shown in Fig. 7. The pair of third front surface electrodes 13 are electrically connected to the diode functional unit D1 in each of those semiconductor elements 1 that include the diode functional unit D1.

[0026] The configuration of the plurality of semiconductor elements 1 (a plurality of first semiconductor elements 1A and a plurality of second semiconductor elements 1B) is not limited to the above example. For example, an additional electrode of the same potential as the second front surface electrode 12 (for example, a source electrode) may be formed on the element front surface 10a.

[0027] The base substrate 2 supports the plurality of semiconductor elements 1. The base substrate 2 forms the path for a main circuit current to be switched by the semiconductor elements 1, in cooperation with the conduction element 5. The base substrate 2 includes an insulating layer 21, a front surface metal layer 22, a bonding layer 221, a back surface metal layer 23, a first conductor 24A, a second conductor 24B, and a pair of conductive bonding materials 25A and 25B.

[0028] The insulating layer 21 is formed, for example, from a ceramic with high thermal conductivity. Examples of such ceramics include aluminum nitride (AlN), silicon nitride (SiN), and aluminum oxide (Al2O3). The insulating layer 21 may be formed from an insulating resin layer instead of the ceramic. The insulating layer 21 has, for example, a rectangular shape in a plan view.

[0029] As it is in Fig. 13 to Fig. As can be seen in Figure 15, the insulating layer 21 includes a front surface 21a and a back surface 21b. The front surface 21a and the back surface 21b are spaced apart from each other in the thickness direction z. The front surface 21a is oriented upward in the thickness direction z, and the back surface 21b is oriented downward in the thickness direction z. The front surface 21a and the back surface 21b are flat (or generally flat).

[0030] The front surface metal layer 22 is, as shown in Fig. 13 to Fig. 15, is formed on the front surface 21a. The front surface metal layer 22 is formed, for example, from Cu or a Cu-based alloy. The front surface metal layer 22 may be formed from Al or an Al-based alloy, instead of either Cu or the Cu-based alloy.

[0031] As it is in Fig. 13 and Fig. 14, the front surface metal layer 22 includes a first support portion 22A and a second support portion 22B. The first support portion 22A and the second support portion 22B are spaced apart from each other in the first direction x. The first conductor 24A is bonded to the first support portion 22A and is thus supported thereby. The second conductor 24B is bonded to the second support portion 22B and is thus supported thereby. The first support portion 22A and the second support portion 22B each have a rectangular shape in a plan view, for example.

[0032] The bond layer 221 is, as shown in Fig. 15, is formed on the upper surface of the front-surface metal layer 22 (on each of the first support portion 22A and the second support portion 22B). The bonding layer 221 may be formed, for example, by Ag plating. The bonding layer 221 is provided, for example, to facilitate solid-phase diffusion bonding with the conductive bonding materials 25A and 25B.

[0033] The back surface metal layer 23 is formed on the back surface 21b as shown in Fig. 13 to Fig. 15. The back surface metal layer 23 is formed of the same material as the front surface metal layer 22. The lower surface of the back surface metal layer 23 (surface oriented toward the other side in the thickness direction z) is exposed to the resin member 7, for example, as shown in Fig. 10 and in Fig. 13 to Fig. 15. Alternatively, the lower surface of the back surface metal layer 23 may be covered with the resin member 7. In the case where the lower surface of the back surface metal layer 23 is exposed to the resin member 7, a heat dissipation member (e.g., heat sink) not shown may be attached to the lower surface. The back surface metal layer 23 overlaps with both the first bearing portion 22A and the second bearing portion 22B in a plan view.

[0034] In the case where the front surface metal layer 22 and the back surface metal layer 23 of the base substrate 2 are formed of Cu or a Cu-based alloy, the insulating layer 21, the front surface metal layer 22, and the back surface metal layer 23 are formed, for example, of a direct bonded copper (DBC) substrate. When the front surface metal layer 22 and the back surface metal layer 23 are instead formed of Al or an Al-based alloy, the insulating layer 21, the front surface metal layer 22, and the back surface metal layer 23 are formed, for example, of a direct bonded aluminum (DBA) substrate.

[0035] The first conductor 24A and the second conductor 24B are each a plate-shaped element formed from a metal. The metal is, for example, Cu or a Cu-based alloy. The first conductor 24A and the second conductor 24B, together with the first power terminal 31 and the second power terminal 32, form the conduction path to the plurality of semiconductor elements 1. The first conductor 24A and the second conductor 24B are spaced apart from each other in the first direction x, as shown in Fig. 7, Fig. 13 and Fig. 14. The first conductor 24A and the second conductor 24B each have a rectangular shape in a plan view, as shown in Fig. 7. The first conductor 24A and the second conductor 24B overlap each other when viewed in the first direction x. The first conductor 24A and the second conductor 24B may each have a size of 15 mm to 25 mm, inclusive, in the first direction x (preferably 20 mm), and may have a size of 30 mm to 40 mm, inclusive, in the second direction y (preferably 35 mm), and may have a size in a range of 1.5 mm to 3.0 mm, inclusive, in the thickness direction z (preferably 2.0 mm). Such sizes of the first conductor 24A and the second conductor 24B may be modified depending on the specification of the semiconductor device A1, without being limited to the above values.

[0036] The first conductor 24A contains, as shown in Fig. 15, a base material 241, a front surface bonding layer 242, and a back surface bonding layer 243. The second conductor 24B includes, similarly to the first conductor 24A, a base material 241, the front surface bonding layer 242, and the back surface bonding layer 243. The base material 241, the front surface bonding layer 242, and the back surface bonding layer 243 are configured in the same manner in both the first conductor 24A and the second conductor 24B. The base material 241 is a plate-shaped member formed of a metal. The metal is, for example, Cu or a Cu-based alloy. The front surface bonding layer 242 is formed on the upper surface of the base material 241 (the surface oriented upward in the thickness direction z). The front surface bonding layer 242 forms the surface layer of both the first conductor 24A and the second conductor 24B on the upper side in the thickness direction z.The front-surface bonding layer 242 is formed, for example, by Ag plating. The back-surface bonding layer 243 is formed on the lower surface of the base material 241 (the surface oriented downward in the thickness direction z). The back-surface bonding layer 243 forms the surface layer of both the first conductor 24A and the second conductor 24B, on the lower side in the thickness direction z. The back-surface bonding layer 243 is formed, for example, by Ag plating, just like the front-surface bonding layer 242.

[0037] As it is in Fig. 13 to Fig. 16 and in Fig. 20, the first conductor 24A is bonded to the first bearing portion 22A via the conductive bonding material 25A. As shown in Fig. 14 to Fig. 16 and in Fig. As shown in FIG. 20, the plurality of first semiconductor elements 1A are bonded to the upper surface of the first conductor 24A (the surface oriented upward in the thickness direction z) via the conductive bonding material 61 (conductive bonding material 61A, which will be described later). The respective back surface electrodes 15 (drain) of the plurality of first semiconductor elements 1A are electrically connected to each other via the first conductor 24A.

[0038] As it is in Fig. 13, Fig. 14, Fig. 17 and Fig. 18, the second conductor 24B is bonded to the second bearing portion 22B via the conductive bonding material 25B. As shown in Fig. 14 and Fig. As shown in FIG. 17, the plurality of second semiconductor elements 1B are bonded to the upper surface of the second conductor 24B (the surface oriented upward in the thickness direction z) via the conductive bonding material 61 (conductive bonding material 61A, which will be described later). The respective back surface electrodes 15 (drain) of the plurality of second semiconductor elements 1B are electrically connected to each other via the second conductor 24B.

[0039] As it is in Fig. 7 and Fig. As shown in Fig. 13, a plurality of recesses 240a are formed in the upper surface in the thickness direction z of both the first conductor 24A and the second conductor 24B. Each of the recesses 240a is recessed in the thickness direction z from the upper surface of the first conductor 24A or the second conductor 24B in the thickness direction z. The recesses 240a are formed at the time of molding the resin member 7. The two recesses 240a formed on the upper surface of the first conductor 24A in the thickness direction z are spaced from each other in the second direction y and overlap each other when viewed in the second direction y. The two recesses 240a formed on the upper surface of the second conductor 24B in the thickness direction z are spaced apart from each other in the second direction y and overlap each other when viewed in the second direction y.

[0040] As it is in Fig. 13 to Fig. 15 and in Fig. 20, the conductive bonding material 25A is arranged between the first bearing portion 22A and the first conductor 24A. The conductive bonding material 25A serves to attach or fix the first conductor 24A to the first bearing portion 22A. The conductive bonding material 25B is, as shown in Fig. 13, Fig. 14, Fig. 17 and Fig. 18, is arranged between the second support portion 22B and the second conductor 24B. The conductive bonding material 25B serves to attach the second conductor 24B to the second support portion 22B.

[0041] The conductive bond material 25A includes, as shown in Fig. 15, a base layer 251, an upper layer 252, and a lower layer 253. The conductive bonding material 25B, like the conductive bonding material 25A, also includes the base layer 251, the upper layer 252, and the lower layer 253. In each of the conductive bonding materials 25A and 25B, the base layer 251, the upper layer 252, and the lower layer 253 are stacked or layered. The base layer 251, the upper layer 252, and the lower layer 253 are configured in the same manner in both the conductive bonding materials 25A and 25B.

[0042] The base layer 251 is formed from a metal, for example, Al or an Al-based alloy. The base layer 251 is formed, for example, from a sheet material.

[0043] The upper layer 252 is formed on the upper surface of the base layer 251. The upper layer 252 is formed, for example, by Ag plating. In the conductive bonding material 25A, the upper layer 252 is arranged between the base layer 251 and the first conductor 24A. The upper layer 252 of the conductive bonding material 25A is bonded to the back surface bonding layer 243 of the first conductor 24A, for example, by solid phase diffusion of the metal. In the conductive bonding material 25B, the upper layer 252 is arranged between the base layer 251 and the second conductor 24B. The upper layer 252 of the conductive bonding material 25B is bonded to the back surface bonding layer 243 of the second conductor 24B, for example, by solid phase diffusion of the metal. Accordingly, the respective upper layers 252 of the pair of conductive bonding materials 25A and 25B and the respective back surface bonding layers 243 of the first conductor 24A and 24B, respectively.of the second conductor 24B are bonded to each other in direct contact at the bonding interface. Here, the term "A and B are bonded to each other by solid-phase diffusion" as used herein refers to the state where A and B are adhered to each other in direct contact at the bonding interface as a result of solid-phase diffusion bonding, which can also be expressed as "A and B form a solid-phase diffusion bonding layer." When solid-phase diffusion bonding is performed under ideal conditions, the bonding interface may not exist due to the diffusion of metal elements. On the other hand, if an inclusion such as an oxide film is present in the surface layer of A and B, or if a void is formed between A and B, such an inclusion or void may be present at the bonding interface.

[0044] The lower layer 253 is formed on the lower surface of the base layer 251. The lower layer 253 is formed, for example, by Ag plating. In the conductive bonding material 25A, the lower layer 253 is arranged between the base layer 251 and the first support portion 22A. The lower layer 253 of the conductive bonding material 25A is bonded to the bonding layer 221 of the first support portion 22A, for example, by solid-phase diffusion of the metal. In the conductive bonding material 25B, the lower layer 253 is arranged between the base layer 251 and the second support portion 22B. The lower layer 253 of the conductive bonding material 25B is bonded to the bonding layer 221 at the second support portion 22B, for example, by solid-phase diffusion of the metal. Accordingly, the respective lower layers 253 of the pair of conductive bonding materials 25A and 25B and the respective bonding layers 221 are bonded to the first support portion 22A and 22B, respectively.the second bearing portion 22B are bonded to each other in direct contact at the bond interface.

[0045] The conductive bonding materials 25A and 25B may be formed of, for example, a solder, a metal paste, or a sintered metal, without limitation to the base layer 251, the upper layer 252, and the lower layer 253 as described above.

[0046] The first power terminal 31 and the second power terminal 32 are each formed of a plate-shaped material made of a metal. The metal is, for example, Cu or a Cu-based alloy. The first power terminal 31 includes one input terminal 31A and two input terminals 31B, and the second power terminal 32 includes two output terminals 32A. The input terminal 31A constitutes an example of the "first input terminal" in the present disclosure, and the input terminals 31B constitute an example of the "second input terminal" in the present disclosure.

[0047] A first source voltage is applied between the input terminal 31A and the two input terminals 31B. In other words, the first source voltage is input to the first power terminal 31. The input terminal 31A is, for example, a positive electrode (P terminal), and each of the two input terminals 31B is, for example, a negative electrode (N terminal). Alternatively, the input terminal 31A may be the negative electrode (N terminal), and each of the two input terminals 31B may be the positive electrode (P terminal). In this case, the wiring arrangement in the package can be modified as necessary according to the change in the polarity of the terminals. A second source voltage is applied to each of the two output terminals 32A. In other words, the second source voltage is input to the second power terminal 32.The plurality of input terminals 31A and 31B and the two output terminals 32A each include a portion covered with the resin member 7 and a portion exposed from the resin member 7.

[0048] The input terminal 31A is, for example, formed integrally with the first conductor 24A, as shown in Fig. 14. Alternatively, the input terminal 31A may be formed separately from the first conductor 24A, but conductively bonded thereto. The input terminal 31A is, as shown in Fig. 7, with respect to the plurality of first semiconductor elements 1A, the input terminal 31A is arranged in the first direction x on the side opposite to the plurality of second semiconductor elements 1B. The input terminal 31A is electrically connected to the first conductor 24A and also to the back surface electrode 15 (drain) of each of the semiconductor elements 1 via the first conductor 24A.

[0049] The two input terminals 31B are each spaced from the first conductor 24A, as shown in Fig. 13. The second conductive element 52 is bonded to each of the two input terminals 31B. The two input terminals 31B are, as shown in Fig. 7, the plurality of first semiconductor elements 1A are arranged at the same position as the input terminal 31A in the first direction x. The two input terminals 31B are each electrically connected to the second conductive element 52, and also to the second front surface electrode 12 (source) of each of the second semiconductor elements 1B, via the second conductive element 52.

[0050] The first power terminal 31 (input terminal 31A and each of the two input terminals 31B) of the semiconductor device A1 protrudes toward one side of the resin member 7 in the first direction x. The input terminal 31A and the two input terminals 31B are spaced apart from each other. The two input terminals 31B are arranged on opposite sides of the input terminal 31A in the second direction y. The input terminal 31A and the two input terminals 31B overlap each other when viewed in the second direction y.

[0051] The two output terminals 32A are, for example, formed integrally with the second conductor 24B, as can be seen from Fig. 7 and Fig. 14. Alternatively, the two output terminals 32A may be formed separately from the second conductor 24B, but conductively bonded thereto. The two output terminals 32A are, as shown, for example, in Fig. 7, the plurality of second semiconductor elements 1B are arranged on the opposite side to the plurality of first semiconductor elements 1A in the first direction x with respect to the plurality of second semiconductor elements 1B. The output terminals 32A are each electrically connected to the second conductor 24B and also to the rear surface electrode 15 (drain) of the second semiconductor elements 1B via the second conductor 24B. In the semiconductor device A1, the number of output terminals 32A is not limited to two, but may be one or three or more. For example, in the case where the semiconductor device A1 includes a single output terminal 32A, it is preferable that the one output terminal 32A be connected to the central position of the second conductor 24B in the second direction y.to minimize a length difference of the conduction paths leading through the second conductor 24B to the first front surface electrode 11 (drain) of each of the second semiconductor elements 1B.

[0052] The plurality of control terminals 33 are pin-shaped terminals for controlling the respective semiconductor element 1. The plurality of control terminals 33 include, as shown in Fig. 1 and Fig. 4, a plurality of first control terminals 34 and a plurality of second control terminals 35.

[0053] The plurality of first control terminals 34 are used to control the plurality of first semiconductor elements 1A. The plurality of first control terminals 34 include, as shown in Fig. 1 and Fig. 4, a first drive terminal 34A and a plurality of first detection terminals 34B to 34D.

[0054] The first control terminal 34A is, as shown in Fig. 7 and Fig. 20, is bonded to the first conductive substrate 4A. The first drive terminal 34A is electrically connected to the respective first front surface electrodes 11 (gate) of the plurality of first semiconductor elements 1A. The first drive terminal 34A serves as the input terminal of the first drive signal. The first drive signal is an electrical signal for driving each of the plurality of first semiconductor elements 1A and, in the example where the first semiconductor element 1A is a MOSFET, is a gate voltage.

[0055] The first detection terminal 34B is bonded to the first conductive substrate 4A as shown in Fig. 7 and Fig. 20. The first detection terminal 34B is electrically connected to the respective second front surface electrodes 12 (source) of the plurality of first semiconductor elements 1A. The first detection terminal 34B serves as the output terminal for a first detection signal. The first detection signal is an electrical signal for detecting the conduction status of the plurality of first semiconductor elements 1A.

[0056] A pair of first detection terminals 34C are each bonded to the first conductive substrate 4A, as shown in Fig. 7 and Fig. 20. The pair of first detection terminals 34C are each electrically connected to the pair of third front surface electrodes 13 of the first semiconductor element 1A having the diode functional unit D1. The pair of first detection terminals 34C are electrically connected to the diode functional unit D1 of the first semiconductor element 1A.

[0057] The first detection terminal 34D is bonded to the first conductive substrate 4A as shown in Fig. 7 and Fig. 20. The first detection terminal 34D is electrically connected to the respective back surface electrodes 15 (drain) of the plurality of first semiconductor elements 1A. The voltage of the back surface electrode 15 of each of the plurality of first semiconductor elements 1A (voltage corresponding to the drain current) is applied to the first detection terminal 34D. The first detection terminal 34D serves as the terminal for detecting the drain signal of the plurality of semiconductor elements 1A (drain detection terminal).

[0058] The plurality of second control terminals 35 are used to control the plurality of second semiconductor elements 1B. The plurality of second control terminals 35 include, as shown in Fig. 1 and Fig. 4, a second drive terminal 35A and a plurality of second detection terminals 35B and 35C.

[0059] The second control terminal 35A is, as shown in Fig. 7 and Fig. 18, is bonded to the second conductive substrate 4B. The second drive terminal 35A is electrically connected to the respective first front surface electrodes 11 (gate) of the plurality of second semiconductor elements 1B. The second drive terminal 35A serves as the input terminal of the second drive signal. The second drive signal is an electrical signal for driving each of the plurality of second semiconductor elements 1B and, in the example where the semiconductor element 1B is a MOSFET, is a gate voltage.

[0060] The second detection terminal 35B is, as shown in Fig. 7 and Fig. 18, is bonded to the second conductive substrate 4B. The second detection terminal 35B is electrically connected to the respective second front surface electrodes 12 (source) of the plurality of second semiconductor elements 1B. The second detection terminal 35B serves as the output terminal of the second detection signal. The second detection signal is an electrical signal for detecting the conduction state or status of each of the plurality of second semiconductor elements 1B.

[0061] The pair of second detection terminals 35C are each bonded to the second conductive substrate 4B as shown in Fig. 7 and Fig. 18. The pair of second detection terminals 35C are each electrically connected to the pair of third front surface electrodes 13 of the second semiconductor element 1B having the diode functional unit D1. The pair of second detection terminals 35C are electrically connected to the diode functional unit D1 of the second semiconductor element 1B.

[0062] The plurality of control terminals 33 (first drive terminal 34A, plurality of first detection terminals 34B to 34D, second drive terminal 35A, and plurality of second detection terminals 35B and 35C) each include a holder 331 and a metal pin 333. The holder 331 and the metal pin 333 are formed in the same manner in all of the control terminals 33.

[0063] The holder 331 is made of a conductive material. As shown in Fig. 18, Fig. 20 and Fig. 21, the holder 331 is bonded to the conductive substrate 4 (either the first conductive substrate 4A or the second conductive substrate 4B) via the conductive bonding material 63. The metal pin 333 is inserted into the holder 331.

[0064] As it is in Fig. 8 and Fig. 21, the holder 331 includes a tubular portion 331a, an upper-end flange portion 331b, and a lower-end flange portion 331c. The tubular portion 331a has, for example, a circular cylindrical shape and is mounted on the semiconductor device A1 so as to present a circular shape in a plan view. The metal pin 333 is inserted into the tubular portion 331a. The upper flange portion 331b and the lower flange portion 331c are formed with the tubular portion 331a interposed therebetween in the thickness direction z. The upper flange portion 331b and the lower flange portion 331c each have, for example, a circular shape in a plan view. Alternatively, the upper flange portion 331b and the lower flange portion 331c may have an elliptical shape or a polygonal shape (including rectangular) in a plan view.The upper flange portion 331b and the lower flange portion 331c have the same shape and size as each other in a plan view. The upper flange portion 331b and the lower flange portion 331c have a larger size than the tubular portion 331a in a plan view. The upper flange portion 331b is connected to the upper peripheral edge of the tubular portion 331a in the thickness direction z. The upper surface of the upper flange portion 331b is exposed to the resin member 7 (second protruding portion 752 described below) and is covered with a resin portion 77. The lower flange portion 331c is connected to the lower peripheral edge of the tubular portion 331a in the thickness direction z. The lower flange portion 331c is bonded to the conductive substrate 4 via the conductive bonding material 63.

[0065] The holder 331 contains, as shown in Fig. 8 and Fig. 21, a through hole 332. The through hole 332 is, as shown in Fig. 21, is formed so as to extend through or penetrate the holder 331 in the thickness direction z, in other words, to penetrate the tubular portion 331a, the upper flange portion 331b, and the lower flange portion 331c in the thickness direction z. The metal pin 333 is inserted into the through-hole 332. The through-hole 332 has a circular shape in a plan view. The inner diameter of the holder 331, in other words, the diameter r1 of the through-hole 332 (see Fig. 8) in a plan view is, for example, between 0.5 mm and 1.0 mm, inclusive. The through-hole 332 represents an example of the "first through-hole" in the present disclosure.

[0066] The metal pin 333 is a rod-shaped member extending in the thickness direction z. The metal pin 333 is press-inserted into the holder 331 so as to be supported thereby. The metal pin 333 is inserted in the thickness direction z from the upper side of the holder 331. The metal pin 333 is electrically connected to the conductive substrate 4 (front surface metal layer 42, which will be described later) via the holder 331. The metal pin 333 is, for example, a pin for a press-fit terminal. Although the metal pin 333 extends straight in the thickness direction z from the holder 331, in the semiconductor device A1, a part of the metal pin 333 may be bent or bent in the thickness direction z at an upper position of the holder 331.

[0067] The metal pin 333 includes a straight portion 333a. The straight portion 333a extends along the thickness direction z. The straight portion 333a corresponds to the portion of the metal pin 333 that is inserted into the through hole 332. At least a portion of the straight portion 333a is in contact with the inner surface of the holder 331.

[0068] For each of the control terminals 33, the size or length d1 of the straight section 333a in the thickness direction z (see Fig. 21) between 20% and 90%, inclusive, of the size or length of the holder 331 in the thickness direction z. For each of the control terminals 33, if the size of the holder 331 in the thickness direction z is, for example, 2.8 mm, the size d1 of the straight section 333a in the thickness direction z can be, for example, 2.0 mm. Here, the size d1 of the straight section 333a in the thickness direction z corresponds to the insertion depth of the metal pin 333 into the holder 331.

[0069] The conductive substrate 4 serves to support the plurality of control terminals 33. The conductive substrate 4 is arranged between the base substrate 2 and the plurality of control terminals 33. The conductive substrate 4 is formed, for example, from a DBC substrate. Alternatively, the conductive substrate 4 may be formed from a DBA substrate. Furthermore, the conductive substrate 4 may be formed from a printed circuit board instead of the DBC substrate.

[0070] The conductive substrate 4 includes, as shown in Fig. 7 and Fig. 14, a first conductive substrate 4A and a second conductive substrate 4B. The first conductive substrate 4A is arranged on the first conductor 24A of the base substrate 2. The first conductive substrate 4A supports the plurality of first control terminals 34 from the plurality of control terminals 33, in other words, the first drive terminal 34A and the plurality of first detection terminals 34B to 34D. The first conductive substrate 4A is, as shown in Fig. 15, Fig. 20 and Fig. 21, bonded to the first conductor 24A via the bonding material 49. The bonding material 49 is formed, for example, from a solder, which can be either conductive or insulating. The second conductive substrate 4B is arranged on the second conductor 24B of the base substrate 2. The second conductive substrate 4B supports the plurality of second control terminals 35 from the plurality of control terminals 33, in other words, the second drive terminal 35A and the plurality of second detection terminals 35B and 35C. The second conductive substrate 4B is, as shown in Fig. 18, bonded to the second conductor 24B via the bonding material 49.

[0071] The conductive substrate 4 (each of the first conductive substrate 4A and the second conductive substrate 4B) includes, as shown in Fig. 18 and Fig. 20, an insulating layer 41, a front surface metal layer 42, and a back surface metal layer 43. The insulating layer 41, the front surface metal layer 42, and the back surface metal layer 43 are formed in the same manner in both the first conductive substrate 4A and the second conductive substrate 4B unless otherwise specifically noted.

[0072] The insulating layer 41 is formed, for example, from a ceramic. Examples of the ceramic include AlN, SiN, and Al2O3. The insulating layer 41 has, in a plan view, a rectangular shape, for example. The insulating layer 41 includes a front surface 41a and a back surface 41b, as shown in Fig. 21. The front surface 41a and the back surface 41b are spaced apart from each other in the thickness direction z. The front surface 41a is oriented upward in the thickness direction z, and the back surface 41b is oriented downward in the thickness direction z. The front surface 41a and the back surface 41b are flat (or generally flat).

[0073] The front surface metal layer 42 is, as shown in Fig. 21, is formed on the front surface 41a of the insulating layer 41. The plurality of control terminals 33 are each projected upwardly from the front surface metal layer 42. The front surface metal layer 42 is composed of, for example, Cu or a Cu-based alloy. The material may be Al or an Al-based alloy instead of either Cu or the Cu-based alloy. The thickness of the front surface metal layer 42 (size along the thickness direction z) is, for example, between 200 µm and 500 µm, inclusive. As shown in Fig. 7, the front surface metal layer 42 includes a plurality of conductive sections 421 to 424.

[0074] The plurality of conductive sections 421 to 424 are spaced apart from each other and insulated from each other. The thickness direction of each of the conductive sections 421 to 424 is aligned with the thickness direction z. In both the first conductive substrate 4A and the second conductive substrate 4B, the shape of the plurality of conductive sections 421 to 424 in a plan view is not limited to the illustrated example, but can be modified as desired depending on the specification of the semiconductor device A1 (e.g., location of the semiconductor element 1, location of the first power terminal 31 and the second power terminal 32). The conductive sections 421 to 424 of the first conductive substrate 4A represent examples of the "first conductive section" in the present disclosure, and the conductive sections 421 to 424 of the second conductive substrate 4B represent examples of the "second conductive section."

[0075] The conductive section 421, to which a plurality of wires 651 are connected, is electrically connected to the respective first front surface electrodes 11 (gate) of the semiconductor elements 1 via the wires 651. As shown in Fig. 7, Fig. 18 and Fig. 20, the first drive terminal 34A is bonded to the conductive section 421 of the first conductive substrate 4A, and the second drive terminal 35A is bonded to the conductive section 421 of the second conductive substrate 4B.

[0076] The conductive section 422, to which a plurality of wires 652 are connected, is electrically connected to the respective second front surface electrode 12 (source) of the semiconductor elements 1 via the wires 652. As shown in Fig. 7, Fig. 18 and Fig. 20, the first detection terminal 34B is bonded to the conductive section 422 of the first conductive substrate 4A, and the second detection terminal 35B is bonded to the conductive section 422 of the second conductive substrate 4B.

[0077] A pair of conductive sections 423, each having a wire 653 connected thereto, are electrically connected to the respective third front surface electrodes 13 of the semiconductor elements 1 having the diode functional unit D1, via the respective wire 653. As shown in Fig. 7, Fig. 18 and Fig. 20, the first detection terminals 34C are respectively bonded to the conductive sections 423 of the first conductive substrate 4A, and the second detection terminals 35C are respectively bonded to the conductive sections 423 of the second conductive substrate 4B.

[0078] The conductive section 424 of the first conductive substrate 4A to which the wire 654 is connected, as shown in Fig. 7 is electrically connected to the first conductor 24A via the wire 654. To the conductive section 424 of the first conductive substrate 4A, the first detection terminal 34D is bonded, as shown in Fig. 7 and Fig. 20. None of the plurality of wires 641 to 645 are connected to the conductive section 424 of the second conductive substrate 4B. Similarly, none of the plurality of control terminals 33 are bonded to the conductive section 424 of the second conductive substrate 4B.

[0079] In each of the first conductive substrate 4A and the second conductive substrate 4B, the plurality of conductive sections 421 to 424 each include a terminal bonding surface 420a, an opening 420b, and a through-hole 420c. The terminal bonding surface 420a, the opening 420b, and the through-hole 420c are formed in the same manner in all of the conductive sections 421 to 424 of the first conductive substrate 4A and the second conductive substrate 4B.

[0080] The terminal bonding surface 420a is oriented upward in the thickness direction z. The respective holders 331 of the control terminals 33 are bonded to the terminal bonding surface 420a via the conductive bonding material 63, which will be described below. The terminal bonding surface 420a is flat (or generally flat).

[0081] The opening 420b is formed in the terminal bonding area 420a. As shown in Fig. 8, at least a part of the outer peripheral edge of the opening 420b is located on the inner side of the outer peripheral edge 331d of the holder 331, as viewed in a plan view. Here, the outer peripheral edge 331d of the holder 331 corresponds to the outer peripheral edge at the end portion of the holder 331 on the side of the terminal bonding surface 420a, as viewed in the thickness direction z. Accordingly, in the configuration in which the holder 331 includes the lower flange portion 331c, the outer peripheral edge 331d of the holder 331 in a plan view corresponds to the outer peripheral edge of the lower flange portion 331c in the plan view. In the semiconductor device A1 as shown in Fig. 8, the opening 420b is formed so that the outer peripheral edge in a plan view becomes concentric with the outer peripheral edge 331d of the holder 331 in the plan view. Furthermore, as is apparent from Fig. 8 and Fig. 21, the entire outer peripheral edge of the opening 420b overlaps with the lower flange portion 331c in a plan view. The diameter r2 of the opening 420b in a plan view (see Fig. 8) is, for example, between 0.8 mm and 1.6 mm, inclusive.

[0082] The through hole 420c is connected to the opening 420b and penetrates from the opening 420b a respective one of the conductive sections 421 to 424 in the thickness direction z. As shown in Fig. 21, the conductive bonding material 63 is formed in a part of the through-hole 420c, and the inner surface of the through-hole 420c is in contact with the conductive bonding material 63. In the Fig. In the example shown in FIG. 21, the inner surface of the through-hole 420c is formed in a tapered shape in the thickness direction z from the opening 420b side toward the insulating layer 41 side. However, the inner surface of the through-hole 420c does not need to be formed in the tapered shape. As a result of forming the through-hole 420c in each of the conductive sections 421 to 424, the insulating layer 41 includes an exposed portion 410 that overlaps with the through-hole 420c in plan view and that is not covered with the front surface metal layer 42, as shown in FIG. Fig. 21. The through-hole 420c represents an example of the “second through-hole” of the present disclosure.

[0083] The back surface metal layer 43 is, as shown in Fig. 21, is formed on the back surface 41b of the insulating layer 41. The back surface metal layer 43 of the first conductive substrate 4A is, as shown in Fig. 14, Fig. 20 and Fig. 21, bonded to the first conductor 24A via the bonding material 49. The back surface metal layer 43 of the second conductive substrate 4B is, as shown in Fig. 14 and Fig. 18, bonded to the second conductor 24B via the bonding material 49.

[0084] The conduction element 5, together with the base substrate 2, provides the path for a main circuit current to be switched by the plurality of semiconductor elements 1. The conduction element 5 is spaced apart from the base substrate 2 in the thickness direction z and overlaps with the base substrate 2 in a plan view. The conduction element 5 is formed from a plate-shaped member made of a metal. Examples of such a metal include Cu and a Cu-based alloy. The conduction element 5 is partially bent. The conduction element 5 includes a plurality of first conduction elements 51 and a second conduction element 52. The main circuit current includes a first main circuit current and a second main circuit current. The first main circuit current flows between the input terminal 31A and the output terminal 32A. The second main circuit current flows between the output terminal 32A and the input terminal 31B.

[0085] The plurality of first conduction elements 51 are bonded to the respective second front surface electrodes 12 (source) of the plurality of first semiconductor elements 1A and to the second conductor 24B to electrically connect the respective second front surface electrodes 12 of the plurality of first semiconductor elements 1A and the second conductor 24B. The first conduction elements 51 and the respective second front surface electrodes 12 of the plurality of first semiconductor elements 1A and the first conduction elements 51 and the second conductor 24B are bonded to each other via a conductive bonding material 591, as shown in Fig. 14. The conductive bonding material 591 may, for example, be a material selected from a solder, a metal paste, and a sintered metal. The first conductive elements 51 are, as shown in Fig. 7, each formed in a band-like or belt-like shape extending in the first direction x in plan view.

[0086] In the illustrated example, the number of first conduction elements 51 is three, corresponding to the number of first semiconductor elements 1A. Alternatively, for example, a single piece of the first conduction element 51 may be provided jointly for the plurality of first semiconductor elements 1A, regardless of their number.

[0087] The second conduction element 52 provides the conduction path between the respective second front surface electrode 12 (source) of the plurality of second semiconductor elements 1B and the input terminals 31B. The maximum size of the second conduction element 52 in the first direction x is, for example, between 25 mm and 40 mm, inclusive (preferably, 32 mm), and the maximum size in the second direction y is, for example, between 30 mm and 45 mm, inclusive (preferably, 38 mm). However, such sizes of the second conduction element 52 are not limited to the above example, but can be modified depending on the specification of the semiconductor device A1. The second conduction element 52 includes, as shown in Fig. 5 and Fig. 6, a pair of first wiring sections 521, a second wiring section 522, a third wiring section 523, and a plurality of fourth wiring sections 524.

[0088] One of the pair of first wiring sections 521 is connected to one of the pair of input terminals 31B, and the other of the pair of first wiring sections 521 is connected to the other of the pair of input terminals 31B. The first wiring section 521 and the corresponding input terminal 31B are bonded to each other by means of a conductive bonding material 592, as shown in Fig. 6 and Fig. 13. The conductive bonding material 592 may be, for example, a solder, a metal paste, or a sintered metal. As shown in Fig. 5 and Fig. As shown in Figure 6, the pair of first wiring sections 521 are each formed in a belt-like shape extending in the first direction x in a plan view. The pair of first wiring sections 521 are spaced apart from each other in the second direction y and are aligned parallel (or generally parallel) to each other.

[0089] The second wiring section 522 is, as shown in Fig. 5 and Fig. 6, is connected to both of the pair of first wiring sections 521. The second wiring section 522 is formed in a belt shape extending in the second direction y in a plan view. As is apparent from Fig. 5 and Fig. 6, the second wiring section 522 overlaps with the plurality of second semiconductor elements 1B in a plan view. As shown in Fig. 17, the second wiring section 522 is connected to each of the second semiconductor elements 1B. As shown in Fig. 6 and Fig. 17, the second wiring section 522 includes a plurality of recessed regions 522a. As shown in Fig. 17, the plurality of recessed regions 522a protrude downward in the thickness direction z with respect to the remaining portions of the second wiring section 522. As can be seen from Fig. As shown in Figure 17, the recessed regions 522a of the second wiring section 522 and the respective second front surface electrodes 12 of the plurality of second semiconductor elements 1B are bonded to each other via a conductive bonding material 593. The conductive bonding material 593 may be, for example, a solder, a metal paste, or a sintered metal.

[0090] The third wiring section 523 is, as shown in Fig. 5 and Fig. 6, connected to both of the pair of first wiring sections 521. The third wiring section 523 has a belt shape extending in the second direction y in a plan view. The third wiring section 523 is spaced apart from the second wiring section 522 in the first direction x. The third wiring section 523 is aligned in parallel (or generally parallel) with the second wiring section 522. The third wiring section 523 overlaps with the plurality of first semiconductor elements 1A in a plan view. As shown in Fig. 6 and Fig. 16, the third wiring section 523 includes a plurality of protruding regions 523a. The protruding regions 523a are, as shown in Fig. 16, respectively, in the thickness direction z with respect to the remaining portions of the third wiring section 523. The protruding regions 523a overlap in a plan view with the first semiconductor elements 1A, as shown in Fig. 6. Since the third wiring section 523 includes the plurality of protruding regions 523a, a region for bonding the first conductive element 51 is ensured on each of the first semiconductor elements 1A, as shown in Fig. 16. Such a configuration prevents the third wiring section 523 from contacting the first conductive element 51.

[0091] The plurality of fourth wiring sections 524 are, as shown in Fig. 5 and Fig. 6, connected to both of the second wiring section 522 and the third wiring section 523. The fourth wiring sections 524 each have a belt shape extending in the first direction x in a plan view. The plurality of fourth wiring sections 524 are spaced apart from each other in the second direction y and aligned parallel (or generally parallel) to each other in a plan view.In each of the plurality of fourth wiring sections 524, one end portion in the first direction x is connected to a portion of the third wiring section 523 overlapping with a region between two first semiconductor elements 1A adjacent to each other in the second direction y in a plan view, and the other end portion in the first direction x is connected to a portion of the second wiring section 522 overlapping with a region between two second semiconductor elements 1B adjacent to each other in the second direction y in a plan view.

[0092] As it is in Fig. 5 to Fig. As shown in Figure 7, the pair of first wiring sections 521 of the second conductive element 52 each includes an opening 53. Each of the openings 53 is a portion of the first wiring sections 521 that is partially cut out in a plan view. The opening 53 is arranged to overlap with the first conductor 24A, but not to overlap with the first semiconductor element 1A, as viewed in a plan view. The opening 53 is, as shown in Fig. 13, a through hole penetrating the first wiring sections 521 in the thickness direction z. Each of the openings 53 is arranged at a position overlapping with one of at least two corner portions of the first conductor 24A in a plan view, and, for example, at a position on the first wiring section 521 that is closer to the first power terminal 31 in the first direction x. The shape of the opening 53 in the plan view is not particularly limited. The opening 53 may be a hole as shown in Fig. 5 to Fig. 7, or instead a cut-out section.

[0093] The plurality of conductive bonding materials 61 each serve to bond the semiconductor element 1 to the base substrate 2. The plurality of conductive bonding materials 61 include a plurality of conductive bonding materials 61A and a plurality of conductive bonding materials 61B.

[0094] The variety of conductive bonding materials 61A are, as described in Fig. 14 to Fig. 16, are each arranged between the first conductor 24A and the first semiconductor element 1A. The plurality of conductive bonding materials 61A each serve to fix or adhere the first semiconductor element 1A to the first conductor 24A. The plurality of conductive bonding materials 61B are, as shown in Fig. 14 and Fig. 17, are each arranged between the second conductor 24B and the second semiconductor element 1B. The plurality of conductive bonding materials 61B each serve to fix or attach the first semiconductor element 1B to the second conductor 24B.

[0095] The plurality of conductive bonding materials 61 (plurality of conductive bonding materials 61A and 61B) each include, as shown in Fig. 15, a base layer 611, an upper layer 612, and a lower layer 613. In each of the conductive bonding materials 61 (conductive bonding materials 61A and 61B), the base layer 611, the upper layer 612, and the lower layer 613 are stacked or layered one on top of the other. The base layer 611, the upper layer 612, and the lower layer 613 are formed in the same manner in all of the conductive bonding materials 61 (conductive bonding materials 61A and 61B) unless specifically noted otherwise.

[0096] The base layer 611 is formed from a metal, which may be, for example, Al or an Al-based alloy. The base layer 611 may, for example, be formed from a sheet material.

[0097] The upper layer 612 is formed on the upper surface of the base layer 611, as shown in Fig. 15. In the conductive bonding material 61A, the upper layer 612 is arranged between the base layer 611 and the first semiconductor element 1A, as shown in Fig. 15. The upper layer 612 of the conductive bonding material 61A is bonded to the back surface electrode 15 of the first semiconductor element 1A, for example, by solid-phase diffusion of the metal. In the conductive bonding material 61B, the upper layer 612 is arranged between the base layer 611 and the second semiconductor element 1B. The upper layer 612 of the conductive bonding material 61B is bonded to the back surface electrode 15 of the second semiconductor element 1B, for example, by solid-phase diffusion of the metal. Accordingly, the respective upper layers 612 of the pair of conductive bonding materials 61A and 61B and the respective back surface electrodes 15 of the first semiconductor element 1A and the second semiconductor element 1B are bonded to each other in direct contact at the bonding interface.

[0098] The lower layer 613 is formed on the lower surface of the base layer 611, as shown in Fig. 15. In the conductive bonding material 61A, the lower layer 613 is arranged between the base layer 611 and the first conductor 24A, as shown in Fig. 15. The lower layer 613 of the conductive bonding material 61A is bonded to the front surface bonding layer 242 of the first conductor 24A, for example, by solid-phase diffusion of the metal. Similarly, in the conductive bonding material 61B, the lower layer 613 is disposed between the base layer 611 and the second conductor 24B. The lower layer 613 of the conductive bonding material 61B is bonded to the front surface bonding layer 242 of the second conductor 24B, for example, by solid-phase diffusion of the metal. Accordingly, the respective lower layers 613 of the pair of conductive bonding materials 61A and 61B and the respective front surface bonding layers 242 of the first conductor 24A and the second conductor 24B are bonded to each other in direct contact at the bonding interface.

[0099] The conductive bonding materials 61 (conductive bonding materials 61A and 61B) may each be formed of a solder, a metal paste, or a sintered metal, instead of being formed of the base layer 611, the upper layer 612, and the lower layer 613 as described above.

[0100] The plurality of conductive bonding materials 63 each serve to conductively bond the respective holders 331 of the control terminals 33 to the corresponding front surface metal layer 42 of the conductive substrates 4 (first conductive substrate 4A and second conductive substrate 4B). The plurality of conductive bonding materials 63 are constructed, for example, from solder. The plurality of conductive bonding materials 63 include a plurality of conductive bonding materials 63A and a plurality of conductive bonding materials 63B.

[0101] The conductive bonding materials 63A each serve, as shown in Fig. 20, one of the plurality of first control terminals 34 (first drive terminal 34A and plurality of first detection terminals 34B to 34D) is bonded to a corresponding one of the conductive sections 421 to 424 of the front surface metal layer 42 of the first conductive substrate 4A. In the semiconductor device A1, as shown in Fig. 20, by each of the conductive bonding materials 63A, the holder 331 of the first drive terminal 34A is bonded to the conductive section 421 of the front surface metal layer 42 of the first conductive substrate 4A, the holder 331 of the first sense terminal 34B is bonded to the conductive section 422 of the front surface metal layer 42 of the first conductive substrate 4A, the respective holders 331 of the pair of first sense terminals 34C are each bonded to the corresponding conductive section 423 of the front surface metal layer 42 of the first conductive substrate 4A, and the holder 331 of the first sense terminal 34D is bonded to the conductive section 424 of the front surface metal layer 42 of the first conductive substrate 4A.

[0102] The conductive bonding materials 63B each serve to bond one of the plurality of second control terminals 35 (second drive terminal 35A and plurality of second detection terminals 35B and 35C) to a corresponding one of the conductive sections 421 to 424 of the front surface metal layer 42 of the second conductive substrate 4B. In the semiconductor device A1, as shown in Fig. 18, by each of the conductive bonding materials 63B, the holder 331 of the second drive terminal 35A is bonded to the conductive section 421 of the front surface metal layer 42 of the second conductive substrate 4B, the second detecting terminal 35B is bonded to the conductive section 422 of the front surface metal layer 42 of the second conductive substrate 4B, and the pair of second detecting terminals 35C are bonded to the corresponding conductive section 423 of the front surface metal layer 42 of the second conductive substrate 4B.

[0103] As it is in Fig. As shown in FIG. 15, at least a portion of each of the plurality of conductive bonding materials 63 is disposed between the holder 331 (lower flange portion 331c) of the control terminal 33 and the front surface metal layer 42 (one of the conductive sections 421 to 424) of the conductive substrate 4 (first conductive substrate 4A or second conductive substrate 4B) as viewed in the thickness direction z. The thickness of such an interposed portion (size in the thickness direction z) is, for example, between 20 μm and 70 μm, inclusive. The thickness in this range enables ensuring appropriate bonding strength while preventing the thickness from becoming excessive. As shown in FIG. Fig. 15, the outer peripheral edge of each of the plurality of conductive bonding materials 63 is arranged on the outside of the outer peripheral edge 331d of the corresponding holder 331 of the control terminal 33, as viewed in a plan view.

[0104] In the Fig. 21, the plurality of conductive bonding materials 63 (plurality of conductive bonding materials 63A and plurality of conductive bonding materials 63B) each include an inflow portion 631 and a filling portion 632. The inflow portion 631 corresponds to a portion of the conductive bonding material 63 formed inside the through-hole 332 of the holder 331. For example, the upper surface of the inflow portion 631, as shown in Fig. 21, the inflow portion 631 is formed in an arc shape, concave downward in the thickness direction z when viewed in a direction orthogonal to the thickness direction z (for example, in the first direction x). Alternatively, the upper surface of the inflow portion 631 may be flat. The shape of the upper surface of the inflow portion 631 may become arcuately curved or flat depending on the type of surface treatment of the holder 331 and the type of the conductive bonding material 63 (solder). A ratio of a size h1 of the inflow portion 631 in the thickness direction z to the inner diameter of the holder 331 (diameter r1 of the through-hole 332) (h1 / r1×100) is, for example, between 10% and 65%, inclusive. Furthermore, the size h1 of the inflow section 631 in the thickness direction z is, for example, between 100 µm and 500 µm, inclusive.The filling portion 632 corresponds to a portion of the conductive bonding material 63 formed inside the through-hole 420c. The lower surface of the filling portion 632 is curved in an arc shape. Here, the conductive bonding material 63 shown in FIG. Fig. 21, represents the case in which the diameter r2 of the opening 420b in a plan view is, for example, 0.8 mm.

[0105] In the semiconductor device A1, since the conductive bonding material 63 is solder and the respective insulating layers 41 of the first conductive substrate 4A and the second conductive substrate 4B are formed of a ceramic, the insulating layers 41 have a low affinity (low wettability) with the conductive bonding material 63. Accordingly, as shown in Fig. 21, a void 630 is formed between the conductive bonding material 63 and the insulating layer 41. This is because it is difficult for the conductive bonding material 63 to make contact with the insulating layer 41 due to the low affinity of the insulating layer 41 with the conductive bonding material 63, and consequently, the void 630 remains after the conductive bonding material 63 has cured. Due to the presence of the void 630, at least a part of the exposed portion 410 of the insulating layer 41 is not in contact with the conductive bonding material 63, as shown in Fig. 21 is shown.

[0106] Furthermore, since the conductive bonding material 63 is solder and since the respective front surface metal layers 42 of the first conductive substrate 4A and the second conductive substrate 4B are made of Cu or a Cu-based alloy, in the semiconductor device A1, the front surface metal layer 42 has a high affinity (high wettability) with the conductive bonding material 63. Accordingly, as shown in Fig. 21, the conductive bonding material 63 makes contact with the inner surface of the through-hole 420c.

[0107] In the semiconductor device A1, since the conductive bonding material 63 is solder and since the respective holders 331 of the plurality of control terminals 33 are also formed of Cu or a Cu-based alloy, the holders 331 have a high affinity (high wettability) with the conductive bonding material 63. Accordingly, the conductive bonding material 63 flows as shown in Fig. 21, into the through-hole 332 of the holder 331 to thereby form the inflow portion 631. However, there may be cases where the inflow portion 631 is not formed, depending on the amount of the conductive bonding material 63 and the volume of the through-hole 420c.

[0108] The plurality of wires 651 to 654 each provide an electrical connection between two components that are spaced apart from each other. The plurality of wires 651 to 654 are, for example, bond wires. The material of the plurality of wires 651 to 654 includes, for example, a material selected from gold (Au), Al, and Cu.

[0109] The plurality of wires 651 include a plurality of first wires 651A and a plurality of second wires 651B. As shown in Fig. 7, the plurality of first wires 651A are each bonded to one of the respective first front surface electrodes 11 (gate) of the first semiconductor elements 1A and to the conductive section 421 of the front surface metal layer 42 of the first conductive substrate 4A to provide electrical connection therebetween. As shown in Fig. 7, the plurality of second wires 651B are each bonded to one of the respective first front surface electrodes 11 (gate) of the second semiconductor elements 1B and to the conductive section 421 of the second conductive substrate 4B to provide electrical connection therebetween.

[0110] The plurality of wires 652 include a plurality of first wires 652A and a plurality of second wires 652B. As shown in Fig. 7, the plurality of first wires 652A are each bonded to one of the respective second front surface electrodes 12 (source) of the first semiconductor elements 1A and to the conductive section 422 of the front surface metal layer 42 of the first conductive substrate 4A to provide electrical connection therebetween. As shown in Fig. As shown in Fig. 7, the plurality of second wires 652B are each bonded to one of the respective second front surface electrodes 12 (source) of the second semiconductor elements 1B, and to the conductive section 422 of the front surface metal layer 42 of the second conductive substrate 4B to provide electrical connection therebetween. In the case where the semiconductor elements 1 each include an additional electrode serving as a source detection device, the first wire 652A and the second wire 652B are bonded to the additional electrode serving as the source detection device, instead of the second front surface electrode 12 (source).

[0111] The plurality of wires 653 include a pair of first wires 653A and a pair of second wires 653B. As shown in Fig. 7, the pair of first wires 653A are each bonded to one of the third front surface electrodes 13 of the first semiconductor element 1A having the diode functional unit D1 and to one of the conductive sections 423 of the front surface metal layer 42 of the first conductive substrate 4A to provide electrical connection therebetween. As shown in Fig. 7, the pair of second wires 653B are each bonded to one of the third front surface electrodes 13 of the second semiconductor element 1B having the diode functional unit D1 and one of the conductive sections 423 of the front surface metal layer 42 of the second conductive substrate 4B to provide electrical connection therebetween.

[0112] The wire 654 is, as it is in Fig. 7, bonded to the first conductor 24A and to the conductive section 424 of the first conductive substrate 4A to provide electrical connection therebetween.

[0113] The resin member 7 covers the plurality of semiconductor elements 1, a part of the base substrate 2, a part of each of the first power terminal 31 and the second power terminal 32, the conductive substrate 4 (first conductive substrate 4A and second conductive substrate 4B), the conductive member 5 (first conductive member 51 and second conductive member 52), the plurality of conductive bonding materials 61 and 63, and the plurality of wires 651 to 654. The resin member 7 is formed, for example, from an insulating resin material such as an epoxy resin. The resin member 7 is formed, for example, by molding. The size of the resin element 7 is, for example, between 35 mm and 60 mm, inclusive, in the first direction x, between 35 mm and 50 mm, inclusive, in the second direction y, and between 4 mm and 15 mm, inclusive, in the thickness direction z.The dimensions mentioned represent the size of the largest section in the corresponding direction. The dimensions of the resin element 7 are not limited to the above example, but can be modified as desired depending on the specifications of the semiconductor device A1. The resin element 7 includes a resin front surface 71, a resin back surface 72, and a plurality of resin side surfaces 731 to 734.

[0114] The resin front surface 71 and the resin back surface 72 are, as shown in Fig. 9, Fig. 11 and Fig. 12, spaced apart from each other in the thickness direction z. The resin front surface 71 is oriented upward in the thickness direction z, and the resin back surface 72 is oriented downward in the thickness direction z. The plurality of control terminals 33 (first drive terminal 34A, plurality of first detection terminals 34B to 34D, second drive terminal 35A, and plurality of second detection terminals 35B and 35C) protrude from the resin front surface 71. The resin back surface 72 is, as shown in Fig. 10, formed in a frame shape surrounding the lower surface (surface oriented downward in the thickness direction z) of the front surface metal layer 42 of the conductive substrate 4 and the back surface metal layer 23 of the base substrate 2 in a plan view. Opposite the resin back surface 72, the lower surface of the front surface metal layer 42 and the back surface metal layer 23 is exposed. For example, the resin back surface 72 is formed flush with the lower surface of the front surface metal layer 42 and the back surface metal layer 23, respectively. The plurality of resin side surfaces 731 to 734 are respectively connected to both the resin front surface 71 and the resin back surface 72 and are arranged therebetween in the thickness direction z. As shown in Fig. 4, Fig. 9 and Fig. As shown in Figure 10, the resin side surface 731 and the resin side surface 732 are spaced apart from each other in the first direction x. The resin side surface 732 is oriented toward one side in the first direction x, and the resin side surface 731 is oriented toward the other side in the first direction x. Two output terminals 32A (second power terminal 32) protrude from the resin side surface 731, and three input terminals 31A and 31B (first power terminal 31) protrude from the resin side surface 732. As shown in Fig. 4 and in Fig. 10 to Fig. As shown in Figure 12, the resin side surface 733 and the resin side surface 734 are spaced apart from each other in the second direction y. The resin side surface 734 is oriented toward one side in the second direction y, and the resin side surface 733 is oriented toward the other side in the second direction y.

[0115] The resin side surface 732 includes, as shown in Fig. 4 and Fig. 10, a plurality of recesses 732a. The recesses 732a are each recessed in the first direction x in a plan view. The plurality of recesses 732a include one formed between the input terminal 31A and one of the pair of input terminals 31B in a plan view, and another formed between the input terminal 31A and the other of the pair of input terminals 31B in a plan view. The plurality of recesses 732a are provided to increase the creepage distance along the resin side surface 732 between the input terminal 31A and one of the pair of input terminals 31B, and to increase the creepage distance along the resin side surface 732 between the input terminal 31A and the other of the pair of input terminals 31B.

[0116] The resin element 7 also includes, as shown in Fig. 13 and Fig. 14, a plurality of first protruding portions 751, a plurality of second protruding portions 752, and a resin cavity 76.

[0117] The plurality of first preceding sections 751 are each, as it is in Fig. 13, in the thickness direction z relative to the resin front surface 71. The plurality of first protruding portions 751 are each arranged close to one of four corners of the resin member 7, as seen in a plan view. As shown in Fig. As shown in Fig. 13, a first protruding end surface 751a is formed at the distal end portion (upper end portion in the thickness direction z) of each of the first protruding portions 751. The respective first protruding end surfaces 751a of the plurality of first protruding portions 751 are aligned parallel (or generally parallel) to the resin front surface 71 and are arranged on the same plane (xy plane). The first protruding portions 751 are each formed in a bottomed and hollow truncated cone shape, for example. The plurality of first protruding portions 751 each serve as a spacer in a device that uses the power generated by the semiconductor device A1 when the semiconductor device A1 is mounted on a control circuit board of the device, for example.It is sufficient if the first protruding portion 751 is formed in a columnar shape, preferably in a circular columnar shape.

[0118] The plurality of second protruding sections 752 are each, as shown in Fig. 14, protrudes in the thickness direction z from the resin front surface 71. In a plan view, the plurality of second protruding portions 752 are respectively formed overlapping with the plurality of control terminals 33. The metal pin 333 of each of the plurality of control terminals 33 protrudes from the second protruding portion 752. A part of the holder 331 (upper surface of the upper flange portion 331b) is exposed from the upper end surface of each of the second protruding portions 752. The second protruding portions 752 are each formed in a truncated cone shape. A resin portion 77 is disposed on each of the second protruding portions 752.

[0119] As it is in Fig. As shown in Fig. 14, the resin portion 77 is disposed on the second protruding portion 752 of the resin member 7. At each of the control terminals 33, the resin portion 77 covers a part of the holder 331 exposed from the resin member 7 (upper surface of the upper flange portion 331b) and a part of the metal pin 333. While the resin portion 77 is formed of an insulating resin material (e.g., epoxy resin), for example, like the resin member 7, the resin portion 77 may be formed of a different material than the resin member 7. The resin portion 77 is formed, for example, by a resin potting method after the metal pin 333 is inserted into the holder 331.

[0120] The resin cavity 76 is, as shown in Fig. 13, is formed to establish a connection between the resin front surface 71 and the recess 240a in the thickness direction z. The resin cavity 76 is formed in a conical shape such that a cross-sectional area gradually decreases from the resin front surface 71 toward the recess 240a, as viewed in the thickness direction z.

[0121] The resin filling 78 is loaded into the resin cavity 76 to fill the resin cavity 76. While the resin filling 78 is formed of an insulating resin material (e.g., epoxy resin), for example, like the resin member 7, the resin filling 78 may be formed of a different material than the resin member 7. The resin filling 78 is formed, for example, by a resin molding process. The lower end surface of the resin filling 78 in the thickness direction z is in contact with the recess 240a of the first conductor 24A or the second conductor 24B.

[0122] The operation and beneficial effects of the semiconductor device A1 are described below.

[0123] The semiconductor device A1 is equipped with the junction structure, which includes the conductive substrate 4 (first conductive substrate 4A or second conductive substrate 4B), the control terminals 33, and the conductive bonding material 63. The conductive substrate 4 (first conductive substrate 4A or second conductive substrate 4B) includes the conductive sections 421 to 424. The control terminals 33 each include the holder 331 and the metal pin 333. The conductive bonding materials 63 serve to bond the conductive sections 421 to 424 and the control terminal 33 to each other. The holder 331 includes a through hole 332. The through hole 332 is formed to penetrate the holder 331 in the thickness direction z, and a part of the metal pin 333 (straight portion 333a) is inserted into the through hole 332.The conductive sections 421 to 424 each include the terminal bonding surface 420a to which the retainer 331 is bonded, and the opening 420b formed in the terminal bonding surface 420a. In an interconnection structure in which, unlike the one described above, the conductive sections 421 to 424 are formed without the opening 420b, the conductive bonding material 63 flows into the through-hole 332 when the retainer 331 is bonded to the respective conductive sections 421 to 424, and thus, a sufficient terminal insertion depth may not be achieved. In contrast, in the interconnection structure of the semiconductor device A1, the opening 420b serves to suppress the conductive bonding material 63 from flowing into the through-hole 332. Accordingly, the insertion depth of the metal pin 333 into the holder 331 can be properly ensured.Consequently, the connection structure of the semiconductor device A1 allows the metal pin 333 to be properly inserted into the holder 331, thereby preventing the metal pin 333 from detaching from the holder 331. For example, when the size d1 of the straight portion 333a of the metal pin 333 in the thickness direction z (see . Fig. 21) is between 20% and 90% (preferably between 60% and 85%), both inclusive, of the size of the holder 331 in the thickness direction z, it can be assumed that the metal pin 333 is properly inserted into the holder 331.

[0124] The inventors of the present disclosure investigated the amount of upward penetration of the conductive bonding material 63 into the through-hole 332 under the condition where the diameter r2 of the opening 420b was 0.8 mm and the inner diameter of the holder 331 (diameter r1 of the through-hole 332) was 0.74 mm. The amount of upward penetration corresponds to the size h1 of the inflow portion 631 formed in the through-hole 332 in the thickness direction z (see Fig. 21). While the amount of upward penetration of the conductive bonding material 63 into the structure without the opening 420b was 500 µm or more, the amount of upward penetration into the structure with the opening 420b was 450 µm or less. It was therefore demonstrated that the presence of the opening 420b suppressed the amount of upward penetration of the conductive bonding material 63 into the holder 331 (through hole 332).

[0125] In the connection structure of the semiconductor device A1, the outer peripheral edge of the opening 420b is at least partially located on an inner side of the outer peripheral edge 331d of the holder 331, as viewed in a plan view. As described above, the outer peripheral edge 331d corresponds to the outer peripheral edge of the lower end portion of the holder 331 in the thickness direction z. In this case, at least a part of the lower end portion of the holder 331 in the thickness direction z is opposed to the terminal bonding surface 420a, and thus, entry of the lower end portion into the opening 420b is restricted. If the lower end portion of the holder 331 were to enter the opening 420b in the thickness direction z, the amount of penetration of the conductive bonding material 63 upward into the through hole 332 would increase, which would prevent the insertion depth of the metal pin 333 into the holder 331 from being properly secured.Accordingly, the connection structure of the semiconductor device A1 prevents the lower end portion of the holder 331 in the thickness direction z from entering the opening 420b, thereby suppressing the conductive bonding material 63 from penetrating upward into the through-hole 332, and enabling the insertion depth of the metal pin 333 into the holder 331 to be properly secured.

[0126] In the connection structure of the semiconductor device A1, the holder 331 includes the tubular portion 331a and the lower flange portion 331c. For example, the outer peripheral edge of the lower flange portion 331c is entirely located outside the outer peripheral edge of the tubular portion 331a in a plan view. Such a configuration increases the volume of the through-hole 420c connected to the opening 420b, while still preventing the lower end portion of the holder 331 in the thickness direction z from entering the opening 420b. In other words, the conductive bonding material 63 can be effectively suppressed from penetrating upward into the through-hole 332.

[0127] In the interconnection structure of the semiconductor device A1, the conductive bonding materials 63 each include the inflow portion 631 formed in the through-hole 332 of the holder 331. Accordingly, the conductive bonding material 63 serves to enhance the bonding strength between the holder 331 and each of the conductive sections 421 to 424 by virtue of the presence of the inflow portion 631. Specifically, in the interconnection structure of the semiconductor device A1, the ratio of the size h1 of the inflow portion 631 in the thickness direction z to the diameter r1 of the through-hole 332 (h1 / r1×100) is between 10% and 65%, inclusive. At such a ratio which is 10% or higher, the bonding strength can be increased, and at the ratio which is 65% or lower, a sufficient insertion depth of the metal pin 333 into the holder 331 can be ensured.

[0128] In the connection structure of the semiconductor device A1, the outer peripheral edge of the conductive bonding material 63 is disposed on the outside of the outer peripheral edge 331d of the holder 331 of the control terminal 33, as viewed in a plan view. Accordingly, the conductive bonding material 63 is disposed in the thickness direction z between the lower flange portion 331c of the holder 331 and the terminal bonding surface 420a of each of the conductive sections 421 to 424. Consequently, the holder 331 of the control terminal 33 can be suitably bonded to each of the conductive sections 421 to 424.

[0129] In the semiconductor device A1, the plurality of control terminals 33 are each connected to a control circuit board on which the semiconductor device A1 is mounted. In this case, the control circuit board may be arranged on the upper side of the semiconductor device A1, as viewed in the thickness direction z. In addition, the first power terminals 31 (plurality of input terminals 31A and 31B) and the second power terminals 32 (two output terminals 32A) are connected to a power circuit board on which the semiconductor device A1 is mounted. In this case, the power circuit board may be arranged adjacent to the semiconductor device A1 in the first direction x.With such a configuration, the power circuit board to which the first power terminals 31 and the second power terminals 32 are connected, and the control circuit board to which the control terminals 33 (metal pins 333) are connected can be arranged separated or spaced from each other in the thickness direction z. Consequently, first, the degree of freedom in arranging the location of signal terminals in the semiconductor device A1 can be increased. Second, the degree of freedom in designing the routing and the length of the signal wiring in the semiconductor device A1 can be increased. Third, the degree of freedom for the user in arranging the circuit board when the semiconductor device A1 is put into use can be increased.

[0130] With reference now to Fig. 23 to Fig. 30, variations of the interconnect structure according to the present disclosure are described below.

[0131] Fig. 23 illustrates an example in which, in the connection structure between each of the conductive sections 421 to 424 and the control terminal 33, the diameter r2 of the opening 420b is increased compared to the diameter r2 of the opening 420b of the previously described semiconductor device A1. Fig. 23 is an enlarged partial sectional view corresponding to Fig. 21. Fig. Figure 23 illustrates the example of the conductive bonding material 63 in a configuration in which the diameter r2 of the opening 420b in a plan view is, for example, 1.6 mm. Fig. In the example shown in Figure 23, the conductive bonding material 63 is present without the inflow portion 631, and the void 630 communicates with the through-hole 332. This is because the increase in the diameter r2 of the opening 420b has resulted in an increase in the volume of the through-hole 420c.

[0132] Fig. 24 illustrates an example in which, in the connection structure between each of the conductive sections 421 to 424 and the control terminal 33, a recess 420d is formed in each of the conductive sections 421 to 424 instead of the through hole 420c. Fig. 24 is an enlarged partial sectional view corresponding to Fig. 21. As it is in Fig. As shown in Fig. 24, the recess 420d is connected to the opening 420b like the through-hole 420c. The depth of the recess 420d is, for example, between 50 μm and 200 μm, inclusive. The depth of the recess 420d refers to the size in the thickness direction z between the terminal bonding surface 420a and the bottom of the recess 420d. For example, when the size of the conductive sections 421 to 424 in the thickness direction z (thickness of the front surface metal layer 42) is large, the recess 420d can be formed instead of the through-hole 420c. This is because the recess 420d still allows sufficient volume to be ensured. When the thickness of the front surface metal layer 42 (size of the conductive sections 421 to 424 in the thickness direction z) is, for example, 200 µm or more, the recess 420d can be formed. Fig. 24, the conductive bonding material 63 is prevented from contacting the insulating layer 41, and therefore the recess 420d is completely filled with the filling portion 632. In other words, in the connection structure shown in Fig. 24, the empty space 630 is not formed.

[0133] Fig. 25 to Fig. 30 each illustrates an example in which, in the connection structure between each of the conductive sections 421 to 424 and the control terminal 33, the opening 420b is formed in a different shape in a plan view. Fig. 25 to Fig. 30 are enlarged partial top views corresponding Fig. 8. In Fig. 25 to Fig. However, in Fig. 30, the holder 331 of the control terminal 33 is shown by imaginary lines, and the metal pin 333 of the control terminal 33 and the conductive bonding material 63 are omitted.

[0134] In the Fig. 25, the opening 420b of each of the conductive sections 421 to 424 overlaps with the through-hole 332 in a plan view. In other words, in the connection structure shown in Fig. 25, the diameter r2 of the opening 420b is smaller in a plan view, compared with the connection structure of the previously described semiconductor device A1.

[0135] In the Fig. In the example shown in Fig. 26, the opening 420b of each of the conductive sections 421 to 424 is formed in an elliptical shape in a plan view, and a part of the outer peripheral edge of the opening 420b is located on the outside of the outer peripheral edge 331d of the holder 331, as viewed in a plan view. In the example shown in Fig. 26, although the major axis of the opening 420b extends along the first direction x in a plan view, the major axis may instead extend along any direction orthogonal to the thickness direction z.

[0136] In the Fig. 27, the opening 420b of each of the conductive sections 421 to 424 is formed in a rectangular shape in a plan view.

[0137] In the Fig. 28, the opening 420b of each of the conductive sections 421 to 424 is formed in a rectangular shape in a plan view, as in the example shown in Fig. 27. In contrast to the example shown in Fig. However, in the example shown in Fig. 27, a part of the outer peripheral edge of the opening 420b is arranged on the outside of the outer peripheral edge 331d of the holder 331 in a plan view. In the example shown in Fig. In the example shown in Figure 28, the long sides of the opening 420b extend in the first direction x, as viewed in a plan view. Alternatively, the long sides may extend along any direction orthogonal to the thickness direction z.

[0138] In the Fig. 29, the conductive sections 421 to 424 each include a plurality of openings 420b, each formed in a linear shape in a plan view. In each of the conductive sections 421 to 424, the plurality of openings 420b each extend in the second direction y and are parallel to each other. Although the plurality of openings 420b in the Fig. 29, the openings 420b may extend in any direction orthogonal to the thickness direction z.

[0139] In the Fig. In the example shown in Figure 30, the opening 420b of each of the conductive sections 421 to 424 is formed into a lattice shape in a plan view, with two lines extending in the first direction x and two lines extending in the second direction y so as to intersect the first two lines. In contrast to the example shown in Fig. In the example shown in Figure 30, the number of lines extending in the first direction x and the number of lines extending in the second direction y may each be three or more. Furthermore, it is not necessary for the lines extending in the first direction x and the lines extending in the second direction y to be orthogonal to each other in a plan view, as shown in Fig. 30. It is sufficient if the lines intersect each other.

[0140] For all the connecting structures that are Fig. 23 to Fig. 30, a part of the outer peripheral edge of the opening 420b is also located on the inner side of the outer peripheral edge 331d of the holder 331, as viewed in plan view, as in the connection structure between each of the conductive sections 421 to 424 and the control terminal 33 in the semiconductor device A1 according to the embodiment. Therefore, the conductive bonding material 63 is suppressed from penetrating upward into the through-hole 332, and an adequate insertion depth of the metal pin 331 into the holder 331 can be ensured.

[0141] Although the plurality of control terminals 33 in the semiconductor device A1 each include the holder 331 and the metal pin 333, the first power terminal 31 and / or the second power terminal 32 may be configured in the same manner as the control terminal 33. For example, in the semiconductor device A1, the second power terminal 32 (output terminal 32A) may include a holder and a metal pin similar to the holder 331 and the metal pin 333 of the control terminal 33. Fig. 31 shows a semiconductor device according to such a variation. In the Fig. In the example shown in Fig. 31, the holder of each of the output terminals 32A is bonded, for example, to the second conductor 24B. In this case, a through-hole or a recess, similar to the through-hole 420c or the recess 420d, may be formed at a position on the second conductor 24B where the holder of the output terminal 32A is to be bonded. Since the main circuit current flows through the first power terminal 31 and the second power terminal 32, it is preferable to make the metal pin of the second power terminal 32 thicker than the metal pin 333 of the plurality of control terminals 33, as shown in Fig. Fig. 31. As described above, the connection structure according to the present disclosure is also applicable to the power terminal, without limitation to the signal terminal.

[0142] Although the above embodiment illustrates the case where the interconnection structure according to the present disclosure is applied to the semiconductor device including the switching element, the interconnection structure according to the present disclosure may also be applied to a semiconductor device including a semiconductor element other than the switching element (for example, a diode), or to an electronic device including an electronic component other than the semiconductor element, such as a resistor, an inductor, a transformer, a capacitor, or an IC.

[0143] The interconnection structure and semiconductor device according to the present disclosure are not limited to the above embodiment and variations thereof. The precise configuration of each element of the interconnection structure and semiconductor device according to the present disclosure can be modified in various ways. For example, the present disclosure includes embodiments defined in the clauses below. Clause 1.

[0144] Connection structure with: a conductive substrate including a conductive section; a terminal including an electrically conductive tubular holder and a metal pin inserted into the holder; and a conductive bonding material that bonds the conductive section and the holder together, wherein the metal pin has a straight portion extending along a thickness direction of the conductive section, wherein the holder has a first through-hole extending in the thickness direction and into which the straight portion of the metal pin is inserted, wherein the conductive section has a terminal bonding surface to which the holder is bonded and has an opening formed in the terminal bonding surface, and wherein at least a part of an outer peripheral edge of the opening is located on an inner side of an outer peripheral edge of the holder when viewed in the thickness direction. Clause 2.

[0145] Connection structure according to clause 1, wherein the holder includes a tubular portion and an upper flange portion and a lower flange portion arranged in the thickness direction on respective sides of the tubular portion, wherein the first through-hole penetrates the tubular portion, the upper flange portion and the lower flange portion in the thickness direction, and where the lower flange section is bonded to the conductive section. Clause 3.

[0146] Connection structure according to clause 2, wherein the outer peripheral edge of the holder corresponds to an outer peripheral edge of the lower flange portion when viewed in the thickness direction. Clause 4.

[0147] Connection structure according to clause 3, wherein the entire outer peripheral edge of the opening overlaps with the lower flange portion when viewed in the thickness direction. Clause 5.

[0148] Connection structure according to any of clauses 2 to 4, wherein the tubular portion and the first through-hole each have a circular shape when viewed in the thickness direction. Clause 6.

[0149] The interconnection structure according to clause 5, wherein the conductive bonding material has an inflow portion formed in the first through-hole, and wherein the inflow portion extends in the thickness direction from an end of the holder located on the conductive section side. Clause 7.

[0150] Connection structure according to clause 6, wherein a ratio of a size of the inflow portion in the thickness direction to a diameter of the first through hole is between 10% and 65%, inclusive.

[0151] Clause 8. Connection structure according to any of Clauses 1 to 7, wherein an outer peripheral edge of the conductive bonding material is arranged on an outer side of the outer peripheral edge of the holder when viewed in the thickness direction. Clause 9.

[0152] Connection structure according to any of clauses 1 to 8, wherein the conductive section has a second through-hole connected to the opening, and wherein the conductive bonding material is in contact with an inner surface of the second through-hole. Clause 10.

[0153] Connection structure according to clause 9, wherein the conductive substrate has an insulating layer, wherein the conductive section is stacked or layered on one side of the insulating layer in the thickness direction, wherein the insulating layer has an exposed portion overlapping with the second through-hole when viewed in the thickness direction, and wherein at least a portion of the exposed portion is not in contact with the conductive bonding material. Clause 11.

[0154] Connection structure according to any of clauses 1 to 8, wherein the conductive section has a recess connected to the opening. Clause 12.

[0155] Connection structure according to Clause 11, wherein the conductive bonding material has a filling portion formed in the recess. Clause 13.

[0156] Semiconductor component with: a connection structure according to any of clauses 1 to 12; and a semiconductor element that is electrically connected to the terminal. Clause 14.

[0157] Semiconductor component according to Clause 13, wherein the terminal includes a control terminal that controls the semiconductor element. Clause 15.

[0158] Semiconductor component according to Clause 14, further comprising a first power terminal and a second power terminal, each electrically connected to the semiconductor element, wherein a first source voltage is input to the first power terminal, and wherein a second source voltage is input to the second power terminal. Clause 16.

[0159] A semiconductor device according to clause 15, further comprising a first conductor and a second conductor spaced apart from each other in a first direction oriented orthogonal to the thickness direction, wherein the semiconductor element comprises a first semiconductor element bonded to the first conductor and a second semiconductor element bonded to the second conductor, wherein the conductive substrate comprises a first conductive substrate bonded to the first conductor and a second conductive substrate bonded to the second conductor, wherein the conductive section comprises a first conductive section bonded to the first conductive substrate and a second conductive section bonded to the second conductive substrate, wherein the first power terminal has a first input terminal connected to the first conductor and a second input terminal connected to the second semiconductor element, wherein the second power terminal is an output terminal connected to the second conductor, and wherein the control terminal comprises a first control terminal bonded to the first conductive section and configured to control the first semiconductor element, and a second control terminal bonded to the second conductive section and configured to control the second semiconductor element. Clause 17.

[0160] Semiconductor component according to Clause 16, wherein each of the first semiconductor element and the second semiconductor element is a switching element that performs a switching action, wherein the first control terminal includes a first drive terminal that controls the switching action of the first semiconductor element and a first detection terminal that detects a conduction status of the first semiconductor element, and wherein the second control terminal has a second drive terminal that controls the switching action of the second semiconductor element and a second detection terminal that detects a conduction status of the second semiconductor element. Clause 18.

[0161] A semiconductor device according to clause 17, further comprising a resin member covering a part of each of the first control terminal and the second control terminal, the first conductive substrate and the second conductive substrate, and the first semiconductor element and the second semiconductor element, wherein the first control terminal and the second control terminal each protrude from the resin member in the thickness direction. Clause 19.

[0162] Semiconductor component according to Clause 18, wherein the resin member has a resin front surface and a resin back surface spaced apart from each other in the thickness direction, and a resin side surface disposed between the resin front surface and the resin back surface in the thickness direction, wherein the resin side surface is oriented towards the first direction and wherein the first power terminal and the second power terminal each protrude from the resin side surface in the first direction. REFERENCE SYMBOL

[0163] A1 Semiconductor component 1 Semiconductor element 1A First semiconductor element 1B Second semiconductor element 10a Element front surface 10b Element back surface 11 First front surface electrode 12 Second front surface electrode 13 Third front surface electrode 15 Back surface electrode Q1 Switching action unit D1 Diode functional unit D2 Diode 2 Base substrate 21 Insulating layer 21a Front surface 21b Back surface 22 Front surface metal layer 22A First bearing portion 22B Second bearing portion 221 Bonding layer 23 Back surface metal layer 24A First conductor 24B Second conductor 240a Recess 241 Base material 242 Front surface bonding layer 243 Back surface bonding layer 25A,25B Conductive bonding material 251: Base layer 252: Upper layer 253: Lower layer 31: First power terminal 31A: Input terminal 31B: Input terminal 32: Second power terminal 32A: Output terminal 33: Control terminal 331: Holder 331a: Tubular portion 331b: Upper flange portion 331c: Lower flange portion 331d: Outer peripheral edge 332: Through hole 333: Metal pin 333a: Straight portion 34: First control terminal 34A: First drive terminal 34B, 34C, 34D: First detection terminal 35: Second control terminal 35A: Second drive terminal 35B, 35C: Second detection terminal 4: Conductive substrate 4A: First conductive substrate 4B: second conductive substrate 41: insulating layer 41a: front surface 41b: back surface 410: exposed portion 42: front surface metal layer 420a: terminal bonding surface 420b: opening 420c: through hole 420d: recess 421, 422, 423,424: conductive section 43: back surface metal layer 49: bonding material 5: conductive element 51: first conductive element 52: second conductive element 521: first wiring section 522: second wiring section 522a: recessed region 523: third wiring section 523a: protruding region 524: fourth wiring section 53: opening 591, 592, 593: conductive bonding material 61, 61A, 61B: conductive bonding material 611: base layer 612: upper layer 613: lower layer 63, 63A,63B: conductive bonding material 630: empty space 631: inflow portion 32: filling portion 651: wire 651A: first wire 651B: second wire 652: wire 652A: first wire 652B: second wire 653: wire 653A: first wire 653B: second wire 654: wire 654B: second wire 7: resin member 71: resin front surface 72: resin back surface 731 to 734: resin side surface 732a: recess 751: first protruding portion 751a: first protruding end surface 752: second protruding portion 76: resin cavity 77: resin portion 78: resin filling,

Claims

[1] Connection structure with: a conductive substrate (4) including a conductive section (421, 422, 423, 424); a terminal including an electrically conductive tubular holder (331) and a metal pin (333) inserted into the holder (331); and a conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) that bonds the conductive section (421, 422, 423, 424) and the holder (331) together, wherein the metal pin (333) has a straight portion (333a) extending along a thickness direction (z) of the conductive section (421, 422, 423, 424), wherein the holder (331) has a first through-hole (332) extending in the thickness direction (z) and into which the straight portion (333a) of the metal pin (333) is inserted, wherein the conductive section (421, 422, 423, 424) has a terminal bonding surface (420a) to which the holder (331) is bonded, and has an opening (420b, 53) formed in the terminal bonding surface (420a), wherein at least a part of an outer peripheral edge (331d) of the opening (420b, 53) is arranged on an inner side of an outer peripheral edge (331d) of the holder (331), when viewed in the thickness direction (z), wherein the holder (331) includes a tubular portion (331a) and an upper flange portion (331b) and a lower flange portion (331c) arranged in the thickness direction on respective sides of the tubular portion (331a), wherein the first through-hole (332) penetrates the tubular portion (331a), the upper flange portion (331b) and the lower flange portion (331c) in the thickness direction (z), and wherein the lower flange portion (331c) is bonded to the conductive section (421, 422, 423, 424). [2] The connecting structure according to claim 1, wherein the outer peripheral edge (331d) of the holder (331) corresponds to an outer peripheral edge (331d) of the lower flange portion (331c) when viewed in the thickness direction (z). [3] The joint structure according to claim 2, wherein the entire outer peripheral edge (331d) of the opening (420b, 53) overlaps with the lower flange portion (331c) when viewed in the thickness direction (z). [4] The connecting structure according to any one of claims 1 to 3, wherein the tubular portion (331a) and the first through-hole (332) each have a circular shape when viewed in the thickness direction (z). [5] The interconnection structure according to claim 4, wherein the conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) has an inflow portion (631) formed in the first through-hole (332), and wherein the inflow portion (631) extends in the thickness direction from an end of the holder (331) located on the conductive section (421, 422, 423, 424) side. [6] The connecting structure according to claim 5, wherein a ratio of a size of the inflow portion (631) in the thickness direction (z) to a diameter of the first through hole (332) is between 10% and 65%, inclusive. [7] Connection structure with: a conductive substrate (4) including a conductive section (421, 422, 423, 424); a terminal including an electrically conductive tubular holder (331) and a metal pin (333) inserted into the holder (331); and a conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) that bonds the conductive section (421, 422, 423, 424) and the holder (331) together, wherein the metal pin (333) has a straight portion (333a) extending along a thickness direction (z) of the conductive section (421, 422, 423, 424), wherein the holder (331) has a first through-hole (332) extending in the thickness direction (z) and into which the straight portion (333a) of the metal pin (333) is inserted, wherein the conductive section (421, 422, 423, 424) has a terminal bonding surface (420a) to which the holder (331) is bonded, and has an opening (420b, 53) formed in the terminal bonding surface (420a), wherein at least a part of an outer peripheral edge (331d) of the opening (420b, 53) is arranged on an inner side of an outer peripheral edge (331d) of the holder (331), when viewed in the thickness direction (z), and wherein an outer peripheral edge (331d) of the conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) is arranged on an outer side of the outer peripheral edge (331d) of the holder (331), when viewed in the thickness direction (z). [8] The interconnection structure according to any one of claims 1 to 7, wherein the conductive section (421, 422, 423, 424) has a second through-hole (420c) connected to the opening (420b, 53), and wherein the conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) is in contact with an inner surface of the second through-hole (420c). [9] The interconnection structure according to claim 8, wherein the conductive substrate (4) has an insulating layer (21, 41), wherein the conductive section (421, 422, 423, 424) is stacked on one side of the insulating layer (21, 41) in the thickness direction (z), wherein the insulating layer (21, 41) has an exposed portion (410) overlapping with the second through-hole (420c) when viewed in the thickness direction, and wherein at least a part of the exposed portion (410) is not in contact with the conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593). [10] The interconnection structure according to any one of claims 1 to 7, wherein the conductive section (421, 422, 423, 424) has a recess (240a, 420d, 732a) connected to the opening (420b, 53). [11] The interconnection structure according to claim 10, wherein the conductive bonding material (25A, 25B, 61, 61A, 61B, 63, 63A, 63B, 591, 592, 593) has a filling portion (32) formed in the recess (240a, 420d, 732a). [12] Semiconductor component (A1) with: a connecting structure according to any one of claims 1 to 11; and a semiconductor element (1) electrically connected to the terminal. [13] A semiconductor device (A1) according to claim 12, wherein the terminal includes a control terminal (33) that controls the semiconductor element (1). [14] A semiconductor device (A1) according to claim 13, further comprising a first power terminal (31) and a second power terminal (32) each electrically connected to the semiconductor element (1), wherein a first source voltage is input to the first power terminal (31), and wherein a second source voltage is input to the second power terminal (32). [15] A semiconductor device (A1) according to claim 14, further comprising a first conductor (24A) and a second conductor (24B) spaced apart from each other in a first direction oriented orthogonal to the thickness direction, wherein the semiconductor element (1) comprises a first semiconductor element (1A) bonded to the first conductor (24A) and a second semiconductor element (1B) bonded to the second conductor (24B), wherein the conductive substrate (4) comprises a first conductive substrate (4A) bonded to the first conductor (24A) and a second conductive substrate (4B) bonded to the second conductor (24B), wherein the conductive section (421, 422, 423, 424) comprises a first conductive section bonded to the first conductive substrate (4A) and a second conductive section bonded to the second conductive substrate (4B), wherein the first power terminal (31) has a first input terminal (31A) connected to the first conductor (24A) and a second input terminal (31B) connected to the second semiconductor element (1B), wherein the second power terminal (32) is an output terminal (32A) connected to the second conductor (24B), and wherein the control terminal (33) comprises a first control terminal (34) bonded to the first conductive section and configured to control the first semiconductor element (1A), and a second control terminal (35) bonded to the second conductive section and configured to control the second semiconductor element (1B). [16] A semiconductor device (A1) according to claim 15, wherein each of the first semiconductor element (1A) and the second semiconductor element (1B) is a switching element that performs a switching action, wherein the first control terminal (34) includes a first drive terminal (34A) that controls the switching action of the first semiconductor element (1A) and a first detection terminal (34B, 34C, 34D) that detects a conduction status of the first semiconductor element (1A), and wherein the second control terminal (35) has a second drive terminal (35A) that controls the switching action of the second semiconductor element (1B) and a second detection terminal (35B, 35C) that detects a conduction status of the second semiconductor element (1B). [17] The semiconductor device (A1) according to claim 16, further comprising a resin member (7) covering a part of each of the first control terminal (34) and the second control terminal (35), the first conductive substrate (4A) and the second conductive substrate (4B), and the first semiconductor element (1A) and the second semiconductor element (1B), wherein the first control terminal (34) and the second control terminal (35) each protrude from the resin member (7) in the thickness direction (z). [18] A semiconductor device (A1) according to claim 17, wherein the resin member (7) has a resin front surface (71) and a resin back surface (72) spaced apart from each other in the thickness direction (z), and a resin side surface (731-734) arranged between the resin front surface (71) and the resin back surface (72) in the thickness direction (z), wherein the resin side surface (731-734) is oriented towards the first direction and wherein the first power terminal (31) and the second power terminal (32) each protrude from the resin side surface (731-734) in the first direction.

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