METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT

Abstract

A method for producing an optoelectronic component is specified. The method comprises - Providing a carrier (1) with a semiconductor chip (2) which is configured to emit, wherein the semiconductor chip (2) has a chip mounting surface (2), a top side (4) opposite the chip mounting surface (3) and a side surface (5) which is arranged between the chip mounting surface (3) and the top side (4), and wherein the semiconductor chip (2) is mounted on the carrier (1) with the chip mounting surface (3), - applying a first precursor (6) to the carrier (1) so that the side surface (5) of the semiconductor chip (2) is at least partially covered with the first precursor (6), - applying a second precursor (7) to the carrier (1) so that the second precursor (7) creeps between the carrier (1) and the first precursor, and - curing the first precursor (6) and the second precursor (7) such that the first precursor (6) forms a transparent resin (8) and the second precursor (7) forms a reflective resin (9), wherein the transparent resin (8) and the reflective resin (9) are in direct physical contact and wherein the transparent resin (8) and the reflective resin (9) cover the side surface (5) at least in places.

Description

[0001] A method for producing an optoelectronic component and an optoelectronic component are specified.

[0002] One object is to provide a simple and efficient method for producing an optoelectronic component. Another object is to provide an optoelectronic component with increased brightness.

[0003] According to one embodiment of the method, a carrier is provided with a semiconductor chip configured to emit electromagnetic radiation. The semiconductor chip has a chip mounting surface, a top side opposite the chip mounting surface, and a side surface arranged between the chip mounting surface and the top side. The semiconductor chip is mounted on the carrier with the chip mounting surface. Furthermore, the carrier provides, in particular, an electrical contact for the semiconductor chip. Preferably, more than one semiconductor chip, for example, four semiconductor chips, are mounted on the carrier.

[0004] According to one embodiment of the method, a first precursor is applied to the carrier such that the side surface of the semiconductor chip is at least partially covered with the first precursor. In particular, the first precursor is in liquid form.

[0005] According to one embodiment of the method, a second precursor is applied to the carrier such that the second precursor creeps between the carrier and the first precursor. In particular, the second precursor is in liquid form. In particular, the first precursor exerts a weight on the second precursor such that the second precursor is prevented from creeping up the side surface of the semiconductor chip to the top side. Furthermore, the first precursor preferably changes a contact angle between the side surface and the second precursor such that the second precursor is prevented from creeping up the side surface of the semiconductor chip to the top side. Without the first precursor, the contact angle is, for example, less than 90°, whereas the contact angle with the first precursor is, for example, at least 90°.

[0006] According to one embodiment of the method, the first precursor is cured such that the first precursor forms a transparent resin. In particular, the transparent resin is in solid form. Here and below, a resin is in particular a synthetic polymer, which can preferably be obtained by irreversibly curing a corresponding precursor. In particular, the first precursor is cured by heating the first precursor to elevated temperatures. For example, the first precursor is heated to at least 50°C, at least 80°C, or at least 100°C. Additionally or alternatively, the first precursor is cured in particular by irradiation, for example with UV light, and / or by using a catalyst.

[0007] According to one embodiment of the method, the second precursor is cured so that the second precursor forms a reflective resin. In particular, the reflective resin is in solid form. The second precursor is cured by heating the second precursor to elevated temperatures. For example, the second precursor is heated to at least 50°C, at least 80°C, or at least 100°C.

[0008] According to one embodiment of the method, the transparent resin and the reflective resin are in direct physical contact. In other words, the transparent resin and the reflective resin have a common interface.

[0009] According to one embodiment of the method, the transparent resin and the reflective resin cover the side surface of the semiconductor chip at least in places. In particular, at least a portion of the side surface is covered by the transparent resin. Preferably, the reflective resin covers the side surface only in places. For example, the transparent resin and / or the reflective resin are in direct physical contact with the side surface.

[0010] In particular, the transparent resin is adjacent to the top surface and covers a portion of the side surface adjacent to the top surface. Preferably, the reflective resin is adjacent to the chip mounting surface and covers a portion of the side surface adjacent to the chip mounting surface. For example, the transparent resin and the reflective resin together completely cover the side surface.

[0011] According to one embodiment of the method, the method comprises: - Providing a carrier with a semiconductor chip which is configured to emit electromagnetic radiation, wherein the semiconductor chip has a chip mounting surface, a top side opposite the chip mounting surface and a side surface arranged between the chip mounting surface and the top side, and wherein the semiconductor chip is mounted on the carrier with the chip mounting surface, - applying a first precursor to the carrier so that the side surface of the semiconductor chip is at least partially covered with the first precursor, - applying a second precursor to the carrier so that the second precursor creeps between the carrier and the first precursor, and - Curing the first precursor and the second precursor such that the first precursor forms a transparent resin and the second precursor forms a reflective resin.

[0012] Preferably, the process steps are carried out in the specified order.

[0013] Other methods for manufacturing an optoelectronic device with a reflective resin include, in particular, applying the reflective resin or its precursor in regions far from the semiconductor chip so that the reflective resin does not cover the side surface of the semiconductor chip, creating a barrier ring around the semiconductor chip that prevents the transparent resin or its precursor from covering the side surface of the semiconductor chip, or introducing recesses into the carrier so that a flow of the transparent resin or its precursor is stopped before it reaches the semiconductor chip. However, with these methods, a portion of a bottom surface of the carrier around the semiconductor chip is free of the reflective resin, resulting in a lower brightness of the optoelectronic device.

[0014] With the method described here, it is possible to completely cover the underside of the carrier around the semiconductor chip with the reflective resin, while only a portion of the side surface of the semiconductor chip is covered by the reflective resin. In particular, the reflective resin is in direct contact with the side surface of the semiconductor chip. This makes it possible to increase the overall brightness of the optoelectronic component.

[0015] According to one embodiment of the method, applying the first precursor comprises applying the first precursor to the carrier such that the first precursor is in direct physical contact with the side surface, and creeping the first precursor up the side surface such that the first precursor covers the side surface at least in places. In particular, the first precursor is sprayed onto the carrier such that it is in direct physical contact with the side surface. Preferably, an amount of the first precursor is applied such that at least 75%, for example at least 90%, of the side surface is covered by the first precursor.

[0016] Applying the first precursor at a distance from the side surface advantageously prevents the top surface of the semiconductor chip from becoming covered by the first precursor and thus the transparent resin. In particular, the top surface is free of the first precursor and, after curing, also of the transparent resin. This way, only the necessary amount of the first precursor is applied.

[0017] According to one embodiment of the method, applying the second precursor comprises applying the second precursor to the carrier at a distance from the side surface. Preferably, the second precursor then creeps between the carrier and the first precursor. In particular, the second precursor is applied at a distance from the first precursor. In this way, it can be ensured that the first precursor is not covered by the second precursor.

[0018] According to one embodiment of the method, the first precursor comprises or consists of a first polysiloxane. In particular, the first precursor is a silicone. Preferably, the first precursor is free of particles, such as scattering particles.

[0019] According to one embodiment of the method, the second precursor comprises a second polysiloxane and scattering particles. In particular, the second precursor is a silicone. Preferably, the second polysiloxane is different from the first polysiloxane.

[0020] Advantageously, the first and second polysiloxanes can be cured under conditions that do not damage the semiconductor chip.

[0021] According to one embodiment of the method, the second precursor and / or the reflective resin comprise at least 10 wt.%, preferably at least 20 wt.%, for example about 30 wt.% of the scattering particles.

[0022] According to one embodiment of the method, the first polysiloxane and the second polysiloxane are immiscible. In other words, the first and second polysiloxanes do not mix. In particular, an interface forms between the first and second precursors, as well as between the transparent resin and the reflective resin. In this way, it can be ensured that the second precursor does not cover the side surface of the semiconductor chip all the way to the top. This can advantageously prevent a loss of brightness.

[0023] According to one embodiment of the method, the side surface of the semiconductor chip is partially free of the second precursor and / or the reflective resin. In other words, only a portion of the side surface is covered with the second precursor and the reflective resin. In particular, the side surface is covered with the second precursor and / or the reflective resin up to a certain height, for example, up to a maximum of 50% of the height of the semiconductor chip.

[0024] Furthermore, an optoelectronic component is specified. The optoelectronic component is preferably manufactured using the method described here. Thus, all features and embodiments of the method apply to the optoelectronic component and vice versa.

[0025] According to one embodiment, the optoelectronic component comprises a carrier with a semiconductor chip. In particular, the carrier comprises or consists of an epoxy molding compound. The semiconductor chip is configured to emit electromagnetic radiation. The semiconductor chip has a chip mounting surface, a top side opposite the chip mounting surface, and a side surface arranged between the chip mounting surface and the top side. In particular, the top side is a main emission surface of the semiconductor chip. The semiconductor chip is mounted on the carrier with the chip mounting surface. In particular, at least one semiconductor chip, preferably at least two semiconductor chips, for example four semiconductor chips, are mounted on the carrier. Advantageously, the carrier is configured to mechanically stabilize the semiconductor chip. Furthermore, it is possible for the semiconductor chip to be electrically contacted via the carrier.

[0026] According to one embodiment, the carrier has a cavity. In particular, the semiconductor chip is arranged on a bottom side of the cavity. The cavity increases radiation outcoupling from the optoelectronic component and thus the efficiency of the optoelectronic component.

[0027] According to one embodiment, the optoelectronic component comprises a transparent resin that covers the side surface of the semiconductor chip at least in places. The transparent resin is preferably transparent to the electromagnetic radiation emitted by the semiconductor chip. For example, the transparent resin transmits at least 85%, at least 90%, or at least 95% of the electromagnetic radiation emitted by the semiconductor chip. In particular, the transparent resin is free of scattering particles or fillers. For example, the top side of the semiconductor chip is free of the transparent resin.

[0028] According to one embodiment, the optoelectronic component comprises a reflective resin that only partially covers the side surface of the semiconductor chip. In particular, the reflective resin is in direct physical contact with the transparent resin. In other words, the transparent resin and the reflective resin share a common interface. Preferably, the reflective resin is diffusely reflective. For example, the reflective resin has a white appearance in daylight. Advantageously, the reflective resin increases the brightness of the optoelectronic component.

[0029] According to one embodiment of the optoelectronic component, the reflective resin is arranged between the carrier and the transparent resin. In particular, the transparent resin covers the reflective resin at least in places. This structure preferably leaves the side surface of the semiconductor chip partially free of the reflective resin. This increases the outcoupling efficiency of the optoelectronic component.

[0030] According to one embodiment, the optoelectronic component comprises a carrier with a semiconductor chip which is configured to emit electromagnetic radiation, wherein the semiconductor chip has a chip mounting surface, a top side opposite the chip mounting surface and a side surface which is arranged between the chip mounting surface and the top side, and wherein the semiconductor chip is mounted on the carrier with the chip mounting surface, a transparent resin which is permeable to the electromagnetic radiation emitted by the semiconductor chip and covers the side surface at least in places, and a reflective resin which is in direct physical contact with the transparent resin and covers the side surface only in places, wherein the reflective resin is arranged between the carrier and the transparent resin.

[0031] According to one embodiment of the optoelectronic component, the transparent resin and the reflective resin are in direct physical contact with the side surface of the semiconductor chip. In particular, the semiconductor chip is completely surrounded by the reflective resin. In this way, the carrier surrounding the semiconductor chip can be completely covered with the reflective resin, thereby preventing absorption of the electromagnetic radiation emitted by the semiconductor chip by the carrier.

[0032] According to one embodiment of the optoelectronic component, less than 50% of the side surface is covered with the reflective resin. In particular, less than 50% of the height of the side surface of the semiconductor chip is covered with the reflective resin. Compared to an optoelectronic component in which the side surface of the semiconductor chip is completely covered with the reflective resin, the brightness of the optoelectronic component can be advantageously increased because less of the radiation exit surface is covered with the reflective resin.

[0033] According to one embodiment of the optoelectronic component, the reflective resin comprises scattering particles.

[0034] In particular, a diffusely reflective property of the reflective resin results from the scattering particles. The scattering particles are preferably inorganic particles, for example, having a high refractive index. The scattering particles are, for example, colorless particles. The scattering particles preferably comprise or consist of a material selected from the group consisting of an oxide, a sulfate, a sulfide, a carbonate, and combinations thereof.

[0035] According to one embodiment of the optoelectronic component, the scattering particles comprise or consist of a material selected from the group consisting of TiO2, ZrO2, BaSO4, and mixtures thereof. These materials are, in particular, colorless and have a high refractive index.

[0036] According to one embodiment of the optoelectronic component, the transparent resin comprises a first cured polysiloxane. Preferably, the first cured polysiloxane is produced from the first polysiloxane in the first precursor of the process described here. The first cured polysiloxane is, for example, a silicone. In particular, a silicone is composed of M units (R3SiO-) and D units (-OSiR2O-).

[0037] According to one embodiment of the optoelectronic component, the reflective resin comprises a second cured polysiloxane, such as a silicone. Preferably, the second cured polysiloxane is produced from the second polysiloxane in the second precursor of the process described here. In particular, the scattering particles are homogeneously distributed in the second cured polysiloxane.

[0038] According to one embodiment of the optoelectronic component, the first cured polysiloxane is different from the second cured polysiloxane. This preferably prevents mixing of the transparent resin and the reflective resin during the manufacture of the optoelectronic component. Thus, the side surface of the semiconductor chip is only partially covered by the reflective resin.

[0039] According to one embodiment of the optoelectronic component, the reflective resin bulges into the transparent resin. In particular, the thickness of the reflective resin has a maximum in the region where the reflective resin is covered by the transparent resin.

[0040] According to one embodiment of the optoelectronic component, the contact angle (γ) between the side surface and the reflective resin is at least 90°. A contact angle of less than 90° leads, in particular, to complete wetting of the side surface by the reflective resin. With a contact angle of at least 90°, the side surface is, in particular, not completely wetted by the reflective resin. The contact angle of at least 90° preferably results in an optoelectronic component with a semiconductor chip being only partially covered by the reflective resin and thus exhibiting increased brightness.

[0041] According to one embodiment of the optoelectronic component, the carrier has bases on an underside. In particular, the semiconductor chip is arranged on the bases such that a space is created between the underside of the carrier and the semiconductor chip. The bases are, for example, spacers of the carrier or solder connections. If the carrier has the cavity, the bases are preferably arranged on the underside of the cavity.

[0042] According to one embodiment of the optoelectronic component, a reflective layer is arranged in the space between the underside and the semiconductor chip. The reflective layer, in particular, increases the radiation coupling out of the optoelectronic component, since the radiation emitted by the semiconductor chip toward the carrier is reflected by the reflective layer. This effect is not achieved, in particular, by other optoelectronic components that have a barrier ring around the semiconductor chip, which prevents the reflective resin from filling the space between the underside and the semiconductor chip and thus forming a reflective layer.

[0043] According to one embodiment of the optoelectronic component, the reflective layer comprises scattering particles. This means that the reflective layer is preferably diffusely reflective. In particular, the scattering particles of the reflective layer comprise a colorless and / or inorganic material, such as TiO2, ZrO2, BaSO4, and mixtures thereof.

[0044] According to one embodiment of the optoelectronic component, the top side of the semiconductor chip is free of the transparent resin. The outcoupling efficiency of the optoelectronic component can be increased if the top side is free of the transparent resin.

[0045] According to one embodiment of the optoelectronic component, the reflective resin is partially free of the transparent resin. In other words, the transparent resin does not completely cover the reflective resin. In particular, the transparent resin covers the reflective resin only in an area around the semiconductor chip.

[0046] According to one embodiment of the optoelectronic component, the side surface comprises or consists of sapphire. This means that the semiconductor chip is, for example, a sapphire chip. In particular, the semiconductor chip is a flip chip.

[0047] A flip chip, in particular, has a substrate on which a semiconductor layer sequence with a radiation-generating active zone has been epitaxially grown. The substrate is generally transparent at least to electromagnetic radiation generated in the active zone. A side surface of the substrate preferably forms part of the radiation exit surface of the semiconductor chip. In particular, the side surface of the semiconductor chip is at least partially formed by the side surface of the substrate. Two electrical contacts are typically arranged on a rear side of the flip chip, which are provided for electrically contacting the semiconductor chip. The front side of the flip chip is preferably free of electrical contacts.

[0048] According to one embodiment of the optoelectronic component, a sidewall of the cavity is covered at least partially with the reflective resin. Preferably, the reflective resin also covers the underside of the cavity that is not covered by the semiconductor chip. In other words, the underside of the cavity can be completely covered by the semiconductor chip and the reflective resin.

[0049] Advantageous embodiments and further developments of the method for producing an optoelectronic component and of the optoelectronic component will become apparent from the exemplary embodiments described below in conjunction with the figures.

[0050] In the figures: Fig. 1 to 5 show schematic sectional views of steps of a method for producing an optoelectronic component according to an embodiment. Fig. 6 shows a schematic sectional view of an optoelectronic component according to a comparative example. Fig. 7 shows a schematic sectional view of an optoelectronic component according to an embodiment. Fig. Figure 8 shows a picture of a laboratory test of the process for manufacturing an optoelectronic device. Fig. 9 shows an image of an optoelectronic component according to an embodiment. Fig. 10 shows a scanning electron microscope (SEM) image of a cross section of an optoelectronic device according to an embodiment. Fig. 11 shows a schematic view of an optoelectronic component according to an embodiment. Fig. 12 shows a schematic sectional view of an optoelectronic component according to an embodiment. Fig. 13 shows a schematic sectional view of an optoelectronic component according to an embodiment.

[0051] In the exemplary embodiments and figures, components of the same type or with similar functions are provided with the same reference numerals. The elements depicted in the figures and their relative sizes are not to be considered true to scale. Rather, individual elements may be depicted at an exaggerated size for the purpose of better illustration and / or better understanding.

[0052] According to the embodiment of the method for producing an optoelectronic component 10 of Fig. 1 to 5, a carrier 1 is provided with a semiconductor chip 2 which is configured to emit electromagnetic radiation (not shown). The semiconductor chip 2 has a chip mounting surface 3. The semiconductor chip 2 is mounted on the carrier 1 with the chip mounting surface 3. The semiconductor chip 2 further has an upper side 4 opposite the chip mounting surface 3. The upper side 4 is in particular a main emission surface of the semiconductor chip 2. A side surface 5 is arranged between the chip mounting surface 3 and the upper side 4. The semiconductor chip 2 is preferably in the shape of a cuboid. In this case, the side surface 5 is formed by the four side surfaces of the cuboid.

[0053] A first precursor 6 is applied to the carrier 1 so that it is in direct physical contact with the side surface 5 ( Fig. 1). In particular, the first precursor 6 is applied to the carrier 1 around the semiconductor chip 2. The first precursor 6 is applied by dispensing, in particular by spraying. The first precursor 6 comprises a first polysiloxane and is free of stray particles or fillers. For example, a silicone elastomer cured at a temperature of approximately 150°C is used as the first polysiloxane.

[0054] The first precursor 6 creeps up the side surface 5 so that the first precursor 6 covers the side surface 5 at least in places, as in Fig. 2. In particular, the first precursor 6 completely covers the side surface 5. Preferably, the first precursor 6 pre-occupies the side surface 5.

[0055] As in Fig. 3, a second precursor 7 is applied to the carrier 1. The second precursor 7 is applied to the carrier at a distance from the semiconductor chip 2 and the first precursor 6 by spraying. The second precursor 7 is applied in particular around the semiconductor chip 2 and the first precursor 6. The second precursor 7 comprises a second polysiloxane and scattering particles 18. The first polysiloxane of the first precursor 6 and the second polysiloxane of the second precursor 7 differ from one another. The first precursor 6 and the second precursor 7 are immiscible. The scattering particles 18 comprise a colorless inorganic material such as TiO2, ZrO2, or BaSO4. A silicone, for example, is used as the second polysiloxane, and TiO2 particles with a density of 4.0 g / cm3 are used as the scattering particles 18. 3 and a TiO2 content of at least 92.5%. The second precursor 7 in this case has approximately 35 wt.% scattering particles 18.

[0056] After applying the second precursor 7 to the carrier 1, the second precursor 7 creeps between the carrier 1 and the first precursor 6, as in Fig. 4. This means that the second precursor 7 creeps under the first precursor 6. This can be explained by the fact that the second precursor 7 has a higher density than the first precursor 6 due to the scattering particles 18 and / or the composition of the second polysiloxane.

[0057] The second precursor 7 creeps up the side surface 5, so that it covers only part of the side surface 5. Another part of the side surface 5 is covered by the first precursor 6. This effect can be explained by the following two mechanisms: The first precursor 6 can change the contact angle between the second precursor 7 and the side surface 5 from wetting to non-wetting. A wetting contact angle is, in particular, at most 90°. A non-wetting contact angle is, for example, at least 90°.

[0058] In addition, the first precursor 6 provides a weight to the second precursor 7. In this way, the second precursor 7 is prevented from creeping up the side surface 5, in particular completely.

[0059] Curing the first precursor 6 and the second precursor 7, for example at elevated temperatures such as at least 50°C, at least 80°C, or at least 100°C, results in the formation of a transparent resin 8 and a reflective resin 9. In this way, an optoelectronic component 10 is produced. The first precursor 6 is cured to form the transparent resin 8, while the second precursor 7 is cured to form the reflective resin 9. The transparent resin 8 is transparent to the electromagnetic radiation emitted by the semiconductor chip 2. The transparent resin 8 and the reflective resin 9 are in direct physical contact with one another. Furthermore, the transparent resin 8 and the reflective resin 9 are in direct physical contact with the side surface 5. The transparent resin 8 and the reflective resin 9 each cover the side surface 5 in places.In addition, the reflective resin 9 is in direct physical contact with the carrier 1. The transparent resin 8 covers only a part of the reflective resin 9. The top side 5 of the semiconductor chip 2 is free of the transparent resin 8 and the reflective resin 9.

[0060] Fig. 6 shows an optoelectronic component 10 according to a comparative example. The optoelectronic component 10 has a carrier 1 and a semiconductor chip 2 arranged on the carrier 1 via its chip mounting surface 3. The semiconductor chip 2 has a side surface 5 arranged between the chip mounting surface 3 and a top surface 4 opposite the chip mounting surface 3. The side surface 5 is completely covered with a reflective resin 9 comprising a first cured polysiloxane and scattering particles 18. A contact angle y between the reflective resin 9 and the side surface 5 is less than 90°. This corresponds to complete wetting of the side surface 5 by the reflective resin 9. Due to the complete wetting of the side surface 5, the radiation emitted by the semiconductor chip 2 is emitted only via the top surface 4.

[0061] Fig. 7 shows an optoelectronic component 10 according to an embodiment. The optoelectronic component 10 comprises the carrier 1 and a semiconductor chip 2 which is configured to emit electromagnetic radiation. The semiconductor chip 2 has a chip mounting surface 3, a top side 4 opposite the chip mounting surface 3, and a side surface 5 arranged between the chip mounting surface 3 and the top side 4. The optoelectronic component 10 further comprises a transparent resin 8 and a reflective resin 9. The transparent resin 8 is transparent to the electromagnetic radiation emitted by the semiconductor chip 2. The transparent resin 8 and the reflective resin 9 each cover the side surface 5 in places. The transparent resin 8 and the reflective resin 9 are in direct physical contact with the side surface 5. The reflective resin 9 is arranged between the carrier 1 and the transparent resin 8.A part of the reflective resin 9 is free from the transparent resin 8. The reflective resin 9 is in direct physical contact with the carrier 1 and the transparent resin 8.

[0062] The thickness of the reflective resin 9 depends on the distance from the side surface 4. Specifically, the reflective resin 9 bulges into the transparent resin 8. That is, starting from the side surface 4, the thickness of the reflective resin 9 increases to reach a maximum, and then the thickness of the reflective resin 9 decreases to reach a minimum. Specifically, the maximum lies in a region of the reflective resin 9 covered by the transparent resin 8.

[0063] Due to the transparent resin 8, the contact angle γ between the side surface 5 and the reflective resin 9 is at least 90°. This means that the reflective resin 9 forms a non-wetting contact angle γ with the side surface 5. Since the side surface 5 is only partially covered by the reflective resin 9, the radiation emitted by the semiconductor chip 2 leaves the semiconductor chip via the top side 4 and the side surface 5 not covered by the reflective resin. In this way, the efficiency of the optoelectronic component 10 is increased.

[0064] In Fig. Figure 8 shows a laboratory test of the method for producing an optoelectronic device 10 by means of an image. The laboratory test demonstrates the effectiveness of the method. For the laboratory test, two glass carriers 16 are stacked with an offset. On one side of the stacked glass carriers 16 (right side), a first precursor 6 and then a second precursor 7 are applied and cured, resulting in a transparent resin 8 and a reflective resin 9. On the other side (left side), only the second precursor 7 is applied and cured. The composition of the first precursor 6 and the second precursor 7 is the same as in connection with the Fig. 1 to 5.

[0065] As can be seen from the picture of Fig. As can be seen in Fig. 8, the right side of the stacked glass substrates 16 treated with the first precursor 6 and the second precursor 7 shows a side surface 5 of the upper glass substrate 16 covered with the transparent resin 8 and the reflective resin 9. Only a part of the side surface 5 is covered by the reflective resin 9.

[0066] In contrast, the left side of the stacked glass slides 16, which was treated only with the second precursor 7, shows a side surface 5 of the upper glass slides 16 which is completely covered by the reflective resin 9.

[0067] Fig. 9 shows an image of a sectional view of an optoelectronic component 10 according to an embodiment. The optoelectronic component 10 comprises two semiconductor chips 2 and a carrier 1. In this case, the carrier 1 is completely covered by the semiconductor chips 2 and a reflective resin 9. The semiconductor chips 2 each have a side surface 5. The side surface 5 is covered with the reflective resin 9 and a transparent resin 8. The side surface 5 is only partially covered by the reflective resin 9.

[0068] In Fig. 10 shows an SEM image of a cross-section of an optoelectronic component 10 according to an embodiment. In particular, Fig. 10 a cross-sectional view of the Fig. 9 shown optoelectronic component 10. The optoelectronic component 10 of Fig. 10 comprises a carrier 1. A semiconductor chip 2, which is configured to emit electromagnetic radiation, is mounted on the carrier 1 via a chip mounting surface 3. The semiconductor chip 2 further comprises a top side 4 opposite the chip mounting surface 3 and a side surface 5 arranged between the chip mounting surface 3 and the top side 4.

[0069] The side surface 5 and the carrier 1 are in direct physical contact with a reflective resin 9. The reflective resin 9 comprises a first cured polysiloxane and scattering particles 18, which comprise or consist of, for example, TiO2. In particular, the reflective resin 9 comprises a cured silicone and TiO2 particles with a density of 4.0 g / cm 3and a TiO2 content of at least 92.5%. In the present case, the reflective resin 9 comprises approximately 35% by weight of the scattering particles 18. Less than 50% of the side surface 5 is covered by the reflective resin 9. In particular, less than 50% of the height of the side surface 5 is covered by the reflective resin 9.

[0070] A transparent resin 8 comprising a silicone cured at a temperature of approximately 150°C is arranged on the reflective resin 9. The transparent resin 8 covers part of the side surface 5 of the semiconductor chip 2. The reflective resin 9 bulges into the transparent resin 8. The transparent resin 8 and the reflective resin 9 are in direct physical contact with each other. Thus, the transparent resin 8 and the reflective resin 9 share a common interface 17. The top side 4 of the semiconductor chip 2 is free of the transparent resin 8 and the reflective resin 9.

[0071] In Fig. 11 shows a schematic view of an optoelectronic component 10 according to an embodiment. The optoelectronic component 10 comprises a carrier 1 comprising an epoxy molding compound. The carrier 1 has a cavity 11 with a bottom side 13 and a side wall 15. Four semiconductor chips 2 are mounted on the bottom side 13 of the cavity 11 via their chip mounting surfaces 3. Each semiconductor chip 2 is configured to emit electromagnetic radiation. Each semiconductor chip 2 has a top side 4 opposite the chip mounting surface 3 and a side surface 5 arranged between the top side 4 and the chip mounting surface 3. In particular, the side surface 4 completely surrounds the semiconductor chip 2.

[0072] The optoelectronic component 10 further comprises a transparent resin 8 and a reflective resin 9, both of which are arranged in the cavity 11 of the carrier 1. The transparent resin 8 and the reflective resin 9 each partially cover the side surface 5 of the semiconductor chips 2. In particular, a portion of the side surface 5 is free of the reflective resin 9. The reflective resin 9 is arranged between the carrier 1 and the transparent resin 8. Furthermore, the reflective resin 9 bulges into the transparent resin 8. The reflective resin 9 is partially free of the transparent resin 8. The top side 4 of the semiconductor chips 2 is free of the transparent resin 8.

[0073] As in Fig. 11, the bottom side 13 and the side wall 15 of the cavity 11 are at least partially covered with the reflective resin 9. The fact that the reflective resin 9 partially covers the side wall 15 can be explained by the fact that during the manufacture of the optoelectronic component 10, the precursor for the reflective resin 9 creeps up the side wall to a certain point.

[0074] A schematic sectional view of an optoelectronic component 10 according to an embodiment is shown in Fig. 12. In particular, Fig. 12 a schematic cross-section of the optoelectronic component of Fig. 11. The optoelectronic component of the Fig. 12 comprises a carrier 1 and a semiconductor chip 2. The semiconductor chip 2 is a flip chip.

[0075] The carrier 1 has a cavity 11 in which the semiconductor chip 2 is arranged. The cavity 11 has a sidewall 15 and a bottom side 13. In the present case, the bottom side 13 is the underside of the carrier 1. The bottom side 13 and at least a part of the sidewall 15 are covered with a reflective resin 9. The reflective resin 9 has a second cured polysiloxane and scattering particles 18, which, for example, comprise or consist of TiO2. A thickness of the reflective resin 9 on the sidewall 15 decreases with increasing distance from the bottom side 13. The reflective resin 9 is diffusely reflective.

[0076] The reflective resin 9 is partially covered by a transparent resin 8. That is, the reflective resin 9 is arranged between the transparent resin 8 and the carrier 1. The reflective resin 9 is in direct physical contact with the carrier 1 and the transparent resin 8. The transparent resin 8 comprises a first cured polysiloxane and is transparent to the electromagnetic radiation emanating from the semiconductor chip 2. The first cured polysiloxane and the second cured polysiloxane are different from each other.

[0077] A semiconductor chip 2, which is configured to emit electromagnetic radiation, is arranged on the underside 13 of the cavity 11 of the carrier 1. The semiconductor chip 2 has a chip mounting surface 3, a top side 4 opposite the chip mounting surface 3, and a side surface 5 arranged between the chip mounting surface 3 and the top side 4. The side surface 5 comprises or consists of sapphire. The top side 4 is free of the transparent resin 8 and the reflective resin 9. The side surface 5 is at least partially covered with the transparent resin 8 and the reflective resin 9. The reflective resin 9 only covers the side surface 5 in places. The thickness of the transparent resin 8 on the side surface 5 decreases with increasing distance from the chip mounting surface 3. The thickness of the transparent resin 8 on the reflective resin 9 also decreases with increasing distance from the side surface 5.

[0078] In the present case, the carrier 1 has bases arranged on the underside 13. The bases are spacers 19 of the carrier 1. The spacers 19 are protruding elements on the underside 13 of the carrier 1. The semiconductor chip 2 is arranged on the spacers 19. In this way, a space 12 is created between the underside 13 and the semiconductor chip 2. The space 12 is filled with a reflective layer 14. This means that the reflective layer 14 is arranged between the underside 13 and the semiconductor chip 2. In particular, the reflective layer 14 fills the space 12 at least partially, preferably completely.

[0079] The reflective layer 14 is diffusely reflective. In particular, the reflective layer 14 comprises scattering particles that comprise or consist of TiO2, ZrO2, or BaSO4.

[0080] The Fig. The optoelectronic component 10 shown in Figure 13 comprises a carrier 1 with a cavity 11 having a bottom side 13. A single semiconductor chip 2 is arranged on the bottom side 13 via solder joints 20. The solder joints 20 create a space 12 between the semiconductor chip 12 and the bottom side 13 of the carrier 1. The space 12 is filled with a reflective layer 14 that provides diffuse reflection.

[0081] A side surface 5 of the semiconductor chip 2 is covered with a reflective resin 9 and a transparent resin 8. A top surface 4 of the semiconductor chip 2 is free of both the transparent resin 8 and the reflective resin 9. The transparent resin 8 covers the reflective resin 9 in places. The transparent resin 8 and the reflective resin 9 are in direct physical contact. The transparent resin 8 is free of a filler or scattering particles. The reflective resin 9 has scattering particles 18. As a result, the reflective resin 9 is diffusely reflective. In particular, the reflective resin 9 and the transparent resin 9 are the same as in connection with Fig. 12 described.

[0082] The reflective resin 9 is in direct physical contact with the bottom surface 13 and a side wall 15 of the carrier 1. That is, the reflective resin 9 is arranged between the transparent resin 8 and the carrier 1.

[0083] The features and exemplary embodiments described in connection with the figures can be combined with one another according to further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described in connection with the figures can have alternative or additional features, as described in the general part.

[0084] The description based on the exemplary embodiments does not limit the invention to the exemplary embodiments. Rather, the invention encompasses every novel feature and also every combination of features, in particular, every combination of features in the patent claims and every combination of features in the exemplary embodiments, even if this feature or combination itself is not expressly stated in the patent claims or exemplary embodiments. Reference symbol 1 carrier 2 semiconductor chips 3 Chip mounting surface 4 Top 5 Side surface 6 first precursor 7 second precursor 8 transparent resin 9 reflective resin 10 optoelectronic component 11 Cavity 12 rooms 13 Bottom 14 reflective layer 15 Side wall 16 glass supports 17 Interface 18 scattering particles 19 spacers 20 solder joint γ contact angle

Claims

[1] Method for producing an optoelectronic component (10) comprising - Providing a carrier (1) with a semiconductor chip (2) which is designed to emit electromagnetic radiation, wherein the semiconductor chip (2) has a chip mounting surface (2), a top side (4) opposite the chip mounting surface (3) and a side surface (5) which is arranged between the chip mounting surface (3) and the top side (4), and wherein the semiconductor chip (2) is mounted with the chip mounting surface (3) on the carrier (1), - applying a first precursor (6) to the carrier (1) so that the side surface (5) of the semiconductor chip (2) is at least partially covered with the first precursor (6), - applying a second precursor (7) to the carrier (1) so that the second precursor (7) creeps between the carrier (1) and the first precursor, and - curing the first precursor (6) and the second precursor (7) so that the first precursor (6) forms a transparent resin (8) and the second precursor (7) forms a reflective resin (9). [2] A method for producing an optoelectronic component (10) according to claim 1, wherein the application of the first precursor (6) comprises - applying the first precursor to the support (1) so that the first precursor (6) is in direct physical contact with the side surface (5), and - creeping up the first precursor (6) on the side surface (5) so that the first precursor (6) covers the side surface (5) at least in places. [3] A method for producing an optoelectronic component (10) according to any one of the preceding claims, wherein the application of the second precursor (7) comprises: Applying the second precursor (7) to the carrier (1) at a distance from the side surface (5). [4] A method for producing an optoelectronic component (10) according to any one of the preceding claims, wherein the first precursor (6) comprises a first polysiloxane. [5] A method for producing an optoelectronic component (10) according to the preceding claim, wherein the second precursor (7) comprises a second polysiloxane and scattering particles (18), wherein the second polysiloxane differs from the first polysiloxane. [6] A method for producing an optoelectronic component (10) according to the preceding claim, wherein the first polysiloxane and the second polysiloxane are immiscible. [7] Method for producing an optoelectronic component (10) according to one of the preceding claims, wherein the side surface (5) is partially free of the second precursor (7) and / or the reflective resin (9). [8] Method for producing an optoelectronic component (10) according to one of the preceding claims, wherein - the transparent resin (8) and the reflective resin (9) are in direct physical contact and - the transparent resin (8) and the reflective resin (9) cover the side surface (5) at least in places. [9] Optoelectronic component (10) comprising - a carrier (1) with a semiconductor chip (2) which is designed to emit electromagnetic radiation, wherein the semiconductor chip (2) has a chip mounting surface (3), a top side (4) opposite the chip mounting surface (3) and a side surface (5) which is arranged between the chip mounting surface (3) and the top side (4), and wherein the semiconductor chip (2) is mounted on the carrier (1) with the chip mounting surface (3), - a transparent resin (8) which is transparent to the electromagnetic radiation emitted by the semiconductor chip (2) and covers the side surface (5) at least in places, and - a reflective resin (9) which is in direct physical contact with the transparent resin (8) and covers the side surface (5) only in places, wherein - the reflective resin (9) is arranged between the carrier (1) and the transparent resin (8). [10] Optoelectronic component (10) according to claim 9, wherein the transparent resin (8) and the reflective resin (9) are in direct physical contact with the side surface (5). [11] Optoelectronic component (10) according to one of claims 9 or 10, wherein less than 50% of the side surface (5) is covered by the reflective resin (9). [12] Optoelectronic component (10) according to one of claims 9 to 11, wherein the reflective resin (9) comprises scattering particles (18). [13] Optoelectronic component (10) according to claim 12, wherein the scattering particles (18) comprise a material selected from the group consisting of TiO2, ZrO2, BaSO4 and mixtures thereof. [14] Optoelectronic component (10) according to one of claims 9 to 13, wherein - the transparent resin (8) comprises a first cured polysiloxane, - the reflective resin (9) comprises a second cured polysiloxane, and - the first cured polysiloxane differs from the second cured polysiloxane. [15] Optoelectronic component (10) according to one of claims 9 to 14, wherein the reflective resin (9) bulges into the transparent resin (8). [16] Optoelectronic component (10) according to one of claims 9 to 15, wherein a contact angle (γ) between the side surface (5) and the reflective resin (9) is at least 90°. [17] Optoelectronic component (10) according to one of claims 9 to 16, wherein - the support (1) has bases (19, 20) on an underside (13), - the semiconductor chip (2) is arranged on the bases (19) so that a space (12) is created between the underside (13) and the semiconductor chip (2), - a reflective layer (14) is arranged in the space (12), and - the reflective layer (14) comprises scattering particles. [18] Optoelectronic component (10) according to one of claims 9 to 17, wherein the top side (4) of the semiconductor chip (2) is free of the transparent resin (8). [19] Optoelectronic component (10) according to one of claims 9 to 18, wherein the reflective resin (9) is partially free of the transparent resin (8). [20] Optoelectronic component (10) according to one of claims 9 to 19, wherein the side surface (5) comprises sapphire.

Images