LASER DIODE COMPONENT AND METHOD FOR MANUFACTURING A LASER DIODE COMPONENT

Abstract

A laser diode component (1) is described, comprising - a semiconductor layer stack (2) comprising: - a first semiconductor region (3), - a second semiconductor region (5) and - an active region (4), wherein the first semiconductor region (3) has a projecting region (30) in which the first semiconductor region (3) projects laterally beyond the active region (4) and the second semiconductor region (5), - a dielectric layer (11) covering the semiconductor layer stack (2), - a first contact means (18) for electrically contacting the first semiconductor region (3), comprising: - a first contact layer (91) covering the protruding region (30) of the first semiconductor region (3), and - a first contact column (161), - a second contact means (19) for electrically contacting the second semiconductor region (5), comprising: - a second contact column (162), wherein a first contact surface (161A) of the first contact column (161) laterally surrounds a second contact surface (162A) of the second contact column (162). Furthermore, a method for producing a laser diode component is described.

Description

[0001] A laser diode component and a method for manufacturing a laser diode component are specified. The laser diode component is, for example, a thin-film VCSEL (vertical-cavity surface-emitting laser).

[0002] For example, ultraviolet-emitting thin-film VCSELs are known, which feature a semiconductor layer stack between two dielectric distributed Bragg mirrors and are optically pumped. While the optically pumped thin-film VCSEL may have the disadvantage of a larger device size, an electrically pumped VCSEL must, for example, cope with thermomechanical stresses due to the contacting schemes used to electrically contact the VCSEL.

[0003] One object is to provide a laser diode component with improved reliability. This object is achieved, inter alia, by the laser diode component according to the independent claim. Further embodiments and further developments of the laser diode component are the subject of the dependent claims.

[0004] A further object is to provide a method for producing a laser diode component that enables a higher manufacturing yield. This object is achieved, inter alia, by the method according to the independent claim. Further embodiments and further developments of the method for producing a laser diode component are the subject of the dependent claims.

[0005] According to at least one embodiment of a laser diode component, the component comprises a semiconductor layer stack comprising a first semiconductor region, which may be of a first conductivity type, for example, an n-doped semiconductor region, comprising a second semiconductor region, which may be of a second conductivity type, for example, a p-doped semiconductor region, and comprising an active region for emitting laser radiation, wherein the active region is arranged between the first semiconductor region and the second semiconductor region. The laser diode component is suitable, for example, for emitting laser radiation with a wavelength in the ultraviolet to blue spectral range.

[0006] The active region may comprise a sequence of individual layers forming a quantum well structure, in particular a single quantum well (SQW) or a multiple quantum well (MQW) structure. Furthermore, the first and second semiconductor regions may each comprise a sequence of individual layers, some of which may be undoped or lightly doped.

[0007] The individual layers of the semiconductor regions can be deposited epitaxially on a growth substrate.

[0008] For the semiconductor regions or individual layers of the semiconductor layer stack, materials based on arsenide, phosphide, or nitride compound semiconductors are suitable. In this context, "based on arsenide, phosphide, or nitride compound semiconductors" means that the semiconductor layers are Al n Ga m In 1-n-m As, Al n Ga m In1-n-m P or Al n Ga m In 1-n-m N, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can contain one or more dopants as well as additional components that affect the characteristic physical properties of Al n Ga m In 1-n-m As-, Al n Ga m In 1-n-m P or Al n Ga m In 1-n-m N-materials do not change significantly. For simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, or P or N), even though these may be partially replaced by small amounts of other substances. A quinternary semiconductor consisting of Al, Ga, In (Group III) and P and As (Group V) is also conceivable.

[0009] According to at least one embodiment, the first semiconductor region has a projecting region in which the first semiconductor region projects laterally beyond the active region and the second semiconductor region. "Lateral" means in one or more lateral directions, wherein the one or more lateral directions are parallel to a main extension plane of the semiconductor layer stack.

[0010] According to at least one embodiment, the laser diode component comprises a dielectric layer covering the semiconductor layer stack. For example, the dielectric layer is arranged on opposite surfaces of the semiconductor layer stack, with the active region located therebetween. The dielectric layer may be a multilayer comprising at least two sublayers made of different dielectric materials with different refractive indices. Suitable materials for the dielectric layer or sublayers are dielectric materials such as titanium oxide and silicon dioxide.

[0011] According to at least one embodiment, the laser diode component comprises a first contact means for electrically contacting the first semiconductor region and a second contact means for electrically contacting the second semiconductor region.

[0012] The first contact means comprises, for example, a first contact layer that covers the protruding region of the first semiconductor region. The first contact layer can electrically contact the first semiconductor region. The first contact layer can be a metallic layer formed from a metal or a metal composition. The first contact means can further comprise a first contact pillar that is arranged on a side of the first contact layer facing away from the first semiconductor region. The first contact pillar can electrically contact the first contact layer. The first contact pillar can be a multilayer metal layer formed from one or more metals or metal compositions. The first contact pillar can, for example, comprise a metal layer made of Ni and a first contact area containing, for example, Au. The first contact pillar can be thicker than the first contact layer.The metal layer may have a thickness between 5 and 100 µm, preferably between 10 and 50 µm, particularly preferably between 20 and 30 µm.

[0013] The second contact means comprises, for example, a connection layer that partially covers the second semiconductor region. The connection layer is formed, for example, from a transparent conductive oxide (TCO) and / or has a semiconductor tunnel junction. The connection layer can be designed to have low optical absorption. The connection layer can be arranged in the vertical direction between the dielectric layer and the second semiconductor region. The vertical direction can run parallel to a radiation emission direction.

[0014] The second contact means may further comprise a second contact layer that laterally surrounds the connection layer. Furthermore, the second contact layer may partially overlap laterally with the connection layer. The second contact layer is, for example, a metallic layer formed from a metal or a metal composition. The second contact layer may electrically contact the connection layer.

[0015] Furthermore, the second contact means may comprise a second contact pillar arranged on a side of the second contact layer facing away from the second semiconductor region. The second contact pillar may be a single-layer or multi-layer metallic layer formed from one or more metals or metal compositions. The second contact pillar may comprise, for example, a Ni layer and a second contact area containing, for example, Au. The second contact pillar may be thicker than the second contact layer. The second contact pillar may electrically contact the second contact layer.

[0016] According to at least one embodiment, the first contact surface of the first contact pillar laterally surrounds the second contact surface of the second contact pillar. Furthermore, the first contact pillar can laterally surround the second contact pillar. It is possible for the first contact surface or first contact pillar not to completely laterally surround the second contact surface or second contact pillar. The first contact surface and the second contact surface can be arranged in a common contact plane. For example, the common contact plane is arranged on a side of the active region that is opposite a radiation exit side of the laser diode component. The laser diode component is therefore designed as a flip chip.

[0017] According to at least one embodiment of a laser diode component, this comprises: - a semiconductor layer stack comprising: - a first semiconductor region, - a second semiconductor region and - an active region for emitting laser radiation, wherein the active region is arranged between the first semiconductor region and the second semiconductor region, and wherein the first semiconductor region has a projecting region in which the first semiconductor region projects laterally beyond the active region and the second semiconductor region, - a dielectric layer covering the semiconductor layer stack, - a first contact means for electrically contacting the first semiconductor region, comprising: - a first contact layer covering the protruding region of the first semiconductor region, and - a first contact column arranged on a side of the first contact layer facing away from the first semiconductor region, - a second contact means for electrically contacting the second semiconductor region, comprising: - a connection layer partially covering the second semiconductor region, - a second contact layer laterally surrounding the connection layer, and - a second contact column arranged on a side of the second contact layer facing away from the second semiconductor region, wherein a first contact surface of the first contact column laterally surrounds a second contact surface of the second contact column.

[0018] According to at least one embodiment or configuration, the first contact column and the second contact column are spaced apart by a separation trench. The separation trench has, for example, a rotationally symmetric shape with respect to a central axis of the laser diode component. The separation trench can have the shape of a circular ring. Advantageously, the rotationally symmetric shape of the separation trench contributes to compensating the thermomechanical stresses and thus reducing the risk of damage.

[0019] According to at least one embodiment or configuration, the first contact surface and the second contact surface each have a symmetrical shape, for example, a rotationally symmetrical shape with respect to a central axis of the laser diode component. The shape of the first contact surface may be symmetrical, but may deviate slightly from a rotationally symmetrical shape in a region in which a second component electrode is to be arranged to contact the second contact surface.

[0020] The second contact surface has, for example, a circular shape. Furthermore, the first contact surface can have a circular or nearly circular edge facing the second contact surface and a rectangular or nearly rectangular edge facing away from the second contact surface.

[0021] The symmetrical, for example rotationally symmetrical, shape of the contact surfaces ensures a high level of robustness of the laser diode component.

[0022] According to at least one embodiment or configuration, the second contact layer and the connection layer each have a rotationally symmetrical shape with respect to the central axis of the laser diode component, such as a circular or annular shape. However, the shape of the first contact layer may deviate slightly from a rotationally symmetrical shape. For example, the first contact layer may have a circular inner edge and a rectangular outer edge, with one corner of the outer edge being cut off. At this cut-off corner, a sacrificial layer of a semiconductor layer sequence provided for producing the semiconductor layer stack is accessible, as will be explained in more detail below.

[0023] According to at least one embodiment or configuration, the laser diode component comprises an insulating layer, wherein the insulating layer partially covers the second semiconductor region and has an opening in which the connection layer is arranged and contacts the second semiconductor region. In the finished component, the insulating layer can serve as a current-limiting layer for laterally limiting a current flow through the semiconductor layer stack. The insulating layer is formed, for example, from a transparent, electrically insulating material such as SiO2.

[0024] According to at least one embodiment or configuration, the second semiconductor region and the active region do not protrude laterally beyond the insulating layer. In particular, a lateral extent and shape of the second semiconductor region and the active region are determined by the insulating layer. During the manufacturing process, the insulating layer can serve as a mask layer to structure the semiconductor layer sequence such that, in the semiconductor layer stack, the first semiconductor region protrudes laterally beyond the second semiconductor region and the active region. The insulating layer can have the shape of a circular ring. Therefore, the second semiconductor region and the active region can have a circular lateral edge, while the first semiconductor region can have a rectangular lateral edge.

[0025] According to at least one embodiment or configuration, the dielectric layer is arranged at least partially on all outer surfaces of the semiconductor layer stack. An outer surface is understood to mean a surface of the semiconductor layer stack that delimits the semiconductor layer stack to the outside and is not arranged within the semiconductor layer stack. In other words, the semiconductor layer stack can be arranged within the dielectric layer. An outer surface can be a first main surface, a second main surface, or a side surface of the semiconductor layer stack.

[0026] According to at least one embodiment or configuration, the dielectric layer forms a laser resonator of the laser diode component. In particular, a first part of the dielectric layer and a second part of the dielectric layer, which are arranged on opposite sides of the active region, can form the laser resonator. The first and second parts of the dielectric layer can each form a DBR mirror (DBR: Distributed Bragg Reflector). For example, a thickness of the semiconductor layer stack is optimized to form an optical resonator between the first and second parts of the dielectric layer.

[0027] According to at least one embodiment or configuration, the dielectric layer comprises a first recess and a second recess, and the first contact means is partially arranged in the first recess and the second contact means is partially arranged in the second recess. Furthermore, the dielectric layer can have an opening on a side surface of the semiconductor layer stack. In particular, the opening is located in the region of the above-mentioned cut-off corner.

[0028] According to at least one embodiment or configuration, the laser diode component comprises a mirror layer, which may be metallic and may contain, for example, Al or Ag. The mirror layer may be arranged on a side of the dielectric layer facing away from the connection layer and may laterally overlap with the connection layer.

[0029] According to at least one embodiment or configuration, the laser diode component comprises a carrier comprising a first connecting means and a second connecting means, wherein a first connecting surface of the first connecting means is connected to the first contact surface of the first contact means and a second connecting surface of the second connecting means is connected to the second contact surface of the second contact means. For example, the first connecting surface at least partially surrounds the second connecting surface laterally. In particular, the shape of the first connecting surface substantially corresponds to the shape of the first contact surface, and the shape of the second connecting surface substantially corresponds to the shape of the second contact surface.

[0030] According to at least one embodiment or configuration, the carrier comprises a carrier substrate made of a material that corresponds to the thermal expansion coefficient of the material of the semiconductor layer stack, such as silicon, ceramic, or suitable metal materials. The first connecting surface and the second connecting surface can be arranged on a side of the carrier substrate facing the semiconductor layer stack. Other parts of the first and second connecting means can be arranged within the carrier substrate and / or on a side of the carrier substrate facing away from the semiconductor layer stack.

[0031] According to at least one embodiment or configuration, the semiconductor layer stack is arranged on the carrier such that the second semiconductor region faces the carrier. The carrier can be arranged on a rear side of the laser diode component.

[0032] According to at least one embodiment or configuration, the laser diode component comprises a first component electrode and a second component electrode for electrically contacting the laser diode component from the outside, wherein the first component electrode is part of the first connecting means and the second component electrode is part of the second connecting means.

[0033] According to at least one embodiment or configuration, the laser radiation is emitted primarily at a front side of the laser diode component facing away from the carrier. The front side is thus the radiation exit side of the laser diode component. The laser diode component is, for example, a VCSEL.

[0034] According to at least one embodiment or configuration, the semiconductor layer stack is substantially free of a growth substrate. In other words, the laser diode component can be a thin-film component. "Substantially free" means that the growth substrate is missing or only partially present. The thin-film construction of the laser diode component provides higher device efficiency.

[0035] The following describes embodiments or configurations of a method suitable for producing a laser diode component in the above-mentioned sense. This means that all features described in connection with the laser diode component also apply to the method, and vice versa.

[0036] According to at least one embodiment of a method, this comprises the following steps: - Providing a semiconductor layer sequence for producing at least one semiconductor layer stack, wherein the semiconductor layer sequence comprises: - a first semiconductor layer, - a second semiconductor layer and - an active layer for emitting laser radiation, wherein the active layer is arranged between the first semiconductor layer and the second semiconductor layer, - Applying a mask layer to parts of the second semiconductor layer, - applying a connection layer structure to parts of the second semiconductor layer to produce at least one connection layer, - Structuring the semiconductor layer sequence by means of the mask layer such that the first semiconductor layer has at least one projecting region in which the first semiconductor layer projects laterally beyond the active layer and the second semiconductor layer, - applying a contact layer structure for producing at least one first contact layer and at least one second contact layer to the at least one projecting region of the first semiconductor layer and to the second semiconductor layer such that the contact layer structure laterally surrounds the connection layer structure, - applying a first dielectric layer structure to the semiconductor layer sequence in order to produce a first part of at least one dielectric layer, - Applying a contact column structure to the first dielectric layer structure such that a first contact surface of at least a first part of the contact column structure, which is provided for producing at least one first contact column, laterally surrounds a second contact surface of at least a second part of the contact column structure, which is provided for producing at least one second contact column.

[0037] The first semiconductor layer is provided for producing a first semiconductor region of the at least one semiconductor layer stack and can thus correspond to the first semiconductor region with regard to its layer structure and / or with regard to its material composition as mentioned above. The second semiconductor layer is provided for producing a second semiconductor region of the at least one semiconductor layer stack and can thus correspond to the second semiconductor region, in particular with regard to its layer structure and / or its material composition as mentioned above. And the active layer is provided for producing an active region of the at least one semiconductor layer stack and can thus correspond to the active region, in particular with regard to its layer structure and / or material composition as mentioned above.

[0038] According to at least one embodiment or configuration, the semiconductor layer sequence is provided on a growth substrate, for example, a GaN growth substrate. The first semiconductor layer can be arranged facing the growth substrate, while the second semiconductor layer can be arranged facing away from the growth substrate.

[0039] According to at least one embodiment or configuration, the semiconductor layer sequence, for example the first semiconductor layer, comprises a highly doped sacrificial layer facing the growth substrate. The sacrificial layer is, for example, n-doped, for example with Si. Furthermore, the sacrificial layer can have a doping concentration of 2 × 10 18 up to 10 20 cm -3 , especially 8 × 10 18 up to 2 × 10 19 cm -3The sacrificial layer is followed, for example, by a semiconductor layer with a lower doping concentration on a side facing away from the growth substrate.

[0040] According to at least one embodiment or configuration, the step of applying the mask layer is performed before the step of applying the connection layer structure, and the step of structuring the semiconductor layer sequence using the mask layer is performed after the step of applying the connection layer structure. In the finished laser diode component, a portion of the mask layer associated with a semiconductor layer stack can form the above-mentioned insulating layer and thus correspond to the insulating layer, in particular with regard to its structure and material composition.

[0041] The connection layer structure is provided for producing a connection layer of at least one laser diode component and can therefore correspond to the connection layer as mentioned above, in particular with regard to its layer structure and / or its material composition.

[0042] According to at least one embodiment or configuration, in a first subsequent structuring step following the structuring of the second semiconductor layer and the active layer, the first semiconductor layer is structured such that an upper region and a lower region are created, wherein the lower region is closer to the growth substrate than to the active layer and protrudes laterally beyond the upper region, which is closer to the active layer than to the growth substrate. In particular, the upper region is formed with a cut-off corner. The sacrificial layer can close off the lower region on a side facing the growth substrate.

[0043] According to at least one embodiment or configuration, in a second subsequent structuring step, the lower region is structured such that it no longer protrudes laterally beyond the upper region except at the cut-off corner. The sacrificial layer is accessible at the cut-off corner. Furthermore, the lower region is structured such that the growth substrate protrudes laterally beyond the lower region in a laterally projecting region.

[0044] According to at least one embodiment or configuration, the step of applying the contact layer structure is performed after the second subsequent structuring step. The contact layer structure can correspond to the first and second contact layers, in particular with regard to their layer structure and / or their material composition, as mentioned above. Advantageously, the first and second contact layers can be produced in a common step by providing the contact layer structure.

[0045] According to at least one embodiment or configuration, the step of providing the first dielectric layer structure follows the step of applying the contact layer structure. The first dielectric layer structure can correspond to the dielectric layer, in particular with regard to its layer structure and / or its material composition, as mentioned above.

[0046] For example, the first dielectric layer structure can be provided such that it covers the laterally projecting region of the growth substrate. Furthermore, the first dielectric layer structure can be provided such that it extends from the growth substrate across outer surfaces of the semiconductor layer sequence to the contact layer structure on the second semiconductor layer.

[0047] For example, the first dielectric layer structure is provided with an opening at the cut corner of the upper region, and the highly doped sacrificial layer is stripped by an etchant introduced through the at least one opening. The inventors have found that introducing the etchant from one corner rather than from all sides improves the stripping of the sacrificial layer.

[0048] Advantageously, the first dielectric layer structure in the laterally projecting region of the growth substrate forms a holding structure which holds the detached part of the semiconductor layer sequence to the growth substrate after the sacrificial layer has been detached.

[0049] According to at least one embodiment or configuration, the first dielectric layer structure is provided with a first recess in a region of the contact layer structure provided for a first contact layer and with a second recess in a region of the contact layer structure provided for a second contact layer.

[0050] According to at least one embodiment or configuration, the step of applying the contact column structure follows the step of applying the first dielectric layer structure. The at least one first contact column and the at least one second contact column can be produced from the contact column structure in a common step.

[0051] The step of applying the contact column structure may include the deposition of a seed layer, the electrodeposition of a metal layer, for example, a Ni layer, and the deposition of contact pads, for example, made of Au. A photomask may be applied prior to the deposition of the seed layer and removed again after the deposition of the contact pads, wherein the photomask imparts the intended shapes to the at least one first contact column and the at least one second contact column.

[0052] According to at least one embodiment or configuration, the step of removing the sacrificial layer is performed after the step of applying the contact pillar structure. The removal may include an electrochemical etching process.

[0053] According to at least one embodiment or configuration, the step of detaching the sacrificial layer is followed by a step of applying a carrier structure to a side of the semiconductor layer sequence facing away from the growth substrate. The carrier structure is provided for producing at least one carrier and can thus correspond to the carrier, in particular with regard to its structure and / or material composition, as mentioned above. Thus, the carrier structure can comprise a carrier substrate structure, from which at least one carrier substrate emerges, and a first connecting means structure and a second connecting means structure, from which first and second connecting means emerge.

[0054] The carrier structure can be connected to the semiconductor layer sequence by thermocompression or soldering in a wafer-to-wafer bonding process, wherein the first connecting means structure is connected to a first contact means structure including the at least one first part of the contact column structure and the second connecting means structure is connected to a second contact means structure including the at least one second part of the contact column structure.

[0055] According to at least one embodiment or configuration, after the step of applying the carrier structure, the growth substrate is detached by detaching, for example breaking, the holding structure.

[0056] According to at least one embodiment or configuration, after the step of detaching the growth substrate, a second dielectric layer structure is applied to a side of the semiconductor layer sequence facing away from the carrier structure in order to produce a second part of the at least one dielectric layer. The second dielectric layer structure can correspond to the dielectric layer, in particular with regard to its layer structure and / or its material composition, as mentioned above.

[0057] The manufacturing process enables the production of a large number of laser diode components in a single assembly, with the laser diode components being separated from the assembly at a finished stage. Production in the assembly enables more cost-effective production of the laser diode components.

[0058] The laser diode component is suitable as a light source in laser-based imagers for AR (Augmented Reality) and VR (Virtual Reality) applications.

[0059] Further preferred embodiments and further developments of the laser diode component and of the method for producing the laser diode component emerge from the exemplary embodiments explained below in connection with the figures. Fig. 1 to 14 show schematic cross-sectional and plan views of method steps of embodiments of a manufacturing method for producing a laser diode component, Fig. 15A-15C, 16A-16B and 17A-17B show schematic cross-sectional and top view views of embodiments of a laser diode device.

[0060] Identical, similar, or functionally identical elements may be identified in the figures with identical or similar reference symbols. The figures are schematic representations and therefore not necessarily to scale. Rather, comparatively small elements and, in particular, layer thicknesses may be exaggerated for clarity.

[0061] According to an embodiment of a method for producing a laser diode component, the method comprises providing a semiconductor layer sequence 2' (see Fig. 1) for producing at least one semiconductor layer stack 2 (see Fig. 15B, Fig. 16B, Fig. 17B). The semiconductor layer sequence 2' comprises a first semiconductor layer 3', a second semiconductor layer 5', and an active layer 4' for emitting laser radiation, wherein the active layer 4' is arranged between the first semiconductor layer 3' and the second semiconductor layer 5'.

[0062] The semiconductor layer sequence 2' is provided on a growth substrate 6', which may comprise or consist of a semiconductor material such as GaN. The first semiconductor layer 3' faces the growth substrate 6', while the second semiconductor layer 5' faces away from the growth substrate 6'.

[0063] Materials based on arsenide, phosphide, or nitride compound semiconductors are suitable for the semiconductor layers 3', 4', and 5' of the semiconductor layer sequence 2'. The meaning of the term "based on arsenide, phosphide, or nitride compound semiconductors" has already been explained above and will continue to be used as such.

[0064] The first semiconductor layer 3' is provided for producing a first semiconductor region 3 of at least one semiconductor layer stack 2 (see Fig. 15B, Fig. 16B, Fig. 17B) and can thus correspond to the first semiconductor region 3 at least partially with regard to its layer structure and / or its material composition as mentioned above. The first semiconductor layer 3' is of a first conductivity type, which can be an n-conductivity type, and has a multilayer structure. From the side facing the growth substrate 6' to the side facing the active layer 4', the first semiconductor layer 3' comprises, in the order mentioned, an n-doped current spreading layer 31', a highly n-doped sacrificial layer 32', an unintentionally doped layer 33', and an n-doped layer 34'. For example, all layers 31', 32', 33', and 34' are GaN layers.In addition, the unintentionally doped layer 33' has a lower doping concentration than the sacrificial layer 32', which ensures a well-defined etch stop and a smooth surface when the semiconductor layer sequence 2' is removed from the growth substrate 6' by electrochemical etching of the sacrificial layer 32' (see . Fig. 11B). The sacrificial layer 32' may have a doping concentration of 2 × 10 18 up to 10 20 cm -3 have, in particular 8 × 10 18 up to 2 × 10 19 cm -3 . The n-dopant may be Si. The n-doped current spreading layer 31' may have a doping concentration of about 3 × 10 18 cm -3 have.

[0065] The active layer 4', which is provided for producing an active region 4 of at least one semiconductor layer stack 2 (see Fig. 15B, Fig. 16B, Fig. 17B), may correspond to the active region 4, in particular with regard to its layer structure and / or its material composition as mentioned above, and may comprise a sequence of individual layers forming a quantum well structure, in particular a single quantum well structure (SQW structure) or multiple quantum well structure (MQW structure).

[0066] The second semiconductor layer 5' is provided for producing a second semiconductor region 5 of at least one semiconductor layer stack 2 (see Fig. 15B, Fig. 16B, Fig. 17B) and can therefore correspond to the second semiconductor region 5, in particular with regard to its layer structure and / or its material composition as mentioned above. The second semiconductor layer 5' is of a second conductivity type, which can be a p-conductivity type, and has a single-layer or multi-layer structure. The second semiconductor layer 5' can be a GaN layer.

[0067] The layers 3', 4', 5' can be deposited epitaxially on the growth substrate 6'.

[0068] As shown in the schematic plan view of Fig. 2A and the schematic cross-sectional view of Fig. 2B along the Fig. As shown in line AA' in FIG. 2A, the step of providing the semiconductor layer sequence 2' can be followed by the application of a mask layer 7' on parts of the second semiconductor layer 5'. The mask layer 7' can have a rotationally symmetrical shape, in particular a circular ring shape, in the region of each semiconductor layer stack to be produced and can be provided with an opening 70' in the region of each semiconductor layer stack to be produced. The mask layer 7' can comprise an electrically insulating, transparent material such as SiO2. The mask layer 7' can be produced by vapor deposition. A part of the mask layer 7' can remain in the finished laser diode component 1 (see Fig. 15B, Fig. 16B, Fig. 17B) and form an insulating layer 7 and thus correspond to the insulating layer in particular with regard to their structure and material composition.

[0069] The step of applying the mask layer 7' may be preceded by a step of passivating an outer surface of the second semiconductor layer 5', which may be carried out by dry etching, for example by reactive ion etching.

[0070] As shown in the schematic plan view of Fig. 3A and the schematic cross-sectional view of Fig. 3B along the same line AA' as in Fig. 2A, the step of applying the mask layer 7' is followed by a step of applying a connection layer structure 8' to parts of the second semiconductor layer 5' for producing at least one connection layer 8 (see Fig. 15B, Fig. 16B, Fig. 17B). For example, the connection layer structure 8' is applied such that it fills the opening(s) 70' of the mask layer 7' and covers an edge of an outer surface of the mask layer 7' facing away from the second semiconductor layer 5', wherein the edge laterally surrounds the opening(s) 70'. "Lateral" means in one or more lateral directions, wherein the one or more lateral directions run parallel to a main extension plane of the semiconductor layer sequence 2' or of the semiconductor layer stack. A first lateral direction L1 and a second lateral direction L2 are in Fig. 3A.

[0071] The connection layer structure 8' has a rotationally symmetrical shape, in particular a circular shape, in the region of each semiconductor layer stack to be produced. The connection layer structure 8' can be formed from a transparent, electrically conductive material such as a TCO (Transparent Conductive Oxide) and / or have a semiconductor tunnel junction. The connection layer structure 8' is provided for producing a connection layer 8 of at least one semiconductor layer stack 2 and can therefore correspond to the connection layer, in particular with regard to its layer structure and / or its material composition (see Fig. 15B, Fig. 16B, Fig. 17B).

[0072] As shown in the schematic plan view of Fig. 4A and the schematic cross-sectional view of Fig. 4B along the same line AA' as in Fig. As shown in Figure 2A, the step of applying the connection layer structure 8' is followed by a step of structuring the semiconductor layer sequence 2' using the mask layer 7' such that the first semiconductor layer 3' has a projecting region 30' in the region of each semiconductor layer stack to be produced, wherein the first semiconductor layer 3' projects laterally beyond the active layer 4' and the second semiconductor layer 5' in the projecting region 30'. The structuring can be carried out by dry etching, for example by reactive ion etching.

[0073] In particular, the second semiconductor layer 5' and the active layer 4' do not protrude laterally beyond the mask layer 7' in the region of the same semiconductor layer stack to be produced. The lateral dimensions can be equal to the lateral dimensions of the corresponding part of the mask layer 7'. Furthermore, a shape of the second semiconductor layer 5' and the active layer 4' can be determined by the mask layer 7'. Thus, the second semiconductor layer 5' and the active layer 4' can have a circular lateral edge.

[0074] As shown in the schematic plan view of Fig. 5A and the schematic cross-sectional view of Fig. 5B along the same line AA' as in Fig. As shown in Figure 2A, the step of structuring the semiconductor layer sequence 2' in the region of the second semiconductor layer 5' and the active layer 4' is followed by a first subsequent structuring step, wherein the first semiconductor layer 3' is structured such that an upper region 35' and a lower region 36' are formed, wherein the lower region 36' is closer to the growth substrate 6' than to the active layer 4' and protrudes laterally beyond the upper region 35', which is closer to the active layer 4' than to the growth substrate 6'. In particular, the upper region 35' is formed with a cut-off corner 35A'. The upper region 35' may comprise the n-doped layer 34', while the lower region 36' may comprise the highly n-doped sacrificial layer 32' and the unintentionally doped layer 33', wherein the sacrificial layer 32' closes off the lower region 36' on a side facing the growth substrate 6'.The structuring of the first subsequent structuring step can be carried out by dry etching, for example by reactive ion etching.

[0075] As shown in the schematic plan view of Fig. 6A and the schematic cross-sectional view of Fig. 6B along the same line AA' as in Fig. As shown in Figure 2A, the first subsequent structuring step is followed by a second subsequent structuring step, in which the lower region 36' is structured such that it no longer protrudes laterally beyond the upper region 35' except at the cut-off corner 35A'. The sacrificial layer 32' is accessible at the cut-off corner 35A'.

[0076] In addition, the lower region 36' is structured such that the growth substrate 6' projects laterally beyond the lower region 36' in a laterally projecting region 60'. The structuring of the second subsequent structuring step can be performed by dry etching, for example, by reactive ion etching.

[0077] As shown in the schematic plan view of Fig. 7A and the schematic cross-sectional view of Fig. 7B along the same line AA' as in Fig. As shown in Figure 2A, after the second subsequent structuring step, a contact layer structure 90' is applied to produce at least one first contact layer 91 and at least one second contact layer 92 (see Fig. 15B, Fig. 16B, Fig. 17B), wherein the contact layer structure 90' is applied to the projecting region(s) 30' of the first semiconductor layer 3' and to the second semiconductor layer 5' such that the contact layer structure 90' laterally surrounds the connection layer structure 8' in the region of each semiconductor layer stack to be produced.

[0078] In particular, a first part 91' of the contact layer structure 90', in the region of each semiconductor layer stack to be produced, which is intended to form a first contact layer 91 in the finished laser diode component, laterally surrounds a second part 92' of the contact layer structure 90', which is arranged in the region of each semiconductor layer stack to be produced and is intended to form a second contact layer 92 in the finished laser diode component. The second part 92' laterally surrounds and partially overlaps a part of the connection layer structure 8' in the region of each semiconductor layer stack to be produced. The first part 91' and the second part 92' are spaced from one another by an annular gap 10'.

[0079] The contact layer structure 90' can be a metallic layer formed from a metal or a metal composition. The contact layer structure 90' can correspond to the first and second contact layers 91, 92, in particular with regard to their layer structure and / or their material composition. Advantageously, the first and second contact layers 91, 92 can be produced in a common step by providing the contact layer structure 90'.

[0080] As shown in the schematic plan view of Fig. 8A and the schematic cross-sectional view of Fig. 8B along the same line AA' as in Fig. 2A, the step of applying the contact layer structure 90' is followed by the application of a first dielectric layer structure 110' onto the semiconductor layer sequence 2' in order to produce a first part 110 of at least one dielectric layer 11 (see Fig. 15B, Fig. 16B, Fig. 17B).

[0081] The first dielectric layer structure 110' may correspond to the first part 110 of the dielectric layer 11 or the dielectric layer 11, in particular with regard to its layer structure and / or its material composition as mentioned above. The first dielectric layer structure 110' may be a multilayer structure comprising at least two sublayers made of different dielectric materials with different refractive indices. Suitable materials for the first dielectric layer structure 110' or the sublayers are dielectric materials such as titanium oxide and silicon dioxide.

[0082] The first dielectric layer structure 110' is provided such that it extends from the growth substrate 6' across outer surfaces 2A', 2C' of the semiconductor layer sequence 2' to the contact layer structure 90', 92' on the second semiconductor layer 5'. While the contact layer structure 90', 92' on the second semiconductor layer 5' is only partially covered, the connection layer structure 8' is completely covered by the first dielectric layer structure 110'.

[0083] The first dielectric layer structure 110' is provided with a first recess 12' in the region of the first part 91' of the contact layer structure 90', which is provided for a first contact layer, and with a second recess 13' in the region of the second part 92' of the contact layer structure 90', which is provided for a second contact layer. While the second recess 13' has the same shape as the second part 92', which can be annular, the first recess 12' deviates from the shape of the first part 91' and has a circular shape. However, it can also be the other way around, with the second recess 13' having a circular shape while the first recess 12' is annular.

[0084] Furthermore, the first dielectric layer structure 110' is provided with an opening 14' at the cut corner 35A' of the upper region 35' in the region of each semiconductor layer stack to be produced.

[0085] The fabrication of the first dielectric layer structure 110' with the recesses 12', 13' and the opening(s) 14' may involve a photolithographic process.

[0086] As shown in the schematic plan view of Fig. 9A and the schematic cross-sectional view of Fig. 9B along the same line AA' as in Fig. 2A, the step of applying the first dielectric layer structure 110' may be followed by an optional step of applying a mirror layer structure 15' to the first dielectric layer structure 110' on a side of the first dielectric layer structure 110' facing away from the connection layer structure 8'. The mirror layer structure 15' may be provided for at least one mirror layer 15 (see Fig. 15B, Fig. 16B, Fig. 17B) and can be a metallic layered structure containing, for example, Al or Ag.

[0087] As shown in the schematic plan view of Fig. 10A and the schematic cross-sectional view of Fig. 10B along the same line AA' as in Fig. 2A, the step of applying the first dielectric layer structure 110' or the optional step of applying a mirror layer structure 15' is followed by the application of a contact column structure 16' to the first dielectric layer structure 110' such that a first contact surface 161A' of at least a first part 161' of the contact column structure 16', which is provided for producing at least one first contact column 161, laterally surrounds a second contact surface 162A' of at least a second part 162' of the contact column structure 16', which is provided for producing at least one second contact column 162 (see Fig. 15B, Fig. 16B, Fig. 17B). The contact column structure 16' extends into the first and second recesses 12', 13' and contacts the contact layer structure 90' there.

[0088] The step of depositing the contact pillar structure 16' may include depositing a seed layer, electroplating a metal layer, e.g., a Ni layer, and depositing a contact pad layer, e.g., Au, wherein the first and second contact pads 161A', 162A' are formed from the same contact pad layer. A photomask may be deposited before depositing the seed layer and removed after depositing the contact pad layer, the photomask imparting the desired shape to the contact pillar structure 16'.

[0089] As shown in the schematic plan view of Fig. 11A and the schematic cross-sectional view of Fig. 11B along the same line AA' as in Fig. As shown in Figure 2A, the step of applying the contact pillar structure 16' is followed by the stripping of the highly doped sacrificial layer 32' by an etchant (see arrows) introduced via the at least one opening 14'. The inventors have found that introducing the etchant from one corner rather than from all sides improves the stripping of the sacrificial layer 32'.

[0090] The stripping may involve an electrochemical etching process. In the electrochemical etching process, the assembly is placed in an acid and an etching voltage is applied. The etching rate can be adjusted by the etching voltage and / or the doping concentration of the sacrificial layer 32'. For example, the etching rate can be increased by increasing the etching voltage and / or the doping concentration of the sacrificial layer 32'.

[0091] Advantageously, the first dielectric layer structure 110' in the laterally projecting region 60' of the growth substrate 6' forms a holding structure that holds the detached part of the semiconductor layer sequence 2' to the growth substrate 6' after the sacrificial layer 32' has been detached. For example, the n-doped current spreading layer 31' can remain on the growth substrate 6'.

[0092] As shown in the schematic plan view of Fig. 12A and the schematic cross-sectional view of Fig. 12B along the same line AA' as in Fig. 2A, the step of detaching the sacrificial layer 32' is followed by a step of applying a carrier structure 17' on a side of the semiconductor layer sequence 2' facing away from the growth substrate 6'. The carrier structure 17' is provided for producing at least one carrier 17 (see Fig. 15B, Fig. 16B, Fig. 17B) and can thus correspond to the carrier 17, in particular with regard to its structure and / or material composition. The carrier structure 17' can comprise a carrier substrate structure 170', from which at least one carrier substrate 170 emerges, and can comprise a first connecting means structure and a second connecting means structure 171', 172', from which a first connecting means 171 and a second connecting means 172 for at least one laser diode component 1 emerge (see Fig. 15B, Fig. 16B, Fig. 17B).

[0093] The carrier structure 17' is connected to the semiconductor layer sequence 2', for example by thermocompression or soldering in a wafer-to-wafer bonding process, wherein the first connecting means structure 171' is connected to a first contact means structure 18', which comprises the at least one first part 91' of the contact layer structure 90' and the at least one first part 161' of the contact column structure 16'. Furthermore, the second connecting means structure 172' is connected to a second contact means structure 19', which comprises the connection layer structure 8', the at least one second part 92' of the contact layer structure 90', and the at least one second part 162' of the contact column structure 16'.

[0094] The first connecting means structure 171' comprises a first connecting surface 171A' in the region of a carrier 17 to be produced and comprises a second connecting surface 172A' in the region of the carrier 17 to be produced. As in Fig. 12A, the first connecting surface 171A' may partially laterally surround the second connecting surface 172A', with a portion of the second connecting surface 172A' extending through the first connecting surface 171A' to an edge of the carrier 17 to be produced. In particular, the shape of the first connecting surface 171A' substantially corresponds to the shape of the first contact surface 161A', and the shape of the second connecting surface 172A' substantially corresponds to the shape of the second contact surface 162A'.

[0095] The carrier substrate structure 170' may be formed from a material that corresponds to the thermal expansion coefficient of the material of the semiconductor layer sequence 2', such as silicon, ceramic or suitable metal materials.

[0096] As shown in the schematic plan view of Fig. 13A and the schematic cross-sectional view of Fig. 13B along the same line AA' as in Fig. As shown in Figure 2A, the growth substrate 6' is removed after the step of applying the carrier structure 17' by detaching (see arrows), for example breaking, the holding structure of the first dielectric layer structure 110'.

[0097] As shown in the cross-sectional view of Fig. 14 along the same line AA' as in Fig. 2A, the step of detaching the growth substrate 6' is followed by the application of a second dielectric layer structure 111' on a side of the semiconductor layer sequence 2' facing away from the carrier structure 17' in order to produce a second part 111 of at least one dielectric layer 11 (see Fig. 15B, Fig. 16B, Fig. 17B). The second dielectric layer structure 111' may correspond to the dielectric layer 11, in particular with regard to its layer structure and / or material composition.

[0098] The step of applying a second dielectric layer structure 111' can be followed by a singulation process in which a plurality of laser diode components 1, as shown in the Fig. 15A to 15C, can be separated from the assembly at a finished stage. Manufacturing in the assembly enables more cost-effective production of the laser diode components 1.

[0099] In connection with the schematic plan view of Fig. 15A, the schematic cross-sectional view of Fig. 15B along line BB' as in Fig. 15A and the schematic cross-sectional view of Fig. 15C along line CC' as in Fig. 15A, an embodiment of a laser diode component 1 is described which is designed according to the method described in connection with the Fig. 1 to 14 described processes.

[0100] The laser diode component 1 is a thin-film VCSEL in flip-chip design.

[0101] The laser diode component 1 comprises a semiconductor layer sequence 2' (see Fig. 1), wherein the semiconductor layer stack 2 comprises a first semiconductor region 3 of a first conductivity type, for example, an n-doped semiconductor region, a second semiconductor region 5 of a second conductivity type, for example, a p-doped semiconductor region, and an active region 4 for emitting laser radiation, wherein the active region 4 is arranged between the first semiconductor region 3 and the second semiconductor region 5 and may comprise a quantum well structure as mentioned above. The first semiconductor region 3 may comprise several layers, such as an unintentionally doped layer 33 formed from the unintentionally doped layer 33', and an n-doped layer 34 formed from the n-doped layer 34' (see Fig. 1). The second semiconductor region 5 may also have a multilayer structure.

[0102] For the semiconductor regions 3, 4, 5 or individual layers of the semiconductor layer stack 2, for example, the above-mentioned materials based on arsenide, phosphide or nitride compound semiconductors are suitable.

[0103] The first semiconductor region 3 has a protruding region 30 in which the first semiconductor region 3 protrudes laterally beyond the active region 4 and the second semiconductor region 5. "Lateral" means in one or more lateral directions such as a first lateral direction L1 or a second lateral direction L2, wherein the one or more lateral directions are parallel to a main extension plane of the semiconductor layer stack 2.

[0104] For example, the second semiconductor region 5 and the active region 4 have a circular lateral edge, while the first semiconductor region 3 has a rectangular lateral edge.

[0105] The laser diode component 1 comprises a dielectric layer 11 covering the semiconductor layer stack 2. The dielectric layer 11 is arranged on opposite surfaces of the semiconductor layer stack 2, and the active region 4 lies therebetween. The dielectric layer 11 comprises a first part 110 consisting of the first dielectric layer structure 110' (see Fig. 8A and Fig. 8B) and covers the semiconductor layer stack 2 on a second main surface 2B facing the carrier 17 as well as on side surfaces 2C that laterally delimit the semiconductor layer stack 2. The dielectric layer 11 comprises a second part 111, which consists of the second dielectric layer structure 111' (see Fig. 14) and covers the semiconductor layer stack 2 on a first main surface 2A facing away from the carrier 17.

[0106] The dielectric layer 11 and its first and second parts 110, 111 can be a multilayer comprising at least two sublayers made of different dielectric materials with different refractive indices. Suitable materials for the dielectric layer or sublayers are dielectric materials such as titanium oxide and silicon dioxide.

[0107] The dielectric layer 11 forms a laser resonator of the laser diode component 1. In particular, the first part 110 and the second part 111, which are arranged on opposite sides of the active region 4, are DBR mirrors (DBR: Distributed Bragg Reflector) that form a vertical laser resonator, wherein the laser radiation is emitted in a vertical direction V and leaves the laser diode component 1 on a radiation exit side, which is a front side 1A arranged on the side of the first main surface 2A. The vertical direction V can run perpendicular to the main extension plane. The dielectric layer 11 enables wide stopbands and higher reflectivities, for example, over 99%, than semiconductor resonators.

[0108] The removal of the growth substrate 6' (see Fig. 13, Fig. 14) has the advantage that the laser resonator can be formed exclusively from the dielectric layer 11. Furthermore, by detaching the growth substrate 6', a thickness of the semiconductor layer stack 2 can be optimized to form an optical resonator between the first and second parts 110, 111. The laser diode component 1, in which the growth substrate 6' has been detached or at least thinned, represents a thin-film device.

[0109] The laser diode component 1 comprises a first contact means 18 for electrically contacting the first semiconductor region 3 and a second contact means 19 for electrically contacting the second semiconductor region 5 (see Fig. 15C).

[0110] The first contact means 18 comprises a first contact layer 91, which covers the protruding region 30 of the first semiconductor region 3. The first contact layer 91 is formed from the contact layer structure 90' (see Fig. 7A, Fig. 7B) and may be a metallic layer formed from a metal or a metal composition.

[0111] The first contact means 18 further comprises a first contact column 161, which is arranged on a side of the first contact layer 91 facing away from the first semiconductor region 3. The first contact column 161 is formed from the contact column structure 16' (see Fig. 10, Fig. 10B) and may be a multilayer metal layer formed from one or more metals or metal compositions. The first contact pillar 161 comprises, for example, a metal layer made of Ni, for example, and a first contact area 161A containing Au, for example. The first contact pillar 161 may be thicker than the first contact layer 91. The metal layer of the first contact pillar 161 may have a thickness d between 5 and 100 µm, preferably between 10 and 50 µm, particularly preferably between 20 and 30 µm.

[0112] The second contact means 19 comprises a connection layer 8, which partially covers the second semiconductor region 5 and is arranged in the vertical direction V between the dielectric layer 11 and the second semiconductor region 5. The connection layer 8 has a rotationally symmetrical shape with respect to a central axis A of the laser diode component 1, for example, a circular or annular shape.

[0113] The connection layer 8 is formed, for example, from a TCO (Transparent Conductive Oxide) and / or comprises a semiconductor tunnel junction. The connection layer 8 is designed to have low optical absorption. Therefore, the laser radiation emitted from the active zone 4 toward the connection layer 8 can pass through the connection layer 8 and be reflected by the highly reflective dielectric layer 11.

[0114] The second contact means 19 comprises a second contact layer 92, which laterally surrounds the connection layer 8 at the second semiconductor region 5 and partially laterally overlaps therewith and electrically contacts the connection layer 8. The second contact layer 92 is formed from the contact layer structure 90' (see Fig. 7A, Fig. 7B) and may be a metallic layer formed from a metal or a metal composition.

[0115] Furthermore, the second contact means 19 comprises a second contact column 162, which is arranged on a side of the second contact layer 92 facing away from the second semiconductor region 5. The second contact column 162 is formed from the contact column structure 16' (see Fig. 10, Fig. 10B) and may be a multilayer metal layer formed from one or more metals or metal compositions. For example, the second contact pillar 162 may include a Ni layer and a second contact pad 162A containing, for example, Au. The second contact pillar 162 may be thicker than the second contact layer 92.

[0116] The first contact column 161 laterally surrounds the second contact column 162. It is possible that the first contact column 161 may not completely laterally surround the second contact column 162. The first and second contact columns 161, 162 electrically contact the respective contact layers 91, 92 and are suitable for heat dissipation during operation.

[0117] The dielectric layer 11 comprises a first recess 12 and a second recess 13, and the first contact means 18, in particular the first contact column 161, is partially arranged in the first recess 12, and the second contact means 19, in particular the second contact column 162, is partially arranged in the second recess 13. Furthermore, the dielectric layer has an opening 14 on a side surface of the semiconductor layer stack 2. In particular, the opening 14 is located in the region of a cut-off corner 35A (see Fig. 15C) and is based on the information provided in connection with Fig. 10A mentioned cut corner 35A'.

[0118] The first contact surface 161A of the first contact column 161 laterally surrounds the second contact surface 162A of the second contact column 162. The second contact surface 162A has a rotationally symmetrical shape with respect to the central axis A of the laser diode component 1. The second contact surface 162A has a circular shape. Furthermore, the first contact surface 161A has a circular inner edge facing the second contact surface 162A and a substantially rectangular outer edge facing away from the second contact surface 162A, wherein one corner of the outer edge is cut off (see Fig. 10A and cut corner 35A in Fig. 15C).

[0119] The rotationally symmetric design of the contact surfaces ensures a high level of robustness of the laser diode component 1.

[0120] The first contact column 161 and the second contact column 162 are spaced apart from one another by a separation trench 20. The separation trench 20 has, for example, a rotationally symmetrical shape with respect to the central axis A of the laser diode component 1. The separation trench 20 can have the shape of a circular ring (see Fig. 10A). Advantageously, the rotationally symmetrical shape of the separation trench 20 helps to compensate for the thermomechanical stress and thus reduce the risk of damage.

[0121] The first contact area 161A and the second contact area 162A are arranged in a common contact plane, wherein the common contact plane is arranged on a side of the active region 4 that is opposite the radiation exit side 1A of the laser diode component 1. The laser diode component 1 is thus designed as a flip-chip.

[0122] The laser diode component 1 comprises an insulating layer 7, wherein the insulating layer 7 partially covers the second semiconductor region 5 and has an opening 70 in which the connection layer 8 is arranged and contacts the second semiconductor region 5. The second semiconductor region 5 and the active region 4 do not protrude laterally beyond the insulating layer 7. In particular, a lateral extent and shape of the second semiconductor region 5 and the active region 4 are determined by the insulating layer 7.

[0123] In the vertical direction V, the insulating layer 7 is arranged between the second contact layer 92 and the second semiconductor region 5. The insulating layer 7 has the shape of a circular ring.

[0124] During operation, the insulating layer 7 can serve as a current confinement layer for laterally limiting a current flow through the semiconductor layer stack 2. The insulating layer 7 is formed, for example, from the mask layer 7' (see Fig. 2B) and may comprise a transparent, electrically insulating material such as SiO2.

[0125] Optionally, the laser diode component 1 comprises a mirror layer 15, which may be metallic and may contain, for example, Al or Ag. The mirror layer 15 is arranged on a side of the dielectric layer 11 facing away from the connection layer and laterally overlaps the connection layer 8. The mirror layer 15 can increase the reflectivity.

[0126] The laser diode component 1 comprises a carrier 17 with a first connecting means 171 and a second connecting means 172, wherein a first connecting surface 171A of the first connecting means 171 is connected to the first contact surface 161A of the first contact means 18 and a second connecting surface 172A of the second connecting means 172 is connected to the second contact surface 162A of the second contact means 19.

[0127] The laser diode component 1 comprises a first component electrode 171B and a second component electrode 172B for electrically contacting the laser diode component 1 from the outside, wherein the first component electrode 171B is part of the first connecting means 171 and the second component electrode 172B is part of the second connecting means 172.

[0128] The first connecting surface 171A partially surrounds the second connecting surface 172A laterally, as described in connection with Fig. 12A. In particular, the shape of the first connection surface 171A substantially corresponds to the shape of the first contact surface 161A with the exception of the interruption in the region of a second component electrode 172B, which may be missing in the first contact surface 161A (see Fig. 11A). In addition, the shape of the second connection surface 172A substantially corresponds to the shape of the second contact surface 162A.

[0129] The carrier 17 comprises a carrier substrate 170 made of a material that corresponds to the thermal expansion coefficient of the material of the semiconductor layer stack 2, such as silicon, ceramic, or suitable metal materials. The first connection surface 171A and the second connection surface 172A are arranged on a side of the carrier substrate 170 facing the semiconductor layer stack 2. An insulation layer 173 can be arranged between the carrier substrate 170 and the connecting means 171, 172 if the carrier substrate 170 is electrically conductive.

[0130] The semiconductor layer stack 2 is arranged on the carrier 17 such that the second semiconductor region 5 faces the carrier 17. The carrier 17 is arranged on a rear side 1B of the laser diode component 1, facing away from the radiation exit side 1A. The component electrodes 171B, 172B are arranged on opposite side surfaces of the laser diode component 1.

[0131] In connection with the schematic plan view of Fig. 16A and the schematic cross-sectional view of Fig. 16B along the same line CC' as in Fig. 15A, a further embodiment of a laser diode component 1 is described, which is designed according to the method described in connection with the Fig. 1 to 14 described processes.

[0132] The carrier 17 comprises an electrically conductive substrate 170, which provides an electrical connection between the second connection surface 172A and the second component electrode 172B, which is arranged on a side of the carrier substrate 170 facing away from the semiconductor layer stack 2. In this exemplary embodiment, the second contact surface 162A and the second connection surface 172A can have an identical circular shape. The first contact surface 161A and the first connection surface 171A can have an identical annular shape. The first component electrode 171B is arranged on a side surface of the laser diode component 1, while the second component electrode 172B is arranged on the rear side 1B.

[0133] Furthermore, the laser diode component 1 can have all the features, properties and advantages mentioned in connection with the further embodiments.

[0134] In connection with the schematic plan view of Fig. 17A and the schematic cross-sectional view of Fig. 17B along the same line CC' as in Fig. 15A, a further embodiment of a laser diode component 1 is described, which is designed according to the method described in connection with the Fig. 1 to 14 described processes.

[0135] The first connecting means 171 comprises a first electrically conductive via 171C, which extends through the carrier substrate 170 and provides an electrical connection between the first connecting surface 171A and the first component electrode 171B, which is arranged on a side of the carrier substrate 170 facing away from the semiconductor layer stack 2. Furthermore, the second connecting means 172 comprises a second electrically conductive via 172C, which extends through the carrier substrate 170 and provides an electrical connection between the second connecting surface 172A and the second component electrode 172B, which is arranged on a side of the carrier substrate 170 facing away from the semiconductor layer stack 2.

[0136] In this embodiment, the second contact surface 162A and the second connection surface 172A may have an identical circular shape. The first contact surface 161A and the first connection surface 171A may have an identical annular shape.

[0137] The first device electrode 171B and the second device electrode 172B are arranged on the back side 1B.

[0138] Furthermore, the laser diode component 1 can have all the features, properties and advantages mentioned in connection with the further embodiments.

[0139] The scope of the invention is not limited to the examples mentioned above. The invention is embodied by any novel feature and any combination of features, in particular by any combination of the features recited in the claims, even if that feature or combination of features is not expressly recited in the claims or in the examples.

[0140] This patent application claims priority from German patent application 102022131374.3, the disclosure of which is hereby incorporated by reference. List of reference symbols 1 laser diode component 1A Front, radiation exit side 1B back 2 semiconductor layer stacks 2A first main area 2B second main area 2C side surface 3 first semiconductor area 4 active area 5 second semiconductor area 7 Insulating layer 8 Connection layer 11 dielectric layer 12 first recess 13 second recess 14 Opening 15 mirror layer 17 carriers 18 first contact agent 19 second contact agent 20 dividing ditch 30 protruding area of the first semiconductor region 33 unintentionally doped layer 34 n-doped layer 35A cut corner 70 opening 91 first contact layer 92 second contact layer 110 first part of the dielectric layer 111 second part of the dielectric layer 161 first contact column 161A first contact surface 162 second contact column 162A second contact surface 170 carrier substrate 171 first connecting means 171A first connecting surface 171B first component electrode 171C first via 172 second connecting means 172A second connecting surface 172B second component electrode 172C second via 173 Insulation layer 2' semiconductor layer sequence 2A', 2C' outer surface 3' first semiconductor layer 4' active layer 5' second semiconductor layer 6' growth substrate 7' mask layer 8' connection layer structure 10' gap 12' first recess 13' second recess 14' opening 15' mirror layer structure 16' contact column structure 17' support structure 18' first contact structure 19' second contact structure 30' protruding area of the first semiconductor layer 31' n-doped current spreading layer 32' highly n-doped sacrificial layer 33' unintentionally doped layer 34' n-doped layer 35' upper area 35A' cut corner 36' lower area 60' laterally protruding area of the growth substrate 70' opening 90' contact layer structure 91' first part 92' second part 110' first dielectric layer structure 111' second dielectric layer structure 161' first part 161A' first contact surface 162' second part 162A' second contact surface 170' carrier substrate structure 171' first lanyard structure 171A' first connecting surface 172' second lanyard structure 172A' second connecting surface d thickness A central axis L1 first lateral direction L2 second lateral direction V vertical direction QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 102022131374.3

[0140]

Claims

[1] Laser diode component (1) comprising - a semiconductor layer stack (2) comprising: - a first semiconductor region (3), - a second semiconductor region (5) and - an active region (4) for emitting laser radiation, wherein the active region (4) is arranged between the first semiconductor region (3) and the second semiconductor region (5), and wherein the first semiconductor region (3) has a projecting region (30) in which the first semiconductor region (3) projects laterally beyond the active region (4) and the second semiconductor region (5), - a dielectric layer (11) covering the semiconductor layer stack (2), - a first contact means (18) for electrically contacting the first semiconductor region (3), comprising: - a first contact layer (91) covering the protruding region (30) of the first semiconductor region (3), and - a first contact column (161) arranged on a side of the first contact layer (91) facing away from the first semiconductor region (3), - a second contact means (19) for electrically contacting the second semiconductor region (5), comprising: - a connection layer (8) partially covering the second semiconductor region (5), - a second contact layer (92) laterally surrounding the connection layer (8), and - a second contact column (162) arranged on a side of the second contact layer (92) facing away from the second semiconductor region (5), wherein a first contact surface (161A) of the first contact column (161) laterally surrounds a second contact surface (162A) of the second contact column (162). [2] Laser diode component (1) according to the preceding claim, wherein a separation trench (20) between the first contact column (161) and the second contact column (162) has the shape of a circular ring. [3] Laser diode component according to one of the preceding claims, wherein the first contact surface (161A) and the second contact surface (162A) each have a rotationally symmetrical shape with respect to a central axis (A) of the laser diode component (1). [4] Laser diode component (1) according to one of the preceding claims, wherein the second contact layer (92) and the connection layer (8) each have a rotationally symmetrical shape with respect to a central axis (A) of the laser diode component (1). [5] Laser diode component (1) according to one of the preceding claims, comprising an insulating layer (7), wherein the insulating layer (7) partially covers the second semiconductor region (5) and has an opening (70) in which the connection layer (8) is arranged and contacts the second semiconductor region (5). [6] Laser diode component (1) according to the preceding claim, wherein the second semiconductor region (5) and the active region (4) do not project laterally beyond the insulating layer (7). [7] Laser diode component (1) according to one of the preceding claims, wherein the dielectric layer (11) is arranged at least partially on all outer surfaces (2A, 2B, 2C) of the semiconductor layer stack (2). [8] Laser diode component (1) according to one of the preceding claims, wherein the dielectric layer (11) forms a laser resonator of the laser diode component (1). [9] Laser diode component (1) according to one of the preceding claims, wherein the dielectric layer (11) has an opening (14) on a side surface (2C) of the semiconductor layer stack (2). [10] Laser diode component (1) according to one of the preceding claims, which has a carrier (17) comprising a first connecting means (171) and a second connecting means (172), wherein a first connecting surface (171A) of the first connecting means (171) is connected to the first contact surface (161A) of the first contact means (18) and a second connecting surface (172A) of the second connecting means (172) is connected to the second contact surface (162A) of the second contact means (19), wherein the first connecting surface (171A) at least partially laterally surrounds the second connecting surface (172A). [11] Laser diode component (1) according to the preceding claim, wherein the semiconductor layer stack (2) is arranged on the carrier (17) such that the second semiconductor region (5) faces the carrier (17). [12] Laser diode component (1) according to one of the two preceding claims, which comprises a first component electrode (171B) and a second component electrode (172B) for electrically contacting the laser diode component (1) from the outside, wherein the first component electrode (171B) is part of the first connecting means (171) and the second component electrode (172B) is part of the second connecting means (172). [13] Laser diode component (1) according to one of claims 10 to 12, wherein the laser radiation is emitted mainly on a front side (1A) of the laser diode component (1) facing away from the carrier (17). [14] Laser diode component (1) according to one of the preceding claims, wherein the semiconductor layer stack (2) is substantially free of a growth substrate (6'). [15] A method for producing a laser diode component (1) according to any one of the preceding claims, the method comprising: - Providing a semiconductor layer sequence (2') for producing at least one semiconductor layer stack (2), wherein the semiconductor layer sequence (2') comprises: - a first semiconductor layer (3'), - a second semiconductor layer (5') and - an active layer (4') for emitting laser radiation, wherein the active layer (4') is arranged between the first semiconductor layer (3') and the second semiconductor layer (5'), - applying a mask layer (7') to parts of the second semiconductor layer (5'), - applying a connection layer structure (8') to parts of the second semiconductor layer (5') to produce at least one connection layer (8), - Structuring the semiconductor layer sequence (2') by means of the mask layer (7') such that the first semiconductor layer (3') has at least one projecting region (30') in which the first semiconductor layer (3') projects laterally beyond the active layer (4') and the second semiconductor layer (5'), - applying a contact layer structure (90') for producing at least one first contact layer (91) and at least one second contact layer (92) to the at least one projecting region (30') of the first semiconductor layer (3') and to the second semiconductor layer (5') such that the contact layer structure (90') laterally surrounds the connection layer structure (8'), - applying a first dielectric layer structure (110') to the semiconductor layer sequence (2') in order to produce a first part (110) of at least one dielectric layer (11), - Applying a contact column structure (16') to the first dielectric layer structure (110') such that a first contact surface (161A) of at least a first part (161') of the contact column structure (16'), which is provided for producing at least one first contact column (161), laterally surrounds a second contact surface (162A) of at least a second part (162') of the contact column structure (16'), which is provided for producing at least one second contact column (162). [16] Method according to the preceding claim, wherein - the semiconductor layer sequence (2') is provided on a growth substrate (6') and comprises a highly doped sacrificial layer (32') facing the growth substrate (6'), - in a first subsequent structuring step following the structuring of the second semiconductor layer (5') and the active layer (4'), the first semiconductor layer (3') is structured such that an upper region (35') and a lower region (36') are formed, wherein the highly doped sacrificial layer (32') closes off the lower region (36') on a side facing the growth substrate (6'), and - in a second subsequent step, the lower region (36') is structured such that the growth substrate (6') projects laterally beyond the lower region (36') in a laterally projecting region (60'). [17] Method according to the preceding claim, comprising: - providing the first dielectric layer structure (110') such that it covers the laterally projecting region (60') of the growth substrate (6') and has an opening (14') at a cut-off corner (35A') of the upper region (35'), and - removing the highly doped sacrificial layer (32') by an etchant introduced via the at least one opening (14'), where the first dielectric layer structure (110') in the laterally projecting region (60') of the growth substrate (6') forms a holding structure which holds the semiconductor layer sequence (2') to the growth substrate (6') after the sacrificial layer (32') has been detached. [18] Method according to the preceding claim, comprising: - applying a carrier structure (17') on a side of the semiconductor layer sequence (2') facing away from the growth substrate (6') and - Detaching the growth substrate (6') by releasing the holding structure. [19] Method according to the preceding claim, comprising: Applying a second dielectric layer structure (111') on a side of the semiconductor layer sequence (2') facing away from the carrier structure (17') in order to produce a second part (111) of the at least one dielectric layer (11).

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