Hybrid battery system with a continuous power source

Abstract

A semiconductor-based battery system comprising a primary battery that spontaneously provides energy, which in some embodiments slowly charges a secondary battery. The battery draws energy from the environment in the form of heat. The primary battery is powered by internal blackbody radiation, which cools a microplatform and provides thermoelectric energy at all temperatures above absolute zero, with the available energy increasing with temperature. The lifetime of the primary battery is not limited by electrochemical degradation over time. In some embodiments, the primary battery directly powers an application device without a secondary battery.

Description

Field of invention

[0001] The present invention relates generally to a semiconductor-based, continuously-powered primary battery (CPB). Background of the invention

[0002] The present invention comprises a micromachined 3D MEMS structure based on a deep-submicron foundry (DSO) fabrication technology. The micromachined MEMS structure includes nanowires exhibiting a phononic MEMS structure with extremely low thermal conductivity. In this invention, a microplatform suspended by thermally insulating nanowires is positioned within a pixel, wherein the primary heat energy transport influencing the platform's temperature is Planckian blackbody radiation. In the present invention, the suspended microplatform is structured to maximize the spontaneous blackbody radiation intensity from the platform surface. The heat radiated by the platform is terminated outside the platform, and the platform is passively cooled.

[0003] A Seebeck thermoelectric element within each pixel detects the resulting temperature difference between the platform and the surrounding warmer heat sink to provide an electrical energy source. The platform and the nanowires comprise a thermocouple with at least one pair located within the platform and another pair located externally and maintained at the temperature of the heat sink. In the present invention, the thermocouple voltage from a plurality of interconnected pixels is amplified to a level that can power an application device, such as a hearing aid.

[0004] Stefan and Ludwig Boltzmann (c. 1879-1804) derived a detailed equation known as Boltzmann's law, which shows that the thermal radiation power of any surface increases with the fourth power of the temperature (T). 4) relative to absolute zero (-273 °C). More recently, in 1899, M. Planck explained the Boltzmann equation with reference to quantum theory, thus laying the foundation for modern quantum physics.

[0005] The specific physical technology supporting the present invention is based on micromechanical and microengineering technology, better known as MEMS (micro-electromechanical system). MEMS has important applications in a wide range of micro / nano device technologies, including the 3D nano / micro devices of the present invention. The first modern MEMS device was described by H. Nathanson and R. Wickstrom in U.S. Patent 3,413,573, granted in 1968, as a resonant cantilever device comprising an actuated microcantilever that modulates the transconductance of a MOSFET transistor.

[0006] Another actuated MEMS device with an SPST switch is actuated by an out-of-plane thermal semiconductor microheater actuated by an external heat source. This was disclosed by W. Carr and XQ Sun in US patent 5,796,152, granted in 1998.

[0007] A MEMS device with bimorphic arms and an actuation system comprising an external blackbody infrared source was disclosed by M. Rinaldi et al. in US Patent 10,643,810, granted in 2020. The actuation is based on the heat absorbed in a bimorphic arm, with the heat source being the external blackbody infrared emitter.

[0008] In 2022, the prior art disclosing a MEMS microplatform within a Seebeck thermocouple, cooled by the spontaneous blackbody radiation of the MEMS platform, was based on a thermostatic phononic structure providing extreme thermal insulation for the microplatform. This disclosure was made in three US patents granted in 2022: 11,231,382, 11,300,453, and 11,381,761, which were published in 2022 and name W. Carr as the inventor. Each of these three patents discloses a thermopile infrared detector in which a Seebeck thermoelectric voltage is generated when the platform is spontaneously cooled by its own blackbody radiation. These patents are disclosed as an infrared detector, with the detector structure, comprising a spontaneously cooled platform, acting as the primary battery.

[0009] The extreme thermal insulation of a platform with a phononic MEMS structure is fundamental to the invention. A first patent disclosing a phononic MEMS device with a phononic MEMS structure was granted to W. Carr on April 14, 2015, under US Patent No. 9,006,57.

[0010] The potential of a micro-platform to self-cool through spontaneous blackbody radiation is determined by the radiative power P. BB limited, which is issued by an issuing platform. Fig. Figure 1 is a diagram of blackbody radiation from a surface with an emissivity ε = 1 as a function of temperatures near room temperature based on the Boltzmann law of blackbody radiation intensity. Fig. Figure 1 shows the maximum broadband infrared power available from blackbody radiation for conversion into electrical energy within a primary battery comprising Seebeck thermocouples connected to a spontaneously cooled platform.

[0011] The prior art described above does not disclose a semiconductor-based primary battery integrally configured with a secondary battery, wherein the primary battery, which has a phononic MEMS structure, supplies a trickle charge current to a secondary battery. The primary battery power is derived from the internal spontaneous blackbody radiation or blackbody radiance. A system incorporating a semiconductor-based primary battery within an application system can offer a significant improvement over the prior art for small battery sources, in addition to a virtually unlimited primary battery lifetime. Summary

[0012] The present invention comprises a hybrid battery system (HBS) in which an arrangement, in particular a regular arrangement of semiconductor pixels, is configured to provide a primary battery, which is packaged together with a secondary battery. The primary battery comprises an arrangement, in particular a regular arrangement of planar platforms suspended by phononic nanowires in a hermetic cavity. Each platform is cooled by spontaneous blackbody radiation, referred to as "first radiation," emitted from one or more of its surfaces. The platform is configured to enhance the first radiation.

[0013] The surfaces of the cavity walls surrounding the platform are exposed to the first radiation, which cools the platform. The cavity walls are configured to reduce blackbody radiation, referred to as "second radiation," which heats the platform. The cavity walls are configured to maximize the absorption of the first radiation and minimize the second radiation.

[0014] The phononic nanowires comprise a phononic MEMS structure including a phononic crystal metamaterial (PnC) and / or randomly arranged phonon scattering structures, thereby reducing the thermal conductivity of the nanowires. The phononic MEMS structures consist of crystalline or polycrystalline semiconductors, with the structural elements physically separated by less than the mean free path (mfp) of at least some thermally conductive phonons. The phononic MEMS structure is configured to increase the electrical conductivity to thermal conductivity ratio within the phononic nanowires.

[0015] Each platform within the arrangement, together with its connecting nanowires, includes a Seebeck thermocouple within an electrical circuit. In some embodiments, the thermoelectric source supplies a trickle charge current to the secondary battery. In other embodiments, a voltage regulator maintains a constant voltage for a trickle charge current to the secondary battery and the power supply of an application device.

[0016] The phononic crystal (PnC) is structured with an ordered arrangement of PnC structural sites or PnC structural elements to provide a phononic band gap, which is a type of resonance structure. In other embodiments, the structural elements are randomly arranged on the nanowire surfaces, the volume or bulk, or at the edges.

[0017] The phononic MEMS structure comprises a semiconductor selected from the group which includes, without restriction, silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride and organic semiconductors.

[0018] The phononic MEMS structure includes, without limitation, holes, vias, pillars, surface spots, a field of nanowires, cones, cavities, depressions, surface particles, roughened edges, implanted molecule types, porous structures and molecular aggregates arranged in a periodic or random format.

[0019] In embodiments, a nanowire can be adapted to include a thin metal film that provides increased electrical conductivity and / or static positioning of the nanowires.

[0020] In embodiments, a nanowire can be adapted to include a layer of dielectric material that provides electrical insulation between nanowire layers and / or static positioning of the nanowires.

[0021] A flat surface of the platform can, without restriction, include carbon nanotubes (CNTs), graphene, black silicon, soot or black gold, also known as black gold or gold black, which offer a high emissivity for first radiation within a broad wavelength range.

[0022] The cavity walls are configured to reduce wall reflection and increase the absorption of the first radiation incident from the platform.

[0023] In embodiments, the cavity walls comprise resonance structures that provide absorption of the first radiation with reduced second radiation over a broad infrared wavelength range.

[0024] The cavity is maintained in a vacuum or backfilled with a gas of low thermal conductivity such as Ar, Xe, or Kr, thereby increasing the thermal insulation for the platform. In embodiments, the cavity includes a getter material to maintain a low-pressure environment within the cavity.

[0025] The pixels within the primary battery array are connected in a parallel / series combination circuit to provide a voltage suitable for trickle charging the secondary battery.

[0026] In embodiments, the primary battery is formed from a multilayer sandwich of semiconductor wafers interconnected to define a plurality of cavities within each lateral plane. Each wafer is configured with a structure to control a portion of the spontaneous blackbody radiation within each cavity.

[0027] In some embodiments, a voltage regulator is connected between the primary and secondary batteries to limit the full charge voltage in the secondary battery.

[0028] The secondary battery comprises one or more types, including but not limited to lithium-ion, lithium-polymer, lead-acid, NiCd (nickel-cadmium) and nickel-metal hydride types.

[0029] In some applications, a large-capacity capacitor can replace the secondary battery for low-duty-cycle application devices where higher power is only required temporarily.

[0030] The platform has a planar structure and is characterized by edge dimensions ranging from 250 nanometers to several millimeters. The phononic nanowires are characterized by a thickness ranging from 10 nanometers to approximately 1 millimeter.

[0031] The primary battery enables operation in an environment with ambient temperatures up to 1500 °C, with the battery comprising a high-temperature semiconductor such as SiC (silicon carbide) or GaN (galium nitride).

[0032] The primary battery is manufactured in a semiconductor factory, also known as a semiconductor foundry, using standard wafer processing tools. The most readily available tools for manufacturing primary batteries are those designed for silicon wafers. Brief description of the drawings Fig. Figure 1 is a diagram of the blackbody power emitted by a surface with an emittance ε = 1.0 within a limited wavelength range as a function of the ambient temperature. Fig. Figure 2A shows a top view of a phononic nanowire comprising a phononic crystal (PnC) structure. Fig. Figure 2B shows a top view of a phononic nanowire featuring random phonon scattering elements. Fig. Figure 3A shows a cross-sectional view of a nanowire incorporating a PnC structure. Fig. Figure 3B shows a cross-sectional view of a nanowire with a thin metal or conduction layer covering the phononic layer. Fig. 3C shows a cross-sectional view of a nanowire that has a dielectric and a conductive layer covering the phononic layer. Fig. Figure 4A shows a top view of a platform supported by two nanowires. Fig. Figure 4B shows a top view of a platform supported by four nanowires. Fig. Figure 5 shows a top view of the platform and an adjacent cavity wall with blackbody radiation from both. Fig. Figure 6 shows a cross-section of a primary battery pixel with an ornate semiconductor shutter on the top, forming a hermetic cavity. Fig. Figure 7 shows a cross-section of a primary battery pixel with decorated semiconductors on the top and bottom surfaces forming a hermetic cavity, with both cavity walls actively absorbing radiation from the platform. Fig. 8A and Fig. Figure 8B shows resonance structures located within both cavity walls, providing broadband, low-emissivity absorption for the radiation emitted by the platform. Fig. Figure 9 is a circuit illustrating a parallel / series connection of the platform within an arrangement in the primary battery. Fig. Figure 10 is a schematic diagram representing the HBS associated with an application device. Fig. Figure 11 is a schematic diagram showing the HBS without a secondary battery. Detailed description

[0033] Definitions: The following terms are expressly defined for use in this disclosure and the accompanying claims: • A “primary battery” is a galvanic cell designed to supply a maintenance charging current to an electrical load for a virtually unlimited period of time. • A “secondary battery” is a galvanic cell that can be electrically recharged to its original state before discharge after use by passing current through the cell in the opposite direction to the discharge current. • “Radiation intensity or radiance” and “radiation” mean the broadband photonic blackbody flux density emitted from, incident upon, or absorbed by a surface. • “Thermoelectric device” means a semiconductor Seebeck junction device for converting heat energy into electrical energy. • “Blackbody radiation” means spontaneous thermal electromagnetic radiation within or around a body that is in thermodynamic equilibrium with its surroundings. • “LED” means light-emitting diode, which includes a semiconductor pn junction. • “LEP” means a light-emitting platform that includes a heated blackbody radiator. • “Surface plasmonic polariton” (SPP for Surface plasmonic polariton) means an electromagnetic, waveguide-guided surface field along a metamaterial-patterned surface that has sufficient electrical conductivity to support the associated electron movement. • “Phononic nanowire” means a suspended nanowire that includes phononic resonant or non-resonant elements that reduce thermal conductivity. • “Phonon crystal” or PnC means a specific metamaterial that has a periodic nanostructure which reduces the transport of thermal energy of phonons. • “MEMS” stands for microelectromechanical system, which has 3D-structured components that are usually manufactured from semiconductor wafers using integrated circuit manufacturing tools. • An “RFID receiver” or “RFID tag” is a remotely controlled device where the control of the application device is carried out via a control signal sent from a remote query device.

[0034] The nanowires incorporate a phononic MEMS structure to reduce thermal conductivity. This reduction is achieved by constructing a Brillouin zone to form a phononic crystal (PnC) or randomly arranged scattered structure elements. The effectiveness of physical decorations in the nanowires for reducing thermal conductivity is based on the duality principle of quantum mechanics, which states that a phonon at the nanoscale can exhibit both wave-like and particle-like properties. The fundamental phononic MEMS structure features a crystalline or polycrystalline semiconductor, with the structure elements physically separated by less than the mean free path (mfp) of at least some thermally conducting phonons.

[0035] Fig. Figure 2A shows a top view of a phononic nanowire 201 comprising PnC with a "porous" structure 203. The PnC features a phononic band gap that acts as a barrier to thermally conductive phonons moving along the length of the nanowire. An example of PnC structures that reduce the thermal conductivity of a thin-film semiconductor can be found in S. Mohammadi et al., Appl. Phys. Lett., Vol. 92, 221905 (2008). The PnC structuring of the Brillouin zone restricts phonon transport and increases the thermal insulation of the platform.

[0036] The phononic MEMS structure comprises a crystalline or polycrystalline semiconductor, with the structural elements physically separated by less than the mean free path (mfp) of at least some thermally conductive phonons. The phononic MEMS structure primarily features a semiconductor selected without restriction from the group including silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride, and organic semiconductors.

[0037] Fig. Figure 2B shows a top view of a phononic nanowire 202 consisting of random phonon scattering elements 204, 205.

[0038] The phononic MEMS structure in the Fig. 2A and Fig. 2B can include, without limitation, holes, passages, pillars, surface spots, plugs or studs, cavities, depressions, surface particles, roughened edges, implanted molecular types, porous structures, and molecular aggregates. The phononic structure within the semiconductor nanowires increases the ratio of electrical conductivity to thermal conductivity.

[0039] Fig. Figure 3A shows a cross-section of a nanowire with a “perforated” PnC structure 203. Fig. Figure 3B shows a cross-section of a nanowire with a thin metal or other electrically conductive layer 307 covering the phononic layer 201. This film increases the electrical conductivity of the nanowire. Fig. Figure 3C shows a cross-section of a nanowire featuring a dielectric layer 308 and a conductive layer 307 covering the thicker phononic layer 201. The dielectric layer provides electrical insulation between the metal and phononic MEMS layers of the nanowire and / or static mechanical stress control, which influences the vertical static positioning of the platform.

[0040] The Fig. 4A and Fig. Figure 4B shows a top view of a pixel comprising a platform 402 suspended by nanowires 405 from a surrounding support structure 401 above a cavity 403. The platforms comprise one or two thermocouples, each thermocouple comprising a pair arranged on the platform and two nanowires attached to the surrounding structure 401. The Fig. 4A and Fig. The platforms shown in 4B each comprise one or two pairs. Each nanowire includes a heavily doped p + or n - Semiconductors are part of each thermocouple and also serve as physical support for the solved platforms 402. Each nanowire 407 is attached at one end to contact surfaces 404, which establish an electrical connection with the Seebeck pairs.

[0041] The platform and the nanowires within each pixel of the Fig. 4A and Fig. 4B are removed from an underlying platform during the manufacturing process by chemical etching, thus providing thermal insulation for each platform.

[0042] Fig. Figure 5 shows a top view of an isothermal platform comprising a substrate 501 and a surface structure 507, which is structured to provide maximum first blackbody radiation over a wide bandwidth. The platform is held by nanowires 502 within a cavity suspended from a surrounding pixel wafer structure. A top-linked wafer 503 has a second surface structure 505 comprising a patterned metal layer 506 and a dielectric layer 505, which is arranged on the top of the wafer structure 504. The top-side wafer 503 is configured to minimize second radiation or reflection directed onto the platform.

[0043] The platform is cooled by the first radiation and heated by every second radiation or reflection from the top of the wafer. The thermal bidirectional energy transfer, encompassing the first and second heat flows, is shown within beam 508. One design goal is to maximize the first radiation and minimize any heat transfer from the surface 505. In an ideal design, the thermal photonic energy transfer 508 from the platform, configured with a surface 507 having an infrared emissivity of 1.0, is unidirectional, thus achieving maximum cooling of the isothermal platform.

[0044] In Fig. 5. The platform structure comprises one or more pairs or thermocouples (not shown) that sense the temperature difference between the platform and the supporting or carrier substrate, which is a heat sink, typically at room temperature. A Seebeck voltage is generated in each pixel, proportional to the temperature difference between the platform pair(s) and the surrounding substrate heat sink. In a typical application, multiple platforms are connected in a series / parallel arrangement that provides a desired voltage, which supplies electrical energy to an electrical load outside the pixel array. The in Fig. The pixel arrangement shown in section 5 comprises a form of primary battery in which only one surface of the pixel platform provides significant radiative power.

[0045] The surface structure 505 of the top surface of wafer 503 is configured to absorb broadband infrared radiation and reduce the reflection of heat energy back into the platform. A design of such a surface is disclosed in Z. Wang et al., MDPI Photonics, Vol. 9, 9080574 (2022).

[0046] Fig. Figure 6 shows a complete pixel, comprising a Platform 607 and the wafer section connected to the top. Fig. 5 includes. Fig. Figure 6 shows a cross-section of a primary battery pixel with a top-side semiconductor 608 comprising a substrate 609, a dielectric film 610, and a patterned metal layer 615. The structure 605 includes the platform 607 and nanowires 606 suspended from the surrounding wafer 601. The top-side wafer 608 includes a semiconductor 611 and structures within the resonant photonic absorber 612. The platform 607 comprises a surface configured to enhance blackbody radiation, and its supporting nanowires are sealed within a hermetic cavity 620. A spacer layer 615 is attached to increase the distance between the top of the cavity wall structures 612 and the platform 607.

[0047] The spacer layer 615 can be produced as a patterned metallic or dielectric layer on the starting wafer 601. The platform 607, with its nanowires 606, is separated from the semiconductor wafer 601, which has a substrate 604, a dielectric layer 603, and an active semiconductor layer 602, by RF vapor etching. The platform 605 and the nanowires 606 encompass the active layer 603 of the wafer 601. The cavity 620 is created by wafer bonding of the wafer 608 to the wafer 601 in a vacuum environment to provide a permanent hermetic seal. Metallic connecting wires 617 are shown as being bonded to the wafer 601.

[0048] Platform 607 is cooled by a network of spontaneous blackbody cooling radiation emitted from platform 607 and heated by conductive sources within the pixel, which also includes the potential spontaneous source 612. Other heat sources in platform 607 are heat conducted by nanowires from the surrounding heat sinks 601, 608, I 2 R-heating from the nanowires 606 due to the current I supplied to a load and conducted / convected heat within the cavity 620. In embodiments in which the thermal heating of the platform 607 is sufficiently reduced, the platform is spontaneously cooled below the temperature of the isothermal heat sinks or cooling elements 601, 608.

[0049] The pixel wires 617 shown are connected to other pixels within an array to form a series / parallel combination circuit. The resulting thermoelectric Seebeck voltage, generated in each pixel due to platform cooling, provides electrical energy to charge a secondary battery or directly power a load application.

[0050] The primary battery pixel design of Fig. 7 includes both wafer 601 with its platform and nanowires 605, and wafer 608 connected at the top, as shown in Fig. Figure 6 shows, with one difference. The platform and nanowires of pixel 601 are dissolved by chemically etching the back side instead of the top side to increase the volume of cavity 720. The increased cavity size allows the growth of carbon nanotubes or other structures with enhanced infrared emissivity on the back side of platform 605, as shown in Figure 6. Fig. 7 shown.

[0051] The extended structure of Fig. 7 includes a third wafer 701, which is connected to the wafer combination of Fig. 6 is connected, with a structure 704, similar to structure 612 of Fig. 6, is configured to absorb radiation and reduce the reflection of heat emanating from the platform. The heat transfer from both surfaces is represented as infrared rays 614, 705. The third wafer 701 comprises a dielectric layer 702 over a rigid structure 703 and a patterned plasmonic film 704, which is exposed to the radiation from the platform 605.

[0052] The underside of the platform, with a similar emissivity to the top side, results in approximately twice the radiation intensity of the entire platform. This doubling of the platform's radiation intensity leads to approximately twice the pixel voltage. The pixels of Fig. 7, which use the same array circuit as the pixels of Fig. Furthermore, the 6 connected terminals provide a primary battery where the terminal voltage is also doubled.

[0053] The Fig. 8A and Fig. Figure 8B shows resonant absorption structures arranged within one or both cavity walls that provide (1) broadband absorption of blackbody radiation from the thermoelectric platform and (2) low emissivity or reflection of blackbody radiation towards the platform. These absorbing structures, which generally have a metal film, are examples of structures 505, 612, and 704 in pixels of the Fig. 5, Fig. 6 or 7. These resonance structures offer absorption, low emissivity and low reflection over a wide wavelength range, covering the wavelength range of interest from 5 to 16 micrometers.

[0054] Fig. Figure 8A shows a cavity surface providing two primary overlapping absorption resonances determined by plasmonic resonance structures 801, 802 arranged in an array format, i.e., in particular regularly. These structures may comprise a metal film or dielectric film over an underlying dielectric film.

[0055] Fig. Figure 8B shows a cavity surface that provides absorption within two resonant structures 803 and 804 arranged in an array format. Resonant structure 804 has an absorption wavelength associated with the metallic cross and another resonant wavelength associated with the metal rods surrounding the cross, providing net broadband absorption. Resonant structure 803 shows a cutout in the cavity wall that provides additional absorption. In other embodiments, the resonant absorption is achieved with a 3D structure generated in and arranged within the cavity walls.

[0056] The Fig. 8A and Fig. 8B are representative of a large variety of resonant structures which, when arranged in close proximity in an array format, provide near-absolute absorption over the broadband wavelength band of interest with a wavelength of about 10 micrometers.

[0057] Fig. Figure 9 is a schematic circuit representing a parallel / series connection of multiple pixels in an array format within the primary battery. The pixels can be connected to each other using many circuit combinations. The example in Fig. 9 comprises three groups of series-connected pixels, each group supplying a voltage at a usable level to charge a secondary battery or directly power a load device. The number of series-connected pixels 901 determines the terminal voltage V. PB the battery, and the number of pixels connected in parallel determines the short-circuit current available for a load. The nominal voltage V PB The primary battery can be set using series pixel circuits, and the maximum available load current is determined by the number of parallel circuits.

[0058] Fig. Figure 10 is a schematic diagram representing a battery system in which a primary battery 1001 is connected to charge a secondary battery 1002 / 1003, which is further connected to an application device 1004. The voltage regulator 1002 shown limits the maximum charging voltage to the secondary battery 1002 / 1003 with an avalanche diode V. A The diode V D The voltage regulator 1002 prevents the primary battery 1001 from drawing energy from the secondary battery V. SB 1003 refers to this. Other, more complex voltage regulation circuits may offer further desirable control functions. In Fig. 10. The application device 1004 is powered directly from the secondary battery V. SB 1003 fed.

[0059] Fig. Figure 11 is a schematic diagram illustrating the battery system without a secondary battery. The primary battery 1001 directly supplies an application device 1004 with electrical power via the voltage regulator 1002. In this embodiment, the primary battery 1001 provides sufficient electrical current to directly power an application device, and a secondary battery is not required. The adaptation of Fig. 11 may be particularly desirable as an implanted biomedical device and energy source for portable, low-energy application devices. SYSTEM OF BIOMEMEDICAL APPLICATION DEVICES

[0060] In embodiments, the hybrid battery system (HBS) is integrated into a biomedical device. Non-restrictive examples of such a biomedical device include a hearing aid, an implanted pacemaker, and a wearable or implanted sensor for analyzing blood components (e.g., insulin, etc.). In such embodiments, the primary battery within the HBS may be integrated with a sensor / control circuit within a sealed, implantable package. PERSONAL APPLICATION DEVICES

[0061] In some embodiments, the HBS hybrid battery system is integrated into a personal application device, such as, but not limited to, an infrared flashlight, a personal alarm, virtual reality eyeglasses (VRE), and a mobile phone. REMOTE CONTROLLED DEVICES

[0062] In some embodiments, the hybrid battery system (HBS) is integrated into a remotely controlled device, such as an LED, a light-emitting phosphor (LEP), or a laser light source. In other embodiments, the HBS is integrated into other remotely controlled devices, such as an alarm system, an electronic door lock, or a toxic gas monitor. In still other embodiments, the HBS is integrated into remotely controlled devices, such as, but not limited to, a microwave RFID radio receiver or an RFID tag, with remote control implemented via an electromagnetic interrogation device. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] US 3,413,573

[0005] US 5,796,152

[0006] US 10,643,810

[0007] US 11,231,382

[0008] US 9,006,57

[0009] Cited non-patent literature

[0000] Stefan and Ludwig Boltzmann (ca. 1879-1804

[0004] M. Rinaldi et al. in the 2020

[0007] S. Mohammadi et al, Appl. Phys. Lett., Volume 92, 221905 (2008

[0035] Z. Wang et al, MDPI Photonics, Volume 9, 9080574 (2022

[0045]

Claims

[1] Hybrid battery system (HBS) with a thermoelectric Seebeck primary battery, wherein the primary battery comprises an arrangement of planar platforms, each platform is arranged in a hermetic cavity, each platform is suspended by phononic nanowires forming a pixel within the hermetic cavity, each platform is cooled by a first spontaneous blackbody radiation emitted from its surfaces, further comprising: a) at least one surface of each platform is configured to amplify the first radiation; b) at least one surface of each wall of the respective cavity exposed to the first radiation is configured to increase the absorption capacity of the first radiation; c) the surface of the walls of the respective hermetic cavity exposed to the platform is configured to minimize a second blackbody radiation emitted from each wall of the respective hermetic cavity; d) the phononic nanowires comprise a microelectromechanical phononic MEMS structure containing a phononic crystal (PnC) metamaterial and / or randomly arranged phonon scattering structures, thereby reducing the thermal conductivity of the nanowires; e) the phononic microelectromechanical system (MEMS) structure comprises a crystalline or polycrystalline semiconductor, wherein structural elements of the phononic MEMS structure are physically separated from each other by less than the mean free path (mfp) of at least some thermally conducting phonons; f) the phononic MEMS structure increases the ratio of electrical conductivity to thermal conductivity within the phononic nanowires; and g) the pixel arrangement comprises the thermoelectric Seebeck primary battery which provides energy to an electrical application device, wherein the primary battery is formed from one or more semiconductor chips or wafers to define a plurality of hermetic cavities, each chip or wafer being configured with a structure to control a component of the spontaneous blackbody radiation within each hermetic cavity. [2] HBS according to claim 1, wherein the phononic crystal (PnC) is structured to provide a phononic band gap and the PnC structure sites are arranged in an ordered manner. [3] HBS according to claim 1 or claim 2, wherein the phononic scattering structures are randomly arranged on the surface, in the volume or on the edge of the nanowires. [4] HBS according to any one of claims 1 to 3, wherein the phononic MEMS structure comprises a semiconductor material selected from the group which includes, without limitation, silicon, silicon germanium, vanadium oxide, silicon carbide, gallium nitride and organic semiconductors. [5] HBS according to any one of claims 1 to 4, wherein the phononic MEMS structure comprises, without limitation, holes, vias, pillars, surface spots, a field of nanowires, cones, cavities, depressions, surface particles, roughened edges, implanted molecule types, porous structures and molecular aggregates arranged in a periodic or random format. [6] HBS according to any one of claims 1 to 5, wherein some of the phononic nanowires are designed to include a thin metal film which provides increased electrical conductivity and / or static positioning of the nanowires. [7] HBS according to any one of claims 1 to 6, wherein some of the phononic nanowires are designed to include a layer of dielectric material which provides electrical insulation between the nanowire layers and / or static positioning of the nanowires. [8] HBS according to any one of claims 1 to 7, wherein one or more planar surfaces of the platform comprise, without limitation, carbon nanotubes (CNTs), graphene, black silicon, carbon black or black gold, which provide an increased emissivity for first radiation within a broad wavelength range. [9] HBS according to any one of claims 1 to 8, wherein the inner walls of the respective hermetic cavity are configured to reduce reflection and increase absorption of the first radiation from the platform. [10] HBS according to any one of claims 1 to 9, wherein the walls of the respective hermetic cavity comprise resonance structures which increase the absorption of the first radiation and reduce the second radiation over a broad infrared wavelength range. [11] HBS according to any one of claims 1 to 10, wherein the hermetic cavity is kept in a vacuum state or is backfilled with a gas with low thermal conductivity such as Ar, Xe, Kr, thereby providing an increase in thermal insulation for the platform. [12] HBS according to any one of claims 1 to 11, wherein the hermetic cavity comprises a getter material to maintain a low-pressure environment within the hermetic cavity. [13] HBS according to any one of claims 1 to 12, wherein the thermoelectric Seebeck primary battery comprises thermocouples connected as a parallel / series combination circuit, thereby providing a voltage level suitable to be adapted to provide a maintenance charge for a secondary battery. [14] HBS according to any one of claims 1 to 13, wherein a voltage regulator is electrically connected between the primary and the secondary battery. [15] HBS according to any one of claims 1 to 14, wherein the electrical application device comprises a biomedical device. [16] HBS according to any one of claims 1 to 14, wherein the electrical application device comprises a device selected from a group consisting of an alarm system, a flashlight, a digital clock, an electronic door lock, a poison gas monitor and virtual reality glasses (VRE). [17] HBS according to any one of claims 1 to 16, wherein the primary battery enables operation in an environment at temperatures up to 1500 °C and the primary battery comprises a high-temperature semiconductor. [18] HBS according to any one of claims 1 to 17, wherein each platform is formed with a lateral edge dimension in the range of 250 nanometers to several millimeters. [19] HBS according to any one of claims 1 to 18, wherein the phononic nanowires are formed with a thickness in the range of 10 nanometers to 1 micrometer.

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