METHOD FOR MEASURING THE SIZE OF HEIGHT CHANGE OF RAW SILICON MATERIAL AND METHOD FOR PRODUCEING SILICON INCRYSTALS AND DEVICE FOR PRODUCEING SILICON INCRYSTALS USING THE SAME
DE112024003496T5Undetermined Publication Date: 2026-07-09SUMCO CORP
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Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- SUMCO CORP
- Filing Date
- 2024-05-10
- Publication Date
- 2026-07-09
Abstract
[Task] To provide a method for the stable measurement of the magnitude of the change in height of a silicon raw material during a raw material melting step; as well as a manufacturing method and a manufacturing apparatus for a silicon single crystal using the same.[Solution] The method for measuring the height of a silicon raw material according to the present invention comprises the following: taking pictures of the silicon raw material with a camera from above during a raw material melting step in which a silicon raw material containing a large number of polysilicon pieces and placed in a quartz crucible is heated to produce a silicon melt; obtaining a first height reference point Pra of the silicon raw material from a first furnace interior image Ma taken using the camera (S21-S23); obtaining a second height reference point Prb of the silicon raw material from a second furnace interior image Mb taken after taking the first furnace interior image Ma (S24-S26); and obtaining a magnitude of the change Δh in the height of the silicon raw material from the difference between the first height reference point Pra and the second height reference point Prb (S27).
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