SEMICONDUCTOR DEVICE

Abstract

A semiconductor device comprises a chip with a main surface; and a gate structure of a trench electrode type formed in the main surface, wherein the gate structure comprises: a trench formed in the main surface, an insulating film having a first film section covering a wall surface of an inner section of the trench, and a second film section covering a wall surface of an end section of the trench and having a thickness greater than the thickness of the first film section, and an embedded electrode embedded in the trench above the insulating film.