ELECTRONIC DEVICE, INCLUDING A BURIED SHIELDING AND A GAP AREA

Abstract

An electronic device can include a buried shield (326) and at least one gap region (352). In one implementation, a source region can include a shallow and a deep section (756 and 336). A center line (852) through the gap region can pass through the shallow section and not through the deep section. In the same or another implementation, the shallow section can overlap the gap region, and the deep section does not. In another implementation, the electronic device can include a first and a second gap region (352). Lengths of the first and second gap regions can lie on intersecting lines. The gap regions can be designed such that a gap region resistance can be within the order of magnitude of a channel resistance, corresponding to channel regions of transistor structures within a power transistor.