Power module with staggered external power connections

Abstract

Performance module, including: a carrier (102); a plurality of semiconductor chips (104) mounted on the carrier (102); a housing (108) comprising a body (120), the body (120) encapsulating the plurality of semiconductor chips (104) and at least a portion of the carrier (102); two or more external power connections (110) electrically connected to one or more of the plurality of semiconductor chips (104), the two or more external power connections (110) being positioned laterally adjacent to one another along a first side (112) of the housing (108) and forming an elongated segment (122); wherein a width of the elongated segment (122) along the first side (112) of the housing (108) is greater than a width of the body (120) along the first side (112) of the housing (108).

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a power module, in particular a power module with laterally staggered external power connections. BACKGROUND

[0002] Power modules serve as fundamental building blocks for a wide variety of applications, including industrial power supplies, renewable energy systems, and electric vehicles, among others. Typically, a power module consists of one or more semiconductor chips encapsulated within a protective housing. In recent years, advances in power electronics have led to significant reductions in the size of semiconductor chips, accompanied by substantial increases in their power density. As a result, the overall footprint of power modules has decreased, while the heat generated by the semiconductor chips has increased. This shrinking footprint can create a bottleneck for effective thermal management within the power module, posing a significant challenge to reliable power module performance.

[0003] It is an object of the present invention to provide a compact power module with efficient and robust handling and thermal management. SUMMARY

[0004] The present disclosure relates to a power module comprising a carrier, a plurality of semiconductor chips mounted on the carrier, and a housing encapsulating the plurality of semiconductor power chips and at least a portion of the carrier. The power module further comprises two or more external power terminals electrically connected to one or more of the plurality of semiconductor chips. The two or more external power terminals are positioned laterally adjacent to one another along a first side of the housing and form an elongated segment. A width of the elongated segment along the first side of the housing is greater than a width of the body along the first side of the housing.

[0005] The present disclosure further relates to a power module comprising a carrier, a plurality of semiconductor chips mounted on a surface side of the carrier. The power module further comprises a housing comprising a body and an elongated segment. The body encapsulates the plurality of semiconductor chips and at least a portion of the carrier. A width of the elongated segment along a first side of the housing is greater than a width of the body along the first side of the housing. A first of the two or more external power terminals protrudes from the elongated segment of the housing and a second of the two or more external power terminals protrudes from the body of the housing.

[0006] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present disclosure is illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like reference numerals refer to similar or identical elements. The elements of the drawings are not necessarily to scale relative to one another. The features of the various illustrated examples may be combined, provided they are not mutually exclusive. Fig. 1A and Fig. 1B shows an example of a power module with and without a housing. Fig. 2 shows another example of a power module having an elongated segment of a housing aligned along a side of a body of the housing. Fig. Figure 3 shows another example of a power module without a housing and with two external power connectors made from a single clip. Fig. 4 shows another embodiment of a power module having a first external power terminal and a second external power terminal projecting from a body and an elongated segment of a housing, respectively. DETAILED DESCRIPTION

[0008] The examples described herein provide a power module including a carrier, a plurality of semiconductor chips, a package, and two or more external power terminals. The two or more external power terminals are positioned side by side along a first side of the package and form an elongated segment. A width of the elongated segment along the first side of the package is greater than a width of the body of the package along the first side of the package. The two or more external power terminals are at least partially exposed from the package. During operation, the two or more external power terminals are part of the current-carrying path; their extended width provides a lower-resistance path for current flow, which can help avoid hot spots.

[0009] Fig. 1A and Fig. 1B show an example of a power module 100 with and without a housing 108. The power module 100 has a carrier 102, a plurality of semiconductor chips 104, a housing 108, and external power terminals 110. If Fig. 1A and Fig. 1B shows three external power terminals 110, there may be only two or even more than three external power terminals 110, depending on the layout and internal connection of the power module 100. The housing 108 may be, for example, a molding compound, but is not limited thereto. The external power terminals 110 are electrically connected to one or more of the plurality of semiconductor chips 104 and the carrier 102. The housing 108 encapsulates the plurality of semiconductor chips 104 and at least a portion of the carrier 102. In particular, a body 120 of the housing 108 encapsulates the plurality of semiconductor chips 104 and the at least a portion of the carrier 102. The external power terminals 110 are positioned laterally adjacent to one another along a first side 112 of the housing 108, forming an elongated segment 122.The external power terminals 110 may be embedded in the housing 108 and may be at least partially exposed from the housing 108, thus the elongated segment 122 includes exposed external power terminals 110 and portions of the housing 108 surrounding the exposed external power terminals 110. A width of the elongated segment 122 along the first side 112 of the housing 108 is greater than a width of the body 120 of the housing 108 along the first side 112 of the housing 108. In other words, the elongated segment 122 may protrude from the body 120 of the housing 108 in a lateral staggering direction of the two or more external power terminals 110. The width of the elongated segment 122 along the first side 112 of the housing 108 is a largest width of the elongated segment 122 along the first side 112 of the housing 108.

[0010] An inner portion of each of the power terminals 110 is encapsulated by the body 120 of the housing 108, and an outer portion of each of the external power terminals 110 is exposed from the housing 108. A gap between the exposed outer portions of the external power terminals 110 may be filled by a portion of the housing 108 to increase a creepage distance between the external power terminals 110.

[0011] A width of the laterally staggered external power terminals 110 along the first side 112 of the housing 108 is greater than a width of the body 120 along the first side 112 of the housing 108. The width of the external power terminals 110 implies a cumulative width of each external power terminal of the external power terminals 110 in the staggering direction along the first side 112 of the housing 108. The width of the external power terminals 110 can be greater than the width of the first side 112 of the housing 108 by a factor of 1.5 to 2.5, in particular 1.6 to 2.3, in particular 1.65 to 2.

[0012] The physical outline of the power module 100 is largely determined by its housing 108 and external power terminals 110. Because the elongated segment 122 has a greater width than the body 120 of the housing 108, the overall footprint of the power module 100 is not significantly increased. Heat generated at the external power terminals 110 can be dissipated through the exposed outer portions of the external power terminals 110, which can help prevent hot spots.

[0013] Disentangling the width of the staggered external power terminals 110 or the elongated segment 122 from the width of the body 120 of the package 108 can provide a further advantage when combining multiple different power modules in a single application. Regardless of the chip content and thus the size of the body 120 of the package 108, the external terminals would always have the same width, enabling system-level power module integration by using the same materials, the same process, and the same parameterizations to mount different power modules, for example, on a cooler or a DC link capacitor, etc. For example, busbars of one width can be used during power system assembly.Furthermore, the busbars can be connected to the respective power modules using the same assembly tool and the same operating parameters. This not only reduces the complexity of the assembly process but also increases its robustness.

[0014] Optional and as in Fig. 1A and Fig. 1B, another external power terminal 116 may protrude from a second side 118 of the housing 108 opposite the first side 112 of the housing 108. The another external power terminal 116 may be coupled to the plurality of semiconductor chips 104 and the carrier 102.

[0015] As in Fig. 1A, the laterally staggered external power terminals 110 along the first side 112 of the housing 108 project beyond the body 120 of the housing 108 by equal amounts on opposite third sides 114 of the housing 108. The third side 114 of the housing 108 may be a side of the body 120, in particular a side of the body 120 adjacent the elongated segment 122. In other words, the elongated segment 122 is positioned centrally aligned with the center of the body 120 of the housing 108 such that the elongated segment 122 projects beyond the body 120 of the housing 108 by equal amounts on both third sides 114 of the housing 108.

[0016] Alternatively, the laterally staggered external power terminals 110 along the first side 112 of the housing 108 may project beyond the body 120 of the housing 108 only on one of the third sides 114 of the housing 108, as shown in Fig. 2. Here, one side 124 of the elongated segment 122 is aligned with one of the third sides 114 of the body 120 of the housing 108, while the elongated segment 122 projects beyond the other third side 114 of the body 120 of the housing 108.

[0017] With further reference to Fig. 1B is an inside of the power module 100 of Fig. 1A without the housing 108. As described herein, the power module 100 includes the carrier 102, the plurality of semiconductor chips 104, and three external power terminals 110. The carrier 102 is a conductive carrier having a plurality of parts that are electrically isolated from one another. Each semiconductor chip 103, 105 of the plurality of semiconductor chips 104 has an upper metallization layer 103a, 105a on the front side and a lower metallization layer on a back side of the respective semiconductor chip 103, 105 opposite the front side. The upper metallization layer forms a first load electrode on the front side of the semiconductor chip, and the lower metallization layer forms a second load electrode on the back side of the semiconductor chip. Each semiconductor chip 103, 105 of the plurality of semiconductor chips 104 may have a control electrode formed on the front side of the respective semiconductor chip 103, 105 (not shown).

[0018] A first semiconductor chip 103 of the plurality of semiconductor chips 104 is mounted on a first part 102a of the plurality of parts of the carrier 102. The backside of the first semiconductor chip 103 faces the first part 102a of the carrier 102 and is electrically coupled thereto. In particular, the lower metallization layer of the first semiconductor chip 103 can be soldered, sintered, or welded onto the first part 102a of the carrier 102, thus connecting the second load electrode of the first semiconductor chip 103 to the first part 102a of the carrier 102. The upper metallization layer 103a of the first semiconductor chip 103 is electrically coupled to a second part 102b of the plurality of parts of the carrier 102. In particular, a first electrical connector 130 connects the upper metallization layer 103a of the first semiconductor chip 103 and the second part 102b of the carrier 102.Thus, the first load electrode of the first semiconductor chip 103 is connected to the second part 102b of the carrier 102. The first electrical connector 130 may comprise one or more bond wires and / or bond ribbons that may be soldered, sintered, or welded to the upper metallization layer 103a of the first semiconductor chip 103 and the second part 102b of the carrier 102.

[0019] Likewise, a second semiconductor chip 105 of the plurality of semiconductor chips 104 is mounted on a third portion 102c of the plurality of portions of the carrier 102 adjacent to the first portion 102. The backside of the second semiconductor chip 105 faces the third portion 102c of the carrier 102 and is electrically coupled thereto. In particular, the lower metallization layer of the second semiconductor chip 105 can be soldered, sintered, or welded onto the third portion 102c of the carrier 102. Thus, the second load electrode of the second semiconductor chip 105 is connected to the third portion 102c of the carrier 102. The upper metallization layer 105a of the second semiconductor chip 105 is electrically coupled to a fourth portion 102d of the plurality of portions of the carrier 102. In particular, a second electrical connector 132 connects the upper metallization layer 105a of the second semiconductor chip 105 and the fourth part 102d of the carrier 102.The external power terminal 116 is also mounted on the fourth part 102d of the carrier 102. Thus, the first load electrode of the second semiconductor chip 105 is connected to the external power terminal 116. The second electrical connector 132 may further comprise one or more bond wires and / or bond ribbons that may be soldered, sintered, or welded to the upper metallization layer 105a of the second semiconductor chip 105 and the fourth part 102d of the carrier 102.

[0020] Optionally, the plurality of semiconductor chips 104 may include a further first semiconductor chip 103 and a further second semiconductor chip 105. A third electrical connector 134 may connect the upper metallization layer 105a of the second semiconductor chip 105 and the first part 102a of the carrier 102. Thus, the first semiconductor chip 103 is electrically coupled to the external power terminal 116 through the third electrical connector 134, the upper metallization layer 105a of the second power semiconductor chip 105, and the second electrical connector 132. Thus, the plurality of semiconductor chips 104 may form, among other things, a half-bridge circuit. The third electrical connector 134 may further comprise one or more bond wires and / or bond ribbons.

[0021] The two or more external power terminals 110 may include a first external power terminal 110a and a second external power terminal 110b. The first external power terminal 110a may be connected to the third portion 102c of the carrier 102. A base of the first external power terminal 110a may be soldered, sintered, or welded to the third portion 102c of the carrier 102. Alternatively, another electrical connector may connect the first external power terminal 110a to the third portion 102c of the carrier 102. The base of the first external power terminal 110a is bent relative to the inner portion 136 of the first external power terminal 110a. The first external power terminal 110a bridges the first part 102a of the carrier 102, i.e., the inner part 136 of the first external power terminal 110a extends over the first part 102a of the carrier 102 without physically touching the first part 102a of the carrier 102.

[0022] The first electrical connector 130 may be extended and connected to the second external power terminal 110b of the first part 102a of the carrier 102. Alternatively, another electrical connector may connect the second external power terminal 110b to the second part 102b of the carrier 102.

[0023] In one example, the first external power terminal 110a is a DC terminal of a first polarity, the second external power terminal 110b is a DC terminal of a second polarity different from the first polarity, and the external power terminal 116 may be an AC terminal. The first polarity may be a positive polarity of a DC current, DC+, and the second polarity may be a negative polarity of a DC current, DC-. The first semiconductor chip 105 may be configured as a low-side switch, and the second semiconductor chip 103 may be configured as a high-side switch.

[0024] As in Fig. 1A, there are three external power terminals 110 along the first side 112 of the housing 108, i.e., a third external power terminal 110c. In the Fig. In the layout illustrated in Figure 1B, the first and third external power terminals 110a and 110c may have a first polarity and may enclose the external power terminal 110b, which may have a second polarity. While the first and third external power terminals 110a and 110c are shown as DC+ and the inner power terminal is DC-, it should be understood that the order may be reversed. The third power terminal 110c may even be an AC terminal.

[0025] It is understood that the Fig. 1A and Fig. 1B for the power module 100 described arrangements of the plurality of semiconductor chips 104 on the carrier 102 and the connection of the external power terminals 110 to the carrier 102 also for the power module 200 of Fig. 2 are applicable.

[0026] Fig. 3 shows an alternative example of the internal layout of the power module 300 of Fig. 1B. This power module 300 may include some or all of the features of the power module 100 of Fig. 1B and thus will be discussed only in terms of differences. The first external power terminal 110a and the third external power terminal 110c may branch from a single clip 302. A central portion 304 of the clip 302 along the first side 112 of the housing 108 may have a width that is less than the width of the body 120 along the first side 112 of the housing 108. Thus, the central portion 304 of the clip may be encapsulated by the body 120 of the housing 108. A base of the clip 302 may be soldered, sintered, or welded to the third portion 102c of the carrier 102. The other end of the clip 302 is exposed from the housing 108, which forms the outer portion of the first and third external power terminals 110a, 110c. The base of the clip 302 may be bent such that the middle portion 304 of the clip can bridge the first portion 102a of the carrier 102 without physically touching the first portion 102a of the carrier 102.The clip 302 and the second external power terminal 110b may be part of a lead frame.

[0027] Fig. 4 shows another example of a power module 400. The power module comprises a carrier and a plurality of semiconductor chips mounted on a surface side of the carrier (in Fig. 4 not shown). The power module 400 further includes a housing 108 and external power terminals 110. The housing 108 includes a body 120 and an elongated segment 122. The body 120 encapsulates the plurality of semiconductor chips and at least a portion of the carrier. A width of the elongated segment 122 along a first side 112 of the housing 108 is greater than a width of the body 120 along the first side 112 of the housing 108. The first side 112 of the housing 108 may be a side of the elongated segment 122 of the housing 108 from which at least one of the external power terminals 110 protrudes.

[0028] In Fig. 4, two external power terminals 110 are shown. There may be only two or even more than two external power terminals 110, depending on the layout and internal connection of the power module 400. The external power terminals 110 may be electrically connected to one or more of the plurality of semiconductor chips. The external power terminals 110 are partially exposed through the housing 108.

[0029] In one example, the external power terminals 110 may protrude from a surface 150 of the housing 108 that is parallel to the surface side of the carrier. Alternatively, at least one of the external power terminals 110 may protrude from the first side 112 of the housing 108, and at least one of the external power terminals 110 may protrude from the surface 150 of the housing 108. In particular, the first external power terminal 110a may protrude from the elongated segment 122 of the housing 108, and the second external power terminal 110b may protrude from the body 120 of the housing 108.

[0030] Optionally, the first external power terminal 110a and the second external power terminal 110b may be positioned laterally adjacent to one another, in particular along a third side 114 of the housing 108 orthogonal to the first side 112 and the surface 150 of the housing 108.

[0031] In one example, the body 120 may include a recess and the second external power terminal 110b may be exposed from the recess.

[0032] The physical outline of the power module 400 is largely determined by its housing 108 and external power terminals 110. Because the elongated segment 122 has a greater width than the body 120 of the housing 108, the overall footprint of the power module 100 is not significantly increased. Heat generated at the external power terminals 110 can be dissipated through the exposed outer portions of the external power terminals 110, which can help prevent hot spots.

[0033] In one example, the first external power terminal 110a is a DC connection of a first polarity, and the second external power terminal 110b is a DC connection of a second polarity that is different from the first polarity and is insulated from the DC connection of the first polarity by portions of the housing 108. Another external power terminal 116 may protrude from a second side 118 of the housing 108 opposite the first side 112 of the housing 108. The another external power terminal 116 may be coupled to the plurality of semiconductor chips and the carrier.

[0034] Optionally, the elongated segment 122 can be positioned centrally aligned with the center of the body 120 of the housing 108 such that the elongated segment 122 overhangs the body 120 of the housing 108 by equal amounts on opposite third sides 114 of the housing 108 connecting the first side 112 and the second side 118 of the housing 108. The third side 114 of the housing 108 can be one side of the body 120 of the housing 108. Alternatively, one side of the elongated segment 122 can be aligned with one of the third sides 114 of the body 120 of the housing 108, while the elongated segment 122 overhangs another third side 114 of the body 120 of the housing 108.

[0035] The carrier described herein may be a leadframe. The parts of the carrier may be different islands of the leadframe. Alternatively, the carrier may be a direct copper bonded substrate (DCB) or an active metal substrate (AMS). The parts of the carrier may be islands of a patterned metal layer attached to a thermally conductive but electrically insulating layer of the DCB or AMS. The two or more external power terminals may be attached to the patterned metal layer of the DCB or AMB substrate.

[0036] The two or more external power terminals described herein may form part of a lead frame. The two or more external power terminals described herein may comprise copper, aluminum, or an alloy thereof.

[0037] A housing described herein may comprise an encapsulant, e.g., an electrically insulating material, or may be a thermosetting material or a thermoplastic material. A thermosetting material may, for example, be made from an epoxy resin, a silicone resin, or an acrylic resin. A thermoplastic material may, for example, comprise one or more materials selected from the group consisting of polyetherimide (PEI), polyethersulfone (PES), polyphenylene sulfide (PPS), polyamideimide (PAI), and polyethylene terephthalate (PET). Thermoplastic materials melt upon application of pressure and heat during molding or lamination and cure (reversibly) upon cooling and pressure release.

[0038] The housing may be formed by, for example, but is not limited to, injection molding or transfer molding, in which the encapsulant is injected into a mold cavity. The encapsulant is then cooled and solidified to form the housing.

[0039] The semiconductor chip described herein may be a power semiconductor chip, e.g., configured as power MISFETs (metal-insulator-semiconductor field-effect transistors), power MOSFETs (metal-oxide-semiconductor field-effect transistors), IGBTs (insulated-gate bipolar transistors), JFETs (junction-gate field-effect transistors), HEMTs (high electron mobility transistors), power bipolar transistors, or power diodes, such as PIN diodes or Schottky diodes.

[0040] The semiconductor chip can be made of a specific semiconductor material, such as Si, SiC, SiGe, GaAs, GaN, AlGaN, InGaAs, InAlAs, etc., and can further contain inorganic and / or organic materials that are not semiconductors. The semiconductor chip can be of various types and can be manufactured using various technologies.

[0041] The internal layout of the power module may include a half-bridge circuit, with the semiconductor chip having the first load electrode and the second load electrode on the front and back sides of the semiconductor chip, respectively. Alternatively, the half-bridge circuit may be implemented by having the load electrodes only on the front side of the semiconductor chip, and the back side of the chip may be electrically inactive.

[0042] A variety of different types of power systems may be configured to utilize a power module as described herein. For example, a power system according to the disclosure may include, for example, an engine control unit (ECU), a power supply, a DC-DC voltage converter, an AC-DC voltage converter, a power amplifier, and many other devices, particularly power devices. Further examples:

[0043] Example 1: A power module comprising a carrier; a plurality of semiconductor chips mounted on the carrier; a housing encapsulating the plurality of semiconductor chips and at least a portion of the carrier; two or more external power terminals electrically connected to one or more of the plurality of semiconductor chips, wherein the two or more external power terminals are positioned laterally adjacent to one another along a first side of the housing and form an elongated segment; wherein a width of the elongated segment along the first side of the housing is greater than a width of the body along the first side of the housing.

[0044] Example 2: A power module according to example 1, wherein a first of the two or more external power connections is a DC connection of a first polarity; and a second of the two or more external power connections is a DC connection of a second polarity that is different from the first polarity and is insulated from the DC connection of the first polarity by portions of the housing.

[0045] Example 3: A power module according to example 2, wherein a third of the two or more external power connections is a DC connection of the first polarity and the first and third of the two or more external power connections sandwich the second of the two or more external power connections along the first side of the housing.

[0046] Example 4: A power module according to example 3, wherein the first and third of the two or more external power connections branch from a single clip, the middle part of the clip having a width that is smaller than the body of the housing.

[0047] Example 5: A power module according to example 4, wherein the single clip bridges a first portion of the carrier that is connected to the second of the two or more external power connections.

[0048] Example 6: A power module according to any one of examples 1 to 3, wherein the first of the two or more external power connections bridges a first portion of the carrier connected to the second of the two or more external power connections.

[0049] Example 7: A power module according to any one of the preceding examples, wherein the laterally offset two or more external power connections along the first side of the housing project beyond the body of the housing by equal amounts on both sides of the housing.

[0050] Example 8: A power module according to any one of examples 1 to 6, wherein the laterally offset two or more external power connections along the first side of the housing project beyond the body of the housing on only one side of the housing.

[0051] Example 9: A power module comprising: a carrier; a plurality of semiconductor chips mounted on a surface side of the carrier; a housing comprising a body and an elongated segment, the body encapsulating the plurality of semiconductor chips and at least a portion of the carrier; wherein a width of the elongated segment along a first side of the housing is greater than a width of the body along the first side of the housing; and wherein a first of the two or more external power terminals protrudes from the elongated segment of the housing and a second of the two or more external power terminals protrudes from the body segment of the housing.

[0052] Example 10: The power module of example 9, wherein the first of the two or more external power connections is a DC connection of a first polarity; and the second of the two or more external power connections is a DC connection of a second polarity that is different from the first polarity and is insulated from the DC connection of the first polarity by portions of the housing.

[0053] Although specific examples have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and / or equivalent implementations may be substituted for the specific examples shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific examples discussed herein. Therefore, it is intended that this invention be limited only by the claims and their equivalents.

[0054] It should be noted that the methods and devices, including their preferred embodiments, as set forth in this document can be used alone or in combination with the other methods and devices disclosed in this document. Furthermore, the features set forth in connection with one device are also applicable to a corresponding method, and vice versa. Furthermore, all aspects of the methods and devices set forth in this document can be combined in any desired manner. In particular, the features of the claims can be combined with one another in any desired manner.

[0055] It should be noted that the description and drawings merely illustrate the principles of the proposed methods and systems. Those skilled in the art will be able to implement various arrangements that, although not expressly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and embodiments set forth in the present document are primarily intended to be expressly provided for illustrative purposes only to assist the reader in understanding the principles of the proposed methods and systems. Furthermore, all statements herein providing principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to include equivalents thereof.

Claims

[1] Performance module, comprising: a carrier (102); a plurality of semiconductor chips (104) mounted on the carrier (102); a housing (108) comprising a body (120), the body (120) encapsulating the plurality of semiconductor chips (104) and at least a portion of the carrier (102); two or more external power connections (110) electrically connected to one or more of the plurality of semiconductor chips (104), the two or more external power connections (110) being positioned laterally adjacent to one another along a first side (112) of the housing (108) and forming an elongated segment (122); wherein a width of the elongated segment (122) along the first side (112) of the housing (108) is greater than a width of the body (120) along the first side (112) of the housing (108). [2] The power module of claim 1, wherein a first (110a) of the two or more external power connections (110) is a DC connection of a first polarity; and a second (110b) of the two or more external power connections (110) is a DC connection of a second polarity different from the first polarity and insulated from the DC connection of the first polarity by portions of the housing (108). [3] The power module of claim 2, wherein a third (110c) of the two or more external power connections (110) is a DC connection of the first polarity, and the first (110a) and third (110c) of the two or more external power connections (110) sandwich the second (110b) of the two or more external power connections (110) along the first side (112) of the housing (108). [4] The power module of claim 3, wherein the first (110a) and the third (110c) of the two or more external power connections (110) branch from a single clip (302), the central portion (304) of the clip (302) having a width smaller than the body (120) of the housing (108). [5] The power module of claim 4, wherein the single clip bridges a first portion (102a) of the carrier (102) connected to the second (110b) of the two or more external power connections (110). [6] The power module of any one of claims 1 to 3, wherein the first (110a) of the two or more external power connections (110) bridges a first portion (102a) of the carrier (102) connected to the second (110b) of the two or more external power connections (110). [7] A power module according to any one of the preceding claims, wherein the laterally offset two or more external power connections (110) along the first side (112) of the housing (108) project beyond the body (120) of the housing (108) by equal amounts on both sides (114) of the housing (108). [8] Power module according to one of claims 1 to 6, wherein the laterally offset two or more external power connections (110) along the first side of the housing (108) project beyond the body (120) of the housing (108) only on one side (114) of the housing (108). [9] Performance module, comprising: a carrier; a plurality of semiconductor chips mounted on one surface side of the carrier; a housing (108) comprising a body (120) and an elongated segment (122), the body (120) encapsulating the plurality of semiconductor chips and at least a portion of the carrier; wherein a width of the elongated segment (122) along a first side (112) of the housing (108) is greater than a width of the body (120) along the first side (112) of the housing (108); and wherein a first (110a) of the two or more external power terminals (110) protrudes from the elongated segment (122) of the housing (108) and a second (110b) of the two or more external power terminals (110) protrudes from the body (120) of the housing (108). [10] The power module of claim 9, wherein the first (110a) of the two or more external power connections (110) is a DC connection of a first polarity; and the second (110b) of the two or more external power connections (110) is a DC connection of a second polarity different from the first polarity and insulated from the DC connection of the first polarity by portions of the housing (108).

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