LASER-BASED CUTTING PROCESS

Description

[0001] The present invention relates according to claims 1 and 2 to methods for producing a separation area in a solid and according to claims 8 and 9 to methods for at least partially dividing a solid.

[0002] The traditional method of dividing solids, especially wafers, is sawing. However, this separation process has numerous disadvantages. Sawing always produces chips, which represent wasted base material. Furthermore, the thickness variation of the sawn discs increases with increasing saw height. Additionally, the sawing element causes grooves to form on the surfaces of the discs being separated.

[0003] It is therefore evident that the "sawing" separation process results in very high material costs and rework costs.

[0004] Furthermore, publication WO 2013 / 126927 A2 discloses a method for separating device layers from a starting wafer. According to WO 2013 / 126927 A2, the entire assembly is heated very intensely as a result of laser exposure. This heating is necessary to generate internal stresses in the solid by exploiting the different coefficients of thermal expansion of the solid material and a "handler." It is evident that the thermal resistance of the "handler" must be very high due to the extremely high temperatures involved. Furthermore, according to WO 2013 / 126927 A2, the laser beams are always introduced into the solid via a surface that is not part of the layer to be separated. This also leads to intense heating of the solid.The high temperatures also have the disadvantage that the solid warps or expands unintentionally, making the creation of crystal lattice modifications very imprecise.

[0005] According to WO 2013 / 126927 A2, thick and large solids cannot be machined.

[0006] It is therefore the object of the present invention to provide an alternative method for separating solid components, in particular several solid layers, from a solid. The aforementioned object is achieved according to the invention by a method according to claim 1. The method according to the invention relates to a method for generating a separation zone in a solid, in particular for dividing the solid along the separation zone, wherein the solid component to be separated is thinner than the solid after the reduction of the solid component.According to the invention, the method preferably comprises at least the step of modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, in particular a pico- or femtosecond laser, wherein the modifications, in particular the laser beams, penetrate the solid via a surface of the solid portion to be detached, wherein several modifications are generated in the crystal lattice, wherein the crystal lattice, as a result of the modifications, tears in at least one portion, in particular subcritically, in the regions surrounding the modifications.

[0007] This solution is advantageous because, for example, it allows for a defined weakening of the solid without causing chips.

[0008] Furthermore, the present invention provides, for the first time, a method by which a solid body does not need to be cut orthogonally to its longitudinal direction of reduction, but rather by subjecting it to the laser in its longitudinal direction in such a way that a solid layer is removed. This method also has the advantage that the laser beams do not need to penetrate the solid body over its entire radius, but can be introduced into the solid body via a layer that is preferably parallel to the separation or detachment layer. This is particularly advantageous for solid bodies whose radius is greater than or equal to the thickness of the solid layer to be removed.

[0009] According to a further preferred embodiment of the present invention, the crystal lattice tears at least predominantly in a portion spaced away from the center of the respective modification. This solution is particularly advantageous because it reduces the need for post-processing of the portion of the solid where, after separation, less of the modification(s) remains by volume.

[0010] The aforementioned problem is also solved according to the invention by a method according to claim 3. The further method according to the invention for generating a detachment zone in a solid, in particular for dividing the solid along the detachment zone, preferably comprises at least the steps of modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, especially a pico- or femtosecond laser, or an ion implanting agent, by means of which ions are introduced into the crystal lattice to modify the crystal lattice, wherein several modifications are generated in the crystal lattice, and of conditioning at least several of the modifications by means of a conditioning agent, in particular a temperature control device, wherein the crystal lattice tears in at least a proportion in the regions surrounding the modification by means of the conditioning.

[0011] The aforementioned problem is also solved according to the invention by a method according to claim 8. The further method according to the invention for at least partially dividing a solid comprises one of the subject matter of claims 1 to 3, wherein so many modifications are produced in the crystal lattice that the individual cracks combine to form a principal crack, through which the solid is at least partially and preferably completely divided.

[0012] This solution is advantageous because, for example, it allows for a defined division of the solid without causing chips.

[0013] The aforementioned problem is also solved according to the invention by a method according to claim 9. The further method according to the invention for at least partially dividing a solid body comprises one of the subject matter of claims 1 to 2, wherein the modifications are produced in a first section of the solid body, whereby a main crack extending through the individual, in particular subcritical, cracks is formed, wherein after the formation of the main crack or as a result of the formation of the main crack, further modifications are produced in at least one further section of the solid body, wherein the main crack is also led into the at least one further section by cracks in the region of the further modifications, in particular until the solid body components initially separated locally from one another by the main crack are completely separated from one another.

[0014] This solution is advantageous because, for example, it also allows for a defined division of the solid without causing chips.

[0015] Subcritical here preferably means that crack propagation ceases or stops before the crack divides the solid into at least two parts. Preferably, a subcritical crack propagates less than 5 mm, and in particular less than 1 mm, within the solid. The modifications are preferably generated such that, for example, when separating flat solid plates, the subcritical cracks preferably propagate predominantly in the same plane, in particular in a plane parallel to the surface of the solid through which the laser beams penetrate, or in a defined orientation. The modifications are preferably generated such that, for example, when separating uneven solids, the subcritical cracks preferably propagate in a defined manner, e.g., in a spherical layer or layer, such that the detachment area acquires a defined, in particular spherical, shape.

[0016] The solid is preferably an ingot or a wafer. Particularly preferably, the solid is a material that is at least partially transparent to laser beams. It is therefore also conceivable that the solid comprises a transparent material or is partially made of a transparent material, such as sapphire. Other materials that could be used as solid material, alone or in combination with another material, include, for example, wide band gap materials, InAlSb, high-temperature superconductors, and in particular rare-earth cuprates (e.g., YBa₂Cu₃O₇). It is additionally or alternatively conceivable that the solid is a photomask, whereby, in the present case, any photomask material known at the filing date and, particularly preferably, combinations thereof can be used as the photomask material. Furthermore, the solid can additionally or alternatively comprise or consist of silicon carbide (SiC).

[0017] According to a further preferred embodiment of the present invention, the energy of the laser beam of the laser, in particular fs laser (femtosecond laser), is selected such that the damage propagation in the solid or in the crystal is less than three times the Reyleigh length, preferably less than the Reyleigh length and particularly preferably less than one third of the Reyleigh length.

[0018] According to a further preferred embodiment of the present invention, the crystal lattice enters at least predominantly in a proportion spaced away from the center Z of the respective modification.

[0019] According to a further preferred embodiment of the present invention, the crack passes at least section by section through the majority, in particular the entirety, of the modifications or runs at least at a distance from the majority, in particular the entirety, of the modifications.

[0020] According to a further preferred embodiment of the present invention, a first number of modifications are generated with their center Z on one side of the detachment area and a second number of modifications are generated with their center on the other side of the detachment area.

[0021] According to a further preferred embodiment of the present invention, the modifications are produced by means of a laser, wherein the pulse intervals are provided between 0.01 µm and 10 µm and / or line spacings are provided between 0.01 µm and 20 µm and / or a pulse repetition frequency is provided between 16kHz and 1024kHz.

[0022] According to a further preferred embodiment of the present invention, the wavelength of the laser beam of the laser, in particular of the fs laser, is selected such that the absorption of the solid or material is less than 10cm -1< and preferably less than 1cm -1< and particularly preferably less than 0.1cm -1<.

[0023] According to a further preferred embodiment of the present invention, the individual modifications or defects or damaged areas each result from a multi-photon excitation caused by the laser, in particular an fs laser.

[0024] According to a further preferred embodiment of the present invention, the solid is connected to a cooling device via a solid surface, wherein the solid surface connected to the cooling device is parallel or substantially parallel to the surface through which the laser beams penetrate the solid, and wherein the cooling device is operated depending on the laser exposure, in particular depending on the temperature of the solid resulting from the laser exposure. It is especially preferred that the surface through which the solid is connected to the cooling device is located directly opposite the surface through which the laser beams penetrate the solid. This embodiment is advantageous because any temperature increase of the solid occurring during the production of the modifications can be limited or reduced.Preferably, the cooling device is operated in such a way that the heat input into the solid by the laser beams is extracted from the solid by the cooling device. This is advantageous because it significantly reduces the occurrence of thermally induced stresses or deformations.

[0025] According to a further preferred embodiment of the present invention, the cooling device comprises at least one sensor device for detecting the temperature of the solid and cools the solid depending on a predetermined temperature profile. This embodiment is advantageous because the sensor device allows for very precise detection of temperature changes in the solid. Preferably, the temperature change is used as data input for controlling the cooling device.

[0026] According to a further preferred embodiment of the present invention, the cooling device is coupled to a rotating device and the cooling device is rotated with the solid body arranged thereon during the modification production by means of the rotating device, in particular with more than 100 revolutions per minute or with more than 200 revolutions per minute or with more than 500 revolutions.

[0027] According to a further preferred embodiment of the present invention, the number of modifications generated per cm² differs in at least two different regions of the solid, wherein in a first region a first block of modification lines is generated, wherein the individual modifications per line are preferably generated spaced less than 10 µm apart, in particular less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm, and the individual lines of the first block are generated spaced less than 20 µm apart, in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm, wherein a first partial detachment region is formed by the first block of modifications, and in a second region a second block of modification lines is generated, wherein the individual modifications per line are preferably spaced less than 10 µm apart.in particular, the lines of the second block are generated spaced less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm apart, and the individual lines of the second block are generated spaced less than 20 µm apart, in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm apart, wherein a second partial detachment area is formed by the second block of modifications, wherein the first area and the second area are spaced apart from each other by a third area, wherein no or substantially no modifications are generated in the third area by means of laser beams, and the first area is spaced from the second area by more than 20 µm, in particular more than 50 µm or more than 100 µm or more than 150 µm or more than 200 µm. This embodiment is advantageous because the local generation of modification blocks allows for the creation of such large mechanical stresses in the solid body thatthat local cracking of the solid can occur. It was found that the modification blocks ensure that a crack is stably guided even in the area between two modification blocks. Thanks to the modification blocks, controlled and very precise crack propagation can be achieved with fewer modifications. This has significant advantages, as it reduces processing time, energy consumption, and the heating of the solid.

[0028] Preferably, the modifications in the first block are generated at pulse intervals between 0.01 µm and 10 µm and / or line spacings between 0.01 µm and 20 µm are provided and / or a pulse repetition frequency between 16kHz and 20 MHz is provided.

[0029] Further advantages, objectives, and features of the present invention are explained with reference to the accompanying drawings, which illustrate the separation process according to the invention by way of example. Components or elements that are preferably used in the process according to the invention and / or that correspond at least substantially with regard to their function in the figures may be identified by the same reference numerals, without these components or elements needing to be numbered or described in all figures.

[0030] It shows: Fig. 1 a solid during the treatment according to the invention and the two parts of the solid after they have been separated; Figs. 2a-2c microscopic images of crystal lattice modifications; Figs. 3a-3b further microscopic images of crystal lattice modifications; Figs. 4a-4b further microscopic images of crystal lattice modifications; Figs. 5a-5f schematic representations of modifications and the detachment zone; Figs. 6a-6d further schematic representation of modifications and the detachment zone; Figs. 7a-7d further schematic representation of modifications and the detachment zone; Fig. 8 a schematic representation of different modification concentrations; Figs. 9a-9c three schematic cross-sectional views, each showing modification blocks in a solid; Figs. 9d-9e two schematic representations of solids divided along the detachment zones, the representation according to Fig. 9dshows no traces of modification and the representation according to the Fig. 9eModification residues are shown; Fig. 10a-c shows three schematic representations of modification blocks and the resulting local solid weakenings or local solid cracks; Fig. 11a-c shows three schematic representations of exemplary crack propagations; Fig. 12a-c shows the multiple separation of solid components or solid layers, in particular wafers, from a solid; Fig. 13a-d shows several steps from the provision of the solid to crack initiation; Fig. 14a shows a schematic representation of the state after the solid component separation; Fig. 14 shows further laser treatment of the remaining solid to generate modifications for separating another solid layer; Fig. 14c shows a schematic representation of the remaining solid arranged on a cooling device, wherein the cooling device is arranged on a traversing device, in particular a rotary table; Fig. 14 shows a schematic representation of the generation of modifications in the solid; Fig.Fig. 15 a schematic representation of a cooling device, in particular a cooling chuck; Fig. 16 a schematic representation of a preferably used optic; and Fig. 17 a schematic representation of superimposed rays or ray components during the generation of a modification in the solid.

[0031] Reference numeral 1 here designates the solid body. According to the invention, modifications 9 are generated in the solid body 1 to form a detachment zone 2 at or along which the solid body 1 is separated into at least two components. The modifications 9 cause subcritical cracks, which create the detachment zone 2. The modifications 9 are generated by at least one laser beam 4. The laser beam 4 penetrates the preferably at least partially transparent solid body 1 via a preferably treated, in particular polished, surface 5. The at least one laser beam is preferably refracted at the surface 5, which is characterized by reference numeral 6. The at least one laser beam then forms a focus 8 for generating the modification. The polished surface 5 can also be referred to as the main surface 18 (cf. Fig. 3a ).

[0032] Reference numeral 10 designates a first solid fraction after the solid fraction 1 has been cut, and reference numeral 12 designates the second solid fraction after the solid fraction 1 has been cut. Reference numeral 11 further designates the surfaces along which the two solid fractions 10 and 12 were separated from each other. It is evident that the modifications 9 are substantially, predominantly, or completely present in the solid fraction 10, and that the solid fraction 12, after separation, preferably exhibits no or very few modifications, in particular less than 30 percent of the modifications produced. However, it is also conceivable that the modifications remain predominantly in the second solid fraction 12.

[0033] Figs. 2a to 2cshow different microscopic representations of a solid 1 conditioned or modified by means of a laser, in particular consisting mostly or essentially or completely of, for example, a semiconductor material, in particular of SiC.

[0034] In Fig. 2aA 6H-SiC line defect field 1E is shown, generated with pulse intervals of 0.4 µm, line spacings of 2 µm for line-generated crystal lattice modifications 20, 22, and a pulse repetition frequency of 128 kHz. However, it is also conceivable that one, several, or all of these parameters (pulse intervals, line spacings, pulse repetition frequency) could be varied or set differently. For example, the pulse intervals could be set between 0.01 µm and 10 µm, and / or the line spacings between 0.01 µm and 20 µm, and / or the pulse repetition frequency between 16 kHz and 1024 kHz.

[0035] In Fig. 2b is an enlarged detail view of the area defined by the frame in Fig. 2a The marked area is shown. It can be seen that the block spacings 24, 26 are preferably uniform and, for example, 66 µm. Fig. 2cThis also shows block spacing of approximately 66 µm. However, it is also conceivable that the block spacing lies in other ranges, such as between 4 µm and 1000 µm.

[0036] The presentation of Fig. 2a This shows a top view of a solid through a polished surface of the solid. The structure shown is thus formed within the solid or created by modification, in particular by means of a laser.

[0037] Cracking does not preferably occur in the configuration shown.

[0038] The Figures 3a and 3b show microscopic images of solids modified according to the invention. Fig. 3aReference numeral 14 preferably designates the location of a processing start, i.e., the location where the modification of the crystal lattice of the solid 1 preferably begins. Reference numeral 9 designates the modified region in the solid 1. It can be seen from this representation that a crack 13 propagates in the solid 1 off-center within the modified region 9, i.e., offset from the center 15 of the modified region 9. The location and direction of crack propagation 13 can be defined and specified by parameters for generating the modification, with the crack 13 in the example shown preferably running parallel or substantially parallel to the main surface 18. Thus, the crack 13 can be selectively generated, triggered, and guided through the modifications 9, at the edge of the modifications 9, or at a distance from the modifications 9 by setting the parameter(s).

[0039] The underside of the solid 1, in particular the wafer, is indicated by reference numeral 16. Furthermore, reference numeral 17 indicates a reference length, preferably 50 µm. The cross-sectional area shown extends perpendicular to the main surface 18 of the solid 1, i.e., over the height of the lateral surface 19, wherein the modifications 9 are preferably introduced into the solid 1 via the main surface 18, or the generation of the modifications 9 is preferably effected through the main surface 18. The main surface 18 is particularly preferably several times larger, in particular at least twice, at least three times, at least four times, at least ten times, at least twenty times, or at least fifty times, than the lateral surface 19.

[0040] Fig. 3aFigure 1 preferably shows a 6H-SiC line defect field 1C generated with pulse intervals of 0.2 µm, line spacings of line-generated crystal lattice modifications 20, 22 of 3 µm, and a pulse repetition frequency of 128 kHz. However, it is also conceivable that one, several, in particular two, or all of these parameters (pulse intervals, line spacings, pulse repetition frequency) are varied or set differently. For example, the pulse intervals can be set between 0.01 µm and 10 µm, and / or the line spacings between 0.01 µm and 20 µm, and / or the pulse repetition frequency between 16 kHz and 1024 kHz.

[0041] Fig. 3bFigure 1 shows a top view of a portion of the solid 1 and, looking through the polished main surface 18, of the modifications 9. According to this illustration, the individual modifications 9 are generated such that several of them form a line 20, 22. However, it is also conceivable that the modifications are generated homogeneously, at least partially, in more than one direction, particularly in two directions, in at least two directions, or in three directions. For example, the modifications 9 are preferably generated uniformly or homogeneously in a plane parallel to the main surface 18. However, it is also conceivable that more modifications 9 are generated in one direction (length, width, or height) than in one or two other directions. Furthermore, it is conceivable that the modifications 9 are generated in such a way that they form patterns.Furthermore, the modifications 9 according to the present invention can be produced in different numbers and / or with different parameters in different areas of the solid body 1, wherein the areas preferably have the same dimensions.

[0042] Reference numeral 17 indicates in Fig. 3b a reference length, preferably measuring 100 µm.

[0043] Fig. 4aFigure 1A preferably shows a 6H-SiC line defect field 1A generated with pulse intervals of 0.2 µm, line spacings of line-generated crystal lattice modifications 20, 22 of 1 µm, and a pulse repetition frequency of 128 kHz. However, it is also conceivable that one, several, in particular two, or all of these parameters (pulse intervals, line spacings, pulse repetition frequency) are varied or set differently. For example, the pulse intervals can be set between 0.01 µm and 10 µm, and / or the line spacings between 0.01 µm and 20 µm, and / or the pulse repetition frequency between 16 kHz and 1024 kHz.

[0044] Furthermore Fig. 4aIt can be deduced that a crack 13 propagates in the solid 1 at a distance from the generated modifications 9. The crack 13 thus propagates at a distance from the center of the modifications 9, or rather, the crack propagates in a region of the solid 1 that is at a distance from the main modification component. The main modification component is, for example in the case of laser-generated modifications 9, preferably the portion of the solid 1 in which the laser has its focus.

[0045] Reference numeral 17 indicates a reference length, preferably 100 µm.

[0046] The Figures 5a to 5f show different representations of the modification-crack generation relationship. Fig. 5aFigure 9 shows, for example, a modification shaped according to the form of a laser-cut waist. However, it should be noted that the shape of modification 9 is only shown schematically. Furthermore, shapes deviating from the one shown are also conceivable. For example, a modification 9 may preferably have a shape that lies in the design space between a spherical shape, in particular a circle, and a polygon, in particular a quadrilateral, in particular a rectangle, such as a square. Figure 9 also shows... Fig. 5a that the detachment area 2 does not extend through the center Z of the modification 9. Preferably, the detachment area 2 is spaced 1 / 20 or 1 / 10 or 1 / 5 or 1 / 4 or 1 / 3 or half the maximum length of the modification 9 from the center of the modification.

[0047] Fig. 5bFor example, one variant shows that the detachment area 2 runs past the modification 9 at the outer edge or in the area of ​​the outer edge of the modification 9, and that the modification therefore particularly preferentially only passes on the outside but does not run through the modification.

[0048] Fig. 5c Figure 1 shows another variant in which the detachment area 2 is preferably spaced at least 0.01 µm or at least 0.1 µm or at least 1 µm or at least 5 µm or at least 10 µm away from modification 9.

[0049] The Figures 5d to 5f are analogous to the Figures 5a to 5c built. The Figures 5d to 5e However, they show a variant according to which the effect achieved by modification 9, namely the local cutting of the crystal lattice of the solid 1, only arises through the interaction of several modifications 9, in particular at least 2, 5, 10, 20, 50 or at least 100 modifications.

[0050] The Figures 6a to 6d Figure 1 shows various arrangements of modifications 9 and the resulting separation areas 2. Depending on requirements, the parameters necessary to generate the modification can therefore be set such that the separation area 2 runs through the modifications 9 (see Figure 2). Figs. 6a and 6b ) or that the release zone is spaced apart from modifications 9. (cf. Fig. 6c-6d ).

[0051] The Figures 7a-7d Further variants are shown, according to which a detachment zone 2 forms as a result of the generation of modifications 9 in a solid 1. According to the Figures 7a and 7bThe centers of modifications 9 and 23 can be located on one side of the detachment area 2. However, it is conceivable that the modifications are generated identically except for their location (especially their distance from the main surface). Furthermore, it is conceivable that, in addition to or as an alternative to the location of modifications 9 and 23, the focus and / or the energy quantity and / or the exposure time, etc., change. In the Figures 7c to 7d The centers of modifications 9 and 23 are located on opposite sides of the release area 2.

[0052] It is conceivable that the centers of modifications 9 and 23 are formed at the same distance or at different distances from the detachment area 2. Furthermore, it is conceivable that, in addition to or as an alternative to the location of modifications 9 and 23, the focus and / or the amount of energy and / or the exposure time, etc., are changed or adjusted differently.

[0053] Fig. 8Figure 9 shows an arrangement in which the modifications are locally generated in different concentrations (AD) and / or distributions. For example, it is conceivable that locally different modification concentrations or distributions are provided to trigger a main crack connecting the individual cracks. Preferably, more modifications are generated in the area of ​​a main crack initiation point, or a higher modification density is provided.

[0054] It is further pointed out that the individual items in the Figures 5a-5f , 6a-6d , 7a-7d , 8 The variants shown can preferably be combined with each other.

[0055] Fig. 9aThis shows that the number of modifications generated per cm² differs in at least two different regions of the solid 1. In a first region, a first block 91 of modification lines is generated, wherein the individual modifications 9 per line are preferably generated at intervals of less than 10 µm, in particular less than 5 µm, less than 3 µm, less than 1 µm, or less than 0.5 µm. The individual lines of the first modification block 91 are preferably generated at intervals of less than 20 µm, in particular less than 15 µm, less than 10 µm, less than 5 µm, or less than 1 µm. The first block 91 of modifications generates mechanical stresses in the solid 1.

[0056] In a second area, a second block 92 of modification lines is generated, wherein the individual modifications 9 per line are preferably generated spaced less than 10 µm apart, in particular less than 5 µm, less than 3 µm, less than 1 µm, or less than 0.5 µm. The individual lines of the second block 92 are preferably generated spaced less than 20 µm apart, in particular less than 15 µm, less than 10 µm, less than 5 µm, or less than 1 µm. Mechanical stresses are generated in the solid 1 by the second block 92 of modifications 92.

[0057] The first region and the second region are separated from each other by a third region, wherein no or substantially no modifications 9 are produced in the third region by means of laser beams and the first region is separated from the second region by more than 20 µm, in particular more than 50 µm or more than 100 µm or more than 150 µm or more than 200 µm.

[0058] The modifications 9 are preferably introduced into the solid 1 via a surface 5 of the subsequent solid layer 12. The distance between the surface 5, through which the laser beams are introduced, and the modifications 9 is preferably less than the distance from the modifications 9 to a further surface 7 of the solid 1, which is spaced apart from the surface 5 and preferably aligned parallel to it.

[0059] It is evident that, according to this representation, the detachment area 2 lies, on the one hand, particularly in the longitudinal direction of the solid, below or above all modifications 9 and is preferably spaced apart from the modifications 9.

[0060] Fig. 9b shows a similar basic structure. According to Fig. 9b However, the replacement area 2 extends through modifications 9.

[0061] Furthermore, it shows Fig. 9c that the release zone 2 can also run through the center of modifications 9.

[0062] The course of the detachment area 2 can be adjusted, for example, by the number of modifications 9 and / or the size of the modifications 9 and / or the distance between the individual modifications 9 of a block 91, 92.

[0063] Fig. 9d shows the residual solid 1 after separation of the solid layer 12 along the in Fig. 9aDetachment area 2 shown. Since in this case the modifications 9 are completely removed from the residual solid 1, the residual solid 1 shows no residues of these modifications 9.

[0064] The Fig. 9e However, remnants of modification 9 can be extracted. These modification remnants result when the solid 1 is cut along one of the lines in the Figures 9b or 9cThe detachment areas 2 shown are separated. Furthermore, it can be seen that the modification blocks 91, 92 are preferably spaced apart from each other by fields 901, 902, 903 without modifications or with fewer modifications per cm². The fields without modifications 9 or with fewer modifications 9 can preferably be smaller or larger than the areas in which the modification blocks 91, 92 are generated. Preferably, at least one, several, or the majority of the areas in which the modification blocks 91, 92 are generated are several times larger, in particular at least 1.1 times, 1.5 times, 1.8 times, 2 times, 2.5 times, 3 times, or 4 times larger, than the areas in which no modifications 9 or fewer modifications 9 are generated.

[0065] The Figures 10a-10cFigure 1 shows a further embodiment of the present invention. According to these illustrations, the modification blocks 91, 92 serve to generate local material weakenings, local solid cracks, or local stress increases. Reference numeral 25 here designates a first partial detachment area or crack portion in which the local material weakenings, local solid cracks, or local stress increases occur, and reference numeral 27 here designates a second partial detachment area or crack portion in which the local material weakenings, local solid cracks, or local stress increases also occur. The individual partial detachment areas or crack portions preferably form ends 71, 72, beyond which the respective partial detachment area or crack portion can be enlarged.

[0066] The Figures 11a to 11cFigure 1 shows embodiments in which the progression of the detachment area 2 is controlled as a result of the generation of the modification blocks 91, 92, 93 such that predetermined patterns or thickness changes are generated or compensated. The progression of the detachment area 2 is adjustable, for example, by the number of modifications 9 and / or the size of the modifications and / or the spacing of the individual modifications 9 of a block 91, 92, 93.

[0067] In Fig. 11aThe detachment zone 2 is formed by the following components: crack 31 between the outer edge and the first modification block 91, followed by the first crack segment 25, which is directly generated by the first block 91 of modifications 9; followed by crack 32 between the two modification blocks 91 and 92; followed by the second crack segment 27, which is directly generated by the second block 92 of modifications 9; followed by crack 33 between the modification block 92 and the further outer edge of the solid body 1. It is thus evident that the detachment zone 2 can be defined such that a crack for separating the solid layer 12 from the solid body 1 can run section by section on different planes.

[0068] According to Fig. 11b It is evident that the detachment area 2 can be chosen such that the crack path contains several geometric inflection points.

[0069] Fig. 11c This shows, purely as an example, another possible design for the transfer fee area 2.

[0070] Regarding the Figures 11a-11c It should be noted that the formation of wavy profiles can offer advantages in the further treatment of the exposed surfaces, particularly in subsequent grinding and / or polishing steps. Due to the very small height of the modifications 9, the actual waviness generated by them can only be detected at very high resolution. However, by means of modification blocks, such as blocks 91, 92, and 93, the crack can be very well controlled, even in areas where no or fewer modifications 9 are generated.

[0071] The Figures 12a-12c show multiple processing of a solid body 1, in particular an ingot, wherein the solid body 1 is thinned by a solid fraction 12, in particular a solid layer 12.

[0072] The Figures 12a-12cThe figures thus show the application of laser radiation from the laser light source to the solid 1, wherein the laser beams penetrate the solid 1 via a surface 5, 502, 504 of the solid layer 12 to be separated. The laser radiation heats a predetermined portion of the solid 1 within its interior to a defined temperature, forming a detachment zone 2 or several partial detachment zones. The temperature generated in the predetermined portion of the solid 1 is preferably high enough that the material forming the predetermined portion undergoes modification 9 in the form of a predetermined material transformation. The number and arrangement of the modifications 9 are adjustable and are preferably predetermined.After the separation of the solid fraction 12, the remaining solid fraction 1 is again exposed to laser radiation from the laser light source. The laser radiation heats a predetermined portion of the remaining solid fraction 1 within its interior to a defined temperature to form a detachment zone 2. The temperature generated in this predetermined portion of the remaining solid fraction 1 is again high enough to cause the material forming this portion to undergo a predetermined chemical transformation. Thus, for example, solid fractions 12 of the same, similar, or different thicknesses, in particular solid layers 12, especially wafers, can be separated from a solid fraction 1.Preferably, the solid body 1 has a length such that a plurality, in particular more than 2, 5, 10, 20, 50, 100, 150, or 200, solid body layers 12 with a thickness of less than 1000 µm, in particular less than 800 µm, 500 µm, 300 µm, 200 µm, 150 µm, 110 µm, 75 µm, or 50 µm, can be separated from it. Preferably, after each separation of a solid body layer 12, the newly exposed surface 502, 504 of the remaining solid body 1 is machined.

[0073] Figures 13a-13f show schematic representations of different process situations that can occur according to the inventive method for producing solid layers 12.

[0074] Fig. 13ashows the provision of the solid body 1, in particular an ingot.

[0075] According to Fig. 13b The provided solid body 1 is arranged on a cooling device 3. Preferably, the cooling device 3 is a cooling chuck. Particularly preferably, the solid body 1 is coupled, glued, welded, screwed, or clamped to a tool holder (chuck), wherein the tool holder preferably includes a cooling function and thus preferably becomes the cooling device 3. The tool holder preferably consists of an alloy with a composition of 45%–60%, in particular 54%, iron, 20%–40%, in particular 29%, nickel, and 10%–30%, in particular 17%, cobalt. The percentages refer to the proportion of the total mass. An example of a preferred cooling device 3 is shown in Fig. 11The solid 1 and the cooling device 3 preferably have the same or a similar coefficient of thermal expansion. Similar coefficient of thermal expansion is preferably understood to mean any coefficient of thermal expansion for a temperature increase of 10°C within a temperature range of -200°C to 200°C, where the difference in the coefficients of thermal expansion of the solid 1 and the cooling device 3 is less than 50%, in particular less than 25% or less than 10%, of the coefficient of thermal expansion of the object expanding the most (cooling device or ingot). The coefficient of thermal expansion of the solid 1 is preferably less than 10 ppm / K, in particular less than 8 ppm / K or less than 5 ppm / K, such as less than 4 ppm / K, substantially 4 ppm / K, or exactly 4 ppm / K.

[0076] The solid body 1 is preferably fixed to the cooling device 3 in the longitudinal direction with its underside 7, which preferably lies longitudinally opposite the surface 5, in particular by gluing. The laser beams are thus introduced into the solid body 1 via the surface 5, which is part of the solid layer 12 to be separated, in the direction of the cooling device 3 to generate the modifications 9.

[0077] Fig. 13c Figure 1 schematically shows the generation of the modifications 9 using laser beams. The cooling device 3 ensures that the energy or heat introduced into the solid 1 by the laser beams is at least partially, and preferably predominantly, dissipated from the solid 1.

[0078] Fig. 13dFigure 1 shows a schematic cross-sectional view of the solid 1 during the generation of modifications 9. According to this example, four blocks of modifications 9 are identifiable, leading to the four crack segments 25, 27, 28, and 29. Adjacent to the blocks with modifications 9, reference numerals 41, 42, 43, 44, and 45 indicate areas without modifications 9 or areas in which fewer modifications 9 are generated than in the areas where the blocks of modifications 9 are generated. The overall crack preferably forms spontaneously as a result of the stresses generated by the generation of the partial cracks.

[0079] Fig. 14a shows a representation according to the in Fig. 13c laser exposure shown.

[0080] Fig. 14b shows a further step of introducing modifications 9 into the residual solid 1, which is reduced in length at least by the already separated solid layer 12.

[0081] Fig. 14c Figure 1 schematically shows another preferred embodiment. The cooling device 3 is coupled on one side to the solid body 1 and on the other side to a traversing device 30, in particular an X / Y traversing device or a rotary table. The traversing device 30 causes the solid body 1 to move, allowing it to be moved in a defined manner relative to its surroundings and a laser optic, in particular a scanner.

[0082] Fig. 14d shows a more detailed schematic representation of the Fig. 14cThe round arrow within the traversing device 30 indicates that it is rotatable. Furthermore, a coupling layer, in particular an adhesive layer, is provided between the solid body 1 and the cooling device 3. The coupling layer 30 is preferably designed to withstand a large number of processing cycles, in particular more than 200, 300, or 500 processing cycles, under high mechanical and thermal stress. It can also be seen from this illustration that the laser beam source 401 preferably directs laser beams along a first laser beam guide 402 to an optic 40, from where the laser beams reach a scanner via a further laser beam guide 403. Alternatively, however, it is also conceivable that at least the laser beam source 401 and the scanner 400 are provided.

[0083] Fig. 15Figure 3 shows the cooling device. The cooling device 3 preferably has a guide support structure, which is preferably formed by a tool carrier, in particular a chuck. The guide support structure preferably has a round basic shape. This is advantageous because imbalance can be more easily avoided with regard to spinning processes. Furthermore, the round basic shape is preferably provided with flattened sections 95-98. These flattened sections are advantageous because they allow or facilitate coarse alignment and / or cassetteting.

[0084] Preferably, the cooling device 3, and in particular its guide support structure, has good thermal conductivity. Furthermore, the cooling device 3 preferably comprises anodized aluminum, which reduces or prevents abrasion particles. This is advantageous because it increases cleanroom compatibility. Additionally, the chuck is preferably compatible with the removal process.

[0085] Furthermore, at least two alignment elements 65-68 are preferably provided. The alignment elements 65-68 are preferably designed as alignment holes, slots, or pins. The alignment elements 65-68 preferably form drivers for friction-fit and / or positive-fit rotational transmission. The alignment elements 65-68 preferably have steel or ceramic inserts, which results in high wear resistance. The alignment elements 65-68 preferably serve to couple the cooling device 3 with the traversing device 30.

[0086] Furthermore, dowel pins can be provided; these can be designed, for example, as hold-downs, thereby creating, for example, a force and / or form fit with the guide support structure.

[0087] Furthermore, a notch, groove, or marking 76 is preferably provided on the cooling device 3. This feature is advantageous because it makes the solid orientation, in particular the ingot orientation, apparent. Knowledge of the orientation of the solid, especially the ingot, can be used to adapt the modifications 9 produced by the laser beams to the crystallographic orientation.

[0088] Reference numeral 75 is used as an example to identify an optional data carrier element, data transmission element, and / or data acquisition element. Preferably, the element identified by reference numeral 75 is implemented as a barcode element, RFID element, and / or SAW sensor. This allows, in particular, integration into a Manufacturing Execution System (MES).

[0089] Furthermore, cooling channels for conveying a cooling fluid are preferably provided or formed on or within the guide support structure. The cooling channel(s) 78 can serve to regulate the temperature of the solid body 1, the cooling device 3, and / or a machine mount, in particular the traversing device 30. Cooling fluid, in particular a liquid, can be supplied to the cooling channel 78 via an inlet 77 and removed via an outlet 79. The interface or coupling layer between the solid body 1 and the cooling device 3 preferably has a high thermal conductivity, in particular corresponding to the thermal conductivity of the solid body 1 or the cooling device 3. The cooling device 3 can additionally or alternatively be cooled via the air interface. At high rotational speeds or traversing speeds of the traversing device 30, the air layer that forms around the cooling device 3 is very thin, which allows for very good heat dissipation.

[0090] Furthermore, active thermostatic control is preferably integrated into the MES. Additionally or alternatively, process monitoring is performed for different substrate sizes and thicknesses.

[0091] Preferably, the fluid channels are sealed by pressing them together when the bearing is fixed, and by means of, for example, a central ring seal when rotating.

[0092] Reference numeral 69 designates an optional sensor device, preferably configured as a temperature sensor. Preferably, the sensor device is a SAW temperature sensor.

[0093] Fig. 16Figure 1 shows the optics 40, 608 preferably used to generate the modifications 9. Thus, the method according to the invention preferably also includes the step of providing optics 40, 608, wherein the optics 608 preferably has at least two deflecting elements 610, 612 for deflecting light beam components 616, 618. The light beams 616, 618 are preferably generated and emitted by the laser beam source 401.Furthermore, the method according to the invention preferably comprises the step of deflecting at least two different light beam components 616, 618 of the emitted light beam 606 by means of the deflecting elements 610, 612, 613, wherein the light beam components 616, 618 are deflected such that they penetrate the solid body 1 and wherein the different deflected light beam components 616, 618 meet in a focus 620 within the solid body 1 and the physical modification 9, in particular in the form of a grating defect, is generated by the light beam components 616, 618 meeting in the focus 620 or the step of generating and emitting at least two light beams 606 by the laser beam source or radiation source arrangement 401.Furthermore, the method according to the invention preferably comprises the step of deflecting the light rays 606 by means of the deflecting elements 610, 612, 613, wherein the light rays 606 are deflected in such a way that they penetrate into the solid body 1 and wherein the different deflected light rays 606 meet in a focus 620 within the solid body 1 and the physical modification 9, in particular in the form of a lattice defect, is produced by the light rays 6 meeting in the focus 620.

[0094] Additionally, it is conceivable that at least two different light ray components 616, 618 of at least one emitted light ray 606, in particular the light ray components of several emitted light rays, or the several emitted light rays 606 are deflected by means of the deflecting elements 610, 612, 613, wherein the light ray components 616, 618 or the light rays 606 are deflected in such a way that they penetrate the solid 1 and wherein the different deflected light ray components 616, 618 or the different deflected light rays 606 meet in a focus 620 within the solid 1 and the physical modification 9, in particular in the form of a lattice defect, is produced by the light ray components 616, 618 or light rays 606 meeting in the focus 620.

[0095] Furthermore, according to the inventive method, in the case of several simultaneously generated light beams 606, at least two light beams 606 and preferably all light beams 606 can be divided into light beam components 616, 618 which travel different paths and penetrate the solid body 1 at spaced-apart surface portions 622, 624, wherein the light beam components 616, 618 of a respective light beam are deflected by means of different deflecting elements 610, 612, 613.

[0096] The optics 608 preferably comprises at least one light beam splitting means 633, in particular a half-mirror or beam splitter, and at least one light beam 606 is split into at least two light beam components 616, 618 by means of at least the light beam splitting means 633. Preferably, one light beam 606 is split into at least two light beam components 616, 618 by means of a light beam splitting means 633, in particular a half-mirror, wherein one light beam component 616 is deflected by means of at least two deflecting elements 610, 612, 613, in particular mirrors, such that it meets the other light beam component 618 inside the solid 1 to form a focus 620 to produce the physical modification 9. Particularly preferred is the creation of a large number of physical modifications 9, wherein the physical modifications 9 preferably form or describe a plane and / or a contour and / or a silhouette and / or the outer shape of a body.

[0097] The at least one light beam 606 emitted by the laser beam source 401 preferably consists of coherent light and the light waves of the light beam components 616, 618 meeting at the focus 620 preferably have the same phase and the same frequency.

[0098] Particularly preferably, at least one light ray component 616, 618 or at least one light ray 606 is deflected and focused by a deflecting element 610, 612, 613 designed as a parabolic mirror.

[0099] Furthermore, the at least one light beam component 616, 618 or the at least one light beam 606 preferably passes through a deflection element 610, 612, 613, in particular the parabolic mirror, a beam shaping device, in particular a 1D telescope, to change the focus shape before deflection and focusing.

[0100] The laser beam source 401 preferably generates at least or exactly two light beams, wherein the light beams 606 are generated with different colors depending on the band gap of the material of the solid 1, such that the modification 9 is generated by a two-photon process.

[0101] Preferably, a first laser field is formed by a first light beam 606, wherein the first light beam 606 has photons with a first energy, and a second laser field is preferably formed by a second light beam 606, wherein the second laser beam 606 has photons with a second energy, wherein the first laser field is weaker than the second laser field and the first energy is greater than the second energy.

[0102] Fig. 17Figure 1 shows the generation of the modifications using two laser beams or two laser beam components in a schematic representation. The modifications 9 preferably have a vertical extent of less than 50 µm, more preferably less than 30 µm, and most preferably less than 20 µm.

[0103] The focus 620 is preferably less than 1000 µm, preferably less than 500 µm, and particularly preferably less than 200 µm away from an intrusion surface 626 of the solid 1, wherein at least individual light beam components 616, 618 penetrate the solid 1 via the intrusion surface 626 to generate the physical modification 9.

[0104] The focus 620 is preferably generated in a superposition component of at least two intersecting light beam waists 630, 632, wherein the light beam waists 630, 632 are generated by the light beam components 616, 618 or light beams 606.

[0105] Thus, a method for generating a detachment region in a solid, in particular for dividing the solid along the detachment region, is described, wherein the solid portion to be detached is thinner than the solid reduced by the solid portion, comprising at least the steps of: modifying the crystal lattice of the solid by means of a modifier, in particular by means of at least one laser, in particular a pico- or femtosecond laser, wherein the modifications, in particular the laser beams, penetrate the solid via a surface of the solid portion to be detached, wherein several modifications are generated in the crystal lattice, wherein the crystal lattice tears in at least one portion in the regions surrounding the modifications as a result of the modifications.

[0106] Furthermore, a method for generating a detachment region (2) in a solid (1), in particular for dividing the solid (1) along the detachment region (2), is described, comprising at least the steps of: modifying the crystal lattice of the solid (1) by means of a modifier, in particular by means of at least one laser, in particular a pico- or femtosecond laser, wherein several modifications (9) are generated in the crystal lattice, wherein the crystal lattice, as a result of the modifications (9), breaks down in at least one proportion in the regions surrounding the modifications (9).

[0107] Further basis for the patent claims and further aspects of this disclosure are as follows: 1. A method for generating a detachment region (2) in a solid (1), in particular for dividing the solid (1) along the detachment region (2), wherein the solid portion (12) to be detached is thinner than the solid (1) reduced by the solid portion (12), comprising at least the steps of: modifying the crystal lattice of the solid (1) by means of a modifier, in particular by means of at least one laser, in particular a pico- or femtosecond laser, wherein the modifications, in particular the laser beams, penetrate the solid (1) via a surface (5) of the solid portion (12) to be detached, wherein several modifications (9) are generated in the crystal lattice, wherein the crystal lattice, as a result of the modifications (9), is fractured in at least one portion in the regions surrounding the modifications (9). 2. A method for generating a detachment region (2) in a solid (1),in particular for dividing the solid (1) along the detachment area (2), comprising at least the following steps: modifying the crystal lattice of the solid (1) by means of an application of a modifier, in particular by means of at least one laser, in particular a pico- or femtosecond laser, wherein several modifications (9) are generated in the crystal lattice; conditioning at least several of the modifications (9) by means of a conditioning agent, in particular a temperature control device, wherein the crystal lattice tears in at least a proportion in the regions surrounding the modification as a result of the conditioning. 3. Method according to paragraph 1 or paragraph 2, characterized in that the crystal lattice tears at least predominantly in a proportion spaced away from the center (Z) of the respective modification (9). 4. Method according to paragraph 3, characterized in thatthat the crack (13) extends at least section by section through the majority of the modifications (9). 5. Method according to paragraph 3, characterized in that the crack (13) extends at least at a distance from the majority of the modifications (9). 6. Method according to any one of paragraphs 3 to 5, characterized in that a first number of modifications (9) are generated with their center (Z) on one side of the detachment area (2) and a second number of modifications (9) are generated with their center (Z) on the other side of the detachment area (2). 7. Method according to any one of the preceding paragraphs, characterized in that the modifications are generated by means of a laser, wherein the pulse intervals are provided between 0.01 µm and 10 µm and / or line spacings are provided between 0.01 µm and 20 µm and / or a pulse repetition frequency is provided between 16 kHz and 1024 kHz. 8. A procedure according to one of the preceding numbers, characterized by,that the solid (1) is connected to a cooling device (3) via a solid surface (7), wherein the solid surface (7) connected to the cooling device (3) is parallel or substantially parallel to the surface (5) through which the laser beams penetrate the solid (1), and wherein the cooling device (3) is operated depending on the laser exposure, in particular depending on the temperature of the solid (1) resulting from the laser exposure. 9. Method according to paragraph 8, characterized in that the cooling device (3) has at least one sensor device (69) for detecting the temperature of the solid (1) and causes the cooling of the solid (1) depending on a predetermined temperature profile. 10. Method according to one of paragraphs 8 or 9, characterized in thatthat the cooling device (3) is coupled to a rotating device (30) and the cooling device (3) with the solid body (1) arranged thereon is rotated during the modification production by means of the rotating device (30), in particular with more than 100 revolutions per minute or with more than 200 revolutions per minute or with more than 500 revolutions. 11. Method according to one of the preceding digits, characterized in that in at least two different regions of the solid (1) the number of generated modifications (9) per cm² is different, wherein in a first region a first block (91) of modification lines is generated, wherein the individual modifications (9) per line are preferably generated less than 10 µm, in particular less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm, and the individual lines of the first block (91) are less than 20 µm apart.in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm, are generated apart from each other, wherein the first block (91) of modifications (9) forms a first partial detachment area (25) and a second block (92) of modification lines is generated in a second area, wherein the individual modifications (9) per line are preferably generated less than 10 µm, in particular less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm, and the individual lines of the second block (92) are generated less than 20 µm, in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm, wherein the second block (92) of modifications (9) second partial replacement area (27) is formed, wherein the first area and the second area are separated from each other by a third area,wherein in the third area no or substantially no modifications or fewer modifications per cm² are generated by laser beams compared to the first or second area, and the first area is spaced from the second area by more than 20 µm, in particular more than 50 µm or more than 100 µm or more than 150 µm or more than 200 µm. 12. Method according to paragraph 11, characterized in that the modifications (9) are generated at least in the first block (91) and in the second block (92) at pulse intervals between 0.01 µm and 10 µm and / or line spacings between 0.01 µm and 20 µm are provided and / or a pulse repetition frequency between 16 kHz and 20 MHz is provided. 13. Method for at least partially dividing a solid (1) comprising one of the items of numbers 1 to 10, characterized in that so many modifications (9) are produced in the crystal lattice that the individual cracks combine to form a principal crack,by which the solid (1) is at least partially and preferably completely divided. 14. Method for at least partially dividing a solid, comprising one of the items of digits 1 to 10, characterized in that the modifications (9) are produced in a first section of the solid (1), whereby a principal crack extending through the individual cracks is formed, wherein, after the formation of the principal crack or as a result of the formation of the principal crack, further modifications are produced in at least one further section of the solid (1), wherein the principal crack is also extended into the at least one further section by further cracks resulting from the further modifications (9). 15. Method according to one of the preceding digits, characterized in that, after the separation of the solid portion (12), the remaining solid (1) is again subjected to laser radiation from the laser light source.wherein the laser radiation heats a predetermined portion of the residual solid (1) within the solid (1) to a defined temperature to form a detachment zone (2), and the temperature generated in the predetermined portion of the solid (1) is so high that the material forming the predetermined portion undergoes a predetermined material transformation or several modifications (9) are successively generated in the crystal lattice by the laser exposure, wherein the crystal lattice cracks in at least a portion of the regions surrounding the modifications (9) as a result of the modifications (9), wherein the detachment zone (2) is defined by the cracks in the region of the modifications (9) or several partial detachment zones (25, 27, 28, 29) are defined. Reference symbol list: 1 Solids 30 Rotary table 2 Replacement area 31 Crack between outer edge and first modification block 4 laser beam 5 Polished surface 32 Crack between two modification blocks 6 Laser beam in solid 33 Crack between modification block and another modification block or outer edge 8 focus 9 modification 10 First solid part 34 Crack between modification block and outer edge 12 Second solid part 13 crack 40 optics 14 Location of processing start 41 first area without modification block 15 Center of the modifications 42 second area without 16 Underside of the solid Modification block 17 Reference length 43 third area without 18 Main surface Modification block 19 Side surface 44 fourth area without modification block 20 Line spacing between line-generated crystal lattice modifications 45 fifth area without modification block 22 Line spacing between line-generated crystal lattice modifications 51 unaltered substance 52 altered material 53 Raman spectrum 23 Further modification 54 Intensity in % 25 first part of the crack 56 Wavelength in cm -1< 27 second crack component 61 Graph showing the unchanged proportion of the substance 28 third crack component 29 fourth crack component 62 Graph showing the changing proportion of a substance 403 additional laser beam guide 65 first alignment element 501 Exposed surface of the first solid layer 66 second alignment element 67 third alignment element 502 Laser penetration surface of the second solid layer 68 fourth alignment element 503 Exposed surface of the second 69 Sensor means Solid layer 75 Data carrier element and / or data transmission element 504 Laser penetration surface of the third solid layer 76 Nut 505 Exposed surface of the third 77 Fluid inlet Solid layer 78 Fluid line 606 beam of light 79 Fluid outlet 608 optics 80 Guiding and supporting structure 610 first deflection element 71 first end of a crack segment 612 second deflection element 72 second end of a crack segment 613 third deflection element 91 first block of modifications 616 first light ray component 92 second block of modifications 618 second light beam component 112 second solid layer 620 focus 113 third solid layer 622 first surface area 300 coupling layer 624 second surface area 630 Light beam waist 630 Light beam waist 632 Light beam waist 632 Light beam waist 400 scanner 901 first field without modifications 401 Laser beam source 902 second field without modifications 402 Laser beam guide 903 third field without modifications A Example of a first defect arrangement B Example of a second defect arrangement C Example of a third defect arrangement D Example of a fourth defect arrangement Z center

Claims

1. Method for producing a detachment region (2) in a solid (1), the solid (1) being an ingot or a wafer which has a crystal lattice and is at least partially transparent to laser beams emitted by a laser, comprising: modifying the crystal lattice of the solid (1) by means of the laser beams, wherein the laser beams penetrate into the solid (1) through a main surface (5, 18) of a portion (12) of the solid that is to be detached, wherein multiple modifications (9) are produced in the crystal lattice, wherein the modifications (9) are formed in a plane parallel to the main surface (5) and at a distance from one another, wherein, as a result of the modifications (9), the crystal lattice cracks in regions surrounding the modifications (9), at least in one portion in each case, wherein subcritical cracks propagate in a plane parallel to the main surface (5).

2. Method according to Claim 1, wherein the crack (13) passes at least partly through the majority of the modifications (9).

3. Method according to Claim 1, wherein the crystal lattice cracks at least for the most part in a portion spaced apart from the centre (Z) of the respective modification (9).

4. Method according to Claim 3, wherein the crack (13) runs at a distance from at least the majority of the modifications (9).

5. Method according to one of Claims 2 to 4, wherein a first number of modifications (9) are produced with their centre (Z) on one side of the detachment region (2) and a second number of modifications (9) are produced with their centre (Z) on the other side of the detachment region (2).

6. Method according to one of the preceding claims, wherein the modifications are produced by means of pulsed laser radiation with pulse intervals of between 0.01 µm and 10 µm and / or with a pulse repetition frequency of between 16 kHz and 1024 kHz and / or are formed with line spacings of between 0.01 µm and 20 µm.

7. Method according to one of the preceding claims, wherein the solid (1) is connected to a cooling device (3) by means of a surface (7) of the solid, wherein the surface (7) of the solid that is connected to the cooling device (3) is formed parallel or substantially parallel to the main surface (5) via which the laser beams penetrate into the solid (1), wherein the cooling device (3) is operated in dependence on the exposure to the laser, in particular in dependence on the temperature adjustment of the solid (1) resulting from the exposure to the laser.

8. Method according to Claim 7, wherein the cooling device (3) has at least one sensor device (69) for detecting the temperature of the solid (1) and brings about a cooling of the solid (1) in dependence on a predetermined temperature profile.

9. Method according to either of Claims 7 or 8, wherein the cooling device (3) is coupled to a rotating device (30) and, during the production of the modifications, the cooling device (3) with the solid (1) arranged on it is rotated by means of the rotating device (30), in particular is rotated at more than 100 revolutions per minute or at more than 200 revolutions per minute or more than 500 revolutions.

10. Method according to one of the preceding claims, wherein, in at least two different regions of the solid (1), the number of modifications (9) produced per cm2 is different, wherein, in a first region, a first block (91) of modification lines is produced, wherein the individual modifications (9) per line (20, 22) are produced preferably spaced apart from one another by less than 10 µm, in particular less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm, wherein the lines of the first block (91) are produced spaced apart from one another by less than 20 µm, in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm, wherein a first partial detachment region (25) is formed by the first block (91) of modifications (9) and wherein, in a second region, a second block (92) of modification lines is produced, wherein the individual modifications (9) per line are produced preferably spaced apart from one another by less than 10 µm, in particular less than 5 µm or less than 3 µm or less than 1 µm or less than 0.5 µm, wherein the lines of the second block (92) are produced spaced apart from one another by less than 20 µm, in particular less than 15 µm or less than 10 µm or less than 5 µm or less than 1 µm, wherein a second partial detachment region (27) is formed by the second block (92) of modifications (9), wherein the first region and the second region are spaced apart from one another by a third region, wherein, in the third region, no or substantially no modifications or fewer modifications per cm2 compared with the first or second region are produced by means of laser beams and wherein the first region is spaced apart from the second region by more than 20 µm, in particular more than 50 µm or more than 100 µm or more than 150 µm or more than 200 µm.

11. Method according to Claim 10, characterized in that the modifications (9) at least in the first block (91) and in the second block (92) are produced by means of pulsed laser radiation with pulse intervals of between 0.01 µm and 10 µm and / or a pulse repetition frequency of between 16 kHz and 20 MHz and the modifications (9) are formed with line spacings of between 0.01 µm and 20 µm.

12. Method for at least partially splitting a solid (1), comprising the method according to one of Claims 1 to 9, wherein enough modifications (9) are produced in the crystal lattice for the individual cracks to combine to form a main crack through which the solid (1) is at least partially and preferably completely split.

13. Method for at least partially splitting a solid (1), comprising the method according to one of Claims 1 to 9, wherein the modifications (9) are produced in a first portion of the solid (1), with the result that a main crack extending through the individual cracks is formed, wherein, after the formation of the main crack or as a result of the formation of the main crack, further modifications are produced in at least one further portion of the solid (1), wherein the main crack is led likewise into the at least one further portion by further cracks resulting from the further modifications (9).

14. Method according to one of the preceding claims, wherein, after the separation of the portion (12) of the solid, the remaining solid (1) is subjected to renewed exposure to LASER radiation from the LASER light source, wherein the LASER radiation adjusts the temperature of a predetermined portion of the remaining solid (1) in the interior of the solid (1) in a defined manner to form a detachment region (2), and the temperature established in the predetermined portion of the solid (1) is high enough that the material forming the predetermined portion undergoes a predetermined material conversion, or as a result of the laser exposure, multiple modifications (9) are produced successively in the crystal lattice, wherein, as a result of the modifications (9), the crystal lattice cracks in the regions surrounding the modifications (9), at least in one portion in each case, wherein the detachment region (2) is predetermined by the cracks in the region of the modifications (9) or multiple partial detachment regions (25, 27, 28, 29) are predetermined.