METHOD FOR CONTROLLING ENERGY DISTRIBUTION INTRODUCED WITHIN A SUBSTRATE BY MEANS OF A LINE FOCUS OF A LASER BEAM

Description

[0001] The present invention relates to a method for controlling an energy distribution introduced within a substrate by means of at least one line focus of at least one laser beam and to a substrate. State of the art

[0002] To separate a substrate along a parting line, laser-based methods are known from the prior art. These methods allow curved side surfaces to be formed on the separated substrate parts by introducing modifications into the substrate or removing material from it along the planned parting line using a curved laser line focus. The separation then takes place along the introduced defects.

[0003] However, these separation surfaces have the disadvantage that they are not symmetrical.

[0004] US 10,010,971 B1 (disclosing the preamble of claim 1) relates to systems and methods for laser processing of materials.

[0005] US Patent 10,882,143 B2 relates to diffractive optical elements used in optical systems for shaping a laser beam, and in particular for shaping a laser beam to process materials that are essentially transparent to the laser beam. It also relates to a system and a method for laser material processing.

[0006] US Patent 10,661,384 B2 relates to an optical system for shaping a laser beam, and in particular to shaping a laser beam for processing materials that are essentially transparent to the laser beam. It also relates to a method for beam shaping.

[0007] US 2020 / 254567 A1 concerns devices and methods for laser processing of workpieces and in particular the selective laser processing of stacks of workpieces with multiple workpieces.

[0008] US Patent 2020 / 361037 A1 relates to devices and methods for laser processing of transparent workpieces, and in particular to laser beams with laser beam focal lines that are quasi-non-diffractive and retain a quasi-non-diffractive character when directed at a transparent workpiece at a non-normal angle of incidence. It is therefore an object of the present invention to provide means that enable the reliable formation of a curved parting line of a substrate with high symmetry. Furthermore, it is an object of the present invention to provide a substrate with a symmetrical side surface. Description of the invention

[0009] According to a first aspect of the invention, a method for controlling an energy distribution introduced within a substrate by means of at least one line focus of at least one laser beam is defined in claim 1, wherein the method comprises: forming the line focus at least partially within the substrate and controlling the energy distribution within the substrate at least partially by influencing the laser beam by means of at least one phase mask, and wherein the influencing of the laser beam is carried out in a time-dependent manner and thereby the shape and / or position of the energy distribution is changed in a time-dependent manner.

[0010] The invention is thus based on the surprising finding that by deposing the laser pulse energy around the vertex of a curved line focus, a curved modification of the substrate material along the thickness range of the substrate can be reliably achieved. In particular, the method according to the invention can achieve a modification in the substrate material that is symmetrical around the vertex.

[0011] It was primarily recognized that the distribution of laser energy deposited in the substrate material, and thus the energy distribution within the material, can be controlled particularly reliably and yet simply using a phase mask. More precisely, by appropriately influencing the laser beam with the phase mask, it was surprisingly discovered that the effect of shifting the intensity distribution of the line focus along the trajectory of the laser focus in a vacuum or air is suitable for controlling the distribution of energy deposited in the material and thus improving the modification of the material. In this way, the location, and especially the center of gravity, of the material damage can be determined along the focus trajectory, and the material damage can be placed at a desired location along the line focus.

[0012] Conventionally, the laser pulse energy is deposited along the focus trajectory at its apex. To achieve sufficient modification across the entire thickness range of a substrate, the focus of the laser beam (e.g., an Airy beam), and thus also the apex of the line focus (especially a curved one), had to be shifted towards one of the two end faces of the substrate to be separated, in order to advantageously position the energy deposition centrally within the thickness range of the substrate.

[0013] In other words, since previously more energy was deposited above the apex, i.e., towards the upper surface of the substrate, particularly the one facing the laser source, the apex of the line focus had to be moved closer to the lower surface to advantageously position the energy deposition centrally within the depth region of the substrate. Otherwise, the lower region would be insufficiently, or at least less, modified.

[0014] Accordingly, the separated substrate parts conventionally have a side surface whose course is not symmetrical, but where the vertex is shifted towards one of the two top surfaces.

[0015] In one embodiment, for example, the substrate material can be modified by influencing it directly or indirectly through at least part of the energy introduced into the substrate material, particularly through the line focus. More precisely, the electromagnetic field of the laser will cause a portion of the laser pulse energy to be introduced into the substrate material and deposited there in a distribution dependent on the beam geometry, laser parameters, and substrate material parameters.

[0016] The invention therefore generally makes it possible to control the energy distribution generated in the material by the line focus by spatially shifting the energy distribution through the influence of a phase mask on the laser beam.

[0017] In one embodiment, controlling the energy distribution involves controlling the spatial extent and / or the center of gravity of the energy distribution.

[0018] This method is therefore particularly advantageous in the context of surface structuring. This is because the method makes it possible to place the energy distribution along the line focus at a desired position within the substrate.

[0019] Thus, by means of curved modification (including a curved area from which material has been removed or displaced) created in the substrate material by a curved line focus, the curvature of the planned parting line can also be influenced or determined, and consequently the curvature of the side surface of the substrate parts after separation. By appropriately manipulating the laser beam during the material modification, a symmetrical curvature profile of the side surface of the substrate parts can be achieved.

[0020] The proposed method therefore preferably further comprises introducing at least one modification into the material of a substrate region along the formed and energy-distributed controlled line focus and / or separating the substrate along a separation surface defined by a plurality of such modifications. A modification may, for example, include a change in the density, refractive index, stress values, mechanical integrity, and / or the etch rate (particularly acidic or alkaline) of the substrate material. A modification may also, for example, include removing substrate material from the substrate, displacing substrate material (particularly compacting substrate material into the surrounding substrate), and / or generating microcracks.

[0021] By choosing the orientation of the curvature of the line focus such that the course of the curvature, in particular the acceleration direction of the curvature, does not run parallel to and / or perpendicular to the main extension direction of the planned parting surface, the curvature of the parting surface and thus that of the side surfaces of the substrate parts can be influenced or determined by the curvature of the line focus.

[0022] Therefore, in one embodiment it is preferred that the curvature does not run parallel to the planned dividing line, but for example perpendicular to it.

[0023] In one embodiment, the curvature of the side surface of a divided substrate part is preferably determined by the alignment of the line focus, in particular the orientation of the curvature, within the substrate, especially the curvature along a direction perpendicular to the main extension direction of the side surface.

[0024] The invention thus makes it possible for the first time to achieve a symmetrical profile of a curved parting line immediately after the parting process by means of the modified substrate areas, in particular without post-processing steps such as polishing for the purpose of edge forming, and especially also with very thick substrates, i.e. substrates with a thickness of more than 500 µm. This can be achieved by positioning the energy distribution around the apex of the focus trajectory.

[0025] The observed deposition of the laser pulse energy at a position shifted from the vertex along the focus trajectory can be compensated for by influencing it with the phase mask. This results in a symmetrical material modification. Furthermore, this method allows for a particularly reliable and uniform material modification that extends completely through the material.

[0026] The energy distribution can therefore be introduced into the substrate material by means of the line focus. In other words, energy can be spatially distributed and deposited in the substrate by means of the line focus, and this distributed energy is controlled according to the invention.

[0027] This makes it possible to achieve a symmetrical separation surface. This applies to thin substrate thicknesses, for example, from 10 µm and / or up to 500 µm. It also applies equally to substrate thicknesses of 500 µm or greater, for example, a substrate thickness of 525 µm. For example, the substrate can have a thickness of 700 µm or more, 1 mm or more, 3 mm or more, 5 mm or more, or even 7 mm or more.

[0028] The solution according to the invention therefore makes it possible, among other things, to flexibly adjust the position of the energy distribution, in particular relative to the apex of the focus trajectory, and thus the position and shape of the modification generated in the substrate material.

[0029] In one embodiment, the thickness of the substrate material is measured between the two main sides of the substrate.

[0030] Preferably the substrate is transparent, in particular to the wavelength of the laser beam, preferably in the visible wavelength range, in the IR wavelength range and / or in the UV wavelength range.

[0031] Preferably, the substrate is made of or contains a glass material. Alternatively or additionally, the substrate may also contain or consist of glass ceramic, silicon, sapphire and / or quartz glass.

[0032] The line focus is preferably a curved line focus. Alternatively or additionally, the line focus is a focus of an Airy beam. Preferably, the line focus is alternatively or additionally a focus of a laser beam of a pulsed laser, in particular an ultrashort pulsed laser with pulse widths of 10 ps or less, preferably 5 ps or less, preferably 3 ps or less, preferably 1 ps or less, preferably 0.5 ps or less.

[0033] The phase mask phase-modulates the laser beam.

[0034] The phase mask preferably influences the laser by imposing an additional, non-constant optical phase on the laser beam through laterally resolved changes in the optical path length.

[0035] The phase mask can be realized, for example, as freeform optics, as a diffractive optical element (DOE), as an acousto-optic modulator (AOM), or as a liquid crystal on silicon spatial light modulator (LCOS-SLM).

[0036] However, the phase mask can also be realized wholly or partially by means of other elements that enable a defined phase change.

[0037] In one embodiment, a DOE is used as a phase mask.

[0038] This method is therefore particularly well suited for separating and structuring the surfaces of substrates, especially glass substrates. For example, the method is particularly well suited for preparing and / or carrying out the separation of such substrates into substrate parts.

[0039] According to the invention, the influencing of the laser beam is a dynamic influencing process. "Dynamic influencing" is understood, for example, to mean a time-dependent characteristic of the line focus in the substrate, for example, with regard to the spatial orientation, position, and / or spatial extent, occurring during and / or as a result of controlling the energy distribution within the substrate, and in particular, during and / or as a result of influencing the laser beam. In other words, the characteristic of the line focus changes at least temporarily during the controlling and / or influencing and / or modifying of the substrate.

[0040] For example, to dynamically influence the laser beam, the laser beam can be influenced by means of at least one phase mask, in particular the offset of the laser beam on the phase mask, in a time-dependent manner, preferably for a constant or variable pulse energy and / or pulse duration of the laser.

[0041] Alternatively or additionally, it can also be provided that the at least one phase mask is a phase mask with a cubic phase distribution or a phase distribution of a higher, in particular odd, order and / or that the phase mask is arranged in the beam path of the laser beam in front of the substrate, and in particular that the laser beam, preferably the center of gravity of the beam cross-section existing in the plane of the phase mask, has an impact point on the phase mask.

[0042] A cubic phase mask is easy to set up and reliably provides the ability to control energy distribution.

[0043] A phase mask with odd order (for orders greater than or equal to 3) is advantageous because a lateral displacement of the input beam on the optics in a constant direction can achieve a displacement of the center of gravity of the energy distribution of the focus (and thus the energy distribution in the substrate) in a constant direction along the trajectory and / or propagation direction of the laser beam.

[0044] Alternatively or additionally, the formation of the line focus may also include setting the position of the vertex of the, in particular curved, line focus along a depth range, preferably a thickness range, of the substrate, and wherein the position of the vertex of the line focus is preferably set (i) centrally along the depth range of the substrate, and / or (ii) at a distance, in particular vertical, from the central position along the depth range of the substrate, in particular the distance, in particular vertical, along the depth range (a) more than 0.1%, preferably more than 1%, preferably more than 5%, preferably more than 10%, preferably more than 20%, preferably more than 30%, preferably more than 40%, preferably more than 45% of the thickness of the substrate, (b) less than 50%, preferably less than 45%, preferably less than 35%, preferably less than 25%.preferably less than 15%, preferably less than 10%, preferably less than 5%, preferably less than 3%, preferably less than 1% of the thickness of the substrate and / or (c) between 0.1% and 49%, preferably between 0.1% and 10% or between 1% and 40%, preferably between 5% and 30%, preferably between 10% and 25% of the thickness of the substrate.

[0045] By positioning the vertex of the curved line focus appropriately in the center, the trajectory of the line focus extends symmetrically around the central plane of the substrate. This opens up the possibility of introducing a modification into the substrate that extends symmetrically around the central plane of the substrate.

[0046] This allows a modification to be introduced into the substrate that extends symmetrically around the central plane of the substrate, for example by also positioning the energy distribution symmetrically around the vertex through suitable influence with the phase mask.

[0047] However, positioning the vertex off-center can also be preferable to achieve the desired contours in the substrate. In this case, it can be advantageous to measure the distance as follows: A (hypothetical) central position of the vertex along the depth range of the substrate is determined, as is the desired position along the same depth range. The difference between these two positions represents the distance. If the depth range is perpendicular to the substrate's surface, this is also the vertical distance. Any offset of the vertex in a direction perpendicular to the surface, i.e., horizontally, as can occur with a curved line focus, is therefore irrelevant, at least for the vertical distance.

[0048] One direction "along the depth region" preferably runs perpendicular to at least one of the substrate's top surfaces, in particular perpendicular to the substrate's top surface facing the laser source.

[0049] Each of the described positionings of the line focus, and thus its vertex, can be achieved, for example, by varying the distance between the focusing optics and the substrate. This can be accomplished, for instance, by translating the substrate and / or the focusing optics along the beam propagation direction. The focusing optics are preferably used to focus the laser beam onto the substrate.

[0050] Alternatively or additionally, the positioning of the line focus, and thus its vertex, can be achieved by adjusting the focal length of the system, preferably while maintaining the numerical aperture of the system. For example, the focusing optics may have a multi-lens system with a variable focal length.

[0051] The middle plane is preferably the plane that advantageously runs centrally within the substrate, i.e. between its two top surfaces, and whose normal vector runs parallel to the principal direction of extension of the laser beam.

[0052] In one embodiment, the position of the vertex is adjusted such that the vertex is located outside the substrate.

[0053] Alternatively or additionally, controlling the energy distribution within the substrate may also include adjusting the pulse energy, pulse duration, number of pulses in the burst, energy distribution in the burst, and / or laser wavelength, wherein the pulse energy is preferably adjusted such that the line focus within the substrate has at least one section along which the substrate material is modified due to the energy deposited in the substrate, in particular by an interaction between the energy and the substrate material, wherein the section preferably has a length of (a) more than 0.1 mm, preferably more than 0.3 mm, preferably more than 0.5 mm, preferably more than 0.7 mm, preferably more than 1 mm, preferably more than 3 mm, preferably more than 5 mm, (b) less than 5 mm, preferably less than 3 mm, preferably less than 1 mm, preferably less than 0.7 mm, preferably less than 0.5 mm.preferably less than 0.3 mm, preferably less than 0.1 mm, and / or (c) between 0.1 mm and 5 mm, preferably between 0.5 mm and 2 mm.

[0054] It was recognized that not only can the phase mask influence the energy distribution, particularly its position along the focus trajectory, but also that a change in pulse energy can lead to a change in the energy distribution, especially its position along the focus trajectory and / or its shape, such as its spatial extent. Therefore, the energy distribution can be controlled via the pulse energy.

[0055] Similarly, other parameters such as the pulse duration or the number of pulses in the burst, as well as the wavelength of the laser beam, can also be used for control, as the inventors have determined.

[0056] Preferably, the pulse energy is measured upstream of the focusing optics. Therefore, in this application, it is advantageous to take this into account for corresponding pulse energy values, unless the context indicates otherwise.

[0057] It was also recognized that, particularly for a set position of the vertex of the, especially curved, line focus along a depth range, preferably a thickness range, of the substrate, a pulse energy can be selected such that secondary maxima of the line focus are not present or are only slightly present, namely, for example, that the intensity of the main maximum in the transverse plane, which forms the desired line focus along the propagation, is at least 1.1 times, preferably at least 1.3 times, preferably at least 2 times, preferably at least 3 times, preferably at least 5 times, preferably at least 7 times, preferably at least 10 times, preferably at least 20 times, preferably at least 30 times, preferably at least 50 times, preferably at least 100 times,the maximum intensity of any secondary maximum in the same transverse plane or along the entire propagation is pronounced in the substrate.

[0058] Increasing the contrast between the main maximum, which defines the desired line focus, and all secondary maxima in the substrate is advantageous because it reduces or eliminates their influence on the material modification. This prevents shielding effects caused by secondary maxima, resulting in a particularly reliable formation of the line focus and thus a highly reliable material modification being introduced into the substrate.

[0059] In order to introduce a modification into the substrate by means of the line focus and the energy distribution it imparts, an energy density higher than a certain threshold value, which is particularly dependent on the material, is necessary at the relevant locations. Therefore, it is advantageous if the energy distribution is adapted by a suitably selected pulse energy so that sufficient energy is deposited in the substrate to achieve an interaction between the energy and the material that leads to the modification. It can be particularly advantageous for the method according to the invention if a high energy density is achieved in a spatially confined volume.This allows for particularly advantageous modifications to be introduced into the substrate, which are associated with a spatially limited but pronounced damage to the material and thus enable easy separation of the substrate along the desired separation surface without weakening the side surfaces of the separated substrate parts.

[0060] By adjusting the pulse energy, for example, the length of a section of the line focus can be changed within which a certain threshold of energy density is exceeded everywhere, in order to generate modifications (including the removal of material) in the material that extend at least along the section.

[0061] For example, the threshold value may depend on the material of the substrate.

[0062] By adjusting the pulse energy, for example, the position that the energy distribution, especially its center of gravity, occupies along the focus trajectory can also be changed.

[0063] Therefore, pulse energy is a complementary way to control the energy distribution, in particular to adjust it, for example with regard to the position of its center of gravity and / or with regard to the length of the section of the line focus along which a sufficiently high energy deposition in the substrate material takes place.

[0064] Alternatively or additionally, it may also be provided that (i) the pulse energy is set at least temporarily (a) to 50 µJ or more, preferably 100 µJ or more, preferably 200 µJ or more, preferably 300 µJ or more, preferably 400 µJ or more, preferably 500 µJ or more, preferably 600 µJ or more, preferably 1000 µJ or more, preferably 1500 µJ or more, preferably 2000 µJ or more, preferably 2500 µJ or more, preferably 3000 µJ or more, preferably 3500 µJ or more, preferably 4000 µJ or more, preferably 4500 µJ or more, preferably 5000 µJ or more, (b) to 5000 µJ or less, preferably 4500 µJ or less, preferably 4000 µJ or less, preferably 3500 µJ or less, preferably 3000 µJ or less, preferably 2500 µJ or less, preferably 2000 µJ or less, preferably 1500 µJ or less, preferably 1000 µJ or less, preferably 600 µJ or less, preferably 500 µJ or less, preferably 400 µJ or less,preferably 300 µJ or less, preferably 200 µJ or less, preferably 100 µJ or less, preferably 50 µJ or less, and / or (c) between 50 µJ and 5000 µJ, preferably between 10 µJ and 100 µJ, between 100 µJ and 300 µJ, between 150 µJ and 300 µJ, between 200 µJ and 400 µJ, between 300 µJ and 600 µJ, between 600 µJ and 1000 µJ, between 800 µJ and 2000 µJ, between 1500 µJ and 3000 µJ, between 2000 µJ and 4500 µJ µJ or between 3000 µJ and 5000 µJ. and / or (ii) the pulse energy is adjusted such that there is an average line energy density of (a) 1 µJ / mm or more, preferably 5 µJ / mm or more, preferably 10 µJ / mm or more, preferably 20 µJ / mm or more, preferably 30 µJ / mm or more, preferably 40 µJ / mm or more, preferably 50 µJ / mm or more, preferably 60 µJ / mm or more, preferably 70 µJ / mm or more, preferably 80 µJ / mm or more, preferably 90 µJ / mm or more, preferably 100 µJ / mm or more,preferably 150 µJ / mm or more, preferably 200 µJ / mm or more, preferably 250 µJ / mm or more, preferably 300 µJ / mm or more, preferably 350 µJ / mm or more, preferably 400 µJ / mm or more, preferably 500 µJ / mm or more, preferably 600 µJ / mm or more, preferably 700 µJ / mm or more, preferably 800 µJ / mm or more, preferably 900 µJ / mm or more, (b) 1000 µJ / mm or less, preferably 900 µJ / mm or less, preferably 800 µJ / mm or less, preferably 700 µJ / mm or less, preferably 600 µJ / mm or less, preferably 500 µJ / mm or less, preferably 400 µJ / mm or less, preferably 350 µJ / mm or less, preferably 300 µJ / mm or less, preferably 250 µJ / mm or less, 200 µJ / mm or less, preferably 180 µJ / mm or less, preferably 160 µJ / mm or less, preferably 140 µJ / mm or less, preferably 120 µJ / mm or less, preferably 100 µJ / mm or less, preferably 90 µJ / mm or less,preferably 80 µJ / mm or less, preferably 70 µJ / mm or less, preferably 60 µJ / mm or less, preferably 50 µJ / mm or less, preferably 40 µJ / mm or less, preferably 30 µJ / mm or less, preferably 25 µJ / mm or less, preferably 20 µJ / mm or less, preferably 15 µJ / mm or less, preferably 10 µJ / mm or less, preferably 5 µJ / mm or less, and / or (c) between 1 µJ and 200 µJ / mm, in particular between 10 µJ / mm and 120 µJ / mm, preferably between 10 µJ / mm and 50 µJ, between 40 µJ / mm and 80 µJ / mm, between 70 µJ / mm and 100 µJ / mm, or between 80 µJ / mm and 120 µJ / mm.

[0065] The proposed pulse energies and mean line energy densities are particularly preferred for a glass substrate.

[0066] When a burst pulse is used, the pulse energy and the burst energy can preferably be converted into each other according to the relationship BURST ENERGY = PULSE ENERGY x NUMBER OF PULSE IN THE BURST. For example, a pulse energy of 50 µJ and N=2 pulses in the burst result in a burst energy of 50 x 2 µJ = 100 µJ, and vice versa. Thus, the pulse energy can also be adjusted by setting a burst energy.

[0067] Preferably, the mean line energy density is defined as the quotient of laser pulse energy and substrate thickness. Alternatively, the mean line energy density can preferably also be defined as the quotient of laser pulse energy and the length of the modification in the substrate.

[0068] The inventors assume that preferably a local line energy density, i.e. an energy density integrated over the plane perpendicular to the laser propagation direction, of 1 µJ / mm or more is required to generate modifications, such as a change in the local refractive index of the material, in borosilicate glass using an Airy beam.

[0069] Alternatively or additionally, it may also be provided that controlling the energy distribution within the substrate includes (a) adjusting the spatial extent of the energy distribution, (b) adjusting, in particular shifting, the position of the maximum material damage, in particular caused by the nonlinear interaction between laser and substrate material, and / or (c) adjusting, in particular shifting, the position of the energy distribution, in particular a, preferably global, maximum of the energy distribution and / or the center of gravity of the energy distribution, preferably along the trajectory of the laser beam, in particular that of the line focus, wherein preferably (i) after adjusting the position of the energy distribution, at least a maximum of the energy distribution is positioned at the apex of the, in particular curved, line focus, (ii) after adjusting the spatial extent and / or the position of the energy distribution, a modification of the substrate material is carried out or is carried out along the entire substrate thickness, and / or (iii) the adjustment of the position of the energy distribution involves at least partially coordinating the influencing of the laser beam by means of the phase mask and the setting of the pulse energy.

[0070] By shifting the maximum of the energy distribution, the location of the (maximum) modification can be determined with exceptional reliability. This allows, for example, a planned separation process on the substrate to be reliably prepared and / or subsequently carried out.

[0071] By positioning the maximum energy distribution within the substrate material at the vertex, a modification symmetrical around the vertex can be introduced into the substrate. Optionally, by positioning the vertex itself symmetrically within the thickness region of the substrate, a separation surface and, consequently, a side surface of the separated substrate parts can be obtained that exhibits a symmetrical profile (especially within a cross-sectional plane spanned by the normal vector of a top surface of the substrate and a normal vector of the planned separation surface).

[0072] In certain embodiments, it is particularly preferred that the phase mask manipulation and the pulse energy adjustment are coordinated. This allows for very flexible control of the spatial extent and / or position of a modification within the substrate.

[0073] For example, the pulse energy can be selected such that along the line focus, across the entire thickness range of the substrate, there is a sufficiently high energy deposition in the material to induce modifications along the entire thickness range. This may be necessary, for instance, to achieve a modification in the substrate across the entire thickness range. Simultaneously, the position of the energy distribution is adjusted by a corresponding influence using the phase mask, such that its maximum is located at the apex of the focus trajectory. This allows for an overall symmetrical modification of the substrate material across the entire thickness range (for example, with respect to the plane, particularly the median plane, of the substrate in which the apex of the focus trajectory also lies).

[0074] In one embodiment, the location of maximum substrate modification is at the location of the vertex of the line focus trajectory and / or in the middle along the thickness range of the glass substrate.

[0075] Alternatively or additionally, it can also be provided that influencing the laser beam by means of at least one phase mask includes the laser beam striking the plane offset from the central point of the phase mask, wherein the central point is the location of the phase mask at which a laser beam striking the phase mask with a diameter approaching zero is influenced by the saddle point of the phase distribution imprinted on the phase mask, and wherein the offset preferably takes place within the mirror plane of the phase distribution, wherein the offset is preferably between 0.1 µm and 5000 µm, preferably between 1 µm and 3000 µm, preferably between 1 µm and 2000 µm.

[0076] A particularly simple and reliable way to influence the laser beam is to strike it at different positions on the phase mask. This is because the phase mask affects the laser beam, especially with regard to the energy distribution at the focus, depending on the position at which it strikes the phase mask. Preferably, the point of impact can be understood as the center of gravity of the beam cross-section in the plane of the phase mask.

[0077] In particular, it was found that, especially for a cubic phase mask, with an increasing offset of the point of impact of the laser beam (or rather: that of the center of mass of its cross-section in the plane of the phase mask) from the central point of the phase mask (especially if the offset occurs within the mirror plane of the phase distribution), the location of maximum energy on the focus trajectory within the substrate moves away from the vertex, depending on the sign of the offset in one direction or the other along the trajectory.

[0078] When this application refers to the central point of the phase mask, it preferably means the location of the phase mask where a laser beam striking the phase mask with a diameter approaching zero is influenced by the saddle point of the phase distribution imprinted on the phase mask.

[0079] The phase distribution, and thus the location of the saddle point of the phase distribution on the phase mask, can be determined, for example, using a microscope. Alternatively, the location of the saddle point can also be determined experimentally by striking a laser beam (or its center of mass in the beam cross-sectional plane on the phase mask) at different locations on the phase mask and identifying the location on the phase mask as the central point where the laser beam passing through the phase mask is influenced in such a way that, with suitable imaging in linear propagation (measurable by a microscope setup or ablation pattern on a substrate surface), the maximum intensity is reached at the vertex of the parabola, and / or the intensity distribution is symmetrically distributed around this point, and the secondary maxima before and after the focus are symmetrically pronounced.Or, put another way, that linear propagation corresponds to an ideal Airy beam.

[0080] Preferably, the saddle point, and therefore also the central point, is located at the geometric center of the phase mask. This can be achieved, for example, by using a centered phase function.

[0081] Preferably, the depth change of the maximum of the energy distribution for an offset dx results as a change in the effective focal length behind the focusing optics used by an amount df according to the given equation: df = 1 1 f 0 + 2 β 3 dx k 0 − f 0

[0082] These are: k0 is the wave vector with k0 = 2*pi*n / Lambda, where wavelength Lambda and refractive index n of the medium within which the focus is formed; f0 is the focal length of the focusing optics used; Beta is the scaling factor of the cubic phase phi, with φ = exp iβ 3 ∗ x 3 + y 3 , for example with β = 3 1 / 3< mm -1< , for x and y in mm.

[0083] The proposed method thus makes it possible to generate a focus shift by lateral beam offset and to use this focus shift to control the energy distribution.

[0084] It is therefore advantageous to observe the influence of the offset of a laser beam on a (especially cubic) phase mask on the position of the maximum of the focus intensity and thus effectively also on the energy distribution in the substrate along the focus trajectory.

[0085] Preferably, with increasing offset of the input beam on the phase mask from the center of the phase mask and / or within a plane of symmetry of the phase distribution, the location of the maximum of the energy distribution is shifted relative to (i) the vertex of the trajectory of the line focus and / or (ii) the point on the trajectory of the line focus whose tangent is parallel to the optical axis and which coincides with the vertex of the line focus produced by a centered input beam.

[0086] Therefore, preferably the line focus is a focus of an Airy beam and / or, by influencing the laser beam by means of at least one phase mask, the location of the maximum of the energy distribution is shifted relative to the vertex of the Airy trajectory, in particular produced by a centered input beam, preferably along the Airy trajectory.

[0087] Therefore, preferably the line focus is a focus of an Airy beam and / or by influencing the laser beam by means of at least one phase mask, the location of the maximum of the energy distribution is shifted relative to the vertex of the trajectory of the line focus, preferably along the trajectory of the line focus.

[0088] Alternatively or additionally, it may also be provided that (i) the offset is set (a) by moving the phase mask relative to the laser beam; (b) by at least one rotated plane-parallel plate, in particular made of a glass material and / or an optical material, preferably transparent at the laser wavelength; (c) by at least two prisms arranged one behind the other in the beam path, wherein the prisms preferably have the same prism angles and preferably the second prism is arranged rotated by 180° about the optical axis relative to the first prism; and / or (d) by translating, in particular within the beam path and / or parallel to the direction of the incident beam, a deflecting mirror that deflects the laser beam;and / or (ii) the offset is set by deflecting the laser beam, preferably parallel to and / or along the central axis of the phase mask, by means of at least one first means, such that the direction vector of the beam incident on the phase mask forms an angle with the direction vector of the central axis of the phase mask, wherein preferably the angle is 1 / 500 radian or less, preferably 1 / 1000 radian or less, preferably 1 / 2000 radian or less, and wherein the deflection is preferably set by means of the first means comprising (a) at least one rotatably mounted prism; (b) at least one rotatably mounted mirror; (c) at least one polygon or galvo scanner; (d) at least one acousto-optic modulator; (e) at least one liquid crystal on silicon spatial light modulator; and / or (f) at least one micro-electronic mirror component;and wherein preferably a second means identical to the first means is provided and arranged in the beam path before or after the phase mask and / or is controlled synchronously with the first means in order to deflect the laser beam such that it is perpendicular to the phase mask and / or the substrate and / or runs parallel but offset to the path before deflection with the first means.

[0089] Accordingly, two principles for setting the offset are particularly preferred. In one, the laser beam is incident parallel to the central axis of the phase mask (alternatively: parallel to the optical axis of the system used for focusing, including the phase mask and the focusing optics, such as a microscope objective or an aspherical lens). In the other, the laser beam is incident at an angle to the central axis of the phase mask.

[0090] In the latter case, the oblique beam path (relative to the central axis of the phase mask) can be reversed, so to speak, by correcting the angle with an identical means. Consequently, the beam is shifted by the first and second means, but travels along parallel directions before the first and after the second means.

[0091] If the lateral offset of the input beam on the phase mask, especially a cubic one, is produced by a rotated plane-parallel plate, the achievable maximum offset can be very easily adjusted by the thickness, refractive index and lateral extent of the plane-parallel plate relative to the diameter of the laser beam.

[0092] If the offset is achieved by two prisms with identical prism angles positioned one behind the other in the beam path, the achievable offset can be easily adjusted by the size of the prisms relative to the diameter of the laser beam, the deflection angle of the prisms, and their maximum distance from each other. For example, the sizes, angles, and distances can be chosen as follows: prism size, in particular diameter, between 10 mm and 60 mm (or even more than 60 mm), preferably between 10 mm and 26 mm; deflection angle according to the equation x = sin(th)*d, with the lateral beam offset x, the deflection angle th, and the distance between the prisms d; distance between 1 mm and 200 mm (or even more than 200 mm).

[0093] If the offset is achieved by translating a deflecting mirror in the beam path, a translation parallel to the direction of the incident beam is particularly advantageous. This is because the maximum offset is not limited by the size of the optics.

[0094] These options preferably produce a pure lateral offset without changes to the beam direction.

[0095] Particularly with sufficiently small deflections and a sufficiently large available distance (for example 100 cm or more, preferably 150 cm or more, preferably 200 cm or more, preferably 300 cm or more, preferably 400 cm or more) to the phase mask, the desired effect of an offset can also be achieved in a particularly reliable manner by changing the angle of the input beam.

[0096] Setting the deflection using a scanner or an acousto-optic modulator (AOM) is particularly advantageous. Due to the short response times of these components, they are inherently suitable for achieving significant deflection even with short pulse intervals, such as within a laser burst. This enables, for example, highly reliable on-the-fly modification of the substrate, especially with multiple, staggered laser pulses, each modifying the substrate in a separate depth section along a continuous trajectory within the substrate. This is particularly true without changing the speed, decelerating, or stopping the axes during a structuring process. This is especially relevant when the substrate is moved relative to a line focus at a speed of 2 m / s or less and / or with intraburst pulse intervals of 25 ns or less.Here, for example, the diameter of the modification itself (e.g., 1-10 µm) can be used as a comparison value.

[0097] As mentioned above, a purely lateral offset can be achieved with the proposed beam deflection methods by deflecting the beam at two consecutive positions in the beam path, with the second deflection compensating for the angle produced by the first. The synchronization of the deflection elements with each other is particularly important in this process.

[0098] According to the invention, the influencing of the laser beam by means of at least one phase mask is carried out in a time-dependent manner, thereby changing the energy distribution and thus its shape and / or position in a time-dependent manner.

[0099] By influencing the energy distribution over time, it can be shifted, for example, along the trajectory of the focus within the material. This advantageously allows, in one embodiment, the maximum of the energy distribution to be shifted over time, thus enabling reliable modification of the substrate even across a large thickness range.

[0100] This is advantageous, for example, if the line focus cannot provide a sufficiently high energy distribution in the substrate material along the entire thickness range to introduce a modification into the substrate material.

[0101] Thus, an energy distribution that reaches or exceeds a threshold necessary for the modifications along a section of the focus trajectory can be moved within the substrate.

[0102] For example, if the pulse energy is insufficient to achieve an energy density greater than a threshold required for modifications along the entire thickness range, this is a reliable and simple way to still create a symmetrical parting line even with correspondingly large thicknesses.

[0103] This is therefore advantageously a use case of dynamic influence.

[0104] Alternatively or additionally, it can also be provided that the laser beam is influenced by different areas of the phase mask at different, preferably immediately successive, time periods, in particular the laser beam, the center of gravity of the beam cross-section existing in the plane of the phase mask, has different points of impact on it during the different time periods.

[0105] For example, the offset can be controlled over time, i.e., the point of impact of the laser beam (or the center of gravity of the beam cross-section existing in the plane of the phase mask) on the phase mask. The methods mentioned above are suitable for this purpose, as they change the offset over time.

[0106] For example, the phase mask can be moved relative to the laser beam in a time-dependent manner, so that the offset within the horizontal plane of symmetry of the phase distribution is preferably different for different times.

[0107] Alternatively or additionally, it can also be provided that, by influencing the energy distribution over time, preferably at least a maximum of the energy distribution, within the substrate is moved, in particular from a greater to a lesser depth and / or along the focus trajectory within the substrate.

[0108] In addition to the general possibility described above of shifting the energy distribution and thus modifying even large thickness ranges, it is alternatively or additionally advantageous to generate the modification by moving the energy distribution, or its maximum or center of gravity, for example, from bottom to top, i.e., in particular from the side of the substrate facing away from the laser to the side facing the laser. This preferably moves the location of the current modification away from previous modifications. Thus, the line focus at the current location is not affected by modifications already introduced into the substrate. This allows for a very reliable introduction of the modification into the substrate.

[0109] In the substrate "below", the point furthest from the laser source, as traversed by the laser beam, can be the location in the substrate through which the laser beam travels. In the substrate "above", the point closest to the laser source, as traversed by the laser beam, can be the location in the substrate through which the laser beam travels.

[0110] The pulse of a radiation source can preferably be divided into two or more parts that strike the phase mask at different locations with a slight time offset. For this purpose, a single pulse is split in time, and, for example, the first part is directed to a first position of the phase mask, and the second part is directed to a second position of the phase mask. This deflection can preferably be achieved by one of the aforementioned means, in particular via separate beam paths (also as a fixed setup, then preferably using mirrors). Alternatively or additionally, the SSTF described below is also preferred in this context.

[0111] Therefore, this type of dynamic focusing can be highly advantageous, even if the pulse energy is sufficient for modification throughout the entire depth of the material. In these situations, the advantage of dynamic focusing lies in the fact that the extent of the material modification in the lower part of the substrate is not hindered by the plasma in the upper part of the substrate.

[0112] This form of dynamic focusing can also be particularly interesting when the available pulse energy is insufficient to modify the substrate along its entire thickness at once.

[0113] Especially with thicker substrates, but also more generally, the entire damage zone can be created within the substrate by means of several individual submodifications, each achieved by a laser pulse at a different position on the phase mask, particularly the cubic one. It is particularly advantageous to begin with the deepest submodification (the one furthest from the laser source in the beam direction) in the substrate material and to successively increase its position within the substrate.

[0114] The proposed method is therefore particularly preferred for substrates with a thickness of 500 µm or greater, preferably 1 mm or greater, preferably 3 mm or greater, preferably 5 mm or greater, preferably 7 mm or greater.

[0115] This allows for the use of smaller laser sources.

[0116] Alternatively or additionally, it may also be provided that influencing the laser beam by means of at least one phase mask has the effect that the intensity distribution of the laser beam, in particular within a pulse duration, is changed on the phase mask, in particular at the point where the beam hits the phase mask, in particular spatially shifted on it.

[0117] This effectively illuminates an elliptical area on the phase mask differently over time. Since this can be achieved without mechanical movement, but rather by modulating the laser beam intensity, it is highly reliable. Furthermore, undesirable effects that might hinder or prevent targeted adjustment of the energy distribution within the material can be avoided by controlling the temporal evolution of the energy distribution.

[0118] This simultaneous spatiotemporal pulse shaping (SSTF) is therefore highly preferred.

[0119] Alternatively or additionally, it can also be provided that, by means of the energy distribution introduced by means of at least a part of the line focus, (a) the substrate is modified at least in certain areas with respect to a material property, such as in particular its density, its refractive index, its stress values ​​and / or its etch rate, (b) microcracks are generated at least in certain areas in the substrate material and / or (c) material is removed and / or displaced from the substrate at least in certain areas, wherein preferably in several successive substrate areas the substrate material is modified, removed and / or displaced in this way along a straight or arbitrarily shaped contour, in particular the substrate material is compacted into the surrounding substrate material.

[0120] By changing one property of the substrate material, the planned separation surface is determined. The corresponding side surface of the substrate parts is also determined accordingly.

[0121] Removing substrate material from the substrate can be achieved, for example, by evaporating the material. Displacing substrate material can be achieved, for example, by compacting the substrate material into the surrounding substrate.

[0122] The controlled energy distribution can therefore generally be considered a means by which modification, including material removal or displacement, is achieved in the substrate material. This is because the energy distribution interacts with the substrate material in a manner not examined in detail here and not relevant to understanding the invention, resulting in the final modifications.

[0123] By performing the appropriate procedure in several areas of the substrate, multiple modified areas or areas with removed / displaced substrate material can be achieved. This effectively defines a corridor of damage, which simultaneously determines the planned separation surface. For example, mechanical or thermal action can trigger and / or complete the separation of the substrate into two parts along the planned separation surface. For instance, a crack can be created and propagated within the corridor. Alternatively or additionally, an IR laser can be used to initiate and / or complete the separation process. CO2 cleaving is also a preferred method for separating the substrate.

[0124] The different areas can be selected by a relative shift of the substrate and the line focus. If shifting the substrate by one centimeter takes significantly longer than the laser pulse duration (e.g., more than 100 times longer), the shift can preferably be continuous. Alternatively or additionally, a maximum permissible traverse speed v can also be determined using the relationship v = modification_size / pulse_interval, where modification_size is the maximum extent of the modification to be introduced into the substrate material and pulse_interval is the intraburst pulse interval (e.g., 40 MHz) or, in the case of single pulses, the interval between two successive pulses (e.g., 1 / 100 kHz).

[0125] Preferably the displacement is carried out continuously at a speed of 10 m / s or less, preferably 5 m / s or less, preferably 2 m / s or less.

[0126] A contour is understood to be the curve described by the points where the laser beam hits the surface of the substrate. The contour can be, for example, straight or circular, or have another shape, in particular an arbitrarily curved one.

[0127] In one embodiment, the diameter, in particular the maximum diameter, of the material modification or of the area with removed or displaced material, particularly in a cross-sectional plane perpendicular to the main extension direction of the modification, is between 1 µm and 100 µm, preferably between 1 µm and 50 µm, more preferably between 1 µm and 20 µm, and even more preferably between 1 µm and 10 µm.

[0128] Alternatively or additionally, it can also be provided that two or more line foci of two or more laser beams within the same area in the substrate, preferably at least partially in parallel and / or at least partially sequentially, are formed accordingly, and the energy distribution introduced into the substrate by them is controlled accordingly, wherein preferably (a) the energy distribution introduced by the individual line foci is different, in particular with regard to position and / or shape, wherein preferably the maxima of the individual energy distributions are located at different positions within the substrate, and / or (b) the trajectories of the two or more line foci are congruent.

[0129] When multiple laser beams are used, a single modification can be created very quickly, even in thick substrates. This is because no mechanical movement of components of the optical setup is required to influence a single laser beam, particularly to shift the energy distribution or its maximum within the substrate. Instead, for example, a first laser beam can exhibit a maximum energy distribution in the lower region of the modification, and a second laser beam can exhibit a maximum energy distribution in the upper region of the modification (where "upper" is preferably where the laser beam strikes the substrate).

[0130] In one embodiment, multiple beams are used to modify the substrate in parallel at two or more laterally spaced positions.

[0131] When beams, especially pulses, from different laser sources are used, the laser sources are preferably of the same type. This allows for particularly uniform modifications.

[0132] Alternatively or additionally, it can also be provided that the orientation of at least a section of the line focus within the substrate relative to the main propagation direction of the laser beam in the substrate is adjusted by controlling the energy distribution within the substrate and further by adjusting the focus position in the substrate material, wherein preferably the adjustment of the focus position is carried out by changing the distance between a focusing optic and the substrate and / or the thickness of the substrate is less than half the potentially possible length of the line focus along the thickness extension of the substrate for a given optical setup, wherein preferably the pulse energy and / or the beam diameter are selected such that the substrate is modified in its entire depth or is not modified in its entire depth.

[0133] Since the distance of the maximum of the energy distribution from the apex of the focus trajectory, in particular the Airy focus trajectory, is accompanied by a change in the local orientation of the line focus relative to the beam propagation direction or substrate surface, the angular orientation of the damage zone in the material can be adjusted by a combined beam offset, as described above for preferred embodiments, and a simultaneous adjustment of the focus position in the substrate material, for example by the aforementioned change in the distance between the focusing optics and the substrate or a change in the focal length of the focusing optics.

[0134] In this way, with thin lenses, a small section of the Airy trajectory can be used to create, at least approximately, a straight line focus with adjustable angles to the propagation direction.

[0135] Advantageously, by adjusting the focus position in the substrate material, in particular by changing the distance between a focusing optic and the substrate, a translation of the line focus in the substrate can be set and / or by adjusting the beam offset on either the phase mask and / or an optic, such as the focusing optic, a free orientation of at least one section of the line focus within the substrate relative to the main propagation direction of the laser beam in the substrate can be set, at least within certain angular ranges.

[0136] Advantageously, the orientation of the modification introduced into the substrate material also changes along with the orientation of at least one section of the line focus. This allows, preferably, the tilting of the modification in the substrate material to be achieved by adjusting the offset, and / or the offset along the laser propagation direction associated with the tilting to be compensated for by adjusting the focus position, and / or the vertical position of the tilted modification to be adjusted and / or set.

[0137] A "tilt" of the modification in the substrate material is preferably understood to be a modification which, under certain boundary conditions with regard to the optical setup and the laser parameters, has been introduced into the substrate material and which has a spatial orientation that is different from a spatial orientation of a, in particular conceptual, reference modification, wherein the reference modification can be introduced into the substrate material with a set offset of the laser beam on the phase mask and / or an optic, such as the focusing optic, under otherwise identical boundary conditions.

[0138] Advantageously, by shifting the energy distribution along the trajectory of the line focus, a tilting of the modification introduced into the substrate can be set and / or achieved. Alternatively or additionally, a tilting could also be achieved by tilting the substrate itself, particularly in the static case.

[0139] It is preferred if the adjustment of the focus position in the substrate material is performed in a time-dependent manner, in particular if the focus position in the substrate material is changed in a time-dependent manner. This can be achieved, for example, by a time-dependent change in the distance between the focusing optics and the substrate. This is therefore advantageously an application of dynamic control. Optionally, it may also be preferred to adjust the beam offset on the phase mask and / or an optic, such as the focusing optics, in parallel. That is, the focus position and offset are advantageously adjusted in relation to each other.

[0140] Advantageously, a tilting of the material modification is set and / or carried out by shifting the intensity maximum of the energy distribution along the trajectory of the line focus. This advantageously compensates for an asymmetrical manifestation of the material modification.

[0141] It is preferred that the substrate thickness along which the line focus is formed is at least less than half the extent of the focus trajectory available, particularly theoretically and / or practically, in the glass thickness direction.

[0142] For example, substrates with a thickness of 500 µm or less, preferably 300 µm or less, preferably 100 µm or less, and preferably 50 µm or less, are particularly preferred. Alternatively or additionally, the thickness can also be between 300 µm and 1000 µm.

[0143] The curved line focus can be generated, in particular with the aforementioned means, for example with lengths of more than 0.1 mm up to more than 3 mm, preferably between 0.1 mm and 5 mm, in particular between 0.5 mm and 3 mm, and / or a maximum deflection from the straight focal line of 500 µm, preferably between 10 µm and 200 µm, in particular between 20 µm and 80 µm.

[0144] The spatial shape (curvature) and thus the spatial shape of the affected substrate material depends on or can be determined by this maximum deflection, which can also be referred to as profile stroke.

[0145] The numerical aperture A = n * sin (ALPHA) of the focusing optics can be set and / or adjusted to determine the maximum deflection or profile stroke. Generally, the larger the numerical aperture of the focusing optics, the shorter the length of the resulting focus and – in the example case of an Airy beam – the greater the curvature of the Airy beam near the focus.

[0146] For the curved line focus, this means that as the thickness of the substrate decreases, the local curvature of the line focus must be increased in order to generate a significant profile lift at the parting line.

[0147] Alternatively or additionally, it may also be provided that (i) the line focus is a focus of an Airy beam, (ii) the line focus has a maximum deflection from a straight path that is more than 20 µm, more than 40 µm, more than 60 µm, more than 80 µm or more than 100 µm, (iii) the laser beam is emitted by a pulsed laser, (iv) the wavelength of the laser beam is selected from the wavelength range between 200 nm and 1500 nm, preferably the wavelength is 343 nm, 355 nm, 515 nm, 532 nm, between 750 nm and 850 nm, 1030 nm and / or 1064 nm, the microscope objective orThe Fourier lens of a focusing optic, with which the laser beam is preferably focused onto the substrate, has a focal length of 10-20 mm, the coefficient of the cubic phase (laser parameter Beta) has a value between 0.5x10 32 / m and 5x10 32 / m, the diameter of the raw beam (laser parameter ω 0 ) has a value between 1 mm and 10 mm, preferably between 2.5 mm and 7.5 mm, preferably between 2.5 and 5 mm, the pulse duration (laser parameter c) has a value of 0.1-10 ps, ​​the pulse energy (laser parameter E p ) has a value between 1 and 1.500 µJ, preferably between 30 and 500 µJ, in particular 474 µJ, and / or the number of pulses in the burst (laser parameter N) has a value between 1 and 200, preferably between 1 and 100, in particular between 1 and 8, and / or (v) the pulse energy of the laser is sufficient only to modify the substrate in at least one material property or to remove or displace material from the substrate along a certain section of the line focus, wherein the section is shorter than the extent of the substrate area that is to be modified in its material property or that is to be removed or displaced.

[0148] An Airy beam can be reliably generated and has a curved line focus.

[0149] A laser beam, whose line focus is employed here, can be guided and controlled along an optical path using known means. The line focus can be set and adjusted using various means, such as optical elements. This allows an electromagnetic field to be generated within the substrate body, which can assume any spatial shape achievable by means of beam shaping and beam control. Preferably, an Airy beam is generated.

[0150] A laser beam with a line focus thus represents an extremely flexible means of modifying the substrate in a curved area.

[0151] When processing substrates with a laser, a general distinction is made between linear and nonlinear absorption processes. Linear absorption occurs when the material being processed is partially or completely absorbing for the wavelength of the laser used (e.g., absorption of CO2 laser radiation in glass), allowing the strength of the interaction to be adjusted via laser wavelength, energy, pulse duration, and other parameters. This differs from nonlinear absorption processes, where the material being processed initially exhibits no absorption in the range of the laser radiation used, meaning it is transparent to the laser wavelength(s).By generating so-called ultrashort laser pulses (typical pulse lengths range from 10 ps to 100 fs, particularly from 1 ps to 100 fs), sufficiently high intensities can be produced in the substrate material by the laser to induce nonlinear optical effects. These effects can include, for example, a change in the effective refractive index or the generation of a plasma within the substrate material. If enough energy is deposited in a suitable distribution within the material, the laser beam causes a permanent change. The resulting local changes in the material range from permanent alterations in the refractive index and changes in etching behavior (selective laser etching) to the creation of cracks and channels in the substrate, each depending on the interplay of laser and material parameters and limited to at least a region of the laser focus formed within the material.

[0152] The inventors currently assume that the energy deposited in the substrate can be seen both as a result of the nonlinear interaction of the electromagnetic field of the laser pulse with the substrate material and as the cause of the modification in the substrate. Without considering the specific damage mechanisms in the material, the deposited energy, which can be simulated with suitable models for nonlinear laser pulse propagation, can therefore be used as a proxy for the extent of the material modification.

[0153] For example, the critical intensity for a glass substrate to induce a nonlinear change in material properties, and in particular a plasma suitable for material processing, is at least 1013 W / cm². In one embodiment, the substrate material is glass, and the electromagnetic field of the laser has a field strength of at least 1013 W / cm², preferably at least 5 x 1013 W / cm², more preferably at least 1014 W / cm², and most preferably at least 5 x 1014 W / cm². Optionally, the electromagnetic field has a field strength of at most 1016 W / cm².

[0154] A possible setup for generating a curved line focus according to the invention can, in principle, be designed as follows: The laser beam of an ultrashort pulse laser strikes a diffractive optical element (DOE), which adjusts the phase of the incident laser beam (laser pulse) by imprinting a phase, such as a cubic phase. The beam is then focused onto the substrate to be structured by a microscope objective and / or a Fourier lens. Depending on the resulting phase distribution behind the DOE, the imaging objective now produces not a straight, but a curved focal line. In one embodiment, the secondary maxima of the Airy beam can also be suppressed. The intensity ratio of the main focus to the rest of the beam can be optimized (1.2 - 10). This can be achieved, for example, by non-radially symmetric apodization in the Fourier plane using an aperture.

[0155] For example, a DOE used as a phase mask has a diameter of 5-15 mm, preferably 9 mm, and lies in the front focal plane of the microscope objective or Fourier lens. Preferably, the DOE (or, more generally, the phase mask) has a working distance from the lens in question that is equal to the focal length of the lens and / or between 2-15 mm, preferably 5 mm. If, in the case of a microscope objective, the front focal plane lies within the objective itself, the minimum (structurally determined) distance should preferably be selected.

[0156] For example, an Airy jet can be used in this case. An Airy jet is particularly well suited for asymmetrical / lateral beam delivery.

[0157] Furthermore, an Airy beam can be generated particularly easily and efficiently. For example, an Airy beam can be created by imaging a cubic-phase beam, which is generated either directly by a phase mask (DOE or SLM) or by a setup with cylindrical lenses.

[0158] The pulse energy (laser parameter Ep) can be set to, for example, 300 µJ, the number of pulses in the burst (laser parameter N) to, for example, 2, and / or the pulse duration (laser parameter c) to, for example, 5 ps. Optionally, the focal length of the optics can be f = 10 mm and / or a 2.0 x beam expander (especially with an input Gaussian beam with a diameter of 10 mm) can be provided.

[0159] By appropriately selecting the optical setup (in particular determining the vertical distance between the focusing optics and the substrate material to be processed, i.e., the focus position and length), curved modifications can be produced in this way, either inside or through one or both of the large surfaces (base and / or top surface) in the substrate material.

[0160] If the pulse energy exceeds a threshold value dependent on the substrate material, a nonlinear interaction between the laser and the material can occur, leading to the modifications discussed. Therefore, in one embodiment, it is preferred that the pulse energy exceeds a threshold value dependent on the substrate material, allowing for a nonlinear interaction between the laser and the material.

[0161] Alternatively or additionally, it may also be provided that the modified areas within the substrate are opened by generating a mechanical and / or thermal stress and / or by an etching process, in particular to create a through hole and / or a blind hole within the substrate material, and / or that along a closed contour and / or along a modification extending from substrate side to substrate side are opened by mechanical, thermal and / or chemical processes, in particular to create an inner or outer contour with a shaped side surface.

[0162] Alternatively or additionally, it can also be provided that at least during the control of the energy distribution at least one auxiliary substrate is arranged on the substrate and the line focus extends at least partially into the auxiliary substrate, wherein preferably two or more auxiliary substrates are arranged on the substrate, in particular on opposite sides of the substrate, and the line focus extends at least partially into two or more auxiliary substrates.

[0163] Preferably, the auxiliary substrate is made of the same material as the substrate.

[0164] With such an auxiliary substrate, ablation effects on the free substrate surfaces can be avoided or at least significantly reduced when the line focus penetrates.

[0165] For example, in one embodiment the substrate to be structured can be processed together with a blasted, bonded and / or ultrashort pulse welded auxiliary substrate, so that during processing only internal influences are initially generated and these are, so to speak, exposed in a further process step (for example, describable as debonding) by removing the auxiliary substrate.

[0166] By using an auxiliary substrate, the energy distribution and / or the substrate itself can be precisely controlled and manipulated, even near the surface. This is because the auxiliary substrate allows the line focus to extend beyond the substrate without significantly affecting its path. This ensures that the line focus remains true to its intended shape, even near the surface, and that the energy distribution can be adjusted and / or the substrate material spatially manipulated as specified.

[0167] In particular, if the auxiliary substrate and the substrate are made of the same material, it is ensured that there is a seamless and, above all, offset-free transition of the line focus at the interface between the two.

[0168] The auxiliary substrate(s) can then be removed from the substrate. This exposes the actual substrate and any affected substrate material.

[0169] In other words, when the auxiliary substrate is removed, a clean influencing of the substrate can be achieved right down to the outer surface of the substrate.

[0170] One or more auxiliary substrates can be provided.

[0171] The auxiliary substrate(s) can surround the substrate, enclosing it from one or more sides, so to speak.

[0172] The auxiliary substrate reliably prevents the accumulation of substrate material at the edge of a surface due to ablation effects.

[0173] Alternatively or additionally, it can also be provided that the line focus, and preferably the modified material area of ​​the substrate, is completely enclosed within the substrate, particularly at least during the control of the energy distribution, and wherein the method preferably further comprises that at least area material is removed from the substrate, particularly along the main extension direction of the line focus within the substrate, thereby making the modified material enclosed in the substrate at least partially and / or area accessible from the outside, in particular by removing material from the substrate by means of etching.

[0174] By placing the line focus entirely within the substrate, ablation effects on the substrate's surfaces – both original and preserved – can be reliably avoided.

[0175] With the proposed features, energy deposition and substrate material manipulation occur only in an area located within the substrate itself, and therefore inaccessible from the outside. This ensures that the line focus is not affected, or at least not significantly affected. Consequently, the line focus does not deviate from the desired shape, and / or that the substrate material is spatially manipulated as specified.

[0176] Subsequently, substrate material can be removed from the substrate until approximately the affected substrate material is reached (or even beyond). For example, a suitable etching process has proven advantageous for this purpose, as it can be carried out precisely and efficiently. In this way, a new surface, such as a new, at least temporary, covering surface of the substrate, can be formed. Removing the substrate material exposes the affected area from the outside. This makes it possible, for example, to subsequently remove the affected substrate material.

[0177] In this way, very reliably defined, affected material areas within the substrate can be reached, extending all the way to the surface of the final processed substrate. This, in turn, makes a clean surface achievable.

[0178] For example, removing material from the substrate alters at least one, preferably both, surface of the substrate. In other words, a displacement of the surface can occur, for instance along the main direction of extension of the line focus.

[0179] The main direction of extension of the line focus can, for example, run perpendicular to an original and / or modified surface of the substrate.

[0180] Alternatively or additionally, it may also be provided that controlling the energy distribution within the substrate further includes (i) the laser beam having a spherical aberration, in particular at least in the area of ​​the line focus, and / or (ii) a spherical aberration of the laser beam being set, in particular at least in the area of ​​the line focus.

[0181] It was surprisingly discovered that a more uniform and extensive energy distribution within the substrate can be introduced by using a spherical aberration in the laser beam, compared to the original Airy beam. This allows for a more precise definition of the modified area within the substrate. Consequently, unwanted damage to the substrate material can be reduced or even completely avoided, and / or the laser pulse energy can be reduced to achieve a specific target energy distribution and modification.

[0182] Furthermore, it is advantageous to adjust the position of the maximum intensity of the energy distribution along the, preferably stationary, line focus trajectory by setting the spherical aberration and / or to adjust, in particular shift, the position of the maximum intensity of the energy distribution along the, preferably stationary, line focus trajectory by changing the spherical aberration.

[0183] This makes it particularly advantageous to achieve at least a partial and / or section-by-section homogenization of the intensity, especially along the trajectory of the line focus. This is achieved, in particular, without altering the trajectory of the line focus, especially its main maximum.

[0184] The spherical aberration preferably has the unit 12.5 / f 3< , with the focal length of the imaging system f.

[0185] When this application refers to the laser beam having a spherical aberration, it is preferably understood that the light rays of the laser beam do not converge at a specific point and / or that one or more rotationally symmetric phases of even power > 2 are present, for example an additional fourth-order phase term, which leads to a change in the effective focal length along the radius of the optics.

[0186] Advantageously, the spherical aberration of the beam could be introduced using optics which have a lens with spherical aberration whose phase satisfies the following equation: ϕ lens ρ = k 0 ∗ ρ 2 2 f + aρ 4

[0187] Alternatively or additionally, it can also be provided that the laser beam, preferably outside the substrate and / or in front of the substrate, is propagated through an optical element with spherical aberration, and thereby preferably the spherical aberration of the laser beam, in particular at least in the area of ​​the line focus, is at least partially corrected.

[0188] This is a particularly simple yet efficient way to adjust and control the spherical aberration of the laser beam.

[0189] Alternatively or additionally, it can also be provided that the fourth-order spherical aberration has a strength of 0.02 / (f*w0^2) or more, where f is the focal length of the imaging system and w0 is the diameter of the laser beam.

[0190] This is particularly advantageous for typical energy distributions for introducing modifications into glass substrates.

[0191] Alternatively or additionally, it can also be provided that the spherical aberration results in an extension of the focus formed within the substrate by 5% or more, preferably by 10% or more, preferably by 15% or more, preferably by 20% or more, preferably by 25% or more, preferably by 30% or more, preferably by 35% or more, preferably by 40% or more, preferably by 50% or more, preferably by 60% or more, and / or by 100% or less, preferably by 70% or less, preferably by 50% or less, preferably by 30% or less, wherein the focus length preferably consists along a section of the laser beam trajectory where the line focus has an intensity that is 75% or more, 80% or more, 85% or more, or 90% or more of the maximum intensity of the line focus.

[0192] For example, the length of the focus formed within the substrate (namely the line focus) can be compared with and without set and / or controlled spherical aberration.

[0193] Alternatively or additionally, it can also be provided that the spherical aberration results in an elongation of the modified substrate material by 5% or more, preferably by 10% or more, preferably by 15% or more, preferably by 20% or more, preferably by 25% or more, preferably by 30% or more, preferably by 35% or more, preferably by 40% or more, preferably by 50% or more, preferably by 60% or more, and / or by 100% or less, preferably by 70% or less, preferably by 50% or less, preferably by 30% or less, wherein preferably along the length there is a modification intensity at which the modification has an intensity that is 75% or more, 80% or more, 85% or more or 90% or more of the maximum intensity of the modification.

[0194] This allows the difference to be observed directly on the processed substrate.

[0195] Alternatively or additionally, it may also be provided that the spherical aberration of the laser beam, especially in the area of ​​the line focus, is varied over time, in particular by varying the point of impact of the laser beam on the phase mask and / or an optical element, such as a microscope objective, of the optical setup.

[0196] This makes it particularly easy to achieve temporal depth variation of the material modification. For example, the material modification can be developed "from bottom to top" by changing the spherical aberration, thereby lengthening the line focus and with it the energy distribution over time and / or shifting its intensity maximum.

[0197] Alternatively or additionally, it can also be provided that the center point of the laser beam striking the optical element strikes the optical element at least temporarily with an offset to the optical axis of the optical element, preferably with the offset being varied over time.

[0198] This can be achieved particularly easily, for example by moving the laser beam and / or the optical element relative to each other.

[0199] Alternatively or additionally, it may also be provided that a constant and / or maximum offset of 20 mm or less, preferably 15 mm or less, preferably 10 mm or less, preferably 5 mm or less, preferably 3 mm or less, preferably 2.5 mm or less, preferably 2 mm or less, preferably 1.5 mm or less, preferably 1 mm or less, 0.001 mm or more, preferably 0.003 mm or more, preferably 0.01 mm or more, preferably 0.1 mm or more, preferably 1 mm or more, preferably 5 mm or more, preferably 10 mm or more, preferably 15 mm or more, and / or between 0.001 mm and 20 mm, preferably between 0.001 mm and 10 mm, preferably between 0.003 mm and 10 mm, preferably between 0.003 mm and 5 mm, preferably between is set between 0.003 mm and 2 mm, preferably between 0.003 mm and 1.5 mm.

[0200] Alternatively or additionally, the optical element can also be a lens, the lens preferably having a spherical curvature at least in some areas.

[0201] This is a particularly simple and inexpensive way to equip the laser beam with a controlled spherical aberration.

[0202] Alternatively or additionally, it can also be stipulated that the spherical aberration is a spherical aberration of the fourth or higher order.

[0203] Particularly good results were achieved with this.

[0204] Alternatively or additionally, it can also be provided that the spherical aberration is a spherical aberration according to Zernicke polynomials with indices m=0 and n = 2k for integer k>2.

[0205] Particularly good results were achieved with this.

[0206] Alternatively or additionally, it can also be provided that the spherical aberration and the influence of the laser beam by means of the phase mask are coordinated, in particular by coordinating the, preferably time-varying, point of impact of the laser beam on the optical element and the, preferably time-varying, point of impact of the laser beam on the phase mask.

[0207] The interplay of two independent mechanisms allows for particularly good control of the energy distribution introduced into the substrate.

[0208] Alternatively or additionally, it may also be provided that by adjusting the spherical aberration, the energy distribution, the intensity and / or the intensity distribution of the rear end section of the line focus along the main extension direction of the line focus can be adjusted, in particular changed, such as magnified.

[0209] Here, the effect that spherical aberration leads to an asymmetric influence on the line focus and energy distribution (particularly pronounced on only one side of the original focus) is advantageously utilized. This effect can thus be used to compensate for a preferential energy deposition due to nonlinear effects in front of the linear focus by placing the enhanced area behind the linear focus.

[0210] Alternatively or additionally, it may also be provided that by adjusting the spherical aberration, the positioning of the energy distribution along the line focus, in particular along the, preferably stationary, trajectory of the line focus, can be changed and / or adjusted.

[0211] Alternatively or additionally, it can also be provided that controlling the energy distribution within the substrate further comprises changing the wavelength of the laser beam in a time-dependent manner, in particular continuously or discretely, and wherein preferably within the beam path of the laser beam, preferably in front of the substrate, an optical element is provided which refracts the laser beam in a wavelength-dependent manner.

[0212] The optical element can, for example, be a prism, preferably placed in the path of the laser beam.

[0213] Alternatively or additionally, it can also be provided that the laser beam has at least section by section, in particular in the plane of the phase mask, an at least temporarily elongated, in particular rectangular or oval, for example elliptical, beam cross-section, wherein preferably the beam cross-section is changed over time, in particular between circular and oval.

[0214] A rectangular beam cross-section allows for a particularly constant intensity distribution along the propagation path.

[0215] It was surprisingly discovered that a laser beam with a cross-section deviating from a circular area (especially on the phase mask) can exhibit a line focus that may have reduced secondary maxima. This allows unwanted modifications in the substrate caused by secondary maxima to be avoided or at least reduced.

[0216] Preferably, the laser beam is an elliptical beam. An elliptical beam is preferably characterized by the fact that the beam diameters differ from each other along two mutually orthogonal principal axes. An elliptical beam can be generated by adjusting the beam diameter of a rotationally symmetric beam in one spatial direction using appropriate optics, e.g., a telescope made of cylindrical lenses, in particular by widening or narrowing it.

[0217] The proposed laser cross-sectional design increases the contrast of the line focus, as the intensity of the main maximum can be increased relative to the intensity of the secondary maxima. Furthermore, an orientation of the secondary maxima was observed, with the secondary maxima running largely parallel to the planned interface. As a result, the secondary maxima do not, or only minimally, influence the introduction of the modification into the substrate.

[0218] Furthermore, the proposed design of the laser cross-section allows for the creation of secondary maxima of the line focus, which essentially smear out, causing neighboring secondary maxima to merge into one another. This results in a particularly high-quality cut surface.

[0219] In conjunction with the proposed laser cross-section design, a crack orientation within the substrate can advantageously be achieved during or for forming the parting line or during or for dividing the substrate, which essentially runs along the modifications in the substrate generated by the principal maxima of the line focus. Alternatively or additionally, the crack orientation is collinear with the desired cut. This allows for a particularly high quality of the cut surface in each case.

[0220] Preferably, the material modifications caused by the secondary maxima of the line focus, particularly in a cross-sectional plane perpendicular or parallel to a surface of the substrate, run essentially parallel to the planned cut surface and / or in a linear fashion. This can be achieved, for example, by a suitable orientation of the substrate and the laser beam (especially with an elongated beam cross-section) relative to each other.

[0221] Preferably, the material modifications caused by the secondary maxima of the line focus are arranged in an onion-skin-like manner within the substrate material.

[0222] Alternatively or additionally, it can also be provided that several material modifications are introduced into the substrate, wherein the distance between adjacent material modifications, in particular the distance between the centers of gravity of the material modifications and / or in a cross-sectional plane parallel to a top surface of the substrate, is 1 µm or more, preferably 3 µm or more, preferably 5 µm or more, preferably 7 µm or more, preferably 10 µm or more, preferably 15 µm or more, preferably 20 µm or more.

[0223] Particularly when used with a laser beam having a cross-section deviating from a circle, a surprisingly reliable separation surface can be achieved despite comparatively large distances (so-called "pitches") between adjacent modifications of, for example, 1 µm or more, and preferably even 10 µm or more, 20 µm or more, 30 µm or more, 40 µm, or 50 µm or more. At such relatively large distances, the influence of an adjacent modification, especially one introduced with a time delay or simultaneously, on the line focus can be avoided or at least reduced.

[0224] Therefore, the proposed distance can prevent or at least reduce interactions between adjacent areas in the substrate with modifications.

[0225] In particular, the extensions of the laterally angled / arrow-shaped modifications (especially those caused by the secondary maxima of the line focus) generally overlap only to a reduced extent or not at all due to a corresponding spacing. By selecting an elongated beam cross-section, these extensions can be reduced even further, so that, together with the greater spacing of adjacent pitches, reliable material modification can occur at multiple locations. This ensures that the propagation of the laser beam in the material is not, or only minimally, disturbed by preceding and / or adjacent modifications.

[0226] The invention enables a substrate to have at least a first top surface, at least one second top surface, preferably extending parallel to the first top surface, and at least one, in particular laser-fractured, side surface, which preferably extends at least partially between the first and the second top surface, wherein in a cross-sectional plane of the substrate, spanned by a plane having at least one normal vector of the side surface and one normal vector of the first top surface, the contour of the side surface has a vertex located between the two top surfaces, and wherein preferably (i) the vertex is located (a) centrally between the two top surfaces, and / or (b) is located at a distance, in particular a vertical distance, from the central position between the two top surfaces, in particular the, in particular vertical,The distance along a direction parallel to the normal vector of the first cover surface (aa) is more than 0.1%, preferably more than 1%, preferably more than 5%, preferably more than 10%, preferably more than 20%, preferably more than 30%, preferably more than 40%, preferably more than 45% of the thickness of the substrate, (bb) is less than 50%, preferably less than 45%, preferably less than 35%, preferably less than 25%, preferably less than 15%, preferably less than 10%, preferably less than 5%, preferably less than 3%, preferably less than 1% of the thickness of the substrate, and / or (cc) is between 0.1% and 49%, preferably between 0.1% and 10%, or between 1% and 40%, preferably between 5% and 30%, preferably between 10% and 25% of the thickness of the substrate, (ii) the side surface is height-modulated at least in certain areas, in particular having a wave-like and / or dome-shaped structure.preferably along the main extension direction of the side surface and / or perpendicular thereto, and / or (iii) the substrate has a curved modification with a course according to at least one segment of an Airy-beam trajectory, is proposed.

[0227] Height modulation has proven advantageous, as it contributes to increased surface strength.

[0228] The contour of the side surface is preferably understood to be the, in particular linear, course of the side surface in the cross-sectional plane.

[0229] The invention further enables a substrate to have at least one first top surface, at least one second top surface, preferably extending parallel to the first top surface, and at least one laser-fractured side surface, which preferably extends at least partially between the first and the second top surface, wherein in a cross-sectional plane of the substrate, spanned by a plane having at least one normal vector of the side surface and one normal vector of the first top surface, the contour of the side surface has a vertex located between the two top surfaces, and wherein the vertex is located centrally between the two top surfaces and / or is located at a distance, in particular a vertical distance, from the central position between the two top surfaces, wherein the vertical distance along a direction parallel to the normal vector of the first top surface (i) is more than 0.1%, preferably more than 1%.(ii) less than 5%, preferably less than 10%, preferably more than 20%, preferably more than 30%, preferably more than 40%, preferably more than 45% of the substrate thickness, (ii) less than 50%, preferably less than 45%, preferably less than 35%, preferably less than 25%, preferably less than 15%, preferably less than 10%, preferably less than 5%, preferably less than 3%, preferably less than 1% of the substrate thickness, and / or (iii) between 0.1% and 49%, preferably between 0.1% and 10%, or between 1% and 40%, preferably between 5% and 30%, preferably between 10% and 25% of the substrate thickness, wherein the substrate thickness is more than 500 µm, preferably more than 700 µm, preferably more than 1000 µm, preferably more than 1500 µm, preferably more than 2000 µm. In particular, the thickness of the substrate can be less than 10 cm, preferably less than 7 cm.preferably less than 5 cm, preferably less than 3 cm, is proposed.

[0230] Alternatively or additionally, it may also be provided that (i) the substrate is transparent, made of glass and / or glass-ceramic, has a first covering surface and / or a second covering surface, which preferably runs parallel to and / or is opposite the first covering surface, and / or (ii) the substrate has a thickness, preferably measured between the first and second covering surfaces, of (a) 10 µm or more, preferably 30 µm or more, preferably 50 µm or more, preferably 70 µm or more, preferably 100 µm or more, preferably 300 µm or more, preferably 500 µm or more, preferably 700 µm or more, preferably 1 mm or more, preferably 3 mm or more, preferably 5 mm or more, preferably 7 mm or more, preferably 10 mm or more, (b) 10 mm or less, preferably 7 mm or less, preferably 5 mm or less, preferably 3 mm or less, preferably 1 mm or less, preferably 700 µm or less,preferably 500 µm or less, preferably 300 µm or less, preferably 200 µm or less, preferably 100 µm or less, preferably 70 µm or less, preferably 50 µm or less, preferably 30 µm or less, preferably 10 µm or less, and / or (c) between 10 µm and 10 mm, preferably between 10 µm and 500 µm, preferably between 50 µm and 200 µm. Brief description of the characters

[0231] Further features and advantages of the invention will become apparent from the following description, in which preferred embodiments of the invention are explained with reference to schematic drawings.

[0232] This shows: Fig. 1 an optical setup for carrying out the method; Fig. 2 a cubic phase mask; Fig. 3 a substrate with a modified substrate region; Fig. 4 the simulated distribution of the line energy density along a line focus in a substrate for different pulse energies; Fig. 5 the distribution of the depth position of the experimentally determined maximum of the material modification for different pulse energies; Fig. 6 the influence of the offset of a laser beam on the cubic phase mask on the position of the maximum of the focus intensity or of the energy distribution along the focus trajectory; Fig. 7 the relationship between the offset of a laser beam on the cubic phase mask and the position of the maximum of the line energy density along the focus trajectory; Fig. 8 the influence of the focal length of the focusing optics for a laser beam; Fig. 9a-c different possibilities for producing a beam offset; Fig.9 your realization form of the deflection optics in . Fig. 9c Fig. 10a a cross-sectional view of a substrate with an enclosed curved modification area; Fig. 10b a cross-sectional view of a substrate with an externally accessible modification area; Fig. 10c a cross-sectional view of a machined substrate; Fig. 11 a top view of a machined substrate body; Fig. 12 substrate body made of Fig. 11with introduced modifications; Fig. 13a an optical setup for controlling, in particular, the spherical aberration; Fig. 13b intensity profiles of a laser beam along a depth direction of a substrate for differently set spherical aberrations; Fig. 13c substrates with modifications introduced at differently set spherical aberrations and beam offsets; Fig. 14a a cubic phase mask with a first beam cross-section of a laser beam and a glass substrate with a modification caused by the laser beam; and Fig. 14b a cubic phase mask with a second beam cross-section of a laser beam and a glass substrate with a modification caused by the laser beam. Examples

[0233] Figure 1 shows an optical setup 1 for carrying out the method according to the invention.

[0234] The optical setup 1 comprises a pulsed laser (not shown) that emits a laser beam 3 with a wavelength of 1030 nm. The laser beam 3 has a diameter of 2ω₀. The optical setup also includes a cubic phase mask 5 and a focusing optic 7 spaced at a distance D from it, with a focus length f of, for example, 10 mm. The phase mask 5 and the focusing optic 7 generate an Airy beam from the laser beam 3, which has a curved line focus. To achieve this, the laser beam 3 passes through the phase mask 5 and then the focusing optic 7.

[0235] At a distance d from the focusing optics 7, a substrate 9, to be separated along a planned cutting surface, is arranged such that the curved line focus of the laser beam 3 is formed within the substrate. The distance d is defined with respect to the top surface of the substrate 9 facing the laser source. The distance Δz 1 of the vertex of the line focus from the top surface of the substrate 9 facing the laser source, and thus also the relative vertical position of the line focus within the substrate 9, is set by selecting the focal length f and / or by selecting the distance d of the substrate 9 from the focusing optics 7. If the focal length f is increased or the distance d is decreased, this causes a shift of the vertex of the line focus, and thus of the entire curved line focus, away from the top surface of the substrate 9 facing the laser source. Fig. 1that is, downwards. Conversely, a reduction in the focal length f or an increase in the distance d causes a shift of the vertex of the line focus towards the top surface of the substrate 9 facing the laser source. Fig. 1That is, upwards. In other words, the curved line focus can be moved along a depth range through the substrate 9 by varying the distance d between the focusing optics 7 and the surface of the substrate 9 facing the laser source and / or by varying the focal length f of the focusing optics 7. Thus, the vertex of the line focus can be reliably positioned, for example, in the center of the substrate 9, but also offset to any position across the thickness of the substrate 9, i.e., towards the first surface. Of course, it is possible to adjust the focal length f and the distance d simultaneously to modify the position of the vertex, for example, by decreasing the focal length f and increasing the distance d.

[0236] If the line focus has an axis of symmetry, symmetrical and asymmetrical material modifications can be generated across the thickness of the substrate 9, depending on the position of the vertex in the substrate 9, which is determined in particular by adjusting the focal length f and / or the distance d. In particular, modifications can be created that are symmetrical, for example, located centrally in the substrate, so that the material modification is, for example, C-shaped. If, on the other hand, the line focus does not have an axis of symmetry, asymmetrical material modifications can be generated along the thickness of the substrate 9.

[0237] In this process, both symmetrical and non-symmetrical line foci lead to an advantageous material modification, preferably across the thickness of the substrate 9 in its volume, and in particular in a region within which the line focus is formed.

[0238] In addition to the off-center and thus asymmetric positions of the curved line focus, in particular its vertex, with respect to the top surfaces, thus produced in this way, a positioning of the curved line focus in the substrate 9 that is centered with respect to the substrate thickness and thus symmetrical can also be achieved preferably by suitable choice of the focal length f.

[0239] Fig. 2 shows a cubic phase mask, as it can be used for phase mask 5.

[0240] Fig. 3 Figure 1 shows a section through a portion of a substrate 11 with a substrate area 13, within which the substrate material was modified in its refractive index by a curved line focus of an Airy beam.

[0241] Specifically, a pulse with a pulse energy of 342 µJ was used, and, as is the case with regard to Fig. 1As described, an Airy line focus formed in substrate 11, namely borofloat 33. The laser beam had a principal propagation direction R.

[0242] Along a section of the line focus, within which a sufficiently high energy density was introduced into the substrate to modify the material, the substrate was modified. The circular areas at the two outer positions of modification 13 mark the experimental detection limit of modification 13. The two outer positions are spaced Δz 2 apart along the depth region of substrate 11, i.e., along the thickness of substrate 11.

[0243] Furthermore, in Fig. 3The location where the maximum energy distribution introduced by the line focus occurred, and thus where maximum modification of the substrate material took place, is marked by a square. The vertex of the curved region is marked by a triangle. It turns out that the vertex and the location of maximum modification do not coincide.

[0244] Fig. 4 This shows the simulated distribution of line energy density along a line focus in a substrate for different pulse energies. This allows at least a qualitative illustration of the effect of pulse energy on the energy distribution in the substrate.

[0245] This way Figure 4The location of the maximum line energy density along the focus of the (here simulated) Airy beam can be determined, which within the substrate does not coincide with the location of the apex of the focus trajectory at 2.5 mm for any pulse energy. The maximum modification in the substrate preferentially occurs at the location of the maximum energy distribution in the substrate.

[0246] As shown in the diagram of Fig. 4 As can be seen, for a pulse energy of 76 µJ (lowest curve in the diagram), the line energy density has a maximum value of approximately 12 µJ / mm at a depth of approximately 2.4 mm. For a pulse energy of 342 J (uppermost curve in the diagram), the line energy density has a maximum value of approximately 118 µJ / mm at a depth of approximately 2.1 mm. The maximum value of the line energy density corresponds to Fig. 3Each is marked with a square. Consequently, the maximum value of the line energy density increases with increasing pulse energy. Furthermore, the position of the maximum shifts towards shallower depths with increasing pulse energy. Here, 0 mm is defined as the depth relative to the substrate surface, i.e., the substrate side facing the laser source.

[0247] Furthermore, the depth range within which a modification would occur in an exemplary glass material can be determined for each pulse energy, characterized by two circular areas. At a pulse energy of 76 µJ, the modification occurs along a depth range Δz of approximately 0.3 mm, and at a pulse energy of 342 µJ, along a depth range Δz of approximately 2 mm. Due to its curvature, the length of the line focus generating the modification between the two endpoints is greater than the distance Δz between the two points in the depth direction.

[0248] It can be observed that with increasing pulse energy, the modification becomes increasingly asymmetrical and the location of maximum damage increasingly moves away from the apex of the Airy trajectory at 2.5 mm, towards shallower depths.

[0249] This illustrates Fig. 4 , how the energy distribution introduced into the substrate material by the line focus can be controlled by adjusting the pulse energy. This can be done, for example, by adjusting the maximum line energy density, but also by adjusting the length of the line focus segment along which the substrate material is modified in the depth section Δz.

[0250] In relation to Fig. 4The term "line energy density" was used. This referred to the energy density along the focus trajectory of the Airy beam. Those skilled in the art understand that this representation primarily serves to better illustrate how a specific pulse energy setting affects the (spatial) energy distribution in the substrate. While the actual energy distribution in the substrate, which generates the modifications, is fundamentally determined by the line energy density of the focus discussed here, other factors can also influence the energy distribution. For example, due to absorption and defocusing by the plasma generated in the material—also known as plasma shielding—there may be an upper limit to the maximum energy density in the substrate that cannot be exceeded even by increasing the line energy density of the focus. This effect is also referred to as intensity clamping.

[0251] In Fig. 5 The graph shows the course of the depth position of the experimentally determined maximum of the material modification for different pulse energies.

[0252] Several modifications were introduced into a substrate, with a different pulse energy set for each modification. The position of the modification's maximum was then determined for each modification, which can be assumed to also correspond to the maximum line energy density. The apex of the associated line focus was set at the same depth for all modifications.

[0253] Again, only relative statements are possible when comparing two positions. With increasing pulse energy, the depth of the maximum changes (towards shallower depths), with the trend being approximately linear.

[0254] Figure 6shows the influence of the offset of a laser beam on the cubic phase mask on the position of the maximum of the focus intensity and thus effectively also the energy distribution in the substrate along the focus trajectory.

[0255] That is, in the present case, the effect of an offset between the input beam and the cubic phase mask on the relative positioning of the maximum of the energy distribution and the vertex of the Airy trajectory was investigated by means of simulation.

[0256] For illustrative purposes, with a centered input beam, it is assumed that the position of the vertex and the maximum of the energy distribution coincide. (In reality, this would correspond to the case where the line focus and the energy distribution are considered in a vacuum.) Of course, this is not the case when the line focus forms in the substrate material; instead, there can be a discrepancy between the location of the vertex and the location of the maximum. With increasing offset (denoted by dx in the left part of the Fig. 6 ) of the input ray (marked by a circle) within the horizontal plane of symmetry (mirror plane) of the phase distribution, the location of the maximum of the energy distribution is shifted relative to the vertex of the Airy trajectory.

[0257] In the right part of the Fig. 6 It is shown how, when the offset is changed from -0.5 mm to 0.5 mm, the energy distribution 15 along the Airy line focus trajectory 17 changes. Fig. 6 is moved from top to bottom.

[0258] Fig. 7 shows the course of the dependence between the offset dx of a laser beam on the cubic phase mask from its saddle point and the position of the maximum of the line energy density along the focus trajectory.

[0259] The mean value of the z-positions (i.e., the depth positions) of the corresponding material modification endpoints was used as the experimental location (which are approximately in Fig. 3 (areas marked by circular areas).

[0260] The slope of the fit ("fit"; solid line in Fig. 7 The deviation of the experimental data ("Data") is 0.065. This means that for the focusing underlying the data, a focus shift in the z-direction (in air) of 65 µm is achieved for every one millimeter displacement of the beam on the cubic phase mask.

[0261] In Fig. 7The theoretically expected curve is also shown as a dotted line. The theoretical curve for an offset of dx results as a change in focal length df of the cubic phase mask according to the equation given again here: df = 1 1 f 0 + 2 β 3 dx k 0 − f 0

[0262] These are: k0 is the wave vector with k0 = 2*pi*n / Lambda, with wavelength Lambda, here 1030 nm, and refractive index n of the medium within which the focus is formed, here n=1; f0 is the focal length of the focusing optics, here 10 mm; Beta is the scaling factor of the cubic phase phi, with φ = exp iβ 3 ∗ x 3 + y 3 hier mit β = 3 1 / 3 mm − 1 for x and y in mm.

[0263] The explanations show, and thus once again with regard to Figure 1By influencing the laser beam 3 through the phase mask 5, for example by shifting the phase mask relative to the laser beam 3, and by adjusting the pulse energy of the laser beam 3, the energy distribution introduced into the substrate by the line focus can be reliably controlled. This allows modifications in the substrate 9 to be formed reliably and symmetrically.

[0264] Primarily through the coordinated selection of pulse energy and the influence of the phase mask on the laser beam (for example, by choosing the offset of the laser beam from the saddle point of the phase mask), the position of the maximum of the energy distribution within the substrate (in the enlarged partial representation of the Fig. 1 (characterized by a Δz 1) can be reliably controlled. Influence of the focal length of the focusing optics

[0265] Fig. 8This illustrates the influence of the focal length of the focusing optics on an Airy laser beam. For constant Cubic phase (with beta = 3 1 / 3 < x 10 3 < / m); laser wavelength (with lambda = 1.030 x 10 -6 < m); and beam diameter (diameter of the raw beam w 0 = 5 x10 -3 < m) takes the length of the focus area (in relative definition: falloff to 1 / e) 2 of the maximum value) with increasing focal length (curve with solid line in Fig. 9 ) and the angle that the focus at the upper and lower ends has to the optical axis (curve with dashed line in Fig. 9 The left ordinate therefore refers to the solid line and the right ordinate refers to the dashed line. Examples of how to create a beam offset

[0266] Fig. 9a-cThese figures show various methods for creating an offset of the laser beam on a phase mask. It can be assumed that the saddle point of the phase function on the respective phase mask, and thus the central point, is located at the geometric center of the respective phase mask.

[0267] Fig. 9a shows an optical setup 1', which is similar to the one in Fig. 1 The optical setup shown is 1. Therefore, identical features are also marked with the same, but simply crossed-out, reference symbols.

[0268] In Fig. 9a The optical system is labelled 19' and its optical axis 21'. In addition to the phase mask 5' and the focusing optics 7', the optical system 19' also includes a deflection optics 23'.

[0269] The laser beam 3' is deflected by this deflection optic 23', so that it runs obliquely to the optical axis 21'. This is clearly visible on the central axis 25' of the beam 3', which runs obliquely (and no longer parallel to the optical axis 21') after the deflection optic 23'.

[0270] Due to the deflection, the laser beam 3' strikes the phase mask 5' with an offset of 27'. The point of impact of the laser beam 3' (more precisely, the location of the center of mass of the beam cross-section in the plane of the phase mask 5') on the phase mask 5' therefore exhibits a lateral offset of 27' with respect to the center point 29' of the phase mask 5'.

[0271] Fig. 9b shows an optical setup 1", which is similar to the one in Fig. 9a The optical setup shown is 1'. Therefore, identical features are also marked with the same reference symbols, but with two strokes.

[0272] However, the 19" optical system does not have a 23" deflection optic, or rather, it is (as in Fig. 9b ) without effect, so that the beam 3" is not deflected. However, the phase mask 5" is shifted perpendicular to the beam direction, so that the laser beam 3" strikes the phase mask 5" with an offset of 27".

[0273] Fig. 9c shows an optical setup 1‴, which is similar to the one in Fig. 9a optical setup 1' shown and to the one in Fig. 9b The optical setup shown is 1". Therefore, identical features are also marked with the same reference symbols, but with three strokes.

[0274] The optical system 19‴ has a deflection optic 23‴ which generates an offset 27‴ of the laser beam 3‴, as can be clearly seen by comparing the course of the central axis 25‴ of the laser beam 3‴ before and after the deflection optic 23‴.

[0275] As a result, the laser beam 3‴ strikes the phase mask 5‴ with an offset of 27‴. However, the center point 29‴ of the phase mask 5‴ (as in the optical setup 1' in Fig. 9a ) on the optical axis 21‴.

[0276] In Fig. 9d Figure 23 shows one realization of the deflection optics 23‴. The deflection optics 23‴ can have a rotated plate 31‴. This generates the offset 27'''. Phase functions

[0277] Various exemplary phase functions that can be imposed on a laser beam and that can be used as a phase mask for the method according to the invention are shown in the following table: Acceleration profile phase Parabolisch:c(z) = az 2< ϕ ( y ) = -4 / 3 a 1 / < 2< k y 3 / 2 < Quaternary: c(z) = az 4< ϕ ( y ) = -16 / 21 (3a) 1 / < 4< ky 7 / 4 < Logarithmic: c(z) = a ln( bz ) ϕ ( y ) = e -1< a 2< bk (1-exp[- y / a ]) Polynomial: c(z) = az n< (for even n) ϕ y = kn 2 y 2 a 1 − n / y 1 / n 2 n − 1 1 − n

[0278] The parameters are described in the publication Froehly, L., Courvoisier, F., Mathis, A., Jacquot, M., Furfaro, L., Giust, R., & Dudley, JM (2011). Arbitrary accelerating micron-scale caustic beams in two and three dimensions. Optics express, 19(17), 16455-16465.

[0279] Preferably, the optical setup for generating the above-mentioned phase functions is an optical setup with a telescopic setup for focusing the laser beam. Other embodiments

[0280] Fig. 10a Figure 3 shows a rectangular substrate 33 in a cross-sectional view. Within the substrate 33, the substrate material was modified in a region 35 due to the energy deposited in the substrate 33 by means of the line focus, in particular through an interaction between the energy and the substrate material.

[0281] The curved area 35 is completely enclosed within the substrate 33.

[0282] Therefore, according to the invention, in embodiments, material is removed from the substrate 33, for example by etching. This can be done along the principal extension direction H of the curved region 35 (or the corresponding line focus), which in this case runs perpendicular to both cover surfaces 37. In other words, material is removed from the two cover surfaces 37 of the substrate 33. The new cover surfaces 37 of the substrate 33 are thereby, so to speak, displaced along the principal extension direction H. This is in Fig. 10b to be seen. It can also be seen that the substrate material 35 affected in the enclosed curved area 35 becomes accessible by removing substrate material from the outside, since parts of the affected substrate material are now located on the surface of the cover surfaces 37.

[0283] The curved area 35 has a profile that is not influenced by surface effects (such as those of the cover surfaces 37), since the interaction takes place entirely within the substrate 33 ( Fig. 10a ).

[0284] Due to the accessibility of the modified substrate material 35 ( Fig. 10b ), the substrate can then be further processed as described in Fig. 10c This is illustrated. For example, the affected material is removed by etching and the substrate is divided. Other aspects

[0285] Fig. 11 Figure 16 shows a top view of a substrate processed using the inventive method. In particular, the normal vector of the formed surface (i.e., the curved parting line) runs in the plane of Figure 16. Therefore, it can be seen in Fig. 11 The curved shape of the separation surface is also particularly advantageous.

[0286] Above all, the symmetrical shape of the curved separation surface can be seen.

[0287] The laser beam used ran parallel to the drawing plane of the Fig. 11 , as indicated by the arrow.

[0288] The following general parameters and laser parameters were set for laser processing: Substrate material with a thickness selected from the range between 900 and 1000 µm, for example BF33; a pitch of 40 µm; microscope objective and / or Fourier lens with a focal length of f = 10 mm; x 2.0 beam expander (with a 10 mm diameter Gaussian input beam); pulse duration = 5 ps; number of pulses in the burst of N = 2; energy per burst of 300 µJ; and wavelength of 1030 nm; cubic phase φ = exp(i * ( x 3< + y 3< )), equivalent to φ = exp iβ 3 ∗ x 3 + y 3 with β = 3 1 / 3< mm -1< for x and y in mm;

[0289] By choosing a sufficiently large pitch, as shown here, interactions between neighboring areas in the substrate with modifications are avoided or at least greatly reduced.

[0290] Fig. 12 The image on the left shows top views of the substrate using transmitted light microscopy, specifically after the laser process but before etching (the view is parallel to the laser propagation direction). The lateral extent of the modifications is visible, with multiple modifications shown for each of three selected, different depths in the substrate. The respective depths are shown in the right part of the image. Fig. 12 marked.

[0291] When introducing the modification, a sufficiently large pitch was chosen so that the extensions of the laterally angled / arrow-shaped modifications overlap only minimally. This ensured that propagation within the material would not be, or only minimally, disturbed by previous modifications.

[0292] The "zigzag" pattern thus results from the laterally extended modifications near the focus, while the modifications themselves remain on a straight line. Furthermore, the apex of the curved line focus was advantageously positioned centrally between the two top surfaces, and the line focus was formed entirely within the substrate material. Additional aspects

[0293] Fig. 13a Figure 1 iv< shows an optical setup with which the spherical aberration and, advantageously, also the tilting of the modification in the substrate can be controlled. The optical setup 1 iv< is similar to those shown in the Figs. 9a to 9c The optical setups shown are 1', 1" and 1‴. Therefore, identical features are also marked with the same reference symbols, but with four strokes.

[0294] The focusing optic 7 iv< is an imaging optic which exhibits spherical aberration. When the laser beam passes through this focusing optic 7 iv<, it acquires a spherical aberration, preferably depending on its point of impact on the focusing optic 7 iv<.

[0295] The focusing optics 7 iv< could have a lens with spherical aberration whose phase satisfies the following equation: ϕ lens ρ = k 0 ∗ ρ 2 2 f + aρ 4

[0296] The deflection optics 23 iv< are currently deactivated, so the beam 3 iv< is not deflected. If it is activated, the point of impact of the laser beam 3 iv< on the focusing optics 7 iv< could (also) be adjusted by means of the deflection optics 23 iv<, and thus the spherical aberration of the laser beam 3 iv< and / or the tilt of the modification introduced into the substrate could also be changed.

[0297] However, the deflection optics 23 iv< are deactivated and therefore have no effect, so the beam 3 iv< is not deflected. However, the focusing optics 7 iv< are shifted perpendicular to the beam direction, so that the laser beam 3 iv< strikes the focusing optics 7 iv< with an offset 27 iv< from the center point 39 iv< .

[0298] The offset 27 iv< gives the laser beam an adapted spherical aberration, so that the energy distribution introduced within the substrate 9 iv< along the line focus 17 iv< can be changed and / or shifted.

[0299] Fig. 13b This shows the intensity profiles of a laser beam along a depth direction of a substrate for differently set spherical aberrations. For example, in the optical setup 1 iv<, the offset 27 iv< can be changed so that the line focus formed in the substrate 9 iv< has a different energy distribution.

[0300] With increasing spherical aberration, the intensity of a rear section of the line focus (i.e., a section towards greater depths z in the substrate) can be increased. This allows for better modification across the entire depth range and / or with reduced laser power in the substrate material.

[0301] Fig. 13c shows three substrates (shown on the left, center and right in the figure) with modifications introduced at differently set spherical aberrations and offsets of the input beam.

[0302] In each case, the spherical aberration was corrected by a different offset (compare the one in relation to Fig. 13a The offset 7 iv< ) of the laser beam and the focusing optics of the optical system used for this purpose is set.

[0303] For the modification of the in Fig. 13c The substrate shown on the left was set to an offset of 0 mm, meaning there is no offset. For the modification of the substrate shown in Fig. 13c An offset of 0.7 mm was set for the substrate shown in the center. For the modification of the in Fig. 13c The substrate shown on the right was set with an offset of 1.4 mm.

[0304] The three in Fig. 13cThe substrates shown are all of the same thickness and aligned with their top surfaces. Therefore, Fig. 13c It can be deduced that with increasing offset, the modification becomes longer and also extends to greater depths (in the Fig. 13c This process is more pronounced along the vertical axis (with increasing depth downwards). This is because the energy distribution along the line focus trajectory is also introduced into the substrate material over a longer period and is more pronounced towards the rear, where it is controlled as the spherical aberration increases, as shown. Further advantageous features regarding dynamic influence

[0305] With regard to dynamic control, it has been found to be particularly advantageous that the phase mask and / or a DOE, in particular an impact point of the laser beam on the phase mask, a focus length, in particular a focus length of a microscope objective of the optical setup, a spherical aberration of the laser beam, in particular an impact point of the laser beam on a lens, and / or the pulse energy of the laser beam can be selected as parameters for dynamic control and can be changed individually as well as in any combination for dynamic control in a time-dependent manner. Exemplary process parameters and the resulting modification

[0306] Several experiments (1-5) were conducted in which modifications were introduced into a glass substrate using a laser. The corresponding process parameters, in particular the settings for different laser parameters, information on the optical setup (for example, beam offset on the phase mask or microscope focus length), and the number of bursts ("number of shots"), are given in the table below. The optical setup used in the experiments can be similar, for example, to that described in relation to Fig. 13a The described optical structure is...

[0307] Experiments 1-5 represent examples of dynamic manipulation, as the respective modification was introduced into the substrate by a time-dependently changing line focus (resulting from a time-dependent change in the offset of the laser beam on the phase mask).

[0308] The last four rows of the table contain information on the modifications introduced into the respective substrate in experiments 1-5. The "length of the modification in the substrate" is measured along the substrate thickness. The "offset of the modification along the thickness direction of the substrate" indicates the vertical distance from the center of the substrate to the location of maximum material damage. The "overlap of modifications" indicates the degree to which adjacent modifications resulting from shifting the energy distribution along the trajectory overlap. Here, the values ​​multiplied by 100 represent the overlap in percent (a negative value would indicate a gap between two modifications).(Although a discrete process is preferably used here to introduce adjacent defects along the trajectory into the substrate material, in other advantageous embodiments it would also be conceivable that the modification is continuously propagated within the substrate material.) The "maximum substrate thickness" indicates the maximum substrate thickness that can be processed with the given process parameters. The processable substrate thickness advantageously results from the modification length of all individual shots, taking into account the length of a single modification (here: "length of the modification in the substrate") and the overlap of the modifications.

[0309] In the table, as an example of the dynamic case, each column refers to a multitude of shots at different depths, but from a lateral position. In contrast, the table shows... Fig. 13cThe individual modifications that correspond to the static case. The values ​​in column 1 of the table result from comparing the middle and right modifications in Fig. 13c . parameter 1 2 3 4 5 Laser wavelength [nm] 1030 1030 1030 1030 1030 Pulse duration [ps] 5 5 5 5 5 Number of pulses in the burst 4 4 4 4 4 Beam diameter [mm] 5,3 2,65 1,1 1,1 1,1 Laser parameter Beta [1 / mm] 1,44 1,44 2,47 1,44 1,82 Focus length of microscope objective [mm] 10 10 10 22,4 31,6 Beam offset on phase mask [µm] 713 2500 1000 1000 500 Number of shots 2 8 20 20 10 Energy per burst [µJ] 144 72 30 67 95 Length of modification in the substrate [µm] 510 255 529 529 2117 Offset of the modification along the thickness direction of the substrate [µm] 72 254 508 508 1015 Overlap of modifications 0,86 0,00 0,04 0,04 0,52 Max. substrate thickness [mm] 0,58 2 10 10 11 Influence of the beam cross-section

[0310] Fig. 14a The figure on the left shows a cubic phase mask with an inscribed circular area representing the cross-section of a laser beam striking the phase mask. A material modification was introduced into a glass substrate using a laser beam with such a cross-section in the plane of the phase mask.

[0311] In Fig. 14aThe image on the right shows a top view of the substrate. This image depicts the surface of the substrate facing the phase mask. The material modification caused by the main maximum of the line focus is visible on the far right. The material modifications caused by the secondary maxima of the line focus form arrow-shaped / angled extensions.

[0312] Fig. 14b The figure on the left again shows the cubic phase mask with an inscribed oval area representing the cross-section of another laser beam incident on the phase mask. A material modification was introduced into another glass substrate using a laser beam with such an oval cross-section in the plane of the phase mask.

[0313] In Fig. 14bThe image on the right shows a top view of the substrate. This image depicts the surface of the substrate facing the phase mask. The material modification caused by the main maximum of the line focus is again visible on the far right. Due to the elongated beam cross-section, the material modifications caused by the secondary maxima become more compact and smear out into circular-segment-like structures on the surface. Within the substrate itself, these modification structures are arranged in an onion-skin-like pattern. Furthermore, a clearer contrast is visible between the main and secondary maxima and the modifications they each cause.

[0314] Due to the more compact damage area in the substrate, neighboring modifications interfere less with each other. Furthermore, more favorable crack formation along several adjacent modifications was observed when forming a parting line. This was even the case with a comparatively large pitch of, for example, 1 µm or more, or even 10 µm or more. This may be attributed to the fact that the secondary maxima can run parallel to the cut edge. Reference symbol list

[0315] 1, 1', 1", 1', 1 iv< Optical setup 3, 3', 3", 3', 3 iv< Laser beam 5, 5', 5", 5', 5 iv< Phase mask 7, 7', 7", 7', 7 iv< Focusing optics 9, 9', 9", 9', 9 iv< Substrate 11 Substrate 13 Substrate area 15 Energy distribution 17, 17', 17", 17', 17 iv< Line focus trajectory 19', 19", 19', 19 iv< Optical system 21', 21", 21', 21 iv< Optical axis 23', 23", 23', 23 iv< Deflection optics 25', 25", 25‴, 25 iv< Central axis of the laser beam 27', 27", 27‴, 27 iv< Offset 29', 29", 29‴ ​​Center of the phase mask 31‴Plate 33Substrate 35Area 37Cover surface 39 iv< Center of the focusing optics dDistance D, D', D", D‴, D iv< Distance f, f', f", f‴, f iv< Focus length HMain direction of extension RDirection ω 0 Beam diameter Δz, Δz 1 , Δz 2 Depth range

Claims

1. Method for controlling an energy distribution (15) introduced by means of at least one line focus of at least one laser beam (3, 3', 3", 3"', 3iv) within a substrate (9, 9', 9", 9"', 9iv, 11), wherein the method comprises: forming the line focus at least regionally within the substrate (11) and controlling the energy distribution (15) within the substrate at least partly by influencing the laser beam (3, 3', 3", 3"', 3iv) by means of, at least, at least one phase mask (5, 5', 5", 5‴, 5iv) and introducing at least one modification in the material of a substrate region (13) along the line focus that is formed and controlled with respect to the energy distribution, characterized in that the laser beam (3, 3', 3", 3"', 3iv) is influenced time-dependently by means of at least the at least one phase mask (5, 5', 5", 5‴, 5iv) and hence the shape and / or position of the energy distribution (15) is changed time-dependently.

2. Method according to Claim 1, wherein the laser beam (3, 3', 3", 3"', 3iv)is influenced at different, preferably immediately successive, time periods by different regions of the phase mask (5, 5', 5", 5"', 5iv).

3. Method according to Claim 2, wherein the centroid of the beam cross section existing in the plane of the phase mask (5, 5', 5", 5‴, 5iv) during the different time periods has different points of incidence thereon.

4. Method according to any of Claims 1 to 3, wherein the energy distribution (15), preferably at least a maximum of the energy distribution, is moved within the substrate (9, 9', 9", 9‴, 9iv, 11), in particular from a greater to a lesser depth and / or along the focus trajectory (17, 17', 17", 17"', 17iv) within the substrate (9, 9', 9", 9‴, 9iv, 11), by way of the time-dependent influence.

5. Method according to any of the preceding claims, wherein the at least one phase mask is a phase mask (5, 5', 5", 5‴, 5iv) having a cubic phase distribution or a phase distribution of higher order, in particular higher odd order, and / or the phase mask (5, 5', 5", 5"', 5iv) is arranged in the beam path of the laser beam (3, 3', 3", 3"', 3iv) upstream of the substrate (9, 9', 9", 9‴, 9iv, 11), and in particular the laser beam (3, 3', 3", 3‴, 3iv), preferably the centroid of the beam cross section existing in the plane of the phase mask (5, 5', 5", 5"', 5iv), has a point of incidence on the phase mask (5, 5', 5", 5‴, 5iv).

6. Method according to any of the preceding claims, wherein forming the line focus comprises that the position of the vertex of the curved line focus is adjusted along a depth range of the substrate (9, 9', 9", 9"', 9iv, 11) and wherein the position of the vertex of the line focus is centred along the depth range (Δz, Δz1, Δz2) of the substrate (9, 9', 9", 9‴, 9iv, 11).

7. Method according to any of the preceding claims, wherein controlling the energy distribution (15) within the substrate (9, 9', 9", 9"', 9iv, 11) furthermore comprises adjusting the pulse energy, the pulse duration, the number of pulses in the burst, the energy distribution (15) in the burst and / or the laser wavelength.

8. Method according to any of the preceding claims, wherein influencing the laser beam (3, 3', 3", 3‴, 3iv) by means of at least the at least one phase mask (5, 5', 5", 5"', 5iv) comprises that the laser beam (3, 3', 3", 3"', 3iv) is incident offset from the centre point of the phase mask (29', 29", 29‴), wherein the centre point is the location of the phase mask where a laser beam (3, 3', 3", 3"', 3iv) with a diameter tending to zero incident on the phase mask (5, 5', 5", 5‴, 5iv) is influenced by the saddle point of the phase distribution impressed on the phase mask, and wherein preferably the offset (27', 27", 27"', 27iv)) is implemented within the mirror plane of the phase distribution.

9. Method according to Claim 8, wherein (i) the offset (27', 27", 27‴, 27iv) is adjusted (a) by moving the phase mask (5, 5', 5", 5‴, 5iv) relative to the laser beam (3, 3', 3", 3"', 3iv); (b) by at least one rotated plane-parallel plate (31‴), in particular composed of a glass material and / or an optical material, which is preferably transparent at the laser wavelength; (c) by at least two prisms arranged one after the other in the beam path, the prisms preferably having the same prism angles; and / or (d) by translating, in particular within the beam path and / or parallel to the direction of the incident beam, a deflection mirror that deflects the laser beam; and / or (ii) the offset (27', 27", 27‴, 27iv) is adjusted by deflecting the laser beam (3, 3', 3", 3‴, 3iv) by means of at least one first means such that the direction vector of the beam incident on the phase mask (5, 5', 5", 5"', 5iv) makes an angle with the direction vector of the centre axis of the phase mask (5, 5', 5", 5‴, 5iv) .

10. Method according to Claim 9, wherein the deflection is adjusted by means of the first means, comprising (a) at least one rotatably mounted prism; (b) at least one rotatably mounted mirror; (c) at least one polygon or galvo scanner; (d) at least one acousto-optic modulator; (e) at least one liquid crystal on silicon spatial light modulator; and / or (f) at least one microelectronic mirror component.

11. Method according to any of the preceding claims, wherein the intensity distribution of the laser beam (3, 3', 3", 3‴, 3iv) on the phase mask (5, 5', 5", 5‴, 5iv) is changed at the location of incidence of the beam on the phase mask (5, 5', 5", 5‴, 5iv), preferably moved spatially on the latter.

12. Method according to any of the preceding claims, wherein two or more line foci of two or more laser beams (3, 3', 3", 3"', 3iv) are formed correspondingly within the same region in the substrate (13), preferably at least partly in parallel and / or at least partly sequentially over time, and the energy distribution (15) introduced into the substrate (9, 9', 9", 9"', 9iv, 11) by them is controlled correspondingly in each case.

13. Method according to Claim 6, wherein (a) the energy distributions (15) introduced by the individual line foci are different with regard to position and / or shape, wherein preferably the maxima of the individual energy distributions exist at different positions within the substrate (9, 9', 9", 9‴, 9iv, 11), and / or (b) the trajectories (17, 17', 17", 17‴, 17iv) of the two or more line foci are congruent.

14. Method according to any of the preceding claims, wherein the orientation of at least one portion of the line focus within the substrate (9, 9', 9", 9"', 9iv, 11) relative to the main propagation direction of the laser beam in the substrate is adjusted by controlling the energy distribution (15) within the substrate (9, 9', 9", 9"', 9iv, 11) and furthermore by adapting the focus position in the substrate material, wherein preferably adapting the focus position takes place by changing the distance (D, D', D", D‴, Div) between a focusing optical unit (7, 7', 7", 7"', 7iv) and the substrate and / or the thickness of the substrate (9, 9', 9", 9"', 9iv, 11) is less than half the length of the line focus potentially possible for a given optical set-up along the thickness extension of the substrate (9, 9', 9", 9"', 9iv, 11).

15. Method according to any of the preceding claims, wherein by means of the energy distribution (15) introduced by means of at least one part of the line focus, (a) the substrate (9, 9', 9", 9"', 9iv, 11) is modified at least regionally in terms of a material property, such as its density, its refractive index, its stress values and / or its etching rate, (b) microcracks are produced at least regionally in the substrate material, and / or (c) material is removed from the substrate (9, 9', 9", 9"', 9iv, 11) and / or displaced at least regionally.

16. Method according to any of the preceding claims, wherein the regions that are modified within the substrate (9, 9', 9", 9"', 9iv, 11) are opened by producing a mechanical and / or thermal stress and / or by an etching method, in particular in order to produce a through hole and / or a blind hole within the substrate material, and / or wherein they are opened along a closed contour and / or along a modification proceeding from substrate side to substrate side by way of mechanical, thermal and / or chemical processes, in particular in order to produce an inner or outer contour with a shaped side surface.