Stress-configurable nanoelectronic component structure, intermediate product, and method for producing a nanoelectronic component structure

Description

[0001] The present invention relates to an intermediate for the fabrication of a nanoelectronic device structure, wherein the intermediate comprises a substrate, at least one cavity formed in the substrate, and at least one nanostructure spanning at least partially the respective cavity. The invention further relates to a nanoelectronic device structure comprising a substrate, at least one cavity formed in the substrate, and at least one nanostructure spanning at least partially the respective cavity. The invention also relates to a method for fabricating a nanoelectronic device structure, in which at least one cavity is formed in a substrate and the respective cavity is bridged by at least one nanostructure.

[0002] Modern electronics demands ever greater functionality in terms of materials, while requiring less space and energy, in order to meet the demands of today's society and industry.

[0003] In this context, 1D and 2D nanomaterials or nanostructures based on them are ideally suited for use due to their mostly exceptional intrinsic properties such as dimensionality, resilience, electronic properties, highest sensitivity and quality with reduced energy dissipation.

[0004] Graphene, a two-dimensional form of carbon in which each carbon atom is surrounded by three others at a 120° angle, forming a honeycomb pattern, is currently the most sought-after and most studied nanomaterial. Among the 1D nanomaterials, nanotubes—elongated hollow bodies with a diameter of less than 100 nm—are in use. Carbon nanotubes are a well-known and thoroughly researched example. Similarly, nanowires made of silicon and various other materials exist.

[0005] One-dimensional nanostructures, such as carbon nanotubes, are now found in a wide variety of industrially relevant applications, including sensors, high-frequency transceivers, non-volatile memory, digital architectures, and security primitives for hardware. However, many of these applications still lack suitable, scalable, and reproducible integration technologies to fully utilize the aforementioned excellent properties within domains of constant physical structure and orientation of the nanomaterials, where the respective domain size is in the single- to double-digit micrometer range. The exceptionally high sensitivity factors for selected domain structures of piezoresistive sensors made from nanomaterials are representative of the significant influence of mechanical stress states.These have mostly only been measured in individual components, but due to insufficient comparability between the domains, they have not yet been manufactured in large quantities.

[0006] For example, under undefined stress and structural assembly states of the nanomaterials, parasitic surface distortions or effects such as slip-stick behavior can occur in one- and two-dimensional piezoresistive sensors or nanoresonators. These can lead to degradation of performance, such as hysteresis, drift, and increased variance in component properties, including band gaps, charge carrier mobility, and / or resonance frequencies. The surface distortions, for instance, prevent a homogeneous and wrinkle-free transfer of graphene onto a target substrate and also impair the electrical properties by locally altering the electronic material structure.

[0007] In addition to the aforementioned parasitic effects, the low area moment of inertia of nanomaterials has also made it impossible to detect mechanical compressive stress using piezoresistive sensors made of nanomaterials. Furthermore, the intrinsic variability of nanomaterials, resulting from differing assembly symmetries for two-dimensional nanostructures and chirality for one-dimensional nanostructures, inherently leads to variability in electronic properties. This has historically hindered the implementation of typical compensation circuits such as half-bridges or full-bridges.

[0008] Nanomaterials undoubtedly have enormous potential to decisively shape the "Beyond CMOS" era based on novel electronics concepts, such as 3D hyperintegration. However, controllable, scalable, and reproducible integration technologies are currently lacking, technologies that would allow, for example, the control of the mechanical stress state of nanostructures.

[0009] There are existing approaches in the art to selectively adjust or influence the mechanical stress state of nanomaterials.

[0010] Certain surface technologies can be used to establish permanent tension in manufactured nanomaterial components.

[0011] For example, it is theoretically conceivable to apply stressor-acting coating layers to nanomaterials, as is known from conventional silicon-based MOSFET technology, and possibly to structure them. However, this is associated with enormous challenges regarding process compatibility, so no publications on this topic exist.

[0012] Furthermore, technologies are known in which the respective nanomaterial zone is exposed and subsequently modified to achieve a fixed tension.

[0013] Furthermore, it is possible to introduce a prestress directly into the nanomaterial during its integration. This can be achieved using a transfer support membrane that is mechanically stretched as the nanomaterial is transferred to the structure being formed. However, this technology does not allow for the locally variable or multidirectional application of stress into the nanomaterial.

[0014] Furthermore, a temporary local modification of the strain state of clamped nanomaterials can be achieved, for example, by using a probe or a movable MEMS actuator fabricated directly on the sample. However, due to their high complexity and the demanding manufacturing technologies and operating conditions, such devices are only suitable for single-device investigations and not for scalable implementation in industrially relevant applications.

[0015] To locally modify the strain state of nanomaterials using probe microscopy techniques, for example, requires an immense amount of downstream control electronics and peripheral systems, such as those for vibration damping. Furthermore, effects caused by the strain or deformation of the nanomaterial at the probe and the probe's stray fields are no longer clearly distinguishable.

[0016] Thermal or electrostatic MEMS actuators combined with integrated nanomaterials require significantly more space and resources than the individual nanodevices, making them unsuitable for mass production. Furthermore, the tension of the nanomaterials within these devices is highly susceptible to vibrations and inertial movements without additional support, and may require additional energy to operate the actuator. The actuators' operating principle also introduces parasitic effects such as potential and / or temperature gradients into the system.

[0017] Furthermore, a weight placed on or attached to a nanomaterial membrane spanning a cavity can be used to induce mechanical stress, or a pressure difference can be created between a nanomaterial membrane and a volume of gas, fluid, or solid enclosed by this membrane within a cavity. Aside from the additional technological and actuator requirements, as well as the comparatively large space requirements and thus limited scalability, the stress directions in such arrangements are usually distributed in all spatial directions, necessitating very precise local placement of the nanomaterial to ensure the imposed stress states.

[0018] In summary, no nanomaterial devices have yet been demonstrated that are manufactured using scalable, parallel, wafer-level production and simultaneously allow for the targeted and scalable control and access to stress-state-dependent intrinsic effects within a nanomaterial domain boundary or across various nanostructures with high areal density. Instead, technologically highly complex and resource-intensive approaches such as MEMS technologies or probe manipulation have been demonstrated, primarily on individual components. However, these approaches require a comparatively large amount of space for the manipulation tools used to fabricate the nano-objects. BONITZ JENS ET AL: "Wafer-level technology for integration of carbon nanotubes into micro-electro-mechanical systems", 2016 IEEE 11TH ANNUAL INTERNATIONAL CONFERENCE ON NANO / MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS), IEEE, April 17, 2016 (2016-04-17), pages 595-599, DOI: 10.1109 / NEMS.2016.Document 7758322 discloses a piezoresistive mechanical device based on a silicon carbide nanotube (SWCNT). An SWCNT is embedded in metal electrodes for fixation and electrical connection. A deflection of the movable structure is detected by a corresponding change in the resistance of the SWCNT. The device includes an actuator. To fabricate the device, the actuator area is first patterned using a standard RIE process while the CNT contact area remains protected. Subsequently, the remaining silicon is removed by an isotropic dry etching process that includes lateral undercutting of the CNT contact areas. In the resulting structure, the gap between the movable and fixed parts is bridged by a passivation layer of SiO2 containing an SWCNT.In the final step, the CNT passivation and the buried oxide layer are removed by hydrogen fluoride vapor phase etching to expose the mobile structures and the electrode CNT sites.

[0019] It is therefore the object of the present invention to provide a nanoelectronic device structure with a defined, adjustable mechanical strain that can be fabricated using existing integration technologies, and optionally an intermediate for its fabrication. Furthermore, a method for fabricating a nanoelectronic device structure with adjustable mechanical strain that is compatible with existing integration technologies is to be proposed.

[0020] This problem is solved, firstly, according to the invention, by an intermediate product for the fabrication of a nanoelectronic component structure, wherein the intermediate product comprises a substrate, at least one cavity formed in the substrate, and at least one nanostructure spanning at least partially over the respective cavity, wherein the cavity is at least partially filled with a sacrificial material that is selectively etchable or dissolvable with respect to the substrate material, and wherein the intermediate product either has at least one projection on at least one side of the respective cavity that only partially spans the at least one cavity, so that a gap is formed over the at least one cavity, or has at least one projection spanning the cavity with a predetermined breaking point formed over the at least one cavity, wherein the at least one nanostructure is located on the at least one projection.Each gap or predetermined breaking point is arranged to span the gap or the predetermined breaking point and is covered on both sides of the gap or predetermined breaking point by a contact electrode.

[0021] The intermediate product according to the invention enables the formation of a nanoelectronic component structure with locally controllable or locally adjustable mechanical stress states.

[0022] For this purpose, the intermediate product comprises the substrate in which at least one cavity, each filled with the sacrificial material, is formed. The substrate can be made of silicon or another semiconductor material, for example. Other microelectronic and / or micromechanical structures, such as electrical connections, electrodes, channels, membranes, etc., can also be provided in, on, or beneath the substrate.

[0023] In the intermediate product according to the invention, the sacrificial material forms a suitable base for depositing the at least one extension and for applying the at least one nanostructure. Furthermore, the respective extension located on the sacrificial material can be well-structured and deposited thereon, resulting in the gap or the predetermined breaking point above the respective cavity.

[0024] The sacrificial material is selectively etchable or soluble compared to the substrate material, allowing it to be removed without affecting the substrate. After such at least partial removal of the sacrificial material, the portion of the cantilever extending beyond the cavity no longer has physical contact with the sacrificial material and can therefore relax. This allows for the controlled bending of the cantilever ends and the nanostructure located on them, thus introducing a specific mechanical stress into the nanostructure. Furthermore, the cantilever ends exposed by the removal of the sacrificial material can be treated in such a way that a specific stress builds up within them, which can then be used to tension the nanostructure located on the respective cantilever end.

[0025] If a gap already exists above the cavity between two cantilevers that each extend partially over the cavity, depending on the existing pre-tension of the respective cantilever, a cantilever end located next to the gap may, after such at least partial removal of the sacrificial material, bulge into the exposed interior of the cavity, bulge away from the cavity, or remain upright.

[0026] If a cantilever extending across the cavity initially has only a predetermined breaking point above the cavity, this point can be breached, for example, by ultrasound or mechanical force. This creates free cantilever ends on both sides of the breached point. Depending on the existing prestress of the respective cantilever, at least one of these ends can, after at least partial removal of the sacrificial material, either bulge into the exposed interior of the cavity, bulge away from the cavity, or remain directly above the cavity. The predetermined breaking point is a pre-structured separation or tear point. It forms a subsequently removable or openable retaining element, the removal or opening of which makes it possible to release a prestressing state originally introduced into the respective cantilever and thereby tension the nanostructure.

[0027] The predetermined breaking point can be severed by external mechanical and / or thermal and / or subtractive stimulation.

[0028] Since the respective nanostructure is located on at least one extension, it curves with the respective extension end, i.e. either into the cavity or away from the cavity, or remains just above the cavity.

[0029] In this process, at least one nanostructure is held in place on both sides of the cavity by one of the contact electrodes.

[0030] In a preferred embodiment of the intermediate structure according to the invention, at least one cantilever is under mechanical tensile stress. In this embodiment of the invention, after at least partial removal of the sacrificial material, at least one of the exposed cantilever ends, and thus also the nanostructure located thereon, bulges into the cavity.

[0031] By mechanically pre-tensioning or pre-tensioning at least one cantilever, both the electronic material properties, such as charge carrier mobility, and the component properties, such as quality factor and resonance frequency, of a nanoelectronic component structure produced from the intermediate product can be improved and even controlled.

[0032] Although the present invention does not include any exceptions regarding the usability of nanomaterials for the at least one nanostructure, graphene and / or at least one carbon nanotube are particularly suitable for forming the at least one nanostructure. These nanomaterials can be readily integrated into existing manufacturing technologies.

[0033] It has proven advantageous to use copper, tungsten, silicon dioxide, and / or aluminum oxide as sacrificial materials, as these materials are readily depositionable and possess the necessary etch selectivity with respect to silicon as the substrate. However, other sacrificial materials can also be used. The sacrificial material should be selectively removable from the cavity relative to the substrate material. Thus, the sacrificial material can be either inorganic or organic. Furthermore, the sacrificial material can be removed using subtractive methods, either dry or wet.

[0034] In an advantageous embodiment of the intermediate product according to the invention, at least one control electrode is arranged or formed in at least one of the at least one cavity. The respective control electrode consists of at least one electrically conductive material. In the intermediate product, the respective control electrode is typically located at the bottom of the cavity, beneath the sacrificial material, and can thus be exposed by removing the sacrificial material. Similar to a gate electrode in MOSFET structures, the control electrode can be used to influence the charge carriers in the nanostructure. In the present invention, the distance between the control electrode and the respective nanostructure is self-limiting due to the structure and process, adjustable via the thickness of the sacrificial material and / or the respective extension.Furthermore, in this embodiment of the invention, the depth of the cavity and the thickness, as well as the length of the respective extension projecting beyond the cavity edge, can be selected such that the end of the extension rests on the control electrode after removal of the sacrificial material, resulting in a "gate touchdown" of the extension on the control electrode.

[0035] The object is further achieved according to the invention by a nanoelectronic component structure comprising a substrate, at least one cavity formed in the substrate, and at least one nanostructure spanning at least partially over the respective cavity, wherein the nanoelectronic component structure has at least one extension on at least one side of the respective cavity, spanning only partially over the at least one cavity, so that a gap is formed over the at least one cavity, wherein the at least one nanostructure is arranged on the at least one extension, spanning the gap, and is fixed between the at least one extension and contact electrodes formed on both sides of the gap, and wherein the at least one extension is bent or shrunk at its end projecting over or into the respective cavity, so that the at least one nanostructure is under tension.

[0036] The nanoelectronic component structure according to the invention can be formed from an embodiment of the intermediate product described above.

[0037] In contrast to the intermediate product described above, the nanoelectronic component structure according to the invention contains no sacrificial material or only so little sacrificial material in the cavity that at least one projection above the cavity is exposed.

[0038] In the nanoelectronic device structure according to the invention, the at least one cantilever is either relaxed by the at least partial removal of the supporting sacrificial material from the respective cavity and thereby bent vertically, and / or contracted horizontally by shrinkage. Due to the relaxation of the intrinsic stress states and / or the targeted stress introduction by shrinkage, the lateral projection of the respective cantilever in the nanoelectronic device structure according to the invention is shortened compared to its lateral extension in the intermediate product. Furthermore, since in the nanoelectronic device structure according to the invention the at least one nanostructure is arranged on the at least one cantilever spanning the gap and is fixed between the at least one cantilever and the contact electrodes formed on both sides of the gap, the nanostructure is under tension.The nanostructure is thus placed in a stretched position in the nanoelectronic component structure according to the invention.

[0039] In the nanoelectronic component structure according to the invention, the at least one nanostructure has a mechanical stress set by the curvature and / or shrinkage of at least one cantilever end.

[0040] If at least one end of the extension curves into the cavity, then the at least one nanostructure located on that extension, and thus also curved into the cavity, is under tension. Therefore, the at least one nanostructure between the contact electrodes is mechanically under tension.

[0041] The same applies if at least one extension end curves away from the cavity, thereby also causing the nanostructure located on the at least one extension to curve away from the cavity.

[0042] If at least one end of the extension arm has shrunk, then at least one nanostructure lying on the respective end of the extension arm, held there by means of an electrode and extending over the cavity, is stretched, i.e., under tension.

[0043] This means that any bending or deformation of at least one cantilever caused by relaxation or shrinkage also changes its lateral projection, causing fixed points between the cantilever and the nanostructure on it to move away from each other, thereby introducing tensile stress into the nanostructure.

[0044] In the nanoelectronic device structure according to the invention, the at least one nanostructure extends over the respective cavity, thus decoupling the respective nanostructure from the substrate in the functionally active region. This allows the properties of the nanostructure to be kept free from parasitic influences of the substrate. The nanoelectronic device structure according to the invention therefore has at least one prestressed nanostructure decoupled from the substrate.

[0045] Decoupling from the substrate is important, for example, when the nanoelectronic component structure according to the invention is used as a nanoresonator or at least has a nanoresonator, in order to suppress parasitic interactions with the substrate.

[0046] The nanoelectronic component structure according to the invention can, for example, also be a piezoresistive nanomaterial strain sensor which, through the preload of the at least one nanostructure, is capable of detecting compressive stress for the first time.

[0047] The nanoelectronic component structure according to the invention has the advantage that it can be manufactured in a scalable and reproducible manner using common surface technologies.

[0048] Furthermore, the nanoelectronic component structure according to the invention is extremely energy-efficient, since no peripheral components are required that actively prestress the at least one nanostructure and consume energy. The prestress applied or adjustable to the at least one nanostructure is permanent.

[0049] In preferred embodiments of the nanoelectronic component structure according to the invention, the at least one nanostructure is under tension between the contact electrodes.

[0050] Preferably, in one embodiment of the nanoelectronic component structure according to the invention, a side of the at least one nanostructure facing away from the substrate is more tightly stretched than a side of the at least one nanostructure facing the substrate. To achieve this, for example, a side of the cantilever on which the respective nanostructure is arranged, pointing away from the substrate, can be shrunk more than a side of this cantilever adjacent to the substrate.

[0051] For example, to control the current flow in the at least one nanostructure, it is advantageous if at least one control electrode is arranged in at least one of the at least one cavity. Preferably, such a control electrode is arranged at the bottom of the respective cavity.

[0052] In an advantageous embodiment of the invention, the substrate has a plurality of cavities, each spanned by at least one of the nanostructures, wherein at least two of the cavities have different widths and / or depths and / or lengths, and / or at least two of the nanostructures have different widths and / or lengths, and / or at least two of the nanostructures are oriented in different spatial directions and / or are mechanically tensioned. In this way, the respective nanostructures can be designed with different tension levels and / or tension orientations, thereby enabling them to be designed for different measurement ranges and / or for detecting different force or stress vectors.Furthermore, in this way, any measurement errors can be compensated for and / or measurement signals can be amplified by the respective nanostructures, since, for example, in piezoresistive half-bridge circuits both sensor and compensation elements can be realized within a zone of homogeneous properties, i.e., within the domain boundary of the respective nanostructure.

[0053] In preferred embodiments of the nanoelectronic device structure according to the invention, the at least one nanostructure comprises graphene and / or at least one carbon nanotube. However, other nanomaterials, such as nanowires with a diameter in the range of up to a maximum of 100 nm made of other metals, non-metals or semiconductors, are also suitable for forming the at least one nanostructure.

[0054] In a favorable embodiment of the invention, at least one cavity contains a shrunken filler material on which at least one cantilever end rests or into which at least one cantilever end is embedded. Thus, in the nanoelectronic component structure according to the invention, at least one of the cantilevers can be brought into a new, permanently defined stress state due to the elimination of the previous cantilever fixation resulting from the removal of sacrificial material and by resting or embedding the respective cantilever on or into the shrunken filler material.

[0055] The filler material can be a material that, in addition to its shrinkage properties, also fulfills other purposes, such as passivating at least part of the nanoelectronic device structure and / or fixing at least one element of the nanoelectronic device structure. Passivation, for example, can achieve a hermetic shielding of the nanomaterial within the respective nanostructure.

[0056] Conversely, if the tensile stress of the respective nanostructure is solely due to the relaxation of strained cantilever ends, a passivation material that does not possess shrinkage properties can be used.

[0057] Alternatively, shrinking passivation can be used to brace a nanostructure that is located, for example, on cantilevers formed from only a single layer, which are not braced beforehand.

[0058] A bending of at least one cantilever and thus the tensioning of at least one nanostructure can be maintained permanently if at least one cantilever end of the respective cantilever projecting into at least one cavity is fixed by a filling material introduced into the respective cavity.

[0059] It is also possible to cover at least one nanostructure itself with the filler material in order to maintain its stress state.

[0060] The filling material is preferably a material that, in addition to its fixing properties, also fulfills other purposes, such as passivation of at least part of the nanoelectronic component structure and / or is shrinkable.

[0061] Thus, in the present invention, one and the same filling material can be used for adjusting the tension of the respective nanostructure by means of shrinking the filling material and / or for fixing at least one exposed extension and / or of nanostructures and / or for passivation.

[0062] If at least one mass body is arranged on each of the at least one nanostructure, the deflections of the at least one nanostructure can be amplified and / or the resonance frequency of the respective nanostructure can be adjusted, thus achieving frequency-dependent amplification and / or filtering of signals. The mass body can, for example, be formed from an exposed and / or exposed part of the respective cantilever on which the nanostructure rests. For example, this part of the cantilever could have become the seismic mass held by the nanostructure through the removal of sacrificial material from the cavity.

[0063] Using or based on at least one nanoelectronic component structure according to the invention, miniaturized sensor-typical compensation circuits, such as bridge or half-bridge circuits, can be designed. Such circuits can thus be realized within the domain size of the respective nanostructure used. This leads to reproducible and homogeneous component properties across many parallel-manufactured components. The bridge or half-bridge circuit makes it possible to design self-calibrating components with the highest signal-to-noise ratio and / or integrated drift correction.

[0064] The object is further achieved according to the invention by a method for producing a nanoelectronic component structure in which at least one cavity is introduced into a substrate and the respective cavity is bridged with at least one nanostructure, wherein the at least one cavity is at least partially filled with a sacrificial material, on the cavity at least partially filled with the sacrificial material either at least one cantilever is formed on one side of the respective cavity, spanning only part of the at least one cavity, so that a gap is formed above the at least one cavity, or at least one cantilever spanning the respective cavity with a predetermined breaking point is formed above the at least one cavity, the at least one nanostructure being formed or arranged on the at least one cantilever, spanning the respective gap or predetermined breaking point.On nanostructures formed on both sides of the respective cavity, a contact electrode is formed on each side of the respective nanostructure, subsequently the sacrificial material is at least partially etched or dissolved out of the respective cavity and, if present, the predetermined breaking point is breached.

[0065] The inventive method enables the fabrication of nanoelectronic device structures with locally controllable or locally adjustable mechanical stress states. In particular, defined stress states can be introduced in a location-specific and adaptable manner into individual or groups of 1D or 2D nanostructures.

[0066] The tension of at least one nanostructure can be adjusted in the sub-micrometer range, which also enables the creation of arrays with variable individual component properties in the smallest possible space. This is considered, for example, a fundamental requirement for imaging broadband sensors for mechanical stress, atomic / chemical species in the environment, and optical radiation.

[0067] The process steps of the method according to the invention are compatible with existing monolithic integration technologies. The method according to the invention can therefore be readily integrated into existing manufacturing processes or into heterosystem integration. The method according to the invention is also compatible with Beyond-CMOS and System-on-Chip technologies. This enables the creation of novel hybrid components with combined functionality from sensors, actuators, and electronics.

[0068] The process according to the invention does not require high temperatures. Therefore, process compatibility is ensured.

[0069] In the inventive method, a particularly high reproducibility of the component manufacturing can be achieved through self-limiting deposition of the nanomaterial used to form the at least one nanostructure.

[0070] However, it is also possible to produce at least one nanostructure independently of the substrate's manufacturing process and ultimately transfer it to the substrate. This approach has the advantage of eliminating incompatibilities in the production line that arise when using conventional processes. Furthermore, this transfer approach allows for the direct introduction of additional mechanical prestress into the nanomaterial of the respective nanostructure during the transfer process itself.

[0071] In this procedure, at least one preferably pre-ordered and aligned nanostructure is positioned on the previously processed substrate. This is followed by electrical contacting of the at least one nanostructure using a lithography technology adapted to it, and the removal of the at least one cantilever with the at least one nanostructure located on it, thereby establishing a predefined strain in the at least one nanostructure.

[0072] The inventive method allows the fabrication of self-referencing or self-calibrating circuits with nanoelectronic component structures that are created within a domain of the respective nanomaterial, which also compensates for the inherent drift in the component properties.

[0073] In preferred embodiments of the inventive method, at least one of the cantilevers is formed from at least two layers of such materials, using such process parameters and with such layer thicknesses, such that it is under mechanical tensile stress directly after the layer deposition steps, i.e., it exhibits a residual layer stress. In these embodiments, the respective cantilever is, for example, designed as a prestressed double layer that relaxes after the sacrificial material has been at least partially removed from the cavity.

[0074] However, tension can also be introduced into the respective boom only after its deposition, for example by shrinking the boom ends of the respective boom after its exposure through the removal of sacrificial material by means of tempering.

[0075] Enhanced functionality is provided by the arrangement of at least one control electrode in the vicinity of the at least one nanostructure. In one embodiment of the inventive method, one or more such control electrodes can, for example, be arranged or formed in at least one of the at least one cavities before it is at least partially filled with the sacrificial material. The respective control electrode can preferably be formed at the bottom of the respective cavity. Since the extraction or etching of the sacrificial material from the at least one cavity used in the inventive method is a self-adjusting process, it is possible not only to set the preload according to the design, but also to influence appropriate component properties, such as the distance from the control electrode to the at least one nanostructure and thus the operating point of the formed nanoelectronic component structure.

[0076] An array or module with different nanostructures, thus covering different measurement or functional areas, can be formed using the method according to the invention if at least two of the cavities are formed with different widths and / or depths and / or lengths and / or at least two of the nanostructures are oriented in different spatial directions and / or are mechanically clamped in different spatial directions. This technology allows for the parallel fabrication of nanostructures oriented in different spatial directions, i.e., multidirectional nanostructures. The respective geometries and / or orientations of the nanostructures allow for precise scaling.

[0077] This makes it possible to integrate nanostructures selected according to their properties with a controllable arrangement into the array or module.

[0078] Furthermore, by utilizing self-assembling effects, a parallel alignment of the nanostructures across the substrate can be achieved.

[0079] Nanoelectronic component structures with good reproducibility can be produced using the inventive method if graphene and / or at least one carbon nanotube is used as the material(s) for forming the at least one nanostructure.

[0080] The respective boom can also be defined and tensioned by introducing at least one filling material into the respective cavity after at least partial etching or removal of the sacrificial material from the at least one cavity, and subsequently shrinking this material by tempering and / or hardening.

[0081] After relaxation of the cantilever by at least partially removing the sacrificial material from the respective cavity, in an advantageous embodiment of the inventive method, the cantilever ends projecting into the at least one cavity can be fixed by introducing a filling material into the respective cavity.

[0082] The filling material can also be applied to at least one nanostructure in order to fix it and thus maintain the tension introduced within it.

[0083] Although a wide variety of filling materials can be used in principle in the present invention, it has proven advantageous to achieve good shrinkage properties if the at least one filling material comprises at least one silsesquioxane, such as hydrogen silsesquioxane, and / or at least one cross-linking polymer.

[0084] Particularly good deflection of the at least one nanostructure can be achieved if, in one embodiment of the method according to the invention, at least one mass element is formed on the at least one nanostructure. In the present invention, the at least one mass element can, for example, function as an inertial mass for an inertial sensor and / or mechanical resonator, or as an element of a plate capacitor for implementing a MEMS / NEMS actuator.

[0085] In a preferred embodiment of the method according to the invention, the at least one mass body is formed from the at least one cantilever during the at least partial etching or removal of the sacrificial material from the at least one cavity.

[0086] The stress on at least one nanostructure can be controlled particularly well if the at least one nanostructure is applied to the at least one extension using a stretched transfer carrier. With the stretched transfer carrier, for example, a prestressed nanomaterial layer can be applied to the entire substrate, from which at least one nanostructure with controlled stress and stress direction in the sub-micrometer range can then be formed by appropriately shaping the at least one underlying cavity and the at least one extension that spans the respective cavity.

[0087] Preferred embodiments of the present invention, their structure, function and advantages are explained in more detail below with reference to figures, wherein Figure 1 schematically shows an embodiment of a nanoelectronic component structure according to the invention in a sectional side view; Figure 2 schematically shows another embodiment of a nanoelectronic component structure according to the invention in a sectional side view; Figure 3 schematically shows yet another embodiment of a nanoelectronic component structure according to the invention in a sectional side view; Figures 4 to 12 schematically show process steps of an embodiment of the method according to the invention for producing the nanoelectronic component structure from Figure 1 each shows a cutaway side view through the respective structure; Figure 13 shows the nanoelectronic device structure made of Figure 12with inserted and applied filler material; Figures 14 to 17 schematically show process steps of a further embodiment of the inventive method for producing a nanoelectronic component structure, each in a sectional side view through the respective structure formed; Figure 18 schematically demonstrates the adjustability of the strain and the electrostatic coupling to the respective control electrode on nanoelectronic component structures according to the invention; Figure 19 schematically shows a nanoelectronic component structure according to the invention in the form of a CNT-FET array with individual strain of the respective nanostructures; Figure 20 schematically shows a further nanoelectronic component structure according to the invention with a heterogeneously distorted graphene layer;Figure 21 schematically shows another nanoelectronic device structure according to the invention in the form of an array with variable voltage states within a nanomaterial domain, and Figure 22 schematically shows a nanoelectronic device structure according to the invention in the form of a sensor half-bridge formed within a nanomaterial domain.

[0088] The Figures 1 to 3 schematically show possible embodiments of nanoelectronic component structures 1a, 1b, 1c according to the invention, each in a cut side view.

[0089] The nanoelectronic device structure 1a can be considered a kind of "core cell" of a prestressed nanomaterial system that can be formed with the present invention and is therefore well suited for demonstrating the invention. The nanoelectronic device structure 1a comprises a substrate 2, a cavity 3 formed therein, a control electrode 4 formed on a base 31 of the cavity 3, extensions 5 that partially overlap the cavity 3, and a nanostructure 6 resting on both free ends 51, 52 of the extensions 5 and covered on both sides by a contact electrode 71, 72. Because the two extensions 5 extend into the cavity 3, the nanostructure 6 resting on the ends 51, 52 of the extensions 5 is prestressed, as schematically shown by arrow ε 1.

[0090] The nanostructure 6 can consist of a 1D or 2D nanomaterial extending from a few hundred nanometers to several micrometers. The nanostructure 6 exhibits specifically controlled basic properties, such as chirality, diameter, and / or MW / SW. As will be explained in more detail below, the strain on the nanostructure 6 was generated using conventional surface technology processes. In the embodiment shown, a controlled tensile stress was introduced into the nanostructure 6 along a spatial axis.

[0091] The nanoelectronic device structure 1b made of Figure 2The substrate 2 comprises two different nanomaterial structures. The first of these nanomaterial structures, like the nanoelectronic device structure 1a, has a cavity 3 formed in the substrate 2, a control electrode 4 formed on a base 31 of the cavity 3, extensions 5 partially overlapping the cavity 3, and a nanostructure 6 resting on both free ends 51, 52 of the extensions 5 and covered on both sides by a contact electrode 71, 72. The second of the nanomaterial structures is without a cavity, i.e., formed on the substrate surface, and has a control electrode 4 over which one of the extensions 5 extends and opposite which a further nanostructure 6b is arranged, which is contacted on both sides by contact electrodes 71, 72.

[0092] In this arrangement, the strained nanostructure 6 and the unstrained nanostructure 6b, which serves as an internal reference for the nanostructure 6, are located on the same substrate 2.

[0093] The nanoelectronic device structure 1c made of Figure 3 The substrate 2 has two different nanomaterial structures embedded within it. Both of these nanomaterial structures, like the nanoelectronic device structure 1a, exhibit the following properties: Figure 1The substrate 2 comprises a cavity 3, 3a formed in the substrate 2, a control electrode 4, 4a formed on a base 31, 31a of the respective cavity 3, 3a, extensions 5 partially overlapping the respective cavity 3, 3a, and nanostructures 6, 6a resting on the respective free ends 51, 52; 51a, 52a of the extensions 5 and covered on both sides by a contact electrode 71, 72. However, the geometries of the cavities 3, 3a, and thus also the curvatures of the extension ends 51, 52; 51a, 52a into the respective cavity 3, 3a, and thus also the strains ε₁, ε₂ of the two nanostructures 6, 6a, are different.

[0094] As shown schematically by the dotted lines in the Figures 2 and 3 As indicated, the respective nanostructures 6, 6b and 6, 6a are each formed from one and the same nanomaterial. With the in Figure 3The schematically represented nanoelectronic device structure 1c thus enables local control of different voltage states within domain boundaries of the 1D or 2D nanomaterial used for the nanostructures 6, 6a.

[0095] The Figures 4 to 12 schematically show process steps of an embodiment of the inventive method for producing the nanoelectronic component structure 1a from Figure 1 .

[0096] As in Figure 4 To see, a substrate 2 is first provided.

[0097] In the Figure 5 In the process step shown, a control electrode 4 is created on the substrate 2.

[0098] Then, as in Figure 6 shown, a spacer layer 2' is deposited, which does not have to be made of the same material as the substrate 2, but is functionally associated with the substrate 2 in the present invention.

[0099] In the Figure 7 In the depicted process step, a cavity 3 is formed in the spacer layer 2'. The control electrode 4 is located at the bottom 31 of the cavity 3.

[0100] Cavity 3 will be described below, as in Figure 8 The structure is shown filled with a sacrificial material 8. The sacrificial material 8 can be of organic or inorganic origin. Preferably, the sacrificial material 8 is selected depending on the choice of material and the degree of tension of the cantilevers 5 produced in the subsequent process step, as well as its compatibility with the overall manufacturing process.

[0101] Then, as in Figure 9As can be seen, on the spacer layer 2' and the sacrificial material 8, extensions 5 are deposited on both sides and above the cavity 3, with a gap 50 existing between the extension ends 51, 52 of the extension 5 above the cavity 3. In other embodiments of the present invention, a single extension 5 can also extend over the cavity 3, and instead of the gap 50, a predetermined breaking point can be formed above the cavity 3 in this extension 5.

[0102] The cantilevers 5 can be created either by stacking at least two thin layers of different materials or by a single thin layer with process-induced tension within the layer during its deposition. This allows the intrinsic tension of the cantilever 5 thus created to be precisely adjustable and initially fixed, as it adheres to the underlying sacrificial material 8.

[0103] The following describes how in Figure 10As can be seen, a nanostructure 6 is applied to the support arms 5. Various methods can be used to apply the respective nanostructure 6. For example, selected and functionalized nanomaterials, such as carbon nanotubes (CNTs), can be applied in dispersed form as a nanostructure 6 by means of self-assembly, printing, dielectrophoresis, or thermophoresis, etc.

[0104] Alternatively, transfer processes can be used to deposit the nanostructure 6, offering enhanced control over its strain. These include, for example, CVD processes (chemical vapor deposition processes) for the synthesis of materials such as CNTs, graphene, MoS₂, or WS, or ALD processes (atomic layer deposition processes) for MoS₂ on a source substrate. A polymer-based transfer method using adhesion promoters and temporary transfer carriers, such as a film, transfers the nanostructure 6 onto the substrate 2, which has been preprocessed as described above.

[0105] In a particularly advantageous embodiment of the present invention, the transfer process of the nanostructure 6 can be carried out on a controlled stretched transfer carrier. This method allows for a comprehensive baseline stress to be achieved on the nanostructures of the respective nanoelectronic device structure, leading to homogenization, alignment, and smoothing of the respective nanostructures.

[0106] In a next, in Figure 11 In the process step shown, a contact electrode 71, 72 is deposited on each of the two nanostructure ends 61, 62 of the nanostructure 6. The result is the structure shown in Figure 11 Intermediate product 1a' according to the invention shown schematically.

[0107] Then, as in Figure 12The schematic representation shows the removal of sacrificial material 8 from cavity 3. The removal of sacrificial material 8 can be achieved by a suitable selective-subtractive surface technology process, such as dissolution or etching. The sacrificial material 8 can be removed chemically and / or thermally and / or by dissolution in water or another solvent and / or by ultrasound.

[0108] As it is in Figure 12 As shown schematically, the removal of the sacrificial material 8 simultaneously leads to a relaxation of the prestressed cantilevers 5 above it. Depending on the materials chosen and deposition characteristics, the cantilevers 5 bend into the plane or out of the plane.

[0109] The nanostructure 6, which is positioned on two opposing cantilevers 5 and fixed at its nanostructure ends 61, 62, experiences a tensile force at the moment of relaxation of the cantilevers 5 in the illustrated embodiment, since the fixed points of the nanostructure 6 on the cantilever ends 51, 52 move away from each other. At the same moment, the nanostructure 6 is released.

[0110] By removing the sacrificial material 8, the gap 50 between the cantilever ends 51, 52 also changes. The nanostructure 6 extends across this gap 50 and forms a freestanding, locally tensioned one- or two-dimensional structure of nanomaterial in the area between the fixed points. The removal of the sacrificial material 8 thus results in the nanoelectronic component structure 1a shown.

[0111] The magnitude of the generated tensile force, and thus the tension of the nanostructure 6, is defined by a specifically generated geometric design of the cantilevers 5. The overhang length, width, and height of the cantilever ends 51, 52 resulting after removal of the sacrificial material 8, the specifically introduced intrinsic tension, and the selected materials for the cantilevers 5 are the decisive parameters for generating a desired bending radius or a specific tension in the nanostructure 6.

[0112] The bending radius and overhang height are the determining factors for defining the maximum deflection of the cantilever ends 51, 52 and thus serve to more precisely limit and define the change in length of the nanostructure 6. Furthermore, the position of the fixation of the nanostructure 6 on the respective cantilever 5 is an important factor. The accuracy, resolution, and reproducibility are limited by the structuring method used. Electron beam lithography is typically employed, but this does not preclude the use of alternative micro- and nanostructuring methods. In the illustrated embodiment, this fixation is achieved by means of the contact electrodes 71, 72, which simultaneously serve for the electrical contacting of the nanostructure 6.

[0113] The surface technology described above is not limited to a specific substrate 2 and can also be integrated into a hetero system integration technology for, for example, system-on-chip or post-back-end-of-line.

[0114] The tension state of the cantilevers 5 and / or the nanostructure 6 can be adjusted using additive coating processes established in micro- and nanotechnology. By applying structuring methods such as optical lithography, this subsequent adjustment step can be performed locally or globally across the substrate 2.

[0115] In the embodiment shown, the nanostructure 6 in the stressed state does not touch the bottom 31 of the cavity 3 and is therefore free to hang.

[0116] In other embodiments of the present invention, the respective cantilevers 5 can consist of at least two layers and be intrinsically prestressed in such a way that, upon exposure, a bending in the direction of the substrate 2 with a stop occurs, and at a comparatively high tensile force of the cantilevers 5, the change in length of the nanostructure 6 is determined by the depth d and width w of the cavity 3, which is also in Figure 18 can be seen.

[0117] Figure 13 schematically shows the nanoelectronic device structure 1a from Figure 1 or 12, wherein both the cavity 3 and the area above the strained nanostructure 6 are filled with a filler material 9. The filler material 9 fixes the cantilever ends 51, 52 in their bent position in the cavity 3 and "freezes" the prestress of the nanostructure 6.

[0118] As can be seen from the exemplary nanoelectronic device structures 1a, 1b 1c shown, it is possible with the present invention to generate isolated, locally individually strained 1D or 2D nanomaterial structures by combining layers or layer stacks with intrinsic layer strains, sacrificial structures and controlled arrangement of 1D or 2D nanostructures 6, 6a, 6b.

[0119] The Figures 14 to 17 The figures schematically show process steps of a further embodiment of the inventive method for producing a nanoelectronic component structure, each in a cutaway side view through the respective structure formed.

[0120] Figure 14 corresponds to the current procedural status Figure 11The further embodiment of the method according to the invention described below therefore begins with an embodiment of the intermediate product 1a' according to the invention. The process steps for producing the intermediate product 1a' correspond to those described above with regard to the Figures 4 to 11 described process steps.

[0121] In the Figure 15 In the process step shown, the sacrificial material 8 is removed or etched out of the cavity 3.

[0122] Then in the Figure 16 In the process step shown, a filling material 90 is introduced into the cavity 3, wherein the boom ends 51, 52 of the booms 5 adhere to the filling material 90.

[0123] In the procedural step of Figure 17 The structure will be made of Figure 6exposed to an elevated temperature, at which the filler material 90 shrinks. As a result of the shrinkage of the filler material 90 in the cavity 3, the cantilever ends 51, 52 bend into the cavity 3. This puts the nanostructure 6 under tension.

[0124] Figure 18Figure 1 schematically demonstrates the adjustability of the tension and the electrostatic coupling to the respective control electrode 4 on nanoelectronic component structures 1a, 1d, 1e, 1f according to the invention. In the direction of arrow d, the depth of the respective cavity increases, while in the direction of arrow w, the width of the respective cavity increases. That is, cavity 3d is deeper than cavity 3, cavity 3e is deeper than cavity 3f, cavity 3e is wider than cavity 3d, and cavity 3f is wider than cavity 3. Regarding the further features of the nanoelectronic component structures 1a, 1d, 1e, 1f, reference is made to the above description of nanoelectronic component structure 1a, which also applies to nanoelectronic component structures 1d, 1e, 1f.

[0125] As can be seen from the illustrations of the Figure 18As can be seen, a wide cavity with a shallow depth d leads to increased bending of the respective cantilever ends 51, 52 into the cavity. As can be seen from the nanoelectronic component structure 1f, the bending of the cantilever ends 51, 52 can be so pronounced that they rest on the control electrode 4, which limits the bending and thus the stress on the nanostructure 6.

[0126] Figure 19Figure 1 schematically shows a nanoelectronic device structure 1g according to the invention, integrated into a single substrate 2 with a single cavity 3 and a single control electrode 4 formed at the bottom of the cavity 3, with a plurality of nanostructures 6 spanning the cavity 3. The nanoelectronic device structure 1g forms a CNT-FET array with individual strain on the respective nanostructures 6. The different strain on the nanostructures 6 is achieved here by the different geometries of the cantilevers 5, the nanostructures 6, and the contact electrodes 71, 72. As shown in Figure 1g, the nanostructures 6 are individually strained. Figure 19 As shown schematically by the double arrow, the strain can thus be individually adjusted in a range from low strain to high strain of the respective nanostructure 6.

[0127] In other embodiments of the present invention, a similar array as in Figure 19 can also be formed with changing geometry of cavity 3, such as gradually changing cavity depth and / or width.

[0128] Furthermore, it is possible to provide several control electrodes 4 on the cavity floor or above the respective passivation. The respective control electrode(s) 4 serve for the electrostatic control of the respective nanostructure(s) 6 and / or for setting at least one operating point.

[0129] Figure 20 Figure 1 schematically shows another nanoelectronic device structure 1h according to the invention with a heterogeneously distorted graphene layer 60. The graphene layer 60 has a continuous lattice structure.

[0130] Figure 21Figure 1 schematically shows another nanoelectronic device structure 1i according to the invention in the form of an array with variable stress states in an identical nanomaterial within a nanomaterial domain. In the illustrated embodiment, the respective nanostructures spanning the cavities 3 are designed as differently strained segments of one and the same 1D or 2D nanomaterial structure arranged along a spatial axis, with specifically set basic properties such as chirality, diameter, and / or MW / SW. The geometries of the cavities 3 located under the nanostructures are different. The individual segments can be modulated in their properties, such as their band gap or vibration frequency, by freely adjusting the strain level for each segment.This results in a material-variance-independent, one-dimensional array of different basic elements of the nanoelectronic device structure 1i, which, viewed as a closed unit, belongs to a new class of segment-specifically configurable, multifunctional nanoelectronic device structures based on 1D or 2D nanomaterial systems.

[0131] Due to the different strains of the nanostructures 6, these exhibit a targeted modification of the band structure, such as the band gap. This can be designed in such a way that it is accompanied by a modification of the electronic interaction between adsorbants or chemisorbants and the nanomaterial of the nanostructures 6.

[0132] The nanoelectronic device structure 1i can therefore be used, for example, as a biosensor which, based on the specific characteristics of the different voltage states on a substance to be detected, can identify it using deep learning approaches. The nanoelectronic device structure 1i can also be used for the specific detection of chemical or gaseous substances.

[0133] The respective miniaturized biological and / or chemical sensor and / or gas sensor developed on the basis of the present invention can have sensitivities in the atomic mass range and function in mass spectral mode.

[0134] The resonance frequency of the clamped and strained nanostructures 6 can be capacitively read out between the respective nanostructure 6 and the control electrode 4 as a measurement signal of the nanoelectronic device structure 1i. The resonance frequency can be controlled by modifying the applied mechanical stress, and therefore selectivity with respect to interaction with a specific substance can be achieved.

[0135] The measurement mechanism can, for example, be based on a mass change of at least one oscillating nanostructure 6 of the nanoelectronic device structure 1i, which results from atoms or molecules of a substance attaching to the nanostructure 6.

[0136] Furthermore, the differently strained nanostructures allow for the selective chemisorbation of 6 specific species.

[0137] In certain embodiments of the present invention, small mass bodies can be provided in or on the at least one nanostructure, either before or after its clamping. This allows the generation of broadband inertial sensors with vibration detection above 100 kHz and 3D acceleration capabilities.

[0138] Figure 22Figure 1 schematically shows a nanoelectronic component structure 1j according to the invention in the form of a sensor half-bridge formed within a nanomaterial domain of an identical nanomaterial. Due to environmental influences to be detected, such as mechanical, optical, and / or chemical influences, the sensor half-bridge has variable diagonal elements I and III and adjustable compensation elements II and IV. The half-bridge circuit is monolithically fabricated in one and the same material, i.e., within a single domain, and thus represents a highly sensitive, drift-free measuring circuit. Due to the technology used for their wiring according to the invention, the diagonal elements I and III, which function as sensor elements, can exhibit a piezoresistivity with a high coefficient of performance (h0). hen Gauge factor (e.g. of 400) while the two compensation elements II and IV remain unstressed due to layout-determined omission of the tensioning structure.

[0139] The half-bridge shown can be placed in a highly miniaturized form, for example on an area < 10 µm 2< , including the half-bridge wiring.

[0140] Such nanoelectronic device structures can be used to piezoresistively detect even the smallest compressions and strains. Furthermore, this approach enables the realization of atom-thin 1D or 2D nanomaterial-based piezoresistive sensors in a full-bridge configuration.

Claims

1. Intermediate product (1a') for producing a nanoelectronic component structure (1a - 1j), the intermediate product (1a') comprising a substrate (2), at least one cavity (3, 3a) formed in the substrate (2) and at least one nanostructure (6, 6a) which at least partially traverses the corresponding cavity (3, 3a), the cavity (3, 3a) being at least partially filled with a sacrificial material (8) which is selectively etchable or dissolvable relative to the material of the substrate (2) and the intermediate product (1a') either comprises at least one arm (5) on at least one side of the corresponding cavity (3, 3a) which partially traverses the at least one cavity (3, 3a) so that a gap (50) is formed above the at least one cavity (3, 3a), or comprises at least one arm (5) traversing the cavity (3, 3a) with a predetermined breaking point formed above the at least one cavity (3, 3a), the at least one nanostructure (6, 6a) being arranged on the at least one arm (5), respectively traversing the gap (50) or the predetermined breaking point, and being covered by one contact electrode (71, 72) respectively on both sides of the gap (50) or the predetermined breaking point.

2. Intermediate product according to claim 1, characterized in that at least one control electrode (4) is arranged or formed in at least one of the at least one cavity (3, 3a)3. Nanoelectronic component structure (1a - 1j) comprising a substrate (2), at least one cavity (3, 3a) formed in the substrate (2) and at least one nanostructure (6, 6a) which at least partially traverses the respective cavity (3, 3a), wherein the nanoelectronic component structure (1a - 1j) comprises at least one arm (5) which at least on one side of the corresponding cavity (3, 3a) partially traverses the at least one cavity (3, 3a) so that a gap (50) is formed over the at least one cavity (3, 3a), the at least one nanostructure (6, 6a) being arranged on the at least one arm (5) respectively traversing the gap (50) and being fixed between the at least one arm (5) and contact electrodes (71, 72) respectively formed on both sides of the gap (50), and wherein the at least one arm is bent or shrunk on its arm end (51, 52) projecting over or into the respective cavity (3, 3a), so that the at least one nanostructure (6, 6a) is tensioned.

4. Nanoelectronic component structure according to claim 3, characterized in that the at least one nanostructure (6, 6a) is mechanically tensioned between the contact electrodes (71, 72).

5. Nanoelectronic component structure according to one of claims 3 or 4, characterized in that at least one control electrode (4) is arranged in at least one of the at least one cavity (3, 3a).

6. Nanoelectronic component structure according to one of claims 3 to 5, characterized in that the substrate (2) comprises a plurality of the cavities (3, 3a) which each are traversed by at least one of the nanostructures (6, 6a), wherein at least two of the cavities (3, 3a) have different widths and / or depths and / or lengths and / or at least two of the nanostructures (6, 6a) have different widths and / or lengths and / or at least two of the nanostructures (6, 6a) are aligned and / or mechanically tensioned in different spatial directions.

7. Nanoelectronic component structure according to one of claims 3 to 6, characterized in that a shrunk filler material (90) is located at least in the at least one cavity (3, 3a), wherein at least one arm end (51, 52) of the respective arm (5) rests on the shrunk filler material (90) or the at least one arm end (51, 52) of the respective arm (5) is incorporated in the shrunk filler material (90).

8. Nanoelectronic component structure according to one of claims 3 to 7, characterized in that arm ends (51, 52) projecting into the at least one cavity (3, 3a) are fixed by a filler material (9) introduced into the corresponding cavity (3, 3a).

9. Nanoelectronic component structure according to one of claims 3 to 8, characterized in that at least one mass body is respectively arranged on the at least one nanostructure (6, 6a).

10. Method for producing a nanoelectronic component structure (1a - 1j), in which at least one cavity (3, 3a) is introduced into a substrate (2) and the respective cavity (3, 3a) is bridged by at least one nanostructure (6, 6a), wherein the at least one cavity (3, 3a) is at least partially filled with a sacrificial material (8), on the cavity (3, 3a) at least partially filled with the sacrificial material (8) either at least on one side of the corresponding cavity (3, 3a) at least one arm (5) is formed which only partially traverses the at least one cavity (3, 3a), so that a gap (50) is formed above the at least one cavity (3, 3a), or at least one arm (5) traversing the respective cavity (3, 3a) with a predetermined breaking point is formed above the at least one cavity (3, 3a), the at least one nanostructure (6, 6a) is formed or arranged on the at least one arm (5) so as to traverse the respective gap (50) or predetermined breaking point, a contact electrode (71, 72) is respectively formed on respective nanostructure ends (61, 62) of the respective nanostructure (6, 6a) formed on both sides of the corresponding cavity (3, 3a), subsequently the sacrificial material (8) is at least partially etched out or dissolved out of the corresponding cavity (3, 3a), and, if present, the predetermined breaking point is broken through.

11. Method according to claim 10, characterized in that at least one arm end (51, 52) of the at least one arm (5) is shrunk by means of tempering.

12. Method according to one of claims 10 to 11, characterized in that at least one control electrode (4) is arranged or formed in at least one of the at least one cavity (3, 3a) before said cavity is at least partially filled with the sacrificial material (8).

13. Method according to one of claims 10 to 12, characterized in that at least two of the cavities (3, 3a) are formed with different widths and / or depths and / or lengths and / or at least two of the nanostructures (6, 6a) are formed aligned to different spatial directions and / or are mechanically tensioned into different spatial directions respectively.

14. Method according to claim 10, characterized in that, after at least partially etching or dissolving the sacrificial material (8) out of the at least one cavity (3, 3a), at least one filler material (90) is introduced into the respective cavity (3, 3a) and said material is subsequently shrunk by tempering and / or curing.

15. Method according to one of claims 10 to 14, characterized in that at least one mass body is formed on the at least one nanostructure (6, 6a), which is formed from the at least one arm (5) when the sacrificial material (8) is at least partially etched or dissolved out of the at least one cavity (3, 3a).