BOLOMETER STRUCTURE FOR THE DETECTION OF ELECTROMAGNETIC RADIATION AND METHOD FOR THE MANUFACTURING OF SUCH A STRUCTURE

Description

TECHNICAL FIELD

[0001] The invention relates to the field of optoelectronics and the detection of electromagnetic radiation.

[0002] The invention thus more specifically relates to a structure for detecting electromagnetic radiation of the bolometer type and a method for manufacturing such a structure. STATE OF THE PRIOR ART

[0003] In order to detect electromagnetic radiation, particularly in the infrared wavelength range, it is known to use bolometer-type electromagnetic radiation detection structures.

[0004] Such a structure includes: an absorbing element configured to absorb electromagnetic radiation, generally provided in the form of a suspended membrane, a transducer having a characteristic which varies with temperature, the transducer being associated with the absorbing element to enable detection of the temperature rise of said absorbing element upon absorption of electromagnetic radiation.

[0005] Conventionally, the transducer is provided by a layer having thermistor properties, such as a layer of a metal oxide selected from the group comprising vanadium oxides VOx, nickel oxides NiOx, titanium oxides TiOx, or a layer of amorphous silicon aSi.

[0006] However, with such a transducer and with such a configuration, such structures cannot be integrated in the form of a matrix in a component having a grating pitch of less than 10 µm. Indeed, in order to preserve an acceptable sensitivity, the surface of the absorbing element must be sufficient due to the limited sensitivity of the metal oxide layers used as a transducer, the temperature coefficient not exceeding 2 to 2.5%.K -1< with such layers.

[0007] In order to provide bolometer-type detection structures with sensitivity compatible with integration into components with grating pitches of less than 10 µm, several avenues have been considered.

[0008] Among these, we can notably cite the possibility taught by the document US 7489024 which proposes to substitute the transducer by a MOS-FET type transistor operating in low inversion mode. Indeed, such a substitution makes it possible to achieve a temperature coefficient of up to 10%.K -1.< Nevertheless, the implementation proposed in the document US 7489024 presents, despite an optimized temperature coefficient, a significant number of drawbacks which makes this type of structure incompatible with integration in components having network pitches of less than 10 µm.

[0009] Indeed, by design, the structure described in document US 7489024 uses layers made of silicon dioxide as an absorbing element. These layers, by their function, must have a significant thickness. This therefore results in significant thermal inertia and therefore a degraded response time. In addition, these layers are also provided at the level of insulation arms which isolate the structure from the rest of the component it equips. Such promiscuity causes a loss to the rest of the component of part of the heat generated by the absorption of electromagnetic radiation.

[0010] For these reasons and in order to maintain acceptable sensitivity, the work of the inventors of the structure described in US 7489024, published in particular in the scientific journal "IEEE translation on Electron devices" volume 56 number 9 pages 1935 to 1942 in 2009, did not make it possible to obtain structures whose dimensioning is compatible with integration in the form of a matrix in a component having a network pitch of less than 10 µm. Indeed, the minimum surface area required for such a structure is 45 µm by 46 µm.

[0011] Further examples of the prior art are provided by documents US20150153236, EP2995916, WO2015059227, DE3001899, DE102014221609 and US20100244029. STATEMENT OF THE INVENTION

[0012] The invention aims to overcome this drawback and thus aims to provide a bolometer-type structure capable of being integrated in the form of a matrix in a component having a network pitch of less than 10 µm.

[0013] The invention relates to this purpose a bolometer type detection structure for detecting electromagnetic radiation as defined in claim 1. With an absorbing element in the form of a portion of the first metal grid electrode, the operation of the structure is optimized. Indeed, due to these inequalities, the first metal portion has an impedance close to that of vacuum which is of the order of 377 Ω, this for relatively small thicknesses of the order of 10 nm. The absorbing element therefore does not need to have a significant thickness to obtain an absorption greater than 85%. This significantly reduces the mass of the absorbing element required and its inertia compared to the prior art. Thus the structure has low inertia and optimized sensitivity compared to the structures of the prior art.This sensitivity is therefore particularly suitable for integration of the structure in the form of a matrix in a component with a network pitch of less than 10 µm.

[0014] Advantageously, the thickness of the first metal portion respects the following inequalities: 170 Ω ≤ ρ Ep ≤ 700 Ω .

[0015] In this way it is possible to obtain an absorption greater than 90%.

[0016] Ideally, the thickness of the first metal portion respects the following inequalities: 320 Ω ≤ ρ Ep ≤ 420 Ω ρ Ep can be substantially equal to 377 Ω, that is to say between 360 Ω and 380 Ω.

[0017] It can be noted that such a configuration can in particular be obtained with a metallic portion of titanium nitride TiN 10 nm thick.

[0018] It can be noted that with a third zone separating the first and second zones from each other, the third zone is interposed between the first and second zones.

[0019] By conductivity type in which the third zone is substantially empty of carriers, it should be understood above and in the remainder of this document that the third zone has a conductivity type and a thickness such that, in the absence of polarization of the detection structure, the third zone is substantially empty of carriers. Of course, in operation and when a polarization is applied to the gate electrode, the creation of the conduction channel makes it possible to populate the third zone with carriers of the first conductivity type. It may be noted that for those skilled in the art the indication that "the third zone is depleted" is synonymous with such a conductivity type in which the third zone is substantially empty of carriers.

[0020] By MOS-FET transistor, terminology generally used by those skilled in the art, is meant above and in the rest of this document, field effect transistor of the metal / oxide / semiconductor type. Indeed, the acronym MOS-FET has its origin in the English terminology “Metal-Oxide-Semiconductor Field Effect Transistor”.

[0021] The first metal portion of the first gate electrode may be made of a metal of the “mid-gap” type for the third zone, the first metal portion preferably being in a metal chosen from the group comprising titanium nitrides, tantalum nitrides and molybdenum silicides for a third zone made of silicon, the first metal portion advantageously being made of a titanium nitride for a third zone made of silicon.

[0022] The inventors discovered that with such an adaptation of the output work of the first metal portion with respect to the third, the transistor can operate with a relatively low inversion voltage since source-gate voltages between 50 mV and 75 mV are accessible while offering a high sensitivity of the transistor current to temperature. Thus, the Joule effect linked to the polarization of the structure remains contained and has little disturbance to the operation of the structure.

[0023] Above and in the rest of this document, the term "mid-gap metal" means that the metal is chosen so as to have, in the absence of polarization of the structure, its Fermi energy in the band gap region of the third zone and more precisely in the vicinity of the middle of the band gap of the third zone, typically at an energy level distant from the middle of the band gap in a range between -25% and +25% of the band gap. Such a gate configuration is generally known to those skilled in the art under the English term "mid-gap". Thus, in the case where the third zone is made of silicon, the "mid-gap metals" include in particular titanium nitrides, tantalum nitrides and molybdenum silicides.

[0024] The first gate electrode may be shorted to one of the first and second regions.

[0025] With such a configuration, enabled by the possibility of low inversion voltage operation for a metal portion of the first gate electrode is made of a "mid-gap" type metal, the structure requires only two conduction paths to be polarized. The electrical, and therefore thermal, conduction paths between the readout electronics and the transistor are reduced to a minimum. It is therefore possible to provide particularly optimized thermal insulation between the transistor and the readout electronics.

[0026] The first zone is surrounded by the third zone, the third zone being surrounded by the second zone.

[0027] With such a configuration, the first gate electrode has a high ratio of gate width to gate length, the width and length of the gate electrode being considered as is customary to express them in the formalism describing the operation of MOS-FETs, i.e. relative to the direction of current flow between the first and second zones of the transistor. Such a ratio makes it possible to increase the sensitivity of the transistor current to temperature. With such a configuration, such a ratio can also be obtained with a particularly large length of the gate electrode to optimize the signal-to-noise ratio of the structure since the noise is directly related to the surface of the gate electrode. It is thus noted that with such a configuration, it is possible to obtain a length of the first gate electrode greater than 0.5 µm.We also note that with such a configuration we limit the first zone of the transistor to a single portion and the second zone of the transistor to another single portion. The gate is therefore de facto imposing and the ring shape is the one which allows to optimize both its surface and the ratio of its width to its length in the space imposed by the pixel.

[0028] The transistor may also include: a fourth and fifth zone, the fourth zone being of the first conductivity type and the fifth zone being of a conductivity type selected from the group comprising a second conductivity type opposite to the first conductivity type and a conductivity type in which the third zone is substantially empty of carriers, a third gate electrode arranged to bias the fifth zone, in which the fifth zone separates the second and fourth zones from each other, and in which the third grid electrode comprises at least a second metal portion forming a second absorbent element, said second metal portion having a thickness Ep respecting the following inequality: 150 Ω ≤ ρEp≤700Ω with ρ the resistivity of the metallic material forming said second metallic portion.

[0029] A set formed by the third, second and fifth zones can separate the first and fourth zones from each other.

[0030] The fifth zone can surround the second zone, the fourth zone surrounding the fifth zone.

[0031] The first, third, second, fifth and fourth zones can follow one another in a first direction.

[0032] Thus, with such characteristics, the grid areas of the first and third grid electrodes adding up, the total grid area is particularly large. The signal-to-noise ratio can therefore be particularly optimized for such a structure.

[0033] It can be noted that with a fifth zone separating the second and fourth zones from each other, the third zone is interposed between the second and fourth zones.

[0034] The third region may be of the conductivity type in which the third region is substantially empty of carriers.

[0035] With such a third zone, parasitic effects related to a floating potential substrate, such as those related to the Kink effect, are contained or even absent. It is therefore not necessary to add a connection to bias the channel, i.e. the third zone. The thermal insulation of the transistor is therefore not degraded by such a channel bias connection.

[0036] A reflective surface may be provided configured to form a quarter-wave cavity with the first absorbing element.

[0037] In this way, the part of the electromagnetic radiation not absorbed by the first absorbing element is reflected by the reflecting surface towards the first absorbing element in order to be absorbed there. This phenomenon is further amplified due to the resonance created by the formation of the quarter-wave cavity.

[0038] The first gate electrode may be separated from the third region by a first and a second electrically insulating layer, one of the first and the second electrically insulating layer being made of silicon dioxide, the other of the first and the second electrically insulating layer being made of a high dielectric constant dielectric insulator.

[0039] In this way it is possible to provide a relatively low insulation thickness between the first gate electrode and the third zone while limiting the contribution of 1 / f noise during transistor operation.

[0040] It should be understood above and in the rest of this document, by "high dielectric constant dielectric insulator", or, according to the English term generally used by those skilled in the art, by "high-K" dielectric material, an insulating material whose dielectric constant is high compared to that of silicon dioxide which is equal to 3.9. Thus, a dielectric material may be considered as a high dielectric constant material if it has a dielectric constant greater than or equal to at least 1.5 times, or even 2 to 3 times, that of silicon dioxide.

[0041] The structure may further comprise a reading circuit configured to polarize the transistor and to determine, from an operating current of the transistor, a rise in temperature of the absorbing element, the reading circuit and the transistor being separated from each other by at least a first and a second insulation arm each comprising at least one conductive track for polarizing the transistor.

[0042] In this way, thermal contact between the transistor and the readout circuit is reduced to a minimum. The structure therefore has relatively low thermal inertia and its sensitivity is preserved.

[0043] Each of the conductive tracks of the first and second insulation arms may be a metal track forming a third absorbent element and has a thickness Ep respecting the following inequality: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metallic material forming said second metallic portion.

[0044] In this way, the part of the electromagnetic radiation not absorbed by the first absorbing element can be absorbed by the conductive tracks and partly contribute to the temperature increase of the transistor.

[0045] The transistor may further comprise a second gate electrode on a face of the transistor which is opposite the first gate electrode, the second gate electrode comprising at least one metallic portion and a fourth absorbing element.

[0046] Such a second gate electrode allows the threshold voltage of the transistor to be adjusted while increasing the surface area of ​​the absorbing element. The signal-to-noise ratio is therefore improved.

[0047] The invention also relates to a method of manufacturing a detection structure as defined in claim 11.

[0048] Such a method makes it possible to provide a structure according to the invention and therefore to benefit from the advantages linked thereto.

[0049] During the step of forming the first gate electrode, the first metal portion of the first gate electrode may be made of a metal of the “mid-gap” type for the third zone, the first metal portion preferably being in a metal chosen from the group comprising titanium nitrides, tantalum nitrides and molybdenum silicides for a third zone made of silicon, the first metal portion advantageously being made of a titanium nitride for a third zone made of silicon.

[0050] Thus the structure obtained with such a process benefits from the advantages linked to the use of a first metallic portion of the “mid-gap” type and therefore allows operation of the transistor at low inversion voltage.

[0051] In addition, steps may be planned for: forming a reading circuit configured to bias the transistor and to determine, from an operating current of the transistor, a rise in temperature of the absorbing element, forming a first and a second insulation arm, each of the first and second insulation arms comprising at least one conductive track, associating together the transistor, the first and second insulation arms and the reading circuit, such that the reading circuit is electrically connected to the transistor via the respective conductive tracks of the first and second insulation arms.

[0052] The structure thus manufactured has optimized isolation from the reading circuit, in particular through the use of the first and second isolation arms.

[0053] During the step of providing the reading circuit, a sub-step of forming a reflection surface may be provided,

[0054] During the step of associating together the transistor, the first and second isolation arms and the reading circuit, the reflection surface may have an arrangement so as to form with the titanium nitride portion of the first gate electrode a quarter-wave cavity.

[0055] Thus, the manufactured structure benefits from the advantages associated with such a reflective surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The present invention will be better understood by reading the description of exemplary embodiments, given for purely indicative and non-limiting purposes, with reference to the appended drawings in which: THE Figures 1A to 1C schematically illustrate a structure according to the invention with in Figure 1Aa top view showing in dotted lines the different elements making up the structure, in Figure 1B And 1C a sectional view of this same structure along axis BB and axis AA respectively, the Figure 2A and 2B schematically illustrate, during manufacture, the parts of the structure forming respectively a reading circuit and a reflector, with in Figure 2A a top and bottom view Figure 2B a sectional view along the CC axis, the Figures 3A and 3B schematically illustrate, during manufacture, the parts of the structure forming respectively an absorbent element and a transducer, with in Figure 3A a top and bottom view Figure 3B a sectional view along the DD axis, the Figures 4A and 4B schematically illustrate, during manufacture, the parts of the structure forming respectively insulating arms and the reflector, with in Figure 4A a top and bottom view Figure 4B a sectional view along the EE axis, the Figure 5 schematically illustrates the matrix organization of four structures according to the invention when they equip a component, the Figure 6 schematically illustrates in top view a structure according to a second embodiment in which the transducer comprises five zones.

[0057] Identical, similar or equivalent parts of different figures bear the same numerical references so as to facilitate the transition from one figure to another.

[0058] The different parts represented in the figures are not necessarily on a uniform scale, to make the figures more readable.

[0059] The different possibilities (variants and embodiments) must be understood as not being mutually exclusive and can be combined with each other. DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

[0060] There Figure 1Aschematically illustrates a bolometer-type detection structure 10 according to the invention, such a detection structure 10 being suitable for the detection of electromagnetic radiation.

[0061] Such a detection structure 10 is more particularly aimed at the detection of electromagnetic radiation in the infrared wavelength range. Thus, the different values ​​indicated in the embodiments described below relate to this practical application, in which the targeted wavelength range is the far infrared, i.e. between 8 and 12 µm. Of course, those skilled in the art are perfectly able, based on the present disclosure, to adapt these values ​​in order to allow, using such a detection structure 10, the optimized detection of electromagnetic radiation in a wavelength range other than that of the infrared.

[0062] Such a detection structure 10 comprises:a transistor 100 of the MOS-FET type comprising: o at least a first and at least a second zone 111, 112 of a first conductivity type, o at least a third zone 113 separating the first and second zones 111, 112 from each other, the third zone 113 being of a conductivity type in which the third zone is substantially empty of carriers, in other words the third zone 113 is totally depleted, o a first gate electrode 120 arranged to polarize the third zone 113, the first gate comprising a first absorption layer 210 of titanium nitride TiN forming the first absorbing element, o an optional second gate electrode 130 arranged on the face of the third zone which is opposite the first gate electrode 120 to polarize the third zone 113, a first and a second isolation arm 310, 320 respectively comprising a first and a second conduction track 311,321 to allow the polarization of the transistor 100, the first track 311 being connected to the second zone 112, the second track 321 being connected to the first and third zones 111, 113 by short-circuiting them, an optional reflection surface 330, 331 arranged so as to form with the first absorption layer a quarter-wave cavity, a reading circuit 340 of which only the substrate 341 is shown, the reading circuit 340 being electrically connected to the first and second conduction tracks 311, 321 by means of respectively a first, second, third and fourth bonding pad 354, 355, 316, 326. ,

[0063] It will be noted that in such a configuration, the first zone 111 forms the drain of the transistor, the second zone 112 forms the source of the transistor and the third zone 113 the channel of the transistor 100. Thus the transistor 100, in this first embodiment, operates in low insertion, the drain and the gate electrode being short-circuited and the source-drain voltages V SD and source-gate V SG being equal.

[0064] Such a detection structure 10 can be manufactured in four different steps, a first step in which the reading circuit 340 is provided, a second step in which the transistor 100 and its first gate electrode 120 forming the first absorbing element are provided, a third step in which the insulation arms 310, 320 in contact with the transistor 100 are formed and a fourth step in which the transistor 100 / insulation arm 310, 320 assembly is bonded to the reading circuit 340. During this fourth step, it is also possible to produce the second gate electrode 130.

[0065] THE Figures 2A and 2B thus illustrate the reading circuit 340 during manufacture during the step of supplying the reading circuit.

[0066] Thus, the reading circuit 340 is, as illustrated in the Figures 2A and 2B, arranged in a semiconductor support 341, such as a silicon substrate, in which the components of the reading circuit are arranged. The reading circuit 340 is configured to bias the transistor and to determine, from an operating current of the transistor 100, a temperature rise of the first gate electrode 120. Such a reading circuit 340 is only shown by means of dotted lines representing its location in the support 341. Such a reading circuit 340 is of a type known to those skilled in the art and can thus be a reading circuit dedicated to a single transistor 100, as well as a shared circuit for a group or for all the transistors equipping a component 1 (refer to the Figure 5) or a reading circuit composed of a part dedicated to a single transistor and a part shared for a group or for all the transistors equipping a component 1. Such reading circuits, generally of MOS technology, being known to those skilled in the art, they are not described more precisely in this document.

[0067] In order to ensure the connection between the reading circuit 340 and the transistor 100, the reading circuit 340 comprises, on a connection face of the semiconductor support 341, a first and a second connection pad 342, 343. The first and the second connection pad 342, 343 are made of a metallic material suitable for forming an ohmic contact with the reading circuit. Thus, such a metallic material can be, for example, made of copper. The first and the second connection pad 342, 343, in the context of a practical application of the invention, can have a surface area of ​​1 µm by 1 µm. It can also be noted that on the Figure 2A also shown are the first and second connection pads 342B, 343A of respectively a first and a second adjacent detection structure.

[0068] The connection face of the semiconductor support 341 is also provided, as illustrated in the Figure 2B, of a metal layer 344 to allow the formation of a first part 330 of the reflection surface 330, 331. Thus, the metal layer 344 extends over a major part of the surface of the detection structure 10. It will be noted that in the practical application of the invention, the surface occupied by the detection structure 10 can be a surface of 5 µm by 5 µm.

[0069] The connection face which is not coated by the first and second connection pads 342, 343 and by the metal layer 344 is covered with a first passivation layer 345. It may be noted that according to one possibility of the invention, such coverage of the connection face may be provided by a Damascene process. The first passivation layer 345 is made of a dielectric material such as silicon dioxide SIO 2 or silicon nitride Si 3 N 4 .

[0070] The first passivation layer 345, the first and second connection pads 342, 343 and the metal layer 344 are covered by a first stop layer 351. The first stop layer 351 is itself covered by a first sacrificial layer 352. The first sacrificial layer 352 and the first stop layer 351 are made of materials allowing selective etching, preferably chemical, of the first sacrificial layer 352, the first stop layer 351 therefore making it possible to stop the etching in order to protect in particular the first passivation layer 345. Thus, conventionally, the first sacrificial layer 352 can be made of silicon dioxide SiO 2 , the first stop layer 351 then being made of alumina Al 2 O 3 or aluminum nitride AIN, the selective etching then being obtained by a chemical attack with hydrofluoric acid, preferentially in vapor phase.

[0071] The first stop layer 351 and the first sacrificial layer 352 are both traversed, over their thickness and at the level of the first and second connection pads 342, 343 and the metal layer 344, by metal pillars 353 forming, for the first and second connection pads 342, 343, connection vias. The metallic material of the metal pillars 353 may be copper. In a practical application of the invention, the metal pillars 353 have a circular section whose diameter is substantially equal to 0.3 µm. Thus each of the first and second connection pads 342, 343 is in contact with four metal pillars.

[0072] The first sacrificial layer 352 also includes: a first and a second bonding pad 354, 355 associated respectively with the first and second connection pads 342, 343 by means of the metal pillars 353, the first part 330 of the reflection surface 330, 331 associated with the metal layer 344 by means of the metal pillars 353.

[0073] In this way, the first and second bonding pads 354, 355 are electrically connected to the first and second connection pads 342, 343 respectively, the first part 330 of the reflection surface 330, 331 being mechanically connected to the metal layer 344 by means of the metal pillars 353.

[0074] The first and second bonding pads 354, 355 and the reflective layer 330 are flush with the first sacrificial layer 352 on the face of the first sacrificial layer 352 which is opposite the first barrier layer 351.

[0075] In a practical application of the invention, the bonding pads may have, for example, a surface area of ​​1 µm by 1 µm.

[0076] Thus, the step of providing such a reading circuit comprises the following sub-steps: providing the substrate 341 in which the reading circuit 340 has been previously produced, forming the first passivation layer 345, forming the first and second connection pads 342, 343 and the metal layer 344, in the thickness of the passivation layer 345, depositing the first stop layer 351 in contact with the first and second connection pads 342, 343, the metal layer and the first passivation layer 345, depositing the first sacrificial layer 352 in contact with the first stop layer 351, providing through passages in the first stop layer 251 and in the first sacrificial layer 352, said through passages opening onto the first and second connection pads 342, 343 and the metal layer 344 to allow the formation of the metal pillars 353,providing surface openings in the first sacrificial layer 352 corresponding to the first and second bonding pads 354, 355 and to the first part 330 of the reflection surface 330, 331, depositing a metallic material in the through passages to form the metallic pillars 353, the first and second bonding pads 354, 355 and the first part 330 of the reflection surface 330, 331.,

[0077] It will be noted that it is possible to provide, in order to promote molecular bonding, a sub-step of planarization of the first sacrificial layer 352, of the first part 330 of the reflection surface 330, 331 and of the first and second bonding pads 354, 355.

[0078] THE Figures 3A and 3B illustrate the transistor 100 during manufacture during the step of supplying the transistor 100 and its first gate electrode 120 forming the first absorbing element. It can be noted that on the Figures 3A and 3Bthe transistor 100 comprises the second gate electrode 130 and a first portion of the second stop layer 141 covering the first, second and third zones 111, 112, 113 on their face which is opposite the first gate electrode 120. In a preferred variant of the invention, the second gate electrode 130 and the first portion of the second stop layer 141 covering the first, second and third zones 111, 112, 113 can nevertheless be formed subsequently during the step of bonding the transistor 100 / insulation arm 310, 320 assembly with reading circuit 340. It will be noted that the first and second zones 111, 112 and the first gate electrode 120 are covered, on the face by which they are connected to the first and second conduction tracks 321, by a second portion of the stop layer 141.

[0079] We can thus see on the Figure 3Awhich illustrates a front view of the transistor 100 according to the face by which the transistor 100 must be connected to the reading circuit 340. It can thus be seen that the first, second and third zones 111, 112, 113 of the transistor 100 are concentric, the first zone 111 is surrounded by the third zone 113, the third zone 113 being surrounded by the second zone 112. It can thus be seen on the Figure 3A that the first zone 111 occupies a central square area, the third zone 113 occupying a square area hollowed out of the first zone 111, the second zone occupying the remainder of the surface of the transistor 100.

[0080] The first, second, third zones 111, 112, 113 are all three formed in a semiconductor layer 110 made of silicon. The first and second zones 111, 112 have a first type of conductivity while the third zone 113 is a fully depleted zone. Such depletion of the third zone 113 can be obtained by means of a silicon on oxide substrate, or SOI for the English acronym for "silicon on insulator", the thickness of the silicon on insulator layer of which has been thinned by thermal oxidation and deoxidation to a thickness of between 15 and 50 nm, preferably between 25 and 50 nm, or even substantially equal to 50 nm.

[0081] Of course, if such total depletion of the third zone 113 is advantageous, it is also conceivable, without departing from the scope of the invention, that the third zone 113 is of a second type of conductivity opposite to the first type of conductivity.

[0082] The third area 113 is covered with the first gate electrode 120 and is separated from the latter by a first and a second electrically insulating layer 121, 122. In order to minimize the operating voltage of the transistor, the first insulating layer 121, in contact with the third area, is made of silicon dioxide SiOz while the second insulating layer 122, in contact with the first insulating layer 121, is made of a dielectric insulator with a high dielectric constant such as Hafnium oxide. It may be noted that in a practical application of the invention, the first insulating layer 121 may have a thickness of 9 nm, while the second insulating layer 122 made of hafnium oxide has a thickness of 3 nm.

[0083] The first gate electrode 120, in contact with the second insulating layer 122, may comprise the first absorption layer 210 and a first conductive layer 125. The first absorption layer 210 in contact with the second insulating layer 122 is made of titanium nitride TiN while the first conductive layer 125 in contact with the first absorption layer 210 is made of a material suitable for allowing an ohmic connection between the first gate electrode 120 and the second conduction track 321 of the second insulating arm 320. In a practical application of the invention, the first absorption layer 210 has a thickness of 10 nm, while the first conduction layer 125 is made of doped polycrystalline silicon Si and has a thickness of 70 nm.

[0084] With such a configuration, the first gate electrode 120 forms a so-called "mid-gap" gate electrode. Indeed, the use of a first absorption layer of titanium nitride TiN in contact with the gate insulating layers makes it possible to obtain a difference in output work between the silicon of the third zone and the metal of the gate electrode such that the threshold voltage of the transistor 100 is low. Thus, this configuration allows operation of the transistor with a gate / source voltage of between 2KT / q and 3KT / q (K being the Bolzmann constant, T the operating temperature of the transistor and q the elementary charge), i.e. between 50 and 75 mV at room temperature, i.e. at 300 K.Furthermore, in the case where the thickness of the first absorption layer 210 is substantially equal to 10 nm as is the case in the practical application of the invention, the resistance of the first absorption layer 210 is substantially adapted to that of the vacuum, i.e. 377 Ohm, which promotes the absorption of electromagnetic radiation by the first absorption layer 210.

[0085] Alternatively, other configurations of the gate electrode are conceivable within the scope of the invention. Thus, the first gate electrode 120 may comprise, instead of the first absorption layer of titanium nitride, a first metal portion forming a first absorbent element, said first metal portion having a thickness Ep respecting the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metallic material forming said metallic portion.

[0086] In order to provide absorption of electromagnetic radiation, this same first metallic portion can advantageously respect the following inequalities: 320 Ω ≤ ρ Ep ≤ 420 Ω

[0087] Even more advantageously ρ Ep can be substantially equal to 377 Ω, that is to say between 360 Ω and 380 Ω.

[0088] According to this variant, the metallic material of the first metallic portion may be a metal of the “mid-gap” type for the third zone 113, the first metallic portion preferably being in a metal chosen from the group comprising titanium nitrides, tantalum nitrides and molybdenum silicides for a third zone made of silicon. It may also be noted that according to a less advantageous possibility of the invention in which the metallic material of the first metallic portion is not a metal of the “mid-gap” type, the first metallic portion may be made of an alloy of aluminum and titanium.

[0089] As illustrated on the Figure 3B, the assembly formed by the first, second and third zones 111, 112, 113, the first and second insulating layers 121, 122, the first absorption layer 210 and the conduction layer 125 is surrounded by a second barrier layer 141. The second barrier layer 141 is itself coated, on its face which covers the first gate electrode 120 and the first and second zones 111, 112, with a second sacrificial layer 142. The second barrier layer 141 and the second sacrificial layer are both crossed by a first, a second and a third conductive via 145, 146, 147 opening respectively onto the first zone 111, the second zone 112 and the first gate electrode 120.In the same way as the first sacrificial layer 352 and the first stop layer 351, the second sacrificial layer 142 and the second stop layer 141 are made of materials allowing selective etching, preferably chemical, of the second sacrificial layer 142, the second stop layer 141 therefore making it possible to stop the etching. Thus, the second sacrificial layer 142 can be made of silicon dioxide SiO 2 , the second stop layer 141 then being made of alumina Al 2 O 3 or aluminum nitride AIN.

[0090] In order to provide optimized contact between each of the first, second and third via conductors 145, 146, 147 and the first and second areas 111, 112 and the first gate electrode 120, each of the first, second and third via conductors 145, 146, 147 comprises a contact portion made of titanium Ti with a thickness of 30 nm, an intermediate portion made of titanium nitride TiN with a thickness of 60 nm and a longitudinal portion made of tungsten W.

[0091] As illustrated on the Figure 3B, the second barrier layer 141 may also be coated, on its face opposite the second sacrificial layer 142, with the second gate electrode 130. According to this possibility, the second barrier layer 142 forms an electrical insulator which makes it possible to electrically isolate the second gate electrode from the first, second and third zones 111, 112, 113. As specified above, according to a preferred variant of the invention, the first portion of the second sacrificial layer 142 and the second gate electrode 130 may be formed during the fourth step. Thus, the first portion of the second sacrificial layer 142 and the second gate electrode 130 are described more precisely in connection with the fourth step.

[0092] Thus, the step of providing such a transistor comprises the following sub-steps: providing the SOI type substrate, not shown etching and thinning the substrate in order to provide a fully depleted silicon layer 110, depositing the first insulating layer 121, in contact with the silicon layer, depositing the second insulating layer 122, in contact with the first insulating layer 121, depositing the first absorption layer 210 in contact with the second insulating layer 122, depositing the conductive layer 125 in contact with the first absorption layer 210, selective etching of the conductive layer 125, the first absorption layer 210, the insulating layer 122 and the first insulating layer 121 so as to form the first gate electrode 120, implanting the silicon layer with doping elements of the first conductivity type in order to form the first and second zones, the first gate electrode making it possible to protect the third zone 113 during the implantation, depositing the second layer stop 141,depositing at least the second portion of the second sacrificial layer 142, opening a first, second and third passage in the second portion second stop layer 141 and in the second sacrificial layer 142 corresponding respectively to the first, second and third via, the first, second and third passages opening respectively into the first and second zone 111, 112 and the first gate electrode 120, successive deposition in the first, second and third passages of the first titanium contact portion Ti, of the intermediate titanium nitride portion TiN and of the longitudinal tungsten W portion.,

[0093] In the case where, according to a non-preferred variant of the invention, the first portion of the second barrier layer 141 and the third gate electrode are formed during this fourth step, the first portion of the sacrificial layer 142 is formed simultaneously with the second portion of the sacrificial layer 142 during the step of depositing at least the second portion of the second sacrificial layer 142 and the step of providing such a transistor further comprises the following sub-steps: opening of a through passage 131, illustrated on the Figure 1B , in the first portion of the second sacrificial layer 142, said through passage opening into the second zone 112, formation of the second gate electrode 130 in contact with the first portion of the second sacrificial layer 142, a conductive via then being formed in the through passage 131 between the second gate electrode 130 and the second zone 112.

[0094] THE Figures 4A and 4B illustrate the isolation arms 310, 320 being manufactured during the step of providing the isolation arms 310, 320. The first and second isolation arms 310, 320 are provided in contact with the second sacrificial layer 142.

[0095] Thus the first and second isolation arms 310, 320 each comprise: a first stiffening layer 312, 322 in contact with the second sacrificial layer 142, the corresponding conduction track 311, 321 in contact with the first stiffening layer 312, 322 on the face of the first stiffening layer 312, 322 which is opposite the second sacrificial layer 142, a second stiffening layer 313, 323 in contact with the corresponding conduction track 311, 321 on the face of the corresponding conduction track 311, 321 which is opposite the first stiffening layer 312, 322.

[0096] The first and second isolation arms 310, 320 are configured to thermally isolate the transistor 100 from the rest of the component 1. Thus, as illustrated in the Figure 4A , the first and second isolation arms 310, 320 have a maximum length for a minimum width and thickness. Thus, the first and second isolation arms 310, 320 are each in the form of a serpentine occupying half of the surface of the structure. Alternatively, other configurations of the first and second isolation arms 310, 320 are conceivable. For example, each of the first and second isolation arms 310, 320 may be in the form of nested meanders by abutting segments perpendicular to each other.

[0097] The first and second stiffening layers 312, 322, 313, 323 of the first and second insulation arms 310, 320 are made of a material resistant to selective attack by the first and second sacrificial layers 352, 142. Thus, in a practical application of the invention, the first and second stiffening layers 312, 322, 313, 323 of the first and second insulation arms 310, 320 may be made of amorphous silicon, alumina Al 2 O 3 or aluminum nitride AIN. The first and second stiffening layers 312, 322, 313, 323 of the first and second insulation arms 310, 320 may have a thickness ranging from 10 to 100 nm, preferably from 20 to 60 nm, or even be substantially equal to 20 nm, in order to ensure sufficient rigidity to support the transistor 100.

[0098] The first stiffening layer 312 of the first insulating arm 310 has, at the level of the second conductive via 146, a breakthrough in which a first conductor is arranged in order to bring the first conduction track 311 into electrical contact with the second conductive via 146. In the same way, the first stiffening layer 322 of the second insulating arm 320 has, at the level of the first and third conductive vias 145, 147, two breakthroughs in which a first and a second conductor are arranged in order to bring the second conduction track 321 into electrical contact with the first and third conductive vias 145, 147 respectively.

[0099] It may be noted that advantageously, the first and second conductors can be formed during the deposition of the first conduction track 311 by filling the corresponding breakthroughs with the metallic material forming the conductive track 311.

[0100] According to an advantageous possibility of the invention, the first and second conduction tracks 311, 321 can be made of titanium nitride TiN (typical thickness 10 nm). In this way, the first and second insulation arms 310, 320 form a third absorbent element to that formed by the first gate electrode 120. Alternatively, and in the same way as for the first gate electrode 120, the first and second conduction tracks 311, 321 can be made of a metal and have a thickness Ep respecting the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metallic material forming said conduction track 311, 321. In order to provide absorption of electromagnetic radiation, this same conduction track 311, 321 can advantageously respect the following inequalities: 320 Ω ≤ ρ Ep ≤ 420 Ω

[0101] Even more advantageously ρ Ep can be substantially equal to 377 Ω, that is to say between 360 Ω and 380 Ω.

[0102] The second stiffening layers 313, 323 of the first and second insulation arms 310, 320 comprise a first and a second spacing column 315, 325 in correspondence with the first and second bonding pads 354, 355 of the reading circuit 340 respectively and in electrical connection with the corresponding conduction track 311, 321. In a practical application of the invention, the first and second spacing columns 315, 325 may have, for example, a diameter of 0.7 µm.

[0103] The first and second spacer columns 315, 325 are extended by a third and fourth bonding pad 316, 326, respectively. The third and fourth bonding pads 316, 326 are sized to correspond to the first and second bonding pads 354, 355, respectively. Thus, each of the third and fourth bonding pads 316, 326 may have a surface area of ​​1 µm by 1 µm.

[0104] As illustrated on the Figure 4B, the first and second isolation arms 310, 320 and the first and second spacer columns are included in a third sacrificial layer 329 with the first and second spacer columns 315, 325 projecting from the stiffening layer 313, 323. The first and second spacer columns extend with the third and fourth bonding pads 316, 326 over the entire thickness of the third sacrificial layer 329. Thus, the third and fourth bonding pads 316, 326 are flush with the third sacrificial layer 329 on the face of the third sacrificial layer 329 which is opposite the first and second isolation arms 310, 320.

[0105] The third sacrificial layer 329 and the spacer columns 315, 325 are dimensioned such that the reflection surface 330, 331 forms a quarter-wave cavity with the first absorption layer 210.

[0106] A second portion 331 of the reflection surface 330, 331 is also included in the third sacrificial layer 329 by being flush with the latter in correspondence with the first portion 330 of the reflection surface 330, 331.

[0107] The third sacrificial layer 329, in order to allow its selective etching during the etching of the first and second sacrificial layers 352, 142 and a molecular bonding between the assembly formed by the third sacrificial layer 329, the second part 331 of the reflection surface 330, 331 and the third and fourth connection pads 316, 326, and the assembly formed by the first sacrificial layer 352, the first part of the reflection surface 330, 331 and the bonding pads 354, 355.

[0108] Thus, the step of supplying the insulation arms includes the following sub-steps: depositing a first full plate stiffening layer in contact with the second sacrificial layer 142 on the face of the second sacrificial layer 142 which is opposite the second stop layer, delimiting in the first full plate stiffening layer the breakthroughs intended to form the breakthroughs of the first stiffening layers 312, 322 of the first and second insulating arms 310, 320, depositing in the breakthroughs the first, second and third conductors, depositing a full plate conductive layer in contact with the first full plate stiffening layer on a face of the first stiffening layer which is opposite the second sacrificial layer 142, depositing a second full plate stiffening layer in contact with the full plate conductive layer on a face of the full plate conductive layer which is opposite the first full plate stiffening layer,selective etching of the first full-plate stiffening layer, the full-plate conductive layer and the second full-plate stiffening layer so as to form the first and second insulation arms, depositing the third sacrificial layer 329 so that the first and second insulation arms 310, 320 are included in the third sacrificial layer, providing a first and a second opening in the third sacrificial layer and in respectively second stiffening layers 313, 323 of the first and second insulation arms 310, 320 in order to allow the formation of the spacer columns 315, 325 and third and fourth bonding pads 316, 326, providing a third opening in the third sacrificial layer in order to allow the formation of a second portion 331 of the reflection surface 330, 331, metal deposition in the first,second and third openings of the third sacrificial layer and in the first and second openings of each of the second stiffening layers 313, 323 in order to form the first and second spacer columns, the third and fourth bonding pads and the second portion 331 of the reflection surface 330, 331, the third sacrificial layer 329, the second portion 331 of the reflection surface 330, 331 and the bonding pads 315, 325 being able to be subjected to a planarization sub-step in order to promote molecular bonding,

[0109] The fourth step of bonding the transistor 100 / isolation arm 310, 320 assembly with the reading circuit 340 makes it possible to form the detection structure 10 according to the invention. During this step, the assembly formed by the third sacrificial layer 329, the second part 331 of the reflection surface 330, 331, and the third and fourth bonding pads 316, 326 is molecularly bonded to the assembly formed by the first sacrificial layer 352, the first part 330 of the reflection surface 330, 331, and the bonding pads 354, 355 with the first bonding pad 354 connected to the third bonding pad 316 and the second bonding pad 355 connected to the fourth bonding pad 326.

[0110] Once the molecular bonding has been carried out and within the framework of the preferred variant of the invention in which the second gate electrode has not been produced during the second step, additional sub-steps are provided to form the first portion of the sacrificial layer 142 and the second gate electrode 130.

[0111] According to this variant, the first portion of the sacrificial layer 142 is made of the same material as that of the second portion of the sacrificial layer 142 formed during the second step. Thus, the first portion of the sacrificial layer 142 can be made of alumina Al 2 O 3 or aluminum nitride AIN. The first portion of the sacrificial layer 142 thus forms an electrical insulator for electrically insulating the second gate electrode from the first, second and third zones 111, 112.

[0112] The second gate electrode 130 is advantageously made of titanium nitride TiN with a thickness substantially equal to 10 nm. According to this possibility, the second gate 130 forms a fourth absorbing element to that formed by the first gate electrode 120. In the same way as for the first absorption layer 210, the second gate electrode 130 can also be made of a metal and have a thickness Ep respecting the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metallic material forming said conduction track 311, 321. In order to provide absorption of electromagnetic radiation, this same conduction track 311, 321 can advantageously respect the following inequalities: 320 Ω ≤ ρ Ep ≤ 420 Ω

[0113] Even more advantageously ρ Ep can be substantially equal to 377 Ω, that is to say between 360 Ω and 380 Ω.

[0114] Similarly, in the case where the second gate electrode 130 does not provide any function of absorbing electromagnetic radiation, the second gate 130 may be made of another material without departing from the scope of the invention. Thus, it is, for example, conceivable that such a second gate electrode 130 is made of polycrystalline silicon Si. It is also conceivable that the second gate electrode 130 is formed of two conductive layers, one of which may optionally be made of titanium nitride TiN.

[0115] Thus, according to this variant of the invention, the fourth step further comprises the following steps: forming the first portion second barrier layer 142 in contact with the first, second and third zones 111, 112, 113 on the face of the latter which is opposite the first gate electrode 120, opening a through passage 131, illustrated in the Figure 1B, in the first portion of the second sacrificial layer 142, said through passage opening into the second zone 112, formation of the second gate electrode 130 in contact with the first portion of the second sacrificial layer 142, a conductive via then being formed in the through passage 131 between the second gate electrode 130 and the second zone 112.

[0116] Whether in the preferred variant described above or in the variant in which the second gate electrode 120 is provided in the second step, the fourth step further comprises the following sub-step of selective etching of the first, second and third sacrificial layers 352, 142, 329, for example by acid etching, the remainder of the detection structure 10 being protected by the first and second barrier layers 351, 141.

[0117] In this way, the transistor 100 is thermally isolated from the rest of the detection structure 10 by the first and second isolation arms 310, 320.

[0118] It will be noted that this last step, with that of etching and thinning the substrate, allows, in the case where the detection structure 10 equips a component comprising a plurality of detection structures 10A, 10B, 10C, 10D, to thermally isolate the detection structure 10 from the corresponding reading circuit and from the detection structures 10A, 10B, 10C, 10D which are directly adjacent to it.

[0119] So, the Figure 5 illustrates an example of integration of a detection structure 10 according to the invention in such a component 1 comprising a plurality of detection structures 10A, 10B, 10C, 10D organized in the form of a square matrix. It can thus be seen on the Figure 5that the arrangement of the bonding pads 342, 343 in an offset manner makes it possible to optimize the surface occupied by each of the structures 10A, 10B, 10C, 10D, the first connection pad 342A, 342B, 342C, 342D being adjacent to the second connection pad 343A, 343B, 343C, 343D of the structure 10A, 10B, 10C, 10D which is directly adjacent to it on the left, the second connection pad 343A, 343B, 343C, 343D being adjacent to the first connection pad 342A, 342B, 342C, 342D of the detection structure 10A, 10B, 10C, 10D which is directly adjacent to it on the right. With such a configuration, the receiving surface, i.e. the surface of the first grid 120, occupies an optimized surface. Such a configuration allows for components having a pitch between two structures 10A, 10B, 10C, 10D of the order of 5 µm.

[0120] There Figure 6illustrates the arrangement of the gate electrode of a detection structure 10 according to a second embodiment of the invention in which the surface of absorption elements is optimized. Such a detection structure 10 differs from a detection structure 10 according to the first embodiment in that the transistor comprises a first, second, third, fourth and fifth zone 111, 112, 113, 114, 115 and a first and third gate electrode 120, 140.

[0121] The first, second and third zones 111, 112, 113 and the first gate electrode 120 have a configuration identical to that described in the first embodiment, with the difference that the second zone 112 acts as a drain and it is therefore, as a result, it which is short-circuited with the first gate electrode 120. Thus, the second conduction track 321 makes it possible to polarize the second zone 112 and the first gate electrode 120, the first conduction track 311 making it possible to polarize the first zone 111.

[0122] The fourth zone 114 is a zone of the first conductivity type, with a configuration similar to that of the first and second zones 111, 112. Similar to the third zone 113, the fifth zone 115 may be a fully depleted zone. The fifth zone 115 surrounds the second zone 112 and the fourth zone 114 surrounds the fifth zone.

[0123] The third gate electrode 140 has a configuration substantially identical to that of the first gate electrode and thus comprises, in the same way as the first gate electrode, a second absorption layer 220

[0124] The second conduction track 321 is configured so as to, as illustrated in the Figure 6 , short-circuiting the first gate electrode 120 with the third gate electrode 140 and with the second area 112. The first conduction track 311 is configured so as to, as illustrated in the Figure 6 , short-circuit the first area 111 with the fourth area 114. In this way, the structure has two transistors in parallel with each other and has an increased gate electrode area and an optimized gate width to gate length ratio.

[0125] Of course, if in the first and second embodiments described above, the first gate electrode 120 is short-circuited with one of the first and second zones 111, 112, it is also conceivable, without departing from the scope of the invention, that the first, second zones and the first gate electrode are polarized independently of each other. In such a configuration, it is then necessary to provide a third conductive track provided either in one of the first and second insulation arms, or in a third insulation arm.Similarly, in the case where a second gate electrode 130 is provided on the face of the first, second and third zones 111, 112, 113 opposite the first face if the latter can be polarized by means of an electrical connection to the second zone 112, it is also conceivable, without departing from the scope of the invention, that the second gate electrode 130 is polarized otherwise. In such a configuration, it is necessary to provide a third conductive track provided either in one of the first and second insulation arms, or in a third insulation arm.

[0126] It may also be noted that if in the embodiments described above, a second gate electrode 130 is provided, such a second gate 130 is not necessary for the proper functioning of the invention. Thus, it is perfectly conceivable to adjust the threshold voltage of the transistor by means of charges trapped in one of the first and second electrically insulating layers or to provide independent polarization of the first gate electrode 120.

[0127] Similarly, if in the first and second embodiments a reflection surface 330, 331 is provided, it is also conceivable, without departing from the scope of the invention, that the detection structure 10 is devoid of it.

[0128] It may also be noted that the shape of the zones and / or the gate electrodes described in the context of the first and second embodiments is given only as an example and is in no way limiting. Thus, it is also perfectly conceivable in the context of the invention to have a structure similar to that of the first embodiment, except that the first, second and third zones follow one another along a first direction. In the same way, it is also conceivable to have a structure similar to that of the second embodiment, except that the first, second and third, fourth and fifth zones follow one another along a first direction.

Claims

1. A bolometer-type detection structure (10) for detecting an electromagnetic radiation, the detection structure (10) including: - at least one first absorbent element (210) configured to absorb the electromagnetic radiation, - a MOSFET-type transistor (100) associated with the first absorbent element to detect the rise in the temperature of said absorbent element upon absorption of the electromagnetic radiation, the transistor including: ∘ at least one first and at least one second areas (111, 112) of a first conductivity type, ∘ at least one third area (113) separating the first and second areas (111, 112) from one another, the third area (113) being of a conductivity type selected from among a group including a second conductivity type opposite to the first conductivity type and a conductivity type in which the third area (113) is substantially free of carriers, ∘ at least one first gate electrode (120) arranged to bias the at least one third area (113), the detection structure (10) being characterised in that the first gate electrode (120) includes at least one first metal portion (210) forming the first absorbent element, said first metal portion having a thickness Ep complying with the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metal material forming said metal portion, and wherein the first area (111) is surrounded by the third area (113), the third area (113) being surrounded by the second area (112).

2. The detection structure (10) according to claim 1 wherein the first metal portion of the first gate electrode is made in a metal of the "mid-gap" type for the third area, the first metal portion being preferably made in a metal selected from among the group including titanium nitrides, tantalum nitrides and molybdenum silicides for a third area (113) made of silicon, the first metal portion being advantageously made in a titanium nitride for a third area (113) made of silicon.

3. The detection structure (10) according to claim 2 wherein the first gate electrode (120) is in short-circuit with one amongst the first and second areas (111, 112).

4. The detection structure (10) according to any one of claims 1 to 3, wherein the transistor (100) further includes: - fourth and fifth areas (114, 115), the fourth area (114) being of the first conductivity type and the fifth area (115) being of the second conductivity type selected from among the group including a second conductivity type opposite to the first conductivity type and a conductivity type in which the fifth area is substantially free of carriers, - a third gate electrode (140) arranged to bias the fifth area (115), wherein the fifth area (115) separates the second and fourth areas (112, 114) from one another, an assembly formed by the third, second and fifth areas (113, 112, 115) separating the first and fourth areas (111, 114) from one another, and wherein the third gate electrode (140) includes at least one second metal portion forming a second absorbent element, said second metal portion having a thickness Ep complying with the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metal material forming said second metal portion, wherein the first gate electrode (120) and the third gate electrode (140) and the second area (112) are in short-circuit, and wherein the first area 111 and the fourth area 114 are in short-circuit.

5. The detection structure (10) according to claims 1 and 4, wherein the fifth area (115) surrounds the second area (112) and wherein the fourth area (114) surrounds the fifth area (115).

6. The detection structure (10) according to any one of claims 1 to 5, wherein the at least one third area (113) is of the conductivity type in which the third area (113) is substantially free of carriers.

7. The detection structure (10) according to any one of claims 1 to 6, wherein a reflective surface (330, 331) is provided configured to form a quarter-wave cavity with the first absorbent element.

8. The detection structure (10) according to any one of claims 1 to 7 further including a reading circuit (340) configured to bias the transistor (100) and to determine, from an operating current of the transistor (100), a rise in the temperature of the absorbent element, wherein the reading circuit (340) and the transistor (100) are separated from one another by at least one first and one second insulating arm (310, 320) each including at least one conductive track (311, 321) for biasing the transistor (100).

9. The detection structure (10) according to claim 8, wherein each of the conductive tracks (311, 321) of the first and second insulating arms (310, 320) is a metal track forming a third absorbent element and has a thickness Ep complying with the following inequalities: 150 Ω ≤ ρ Ep ≤ 700Ω with ρ the resistivity of the metal material forming said second metal portion.

10. The detection structure (10) according to any one of claims 1 to 9, wherein the transistor further includes a second gate electrode (130) on a face of the transistor that is opposite to the first gate electrode (120), and wherein the second gate electrode (130) includes at least one metal portion forming a fourth absorbent element.

11. A method for manufacturing a detection structure (10) including the following steps: - providing at least one first, one second and one third areas (111, 112, 113), the first and second areas (111, 112) being of a first conductivity type, the third area (113) separating the first area and second areas (111, 112) from one another, and the third area (113) being of a conductivity type selected from among a group including a second conductivity type opposite to the first conductivity type and a conductivity type in which the third area is substantially free of carriers, the first area (111) being surrounded by the third area (113), the third area (113) being surrounded by the second area (112), - forming a first gate electrode (120) arranged to bias the third area (113) so as to form a MOSFET-type transistor (100), the first gate electrode (100) including at least one first metal portion forming an absorbent element configured to absorb the electromagnetic radiation, in this manner the transistor (100) is associated with the absorbent element to detect the rise in temperature of said absorbent element upon absorption of the electromagnetic radiation, said first metal portion having a thickness Ep complying with the following inequalities: 150 Ω ≤ ρ Ep ≤ 700 Ω with ρ the resistivity of the metal material forming said metal portion.

12. The manufacturing method according to claim 11, wherein, during the step of forming the first gate electrode (120), the first metal portion of the first gate electrode (120) is made in a metal of the "mid-gap" type for the third area, the first metal portion being preferably made in a metal selected from among the group including titanium nitrides, tantalum nitrides and molybdenum silicides for a third area (113) made of silicon, the first metal portion being advantageously made in a titanium nitride for a third area (113) made of silicon.

13. The manufacturing method according to claim 11 or 12 wherein the following steps are also provided for: - forming a reading circuit (340) configured to bias the transistor (100) and to determine, from an operating current of the transistor (100), a rise in the temperature of the absorbent element, - forming first and second insulating arms (310, 320), each of the first and second insulating arms including at least one conductive track (311, 321), - associating together the transistor (100), the first and second insulating arms (310, 320) and the reading circuit, such that the reading circuit (340) is electrically connected to the transistor (100) via the respective conductive tracks (311, 321) of the first and second insulating arms (310, 320).

14. The manufacturing method according to claim 13 wherein during the step of forming the reading circuit (340), a sub-step of forming a reflective surface (330, 331) is provided for, and wherein during the step of associating together the transistor (100), the first and second insulating arms (310, 320) and the reading circuit (340), the reflective surface (330, 331) has an arrangement so as to form a quarter-wave cavity with the portion made of titanium nitride of the first gate electrode (120).