Optoelectronic device and method for processing the same

Abstract

The invention concerns an optoelectronic device, comprising a mesa structured semiconductor layer stack having at least one of an n-doped layer and a p-doped layer and an active region arranged on the respective one of the n-doped layer and the p-doped layer. A regrown conductive barrier layer covers the boundaries of the active region with a larger bandgap material. Respective contact layers are electrically coupled to at least the one of the n-doped layer and the p-doped layer, respectively, wherein one of the contact layers is in electric contact with the regrown conductive barrier layer covering the structured boundaries of the active region. A portion of the regrown conductive barrier layer extends substantially parallel to the one of the n-doped and p-doped layer thereby surrounding the active layer. A structured first current blocking layer is arranged between said portion of the regrown conductive barrier layer and the one of the n- doped and p-doped layer, said first current blocking layer comprising an opening filled with conductive material.

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