ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND ASSOCIATED INITIALIZATION METHOD

A breakdown layer in the resistive memory and selector device assembly addresses electrical isolation issues by ensuring the selector device is in a high resistive state post-manufacturing, enabling reliable operation and high integration density.

FR3104812B1Active Publication Date: 2025-06-20COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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Patent Information

Application Number
FR2019014468
Authority / Receiving Office
FR · FR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2019-12-16
Publication Date
2025-06-20
Estimated Expiration
2039-12-16

AI Technical Summary

Technical Problem

Existing resistive memory and selector device assemblies face issues with electrical isolation problems due to the selector device being in a conductive state at the end of manufacturing, failing to isolate the memory effectively.

Method used

Incorporating a breakdown layer of dielectric material that breaks down at a predetermined voltage, ensuring electrical insulation of the memory regardless of its resistive state, and initializing the selector device to its high resistive state through a controlled voltage pulse.

Benefits of technology

Ensures effective electrical isolation of the memory and proper functioning of the selector device, maintaining high integration density and operational reliability.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND ASSOCIATED INITIALIZATION METHOD One aspect of the invention relates to an elementary cell (100) comprising a breakdown layer (103) made of dielectric having a thickness depending on a breakdown voltage, a device and a non-volatile resistive memory (102) connected in series, the device (101) comprising: an upper selector electrode (1013), a lower selector electrode (1011), a layer made of a first active material, called the active selector layer (1012), said device (101) being intended to form a volatile selector; said memory (102) comprising: an upper memory electrode (1015), a lower memory electrode (1013), a layer made of at least one second active material, called the active memory layer (1014). Figure to be published with the abstract: Figure 3
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