BSI pixel charge overflow detection device

Abstract

An image sensor equipped with a pixel (Pi) comprising: - a photosensitive area (12) formed in a semiconductor substrate (10) and surrounded by a peripheral insulating trench (16); - a detection node (SN) formed on a charge-collecting area; - a charge transfer gate (TG) around the detection node; - a housing (14), the pixel (Pi) being equipped with a transistor (M1) called a "detection acceleration" transistor, configured so that, during an operation called "charge overflow detection," it is made conductive in order to weaken a potential barrier generated by the transfer gate and thus promote an overflow of photogenerated charges towards the detection node (SN) of the photosensitive area and accelerate the detection of this overflow. Figure for the abstract: 1.

Description

Title of the invention: Charge overflow detection device for BSI pixel Technical field

[0001] The present application relates to the field of image sensors, in particular that of sensors equipped with pixels illuminated from the rear face, and more precisely those with clamped photodiodes and provided with a charge transfer grid structure. STATE OF THE PRIOR ART

[0002] An image sensor typically comprises a plurality of pixels, each provided with a photosensitive area formed in a substrate.

[0003] In a backside illumination (BSI) image sensor, there is a photoconversion or integration phase during which the backside of the substrate is illuminated and electron-hole pairs are generated and carriers, either photogenerated electrons or photogenerated holes, accumulate in the photosensitive area.

[0004] An example of a pixel with backside illumination is presented for example in document US 2018 / 061875A1.

[0005] In this example, the substrate is placed in a depletion regime comparable to a pinched photodiode. The pinching is achieved by the polarized capacitive deep trench isolation (CDTI) inversion layer.

[0006] During a reading phase, a charge transfer device is controlled to transfer the photo-generated charges which have accumulated in the photosensitive zone to a doped semiconductor charge collection zone connected to a detection node (“Sense Node” according to English terminology).

[0007] In sensors comprising pixels intended to receive illumination from the rear face of the substrate, for each pixel, the charge collection zone and the detection node are arranged at the front face of the substrate.

[0008] A vertical transfer grid may be provided to control the transfer of charges contained in the photosensitive area to the collection area and the reading node. This grid is typically arranged around the collection area.

[0009] Applying an adequate potential to the transfer grid makes it possible to form a potential barrier in a region located inside the vertical transfer grid, between the photosensitive zone and the collection zone. The presence of this potential barrier makes it possible, during an exposure phase, to block a transfer of photo-generated carriers from the photosensitive area to the collection area. This potential barrier results from the presence, along the side walls of a trench in which the transfer gate is formed, of an inversion layer attracting carriers of the opposite type to the substrate.

[0010] When illuminated, the diode fills with charges. If the internal potential of the diode, which changes according to the quantity of charges accumulated, is higher than the potential of the barrier of a portion delimited and surrounded by the transfer grid(s), charges will move towards the detection node.

[0011] There is a need to be able to detect this phenomenon, which is called “overflow” of charges, and in particular to be able to detect it quickly. Presentation of the invention

[0012] According to one aspect, the invention relates to an image sensor comprising one or more pixels, each pixel comprising:

[0013] - a photosensitive area formed in a semiconductor substrate;

[0014] - a peripheral isolation trench extending vertically in the substrate semiconductor and laterally delimiting the photosensitive zone;

[0015] - a detection node comprising a photo-generated charge collection zone arranged at an upper face of the substrate, the charge collection zone being doped and having a first type of conductivity, in particular of type P;

[0016] - a charge transfer grid extending vertically in the semi- driver around the charge collection area;

[0017] - a box inserted between the peripheral insulation trench and the transfer grid vertical, and arranged around the detection node, the box being doped and having a second type of conductivity, opposite to the first type of conductivity, in particular of type N, the photosensitive zone being formed of a first doped region which is of the first type of conductivity, in particular of type P, and which extends under the charge collection zone and under the box and forms a diode with the box,

[0018] the sensor being provided with a charge overflow detection circuit configured to, during a “charge overflow detection” operation during which a polarization of the transfer gate is applied so as to form a potential barrier then maintained and following an illumination of the photosensitive zone during the operation causing a transfer of photo-generated charges from the photosensitive zone to the detection node and a variation in potential at this detection node, detect this variation in potential.

[0019] According to one embodiment, the invention relates to an image sensor comprising one or more pixels, each pixel comprising:

[0020] - a photosensitive area formed in a semiconductor substrate;

[0021] - a peripheral isolation trench extending vertically in the substrate semiconductor and laterally delimiting the photosensitive zone;

[0022] - a detection node comprising a photo-generated charge collection zone arranged at an upper face of the substrate, the charge collection zone being doped and having a first type of conductivity, in particular of type P;

[0023] - a charge transfer grid extending vertically in the semi- driver around the charge collection area;

[0024] - a box inserted between the peripheral insulation trench and the transfer grid vertical, and arranged around the detection node, the box being doped and having a second type of conductivity, opposite to the first type of conductivity, in particular of type N, the photosensitive zone being formed of a first doped region which is of the first type of conductivity, in particular of type P, and which extends under the charge collection zone and under the box and forms a diode with the box,

[0025] the sensor being provided with at least one pixel integrating a “detection acceleration” transistor, this transistor having a gate arranged on the upper face of the substrate and which is connected to the detection node.

[0026] The “detection acceleration” transistor can be configured to, during a “charge overflow detection” operation during which a potential barrier is maintained by biasing the transfer gate and following illumination of the photosensitive area during the operation resulting in a transfer of photo-generated charges from the photosensitive area to the detection node and a variation in potential at this detection node, be turned on, the “detection acceleration” transistor turned on weakening the potential barrier and promoting a transfer of photo-generated charges to the detection node of the photosensitive area.

[0027] The transistor makes it possible to detect an overflow as quickly as possible while limiting the size of the pixel.

[0028] The pixel integrating the aforementioned transistor makes it possible to accelerate and amplify the detection of the overflow by causing a runaway at the diode level. This makes it possible to relax the constraints in terms of gain of a detection stage connected to the detection node.

[0029] In addition to this detection stage, a conventional reading circuit can also be associated with the pixel for reading the residual charges.

[0030] The "sense acceleration" transistor may be an N-type transistor, particularly when the first region and the collection area are P-doped regions.

[0031] Advantageously, the “detection acceleration” transistor comprises a channel region formed in a doped part of the substrate having the first type of conductivity, in particular P type.

[0032] According to one possible implementation, the channel region of the transistor "detection acceleration" extends at an upper face of the semiconductor substrate between an area of ​​the well forming a source region of the "detection acceleration" transistor, and another area having the second type of conductivity, and forming a drain region of the "detection acceleration" transistor.

[0033] According to one possible embodiment, the other zone forming the drain region of the transistor has the second type of conductivity and has doping, in particular of the N+ type, greater than the doping of said zone of said well.

[0034] Advantageously, an insulation block is arranged between the peripheral insulation trench and the other zone having the second type of conductivity and forming the drain region of the transistor.

[0035] According to one possible implementation, the sensor may be provided with a control circuit configured to, during the charge overflow detection operation, apply a potential to the transfer gate during said charge overflow detection operation.

[0036] According to one possible implementation, the control circuit is configured to, during the charge overflow detection operation:

[0037] according to a first phase apply to the gate of the “detection acceleration” transistor, a first initialization potential so as to keep the transistor blocked then,

[0038] according to a second phase, put in high impedance, the detection node and the gate of the “detection acceleration” transistor.

[0039] The control circuit may be further configured to,

[0040] during the first phase: apply to a source region of the transistor "detection acceleration" a second initialization potential preferably lower than a given potential applied to a drain region of the transistor "detection acceleration" then,

[0041] during said second phase: place in high impedance the zone of the box forming the source region of the “detection acceleration” transistor while maintaining the given potential on the other zone forming the drain region.

[0042] The control circuit can be configured to, following the variation in potential on the detection node, reset the detection node to the first initialization potential and the area of ​​said box to the second initialization potential.

[0043] According to one possible implementation, the control circuit can be provided with:

[0044] - a first floor, in particular provided with at least one door performing a function “NOR” logic, comprising a first input intended to receive a detection operation start trigger signal and a second input coupled to the detection node and to the “detection acceleration” transistor gate,

[0045] - a first coupling switch controlled by the output signal of the first stage and which is intended, when it is made passing, to couple the detection node to a first initialization potential and when it is made blocking to put the detection node in high impedance,

[0046] - a second coupling switch controlled by an output signal from the first stage and which is designed to, when it is made passing, couple the box to a second initialization potential and when it is made blocked to put the box in high impedance.

[0047] The “detection acceleration” transistor may belong to a charge overflow indicator circuit formed of an indicator stage, in particular provided with a comparator or a logic gate, such as a logic gate performing a “YES” function or a “NO” function, configured to, following the variation of the potential on the detection node, produce an overflow indicator signal.

[0048] Advantageously, the overflow indicator circuit can be associated with a counter configured to increment upon each reception of said overflow indicator signal.

[0049] According to a particular implementation of the sensor, the pixels are arranged in a given level Ni of a device comprising several superimposed levels of components and in which the control circuit is arranged in another level N2 of the device, distinct from said given level, said given level and said other level being superimposed.

[0050] According to another aspect, the present invention relates to a time-of-flight image capture device comprising an image sensor as defined above.

[0051] According to another aspect, the present invention relates to an image capture device based on event detection comprising an image sensor as defined above. Brief description of the drawings

[0052] The present invention will be better understood on the basis of the description which follows and the appended drawings in which:

[0053] [Fig-1] is a schematic and partial sectional view of an image sensor pixel associated with a transistor making it possible to accelerate detection of a charge overflow towards the detection node;

[0054] [Fig.2] is a schematic and partial top view of another arrangement of the image sensor pixel associated with the charge overflow detection acceleration transistor;

[0055] [Fig.3] is a schematic and partial perspective view of another arrangement of the image sensor pixel associated with the charge overflow detection acceleration transistor;

[0056] [Fig.4] gives curves of evolution of the potential within a pixel before and after exhibition of the latter;

[0057] [Fig.5] gives curves of signal and potential evolution within a pixel during a charge overflow detection operation;

[0058] [Fig.6] is used to illustrate a pixel bias control circuit during a charge overflow detection operation as well as an overflow detection stage;

[0059] [Fig.7] is a timing diagram of different signals that can be implemented in the pixel control circuit during a charge overflow detection operation;

[0060] [Fig.8] serves to illustrate a particular example of embodiment of the sensor on several superimposed levels of active components, the pixel and its control circuit being arranged on separate levels;

[0061] Identical, similar or equivalent parts of the different figures bear the same numerical references so as to facilitate the transition from one figure to another.

[0062] The different parts represented in the figures are not necessarily on a uniform scale, in order to make the figures more readable.

[0063] DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

[0064] We now refer to [Fig.l] giving, schematically and partially and according to a sectional view, an arrangement of pixels Pi with improved charge overflow or charge threshold exceedance detection speed.

[0065] The pixel Pi belongs to an imager typically provided with a plurality of pixels identical to the pixel Pi and in particular arranged in a matrix. In the example shown, the pixel Pi comprises a photosensitive zone 12 intended to collect photons, during phases of exposure of the image sensor to at least one light radiation also called “illumination” of which the pixel Pi is part, and to convert these photons into electron-hole pairs. The photosensitive zone 12 is formed in a semiconductor substrate 10.

[0066] This substrate 10 may for example be based on silicon and comprises a first region 13 made of semiconductor material doped with a first type of conductivity, for example according to a P-type doping. The first doped region 13 extends in particular in a lower portion as well as in an upper central portion 131 of this pixel Pi. The substrate 10 has for example, at the location of the first doped region 13, a concentration of dopants of between 14 cm3 and 17 cm 3 atoms / cm3.

[0067] The photosensitive zone 12 is for example intended to be illuminated from a rear face 10B of the substrate 10. Although this is not shown in [Fig.l], the face rear face 10B of the substrate 10, opposite its front face 10A, may be coated with one or more passivation layers. On the side of the rear face 10B of the substrate 10, the pixel Pi may further comprise optical elements such as a filter and / or a microlens.

[0068] The pixel Pi is delimited and separated from neighboring pixels by a trench 16 called “peripheral isolation” formed around the photosensitive zone 12. The isolation trench 16 can completely surround the photosensitive zone 12 so as to form a closed contour making it possible to completely electrically isolate the photosensitive zone 12 of the pixel Pi from the photosensitive zones of neighboring pixels. As a particular example of an embodiment, a trench 16 of width (dimension measured parallel to the plane [O; x; y] of an orthogonal reference frame [O; x; y; z]) of the order of 160 nm can be provided.

[0069] As a variant, it is also possible to provide a peripheral isolation trench 16 producing a partial contour typically in the form of a succession of portions entirely defining at least the two sides or three successive sides of a rectangular perimeter while a part of this perimeter, for example a part of a side or an angle of the rectangle is open and does not include an isolation trench.

[0070] The peripheral insulation trench 16 is in particular a capacitive insulation trench, typically provided with a CDTI type structure (“Capacitive Deep Trench Isolation”) and extends vertically in the thickness (dimension measured parallel to the z axis of the orthogonal reference frame [O; x; y; z] in [Fig. 1]) of the substrate 10. The trench 16 is in this case lined, at the bottom and on its side walls, with at least one insulating layer 161, for example silicon oxide (SiO2) and filled with a conductive material 162, for example heavily doped polysilicon. The conductive material 162 is connected to a contact 164 to be polarized at a potential VCDTI. For example, in the case where the substrate 10 is of P type, the conductive region of the peripheral insulation trench 16 can be brought to a fixed potential VCDTI, for example of the order of 2.5 V.

[0071] In the particular embodiment example given in [Fig.l], the conductive material 162 of the CDTI structure is buried and extends only over a portion of the thickness of the substrate 10 between the front face 10A and the rear face 10B. Thus, the upper part of the trench 16 is not filled with the conductive material 162, but here comprises an insulating block 163, typically made of silicon oxide crossed by a contact 164, typically metallic, for example made of tungsten. An arrangement where the conductive material 162 extends completely through the thickness of the substrate 10 up to the front face 10A may alternatively be provided.

[0072] The pixel Pi further comprises a vertical transfer grid TG formed in the semiconductor substrate 10. The vertical transfer gate TG is arranged inside the part of the substrate 10 delimited by the peripheral isolation trench 16.

[0073] The vertical transfer grid TG is formed in another isolation trench 18 arranged vertically in the thickness of the substrate 10. This other trench 18 typically extends between the upper face 10A and a depth less than that of the peripheral isolation trench 16. The vertical transfer grid TG thus typically has a height less than that of the CDTI structure. As a particular example of embodiment, a trench 18 of width (dimension measured parallel to the plane [O; x; y] of an orthogonal reference frame [O; x; y; z]) of the order of 180 nm can be provided. The other trench 18 is interrupted in the thickness of the substrate 10 and does not open onto the side of the lower face 10B of the substrate 10.

[0074] The other trench 18 is here lined at the bottom and on its side walls with at least one dielectric layer 181, for example silicon oxide (SiO2) and is filled with a conductive material 182, for example heavily doped polysilicon. The conductive material 182 is connected to a contact 184 to polarize the transfer gate.

[0075] In the particular embodiment example given in [Fig. 1], the conductive material 182 is buried. Thus, the upper part of the trench 18 is not filled with the conductive material 182, but here comprises an insulating block 183, typically made of silicon oxide crossed by a contact 184, typically metallic, for example made of tungsten. An alternative arrangement where the conductive material 182 extends to the front face 10A may be provided as a variant.

[0076] In the embodiment illustrated in [Fig.2] (giving a top view of a particular arrangement of the pixel Pi), the other trench 18 forms a partial contour, in particular in the shape of a 'C' or a 'U' around a central and upper portion of the substrate 10.

[0077] Alternatively, and as illustrated in the example arrangement of the [Fig.3] (giving a perspective view of another particular arrangement of the pixel Pi), the transfer grid TG completely surrounds a central and upper portion of the substrate on which a detection node SN is provided.

[0078] During an exposure of the pixel Pi, the transfer gate TG is polarized so as to form a potential barrier between the photosensitive zone 12 and a portion 131 bordered by this vertical transfer gate TG. For example, in the case where the substrate 10 is of type P, the conductive region of the other trench 18 can be brought to a potential VTG, for example of the order of 1.5 V to impose the potential barrier.

[0079] The presence of the potential barrier makes it possible, during an exposure phase, to block a transfer of photo-generated holes from the photosensitive zone 12 to a so-called “collection” zone 151. This potential barrier results from the presence, along the side walls of the other insulation trench 18, of an inversion layer attracting carriers of the opposite type to the substrate 10, i.e. electrons, when the portion 131 is doped according to the first type of conductivity, here according to a P doping.

[0080] During a conventional reading phase subsequent to the exposure phase, the transfer grid TG is then brought to a distinct potential in order to lower, or even eliminate, the potential barrier. The disappearance of the potential barrier allows, during the conventional reading phase, a transfer of photo-generated holes from the photosensitive zone 12 to the collection zone 151.

[0081] In the example shown in [Fig.l], a portion 131 of the doped region 13 according to the first type of conductivity is located inside a space delimited by the vertical transfer grid TG, and in particular by the internal lateral walls of the vertical transfer grid TG.

[0082] Above this portion 131, there is the so-called “charge collection” zone 151, also doped according to the first type of conductivity, and which serves to form a detection node SN. The detection node SN makes it possible, for example, to transfer charges accumulated in the zone 151 to a reading circuit or a charge overflow detection stage.

[0083] The collection zone 151 extends in the thickness of the substrate 10, from its upper face 10A, and is bordered by the other isolation trench 18. The collection portion 131 is typically more heavily doped, in this example P+, ​​than the portion 131 located below. The detection node SN is also formed of a conductive element 154, typically in the form of a metal pad located on and in contact with the collection zone 151.

[0084] The pixel Pi also comprises a box 14 interposed between the peripheral isolation trench 16 for receiving the CDTI structure and the other trench 18 in which the vertical transfer gate structure TG is formed. The box 14 extends in the thickness of the substrate 10 and in particular in its upper part, from the upper face 10A of the latter.

[0085] The well 14 is doped and has a second type of conductivity opposite to the first type of conductivity. In this example, the well 14 is thus N-doped when the zone 13 is P-doped. The well 14 comprises a first part 141 in which it extends laterally from the trench 16 in which the CDTI structure is produced to the other trench 18 in which the vertical transfer gate structure TG is formed.

[0086] In the example shown, a conductive pad 144 is located on and in contact with a region 143 doped with the second type of conductivity, more strongly than the rest of the box 14.

[0087] In this example, region 143 can be N+ doped when the rest of well 114 is N doped. Conductive pad 128 makes it possible, for example, to provide a VNWELL potential to well 14.

[0088] With the pixel Pi, it is also possible to carry out a particular detection distinct from a succession of conventional exposure and reading phases.

[0089] During this particular detection operation called “charge overflow detection”, the transfer gate TG can be maintained at the same fixed potential. It is then detected, following illumination of the pixel Pi when the internal potential of a diode (i.e. the potential of the photosensitive zone 12) exceeds that of a potential barrier implemented by the gate bias TG, so that charges photo-generated following this illumination, in particular holes, overflow from the photosensitive zone 12 towards the collection zone 151, despite the potential barrier applied to the transfer gate TG. The diode is here formed by the first region 13 doped with the first conductivity type, for example P-doped and a well 14 of opposite doping and of the second conductivity type, for example N-doped.

[0090] A detection circuit provided for example with a comparator connected to the detection node SN can be provided for this purpose and configured to emit an overflow indicator signal following a variation in potential at the detection node due to an overflow of charges while the transfer gate is biased so as to maintain a potential barrier.

[0091] One way to adjust the amount of charge corresponding to the trigger or overflow threshold is to adjust the bias potential VTG that is applied to the transfer gate TG.

[0092] Advantageously, the pixel Pi here has the particularity of integrating a transistor M1 called “detection acceleration”, making it possible to make detection of charge overflow by the detection node SN mentioned previously faster. The transistor M1 can also make it possible, by runaway, to amplify the detection of charge overflow. It can therefore also make it possible to carry out detection with a reduced detection threshold.

[0093] This transistor M1 has a gate 191 arranged on the upper face 10A of the substrate and which is connected to the detection node SN.

[0094] In this example, the transistor M1 is an N-type transistor, in particular when the region 13 and the collection zone 151 of the detection node SN have P-type doping and are intended to collect charges in the form of photo-generated holes.

[0095] The transistor M1 has a channel region formed in a doped portion 135 of the substrate 10 having the first type of conductivity, in particular P type.

[0096] Thus, the box 14 may comprise a zone 142 which, unlike the part 141, does not extend entirely laterally from the trench 16 (in which the CDTI structure is arranged) to the other trench 18 (in which the vertical TG transfer gate structure is formed). The well 14 doped according to the second type of conductivity is thus interrupted in an upper zone of the substrate 10 in which the doped region 13 according to the first type of conductivity extends, a part 135 of this doped region 13 reaching the upper face 10A of the substrate 10.

[0097] Advantageously, the source region of the transistor Mi is formed in the zone 142 of the well 14. In this case, the well 14 and the source region of the transistor M1 have an identical polarization imposed by means of the conductive pad 144.

[0098] The transistor M1 comprises a drain region formed in a doped zone 172 and having the second type of conductivity. This zone, for example of the N+ type, is typically doped more heavily than the zone 142 of the well 14. In order to avoid a short circuit, it is possible here to provide an insulating zone 155, for example of the STI type, between the active zone and the drain zone 172 in this doped example.

[0099] To enable the transistor M1 to be isolated from the CDTI structure, an insulation block 55, for example made of silicon oxide (SiO2), may advantageously be provided between the transistor M1 and the trench 16. In the embodiment illustrated in [Fig.l], this block 55 is located between the zone 172 having the second type of conductivity forming the drain region of the transistor M1 and the peripheral insulation trench 16.

[0100] During a charge overflow detection operation, the following polarization can be adopted:

[0101] - a fixed VCDTI potential is typically applied to contact 164 to polarize the CDTI structure, this VCDTI potential being able to be, according to a particular embodiment, of the order of 2.5V;

[0102] - a fixed VTG potential is maintained on contact 164 to polarize the structure CDTI, this VTG potential being able to be, according to a particular embodiment, of the order of 1.5V;

[0103] - according to a first phase, an initialization potential Vinit_SN is applied to the detection node SN, for example of the order of 0V via the conductive element 154 then according to a second phase of the overflow detection operation, the conductive element 154 is left floating or in high impedance;

[0104] - according to a first phase, an initialization potential of the box 14 Vinit_NWELL, for example of the order of 1.3V is applied to the conductive pad 144 for polarization of the box then according to a second phase of the overflow detection operation, the conductive pad 144 is left floating or in high impedance;

[0105] Following the detection of a charge overflow by variation of the potential at the detection node SN, the initialization potential Vinit_NWELL is again applied to the well 14 and the initialization potential Vinit_SN to the detection node. The pixel Pi is then ready to carry out a new detection of de- load sheathing.

[0106] A mode of operation of the pixel Pi integrating the transistor Ml during an overflow detection operation will now be described in connection with Figures 5 and 6.

[0107] In [Fig.4], a possible evolution of the internal potential of the diode is given as a function of the depth at which one is located in the substrate 10 before illumination (curve Co) and after illumination (curve Ci)

[0108] [Fig.5] gives curves resulting from a simulation of an overflow detection operation carried out by illumination using radiation at an X wavelength of the order of 450 nm at a temperature of the order of 60°C.

[0109] Throughout the overflow detection operation, a fixed potential (CVTG curve) is maintained, for example of the order of 2.5 V on the TG grid.

[0110] When pixel Pi is illuminated (Q curve in broken lines), region 13 fills with positive charges (Ctr curve which increases).

[0111] If the internal potential of the diode formed by the region 13 and the well 14, which evolves according to the quantity of photo-generated charges, becomes higher than the potential of the barrier imposed by the transfer gate TG and which constitutes an overflow threshold, charges overflow towards the collection zone 151 of the detection node SN.

[0112] This causes a rise in the potential (increasing CVSn curve) of the detection node SN, which is connected to the gate of the NMOS type transistor Ml. The transistor Ml is then turned on.

[0113] When the channel of transistor M1 begins to conduct, the potential of well 14 corresponding here to the potential of the source region joins the voltage Vdrain applied to the drain region. This voltage Vdrain is typically a higher voltage than that of the source region of transistor ML. This contributes to the weakening of the inversion layer, and promotes the passage of charges towards the detection node SN. The potential barrier present between the portions of the gate TG is weakened.

[0114] The photosensitive zone 12 empties, and an overflow of charges can be detected simply by detecting a variation, in particular a rapid rise, of the potential on the detection node SN.

[0115] For this, the detection node SN can be connected, as in the particular embodiment illustrated in [Fig.6], to a stage 630 provided with a comparator to generate an overflow indicator signal S_OUT. A logic gate performing a “YES” function or alternatively a logic gate performing a “NO” function can also be used to implement this stage.

[0116] In this figure, the pixel Pi is associated with a control circuit 600, making it possible to apply different polarization signals to the pixel Pi during the operation of overflow detection and reset the Pi pixel after an overflow detection operation is performed to make it ready to perform a new overflow detection operation.

[0117] The control circuit 600 is provided with a first stage 610, in particular provided with a gate 612 performing a “NOT OR” logic function, comprising a first input capable of receiving a signal S_START for triggering the start of an overflow detection operation.

[0118] A second input of gate 612 is connected to the detection node SN itself connected to the gate of transistor M1.

[0119] The control circuit 600 may further be provided with a first coupling switch, here a first transistor 621, for example of the PMOS type. The first transistor 621 whose gate is controlled by the output signal S_NOR of the first stage 610 is provided to, when it is turned on, couple the detection node SN to a first initialization potential Vinit_SN and when it is turned off, to put the detection node SN in high impedance.

[0120] The control circuit 600 may also be provided with a second coupling switch, in particular a second transistor 622, for example of the PMOS type. The gate of the transistor 622 is controlled by the output signal S_NOR. The transistor 622 is designed to, when it is turned on, couple the well 14 to an initialization potential Vinit_NWELL and when it is turned off, to put the well 14 in high impedance.

[0121] An example of a timing diagram for the operation of such a circuit 600 is given in [Fig.7],

[0122] The overflow detection operation is initialized. This results in a change of state of the trigger signal S_START delivered at the input of stage 610. This causes a change of state of the signal S_NOR produced by gate 612 performing a NOR (NOR) function, which change of state turns on transistors 621 and 622. The initialization potentials Vinit_NWELL and Vinit_SN are then applied respectively to well 14 and detection node SN.

[0123] Then, according to a subsequent operating phase caused by a change in state of the trigger signal S_START, the signal S_NOR is modified so as to deactivate the transistors 621 and 622. The well 14 and the detection node SN are then put in a high impedance state HZ. An illumination causing an overflow of charges generates a variation in potential on the detection node SN which results for example in a peak 701 of potential on [Fig.7]. The stage 630 then delivers a signal (change in state of the signal S_OUT) indicating overflow.

[0124] The detection node SN being connected to the input of the NOR gate 612, this variation (peak 701) causes a change in the state of the S_NOR signal which turns transistors 621 and 622 on again and thus allows the well 14 and the detection node SN to be reinitialized respectively at the potential Vinit_NWELL and at the potential Vinit_SN. The pixel Pi is then ready to be able to carry out a new charge overflow detection.

[0125] The S_OUT overflow indicator signal may be a logic signal.

[0126] According to an advantageous embodiment, this signal S_OUT can be used to in- increment a counter and carry out a count of the number of overflows. Thus in the particular embodiment illustrated in [Fig.8], the indicator stage 630 is associated with a counter 810 configured to increment upon each reception or change of state of the signal S_OUT, an overflow indicator. It is thus possible to carry out an event count, each event here corresponding to an overflow detection. At the scale of the imager, an observation of the different pixels which detect an overflow can be implemented.

[0127] In the particular embodiment illustrated in [Fig.8], the pixel Pi is located in a first circuit level NI of a device comprising several superimposed levels NI, N2, N3. The control circuit 600 for applying different bias signals to the pixel Pi, as well as the overflow indicator stage 630 are here located in a second level N2 above the first level NI. A reading circuit 820 for allowing conventional reading of a quantity of charges from the detection node SN can also be arranged in the second level N2. In the illustrated configuration example, the counter 810 is here located on a third level N3, on which there is a correlated double sampling circuit CDS for ("correlated double sampling"). The levels NI, N2, N3 of components or circuits can be superimposed and linked together by an assembly technique commonly called "hybridization".

[0128] A charge overflow detection pixel as described above can find multiple applications and be integrated into a multiple pixel self-reset device as described in the document “Realization and opto-electronic Characterization of linear Self-Reset Pixel Cells for a high dynamic CMOS Image Sensor”, by Hirsch et al., Adv. Radio Sci., 17, 239-247, 2019.

[0129] The fast overflow detection pixel can also be integrated into a device using edge-of-die counters, and in particular photon counters such as those used in certain SPAD systems (SPAD for “Single-Photon Avalanche Diode”) and in particular in a system such as described for example in the document: “7.5 A 250fps 124dB Dynamic-Range SPAD Image Sensor Stacked with Pixel-Parallel Photon Counter Employing Sub-Frame Extrapolating Architecture for Motion Artifact Suppression”, J. Ogi, et al., 2021, IEEE International Solid-State Conference Circuits (ISSCC).

[0130] The fast overflow detection pixel can also be integrated into an event detection imaging device of the type such as, for example, that described in the document “5.10 A 1280x720 Back-Illuminated Stacked Temporal Contrast Event-Based Vision Sensor with 4.86pm Pixels, 1.066GEPS Readout, Programmable Event-Rate Controller and Compressive Data-Formatting Pipeline”, by Thomas Finateu et al., 2020 IEEE International Solid-State Circuits Conference - (ISSCC) or in the document: “A 1280x960 Dynamic Vision Sensor with a 4.95-qm Pixel Pitch and Motion Artifact Minimization”, by Yunjae Suh et al., IEEE International Symposium on Circuits and Systems (ISCAS), 2020, or in the document: “Development of Event-based Sensor and Applications”, Shoushun Chen, Om-niVision, 2020.

[0131] In the case where very rapid overflow detection is implemented, and the quantity of charges detected is limited, provision may be made to integrate a pixel with rapid charge overflow detection as described previously in an imager configured to carry out distance measurements on a scene, using the time elapsed between the emission by an emitting source of light radiation and the instant when the pixel overflow is detected following the reception by the imager of this radiation.

[0132] Such a device can then be further provided with a counter called TDC (“Time to Digital Counter”) for the temporal estimation of the arrival of the photons.

Claims

Claims

1. Image sensor comprising one or more pixels, each pixel (Pi) comprising: - a photosensitive zone (12) formed in a semiconductor substrate (10); - a peripheral isolation trench (16) extending vertically in the semiconductor substrate and laterally delimiting the photosensitive zone (12); - a detection node (SN) comprising a photo-generated charge collection zone (151) arranged at an upper face (10A) of the substrate (10), the charge collection zone (110) being doped and having a first type of conductivity, in particular of the P type; - a charge transfer grid (TG) extending vertically in the semiconductor substrate around the charge collection zone (151); - a box (14) interposed between the peripheral isolation trench (16) and the vertical transfer gate (TG), and arranged around the detection node (SN), the box (14) being doped and having a second type of conductivity, opposite to the first type of conductivity, in particular of type N, the photosensitive zone (12) being formed of a first doped region (13) which is of the first type of conductivity, in particular of type P, and which extends under the charge collection zone (151) and under the box (14) and forms a diode with the box (14), the sensor being provided with at least one pixel (Pi) integrating a transistor (Ml) called "detection acceleration", said transistor (Ml) called "detection acceleration" having a gate (191) arranged on said upper face (10A) of the substrate and which is connected to the detection node (SN), the transistor (Ml) "detection acceleration" being configured for,during an operation called “charge overflow detection” during which a bias of the transfer gate (TG) is applied so as to form a potential barrier then maintained and following an illumination of the photosensitive zone (12) during said operation causing a transfer of photo-generated charges from the photosensitive zone (12) to the detection node (SN) and a variation of potential at this detection node (SN), be turned on, the “detection acceleration” transistor turned on weakening the potential barrier and promoting a transfer of charges, photo-generated towards the detection node (SN) of the photosensitive zone, the “detection acceleration” transistor (Ml) comprising a channel region formed in a doped part (135) of the substrate (10) having the first type of conductivity and belonging to said first region (13).

2. Image sensor according to claim 1, wherein said channel region of the “detection acceleration” transistor (Ml) extends at an upper face (10A) of the semiconductor substrate between a zone (142) of said well (14), forming in particular a source region of said “detection acceleration” transistor (Ml), and another zone (172) having the second type of conductivity, and forming in particular a drain region of said “detection acceleration” transistor (Ml).

3. Image sensor according to claim 2, wherein said other zone (172) has the second type of conductivity and has a doping, in particular of type N+, greater than the doping of said zone of said well (114).

4. An image sensor according to one of claims 2 or 3, wherein an isolation block (55) is arranged between the peripheral isolation trench (16) and said other area (172) having the second type of conductivity.

5. Image sensor according to one of claims 1 to 4, further comprising a control circuit (600) configured to, during said charge overflow detection operation, apply a potential (VTG) to the transfer gate (TG) so as to maintain said potential barrier during said charge overflow detection operation.

6. Image sensor according to claim 5, wherein the control circuit (600) is configured to, during said charge overflow detection operation: in a first phase, apply to the gate (191) of said “detection acceleration” transistor (Ml), a first initialization potential (Vsninit) so as to keep the transistor (Ml) blocked then, in a second phase, put the detection node (SN) and the gate (191) of the “detection acceleration” transistor (Ml) in high impedance.

7. An image sensor according to claim 6 when attached to resale- indication 2, in which the control circuit (600) is configured to, during said first phase: apply to a source region of the “detection acceleration” transistor (Ml) a second initialization potential (VNWELLinit) preferably lower than a given potential (Vdrain) applied to a drain region of the “detection acceleration” transistor (Ml) then, during said second phase: put said zone (142) of said well (14) in high impedance while maintaining said given potential (Vdrain) on said other zone (172).

8. Image sensor according to one of claims 6 or 7, wherein the control circuit (600) is configured to, following said variation in potential on the detection node (SN), reset the detection node (SN) to the first initialization potential (Vinit_SN) and said zone (142) of said box (14) to the second initialization potential (Vinit_NWELL).

9. Image sensor according to one of claims 5 to 8, wherein the control circuit (600) is provided with: - a first stage (610), in particular provided with at least one gate (612) performing a “NOR” logic function, comprising a first input provided to receive a signal (S_START) for triggering the start of the detection operation and a second input coupled to the detection node (SN) and to the “detection acceleration” transistor gate (Ml), - a first coupling switch (621) controlled by the output signal of the first stage (610) and which is provided, when it is turned on, to couple the detection node (SN) to a first initialization potential (Vsninit) and when it is turned off, to put the detection node (SN) in high impedance, - a second coupling switch (622) controlled by an output signal of the first stage (610) and which is provided, when it is turned on, to couple the detection node (SN) to a first initialization potential (Vsninit) and when it is turned off, to put the detection node (SN) in high impedance, passerby,coupling the box (14) to a second initialization potential (VNWELLinit) and when it is blocked to put the box (14) in high impedance.,

10. Image sensor according to one of claims 5 to 9, in which the transistor (Ml) belongs to a charge overflow indicator circuit formed by an indicator stage (630), in particular provided with a comparator or a logic gate such as a logic gate performing a YES function or a NO function, configured to, consecu- tively to said variation of the potential on the detection node (SN), produce a signal (S_OUT) indicating said overflow.

11. Image sensor according to claim 10, wherein the overflow indicator circuit is associated with a counter (810) configured to increment upon each reception of said overflow indicator signal (S_OUT).

12. Image sensor according to one of claims 5 to 11, in which the pixels are arranged in a given level (Ni) of a device comprising several superimposed levels (Ni, N2, N3) of components and in which the control circuit is arranged in another level (N2) of the device, distinct from said given level, said given level and said other level being superimposed.

13. A time-of-flight image capture device comprising an image sensor according to one of claims 1 to 12.

14. An image capture device based on event detection comprising an image sensor according to one of claims 1 to 12.

Images