Process for producing patterns on a substrate

Abstract

Method for producing patterns on a substrate The present description relates to a method comprising the following steps: bonding a handle substrate (100) comprising a base (110) and relief elements (120) with a substrate of interest (200) comprising a support substrate (210) covered by a thin layer (220), the thin layer (220) comprising a material sensitive to an etching agent, whereby the thin layer (220) comprises first areas not covered by the relief elements (120) and second areas (Z2) covered by the relief elements (120), carrying out an etching with the etching agent to remove the material sensitive to the etching agent present in the first areas (Z1), the second areas (Z2) being protected during the etching, whereby the thin layer (220) is structured in the form of relief patterns (250), separating the handle substrate (100) from the substrate of interest (200). Figure for abstract: Fig. 7B

Description

Title of the invention: Method for producing patterns on a substrate Technical field

[0001] The present description relates generally to the field of microelectronics and more particularly to the production of patterns on a substrate with a view to manufacturing microelectronic components. Prior art

[0002] The development of microelectronic components requires the production of patterns on a substrate by photolithography.

[0003] Photolithography is carried out through different steps using a resin: spreading the resin on a substrate, exposing the resin using a mask, developing, etching and then removing the resin (or "stripping"). The removal step (or cleaning the resin) is a complex step because it requires finding a cleaning agent that is sufficiently aggressive to perfectly clean the resin while preserving the integrity of the different surfaces.

[0004] For each substrate on which microelectronic components must be produced, these different steps are repeated. However, these steps are not only long to implement, but, in addition, they generate significant costs, due in particular to the use of resins, solvents and cleaning solutions used. Summary of the invention

[0005] There is a need to obtain a method which makes it possible to produce patterns on a substrate while limiting the costs and duration of the method compared to current methods.

[0006] This aim is achieved by a method of structuring a substrate of interest comprising the following steps: a. bonding a handle substrate to a substrate of interest, the handle substrate comprising a base and raised elements covering the base, the substrate of interest comprising a support substrate covered by a thin layer, the thin layer comprising a material sensitive to an etchant, whereby the thin layer comprises first areas not covered by the raised elements and second areas covered by the raised elements, b. performing etching with the etchant, either wet or gaseous, to remove the etchant-sensitive material present in the first areas, the second areas being protected during etching, whereby the thin layer is structured in the form of relief patterns, c. separate the handle substrate from the substrate of interest.

[0007] One embodiment provides that the thin layer comprises a base material, preferably an oxide, and more particularly a silicon oxide, in which pads are arranged, preferably metal pads, and even more preferably copper pads.

[0008] One embodiment provides that the etchant-sensitive material is the base material.

[0009] Another embodiment provides that the material sensitive to the etchant corresponds to the pads.

[0010] A particular embodiment provides that the thin layer comprises barriers, preferably metal barriers, and more particularly copper barriers, forming lateral protection all around the second zones.

[0011] Another embodiment provides that, during the etching step, the barriers and the pads are etched.

[0012] Another embodiment provides that the method comprises an additional step between step b) and step c) during which the barriers and / or the pads are etched.

[0013] Another embodiment provides that the method comprises a subsequent step during which the handle substrate is used to structure another substrate of interest.

[0014] Another embodiment provides that, before the bonding step, the method comprises a step during which the handle substrate is covered with a protective layer containing the etching agent of the sensitive material. The protective layer may be an oxide layer or a hydrophobic layer, the hydrophobic layer being able to be formed from one or more compounds chosen from silanes, in particular chlorosilanes, and polymers comprising one or more halogens, preferably fluorinated polymers.

[0015] Another embodiment provides that the method comprises, before step a), a step during which the handle substrate is manufactured by locally forming a resin on a substrate, etching the substrate and removing the resin. Brief description of the drawings

[0016] These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the attached figures among which:

[0017] Figures 1A, 1B, 1C, 1D and 1E schematically represent different steps of a method for structuring a substrate according to a particular embodiment of the invention;

[0018] Figures 2A, 2B and 2C and 2D schematically represent different steps of a method for manufacturing a handle substrate according to a particular embodiment of the invention;

[0019] [Fig. 3] represents, schematically and in section, a handle substrate covered by a protective layer according to a particular embodiment of the invention;

[0020] Figures 4A, 4B, 4C, 4D and 4E schematically represent different steps of a method for making a handle substrate hydrophobic according to a particular embodiment of the invention;

[0021] Figures 5A, 5B and 5C schematically represent several configurations after bonding a handle substrate with a substrate of interest, according to different particular embodiments of the invention;

[0022] Figures 6A, 6B, 6C and 6D schematically represent different steps of a method for structuring a substrate of interest according to another particular embodiment of the invention; and

[0023] Figures 7A and 7B schematically represent different steps of a method of structuring a substrate of interest according to another particular embodiment, the substrate being represented in top view and the dotted lines representing the position of a raised element of the handle substrate;

[0024] Figures 7C and 7D schematically represent in section the substrate shown in Figures 7A and 7B respectively;

[0025] Figures 8A and 8B schematically represent different steps of a method of structuring a substrate of interest according to another particular embodiment, the substrate being represented in top view and the dotted lines representing the position of a raised element of the handle substrate;

[0026] Figures 8C and 8D schematically represent in section the substrate shown in Figures 8A and 8B respectively;

[0027] Figures 9A, 9B and 9C schematically represent different steps of a method of structuring a substrate of interest according to another particular embodiment, the substrate being represented in top view and the dotted lines representing the position of a raised element of the handle substrate. Description of the embodiments

[0028] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0029] For the sake of clarity, only the steps and elements useful for understanding the embodiments described have been represented and are detailed.

[0030] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected by means of one or more other elements.

[0031] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures in a normal position of use.

[0032] Unless otherwise specified, the expressions "about", "approximately", "substantially", and "of the order of" mean to within 10%, preferably to within 5%.

[0033] We will now describe in more detail the method of producing patterns on a substrate, firstly referring to Figures 1A to 1E.

[0034] The method comprises the following steps: a. bonding a handle substrate 100 with a substrate of interest 200, the handle substrate 100 comprising a base 110 and raised elements 120 covering the base 110, the substrate of interest 200 comprising a support substrate 210 covered by a thin layer 220, the thin layer 220 comprising a material sensitive to an etchant, whereby first zones Z1 of the thin layer 220 are not covered by the raised elements 120 of the handle substrate 100 and second zones Z2 of the thin layer 220 are covered by the raised elements 120 of the handle substrate 100 (figures 1A and 1B), b. performing an etching, by wet or gaseous means, with the etching agent adapted to the material sensitive to the etching agent, whereby the sensitive material present in the first zones Z1 of the thin layer 220 is removed, the raised elements 120 of the handle substrate 100 protecting the second zones Z2 of the thin layer 220 during the etching, and a thin layer 220 structured in the form of raised patterns 250 is obtained (figures IC and 1D), c. separating the handle substrate 100 from the substrate of interest 200, whereby a structured substrate of interest 200 is obtained comprising a support substrate 210 covered by 250 relief patterns ([Fig.lE]).

[0035] The handle substrate 100 forms a hard mask. It makes it possible to form patterns 250 on the substrate of interest without implementing photolithography steps. The method is thus simple and quick to implement.

[0036] In addition, with a single handle substrate 100, it is possible to form patterns on several substrates (wafers). The handle substrate is reusable, which further reduces process costs.

[0037] Prior to step a), it is possible to carry out one or more pre-treatments on the surface of the handle substrate 100 and / or on the surface of the substrate of interest 200 so as to make them compatible with direct bonding.

[0038] The pretreatment can be chosen from the following pretreatments: thermal annealing, plasma, polishing and wet cleaning.

[0039] By way of example, it is possible to form an oxide layer on the surface of the handle substrate 100 and / or to carry out a polishing step on the handle substrate 100 and / or on the substrate of interest 200 to obtain a roughness compatible with direct bonding (typically a roughness less than 0.5 nm RMS). It is possible to implement methods which combine, for example, a plasma and an aqueous solution, in particular an oxygen plasma followed by CARO wet cleaning (H2SO4, H2O2 in a proportion of 5:1) associated with SCI (H2O, NH3, H2O2 in a proportion of 5:1:1 at 70°C).

[0040] During step a), the handle substrate 100 and the substrate of interest 200 are brought into contact to be bonded.

[0041] The two substrates 100, 200 can be assembled by direct bonding. The use of marks on the substrates 100, 200 can facilitate their alignment. An accuracy of approximately 100 nm can be achieved. It is also possible to align them, without using marks, by using the edges of the substrates as well as their notch (or 'notch'). The accuracy is lower (+ / - 50 pm) but sufficient for certain applications.

[0042] Direct bonding can be carried out at atmospheric pressure (i.e. 1013.25 hPa) or under vacuum. The assembly does not necessarily need to be consolidated by heat treatment. However, annealing, at a temperature preferably below 200°C, can advantageously be carried out.

[0043] As shown in the attached figures, the handle substrate 100 comprises a base 110 and raised elements 120 (pillars or columns). The surface of the elements 120 can be of different shapes. It can be square, rectangular or even circular. The raised elements 120 have, for example, a height of between 1 μm and 200 μm or more specifically between 10 μm and 100 μm. These elements 120 are, preferably, spaced apart by more than 10 μm or even more than 50 μm in order to allow the infiltration of the etching agent (gaseous or liquid) by capillarity within the network formed by the raised elements 120.

[0044] The base 110 and the raised elements may be made of different materials. Preferably, they are made of the same material.

[0045] The handle substrate 100 is preferably obtained from a solid substrate. It may be a substrate made of metal or semiconductor material for example.

[0046] In particular, the raised elements 120 of the handle substrate 100 can be produced by means of a photolithography step, for example by means of the following sub-steps, represented in FIGS. 2A, 2B, 2C and 2D: - locally depositing a resin 140 on a substrate ([Fig.2A]), - etching the parts of the substrate not covered by the resin 140 to form elements 120 in relief in the substrate ([Fig.2B]), - remove resin 140 ([Fig.2C]), - possibly, cut out the substrate ([Fig.2D]).

[0047] Trimming the edge of the plate makes it possible to avoid possible edge contact between the handle substrate 100 and the substrate of interest 200.

[0048] The trimming can be carried out for example by photolithography / etching, or by mechanical trimming using a diamond saw. The width of the trimming is, for example, between 1 and 5 mm and / or its depth is, for example, between 100 and 250 μm.

[0049] During the etching step, the patterns 250 formed on the substrate of interest 200 by the vertical etching may also undergo horizontal etching, which thus modifies their lateral dimensions. This lateral etching effect may be taken into account in the dimensioning of the relief elements 120 in order to be able to obtain patterns 250 having the desired dimensions.

[0050] Furthermore, during step b), it is possible that the etching agent etches not only the material sensitive to the etching agent, but also the sides of the raised elements 120 of the handle substrate 100. For example, for etching the substrate of interest 200 of a few tens of micrometers, it is possible that the lateral dimension of the elements 120 of the handle substrate 100 is also reduced by a few tens of micrometers. If this handle substrate 100 is used again, the patterns 250 etched on the new substrate of interest will therefore have a smaller dimension than that obtained during the previous use. For certain applications, in particular for applications requiring fairly large patterns 250 (typically millimeter or centimeter patterns), a tolerance on the dimensional variations of a few tens of micrometers is acceptable.For other applications, particularly for applications requiring smaller patterns, for example less than a millimeter in size, it is desirable that the dimensions . elements 120 in relief of the handle substrate 100 are identical or substantially identical from one substrate of interest 200 to another substrate of interest.

[0051] In order to avoid any variation in dimension due to the etching, it is possible, for example, to cover the raised elements 120 with a protective layer 130, 135. This protective layer may be made of a hydrophobic material which will prevent the action of aqueous etching solutions or of a material which is inert with respect to the etching agent (or at least having a low etching speed by the etching agent). It is also possible to choose a handle substrate made of a material which is inert with respect to the etching agent (or at least having a low etching speed by the etching agent).

[0052] According to a first advantageous variant, the protective layer is an oxide layer 135. The oxide layer is inert with respect to the etching agent. The oxide layer 135 may have a thickness of between 20 nm and 5000 nm. The layer may also be called a film. It may be a thermal oxide, a native oxide or a deposited oxide, for example by chemical deposition of silicon alkoxide such as tetraethyl orthosilicate (TEOS) or silane in the vapor phase assisted or not by a plasma.

[0053] The oxide layer 135 can completely cover the raised elements 120 of the substrate 100 ([Fig.3]). It does not interfere with bonding.

[0054] In particular, in the case of a handle substrate 100 made of silicon, the oxide film is present over the entire handle substrate 110.

[0055] Advantageously, a handle substrate 100 covered with a layer of silicon oxide will be used to form patterns 250 on a substrate of interest 200 made of silicon or a metal such as copper. Since silicon oxide is not very sensitive to silicon etching agents (such as KOH, TMAH or an HF / HNO3 mixture) or to etching agents for metals such as copper (for example solutions formed from an H2SO4 / H2O2 / H2O mixture), the handle substrate 100 will not be etched and the geometry and dimensions of the raised elements 120 will be preserved.

[0056] According to a second advantageous variant, the handle substrate 100 may be partially or totally covered by a hydrophobic layer 130. The hydrophobic layer 130 acts as a barrier to the aqueous etching agent. The hydrophobic layer 130 may be inorganic or organic. The layer may also be called a film.

[0057] The choice of the hydrophobic layer 130 will depend on the handle substrate 100, the substrate of interest 200 and the etching solution 300.

[0058] The hydrophobic layer 130 has, for example, a thickness of between 2 and 1000 nm.

[0059] It may be a hydrophobic layer 130 obtained from a polymer or a silyl (also called organosilyl).

[0060] The chosen hydrophobic compound preferably comprises one or more halogen groups, in particular fluorine or chlorine groups. Preferably, the hydrophobic compound comprises a carbon chain of at least 5 carbon atoms.

[0061] The silane can be a chlorosilane such as octadecyltrichlorosilane (OTS = CH3 (-CH2)i7-SiCl3) marketed by the company Sigma Aldrich.

[0062] The polymers may be fluorinated polymers such as, for example, the Novec™ 1720 EGC polymer marketed by the company 3M™, Optool marketed by the company DAIKIN and the Novec™ 2202 EGC polymer marketed by the company 3M™. The hydrophobic compound may be chosen from chlorosilanes such as per-fluorodecyltrichlorosilane (FDTS = Cl3Si(CH2)2(CF2)7CF3) marketed by the company Sigma-Aldrich, perfluorodecyldimethylchlorosilane (FDDMCS = CF3(CF2)7(CH2)2(CH3)2SiCl) marketed by the company Sigma-Aldrich.

[0063] Preferably, the hydrophobic layer 130 is deposited by liquid means.

[0064] For example, with reference to Figures 4A to 4E, the hydrophobic layer 130 may be deposited according to the following steps:

[0065] - bonding the handle substrate 100 with a temporary substrate 400 (figures 4A and 4B),

[0066] - bringing the assembly obtained into contact with a solution 310 containing the compound hydrophobic, for example by immersion ([Fig.4C]),

[0067] - after possible rinsing, dry the substrate-handle 100, whereby the substrate-handle 100 is covered locally or even completely by a hydrophobic layer 130 ([Fig.4D]),

[0068] - separate the handle substrate 100 from the temporary substrate 400 ([Fig.4E]).

[0069] The side walls (flanks) of the raised elements 120 of the handle substrate 100 are covered with a hydrophobic film 130. The thickness of the hydrophobic film 130 is, for example, of the order of ten nanometers. The parts of the handle substrate 100 not exposed to the hydrophobic compound are compatible with a direct bonding process.

[0070] The temporary substrate 400 can be recycled, for example, by implementing an oxygen plasma treatment followed by wet cleaning.

[0071] The hydrophobic film 130 will make contact between the surface of the handle substrate 100 and the etching solution 300 impossible. Only the material sensitive to the etching agent of the substrate of interest 100 to be structured is etched, while preserving the morphology of the raised elements 120 of the handle substrate 100.

[0072] According to another advantageous embodiment, a handle substrate 100 and a substrate of interest 200 will be used whose etching rates are considerably different in the presence of an etching agent. Very advantageously, the etching solution 300 does not etch the handle substrate or only slightly.

[0073] Advantageously, the handle substrate 100 and the thin layer 220 to be structured are in different materials. For example, it is possible to choose different materials from a metal, a semiconductor material, an oxide, etc.

[0074] According to another advantageous variant, the material forming the handle substrate 100 may have a crystalline orientation different from that of the thin layer 120 to be structured of the substrate of interest 100. Thus, even if the materials are identical, their etching rates in a given solution will be different. The crystalline orientation will be chosen so that the etching rate of the handle substrate 100 in the etching solution is lower than the etching rate of the layer 220 in the etching solution 300.

[0075] For example, with silicon, it is possible to take advantage of certain anisotropic etching properties to achieve this effect. For example, the planes <111> silicon have a much lower etching rate by TMAH, TEAH or KOH than the surface <001> exposed. This therefore makes it possible to greatly limit lateral engraving by revealing planes <111> .

[0076] The substrate of interest 200 comprises the support substrate 210 covered by the thin layer 220 comprising at least one material sensitive to an etching agent.

[0077] The substrate of interest 200 may be an SOI ('Silicon on Insulator') substrate, i.e. comprising a support substrate 210 covered by a thin layer of buried oxide and a layer of silicon 220. The thin layer of oxide may act as an etching stop layer (vertical etching).

[0078] Alternatively, it may be a solid substrate 210 made of semiconductor material (silicon for example) covered with a dielectric layer 220, in particular an oxide layer (silicon oxide in particular).

[0079] Within the thin layer 220, elements 240 may be arranged. These elements 240 form vertical walls in the thin layer 220. These elements 240 surround the second zones Z2. These are protective barriers 240 making it possible to stop lateral over-etching, which can sometimes accompany the vertical etching of the etched material. The width of this barrier will be chosen so as to be sufficiently large to stop over-etching. The elements 240 may have identical or different shapes. They are, of course, made of a material different from the material sensitive to the etching agent.

[0080] The positioning of the elements 240 is preferably chosen so that, during the bonding of the handle substrate 100 and the substrate of interest 200, the elements 240 are positioned totally or partially under the raised elements of the handle substrate 100. The second zones Z2 to be protected are thus not exposed to the etching agent.

[0081] A lateral tolerance is also conceivable. For example, one of the relief elements 120 may protrude from the desired location of the pattern 250 or be offset by relative to the desired location of pattern 250.

[0082] Figures 5A, 5B and 5C show different possible configurations.

[0083] The raised element 120 may, for example, have a larger surface area than the surface to be protected positioned between the protective barriers 240 ([Fig.5A]) or a misalignment may exist between the raised elements 120 and the protective barriers 240, the protective barriers 240 thus protruding from the raised element 120 (FIGS. 5B and 5C).

[0084] Nevertheless, in these different configurations, the etching is effective and stops on the protective barrier 240. It is quite obvious that this case has limits and that the under-etching width is chosen so as not to be too large, for example a few tens of microns is acceptable. Preferably, 1 mm will not be exceeded and, more specifically, 500 pm will not be exceeded.

[0085] When the thin layer 220 comprises protective barriers 240, the method may comprise, between step b) and step c), an additional step during which the protective barriers 240 are removed. The method then comprises the following steps:

[0086] - gluing the handle substrate 100 and the substrate of interest 200 ([Fig.6A]),

[0087] - etch the etch-sensitive material present in the first ZI zones of the thin layer 220 not protected by the relief elements 120, with a suitable etching agent ([Fig.6B]),

[0088] - etch the protective barriers 240 with another etching agent ([Fig.6C]),

[0089] - separate the handle substrate 100 from the substrate of interest 200 ([Fig.6D]).

[0090] For certain applications, the thin layer 220 may comprise a base material (oxide in particular) and pads 230, in particular metal pads (FIGS. 7A to 7D, 8A to 8D and 9A to 9C).

[0091] In the case where the etching-sensitive material corresponds to the pads 230, the base material is not etched, and a thin layer 220 is obtained comprising a plurality of holes (blind or passing through the thin layer 220) and raised patterns 250 (FIGS. 7A to 7D). The holes are obtained by removing the pads 230. The raised patterns 250 correspond to the second parts Z2 of the thin layer 220 which was protected by raised elements 120 of the handle substrate 100.

[0092] According to a particular embodiment, the thin layer 120 comprises a base material, protective barriers 240 and pads 230.

[0093] The pads 230 may be surrounded by a protective layer to protect them during the etching step. For example, layers of Ti and TiN or Ta and TaN may surround copper pads 230. Specific types of etching may then be used for these materials.

[0094] According to a first variant embodiment, the protective barriers of the material of base 240 and the pads 230 are sensitive to the same etching agent. The protective barriers 240 are preferably made of the same material as the pads 230. Even more preferably, it is a metal, such as copper. Advantageously, the base material is an oxide, for example a silicon oxide. The protective barriers 240 and the pads 230 can thus be removed during a single etching step (FIGS. 8A to 8D). A thin layer 220 is thus obtained comprising a plurality of holes (blind or passing through the thin layer 220) at the level of the first zones Z1. The second zones Z2 of the thin layer 220 opposite the relief elements 120 are preserved during the etching step.

[0095] According to a second embodiment, the base material is sensitive to the etching agent. The protective barriers 240 and the pads 230 are not sensitive to the etching agent ([Fig.9A]). The protective barriers 240 and the pads 230 may be made of the same material or different materials. For example, the protective barriers 240 and the pads 230 are made of metal, preferably copper. The base material is, for example, an oxide, and in particular a silicon oxide. During the etching step, the base material present in the first zones ZI is etched. The protective barriers 240 and the metal pads 230 not sensitive to the etching element are preserved during the etching step ([Fig.9B]). A structure is obtained comprising relief patterns 250 surrounded by protective barriers 240. The relief patterns 250 comprise the base material in which the pads 230 are dispersed.The patterns 250 may be surrounded by the protective barriers 240. Between the patterns 250, the support substrate 210 is covered by the metal pads 230 ([Fig.9B] )• .

[0096] It is possible to carry out an additional etching step (or several additional etching steps) to remove the metal pads 230 and / or the protective barriers 240 ([Fig.9C]).

[0097] The metal barriers 240 and / or the metal pads 230 can be inserted into the oxide layer, for example with a Damascene type process.

[0098] In particular, it is possible to choose metallic barriers 240 and / or metallic pads 230 made of copper inserted in a layer of silicon oxide.

[0099] The metal barriers 240 and / or the metal pads 230 may be formed, for example, by physical vapor deposition (or PVD for “Physical Vapor Deposition”) and / or by electrochemical deposition (ECD).

[0100] Preferably, to form copper elements 230 by ECD, layers of Ti, TiN and Cu will be deposited beforehand by PVD. Deposition by ECD makes it possible to form elements of greater thickness than PVD. It is also possible to replace the layers of Ti and TiN with layers of Ta and TaN. The layers of Ti / TiN or Ta / TaN act as a barrier to the diffusion of copper into the silicon.

[0101] At the end of step b) or the additional etching step, the assembly can be rinsed by immersion and dried. Drying can be carried out by centrifugation.

[0102] The obtained substrate of interest 200 comprises a support substrate covered by the raised patterns 250. The thickness of the patterns depends on the intended application. The patterns can be formed from a base material ([Fig.6D]) or from a base material in which pads 230 are dispersed ([Fig.7D]). An element 240 can surround the patterns ([Fig.9B]).

[0103] Apart from the 250 patterns, several variant embodiments are possible, and in particular:

[0104] - the support substrate 210 can be covered with a thin layer 220 having blind holes ([Fig.7B]) or through holes in said layer 220,

[0105] - pads 230 can be positioned on the support substrate 210 ([Fig.9B]),

[0106] - the support substrate 210 may have a free surface (i.e. outside the patterns, no element covers the support substrate 210) ([Fig.9C]).

[0107] During step c), the assembly is dismantled by inserting, for example, a wedge between the two substrates 100, 200.

[0108] The handle substrate 100 can be used in a new bonding / etching cycle. Cleaning is advantageously carried out between each use.

[0109] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art.

[0110] Finally, the practical implementation of the embodiments and variants described is within the reach of those skilled in the art from the functional indications given above.

[0111] Illustrative and non-limiting examples of different embodiments

[0112] In the following examples, the substrates are made from silicon wafers 200 mm in diameter.

[0113] Example 1

[0114] A silicon wafer (handle substrate 100) undergoes oxidation so as to obtain a 100 nm film of silicon oxide on the surface. A photolithography / etching process makes it possible to form silicon oxide pads of 10 x 10 mm2 and a thickness of 100 pm (100 nm of SiO2 and 99.9 pm of silicon). The edge of the wafer 100 is trimmed with a diamond saw with a width of 3 mm and a depth of 200 pm. The oxide surface of the wafer 100 is cleaned by an O2 plasma followed by CARO, SCI wet cleaning so as to make it compatible with a direct bonding process.

[0115] An SOI wafer (substrate of interest 200) which has a support substrate 220 covered by a 205 nm 220 silicon film and a 400 nm buried oxide layer undergoes CARO / SC1 wet cleaning to make it compatible with a direct bonding process.

[0116] The two substrates 100, 200 are directly bonded to each other. In order to remove the native silicon oxide layer, the assembly is immersed for 10 s in a 1% HF solution, then rinsed in deionized water. A second etching of 3 min is then carried out at 70°C in an aqueous TMAH solution at 5% by mass. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0117] The handle substrate 100 is removed by inserting a wedge into the structure.

[0118] A plate of interest 200 is obtained comprising a silicon support substrate on which are arranged 250 silicon pads of 10 x 10 mm2 with a thickness of 205 nm.

[0119] Example 2

[0120] A silicon wafer (handle substrate 100) is produced as described in example 1. It has raised elements 120 (rectangular pads) of 10 x 5mm2 and a thickness of 15 μm.

[0121] A silicon wafer (temporary substrate 400) is prepared so as to make it compatible with direct bonding. The temporary substrate 400 and the handle substrate 100 are bonded directly. The assembly is immersed in a solution 310 of OTS (octadecyltrichlorosilane) in isooctane and then rinsed in isooctane. The temporary substrate 400 is then dismantled. The silicon wafer 100 has bonding sites in the form of rectangular pads 120 15 μm in height, the environment of which, including the sides, is covered with a hydrophobic film 130.

[0122] An SOI wafer (substrate of interest 200) which comprises a support substrate 210 covered by a 205 nm silicon film 220 and a 400 nm buried oxide layer undergoes CARO / SC1 wet cleaning in order to make it compatible with a direct bonding process.

[0123] The substrate of interest 200 and the handle substrate 100 are directly bonded. In order to remove the native oxide layer from the silicon, the assembly is immersed for 10 s in a 1% HF solution 300, then rinsed in DI water. A second etching of 3 min is then carried out at 70°C in an aqueous TMAH solution at 5% by mass intended to etch the silicon. The buried oxide layer of the substrate of interest allows the etching to be stopped. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0124] The handle substrate 100 is dismantled by inserting a wedge into the structure. The hydrophobic film 130 has made it possible to protect the silicon forming the raised elements 120 of the substrate 100 from etching, the dimensions of which have not been altered.

[0125] A plate of interest 200 is obtained comprising a silicon support substrate on which rectangular silicon patterns 250 of 10 x 5 mm2 with a thickness of 205 nm are arranged.

[0126] Example 3

[0127] Photolithography / etching is carried out on a silicon wafer (handle substrate 100) so as to form cylindrical elements 120 with a diameter of 10 mm and a thickness of 60 μm. The edge of the handle substrate 100 is trimmed with a diamond saw: with a width of 5 mm and a depth of 200 μm. This wafer is oxidized so as to form a 400 nm oxide film on the surface.

[0128] An SOI wafer (substrate of interest 200) comprises a support substrate 210 covered by a 205 nm silicon film 220 and a 400 nm buried oxide layer. The substrate of interest 200 undergoes CARO / SC1 wet cleaning to make it compatible with a direct bonding process. This substrate is immersed for 10 s in an etching solution 300 (1% HF), then rinsed in DI water.

[0129] The two substrates 100, 200 are bonded directly. The assembly is immersed for 3 min at 70°C in an aqueous solution of TM AH at 5% by mass intended to etch the silicon. The buried oxide layer of the substrate of interest 200 allows the etching to be stopped. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0130] The plate (handle substrate 100) is dismantled by inserting a wedge into the structure. The 400 nm oxide film present on the surface of this substrate 100 has made it possible to protect the raised elements 120 of the substrate from silicon etching, the dimensions of which have not been altered.

[0131] A substrate 200 is obtained comprising a silicon support substrate on which cylindrical silicon patterns 250 with a diameter of 10 mm and a thickness of 205 nm are arranged.

[0132] Example 4

[0133] On a silicon wafer (handle substrate 100), a photolithography / etching process makes it possible to form relief elements 120 of 10 x 10 mm2 and a thickness of 100 pm. The edge of this substrate 100 is trimmed with a diamond saw: with a width of 3 mm and a depth of 200 pm. The surface of the wafer 100 is cleaned by an O2 plasma followed by CARO, SCI wet cleaning so as to make it compatible with a direct bonding process.

[0134] A wafer (substrate of interest 200) undergoes oxidation so as to form a 100 nm oxide film 220 on its surface. This wafer 200 is wet cleaned so as to make it compatible with a direct bonding process.

[0135] The two substrates 100, 200 are bonded directly. The assembly undergoes annealing of 150°C for 2 hours and then immersed for 3 minutes in a 5% volume aqueous HF solution intended to etch the silicon oxide. Alternatively, the stack can be treated by exposing it to HF vapors. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0136] The handle substrate 100 is dismantled by inserting a wedge into the structure.

[0137] A 200 silicon plate of interest is obtained which has 250 cy patterns silicon oxide lindrics of 10 x 5 mm2 and a thickness of 100 nm.

[0138] Example 5

[0139] A silicon wafer (substrate-handle 100) is produced as described in example 1. It has rectangular pads of 10 x 5mm2 with a thickness of 15 μm.

[0140] On a wafer (substrate of interest 200), 400 nm of oxide is deposited from TEOS. Then, layers of Ti, TiN and Cu are deposited by PVD with a thickness of 10, 50 and 200 nm. Finally, an electrochemical treatment by ECD makes it possible to deposit a Cu film of 1000 nm. A copper polishing step removes a thickness of copper of 200 nm and makes it possible to prepare the surface of the substrate 200 for direct bonding.

[0141] The two substrates 100, 200 are directly bonded. The assembly is immersed for 2 min in a 300 aqueous solution of DSP (H2SO4 / H2O2 / H2O in a proportion of 1 / 2 / 50) so as to etch the copper layers. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0142] This assembly is immersed in an SCI solution at 70°C for 2 min in order to etch the Ti and TiN layers. The assembly is then rinsed by immersion in water and then dried by centrifugation.

[0143] The plate (handle substrate 100) is dismantled by inserting a wedge into the structure.

[0144] A plate (substrate of interest 200) of silicon is obtained which has 250 patterns rectangular copper strips of 10 x 5 mm2 with a thickness of 1000 nm.

[0145] Example 6

[0146] A silicon wafer (handle substrate 100) is produced as described in example 1. It has rectangular elements 120 of 5 x 5mm2 with a thickness of 15 pm.

[0147] On a wafer (substrate of interest 200), a checkerboard of 230 copper pads surrounded by a thin protective layer of Ti / TiN within an oxide layer is produced as shown in [Fig.9A]. A protective barrier 240 made of copper surrounds the Z2 zones. The repetition pitch of the 230 copper pads is 5 pm for 230 square copper pads of 2.5 pm on each side. The copper barrier is 2.5 pm wide instead of two rows and columns of copper pads. The width and external length of the barrier have the same dimension of 5000-3.75-3.75=4992.5 pm. The Ti and TiN layers have a thickness of 10 nm and 50 nm. The thickness of the 230 copper pads is 500 nm. They are manufactured using a classic copper damascene process with Ti / TiN protective layers. Chemical-mechanical polishing is carried out after the damascene process to make the surface compatible with a hybrid direct bonding process.

[0148] The two substrates 100, 200 are aligned and bonded.

[0149] After bonding, the assembly undergoes annealing at 150°C for 2 hours. The assembly is then immersed for 3 minutes in a 5% volume aqueous HF solution intended to etch the silicon oxide. The assembly is then rinsed by immersion in water and then dried by centrifugation. The configuration obtained is that of [Fig.9B]. The two substrates 100, 200 can be detached and areas of interest are thus obtained that are compatible with future direct bonding on another plate of interest. It is also possible not to detach the two substrates 100, 200 and to etch the copper pads 230 not protected by the raised elements 120 and / or the protective barrier 240. For this, the assembly is immersed for 2 min in an aqueous solution of DSP (H2SO4 / H2O2 / H2O in proportion 1 / 2 / 50) so as to etch the copper. The assembly is then rinsed by immersion in water and then dried by centrifugation.This assembly is then immersed in an SCI solution at 70°C for 2 min in order to etch the Ti and TiN layers. The assembly is then rinsed by immersion in water and then dried by centrifugation. The assembly obtained corresponds to the configuration of [Fig.9C]. The two substrates 100, 200 can then be detached.

Claims

Claims

1. A method of structuring a substrate of interest comprising the following steps: a. bonding a handle substrate (100) to a substrate of interest (200), the handle substrate (100) comprising a base (110) and raised elements (120) covering the base (110), the substrate of interest (200) comprising a support substrate (210) covered by a thin layer (220), the thin layer (220) comprising a material sensitive to an etchant, whereby the thin layer (220) comprises first areas (Z1) not covered by the raised elements (120) and second areas (Z2) covered by the raised elements (120), b. carrying out etching with the etching agent, by wet or gaseous means, to remove the material sensitive to the etching agent present in the first zones (Z1), the second zones (Z2) being protected during etching, whereby the thin layer (220) is structured in the form of relief patterns (250), c. separating the handle substrate (100) from the substrate of interest (200).

2. Method according to claim 1, characterized in that the thin layer (220) comprises a base material, preferably an oxide, and more particularly a silicon oxide, in which pads (230) are arranged, preferably metal pads, and even more preferably copper pads.

3. Method according to claim 2, characterized in that the material sensitive to the etchant is the base material.

4. Method according to claim 2, characterized in that the material sensitive to the etching agent corresponds to the pads (230).

5. Method according to any one of the preceding claims, characterized in that the thin layer (220) comprises barriers (240), preferably metallic barriers (240), and more particularly copper barriers, forming lateral protection all around the second zones (Z2).

6. Method according to claims 4 and 5, characterized in that, when the etching step, the barriers (240) and the pads (230) are etched.

7. Method according to claims 3 and 5, characterized in that the method comprises an additional step between step b) and step c) during which the barriers (240) and / or the pads (230) are etched.

8. A method according to any preceding claim, characterized in that the method comprises a subsequent step in which the handle substrate (100) is used to structure another substrate of interest.

9. Method according to any one of the preceding claims, characterized in that, before the bonding step, the method comprises a step during which the handle substrate (100) is covered by a protective layer with the etching agent of the sensitive material (130, 135).

10. Method according to claim 9, characterized in that the protective layer is an oxide layer (135) or a hydrophobic layer (130), the hydrophobic layer (130) being able to be formed from one or more compounds chosen from silanes, in particular chlorosilanes, and polymers comprising one or more halogens, preferably fluorinated polymers.

11. A method according to any preceding claim, characterized in that the method comprises, before step a), a step in which the handle substrate (100) is manufactured by locally forming a resin (140) on a substrate, etching the substrate and removing the resin (140).

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