SUPPORT COMPRISING AN ELECTRICAL CHARGE TRAPPING LAYER FOR A COMPOSITE SUBSTRATE.

FR3158587A1Active Publication Date: 2025-07-25SOITEC SA
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Patent Information

Application Number
FR2024000567
Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-01-19
Publication Date
2025-07-25
Estimated Expiration
2044-01-19

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Abstract

The invention relates to a method for preparing a support (1) for a composite substrate (S) comprising forming a surface porous layer (P) on a first face (1c) of the support (1), dispensing a viscous solution comprising a solvent and a precursor of a filling material onto the first face (1c) of the support (1) so as to absorb at least part of the viscous solution into open pores of the surface porous layer (P). In a fourth step, the support (1) is heat-treated to transform the viscous solution present in the open pores so that they are filled with the filling material. Figure to be published with the abstract: Fig 1
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Claims

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15. which the filling material is silicon oxide. Preparation process according to one of the two preceding claims in which the precursor of the filling material is a hydrogenated silsesquioxane resin. Preparation process according to one of the preceding claims in which the process comprises, before the fourth heat treatment step, a preliminary step of evaporation of the solvent. Preparation process according to one of the preceding claims in which the fourth heat treatment step comprises exposing the support (1) to a temperature between 300°C and 1100°C. Preparation method according to one of the preceding claims, in which a covering layer (4) comprising the filling material is also formed on and in contact with the surface porous layer (P). Preparation method according to the preceding claim, in which the covering layer (4) is removed. Method for manufacturing a composite substrate (S) comprising providing a support (1) prepared according to one of the preceding claims and transferring a thin monocrystalline layer (4) onto the first face of the support. Manufacturing method according to the preceding claim in which the monocrystalline thin layer (4) is made of silicon, silicon carbide or a piezoelectric material. [Fig. 1] Figure 1 there Figure 3a

Citation Information

Patent Citations

  • Method for producing patterns in a substrate

    US11049724B2

  • Silicon on porous silicon

    US20170062284A1

  • Semiconductor structure comprising an underground porous layer, for RF applications

    US20220359272A1

  • Silazane polymers from {R+40+HD 3Si}2NH and organochlorosilanes

    US4312970A

  • Multilayer ceramics from hydrogen silsesquioxane

    US4756977A