Silicon-integrated III-V photonic device

Abstract

The invention relates to a photonic device comprising: a first waveguide having a core of a type III-V semiconductor material; a second waveguide having a silicon core; a coupling structure comprising: a first extension of the core of the first waveguide; a second extension of the core of the second waveguide disposed below said first extension and disposed with regard to said first extension; an encapsulation structure of an encapsulation material having a refractive index between: on the one hand the refractive index of silicon; and on the other hand the highest refractive index in the core of the second waveguide; the encapsulation structure being disposed between the second extension and the first extension at least along the stacking direction.

Description

Title of the invention: Silicon-integrated III-V photonic device Scope

[0001] The invention relates to a heterogeneous photonic device consisting of III-V type semiconductor optical components co-integrated with silicon optical components on silicon substrates. Problem raised

[0002] Numerous fabrication techniques have been developed to create microstructures and nanostructures on semiconductor substrates, thus enabling the creation of integrated circuits and systems. These systems cover a wide range of applications, including transistor-based microelectronic circuits, MEMS (Micro-Electro-Mechanical Systems) or NEMS (Nano-Electro-Mechanical Systems) microsystems, integrated sensors (such as pressure sensors, accelerometers, chemical sensors, etc.), as well as photonic and optoelectronic systems integrated on a semiconductor substrate.

[0003] More specifically, it is possible to produce photonic circuits integrating laser emitters associated with layers for processing the emitted beams (guiding, multiplexing / demultiplexing, amplification, etc.), these processing layers being deposited on a silicon substrate (commonly called "Photonic on Silicon").

[0004] The integration of laser sources and optical amplifiers onto silicon photonic circuits has been developing rapidly in recent years, driven by the growing need for integrated photonic circuits in various fields, such as optical communications, sensing, quantum computing, and programmable photonics. The integration of lasers and amplifiers based on III-V semiconductors onto silicon wafers makes it possible to combine the versatility, high density, and ease of large-scale production of CMOS technology with the enhanced performance achieved through the use of III-V semiconductor materials. This is referred to as heterogeneous integration of photonic components made of III-V semiconductor materials and silicon photonic components.Heterogeneous integration remains the most suitable option for implementing silicon-based III-V lasers and amplifiers with high production volume and an advanced level of technological maturity.

[0005] The integration of lasers and amplifiers on-chip requires an efficient optical mode transition between the III-V type material and the passive silicon photonic platform. Typically, adiabatic cones are used to minimize optical loss during this transition. For this, a phase-matching condition is required. As an illustrative example, [Fig. 1a] shows a top view, according The (X,Y) plane of a state-of-the-art DO photonic device fabricated by layer stacking on a silicon substrate (not shown). The layers are stacked in the Z direction, perpendicular to the (X,Y) plane. The DO photonic device comprises a first waveguide WG1' with a core of IILV semiconductor material and a second waveguide WG2' with a silicon core. The DO photonic device also includes an optical coupling structure SC' for transferring at least a portion of an optical signal propagated from the first waveguide WG1' to the second waveguide WG2', or vice versa. The optical coupling structure SC' comprises a first 10' extension of the core of the first waveguide WG1' and a second 20' extension of the core of the second waveguide WG2', positioned below the first 10' extension.These two extensions, 10' and 20', are positioned at different heights along the Z-axis and are placed opposite each other to define an overlap zone. The transfer of the optical signal from one waveguide to the other occurs in this overlap zone, ZC (also called the coupling zone). To achieve effective optical coupling between these two extensions, the effective refractive index for the mode confined in the second waveguide, WG2', must be at least as high as the effective refractive index for the mode confined in the first waveguide, WG1', thus constituting optical coupling. For the same dimensions, the effective propagation index in silicon is significantly lower than that in IILV material. Therefore, to equalize the effective propagation indices in the opposing regions of silicon and IILV material, it is necessary to increase the dimensions of the silicon region.This increases the size of the optical coupler, particularly the thickness of the silicon extension.

[0006] Several problems have been clearly identified in state-of-the-art photonic circuits. Indeed, optical coupling between an IILV component and a silicon waveguide requires a silicon waveguide thickness of approximately 500 nm. However, industrial silicon photonic platforms have inherent limitations in the development of integrated IILV lasers and amplifiers, as silicon photonic circuits have geometric dimensions optimized only for passive functions. In particular, the height of silicon waveguides is limited to 220 nm or 300 nm in industrial foundries, which constitutes a major constraint. Active IILV devices integrated on silicon waveguides less than 500 nm thick exhibit poor performance due to very limited optical signal transfer between the IILV components and the silicon components, or vice versa.This results in significant optical signal loss during the transition between an active component (IILV) and a passive component (silicon).

[0007] Figure 1b illustrates the simulation results of the optical transition for silicon waveguides with thicknesses of 500 nm, 300 nm, and 220 nm in a state-of-the-art device. Using a 500 nm thick silicon waveguide (left) allows for efficient coupling between the IILV waveguide and the silicon waveguide, with the optical mode almost entirely confined within the silicon waveguide at the end of the transition. However, thickening the silicon waveguide requires additional deposition steps, making the fabrication process slower, more complex, and more expensive. Conversely, using the standard thicknesses of 300 nm and 220 nm for the silicon waveguide significantly reduces the efficiency of the optical signal transfer.At the exit of the coupling zone, a significant proportion of the optical signal remains confined within the IILV semiconductor waveguide, resulting in a significant loss of the optical signal propagating through the silicon waveguide. Prior art / State of the art restrictions

[0008] The scientific publication [1] describes a solution that involves inserting an additional layer of polycrystalline silicon between the silicon waveguide and the IILV-type semiconductor waveguide to improve optical coupling. This approach is incompatible with standard silicon fabrication processes due to the need for high-temperature thermal annealing for the crystallization of the inserted additional layer. Thermal annealing degrades the optical properties of the photonic circuit and increases losses in the propagated optical signal.

[0009] The scientific publication [2] describes a solution that consists of microstructuring the extension of the silicon waveguide to obtain a periodic sawtooth structure in the coupling region. The drawback of this approach is that the microstructuring operation complicates the manufacturing process. Furthermore, the introduction of a non-regular rough surface in the silicon waveguide generates optical losses, which reduces transmission performance.

[0010] The scientific publication [3] describes a solution that consists of considerably reducing the thickness of the IILV semiconductor waveguide in the overlap region by placing the charge injection electrodes of the III-V active component on either side of said overlap region. This solution has several disadvantages. The first disadvantage is the need for an additional IILV layer growth step to create the N- and P-doped regions on each side. Such an epitaxial growth operation can induce degradation of the silicon waveguide due to its thermal budget. The second disadvantage is the injection of a lateral current, which introduces higher resistance. The third disadvantage relates to the lateral injection, namely the impossibility of using " The Quantum Confined Stark Effect (QCSE) during the development of electro-absorption modulated lasers: Response to the problem and proposed solution

[0011] To overcome the limitations of existing solutions, the invention proposes a coupling structure for an active III-V semiconductor component to a waveguide having a silicon core comprising an encapsulation structure for said core. The encapsulation structure makes it possible to increase the amount of transmitted optical signal without increasing the thickness of the silicon core. This makes it possible to considerably reduce the size of the silicon-integrated photonic device and to simplify the manufacturing process, which can be based on standard silicon wafers without additional silicon deposition.

[0012] In general, the invention provides an efficient solution for coupling the optical mode of a III-V waveguide to an industrial silicon photonic platform. From a manufacturing perspective, it is a simple solution that does not involve any etching or growth of the silicon photonic platform, which can add complexity and an additional risk to functionality.

[0013] From an optical point of view, the losses of the propagated optical signal after a transition are very negligible at the output of the coupling structure according to the invention. More specifically, the use of a SiGe coating structure in the context of the invention allows the growth of a crystalline layer known to have low propagation loss at the target wavelengths. Furthermore, the SiGe coating can be produced using standard silicon foundry processes, which facilitates its implementation and the quality of the resulting coupling structure. As the material is already used in standard CMOS foundries, it adds no risk of contamination and can be easily implemented in an existing production line. Summary / Claims

[0014] The invention relates to a photonic device comprising a stacking of layers on a substrate along a stacking direction; said stacking comprising: - a first waveguide having a core comprising a plurality of stacked layers; each layer of said plurality of layers being made of a type IILV semiconductor material; - a second waveguide having a silicon core; - an optical coupling structure for transferring at least a portion of an optical signal propagated from the first waveguide to the second waveguide or vice versa; the optical coupling structure comprising: • a first extension of the core of the first waveguide; • a second extension of the core of the second waveguide disposed below said first extension and disposed with respect to said first extension; • an encapsulation structure in an encapsulation material having a refractive index between: on the one hand the refractive index of silicon; and on the other hand the highest refractive index among those of said type III-V semiconductor materials, for a predetermined wavelength. The encapsulation structure is arranged between the second extension and the first extension at least along the stacking direction.

[0015] According to a particular aspect of the invention, the coating structure comprises a first coating layer disposed on an upper surface of the second extension.

[0016] According to a particular aspect of the invention, the encapsulation structure further comprises a second encapsulation layer disposed on a first lateral surface of the second extension and a third encapsulation layer disposed on a second lateral surface of the second extension. The second and third encapsulation layers are made of said encapsulation material.

[0017] According to a particular aspect of the invention, the coating material is transparent for a wavelength between 1520 nm and 1565 nm and / or for a wavelength between 1260 nm and 1360 nm.

[0018] According to a particular aspect of the invention, the coating material is the silicon-germanium alloy.

[0019] According to a particular aspect of the invention, the coating material is the silicon-germanium alloy of formula SiGex, with x between 0.2 and 0.6.

[0020] According to a particular aspect of the invention, the first coating layer has a thickness less than or equal to 130 nm.

[0021] According to a particular aspect of the invention, the silicon core of the second waveguide has a thickness less than or equal to 300nm.

[0022] According to a particular aspect of the invention, the width of the second extension varies gradually.

[0023] The invention also relates to a method for manufacturing a photonic device according to the invention comprising the following steps: a. fabricate, on a substrate, a waveguide having a silicon core comprising an extension on which is disposed an encapsulation structure made of an encapsulation material having a refractive index greater than that of silicon for a predetermined wavelength; b. fabricate a waveguide having a core comprising a plurality of stacked layers, with each layer of said plurality of layers made of a type III-V semiconductor material; by a succession of layer deposition and etching steps; the waveguide having an extension disposed with respect to the encapsulation structure; the refractive index of the encapsulation material being between: on the one hand, the refractive index of silicon; and on the other hand, the highest refractive index among those of said type III-V semiconductor materials, for a predetermined wavelength.

[0024] According to a particular aspect of the invention, manufacturing step a) comprises the following substeps: - provide a substrate on which is placed a waveguide having a silicon core, said waveguide being encapsulated in a dielectric layer; - etch the dielectric layer so as to expose at least one upper surface of the waveguide; - deposit on said upper surface a first coating layer of a coating material having a refractive index greater than that of silicon for a predetermined wavelength.

[0025] According to a particular aspect of the invention, the etching step is carried out in such a way as to further uncover at least a part of a first lateral surface and a second lateral surface of said waveguide having a silicon core.

[0026] According to a particular aspect of the invention, the deposition substep further comprises the deposition of a second coating layer on the exposed part of the first lateral surface and a third coating layer on the exposed part of the second lateral surface; the second coating layer and the third coating layer being made of said coating material.

[0027] According to a particular aspect of the invention, manufacturing step a) comprises the following substeps: - provide a substrate on which a starting layer of silicon is placed; - deposit on the starting layer a first coating layer made of a coating material having a refractive index higher than that of silicon for a predetermined wavelength; - to etch the stack formed by the starting layer and the first coating layer in such a way as to structure a waveguide having a silicon core having a top surface on which the first coating layer is placed;

[0028] According to a particular aspect of the invention, manufacturing step a) further comprises the following substep: encapsulating in a dielectric layer the assembly formed by the waveguide having a silicon core and the encapsulation structure. Detailed description

[0029] Other features and advantages of the present invention will become more apparent from the following description in relation to the following accompanying drawings.

[0030] Fig. 1a illustrates a top view of a photonic device according to the state of the art. This figure has already been described.

[0031] Figure [1b] illustrates the simulation results of the optical transition for a silicon waveguide with a thickness of 500 nm, 300 nm and 220 nm in a state-of-the-art device. This figure has already been described.

[0032] Fig. 2a illustrates a cross-sectional view of the photonic device according to the invention in the coupling zone.

[0033] Fig. 2b illustrates a top view of the photonic device according to the invention in the coupling zone.

[0034] Fig. 3 illustrates the evolution curves of the optical signal remaining in the active waveguide (in III-V), as a function of the evolution of the width of the silicon waveguide in the coupling zone, for several devices according to the invention and according to the state of the art.

[0035] Fig. 4a illustrates the steps of a first manufacturing process of the photonic device according to the invention.

[0036] Figure 4b illustrates the steps of a second manufacturing process for the photonic device according to the invention.

[0037] Figure 4c illustrates the steps of a third manufacturing process for the photonic device according to the invention.

[0038] In the figures illustrating the invention, the horizontal is represented by the X and Y directions of an orthogonal coordinate system (X,Y,Z). The Z direction of this orthogonal coordinate system represents the vertical direction. Hereafter, terms such as "upper," "lower," "above," "below," "top," and "bottom" are defined with respect to this Z direction. The terms "left" and "right" are defined with respect to the X direction. The terms "front" and "back" are defined with respect to the Y direction. Hereafter, the term "thickness" designates the maximum thickness of an element along the Z direction, also known as the stacking direction. The term "width" designates the dimension of a layer along the X direction.

[0039] Figure 2a illustrates a cross-sectional view, along the (X,Z) plane, of the DI photonic device according to the invention at the coupling zone ZC. Figure 2b illustrates a top view, along the (X,Y) plane, of the DI photonic device according to the invention at the of the coupling region ZC. The photonic device DI comprises an active component 1 formed by a stack of layers of type III-V semiconductor materials, arranged on a waveguide WG2 having a silicon core. The silicon core is encapsulated in a dielectric layer 40 having a lower refractive index than silicon, for example, SiO2. The assembly is arranged on a substrate SUB, defining a "substrate plane" parallel to the (X,Y) plane.

[0040] By way of example, the active component 1 is a laser source or an amplifier or modulator of an optical signal. The active component 1 comprises a ribbon heterostructure for generating and / or guiding an electromagnetic wave, a first electrode EL1, a second electrode EL2, and a third electrode EL3. The ribbon heterostructure includes a waveguide WG1 comprising a lower confinement layer 13, an upper confinement layer 11, and an active layer 12. The active layer 12 is confined between the lower confinement layer 13 and the upper confinement layer 11. The upper confinement layer 11 is made of a first type III-V semiconductor material, for example, P-doped InP or P-doped GaAs. The lower confinement layer 13 is made of a second type III-V semiconductor material, for example, N-doped InP or N-doped GaAs.The active layer 12 is made of a third semiconductor material having an energy gap value Egi2. Advantageously, the active layer 12 is made of a ternary or quaternary IILV alloy, for example InGaAsP or InGaAlAs. Alternatively, the active region 12 is made by a stack of alternating layers of different compositions of ternary or quaternary IILV alloys. The thickness of each layer of said stack is from a few nm to about ten nm so as to form a series of quantum wells (translation of the English expression "multi-quantum well layers"). The lower confinement layer 13 has a width greater than that of the active layer 12 and the upper confinement layer 11 so as to form a guiding ribbon (corresponding to layers 11, 12) arranged on a base (corresponding to the lower confinement layer 13).

[0041] The first waveguide WG1 extends along a guidance direction Y orthogonal to the stacking direction Z. The second waveguide WG2 extends along the same guidance direction Y orthogonal to the stacking direction Z. Alternatively, the second waveguide WG2 extends along a guidance direction Y different from that of the first waveguide WG1 and orthogonal to the stacking direction Z.

[0042] In the case of an active layer made by a bulk layer, the energy gap value Egndu of the material constituting the active layer 12 is less than the energy gap value Egi i of the upper confinement layer 11 and the gap value energy gap Egn of the lower confinement layer 13. In the case of an active layer made by stacking alternating layers, the materials constituting the layers of the alternating stack each have an energy gap value lower than the energy gap value Egi i of the upper confinement layer 11 and the energy gap value Egn of the lower confinement layer 13.

[0043] The third electrode EL3 is a layer of electrically conductive material disposed on the upper surface of the upper confinement layer. The first and second electrodes EL1, EL2 are two layers of electrically conductive material disposed on the lower confinement layer 13, on either side of the guide strip. Electrodes EL1, EL2, and EL3 are intended to be connected to an external electrical generator (not shown). Applying an electrical voltage between the third electrode EL3 and electrodes EL1, EL2 allows positive charge carriers (holes) to be injected into the volume of the upper confinement layer and negative charge carriers (electrons) into the volume of the lower confinement layer 13. The opposite charge carriers are confined in the small-bandgap active layer 12, where they recombine.The recombination of electrons and holes in the active layer 12 allows the emission of photons at a wavelength corresponding to the energy gap value Egi2. The photons emitted by recombination of injected charge carriers are confined in said layers and form an electromagnetic wave which propagates in the waveguide WG1 along the guidance direction Y.

[0044] The photonic device DI further comprises an optical coupling structure SC for transferring at least a portion of an optical signal propagated from the first waveguide WG1 to the second waveguide WG2, or vice versa. The optical coupling structure SC according to the invention comprises a first extension 10 of the core of the first waveguide WG1, a second extension 20 of the core of the second waveguide WG2, and an encapsulation structure 30.

[0045] The second extension 20 is arranged below the first extension 10. These two extensions 10 and 20 are positioned at different heights along the Z-axis and are placed opposite each other to define an overlap zone, also called the coupling zone ZC. The transfer of the optical signal from one waveguide to the other takes place in this coupling zone ZC. To obtain effective optical coupling between these two extensions, it is necessary that the effective refractive index for the mode confined in the second waveguide WG2 be at least as large as the effective refractive index of the mode confined in the first waveguide WG1. The encapsulation structure 30 is made of an encapsulation material having a refractive index n30 between, on the one hand, the refractive index of silicon and, on the other hand, the index The highest refractive index among the semiconductor materials forming each of the III-V semiconductor layers of the first extension 10, i.e., among the layers of the stack 11, 12, 13. The encapsulation structure 30 is positioned between the second extension 20 and the first extension 10 to separate them. The encapsulation structure 30 increases the amount of optical signal transmitted from the first waveguide WG1 to the second waveguide WG2, or vice versa, thus achieving an adiabatic optical mode transfer without increasing the silicon core thickness. Therefore, it is possible to transition from the active component 1 to the silicon photonic array while maintaining a standard silicon core thickness of 300 nm or less. This eliminates the need for an additional silicon growth and thermal annealing step in the fabrication process, simplifying it and preventing degradation due to thermal annealing.

[0046] In the encapsulation structure 30 according to the invention, the second extension 20 has a width Lx along the X direction that gradually increases as it progresses through the coupling zone ZC when the optical coupling structure SC is intended for a transition from the first waveguide WG1 of the active component 1 in a III-V semiconductor to the second silicon waveguide WG2 connected to the silicon photonic array. Conversely, the second extension 20 has a width Lx along the X direction that gradually decreases as it progresses through the coupling zone ZC when the optical coupling structure SC is intended for a transition from the second silicon waveguide WG2 connected to the silicon photonic array to the first waveguide WG1 of the active component 1 in a IILV semiconductor.The 30 coating structure also allows transition rates to be achieved above 90% for an extension width of less than or equal to 2pm.

[0047] Advantageously, the first extension 10 extends along a non-straight direction exhibiting a non-zero curvature with respect to the initial guiding direction Y at the end of the coupling zone ZC. This avoids interference between the residual optical signal in the first waveguide WG1 and the optical signal transmitted to the second waveguide WG2 at the output of the coupling structure ZC.

[0048] The encapsulation structure 30 comprises a first encapsulation layer 31 disposed on the upper surface 21 of the second silicon extension 20. The first encapsulation layer 31 has a refractive index n30 between, on the one hand, the refractive index of silicon and, on the other hand, the highest refractive index among the semiconductor materials forming the IILV semiconductor layers of the first extension 10, that is to say, among the layers of the stack 11, 12, 13 for wavelengths between 1520 nm and 1565 nm and / or between 1260 nm and 1360 nm. The first encapsulation layer 31 separates the first extension 10 of the second extension 20 in order to allow a better transition rate of the optical signal from one waveguide to the other.

[0049] Advantageously, the encapsulating material is transparent for a wavelength between 1520 nm and 1565 nm and / or for a wavelength between 1260 nm and 1360 nm. This prevents the absorption of the optical signal propagating in the encapsulating structure 30 during a transition.

[0050] Advantageously, the first coating layer 31 is made of SiGe. The use of SiGe as a coating material has shown a more efficient optical transition compared to other materials. More advantageously, the coating material is the silicon-germanium alloy of formula Si(ix)Gex, with x between 0.2 and 0.6. This concentration range allows for a refractive index between 3.6 and 4.05 while having a light absorption rate of less than 0.1% for wavelengths between 1520 nm and 1565 nm.

[0051] Advantageously, the thickness of the first coating layer 31 is less than or equal to 130 nm. This avoids the risk of confining the optical signal in the coating structure 30 following a transition operation through the coupling structure SC.

[0052] According to one embodiment of the invention, the encapsulation structure 30 further comprises a second encapsulation layer 32 disposed on a first lateral surface 22 of the second extension 20 and a third encapsulation layer 33 disposed on a second lateral surface 23 of the second extension 20. The second encapsulation layer 32 and the third encapsulation layer 33 are both made of the encapsulation material. This results in an encapsulation structure that covers all the external surfaces (upper and lateral) of the silicon core of the second waveguide WG2. This increases the effective refractive index of the second waveguide WG2. Indeed, the confined optical mode has an effective refractive index resulting from an average of the refractive indices around it. The high-index lateral walls 32,33 increase the value of the effective refractive index, making the transition more efficient.

[0053] Figure 3 illustrates the evolution curves of the optical signal remaining in the active waveguide (in III-V), as a function of the evolution of the silicon waveguide width in the coupling region, for several devices according to the invention and according to the prior art. The increase in the silicon waveguide width in the coupling region reflects the progression through the coupling region along the Y direction, since the second extension increases gradually (conical shape of Figure 2b). Curve C0 corresponds to a coupling structure according to the prior art without an encapsulating structure and with a silicon core thickness of 220 nm. Curve Cl corresponds to a coupling structure according to the prior art without an encapsulating structure. Curve C2 represents a state-of-the-art coupling structure without an encapsulation structure and with a silicon core thickness of 500nm. Curve C3 represents a coupling structure according to the invention with a 100nm SiGe encapsulation structure and a silicon core thickness of 300nm. Curve C4 represents a coupling structure according to the invention with a 130nm SiGe encapsulation structure and a silicon core thickness of 220nm. Curves C1 and C2 show that at least 10% of the optical signal remains confined within the first waveguide WG1 of the active component 1 along the entire coupling structure. This demonstrates that the transition has not been correctly implemented in state-of-the-art solutions. Curve C2 shows an efficient transition, where the residual signal in the first waveguide WG1 reaches 2% at a width Lx=lpm.However, the optical coupling structure of curve C2 requires an additional growth step of the silicon core to reach 500nm. Curve C3 shows an efficient transition, where the residual signal in the first waveguide reaches 2% at a width Lx=0.7pm. This indicates a faster transition than that of curve C2, for a thinner silicon core. Curve C4 also shows an efficient transition, where the residual signal in the first waveguide reaches 2% at a width Lx=0.6pm. This indicates a more efficient transition than that of curve C2, allowing for a less bulky SC optical coupling structure for a thinner silicon core.

[0054] Fig. 4a illustrates the steps of a first PI manufacturing process of the photonic device according to the invention.

[0055] The first step a) consists of fabricating, on a SUB substrate, a waveguide WG2 having a silicon core. The silicon core comprises at least one extension 20 on which is disposed an encapsulation structure 30 made of an encapsulation material having a refractive index n30 greater than that of silicon for a predetermined wavelength, for example between 1520 nm and 1565 nm or between 1260 nm and 1360 nm. Step a) comprises the following sequence of substeps.

[0056] A first substep (i) consists of providing a substrate SUB on which a waveguide WG2 having a silicon core is disposed. The waveguide WG2 is encapsulated in a dielectric layer 40. Next, a second substep (ii) consists of etching the dielectric layer 40 so as to expose at least one upper surface 21 of the waveguide WG2 at the level of an extension 20 of the core of said waveguide WG2. The etching is carried out by a sequence of resin deposition, lithography, and etching operations to define the areas to be etched. Next, the third substep (iii) consists of depositing on said upper surface 21 a first coating layer 31 of a coating material having an index of refractive index n30 greater than that of silicon. The first coating layer 31 constitutes the coating structure 30. For example, the third substep (iii) consists of growing by epitaxy a coating layer of Si(ix)Gcx on the upper surface 21, with preferably x, between 0.2 and 0.6. Step a) further includes an optional substep (iv) which consists of encapsulating the assembly obtained in a dielectric layer 41; for example in SiO2.

[0057] The second step (b) consists of fabricating a waveguide WG1 having a core of a type III-V semiconductor material by a series of layer deposition and etching steps. The waveguide WG1 has an extension 10 arranged with respect to the encapsulation structure 30. The refractive index of the encapsulation material is lower than that of the type IILV semiconductor material for the target wavelength range. The assembly formed by the extension 10, the extension 20, and the encapsulation structure 30 constitutes an optical SC coupling structure in a coupling zone ZC.

[0058] Figure 4b illustrates the steps of a second process P2 for manufacturing the device photonics according to the invention.

[0059] The first step a) consists of fabricating, on a SUB substrate, a waveguide WG2 having a silicon core. The silicon core comprises at least one extension 20 on which is disposed an encapsulation structure 30 made of an encapsulation material having a refractive index n30 greater than that of silicon for a predetermined wavelength, for example between 1520 nm and 1565 nm or between 1260 nm and 1360 nm. Step a) comprises the following sequence of substeps.

[0060] The first substep (i) is similar to that described for the first PL process. The second substep (ii) then consists of etching the dielectric layer 40 so as to expose an upper surface 21 of the waveguide WG2 at an extension 20 of the core of said waveguide WG2. Furthermore, said etching in substep (ii) is carried out so as to also expose at least a portion of a first lateral surface 22 and a second lateral surface 23 of the waveguide WG2 having a silicon core. The etching is performed by a sequence of resin deposition, lithography, and etching operations to define the areas to be etched. Next, the third sub-step (iii) consists of depositing on said upper surface 21 a first layer of coating 31, a second layer of coating 32 on the first lateral surface 22 and a third layer of coating 33 on the second lateral surface 23.The first coating layer 31, the second coating layer 32 and the third coating layer 33 are made of a coating material having a refractive index n30 greater than that of silicon and together constitute the coating structure 30. For example, the third substep (iii) consists of growing by . Epitaxially coating a layer of Si(ix)Gex onto the external surfaces of the silicon core, preferably with x between 0.2 and 0.6. Step a) further includes an optional substep (iv) similar to the encapsulation step of the first PL process

[0061] . The second step (b) consists of fabricating a waveguide WG1 having a core of a type III-V semiconductor material in a manner similar to step (b) of the first PL process.

[0062] Fig. 4c illustrates the steps of a third process P3 for manufacturing the photonic device according to the invention.

[0063] The first step a) consists of fabricating, on a SUB substrate, a waveguide WG2 having a silicon core. The silicon core comprises at least one extension 20 on which is disposed an encapsulation structure 30 made of an encapsulation material having a refractive index n30 greater than that of silicon for a predetermined wavelength, for example between 1520 nm and 1565 nm or between 1260 nm and 1360 nm. Step a) comprises the following sequence of substeps.

[0064] The first substep (i') consists of providing a substrate SUB on which a starting layer 2 of silicon is deposited. Then, the second substep (ii') consists of depositing on the starting layer 2 a first coating layer 31 of a coating material having a refractive index n30 greater than that of silicon.

[0065] The third substep (iii') consists of etching the stack formed by the starting layer 2 and the first coating layer 31 so as to structure a waveguide WG2 having a silicon core having an upper surface 21 on which the first coating layer 31 is disposed. The first coating layer 31 constitutes the coating structure 30. Step a) further includes an optional substep (iv') similar to the encapsulation step (iv) of the first PL process. The second step (b) consists of fabricating a waveguide WG1 having a core of a type III-V semiconductor material in a manner similar to step (b) of the first PL process. References

[0066] [1] Z hang, J., Haq, B., O'Callaghan, J., Gocalinska, A., Pe lucchi, E., Trindade, A.J & Roelkens, G. (2018). Transfe rprinting -based integration of a III-V-on-silicon distributedfeedback laser. Express Optics, 26(7), 8821-8830

[0067] [2] T. Thiessen et al., “Back-Side-on-BOX Heterogeneously Integrated III-V-on- Silicon O-Band Distributed Feedback Lasers, ” J. Light. Technol., vol. 38, no. 11, pp. 3000-3006, Jun. 2020, doi : 10.1109 / JLT.2020.2978413.

[0068] [3 ] T. Aihara et al., “Membrane buried- heterostructure DFB laser with an optically coupled 111-V / Si waveguide, ” Opt. Express, vol. 27, no. 25, p. 36438, Dec. 2019, doi : 10.1364 / oe.27.036438.

Claims

Demands

1. A photonic device (Dl) comprising a stacking of layers on a substrate (SUB) along a stacking direction (Z); said stacking comprising: - a first waveguide (WG1) having a core comprising a plurality of stacked layers (11, 12, 13); each layer of said plurality of layers (11, 12, 13) being made of a type III-V semiconductor material; - a second waveguide (WG2) having a silicon core; - an optical coupling structure (SC) for transferring at least a portion of an optical signal propagated from the first waveguide (WG1) to the second waveguide (WG2) or vice versa; the optical coupling structure (SC) comprising: • a first extension (10) of the core of the first waveguide (WG1); • a second extension (20) of the core of the second waveguide (WG2) disposed below said first extension (10) and disposed with regard to said first extension (10);• an encapsulation structure (30) made of an encapsulation material having a refractive index (n30) between: on the one hand the refractive index of silicon; and on the other hand the highest refractive index among those of said type III-V semiconductor materials, for a predetermined wavelength; the encapsulation structure (30) being arranged between the second extension (20) and the first extension (10) at least along the stacking direction (Z).;

2. Photonic device (Dl) according to claim 1 in which the encapsulation structure (30) comprises a first encapsulation layer (31) disposed on an upper surface (21) of the second extension (20).

3. Photonic device (Dl) according to any one of claims 1 or 2 wherein the encapsulation structure (30) further includes a second coating layer (32) disposed on a first lateral surface (22) of the second extension (20) and a third coating layer (33) disposed on a second lateral surface (23) of the second extension (20); the second coating layer (32) and the third coating layer (33) being made of said coating material.

4. Photonic device (Dl) according to any one of claims 1 to 3 wherein the coating material is transparent for a wavelength between 1520 nm and 1565 nm and / or for a wavelength between 1260 nm and 1360 nm.

5. Photonic device (Dl) according to any one of claims 1 to 4 wherein the encapsulation material is the silicon-germanium alloy.

6. Photonic device (Dl) according to claim 5 wherein the encapsulation material is the silicon-germanium alloy of formula Si(i. x)Gex, with x between 0.2 and 0.

6.

7. Photonic device (Dl) according to any one of claims 2 to 6 wherein the first coating layer (31) has a thickness less than or equal to 130 nm.

8. Photonic device (Dl) according to any one of claims 1 to 7 wherein the silicon core of the second waveguide (WG2) has a thickness (eSi) less than or equal to 300nm.

9. Photonic device (Dl) according to any one of claims 1 to 8 wherein the width (Lx(y)) of the second extension (20) varies gradually.

10. A method for manufacturing (PI, P2, P3) a photonic device (Dl) according to any one of the preceding claims comprising the following steps: a. fabricating, on a substrate (SUB), a waveguide (WG2) having a silicon core comprising an extension (20) on which is disposed an encapsulation structure (30) of an encapsulation material having a refractive index (n30) greater than that of silicon for a predetermined wavelength; b. fabricate a waveguide (WG1) having a core comprising a plurality of stacked layers (11,12,13), with each layer of said plurality of layers (11, 12,13) ​​made of a type III-V semiconductor material; by a succession of layer deposition and etching steps; the waveguide (WG1) having an extension (10) disposed with regard to the encapsulation structure (30); the refractive index (n30) of the encapsulation material being between: on the one hand the refractive index of silicon; and on the other hand the highest refractive index among those of said type III-V semiconductor materials, for a predetermined wavelength.

11. A manufacturing method (PI, P2) according to claim 10 wherein manufacturing step a) comprises the following substeps: (i) providing a substrate (SUB) on which is disposed a waveguide (WG2) having a silicon core, said waveguide (WG2) being encapsulated in a dielectric layer (40); (ii) etching the dielectric layer so as to expose at least one upper surface (21) of the waveguide (WG2); (iii) depositing on said upper surface (21) a first coating layer (31) of a coating material having a refractive index (n30) greater than that of silicon for a predetermined wavelength;

12. Manufacturing method (P2) according to claim 11 wherein the etching step (ii) is carried out so as to further expose at least a portion of a first lateral surface (22) and a second lateral surface (23) of said waveguide (WG2) having a silicon core.

13. Manufacturing method (P2) according to claim 12 wherein the deposition substep (iii) further comprises the deposition of a second coating layer (32) on the exposed part of the first lateral surface (22) and a third coating layer (33) on the exposed part of the second lateral surface (23); the second coating layer (32) and the third coating layer (33) being made of said coating material.

14. A manufacturing method (P3) according to claim 10, wherein the manufacturing step a) comprises the following substeps: (i') providing a substrate (SUB) on which a starting layer (2) of silicon is disposed; (ii') depositing on the starting layer (2) a first coating layer (31) of a coating material having a refractive index (n30) greater than that of silicon for a predetermined wavelength; (iii') etching the stack formed by the starting layer (2) and the first coating layer (31) so as to structure a waveguide (WG2) having a silicon core having a top surface (21) on which the first coating layer (31) is disposed;

15. Manufacturing method (PI, P2, P3) according to any one of claims 10 to 14 wherein manufacturing step a) further comprises the following substep: encapsulating (iv, iv') in a dielectric layer (41) the assembly formed by the waveguide (WG2) having a silicon core and the encapsulation structure (30).