Two-bit magnetoresistive random-access memory cell

GB2616375BActive Publication Date: 2025-05-14INTERNATIONAL BUSINESS MACHINE CORPORATION
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Patent Information

Application Number
GB2023008637
Authority / Receiving Office
GB · GB
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-11-12
Filing Date
2021-11-10
Publication Date
2025-05-14
Estimated Expiration
2041-11-10

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Abstract

Provided is a magnetoresistive random-access memory (MRAM) cell. The MRAM cell comprises a first heavy metal layer and a first magnetic tunnel junctions (MTJ) coupled to the first heavy metal layer. T
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Citation Information

Patent Citations

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    EP3839955A1

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  • Iterative write pausing techniques to improve read latency of memory systems

    US8004884B2