A power module

Abstract

A power module 100 for a BEV, comprises a base member 102, having a first planar surface comprising at least one semiconductor element 112 and one or more electronic components connected in a substant

Description

Technical Field of Invention The invention relates generally to power modules, and in particular to power modules for Battery powered Electric Vehicles (BEV’s). Even more particularly, the present invention relates to semiconductor power modules such as a traction power inverter module for converting DC power from High Voltage batteries into AC power that drives an electric motor of the vehicle. The present invention further relates to a method of manufacturing a power module, such as, a traction power inverter module. Background Traction inverters are essential component for battery powered electric vehicles (BEV) determining the vehicle’s operation, efficiency and performance. One of its main function is to convert a direct current (DC) supply from the vehicle’s batteries into an alternating current (AC) output. The AC output is then used to power the electric motor that drives the vehicle. For example, in an AC motor, the current in each phase must alternate the direction of flow between positive and negative at the right time according to the motor shaft rotation and desired torque, i.e. the faster the motor speed, the more frequent the alternation of current. This variable rate of changing current direction or frequency is precisely controlled by the traction inverter, as its primary function is to ensure the correct current is flowing in the motor phases at any instant by continuously monitoring the motor shaft angle and calculating the necessary current to produce the desired torque. Here, semiconductor switches play a crucial role in regulating the flow of electrical energy on converting DC to AC power They are responsible for switching the current on and off at a rapid rate so as to create the desired AC waveform. The type, the construction and the cooling of the switching elements, as well as, the layout and packaging are some of the most significant characteristics of any inverter design. Consequently, an effective thermal management, as well as, the reduction of electromagnetic interferences (EMI), e.g. interfering loop inductance, are crucial for the proper functioning of a traction power inverter. Effective thermal management, especially when used in a High Voltage (HV) environment (i.e. voltages at around 50V and above), ensures that the electronic components (i.e. semiconductor switches) do not overheat, yet operate within a desired temperature range (e.g. close to the operational limit), so as to optimise performance characteristics. However, thermal management also includes the optimisation of the components’ structural properties and the overall layout, thus allowing the reduction of the module’s overall size while maintaining or even improving its performance and / or reliability. Also, during manufacture of such modules, dielectric substrates (e.g. ceramics) are often used with thin copper sheets bonded and patterned (e.g. through etching) to one or both sides of the substrate (i.e. Direct Bond Copper, DBC). Other substrate constructions may include Active Metal Bracing (AMB) where a metal is bonded to the ceramic substrate via a high-temperature soldering process. The electrical components, e.g. Integrated Circuits (ICs), connections, input and output terminals are often mounted in multiple layers onto the substrate, with the components being dimensioned and arranged (layout) specifically tailored for a single chip design (e.g. from a particular manufacturer) and a predetermined power level, thus, limiting the prefabricated module to a single use design, as well as, reducing the possible yield for different power level applications leading to increased overall manufacturing costs. An example of a common inverter module 10 is shown in Figure 1. The module 10 consists of a dielectric substrate 12 with both surfaces coated with respective bottom and top copper sheets 14, 16. The bottom copper sheet 14 of is coupled to a heat sink 18 via solder 20 and the top copper sheet 16 is configured so as to provide a planer interconnect structure for a plurality of semiconductor devices 22 (e.g. ICs). In this particular example embodiment, the bottom surface of the semiconductors 22 is attached to the copper sheet 16 via DBC and respective bond wires 26 are used to connect the semiconductor device 22 with the patterned top copper sheet 16. Respective bus bars 24 are connected to the top copper sheet 16 via a bus bar solder joints 28 for power transmission. A plastic housing 34 is provided to protect the components which are also encapsulated with a gel 30 and epoxy 32. However, the bond wire connections with the ICs 22 requires a layout and footprint design specifically tailored for each one of the plurality of semiconductor devices 22 (ICs). Also, the great number of bond wires 26 required to connect the ICs 22 with the top copper sheet 16 is likely to lead to undesirable inductance, such as loop inductance. Accordingly, it is an object of the present invention to provide a power module, such as a traction power inverter module, with a layout and components adapted and configured to optimise overall performance, improve its adaptability to a wider range of power levels, as well as, simplify its manufacture and improve its cost-effectiveness. Summary of the Invention Aspects of the invention are set out in the independent claim(s). Dependent claims describe the optional features. According to a first aspect of the invention, there is provided a power module for a BEV, comprising: a base member, having a first planar surface comprising at least one semiconductor element and one or more electronic components connected in a substantially planar circuit pattern; at least one output terminal member, having a first end portion, operably coupled to said base member, and a second end portion, operably coupleable with an external output conductor; at least one input terminal member, comprising at least one electrically conducting terminal block having a bottom contact surface, operably coupled to said first planar surface of said base member and / or an interface surface of said at least one semiconductor element, and an upper contact surface, operably coupleable with at least one external input conductor, wherein said at least one terminal block is configured to tolerate a predetermined voltage level range between 48V and 1.5 kV and / or a predetermined current level greater than or equal to 100A, and an encapsulant, encasing at least said base member, said at least one output terminal member and said at least one input terminal member, so that said upper contact surface of said at least one terminal block is externally exposed. The input terminal of the present invention provides the advantage that the components can be arranged planarly, so as to minimise its dimension and overall mass, optimizing the BEV energy use efficiency. Furthermore, the relatively large bottom surface of the terminal block provides the advantage of an improved adaptability, i.e. the same terminal(s) and layout can be used for different chip designs (IC, integrated circuit), structurally as well as functionally. That is, the same terminal block can be used to operably interface with differently dimensioned chips from different vendors, and withstand a wide range of power levels that might be use. In addition, the encapsulated components and externally exposed contact surfaces ensures mechanical stability with improved ease of use. Advantageously, said at least one input terminal member is arranged on said base member so as to result in an input terminal loop inductance that is less than 5 nH (nano Henry) during operation. Advantageously, the power module further comprises a heat sink member coupled to a second planar surface of said base member. Preferably, said at least one terminal block is operably coupled to said heat sink member via at least one thermally conductive connection through said base member. This provides the advantage of an optimized inductance allowing for maximum switching speeds and reduced powertrain losses, reduced thermal stresses, as well as, minimal EMC generation. Advantageously, said at least one input terminal member comprises a first terminal block, having at least one first bottom contact surface operably coupled to said interface surface of said at least one semiconductor element, and a first upper contact surface operably coupleable with a first external input conductor, and a second terminal block, having a second bottom contact surface operably coupled to said first planar surface of said base member, and a second upper contact surface operably coupleable with a second external input conductor. Preferably, each one of said first and second upper contact surface is externally exposed through said encapsulant. Even more preferably, said first and second upper contact surfaces are spaced apart from said first planar surface of said base member at a respective first and second distance in a direction normal to said first planar surface of said base member. In one advantageous embodiment, said first distance is equal to said second distance. That is, the first upper contact surface is arranged coplanar to said second upper contact surfaces. In an alternative embodiment, said first distance is greater than said second distance. That is, the first upper contact surface is arranged planarly offset from the second upper contact surface. Advantageously, said at least one output terminal member and said at least one input terminal member are axially aligned with a longitudinal axis of said base member. Advantageously, said base member comprises at least one first electrically conducting layer bonded to a surface of a dielectric layer. Preferably, said first electrically conducting layer is a Cu (copper) sheet formed into a predetermined circuit pattern, and wherein said dielectric layer is a ceramic tile. Advantageously, said first end portion of said output terminal comprises an aperture configured to operably receive an external coreless current sensor. Preferably, said encapsulant comprises a recess formed through said aperture and configured to operably position said external coreless current sensor within said aperture. Brief Description of Drawings Example embodiment(s) of the invention are illustrated in the accompanying drawings, in which: Figure 1 (prior art) illustrates a simplified cross sectional schematic of a traction inverter; Figure 2 shows a perspective top view of an example embodiment of the power module of the present invention (a) including the encapsulation and external input conductors, and (b) with the encapsulation removed, but including the external input conductors; Figure 3 shows the example embodiment of Figure 2, but with a coreless current sensor provided in a suitable recess of the housing, (a)in a perspective top view, and (b) in a perspective bottom view; Figure 4 illustrates a first sequence of manufacturing the power module of the present invention, including the steps of (a) providing a first planarly patterned AMB substrate and electronic components (one NTC sensor, four SiC chips) with nano-wired backs for direct connection to the substrate or with silver sintering, (b) sintering the electronic components onto the substrate, and (c) connecting the semiconductor components (chip gates) with the patterned substrate; Figure 5 illustrates a second, subsequent sequence of manufacturing the power module of the present invention, including the steps of (a) providing HV input terminal blocks and bridging and output terminal connectors, (b) attaching the blocks and connectors to respective components, and (c) connecting respective control pins receptacles to the substrate (e.g. solder);; Figure 6 illustrates a third subsequent sequence of manufacturing the power module of the present invention, including the steps of (a) providing a housing via high-pressure injection moulding that is suitable for operably housing the components connected to the substrate (over-moulding), (b) sealing the housing and encapsulating the components, and (c) providing a coreless current sensor into the housing recess and through the output terminal, as well as, connecting two external input conductors to respective input terminals, e.g. via laser welding; Figure 7 shows (a) a cross-sectional view of an inductance field plot of the power module, (b) perspective view of a current density field plot of an intermediate circuit capacitor with the connected power module, and (c) a data plot of the real part of the complex inductance over a frequency range from 1 Hz to 500 MHz; Figure 8 shows different integration layouts for the power module (a) including a light pipe for external sensor(s), (b) with an integrated pyro device or OP cut-off switch, and (c) without any bond wires; Figure 9 shows a top view of an embodiment including three power modules operably coupled to the same heat sink member; Figure 10 shows an alternative embodiment of the power module including input terminal blocks, and Figure 11 shows top views of different layers of the embodiment in Figure 10, (a) a first planar layer, (b) a layer of the terminal block, (c) a layer of signal connections and (d) layer of busbar connections. Description The described example embodiment(s) relates to a power module, and in particular, a traction power inverter module for BEVs. Certain terminology is used in the following description for convenience only and is not limiting. The words ‘right’, ‘left’, ‘lower’, ‘upper’, ‘front’, Tear’, ‘upward’, ‘down’, ‘downward’, ‘above’, ‘below’ designate directions in the drawings to which reference is made and are with respect to the described component when assembled and mounted (e.g. in situ). The terms ‘inner’, ‘inwardly' and ‘outer’, ‘outwardly’ refer to directions toward and away from a designated centreline or a geometric centre of an element being described (e.g. central axis), the particular meaning being readily apparent from the context of the description. Further, as used herein, the terms ‘connected', ‘attached’, ‘coupled’, ‘mounted’ are intended to include direct connections between two members without any other members interposed therebetween, as well as indirect connections between members in which one or more other members are interposed therebetween. The terminology includes the words specifically mentioned above, derivatives thereof, and words of similar import. In the context of the present invention, the terms power module, power inverter, inverter, as well as, power traction inverter are used interchangeably. Further, the terms semiconductor device, Integrated Circuit (IC) and chip(s) are used interchangeably. Further, unless otherwise specified, the use of ordinal adjectives, such as, ‘first’, ‘second’, ‘third’ etc. merely indicate that different instances of like objects are being referred to and are not intended to imply that the objects so described must be in a given sequence, either temporally, spatially, in ranking or in any other manner. Through the description and claims of this specification, the terms ‘comprise’ and ‘contain’, and variations thereof, are interpreted to mean ‘including but not limited to’, and they are not intended to (and do not) exclude other moieties, additives, components, integers or steps. Throughout the description and claims of this specification, the singular encompasses the plural unless the context otherwise requires. In particular, where the indefinite article is used, the specification is to be understood as contemplating plurality, as well as, singularity, unless the context requires otherwise. Features, integers, characteristics, compounds, chemical moieties or groups described in conjunction with a particular aspect, embodiment or example of the invention are to be understood to be applicable to any other aspect, embodiment or example described herein unless incompatible therewith. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and / or all of the steps of any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and / or steps are mutually exclusive. The invention is not restricted to the details of any foregoing embodiments. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification (including any accompanying claims, abstract or drawings), or to any novel one, or any novel combination, of the steps of any method or process so disclosed. Although the example described is aimed to housed and encapsulated traction power inverters used in the automobile industry, it is understood by the person skilled in the art that the invention may be equally applicable to suitable rectifiers or DC-DC supply modules. An example embodiment of the traction power inverter 100 is now described with reference to Figures 2 and 3. The traction power inverter 100 comprises an AM B substrate 102 extending planarly along a longitudinal axis ‘L’. The substrate 102 is made of two electrically conductive copper (Cu) sheets 106,108 bonded to opposing surfaces of a dielectric layer 104 (e.g. a ceramic tile, or the like). The top copper sheet 106 is patterned (e.g. via etching, printing, vaporising or sintering) so as to suit the desired circuit pattern for the power module 100. The bottom Cu sheet 108 (i.e. bottom surface of the substrate 102) is attached to a heat sink 110 (see Figure 7 (a) or 10 for typical arrangement). Through-hole vias may be provided to thermally couple the top copper sheet 106 and / or electronic components coupled to the substrate 102 with the heat sink member 110 providing thermoregulation for the traction power inverter 100. It is understood by the person skilled in the art, that the substrate my also be a DBC substrate or any other suitable substrate. Also, the thermally conductive connection between the components and the heat sink member 110 may also be established by other suitable means, such as, for example, nanowire, sintering or solder connections. The circuit pattern of the top Cu sheet 106 is designed to suitably interconnect the electric components. Predetermined safety distances may be provided for High Voltage (HV) applications. In this particular example, the provided pattern is connecting four ICs 112 that are mounted to the patterned top Cu sheet 106, e.g. via soldering or sintering (or any other suitable means). In one example, nanowires may be used to connect the chip gates to the Cu sheet pattern, however, it is understood by the person skilled in the art that any other suitable connection may be used to operably mount the chip(s) 112 onto the substrate. The upper surface 113 of each one of the chips 112 is configured to operably interface with an input terminal for power transfer. Each semiconductor element 112 is designed for a current of at least 120 A (Ampere), and a preferred current of at least 150 A, and for a voltage of at least 400 V (Volt), and a preferred voltage at least 600 V. Referring now particularly to Figure 2, the traction power inverter 100 further comprises an output terminal 114 having a first end portion 116 operably coupled to the patterned top Cu sheet 106 and a second end portion 118 projecting away from the substrate 102. The output terminal 114 of this example embodiment is formed from a flat metal plate arranged substantially parallel to the planar surface and in line with the longitudinal axis ‘L’ of the substrate 102. An output terminal aperture 120 is provided at the first end portion 116 and is configured to operably receive a current sensor 122, such as, for example a coreless current sensor. The output terminal 114 is attached to the top Cu sheet 106, for example, by clipping, soldering, nano-wiring or sintering. The second end portion 118 of the output terminal 114 may be connected to an external conductor (not shown) configured to ‘feed’ the converted current to the electric motor. Furthermore, the power inverter of the present invention comprises an input terminal 124 operably coupled to and in an arrangement that is axially aligned with the longitudinal axis ‘L’ of the substrate 102. The input terminal 124 comprises a first electrically conducting terminal block 126 (e.g. negative input pole of a DC input current) having first bottom contact surfaces 130a,b operably coupled to respective upper surfaces 113 (interface) of two semiconductor device 112, and a second terminal block 140 (e.g. positive input pole) having a second bottom contact surface 144 operably coupled to the patterned top Cu sheet 106 of the substrate 102. Each one of the first and second terminal blocks 126,140 further comprises respective first and second upper contact surfaces 132, 146 configured to connect with respective external first and second input conductors 128, 148, during use. The distance between the first and second bottom contact surfaces 130a,b, 144 and their respective upper contact surfaces 132, 146 may be referred to as the terminal block height and is a characterising feature of each one of the first and second terminal block 126, 140, i.e. a predetermined terminal block height may be provided for each one of the first and second terminal block 126, 140 to allow for a desired (minimum) input current or voltage and / or to provide a desired thermal capacity (e.g. allow for laser welding without damaging the components). Furthermore, a particular terminal block height may be provided for each one of the first and second terminal blocks 126, 140 so that the first and second upper contact surfaces 132, 146 pass through respective first and second aperture 204, 206 of a housing 200 to allow connection with the external first and second input conductors 128, 148. Here, individual terminal block heights may be chosen so that the upper contact surfaces 132, 146 are vertically offset to each other. This vertical offset, provides the advantage that the external input conductors 128,142 can be coupled to respective upper contact surfaces 132, 146 in a particularly compact arrangement, i.e. axially aligned (i.e. spaced apart in the direction of the longitudinal axis ‘L^ and parallel to each other. In the example embodiment, the terminal block height of the first terminal block 126 is higher than the terminal block height of the second terminal block 140, thus, allowing the first external input conductor 128 to be positioned above (spaced apart and in superposition) and parallel to the second external input conductor 148, so as to provide a more compact arrangement. Further, the axial separation between the first terminal block 126 and the second terminal block 140 provides for two main sectors 302, 304, which are separated by a safety gap 306. The safety gap is established by an area without copper which is considered as non conductive. In this particular example embodiment the first and second terminal blocks 126, 140 are made of copper (Cu), however, it is understood by the person skilled in the art, that any other suitable electrically conducting material may be used for the input terminal blocks 126, 140. Further, the terminal blocks 126, 140 are configured (i.e. shaped, dimensioned) to tolerate a predetermined voltage level in a range between 48 V and 1.5 kV and / or a predetermined current level greater than or equal to 100 A. Any one of the terminal blocks 126, 140 and electronic components mounted on the top Cu sheet (i.e. top surface) of the substrate 102 may be thermally connected to a heat sink 110 mounted to the bottom Cu sheet 108 of the substrate 102 through thermal vias 136 passing through the substrate 102. The first sector 302 is connected to the output terminal member 114, two semiconductor elements 112 and a connection clip 150, with all components axially arranged along the longitudinal axis ‘L’. The input terminal member 124, comprising the first and second terminal blocks 126, 140, is connected to four semiconductor elements 112, i.e. two pairs, one pair provided within the first sector 302 and one pair provided within the second sector 304. The connection clip 150 operably couples the pair of semiconductor elements 112 arranged within the second sector 304 with the first sector 302 (bridging the gap 306). Further, the circuit pattern 300 of the top Cu sheet 106 comprises sectors with soldered or nano-wired connections fora plurality of control pins 152 arranged along a lateral edge of the substrate. A dedicated area (NTC sensor circuitry 308) is provided on the top Cu sheet 106 for an NTC-sensor. The NTC-sensor 154 is a temperature sensor with a Negative Temperature Coefficient, which means that the resistance decreases with increasing temperature. As shown in Figure 4(c), the chips 112 may be connected with control pin 152 via bond wires 310. The first and second terminal blocks 126, 140 are shaped, dimensioned and positioned in such a way that the resulting input terminal loop inductance is less than 5 nH (nano Henry) during operation. For example, the terminal blocks 126, 140 may be made of a material with a thickness in the range of 1 mm to 5 mm, and shaped so as to provide a terminal block height between 1 mm to 5 mm. Any one of the first and second terminal blocks 126, 140 may be formed as a cuboid or has a substantially U-shaped design. Figure 7(a) shows an illustration of a 2D-field plot of a power traction inverter 100 during use, indicating the inductance loop formed between the first and second input terminal blocks 126, 140 and the first and second external input conductors 128, 142. The illustration in Figure 7 (b) shows a 3D-field plot of an integration of a power traction inverter 100 to an intermediate circuit capacitor illustrated. The plot shows that an increased current density in the area of the traction inverter 100. The ‘Real’ part of the loop inductance is plotted against the Frequency in Figure 7(c), showing that the loop inductance is below 5 nH over a frequency range between 10 kHz and 100 MHz. For example, at a switching frequency of 50 MHz the loop inductance is in the region of 3.2 nH. Referring now to Figures 2(a) and 6, the traction power inverter 100 comprises a housing or enclosure or encapsulant 200 configured to enclose and seal the electronic components provided on the substrate 102, while providing access for the output terminal 114, as well as, sealable apertures 204, 206 for respective input terminal blocks 126, 140 (i.e. allowing external contact engagement with the external input conductors 128, 142). The housing or encapsulant 200 may be provided via transfer moulding or high-pressure injection moulding. However, it is understood by the person skilled in the art that any other method or process may be used to fabricate the housing and / or encapsulation. The housing or encapsulant 200 of the example embodiment comprises a recess 202 configured to fit into the aperture 120 provided at the first end portion 116 of the output terminal 114 and adapted to receive a coreless current sensor 122 (see Figure 6(c)). Respective apertures are also provided for each one of the plurality of control pins 152. Figures 8 and 9 show top views of alternative layouts and arrangements of the traction inverter module 100 of the present invention, however, the basic principle of utilising terminal blocks for the input terminal 124 remains substantially the same. For example, as shown in Figure 8(a), a light pipe 400 may be used for contactless temperature measurements or monitoring of one or more semiconductor devices 112, during operation. Figure 8(b) shows a traction inverter 100 with an integrated pyro device 402, whereas Figure 8(c) shows a traction inverter without using bond-wires. Figure 9 shows an embodiment of three traction inverters 100 mounted on one heat sink member 110. This allows for reduced overall packaging. Figure 10 shows a cross sectional side view of an alternative embodiment of the traction inverter module 100, that is very similar to the embodiment shown in Figure 2, but with the inclusion of a dielectric FR4 layer separating the terminal blocks 126, 140 and output terminal member 114 from the chips 112. The output terminal 114 and terminal blocks 126, 140 are electrically coupled to the top Cu sheet 106 and / or semiconductor devices 112 through suitable electrically conducting Vias (Cu Vias), which are in a very dense arrangement. Figure 11 shows the layout of the layers of a traction inverter 100 (see Figure 10) in a top view with (a) showing the layout of a first planar layer, (b) showing a layer of the terminal blocks within the FR4 layer, (c) showing a layer of signal connections with bond wires 310, and (d) showing the layer of the busbar connections. A method of manufacture and assembly is now described with reference to Figures 4 to 6, which illustrate a sequence of steps to assemble an example embodiment of the traction inverter module 100. In that order, the semiconductor devices 112 (chips) and the NTC sensor 154 are first connected to the top Cu sheet 106. Bond wires 310 may be used to connect the chip gates with respective sections of the patterned top Cu sheet 106 (e.g. signal outputs of the chips 112 with the patterned sections of control pins 152). In the next sequence, the input and output terminals 124, 114, the connection clip 150, as well as, the respective control pins 152 are placed and coupled with the proper sections of the substrate 102. In a final sequence, the housing or encapsulant 200 is mounted to the substrate 102 so as to enclose and seal the electric components, as well as, provide access points for the input terminal 124 (i.e. first and second terminal blocks 126,140). A coreless current sensor can then be placed into the recess 202 and through the aperture 120 of the output terminal 114. The traction inverter module is now ready for connection with the external input 128, 148 and output conductors. It will be appreciated by persons skilled in the art that the above embodiment(s) have been described by way of example only and not in any limitative sense, and that various alterations and modifications are possible without departing from the scope of the invention as defined by the appended claims. Various modifications to the detailed designs as described above are possible, for example, variations may exist in shape, size, arrangement, assembly or the like. Reference Numbers: 10 inverter module 130 first bottom contact surface 12 dielectric substrate 132 first upper contact surface 14 bottom copper sheet 136 thermal Via 16 upper copper sheet 140 second terminal block 18 heat sink 142 second external input conductor 20 solder 144 second bottom contact surface 22 semiconductors 146 second upper contact surface 24 bus bars 148 second external input conductor 26 bond wires 150 connection clip 100 traction power inverter 152 control pin(s) 102 base member, substrate 154 NTC sensor 104 dielectric layer 200 housing, encapsulant 106 top Cu sheet (patterned) 202 housing recess 108 bottom Cu sheet 204 first aperture 110 heat sink member 206 second aperture 112 semiconductor device, chip, IC 300 circuit pattern 113 upper surface 302 first sector 114 output terminal 304 second sector 116 first end portion 306 safety gap 118 second end portion 308 NTC sensor circuitry sections 120 output terminal aperture 310 bond wires 122 coreless current sensor 400 light pipe 124 input terminal 402 pyro device 126 first terminal block L longitudinal axis 128 first external input conductor

Claims

1. A power module for a BEV, comprising:a base member, having a first planar surface comprising at least one semiconductor element and one or more electronic components connected in a substantially planar circuit pattern;at least one output terminal member, having a first end portion, operably coupled to said base member, and a second end portion, operably coupleable with an external output conductor;at least one input terminal member, comprising at least one electrically conducting terminal block having a bottom contact surface, operably coupled to said first surface of said base member and / or an interface surface of said at least one semiconductor element, and an upper contact surface, operably coupleable with at least one external input conductor, wherein said at least one terminal block is configured to tolerate a predetermined voltage level range between 48V and 1.5 kV and / or a predetermined current level greater than or equal to 100A, andan encapsulant, encasing at least said base member, said at least one output terminal member and said at least one input terminal member, so that said upper contact surface of said at least one terminal block is externally exposed.

2. A power module according to claim 1, wherein said at least one input terminal member is arranged on said base member so as to result in an input terminal loop inductance that is less than 5 nH (nano Henry) during operation.

3. A power module according to any one of the preceding claims, further comprising a heat sink member coupled to a second planar surface of said base member.

4. A power module according to claim 3, wherein said at least one terminal block is operably coupled to said heat sink member via at least one thermally conductive connection through said base member.

5. A power module according to any one of the preceding claims, wherein said at least one input terminal member comprises a first terminal block, having at least one first bottom contact surface operably coupled to said interface surface of said at leastone semiconductor element, and a first upper contact surface operably coupleable with a first external input conductor, and a second terminal block, having a second bottom contact surface operably coupled to said first planar surface of said base member, and a second upper contact surface operably coupleable with a second external input conductor.

6. A power module according to claim 5, wherein each one of said first and second upper contact surface is externally exposed through said encapsulant.

7. A power module according to claim 6, wherein said first and second upper contact surfaces are spaced apart from said first planar surface of said base member at a respective first and second distance in a direction normal to said first planar surface of said base member.

8. A power module according to claim 7, wherein said first distance is equal to said second distance.

9. A power module according to claim 7, wherein said first distance is greater than said second distance.

10. A power module according to any one of the preceding claims, wherein said at least one output terminal member and said at least one input terminal member are axially aligned with a longitudinal axis of said base member.

11. A power module according to any one of the preceding claims, wherein said base member comprises at least one first electrically conducting layer bonded to a surface of a dielectric layer.

12. A power module according to claim 11, wherein said first electrically conducting layer is a Cu sheet [layer] formed into a predetermined circuit pattern, and wherein said dielectric layer is a ceramic tile.

13. A power module according to any one of the preceding claims, wherein said first end portion of said output terminal comprises an aperture configured to operably receive an external coreless current sensor.

14. A power module according to claim 13, wherein said encapsulant comprises a recess formed through said aperture and configured to operably position said external coreless current sensor within said aperture.

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