Substrate processing apparatus and method

Abstract

To provide a substrate processing apparatus and method that improve the maintenance of an apparatus.SOLUTION: A substrate processing apparatus (100) includes a reaction chamber (50), an outer chamber (80) at least partially enclosing a reaction chamber and forming an intermediate volume (70) therebetween, and a substrate support (40) arranged in the reaction chamber, and the substrate support has a hollow interior space (42) with fluid communication between the hollow interior space and the intermediate volume (70) through channels (45).SELECTED DRAWING: Figure 2

Description

Technical Field

[0006]

[0001] The present invention generally relates to a substrate processing apparatus and method. More particularly, the present invention relates to a chemical vapor deposition reactor or an etching reactor, but is not limited thereto. Background of the Invention

[0002] This section describes useful background information, but note that it is not admitted that the techniques described herein represent the state of the art.

[0003] In a chemical vapor deposition reactor or an etching reactor, the substrate to be processed is supported by a substrate support. The substrate support usually requires wiring and tubes. However, the positions of the wiring and tubes within the apparatus are in locations that are difficult to access for cleaning and normal maintenance, which has an adverse effect on the downtime for maintenance. Summary

[0004] An object of certain embodiments of the present invention is to provide a substrate processing apparatus and method for improving the maintenance of the apparatus, or at least to provide an alternative solution to the existing technology.

[0005] According to a further exemplary aspect of the present invention, the following substrate processing apparatus is provided. The apparatus includes a reaction chamber; an outer chamber that at least partially surrounds the reaction chamber and forms an intermediate volume therebetween; a substrate support located within the reaction chamber and having a hollow internal space; and is provided with a channel extending from the hollow internal space to the intermediate volume so that fluid can flow between the hollow internal space and the intermediate volume.

[0006] In some embodiments, in the substrate processing stage of the apparatus, the intermediate volume and the hollow internal space of the substrate support form a common pressure space through the channel. In some embodiments, the number of channels is two or more, for example, three.

[0007] In some embodiments, the channel passes through a feedthrough within the reaction chamber wall. In some embodiments, the substrate support portion has a projection that accommodates the channel extending from the hollow internal space to the feedthrough within the reaction chamber wall.

[0008] In some embodiments, the internal space of the reaction chamber surrounds the channel.

[0009] In some embodiments, the intermediate volume is separated (or isolated) from the substrate processing space of the reaction chamber during the substrate processing stage.

[0010] In some embodiments, the hollow internal space is under the same pressure as the intermediate volume and the channel that forms a fluid connection between the hollow internal space and the intermediate volume. In some embodiments, the channel is surrounded by a region having the same pressure as the reaction chamber. In some embodiments, during substrate processing, the reaction chamber has a lower pressure than the pressure in the intermediate space.

[0011] In some embodiments, the substrate support portion is detachably attached or has a detachable substrate table.

[0012] In some embodiments, the substrate support portion has wiring that extends from the hollow internal space of the substrate support portion through the channel into the intermediate volume, and further extends from there to the outside of the outer chamber.

[0013] In some embodiments, the channel accommodates wiring, and the wiring extends from the substrate support to the intermediate volume within the channel.

[0014] In some embodiments, the wiring extends further from the intermediate volume to the outside of the outer chamber.

[0015] In some embodiments, the substrate support comprises a substrate table and a base (or bottom cover). In some embodiments, the base has one or more base legs that support the base relative to the support structure (for example, relative to the reaction chamber). In some embodiments, one base leg provides the channel. (If two or more (or each) base leg has a channel, multiple channels are provided.)

[0016] In some embodiments, the wiring exits the outer chamber through at least one feedthrough at the bottom of the outer chamber.

[0017] In some embodiments, at least one feedthrough section is detachably attached to or detachable from the bottom flange of the outer chamber. In some embodiments, at least one feedthrough section is detachably attached to or detachable from a connecting flange attached to the reaction chamber assembly.

[0018] In some embodiments, at least one feedthrough portion is detachably attached to or detachable from the flange of the assembly, which includes at least the lower part of the reaction chamber and the substrate support portion.

[0019] In some embodiments, the at least one feedthrough portion is detachably attached to the bottom flange of the intermediate volume by at least one fastener that is removable from the top or bottom. In some embodiments, the at least one feedthrough portion is a vacuum flange. The outer diameter of the vacuum flange is smaller than the inner diameter of the channel.

[0020] In some embodiments, the connecting flange is detachably attached to or detachable from the bottom flange of the outer chamber.

[0021] In some embodiments, the connecting flange of the intermediate volume is detachably attached to or detachably attached to the bottom flange of the outer chamber by at least one fastener that is removable from the top or bottom.

[0022] In some embodiments, the apparatus includes a reaction chamber exhaust line that starts from the bottom of the reaction chamber bowl. In some embodiments, the exhaust line exits the outer chamber through the bottom of the outer chamber.

[0023] In some embodiments, the exhaust line is located symmetrically beneath the reaction chamber, around the rotational symmetry axis of the reaction chamber. In some embodiments, the exhaust line runs through the center of the outer chamber through the bottom flange. (Also, it runs through the center through an (optional) connecting flange.)

[0024] In some embodiments, the apparatus includes an actuator configured to raise and lower the reaction chamber. Furthermore, the reaction chamber exhaust line includes a tubular portion or tube extending longitudinally (vertically) that allows for vertical movement.

[0025] In some embodiments, the ability to move in the vertical direction is achieved by enabling the vertical expansion and contraction of the exhaust line.

[0026] In some embodiments, the device includes wiring (a bundle of electrical wiring) wound around the longitudinally extending tubular portion.

[0027] In some embodiments, the apparatus is configured to adjust the vertical position of the substrate support by extending the length of the channel. The substrate support consists of an upper part or a substrate table and a base (bottom or bottom cover) below the substrate table. In some embodiments, the base has legs that form the channel. In some embodiments, there is at least one leg. In some embodiments, there are at least two legs. In some embodiments, there are three or more legs. In some embodiments, the legs are positioned symmetrically.

[0028] In some embodiments, the apparatus includes an actuator configured to move up and down the height of a substrate table formed by a substrate support portion by changing the longitudinal dimension of a longitudinal extension portion that forms a part of the channel. Accordingly, in some embodiments, the apparatus includes an actuator configured to adjust the length of the pedestal leg. In some embodiments, the longitudinal (or vertical) extension portion forming the channel (or the pedestal leg) is mounted by a bellows (or a vacuum bellows) or nested sub-parts. For example, it is mounted by two or more tubular parts of different diameters nested and capable of moving vertically relative to each other inside. In this way, the contracted shape and the extended shape of the longitudinal extension portion are realized, enabling the vertical position of the substrate support portion (or the support table) to be changed.

[0029] In some embodiments, the apparatus includes an antenna for plasma formation above the substrate support portion in the reaction chamber. In some embodiments, the antenna is a radiation transmitting antenna of a plasma applicator. In some embodiments, the radiation transmitting antenna is located in a hollow internal space provided by the reaction chamber. In some embodiments, both the antenna and the substrate support portion are located in the same hollow internal space. Or, both the antenna and the substrate to be processed are configured to be located in the same space.

[0030] Depending on the embodiment, the device includes a precursor pipe for discharging the non-plasma gas at a point downstream of the antenna. The precursor pipe extends into the space between the plurality of antennas and also into the reaction chamber. Depending on the embodiment, the device further includes a plasma gas inlet. The plasma gas inlet provides a flow of plasma gas that flows from above the plurality of antennas, through the space between these antennas, and then below these antennas. The antenna may be located within a cover tube. During plasma processing, plasma is ignited when the plasma gas passes through the antenna. The formed plasma species descend toward (i.e., toward) the substrate support.

[0031] According to a second exemplary aspect of the present invention, a substrate processing apparatus as follows is provided. This apparatus includes a reaction chamber; an outer chamber that at least partially surrounds the reaction chamber and forms an intermediate volume therebetween; a substrate support within the reaction chamber; the substrate support is fixed to the wall of the reaction chamber and is vertically movable together with the reaction chamber by the expansion and contraction of an exhaust line connected to the bottom of the reaction chamber.

[0032] According to a third exemplary aspect of the present invention, a method for disassembling a substrate processing apparatus is provided. This substrate processing apparatus includes a reaction chamber, an outer chamber that at least partially surrounds the reaction chamber and forms an intermediate volume therebetween, and a substrate support within the reaction chamber. The method includes removing a reaction chamber assembly including the substrate support and the lower part of the reaction chamber from the bottom structure of the outer chamber; moving wiring suspended from the substrate support and plugs of the wiring from the outside of the outer chamber into the intermediate volume through openings provided in the bottom structure; lifting and removing the reaction chamber assembly together with the wiring and the plugs of the wiring for maintenance; including.

[0033] In some embodiments, the bottom structure includes the bottom flange of the outer chamber. In some embodiments, the removal is performed by removing the fasteners from the environmental pressure side of the bottom structure.

[0034] In some embodiments, the terms "wiring" and "plug" also apply to the tubing for the fluid and the connector for the fluid, in addition to the electrical wiring and its plug.

[0035] In some embodiments, removing the reaction chamber assembly includes removing the connecting flange of the reaction chamber assembly from the bottom structure of the outer chamber.

[0036] In some embodiments, the connecting flange is attached to an exhaust line extending downward from the reaction chamber bowl. In some embodiments, the exhaust line has a tubular portion and a fixed portion. The tubular portion is a flexible portion and / or a longitudinally expandable portion. The fixed portion is located below the tubular portion. In some embodiments, the connecting flange is attached to the fixed portion of the exhaust line.

[0037] In some embodiments, removing the connecting flange includes removing the seal feedthrough portion that seals the opening provided in the bottom structure from the bottom structure.

[0038] While various interpretations and embodiments have been presented, these are not intended to limit the scope of the invention. The embodiments described above are merely used to illustrate specific aspects and steps that may be used in carrying out the invention. Some embodiments may be presented only by reference to specific exemplary aspects. It should be understood that some embodiments are applicable to other embodiments. In particular, embodiments described in relation to the first interpretation are applicable to other interpretations, and vice versa. The above embodiments can be combined as appropriate. [Brief explanation of the drawing]

[0039] The present invention will be described below using examples with reference to the attached drawings. [Figure 1] This is a substantially cross-sectional view of a substrate processing apparatus according to one embodiment during the substrate processing stage. [Figure 2] This is a substantially cross-sectional view of the substrate processing apparatus shown in Figure 1, according to one embodiment, during the substrate loading stage. [Figure 3] This is another approximate cross-sectional view of the substrate processing apparatus shown in Figure 1, according to one embodiment, during the substrate processing stage. [Figure 4] Some details of a device according to one embodiment are shown. [Figure 5] Another embodiment of the substrate processing apparatus is shown, which has wiring wound around the exhaust passage. [Figure 6] This is a cross-sectional view of a substrate processing apparatus according to one embodiment, which includes a plasma source. [Figure 7] Another embodiment of a substrate processing apparatus equipped with an adjustable substrate holder is shown. The base legs are in the retracted position. [Figure 8] Figure 7 shows the substrate processing apparatus with the base legs extended. [Figure 9] A flowchart illustrating a method for disassembling a circuit board processing unit for maintenance, according to one embodiment, is shown. [Figure 10] A flowchart illustrating another method for disassembling a circuit board processing unit for maintenance, according to a different embodiment, is shown. Detailed description

[0040] In the following explanation, atomic layer deposition (ALD) and atomic layer etching (ALE) techniques will be used as examples.

[0041] The basics of the ALD growth mechanism are known to those skilled in the art. ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor species into at least one substrate. The basic ALD deposition cycle consists of four sequential steps: pulse A, purge A, pulse B, and purge B. Pulse A consists of the first precursor vapor, and pulse B consists of another precursor vapor. In purges A and B, an inert gas and a vacuum pump are used to purge (remove) gaseous reaction byproducts and residual reactant molecules from the reaction space. The deposition sequence consists of at least one deposition cycle. The deposition sequence is structured so that the deposition cycle is repeated until a thin film or coating of the desired thickness is produced. The deposition cycle can be simple or more complex. For example, the deposition cycle may include three or more reactant vapor pulses separated by purge steps. Also, some of the purge steps may be omitted. In plasma-assisted Atomic Layer Deposition (ALD), such as PEALD (Plasma-Enhanced Atomic Layer Deposition), and photon-assisted ALD (Photon-Assisted ALD), one or more deposition steps are assisted by providing additional energy required for surface reactions through plasma supply. Alternatively, one or more reaction precursors can be replaced by energy, leading to a single-precursor ALD process. Therefore, pulse and purge sequences can vary depending on the individual case. These deposition cycles form a temporal deposition sequence controlled by a logic unit or microprocessor. Thin films grown by ALD are dense, pinhole-free, and have a uniform thickness.

[0042] Regarding the substrate processing process, typically at least one substrate is exposed to a series of temporally spaced precursor pulses within a reactor (or reaction chamber). This causes material to be deposited on the substrate surface by a continuous self-saturating surface reaction. In this application, the term ALD includes all applicable ALD-based technologies and all equivalent or closely related technologies, such as the following subtypes of ALD: MLD (Molecular Layer Deposition), plasma-assisted ALD such as PEALD (Plasma Enhanced Atomic Layer Deposition), photon-assisted ALD (also known as flash-enhanced ALD or photo-ALD), or photon-enhanced ALD.

[0043] However, the present invention is not limited to ALD technology. The present invention can be widely applied to various substrate processing equipment, and can be used, for example, in etching equipment such as chemical vapor deposition (CVD) reactors and atomic layer etching (ALE) reactors.

[0044] The basics of the ALE etching mechanism are known to those skilled in the art. In ALE, a material layer is removed from a surface using a self-limiting series of reaction steps. A typical ALE etching cycle has a modification step that forms a reaction layer and a removal step that removes only the reaction layer. The removal step uses a plasma species (especially ions) to remove the layer. The source of the plasma species can vary. A plasma applicator that provides the plasma source over as large an area as possible is preferred. The plasma applicator may include, for example, a plasma array, a hollow cathode, or a microwave plasma.

[0045] In relation to ALD and ALE technologies, self-limiting surface reaction means that when the surface reaction field is completely exhausted, the surface reaction in the surface reaction layer stops and self-saturates.

[0046] Figure 1 is a substantially cross-sectional view of a substrate processing apparatus 100 according to one embodiment during the substrate loading stage. The substrate processing apparatus 100 may be, for example, an ALD reactor or an ALE reactor. The apparatus 100 comprises a reaction chamber 50 and an outer chamber 80 (or vacuum chamber) that at least partially surrounds the reaction chamber 50. An intermediate volume 70 (or intermediate space) is formed between the reaction chamber 50 and the outer chamber 80. In some embodiments, the intermediate volume 70 is formed outside the reaction chamber 50 within the outer chamber 80. Thus, the intermediate volume 70 is defined by the outer chamber wall and the reaction chamber wall and formed between them.

[0047] The apparatus 100 further includes a substrate support section 40 within the reaction chamber 50. The substrate support section 40 includes a hollow internal space 42. In some embodiments, a substrate table 48 (or wafer table) forms the upper part of the substrate support section 40. The substrate support section 40 further has a bottom or base 49 below the substrate table 48. The substrate support section 40 may have one, two, three or more base legs around the base of a rounded bowl. In some embodiments, three base legs are provided on the rounded bowl, equidistant from each other. In some embodiments, a hollow internal space 42 is formed between the substrate table 48 and the base 49. In some embodiments, the hollow internal space 42 is located below the substrate table 48.

[0048] The reaction chamber 50 includes a gas processing space. The gas processing space is a space within the reaction chamber 50 through which process gas flows during the substrate processing stage. (During this time, the substrate is placed on the substrate table 48.) In some embodiments, the hollow internal space 42 is isolated from the gas processing space. The base 49 includes a channel 45 connecting the hollow internal space 42 to the intermediate volume 70. This allows fluid to flow between spaces 42 and 70. In some embodiments, the channel 45 is surrounded by the gas processing space of the reaction chamber 50. However, during substrate processing, fluid cannot flow from the channel 45 to the gas processing space. In some embodiments, space 42 extends along the channel 45 to the wall of the reaction chamber and further connects to the intermediate volume 70. Therefore, in some embodiments, the intermediate volume 70 is connected from inside the reaction chamber 50 to space 42. However, it is isolated from the gas processing space of the reaction chamber 50. In some embodiments, the intermediate volume 70, the channel 45, and the space 42 are connected to each other by fluid, i.e., form a continuous space and share a common (i.e., the same or at least similar) pressure. In some embodiments, the channel 45 is substantially oriented longitudinally. In some embodiments, the apparatus has multiple channels 45, for example, three channels 45. In some embodiments, the channel 45 is mounted on a base leg. In some embodiments, the base leg connects the base 49 to the reaction chamber wall.

[0049] Space 42 houses various wirings 43 required by the substrate table 48. For example, it houses electrical cables, wiring for heaters and sensors. In this specification, the term “wiring” may also refer to tubing for gases and / or liquids such as protective gases and optional coolants, and space 42 may house such tubing wirings 43. These wirings 43 are guided from space 42 to the intermediate volume 70 by channels 45. The walls of the outer chamber 80 can withstand different pressures inside and outside the walls. For example, they can withstand a situation where one side is under vacuum pressure and the other is under atmospheric pressure. In some embodiments, during substrate processing, the intermediate volume 70 is under vacuum, and the space outside the outer chamber 80 is under (higher) atmospheric pressure or room pressure.

[0050] The apparatus 100 includes at least one feedthrough section 44. The feedthrough section 44 guides the wiring 43 from the substrate table 48 through the intermediate volume 70 to the outside of the outer chamber 80. In some embodiments, the feedthrough section 44 is attached to the wall structure of the outer chamber 80 (preferably the bottom structure of the outer chamber 80). In some embodiments, the wall structure is the bottom flange 89 of the outer chamber 80. In some embodiments, a further flange is provided at the bottom of the intermediate volume 70. Hereafter, this flange will be referred to as the connecting flange 88. In some embodiments, the flanges 88 and 89 overlap and are connected to or can be connected to each other. In some embodiments, the flanges 88 and 89 are connected to or can be connected to each other, for example by a fastener 47. In some embodiments, the feedthrough section 44 passes through these flanges 88 and 89.

[0051] In some embodiments, at least one feedthrough portion 44 is coupled only to the flange 88.

[0052] In some embodiments, as shown in Figure 1, the structure of the outer chamber 80 is substantially constricted toward a central neck. This neck forms a tubular space (or tubular portion) 55 extending toward a bottom flange 89. The tubular space 55 contains an exhaust line or foreline 30. The exhaust line or foreline 30 extends from the reaction chamber 50 through the bottom flange 89 (and connecting flange 88) to a vacuum pump (not shown).

[0053] In some embodiments, a portion of the exhaust line 30 is formed as a longitudinally extending (tubular) section 35. The section 35 has a contracted shape and (at least one) extended shape. These shapes allow substantially longitudinal movement relative to the reaction chamber 50 located above the exhaust line 30. The reaction chamber 50 may be a bowl-shaped component, or it may be another (e.g., cylindrical) component with rotational symmetry.

[0054] In some embodiments, portion 35 may be mounted by a vacuum bellows. In some embodiments, portion 35 is mounted by nested subparts. For example, two or more tubular parts of different diameters are nested together so that they can move differently in the longitudinal direction inside, thereby achieving contracted and expanded shapes.

[0055] In some embodiments, the connecting flange 88 is attached to the reaction chamber 50. In some embodiments, this is achieved by a connecting flange 88 fixed to the exhaust line 30.

[0056] The bottom flange 89 of the outer chamber 80 may rest on or be fixed to the main portion of the outer chamber 80. In some embodiments, the bottom flange 89 may be fixed to the main portion of the outer chamber 80 at a mounting point or mounting area 81. In some embodiments, the mounting point or mounting area 81 may be provided by a further flange (for example, located at the bottom end of the main portion). In some embodiments, the mounting point or mounting area 81 is provided to avoid space or portion 55.

[0057] In some embodiments, the apparatus includes an actuator 53. The actuator 53 has a force transmission element (or force transmission rod) 51 that extends through an outer chamber feedthrough 52. The force transmission element (or force transmission rod) 51 is attached to the reaction chamber 50 (at its end or outer wall).

[0058] In Figure 1, the reaction chamber 50 is in contact with the upper corresponding portion (or corresponding surface) 20. The corresponding portion (or corresponding surface) 20 may be, for example, a lid system or a side wall. This is to seal the inside of the reaction chamber 50 from the intermediate volume 70 during substrate processing. At least one substrate may be positioned on or in the substrate table 48 for processing. The substrate is not shown. This processing may be, for example, ALD or ALE performed under vacuum.

[0059] Figure 2 shows that the reaction chamber 50 can be moved from a first state for substrate processing to a second state for substrate loading. This movement is made possible by an actuator 53 and also within the limits that the exhaust line 30 can be retracted for part 35. When the reaction chamber 50 is in the second state, a loading gap is formed between the corresponding part 20 movable reaction chamber 50 and the movable reaction chamber 50. One or more substrates are inserted through this gap (before processing) and placed on the substrate table 48, and after processing is complete, the substrates are removed from the substrate table 48 and taken out through the gap. The substrate processing mode of the reaction chamber 50 may be restarted by raising the movable part of the reaction chamber 50 from the second state to the first state. In some embodiments, the wiring 43 in the longitudinally extending portion is arranged in a helical manner to facilitate the longitudinal movement of the movable reaction chamber 50.

[0060] The feedthrough section 44 is a feedthrough for the wiring 43 and is provided as a feedthrough for sealing the vacuum pressure region from the atmospheric pressure region. In some embodiments, the feedthrough section 44 is mounted by a vacuum flange, for example, by a KF16 vacuum flange. The wiring 43 is attached to the feedthrough section 44 by, for example, brazing. The term "wiring" may refer to sheathed wire or sheathed cable (preferably having a metal sheath), or it may refer to a tubular tube.

[0061] In some embodiments, multiple feedthrough sections 44 are attached to the wall structure (or bottom structure) of the outer chamber 80. For example, at least three feedthrough sections 44 are attached. In some embodiments, each feedthrough section 44 (for example, each of the three feedthrough sections 44) is a feedthrough for multiple wires or tubes. In some embodiments, the bottom structure has one feedthrough section 44 for each base leg.

[0062] In some embodiments, the feedthrough section (or at least one feedthrough section) 44 is detachably attached to the wall structure (or bottom structure) by fasteners. These fasteners can be removed from outside the vacuum (e.g., from the atmospheric pressure side of the wall structure), or in some embodiments, from the vacuum side. In such embodiments, at least one feedthrough section 44 is detachably attached to the flange 88 by at least one fastener that can be removed from below or above. In some embodiments, the size of at least one feedthrough section 44 is too small to fit into the channel 45. For this reason, the substrate table 48 can be separated from the rest of the substrate support section 40 (from the bottom cover or base 49), the substrate table 48 can be lifted upward (with at least one feedthrough section 44 passing through the channel 45 and suspended from the wiring 43), and the substrate table 48 can be removed from the apparatus (for maintenance) (e.g., through a loading gap). Outside the outer chamber 80 (outside the vacuum), the wiring 43 in one embodiment has an electrical plug and / or (quick) connector 74 for easy disassembly. Here, the connector 74 may be a connector for a gas or liquid pipe.

[0063] Furthermore, in some embodiments, the horizontal size of the bottom flange 88 is smaller than the horizontal size of the tubular space or portion 55. The bottom flange 88, which is fixed by fasteners that can be removed from outside the vacuum (below the outer chamber 80) or from above the outer chamber 80, can therefore be removed in some embodiments by removing the fasteners. Thus, the entire package, including the reaction chamber (bowl) 50, the substrate table 48 and the substrate support 40 attached to the reaction chamber (bowl) 50, the bottom flange 88, one or more feedthrough portions 44 and associated wiring 43, and the exhaust line up to portion 35 (or, in some embodiments, the exhaust line including portion 35), can be lifted upward.

[0064] In this way, the entire package can be removed from the device 100 from the top for maintenance. The part to be removed is indicated by line 11 in Figure 2.

[0065] Figure 3 is another approximate cross-sectional view of the substrate processing apparatus of Figure 100 according to one embodiment, during the substrate processing stage.

[0066] Figure 4 shows some details of the apparatus 100 according to one embodiment. More specifically, Figure 4 shows one method of installing the feedthrough section 44 within the wall structure of the outer chamber 80.

[0067] The portion 44 is pressed against the connecting flange 88 by a fixing element 91. The fixing element 91 is secured by a fastener 92 located in a (screw) hole that penetrates into the flange 88. In some embodiments, another fastener 47 penetrates the flange 89 and enters the flange 88. The fastener 47 may be detached from the outside of the outer chamber 80, thereby allowing the package, including the reaction chamber 50 and the substrate support 40, to be removed from the apparatus 100 for maintenance.

[0068] In some embodiments, as described above, flange 89 is attached to the outer chamber 80, while flange 88 is attached to the substrate bowl / wafer table package. Component 44 is connected to this package. Component 44 and 88 are connected from the inside (of the intermediate space 70) by fasteners (or bolts) 92. Component 88 and 89 are also connected from the outside (of the outer chamber 80) by fasteners (or bolts) 47.

[0069] In some embodiments, the fastener 92 penetrates the flange 88 and enters the flange 89. In such embodiments, the fastener 47 may be omitted.

[0070] In some embodiments, the wiring 43 is helical on the vacuum side of flanges 88 and 89. This is to facilitate the vertical movement of the vacuum chamber 50. This example is shown in Figure 5. Figure 5 depicts the wiring 43 being wound around a longitudinally extending tubular portion 35. In some embodiments, the wiring is attached to the base 49 by a mounting portion 64.

[0071] In some embodiments, as shown in Figure 6, the apparatus 100 includes an antenna 61 for plasma formation above the substrate support 40 within the reaction chamber 50. In some embodiments, the antenna 61 is a radiation transmitting antenna for the plasma applicator. In some embodiments, both the antenna 61 and the substrate support 40 are located in the same space. Alternatively, the antenna 61 and the substrate to be processed are configured to be located in the same space.

[0072] In some embodiments, the apparatus 100 includes a precursor pipe 62 for discharging a non-plasma gas at a point downstream of the antenna 61. The precursor pipe 62 extends into the space between the multiple antennas 61 and also extends into the reaction chamber 50. In some embodiments, the apparatus 100 further includes a plasma gas inlet. The plasma gas inlet provides a flow of plasma gas that flows from above the multiple antennas 61, through between these antennas, and below these antennas. The antennas 61 may be located within cover tubes. During plasma processing, the plasma is ignited as the plasma gas passes through the antennas 61. The formed plasma species descends toward the substrate support 40 (i.e., toward the substrate).

[0073] In some embodiments, the plasma applicator having the antenna 61 is mounted on the upper corresponding portion or corresponding surface 20. Here, the corresponding portion may be a lid or lid system, and in some embodiments, it may be a common lid or lid system for the reaction chamber 50 and the outer chamber 80. In some embodiments, the lid or lid system is movable. The dashed line 12 in Figure 6 indicates the height at which the lid or lid system can be opened in one embodiment.

[0074] Depending on the embodiment, the source of the plasma species can vary. A plasma applicator that provides a plasma source over as large an area as possible is preferred. The plasma applicator may include, for example, a plasma array (as shown in Figure 6), a hollow cathode, or microwave plasma.

[0075] In some embodiments, the apparatus 100 is configured to adjust the longitudinal position of the substrate support 40, or, in particular, to adjust the longitudinal position of the substrate table 48 within the reaction chamber 50 regardless of the movement of the reaction chamber 50. For this purpose, the apparatus 100 includes an actuator configured to change the length of the legs of the base 49. The actuator is configured to lengthen or shorten the legs of the base 49, including the channel 45. In some embodiments, as shown in Figure 7, the longitudinal extension 83 forms part of the channel 45. The longitudinal (or vertical) extension forming the channel (or base leg) 45 is implemented by, for example, a bellows (or vacuum bellows) or nested subparts. For example, it is implemented by two or more nested tubular parts of different diameters that are able to move longitudinally relative to each other internally. In some embodiments, a force transmission element (or force transmission rod) is extended from the lifting machine through the outer chamber feedthrough and attached to a suitable location on the substrate support 40 (e.g., the base 49, base leg, or direct portion 83). Figures 7 and 8 depict two alternative lifters 73 and 73', each positioned differently. The force transmission element 71 of lifter 73 passes through flanges 88 and 89, while the force transmission element 71' of lifter 73' passes through another feedthrough in the wall of the outer chamber 80. In either case, the contracted and extended shapes of the longitudinal extension 83 are realized, allowing the longitudinal position of the substrate support 40 (or support table 48) to be changed, and enabling the meeting of different plasma-type requirements for the optimal distance from the substrate surface. Figure 7 shows the section 83 in the contracted shape, and Figure 8 shows one of the extended shapes of the section 83.

[0076] Figure 9 shows a flowchart illustrating a method for disassembling the substrate processing apparatus 100 for maintenance, according to one embodiment.

[0077] In step 901, the reaction chamber assembly, including the substrate support 40, is removed from the bottom structure 89 of the outer chamber 80. In some embodiments, this step also includes removing the feedthrough section 44 from the bottom structure 89. In some embodiments, this removal step is implemented by removing the fasteners 47 from the outside of the outer chamber 80.

[0078] In step 902, the wiring 43 (and their plugs) (which have been removed from the outside of the outer 80) are moved through the bottom structure 89 into the reaction chamber side of the bottom structure through the opening of the bottom structure 89.

[0079] In step 903, the reaction chamber assembly and the wiring 43 (and the plug of the wiring 43) suspended from the reaction chamber assembly are lifted and taken away or removed from the apparatus 100 for maintenance.

[0080] Figure 10 shows a flowchart of another method for disassembling the substrate processing apparatus for maintenance, according to another embodiment. In this embodiment, only the substrate table 48 is removed from the apparatus.

[0081] In step 1001, the feedthrough section 44 is removed from the bottom structure 89. In some embodiments, this removal step is carried out by removing a fastener 47 from the outside of the outer chamber 80. In some embodiments, the feedthrough section 44 is also removed from the connecting flange 88. In some embodiments, removal from the connecting flange 88 is achieved by removing a corresponding fastener (e.g., fastener 92). In some embodiments, the fastener 92 is removed from the vacuum chamber side of the bottom structure 89.

[0082] In step 1002, the wiring 43 (and their plugs) (which have been removed from the outside of the outer 80) are moved through the bottom structure 89 into the reaction chamber side of the bottom structure 89 via the opening of the bottom structure 89.

[0083] In steps 1003 and 1004, the wiring 43 and the plug and feedthrough section 44 of the wiring 43 are moved through the channel 45 in the legs of the base 49, and the circuit board table 48 is lifted together with the wiring 43 and the plug and feedthrough section 44 of the wiring 43 that are suspended from the circuit board table 48 and removed from the apparatus 100 for maintenance. In some embodiments, step 1004 includes removing the circuit board table 48 from the base 49 by lifting it. In some embodiments, prior to step 1004, the associated fasteners are removed.

[0084] The following are the technical effects of one or more embodiments disclosed herein. However, these effects are not intended to limit the technical scope and interpretation of the claimed invention. One technical effect is to provide a means for guiding wiring out of the vacuum. Another technical effect is to reduce the need to clean the wiring. Another technical effect is to improve service by making it possible to remove the reactor portion (e.g., the reaction chamber package including the reaction chamber bowl, bellows and wafer table) from the apparatus (particularly through a lid located on top of the apparatus). Another technical effect is to make the distance between the plasma antenna and the substrate surface adjustable by substrate holder pedestal legs whose height is adjustable independently of the reaction chamber.

[0085] The above description provides a complete and useful explanation of the best mode for carrying out the present invention as currently envisioned by the inventors, using specific implementations and non-limiting embodiments of the present invention. However, as will be apparent to those skilled in the art, the details of the embodiments described above are not limiting to the present invention and can be implemented in other embodiments using equivalent means without departing from the features of the present invention.

[0086] Furthermore, the features of the embodiments of the present invention disclosed above may be used without the use of other corresponding features. However, the above description should be understood as merely an example to illustrate the principles of the present invention and not as a limiting reference. The scope of the present invention is limited only by the appended claims.

Claims

1. A reaction chamber; an outer chamber at least partially surrounding the reaction chamber and defining an intermediate volume between the outer chamber and the reaction chamber; a substrate support within the reaction chamber; Equipped with the substrate support is fixed to a wall of the reaction chamber, and the substrate support is movable in the vertical direction together with the reaction chamber by extending and retracting an exhaust line connected to a bottom of the reaction chamber; At least one feedthrough portion is removably attached to a connection flange attached to an assembly including at least a lower portion of the reaction chamber and the substrate support portion; Substrate processing equipment.

2. The substrate processing apparatus according to claim 1 , wherein the exhaust line has a flexible tubular portion and a stationary portion located below the tubular portion.

3. The substrate processing apparatus according to claim 1 , wherein the exhaust line has a portion that is extendable in a longitudinal direction and a stationary portion located below the extendable portion.

4. The substrate processing apparatus of claim 3 , wherein the exhaust line further comprises a flexible tubular portion.

5. The substrate processing apparatus of claim 2 , wherein the exhaust line comprises a vacuum bellows.

6. 6. The substrate processing apparatus of claim 1, wherein the substrate support has a hollow internal space, and the internal space and the intermediate volume are configured to allow fluid communication through a channel connecting the internal space to the intermediate volume.

7. The substrate processing apparatus of claim 6 , wherein the channel accommodates wiring disposed therein from the substrate support to the intermediate volume.

8. The substrate processing apparatus of claim 7 , wherein the wiring exits the outer chamber through at least one feedthrough in a bottom of the outer chamber.

9. The substrate processing apparatus of claim 1 , wherein the connection flange is removably attached to a bottom flange of the outer chamber.

10. The substrate processing apparatus of claim 1 or 9, wherein the exhaust line has a flexible and / or longitudinally extendable tubular portion and a stationary portion located below the tubular portion, and the connection flange is attached to the stationary portion.

11. an actuator configured to raise and lower the reaction chamber; a longitudinally extending tubular section in the reaction chamber exhaust line that allows for longitudinal movement; The substrate processing apparatus according to claim 1 , further comprising:

12. The substrate processing apparatus of claim 11 , further comprising wiring wound around the longitudinally extending tubular portion.

13. The substrate processing apparatus of claim 6 configured to adjust a vertical position of the substrate support by increasing a length of the channel.

14. 14. An apparatus according to claim 13, comprising an actuator arranged to raise or lower a height of a substrate table constituted by a substrate support by varying a longitudinal dimension of a longitudinal extension forming part of the channel.

15. The substrate processing apparatus according to claim 1 , further comprising a plurality of antennas for plasma generation, the antennas being disposed above the substrate support within the reaction chamber.

16. 16. The substrate processing apparatus of claim 15, comprising a precursor pipe for discharging a non-plasma gas at a point downstream of the plurality of antennas, the precursor pipe being located in a space between the plurality of antennas and located within the reaction chamber.

17. 1. A method for disassembling a substrate processing apparatus, comprising: The substrate processing apparatus includes a reaction chamber, an outer chamber at least partially surrounding the reaction chamber and defining an intermediate volume between the reaction chamber and an outer chamber, and a substrate support within the reaction chamber, the method comprising: removing a reaction chamber assembly including the substrate support and a lower portion of the reaction chamber from a bottom structure of the outer chamber; moving wires suspended from the substrate support and plugs of the wires from outside the outer chamber into the intermediate volume through openings in the bottom structure; lifting and removing the reaction chamber assembly together with the wiring and its plugs for maintenance; Including, removing the reaction chamber assembly includes removing a connection flange of the reaction chamber assembly from the bottom structure of the outer chamber; Removing the connection flange includes removing a seal feed-through portion from the bottom structure, the seal feed-through portion sealing the opening provided in the bottom structure. method.

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