Surface-modified silica particles and compositions containing such particles

Abstract

The present invention relates to surface-modified silica particles comprising alkoxyorganosilanes, to compositions comprising such particles, and to the use of such surface-modified silica particles and compositions comprising such particles.

Description

[Technical Field]

[0001] Technical field The present invention relates to surface-modified silica particles containing alkoxyorganosilanes, and compositions containing such particles, as well as to the use of such surface-modified silica particles and compositions containing such particles.

[0002] background Modern semiconductor devices, memory devices, integrated circuits, etc., include alternating layers of conductive, semiconductive, and dielectric (or insulating) layers, where the dielectric layers insulate the conductive layers from each other. Connections between conductive layers may be established, for example, by metal biases. In manufacturing, such conductive, semiconductive, and / or dielectric materials are continuously deposited and partially removed again from the surface of the semiconductor wafer.

[0003] As such devices gradually become smaller, the accuracy of deposition and the varying thicknesses of the layers become even more important to ensure that the manufactured devices perform as expected. Therefore, having a flat surface is crucial, upon which subsequent layers are deposited. When the required flatness cannot be achieved by deposition, the wafer (each manufactured device) needs to be planarized by partially or, in some cases, all of such layers being removed.

[0004] Chemical mechanical polishing (CMP) is a widely used method in the manufacturing process of semiconductor devices and the like to flatten or remove parts or all of a layer. In the CMP process, abrasive particles and / or corrosive chemical slurries, such as silica particle slurries, are used together with a polishing pad. The pad and the substrate or surface, such as a wafer, are pressed together and rotated generally non-concentrically, i.e., around different axes of rotation, thereby scraping and removing material from the surface or substrate.

[0005] CMP may be used to polish a wide range of materials, such as metals or metal alloys (e.g., aluminum, copper, or tungsten), metal oxides, silicon dioxide, or even polymer materials. For each material, the polishing slurry needs to be formulated to specifically optimize its performance. For example, when a tungsten layer deposited on a silicon dioxide layer is being polished, the polishing slurry preferably has a high removal rate for tungsten but a lower rate for silicon dioxide in order to efficiently remove the tungsten while leaving most of the silicon dioxide layer intact.

[0006] Furthermore, since polishing is preferably carried out by a combination of mechanical polishing and chemical corrosion, the silica particles must meet certain requirements in order to be perfectly compatible with the formulation. For example, the silica particle composition needs to be modified depending on whether the particles are anionic or cationic.

[0007] However, there is still an industrial need for silica particles that allow good selectivity between conductive and / or semiconducting materials and dielectric materials, for improved efficiency in manufacturing processes.

[0008] Therefore, the present application aims to provide silica particles that allow good selectivity between one or more conductive layers, which may have any one or more of metals, metal alloys, polysilicon, and any other suitable materials, and one or more dielectric layers, preferably in a manner in which the removal rate of the dielectric material is significantly lower than that of metals and metal alloys, specifically tungsten.

[0009] US 2020 / 0239737 A1 discloses a chemical mechanical abrasive composition comprising water, colloidal silica abrasive particles, and polyalkoxyorganosilane, wherein the chemical mechanical abrasive composition has a pH > 7. [Overview of the Initiative]

[0010] overview The inventors have now surprisingly found that the above objectives can be achieved by the surface-modified silica particles and compositions individually or in any combination. Therefore, this application provides modified silica particles containing alkoxyorganosilanes on their surface. In addition, this application provides a composition comprising water and such modified silica particles, wherein the composition is acidic.

[0011] This application also relates to a method for producing such modified silica particles, the method comprising the following steps: (a) To provide an aqueous dispersion of silica particles; (b) To provide alkoxyorganosilanes; (c) If the aqueous dispersion is not acidic, then make the aqueous dispersion of silica particles acidic; and (d) Next, silica particles and alkoxyorganosilanes are brought into contact with each other to obtain modified silica particles. The present invention provides the method including the above.

[0012] Furthermore, this application relates to a method for chemical mechanical polishing, comprising the following steps: (A) Below: (i) at least one layer comprising silicon dioxide, preferably essentially; and (ii) At least one layer comprising one or more metals or metal alloys, preferably essentially. To provide a substrate that includes; (B) To provide the composition; (C) To provide a chemical mechanical polishing pad having a polishing surface; (D) Bringing the polishing surface of the chemical mechanical polishing pad into contact with the substrate; and (E) Polish the substrate so that at least a portion of it is removed. The present invention provides the method including the above.

[0013] Detailed description Throughout this application, "Me" refers to a methyl group (CH3), and "Et" refers to an ethyl group (CH2-CH3). In this application, the term "point of use" refers to a chemical mechanical polishing (CMP) process. For example, the expression "composition of the point of use" is used to refer to a composition used in a chemical mechanical polishing (CMP) process. This application relates to modified silica particles, more specifically surface-modified silica particles containing alcosioorganosilane on their surface, methods for producing them, compositions containing such modified silica particles, and methods for chemical mechanical polishing using such compositions.

[0014] Throughout this application, it is noted that the terms “modified silica particles” and “surface-modified silica particles” may be used interchangeably. Surface-modified silica particles are produced by contacting (unmodified) silica particles, hereafter simply referred to as "silica particles," with one or more alkoxyorganosilanes. While we do not wish to be constrained by theory, under the conditions used herein and described below, this is thought to result in the alkoxyorganosilanes covalently bonding to the surface of the silica particles, thus producing the surface-modified silica particles. Such reactions and the alkoxyorganosilanes bonding to the surface of such surface-modified silica particles may, for example, be expressed as follows, while we do not wish to be constrained by theory: [ka] R a R is an alkoxy group that is covalently bonded to Si by an alkanediyl group; b R is an organyl group, e.g., an alkyl group; X represents a silica particle. Alternatively, two or even all three Rs of an alkoxyorganosilane. b In this manner, the oxygen group can react with the hydroxyl group on the surface of the silica particles.

[0015] For the purposes of the present application, the selection of the silica particles is not specifically limited. The silica particles used herein may be, for example, any type of colloidal silica particles. The present silica particles may be manufactured from any suitable starting material, for example, may be water glass-based or TMOS / TEOS-based.

[0016] As used herein, the term "water glass" is generally used to refer to alkali salts, preferably sodium and potassium salts of silicic acid Si(OH)4. Each sodium and potassium salt may be, for example, of the formula M 2x Si y O 2y+x or (M2O) x (SiO2), where M = Na or K, and for example, x = 1 and y is an integer from 2 to 4. As used herein, the term "water glass-based" is used to indicate that the present silica particles are preferably manufactured from such alkali salts of silicic acid as starting materials. As used herein, the term "TMOS / TEOS-based" is generally used to refer to silica particles manufactured using Si(OMe)4 ("TMOS") and / or Si(OEt)4 ("TEOS") as starting materials.

[0017] Generally, the silica particles as used herein are well known to those skilled in the art and may be obtained, for example, in a wet process from the starting materials described above as disclosed in R.K. Iler, "The Chemistry of Silica: Solubility, Polymerization, Colloid and Surface Properties and Biochemistry of Silica", Wiley, 1979. To produce the present silica particles contained in the present silica slurry, it is preferred that the silica particles be obtained in a wet process from alkaline silicates. In general, all types of silica particles may be used herein, but nevertheless, the silica particles used herein and specifically the modified silica particles are preferably anionic, i.e., have a persistent negative charge.

[0018] The shape and dimensions of the silica particles used herein are not specifically limited, however such silica particles are suitable for CMP applications. Such silica particles may be, for example, spherical, oval, curved, bent, elongated, branched, or conical.

[0019] For spherical silica particles, the average diameter is preferably at least 5 nm, more preferably at least 10 nm, and most preferably at least 15 nm. For spherical particles, the average diameter is preferably up to 200 nm, more preferably up to 150 nm or 100 nm, even more preferably up to 90 nm or 80 nm or 70 nm or 60 nm, still even more preferably up to 50 nm or 45 nm or 40 nm or 35 nm or 30 nm, and most preferably up to 25 nm. For example, specifically preferred silica particles have an average diameter of at least 15 nm and up to 25 nm.

[0020] For elongated, curved, curved, branched, and oval silica particles, their average diameter is preferably as described above for spherical colloidal silica particles. Preferably, such elongated or oval colloidal silica particles have an aspect ratio, i.e., the ratio of length to average diameter, of at least 1.1, more preferably at least 1.2 or 1.3 or 1.4 or 1.5, even more preferably at least 1.6 or 1.7 or 1.8 or 1.9, and most preferably at least 2.0. The aspect ratio is preferably up to 10, more preferably up to 9 or 8 or 7 or 6, and most preferably up to 5.

[0021] The alkoxyorganosilanes used herein are preferably hydrophilic. The alkoxyorganosilane used in this specification is a poly(alkoxy)organosilane. More preferably, the alkoxyorganosilane has the following formula (I):

Chemical formula

[0022] Preferred examples of the alkoxyorganosilane of formula (I) are those in which R 1 and R 2 are all Me or Et, a is 3, and b is at least 6 and at most 12. For example, b may be at least 6 and at most 9, or at least 9 and at most 12, or at least 8 and at most 12. Most preferably, the alkoxyorganosilane used in this specification is one of formula (I), where R 1 and R 2 are all methyl, a is 3, and b is 11. Such alkoxyorganosilanes may be obtained, for example, from Momentive Performance Materials, Albany, NY, USA.

[0023] Preferably, the alkoxyorganosilane as defined herein reacts with the silica particles at a weight ratio of alkoxyorganosilane to silica particles of at least 0.001, more preferably at least 0.005, even more preferably at least 0.010, still even more preferably at least 0.015, and most preferably at least 0.020. Preferably, the alkoxyorganosilane as defined herein reacts with the silica particles in a weight ratio of alkoxyorganosilane to silica particles of up to 0.50, more preferably up to 0.40 or 0.30, even more preferably up to 0.20, still more preferably up to 0.15 or 0.10, and most preferably up to 0.050.

[0024] Preferably, the silica particles are doped by contacting them with an aluminate, more preferably with an alkali metal aluminate (M[Al(OH)4], where M is an alkali metal). Preferred examples of such alkali metal aluminates are sodium aluminate or potassium aluminate, with sodium aluminate being the most preferred.

[0025] Preferably, doping silica particles with such aluminate as used herein results in doped silica particles containing at least 10 ppm, more preferably at least 20 ppm or 30 ppm or 40 ppm or 50 ppm, even more preferably at least 60 ppm or 70 ppm, even more preferably at least 80 ppm or 90 ppm, and most preferably at least 100 ppm of aluminum relative to the weight of the doped silica particles. Preferably, doping silica particles with such aluminate as used herein results in such doped silica particles containing up to 1000 ppm, more preferably up to 900 ppm, 800 ppm, or 700 ppm, even more preferably up to 600 ppm or 500 ppm, and most preferably up to 400 ppm, relative to the weight of the doped silica particles.

[0026] The modified silica particles are processed in the following steps: (a) To provide an aqueous dispersion of silica particles as defined above, and (b) To provide an alkoxyorganosilane as defined above, It may be manufactured by a process that includes [the following].

[0027] In this method, the aqueous dispersion of silica particles must be acidic. Preferably, the aqueous dispersion has a pH of at least 1.0, more preferably at least 2.0. Preferably, the aqueous dispersion has a pH of up to 5.0, more preferably up to 4.0.

[0028] Therefore, this method also involves the following steps: (c) If the aqueous dispersion of silica particles is not yet acidic, make it acidic, and preferably adjust the pH of the aqueous dispersion of silica particles to the range indicated above. Includes.

[0029] In the following, the now acidic aqueous dispersion of silica particles and the alkoxyorganosilane as previously defined are brought into contact with each other to obtain modified silica particles. This can be done simply by mixing the acidic aqueous dispersion of silica particles with the alkoxyorganosilane and stirring, optionally for a predetermined time, and possibly at a high temperature. Optionally, the silica particles in the aqueous dispersion may be doped with aluminate as described above, and such doping is preferably carried out following step (a), but before step (c).

[0030] These surface-modified silica particles may be used in a composition, which further contains water. Thus, such a composition comprises these surface-modified silica particles and water. The water is preferably deionized water. The composition, comprising water and the aforementioned surface-modified silica particles, is acidic, i.e., characterized by its acidic pH. The composition preferably has a pH of at least 1.0, more preferably at least 2.0. The composition may have a pH of up to 5.0, more preferably up to 4.0.

[0031] When supplied as a concentrate, which can then be diluted with water, preferably deionized water, prior to its use in a chemical mechanical polishing process, the composition may contain modified silica particles in wt% of the total weight of the composition, up to 20 wt%, preferably up to 25 wt%, more preferably up to 30 wt%, even more preferably up to 35 wt%, even more preferably up to 40 wt%, and most preferably up to 50 wt%.

[0032] Alternatively, when used at the point of use, i.e., in a chemical mechanical polishing process, the composition contains modified silica particles in wt% of the total weight of the composition in at least 0.1 wt% (e.g., at least 0.2 wt%, 0.3 wt%, or 0.4 wt%), more preferably at least 0.5 wt%, even more preferably at least 1.0 wt%, even more preferably at least 1.5 wt%, and most preferably at least 2.0 wt%. In this case, the composition preferably contains modified silica particles in wt% of the total weight of the composition in at most 10 wt%, more preferably at most 5.0 wt%, even more preferably at most 4.0 wt%, even more preferably at most 3.5 wt%, and most preferably at most 3.0 wt%.

[0033] Optionally, the composition further comprises any one or more of the group consisting of biocides, pH adjusters, pH buffers, oxidizing agents, chelating agents, corrosion inhibitors, and surfactants.

[0034] Such oxidizing agent may be any suitable oxidizing agent for one or more metals or metal alloys of the substrate to be polished using the composition. For example, the oxidizing agent may be selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, peroxymonosulfates, peroxymonosulfites, peroxymonosulfates, peroxyprimary phosphates, peroxypyrrophosphates, organo-o-halooxy compounds, iodates, permanganates, peroxyacetic acid, iron nitrate, and any blends thereof. Such oxidizing agent may be added in a suitable amount, for example, using wt% of the total weight of the composition at the point of use, at least 0.1 wt% and up to 6.0 wt%.

[0035] Such corrosion inhibitors may be, for example, film-forming agents, or any other suitable corrosion inhibitor. For example, the corrosion inhibitor may be glycine, which may be added in an amount of at least 0.001 wt% to 3.0 wt% based on the total weight of the composition at the point of use.

[0036] Such chelating agents may be any suitable chelating or complexing agents, either as an alternative or in combination, for increasing the removal rate of each material being removed, preferably metal or metal alloy, or for capturing trace metallic impurities that may have an undesirable effect on the performance in the polishing process or in the finished device. For example, the chelating agent may be a compound containing one or more functional groups, including oxygen (e.g., carbonyl, carboxyl, or hydroxyl groups) or nitrogen (e.g., amine or nitrate groups). Examples of suitable chelating agents, in a non-limiting manner, include acetylacetonates, acetates, arylcarboxylates, glycolates, lactates, glucons, gallic acid, oxalates, phthalates, citrates, succinates, tartrates, malates, ethylenediaminetetraacetic acid and their salts, ethylene glycol, pyrogallol, phosphonates, ammonia, amino alcohols, di- and triamines, nitrates (e.g., iron nitrate), and any blends thereof.

[0037] Such biocides may be selected from any suitable biocides, for example, biocides containing isothiazolin derivatives. Such biocides are generally added in amounts of at least 1 ppm and a maximum of 100 ppm relative to the total weight of the composition at the point of use. The amount of biocide added may be applied depending, for example, on the composition and the planned storage period.

[0038] Such pH adjusting agent may be selected from any suitable acid, such as hydrochloric acid, nitric acid, or sulfuric acid, with nitric acid or sulfuric acid being preferred, and nitric acid being particularly preferred.

[0039] Such surfactants may be selected from suitable surfactants, such as cationic, anionic, and nonionic surfactants. A particularly preferred example is ethylenediamine polyoxyethylene surfactant. Generally, the surfactant may be added at the point of use in an amount of 100 ppm to 1 wt% relative to the total weight of the composition, using ppm and wt%.

[0040] Some of these compounds may exist in the form of salts, such as metal salts, acids, or partial salts. Similarly, some of these compounds may fulfill more functions when included in compositions suitable for chemical and mechanical polishing. For example, iron nitrate, specifically Fe(NO3)3, can act as a chelating agent and / or an oxidizing agent and / or a catalytic agent.

[0041] A specific preferred example of a composition that may be used herein at a point of use is, at a point of use, expressed in ppm and wt% relative to the total weight of the composition: (i) at least 1.0 wt% and up to 4.0 wt% of surface-modified silica particles as defined herein, (ii) Fe(NO3)3 in an amount of at least 0.001 wt% and up to 0.10 wt%, preferably at least 0.01 wt% and up to 0.05 wt%, (iii) Kathon ICP II biocide in concentrations of at least 10 ppm and up to 100 ppm. (iv) optionally at least 0.01 wt% and up to 0.05 wt% of malonic acid, (v) at least 1.0 wt% and up to 8.0 wt% hydrogen peroxide (H2O2), and (vi) Water in an amount that yields a total maximum of 100 wt%, Includes.

[0042] This composition may be prepared by standard methods well known to those skilled in the art. Generally, such preparation involves mixing and stirring steps. It can be carried out in either a continuous or batch manner.

[0043] The compositions described above may also be used in a chemical mechanical polishing (CMP) process in which the substrate is polished. The substrate polished in this CMP process comprises (i) at least one layer containing, preferably essentially, silicon dioxide, and (ii) at least one layer containing, preferably essentially, one or more metals or metal alloys. The method for chemical mechanical polishing is therefore as follows: (A)(i) to provide a substrate comprising at least one layer comprising silicon oxide, preferably essentially, and (ii) one or more layers comprising metals or metal alloys, preferably essentially; and (B) To provide compositions as defined herein, Includes.

[0044] As used herein, the term “on top of” is used to indicate that a layer containing metal or a metal alloy is essentially placed / positioned on top of a layer containing silicon oxide. In contrast, and in terms of chemical mechanical polishing, the top layer is the layer adjacent to the polishing pad that is mounted on the CMP polishing machine before polishing begins. As used herein, the term “essentially consisting of” is used to indicate that such layer may contain small amounts of different material, for example, in amounts up to 5 wt% (e.g., in amounts up to 4 wt%, 3 wt%, 2 wt%, 1 wt%, 0.5 wt%, or 0.1 wt%) relative to the total weight of such layer.

[0045] Preferably, the silicon oxide contained in the layer and subsequently in the substrate may be selected from the group consisting of borosilicate glass (BPSG), plasma-enhanced tetraethyl orthosilicate (PETEOS), thermal oxide, undoped silicate glass, high-density plasma (HDP) oxide, and silane oxide. Preferably, the metal or metal alloy contained in the layer and then in the substrate is selected from the group consisting of tungsten, tantalum, copper, titanium, titanium nitride, aluminum silicon, and any combination thereof, and preferably tungsten.

[0046] In the CMP process, a polishing pad having an abrasive surface is used for the actual polishing of the substrate. Such a polishing pad may be, for example, a woven or non-woven polishing pad, and may contain or consist of a suitable polymer. Exemplary polymers are too numerous to list, but include polyvinyl chloride, polyvinyl fluoride, nylon, polypropylene, polyurethane, and any blend thereof. The polishing pad and the substrate to be polished are generally mounted in a polishing apparatus, pressed together, and generally rotated non-concentrically, i.e., by different axes of rotation, thereby scraping and removing material from the surface or substrate. Thus, this CMP process consists of the following steps: (C) To provide a chemical mechanical polishing pad having a polishing surface; (D) Bringing the polishing surface of the chemical mechanical polishing pad into contact with the substrate; and (E) Polish the substrate so that at least a portion of it is removed. It also includes.

[0047] This CMP process may be applied in the manufacture of flat panel displays, integrated circuits (ICs), memory or rigid disks, metals, interlayer insulating film devices (ILDs), semiconductors, micro-electromechanical systems, ferroelectrics, and magnetic heads. In other words, the substrates polished in this CMP process may be selected from the group consisting of flat panel displays, integrated circuits (ICs), memory or rigid disks, metals, interlayer insulating film devices (ILDs), semiconductors, micro-electromechanical systems, ferroelectrics, and magnetic heads.

[0048] example All materials used in the examples are commercially available. Sodium aluminate, malonic acid, and iron nitrate (Fe(NO3)3) can be obtained, for example, from SigmaAldrich. Alkoxysilane, Silkequest A-1230, was obtained from Momentive Performance Materials, Albany, NY, USA. Kathon ICP II biocide was obtained from DuPont de Nemours, Wilmington, Delaware, USA. Water glass-based silica particles are obtained in-house from Merck KGaA, Darmstadt, Germany, and are commercially sold under the trademark name Klebosol®.

[0049] The example was performed using the silica particles shown in Table 1. [Table 1]

[0050] Example 1 A sodium aluminate solution was obtained by dissolving 5.117 g of sodium aluminate powder in 4650 g of deionized water under stirring, and this solution was then heated to 50°C while stirring. 6081.5 g of silica sol (containing 26.26 wt% SiO2 relative to the total weight of the silica sol) was heated to 50°C under stirring, and then slowly added to a sodium aluminate solution under stirring for more than 90 minutes. The resulting solution was then heated to 70°C, heated for a further 60 minutes, and then cooled to room temperature, with stirring throughout to produce 10646 g of doped silica sol with an alkaline pH (containing 15 wt% SiO2 relative to the total weight of the silica sol), thereby obtaining doped silica particles SP-1-D, SP-4-D, and SP-5-D, respectively.

[0051] Example 2 6225 g of acidic (pH 2-3) silica sol (containing 15 wt% SiO2 relative to the total weight of the silica sol) was diluted with 4760 g of deionized water to obtain 10985 g of silica sol (containing 8.5 wt% SiO2 relative to the total weight of the silica sol). Next, 31.125 g of Silkest A-1230 was added to this. The resulting solution was heated to 90°C while stirring, and then cooled to room temperature to produce 10861 g of surface-modified silica sol (containing 8.6 wt% SiO2 relative to the total weight of the silica sol) containing surface-modified silica particles SP-5-M.

[0052] Example 3 Surface-modified doped silica particles were manufactured as described in Example 2, except that the silica sol used was the same doped silica sol obtained in Example 1, which was acidified. Thus, surface-modified doped silica sols containing surface-modified doped silica particles SP-1-DM, SP-2-DM, SP-3-DM, SP-4-DM, and SP-5-DM were produced.

[0053] Example 4 Chemical mechanical polishing was performed using the aqueous compositions indicated in Table 2, in wt% and ppm relative to the total weight of the composition. The compositions were filtered (0.3 μm) before use in chemical mechanical polishing. [Table 2]

[0054] Chemical and mechanical polishing was performed on 8” TEOS (silicon oxide) and tungsten wafers using IC1000® CMP polishing pads (available from DuPont de Nemours, Wilmington, Delaware, USA) on a Mirra® Mesa CMP 200 mm (available from Applied Materials Inc., Santa Clara, CA, USA). Further polishing conditions are shown in Table 3 below. [Table 3]

[0055] The results of chemical and mechanical polishing are shown in Table 4 below, where PC-1 to PC-3 are comparative examples. [Table 4]

[0056] As demonstrated by the removal rates for silicon dioxide and tungsten, surface-modified silica particles, such as those of P-1 containing alkoxyorganosilane, exhibit improved selectivity compared to aluminate-doped silica particles of PC-1 to PC-3, with high tungsten removal rates and significantly reduced silicon dioxide removal rates, while simultaneously maintaining a high level of tungsten removal rate.

[0057] The data in Table 4 also show that the combination of aluminate doping and surface modification with alkoxyorganosilane (see P-2 to P-7) also leads to a reduction in the silicon dioxide removal rate. Surprisingly, however, the compositions used in P-2 to P-7 were found to exhibit significantly improved dispersion stability and therefore could be stored for significantly longer than the composition used in P1.

[0058] In general, surprisingly, the use of alkoxyorganosilanes as defined herein has been found to lead to a significant improvement in the selectivity of removal rates between the silicon oxide layer, i.e., the dielectric layer, and the metal or metal alloy layer, specifically the tungsten layer. It was quite surprising that the alkoxyorganosilanes allowed the silica particles used herein to be modified in such a way that high removal rates for the metal or metal alloy, specifically tungsten, were obtained, while simultaneously allowing extremely low removal rates for silicon oxide, i.e., the dielectric material. Therefore, these surface-modified silica particles are considered well-suited for use in the chemical mechanical polishing of metal or metal alloy layers, specifically the tungsten layer.

Claims

1. Modified silica particles containing alkoxyorganosilanes on their surfaces.

2. The modified silica particles of claim 1 , wherein the silica particles are colloidal silica particles.

3. 3. The modified silica particles of claim 1 or claim 2, wherein the silica particles are water glass based.

4. 4. The silica particles according to claim 1, wherein the alkoxyorganosilane is a hydrophilic alkoxyorganosilane.

5. 5. Silica particles according to claim 1, wherein the alkoxysilane is a poly(alkoxy)organosilane.

6. The alkoxyorganosilane is represented by the following formula (I): 【Chemistry 1】 In the formula, R １ and R ２ are each independently selected from the group consisting of methyl, ethyl, and propyl; a is an integer of at least 1 and at most 5; and b is an integer of at least 1 and at most 20; Here, preferably, R １ and R ２ are all methyl, a is 3, and b is 11; The modified silica particle according to any one of claims 1 to 5, wherein

7. The modified silica particles according to any one of claims 1 to 6, wherein the silica particles are doped with an alkali metal aluminate.

8. A composition comprising water and the modified silica particles of any one of claims 1 to 7, wherein the composition is acidic.

9. 9. The composition of claim 8, wherein the composition has a pH of at least 1.0 and at most 5.0, preferably at least 2.0 and at most 4.

0.

10. 10. The composition of claim 8 or claim 9, further comprising any one or more of the group consisting of a biocide, a pH adjuster, a pH buffer, an oxidizing agent, a chelating agent, a corrosion inhibitor, and a surfactant.

11. A method for producing modified silica particles according to any one of claims 1 to 7, comprising the following steps: (a) providing an aqueous dispersion of silica particles; (b) providing an alkoxyorganosilane; (c) subsequently acidifying the aqueous dispersion of silica particles, if the aqueous dispersion is not already acidic; and (d) then contacting the silica particles and the alkoxyorganosilane with each other, thereby obtaining modified silica particles; The method comprising:

12. 12. The method for producing modified silica particles of claim 11, wherein following step (a) and before step (c), the silica particles are doped with an aluminate.

13. 1. A method for chemical mechanical polishing, comprising the steps of: (A) Below: (i) at least one layer comprising, preferably consisting essentially of, silicon oxide; and (ii) at least one layer comprising, preferably consisting essentially of, one or more metals or metal alloys; providing a substrate comprising: (B) providing a composition according to any one of claims 8 to 10; (C) providing a chemical mechanical polishing pad having a polishing surface; (D) contacting the polishing surface of the chemical mechanical polishing pad with the substrate; and (E) polishing the substrate such that at least a portion of the substrate is removed; The method comprising:

14. (i) the silicon oxide is selected from the group consisting of borophosphosilicate glass (BPSG), plasma-enhanced tetraethylorthosilicate (PETEOS), thermal oxide, undoped silicate glass, high-density plasma (HDP) oxide, and silane oxide; and / or (ii) the one or more metals or metal alloys are selected from the group consisting of tungsten, tantalum, copper, titanium, titanium nitride, aluminum silicon, and any combination thereof, and preferably tungsten; The method of claim 13.

15. 15. The method of claim 13 or claim 14, wherein the substrate is selected from the group consisting of a flat panel display, an integrated circuit (IC), a memory or rigid disk, a metal, an interlayer dielectric device (ILD), a semiconductor, a microelectromechanical system, a ferroelectric, and a magnetic head.