Member with heat spreader structure and manufacturing method thereof

Abstract

To provide a more efficient heat dissipation structure and a manufacturing method of the heat dissipation structure which can be easily formed without applying damage to an integrated circuit.SOLUTION: A member 34 with a heat spreader structure comprises a substrate member 31, on which an integrated circuit part 10 is formed, and a heat spreader structure part 9 which is formed on the integrated circuit part 10. The integrated circuit part 10 is formed in a recessed-and-projected shape, and the heat spreader structure part 9 is configured by forming a projected-and-recessed shape, which is fitted to the recessed-and-projected shape of the integrated circuit part 10, in a diamond layer 6 or forming a projected-and-recessed shape, which is fitted to the recessed-and-projected shape of the integrated circuit part 10, in a silicon substrate 8 where the diamond layer 6 is formed. The projected-and-recessed shape of the heat spreader structure part 9 is fitted to the recessed-and-projected shape of the integrated circuit part 10, and the heat spreader structure part 9 is bonded to the substrate member 31.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a member with a heat spreader structure and a manufacturing method thereof, and in particular to a semiconductor substrate and a semiconductor device, and provides a more efficient structure and means when using diamond, which has high thermal conductivity, as a heat dissipation material for semiconductor elements, which are becoming increasingly high-performance. [Background technology]

[0002] As we enter the full-fledged IoT era, the capacity (processing capacity, data storage capacity) of data centers continues to expand through active use of the cloud, and performance continues to improve. As performance improves, the problem of heat generation from elements is considered to be more important than ever before. In fact, as shown in Non-Patent Document 1, one element consumes about 600 W of power, and heat control associated with this has become important.

[0003] In Non-Patent Document 1, a Compute Tile and a High Bandpass Memory (HBM) are connected to a heat spreader (Integrated Heat Spreader) through an intermediate material (Thermal Interface Material) on the Compute Tile and the HBM (High Bandpass Memory).

[0004] On the other hand, with the advent of 5G, solid-state power amplifiers, which are easy to realize as small and lightweight radio frequency amplifiers for mobile communication base stations, satellite communication systems, etc. As mentioned above, these also have the problem of self-heating occurring during amplification operation, which causes an increase in temperature within the element, resulting in a decrease in element characteristics and reliability.

[0005] A typical concrete solution is to connect a metal with high thermal conductivity such as copper to the element (heat generating body) (heat spreader), and then create fins on this metal to cool it with air or a coolant (water cooling, etc.) to control the temperature rise. From Non-Patent Document 2, focusing on thermal conductivity (unit W / mK), copper has a thermal conductivity of 386-402 while diamond has a high thermal conductivity of 1000-2000, and it can be seen that diamond is very effective as an element heat dissipation material.

[0006] In fact, taking advantage of this high thermal conductivity, its use as a heat dissipation material for semiconductor elements has been proposed. Patent Document 1 discloses a method in which diamond or a diamond-containing material with high thermal conductivity is attached to the back surface of a semiconductor element. Furthermore, Patent Document 2 discloses a method for growing diamond or attaching diamond to an integrated circuit package in which semiconductor elements are integrated. Furthermore, focusing on the heat conduction mechanism of diamond itself, Patent Document 3 discloses a method for improving the thermal conductivity by controlling the isotopes of carbon that constitutes diamond.

[0007] As described above, heat spreaders using diamond have attracted much attention due to their high thermal conductivity. Although there is a method for increasing the thermal conductivity of diamond to its limit, as in Patent Document 3, the practical issue is how to bring diamond into contact with semiconductor elements.

[0008] Patent Document 2 discloses growing diamond on an integrated circuit or attaching a grown substrate to another substrate. However, growing diamond requires a temperature of 800°C or higher and plasma regardless of whether it is single crystal or polycrystal, and growing it on a semiconductor integrated circuit is thought to have many restrictions due to the problem of protecting the element.

[0009] With reference to FIG. 6, a heat spreader formed on an integrated circuit using diamond will be described. FIG. 6 is an explanatory diagram of a structure including a general heat sink. As shown in FIG. 6, a typical heat sink-containing structure 134 is formed by placing an intermediate material (dummy silicon) 102 on an integrated circuit support substrate 105 such as a laminate or PCB on which a core 103 such as a CPU, and cache / HBMs 104-1 and 104-2 are formed. A heat spreader (heat sink) metal 101 is formed. Thus, current integrated circuits are mainly structured with a core such as a CPU and memories such as cache and HBM stacked on silicon or other substrates. Therefore, the height differs depending on the element (CPU or memory, etc.), resulting in a difference in height when integrated. Generally, to eliminate this step, as shown in Figure 6, after stacking dummy silicon or other materials, a metal such as Cu is attached as a heat spreader, or diamond is attached as described in Patent Document 2. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2004-158726 A [Patent Document 2] Special Publication No. 2005-500668 [Patent Document 3] Patent Publication No. 2021-119602 [Non-patent literature]

[0011] [Non-Patent Document 1] ISSCC2022,Wilfred Gomes,et.al.,“2.1 Ponte Vecchio: A Multi-Tile 3D Stacked Processor for Exascale Computing [Non-Patent Document 2] AIST / Distributed Thermophysical Property Database (https: / / tpds.db.aist.go.jp / opendata / metal_tc.html) Summary of the Invention [Problem to be solved by the invention]

[0012] For high-performance CPUs / GPUs / NPUs used in data centers, where performance and functionality are constantly increasing and integration is becoming more and more advanced, measures to dissipate heat are extremely important in order to prevent malfunctions and reduced reliability of the elements.

[0013] An object of the present invention is to provide a more efficient heat dissipation structure and a method for manufacturing a heat dissipation structure that can be easily formed without damaging an integrated circuit. The present invention has been made to solve the above-mentioned problems, and provides a more efficient structure and means for using diamond, which has high thermal conductivity, as a heat dissipation material for semiconductor elements, the performance of which is becoming increasingly high. [Means for solving the problem]

[0014] The present invention has been made to achieve the above-mentioned object, and provides a member with a heat spreader structure, comprising a substrate member on which an integrated circuit portion is formed, and a heat spreader structure portion formed on the integrated circuit portion, wherein the integrated circuit portion forms a concave-convex shape, and the heat spreader structure portion is a diamond layer on which a convex-convex shape that fits into the convex-convex shape of the integrated circuit portion is formed, or a silicon substrate on which a diamond layer is formed, the silicon substrate being formed with a convex-convex shape that fits into the convex-convex shape of the integrated circuit portion, and the convex-convex shape of the heat spreader structure portion is fitted into the convex-convex shape of the integrated circuit portion, and the heat spreader structure portion is bonded to the substrate member.

[0015] By using such a member with a heat spreader structure, it is possible to manufacture an element with higher heat dissipation efficiency. In detail, when stacking diamond for heat dissipation on an integrated circuit (heat spreader), a shape that matches the unevenness of the integrated circuit is created on a diamond that has been stacked on a separate substrate in advance, and then the two are bonded together. By using diamond, it is expected that the high thermal conductivity of diamond can be utilized to improve heat dissipation characteristics. In addition, diamond grown on a silicon substrate is used, and the silicon substrate is removed or partially removed before bonding. By using silicon substrate, which is easy to process, as the material, it is possible to maintain heat dissipation characteristics even if the integrated circuit has unevenness.

[0016] In this case, the heat spreader structure member can be the above-described member with a heat spreader structure, characterized in that the heat spreader structure portion is a wafer, the substrate member is a wafer having the integrated circuit portion, and the wafers are bonded together.

[0017] In the case of wafer-to-wafer bonding, the silicon can be processed (thickness and shape in the XY directions) to match the integrated circuit fabricated in advance on the silicon substrate, allowing for efficient bonding and easily forming a high heat dissipation structure.

[0018] In this case, the heat spreader structure member can be the above-described member with a heat spreader structure, characterized in that the heat spreader structure portion is a chip, the substrate member is a wafer having the integrated circuit portion, and the chip and the wafer are bonded together.

[0019] As for the chip-to-wafer method, a silicon substrate on which diamond has been grown is cut to the size of an integrated circuit and then arranged (diamond chips), a small piece of this diamond chip is prepared in advance and attached to the recess of the integrated circuit, and then a silicon substrate on which diamond has been grown is attached on top of this so as to cover the entire integrated circuit, and finally the silicon is removed. This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0020] In this case, the heat spreader structure member can be the above-described member with a heat spreader structure, characterized in that the heat spreader structure portion is a chip, the substrate member is a chip, and the chips are bonded together.

[0021] For the chip-to-chip method, a silicon substrate with diamond grown on it is cut to the size of an integrated circuit (diamond chips) and the diamond chips are arranged in a row. The diamond chips are prepared using photolithography or other methods to have a shape that matches the integrated circuit and then attached. After that, a silicon substrate with diamond grown on it is attached on top of this so as to cover the entire integrated circuit, and finally the silicon is removed. This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0022] In this case, the member with a heat spreader structure described above can be characterized in that the diamond layer is a CVD diamond layer.

[0023] By growing diamond on a silicon substrate by CVD, a highly heat dissipating structure can be easily formed.

[0024] The present invention has been made to achieve the above-mentioned object, and provides a method for producing a member with a heat spreader structure, comprising the steps of: preparing a substrate member having an uneven shape and on which an integrated circuit portion is formed; preparing a silicon substrate having a diamond layer formed thereon; forming an uneven shape in the diamond layer that fits into the uneven shape of the integrated circuit portion, or forming an uneven shape in the silicon substrate that fits into the uneven shape of the integrated circuit portion; fitting the uneven shape of the diamond layer into the uneven shape of the integrated circuit portion and bonding them together, and then removing the silicon substrate on the surface to form a heat spreader structure consisting of only the diamond layer on the substrate member; or fitting the uneven shape of the silicon substrate into the uneven shape of the integrated circuit portion and bonding them together to form a heat spreader structure consisting of a diamond layer and a silicon substrate.

[0025] A hetero substrate in which diamond is grown on a silicon substrate is prepared as the heat spreader, and an uneven shape is formed in the diamond layer of the substrate to fit the uneven shape of the integrated circuit part, or the silicon part is thinned in advance and then processed on the silicon part to match the shape of the integrated circuit.

[0026] By adjusting the thickness of the silicon portion when it is thinned to match the unevenness of the integrated circuit, the heat spreader can be in close contact with each element of the integrated circuit, enabling effective heat conduction.

[0027] In addition, the silicon processing can be performed using general photolithography and subsequent etching techniques. There are several methods for handling the thinned wafer, such as attaching a dummy substrate to the diamond side in advance or leaving a thick layer of silicon only on the periphery of the silicon, and the methods are not limited here.

[0028] By pre-processing the silicon in this way, it is possible to make the silicon layer between the diamond and the integrated circuit as thin as possible, thus creating an efficient heat spreader.

[0029] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0030] At this time, in the unevenness forming step, it is preferable to form the unevenness by removing at least a part of the silicon substrate in accordance with the unevenness of the integrated circuit portion.

[0031] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0032] At this time, the method for producing a member with a heat spreader structure described above can further include a step of cutting the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, and in the step of forming the heat spreader structure, the diamond chips are arranged so that the uneven shape of the diamond layer or the silicon substrate fits into the uneven shape of the integrated circuit portion, and the heat spreader structure is bonded to the substrate member.

[0033] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0034] At this time, furthermore, after the step of forming the heat spreader structure, the method can include the steps of attaching a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member, and removing the silicon substrate.

[0035] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0036] At this time, the method further includes a step of cutting the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, and a step of cutting the substrate member on which the integrated circuit portion is formed into small pieces to form chips with integrated circuits, and in the step of forming the heat spreader structure, the chips with integrated circuits are aligned, and then the diamond chips are bonded so that the uneven shape fits into the uneven shape of the integrated circuit portion, thereby forming the heat spreader structure on the substrate member.

[0037] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit.

[0038] At this time, the method for producing a member with a heat spreader structure described above can further include the steps of, after the step of forming the heat spreader structure, attaching a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member, and removing the silicon substrate.

[0039] This manufacturing method makes it possible to easily form a high heat dissipation structure without damaging the integrated circuit. Effect of the Invention

[0040] As described above, by using diamond in the member with a heat spreader structure of the present invention, it is possible to improve the heat dissipation characteristics by utilizing the high thermal conductivity of diamond.

[0041] In addition, the method for manufacturing a member with a heat spreader structure allows the diamond layer to be formed without damaging the integrated circuit, making it possible to easily form a high heat dissipation structure. In addition, the diamond material grown on the silicon substrate can be used, making it possible to use a large-diameter substrate. [Brief description of the drawings]

[0042] [Figure 1]FIG. 2 is an explanatory diagram of a member with a heat spreader structure according to the present invention. [Diagram 2] 1A to 1C are explanatory diagrams of a method for producing a member with a heat spreader structure according to the present invention. [Diagram 3] FIG. 2 is an explanatory diagram of a method for producing a member with a heat spreader structure according to the present invention, showing wafer-to-wafer bonding. [Figure 4] FIG. 2 is an explanatory diagram of a method for producing a member with a heat spreader structure of the present invention, showing chip-to-wafer bonding. [Diagram 5] FIG. 2 is an explanatory diagram of a method for producing a member with a heat spreader structure of the present invention, showing chip-to-chip bonding. [Figure 6] FIG. 1 is an explanatory diagram of a structure including a general heat sink. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these.

[0044] As described above, there has been a demand for an integrated circuit having high thermal conductivity and a method for fabricating the same that is simple and does not cause damage.

[0045] As a result of extensive research into the above problems, the inventors discovered that an integrated circuit heat spreader structure using diamond grown on a silicon substrate and a method for manufacturing the same can provide an integrated circuit with high thermal conductivity and a simple method for manufacturing the same without causing damage, and thus completed the present invention.

[0046] First embodiment Hereinafter, a member with a heat spreader structure according to a first embodiment of the present invention will be described with reference to FIG.

[0047] (Heat spreader structured component) FIG. 1 shows an explanatory diagram of a member with a heat spreader structure according to the present invention. As shown in FIG. 1, a member 34 with a heat spreader structure of the present invention has a substrate member 31 on which an integrated circuit portion 10 is formed, and a heat spreader structure portion 9 formed on the integrated circuit portion 10.

[0048] (Substrate material) The substrate member 31 is composed of a substrate 5 and an integrated circuit portion 10 formed on the substrate 5 . Substrate 5 is an integrated circuit supporting substrate such as a silicon substrate, laminate or PCB. For example, the substrate member 31 is made up of a silicon substrate having a diameter of 300 mm and an integrated circuit such as a CPU formed on the silicon substrate.

[0049] (Integrated Circuit Part) The integrated circuit unit 10 includes a core 3 such as a CPU, and caches / HBMs 4-1 and 4-2. The Cash / HBM 4-2 is formed by being stacked on the Cash / HBM 4-1, and has a structure in which it protrudes from only the portion of the core 3. This causes the integrated circuit portion 10 to have an uneven shape.

[0050] (Heat spreader structure) The heat spreader structure 9 is a silicon substrate 8 on which a diamond layer 6 is formed, and the silicon substrate 8 is provided with a concave-convex shape that fits into the concave-convex shape of the integrated circuit portion 10. 1, a through hole is formed in the silicon substrate 8, and the diamond layer 6 is in contact with the Cash / HBM 4-2. In other words, the silicon substrate 8 is processed like an openwork.

[0051] In the member 34 with a heat spreader structure, the uneven shape of the heat spreader structure 9 is fitted into the uneven shape of the integrated circuit portion 10, and the heat spreader structure 9 is bonded to the substrate member 10.

[0052] (Diamond layer) There are various known methods for synthesizing the diamond layer 6, and for semiconductor substrate applications, there are CVD (Chemical Vapor Deposition) methods such as microwave plasma and hot filament. Among these, the hot filament method is preferable because it can be applied to large diameter substrates.

[0053] The hot filament method is a method in which a substrate is placed in a reduced pressure reaction vessel, methane and hydrogen are introduced as gases, and an electric current is applied to a tungsten or titanium filament placed on the substrate to generate high heat, which decomposes and activates the gases, thereby growing diamond.

[0054] (Method of manufacturing a member with a heat spreader structure) Next, a method for producing a member with a heat spreader structure according to the first embodiment of the present invention will be described with reference to FIG. FIG. 2 shows an explanatory diagram of a method for producing a member with a heat spreader structure according to the present invention. As shown in FIG. 2, the method for producing a member with a heat spreader structure of the present invention includes a substrate member preparation step, a silicon substrate for forming a diamond layer preparation step, a concave-convex shape formation step, and a heat spreader structure formation step.

[0055] (Substrate component preparation process) This is a step of preparing a substrate member 31 having an uneven surface on which the integrated circuit portion 10 is formed. For example, it can be prepared by forming an integrated circuit on a silicon substrate using a conventional method such as photolithography.

[0056] (Diamond layer formation silicon substrate preparation process) This is a step of preparing a silicon substrate 7 on which a diamond layer 6 is formed. A diamond hetero-substrate is prepared by growing it on a silicon substrate by CVD. The silicon substrate 7 on which the diamond layer 6 is formed is a diamond layer-formed silicon substrate 32 .

[0057] (Uneven shape formation process) This is a process for forming a concave-convex shape on the silicon substrate 7 that fits into the concave-convex shape of the integrated circuit portion 10. The silicon substrate 7 is made into a processed silicon substrate 8. For example, in the unevenness forming step, at least a part of the silicon substrate 7 is removed to match the unevenness of the integrated circuit portion 10, thereby forming the unevenness. First, the silicon substrate 7 is thinned (determined based on the step of the integrated circuit), and silicon is removed by photolithography to match the shape of the integrated circuit. The silicon substrate 8 on which the diamond layer 6 has been formed and processed is used as a substrate 33 having a concave-convex shape.

[0058] (Heat spreader structure forming process) This is a process in which the uneven shape of the integrated circuit portion 10 is fitted with the uneven shape of the silicon substrate 8 and bonded together to form the heat spreader structure portion 9 made of the diamond layer 6 and the silicon substrate 8 on the substrate member 31. At this time, for example, the surface of the silicon substrate 8 may be activated with plasma, or the attachment may be performed using an adhesive or the like.

[0059] FIG. 3 is an explanatory diagram of a method for producing a member with a heat spreader structure of the present invention, showing wafer-to-wafer bonding. As shown in FIG. 3, the heat spreader structure 9 is a wafer, the substrate member 31 is a wafer having an integrated circuit portion, and the wafers are bonded together.

[0060] Second Embodiment Hereinafter, a member with a heat spreader structure according to a second embodiment of the present invention will be described. The member with a heat spreader structure according to the second embodiment of the present invention has a configuration similar to that of the first embodiment, except that the heat spreader structure portion 9 has an uneven shape formed in the diamond layer 6 that fits into the uneven shape of the integrated circuit portion 10. Furthermore, the method for producing a member with a heat spreader structure according to the second embodiment of the present invention has the same configuration as the first embodiment, except that the uneven shape forming step is a step of forming an uneven shape in the diamond layer that fits into the uneven shape of the integrated circuit part, and the heat spreader structure forming step is a step of fitting the uneven shape of the diamond layer into the uneven shape of the integrated circuit part and bonding them together, and then removing the silicon substrate on the surface to form a heat spreader structure consisting of only the diamond layer on the substrate member. The silicon substrate can be removed by etching or grinding / polishing.

[0061] Third embodiment Hereinafter, a method for producing a member with a heat spreader structure according to a third embodiment of the present invention will be described. FIG. 4 is an explanatory diagram of a method for producing a member with a heat spreader structure according to a third embodiment of the present invention, showing chip-to-wafer bonding. As shown in FIG. 4, the heat spreader structure 9 is a chip, the substrate member 31 is a wafer having an integrated circuit portion, and the chip and the wafer are bonded together.

[0062] The method for producing a member with a heat spreader structure according to the third embodiment of the present invention has the same configuration as that of the first embodiment, except that chip-to-wafer bonding is used. The first embodiment was an example of wafer-to-wafer, but chip-to-wafer is also possible. The integrated circuit is in the form of a wafer, but unlike the first embodiment, the diamond to be bonded to it is prepared in advance as a die (chip) for use as a heat sink, and is then arranged and bonded to the integrated circuit (the bonding method can be surface activation of the diamond die or an adhesive). In this case as well, efficient heat dissipation is possible by thinning the silicon substrate on which the diamond is grown in advance.

[0063] In this case, it is possible to arbitrarily select whether the diamond surface or the silicon surface is to be bonded to the integrated circuit.

[0064] The method for producing a member with a heat spreader structure according to the third embodiment of the present invention further includes a step of cutting the silicon substrate 8 on which the diamond layer 6 is formed into small pieces to form diamond chips 35. In the process of forming a heat spreader structure 9 on a substrate member 31 by fitting and bonding the uneven shape of the integrated circuit portion 10 to the uneven shape of the diamond layer 6 or silicon substrate 8, diamond chips 35 are arranged so that the uneven shape of the diamond layer 6 or silicon substrate 8 fits into the uneven shape of the integrated circuit portion 10, and the heat spreader structure 9 is bonded to the substrate member 31. In this way, a chip-to-wafer bonded substrate 36 is produced.

[0065] Furthermore, after the step of fitting and bonding the uneven shape of the diamond layer 6 or the silicon substrate 8 into the uneven shape of the integrated circuit portion 10 to form the heat spreader structure portion 9 on the substrate member 31, it is preferable to have the following steps: bonding a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member; and removing the silicon substrate. In this manner, a large diamond substrate may be further bonded onto the substrate so as to cover the entire substrate.

[0066] (Fourth embodiment) A method for producing a member with a heat spreader structure according to the fourth embodiment of the present invention will be described below.

[0067] FIG. 5 is an explanatory diagram of a method for producing a member with a heat spreader structure of the present invention, showing chip-to-chip bonding. As shown in FIG. 5, the heat spreader structure 9 is a chip, and the substrate member 31 is a chip, and the chips are bonded together.

[0068] The method for producing a member with a heat spreader structure according to the fourth embodiment of the present invention has the same configuration as the first embodiment, except that chip-to-chip bonding is used. The first embodiment is an example of wafer-to-wafer and the third embodiment is an example of chip-to-wafer, but chip-to-chip is also possible. This method involves preparing an integrated circuit chip and a die (chip) for the heat sink in advance, arranging the die (chip) on the integrated circuit chip and bonding it (the bonding method can be surface activation of the diamond die or an adhesive). In this case, too, efficient heat dissipation is possible by thinning the silicon substrate on which diamond is grown in advance.

[0069] The method for manufacturing a member with a heat spreader structure according to the fourth embodiment of the present invention further includes a step of cutting the silicon substrate 8 on which the diamond layer 6 is formed into small pieces to form diamond chips 35, and a step of cutting the substrate member on which the integrated circuit portion is formed into small pieces to form chips with integrated circuits 37. In the process of forming a heat spreader structure 9 on a substrate member by fitting and bonding the uneven shape of the diamond layer 6 or silicon substrate 8 to the uneven shape of the integrated circuit portion, diamond chips 35 are arranged so that the uneven shape of the diamond layer 6 or silicon substrate 8 fits into the uneven shape of the integrated circuit portion, and the heat spreader structure 9 is bonded to the substrate member 31. In this way, a chip-to-chip bonded substrate 38 is produced.

[0070] Furthermore, after the step of fitting and bonding the uneven shape of the diamond layer 6 or the silicon substrate 8 into the uneven shape of the integrated circuit portion 10 to form the heat spreader structure portion 9 on the substrate member 31, it is preferable to have the following steps: bonding a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member; and removing the silicon substrate. EXAMPLES

[0071] The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto.

[0072] Example 1 A diamond layer was formed on a 300 mm diameter silicon substrate by the hot filament method. The diamond was microcrystalline and had a thickness of 0.05 mm. Using such a silicon wafer, the silicon on the side opposite to the side on which the diamond was formed was thinned by grinding, while leaving the outer periphery of the silicon at its original thickness so that photolithography could be performed. Photolithography was carried out to form a concave-convex structure. A wafer on which an integrated circuit was fabricated was bonded to create a heat spreader structure.

[0073] Example 2 A diamond layer was formed on a 300 mm diameter silicon substrate by the hot filament method. The diamond was microcrystalline and had a thickness of 0.05 mm. Such a silicon wafer was cut to an appropriate size, and the silicon on the side opposite to the side on which the diamonds were formed was thinned by grinding to form chips, and photolithography was performed to form a concave-convex structure. A wafer on which an integrated circuit was fabricated was bonded to create a heat spreader structure.

[0074] Performance evaluation tests of the integrated circuit showed that the heat spreader structure did not damage the integrated circuit and that the heat spreader structure provided high heat dissipation efficiency.

[0075] The present invention is not limited to the above-described embodiment. The above-described embodiment is merely an example, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included in the technical scope of the present invention. [Explanation of symbols]

[0076] 3...Core such as CPU, 4-1...Cash / HBM, 4-2...Cash / HBM, 5...Substrate, 6...Diamond layer, 7...Silicon substrate, 8...Processed silicon substrate, 9...Heat spreader structure, 10...Integrated circuit portion, 31...Substrate member, 32...Silicon substrate with diamond layer, 33...Uneven shape formed substrate, 34...Member with heat spreader structure, 35...Diamond chip, 36...Chip-to-Wafer bonded substrate, 37...Chip with integrated circuit, 38...Chip-to-chip bonded substrate, 101...Heat spreader (heat sink) metal, 102...Intermediate material (dummy silicon), 103...Core such as CPU, 104-1...Cash / HBM, 104-2...Cash / HBM, 105...Integrated circuit support substrate such as laminate or PCB, 134...Structure including a general heat sink.

Claims

1. A member with a heat spreader structure, comprising: a substrate member on which an integrated circuit portion is formed; and a heat spreader structure portion formed on the integrated circuit portion, The integrated circuit portion forms a concave-convex shape, the heat spreader structure is a diamond layer having a convexo-concave shape formed thereon to fit into the convexo-concave shape of the integrated circuit portion, or a silicon substrate having a diamond layer formed thereon, the silicon substrate having a convexo-concave shape formed thereon to fit into the convexo-concave shape of the integrated circuit portion, A member with a heat spreader structure, characterized in that the uneven shape of the heat spreader structure is fitted into the uneven shape of the integrated circuit portion, and the heat spreader structure is bonded to the substrate member.

2. 2. A member with a heat spreader structure as described in claim 1, characterized in that the heat spreader structure is a wafer, the substrate member is a wafer having the integrated circuit portion, and the wafers are bonded together.

3. 2. A member with a heat spreader structure as described in claim 1, characterized in that the heat spreader structure is a chip, the substrate member is a wafer having the integrated circuit portion, and the chip and the wafer are bonded together.

4. 2. The member with a heat spreader structure according to claim 1, wherein the heat spreader structure is a chip, the substrate member is a chip, and the chips are bonded together.

5. 5. The member with a heat spreader structure according to claim 1, wherein the diamond layer is a CVD diamond layer.

6. A method for producing a member with a heat spreader structure, comprising the steps of: preparing a substrate member having an integrated circuit portion and a concave-convex shape; Providing a silicon substrate having a diamond layer formed thereon; forming a concave-convex shape on the diamond layer that fits into the concave-convex shape of the integrated circuit portion, or forming a concave-convex shape on the silicon substrate that fits into the concave-convex shape of the integrated circuit portion; a step of fitting the uneven shape of the diamond layer into the uneven shape of the integrated circuit part, bonding them together, and then removing the silicon substrate on the surface to form a heat spreader structure consisting of only the diamond layer on the substrate member; or a step of fitting the uneven shape of the silicon substrate into the uneven shape of the integrated circuit part, bonding them together to form a heat spreader structure consisting of a diamond layer and a silicon substrate.

7. 7. The method for producing a member with a heat spreader structure according to claim 6, wherein in the uneven shape forming step, the uneven shape is formed by removing at least a part of the silicon substrate in accordance with the uneven shape of the integrated circuit portion.

8. Further, the method includes a step of cutting the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, 8. A method for manufacturing a member with a heat spreader structure as described in claim 6 or 7, characterized in that in the process of forming the heat spreader structure, the diamond chips are arranged so that the uneven shape of the diamond layer or the silicon substrate fits into the uneven shape of the integrated circuit portion, and the heat spreader structure is bonded to the substrate member.

9. Furthermore, after the step of forming the heat spreader structure, a step of attaching a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member; The method for producing a member with a heat spreader structure according to claim 8 , further comprising the step of: removing the silicon substrate.

10. Further, a step of cutting the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips; A step of cutting the substrate member on which the integrated circuit portion is formed into small pieces to form chips with integrated circuits, A method for manufacturing a member with a heat spreader structure as described in claim 6 or 7, characterized in that in the process of forming the heat spreader structure, the chips with integrated circuits are arranged, and then the diamond chip is attached so that the uneven shape fits into the uneven shape of the integrated circuit part, thereby forming the heat spreader structure on the substrate member.

11. Furthermore, after the step of forming the heat spreader structure, a step of attaching a silicon substrate on which another diamond layer has been grown, with the silicon substrate facing up, so as to cover all of the diamond chips arranged on the substrate member; The method for producing a member with a heat spreader structure according to claim 10 , further comprising the step of: removing the silicon substrate.

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