Die bonding device, die bonding method, and method of manufacturing semiconductor device

Abstract

To provide a technique capable of confirming whether a transparent die is present on a dicing tape.SOLUTION: A die bonding device comprises: a dome having a suction hole for sucking a dicing tape having a transparent die stuck; a lighting device provided above the dome; an imaging device provided above the dome; and a controller. The controller is configured to: suck the dicing tape through the suction hole so as to form a recessed part of the dicing tape when the die is not present above the center part of the top surface of the dome; irradiate, by the lighting device, the dicing tape with illumination light emphasizing the lightness difference between the recessed part and the periphery of the recessed part; acquire an image by photographing the dicing tape by the imaging device; and then determine whether the die is present from the image.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a die bonding apparatus and is applicable to, for example, a die bonding apparatus that picks up a glass chip. [Background technology]

[0002] A die bonding device such as a die bonder is a device that uses a bonding material to bond (place and adhere) an element onto a substrate or element. The bonding material is, for example, a liquid or film-like resin or solder. The element is, for example, a semiconductor chip, a glass chip, a silicon chip, etc. The semiconductor chip is, for example, a logic chip, a memory chip, an image sensor chip, etc. The substrate is, for example, a wiring board, a lead frame formed of a thin metal plate, a glass substrate, etc. The semiconductor chip is provided to the die bonder by cutting the semiconductor chip with a wafer attachment tape (dicing tape) attached to the semiconductor wafer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-153874 A Summary of the Invention [Problem to be solved by the invention]

[0004] Like semiconductor chips, when glass chips (hereinafter also referred to as "dies") are cut from a glass wafer with a dicing tape attached thereto and provided to a die bonder, it may be necessary to check whether or not the die is present on the dicing tape.

[0005] The present disclosure provides a technique for checking the presence or absence of a transparent die on a dicing tape. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0006] A brief outline of a representative aspect of the present disclosure is as follows. That is, the die bonding apparatus includes a dome having suction holes for suctioning a dicing tape having a transparent die attached thereto, an illumination device provided above the dome, an imaging device provided above the dome, and a control device. The control device is configured to suction the dicing tape through the suction holes in order to form a recess in the dicing tape when the die is not present above the center of the upper surface of the dome, to irradiate the dicing tape with illumination light that emphasizes the brightness difference between the recess and the periphery of the recess using the illumination device, to photograph the dicing tape using the imaging device to obtain an image, and to determine the presence or absence of a die based on the image. Effect of the Invention

[0007] According to the present disclosure, it is possible to confirm the presence or absence of a transparent die on a dicing tape. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a top view showing an outline of a die bonder in an embodiment. [Diagram 2] FIG. 2 is a cross-sectional view showing a schematic of the die supply section shown in FIG. [Diagram 3] FIG. 3 is a side view showing an outline of the preform part shown in FIG. [Figure 4] FIG. 4 is a side view showing an outline of the die supply section and the bonding section shown in FIG. [Diagram 5] FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Figure 6] FIG. 6 is a top view showing the push-up unit shown in FIG. 2 and the glass chip attached to the dicing tape. [Figure 7] FIG. 7 is a schematic diagram showing the state of illumination light when there is a glass chip on a dicing tape. [Figure 8] FIG. 8 is a schematic diagram showing the state of illumination light when there is no glass chip on the dicing tape. [Figure 9] FIG. 9 is a diagram showing a wafer recognition camera, a lens, a dome, and a subject. [Figure 10] FIG. 10 is a diagram showing a state in which a suction operation is performed when a glass chip is present. [Figure 11] FIG. 11 is a diagram showing a state in which the suction operation is performed when there is no glass chip. [Figure 12] FIG. 12 is a schematic diagram showing an image taken when a glass chip is present. [Figure 13] FIG. 13 is a schematic diagram showing an image captured when there is no target glass chip. [Figure 14] FIG. 14 is a flow chart showing a part of the bonding process. [Figure 15] FIG. 15 is a diagram showing a wafer recognition camera, an illumination device, a dome, and a subject in the first modified example. [Figure 16] FIG. 16 is a schematic diagram showing an image taken in the presence of a glass chip. [Figure 17] FIG. 17 is a schematic diagram showing an image taken in the absence of a glass chip. [Figure 18] FIG. 18 is a diagram showing a wafer recognition camera, an illumination device, a dome and a subject in the second modified example. [Figure 19] FIG. 19 is a diagram showing a state in which the suction operation is performed when there is no glass chip. [Figure 20] FIG. 20 is a schematic diagram showing an image taken in the presence of a glass chip. [Figure 21] FIG. 21 is a schematic diagram showing an image captured in the absence of a target glass chip. [Figure 22] FIG. 22 is a diagram showing a wafer recognition camera, a lighting device, a dome and a subject in the third modified example. [Diagram 23]FIG. 23 is a diagram showing a wafer recognition camera, a lighting device, a dome and a subject in the fourth modified example. [Figure 24] FIG. 24 is a diagram showing a wafer recognition camera, an illumination device, a dome, and a subject in the fifth modified example. [Diagram 25] FIG. 25 is a diagram showing a schematic image captured when the target glass chip and one adjacent glass chip are not present. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that, in order to clarify the description, the width, thickness, shape, etc. of each part may be shown in a schematic manner compared to the actual embodiment. Furthermore, the dimensional relationship between each element, the ratio of each element, etc. do not necessarily match between multiple drawings.

[0010] The configuration of a die bonder, which is one embodiment of a semiconductor manufacturing device, will be described with reference to FIGS. 1 to 4 and 6. FIG.

[0011] As shown in Fig. 1, the die bonder 1 broadly includes a die supply section 10, a preform section 90, a bonding section 40, a transport section 50, a substrate supply section 60, a substrate unloading section 70, and a control section (control device) 80. The Y direction is the front-rear direction of the die bonder 1, and the X direction is the left-right direction. The die supply section 10 is disposed on the front side of the die bonder 1, and the bonding section 40 is disposed on the rear side. The die supply section 10 supplies a glass chip D to be mounted on a substrate S. Here, semiconductor chips HT are mounted on multiple product areas on the substrate S, which will eventually become one package.

[0012] As shown in FIG. 2 and FIG. 6, the die supply unit 10 includes a wafer holder 12 that holds a wafer W, a push-up unit 13 that pushes up a glass chip D from the wafer W, and a wafer recognition camera 24. Here, the wafer W is a disk-shaped glass plate to which a dicing tape DT is attached, and is diced and divided into a plurality of glass chips D. The wafer holder 12 includes an expand ring 15 that holds a wafer ring WR, and a support ring 17 that horizontally positions the dicing tape DT held by the wafer ring WR and to which a plurality of glass chips D are attached. As shown in FIG. 6, the push-up unit 13 includes a dome 131 having a plurality of suction holes 132 that suction the dicing tape DT and needles 133 that push up the dicing tape DT. The suction holes 132 are located not only under the glass chip D (target glass chip Dp) to be picked up, but also under the glass chip D (adjacent glass chip Da) adjacent to the target glass chip Dp. The push-up unit 13 is disposed inside the support ring 17. Control unit 80 moves wafer holder 12 in the X-axis and Y-axis directions by a wafer table (not shown), and moves target glass chip Dp to the position of push-up unit 13 (pick-up position).

[0013] When pushing up the target glass chip Dp, the wafer holder 12 lowers the expand ring 15 holding the wafer ring WR. As a result, the dicing tape DT held by the wafer ring WR is stretched, the gap between the target glass chip Dp and the adjacent glass chip Da increases, and the push-up unit 13 pushes up the target glass chip Dp from below, improving the pick-up ability of the target glass chip Dp.

[0014] 3, the preform unit 90 has a syringe 91, a drive unit (not shown) that moves the syringe 91 in the X-axis direction, the Y-axis direction, and the up-down direction, and a preform camera 94 that recognizes the application position of the syringe 91. The preform unit 90 applies paste in a frame shape using the syringe 91 to a semiconductor chip HT mounted on a substrate S that has been transported by the transport unit 50. The syringe 91 is filled with paste, and is configured so that the paste is pushed out by air pressure from the tip of a nozzle 92 to be applied to the semiconductor chip HT mounted on the substrate S.

[0015] As shown in FIG. 4, the bonding section 40 has a bond head 41, a Y drive section (not shown), and a substrate recognition camera 44. The bond head 41 has a collet 42 that holds the glass chip D by suction at its tip. The Y drive section moves the bond head 41 in the Y-axis direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) on the substrate S and recognizes the bond position. The bonding section 40 picks up the glass chip D from the die supply section 10 and bonds it onto the semiconductor chip HT on which the paste PA is applied in a frame shape and which is mounted on the substrate S that is being conveyed. At this time, the bond head 41 corrects the pick-up position and posture based on the image data of the wafer recognition camera 24, and picks up the glass chip D from the wafer W. Then, the bond head 41 bonds the glass chip D onto the semiconductor chip HT mounted on the substrate based on the image data of the substrate recognition camera 44.

[0016] 1, the transport section 50 has a transport lane 52 as a transport path along which the substrate S moves. With this configuration, the substrate S moves from the substrate supply section 60 along the transport lane 52 to a coating position, moves to a bonding position after coating, and after bonding, moves to the substrate unloading section 70 to deliver the substrate S to the substrate unloading section 70.

[0017] The control unit 80 includes a memory that stores a program (software) for monitoring and controlling the operation of each of the above-mentioned parts of the die bonder 1, and a central processing unit (CPU) that executes the program stored in the memory.

[0018] Next, a method for manufacturing a semiconductor device using the die bonder in the embodiment will be described with reference to Fig. 5. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

[0019] (Wafer loading process: process S1) A wafer ring WR is supplied to the die bonder 1. The supplied wafer ring WR is carried into a die supply unit 10. Here, a dicing tape DT to which glass chips D separated from a wafer W are attached is held on the wafer ring WR.

[0020] (Substrate loading process: Process S2) The substrate S on which the semiconductor chip HT is mounted is carried into the substrate supply unit 60 of the die bonder 1. After being carried in, the substrate S is carried to the preform stage 96 by the carrying unit 50.

[0021] (Preforming process: Process S3) The preform camera 94 obtains an image of the surface of the semiconductor chip HT mounted on the substrate S before application, and the surface to which the paste PA is to be applied is confirmed. If there is no problem with the surface to be applied, the position of the substrate S supported by the preform stage 96 where the paste is to be applied is confirmed and positioned. Positioning is performed by pattern matching, as in the bonding section 40.

[0022] A paste PA is applied from a nozzle 92 at the tip of a syringe 91 to a semiconductor chip HT mounted on a substrate S. The paste PA is, for example, a UV (ultraviolet) curing adhesive. After application, the applied paste PA is photographed by a preform camera 94. Whether the paste PA has been applied accurately is confirmed based on the image acquired by photographing, and an inspection (visual inspection) of the applied paste PA is performed. If there is no problem with the application, the transport unit 50 transports the substrate S to the bond stage 46.

[0023] (Bond process: Process S4) (Positioning of glass chip) After step S1, a wafer table pitch operation is performed in which the wafer holder 12 is moved so that the desired glass chip D can be picked up from the wafer W. The glass chip D is photographed by the wafer recognition camera 24, and the glass chip D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the glass chip D on the wafer holder 12 from the die position reference point of the die bonder 1, and positioning is performed. Note that the die position reference point is previously held at a predetermined position of the wafer holder 12 as the initial setting of the device. The image data is processed to perform a surface inspection of the glass chip D.

[0024] (Board positioning) After step S3, the substrate S placed on the bond stage 46 is photographed by the substrate recognition camera 44, and image data is acquired. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as an initial setting for the device.

[0025] (Pickup & Bond) The bond head 41 is translated and lowered to directly above the glass chip D to be picked up, the suction position of the bond head 41 is corrected from the calculated amount of deviation of the glass chip D, and the glass chip D is vacuum-sucked by the collet 42. The bond head 41 that has sucked the glass chip D from the wafer W bonds the glass chip D to a predetermined position of the semiconductor chip HT mounted on the substrate S on the bond stage 46. The glass chip D bonded to the semiconductor chip HT is photographed by the substrate recognition camera 44, and an inspection is performed based on image data acquired by photographing to determine whether the glass chip D has been bonded at the desired position, etc.

[0026] (Substrate unloading process: Process S5) The substrate S with the glass chip D bonded thereto is transported to the substrate unloading section 70. The substrate S with the glass chip D bonded thereto is removed from the substrate unloading section 70. The substrate S is unloaded from the die bonder 1.

[0027] In order to clarify this embodiment, the problem of checking the presence or absence of a glass chip D will be described with reference to Fig. 7 and Fig. 8. Fig. 7 is a schematic diagram showing the state of illumination light when there is a glass chip on the dicing tape. Fig. 8 is a schematic diagram showing the state of illumination light when there is no glass chip on the dicing tape.

[0028] As shown in Figure 7, the surface of the glass chip D, which is transparent in the visible light region, generates surface diffuse reflected light DRL due to slight diffuse reflection of incident light IL, and specular reflected light SRL due to a certain degree of specular reflection. Inside the glass chip D, transmitted light TRL due to transmission and internal scattered light SCL due to slight scattering are generated. The interface between the bottom surface of the glass chip D and the top surface of the dicing tape DT generates surface diffuse reflected light DRL' due to slight diffuse reflection of transmitted light TRL, and specular reflected light SRL' due to a certain degree of specular reflection. The specular reflected light SRL' passes through the glass chip D and is output to the outside of the glass chip D.

[0029] Furthermore, the dicing tape DT, which is transparent in the visible light range, has similar properties to the glass chip D, and the reflectance, transmittance, and diffusion rate of the dicing tape DT are close to those of the glass chip D. Therefore, inside the dicing tape DT, transmitted light TRL' due to transmission and internal scattered light SCL' due to slight scattering are generated. The bottom surface of the dicing tape DT generates surface diffuse reflected light DRL" due to slight diffuse reflection in response to the transmitted light TRL', and specular reflected light SRL" due to a certain degree of specular reflection. The specular reflected light SRL" passes through the dicing tape DT and the glass chip D and is output to the outside of the glass chip D. The camera captures the specular reflected light SRL, the specular reflected light SRL', and the specular reflected light SRL".

[0030] As shown in Figure 8, the surface of the dicing tape DT generates surface diffuse reflected light DRL due to slight diffuse reflection of the incident light IL, and specular reflected light SRL due to a certain degree of specular reflection. Inside the dicing tape DT, transmitted light TRL due to transmission and internal scattered light SCL due to slight scattering are generated. The bottom surface of the dicing tape DT generates surface diffuse reflected light DRL' due to slight diffuse reflection of the transmitted light TRL, and specular reflected light SRL' due to a certain degree of specular reflection. The specular reflected light SRL' passes through the glass chip D and is output to the outside of the glass chip D. The camera captures the specular reflected light SRL and the specular reflected light SRL'.

[0031] In this case, the only difference between a case where there is a glass chip on the dicing tape and a case where there is no glass chip on the dicing tape is whether or not specular reflected light SRL" is included, and because the amount of specular reflected light SRL" is very small, it is difficult to recognize the difference between the two. For this reason, it is difficult to confirm the presence or absence of one of the two layers that form a layered structure as parallel planes.

[0032] As a result, with coaxial lighting, the specular reflected light from the surface is the same for the glass chip D and the dicing tape DT, making them difficult to distinguish. Also, with oblique lighting, the light is transmitted in the same way, making the dome 131 of the push-up unit 13 below visible, making them difficult to distinguish. Furthermore, with dome lighting, coaxial lighting and oblique lighting are mixed, so there is almost no difference, and as a result, they are difficult to distinguish.

[0033] Although the reflectance, transmittance, and diffusion rate of a material can be changed to some extent by changing the wavelength, polarized light, or angle of incidence, in the case of a material that is originally transparent in the visible light range, it is difficult to produce a clear difference even if these factors in the visible light range are limited or selected.

[0034] The above-mentioned problems are solved in the die supply unit 10 in this embodiment. First, the optical system of the die supply unit 10 will be described with reference to Fig. 9. Fig. 9 is a diagram showing a wafer recognition camera, a lens, a dome, and a subject.

[0035] A dicing tape DT with a glass chip D attached thereto is placed on the dome 131, and a wafer recognition camera 24 is provided above the glass chip D. An illumination device 25 is disposed between the wafer recognition camera 24 and the glass chip D. The illumination device 25 includes a surface-emitting illumination (light source) 251 and a half mirror (semi-transparent mirror) 252. Illumination light from the surface-emitting illumination 251 is reflected by the half mirror 252 on the same optical axis as the wafer recognition camera 24, and is irradiated as vertically incident parallel light on the glass chip D. The illumination device 25 is a coaxial illumination within a lens barrel. The surface-emitting illumination 251 is a surface-emitting type LED (Light Emitting Diode) light source.

[0036] A method for checking the presence or absence of a glass chip D will be described with reference to Figs. 10 to 13 and 25. Fig. 10 is a diagram showing a state in which a suction operation is performed when a glass chip is present. Fig. 11 is a diagram showing a state in which a suction operation is performed when a glass chip is not present. Fig. 12 is a diagram showing a schematic image captured when a glass chip is present. Fig. 13 is a diagram showing a schematic image captured when a target glass chip is not present. Fig. 25 is a diagram showing a schematic image captured when a target glass chip and one adjacent glass chip are not present.

[0037] When the suction operation is performed with the glass chip D on the dome 131, as shown in Fig. 10, the upper surface of the dicing tape DT remains flat because it is held by the glass chip D. In contrast, when the suction operation is performed with no glass chip D on the dome 131, as shown in Fig. 11, the dicing tape DT is soft and a cone-shaped depression is formed at the position of the suction hole 132.

[0038] In this state, for example, when vertically incident parallel light PL is irradiated as coaxial lighting, the surface (top surface) of the glass chip D directly reflects the specular reflected light SRL straight up, as shown in Fig. 10. In contrast, on the slope of the portion recessed by the adsorption of the dicing tape DT, the specular reflected light SRL is not reflected straight up, as shown in Fig. 11, and when an image is taken with the wafer recognition camera 24 installed directly above, the difference from when there is a glass chip D becomes clear.

[0039] That is, for example, when the target glass chip Dp is not present, as shown in FIG. 13, the specular reflected light SRL of the recess does not reach the wafer recognition camera 24, so only the area of ​​the suction hole 132 becomes dark. However, the bottom of the recess appears bright because the specular reflected light SRL is directed toward the wafer recognition camera 24. In contrast, when the glass chip D is present, the area of ​​the suction hole 132 is difficult to distinguish from other areas, as shown in FIG. 12. In this state, the presence or absence of the glass chip D can be determined by measuring the brightness of the area (center area) where the target glass chip Dp should be by image processing. Note that the adjacent glass chip Da is located within the same field of view of the target glass chip Dp and the wafer recognition camera 24, so that, for example, as shown in FIG. 25, even if the adjacent glass chip Da adjacent to the target glass chip Dp on the left side of the drawing does not exist, the area of ​​the suction hole 132 becomes dark in the same way as when the target glass chip Dp is not present. Therefore, not only the target glass chip Dp but also the presence or absence of the adjacent glass chip Da can be determined. When it is determined that the glass chip D does not exist, picking up at the position where the glass chip D does not exist can be skipped.

[0040] Several examples of methods for image processing in the area where the glass chip to be picked up should be located in order to check for the presence or absence of the glass chip D will be described.

[0041] (Method 1) The area of ​​the suction hole 132 is set in advance, and the change in the average brightness within that area is confirmed. A threshold is set, and if there is a change of a certain amount or more, it is determined that the glass tip D is not present.

[0042] (Method 2) The difference between the maximum and minimum brightness values ​​is measured in the area where the glass chip D should be. If the difference exceeds a predetermined value, it is determined that the glass chip D is not present.

[0043] (Method 3) The patterns that appear in the suction hole 132 when the glass tip D is present and when it is not present are registered as a model, and the presence or absence of a change is confirmed using normalized correlation matching or the like.

[0044] (Method 4) A histogram is obtained using as an index the brightness of the region where the glass tip D should be. Since the needle 133 has a high brightness and the suction hole 132 has a low brightness, it is determined that the glass tip D is not present when there are two peaks in the frequency of appearance brightness.

[0045] The bonding step (step S4) will be described in detail with reference to Fig. 14. Fig. 14 is a flow chart showing a part of the bonding step.

[0046] (Wafer table pitch operation: step S41) A wafer table pitch operation is performed to move wafer holder 12 so that a desired glass chip D can be picked up from wafer W, and glass chip D is placed at the center of dome 131 of push-up unit 13 as shown in FIG.

[0047] (Dome adsorption: process S42) The dome 131 is moved upward to a position where it comes into contact with the dicing tape DT, and the dicing tape DT is adsorbed by the adsorption holes 132 provided in the dome 131 .

[0048] (Check for glass chip presence: Step S43) Using the wafer recognition camera 24 and the lighting device 25 provided above the dome 131, the dome 131 and its surroundings are photographed as shown in Fig. 6 to confirm the presence or absence of the glass chip D. A method for checking the presence or absence of the glass chip D will be described later. If the glass chip D is not present, the process returns to step S41. If the glass chip D is present, the process proceeds to step S44.

[0049] (Glass chip positioning: step S44) 6 and its periphery are photographed using the wafer recognition camera 24 and the lighting device 25, and the image of the dicing groove DG is used to position the glass chip D. Note that step S44 may be performed before step S43.

[0050] (Pickup: Process S45) In step S45, the glass chip D is picked up as described above, and the process returns to step S41.

[0051] In this manner, the presence or absence of the glass chip D is confirmed in the surface inspection of the glass chip D in step S4. The presence or absence of the glass chip D is confirmed in order to avoid the following problems.

[0052] If the glass chip D on the dicing tape DT is missing for some reason and the pickup is performed without noticing this, an error occurs because the landing sensor of the bond head 41 cannot detect the landing. The landing sensor cannot detect the landing because if the ground surface of the collet 42 comes into contact with the dicing tape DT, the surface of the collet 42 may be scratched or dirty, which may make it impossible to ensure the cleanliness of the product, so the landing sensor is not used. If an error occurs, the absence of the glass chip D is only noticed after the pickup process has started, which is inefficient and reduces the productivity of the device. In the worst case, the ground surface of the collet 42 may come into contact with the dicing tape DT. This may result in the cleanliness of the product not being guaranteed, as described above.

[0053] In the embodiment, the suction operation is performed so as to lose the parallelism of the surface layers of the glass chip D and the dicing tape DT. As a result, if a certain condition is satisfied with the lighting, etc., it is possible to make a difference in the direction of the reflective surface even with the same lighting, making it possible to confirm the presence or absence of the glass chip D. The certain condition in the embodiment is to irradiate vertically incident parallel light by a coaxial lighting.

[0054] According to the present embodiment, one or more of the following advantages are achieved.

[0055] (a) The presence or absence of a glass chip can be determined.

[0056] (b) By being able to check the presence or absence of glass chips before picking them up, pick-up errors can be reduced, thereby improving production efficiency.

[0057] (c) The possibility of the collet accidentally touching the dicing tape surface can be reduced, which helps to keep the contact surface of the collet clean and ensures the cleanliness of the product.

[0058] (d) When a glass chip is irradiated with a parallel light source as a coaxial epi-illumination, the outline of the glass chip can be clearly visualized.

[0059] (e) The presence or absence of a glass chip can be confirmed using the same lighting as for positioning, so a single captured image can be used for both presence inspection and positioning image processing, preventing a decrease in equipment tact time and improving productivity.

[0060] (f) The yield of products assembled by the die bonder can be improved.

[0061] <Modification> Below, some representative modified examples of the embodiment are exemplified. In the following description of the modified examples, the same reference numerals as those in the above-mentioned embodiment may be used for parts having the same configuration and function as those described in the above-mentioned embodiment. The description of such parts may be appropriately cited within the scope of technical inconsistency. Furthermore, a part of the above-mentioned example and all or a part of the multiple modified examples may be appropriately applied in a composite manner within the scope of technical inconsistency.

[0062] If certain conditions are met with lighting, etc., it is possible to determine whether or not there is a glass chip. However, the certain conditions are not met with (1) dome lighting, (2) coaxial lighting that emits diffused light of a surface emission type, and (3) oblique lighting.

[0063] The above (1) and (2) are good at evenly capturing uneven surfaces, so the shading of the uneven parts caused by adhesion is returned to an even level, reducing the differences. The above (3) is dominated by transmitted light, so the surface of the dome 131 is visible.

[0064] For this reason, it is necessary to not only perform adsorption but also to irradiate the material with illumination light appropriate for that purpose. Some examples are given below.

[0065] (First Modification) Fig. 15 is a diagram showing a wafer recognition camera, a lighting device, a dome, and a subject in the first modified example. Fig. 16 is a diagram showing an image captured in a state where a target glass chip is present. Fig. 17 is a diagram showing an image captured in a state where a target glass chip is not present.

[0066] In the embodiment, an example of a coaxial illumination device that emits vertically incident parallel light has been described as the illumination device, but a coaxial illumination device that emits point light may also be used.

[0067] The illumination device 25 in the first modified example is a coaxial illumination device having a point light source 253 with a small light-emitting surface and a half mirror 252. The light-emitting surface is a few mm or less in size. The point light source 253 exhibits properties similar to a parallel light source in a narrow area, so that, as shown in FIG. 17, when there is no target glass chip Dp, the surface unevenness of the dicing tape DT can be emphasized. Note that, as shown in FIG. 16, when there is a target glass chip Dp, the surface unevenness of the dicing tape DT is not emphasized.

[0068] (Second Modification) Fig. 18 is a diagram showing a wafer recognition camera, a lighting device, a dome, and a subject in a second modified example. Fig. 19 is a diagram showing a state in which a suction operation is performed when there is no glass chip. Fig. 20 is a diagram showing a schematic image taken when there is a glass chip. Fig. 21 is a diagram showing a schematic image taken when there is no target glass chip.

[0069] In the embodiment, an example of a coaxial illumination device with parallel light of vertical incidence has been described as an illumination device, but oblique illumination may also be used. The illumination device 25 in the second modification is an oblique light bar illumination provided near the wafer recognition camera 24.

[0070] Although it depends on the angle (θ) formed by the depression (concave) of the dicing tape DT, if the incident angle of the lighting device 25 is within the range in which the specular reflected light SRL reflected on the surface of the depression heads toward the wafer recognition camera 24 directly above, a part of the depression can be brightly photographed. Here, the incident angle is the angle with respect to the optical axis of the wafer recognition camera 24. In this case, in the other area A that is a flat surface, the specular reflected light SRL does not head toward the wafer recognition camera 24 directly above, so it is photographed darkly. The specular reflected light SRL from the inclined surface B enters the wafer recognition camera 24. The incident angle of light that satisfies the conditions is up to twice (2θ) θ indicated by the arc arrow shown in FIG. 19. As shown in FIG. 18, the lighting device 25 is installed within that range. In other words, the lighting device 25 is located at an angle within twice the predetermined angle (θ) with respect to the optical axis as viewed from the intersection of the optical axis of the wafer recognition camera 24 and the dicing tape DT. Here, the upper limit of 2θ is about 10 to 15 degrees.

[0071] As shown in Fig. 21, when there is no target glass chip Dp, the surface unevenness of the dicing tape DT can be emphasized. Note that, as shown in Fig. 20, when there is a glass chip D, the surface unevenness of the dicing tape DT is not emphasized.

[0072] (Third Modification) FIG. 22 is a diagram showing a wafer recognition camera, a lighting device, a dome and a subject in the third modified example.

[0073] In the embodiment, an example of a coaxial lighting device that emits parallel light in a vertically incident direction has been described as the lighting device, but a coaxial lighting device with an asymmetric irradiation area may also be used. The lighting device 25 in the third modified example has a surface-emitting lighting device (light source) 251, a half mirror 252, and a light shielding plate 254. The lighting device 25 is a coaxial lighting device that emits diffuse light of a surface-emitting type. Since the illumination light is reflected by the half mirror 252, the surface-emitting lighting device 251 and the light shielding plate 254 can be considered to be located at the positions indicated by the dotted lines.

[0074] As in the second modified example, the difference in the orientation of the inclined surface of the recess is utilized. The illumination area of ​​the surface emitting light 251, which is installed within a range of ±2θ with respect to the optical axis of the wafer recognition camera 24, is made asymmetric. For example, by providing a light shielding plate 254 or the like within the range of an incident angle of ±2θ, it is possible to make part of the inclined surface of the recess bright and part dark.

[0075] The surface-emitting light 251 may be configured with LEDs arranged in an array and the illumination area may be made asymmetric by turning on / off the LEDs, or the surface-emitting light 251 may be configured with a liquid crystal display device and the illumination area may be made asymmetric by turning on / off the LEDs. The light-shielding plate 254 and the unlit area of ​​the surface-emitting light do not necessarily need to be completely blocked from illumination light, and may be darker than an area without the light-shielding plate 254 or the lit area of ​​the surface-emitting light. For example, the light-shielding plate 254 may be configured with a translucent member or a plate with slits. The luminance of the unlit area of ​​the surface-emitting light may be lower than the luminance of the lit area of ​​the surface-emitting light.

[0076] (Fourth Modification) FIG. 23 is a diagram showing a wafer recognition camera, a lighting device, a dome and a subject in the fourth modified example.

[0077] Since the light shielding plate 254 in the third modified example is provided to eliminate the symmetry of the irradiation area, the light shielding plate may be provided below the half mirror as long as it does not affect the camera field of view. The light shielding plate 255 in the fourth modified example is provided below or below the illumination device 25 within a range of ±2θ with respect to the optical axis of the wafer recognition camera 24. The light shielding plate 255 may be formed of a translucent member or a plate having slits, similar to the light shielding plate 254.

[0078] (Fifth Modification) FIG. 24 is a diagram showing a wafer recognition camera, an illumination device, a dome, and a subject in the fifth modified example.

[0079] In the fourth modified example, the light shielding plate 255 is provided below or below the lighting device 25, but an obstacle may be provided below the lighting device. Therefore, instead of the light shielding plate, another drivable unit such as a bond head or a pickup head may temporarily play the role of the light shielding plate.

[0080] In particular, the pickup head is usually retracted to a position that does not affect the illumination, but by moving this retracted position closer to the optical axis and having the head wait at a position that eliminates the symmetry of the illumination irradiation area, it is possible to obtain an effect. This makes it possible to visualize by simply changing the operation sequence and retracted position without adding new hardware to the current die bonder configuration.

[0081] The disclosure made by the present inventors has been specifically described above based on the embodiments, but it goes without saying that the present disclosure is not limited to the above-described embodiments and can be modified in various ways.

[0082] For example, in the embodiment, an example has been described in which a cone-shaped depression is created in the dicing tape DT by the suction action of the suction holes 132 of the dome 131. In addition to suction, unevenness may be created in the dicing tape DT by weakening the force with which the dicing tape DT held by the wafer ring WR is stretched.

[0083] In addition, in the embodiment, the determination of the presence or absence of an adjacent glass chip Dp has been described, but in the modified example, the adjacent glass chip Da is located within the same field of view of the wafer recognition camera 24 as the target glass chip Dp, so that it is possible to determine the presence or absence of not only the target glass chip Dp but also the adjacent glass chip Da. [Explanation of symbols]

[0084] 1. Die bonder (die bonding device) 131 Dome 132...Adsorption hole 24 Wafer recognition camera (imaging device) 25. Lighting equipment 80... Control unit (control device) D Glass chip (die) DT···Dicing Tape

Claims

1. a dome having a suction hole for suctioning a dicing tape having a transparent die attached thereto; A lighting device provided above the dome; an imaging device provided above the dome; A control device; Equipped with The control device includes: adsorbing the dicing tape through the suction holes to form a recess in the dicing tape when the die is not located above the center of the upper surface of the dome; irradiating the dicing tape with illumination light by the illumination device such that a difference in brightness between the recess and a periphery of the recess is emphasized; The dicing tape is photographed by the imaging device to obtain an image; A die bonding apparatus configured to determine the presence or absence of a die based on the image.

2. 2. The die bonding apparatus according to claim 1, The illumination device is a coaxial illumination device that irradiates parallel light.

3. 2. The die bonding apparatus according to claim 1, The illumination device is a coaxial illumination device having a point light source and a semi-transparent mirror onto which the point light source is irradiated.

4. 2. The die bonding apparatus according to claim 1, the illumination device is an oblique illumination device positioned at an angle within twice a predetermined angle with respect to an intersection of an optical axis of the imaging device and the dicing tape, The predetermined angle is an angle formed between the upper surface and the recess.

5. 2. The die bonding apparatus according to claim 1, the illumination device is a coaxial illumination device having a surface-emitting illumination device and a semi-transmissive mirror onto which the surface-emitting illumination device is irradiated; When viewed from an intersection of an optical axis of the imaging device and the dicing tape, a part within twice a predetermined angle with respect to the optical axis of the imaging device is not irradiated with illumination light, The predetermined angle is an angle formed between the upper surface and the recess.

6. 6. The die bonding apparatus according to claim 5, The illumination device is a die bonding apparatus having a light shielding plate between the surface-emitting illumination device and the semi-transparent mirror for blocking a portion of the illumination light.

7. 6. The die bonding apparatus according to claim 5, The surface emitting lighting is a die bonding device configured with a plurality of LEDs or a liquid crystal display device arranged in an array.

8. 6. The die bonding apparatus according to claim 5, Further, a light shielding plate is provided on the lower part or under the lighting device, A die bonding apparatus in which a part of the illumination light from the illumination device is blocked by the light blocking plate.

9. 6. The die bonding apparatus according to claim 5, Further, the head is provided with A die bonding apparatus in which a part of the illumination light of the illumination device is blocked by the head.

10. a carrying-in process of carrying a wafer ring holding a dicing tape having a transparent die affixed thereto into a die bonding apparatus including: a dome having an upper surface and a suction hole provided on the upper surface; an illumination device provided above the dome; and an imaging device provided above the dome; a bonding step of picking up the die from the wafer ring and bonding it to a substrate; having The bonding step includes, before picking up the die, adsorbing the dicing tape through the suction holes to form a recess in the dicing tape when the die is not present above a central portion of the upper surface of the dome; a step of irradiating the dicing tape with illumination light by the illumination device such that a difference in brightness between the recess and a periphery of the recess is emphasized; a step of photographing the dicing tape with the imaging device to obtain an image; determining whether or not a die is present based on the image; The die bonding method includes the steps of:

11. a carrying-in process of carrying a wafer ring holding a dicing tape having a transparent die affixed thereto into a die bonding apparatus including: a dome having an upper surface and a suction hole provided on the upper surface; an illumination device provided above the dome; and an imaging device provided above the dome; a bonding step of picking up the die from the wafer ring and bonding it to a semiconductor chip bonded to a substrate; having The bonding step includes, before picking up the die, adsorbing the dicing tape through the suction holes to form a recess in the dicing tape when the die is not present above a central portion of the upper surface of the dome; a step of irradiating the dicing tape with illumination light by the illumination device such that a difference in brightness between the recess and a periphery of the recess is emphasized; a step of photographing the dicing tape with the imaging device to obtain an image; determining whether or not a die is present based on the image; A method for manufacturing a semiconductor device having the above structure.

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